Light-emitting device, preparation method thereof and display substrate

Abstract

The invention relates to a light-emitting device, a preparation method thereof and a display pole plate. The light-emitting device comprises a first electrode, a light-emitting layer and a second electrode which are sequentially stacked. The first electrode comprises a first transparent conductive layer and a second transparent conductive layer which are sequentially stacked in the direction away from the light-emitting layer, multiple metal layers located between the first transparent conductive layer and the second transparent conductive layer, and interval conductive layers located between every two adjacent metal layers. Wherein the activity of the interval conducting layer is lower than that of the metal layer. According to the invention, dark spots of the light-emitting device caused by puncture of the light-emitting layer and the second electrode due to the fact that the metal layer is corroded by corrosive gas to generate large foreign particles can be avoided.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and more particularly to a light emitting device and a method for preparing the same, and a display substrate. Background Art

[0002] OLED (Organic Light-Emitting Diode) display substrates have attracted widespread attention due to their self-luminescence, high brightness, wide viewing angle, high contrast, flexibility, low energy consumption, low driving voltage, high luminous efficiency, and short response time. As a new generation of display products, they have been widely used in the fields of display, lighting, and smart wearables. Summary of the invention

[0003] The present disclosure aims to solve at least one of the technical problems existing in the prior art, and proposes a light-emitting device and a preparation method thereof, and a display substrate.

[0004] In order to achieve the above object, the present disclosure provides a light-emitting device, comprising: a first electrode, a light-emitting layer, and a second electrode stacked in sequence; wherein the first electrode comprises:

[0005] A first transparent conductive layer and a second transparent conductive layer are sequentially stacked and arranged in a direction away from the light-emitting layer;

[0006] a multi-layer metal layer between the first transparent conductive layer and the second transparent conductive layer;

[0007] A spacer conductive layer located between two adjacent metal layers;

[0008] The activity of the spacer conductive layer is lower than that of the metal layer.

[0009] In some embodiments, the thickness of the metal layer closest to the first transparent conductive layer is smaller than the thickness of the other metal layers.

[0010] In some embodiments, the thickness of the metal layer closest to the first transparent conductive layer is greater than 0 and less than or equal to

[0011] In some embodiments, the ratio of the sum of the thicknesses of all the metal layers to the thickness of the first transparent conductive layer is in the range of 10-15.

[0012] In some embodiments, the thickness of the spacer conductive layer is less than the thickness of any one of the metal layers.

[0013] In some embodiments, the material of the first transparent conductive layer and the material of the second transparent conductive layer both include indium tin oxide, the material of the metal layer includes silver, and the material of the spacer conductive layer includes indium tin oxide and at least one of platinum and gold.

[0014] In some embodiments, a surface of the metal layer closest to the first transparent conductive layer facing the first transparent conductive layer has a protrusion;

[0015] The first transparent conductive layer has an opening; at least a portion of the protrusion is located in the opening.

[0016] In some embodiments, the number of the metal layers is 2-5.

[0017] The present disclosure also provides a method for preparing a light emitting device, comprising:

[0018] forming a first electrode;

[0019] forming a light-emitting layer on one side of the first electrode;

[0020] forming a second electrode on a side of the light-emitting layer away from the first electrode;

[0021] The step of forming the first electrode comprises:

[0022] forming a second transparent conductive material layer;

[0023] A plurality of metal material layers are formed on one side of the second transparent conductive material layer, wherein a spacer conductive material layer is formed between two adjacent metal material layers; and the activity of the spacer conductive material layer is lower than that of the metal material layer;

[0024] forming a first transparent conductive material layer on a side of the multi-layer metal material layer away from the second electrode;

[0025] The first transparent conductive material layer, the multi-layer metal material layer, the spacer conductive material layer, and the second transparent conductive material layer are subjected to a patterning process to form a first transparent conductive layer, a multi-layer metal layer, a spacer conductive layer, and a second transparent conductive layer, respectively.

[0026] The present disclosure also provides a display substrate, comprising:

[0027] substrate;

[0028] A pixel circuit and a plurality of light-emitting devices are arranged on the substrate. The light-emitting device is a light-emitting device as described in any one of the above. The light-emitting device is located on a side of the pixel circuit away from the substrate. The first electrode is electrically connected to the pixel circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0030] Figure 1 is a schematic diagram of a cross-sectional structure of a light emitting device in some embodiments;

[0031] Figure 2 is a schematic cross-sectional structure diagram of a light emitting device in some other embodiments;

[0032] Figure 3 is a schematic cross-sectional structure diagram of a first electrode in some embodiments;

[0033] Figure 4 is a schematic diagram of a cross-sectional structure of a first electrode in some embodiments of the present disclosure;

[0034] Figure 5 is a schematic diagram of the cross-sectional structure of the first electrode in some other embodiments of the present disclosure;

[0035] Figure 6 is a schematic diagram of the cross-sectional structure of the first electrode in some other embodiments of the present disclosure;

[0036] Figure 7 is a schematic diagram of the cross-sectional structure of the first electrode in some other embodiments of the present disclosure;

[0037] Figure 8 It is a schematic diagram of the cross-sectional structure of a display substrate in some embodiments of the present disclosure.

[0038] 1. First electrode; 2. Light-emitting layer; 3. Second electrode; 11. First transparent conductive layer; 12. Metal layer; 13. Second transparent conductive layer; 14. Spacer conductive layer; 120. Protrusion; 10. Substrate; 20. Drive circuit layer; 30. Light-emitting device; 21. Thin film transistor; 211. Source; 212. Drain; 213. Active layer; 214. Gate; 22. Storage capacitor; 221. Second electrode; 222. First electrode; 201. First gate insulating layer; 202. Second gate insulating layer; 203. Interlayer dielectric layer; 204. Passivation layer; 205. Planarization layer; 206. Pixel defining layer. DETAILED DESCRIPTION

[0039] The specific implementation of the present disclosure is described in detail below in conjunction with the accompanying drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the present disclosure, and is not used to limit the present disclosure.

[0040] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0041] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not represent any order, quantity or importance, but are only used to distinguish different components. Similarly, "including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0042] As used herein, "parallel" and "perpendicular" include the described situation and the situation similar to the described situation, and the range of the similar situation is within the acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the error associated with the measurement of a specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°.

[0043] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0044] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include deviations in shape due to, for example, manufacturing. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0045] The OLED display substrate includes a substrate and a plurality of light emitting devices located on one side of the substrate. Figure 1 Schematic diagram of the cross-sectional structure of the light-emitting device in some embodiments.

[0046] like Figure 1 As shown, the light emitting device comprises a first electrode 1, a light emitting layer 2 and a first electrode 3 stacked in sequence, wherein the first electrode 1 may be, for example, an anode, and the second electrode 3 may be, for example, a cathode. The light emitting principle of the light emitting device is that under the driving action of the electric field generated by the first electrode 1 and the second electrode 3, carriers are injected into the light emitting layer 2 and recombine in the light emitting layer 2 to generate light.

[0047] Figure 2 Schematic diagram of the cross-sectional structure of the light emitting device in other embodiments. Figure 3 is a schematic diagram of the cross-sectional structure of the first electrode 1 in some embodiments.

[0048] like Figure 2 and Figure 3 As shown, the first electrode 1 includes a first transparent conductive layer 11, a metal layer 12 and a second transparent conductive layer 13 which are stacked in sequence. The materials of the first transparent conductive layer 11 and the second transparent conductive layer 13 both include indium tin oxide (ITO), and the material of the metal layer 12 includes silver (Ag).

[0049] Since the ITO film itself is relatively loose, harmful gases such as acid and alkali in the air can penetrate the first transparent conductive layer 11 into the metal layer 12 and react with Ag, causing Ag to be corroded. Figure 3 As shown, after Ag is corroded, foreign particles containing Ag are generated and the volume expands, and a protrusion 120 is formed on the surface of the metal layer 12 facing the first transparent conductive layer 11 and breaks through the first transparent conductive layer 11. In the case where the protrusion 120 is relatively large, after breaking through the first transparent conductive layer 11, the protrusion 120 will also exceed the first transparent conductive layer 11 in the direction close to the light-emitting layer 2. Furthermore, the protrusion 120 may also damage the light-emitting layer 2, affecting the light-emitting effect of the light-emitting device.

[0050] In other embodiments, the light-emitting layer 2 between the first electrode 1 and the second electrode 3 is multilayered, and adjacent light-emitting layers 2 are connected in series via a charge generation layer (CGL). In this case, the light-emitting device is a stacked series organic light-emitting diode (tandem organic light-emitting diode, Tandem OLED). This Tandem OLED requires a large current when lit. Under the excitation of a large current, the Ag-containing foreign particles may further cause the light-emitting layer 2 and the first electrode 1 to be pierced, thereby causing the Tandem OLED to be short-circuited, and then causing dark spots in the light-emitting device, affecting the light-emitting effect of the light-emitting device. In addition, as the light-emitting device is used, the Ag-containing foreign particles continue to increase, and the light-emitting device continues to age. Therefore, the Ag-containing foreign particles will have a greater impact on the light-emitting effect of the light-emitting device.

[0051] In order to at least alleviate or solve one of the above-mentioned technical problems, the present disclosure provides a light emitting device, a method for preparing the same, and a display substrate.

[0052] Figure 4 is a schematic diagram of the cross-sectional structure of the first electrode in some embodiments of the present disclosure. Figure 5 It is a schematic diagram of the cross-sectional structure of the first electrode in some other embodiments of the present disclosure.

[0053] In some embodiments, Figure 4 and Figure 5 As shown, the present disclosure provides a light-emitting device, comprising: a first electrode 1, a light-emitting layer 2, and a second electrode 3 stacked in sequence. The first electrode 1 comprises: a first transparent conductive layer 11 and a second transparent conductive layer 13 stacked in sequence in a direction away from the light-emitting layer 2, a multi-layer metal layer 12 between the first transparent conductive layer 11 and the second transparent conductive layer 13, and a spacer conductive layer 14 between two adjacent metal layers 12. The activity of the spacer conductive layer 14 is lower than that of the metal layer 12.

[0054] For example, in Figure 4 In the embodiment shown, the metal layer 12 is composed of two layers, and accordingly, a spacer conductive layer 14 is disposed between the two metal layers 12. Figure 5 In the illustrated embodiment, the metal layer 12 is composed of three layers, and a spacer conductive layer 14 is disposed between every two adjacent metal layers 12 , that is, the number of the spacer conductive layers 14 is two.

[0055] As can be seen from the foregoing, corrosive gases can easily penetrate the first transparent conductive layer 11 and enter the metal layer 12 to react with the metal to produce foreign particles. On this basis, the embodiment of the present disclosure separates the metal layer 12 by setting a spacing conductive layer 14, and at the same time makes the activity of the spacing conductive layer 14 lower than the activity of the metal layer 12, that is, the spacing conductive layer 14 does not react with the corrosive gas, or at least reacts slower than the corrosive gas with the metal layer material. The setting of the spacing conductive layer 14 can prevent the corrosive gas from continuing to react downward with the metal layer 12, thereby causing the foreign particles to be too large, thereby ensuring that the light-emitting effect of the light-emitting device is not affected.

[0056] Alternatively, the light emitting device may emit, for example, red light, green light, blue light or white light.

[0057] Optionally, the second electrode 3 may be made of metal, metal alloy, metal nitride, conductive metal oxide, transparent conductive material or the like.

[0058] Optionally, the materials of the first transparent conductive layer 11 and the second transparent conductive layer 13 in the first electrode 1 both include ITO, and the material of the metal layer includes Ag.

[0059] Optionally, the material of the spacer conductive layer 14 may include ITO, or may include a metal with lower activity than Ag, such as platinum (Pt), gold (Au), etc.

[0060] Optionally, the light-emitting layer 2 may include small molecule organic materials or polymer molecule organic materials, may be fluorescent light-emitting materials or phosphorescent light-emitting materials, and may emit red light, green light, blue light, or white light.

[0061] In some embodiments, Figure 4 and Figure 5 As shown, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is smaller than the thickness of other metal layers 12 .

[0062] Specifically, in Figure 4 In the illustrated embodiment, the metal layer 12 includes two layers, and the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is smaller than the thickness D1 of the other metal layer 12 .

[0063] exist Figure 5In the illustrated embodiment, the metal layer 12 is three layers, including: the metal layer 12 closest to the first transparent conductive layer 11, the metal layer 12 farthest from the first transparent conductive layer 11, and another metal layer located between the metal layer 12 closest to the first transparent conductive layer 11 and the metal layer 12 farthest from the first transparent conductive layer 11. The thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is less than the thickness D2 of the metal layer 12 farthest from the first transparent conductive layer 11, and the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is less than the thickness D3 of the other metal layer 12. The thickness D2 of the metal layer 12 farthest from the first transparent conductive layer 11 and the thickness D3 of the other metal layer 12 may be the same or different, and the embodiments of the present disclosure are not limited thereto.

[0064] In the disclosed embodiment, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is smaller than the thickness of other metal layers 12, so that the volume of Ag foreign particles generated by the metal layer 12 closest to the first transparent conductive layer 11 after being corroded by the corrosive gas in the acid-base environment can be reduced as much as possible, so that the foreign particles cannot penetrate the light-emitting layer 2 and the second electrode 3 due to their small volume, thereby reducing the occurrence of dark spots. At the same time, due to the presence of the spacer conductive layer 14, the metal layer 12 of the next layer will not be corroded to produce foreign particles.

[0065] In fact, it can be understood that when preparing the metal layer 12 closest to the first transparent conductive layer 11, the thickness of the metal layer 12 closest to the first transparent conductive layer 11 can be reduced as much as possible to act as a "sacrificial layer" for absorbing acidic and alkaline gases. After the thinner metal layer 12 is corroded, only a trace amount of Ag foreign particles are produced. Therefore, the volume of the Ag foreign particles produced after the metal layer 12 closest to the first transparent conductive layer 11 is corroded by the corrosive gas in the acidic and alkaline environment can be reduced as much as possible, so that the foreign particles cannot pierce the light-emitting layer 2 and the second electrode 3 due to their small volume, thereby reducing the occurrence of dark spots.

[0066] The thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 can be set according to actual needs. The thickness of each film layer in the embodiment of the present disclosure, such as the thickness of the first transparent conductive layer 11, each metal layer 12 and the second transparent conductive layer 13, can be set according to actual needs.

[0067] For example, in some embodiments, Figure 4 and Figure 5 As shown, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is greater than 0 and less than or equal to

[0068] Optionally, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is greater than or equal to and less than or equal to

[0069] Optionally, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is greater than or equal to and less than or equal to

[0070] Optionally, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is greater than or equal to and less than or equal to

[0071] Optionally, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is greater than or equal to and less than or equal to

[0072] Optionally, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is greater than or equal to and less than or equal to

[0073] Optionally, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is greater than or equal to and less than or equal to

[0074] Optionally, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is greater than or equal to and less than or equal to

[0075] Optionally, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is greater than or equal to and less than or equal to

[0076] Specifically, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 can be or

[0077] In the embodiment of the present disclosure, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 is set to be greater than 0 and less than or equal to The volume of Ag foreign particles generated by the metal layer 12 closest to the first transparent conductive layer 11 after being corroded by the corrosive gas in the acid-base environment can be made relatively small, so that the foreign particles cannot pierce the light-emitting layer 2 and the second electrode 3 due to their small volume, thereby reducing the occurrence of dark spots. In consideration of reducing the difficulty of process preparation and reducing costs, the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 can be set to be greater than or equal to and less than or equal to

[0078] In some embodiments, the ratio of the sum of the thicknesses of all metal layers 12 to the thickness of the first transparent conductive layer 11 is in the range of 10-15.

[0079] Optionally, the thickness of the first transparent conductive layer 11 is the same as the thickness of the second transparent conductive layer 13 .

[0080] For example, in Figure 4 In the illustrated embodiment, the ratio of the sum of the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 and the thickness D1 of another metal layer 12 to the thickness of the first transparent conductive layer 11 is in the range of 10-15.

[0081] exist Figure 5 In the illustrated embodiment, the ratio of the sum of the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11, the thickness D2 of the metal layer 12 farthest from the first transparent conductive layer 11 and the thickness D3 of another metal layer 12 to the thickness of the first transparent conductive layer 11 is in the range of 10 to 15.

[0082] Optionally, the ratio of the sum of the thicknesses of all the metal layers 12 to the thickness of the first transparent conductive layer 11 may be in the range of 10, 10.5, 11, 11.5, 12, 12.5, 13, 13.5, 14, 14.5 or 15.

[0083] In some embodiments, Figure 1 As shown, the ratio of the thickness of the metal layer 12 to the thickness of the first transparent conductive layer 11 is in the range of 10-15.

[0084] In some embodiments, the thickness D5 of the spacer conductive layer 14 is less than the thickness of any metal layer 12 .

[0085] For example, in Figure 4 In the illustrated embodiment, the thickness D5 of the spacer conductive layer 14 is smaller than the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11 , and the thickness D5 of the spacer conductive layer 14 is smaller than the thickness D1 of another metal layer 12 .

[0086] exist Figure 5 In the illustrated embodiment, the thickness D5 of the spacer conductive layer 14 is smaller than the thickness D4 of the metal layer 12 closest to the first transparent conductive layer 11, the thickness D5 of the spacer conductive layer 14 is smaller than the thickness D2 of the metal layer 12 farthest from the first transparent conductive layer 11, and the thickness D5 of the spacer conductive layer 14 is smaller than the thickness D3 of another metal layer 12.

[0087] In some embodiments, Figure 4 and Figure 5As shown, the thickness D5 of the spacer conductive layer 14 is less than or equal to the thickness D6 of the first transparent conductive layer.

[0088] In the embodiment of the present disclosure, the thickness of the spacer conductive layer 14 is set to reduce the influence of the spacer conductive layer 14 on the first electrode 1 .

[0089] In some embodiments, the material of the first transparent conductive layer 11 and the material of the second transparent conductive layer 13 both include indium tin oxide, the material of the metal layer 12 includes silver, and the material of the spacer conductive layer 14 includes indium tin oxide and at least one of platinum (Pt) and gold (Au).

[0090] For example, in Figure 4 In the illustrated embodiment, the material of the first transparent conductive layer 11 and the material of the second transparent conductive layer 13 both include indium tin oxide, the material of the metal layer 12 includes silver, and the material of the spacer conductive layer 14 includes indium tin oxide. At this time, the first electrode 1 is formed by interlacing and coating multiple layers of ITO and Ag. Specifically, the film layers of the first electrode 1 include, in a direction away from the light-emitting layer 2, ITO, Ag, ITO, Ag, and ITO in sequence.

[0091] exist Figure 5 In the illustrated embodiment, the material of the first transparent conductive layer 11 and the material of the second transparent conductive layer 13 both include indium tin oxide, the material of the metal layer 12 includes silver, and the material of the spacer conductive layer 14 includes indium tin oxide. At this time, the specific film layers of the first electrode 1 include, in a direction away from the light-emitting layer 2, ITO, Ag, ITO, Ag, and ITO in sequence.

[0092] In the embodiment of the present disclosure, after the spacer conductive layer 14 is set as an ITO film layer, that is, the first electrode 1 has a multi-layer ITO film layer. On this basis, the multi-layer ITO film layer can block the corrosive gas, thereby preventing the corrosive gas from continuing to penetrate downward into the metal layer 12 farther away from the light-emitting layer 2, thereby avoiding the metal layer 12 farther away from the light-emitting layer 2 from being corroded, thereby avoiding the generation of larger foreign particles.

[0093] When metals such as Pt and Au are used to prepare the spacer conductive layer 14, the metal has a high density and can prevent the corrosive gas from further corroding the lower metal layer 12. Therefore, the spacer conductive layer 14 can play a role in isolating the corrosive gas. At the same time, since the activity of metals such as Pt and Au is lower than that of Ag, the spacer conductive layer 14 can also avoid reacting with the corrosive gas to produce foreign particles.

[0094] Figure 6 It is a schematic diagram of the cross-sectional structure of the first electrode in some other embodiments of the present disclosure. Figure 7 It is a schematic diagram of the cross-sectional structure of the first electrode in some other embodiments of the present disclosure.

[0095] In some embodiments, Figure 6 and Figure 7 As shown, the surface of the metal layer 12 closest to the first transparent conductive layer 11 facing the first transparent conductive layer 11 has at least one protrusion 120; the first transparent conductive layer 11 has at least one opening; the orthographic projection of the opening on the second transparent conductive layer 13 at least partially overlaps with the orthographic projection of the protrusion on the second transparent conductive layer 13. At least part of the protrusion 120 is located in the opening.

[0096] Figure 6 The embodiment shown is actually Figure 4 The cross-sectional structure diagram of the embodiment shown is that the metal layer 12 closest to the first transparent conductive layer 11 is corroded to produce foreign particles containing Ag. That is, Figure 4 In the embodiment shown, the metal layer 12 closest to the first transparent conductive layer 11 is corroded to generate foreign particles containing Ag to form a protrusion 120, which breaks through the first transparent conductive layer 11 to form an opening in the first transparent conductive layer 11, that is, Figure 6 Schematic diagram of the cross-section structure shown.

[0097] Figure 7 The embodiment shown is actually Figure 5 The cross-sectional structure diagram of the embodiment shown is that the metal layer 12 closest to the first transparent conductive layer 11 is corroded to produce Ag-containing foreign particles. Figure 5 In the embodiment shown, the metal layer 12 closest to the first transparent conductive layer 11 is corroded to generate foreign particles containing Ag to form a protrusion 120, which breaks through the first transparent conductive layer 11 to form an opening in the first transparent conductive layer 11, that is, Figure 6 Schematic diagram of the cross-section structure shown.

[0098] In the embodiment of the present disclosure, since the thickness of the metal layer 12 closest to the first transparent conductive layer 11 is relatively small, the foreign particles generated by the reaction between the metal layer 12 close to the first transparent conductive layer 11 and the corrosive gas are relatively small. Therefore, the protrusions will not puncture the light-emitting layer 2 and the second electrode 3, thereby avoiding the generation of dark spots.

[0099] In some embodiments, the number of metal layers 12 is 2 to 5. For example, the number of metal layers 12 may be 2, 3, 4 or 5.

[0100] For example, Figure 4 In the illustrated embodiment, the number of metal layers 12 is two. Figure 5 In the illustrated embodiment, the number of metal layers 12 is three.

[0101] Optionally, the orthographic projections of the various film layers in the first electrode 1 on the plane where the second transparent conductive layer 13 is located are roughly overlapped, that is, the various film layers in the first electrode 1 can be formed by the same patterning process. Specifically, the first transparent conductive layer 11, the metal layer 12, the spacer conductive layer 14 and the second transparent conductive layer 13 can be formed by the same patterning process.

[0102] The embodiment of the present disclosure does not limit the number of metal layers 12 , but in order to reduce the difficulty of the manufacturing process and reduce the manufacturing cost, the embodiment of the present disclosure sets the number of metal layers 12 within the range of 2 to 5.

[0103] In some embodiments, the present disclosure further provides a method for preparing a light-emitting device. The preparation method includes steps S01 to S03:

[0104] Step S01, forming a first electrode 1.

[0105] Step S02 : forming a light-emitting layer 2 on one side of the first electrode 1 .

[0106] Step S03 , forming a second electrode 3 on a side of the light-emitting layer 2 away from the first electrode 1 .

[0107] The step of forming the first electrode 1 includes steps S10 to S40:

[0108] Step S10: forming a second transparent conductive material layer.

[0109] Step S20, forming a plurality of metal material layers on one side of the second transparent conductive material layer, and forming a spacer conductive material layer between two adjacent metal material layers; wherein the activity of the spacer conductive material layer is lower than that of the metal material layer.

[0110] Step S30, forming a first transparent conductive material layer on a side of the multi-layer metal material layer away from the second electrode 3;

[0111] Step S40, patterning the first transparent conductive material layer, the multi-layer metal material layer, the spacer conductive material layer, and the second transparent conductive material layer to form a first transparent conductive layer 11, a multi-layer metal layer 12, a spacer conductive layer 14, and a second transparent conductive layer 13, respectively, to obtain a light-emitting device.

[0112] In some embodiments, the specific steps of step S20 include steps S21 to S23:

[0113] Step S21 : forming a metal material layer on one side of the second transparent conductive material layer.

[0114] Step S22 , forming a spacer conductive material layer on a side of the metal material layer away from the second transparent conductive material layer.

[0115] Step S23 , forming another metal material layer on a side of the spacing conductive material layer away from the second transparent conductive material layer.

[0116] At this time, the number of metal material layers is 2. After completing step S23, step S30 and step S40 are performed to obtain Figure 4 The light emitting device shown.

[0117] In some other embodiments, step S20, in addition to steps S21 to S23, further includes:

[0118] Step S24, repeating steps S22 and S23 until the number of metal material layers reaches a set value.

[0119] When step S24 is completed and steps S22 and S23 are repeated only once, the number of metal material layers is 3. In this case, steps S30 and S40 are performed again, and then Figure 5 The light emitting device shown.

[0120] In some embodiments, the present disclosure also provides a display substrate. Figure 8 Schematic diagram of the cross-sectional structure of the display substrate in some embodiments of the present disclosure. Figure 8 As shown, the display substrate in the embodiment of the present disclosure includes a substrate 10, a pixel circuit and a plurality of light-emitting devices 30 arranged on the substrate 10. The light-emitting device 30 is a light-emitting device as described in any embodiment of the present disclosure, wherein the light-emitting device 30 is located on a side of the pixel circuit away from the substrate 10, and the first electrode 1 is electrically connected to the pixel circuit.

[0121] Optionally, the substrate 10 is a glass substrate. For example, the glass substrate can be at least one of alkali-free glass, alkali glass, aluminum oxide glass, high borosilicate glass and quartz glass. Alternatively, optionally, the substrate 10 can also be a flexible substrate.

[0122] Alternatively, if Figure 8 As shown, the display substrate further includes a driving circuit layer 20 located between the substrate 10 and the light-emitting device 30. The driving circuit layer 20 includes a first gate insulating layer 201, a second gate insulating layer 202, an interlayer dielectric layer 203, a passivation layer 204, and a planarization layer 206, which are located on one side of the substrate 10 and are sequentially stacked in a direction away from the substrate 10.

[0123] The driving circuit layer 20 further includes a pixel circuit. The first electrode 1 is electrically connected to the pixel circuit. The pixel circuit provides a driving signal to the thin film transistor 21.

[0124] Specifically, Figure 8 As shown, the pixel circuit includes a thin film transistor 21 and a storage capacitor 22 .

[0125] The thin film transistor 21 includes a gate 214, a source 211, a drain 212 and an active layer 213. The gate 214 is located between the first gate insulating layer 201 and the second gate insulating layer 202. The active layer 213 is located between the substrate 10 and the first gate insulating layer 201, and the source 211 and the drain 212 are located between the second gate insulating layer 202 and the interlayer dielectric layer 203. The active layer 213 includes a channel portion and a source 211 connecting portion and a drain 212 connecting portion located on both sides of the channel portion, the source 211 connecting portion is electrically connected to the source 211 of the thin film transistor 21, and the drain 212 connecting portion is electrically connected to the drain 212 of the thin film transistor 21. The source 211 connecting portion and the drain 212 connecting portion may be doped with impurities (for example, N-type impurities or P-type impurities) with a higher impurity concentration than that of the channel portion. The channel portion is directly opposite to the gate electrode 214 of the thin film transistor 21. When the voltage signal loaded on the gate electrode 214 reaches a certain value, a carrier path is formed in the channel portion to conduct the drain electrode 212 and the source electrode 211 of the thin film transistor 21. The first electrode 1 is electrically connected to the drain electrode 212 of the thin film transistor 21 through a via hole penetrating the planarization layer 205 and the passivation layer 204.

[0126] The storage capacitor 22 includes a first plate 222 and a second plate 221 . The first plate 222 is disposed in the same layer as the gate 214 , and the second plate 221 is located between the second gate insulating layer 202 and the interlayer dielectric layer 203 .

[0127] Optionally, the first gate insulating layer 201, the second gate insulating layer 202 and the interlayer dielectric layer 203 can all be a single-layer structure, or a multi-layer structure stacked along the thickness direction of the display panel, and each layer can be prepared using any one or more combinations of silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON).

[0128] Optionally, the material of the passivation layer 204 may include a silicon compound, for example, at least one of silicon oxide, silicon nitride, or silicon oxynitride.

[0129] Optionally, the planarization layer 205 is made of an organic insulating material. For example, the organic insulating material may include one or more resin materials such as polyimide, epoxy resin, acrylic, polyester, photoresist, polyacrylate, polyamide, siloxane, etc. For example, the organic insulating material may also be elastic, for example, the organic insulating material may include one or more elastic materials such as urethane, thermoplastic polyurethane (TPU), etc.

[0130] Optionally, the material of the pixel defining layer 206 may include one or more organic insulating materials such as polyimide, polyphthalimide, polyphthalamide, acrylic resin, benzocyclobutene or phenolic resin.

[0131] In one example, in a method for preparing a light-emitting device 30 disclosed in the present invention, forming the first electrode 1 in step S01 specifically involves forming the first electrode 1 on a side of the planarization layer 205 away from the substrate 10, and forming the light-emitting layer 2 on one side of the first electrode 1 in step S02 specifically involves forming the light-emitting layer 2 on a side of the first electrode 1 away from the substrate 10.

[0132] Furthermore, in the step of forming the first electrode 1, forming the second transparent conductive material layer in step S10 specifically involves forming the second transparent conductive material layer on the side of the planarization layer 205 away from the substrate 10, and forming the multi-layer metal material layer on one side of the second transparent conductive material layer in step S20 specifically involves forming the multi-layer metal material layer on the side of the second transparent conductive material layer away from the substrate 10.

[0133] Alternatively, if Figure 8 As shown, the layer where the first electrode 1 is located is located on the side of the layer where the pixel defining layer 206 is located close to the substrate 10. The layer where the light emitting layer 2 is located is located on the side of the layer where the pixel defining layer 206 is located away from the substrate 10. The pixel defining layer 206 defines a pixel opening, and at least part of the light emitting device 30 is located in the pixel opening. For example, part of the first electrode 1 is located in the pixel opening, the light emitting layer 2 is located in the pixel opening, part of the second electrode 3 is located in the pixel opening, and another part of the second electrode 3 is located on the side of the pixel defining layer 206 away from the substrate 10.

[0134] The present disclosure also provides a display device. The display device includes the display substrate described in the embodiment of the present disclosure. Specifically, the display device may include any device or product with a display function. For example, the display device may be a smart phone, a mobile phone, an e-book reader, a desktop computer (PC), a laptop PC, a netbook PC, a personal digital assistant (PDA), a portable multimedia player (PMP), a digital audio player, a mobile medical device, a camera, a wearable device (such as a head-mounted device, an electronic clothing, an electronic bracelet, an electronic necklace, an electronic accessory, an electronic tattoo, or a smart watch), a television, etc.

[0135] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present disclosure, but the present disclosure is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and substance of the present disclosure, and these modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. A light emitting device, characterized in that: include: A first electrode, a light-emitting layer, and a second electrode are stacked in sequence; wherein the first electrode comprises: A first transparent conductive layer and a second transparent conductive layer are sequentially stacked and arranged in a direction away from the light-emitting layer; a multi-layer metal layer between the first transparent conductive layer and the second transparent conductive layer; A spacer conductive layer located between two adjacent metal layers; The activity of the spacer conductive layer is lower than that of the metal layer.

2. The light emitting device according to claim 1, characterized in that: The thickness of the metal layer closest to the first transparent conductive layer is smaller than the thickness of the other metal layers.

3. The light emitting device according to claim 1, characterized in that: The thickness of the metal layer closest to the first transparent conductive layer is greater than 0 and less than or equal to 4. The light emitting device according to any one of claims 1 to 3, characterized in that: The ratio of the sum of the thicknesses of all the metal layers to the thickness of the first transparent conductive layer is in the range of 10-15.

5. The light emitting device according to any one of claims 1 to 3, characterized in that: The thickness of the spacer conductive layer is smaller than the thickness of any one of the metal layers.

6. The light emitting device according to any one of claims 1 to 3, characterized in that: The material of the first transparent conductive layer and the material of the second transparent conductive layer both include indium tin oxide, the material of the metal layer includes silver, and the material of the spacer conductive layer includes indium tin oxide and at least one of platinum and gold.

7. The light emitting device according to any one of claims 1 to 3, characterized in that: The surface of the metal layer closest to the first transparent conductive layer facing the first transparent conductive layer has a protrusion; The first transparent conductive layer has an opening; at least a portion of the protrusion is located in the opening.

8. The light emitting device according to any one of claims 1 to 3, characterized in that: The number of the metal layers is 2 to 5.

9. A method for preparing a light emitting device, characterized in that: include forming a first electrode; forming a light-emitting layer on one side of the first electrode; forming a second electrode on a side of the light-emitting layer away from the first electrode; The step of forming the first electrode comprises: forming a second transparent conductive material layer; A plurality of metal material layers are formed on one side of the second transparent conductive material layer, wherein a spacer conductive material layer is formed between two adjacent metal material layers; and the activity of the spacer conductive material layer is lower than that of the metal material layer; forming a first transparent conductive material layer on a side of the multi-layer metal material layer away from the second electrode; The first transparent conductive material layer, the multi-layer metal material layer, the spacer conductive material layer, and the second transparent conductive material layer are subjected to a patterning process to form a first transparent conductive layer, a multi-layer metal layer, a spacer conductive layer, and a second transparent conductive layer, respectively.

10. A display substrate, characterized in that: include: substrate; A pixel circuit and a plurality of light-emitting devices are arranged on the substrate, wherein the light-emitting device is a light-emitting device as described in any one of claims 1 to 9, and the light-emitting device is located on a side of the pixel circuit away from the substrate, and the first electrode is electrically connected to the pixel circuit.

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