Display substrate, preparation method and display device

Abstract

The embodiment of the invention provides a display substrate, a preparation method and a display device. The display substrate comprises a display area and a blocking area, the blocking region comprises an inorganic layer and a second source drain electrode layer; the second source and drain electrode layer comprises a first metal layer, a second metal layer and a third metal layer; the second metal layer is arranged between the first metal layer and the third metal layer; a groove structure is arranged on one side, far away from the substrate, of the inorganic layer; the side, away from the second metal layer, of the first metal layer is attached to the bottom of the groove structure, the second metal layer is completely embedded into the groove structure, and the second metal layer is packaged in the groove structure through the third metal layer; wherein the material of the second metal layer can be etched by an anode etching solution, and the third metal layer cannot be etched by the anode etching solution.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a display substrate, a preparation method and a display device. Background Art

[0002] In the backplane preparation and evaporation packaging of the OLED screen, in order to prevent water vapor from entering the AA area (display area) along the organic layer from the IC (integrated circuit) side and causing the EL (organic electroluminescent, Electroluminescent) material to fail, the organic layer is usually etched off on the outside of the AA area on the IC side and a Dam (isolation structure) is set.

[0003] However, the organic layer in the AA region on the IC side is etched away, which causes the second source and drain layer (SD2) to be exposed above the inorganic layer. The second source and drain layer is a three-layer structure, and the second source and drain layer is exposed, resulting in the middle layer metal of the second source and drain layer being etched away by the anode liquid during the anode etching (Anode Mask) process during the production process, so that a wiring cavity (undercut) is formed between the top metal and the bottom metal at the boundary position of the second source and drain layer, and the top metal at the cavity position is prone to warping. Summary of the invention

[0004] The purpose of the embodiments of the present invention is to provide a display substrate, a manufacturing method and a display device to solve at least one of the above problems. The specific technical solution is as follows:

[0005] An embodiment of the present application provides a display substrate, which includes: a display area and a blocking area; the blocking area includes: an inorganic layer and a second source and drain layer; the second source and drain layer includes a first metal layer, a second metal layer and a third metal layer; the second metal layer is arranged between the first metal layer and the third metal layer; a groove structure is arranged on the side of the inorganic layer away from the substrate; the side of the first metal layer away from the second metal layer is attached to the bottom of the groove structure, the second metal layer is completely embedded in the groove structure, and the third metal layer encapsulates the second metal layer in the groove structure; wherein the material of the second metal layer can be etched by an anodic etching solution, and the third metal layer cannot be etched by an anodic etching solution.

[0006] In some embodiments of the present application, the third metal layer is located in the groove structure of the inorganic layer, the side of the third metal layer away from the second metal layer is not higher than the surface of the inorganic layer away from the substrate, and the side of the third metal layer away from the second metal layer is exposed outside the inorganic layer; or, the portion of the third metal layer close to the second metal layer is located in the groove structure, and the portion of the third metal layer away from the second metal layer exceeds the surface of the inorganic layer away from the substrate; or, the third metal layer is located outside the groove structure of the inorganic layer, and the orthographic projection of the groove structure on the substrate is located within the orthographic projection of the third metal layer on the substrate.

[0007] In some embodiments of the present application, the material of the first metal layer and the third metal layer is titanium; the material of the second metal layer is aluminum.

[0008] In some embodiments of the present application, the structure of the second source and drain layer at the interface with the inorganic layer is a zigzag structure.

[0009] In some embodiments of the present application, the meandering structure is a finger-shaped structure.

[0010] In some embodiments of the present application, the blocking area also includes: an isolation structure, which is arranged on the side of the inorganic layer away from the substrate; the isolation structure includes: a first isolation column, a second isolation column and a third isolation column; the first isolation column is located on the side of the blocking area close to the display area, and is spaced apart from the display area; the second isolation column is located on the side of the first isolation column away from the display area, and is spaced apart from the first isolation column; the third isolation column is located on the side of the second isolation column away from the display area, and is spaced apart from the second isolation column; a first encapsulation layer, the first encapsulation layer covers the surface of the isolation structure, the inorganic layer and the second source and drain layer away from the substrate; a second encapsulation layer, the second encapsulation layer covers the first encapsulation layer.

[0011] The embodiment of the present application also provides a method for preparing a display substrate, and the specific steps include: obtaining a pre-processed display substrate, wherein the pre-processed display substrate includes an inorganic layer; etching a groove structure on the side of the inorganic layer in the blocking area of ​​the pre-processed display substrate away from the substrate through a first hole etching process, and forming a preset electrode cross-hole on the side of the inorganic layer in the display area of ​​the pre-processed display substrate away from the substrate; wherein the groove structure has a first depth, a first electrode cross-hole is formed at a preset electrode cross-hole position in the display area, and a first source-drain layer, a first flat layer, a second electrode cross-hole and a second source-drain layer are prepared in the display area; A second source-drain electrode layer is prepared in the groove structure of the blocking area, wherein the second source-drain electrode layer includes: a first metal layer, a second metal layer and a third metal layer; the second metal layer is arranged between the first metal layer and the third metal layer; the third metal layer cannot be etched by the anode etching solution; wherein, for the second source-drain electrode layer inside the groove structure, one side of its first metal layer is attached to the bottom of the groove structure, the sum of the thickness of its first metal layer and its second metal layer is not greater than the first depth, and its third metal layer encapsulates its second metal layer in the groove structure; and the subsequent preparation process of the display substrate is completed.

[0012] In some embodiments of the present application, the third metal layer is located in the groove structure of the inorganic layer, the side of the third metal layer away from the second metal layer is not higher than the surface of the inorganic layer away from the substrate, and the side of the third metal layer away from the second metal layer is exposed outside the inorganic layer; or, the portion of the third metal layer close to the second metal layer is located in the groove structure, and the portion of the third metal layer away from the second metal layer exceeds the surface of the inorganic layer away from the substrate; or, the third metal layer is located outside the groove structure of the inorganic layer, and the orthographic projection of the groove structure on the substrate is located within the orthographic projection of the third metal layer on the substrate.

[0013] In some embodiments of the present application, the subsequent preparation process includes: preparing a second flat layer in the display area of ​​the display substrate; forming a pixel definition layer on a side of the second flat layer in the display area away from the substrate; forming an isolation structure on a side of the inorganic layer in the blocking area away from the substrate; forming an anode layer by anode etching on a side of the pixel definition layer away from the substrate; forming an electroluminescent layer, a cathode layer, a first encapsulation layer, an inkjet-printed layer, and a second encapsulation layer in sequence on a side of the anode layer away from the substrate; the inkjet-printed layer is arranged in the display area, the first encapsulation layer and the second encapsulation layer cover the display area and the blocking area, and the second encapsulation layer in the blocking area is adhered to the first encapsulation layer.

[0014] The present application also provides a display device, comprising the display substrate according to any one of the above embodiments.

[0015] Beneficial effects of the embodiments of the present invention:

[0016] A display substrate, a preparation method and a display device provided by an embodiment of the present invention, wherein a groove structure is provided in an inorganic layer of a barrier region of the display substrate, and a second source and drain electrode layer is formed in the groove structure, and a second metal layer of the second source and drain electrode layer is provided between a first metal layer and a third metal layer. Among them, a side of the first metal layer away from the second metal layer is attached to the bottom of the groove structure, the second metal layer is completely embedded in the groove structure, and the third metal layer encapsulates the second metal layer in the groove structure. Ensure that the sidewall of the groove structure is completely attached to the sidewall of the second metal layer, and the upper surface and the lower surface of the second metal layer are encapsulated by the bottom of the groove structure and the third metal layer. When performing the anodic etching step, since the second metal layer is located inside the groove structure of the inorganic layer and is completely encapsulated, it is difficult for the anodic etching solution to contact the second metal layer in the second source and drain electrode layer, thereby effectively improving the problem of the second metal layer in the second source and drain electrode layer being etched away to form a wiring cavity, and further reducing the warping of the third metal layer at the wiring cavity position.

[0017] Of course, it is not necessary to achieve all of the advantages described above at the same time to implement any product or method of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention, and for ordinary technicians in this field, other embodiments can also be obtained based on these drawings.

[0019] Figure 1 It is a schematic diagram of the structure of generating a wiring cavity after the second metal layer in the second source and drain electrode layer of the barrier region in the prior art is anodic etched;

[0020] Figure 2 for Figure 1 A schematic diagram of a structure in which the second source and drain electrode layer is covered by the first packaging layer and the second packaging layer, resulting in crack defects in the first packaging layer and the second packaging layer at the location of the routing cavity;

[0021] Figure 3 for Figure 1 A schematic diagram of a structure in which a third metal layer at a routing cavity position of a second source / drain layer is warped, resulting in packaging abnormalities of the first packaging layer and the second packaging layer;

[0022] Figure 4aA schematic diagram of the structure of the second source and drain layer of the barrier region provided in an embodiment of the present application when a side of the third metal layer away from the second metal layer is flush with a side of the inorganic layer away from the substrate;

[0023] Figure 4b A schematic structural diagram of a second source / drain layer in a barrier region provided by an embodiment of the present application, wherein a side of the third metal layer away from the second metal layer is lower than a side of the inorganic layer away from the substrate;

[0024] Figure 4c A schematic diagram of a structure in which a side of the third metal layer of the second source / drain layer of the barrier region provided in an embodiment of the present application that is away from the second metal layer is higher than a side of the inorganic layer that is away from the substrate, and a side of the third metal layer that is close to the second metal layer is lower than a side of the inorganic layer that is away from the substrate;

[0025] Figure 4d A schematic diagram of the structure of the second source and drain layer of the barrier region provided in an embodiment of the present application when a side of the third metal layer close to the second metal layer is flush with a side of the inorganic layer away from the substrate;

[0026] Figure 5 for Figure 4c A schematic diagram of a structure in which the second source and drain electrode layer is covered by the first encapsulation layer and the second encapsulation layer, and no encapsulation abnormality occurs in the first encapsulation layer and the second encapsulation layer;

[0027] Figure 6 A schematic diagram of the overall structure of a display substrate provided in an embodiment of the present application;

[0028] Figure 7 A top view of a display substrate provided in an embodiment of the present application;

[0029] Figure 8 for Figure 7 A partial enlarged view of the middle M region;

[0030] Fig. 9 A flow chart of the preparation of a display substrate provided in an embodiment of the present application;

[0031] Fig.10a A diagram of a first preparation process of a display substrate provided in an embodiment of the present application;

[0032] Fig.10b A diagram of a second preparation process of a display substrate provided in an embodiment of the present application;

[0033] Fig.10c A third preparation process diagram of a display substrate provided in an embodiment of the present application;

[0034] Fig.10d A fourth preparation process diagram of a display substrate provided in an embodiment of the present application;

[0035] Fig.10eA fifth preparation process diagram of a display substrate provided in an embodiment of the present application;

[0036] Fig.10f This is a diagram of the sixth preparation process of the display substrate provided in an embodiment of the present application.

[0037] Reference numerals:

[0038] Display area A, blocking area B;

[0039] Inorganic layer 1, groove structure 11, first insulating layer 12, first buffer layer 13, second insulating layer 14, third insulating layer 15, fourth insulating layer 16, fifth insulating layer 17, first electrode cross hole 18;

[0040] A first source and drain electrode layer 21, a second source and drain electrode layer 22, a first metal layer 221, a second metal layer 222, a third metal layer 223, and a wiring cavity 224;

[0041] A first semiconductor layer 31, a second semiconductor layer 32, a first gate metal 41, a second gate metal 42, and a third gate metal 43;

[0042] Isolation structure 5, first isolation column 51, second isolation column 52, third isolation column 53;

[0043] First planar layer 61, second electrode cross hole 611, second planar layer 62, pixel definition layer 71, anode layer 72, inkjet printing layer 73;

[0044] First encapsulation layer 81 , second encapsulation layer 82 , crack defect 821 . DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field based on this application belong to the scope of protection of the present invention.

[0046] In the related art, in order to prevent water vapor from entering the AA region along the organic layer from the IC side and causing the EL material to fail, the organic layer is usually etched away outside the AA region on the IC side and Dam is set. When the organic layer in the AA region on the IC side is etched away, the second source and drain layer 22 located above the inorganic layer 1 is exposed. Figures 1 to 3 As shown, Figure 1 It is a schematic diagram of the structure in the prior art where the second source-drain electrode layer 22 of the blocking region is located above the inorganic layer 1 and the organic layer is etched away. Figure 1 The metal layer in the middle of the second source and drain electrode layer 22 is etched by the anodic etching solution to form a wiring cavity 224. Figure 2for Figure 1 A schematic diagram of a structure in which the second source and drain layer is covered by the first packaging layer and the second packaging layer, and crack defects are generated in the first packaging layer and the second packaging layer due to the presence of the wiring cavity 224, Figure 3 This is a structural schematic diagram of the case where the third metal layer at the wiring cavity position of the second source and drain layer in the prior art is warped, resulting in packaging abnormalities of the first packaging layer and the second packaging layer.

[0047] refer to Figure 1 and Figure 2 Since the second source-drain electrode layer 22 is entirely located above the inorganic layer 1, during the anodic etching process, the second metal layer 222 (usually Al) in the second source-drain electrode layer 22 is etched by the anodic etching solution, resulting in the formation of a routing cavity 224 between the first metal layer 221 and the third metal layer 223. The presence of the routing cavity 224 causes a crack defect 821 (Crack) to be generated in the first packaging layer 81 and the second packaging layer 82 at the location of the routing cavity 224.

[0048] At the same time, reference Figure 3 Since the second metal layer 222 of the second source and drain layer 22 is etched, the third metal layer 223 at the location of the routing cavity 224 is prone to warping. In the process of forming the first packaging layer 81 and the second packaging layer 82 by CVD (chemical vapor deposition), the third metal layer 223 at the location of the routing cavity 224 is warped, which will cause the first packaging layer 81 and the second packaging layer 82 at this location to be lifted up, causing packaging abnormalities, thereby making the film formation at this location weaker than that in other areas. The location of the packaging abnormality in the display substrate produces stress changes in a high temperature and high humidity environment, thereby becoming a breakthrough point for water vapor intrusion, and ultimately causing the problem of the growth dark spot phenomenon (GDS, Growing Dark Spot) of the display substrate.

[0049] In order to solve the above technical problems, the embodiment of the present application provides a display substrate in which the second source and drain electrode layer 22 is arranged inside the inorganic layer 1, such as Figure 4a , Figure 5 and Figure 6 As shown, Figure 4a A schematic diagram of a structure in which a side of the third metal layer of the second source / drain layer of the barrier region provided in an embodiment of the present application away from the second metal layer is flush with a side of the inorganic layer away from the substrate, Figure 5 for Figure 4c A schematic diagram of a structure in which the second source and drain layer is covered by the first encapsulation layer and the second encapsulation layer, and no encapsulation abnormality occurs in the first encapsulation layer and the second encapsulation layer. Figure 6The overall structural diagram of the display substrate provided in the embodiment of the present application. The display substrate includes: a display area A and a barrier area B; the barrier area includes: an inorganic layer 1 and a second source-drain electrode layer 22; the second source-drain electrode layer 22 includes a first metal layer 221, a second metal layer 222 and a third metal layer 223; the second metal layer 222 is arranged between the first metal layer 221 and the third metal layer 223; a groove structure 11 is arranged on the side of the inorganic layer 1 away from the substrate; the side of the first metal layer 221 away from the second metal layer 222 is attached to the bottom of the groove structure 11, the second metal layer 222 is completely embedded in the groove structure 11, and the third metal layer 223 encapsulates the second metal layer 222 in the groove structure 11; wherein the material of the second metal layer 222 can be etched by the anodic etching solution, and the third metal layer 223 cannot be etched by the anodic etching solution.

[0050] In this embodiment, a groove structure 11 is provided in the inorganic layer 1 of the barrier region B of the display substrate, and the second source-drain electrode layer 22 is formed in the groove structure 11, and the second metal layer 222 of the second source-drain electrode layer 22 is provided between the first metal layer 221 and the third metal layer 223. Among them, the side of the first metal layer 221 away from the second metal layer 222 is attached to the bottom of the groove structure 11, the second metal layer 222 is completely embedded in the groove structure 11, and the third metal layer 223 encapsulates the second metal layer 222 in the groove structure. Ensure that the side wall of the groove structure 11 is completely attached to the side wall of the second metal layer 222, and the upper surface and the lower surface of the second metal layer 222 are encapsulated by the bottom of the groove structure 11 and the third metal layer 223, so that the second metal layer 222 is not in contact with the external environment. During the anodic etching step, since the second metal layer 222 is located inside the groove structure 11 of the inorganic layer 1 and is completely encapsulated, the problem that the second metal layer 222 in the second source and drain layer 22 is easily etched away by the anodic etching solution to form a wiring cavity 224 is effectively improved, and the warping of the third metal layer 223 at the location of the wiring cavity 224 is further reduced. It can be understood by those skilled in the art that the metal layer in the implementation of the present application cannot be etched by the anodic etching solution means that: in the anodic etching environment, the metal layer does not chemically react with the anodic etching solution, or the rate of chemical reaction with the anodic etching solution is very small, so that the metal layer is hardly etched by the anodic etching solution.

[0051] In some embodiments of the present application, Figure 5 and Figure 6As shown, the blocking area B also includes: an isolation structure 5, which is arranged on the side of the inorganic layer 1 away from the substrate; the isolation structure 5 includes: a first isolation column 51, a second isolation column 52 and a third isolation column 53; the first isolation column 51 is located on the side of the blocking area B close to the display area A, and is spaced apart from the display area A; the second isolation column 52 is located on the side of the first isolation column 51 away from the display area A, and is spaced apart from the first isolation column 51; the third isolation column 53 is located on the side of the second isolation column 52 away from the display area A, and is spaced apart from the second isolation column 52; a first encapsulation layer 81, the first encapsulation layer 81 covers the surface of the isolation structure 5, the inorganic layer 1 and the second source and drain layer 22 away from the substrate; a second encapsulation layer 82, the second encapsulation layer 82 covers the first encapsulation layer 81.

[0052] In this embodiment, an isolation structure 5 is provided on the side of the inorganic layer 1 away from the substrate, and the isolation structure 5 includes: a first isolation column 51, a second isolation column 52 and a third isolation column 53. Due to the existence of the isolation structure 5, the water vapor intrusion flowing from the blocking area B toward the display area A can be effectively blocked. At the same time, the side of the first isolation column 51 close to the display area A, the second encapsulation layer 82, the inorganic layer 1 and the side of the display area A close to the blocking area B form a cavity structure, which is used to accommodate the inkjet printing layer 73 overflowing (overflow) from the display area A to the blocking area B. The inkjet printing layer 73 flowing from the display area A to the blocking area B is blocked by the isolation structure 5, thereby reducing the problem of the inkjet printing layer 73 overflowing. The first encapsulation layer 81 covers the surface of the isolation structure 5, the inorganic layer 1 and the second source and drain layer 22 away from the substrate, and the second encapsulation layer 82 covers the first encapsulation layer 81 to form protection. In practical applications, the shape and number of the isolation structure 5 can be adjusted according to actual needs, as long as the water vapor intrusion and the inkjet printing layer can be blocked.

[0053] In this embodiment, since the second source-drain electrode layer 22 is disposed in the groove structure 11 of the inorganic layer 1 and is completely encapsulated and not in contact with the outside world, the problem of the second source-drain electrode 22 forming the wiring cavity 224 and the warping of the third metal layer 223 is avoided. Therefore, after the first encapsulation layer 81 and the second encapsulation layer 82 are formed, the first encapsulation layer 81 covering the surface of the second source-drain electrode layer 22 away from the substrate and the second encapsulation layer 82 covering the first encapsulation layer 81 will not be lifted up due to the warping of the wiring cavity 224 generated by the second source-drain electrode layer 22 and the third metal layer 223 in the second source-drain electrode layer 22, thereby causing packaging abnormality, further avoiding the GDS defect caused by water vapor intrusion due to packaging abnormality.

[0054] In some embodiments of the present application, Figure 4a and Figure 5As shown, the third metal layer 223 is located in the groove structure 11 of the inorganic layer 1, the side of the third metal layer 223 away from the second metal layer 222 is not higher than the surface of the inorganic layer 1 away from the substrate, and the side of the third metal layer 223 away from the second metal layer 222 is exposed outside the inorganic layer 1; or, the part of the third metal layer 223 close to the second metal layer 222 is located in the groove structure 11, and the part of the third metal layer 223 away from the second metal layer 222 exceeds the surface of the inorganic layer 1 away from the substrate; or, the third metal layer 223 is located outside the groove structure 11 of the inorganic layer 1, and the orthographic projection of the groove structure 11 on the substrate is located within the orthographic projection of the third metal layer 223 on the substrate. The materials of the first metal layer 221 and the third metal layer 223 are titanium; the material of the second metal layer 222 is aluminum.

[0055] In this embodiment, three positional relationships of the third metal layer 223 relative to the inorganic layer 1 are provided, namely: the third metal layer 223 is located in the groove structure 11 of the inorganic layer 1; the side of the third metal layer 223 away from the second metal layer 222 is not higher than the surface of the inorganic layer 1 away from the substrate, and the side of the third metal layer 223 away from the second metal layer 222 is exposed outside the inorganic layer 1; the entire third metal layer 223 is located outside the groove structure 11 of the inorganic layer 1.

[0056] For details, see 4a and Figure 4b , Figure 4b A schematic diagram of a structure in which the side of the third metal layer of the second source and drain layer of the barrier region provided in the embodiment of the present application away from the second metal layer is lower than the side of the inorganic layer away from the substrate. The first position relationship is that the entire third metal layer 223 is located inside the groove structure 11 of the inorganic layer 1, and the side of the third metal layer 223 away from the second metal layer 222 can be flush with the side of the inorganic layer 1 away from the substrate, or can be lower than the side of the inorganic layer 1 away from the substrate.

[0057] See also Figure 4c , Figure 4c A schematic diagram of a structure in which the side of the third metal layer of the second source and drain layer of the blocking region provided in the embodiment of the present application away from the second metal layer is higher than the side of the inorganic layer away from the substrate, and the side of the third metal layer close to the second metal layer is lower than the side of the inorganic layer away from the substrate. The second positional relationship is: the side of the third metal layer 223 close to the second metal layer 222 is located in the groove structure 11, and is lower than the surface of the inorganic layer 1 away from the substrate. At the same time, the side of the third metal layer 223 away from the second metal layer 222 is higher than the surface of the inorganic layer 1 away from the substrate. In this case, part of the third metal layer 223 is located inside the groove structure 11 of the inorganic layer 1, and the rest is located above the inorganic layer 1.

[0058] See also Figure 4d , Figure 4dA schematic diagram of the structure when the side of the third metal layer of the second source and drain layer of the barrier region provided in the embodiment of the present application close to the second metal layer is flush with the side of the inorganic layer away from the substrate. The third positional relationship is: the third metal layer 223 is located outside the groove structure 11 of the inorganic layer 1, and the orthographic projection of the groove structure 11 on the substrate is located within the orthographic projection of the third metal layer 223 on the substrate. In this case, the entire third metal layer 223 is located above the groove structure 11 of the inorganic layer 1, that is, the side of the third metal layer 223 of the second source and drain layer 22 close to the second metal layer 222 is flush with the side of the inorganic layer 1 away from the substrate, or the side of the third metal layer 223 of the second source and drain layer 22 close to the second metal layer 222 is adhered to the side of the inorganic layer 1 away from the substrate. In this case, the side of the third metal layer 223 close to the second metal layer 222 is adhered to the surface of the inorganic layer 1 away from the substrate; or it is flush with the surface of the inorganic layer 1 away from the substrate, and the orthographic projection area of ​​the third metal layer 223 on the substrate is larger than the orthographic projection area of ​​the groove structure 11 on the substrate, so that the third metal layer 223 can completely cover the groove structure 11, realize the encapsulation of the second metal layer 222, and ensure that the side of the second metal layer 222 close to the third metal layer 223 is not in contact with the external environment.

[0059] The three positional relationships between the third metal layer 223 and the inorganic layer 1 provided in this embodiment only need to ensure that the second metal layer 222 is completely embedded in the groove structure 11 of the inorganic layer 1, so that the side wall of the second metal layer 222 is completely in contact with the side wall of the groove structure 11 of the inorganic layer 1, and is completely encapsulated by the first metal layer 221 and the third metal layer 223 without contacting the external environment.

[0060] The materials of the first metal layer 221 and the third metal layer 223 are titanium; the material of the second metal layer 222 is aluminum. The third metal layer 223 can protect the second metal layer 222 from the influence of the anodic etching solution, so a material that is difficult to be removed by the anodic etching solution needs to be selected.

[0061] In some embodiments of the present application, Figure 7 and Figure 8 As shown, Figure 7 A top view of a display substrate provided in an embodiment of the present application, Figure 8 for Figure 7 A partial enlarged view of the M region in the middle; the structure at the junction of the second source and drain electrode layer 22 and the inorganic layer 1 is a zigzag structure. The zigzag structure is used to increase the edge area of ​​the junction between the second source and drain electrode layer 22 and the inorganic layer 1, thereby increasing the length of the invasion path when water vapor invades. The zigzag structure can be set according to actual conditions, for example, set to a sawtooth shape, an arc shape, etc. In some embodiments, for example Figure 8 As shown, the meandering structure is a finger-shaped structure.

[0062] In this embodiment, the junction of the second source-drain electrode layer 22 and the inorganic layer 1 is set to a zigzag structure, which is used to extend the length of the junction of the second source-drain electrode layer 22 and the inorganic layer 1. Among them, the finger-shaped structure can effectively extend the length of the junction of the second source-drain electrode layer 22 and the inorganic layer 1. In practical applications, other structures can be selected according to actual needs, as long as the effect of extending the length of the junction of the second source-drain electrode layer 22 and the inorganic layer 1 can be achieved.

[0063] The present application also provides a method for preparing a display substrate, which is used to prepare the display substrate described in any one of the above embodiments. Fig. 9 As shown, Fig. 9 The following is a flow chart of the preparation of a display substrate provided in an embodiment of the present application; the preparation method includes:

[0064] S001 obtain a pre-processed display substrate, the pre-processed display substrate includes an inorganic layer 1;

[0065] S002, etching a groove structure 11 on the side of the inorganic layer 1 in the barrier area B of the pre-processed display substrate away from the substrate through a first hole etching process, and forming a preset electrode cross-hole on the side of the inorganic layer 1 in the display area A of the pre-processed display substrate away from the substrate; wherein the groove structure 11 has a first depth;

[0066] S003 forming a first electrode cross-hole 18 at a preset electrode cross-hole position in the display area, and preparing a first source-drain electrode layer 21, a first flat layer 61, a second electrode cross-hole 611 and a second source-drain electrode layer 22 in the display area A;

[0067] S004: preparing a second source-drain electrode layer 22 in the groove structure 11 of the barrier region B, wherein the second source-drain electrode layer 22 comprises: a first metal layer 221, a second metal layer 222 and a third metal layer 223; the second metal layer 222 is disposed between the first metal layer 221 and the third metal layer 223; the third metal layer 223 cannot be etched by the anodic etching solution;

[0068] Among them, for the second source and drain layer 22 inside the groove structure 11, one side of its first metal layer 221 is attached to the bottom of the groove structure 11, the sum of the thickness of the first metal layer 221 and the second metal layer 222 is not greater than the first depth, and the third metal layer 223 encapsulates its second metal layer 222 in the groove structure 11;

[0069] S005 completes the subsequent preparation process of the display substrate.

[0070] In this embodiment, reference Figures 10a to 10e , Fig.10a A diagram of a first preparation process of a display substrate provided in an embodiment of the present application, Fig.10bA second preparation process diagram of a display substrate provided in an embodiment of the present application, Fig.10c A third preparation process diagram of a display substrate provided in an embodiment of the present application, Fig.10d A fourth preparation process diagram of a display substrate provided in an embodiment of the present application, Fig.10e The fifth preparation process diagram of the display substrate provided in the embodiment of the present application. The step S001 of obtaining a pre-processed display substrate includes:

[0071] forming a first insulating layer 12 on one side of the substrate;

[0072] A first buffer layer 13 (Barrier) is formed on a side of the first insulating layer 12 away from the substrate;

[0073] Forming a second insulating layer 14 on a side of the first buffer layer 13 away from the substrate;

[0074] A first semiconductor layer 31 (Active) is formed on a side of the second insulating layer 14 away from the substrate;

[0075] Forming a third insulating layer 15 on a side of the first semiconductor layer 31 away from the substrate;

[0076] The third insulating layer 15 is etched to form a first gate metal 41 (Gate1), so that the first gate metal 41 is formed inside the third insulating layer 15 and is located above the first semiconductor layer 31, and is spaced apart from the first semiconductor layer 31 by the third insulating layer 15;

[0077] forming a fourth insulating layer 16 on a side of the third insulating layer 15 away from the substrate, such that the fourth insulating layer 16 covers the third insulating layer 15;

[0078] Etching the fourth insulating layer 16 to form a second gate metal 42 (gate2), so that the second gate metal 42 is formed inside the fourth insulating layer 16;

[0079] Forming a second semiconductor layer 32 on a side of the fourth insulating layer 16 away from the substrate;

[0080] Forming a fifth insulating layer 17 on a side of the second semiconductor layer 32 away from the substrate;

[0081] The fifth insulating layer 17 is etched to form a third gate metal 43, so that the third gate metal 43 is formed inside the fifth insulating layer 17 and is located above the second semiconductor layer 32, and is spaced apart from the first semiconductor layer 31 by the fifth insulating layer 17;

[0082] The inorganic layer 1 includes a first insulating layer 12 , a first buffer layer 13 , a second insulating layer 14 , a third insulating layer 15 , a fourth insulating layer 16 and a fifth insulating layer 17 .

[0083] The materials of the first insulating layer 12 and the second insulating layer 14 are polyimide (PI); the materials of the third insulating layer 15 and the fourth insulating layer 16 are silicon dioxide and silicon nitride (Gi, silicon dioxide and silicon nitride insulating layer). The fifth insulating layer 17 includes: a buffer layer (buffer), a silicon dioxide and silicon nitride insulating layer (gi) and an indium gallium zinc oxide layer (igzo).

[0084] The first hole etching process is used to etch a groove structure 11 on the side of the inorganic layer 1 in the blocking area B of the pre-processed display substrate away from the substrate, and a preset electrode cross-hole is formed on the side of the inorganic layer 1 in the display area A of the pre-processed display substrate away from the substrate, including: forming a first electrode cross-hole 18 at the preset electrode cross-hole position in the display area, performing a second hole etching process and a third hole etching process at the preset electrode cross-hole position in the display area to form a first electrode cross-hole 18 with a second depth; one of the preset electrode cross-holes is not subjected to the second hole etching process and the third hole etching process to form a first electrode cross-hole 18 with a third depth; the first source and drain 21 in the first electrode cross-hole 18 is provided with a horizontal extension portion, the horizontal extension portion is located on the side of the fifth insulating layer 17 away from the substrate, and the edge position of the horizontal extension portion is attached to the side of the fifth insulating layer 17 away from the substrate.

[0085] At the same time, a groove structure with a first depth is formed on the side of the inorganic layer 1 of the barrier region B away from the substrate through the first hole etching process, and a second source-drain electrode layer 22 is prepared in the groove structure 11 of the barrier region B, and for the second source-drain electrode layer 22 inside the groove structure 11, one side of its first metal layer 221 is attached to the bottom of the groove structure 11, and the sum of the thickness of its first metal layer 221 and its second metal layer 222 is not greater than the first depth, and its third metal layer 223 encapsulates its second metal layer 222 in the groove structure 11. Ensure that the sidewall of the groove structure 11 is completely attached to the sidewall of the second metal layer 222, and the upper and lower surfaces of the second metal layer 222 are encapsulated by the bottom of the groove structure 11 and the third metal layer 223, so that the second metal layer 222 is not in contact with the external environment. When performing the anodic etching step, since the second metal layer 222 is located inside the groove structure 11 of the inorganic layer 1 and is completely encapsulated, the problem of the second metal layer 222 in the second source and drain layer 22 being easily etched away by the anodic etching solution to form a wiring cavity 224 is effectively improved, and the warping of the third metal layer 223 at the location of the wiring cavity 224 is further reduced.

[0086] In some embodiments of the present application, Figures 4a to 4d and Figure 5As shown, the third metal layer 223 is located in the groove structure 11 of the inorganic layer 1, the side of the third metal layer 223 away from the second metal layer 222 is not higher than the surface of the inorganic layer 1 away from the substrate, and the side of the third metal layer 223 away from the second metal layer 222 is exposed outside the inorganic layer 1; or, the portion of the third metal layer 223 close to the second metal layer 222 is located in the groove structure 11, and the portion of the third metal layer 223 away from the second metal layer 222 exceeds the surface of the inorganic layer 1 away from the substrate; or, the third metal layer 223 is located outside the groove structure 11 of the inorganic layer 1, and the orthographic projection of the groove structure 11 on the substrate is located within the orthographic projection of the third metal layer 223 on the substrate.

[0087] The technical effects obtained by the solution of this embodiment are consistent with the technical effects in the aforementioned embodiments, and will not be described in detail here.

[0088] In some embodiments of the present application, reference Fig.10e , Fig.10f and Figure 6 As shown, Fig.10f The sixth preparation process diagram of the display substrate provided in the embodiment of the present application. The subsequent preparation process includes:

[0089] Preparing a second planar layer 62 in the display area A of the display substrate;

[0090] A pixel definition layer 71 is formed on a side of the second planar layer 62 in the display area A away from the substrate;

[0091] An isolation structure 5 is formed on a side of the inorganic layer 1 in the barrier region B away from the substrate;

[0092] An anode layer 72 is formed on a side of the pixel definition layer 71 away from the substrate by anode etching;

[0093] An electroluminescent layer (EL, not shown in the figure), a cathode layer (not shown in the figure), a first encapsulation layer 81, an inkjet printing layer 73 and a second encapsulation layer 82 are sequentially formed on the side of the anode layer 72 away from the substrate;

[0094] The inkjet printing layer 73 is disposed in the display area A, the first encapsulation layer 81 and the second encapsulation layer 82 cover the display area A and the barrier area B, and the second encapsulation layer 82 in the barrier area B is attached to the first encapsulation layer 81 .

[0095] Finally, the formation Figure 6 The display substrate is shown.

[0096] In this embodiment, during the process of performing anodic etching to form the anode layer 72, since the second source-drain electrode layer 22 is disposed in the groove structure 11 of the inorganic layer 1 and is completely encapsulated and not in contact with the outside, the anodic etching solution cannot contact the second source-drain electrode layer 22, thereby avoiding the problem of the second source-drain electrode 22 forming a wiring cavity 224 and the warping of the third metal layer 223. Therefore, after the first encapsulation layer 81 and the second encapsulation layer 82 are formed, the first encapsulation layer 81 covering the surface of the second source-drain electrode layer 22 away from the substrate and the second encapsulation layer 82 covering the first encapsulation layer 81 will not be lifted up due to the warping of the wiring cavity 224 generated by the second source-drain electrode layer 22 and the third metal layer 223 in the second source-drain electrode layer 22, thereby causing packaging abnormality, further avoiding the GDS defect caused by water vapor intrusion due to packaging abnormality.

[0097] The isolation structure 5 is formed on the side of the inorganic layer 1 in the blocking area B away from the substrate, including: forming a PI layer on the surface of the inorganic layer 1, and etching the PI layer to form the isolation structure. The PI layer and the pixel definition layer 71 are made of the same material, for example, polyimide. At the same time, the isolation structure 5 includes: a first isolation column 51, a second isolation column 52 and a third isolation column 53; the first isolation column 51 is located on the side of the blocking area B close to the display area A and is spaced from the display area A; the side of the first isolation column 51 close to the display area A, the second encapsulation layer 82, the inorganic layer 1 and the side of the display area A close to the blocking area B form a cavity structure; the cavity structure is used to accommodate the inkjet printing layer 73 overflowing from the display area A to the blocking area B; the side of the first isolation column 51 close to the spacing area is covered by the inkjet printing layer 73; the second isolation column 52 is located on the side of the first isolation column 51 away from the display area A and is spaced from the first isolation column 51; the third isolation column 53 is located on the side of the second isolation column 52 away from the display area A and is spaced from the second isolation column 52. The technical effect obtained by the scheme here is consistent with the technical effect in the aforementioned embodiment, and will not be described in detail here.

[0098] The first encapsulation layer 81 is attached to the first flat layer 61 and the second flat layer 62 on the side close to the barrier region B, and is attached to the inorganic layer 1, the second source-drain electrode layer 22, the first isolation column 51, the second isolation column 52 and the third isolation column 53 of the barrier region B, thereby forming an encapsulation, which effectively reduces the infiltration of the inkjet printing layer 73. The second encapsulation layer 82 of the barrier region B is attached to the first encapsulation layer 81 to form a second heavy encapsulation.

[0099] An embodiment of the present application further provides a display device, which includes a display substrate according to any one of the above embodiments.

[0100] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0101] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0102] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A display substrate, characterized in that: include: Display area and blocking area; The blocking area includes: An inorganic layer and a second source-drain electrode layer; the second source-drain electrode layer includes a first metal layer, a second metal layer and a third metal layer; the second metal layer is disposed between the first metal layer and the third metal layer; A groove structure is provided on a side of the inorganic layer away from the substrate; A side of the first metal layer away from the second metal layer is attached to the bottom of the groove structure, the second metal layer is completely embedded in the groove structure, and the third metal layer encapsulates the second metal layer in the groove structure; The material of the second metal layer can be etched by an anodic etching solution, and the material of the third metal layer cannot be etched by an anodic etching solution.

2. The display substrate according to claim 1, characterized in that: The third metal layer is located in the groove structure of the inorganic layer, the side of the third metal layer away from the second metal layer is not higher than the surface of the inorganic layer away from the substrate, and the side of the third metal layer away from the second metal layer is exposed outside the inorganic layer; Or, a portion of the third metal layer close to the second metal layer is located in the groove structure, and a portion of the third metal layer away from the second metal layer exceeds a surface of the inorganic layer away from the substrate; Alternatively, the third metal layer is located outside the groove structure of the inorganic layer, and the orthographic projection of the groove structure on the substrate is located inside the orthographic projection of the third metal layer on the substrate.

3. The display substrate according to claim 1, characterized in that: The materials of the first metal layer and the third metal layer are titanium; The material of the second metal layer is aluminum.

4. The display substrate according to claim 1, characterized in that: The structure of the second source-drain electrode layer at the interface with the inorganic layer is a zigzag structure.

5. The display substrate according to claim 4, characterized in that: The zigzag structure is a finger-shaped structure.

6. The display substrate according to claim 1, characterized in that: The blocking area further includes: An isolation structure, wherein the isolation structure is disposed on a side of the inorganic layer away from the substrate; The isolation structure comprises: a first isolation column, a second isolation column and a third isolation column; The first isolation column is located on a side of the blocking area close to the display area and is spaced apart from the display area; The second isolation column is located at a side of the first isolation column away from the display area and is spaced apart from the first isolation column; The third isolation column is located at a side of the second isolation column away from the display area and is spaced apart from the second isolation column; a first encapsulation layer, the first encapsulation layer covering a surface of the isolation structure, the inorganic layer, and the second source and drain electrode layer away from the substrate; A second packaging layer, wherein the second packaging layer covers the first packaging layer.

7. A method for preparing a display substrate, characterized in that: include: Obtaining a pre-processed display substrate, wherein the pre-processed display substrate comprises an inorganic layer; By means of a first hole etching process, a groove structure is etched on a side of the inorganic layer in the barrier region of the pre-processed display substrate away from the substrate, and a preset electrode cross-hole is formed on a side of the inorganic layer in the display region of the pre-processed display substrate away from the substrate; wherein the groove structure has a first depth; Forming a first electrode cross-hole at a preset electrode cross-hole position in the display area, and preparing a first source-drain electrode layer, a first flat layer, a second electrode cross-hole and a second source-drain electrode layer in the display area; A second source-drain electrode layer is prepared in the groove structure of the barrier region, wherein the second source-drain electrode layer comprises: a first metal layer, a second metal layer and a third metal layer; the second metal layer is arranged between the first metal layer and the third metal layer; the third metal layer cannot be etched by the anodic etching solution; Among them, for the second source and drain electrode layer inside the groove structure, one side of its first metal layer is attached to the bottom of the groove structure, the sum of the thickness of its first metal layer and its second metal layer is not greater than the first depth, and its third metal layer encapsulates its second metal layer in the groove structure; Complete the subsequent preparation process of the display substrate.

8. The preparation method according to claim 7, characterized in that: The third metal layer is located in the groove structure of the inorganic layer, the side of the third metal layer away from the second metal layer is not higher than the surface of the inorganic layer away from the substrate, and the side of the third metal layer away from the second metal layer is exposed outside the inorganic layer; Or, a portion of the third metal layer close to the second metal layer is located in the groove structure, and a portion of the third metal layer away from the second metal layer exceeds a surface of the inorganic layer away from the substrate; Alternatively, the third metal layer is located outside the groove structure of the inorganic layer, and the orthographic projection of the groove structure on the substrate is located inside the orthographic projection of the third metal layer on the substrate.

9. The preparation method according to claim 7, characterized in that: The subsequent preparation process comprises: preparing a second planarization layer in a display area of ​​the display substrate; forming a pixel definition layer on a side of the second planar layer in the display area away from the substrate; forming an isolation structure on a side of the inorganic layer in the barrier region away from the substrate; forming an anode layer on a side of the pixel definition layer away from the substrate by anode etching; Sequentially forming an electroluminescent layer, a cathode layer, a first encapsulation layer, an inkjet printing layer, and a second encapsulation layer on a side of the anode layer away from the substrate; The inkjet printing layer is arranged in the display area, the first encapsulation layer and the second encapsulation layer cover the display area and the blocking area, and the second encapsulation layer in the blocking area is attached to the first encapsulation layer.

10. A display device, characterized in that: A display substrate comprising any one of claims 1-6.

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