Display panel, manufacturing method thereof and display device

Abstract

The invention provides a display panel, a manufacturing method thereof and a display device. The display panel includes: a substrate; a first encapsulation layer on the substrate; the packaging buffer layer is arranged on one side, far away from the substrate, of the first packaging layer, and the packaging buffer layer comprises a light extraction structure; and a second encapsulation layer on a side of the encapsulation buffer layer away from the first encapsulation layer. In the invention, the light extraction structure is arranged in the packaging layer, so that the implementation is relatively easy.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] Organic Light-Emitting Diode (OLED), which is a self-luminous device, has attracted widespread attention as a flat panel display device.

[0003] With the development of display technology, flexible display devices have the characteristics of being rollable, wide viewing angle and easy to carry. In related technologies, due to substrate mode, waveguide mode, organic layer absorption and other reasons, the EQE (External Quantum Efficiency) of OLED devices is difficult to exceed 30%, so the light extraction structure is an important research direction. In related technologies, the light extraction structure is set in the anode layer, etc., which makes the light extraction structure more complicated and not easy to implement. Summary of the invention

[0004] A technical problem solved by the present disclosure is that in the related art, the light extraction structure is not easy to implement.

[0005] According to one aspect of the present disclosure, a display panel is provided, comprising: a substrate; a first encapsulation layer on the substrate; an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate, wherein the encapsulation buffer layer comprises a light extraction structure; and a second encapsulation layer on a side of the encapsulation buffer layer away from the first encapsulation layer.

[0006] In some embodiments, the encapsulation buffer layer further includes a main body layer on a side of the first encapsulation layer away from the substrate, and the light extraction structure is located between the main body layer and the second encapsulation layer.

[0007] In some embodiments, the substrate includes a transistor layer and a sub-pixel layer on the transistor layer, the sub-pixel layer includes a plurality of sub-pixels; the orthographic projection of the light extraction structure on the transistor layer at least partially overlaps with the orthographic projection of the plurality of sub-pixels on the transistor layer.

[0008] In some embodiments, the light extraction structure comprises a grating structure.

[0009] In some embodiments, the grating structure includes a plurality of sub-grating structures, the plurality of sub-grating structures include at least a portion of sub-grating structures, and the structural parameters of the at least a portion of the sub-grating structures are different from each other.

[0010] In some embodiments, the substrate includes a transistor layer and a sub-pixel layer on the transistor layer, the sub-pixel layer includes a plurality of sub-pixels, and the plurality of sub-pixels include red sub-pixels, green sub-pixels, and blue sub-pixels; the at least a portion of the sub-grating structure includes a first sub-grating structure, a second sub-grating structure, and a third sub-grating structure, wherein an orthographic projection of the first sub-grating structure on the transistor layer at least partially overlaps with an orthographic projection of the red sub-pixel on the transistor layer, an orthographic projection of the second sub-grating structure on the transistor layer at least partially overlaps with an orthographic projection of the green sub-pixel on the transistor layer, and an orthographic projection of the third sub-grating structure on the transistor layer at least partially overlaps with an orthographic projection of the blue sub-pixel on the transistor layer, and structural parameters of the first sub-grating structure, the second sub-grating structure, and the third sub-grating structure are different from each other.

[0011] In some embodiments, the grating structure includes a plurality of sub-grating structures, and the structural parameters of the plurality of sub-grating structures are the same.

[0012] In some embodiments, each sub-grating structure includes a plurality of strip-shaped components; the structural parameters of each sub-grating structure include: the spacing between adjacent strip-shaped components in the plurality of strip-shaped components, and / or the height of each strip-shaped component in the plurality of strip-shaped components.

[0013] In some embodiments, the intervals between adjacent strip-shaped components in the plurality of strip-shaped components range from 5 nanometers to 50 nanometers; and the height of each strip-shaped component ranges from 10 nanometers to 50 nanometers.

[0014] In some embodiments, the encapsulation buffer layer further includes a filling layer, a portion of which fills the gaps in the main layer, and another portion of the filling layer is located on a surface of the main layer away from the first encapsulation layer.

[0015] In some embodiments, the material of the filling layer includes metal oxide or silicon oxide.

[0016] In some embodiments, the material of the light extraction structure is different from the material of the filling layer; and the filling layer surrounds the light extraction structure.

[0017] In some embodiments, the material of the light extraction structure is the same as that of the filling layer; and the light extraction structure is located on a side of the filling layer away from the first encapsulation layer.

[0018] In some embodiments, the light extraction structure includes a scattering structure.

[0019] In some embodiments, the shape of the scattering structure includes at least one of a triangle, a cylinder, and an ellipse.

[0020] According to another aspect of the present disclosure, a display device is provided, comprising: the display panel as described above.

[0021] According to another aspect of the present disclosure, a method for manufacturing a display panel is provided, comprising: forming a first encapsulation layer on a substrate; forming an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate, wherein the encapsulation buffer layer includes a light extraction structure; and forming a second encapsulation layer on a side of the encapsulation buffer layer away from the first encapsulation layer.

[0022] In some embodiments, forming an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate includes: forming a main layer on a side of the first encapsulation layer away from the substrate; and performing plasma treatment or surfactant treatment on the main layer to form the light extraction structure.

[0023] In some embodiments, the plasma treatment includes plasma treatment performed using fluorine plasma.

[0024] In some embodiments, forming an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate includes: forming a main layer on a side of the first encapsulation layer away from the substrate; and using a mask to form the light extraction structure on the main layer through a deposition process, wherein the light extraction structure includes a grating structure.

[0025] In some embodiments, forming an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate further comprises: forming a filling layer on a side of the main layer away from the first encapsulation layer, a portion of the filling layer filling the gaps in the main layer.

[0026] In some embodiments, forming a filling layer on a side of the main layer away from the first encapsulation layer includes alternately performing the following operations to form the filling layer on the main layer: introducing a first precursor gas into a cavity in which the main layer is placed, performing a first pressure-holding treatment for a first predetermined period of time, and after the first pressure-holding treatment, opening the cavity to perform a cleaning treatment; and introducing a second precursor gas into the cavity, performing a second pressure-holding treatment for a second predetermined period of time, and after the second pressure-holding treatment, opening the cavity to perform a cleaning treatment.

[0027] In some embodiments, forming an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate includes: forming a main layer on a side of the first encapsulation layer away from the substrate; forming a filling layer on a side of the main layer away from the first encapsulation layer, a portion of the filling layer filling the gaps in the main layer; and performing plasma treatment or surfactant treatment on the filling layer to form the light extraction structure.

[0028] In some embodiments, forming an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate includes: forming a main layer on a side of the first encapsulation layer away from the substrate; forming a filling layer on a side of the main layer away from the first encapsulation layer, a portion of the filling layer fills the gaps in the main layer; and using a mask template to form the light extraction structure on the filling layer through a deposition process, the light extraction structure including a grating structure.

[0029] In the above display panel, the light extraction structure is arranged in the encapsulation buffer layer, which is relatively easy to implement.

[0030] Other features and advantages of the present disclosure will become apparent from the following detailed description of exemplary embodiments of the present disclosure with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying drawings, which constitute a part of the specification, illustrate embodiments of the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0032] The present disclosure may be more clearly understood from the following detailed description with reference to the accompanying drawings, in which:

[0033] Figure 1 is a schematic cross-sectional view showing a display panel according to an embodiment of the present disclosure;

[0034] Figure 2 is a schematic diagram showing a light extraction process of a display panel according to an embodiment of the present disclosure;

[0035] Figure 3 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure;

[0036] Figure 4 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure;

[0037] Figure 5 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure;

[0038] Figure 6 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure;

[0039] Figure 7 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure;

[0040] Figure 8 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure;

[0041] Fig. 9is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure;

[0042] Fig.10 is a flow chart showing a method for manufacturing a display panel according to an embodiment of the present disclosure;

[0043] FIG. 11A to FIG. 11C is a cross-sectional schematic diagram showing the structure of several stages in a manufacturing process of a display panel according to some embodiments of the present disclosure;

[0044] FIG. 12A to FIG. 12C is a schematic cross-sectional view showing structures at several stages in a manufacturing process of a display panel according to other embodiments of the present disclosure;

[0045] FIG. 13A to FIG. 13C is a schematic cross-sectional view showing structures at several stages in a manufacturing process of a display panel according to other embodiments of the present disclosure;

[0046] FIG. 14A to FIG. 14C is a schematic cross-sectional view showing structures at several stages in a manufacturing process of a display panel according to other embodiments of the present disclosure;

[0047] FIG. 15A to FIG. 15C is a schematic cross-sectional view showing structures at several stages in a manufacturing process of a display panel according to other embodiments of the present disclosure;

[0048] Fig.16 is a schematic diagram showing a process of forming a filling layer according to an embodiment of the present disclosure;

[0049] Fig.17 is a schematic diagram showing a mechanism of forming a filling layer according to some embodiments of the present disclosure;

[0050] Fig.18 is a result diagram showing the water contact angle of the encapsulation buffer layer after the bulk layer of the encapsulation buffer layer is subjected to plasma treatment under different process conditions according to some embodiments of the present disclosure;

[0051] Fig.19 is a diagram showing the roughness result of the encapsulation buffer layer after the main layer of the encapsulation buffer layer is subjected to plasma treatment under different process conditions according to some embodiments of the present disclosure;

[0052] Fig. 20 3 is a surface morphology diagram of the encapsulation buffer layer after the main layer of the encapsulation buffer layer is subjected to plasma treatment under different process conditions according to some embodiments of the present disclosure.

[0053] It should be understood that the size of each part shown in the accompanying drawings is not drawn according to the actual proportional relationship. In addition, the same or similar reference numerals represent the same or similar components. DETAILED DESCRIPTION

[0054] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. The description of the exemplary embodiments is merely illustrative and is in no way intended to limit the present disclosure and its application or use. The present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. These embodiments are provided to make the present disclosure thorough and complete and to fully express the scope of the present disclosure to those skilled in the art. It should be noted that unless otherwise specifically stated, the relative arrangement of the components and steps, the composition of the materials, the numerical expressions and the numerical values ​​set forth in these embodiments should be interpreted as being merely exemplary and not as limiting.

[0055] The words "first", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different parts. The words "include" or "comprise" and similar words mean that the elements before the word include the elements listed after the word, and do not exclude the possibility of including other elements. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0056] In the present disclosure, when a specific device is described as being located between a first device and a second device, there may or may not be an intermediate device between the specific device and the first device or the second device. When a specific device is described as being connected to other devices, the specific device may be directly connected to the other device without an intermediate device, or may not be directly connected to the other device but have an intermediate device.

[0057] All terms (including technical terms or scientific terms) used in the present disclosure have the same meanings as those understood by ordinary technicians in the field to which the present disclosure belongs, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries, such as general dictionaries, should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an idealized or extremely formal sense, unless explicitly defined herein.

[0058] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered as part of the specification.

[0059] Figure 1 is a schematic cross-sectional view showing a display panel according to an embodiment of the present disclosure.

[0060] like Figure 1As shown, the display panel includes a substrate 10. For example, the substrate is a flexible substrate. In some embodiments, the substrate 10 includes a transistor layer and a sub-pixel layer on the transistor layer, and the sub-pixel layer includes a plurality of sub-pixels. For example, the transistor layer includes: a substrate substrate, a substrate buffer layer, an active layer, a gate insulating layer, and a dielectric layer. The sub-pixel layer includes: a first electrode layer (e.g., an anode layer), a pixel defining layer, a light-emitting functional layer (e.g., an organic light-emitting layer), and a second electrode layer (e.g., a cathode layer). The substrate 10 may also include a doped region.

[0061] like Figure 1 As shown, the display panel further includes a first encapsulation layer 20 on the substrate 10. For example, the material of the first encapsulation layer 20 includes at least one of silicon nitride and silicon oxynitride. The first encapsulation layer acts as a first barrier layer and can block water and oxygen. This can reduce the adverse effects of water and oxygen on the display panel.

[0062] like Figure 1 As shown, the display panel further includes an encapsulation buffer layer 30 on the side of the first encapsulation layer 20 away from the substrate 10. The encapsulation buffer layer 30 includes a light extraction structure 31. For example, the material of the encapsulation buffer layer 30 includes at least one of acrylic and silicon carbonitride. The light extraction structure can improve the light extraction effect of the display panel.

[0063] like Figure 1 As shown, the display panel further includes a second encapsulation layer 40 on the side of the encapsulation buffer layer 30 away from the first encapsulation layer 20. For example, the material of the second encapsulation layer 40 includes at least one of silicon nitride, silicon oxynitride and aluminum oxide. The second encapsulation layer 40 acts as a second barrier layer to block water and oxygen. This can reduce the adverse effects of water and oxygen on the display panel.

[0064] In this embodiment, the first encapsulation layer, the encapsulation buffer layer and the second encapsulation layer together serve as an encapsulation layer of the display panel. Since the light extraction structure is arranged in the encapsulation layer, it is relatively easy to implement.

[0065] So far, a display panel according to some embodiments of the present disclosure is provided. The display panel includes: a substrate; a first encapsulation layer on the substrate; an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate, wherein the encapsulation buffer layer includes a light extraction structure; and a second encapsulation layer on a side of the encapsulation buffer layer away from the first encapsulation layer. In this embodiment, the light extraction structure is provided in the encapsulation buffer layer, which is relatively easy to implement.

[0066] The light extraction structure has flexible light field control capabilities, which can effectively reduce light reflection and improve the light extraction efficiency of the display panel.

[0067] In terms of mechanical properties, the light extraction structure, as a micro-nano structure, can reduce the strain and stress of the display panel bending. The micro-nano structure reduces stress concentration and slows down the propagation of cracks. In addition, the cross-linking of the encapsulation buffer layer is stronger, the surface is denser, the hardness is increased, and the residual stress can be released.

[0068] like Figure 1 As shown, the encapsulation buffer layer further includes a main body layer 32 on the side of the first encapsulation layer 20 away from the substrate 10 . The light extraction structure 31 is located between the main body layer 32 and the second encapsulation layer 40 .

[0069] In some embodiments, the light extraction structure 31 includes a scattering structure 312. For example, the shape of the scattering structure 312 includes at least one of a triangle, a cylinder, and an ellipse. Figure 1 As shown, the scattering structure 312 is in the shape of a triangle. The layer where the scattering structure 312 is located can be called a random scattering layer.

[0070] Figure 2 FIG. 4 is a schematic diagram showing a light extraction process of a display panel according to an embodiment of the present disclosure.

[0071] Figure 2 5 shows photons 501 generated in the substrate 10. Those skilled in the art will appreciate that although Figure 2 FIG. 5 shows one photon 501, but in reality, the substrate generates multiple photons. These photons can be transmitted in the form of optical transmission paths R1, R2, R3 and R4. Figure 2 As shown, some photons reach the light extraction structure of the encapsulation buffer layer 30 along the light transmission paths R1 and R3, and are emitted through the light extraction structure, and some photons reach the flat surface of the encapsulation buffer layer 30 along the light transmission paths R2 and R4, wherein the photons transmitted along the light transmission path R2 are emitted from the flat surface, while the photons transmitted along the light transmission path R4 are totally reflected by the flat surface and cannot be emitted from the flat surface. Therefore, it can be seen that providing a light extraction structure in the encapsulation buffer layer 30 can improve the light extraction efficiency of the display panel, thereby improving the display effect of the display panel.

[0072] Figure 3 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure.

[0073] like Figure 3 As shown, the display panel includes a substrate 10 , a first encapsulation layer 20 , an encapsulation buffer layer 30 and a second encapsulation layer 40 .

[0074] For example, Figure 3As shown, the substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11. The sub-pixel layer 12 includes a plurality of sub-pixels. In some embodiments, the orthographic projection of the light extraction structure 31 on the transistor layer 11 at least partially overlaps with the orthographic projection of the plurality of sub-pixels on the transistor layer 11.

[0075] The encapsulation buffer layer 30 includes a light extraction structure 31 and a main layer 32. Figure 3 As shown, the main body layer 32 of the encapsulation buffer layer 30 includes a gap 322. For example, the gap 322 can be connected to the surface of the main body layer. It should be noted that, Figure 3 The voids 322 shown in the figure as not connected to the surface of the main body layer are only those not connected to the surface of the main body layer in the current cross-sectional view. In fact, these voids are also connected to the surface of the main body layer in other cross-sectional views or parts.

[0076] In some embodiments, Figure 3 As shown, the encapsulation buffer layer 30 further includes a filling layer 33. A portion 331 of the filling layer 33 is filled in the gap 322 of the main body layer 32, and another portion 332 of the filling layer 33 is located on the surface of the main body layer 32 away from the first encapsulation layer 20. For example, the material of the filling layer 33 includes metal oxide or silicon oxide, etc. For example, the metal oxide includes aluminum oxide (Al2O3) and the like.

[0077] The filling layer 33 can reduce the surface polarity, inhibit the formation of hydrogen bonds, and combine with the oxygen in the encapsulation buffer layer, thereby slowing down the diffusion of water vapor and improving the barrier performance of the encapsulation. Therefore, the filling layer 33 can serve as a barrier layer to block water and oxygen. This can further reduce the adverse effects of water and oxygen on the display panel.

[0078] In some embodiments, the material of the light extraction structure is different from the material of the filling layer. For example, the material of the light extraction structure 31 is the same as the material of the main layer 32. For example, the material of the main layer 32 includes: at least one of acrylic and silicon carbonitride, etc. Therefore, the material of the light extraction structure 31 also includes: at least one of acrylic and silicon carbonitride, etc. The material of the filling layer 33 includes metal oxide or silicon oxide, etc. Therefore, the material of the light extraction structure is different from the material of the filling layer. Figure 3 As shown, the filling layer 33 surrounds the light extraction structure 31 .

[0079] Figure 4 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure.

[0080] and Figure 3 The display panel shown is similar to Figure 4The display panel shown includes a substrate 10, a first encapsulation layer 20, an encapsulation buffer layer 30 and a second encapsulation layer 40, wherein the encapsulation buffer layer 30 includes a light extraction structure 31, a main layer 32 and a filling layer 33. Figure 3 Compared to the display panel shown, the Figure 4 The difference of the display panel shown is that the shape of the light extraction structure 31 is curved. In some embodiments, the shape of the light extraction structure 31 is elliptical.

[0081] In the above embodiment, the light extraction structure is arranged in the encapsulation buffer layer, which is relatively easy to implement. The light extraction structure can improve the light extraction efficiency of the display panel, thereby improving the display effect of the display panel. In addition, the filling layer in the encapsulation buffer layer can play a role in blocking water and oxygen, thereby further reducing the adverse effects of water and oxygen on the display panel.

[0082] Figure 5 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure.

[0083] and Figure 3 The display panel shown is similar to Figure 5 The display panel shown includes a substrate 10 , a first encapsulation layer 20 , an encapsulation buffer layer 30 and a second encapsulation layer 40 , wherein the encapsulation buffer layer 30 includes a light extraction structure 31 , a main layer 32 and a filling layer 33 .

[0084] like Figure 5 As described above, the substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11 .

[0085] like Figure 5 As shown, the sub-pixel layer 12 includes a pixel defining layer 121. The pixel defining layer 121 has an opening 1212. The sub-pixel layer 12 also includes a light-emitting functional layer 122 at least located in the opening 1212 of the pixel defining layer. The sub-pixel layer 12 also includes an electrode layer (e.g., a cathode layer) 123 covering the pixel defining layer 121 and the light-emitting functional layer 122. Of course, those skilled in the art will appreciate that the sub-pixel layer may also include other structural layers, and therefore, the scope of the present disclosure is not limited thereto.

[0086] Here, the light-emitting functional layer in each opening is used to emit light, thereby forming a sub-pixel. Figure 5As shown, the orthographic projection of a part of the light extraction structure 31 on the transistor layer 11 at least partially overlaps with the orthographic projection of the sub-pixel on the transistor layer 11. Since the sub-pixel layer 12 includes a plurality of sub-pixels, the orthographic projection of the light extraction structure 31 on the transistor layer 11 at least partially overlaps with the orthographic projection of the plurality of sub-pixels on the transistor layer 11. Such a design makes it easy for the light emitted by the sub-pixel to be emitted from the corresponding part of the light extraction structure, thereby improving the light extraction efficiency of the display panel, and further improving the display effect of the display panel.

[0087] In some embodiments, the light extraction structure includes a grating structure. The following describes an embodiment in which the light extraction structure includes a grating structure in conjunction with the accompanying drawings.

[0088] Figure 6 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure.

[0089] like Figure 6 As shown, the display panel includes a substrate 10, a first encapsulation layer 20, an encapsulation buffer layer 30 and a second encapsulation layer 40. The encapsulation buffer layer 30 includes a light extraction structure 31, a main layer 32 and a filling layer 33. The substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11. The sub-pixel layer 12 includes a pixel defining layer 121, a light emitting function layer 122 and an electrode layer 123. For example, Figure 6 Different light-emitting functional layers are shown in FIG. 1 , so that a red sub-pixel R, a green sub-pixel G and a blue sub-pixel B can be formed.

[0090] like Figure 6 As shown, the light extraction structure 31 includes a grating structure, which can further improve the light extraction efficiency of the display panel, thereby improving the display effect of the display panel.

[0091] In some embodiments, Figure 6 As shown, the grating structure includes a plurality of sub-grating structures 314, and the plurality of sub-grating structures 314 include at least a portion of sub-grating structures, and the structural parameters of the at least a portion of the sub-grating structures are different from each other.

[0092] In the above embodiment, the light extraction structure adopts a grating structure. Among the multiple sub-grating structures of the grating structure, the structural parameters of at least a part of the sub-grating structures are different from each other. In this way, gratings with different structural parameters can be used for different lights, thereby improving the light extraction efficiency of the display panel and further improving the display effect of the display panel.

[0093] For example, as described above, the substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11, and the sub-pixel layer 12 includes a plurality of sub-pixels. For example, the plurality of sub-pixels include a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B.

[0094] The at least a portion of the sub-grating structure includes a first sub-grating structure 314a, a second sub-grating structure 314b, and a third sub-grating structure 314c. The orthogonal projection of the first sub-grating structure 314a on the transistor layer 11 at least partially overlaps with the orthogonal projection of the red sub-pixel R on the transistor layer 11. For example, the orthogonal projection of the first sub-grating structure 314a on the transistor layer 11 completely covers the orthogonal projection of the red sub-pixel R on the transistor layer 11. The orthogonal projection of the second sub-grating structure 314b on the transistor layer 11 at least partially overlaps with the orthogonal projection of the green sub-pixel G on the transistor layer 11. For example, the orthogonal projection of the second sub-grating structure 314b on the transistor layer 11 completely covers the orthogonal projection of the green sub-pixel G on the transistor layer 11. The orthogonal projection of the third sub-grating structure 314c on the transistor layer 11 at least partially overlaps with the orthogonal projection of the blue sub-pixel B on the transistor layer 11. For example, the orthogonal projection of the third sub-grating structure 314c on the transistor layer 11 completely covers the orthogonal projection of the blue sub-pixel B on the transistor layer 11. The structural parameters of the first sub-grating structure 314a, the second sub-grating structure 314b and the third sub-grating structure 314c are different from each other.

[0095] Here, each sub-grating structure 314 includes a plurality of strip-shaped components 3142. Figure 6 As shown, the structural parameters of each sub-grating structure 314 include: the spacing D between adjacent strip components in the plurality of strip components 3142, and / or the height H of each strip component in the plurality of strip components. The height H refers to the height of each strip component in a direction perpendicular to the transistor layer.

[0096] In the above embodiment, the light extraction structure adopts a grating structure. For sub-pixels of different luminous colors, corresponding sub-grating structures are adopted. In this way, gratings with different structural parameters can be used for light of different colors, thereby improving the light extraction efficiency of the display panel and further improving the display effect of the display panel.

[0097] For example, a periodic grating can be formed by super surface treatment (e.g., plasma treatment). Here, it should be noted that the super surface treatment is performed in the presence of a precursor gas, and the precursor gas reacts to form a material layer deposited on the surface of the object. Therefore, the super surface treatment actually realizes a deposition process; during the deposition process, a grating structure can be formed in the presence of a mask. The above-mentioned grating structure is a periodic grating, which adopts a grating coupling method and utilizes the construction of a periodic microstructure of the interface of the organic layer, so as to use the grating to complete the matching of the wave vector and realize the light output coupling of the surface plasma.

[0098] The specific principle is as follows: the grating period is Λ, the incident angle of light is α, and the x-direction wave vector k of the grating structure interface is x for:

[0099]

[0100] Wherein, γ is an integer obtained, w is the angular frequency, g is the Bragg wave vector, and c is the speed of light.

[0101] The dispersion relation at this time is:

[0102]

[0103] Where ε is the dielectric constant, k p is the wave vector of the surface plasmon wave.

[0104] Further simplified to:

[0105]

[0106] Where Δk is the change in wave vector.

[0107] Therefore, the introduction of the microstructure enables the wave vector increment Δk to meet the wave vector matching requirement, thereby exciting the plasma mode.

[0108] Plasma treatment forms ripple light. The extraction of ripple light is based on grating diffraction. The extraction effect depends on the periodicity and geometry of the ripple. The periodicity design principle is: taking the wp mode (waveguide mode) and spp mode (surface plasmon mode) as an example, the refractive index n corresponding to the in-plane wave vector eff Should be

[0109]

[0110] Among them, k o is the free space wave vector.

[0111] As the grating diffracts, the in-plane wave vector for in, is the change in wave vector introduced by the diffraction grating. The direction after grating diffraction is opposite to the direction of the in-plane wave vector, so,

[0112]

[0113] Therefore, if light is to be emitted, it must satisfy At this time, the grating period is Λ, which satisfies:

[0114]

[0115] Here, λ is the wavelength of light passing through the grating (ie, the emission wavelength).

[0116] Depending on the power and time of treating the surface (eg, the surface of the host layer), different widths and / or heights of periodic gratings corresponding to red light, blue light, or green light can be formed.

[0117] For example, the period of the grating structure (ie, the length of each period) ranges from 200 nanometers to 600 nanometers.

[0118] For example, the intervals between adjacent strip-shaped components in the plurality of strip-shaped components 3142 range from 5 nanometers to 50 nanometers.

[0119] For example, the height of each strip-shaped member 3142 ranges from 10 nanometers to 50 nanometers.

[0120] The above describes an embodiment in which structural parameters of at least a portion of the plurality of sub-grating structures are different from each other.

[0121] In some other embodiments, the structural parameters of all sub-grating structures are the same.

[0122] Figure 7 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure.

[0123] and Figure 6 Compared to the display panel shown, Figure 7 The difference of the display substrate shown is that the grating structure includes a plurality of sub-grating structures 314, and the structural parameters of the plurality of sub-grating structures 314 are the same. For example, the plurality of sub-grating structures 314 include a first sub-grating structure 314a, a second sub-grating structure 314b and a third sub-grating structure 314c. The first sub-grating structure 314a corresponds to the red sub-pixel R, the second sub-grating structure 314b corresponds to the green sub-pixel G, and the third sub-grating structure 314c corresponds to the blue sub-pixel B. The structural parameters of the first sub-grating structure 314a, the second sub-grating structure 314b and the third sub-grating structure 314c are the same. That is, the grating structure is a periodic grating of the entire surface. Such a grating design can also improve the light extraction efficiency of the display panel to a certain extent, and facilitate the manufacture of the grating structure.

[0124] Figure 8 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure.

[0125] like Figure 8 As shown, the display panel includes a substrate 10, a first encapsulation layer 20, an encapsulation buffer layer 30 and a second encapsulation layer 40. The substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11. The encapsulation buffer layer 30 includes a light extraction structure 31, a main layer 32 and a filling layer 33.

[0126] and Figure 3Compared to the display panel shown, Figure 8 The difference of the display panel shown is that the material of the light extraction structure 31 is the same as that of the filling layer 33 , and the light extraction structure 31 is located on a side of the filling layer 33 away from the first encapsulation layer 20 .

[0127] This provides some other embodiments of implementing the light extraction structure in the encapsulation layer. In this embodiment, the light extraction structure is arranged on the filling layer of the encapsulation buffer layer, which is relatively easy to implement. The light extraction structure can improve the light extraction efficiency of the display panel, thereby improving the display effect of the display panel. In addition, the filling layer in the encapsulation buffer layer can play a role in blocking water and oxygen, thereby further reducing the adverse effects of water and oxygen on the display panel.

[0128] Fig. 9 is a schematic cross-sectional view showing a display panel according to another embodiment of the present disclosure.

[0129] like Fig. 9 As shown, the display panel includes a substrate 10, a first encapsulation layer 20, an encapsulation buffer layer 30 and a second encapsulation layer 40. The encapsulation buffer layer 30 includes a light extraction structure 31, a main layer 32 and a filling layer 33. The substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11.

[0130] The light extraction structure 31 includes a grating structure, which includes a plurality of sub-grating structures 314. At least a portion of the sub-grating structures 314 include a first sub-grating structure 314a, a second sub-grating structure 314b, and a third sub-grating structure 314c.

[0131] In some embodiments, the structural parameters of at least a portion of the sub-grating structures are different from each other. For example, the structural parameters of the first sub-grating structure 314a, the second sub-grating structure 314b and the third sub-grating structure 314c are different from each other.

[0132] In some other embodiments, the structural parameters of the plurality of sub-grating structures 314 are the same. For example, the structural parameters of the first sub-grating structure 314a, the second sub-grating structure 314b and the third sub-grating structure 314c are the same.

[0133] like Fig. 9 As shown, the material of the light extraction structure 31 is the same as that of the filling layer 33 , and the light extraction structure 31 is located on a side of the filling layer 33 away from the first encapsulation layer 20 .

[0134] This provides some other embodiments of implementing the light extraction structure in the encapsulation layer. In this embodiment, the light extraction structure is arranged on the filling layer of the encapsulation buffer layer, and the light extraction structure is designed as a grating structure, which can further improve the light extraction efficiency of the display panel, thereby improving the display effect of the display panel.

[0135] In some embodiments of the present disclosure, a display device is further provided. The display device includes the display panel as described above (for example, Figure 1 , Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 or Fig. 9 For example, the display device may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, or the like.

[0136] Fig.10 FIG. 1 is a flow chart showing a method for manufacturing a display panel according to an embodiment of the present disclosure. Fig.10 As shown, the manufacturing method includes steps S1010 to S1030. FIG. 11A to FIG. 11C 2 is a schematic cross-sectional view showing the structure of several stages in the manufacturing process of a display panel according to some embodiments of the present disclosure. Fig.10 , FIG. 11A to FIG. 11C and Figure 1 A method for manufacturing a display panel according to some embodiments of the present disclosure is described in detail.

[0137] like Fig.10 As shown, in step S1010, a first packaging layer is formed on a substrate.

[0138] For example, Fig.11A As shown, a first encapsulation layer 20 is formed on a substrate 10 by a deposition process.

[0139] Back to Fig.10 In step S1020, a packaging buffer layer is formed on a side of the first packaging layer away from the substrate, wherein the packaging buffer layer includes a light extraction structure.

[0140] This step 1020 can be combined with Fig. 11B and Fig. 11C to describe.

[0141] For example, Fig. 11B As shown, the main body layer 32 may be formed on the side of the first encapsulation layer 20 away from the substrate 10 by a deposition process.

[0142] In some embodiments, the main layer of the encapsulation buffer layer is a SiCN (silicon carbon nitride) film layer, and the main layer is deposited using a CVD process. Both SiCN and SiN film layers are hexagonal crystal structures, and there is a possibility of easy mixing, which can form a stable crystal structure. For example, SiCN:H2 film can be prepared by adding C2H2, N2 and H2 based on the experimental parameters of the SiN process.

[0143] Next, if Fig. 11C As shown, plasma treatment or surfactant treatment is performed on the main layer 32 to form the light extraction structure 31. For example, the light extraction structure includes a scattering structure 312.

[0144] In some embodiments, the plasma treatment includes: RIE (Reactive Ion Etching) plasma treatment or CVD (Chemical Vapor Deposition) plasma treatment, etc.

[0145] In some embodiments, the plasma treatment includes plasma treatment performed using fluorine (F) plasma.

[0146] For example, by introducing NF3 (nitrogen trifluoride) gas into the reaction chamber, the surface of the main layer of the encapsulation buffer layer is fluorinated, and fluorocarbon and fluorine are formed and inserted into the polymer chain to form -CF2 and -CF3 bonds. The process conditions of the plasma treatment include: power of 50W (watts) to 1500W, gas flow rate of 50sccm (standard cubic centimeter per minute) to 4000sccm, and time of 30s (seconds) to 900s. For example, the process conditions of the plasma treatment include: power of 1000W, gas flow rate of 1000sccm, and time of 150s.

[0147] After the above-mentioned metasurface treatment, a random scattering layer (as a light extraction structure) can be formed in the shape of a triangle, a cylinder, an ellipse, etc. The random scattering layer is simple in process and is not only conducive to light extraction in a wide visible light region, but also conducive to the stability of the angular spectrum and Lambertian emission. The random scattering layer can be a non-periodic structure with circular distribution, which can achieve uniform light extraction at different azimuth angles.

[0148] For another example, the surface of the main layer of the encapsulation buffer layer can also be treated by SF6 (sulfur hexafluoride) plasma treatment. This can change the treated surface from hydrophilic to hydrophobic. SF6, as a plasma dielectric gas, is used to etch semiconductors and various functional films, and has a significant effect on the surface morphology of the material. When etching occurs, micro-nano structures with a certain degree of roughness will be produced on the surface of the material. These micro-nano structures can effectively prevent the diffusion and infiltration of droplets, making the material exhibit a higher hydrophobicity. When the plasma power is large, the width of the micro-nano grooves produced by the etching action becomes larger, and the droplets can easily penetrate to the bottom of the etched microgrooves. When the diffusion of droplets is no longer blocked, the WCA (Water Contact Angle) value drops again.

[0149] SF6 active particles bombard the surface of the main layer, and the activated surface undergoes chemical reactions, producing volatile compounds, which lead to the formation of gully morphology. In this way, the surface roughness increases. The increase in surface roughness is caused by the scattering layer structure formed by etching.

[0150] After the main layer of the packaging buffer layer is treated with SF6 plasma, a surface with a relatively large roughness and a concave-convex structure appears.

[0151] At this point, the encapsulation buffer layer 30 is formed on the side of the first encapsulation layer 20 away from the substrate 10 , and the encapsulation buffer layer 30 includes a light extraction structure 31 .

[0152] In some embodiments, the shape of the formed scattering structure can be adjusted by adjusting at least one of the power of the plasma treatment, the spacing between the plates in the reaction chamber, and the speed of the plasma treatment.

[0153] Back to Fig.10 In step S1030, a second encapsulation layer is formed on a side of the encapsulation buffer layer away from the first encapsulation layer.

[0154] For example, Figure 1 As shown, the second encapsulation layer 40 is formed on the side of the encapsulation buffer layer 30 away from the first encapsulation layer 20 by a deposition process.

[0155] So far, a manufacturing method of a display panel according to some embodiments of the present disclosure is provided. The manufacturing method includes: forming a first encapsulation layer on a substrate; forming an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate, wherein the encapsulation buffer layer includes a light extraction structure; and forming a second encapsulation layer on a side of the encapsulation buffer layer away from the first encapsulation layer. In the manufacturing method, a light extraction structure is formed in the encapsulation buffer layer, and such a manufacturing method is easy to implement. The light extraction structure can improve the light extraction efficiency of the display panel, thereby improving the display effect of the display panel.

[0156] FIG. 12A to FIG. 12C 2 is a schematic cross-sectional view showing the structure of several stages in the manufacturing process of a display panel according to other embodiments of the present disclosure. FIG. 12A to FIG. 12C and Figure 3 A method for manufacturing a display panel according to other embodiments of the present disclosure is described in detail.

[0157] First, if Fig. 12A As shown, a first encapsulation layer 20 is formed on a substrate 10 by a deposition process. The substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11. For example, the first encapsulation layer 20 can be formed on the sub-pixel layer 12.

[0158] Next, if Fig. 12B As shown, a main body layer 32 is formed on the side of the first encapsulation layer 20 away from the substrate 10. Then, plasma treatment or surfactant treatment is performed on the main body layer 32 to form a light extraction structure 31. For example, the light extraction structure includes a scattering structure 312. Here, the main body layer 32 includes a gap 322.

[0159] Next, if Fig. 12C As shown, a filling layer 33 is formed on the side of the main body layer 32 away from the first encapsulation layer 20 , and a portion 331 of the filling layer 33 is filled in the gap 322 of the main body layer 32 . Another portion 332 of the filling layer 33 is formed on the surface of the main body layer 32 .

[0160] In some embodiments, forming a filling layer on the side of the main layer away from the first encapsulation layer includes alternately performing the following operations to form the filling layer on the main layer: introducing a first precursor gas into a cavity where the main layer is placed, performing a first pressure-holding treatment for a first predetermined period of time, and after the first pressure-holding treatment, opening the cavity to perform a cleaning treatment; and introducing a second precursor gas into the cavity, performing a second pressure-holding treatment for a second predetermined period of time, and after the second pressure-holding treatment, opening the cavity to perform a cleaning treatment.

[0161] The process of forming the filling layer is described below by taking aluminum oxide (Al2O3) as the material of the filling layer as an example.

[0162] For example, the first precursor gas is trimethylaluminum, and the second precursor gas is O2 (oxygen). For example, the surface of the main layer of the encapsulation buffer layer is modified by aluminum oxide using the ALD (Atomic layer deposition) process. By optimizing the deposition process parameters such as temperature and exposure, the precursor is effectively filled into the near surface of the main layer. For example, the temperature ranges from 70°C to 110°C. The exposure is the product of the precursor concentration and the exposure time.

[0163] The improved conditions of the ALD process cycle (also called small cycle modification conditions) described above improve the barrier properties of the encapsulation buffer layer and maintain good anti-bending properties of the encapsulation buffer layer, so that it can be integrated and applied to the encapsulation of OLED devices. The filling process is to alternate the pulses of the two precursors, but the cavity is immediately closed after the end of a single pulse to allow the precursor to diffuse freely. This step is called pressure holding. After the pressure holding is completed, the cavity is opened for cleaning.

[0164] Fig.16 is a schematic diagram illustrating a process of forming a filling layer according to an embodiment of the present disclosure.

[0165] like Fig.16 As shown, in step 1, a first precursor gas 1611 is introduced into the cavity where the main body layer is placed, and a first pressure holding process 1612 is performed for a first predetermined time. After the first pressure holding process, the cavity is opened to perform a cleaning process 1613. For example, nitrogen gas is used to perform the cleaning process to remove impurities.

[0166] In some embodiments, the first predetermined duration ranges from 10s to 50s. Of course, those skilled in the art will appreciate that the first predetermined duration may also be other durations, and the scope of the present disclosure is not limited thereto.

[0167] like Fig.16 As shown, in step 2, a second precursor gas 1621 is introduced into the chamber, and a second pressure holding process 1622 of a second predetermined time is performed. After the second pressure holding process, the chamber is opened to perform a cleaning process 1623. For example, nitrogen gas is used to perform the cleaning process to remove impurities.

[0168] In some embodiments, the second predetermined time period ranges from 10s to 50s. Of course, those skilled in the art will appreciate that the second predetermined time period may also be other time periods, and the scope of the present disclosure is not limited thereto.

[0169] The above step 1 and step 2 are performed alternately to form a filling layer on the main layer.

[0170] The following takes the filling layer of aluminum oxide material as an example to describe the growth mechanism of the filling layer.

[0171] Fig.17 Schematic diagram showing the mechanism of forming a filling layer according to some embodiments of the present disclosure. In this process, water molecules (H2O) are used as an oxygen source to react with trimethylaluminum (Al(CH3)3) to form aluminum oxide.

[0172] like Fig.17 As shown, in step S1701, thermal expansion is performed on the main body layer.

[0173] Next, in step S1702, trimethylaluminum (Al(CH3)3) 1710 penetrates and adsorbs on the surface of the bulk layer.

[0174] Next, in step S1703, water molecules (H2O) 1720 infiltrate and react with trimethylaluminum. It should be noted that although water molecules are used as an oxygen source to react with trimethylaluminum to form aluminum oxide, those skilled in the art will appreciate that oxygen can also be used as an oxygen source to react with trimethylaluminum to form aluminum oxide. Therefore, in this step, oxygen can also react with trimethylaluminum to form aluminum oxide.

[0175] Next, in step S1704, a core of aluminum oxide (Al2O3) 1730 is formed.

[0176] Next, in step S1705, an aluminum oxide film is formed on the surface of the body layer.

[0177] Next, in step S1706, aluminum oxide is linearly grown on the surface of the bulk layer.

[0178] In this way, a filling layer of aluminum oxide is formed.

[0179] From the above, it can be seen that there is a nucleation stage in the process of filling process, but at this time, the growth rate first increases, then slows down and finally reaches stability. The local growth rate is faster than the single-cycle growth rate after stability (that is, pure ALD deposition process). Moreover, when it reaches stability, its growth rate is slightly faster than the single-cycle growth rate after stability in the ALD process. This can be understood that with the introduction of the pressure holding process, it is more conducive to the full reaction of the surface active sites, thus showing a higher mass increment.

[0180] At this point, the encapsulation buffer layer 30 is formed on the side of the first encapsulation layer 20 away from the substrate 10 , and the encapsulation buffer layer 30 includes a light extraction structure 31 , a main layer 32 and a filling layer 33 .

[0181] Next, if Figure 3 As shown, the second encapsulation layer 40 is formed on the side of the encapsulation buffer layer 30 away from the first encapsulation layer 20 by a deposition process.

[0182] So far, a method for manufacturing a display panel according to some other embodiments of the present disclosure is provided. In the manufacturing method, not only a light extraction structure but also a filling layer is formed in the encapsulation buffer layer. In this way, not only the light extraction efficiency of the display panel is improved, but also the effect of the encapsulation layer in blocking water and oxygen is improved.

[0183] FIG. 13A to FIG. 13C 2 is a schematic cross-sectional view showing the structure of several stages in the manufacturing process of a display panel according to other embodiments of the present disclosure. FIG. 13A to FIG. 13C and Figure 6 A method for manufacturing a display panel according to other embodiments of the present disclosure is described in detail.

[0184] First, if Fig.13A As shown, a first encapsulation layer 20 is formed on a substrate 10 by a deposition process. The substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11. The sub-pixel layer 12 also includes an electrode layer (e.g., a cathode layer) 123 covering the pixel defining layer 121 and the light-emitting functional layer 122. For example, the first encapsulation layer 20 can be formed on the electrode layer 123.

[0185] Next, if Fig. 13B As shown, a main body layer 32 is formed on a side of the first encapsulation layer 20 away from the substrate 10 .

[0186] Next, if Fig. 13B As shown, a light extraction structure 31 is formed on a main layer 32 by a deposition process using a mask plate 1300. The light extraction structure includes a grating structure. For example, the grating structure includes a plurality of sub-grating structures 314. At least a portion of the sub-grating structures of the plurality of sub-grating structures 314 include: a first sub-grating structure 314a, a second sub-grating structure 314b, and a third sub-grating structure 314c. The structural parameters of the first sub-grating structure 314a, the second sub-grating structure 314b, and the third sub-grating structure 314c may be the same, or may be different from each other.

[0187] In some embodiments, the process conditions for forming the grating structure include: a power range of 50 W to 2000 W, a pressure range of 50 mtorr to 2000 mtorr, a gas flow rate range of 50 sccm to 5000 sccm, and a time of 50 s to 900 s. For example, the process conditions for forming the grating structure include: a power of 500 W, a pressure of 50 mtorr, a gas flow rate of 300 sccm, and a time of 300 s.

[0188] Next, the mask 1300 is removed.

[0189] Next, optionally, Fig. 13C As shown, a filling layer 33 is formed on the side of the main body layer 32 away from the first encapsulation layer 20 , and a portion 331 of the filling layer 33 is filled in the gap 322 of the main body layer 32 . Another portion 332 of the filling layer 33 is formed on the surface of the main body layer 32 .

[0190] In this way, the encapsulation buffer layer 30 is formed on the side of the first encapsulation layer 20 away from the substrate 10 . The encapsulation buffer layer 30 includes a light extraction structure 31 , a main layer 32 and a filling layer 33 .

[0191] In some other embodiments, the encapsulation buffer layer 30 may not include the filling layer 33 , and therefore, the filling layer 33 may not be formed in the above process.

[0192] Next, if Figure 6 As shown, the second encapsulation layer 40 is formed on the side of the encapsulation buffer layer 30 away from the first encapsulation layer 20 by a deposition process.

[0193] So far, a method for manufacturing a display panel according to some other embodiments of the present disclosure is provided. In the manufacturing method, a light extraction structure having a grating structure is formed in the encapsulation buffer layer. This can further improve the light extraction efficiency of the display panel, thereby improving the display effect of the display panel.

[0194] FIG. 14A to FIG. 14C 2 is a schematic cross-sectional view showing the structure of several stages in the manufacturing process of a display panel according to other embodiments of the present disclosure. FIG. 14A to FIG. 14C and Figure 8 A method for manufacturing a display panel according to other embodiments of the present disclosure is described in detail.

[0195] First, if Fig.14A As shown, a first encapsulation layer 20 is formed on a substrate 10 by a deposition process. The substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11. For example, the first encapsulation layer 20 can be formed on the sub-pixel layer 12.

[0196] Next, if Fig.14A As shown, a main body layer 32 is formed on a side of the first encapsulation layer 20 away from the substrate 10 . The main body layer 32 has a gap 322 .

[0197] Next, if Fig. 14B As shown, a filling layer 33 is formed on the side of the main body layer 32 away from the first encapsulation layer 20. A portion 331 of the filling layer 33 is filled in the gap 322 of the main body layer 32. Another portion 332 of the filling layer 33 is formed on the surface of the main body layer 32.

[0198] Next, if Fig. 14C As shown, a plasma treatment or a surfactant treatment is performed on the filling layer 33 to form a light extraction structure 31. The light extraction structure 31 includes a scattering structure.

[0199] In this way, an encapsulation buffer layer 30 is formed on the side of the first encapsulation layer away from the substrate. The encapsulation buffer layer 30 includes a light extraction structure 31 , a main layer 32 and a filling layer 33 .

[0200] Next, if Figure 8 As shown, the second encapsulation layer 40 is formed on the side of the encapsulation buffer layer 30 away from the first encapsulation layer 20 by a deposition process.

[0201] So far, a method for manufacturing a display panel according to some other embodiments of the present disclosure is provided. In the manufacturing method, a light extraction structure is formed on the filling layer of the encapsulation buffer layer. In this way, not only the light extraction efficiency of the display panel is improved, but also the effect of the encapsulation layer in blocking water and oxygen is improved.

[0202] FIG. 15A to FIG. 15C 2 is a schematic cross-sectional view showing the structure of several stages in the manufacturing process of a display panel according to other embodiments of the present disclosure. FIG. 15A to FIG. 15C and Fig. 9 A method for manufacturing a display panel according to other embodiments of the present disclosure is described in detail.

[0203] First, if Fig.15A As shown, a first encapsulation layer 20 is formed on a substrate 10 by a deposition process. The substrate 10 includes a transistor layer 11 and a sub-pixel layer 12 on the transistor layer 11. For example, the first encapsulation layer 20 can be formed on the sub-pixel layer 12.

[0204] Next, if Fig.15A As shown, a main body layer 32 is formed on a side of the first encapsulation layer 20 away from the substrate 10 . The main body layer 32 has a gap 322 .

[0205] Next, if Fig. 15B As shown, a filling layer 33 is formed on the side of the main body layer 32 away from the first encapsulation layer 20 . A portion 331 of the filling layer 33 is filled in the gap 322 of the main body layer. Another portion 332 of the filling layer 33 is formed on the surface of the main body layer 32 .

[0206] Next, if Fig. 15C As shown, a light extraction structure 31 is formed on a filling layer 33 by a deposition process using a mask plate 1300, and the light extraction structure 31 includes a grating structure. For example, the grating structure includes a plurality of sub-grating structures 314. At least a portion of the sub-grating structures of the plurality of sub-grating structures 314 include: a first sub-grating structure 314a, a second sub-grating structure 314b, and a third sub-grating structure 314c. The structural parameters of the first sub-grating structure 314a, the second sub-grating structure 314b, and the third sub-grating structure 314c may be the same, or may be different from each other.

[0207] In this way, the encapsulation buffer layer 30 is formed on the side of the first encapsulation layer 20 away from the substrate 10 . The encapsulation buffer layer 30 includes a light extraction structure 31 , a main layer 32 and a filling layer 33 .

[0208] Next, the mask 1300 is removed.

[0209] Next, if Fig. 9As shown, the second encapsulation layer 40 is formed on the side of the encapsulation buffer layer 30 away from the first encapsulation layer 20 by a deposition process.

[0210] So far, a method for manufacturing a display panel according to some other embodiments of the present disclosure is provided. In the manufacturing method, a light extraction structure is formed on the filling layer of the encapsulation buffer layer, and the light extraction structure includes a grating structure. In this way, the light extraction efficiency of the display panel can be further improved.

[0211] Fig.18 1 is a graph showing the water contact angle of the encapsulation buffer layer after the bulk layer of the encapsulation buffer layer is subjected to plasma treatment under different process conditions according to some embodiments of the present disclosure. Here, "substantially" means that it has not been subjected to plasma treatment, and the following is similar.

[0212] from Fig.18 It can be seen that after the main layer of the encapsulation buffer layer is subjected to plasma treatment using different process conditions, the water contact angles on the surface of the encapsulation buffer layer are different.

[0213] For example, without plasma treatment, the water contact angle of the surface of the encapsulation buffer layer is 78.6°; under the process conditions of plasma treatment with a power of 300 W and a time of 60 s, the water contact angle of the surface of the encapsulation buffer layer is 89.5°; under the process conditions of plasma treatment with a power of 300 W and a time of 180 s, the water contact angle of the surface of the encapsulation buffer layer is 90.4°; under the process conditions of plasma treatment with a power of 300 W and a time of 300 s, the water contact angle of the surface of the encapsulation buffer layer is 91.6°; under the process conditions of plasma treatment with a power of 100 W and a time of 60 s, the water contact angle of the surface of the encapsulation buffer layer is 89.2°; under the process conditions of plasma treatment with a power of 500 W and a time of 60 s, the water contact angle of the surface of the encapsulation buffer layer is 92.1°.

[0214] Fig.19 is a graph showing the roughness results of the encapsulation buffer layer after the main layer of the encapsulation buffer layer is subjected to plasma treatment under different process conditions according to some embodiments of the present disclosure.

[0215] from Fig.19 It can be seen that after the main layer of the encapsulation buffer layer is subjected to plasma treatment using different process conditions, the roughness of the encapsulation buffer layer is different.

[0216] For example, in the absence of plasma treatment (i.e., the "basic" case), the surface roughness of the encapsulation buffer layer is 0.409nm (nanometer); under the process conditions of plasma treatment with a power of 300W and a time of 60s, the surface roughness of the encapsulation buffer layer is 0.465nm; under the process conditions of plasma treatment with a power of 300W and a time of 180s, the surface roughness of the encapsulation buffer layer is 0.407nm; under the process conditions of plasma treatment with a power of 300W and a time of 300s, the surface roughness of the encapsulation buffer layer is 2.1nm; under the process conditions of plasma treatment with a power of 100W and a time of 60s, the surface roughness of the encapsulation buffer layer is 0.401nm; under the process conditions of plasma treatment with a power of 500W and a time of 60s, the surface roughness of the encapsulation buffer layer is 1.55nm.

[0217] Fig. 20 3 is a surface morphology diagram of the encapsulation buffer layer after the main layer of the encapsulation buffer layer is subjected to plasma treatment under different process conditions according to some embodiments of the present disclosure.

[0218] from Fig. 20 It can be seen that after the main layer of the encapsulation buffer layer is subjected to plasma treatment using different process conditions, the surface morphology of the encapsulation buffer layer is different.

[0219] So far, various embodiments of the present disclosure have been described in detail. In order to avoid obscuring the concept of the present disclosure, some details known in the art are not described. Based on the above description, those skilled in the art can fully understand how to implement the technical solution disclosed here.

[0220] Although some specific embodiments of the present disclosure have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the present disclosure. It should be understood by those skilled in the art that the above embodiments may be modified or some technical features may be replaced by equivalents without departing from the scope and spirit of the present disclosure. The scope of the present disclosure is defined by the appended claims.

Claims

1. A display panel, comprising: substrate; a first encapsulation layer on the substrate; An encapsulation buffer layer on a side of the first encapsulation layer away from the substrate, wherein the encapsulation buffer layer comprises a light extraction structure; and A second encapsulation layer is provided on a side of the encapsulation buffer layer away from the first encapsulation layer.

2. The display panel according to claim 1, wherein: The encapsulation buffer layer further includes a main body layer on a side of the first encapsulation layer away from the substrate, and the light extraction structure is located between the main body layer and the second encapsulation layer.

3. The display panel according to claim 1 or 2, wherein: The substrate comprises a transistor layer and a sub-pixel layer on the transistor layer, wherein the sub-pixel layer comprises a plurality of sub-pixels; An orthographic projection of the light extraction structure on the transistor layer at least partially overlaps with an orthographic projection of the plurality of sub-pixels on the transistor layer.

4. The display panel according to claim 1 or 2, wherein: The light extraction structure includes a grating structure.

5. The display panel according to claim 4, wherein: The grating structure includes a plurality of sub-grating structures, and the plurality of sub-grating structures include at least a portion of sub-grating structures, and structural parameters of the at least a portion of sub-grating structures are different from each other.

6. The display panel according to claim 5, wherein: The substrate comprises a transistor layer and a sub-pixel layer on the transistor layer, the sub-pixel layer comprises a plurality of sub-pixels, and the plurality of sub-pixels comprises a red sub-pixel, a green sub-pixel and a blue sub-pixel; The at least a portion of the sub-grating structure includes a first sub-grating structure, a second sub-grating structure and a third sub-grating structure, wherein the orthographic projection of the first sub-grating structure on the transistor layer at least partially overlaps with the orthographic projection of the red sub-pixel on the transistor layer, the orthographic projection of the second sub-grating structure on the transistor layer at least partially overlaps with the orthographic projection of the green sub-pixel on the transistor layer, the orthographic projection of the third sub-grating structure on the transistor layer at least partially overlaps with the orthographic projection of the blue sub-pixel on the transistor layer, and the structural parameters of the first sub-grating structure, the second sub-grating structure and the third sub-grating structure are different from each other.

7. The display panel according to claim 4, wherein: The grating structure includes a plurality of sub-grating structures, and the plurality of sub-grating structures have the same structural parameters.

8. The display panel according to any one of claims 5 to 7, wherein: Each sub-grating structure includes a plurality of strip-shaped components; The structural parameters of each sub-grating structure include: the spacing between adjacent strip-shaped components in the plurality of strip-shaped components, and / or the height of each strip-shaped component in the plurality of strip-shaped components.

9. The display panel according to claim 8, wherein: The spacing between adjacent strip-shaped components in the plurality of strip-shaped components ranges from 5 nanometers to 50 nanometers; The height of each strip-shaped feature ranges from 10 nanometers to 50 nanometers.

10. The display panel according to claim 2, wherein: The encapsulation buffer layer further includes a filling layer, a portion of which is filled in the gaps in the main layer, and another portion of the filling layer is located on a surface of the main layer away from the first encapsulation layer.

11. The display panel according to claim 10, wherein: The material of the filling layer includes metal oxide or silicon oxide.

12. The display panel according to claim 10 or 11, wherein: The material of the light extraction structure is different from the material of the filling layer; The filling layer surrounds the light extraction structure.

13. The display panel according to claim 10 or 11, wherein: The material of the light extraction structure is the same as that of the filling layer; The light extraction structure is located on a side of the filling layer away from the first encapsulation layer.

14. The display panel according to claim 1, wherein: The light extraction structure includes a scattering structure.

15. The display panel according to claim 14, wherein: The scattering structure has a shape of at least one of a triangle, a cylinder and an ellipse.

16. A display device, comprising: A display panel as claimed in any one of claims 1 to 15.

17. A method for manufacturing a display panel, comprising: forming a first encapsulation layer on the substrate; Forming an encapsulation buffer layer on a side of the first encapsulation layer away from the substrate, wherein the encapsulation buffer layer includes a light extraction structure; and A second encapsulation layer is formed on a side of the encapsulation buffer layer away from the first encapsulation layer.

18. The manufacturing method according to claim 17, wherein: Forming a packaging buffer layer on a side of the first packaging layer away from the substrate comprises: forming a main body layer on a side of the first encapsulation layer away from the substrate; and The main layer is subjected to plasma treatment or surfactant treatment to form the light extraction structure.

19. The manufacturing method according to claim 18, wherein: The plasma treatment includes plasma treatment performed using fluorine plasma.

20. The manufacturing method according to claim 17, wherein: Forming a packaging buffer layer on a side of the first packaging layer away from the substrate comprises: forming a main body layer on a side of the first encapsulation layer away from the substrate; and The light extraction structure is formed on the main layer by a deposition process using a mask plate, and the light extraction structure includes a grating structure.

21. The manufacturing method according to any one of claims 18 to 20, wherein: Forming a packaging buffer layer on a side of the first packaging layer away from the substrate further comprises: A filling layer is formed on a side of the main body layer away from the first encapsulation layer, and a portion of the filling layer is filled in the gaps in the main body layer.

22. The manufacturing method according to claim 21, wherein: Forming a filling layer on a side of the main body layer away from the first encapsulation layer includes alternately performing the following operations to form the filling layer on the main body layer: Passing a first precursor gas into a cavity in which the main body layer is placed, performing a first pressure-maintaining treatment for a first predetermined time, and after the first pressure-maintaining treatment, opening the cavity to perform a cleaning treatment; and A second precursor gas is introduced into the chamber to perform a second pressure-maintaining treatment for a second predetermined time. After the second pressure-maintaining treatment, the chamber is opened to perform a cleaning treatment.

23. The manufacturing method according to claim 17, wherein: Forming a packaging buffer layer on a side of the first packaging layer away from the substrate comprises: forming a main body layer on a side of the first encapsulation layer away from the substrate; forming a filling layer on a side of the main body layer away from the first encapsulation layer, wherein a portion of the filling layer is filled in the gaps in the main body layer; and The filling layer is subjected to plasma treatment or surfactant treatment to form the light extraction structure.

24. The manufacturing method according to claim 17, wherein: Forming a packaging buffer layer on a side of the first packaging layer away from the substrate comprises: forming a main body layer on a side of the first encapsulation layer away from the substrate; forming a filling layer on a side of the main body layer away from the first encapsulation layer, wherein a portion of the filling layer is filled in the gaps in the main body layer; and The light extraction structure is formed on the filling layer by a deposition process using a mask plate, and the light extraction structure includes a grating structure.

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