A metasurface array structure

Abstract

The present application provides a metasurface array structure, which relates to the field of communication technology. The metasurface array structure includes a first metal layer, a second metal layer, a third metal layer, a first support layer and a second support layer, wherein the first support layer is located on one side of the first metal layer; the second metal layer is located on the side of the first support layer away from the first metal layer, and the second metal layer includes a plurality of array units arranged in an array; the array unit includes a ground patch, a first reflection patch, a second reflection patch, a first electrical control element and a second electrical control element; the third metal layer is located between the first metal layer and the second metal layer or on the side of the second metal layer away from the first metal layer; the third metal layer includes a plurality of coupling units arranged in an array; the second support layer is located between the second metal layer and the third metal layer, so that the reflection phase can be linearly, accurately and widely changed in a wide frequency band, and electromagnetic waves of different polarization states can be controlled.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to a metasurface array structure. Background Art

[0002] The metasurface array is composed of artificially designed periodic units, and dynamically adjustable electronic components are added to the periodic units to independently control parameters such as the delay of the incident electromagnetic wave, change the strong and weak superposition state of the electromagnetic wave in different spatial directions, and ultimately achieve active optimization and control of the electromagnetic environment.

[0003] Traditional metasurface arrays usually place one or more resonant reflective patches on the same layer, which results in a narrow phase modulation frequency band. Therefore, varactor diodes with large capacitance ratios are used to achieve broadband phase modulation. However, different frequency points require different phase modulation voltage states, so this method cannot truly achieve broadband operation. In addition, broadband phase modulation can be achieved by increasing the number of switching diodes. However, this will result in the phase modulation accuracy being limited by the number of switching diodes, resulting in lower phase modulation accuracy. Summary of the invention

[0004] In order to at least overcome the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a metasurface array structure.

[0005] In a first aspect, an embodiment of the present application provides a metasurface array structure, the metasurface array structure comprising:

[0006] A first metal layer;

[0007] a first supporting layer located on one side of the first metal layer;

[0008] A second metal layer located on a side of the first support layer away from the first metal layer, the second metal layer comprising a plurality of array units arranged in an array, the array unit comprising a ground patch, a first reflective patch, a second reflective patch, a first electric control element and a second electric control element; an extension direction of the first reflective patch is perpendicular to an extension direction of the second reflective patch, the second electric control element is connected between the second reflective patch and the ground patch in a first direction, the first electric control element is connected between the first reflective patch and the ground patch in a second direction, and the first direction is perpendicular to the second direction;

[0009] a third metal layer located between the first metal layer and the second metal layer or on a side of the second metal layer away from the first metal layer; the third metal layer comprises a plurality of coupling units arranged in an array, and an orthographic projection of the coupling unit on the first metal layer at least partially overlaps with an orthographic projection of the array unit on the first metal layer;

[0010] A second supporting layer is located between the second metal layer and the third metal layer.

[0011] In a possible implementation manner, the coupling unit is a metal layer that is provided in one piece.

[0012] In a possible implementation, the coupling unit includes a coupling gap structure;

[0013] The coupling slot structure includes a first slot extending along the first direction and a second slot extending along the second direction, and the first slot overlaps with the second slot.

[0014] In a possible implementation manner, the third metal layer is located on a side of the second metal layer away from the first metal layer;

[0015] The first supporting layer is a dielectric substrate, and the second supporting layer is a supporting column; the first supporting layer is used to fix the first metal layer and the second metal layer, and the second supporting layer is used to fix the second metal layer and the third metal layer.

[0016] In one possible implementation, the metasurface array structure includes a first through hole penetrating the first metal layer, the first support layer and the second metal layer, the third metal layer includes a second through hole, and the support column realizes a fixed connection between the second metal layer and the third metal layer through the first through hole and the second through hole.

[0017] In a possible implementation manner, the third metal layer is located between the first metal layer and the second metal layer;

[0018] The first supporting layer and the second supporting layer are dielectric substrates. The first supporting layer is used to fix the first metal layer and the third metal layer, and the second supporting layer is used to fix the second metal layer and the third metal layer.

[0019] In a possible implementation manner, the array unit further includes a first bias line extending along the second direction and a second bias line extending along the second direction;

[0020] The first bias line is connected to the first reflective patch, and the second bias line is connected to the second reflective patch.

[0021] In a possible implementation, the metasurface array structure also includes a voltage adjustment device connected to the plurality of bias lines, and the voltage adjustment device is used to adjust the voltage loaded on each of the first bias lines and the second bias line to adjust the reflection phase of each of the array units.

[0022] In a possible implementation, the first electric control element and the second electric control element are varactor diodes, and positive electrodes of the first electric control element and the second electric control element are connected to the ground patch.

[0023] In a possible implementation manner, the first supporting layer includes at least one third through hole, and the ground patch is connected to the first metal layer through the third through hole.

[0024] Based on any of the above aspects, the metasurface array structure provided in the embodiment of the present application can generate a resonance point (i.e., a high-frequency resonance point and a low-frequency resonance point) outside the working frequency band through the arrangement of the second metal layer and the third metal layer, thereby reducing the reflection loss between the two resonance points within the band and achieving linear, high-precision, and wide-range variation of the reflection phase within a wider frequency band. In addition, the metasurface array structure can also regulate electromagnetic waves of different polarization states. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 One of the structural schematic diagrams of the metasurface array structure provided in this embodiment;

[0027] Figure 2 A schematic diagram of the structure of the array unit provided in this embodiment;

[0028] Figure 3 The second structural schematic diagram of the metasurface array structure provided in this embodiment;

[0029] Figure 4 One of the structural schematic diagrams of the third metal layer provided in this embodiment;

[0030] Figure 5 The second structural schematic diagram of the third metal layer provided in this embodiment;

[0031] Figure 6a The third structural schematic diagram of the metasurface array structure provided in this embodiment;

[0032] Figure 6b The fourth structural schematic diagram of the metasurface array structure provided in this embodiment;

[0033] Figure 7 A schematic diagram of the change in reflection phase of the metasurface array structure provided in this embodiment;

[0034] Figure 8 Schematic diagram of the change in reflection loss of the metasurface array structure provided in this embodiment.

[0035] Icon: 100-first metal layer; 200-second metal layer; 300-third metal layer; 400-first supporting layer; 500-second supporting layer; 210-array unit; 211-ground patch; 212-first reflection patch; 213-second reflection patch; 214-first electric control element; 215-second electric control element; 216-first bias line; 217-second bias line; 310-coupling unit; 311-coupling gap structure; 312-first gap; 313-second gap. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0037] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0038] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0039] In the description of this application, it should be noted that the terms "upper", "lower", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the application is usually placed when in use, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0040] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components are required to be absolutely horizontal or overhanging, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0041] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0042] It should be noted that, in the absence of conflict, different features in the embodiments of the present application may be combined with each other.

[0043] The specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings.

[0044] Please refer to Figure 1 , Figure 1 The schematic diagram of the structure of the metasurface array structure provided by the present embodiment is shown as follows: The metasurface array structure may include a first metal layer 100 , a second metal layer 200 , a third metal layer 300 , a first support layer 400 and a second support layer 500 .

[0045] The first supporting layer 400 is located on one side of the first metal layer 100 .

[0046] The second metal layer 200 is located on the side of the first support layer 400 away from the first metal layer 100, and the second metal layer 200 may include a plurality of array units 210 arranged in an array. Figure 2 , the array unit 210 may include a ground patch 211, a first reflective patch 212, a second reflective patch 213, a first electrical control element 214, and a second electrical control element 215. The extension direction of the first reflective patch 212 is perpendicular to the extension direction of the second reflective patch 213, the first electrical control element 214 is connected between the first reflective patch 212 and the ground patch 211 in the second direction D2, the second electrical control element 215 is connected between the second reflective patch 213 and the ground patch 211 in the first direction D1, and the first direction D1 is perpendicular to the second direction D2.

[0047] In this embodiment, when the first reflection patch 212 extends along the first direction D1, the second reflection patch 213 extends along the second direction D2. When the first reflection patch 212 extends along the second direction D2, the second reflection patch 213 extends along the first direction D1.

[0048] Specifically, the shapes of the first reflective patch 212 and the second reflective patch 213 can be rectangular, the orthographic projection of the first reflective patch 212 on the first metal layer 100 and the orthographic projection of the second reflective patch 213 on the first metal layer 100 do not overlap, and the shape of the ground patch 211 can be a square, and two adjacent sides of the square extend along the first direction D1 and the second direction D2 respectively.

[0049] Exemplarily, the metasurface array structure may be composed of 36 array units 210 arranged in a 6×6 rectangular grid array, the size of one array unit 210 may be 45×45 mm, the operating frequency band of the metasurface array structure may be 3.2~3.8 GHz, and the relative bandwidth may be 17%.

[0050] In the above structure, by adjusting the component parameters of the first electrically controlled element 214 by voltage, the reflection phase of the incident electromagnetic wave polarized along the second direction D2 can be adjusted; by adjusting the component parameters of the second electrically controlled element 215 by voltage, the reflection phase of the incident electromagnetic wave polarized along the first direction D1 can be adjusted.

[0051] The third metal layer 300 is located between the first metal layer 100 and the second metal layer 200 or on the side of the second metal layer 200 away from the first metal layer 100. Figure 3 The third metal layer 300 may include a plurality of coupling units 310 arranged in an array, and the orthographic projection of the coupling unit 310 on the first metal layer 100 at least partially overlaps with the orthographic projection of the array unit 210 on the first metal layer 100 .

[0052] Specifically, one array unit 210 may correspond to one coupling unit 310 , and the size of the coupling unit 310 may be 25×25 mm.

[0053] The second supporting layer 500 is located between the second metal layer 200 and the third metal layer 300 .

[0054] Based on the above design, in the metasurface array structure provided in this embodiment, through the arrangement of the second metal layer 200 and the third metal layer 300, the electromagnetic wave can generate a resonance point (i.e., a high-frequency resonance point and a low-frequency resonance point) outside the working frequency band, reduce the reflection loss between the two resonance points within the band, and realize the linear, high-precision, and wide-range variation of the reflection phase within a wide frequency band. In addition, the metasurface array structure can also regulate electromagnetic waves of different polarization states.

[0055] In one possible implementation, see Figure 4 The coupling unit 310 may be a metal layer that is integrally formed and has no gaps.

[0056] Specifically, the shape of the metal layer can be a square, and the side length of the square can be 0.25-0.4λ, where λ represents the maximum operating wavelength. In this way, when the coupling unit 310 is a metal layer set in one piece, the electromagnetic wave modulation scanning range of the metasurface array structure is larger.

[0057] In one possible implementation, see Figure 5 , the coupling unit 310 may include a coupling gap structure 311.

[0058] The coupling slot structure 311 may include a first slot 312 extending along the first direction D1 and a second slot 313 extending along the second direction D2 , wherein the first slot 312 overlaps with the second slot 313 .

[0059] Specifically, the lengths of the first slot 312 and the second slot 313 may be greater than 0.5λ, where λ represents the maximum operating wavelength. Thus, when the coupling unit 310 is the coupling slot structure 311, the electromagnetic wave modulation scanning range of the metasurface array structure is relatively small.

[0060] It should be noted that the shapes of the first slit 312 and the second slit 313 may include but are not limited to: Figure 5 The rectangle shown may also be other shapes, which are not specifically limited here.

[0061] In a possible implementation, the third metal layer 300 may be located on a side of the second metal layer 200 away from the first metal layer 100 .

[0062] Please refer to Figure 6a and Figure 6bThe first supporting layer 400 is a dielectric substrate, and the second supporting layer 500 is a supporting column; the first supporting layer 400 can be used to fix the first metal layer 100 and the second metal layer 200, and the second supporting layer 500 can be used to fix the second metal layer 200 and the third metal layer 300.

[0063] In this embodiment, when the third metal layer 300 is located on the side of the second metal layer 200 away from the first metal layer 100, the first metal layer 100 and the second metal layer 200 can both be metal patterns etched on the dielectric substrate, and the third metal layer 300 can be a metal aluminum sheet. In this way, the metasurface array structure can be suitable for relatively low frequency bands such as sub6G, and can change the number of layers of the dielectric substrate from multiple layers to a single layer, effectively reducing production costs.

[0064] In one possible implementation, the metasurface array structure may include a first through hole penetrating the first metal layer 100, the first support layer 400 and the second metal layer 200, the third metal layer 300 includes a second through hole, and the support column realizes a fixed connection between the second metal layer 200 and the third metal layer 300 through the first through hole and the second through hole.

[0065] In this embodiment, the support column can be a plastic stud, and threads are respectively provided at both ends of the support column. The first through hole and the second through hole are light holes. By installing a nut at the support column and the first through hole and installing a nut at the support column and the second through hole, the second metal layer 200 and the third metal layer 300 can be fixedly connected.

[0066] Exemplarily, the second supporting layer 500 may be composed of four supporting columns, and the number of the first through holes and the second through holes may also be four.

[0067] In one possible implementation, please refer again to Figure 1 , the third metal layer 300 may be located between the first metal layer 100 and the second metal layer 200 .

[0068] The first supporting layer 400 and the second supporting layer 500 are dielectric substrates. The first supporting layer 400 is used to fix the first metal layer 100 and the third metal layer 300 , and the second supporting layer 500 is used to fix the second metal layer 200 and the third metal layer 300 .

[0069] In this embodiment, when the third metal layer 300 is located between the first metal layer 100 and the second metal layer 200, the first metal layer 100, the second metal layer 200 and the third metal layer 300 can all be metal patterns etched on the dielectric substrate. In this way, the metasurface array structure can be suitable for millimeter wave frequency bands and can more accurately control the height accuracy between different metal layers, thereby further ensuring performance indicators such as reflection phase.

[0070] In one possible implementation, please refer again to Figure 2 The array unit 210 further includes a first bias line 216 extending along the second direction D2 and a second bias line 217 extending along the second direction D2.

[0071] The first bias line 216 is connected to the first reflective patch 212 , and the second bias line 217 is connected to the second reflective patch 213 .

[0072] In this embodiment, the first bias line 216, the second bias line 217, the first reflection patch 212, the second reflection patch 213 and the ground patch 211 are arranged in the same layer, one end of the first bias line 216 is electrically connected to the first reflection patch 212, the other end of the first bias line 216 extends to a side of the array unit 210 parallel to the second direction D2 and is distributed along the second direction D2, one end of the second bias line 217 is electrically connected to the second reflection patch 213, the other end of the second bias line 217 extends to another side of the array unit 210 parallel to the second direction D2 and is distributed along the second direction D2.

[0073] For details, please refer again to Figure 3 The first bias lines 216 and the second bias lines 217 in the plurality of array units 210 may form a plurality of hubs. For example, the bias lines in the plurality of array units 210 may be connected to n hubs, where n is an integer and n≥1.

[0074] In one possible implementation, the metasurface array structure also includes a voltage adjustment device connected to the plurality of bias lines, and the voltage adjustment device is used to adjust the voltage loaded on each of the first bias lines 216 and the second bias line 217 to adjust the reflection phase of each of the array units 210.

[0075] In this embodiment, the voltage adjustment device is connected to a plurality of hub ends formed by the first bias line 216 and the second bias line 217. The voltage adjustment device can adjust the component parameters (e.g., capacitance) of the first electrical control element 214 and the second electrical control element 215 in each of the array units 210 by loading different DC voltages on each pin on the hub end, thereby adjusting the reflection phase of each of the array units 210.

[0076] In a possible implementation, the first electrical control element 214 and the second electrical control element 215 may be varactor diodes, and the positive electrodes of the first electrical control element 214 and the second electrical control element 215 are connected to the ground patch 211 .

[0077] Specifically, the capacitance variation range of the first electrical control element 214 and the second electrical control element 215 may be 0.02-1.1 pF, and the corresponding power-on voltage may be 0-20 V.

[0078] In a possible implementation, the first supporting layer 400 may include at least one third through hole, and the ground patch 211 is connected to the first metal layer 100 through the third through hole.

[0079] Specifically, the first metal layer 100 is a grounding layer, the third through hole can be a metal through hole, the number of the third through hole can be one, and the one third through hole can be located at the center of the orthographic projection of the grounding patch 211 on the first supporting layer 400. The number of the third through holes can be two, and the two third through holes can be located respectively on a straight line where the first electrical control element 214 extends along the second direction D2 and a straight line where the second electrical control element 215 extends along the first direction D1.

[0080] It should be noted that the number of the third through holes is not limited to one or two and is not specifically limited here.

[0081] In a possible implementation, when the third metal layer 300 is located on a side of the second metal layer 200 away from the first metal layer 100 , the third through hole may only penetrate the first supporting layer 400 to connect the ground patch 211 and the first metal layer 100 .

[0082] In another possible embodiment, when the third metal layer 300 is located between the first metal layer 100 and the second metal layer 200, the third through hole can penetrate the first supporting layer 400, the third metal layer 300 and the second supporting layer 500 to connect the ground patch 211 and the first metal layer 100.

[0083] Please refer to Figure 7 , Figure 7 Example The schematic diagram of the change in the reflection phase of the metasurface array structure due to the change in the capacitance of the varactor diode provided in the present application shows that when the capacitance of the first electrically controlled element 214 and the second electrically controlled element 215 gradually changes from 0.02 pF to 1.1 pF, the phase of the incident electromagnetic wave after reflection changes by more than 240° in the 3.2~3.8 GHz frequency band.

[0084] Please refer to Figure 8 , Figure 8 Example The present application provides a schematic diagram of the effect of capacitance change of a varactor diode on the reflection loss of a metasurface array structure. When the capacitance of the first electrically control element 214 and the second electrically control element 215 gradually changes from 0.02 pF to 1.1 pF, the unit electromagnetic wave reflection loss can be within 12 dB.

[0085] In summary, this embodiment provides a metasurface array structure. Through the arrangement of the second metal layer and the third metal layer, the electromagnetic wave can generate a resonance point (i.e., a high-frequency resonance point and a low-frequency resonance point) outside the working frequency band, reduce the reflection loss between the two resonance points within the band, and realize the linear, high-precision, and wide-range variation of the reflection phase within a wide frequency band. In addition, the metasurface array structure can also regulate electromagnetic waves of different polarization states.

[0086] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0087] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A metasurface array structure, characterized in that: include: A first metal layer; a first supporting layer located on one side of the first metal layer; A second metal layer located on a side of the first supporting layer away from the first metal layer, the second metal layer comprising a plurality of array units arranged in an array, the array unit comprising a ground patch, a first reflective patch, a second reflective patch, a first electrical control element, and a second electrical control element; The extension direction of the first reflective patch is perpendicular to the extension direction of the second reflective patch, the second electrical control element is connected between the second reflective patch and the ground patch in a first direction, the first electrical control element is connected between the first reflective patch and the ground patch in a second direction, and the first direction is perpendicular to the second direction; The array unit further includes a first bias line extending along the second direction and a second bias line extending along the second direction; the first bias line is connected to the first reflection patch, and the second bias line is connected to the second reflection patch; The metasurface array structure further includes a voltage adjustment device connected to the plurality of bias lines, the voltage adjustment device being used to adjust the voltage loaded on each of the first bias lines and the second bias line to adjust the reflection phase of each of the array units; a third metal layer located between the first metal layer and the second metal layer or on a side of the second metal layer away from the first metal layer; the third metal layer comprises a plurality of coupling units arranged in an array, and an orthographic projection of the coupling unit on the first metal layer at least partially overlaps with an orthographic projection of the array unit on the first metal layer; A second supporting layer is located between the second metal layer and the third metal layer.

2. The metasurface array structure according to claim 1, characterized in that: The coupling unit is a metal layer arranged in one piece.

3. The metasurface array structure according to claim 1, characterized in that: The coupling unit comprises a coupling gap structure; The coupling slot structure includes a first slot extending along the first direction and a second slot extending along the second direction, and the first slot overlaps the second slot.

4. The metasurface array structure according to claim 1, characterized in that: The third metal layer is located on a side of the second metal layer away from the first metal layer; The first supporting layer is a dielectric substrate, and the second supporting layer is a supporting column; the first supporting layer is used to fix the first metal layer and the second metal layer, and the second supporting layer is used to fix the second metal layer and the third metal layer.

5. The metasurface array structure according to claim 4, characterized in that: The metasurface array structure includes a first through hole that penetrates the first metal layer, the first support layer and the second metal layer, the third metal layer includes a second through hole, and the support column realizes a fixed connection between the second metal layer and the third metal layer through the first through hole and the second through hole.

6. The metasurface array structure according to claim 1, characterized in that: The third metal layer is located between the first metal layer and the second metal layer; The first supporting layer and the second supporting layer are dielectric substrates. The first supporting layer is used to fix the first metal layer and the third metal layer, and the second supporting layer is used to fix the second metal layer and the third metal layer.

7. The metasurface array structure according to claim 1, characterized in that: The first electric control element and the second electric control element are varactor diodes, and the positive electrodes of the first electric control element and the second electric control element are connected to the ground patch.

8. The metasurface array structure according to claim 1, characterized in that: The first supporting layer includes at least one third through hole, and the ground patch is connected to the first metal layer through the third through hole.

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