A preparation method of a perovskite solar cell based on passivation of a nicotinamide derivative material

Abstract

The application relates to a preparation method of a perovskite solar cell based on passivation of a nicotinamide derivative material, and relates to the technical field of solar cells. The cell is of a P-I-N structure, and comprises, from bottom to top, a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer and a metal electrode. The application provides a nicotinamide derivative material for the interface modification layer, which comprises 2-amino nicotinamide and 6-amino nicotinamide. An isopropyl alcohol solution containing 2-amino nicotinamide and 6-amino nicotinamide is used to perform synergistic passivation treatment on the perovskite light absorption layer to prepare the interface modification layer. The application reduces defects on the surface of the perovskite thin film, improves the quality of the perovskite thin film, promotes carrier transport, effectively inhibits non-radiative recombination, and thus improves the photoelectric conversion efficiency of the perovskite solar cell.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cells, and particularly relates to a preparation method of a perovskite solar cell based on nicotinamide derivative material passivation. BACKGROUND

[0002] Hybrid organic-inorganic lead halide perovskites have made remarkable progress in the field of photovoltaic (PV) technology, because they have excellent optoelectronic properties, including high absorption coefficient, long carrier lifetime and diffusion length. Wide band gap perovskite materials can be used as top cells in tandem cells to improve the utilization of solar spectrum and further improve the photoelectric conversion efficiency. As a top cell in a tandem cell, its optimal band gap range is 1.65-1.75 eV. However, due to the characteristics of perovskite materials, a large number of defects will inevitably be formed at the grain boundaries and surfaces during the film formation process of multi-component perovskite. These defects can accelerate non-radiative recombination at high voltage loss, and are also the main reason for the reduction of photoelectric conversion efficiency (PCE) of perovskite solar cells (PSCs). According to literature reports, the trap density of the surface of the perovskite film is 1-2 orders of magnitude larger than that of the inner film, because there are many deep level traps (ion defects) at the interface, so interface passivation is the most effective method to reduce non-radiative recombination loss.

[0003] In order to overcome the above problems, a large number of interface passivation strategies have been reported. Researchers have been committed to suppressing non-radiative recombination loss by passivating Pb 2+ positive defects and halide negative defects, so as to further improve the PCE and the stability of PSCs. For example, metal halides (such as KC1, NaF, RbF), small organic molecules (such as theophylline, 2-amino terephthalic acid), and organic ammonium salts (such as phenethylamine ammonium iodide (PEAI), 1-naphthylmethylamine ammonium iodide (NMAI)). Although many double-passivation molecules have been developed to reduce the surface defects of perovskite, most of the studies are from the perspective of functional groups to study the molecules, and the effect of passivation is studied by changing the type of group. There are limited studies on improving the passivation effect by changing the position of the functional group. In addition, only a single molecule is used for passivation, and there is an adsorption limit for suppressing defects on the perovskite film, resulting in insufficient coordination of defect sites.

[0004] In summary, the problems existing in the passivation materials of the current organic-inorganic hybrid wide band gap perovskite solar cells can be summarized as follows: 1) for single molecule passivation of perovskite film, there is an adsorption limit for suppressing defects, resulting in insufficient coordination of defect sites. 2) for double-passivation molecule materials, most of the studies are from the perspective of functional groups to study the molecules, and the effect of passivation is studied by changing the type of group. There are limited studies on the passivation effect from the group position. SUMMARY

[0005] The present invention aims to overcome the aforementioned shortcomings of the prior art by providing a method for preparing a perovskite solar cell using a nicotinamide derivative material passivation method. The nicotinamide derivative material, suitable for use in the interface modification layer, includes 2-aminonicotinamide and 6-aminonicotinamide. An isopropanol solution containing 2-aminonicotinamide and 6-aminonicotinamide is used to passivate the perovskite light-absorbing layer. This reduces surface defects in the perovskite film, improves the quality of the perovskite film, promotes carrier transport, and effectively inhibits non-radiative recombination, thereby enhancing the photoelectric conversion efficiency of the perovskite solar cell.

[0006] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0007] A method for preparing a nicotinamide derivative-based passivated perovskite solar cell. The cell has a PIN structure and comprises, from bottom to top, a transparent conductive substrate, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer, and a metal electrode. The perovskite solar cell has a band gap of 1.6 to 1.72 eV.

[0008] The perovskite light absorbing layer satisfies the following conditions simultaneously:

[0009] The perovskite light absorption layer is an organic-inorganic hybrid multi-halogen mixed perovskite;

[0010] The thickness of the perovskite light absorbing layer is 500nm-1μm;

[0011] The interface modification layer materials are 2-aminonicotinamide and 6-aminonicotinamide, and their chemical formulas are shown in Formula 1 and Formula 2:

[0012]

[0013] The interface modification layer is obtained by passivating the perovskite absorption layer with a passivation solution containing 2-aminonicotinamide and 6-aminonicotinamide by scraping or spin coating.

[0014] In some embodiments, the transparent conductive substrate is selected from one of FTO conductive glass and ITO conductive glass.

[0015] In some embodiments, the hole transport layer is made of a material selected from self-assembled monolayers, P3CT-N, NiO x One or more organic or inorganic hole transport materials;

[0016] The self-assembled monolayer includes one or more of (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, and (2-(7H-dibenzocarbazole-7-yl)ethyl)phosphonic acid self-assembled monolayer.

[0017] In some embodiments, the material of the electron transport layer is selected from PCBM, C 60 One of them.

[0018] In some embodiments, the material of the buffer layer is selected from one of BCP and SnO2.

[0019] In some embodiments, the metal electrode satisfies the following conditions simultaneously:

[0020] The metal electrode is a metal electrode prepared by a thermal evaporation process;

[0021] The thickness of the metal electrode is 50-120 nm.

[0022] In some embodiments, the metal electrode is preferably Ag, Cu, or Au.

[0023] In some embodiments, the method for preparing the interface modification layer includes:

[0024] The perovskite light absorption layer is passivated by using a solution spin coating method with a solution containing 2-aminonicotinamide / 6-aminonicotinamide / 2-aminonicotinamide+6-aminonicotinamide isopropanol to obtain a passivated perovskite film;

[0025] The spin-coated perovskite film is subjected to a standing treatment to obtain an interface modification layer.

[0026] In some embodiments, during the spin coating operation, the spin coating speed is 3000 r / min-8000 r / min, and the spin coating time is 20 s-90 s.

[0027] In some embodiments, the standing time of the standing treatment is 5 min to 60 min.

[0028] Furthermore, the present invention provides an application of the interface modification layer prepared by the above method, which is suitable for perovskite-based tandem solar cells and includes at least the following structural devices:

[0029] 1) Inorganic perovskite / perovskite tandem solar cells;

[0030] 2) Inorganic perovskite / crystalline silicon tandem solar cells;

[0031] 3) Inorganic perovskite / copper indium gallium selenide tandem solar cells.

[0032] Advantages and positive effects of the present invention:

[0033] 1. The present invention proposes a method for preparing a perovskite solar cell based on passivation using a nicotinamide derivative material. By passivating the surface of the perovskite light absorption layer with an isopropyl alcohol solution mixed with 2-aminonicotinamide and 6-aminonicotinamide, defects on the surface and grain boundaries of the wide-bandgap perovskite film are effectively reduced, thereby improving the quality of the perovskite film.

[0034] 2. The present invention uses two isomers of bimolecular passivation materials, 2-aminonicotinamide and 6-aminonicotinamide, to passivate the perovskite light absorption layer, using the carbonyl group of the nicotinamide structure to react with the uncoordinated Pb in the perovskite. 2+ The ions form strong coordination, which effectively reduces the surface defects of the perovskite, thereby promoting carrier transport, inhibiting non-radiative recombination, and improving the open circuit voltage and light conversion efficiency of perovskite solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 Schematic diagram of the structure of the perovskite solar cell described in Example 1; in the figure: 1 is a transparent conductive substrate, 2 is a hole transport layer, 3 is a perovskite light absorption layer, 4 is an interface modification layer, 5 is an electron transport layer, 6 is a buffer layer, and 7 is a metal electrode;

[0036] Figure 2 is the JV curve of the perovskite solar cell described in Example 1;

[0037] Figure 3 JV curve of the perovskite solar cell described in Example 2;

[0038] Figure 4 is the JV curve of the perovskite solar cell described in Example 3;

[0039] Figure 5 This is the JV curve of the perovskite solar cell described in Comparative Example 1;

[0040] Figure 6 XRD patterns of the perovskite light absorbing layers corresponding to Examples 1-3 and Comparative Example 1; DETAILED DESCRIPTION

[0041] Below in conjunction with accompanying drawing and specific embodiment, technical scheme of the present invention is described in further detail.Provide the following embodiment in order to better further understand the present invention, is not limited to the described best mode, does not limit the content and protection scope of the present invention.If specific experimental steps or conditions are not indicated in the embodiment, the operation or condition of the conventional experimental steps described in the literature in this area can be carried out.If the manufacturer of reagents or instruments is not indicated, they are all conventional reagent products that can be obtained by commercial purchase.

[0042] The perovskite solar cell passivated with a nicotinamide derivative material provided by the present invention has the following structure, comprising, from bottom to top, a transparent conductive substrate 1, a hole transport layer 2, a perovskite light absorption layer 3, an interface modification layer 4, an electron transport layer 5, a buffer layer 6, and a metal electrode 7. The perovskite light absorption layer 3 has a thickness of 500 nm to 1 μm and satisfies the following conditions: the perovskite light absorption layer 3 is an organic-inorganic hybrid multi-halogen mixed perovskite.

[0043] The interface modification layer 4 is formed by passivating the perovskite absorption layer 3 with a passivation solution containing 2-aminonicotinamide and 6-aminonicotinamide by blade coating or spin coating. The chemical formulas of 2-aminonicotinamide and 6-aminonicotinamide are shown in Formula 1 and Formula 2:

[0044]

[0045]

[0046] Example 1

[0047] The band gap of a PIN-type perovskite solar cell provided in this embodiment is about 1.68 eV, and its structure is as follows: Figure 1 As shown, from bottom to top, it includes: a transparent conductive substrate, ph-2PACz (HTL), a perovskite light absorption layer, an interface modification layer, a PCBM (ETL), a BCP (buffer layer), and a silver electrode.

[0048] The preparation method comprises the following steps:

[0049] Step 1: Pretreatment of the transparent conductive substrate: ultrasonically clean the ITO conductive glass with detergent, deionized water, acetone, and isopropyl alcohol in sequence, blow dry with nitrogen, and treat with ultraviolet ozone for 15-20 minutes.

[0050] Step 2, preparation of hole transport layer: (1) spin coating ph-2PACz solution on the ITO surface as the hole transport layer; (2) annealing at 100°C for 10 minutes.

[0051] Step 3, preparation of perovskite light absorption layer: (1) preparation of 1.5M MA y Csx FA 1-x-y Pb(I z Br 1-z )3 perovskite precursor solution; (2) preparing a perovskite wet film by a one-step doctor blade coating method using the perovskite precursor solution obtained in step (1); (4) annealing the obtained wet film for 30 minutes and cooling it to room temperature to obtain a perovskite light absorption layer.

[0052] Step 4, preparing an interface modification layer: spin-coating a 2-aminonicotinamide isopropanol solution on the perovskite surface as an interface modification layer, and spin-coating a 2-aminonicotinamide isopropanol solution on the perovskite light absorption layer by spin coating, and letting it stand for 10 minutes.

[0053] Step 5, preparing the electron transport layer: spin-coating PCBM (PCBM / CB=20 mg / mL) as the electron transport layer on the surface of the interface modification layer at a spin-coating speed of 2000 r / min.

[0054] Step 6, preparing a buffer layer: spin-coating BCP (BCP / IPA=0.5 mg / mL) as a buffer layer on the surface of the electron transport layer at a spin-coating speed of 5000 r / min.

[0055] Step 7, preparing a metal electrode: preparing a metal silver electrode on the surface of the buffer layer with a thickness of 80 nm.

[0056] Step 8, Photovoltaic performance test: The effective area of ​​the perovskite solar cell device prepared by the above method is 0.0755cm 2 , at 100mW / cm 2 The measurement was performed under light intensity (AM 1.5G), with a scanning interval from 1.3V to 0V and a scanning step of 0.02V.

[0057] The JV characteristic curve of the obtained perovskite solar cell is as follows Figure 2 As shown by Figure 2 It can be seen that the open circuit voltage of the perovskite solar cell is 1.17V, the fill factor is 77.43%, and the short circuit current density is 20.97mA / cm 2 , the photoelectric conversion efficiency is 19.10%.

[0058] Example 2

[0059] The band gap of a PIN-type perovskite solar cell provided in this embodiment is about 1.68 eV, and its structure is as follows: Figure 1 As shown, from bottom to top, it includes: a transparent conductive substrate, ph-2PACz (HTL), a perovskite light absorption layer, an interface modification layer, a PCBM (ETL), a BCP (buffer layer), and a silver electrode.

[0060] The preparation method comprises the following steps:

[0061] Step 1: Pretreatment of the transparent conductive substrate: ultrasonically clean the ITO conductive glass with detergent, deionized water, acetone, and isopropyl alcohol in sequence, blow dry with nitrogen, and treat with ultraviolet ozone for 15-20 minutes.

[0062] Step 2, preparation of hole transport layer: (1) spin coating ph-2PACz solution on the ITO surface as the hole transport layer; (2) annealing at 100°C for 10 minutes.

[0063] Step 3, preparation of perovskite light absorption layer: (1) preparation of 1.5M MA y Cs x FA 1-x-y Pb(I z Br 1-z )3 perovskite precursor solution; (2) preparing a perovskite wet film by a one-step doctor blade coating method using the perovskite precursor solution obtained in step (1); (4) annealing the obtained wet film for 30 minutes and cooling it to room temperature to obtain a perovskite light absorption layer.

[0064] Step 4, preparing an interface modification layer: spin-coating a 6-aminonicotinamide isopropanol solution on the perovskite surface as an interface modification layer, and spin-coating a 6-aminonicotinamide isopropanol solution on the perovskite light absorption layer by spin coating, and letting it stand for 10 minutes.

[0065] Step 5, preparing the electron transport layer: spin-coating PCBM (PCBM / CB=20 mg / mL) as the electron transport layer on the surface of the interface modification layer at a spin-coating speed of 2000 r / min.

[0066] Step 6, preparing a buffer layer: spin-coating BCP (BCP / IPA=0.5 mg / mL) as a buffer layer on the surface of the electron transport layer at a spin-coating speed of 5000 r / min.

[0067] Step 7, preparing a metal electrode: preparing a metal silver electrode on the surface of the buffer layer with a thickness of 80 nm.

[0068] Step 8, Photovoltaic performance test: The effective area of ​​the perovskite solar cell device prepared by the above method is 0.0755cm 2 , at 100mW / cm 2 The measurement was performed under light intensity (AM 1.5G), with a scanning interval from 1.3V to 0V and a scanning step of 0.02V.

[0069] The JV characteristic curve of the obtained perovskite solar cell is as follows Figure 3 As shown by Figure 3 It can be seen that the open circuit voltage of the perovskite solar cell is 1.18V, the fill factor is 82.59%, and the short circuit current density is 20.28mA / cm2 , the photoelectric conversion efficiency is 19.90%.

[0070] Example 3

[0071] The band gap of a PIN-type perovskite solar cell provided in this embodiment is about 1.68 eV, and its structure is as follows: Figure 1 As shown, from bottom to top, it includes: a transparent conductive substrate, ph-2PACz (HTL), a perovskite light absorption layer, an interface modification layer, a PCBM (ETL), a BCP (buffer layer), and a silver electrode.

[0072] The preparation method comprises the following steps:

[0073] Step 1: Pretreatment of the transparent conductive substrate: ultrasonically clean the ITO conductive glass with detergent, deionized water, acetone, and isopropyl alcohol in sequence, blow dry with nitrogen, and treat with ultraviolet ozone for 15-20 minutes.

[0074] Step 2, preparation of hole transport layer: (1) spin coating ph-2PACz solution on the ITO surface as the hole transport layer; (2) annealing at 100°C for 10 minutes.

[0075] Step 3, preparation of perovskite light absorption layer: (1) preparation of 1.5M MA y Cs x FA 1-x-y Pb(I z Br 1-z )3 perovskite precursor solution; (2) preparing a perovskite wet film by a one-step doctor blade coating method using the perovskite precursor solution obtained in step (1); (4) annealing the obtained wet film for 30 minutes and cooling it to room temperature to obtain a perovskite light absorption layer.

[0076] Step 4, prepare the interface modification layer: spin-coat a 2-aminonicotinamide 6-aminonicotinamide mixed isopropanol solution on the perovskite surface as the interface modification layer, and spin-coat a 2-aminonicotinamide 6-aminonicotinamide mixed isopropanol solution on the perovskite light absorption layer by spin coating, and let it stand for 10 minutes.

[0077] Step 5, preparing the electron transport layer: spin-coating PCBM (PCBM / CB=20 mg / mL) as the electron transport layer on the surface of the interface modification layer at a spin-coating speed of 2000 r / min.

[0078] Step 6, preparing a buffer layer: spin-coating BCP (BCP / IPA=0.5 mg / mL) as a buffer layer on the surface of the electron transport layer at a spin-coating speed of 5000 r / min.

[0079] Step 7, preparing a metal electrode: preparing a metal silver electrode on the surface of the buffer layer with a thickness of 80 nm.

[0080] Step 8, Photovoltaic performance test: The effective area of ​​the perovskite solar cell device prepared by the above method is 0.0755cm 2 , at 100mW / cm 2 The measurement was performed under light intensity (AM 1.5G), with a scanning interval from 1.3V to 0V and a scanning step of 0.02V.

[0081] The JV characteristic curve of the obtained perovskite solar cell is as follows Figure 4 As shown by Figure 4 It can be seen that the open circuit voltage of the perovskite solar cell is 1.20V, the fill factor is 81.09%, and the short circuit current density is 20.85mA / cm 2 , the photoelectric conversion efficiency is 20.36%.

[0082] Comparative Example 1

[0083] The band gap of a PIN-type perovskite solar cell provided in this comparative example is about 1.68 eV, and the structure is as follows Figure 1 As shown, from bottom to top, it includes: a transparent conductive substrate, ph-2PACz (HTL), a perovskite light absorption layer, an interface modification layer, a PCBM (ETL), a BCP (buffer layer), and a silver electrode.

[0084] The preparation method comprises the following steps:

[0085] Step 1: Pretreatment of the transparent conductive substrate: ultrasonically clean the ITO conductive glass with detergent, deionized water, acetone, and isopropyl alcohol in sequence, blow dry with nitrogen, and treat with ultraviolet ozone for 15-20 minutes.

[0086] Step 2, preparation of hole transport layer: (1) spin coating ph-2PACz solution on the ITO surface as the hole transport layer; (2) annealing at 100°C for 10 minutes.

[0087] Step 3, preparation of perovskite light absorption layer: (1) preparation of 1.5M MA y Cs x FA 1-x-y Pb(I z Br 1-z )3 perovskite precursor solution; (2) preparing a perovskite wet film by a one-step doctor blade coating method using the perovskite precursor solution obtained in step (1); (4) annealing the obtained wet film for 30 minutes and cooling it to room temperature to obtain a perovskite light absorption layer.

[0088] Step 5, preparing the electron transport layer: spin-coating PCBM (PCBM / CB=20 mg / mL) as the electron transport layer on the surface of the interface modification layer at a spin-coating speed of 2000 r / min.

[0089] Step 6, preparing a buffer layer: spin-coating BCP (BCP / IPA=0.5 mg / mL) as a buffer layer on the surface of the electron transport layer at a spin-coating speed of 5000 r / min.

[0090] Step 7, preparing a metal electrode: preparing a metal silver electrode on the surface of the buffer layer with a thickness of 80 nm.

[0091] Step 8, Photovoltaic performance test: The effective area of ​​the perovskite solar cell device prepared by the above method is 0.0755cm 2 , at 100mW / cm 2 The measurement was performed under light intensity (AM 1.5G), with a scanning interval from 1.3V to 0V and a scanning step of 0.02V.

[0092] The JV characteristic curve of the obtained perovskite solar cell is as follows Figure 5 As shown by Figure 5 It can be seen that the open circuit voltage of the perovskite solar cell is 1.17V, the fill factor is 72.50%, and the short circuit current density is 20.74mA / cm 2 , the photoelectric conversion efficiency is 17.61%.

[0093] The XRD patterns of the perovskite films obtained in Examples 1-3 and Comparative Example 1 are as follows: Figure 6 As shown, the use of interface modification layer passivation significantly improves the crystalline quality of perovskite films.

[0094] In summary, the present invention uses two isomers of bimolecular passivation materials, 2-aminonicotinamide and 6-aminonicotinamide, to synergistically passivate the perovskite light absorption layer, and utilizes the carbonyl group of the nicotinamide structure to interact with the uncoordinated Pb in the perovskite. 2+ The ions form strong coordination, effectively reducing surface defects in the perovskite. This promotes carrier transport, inhibits non-radiative recombination, and improves the open-circuit voltage and light conversion efficiency of perovskite solar cells. This method is simple to operate, easy to implement, and has a high reproducibility, showing promising application prospects.

[0095] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as within the scope of protection of the present invention.

Claims

1. A perovskite solar cell passivated by nicotinamide derivative materials, characterized in that: The cell has a PIN structure and comprises, from bottom to top, a transparent conductive substrate (1), a hole transport layer (2), a perovskite light absorption layer (3), an interface modification layer (4), an electron transport layer (5), a buffer layer (6) and a metal electrode (7); the band gap of the perovskite solar cell is 1.6 to 1.72 eV; The perovskite light absorbing layer (3) satisfies the following conditions simultaneously: The perovskite light absorption layer (3) is an organic-inorganic hybrid multi-halogen mixed perovskite; The thickness of the perovskite light absorbing layer (3) is 500nm-1μm; The interface modification layer (4) is obtained by passivating the perovskite absorption layer (3) with a passivation solution containing 2-aminonicotinamide and 6-aminonicotinamide by scraping or spin coating.

2. The perovskite solar cell according to claim 1, wherein The transparent conductive substrate (1) is selected from one of FTO conductive glass and ITO conductive glass.

3. The perovskite solar cell according to claim 1, wherein: The material of the hole transport layer (2) is selected from self-assembled monolayer, P3CT-N organic or NiO x One or more inorganic hole transport materials; The self-assembled monolayer includes one or more of (2-(9H-carbazole-9-yl)ethyl)phosphonic acid, (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl)phosphonic acid, (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid, and (2-(7H-dibenzocarbazole-7-yl)ethyl)phosphonic acid self-assembled monolayer.

4. The perovskite solar cell according to claim 1, wherein The material of the electron transport layer (5) is selected from [6,6]phenyl C61-butyric acid methyl ester PC 61 BM, fullerene C 60 One of them.

5. The perovskite solar cell according to claim 1, wherein: The material of the buffer layer (6) is selected from one of bathocuproin (BCP) and SnO2.

6. The perovskite solar cell according to claim 1, wherein: The metal electrode (7) satisfies the following conditions simultaneously: The metal electrode (7) is a metal electrode prepared by a thermal evaporation process; The thickness of the metal electrode (7) is 50 to 120 nm.

7. The method for preparing a perovskite solar cell according to any one of claims 1 to 6, characterized in that: The perovskite structure is a PIN-type structure, which comprises, from bottom to top, a transparent conductive substrate (1), a hole transport layer (2), a perovskite light absorption layer (3), an interface modification layer (4), an electron transport layer (5), a buffer layer (6) and a metal electrode (7), wherein the perovskite light absorption layer (3) is an organic-inorganic hybrid multi-halogen mixed perovskite; The preparation method of the interface modification layer (4) comprises: The perovskite light absorption layer (3) is passivated using a solution containing 2-aminonicotinamide and 6-aminonicotinamide isopropanol by solution spin coating to obtain a passivated perovskite film; The spin-coated perovskite film is subjected to a static treatment to prepare an interface modification layer (4).

8. The method for preparing a perovskite solar cell according to claim 7, wherein: In the spin coating operation, the spin coating speed is 3000 r / min-8000 r / min, and the spin coating time is 20 s-90 s.

9. The method for preparing a perovskite solar cell according to claim 7, wherein: The standing treatment has a standing time of 5 min to 60 min.

10. The method according to any one of claims 7 to 9, characterized in that The perovskite solar cell is suitable for a perovskite-based tandem solar cell and includes at least one or more of the following structural devices: 1) Inorganic perovskite / perovskite tandem solar cells; 2) Inorganic perovskite / crystalline silicon tandem solar cells; 3) Inorganic perovskite / copper indium gallium selenide tandem solar cells.

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