Intermediate infrared filter based on grating gallium nitride HEMTs structure and filtering method thereof
By using a filter based on the grating gallium nitride HEMTs structure in the mid-infrared band, the period width and gate width of the grating electrode layer are adjusted, and the problem of noise signal interference in the mid-infrared band is solved, and efficient signal filtering and information transmission are achieved. optimization.
Patent Information
- Application Number
- CN202411464631.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-21
- Publication Date
- 2025-02-07
AI Technical Summary
In the mid-infrared band, noise signals are easily mixed into useful signals, resulting in interference in information transmission.
A mid-infrared filter based on the grating gallium nitride HEMTs structure is adopted to design a preset transmittance by adjusting the period width and gate width of the grating electrode layer, thereby achieving filtering of the mid-infrared band signal.
Effectively filter out noise signals in the mid-infrared band, allowing useful signals to pass through, thereby reducing interference and improving the quality of information transmission.
Smart Images
Figure CN119395800A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of nano-optical devices, and in particular relates to a mid-infrared filter based on a grating gallium nitride HEMTs structure and a filtering method thereof. Background Art
[0002] With the rapid progress of nanophotonics and the increasing integration of nano-optical devices, optoelectronic digital integrated circuit technology has encountered a series of difficult problems in physical performance tuning and process manufacturing. Specifically, insufficient modulation depth leads to high bit error rate, excessive dynamic power consumption, limited modulation bandwidth, and high tolerance difference in the process manufacturing. In order to solve these technical bottlenecks, the scientific research community continues to explore new device structures, materials and working mechanisms, striving to make breakthroughs in performance, power consumption and speed.
[0003] Filters play a vital role in infrared spectrum detection. As a passive device, they have core functions such as feature frequency selection and noise filtering. For this reason, filters have shown important application value in many fields such as microwave communication, radar technology and microwave measurement, and have received extensive research attention.
[0004] However, in practical applications, since the atmospheric transmission window and the characteristic fundamental frequency reflection bands of many gas molecules are mostly located in the mid-infrared band, the noise signals in this area can easily mix into the useful signals, causing strong interference, which in turn has a negative impact on information transmission. Summary of the invention
[0005] In order to solve the above problems existing in the prior art, the present invention provides a mid-infrared filter based on a grating gallium nitride HEMTs structure and a filtering method thereof. The technical problem to be solved by the present invention is achieved by the following technical solutions:
[0006] A mid-infrared filter based on a grating gallium nitride HEMTs structure comprises: a substrate layer, a buffer layer, a channel layer, a core barrier layer and a grating electrode layer deposited in sequence; the grating electrode layer comprises a nickel electrode layer and a gold electrode layer in sequence; wherein the surface of the gold electrode layer is irradiated with mid-infrared light waves so that the filter has a preset transmittance, and the preset transmittance is determined by the period width of the grating electrode layer and the gate width of the grating electrode layer.
[0007] In a specific embodiment, the height of the grating electrode layer is 50 nm-800 nm, the period width of the grating electrode layer is 0.7 μm-2.8 μm, and the gate width of the grating electrode layer is 0.2 μm-2.4 μm.
[0008] In a specific embodiment, when the period width of the grating electrode layer is 1.4 μm and the gate width of the grating electrode layer is 0.2 μm, the preset transmittance range is 0.04% to 88.43%.
[0009] In a specific embodiment, when the period width of the grating electrode layer is 1.4 μm and the gate width of the grating electrode layer is 0.7 μm, the preset transmittance range is 0.02% to 88.51%.
[0010] In a specific embodiment, when the period width of the grating electrode layer is 0.7 μm and the gate width of the grating electrode layer is 0.6 μm, the preset transmittance range is 0.01% to 82.15%.
[0011] In a specific embodiment, when the period width of the grating electrode layer is 2.8 μm and the gate width of the grating electrode layer is 2.4 μm, the preset transmittance range is 0.01% to 55.76%.
[0012] In a specific embodiment, the thickness of the buffer layer is greater than the thickness of the channel layer.
[0013] In a specific embodiment, the core barrier layer has a thickness of 5-40 nm.
[0014] In a specific embodiment, the materials of the buffer layer and the channel layer are both gallium nitride, so that a phonon polariton effect is excited between the buffer layer and the channel layer and the frequency of exciting the phonon polaritons is 17 THz.
[0015] The present invention also discloses a filtering method of a mid-infrared filter based on a grating gallium nitride HEMTs structure, which uses the above-mentioned mid-infrared filter based on a grating gallium nitride HEMTs structure for filtering, comprising the following steps:
[0016] S1, selecting the period width of the grating electrode layer and the gate width of the grating electrode layer;
[0017] S2, irradiating the surface of the gold electrode layer with mid-infrared light waves to obtain the electric field distribution in the mid-infrared filter of the grating gallium nitride HEMTs structure under the period width of several grating electrode layers and the gate width of the grating electrode layers;
[0018] S3. Obtain device transmittances corresponding to a number of grating period widths and gate widths according to the electric field distribution to filter corresponding mid-band signals.
[0019] Beneficial effects of the present invention:
[0020] 1. The mid-infrared filter based on the grating gallium nitride HEMTs structure of the present invention can filter in the mid-infrared band, filter out interference signals such as noise signals in space, allow part of the waves in the mid-infrared band to pass, and avoid the adverse effects of interference signals on information transmission.
[0021] 2. In the mid-infrared filter based on the grating gallium nitride HEMTs structure of the present invention, the device transmittance can be obtained by designing the grating period width and the gate width. By controlling the grating period width and the gate width, the device transmittance under different incident wave numbers can be adjusted, and high-performance dynamic filtering can be finally achieved.
[0022] 3. In the mid-infrared filter of the present invention, the buffer layer and the channel layer of the grating gallium nitride HEMTs structure can excite the strong coupling effect of phonon polaritons, greatly enhancing the transmittance of the device in a specific band.
[0023] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 It is a schematic diagram of the structure of a mid-infrared filter based on a grating gallium nitride HEMTs structure provided by an embodiment of the present invention;
[0025] Figure 2 It is a schematic flow chart of a filtering method of a mid-infrared filter based on a grating gallium nitride HEMTs structure provided by an embodiment of the present invention;
[0026] Figure 3 A characteristic curve of device transmittance in a mid-infrared filter based on a grating gallium nitride HEMTs structure under different grating period widths and gate widths provided in an embodiment of the present invention. DETAILED DESCRIPTION
[0027] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.
[0028] Embodiment 1
[0029] See also Figure 1 , Figure 1 It is a schematic diagram of the structure of a mid-infrared filter based on a grating gallium nitride HEMTs structure provided by an embodiment of the present invention, comprising: a substrate layer 1, a buffer layer 2, a channel layer 3, a core barrier layer 4 and a grating electrode layer deposited in sequence; the grating electrode layer comprises a nickel electrode layer 5 and a gold electrode layer 6 in sequence; wherein the surface of the gold electrode layer 6 is irradiated with mid-infrared light waves so that the filter has a preset transmittance, and the preset transmittance is determined by the period width of the grating electrode layer and the gate width of the grating electrode layer.
[0030] Specifically, the material of the substrate layer 1 can be silicon. The size of the substrate layer 1 is: 1 μm-200 μm in height. Preferably, the size of the substrate layer 1 is: 1 μm in height.
[0031] The buffer layer 2 is located on the substrate layer 1, and the material can be gallium nitride. The size of the buffer layer 2 is: 0.5 μm-100 μm in height. Preferably, the size of the buffer layer 2 is: 1 μm in height.
[0032] The channel layer 3 is located on the buffer layer 2, and the material can be gallium nitride. The size of the channel layer 3 is: 10nm-500nm in height. Preferably, the size of the channel layer 3 is: 20nm in height.
[0033] The core barrier layer 4 is located on the channel layer 3, and the material can be aluminum nitride. The size of the core barrier layer 4 is: 5-40nm in height. Preferably, the size of the core barrier layer 4 is: 10nm in height.
[0034] The grating electrode layer is located on the core barrier layer 4. The grating electrode layer includes a nickel electrode layer 5 and a gold electrode layer 6 from bottom to top. The light transmittance is adjusted by adjusting the grating period width and gate width in the grating electrode layer, thereby realizing the dynamic adjustment function of the filter.
[0035] Specifically, the height of the grating electrode layer is 50 nm-800 nm, the period width of the grating electrode layer is 0.7 μm-2.8 μm, and the gate width of the grating electrode layer is 0.2 μm-2.4 μm.
[0036] Preferably, when the period width of the grating electrode layer is 1.4 μm and the gate width of the grating electrode layer is 0.2 μm, the preset transmittance range is 0.04% to 88.43%.
[0037] Preferably, when the period width of the grating electrode layer is 1.4 μm and the gate width of the grating electrode layer is 0.7 μm, the preset transmittance range is 0.02% to 88.51%.
[0038] Preferably, when the period width of the grating electrode layer is 0.7 μm and the gate width of the grating electrode layer is 0.6 μm, the preset transmittance range is 0.01% to 82.15%.
[0039] Preferably, when the period width of the grating electrode layer is 2.8 μm and the gate width of the grating electrode layer is 2.4 μm, the preset transmittance range is 0.01% to 55.76%.
[0040] Specifically, the size of the nickel electrode layer 5 is: 25-400 nm in height. Preferably, the size of the nickel electrode layer 5 is: 50 nm in height.
[0041] Specifically, the size of the gold electrode layer 6 is: 25-400 nm in height. Preferably, the size of the gold electrode layer 6 is: 50 nm in height.
[0042] The buffer layer 2 and the channel layer 3 can enhance the strong coupling effect of the electric field inside the device, thereby achieving the ability to improve the filtering range.
[0043] The above-mentioned mid-infrared filter based on the grating gallium nitride HEMTs structure is a planar structure, and its total size is: total height 1.565μm-301.34μm.
[0044] In this embodiment, dynamic filtering is performed through the relationship between the size of the device transmittance and the incident wave number, that is, the final filtering is achieved by controlling the applied voltage to achieve dynamic filtering. In addition, the mid-infrared voltage adjustable filter of this embodiment can filter in the mid-infrared band, filter out interference signals such as noise signals in space, and allow a part of the waves in the mid-infrared band to pass, thereby avoiding the adverse effect of interference signals on information transmission.
[0045] Embodiment 2
[0046] Based on Example 1, see Figure 2 , Figure 2 A flow chart of a filtering method for a mid-infrared filter based on a grating gallium nitride HEMTs structure provided in an embodiment of the present invention, the filtering method uses the filter in Example 1 for filtering. In an example, the dimensions of the mid-infrared filter based on the grating gallium nitride HEMTs structure used in this embodiment are as follows: the height of the substrate layer 1 is 1 μm, the height of the buffer layer 2 is 1 μm, the height of the channel layer 3 is 20 nm, the height of the core barrier layer 4 is 10 nm, the height of the nickel electrode layer 5 is 50 nm, and the height of the gold electrode layer 6 is 50 nm.
[0047] The filtering method comprises the steps of:
[0048] S1, selecting the period width of the grating electrode layer and the gate width of the grating electrode layer;
[0049] S2, irradiating the surface of the gold electrode layer 6 with mid-infrared light waves to obtain the electric field distribution in the mid-infrared filter of the grating gallium nitride HEMTs structure under the period width of several grating electrode layers and the gate width of the grating electrode layers;
[0050] In a specific embodiment, the embodiment of the present invention obtains the relationship between the grating period width, the gate width and the electric field distribution through the following simulation. Specifically, the relationship between the incident frequency and the dielectric constant of gallium nitride is obtained by using MATLAB software, and the dielectric constant of gallium nitride is input into COMSOL software according to the relationship between the incident frequency and the dielectric constant of gallium nitride, and the relationship between the grating period width, the gate width and the electric field distribution in the mid-infrared band is simulated.
[0051] S3. Obtain device transmittances corresponding to a number of grating period widths and gate widths according to the electric field distribution to filter corresponding mid-band signals.
[0052] Specifically, after using COMSOL software to simulate the relationship between the grating period width, gate width and electric field distribution, COMSOL software can calculate the device transmittance through the electric field distribution, thereby obtaining the relationship between the grating period width, gate width and device transmittance. Figure 3 , Figure 3 A characteristic curve of the device transmittance in a mid-infrared filter of a grating period width, a gate width and a grating gallium nitride HEMTs structure provided in an embodiment of the present invention reflects that the device transmittance can be adjusted by changing the grating period width and the gate width to achieve dynamic filtering of the filter. Furthermore, when the grating period width and the gate width are 1.4 μm and 0.2 μm, the transmittance of the device is 0.04% to 88.43%; when the grating period width and the gate width are 1.4 μm and 0.7 μm, the transmittance of the device is 0.02% to 88.51%; when the grating period width and the gate width are 1.4 μm and 1.2 μm, the transmittance of the device is 0.01% to 73.56%; when the grating period width and the gate width are 0.7 μm and 0.6 μm, the transmittance of the device is 0.01% to 82.15%; when the grating period width and the gate width are 2.8 μm and 2.4 μm, the transmittance of the device is 0.01% to 55.76%.
[0053] By obtaining the device transmittance through the above steps, different transmittances can be achieved under different incident frequencies, thereby using the mid-infrared filter with a grating gallium nitride HEMTs structure to filter the mid-band signal.
[0054] Since the device transmittances corresponding to different grating period widths and gate widths are different, the present embodiment can adjust the device transmittances corresponding to the grating period width and the gate width simply by adjusting the grating period width and the gate width, thereby realizing dynamic tunable voltage filtering.
[0055] This embodiment determines the grating period width and gate width of the mid-infrared filter of the grating gallium nitride HEMTs structure to obtain the device transmittance. Output filtering is performed through the range of the device transmittance, so that its maximum filtering range is 0.02% to 88.51%.
[0056] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.
[0057] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.
[0058] Although the present application is described herein in conjunction with various embodiments, in the process of implementing the claimed application, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in a claim. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.
[0059] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.
Claims
1. A mid-infrared filter based on a grating gallium nitride HEMTs structure, characterized in that: include: A substrate layer (1), a buffer layer (2), a channel layer (3), a core barrier layer (4) and a grating electrode layer are deposited in sequence; the grating electrode layer comprises a nickel electrode layer (5) and a gold electrode layer (6) in sequence; wherein the surface of the gold electrode layer (6) is irradiated with mid-infrared light waves so that the filter has a preset transmittance, and the preset transmittance is determined by the period width of the grating electrode layer and the gate width of the grating electrode layer.
2. The mid-infrared filter based on the grating gallium nitride HEMTs structure according to claim 1, characterized in that: The height of the grating electrode layer is 50nm-800nm, the period width of the grating electrode layer is 0.7μm-2.8μm, and the gate width of the grating electrode layer is 0.2μm-2.4μm.
3. The mid-infrared filter based on the grating gallium nitride HEMTs structure according to claim 1, characterized in that: When the period width of the grating electrode layer is 1.4 μm and the gate width of the grating electrode layer is 0.2 μm, the preset transmittance range is 0.04% to 88.43%.
4. The mid-infrared filter based on the grating gallium nitride HEMTs structure according to claim 1, characterized in that: When the period width of the grating electrode layer is 1.4 μm and the gate width of the grating electrode layer is 0.7 μm, the preset transmittance range is 0.02% to 88.51%.
5. The mid-infrared filter based on the grating gallium nitride HEMTs structure according to claim 1, characterized in that: When the period width of the grating electrode layer is 0.7 μm and the gate width of the grating electrode layer is 0.6 μm, the preset transmittance range is 0.01% to 82.15%.
6. The mid-infrared filter based on the grating gallium nitride HEMTs structure according to claim 1, characterized in that: When the period width of the grating electrode layer is 2.8 μm and the gate width of the grating electrode layer is 2.4 μm, the preset transmittance range is 0.01% to 55.76%.
7. The mid-infrared filter based on the grating gallium nitride HEMTs structure according to claim 1, characterized in that: The thickness of the buffer layer (2) is greater than the thickness of the channel layer (3).
8. The mid-infrared filter based on the grating gallium nitride HEMTs structure according to claim 1, characterized in that: The thickness of the core barrier layer (4) is 5-40 nm.
9. The mid-infrared filter based on the grating gallium nitride HEMTs structure according to claim 1, characterized in that: The materials of the buffer layer (2) and the channel layer (3) are both gallium nitride, so that a phonon polariton effect is excited between the buffer layer (2) and the channel layer (3), and the frequency of exciting the phonon polaritons is 17 THz.
10. A filtering method for a mid-infrared filter based on a grating gallium nitride HEMTs structure, characterized in that: The mid-infrared filter based on the grating gallium nitride HEMTs structure as claimed in any one of claims 1 to 9 is used for filtering, comprising the following steps: S1, selecting the period width of the grating electrode layer and the gate width of the grating electrode layer; S2, irradiating the surface of the gold electrode layer (6) with mid-infrared light waves to obtain the electric field distribution in the mid-infrared filter of the grating gallium nitride HEMTs structure under the period width of the grating electrode layers and the gate width of the grating electrode layers; S3. Obtain device transmittances corresponding to a number of grating period widths and gate widths according to the electric field distribution to filter corresponding mid-band signals.