Binding structure and binding method for COG binding process

Abstract

The invention relates to the technical field of display equipment production processes, in particular to a binding structure and a binding method for a COG binding process, the binding structure comprises an IC chip, an ACF glue layer and a panel which are sequentially distributed from top to bottom, the lower end face of the IC chip is uniformly provided with a plurality of salient points, the upper end face of the panel is uniformly provided with a plurality of ITO pins corresponding to the salient points, and the upper end face of the panel is provided with a plurality of ITO pins corresponding to the salient points. The upper end face of the ACF adhesive layer is provided with convex points, an expansion block connected with the lower end face of the IC chip is arranged between every two adjacent convex points, the convex points and the expansion blocks abut against the upper end face of the ACF adhesive layer, the ITO pins abut against the lower end face of the ACF adhesive layer, and the expansion blocks are used for being embedded into the ACF adhesive layer and heated to expand when the COG binding technology is executed. The COG process effect can be achieved without full pressure, so that the influence of pressing heat on the periphery can be effectively prevented, and implementation of narrow frame design is facilitated.

Description

Technical Field

[0001] The present invention relates to the technical field of display device production technology, and in particular to a binding structure and a binding method for a COG binding process. Background Art

[0002] The COG bonding process is used to bond IC chips. A pressure head is used to press the IC chip onto anisotropic conductive adhesive (ACF). Below the ACF is a panel. The pressing process is divided into false pressing (pre-pressing) and main pressing. The two actions have different purposes and use different pressing parameters. In general, the temperature of false pressing is lower than that of main pressing. At present, screen design is optimized and narrow frame design has gradually become the mainstream. This poses a great challenge to the bonding process. The bonding area is too close to other areas of the panel, which can easily cause the rest of the parts to be affected by the bonding process, such as POL edge warping and other problems. In order to ensure that there are enough particles to break to meet good circuit conduction, the COG process tends to be fully pressed, but this is in great conflict with the above-mentioned narrow frame design. Summary of the invention

[0003] In order to solve the above technical problems, the present invention provides a binding structure and a binding method for a COG binding process.

[0004] The invention provides the following technical solution: a binding structure for a COG binding process, comprising an IC chip, an ACF glue layer and a panel distributed in sequence from top to bottom, the lower end surface of the IC chip being evenly provided with a plurality of bumps, the upper end surface of the panel being evenly provided with a plurality of ITO pins corresponding to the bumps, an expansion block connected to the lower end surface of the IC chip being provided between two adjacent bumps, the bumps and the expansion block being in contact with the upper end surface of the ACF glue layer, the ITO pins being in contact with the lower end surface of the ACF glue layer, and the expansion block being used to be embedded in the ACF glue layer and expand under heat when performing the COG binding process.

[0005] In a binding structure for a COG binding process according to an embodiment of the present invention, the bumps correspond to the ITO pins. When the IC chip is pressed against the ACF glue layer, the bumps and the ITO pins are embedded in the ACF glue layer, and the particles in the ACF glue layer at positions corresponding to the bumps or the ITO pins are broken, thereby electrically connecting the IC chip to the panel. The bumps correspond precisely to the ITO pins, and the expansion blocks expand due to heat, so that the particles in the ACF glue can gather at the pressing position, thereby increasing the particle concentration at the pressing position in disguised form, which is particularly beneficial for accurately controlling the effective pressing area, so that a sufficient number of particle ruptures can still be guaranteed in the case of pressing in a small range, and the COG process effect can be achieved without full pressing, thereby effectively preventing the influence of pressing heat on the periphery, and facilitating the realization of a narrow frame design.

[0006] Furthermore, the expansion block includes an outer shell and an inner core arranged in the outer shell, and the side wall of the outer shell is provided with multiple openings connected to the inner core, and the thermal expansion coefficient of the outer shell is smaller than the thermal expansion coefficient of the inner core; the thermal curing temperature of the outer shell is lower than the temperature when the false pressing process is performed, and the thermal curing temperature of the inner core is higher than the temperature when the false pressing process is performed, and lower than the temperature when the real pressing process is performed.

[0007] Furthermore, the opening is located on a side wall of the housing facing the protrusion.

[0008] Furthermore, the cross-section of the lower end of the shell is arc-shaped.

[0009] Furthermore, the thickness of the expansion block is less than or equal to the thickness of the protrusion.

[0010] Furthermore, after the COG binding process is performed, the upper and lower heights of the expansion block are between 1 / 2 and 2 / 3 of the gap between the IC chip and the panel.

[0011] Furthermore, the sum of the thickness of the bump and the ITO pin is smaller than the thickness of the ACF glue layer.

[0012] Furthermore, the left-right width of the expansion block is between 1 / 3 and 1 / 2 of the gap between two adjacent protrusions.

[0013] The present invention further proposes a binding method for a COG binding process, which is applied to the binding structure for the COG binding process as described above, and the method comprises:

[0014] A panel is provided, wherein a plurality of ITO pins are evenly arranged on the upper end surface of the panel;

[0015] Arranging an ACF adhesive layer corresponding to the binding area of ​​the panel at the upper end of the panel, so that the ACF adhesive layer is attached to the panel, and removing the release paper on the upper end surface of the ACF adhesive layer;

[0016] The IC chip to be bound is moved to the top of the ACF glue layer according to the false pressure unit, and the IC chip is aligned with the binding area of ​​the panel, wherein a plurality of bumps are evenly arranged on the lower end surface of the IC chip, the bumps correspond to the ITO pins, and an expansion block connected to the lower end surface of the IC chip is arranged between two adjacent bumps; the expansion block comprises an outer shell and an inner core arranged in the outer shell, a plurality of openings communicating with the inner core are arranged on the side wall of the outer shell, and the thermal expansion coefficient of the outer shell is smaller than the thermal expansion coefficient of the inner core;

[0017] Driving the pressing head of the false pressing unit and pressing the IC chip onto the ACF glue layer according to a preset first parameter; wherein the temperature of the first parameter is greater than the thermal curing temperature of the outer shell and less than the thermal curing temperature of the inner core;

[0018] The false pressing unit is reset, and the pressing head of the main pressing unit is aligned with the IC chip, the pressing head of the main pressing unit is driven and the IC chip is pressed according to a preset second parameter, thereby completing the binding of the IC chip; wherein the temperature of the second parameter is greater than the thermal curing temperature of the inner core. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0020] Figure 1 It is a structural schematic diagram of a binding structure used in a COG binding process according to a first embodiment of the present invention;

[0021] Figure 2 An exploded schematic diagram of a binding structure used in a COG binding process according to a first embodiment of the present invention;

[0022] Figure 3 It is a schematic structural diagram of a binding structure for a COG binding process according to the first embodiment of the present invention after a COG binding process is performed;

[0023] Figure 4 It is a schematic diagram of the internal structure of the expansion block in the binding structure used in the COG binding process according to the first embodiment of the present invention;

[0024] Figure 5 It is a schematic side structural diagram of an expansion block in a binding structure used in a COG binding process according to a first embodiment of the present invention;

[0025] Figure 6 FIG. 4 is a flow chart of a bonding method for a COG bonding process according to a second embodiment of the present invention.

[0026] Description of reference numerals:

[0027] 10. IC chip; 11. Bump; 12. Expansion block; 121. Shell; 122. Inner core; 123. Opening; 20. ACF glue layer; 30. Panel; 31. ITO pin. DETAILED DESCRIPTION

[0028] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the embodiments of the present invention, and should not be construed as limiting the present invention.

[0029] In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0030] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0031] In the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present invention can be understood according to specific circumstances.

[0032] Embodiment 1

[0033] Reference Figures 1 to 5 In a first embodiment of the present invention, a binding structure for a COG binding process includes an IC chip 10, an ACF adhesive layer 20 and a panel 30 which are sequentially distributed from top to bottom. A plurality of bumps 11 are evenly arranged on the lower end surface of the IC chip 10, a plurality of ITO pins 31 corresponding to the bumps 11 are evenly arranged on the upper end surface of the panel 30, and an expansion block 12 connected to the lower end surface of the IC chip 10 is arranged between two adjacent bumps 11. The bumps 11 and the expansion block 12 abut against the upper end surface of the ACF adhesive layer 20, and the ITO pins 31 abut against the lower end surface of the ACF adhesive layer 20. The expansion block 12 is used to be embedded in the ACF adhesive layer 20 and expand under heat when the COG binding process is performed.

[0034] In a binding structure for a COG binding process according to an embodiment of the present invention, the bump 11 corresponds to the ITO pin 31. When the IC chip 10 is pressed against the ACF glue layer 20, the bump 11 and the ITO pin 31 will be embedded in the ACF glue layer 20, and the particles in the ACF glue layer 20 at the position corresponding to the bump 11 or the ITO pin 31 will be broken, so that the IC chip 10 is electrically connected to the panel 30. The bump 11 corresponds precisely to the ITO pin 31, and the expansion block 12 expands due to heat, so that the particles in the ACF glue can gather at the pressing position, which increases the particle concentration at the pressing position in disguised form, and is particularly beneficial for accurately controlling the effective pressing area, so that a sufficient number of particle ruptures can still be guaranteed in the case of pressing in a small range, and the COG process effect can be achieved without full pressing, thereby effectively preventing the influence of pressing heat on the periphery, which is beneficial for the realization of a narrow frame design.

[0035] Furthermore, the expansion block 12 includes an outer shell 121 and an inner core 122 arranged in the outer shell 121. The side wall of the outer shell 121 is provided with a plurality of openings 123 connected to the inner core 122. The thermal expansion coefficient of the outer shell 121 is smaller than the thermal expansion coefficient of the inner core 122. The thermal curing temperature of the outer shell 121 is lower than the temperature when the false pressing process is performed, and the thermal curing temperature of the inner core 122 is higher than the temperature when the false pressing process is performed, and lower than the temperature when the real pressing process is performed. Since the pressing process of the COG binding process is performed by false pressing first and then by real pressing, and the temperature of the false pressing process is lower than the temperature of the real pressing process, the expansion block 12 can achieve two expansions, which can The particles in the ACF adhesive layer 20 are effectively squeezed toward the pressing position. When the false pressing process is performed, the outer shell 121 is first heated to expand and solidify, and the inner core 122 also expands at the same time, but is not solidified. By setting the opening 123, when the main pressing process is performed, the inner core 122 can expand and squeeze the ACF adhesive layer 20 along the opening 123. The inner core 122 is thermally expanded again and solidified, which effectively increases the particle concentration at the pressing position of the ACF adhesive layer 20, so that the binding effect between the IC chip 10 and the panel 30 is good. In this embodiment, the outer shell 121 and the inner core 122 can be resin materials with different thermal expansion coefficients and thermal curing temperatures.

[0036] Furthermore, the opening 123 is located on the side wall of the shell 121 facing the bump 11; the cross-section of the lower end of the shell 121 is arc-shaped; the position of the opening 123 allows the inner core 122 to be squeezed only toward the bump 11 when expanding, further increasing the particle concentration at the corresponding position of the bump 11 and the ITO pin 31, and achieving the expected COG process effect without full pressure, which is conducive to the design of a narrow frame; at the same time, the structure of the lower end of the shell 121 also ensures that it has sufficient mechanical strength, and the inner core 122 will not squeeze the lower end of the shell 121 when expanding, thereby preventing the inner core 122 from extending downward to cause the particles in the ACF glue layer 20 between the expansion block 12 and the upper end surface of the panel 30 to rupture, causing a short circuit.

[0037] Furthermore, the thickness of the expansion block 12 is less than or equal to the thickness of the bump 11; if the thickness of the expansion block 12 is too small, it may cause the extrusion effect of the expansion block 12 toward the corresponding position of the bump 11 and the ITO pin 31 to be unsatisfactory; if the thickness of the expansion block 12 is greater than the thickness of the bump 11, it is easy to cause the expansion block 12 to be excessively extruded downward after being heated and expanded, and the particles of the ACF glue layer 20 at the lower end of the expansion block 12 will rupture, causing a short circuit; in this embodiment, the thickness of the expansion block 12 is equal to the thickness of the bump 11.

[0038] Furthermore, the upper and lower heights of the expansion block 12 after the COG bonding process are between 1 / 2 and 2 / 3 of the gap between the IC chip 10 and the panel 30; the sum of the thicknesses of the bump 11 and the ITO pin 31 is less than the thickness of the ACF adhesive layer 20; the left and right widths of the expansion block 12 are between 1 / 3 and 1 / 2 of the gap between two adjacent bumps 11; the expansion block 12 will expand and deform after the COG bonding process, and its upper and lower heights (i.e., thickness) after deformation are moderate, which can prevent the particles of the ACF adhesive layer 20 at its lower end from being damaged. The sum of the thickness of the bump 11 and the ITO pin 31 is less than the thickness of the ACF glue layer 20, which can prevent the bump 11 or the ITO pin 31 from puncturing the ACF glue layer 20. The width of the expansion block 12 is moderate to prevent the particles in the ACF glue layer 20 on both sides of the expansion block 12 from breaking. In this embodiment, the thickness of the expansion block 12 after the COG bonding process is 2 / 3 of the gap between the IC chip 10 and the panel 30; the left and right widths of the expansion block 12 are 1 / 2 of the gap between two adjacent bumps 11.

[0039] Embodiment 2

[0040] Reference Figure 6 The present invention also proposes a binding method for a COG binding process, the method comprising:

[0041] S1: Provide a panel 30 , wherein a plurality of ITO pins 31 are evenly arranged on the upper end surface of the panel 30 ; and there are gaps between the ITO pins 31 .

[0042] S2: An ACF adhesive layer 20 corresponding to the binding area of ​​the panel 30 is set at the upper end of the panel 30, so that the ACF adhesive layer 20 is bonded to the panel 30, and the release paper on the upper end surface of the ACF adhesive layer 20 is removed; specifically, a pasting unit is first configured, the pasting unit cuts an ACF adhesive layer 20 of a set length from the rolled ACF adhesive, and pastes it on the binding area of ​​the panel 30, uses visual sensing to position, and uses a robotic arm to move the ACF adhesive layer 20. After being bonded to the binding area, the release paper on the back of the ACF adhesive layer 20 is torn off.

[0043] S3: According to the false pressure unit, the IC chip 10 to be bound is moved to the top of the ACF glue layer 20, and the IC chip 10 is aligned with the binding area of ​​the panel 30, wherein a plurality of bumps 11 are evenly arranged on the lower end surface of the IC chip 10, the bumps 11 correspond to the ITO pins 31, and an expansion block 12 connected to the lower end surface of the IC chip 10 is arranged between two adjacent bumps 11; the expansion block 12 includes an outer shell 121 and an inner core 122 arranged in the outer shell 121, and a plurality of openings 123 connected to the inner core 122 are arranged on the side wall of the outer shell 121, and the thermal expansion coefficient of the outer shell 121 is smaller than the thermal expansion coefficient of the inner core 122.

[0044] Furthermore, the opening 123 is located on the side wall of the shell 121 facing the bump 11; the cross-section of the lower end of the shell 121 is arc-shaped; the position of the opening 123 allows the inner core 122 to be squeezed only toward the bump 11 when expanding, further increasing the particle concentration at the corresponding position of the bump 11 and the ITO pin 31, and achieving the expected COG process effect without full pressure, which is conducive to the design of a narrow frame; at the same time, the structure of the lower end of the shell 121 also ensures that it has sufficient mechanical strength, and the inner core 122 will not squeeze the lower end of the shell 121 when expanding, thereby preventing the inner core 122 from extending downward to cause the particles in the ACF glue layer 20 between the expansion block 12 and the upper end surface of the panel 30 to rupture, causing a short circuit.

[0045] Furthermore, the thickness of the expansion block 12 is less than or equal to the thickness of the bump 11; if the thickness of the expansion block 12 is too small, it may cause the extrusion effect of the expansion block 12 toward the corresponding position of the bump 11 and the ITO pin 31 to be unsatisfactory; if the thickness of the expansion block 12 is greater than the thickness of the bump 11, it is easy to cause the expansion block 12 to be excessively extruded downward after being heated and expanded, and the particles of the ACF glue layer 20 at the lower end of the expansion block 12 will rupture, causing a short circuit; in this embodiment, the thickness of the expansion block 12 is equal to the thickness of the bump 11.

[0046] Furthermore, the upper and lower heights of the expansion block 12 after the COG bonding process are between 1 / 2 and 2 / 3 of the gap between the IC chip 10 and the panel 30; the sum of the thicknesses of the bump 11 and the ITO pin 31 is less than the thickness of the ACF adhesive layer 20; the left and right widths of the expansion block 12 are between 1 / 3 and 1 / 2 of the gap between two adjacent bumps 11; the expansion block 12 will expand and deform after the COG bonding process, and its upper and lower heights (i.e., thickness) after deformation are moderate, which can prevent the particles of the ACF adhesive layer 20 at its lower end from being damaged. The sum of the thickness of the bump 11 and the ITO pin 31 is less than the thickness of the ACF glue layer 20, which can prevent the bump 11 or the ITO pin 31 from puncturing the ACF glue layer 20. The width of the expansion block 12 is moderate to prevent the particles in the ACF glue layer 20 on both sides of the expansion block 12 from breaking. In this embodiment, the thickness of the expansion block 12 after the COG bonding process is 2 / 3 of the gap between the IC chip 10 and the panel 30; the left and right widths of the expansion block 12 are 1 / 2 of the gap between two adjacent bumps 11.

[0047] S4: drive the pressing head of the dummy pressing unit and press the IC chip 10 onto the ACF glue layer 20 according to a preset first parameter; wherein the temperature of the first parameter is greater than the thermal curing temperature of the outer shell 121 and less than the thermal curing temperature of the inner core 122; specifically, by configuring the dummy pressing unit, the dummy pressing unit obtains the IC chip 10 from the loading position, uses a robotic arm to move the IC chip 10 to the binding area, uses a visual alignment method to align the IC chip 10, drives the pressing head of the dummy pressing unit and uses the first parameter to press the IC chip 10 onto the ACF glue layer 20.

[0048] S5: Reset the fake pressing unit, and align the pressing head of the main pressing unit with the IC chip 10, drive the pressing head of the main pressing unit and press the IC chip 10 according to the preset second parameter, so as to complete the binding of the IC chip 10; wherein, the temperature of the second parameter is greater than the thermal curing temperature of the inner core 122; specifically, by configuring the main pressing unit, the main pressing unit adopts a visual alignment method to align the IC chip 10, drive the pressing head of the main pressing unit and press the IC chip 10 again using the second parameter, so as to complete the binding of the IC chip 10; in this embodiment, the temperature of the first parameter and the temperature of the second parameter are determined according to the materials used for the outer shell 121 and the inner core 122.

[0049] In the binding method for the COG binding process of this embodiment, the bump 11 corresponds to the ITO pin 31. When the IC chip 10 is pressed against the ACF glue layer 20, the bump 11 and the ITO pin 31 will be embedded in the ACF glue layer 20, and the particles in the ACF glue layer 20 corresponding to the bump 11 or the ITO pin 31 will be broken, so that the IC chip 10 is electrically connected to the panel 30. The bump 11 and the ITO pin 31 correspond precisely, and the expansion block 12 expands due to heat, so that the particles in the ACF glue can gather at the pressing position, which increases the particle concentration at the pressing position in disguise, and is particularly beneficial for accurately controlling the effective pressing area, so that in the case of a small range of pressing, a sufficient number of particle ruptures can still be guaranteed, and the COG process effect can be achieved without full pressing, thereby effectively preventing the influence of pressing heat on the surrounding area, which is beneficial to the realization of a narrow frame design.

[0050] Moreover, since the pressing process of the COG binding process first performs false pressing and then performs real pressing, and the temperature of the false pressing process (the process of driving the false pressing unit to press the IC chip 10) is lower than the temperature of the real pressing process (the process of driving the real pressing unit to press the IC chip 10), the expansion block 12 can achieve two expansions, which can effectively squeeze the particles in the ACF glue layer 20 toward the pressing position. When performing the false pressing process, the outer shell 121 is first heated and expanded and solidified, and the inner core 122 also expands at the same time, but is not solidified. By setting the opening 123, when performing the real pressing process, the inner core 122 can expand and squeeze the ACF glue layer 20 along the opening 123, and the inner core 122 is thermally expanded again and solidified, which effectively increases the particle concentration at the pressing position of the ACF glue layer 20, so that the binding effect of the IC chip 10 and the panel 30 is good; in this embodiment, the outer shell 121 and the inner core 122 can be resin materials with different thermal expansion coefficients and thermal curing temperatures.

[0051] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A binding structure for a COG binding process, characterized in that: The invention comprises an IC chip, an ACF glue layer and a panel which are distributed in sequence from top to bottom, wherein a plurality of bumps are evenly arranged on the lower end surface of the IC chip, a plurality of ITO pins corresponding to the bumps are evenly arranged on the upper end surface of the panel, an expansion block connected to the lower end surface of the IC chip is arranged between two adjacent bumps, the bumps and the expansion block are in contact with the upper end surface of the ACF glue layer, the ITO pins are in contact with the lower end surface of the ACF glue layer, and the expansion block is used to be embedded in the ACF glue layer and expand under heat when performing a COG binding process.

2. The binding structure for COG binding process according to claim 1, characterized in that: The expansion block comprises an outer shell and an inner core arranged in the outer shell, a plurality of openings communicating with the inner core are arranged on the side wall of the outer shell, and the thermal expansion coefficient of the outer shell is smaller than the thermal expansion coefficient of the inner core; The heat curing temperature of the outer shell is lower than the temperature when the false pressing process is performed, and the heat curing temperature of the inner core is higher than the temperature when the false pressing process is performed and lower than the temperature when the real pressing process is performed.

3. The binding structure for COG binding process according to claim 2, characterized in that: The opening is located on a side wall of the housing facing the protrusion.

4. The binding structure for COG binding process according to claim 2, characterized in that: The cross section of the lower end of the shell is in an arc shape.

5. The binding structure for COG binding process according to claim 1, characterized in that: The thickness of the expansion block is less than or equal to the thickness of the convex point.

6. The binding structure for COG binding process according to claim 1, characterized in that: The upper and lower heights of the expansion block after the COG binding process are performed are between 1 / 2 and 2 / 3 of the gap between the IC chip and the panel.

7. The binding structure for COG binding process according to claim 1, characterized in that: The sum of the thickness of the bump and the ITO pin is less than the thickness of the ACF glue layer.

8. The binding structure for COG binding process according to claim 1, characterized in that: The left and right widths of the expansion blocks are between 1 / 3 and 1 / 2 of the gaps between two adjacent protrusions.

9. A binding method for a COG binding process, applied to a binding structure for a COG binding process as claimed in any one of claims 1 to 8, characterized in that: The method comprises: A panel is provided, wherein a plurality of ITO pins are evenly arranged on the upper end surface of the panel; Arranging an ACF adhesive layer corresponding to the binding area of ​​the panel at the upper end of the panel, so that the ACF adhesive layer is attached to the panel, and removing the release paper on the upper end surface of the ACF adhesive layer; The IC chip to be bound is moved to the top of the ACF glue layer according to the false pressure unit, and the IC chip is aligned with the binding area of ​​the panel, wherein a plurality of bumps are evenly arranged on the lower end surface of the IC chip, the bumps correspond to the ITO pins, and an expansion block connected to the lower end surface of the IC chip is arranged between two adjacent bumps; the expansion block comprises an outer shell and an inner core arranged in the outer shell, a plurality of openings communicating with the inner core are arranged on the side wall of the outer shell, and the thermal expansion coefficient of the outer shell is smaller than the thermal expansion coefficient of the inner core; Driving the pressing head of the false pressing unit and pressing the IC chip onto the ACF glue layer according to a preset first parameter; wherein the temperature of the first parameter is greater than the thermal curing temperature of the outer shell and less than the thermal curing temperature of the inner core; The false pressing unit is reset, and the pressing head of the main pressing unit is aligned with the IC chip, the pressing head of the main pressing unit is driven and the IC chip is pressed according to a preset second parameter, thereby completing the binding of the IC chip; wherein the temperature of the second parameter is greater than the thermal curing temperature of the inner core.

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