Quantum techniques, micro-electro-optical or

Abstract

The invention relates to quantum technology, micro electro-optical or photonic systems, methods of production and uses. The quantum technology, micro electro-optical or photonic system comprises: a planar substrate (Sub), where the planar substrate (Sub) is a semiconductor crystal comprising a microelectronic circuit; wherein the system further comprises: a partial region of a colloidal film (FM), the partial region of the colloidal film (FM) having at least one further crystal, the further crystal comprising a color center (FZ), and wherein the further crystal is mechanically connected to the planar substrate (Sub) by means of the colloidal film (FM).

Description

[0001] This application is a divisional application of a patent application with application number 202080039101.3, whose application date is May 17, 2020 and invention name is “Device and method for using diamond nanocrystals with NV color centers in CMOS circuits”. Technical Field

[0002] The present invention relates generally to apparatus and methods for using functional nanoparticles in integrated circuits, and more particularly to apparatus and methods for using diamond nanocrystals having NV color centers in CMOS circuits. Background Art

[0003] Currently, NV centers in diamond crystals are preferred for quantum technology applications. These NV centers are optically controlled and read out.

[0004] For large-scale technological applications, it would be desirable to be able to fabricate NV centres on silicon wafers in order to be able to combine them with conventional micro-electro-optical systems and thus benefit from the latest technologies in photonics, plasmonics and microelectronics. This solution is currently unknown, as the fabrication process: diamond layers with NV centres are not compatible with CMOS due to the temperatures involved.

[0005] In the IEEE article M.I.I.brahim, C.Foy, D.Kim, D.R. Englund, R.Han, “Room-Temperature Quantum Sensing in CMOS: On-Chip Detection of Electronic Spin States in Diamond Color Centers for Magnetometry,” 2018 Symposium on VLSI Circuits Digest of Technical Papers, the authors write: “Because the crystal orientation of nanodiamonds is random, the effective Bz (and therefore the amount of splitting) for each orientation is different. As a result, spectral broadening is observed rather than splitting. Replacing nanodiamonds with single crystal diamonds can solve this problem.” For example, according to D.Kim, M.I.I.brahim, C.Foy, M.E. Trusheim, R.Han, D.R. Englund, “CMOS-Integrated Diamond Nitrogen-Vacancy Quantum Sensing in CMOS: On-Chip Detection of Electronic Spin States in Diamond Color Centers for Magnetometry,” 2018 Symposium on VLSI Circuits Digest of Technical Papers, the authors write: “Because the crystal orientation of nanodiamonds is random, the effective Bz (and therefore the amount of splitting) for each orientation is different. As a result, spectral broadening is observed rather than splitting. Replacing nanodiamonds with single crystal diamonds can solve this problem.” Sensor (CMOS Integrated Diamond Nitrogen Vacancy Quantum Sensor)" arXiv:1810.01056vl [physics.app-ph] 2 Oct 2018, it is known that the manual combination of macroscopic CVD diamond with NV centers and CMOS readout circuits. Therefore, a technology for directional placement of diamond nanocrystals on CMOS wafers is urgently needed to achieve large-scale production and overcome these difficulties.

[0006] From DE 10 2012 025 088 A1 it is known to place a single crystal with color centers on a multi-quantum well diode in the form of a single photon source. The technical teaching disclosed in this patent only enables direct combination of such a color center crystal with a light source and, moreover, the production of such a color center crystal is not compatible with CMOS.

[0007] According to DE 10 2014 219 547 A1, it is known to place a crystal as an admixture on a spin-on glass in connection with the production of a pressure sensor. The state of the color center is read out by an external lens.

[0008] From US 2005 0 218 397 A1 it is known to use a NEMS antenna for a read head of a hard disk.

[0009] None of these documents disclose any solution for building a compact single-chip quantum sensor system based on NV centers, as they do not disclose the reliable production of such a system and its construction.

[0010] For the purposes of this document, a color center is understood to be a paramagnetic center in a crystal. These paramagnetic centers are preferably NV centers in diamond. If appropriate, SiV centers and similar centers can be used. Summary of the invention

[0011] Purpose of the invention

[0012] The object of the present invention is therefore to create a solution which does not have the above-mentioned disadvantages of the prior art and which has other advantages.

[0013] Where applicable, features of the claims may be combined with each other. The same applies to features in the description.

[0014] Rights come from claims.

[0015] Solution to the Problem According to the Invention

[0016] The basic idea of ​​the production method of quantum technology, micro-electro-optics, microelectronics or photonic systems is to provide nanodiamonds with NV centers, and then stir the nanodiamonds and a carrier material (TM) (e.g. gelatin) together in, for example, an aqueous solution or a solution with other suitable solvents or similar suitable reagents to form a colloidal solution of the nanodiamonds in the carrier. Therefore, it is the assembly principle of functional nanoparticles for MOS or CMOS microsystems. This principle can generally be extended to the assembly of functional nanoparticles in circuits manufactured using MOS or CMOS circuits or other semiconductors and / or microtechnology.

[0017] The invention is explained in a schematically simplified manner based on the exemplary drawings.

[0018] These features can be combined with one another as far as this makes sense.

[0019] The quantum technology system presented here preferably does not use microwaves which require precise alignment of crystals. Nevertheless, the basic principles disclosed here are also applicable to such microwave systems.

[0020] For the nanoparticles (NPs) mentioned below, diamonds with NV centers are preferably used. Their size is preferably but obviously not necessarily in the nanometer range. Therefore, other size ranges are obviously included in the claims and the present disclosure. According to the present invention, it is recognized that, compared to the prior art, microwave radiation is not required to operate the system so that paramagnetic centers excited to a high level are reduced to an intermediate level, and the paramagnetic centers are also referred to as color centers in the following. In the case of diamonds with NV centers, the color centers are NV centers. It is generally sufficient if the sensor element, such as a diamond crystal, has a sufficiently high paramagnetic center density, that is, for example, preferably has a sufficient density of NV centers in diamond. Based on the number of carbon atoms per unit volume, the exemplary diamond crystal preferably has an NV center density of more than 0.01 ppm. Of course, for example, more than 0.01 ppm and / or more than 10 can be used. -3 ppm and / or greater than 10 -4 ppm and / or greater than 10 -5 ppm and / or greater than 10 -6 The fluorescence signal of the NV centres is further reduced when irradiated with green light, which places increasing demands on the electronic post-processing. It is not necessary to achieve the aforementioned density of colour centres, i.e. the preferred density of NV centres, everywhere in the sensor element (i.e. the exemplary diamond). In the course of the invention it was realized that it is sufficient if this density is exceeded locally. Preferably, for operating the sensor system, more than 100, more preferably more than 1000, more preferably more than 10 4 More than 10, preferably 5 More than 10, preferably 6 More than 10, preferably 7 As a result of spontaneous emission, some paramagnetic centers are d From the excited state, it then spontaneously assumes an intermediate state of lower energy, which in the prior art has only been achieved by stimulated emission using microwave radiation. In the case of NV centers in diamond, the sensor element can be a single diamond or a plurality of diamonds. The diamond can be large or small. The diamond can be in powder form or granular. The diamond can be nanocrystalline. The nanocrystalline form can be processed as a colloidal solution, which will be discussed below. Preferably, the quantum technology, micro-electro-optics or photonic systems to be produced here are microwave-free, which in the case of NV centers as color centers is only achieved by a high NV center density. DETAILED DESCRIPTION

[0021] Figure 1

[0022] Figure 1The basic idea is illustrated in : First, we assume here that a sufficiently large number of functional nanoparticles (NP) are present in the same form. As an example, we assume here that the nanoparticles (NP) are nanodiamonds with color centers (FZ). These nanodiamonds are examples of other possible nanoparticles that may have different properties and / or different color centers. Therefore, in the following, nanodiamonds are also referred to with the reference symbol NP in order to indicate this example for the nanoparticle itself. In the case of nanodiamonds, NV centers are preferred as color centers.

[0023] The nanodiamonds (NP) with color centers (FZ) are placed together with a previously selected and provided carrier, for example in a container, and optionally a solvent (LM) for adjusting the viscosity, for mixing and stirring (VR) until a colloidal mixture (KL) is formed, which is suitable for the intended further processing, for example in a subsequent spin coating or printing process (for example a screen printing process and / or stencil printing and / or pad printing), wherein the carrier is provided in a suitable form as a carrier material (TM), for example as an aqueous gelatin solution.

[0024] As mentioned above, these methods are in principle not limited to the use of these carrier materials (TM) (gelatin in aqueous solution) and these nanoparticles (NP), i.e. nanodiamonds with NV color centers as color centers (FZ). In the context of this document, the term "color center" includes all suitable paramagnetic centers. For example, if diamond nanoparticles as nanoparticles (NP) with SiV centers as color centers (FZ) or silicon nanoparticles with corresponding paramagnetic centers are useful for achieving the technical purpose of the system to be produced, these nanoparticles can be used instead of nanodiamonds with NV color centers. In order to simplify the description, we do not show all meaningful variations here. However, the claimed content also includes such combinations. If the technical tasks to be solved by the system to be produced and the intended production method (coating and / or printing and / or local wetting) require it, other combinations of nanoparticles (NP) of other materials and other carrier materials (TM) and other solvents (LM) can also be used. In the following, mainly only the term "coating" is used. If applicable, this term should also include the terms "painting", "coating" and / or "local wetting". Here, the reference symbol (NP) represents not only nanodiamonds but also more generally nanocrystals and even more generally nanoparticles (NP) which may also include functional elements.

[0025] These functional elements may be quantum mechanical functional elements such as color centers and / or electromagnetic functional elements such as antennas and / or nanoscale circuits and / or electronic components and / or electronic circuits and / or antennas, etc.

[0026] However, these functional elements may also be ferromagnetic, diamagnetic and other paramagnetic functional elements.

[0027] Nanoparticles (NPs) can be amorphous, glassy, ​​polycrystalline or single crystalline.

[0028] Nanoparticles (NPs) can also include different materials and layers.

[0029] For example, they may be silicon nanocrystals coated with a SiO2 layer and preferably having suitable paramagnetic centers. For example, according to the prior art, a variety of different transparent lacquers are also known, which, if necessary, can each be tested for suitability as carrier material (TM).

[0030] It is particularly noted that separate nanoscopic devices such as separate MEMS or NMES antennas or other nanoscopic substructures can also be placed in a desired manner. Thus, nanoparticles (NPs) can include nanoscopic functional elements whose operating principles are electromagnetic and / or optical (which is also electromagnetic interaction.) and / or mechanical and / or catalytic.

[0031] For example, MEMS and NEMS structures can be plasmonic antennas, but also nanoparticles (NPs), in particular nanodiamonds (NDs), for example, with color centers (FZs) (in the case of nanodiamonds, e.g. NV and / or H3 centers) or other quantum technology functional elements.

[0032] Thus, the process described here is a process for assembling a large number of nanoscopic, preferably similar objects, which are, however, not necessarily objects of the same type.

[0033] Production of Nanoscopic Objects (Nanoparticles (NP))

[0034] In a first set of processing steps, such nanoscopic objects (nanoparticles (NPs)) can be mass-produced on a wafer, such as a silicon wafer or a GaAs wafer or a diamond wafer, using photolithography methods known in microtechnology. Then, in a second set of processing steps, these nanoscopic objects (nanoparticles (NPs)) can be separated from the wafer, for example, by wet-chemical methods and by subsequent filtration from a wet-chemical etchant used for separation, for a subsequent placement process.

[0035] Nanoparticles (NP) in the sense of this document refer to objects smaller than 50 μm, better smaller than 20 μm, better smaller than 10 μm, better smaller than 5 μm, better smaller than 2 μm, better smaller than 1 μm, better smaller than 500 nm, better smaller than 200 nm, better smaller than 100 nm, better smaller than 50 nm, better smaller than 20 nm, better smaller than 10 nm, better smaller than 5 nm, better smaller than 2 nm, better smaller than 1 nm.

[0036] Production process of KL

[0037] We refer again Figure 1 .

[0038] By mixing nanoparticles (NP), here nanodiamonds as an example, and a carrier material (TM), here, for example, aqueous gelatin, a processable, flowable substance, i.e. a colloidal mixture in the form of a colloidal lacquer (KL) can be produced. By adding more or less solvent (LM), here, for example, water, the viscosity of the colloidal lacquer (KL) can usually be optimally adjusted. Depending on the carrier material (TM), organic and inorganic solvents, such as alcohol and / or water, are suitable as solvents (LM). It is useful to mix different types of nanoparticles. This is useful, for example, if some of the nanoparticles are ferromagnetic or have ferromagnetic sub-devices.

[0039] Method for coating a planar substrate (Sub)

[0040] In order to be able to combine functional nanoparticles (NP) with a planar substrate (Sub) such as a MOS wafer or a CMOS wafer or a BICMOS wafer or a bipolar wafer or a planar glass wafer or a plastic wafer, a process of coating the planar substrate (Sub) with the previously described colloidal lacquer (KL) is necessary.

[0041] The basic version of the method presented here provides for applying the resulting colloid lacquer (KL) to a planar substrate (Sub), preferably a semiconductor substrate, such as a silicon wafer (see Figure 2 ). For possible coating processes in the prior art, reference is made, for example, to Marc J. Madou “Fundamentals of Microfabrication: the Science of miniaturization” CRC Press 2002.

[0042] Figure 2An example of a possible coating process corresponding to a coating process is shown. For example, a colloidal lacquer (KL) is applied to the planar substrate in a manner of coating a preferred predetermined amount per unit time by a dispenser (DP) preferably located at the symmetry center of an exemplary planar substrate (Sub) (here an exemplary wafer), i.e. a special dosing device. The wafer as an exemplary planar substrate (Sub) is placed on the turntable of a spin coater (SC). The turntable of the spin coater (SC) is usually rotated at a typical speed of the process according to a typical time speed curve of the process. The coating and rotation speed can depend on the time point since the coating, for example, started by a dispenser (DP), so as to ensure the best results of coating with the colloidal lacquer (KL) and the placement of nanoparticles (NP). Therefore, they preferably follow the rotation speed curve or time curve of the coating amount of the colloidal lacquer (KL).

[0043] exist Figure 3 , exemplary steps of a coating process are schematically shown in simplified form. Figure 3 The relevant exemplary coating process in begins with the start of the coating process (1). Then, (2) a planar substrate (Sub), preferably a semiconductor substrate, such as a wafer, is provided, and (3) the colloidal lacquer (KL) in the form of a colloidal solution of nanoparticles (NP) in a carrier material (TM) and possible additional solvents (LM) is provided. The provision (2) of the planar substrate (Sub) and the provision (3) of the colloidal lacquer (KM) can be carried out in any order, sequentially or simultaneously. In the example of placing nanoparticles (NP) with color centers (FZ) as functional nanoparticle elements, at least some, preferably all nanoparticles (NP) should have functional elements. In the case of placing nanocrystals as nanoparticles (NP), and in the case of color centers (FZ), all nanocrystals should have matching color centers (FZ). In the case of placing nanodiamonds as nanoparticles (NP), all nanodiamonds should have color centers (FZ), such as NV centers and / or H3 centers.

[0044] Most preferably, all nanoparticles (NP) should have the same number of identical functional elements. In the case of nanocrystals placed as nanoparticles (NP), and in the case of color centers (FZ), all nanocrystals should very particularly preferably have the same number and type of color centers (FZ). In the case of nanodiamonds placed as nanoparticles (NP), all nanodiamonds should have the same number of color centers (FZ), for example NV centers and / or H3 centers.

[0045] Most preferably, all nanoparticles (NP) should have exactly one functional element. An overall structure consisting of several substructures forming a functional element can be understood as a functional element. For example, there can be several quantum dots that can be entangled with each other or coupled in other ways. For example, these quantum dots can be color centers. In the case of placing nanocrystals as nanoparticles (NP), and in the case of color centers (FZ), it is useful if all nanocrystals have exactly one color center (FZ). In the case of placing nanodiamonds as nanoparticles (NP), this means that all nanodiamonds have, for example, exactly one NV center or one H3 center.

[0046] The colloidal lacquer (KL) is later structured and hardened to form a structured colloidal film (FM) on the planar substrate (Sub). In order for the colloidal film (FM) to adhere to the surface of the planar substrate (Sub) later, the colloidal lacquer (KL) of the functional nanoparticles (NP) should be able to wet at least a portion of the planar substrate (Sub). This can be controlled in a known manner, for example, by one or more optional preliminary plasma treatments (5) using hydrogen or oxygen, etc. It is also possible to modulate the wettability of the surface (wetting versus non-wetting) in this area by photolithography (4) prior to the plasma treatment. For this purpose, before the plasma treatment (5), for example, in the photolithography (4) step, some surface areas are selectively covered with photoresist, while other areas to be treated are not covered with photoresist, so that they are exposed to the plasma. It is therefore conceivable that this modulation of wettability will be an additional working step in the form of a further optional photolithography (4) (see Figure 3 ).

[0047] After the plasma treatment ( 5 ), the cover lacquer ( 6 ) is usually removed again if the photolithography ( 4 ) step was previously carried out.

[0048] Then, the planar substrate (Sub) is painted (7) with a colloidal lacquer (KL) of nanoparticles (NP) so as to obtain a colloidal film (FM) on the surface (OF) of the planar substrate (Sub) (see also Figure 2 ). This is done, for example, by spraying and / or spraying and / or printing the previously produced gel lacquer (KL).

[0049] Generally speaking, the colloidal lacquer (KL) containing nanocrystalline nanoparticles (NP) will then harden into a colloidal film (FM) (8), making it mechanically stable enough to be further processed, but it can also be structured by other subsequent processing steps. This structuring (9) of the colloidal film (FM) is usually preferably implemented using photolithography. This structuring (9) is not absolutely necessary. In some applications, it may be sufficient to apply the colloidal lacquer (KL) using one of the coating methods, that is, to implement coating (7), and then directly harden the colloidal lacquer (KL) completely (10). In addition to the photolithography process, it is also conceivable to carry out structuring (9) by micromechanical processes (scratching, milling). Excimer lasers and particle beams such as electron and / or ion beams can also be used for structuring. The carrier material (TM) of the colloidal lacquer (KL) or the colloidal film (FM) produced therefrom is itself a photoresist material, so the colloidal lacquer (KL) is a photoresist, or a photoresist is applied to the colloidal lacquer (KL) as a covering layer. In the latter case, the photoresist should be chosen such that it can be structured selectively towards the gel lacquer (KL) or towards the gel film (FM), and the gel lacquer (KM) or the gel film (FM) can be structured selectively towards the photoresist.

[0050] However, the variant of the colloid lacquer (KL) with a suitable photosensitive carrier material (TM), for example a suitable photosensitive polyimide, is preferred.

[0051] The glue lacquer (KL) is then preferably structured photolithographically or micromechanically (9) to form the glue film (FM). After the structuring (9), the glue film (FM) is usually finally hardened (10).

[0052] Using the proposed method, arbitrary and functional nanoparticles (NPs) can therefore be placed specifically locally on a wafer, in particular on a CMOS wafer or a BICMOS wafer or a bipolar wafer or a planar glass wafer or a plastic wafer.

[0053] Preferred properties of nanoparticles (NPs)

[0054] Particularly preferably, the nanoparticles (ND) are nanocrystals having a crystal size of less than 1 μm and / or less than 500 nm and / or less than 250 nm and / or less than 100 nm and / or less than 50 nm and / or less than 25 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2.5 nm and / or less than 1 nm.

[0055] Very particular preference is given to using diamond nanocrystals and / or Si nanocrystals.

[0056] The nanoparticles (NP) preferably have a functional element. The functional element is preferably a color center (FZ) which is suitable and intended for the purpose-defined electromagnetic radiation and / or defined electromagnetic field, in particular to interact by absorption and / or radiation.

[0057] In the case of nanodiamonds as nanoparticles (NPs), the at least one color center (FZ) is preferably an NV center (NV) or an H3 center or a SiV center in a diamond nanocrystal.

[0058] It is useful to mix different types of nanoparticles. For example, this is useful if some of the nanoparticles are ferromagnetic or have ferromagnetic sub-devices.

[0059] Nanocrystals as nanoparticles (NP) can have several color centers (FZ) of the same or different types. Each nanocrystal preferably has at least one suitable color center (FZ). Better yet, each nanocrystal has exactly at least one suitable color center (FZ). Better yet, each nanocrystal has exactly at least one suitable color center (FZ) of one color center type. Better yet, each nanocrystal has exactly at least one suitable color center (FZ) of one color center type, and no color centers of other color center types. Better yet, all nanocrystals have exactly one suitable color center (FZ) of the first color center type, and no color centers of other color center types. However, these are not mandatory requirements. Here, the color center type is understood to refer to a specific atomic structure of a color center in a crystal, such as an NV center in diamond or an SiV center in diamond or an H3 center in diamond.

[0060] It is also conceivable to use nanocrystals made of III / V materials and / or II / VI materials and / or direct semiconductor materials or mixtures of the above materials as nanoparticles (NP). The potential single-frequency single-photon excitation capability of electromagnetic functional elements (e.g. paramagnetic centers) of such nanoparticles (NP) can be understood as color centers (FZ).

[0061] In this regard, the nanoparticles (NP) can also be electromagnetically interacting nanostructures, such as nanomechanical electromagnetic and / or electromechanical resonators and / or antenna structures with a resonant frequency that can be electromagnetically excited by a single photon. In extreme cases, they can also be point, line or surface crystal defects. The method here is a method for placing single functional nanoparticles (NP) in nanoscopic dust in a directional and spatially resolved manner on a planar substrate (Sub).

[0062] Production process of prefabricated nanoparticles (NPs)

[0063] Figure 4An exemplary method for producing prefabricated diamond nanoparticles (ND) is shown as an example for the microtechnological production of functional nanoparticles (NP). In principle, the process can be transferred to materials other than silicon as wafer material if appropriate etchants are employed.

[0064] First, a deposition substrate (W) is provided, such as a silicon wafer ( Figure 4 a). Depositing a functional layer, such as a diamond layer ( Figure 4 b). According to the prior art, various methods for depositing diamond layers, for example by CVD methods, are known, so that no further explanation is necessary here. As an example, reference is made here to the book Koji Kobashi, "Diamond Films: Chemical Vapor Deposition for Oriented and Heteroepitaxial Growth", Elsevier Science, November 30, 2005, ISBN 9780080447230.

[0065] Preferably, a treatment step for reducing the hydrogen concentration is implemented in this treatment in order to remove excess hydrogen from the diamond layer deposited by CVD. Preferably, the heat treatment is carried out at high temperature and preferably at high pressure. Very particularly preferably, this is carried out periodically during deposition with the deposition in order to negate the low diffusion rate in the diamond. The diamond layer is usually deposited in the presence of hydrogen, which prevents the formation of NV centers in the diamond. Due to the cyclic deposition, hydrogen can diffuse out of a few deposited layers and leave the layer despite the low diffusion rate. In this way, the hydrogen content can be reduced.

[0066] It has also been proposed to dope the diamond layer with dopants to increase the NV centre yield. For example, sulfur doping of the diamond layer is contemplated herein. Doping can be performed during deposition and / or by ion implantation.

[0067] The diamond layer preferably has a predetermined crystal orientation. With regard to the growth of the pre-oriented diamond layer, reference is made to the prior art.

[0068] The diamond layer is preferably an isotopically pure diamond layer in order to maintain the interaction between the NV center and the diamond lattice in a predetermined ratio. Preferably, the isotopically pure diamond layer is composed of 12 C carbon, or alternatively 13 C carbon, or alternatively 14 Isotopically pure means that the isotope in question is predominant and that the concentrations of the other carbon isotopes are reduced by at least a factor of 10 compared to their proportions in natural carbon deposits.

[0069] After a suitable functional layer (D) has been deposited, for example by separate ion implantation, color centers (FZ) are then produced in the functional layer (D) at preferably predetermined locations.

[0070] As exemplary documents in this regard, mention may be made of:

[0071] Burchard B., Meijer J., Rangelow I., Bischoff L.; "NM Scale Resolution Single Ion Implantation Into Diamond for Quantum Dot Production" 15th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide (DIAMOND 2004), At 12-17 September 2004 Riva del Garda, Italy;

[0072] Meijer, J, Rangelow, I., Burchard, B.; "A Set Up for Quantum Dot Generation by Means of Ultra High Resolution Single Ion Implantation" WE_Heraeus-Seminar, Bad Honnef, Germany 13.-15.Oct.2003;

[0073] Meijer, J., Pezzagna, S., Vogel, T., Burchard, B., Bukow, H. H., Rangelow, I. W., Sarov, Y., Wiggers, H., Plümel, I., Jelezko, F., Wrachtrup, J., Schmidt-Kaler, F., Schnitzler, W., Singer, K., "Towards the implanting of ions and positioning of nanoparticles with nm spatial resolution", Appl. Phys. A 91, 567-571 (2008).

[0074] In the final step, the functional nanoparticles (NP) are separated from the deposition substrate (W) ( Figure 4 e).

[0075] exist Figure 4 In the method, the nanoparticles (NP) are preferably made into nanocrystals having a fixed crystal orientation relative to the surface of the deposition substrate (W).

[0076] Thus, the nanoparticles (NPs) preferably do not have a completely symmetrical structure, but rather have reduced or absent symmetry.

[0077] For example, if nanodiamonds are made into nanoparticles (NPs) in this way, NV centers can be made into color centers (FZs). Their optical, electromagnetic and quantum mechanical properties depend on the crystal orientation. For example, it makes sense if the

[111] orientation of the nanodiamond after assembly is consistent with the direction of the pointing vector of the radiated electromagnetic field and / or the direction of the flux density B of the external electromagnetic field. For this purpose, it makes sense to provide nanoparticles (NPs), here for example nanodiamonds, with a suitable mechanical shape so that they are arranged in a predetermined manner on the surface of a later target substrate (planar substrate (Sub)).

[0078] There are also various other methods for producing exemplary diamond nanocrystals as nanoparticles (NPs) having exemplary NV centers as color centers (FZs). As an example, the following text is noted:

[0079] Xerui Song, GuanzHong Wang, Xiaodi Lui, Fupan Feng, “Generation of nitrogen-vacancy color center in nano-diamonds by high temperature annealing”, Applied Physics Letters 102(13), April 2013;

[0080] Taras Plakhotnik and Haroon Aman, “NV-centers in Nano-diamonds: How good they are,” Diamond and Related Materials 82, December 2017.

[0081] Bradley R. Smith, David W. Inglis, Bjomar Sandness, Taras Plakhotnik, “Five-Nanometer Diamond with Luminescent Nitrogen-Vacancy Defect Centers,” Small 5(14):1649-1653; March 2009;

[0082] "Photoluminescence of color centers in nanodiamonds" in "Nanodiamonds", p. 155-181;

[0083] Huang-Cheng Chang, Wesley Wie-Wen Hsiao, "Fluorescent Nanodiamonds", Wiley; edition: 1 (12. September 2018);

[0084] Jean-Charles Arnault, “Nanodiamonds: Advanced Material Analysis, Properties and Applications (Micro and Nano Technologies),” Elsevier; edition: 1 (25.April 2017);

[0085] Vadym N. Mochalin, Yury Gogotsi, “Nanodiamond-polymer composites” Diamond & Related Materials 58 (2015) 161-171.

[0086] The above list is not exhaustive. None of the above documents deals with the mounting of nanocrystals in micro-optical systems or MOS circuits or CMOS circuits or BICMOS circuits or bipolar circuits or in thick film systems on planar glass, ceramic or plastic substrates, which is the main obstacle to mass production.

[0087] Figure 5 Another process is shown: a deposition substrate (W) is provided, for example made of diamond, without further structuring, as a single-crystal diamond wafer or a polycrystalline diamond wafer ( Figure 5 a). The diamond wafer is preferably an isotopically pure diamond wafer. Alternatively, the diamond wafer may also have other carbon isotopes in a reduced proportion.

[0088] Then, a color center (FZ), such as an NV center ( Figure 5 c). This can be done, for example, by ion implantation of nitrogen and subsequent temperature treatment. Then, for example, structuring is carried out by photolithography and RIE plasma etching ( Figure 5 d). In the final step, the nanoparticles (NP) (here, exemplary nanodiamonds) are separated from the deposition substrate (W), for example, by undercutting. For example, a silicon wafer or the like may also be used as the deposition substrate (W) instead of a diamond substrate.

[0089] Nanoscopic objects as nanoparticles (NPs)

[0090] When developing the present invention, it was recognized that the placement of nanoscopic objects is often a problem. Since functional properties, especially quantum optical properties, depend on the orientation within the nanoparticle (NP), it is not only about placing the nanoscopic object at a certain location, such as on a wafer with a large number of photonic systems, but also about aligning the nanoscopic object used as a nanoparticle (NP). For this purpose, it is beneficial if the outline of the nanoparticle (NP) and the crystal structure of the material of the nanoparticle (NP) are defined relative to the outline of the nanoparticle (NP).

[0091] Due to the asymmetric profile of the nanoparticles (NP), it is possible to coat the nanoparticles (NP) with a colloidal lacquer (KL) (see Figure 2 ) during the period of achieving the preferred attachment direction of the nanoparticles (NP) on the microfluidic structure on the planar substrate (Sub). This will be described in detail later.

[0092] Microfluidic functional elements support the placement of nanoparticles (NPs)

[0093] In the process of implementing the present invention, the first thing to do is to use a spin coater (SC) commonly found in microtechnology. It is recognized that the course of the colloid lacquer (KL) during spin coating of the colloid lacquer (KL) can be controlled by a microfluidic structure on a planar substrate (Sub).

[0094] Figure 6 An exemplary microfluidic structure is shown that supports the placement and (if necessary) alignment of nanoparticles (NPs) during coating of a planar substrate (Sub) with a colloidal lacquer (KL).

[0095] The microfluidic structure consists of a first partial structure, namely a guide structure (LS), the purpose of which is to capture a predetermined amount of nanoparticles (NP) within the colloidal paint (KL) while flowing during the painting process and to guide them in the direction of the capture structure (FS) of the nanoparticles (NP).

[0096] The guide structure (LS) is characterized in that it does not prevent the movement of the nanoparticles (NP), but rather guides them to the target. Therefore, during coating, the guide structure should be aligned with the lacquer flow direction (FR) of the colloidal lacquer (K1). In the case of a rotationally symmetrical wafer as a flat substrate (Sub), the symmetry axis (SA) preferably present should be oriented toward the rotation axis (RA) of the spin coater (SC) (see also Figure 1 ). Therefore, it is reasonable to produce these microfluidic structures not by exposing the photoresist using a photolithography machine but by exposing the photoresist using a whole wafer mask and a light source with an optical device.

[0097] exist Figure 6In the example of , the guide structure (LS) consists of two grooves, which are preferably produced by microstructuring on the flat substrate (Sub) before coating with a colloidal lacquer (KL). It is possible that the flat substrate (Sub) is polished before making these microfluidic functional elements (LS, FS, FS1, FS2).

[0098] For example, if it is a CMOS wafer or a BICMOS wafer or a bipolar wafer or a flat glass, ceramic or plastic wafer, it makes sense to polish the wafer using CMP, for example before producing the microfluidic functional elements (LS, FS, FS1, FS2).

[0099] exist Figure 6 In the example of , the microfluidic structure has as a second partial structure a capture structure (FS) which has a plurality of substructures (FS1, FS2) located at the bottom and has the task of fixing at least one nanoparticle (NP) if possible. Figure 6 In the example of , this is accomplished by a first sub-capturing structure (FS1) which reduces the likelihood of the nanoparticles (NP) escaping once captured. Figure 6 This is an example of a spring structure that protrudes from the surface of a planar substrate (Sub). Figure 6 In the example of FIG. 5 , the first sub-capturing structure ( FS1 ) forms a U-shaped cup which is open towards the guiding structure (LS).

[0100] In addition to the first sub-capture structure (FS1), Figure 1 In the example, the trapping structure (FS) further has as an example a second sub-trapping structure, which is formed, for example, by etching an exemplary groove (FS2) in the surface of the planar substrate (Sub).

[0101] Local Figure 6 a is a schematic simplified plan view of an exemplary microfluidic structure. Figure 6 b means along Figure 6 Schematic simplified section of line AB. Figure 6 c means along Figure 6 Schematic simplified cross section of line A'-B' of a.

[0102] Thus, for example, if aligned according to the paint flow direction (FR), ribs tapering towards the edge as a guide structure (LS) result in an increased probability that the nanoparticles (NP) are placed in a recess of a second sub-capture structure (FS2) in the surface of a planar substrate (Sub) at the end of the structure.

[0103] Since these catching structures (FS) and guiding structures (LS) should preferably be aligned symmetrically with respect to the center of the generally circular wafer, which center should be identical to the axis of rotation (RA) of the spin coater (SC), particular difficulties arise in production, since the centrifugal forces have this rotational symmetry. Figure 6 The structure of Figure 7 The figures are shown by way of example and not to scale, for illustration purposes only and are shown in principle in a very simplified manner for the purpose of explanation.

[0104] This rotationally symmetrical arrangement means that during the production of at least the microfluidic structures (capturing structures FS and guide structures LS), the wafer (flat substrate Sub) has to be rotated during exposure in the lithography machine, which requires special lithography machines and is very expensive. A cheap alternative is to use a whole wafer mask, as it is still common in many places in micromechanical production. This is particularly useful because the microfluidic structures are usually quite macroscopic in the μm range anyway. The microfluidic functional elements (FS, LS, FS1, FS2) control the varnish flow of the colloidal varnish (KL) and thus control the coating (e.g. Figure 2 ) during the movement of nanoparticles (NPs).

[0105] Therefore, during the painting or coating and / or local wetting of the planar substrate (Sub) with a colloidal lacquer (KL) with a nanoparticle (NP), at least one of the microfluidic functional elements (FS, LS, FS1, FS2) is preferably provided and / or suitable for mechanical or fluid-mechanical interaction in order to ultimately influence their placement and, if necessary, alignment. Of course, it is conceivable to provide other microfluidic functional elements, which may have nothing to do with the manufacturing process, but, for example, only take over the function during the later operation of the system. For example, this is useful in medical applications of systems for controlling body fluids, etc. It makes sense to manufacture other microfluidic functional elements at least partially together with the microfluidic functional elements (FS, LS, FS1, FS2) provided for the placement of nanoparticles (NP).

[0106] As already mentioned, in terms of process sequence, it is usually, but not always, advantageous to manufacture any microelectronic circuit parts to be manufactured in the planar substrate (Sub) before the microfluidic functional elements (FS, LS, FS1, FS2). This also generally applies to micro-optical functional elements.

[0107] Preferred properties of planar substrates (Sub)

[0108] The planar substrate (Sub) preferably comprises a semiconductor wafer and / or other semiconductor substrates and / or a silicon wafer and / or a GaAs wafer and / or a wafer made of IV material and / or a wafer made of III / V material and / or a wafer made of II / VI material and / or a wafer made of a mixture of these materials and / or a germanium wafer and / or a single crystal diamond wafer or a polycrystalline diamond wafer and / or a glass wafer and / or a ceramic wafer and / or a metal sheet and / or a plastic plate. The planar substrate (Sub) is preferably at least partially semiconductive.

[0109] Possibly, these may be wafers which are stacked to a wafer package by gluing or the like and structured in a photolithographic or similar manner.

[0110] The planar substrate (Sub) preferably comprises a microintegrated circuit. Therefore, the planar substrate (Sub) is preferably at least partially semiconductive.

[0111] Therefore, for the technology disclosed here, it is particularly beneficial if the method for producing electronic components is already applied to the semiconductor substrate and / or the method for producing electronic MOS or CMOS or BICMOS or bipolar components is implemented on the semiconductor substrate before the introduction of the nanoparticles (NPs).

[0112] Therefore, the planar substrate (Sub) is preferably a MOS, CMOS or BICMOS wafer or a wafer manufactured using bipolar technology, and the planar substrate has a microelectronic circuit that controls a light source and / or a photosensitive component (such as a photodiode) for detecting the luminescence of the color center (NV) and / or evaluates the measurement signal of the photosensitive component. The electronic circuit in the sense of the present disclosure includes the interconnection of at least two microelectronic components manufactured in the planar substrate (Sub). The microelectronic circuit preferably includes at least one transistor as a microelectronic component. The transistor is preferably a MOS transistor. Preferably, the microelectronic circuit includes at least one transistor, such as an N-channel MOS transistor or an NPN bipolar transistor, and includes at least one transistor complementary thereto, such as a P-channel transistor or a PNP transistor, and then the two transistors are part of the same microelectronic circuit, and then the two transistors are manufactured in the planar substrate (Sub).

[0113] For example, the planar substrate (Sub) can also be a MEMS wafer having at least one micromechanical and / or microelectromechanical functional element, such as a diaphragm and / or a cantilever (= beam or carrier). The planar substrate (Sub) can also be a co-integrated CMOS-MEMS wafer and / or BICMOS-MEMS wafer or a bipolar wafer, and the devices made therefrom, usually referred to as chips, therefore comprise microelectronic circuits, such as MOS or CMOS or BICMOS or bipolar circuits, and comprise micromechanical functional elements. Therefore, such a chip preferably has nanoparticles (ND) firmly connected to the planar substrate (Sub) by fastening means, such as a solidified carrier material (TM). The nanoparticles (ND) preferably have said paramagnetic centers, such as one or more NV centers in diamond. Preferably, the micro-optical functional element is manufactured in a planar substrate (Sub) or is firmly connected to a planar substrate (Sub), particularly preferably, the optical waveguide is manufactured in a planar substrate (Sub) or is firmly connected to a planar substrate (Sub), the planar substrate preferably having paramagnetic centers of nanoparticles (ND) and a light-emitting component of a microintegrated circuit, the light-emitting component is, for example, a MESA structure (MS) described later, the MESA structure is preferably manufactured in or on a planar substrate and / or optically coupled to a photosensitive microelectronic component of the microintegrated circuit, for example a photosensitive PN diode (pG, nG). The microelectronic circuit can be supplemented by other micro-optical functional elements.

[0114] Exemplary MOS system or CMOS system or BICMOS system or bipolar system with nanoparticles (NPs)

[0115] Figure 8A cross section of an exemplary system is schematically shown in a roughly simplified manner in order to clarify what has been proposed previously. The basis of the exemplary device is a planar substrate (Sub). For the sake of clarity, it is intended to be, for example, a silicon wafer workpiece (commonly referred to as a chip or die) with p-type conductivity, as in the currently common MOS and CMOS and BICMOS and bipolar technologies. Here, of course, this explanation also applies to bipolar technology. Before the introduction of nanoparticles (NP), a MOS or CMOS or BICMOS or bipolar process is implemented on a silicon wafer for an exemplary planar substrate (Sub). Microelectronic circuits are produced on silicon wafers by this process, and the silicon wafers are converted into MOS wafers or CMOS wafers or BICMOS wafers or bipolar wafers, respectively. Symbolically, for such microelectronic circuits, a single exemplary MOS transistor is schematically shown in a simplified form. Here, bipolar transistors or similar components such as thyristors can also be thought of. This simplified representation is intended to ensure that the basic principles are clear without confusing the details. The simplified representation is intended to express the co-integration of microelectronic circuits with nanoparticles (NPs) having one paramagnetic center or multiple paramagnetic centers, indicating some paths. Due to the complexity of the required demonstration, the functionality cannot be shown here.

[0116] In this example, the MOS transistor shown as an example includes an N well (NW) in a planar P substrate (Sub). The exemplary MOS transistor shown has a source region (Sr), a drain region (Dr), a source contact (SrK) for contacting the source region (Sr), a drain contact (DrK) for contacting the drain region (Dr), a gate oxide layer (GOX), a field oxide layer (FOX), a capping oxide layer (AOX) and a gate (GA). Above these microelectronic components is a metallization stack of a microintegrated circuit represented by a second metal layer (M2L), which is electrically insulated from top to bottom and structured. In practice, MOS, CMOS, BICMOS and bipolar structures are inherently more complex. For example, they typically include multiple layers of metal and polysilicon. Therefore, it is based on relevant prior art regarding microelectronic circuits. For illustration Figure 8 The structure of the device in includes an exemplary micro-optical member in the form of an exemplary fiber optical waveguide structure (LWL1, LWL2). Figure 8 In the illustrative example of, these are intended to interact with color centers (FZ) and nanoparticles (NP). The nanoparticles (NP) can preferably be nanodiamonds with NV centers as color centers (FZ). The nanoparticles (NP) have been placed in the grooves of the second capture structure (FS2) by means of a guiding structure (LS) and a first capture structure (FS1). A colloidal lacquer (KL) covers the device surface in the region of the guiding structure (LS) and in the region of the capture structures (FS1, FS2) to fix the position of the nanoparticles (NP) in the grooves of the second capture structure (FS2).

[0117] After curing, the carrier material (TM) of the colloidal lacquer (KL) must be sufficiently transparent for the radiation of the color centers (FZ) used and, if necessary, the pump radiation of the pump light source. The second trapping structure (FS2) is preferably filled with the carrier material (TM) of the colloidal lacquer (KL). Figure 8 In the example of , the layer of glue-like lacquer (KL) has been photolithographically limited to the area of ​​the trapping structure (FS) and the guide structure (LS). This has the advantage that, for example, the electrical contacts of the integrated circuit can preferably be exposed again more easily.

[0118] The exemplary device described here for illustration has a first optical light waveguide structure (LWL1), the material of which can be, for example, sputtered SiO2 material or other transparent oxide material that has been applied to the surface of a planar substrate (Sub). Preferably, light emission into other areas of the circuit is prevented in advance by a first part (uMS1) of a first metal barrier facing downwards towards the substrate (Sub). The first optical light waveguide structure (LWL1) is preferably structured photolithographically and, for example, covered on top with a first part (oMS1) of a second metal barrier. It is recommended to accurately simulate the machinability of such a construction using FDTD simulations for the process parameters used before manufacturing, because if the dimensions are too small, light propagation may no longer occur. The second optical light waveguide structure (LWL2) is manufactured in the same way, which is preferably surrounded by a second part (uMS2) of the first metal barrier and a second part (oMS2) of the second metal barrier.

[0119] exist Figure 8 In the example of , an exemplary light source is provided. This consists of an exemplary MESA structure (MS), which is preferably and insulated from a planar substrate, for example. A light emitting region (LG) is manufactured in this light generating structure. In this context, reference is made to the following literature on the production of light sources in indirect semiconductors such as silicon:

[0120] H., Meijer J., Stephan A., Weidenmüller U., Bukow HH, Rolfs C. "White electroluminescent nanostructure in silicon fabricated using focusedion implantation" Nuclear Instruments and Methods in Physics Research B 181 (1001) pages 274-279.

[0121] exist Figure 8 In the example of FIG. 1 , such a light source having a light emitting region (LG) is used to pump a color center (FZ) in a nanoparticle (NP) via a first optical light guide (LWL1). The color center then emits characteristic light that is collected by a second optical light guide (LWL2) and directed to a photosensitive component (pG, nG) of a microelectronic circuit.

[0122] The exemplary photosensitive member (pG, nG) in this illustrative example is composed of a PN diode including an N well (nG) and a P cathode (pG).

[0123] According to the prior art, a variety of photosensitive microelectronic components are known, which can be manufactured in particular using the aforementioned MOS, CMOS, BICMOS and bipolar processes. In order to maintain low complexity and transparency of the representation, Figure 8 It has been simplified to the extent that a person skilled in the art can recognize which exemplary elements can be combined and how they can be combined and how they interact. A variety of microfluidic, micromechanical, microoptical and microelectronic functional elements known from the prior art can also be combined in similar devices using the methods proposed here. For example, Bragg filters and mirror structures can be arranged in optical waveguides.

[0124] Therefore, the system preferably comprises a microelectronic circuit or at least one microelectronic component, in particular a photodetector and / or a light emitting component. More specifically, the system preferably comprises a microelectronic MOS, CMOS, BICMOS or bipolar circuit or at least one microelectronic MOS or CMOS or BICMOS or bipolar component, in particular a photodetector and / or a light emitting component. In the case of CMOS technology, it is preferably a CMOS photodetector, such as a CCD pixel or a CCD pixel array and / or a light emitting CMOS component, the CMOS component being characterized in that it is manufactured using CMOS technology. The microelectronic circuit is preferably manufactured at least partially using MOS or CMOS or BICMOS or bipolar technology.

[0125] The microelectronic circuit preferably also comprises, for example, a voltage regulator for supplying power to the microelectronic circuit and, if applicable, to its subcomponents and / or to a pump light source for exciting the photoluminescence of the color center. However, a suitable micro-optical system must be able to excite the color center (FZ) on the one hand and to detect the light emitted by the color center (FZ) on the other hand and to reliably separate it from the light of the pump light source. For this purpose, it is meaningful if the micro-electro-optical system has micro-optical components which are produced in a microtechnological manner in corresponding process steps. Optical filters and fiber-optic optical waveguides are particularly important here.

[0126] In this regard, the books Baha EA Saleh, Malvin Carl Teich, “Grundlagen der Photonik” (English: “Fundamentals of Photonics”) Wiley-VCH, 2007 and Bernhard C. Kress, Patrick Meyreueis “Applied Digital Optics” Wiley, 2009 indicate.

[0127] The proposed method therefore preferably comprises steps for carrying out a method for producing a micro-optical component on a semiconductor substrate.

[0128] On the co-integration of suitable light-emitting components

[0129] As already pointed out, light emitting components present a special problem.

[0130] A material made of a semiconductor having a direct transition, such as GaAs or other suitable III / V materials, is used as a semiconductor substrate, whereby a light-emitting member for generating pump light for exciting color centers can be directly manufactured on a wafer, or a material made of a semiconductor having an indirect transition, such as silicon or diamond, is used as a semiconductor substrate. With regard to generating a light source in diamond, the following documents are referred to here:

[0131] Burchard B., “Elektronische und optoelektronische Bauelemente und Bauelementstructuren on a diamond basis” (English: “Electronic and optoelectronic components and component structures based on diamonds”) Dissertation, Hagen 1994.

[0132] With regard to the generation of light sources in silicon, reference should be made to the following magazine articles already mentioned:

[0133] H., Meijer J., Stephan A., Weidenmüller U., Bukow HH, Rolfs C., "White electroluminescent nanostructure in silicon fabricated using focusedion implantation", Nuclear Instruments and Methods in Physics Research B 181 (1001) pages 274-279.

[0134] It discusses a PNP or NPN-MESA structure in which the average doping is extremely high and very narrow. The author believes that this is a component in the avalanche breakdown. Hot electrons emit light energy in the form of a thermal spectrum. In the case of the NPN structure, the microelectronic circuit applies a very high voltage between the contact of the first N region and the contact of the second N region. This is a breakthrough. The breakdown of the base-collector diode injects current into the base. The extremely highly doped and very narrow base becomes conductive, so that the transistor turns on suddenly and extremely quickly. The base-collector capacitance part close to the PN junction is suddenly discharged. This leads to the generation of electromagnetic waves in the base, which are focused by the high doping and the resulting jump in the refractive index. If the "+" symbolizes high doping, then PN is recommended here + P structure or NP + N structure. In particular, so-called silicon avalanche-based light-emitting diodes are known from the literature that do something similar (K. Kurokawa, "Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes", January 2000 Materials Science Forum 338-342: 691-694, DOI: 10.4028 / www.scientific.net / MSF.338-342.691).

[0135] In this PN + P structure or NP +A quantum technology, micro-electro-optical, photonic or microelectronic system manufactured in MOS, CMOS, BICMOS or bipolar technology or other suitable wafer manufacturing technology is used on the basis of a silicon avalanche based light emitting diode or a PN structure. Therefore, the system comprises a substrate (Sub), which can be manufactured in particular from an indirect semiconductor such as silicon and has a surface (OF). The substrate (Sub) preferably has a silicon avalanche based light emitting diode or a PN structure for generating light. + P structure or NP + N structure or semiconductor MESA structure (MESA). These are based on silicon avalanche light emitting diodes, PN + P structure, NP + The N-structure or semiconductor MESA structure (MESA) is used as a light-emitting microelectronic component, which can be used, for example, as a pump light source for a color center. The MESA structure is preferably insulated from the substrate and has a first region (E) of the MESA structure (MESA), a second region (B) of the MESA structure (MESA) and a third region (C) of the MESA structure (MESA). The quantum technology, micro-electro-optical, photonic or microelectronic system has at least one nanoparticle (NP), preferably several nanoparticles (NP), which have at least one, preferably identical, color center (FZ), but preferably a plurality of, preferably identical, color centers (FZ).

[0136] At least one micro-optical functional element, in particular an optical light waveguide (LWL2), manufactured in a substrate (Sub) or on a surface (OF) of the substrate (Sub), preferably couples the light-emitting member located in or on the substrate (Sub) with one or more color centers so that they can be pumped or otherwise optically manipulated. For the purposes of this document, the substrate (Sub) includes the micro-optical functional element (LWL2). In this case, the light waveguide is firmly connected to the substrate over all or most of its longitudinal extension. The first region (E) and the third region (C) of the MESA structure that can be used preferably have a first conductivity type. The second region (B) of the MESA structure that may be used preferably has a second conductivity type different from the first conductivity type, and the second region (B) is arranged between the first region (E) and the second region (C). The MESA structure (MESA) is preferably a PNP or NPN MESA structure, and the width of the second region (B) is preferably less than 3 μm and / or less than 1 μm and / or less than 500 nm and / or less than 200 nm and / or less than 100 nm and / or less than 50 nm and / or less than 25 nm and / or less than 10 nm. If the doping is high enough, the second region (B) is suitable for emitting light when a sufficiently high voltage is applied. The coupling with the optical functional element proves that the MESA structure is intended to emit light. The light emitted by the second region (B) interacts with the color center (FZ) of the nanoparticle (NP) through the micro-optical functional element (LWL2).

[0137] Another possibility is to manufacture the light source as, for example, a nanoscopic LED and place them in a separate working step like nanoparticles (NP). In the document presented here, such very small light-emitting diodes or PN junctions (LEDs) are explicitly included if their crystals have a suitably small size after these components have been separated from the wafer assembly.

[0138] In the following, such LEDs are referred to as nanoscopic LEDs or nano-LEDs.

[0139] Therefore, these nano-LEDs are nanoparticles (NPs), preferably nanocrystals, with a particle size of less than 1 μm and / or better less than 500 nm and / or better less than 250 nm and / or better less than 100 nm and / or better less than 50 nm and / or better less than 25 nm and / or better less than 10 nm and / or better less than 5 nm and / or better less than 2.5 nm and / or less than 1 nm. Therefore, in an ideal case, it can be said to be LED dust. According to the present invention, it is recognized that LED dust is particularly suitable for the construction of photonic systems.

[0140] Therefore, in a variant of the method, it is proposed to implement a method of assembling a light-emitting member on a semiconductor substrate, and placing the nanoscopic LEDs by means of a colloidal lacquer (KL) comprising such nanoscopic LEDs as particles is also such a manufacturing step. During the manufacturing process, the colloidal lacquer (KL) is converted into a colloidal film (FM) fixing the nanoscopic LEDs.

[0141] The planar substrate (Sub) is preferably a semiconductor substrate or a silicon wafer or a GaAs wafer or a wafer made of III / V materials or a wafer made of II / VI materials or a wafer processed by bandgap engineering or a diamond wafer or a Ge wafer or other wafers made of hybrid semiconductors or parts of these wafers.

[0142] Therefore, in the present disclosure, quantum technology, micro-electro-optical or photonic systems are proposed, which include a planar substrate (Sub), in particular a semiconductor substrate. The proposal here is special in that, in addition to the nanoparticles, the entire system can be made of indirect semiconductor materials. Microelectronic circuits, preferably using MOS, CMOS, BICMOS or bipolar technology, are usually manufactured in and / or on semiconductor materials. The microelectronic circuits here preferably include a plurality of components such as transistors, diodes, resistors, capacitors, photosensitive electronic components and possibly luminous electronic components.

[0143] For example, such a photosensitive component of the microelectronic circuit for detecting the fluorescence of the color center of a nanoparticle (NP), which is preferably a diamond with an NV center, can be, for example, a PN diode as a photosensitive electronic component (nG, pG), which is part of the microelectronic circuit. For example, the luminescent component can be a MESA structure as described here. Quantum technology, micro-electro-optics or photonic systems preferably include a partial area of ​​a colloidal film (FM) or a colloidal lacquer (KL) with at least one nanoparticle (NP) with a color center (FZ) (see Figure 8). It is useful if the quantum technology, micro-electro-optics or photonic system preferably comprises at least a partial region of a colloidal film (FM) or colloidal paint (KL) having one or more nanoparticles, which are ferromagnetic or have ferromagnetic sub-devices and, if necessary, can interact with the color center of the nanoparticle (NP) by a magnetic field. Preferably, one or more sub-regions of the optional several colloidal films (FM) are produced by one of the above methods. In a preferred variant, the nanoparticles (NP) are diamond nanocrystals with a crystal size of less than 1 μm and / or better less than 500 nm and / or better less than 250 nm and / or better less than 100 nm and / or better less than 50 nm and / or better less than 25 nm and / or better less than 10 nm and / or better less than 5 nm and / or better less than 2.5 nm and / or better less than 1 nm. The color center is preferably an NV center in a diamond nanocrystal or an SiV center in a diamond nanocrystal or an H3 center in a diamond nanocrystal.

[0144] The following variant is particularly preferred: wherein the planar substrate (Sub) or semiconductor substrate is a microelectronic circuit, in particular a microelectronic circuit using MOS, CMOS, BICMOS or bipolar technology. Such a microelectronic circuit, which is usually manufactured in the planar substrate (Sub), preferably comprises a plurality of microelectronic components such as MOS transistors, bipolar transistors, diodes, resistors, capacitors, coils and possibly other semiconductor components to form the entire system, the other semiconductor components being manufactured in the planar substrate, in particular in a metallization stack, and connected by wiring to the microelectronic circuit optically coupled to the color center (= paramagnetic center) of the nanoparticle, which is preferably diamond with a color center.

[0145] The planar substrate (Sub) preferably comprises at least one micro-optical functional element, such as an optical light waveguide structure (LWL1), and comprises a microelectronic circuit using MOS, CMOS, BICMOS or bipolar technology. Typically, the planar substrate (Sub) also comprises a photosensitive electrical component (nG, pG) so that the luminescence of the color center (FZ) is preferably detected by the photosensitive electrical component (pG, nG). At least one operating parameter of the microelectronic circuit, such as the value of a control signal within the microelectronic circuit, then typically depends on the value of the fluorescence intensity of the color center (FZ) detected by the photosensitive component (pG, nG). The color center (FZ) is preferably coupled to the photosensitive electrical component (pG, nG) via the micro-optical functional element (LWL1). However, such quantum technology, micro-electro-optics, photonic or microelectronic systems can also be based on a planar substrate (Sub) made of direct semiconductor material. The advantage is that the light output of the light emitting components of the system is higher and thus better pump power can be achieved, which increases the contrast between the color center fluorescence intensity at the magnetic flux density with maximum color center fluorescence intensity and the magnetic flux density with minimum color center fluorescence intensity.

[0146] Preferably, a substrate material of a planar substrate (Sub) is used, wherein the semiconductor material of the substrate may be a III / V semiconductor material and / or a II / VI semiconductor material or a semiconductor material produced by bandgap engineering. The substrate material obviously does not need to be homogeneous, but may be composed of different materials. Then, the system comprises a microelectronic circuit as part of the substrate (Sub), an electrical component as part of the microelectronic circuit, and a micro-optical sub-device (LWL1, LWL2) as part of the substrate (Sub), and further comprises one or more nanoparticles (NP) having one or more color centers (FZ), the nanoparticles may be diamonds, and the color centers are one or more NV centers in one or more diamonds, respectively. Thus, the planar substrate (Sub) comprises the microelectronic circuit, the electrical component, and the micro-optical device (LWL1, LWL2). The special feature of the system is that it has at least one light-emitting electro-optical component (MS) manufactured as part of the substrate (Sub) or on the surface of the substrate (Sub), and the planar substrate (Sub) comprises the light-emitting component (MS), and wherein the light-emitting electro-optical component (MS) interacts optically with the micro-optical sub-device (LWL1, LWL2). The light-emitting electro-optical component (MS) electrically and / or optically interacts with the electrical component directly or indirectly through the micro-optical sub-component (LWL1, LWL2). This interaction between the light-emitting electro-optical component (MS) and the electrical component is carried out with the participation of a color center (FZ) or a plurality of color centers in the color center (FZ).

[0147] Therefore, the planar substrate (Sub) is preferably a semiconductor substrate or a silicon wafer or a GaAs wafer or a wafer made of III / V materials or a wafer made of II / VI materials or a wafer that has been processed by bandgap engineering or a diamond wafer or a Ge wafer or other wafers made of hybrid semiconductors.

[0148] In the case of III / V materials, the substrate may also include LEDs or lasers.

[0149] The quantum technology, micro-electro-optical or photonic system preferably comprises at least one micro-optical element. Preferably, the micro-optical element is suitable for or intended to fulfill at least one of the following functions of a micro-optical element:

[0150] Optical lens function and / or

[0151] · Photonic crystal functions and / or

[0152] ·Filter function and / or

[0153] Optical total or partial reflection mirror function and / or

[0154] Functionality of the fiber optic waveguide structure (LWL1, LWL2) and / or

[0155] Directional coupler functionality and / or

[0156] Wave pool (terminal) functionality and / or

[0157] Circulator function and / or

[0158] · Function of coupling and / or decoupling elements.

[0159] Color centers (FZ) usually interact with magnetic fields. Therefore, it is useful if the device includes at least one functional element of the magnetic circuit and / or a ferromagnetic sub-device or ferromagnetic sub-structure. However, it can be a microscopic or nanoscopic permanent magnet that can be selectively integrated into a metallization stack such as the MOS, CMOS, BICMOS or bipolar circuit. The ferromagnetic sub-device or sub-structure is preferably part of the magnetic circuit. In this case, quantum technology and micro-electro-optical systems are preferably characterized by an excitation device suitable for causing magnetic excitation in the magnetic circuit, such as a flat coil produced in the metallization stack. The magnetic part device is preferably manufactured by depositing a ferromagnetic layer and then performing photolithographic structuring.

[0160] If a color center (FZ) is used as part of a sensor system, the amount and / or direction of the magnetic excitation H generated by the excitation device in the magnetic circuit preferably depends on operating state parameters of the electronic circuit (i.e. preferably a MOS, CMOS, BICMOS or bipolar circuit). In this context, reference is made to German patent application DE 10 2018 127 394 A1, which was not yet published at the time of the priority application of the present disclosure.

[0161] The use of the method presented here to produce a device according to DE 10 2018 127 394 A1 is obviously part of the present disclosure. The core of the document presented here relates to the large-scale series production of such a system as described in DE 10 2018 127 394 A1, for example. The method presented here is also suitable for the production of quantum computers and other quantum optical systems that need to be connected to microelectronic and / or micromechanical and / or microoptical systems.

[0162] Such quantum technology, micro-electro-optical systems generally include photosensitive components (pG, nG). The photosensitive components (pG, nG) are then preferably suitable for and / or intended to detect the luminescence of the color center (FZ). For example, if a system according to the German patent application DE 10 2018 127 394A1, which was not published at the time of the priority notification of the present disclosure, is constructed, at least one operating parameter of the microelectronic circuit generally depends on the luminescence value of the color center (FZ) detected by the photosensitive component (pG, nG). Preferably, the color center (FZ) is coupled to the pump light source (MS) via a lightwave connection including several optical components (NP, KL, LWL2) through various optical elements on the one hand, and is coupled to the photosensitive component (pG, nG) via other lightwave connections including several other optical components (NP, KL, LWL1) on the other hand. Thus, an integrated MOS circuit or a CMOS circuit or a BICMOS circuit or a circuit using bipolar technology or other circuit technology disclosed herein is characterized in that it comprises at least one crystalline sub-device preferably mechanically firmly connected to the above-mentioned circuit and comprising a color center (FZ), while the color center (FZ) serves as a functional element for the intended use of the integrated circuit. The glue film (FM) and / or the glue lacquer (KL) preferably establish a mechanical connection between the crystalline sub-device and the planar substrate (Sub). For example, preferably, one or more interactive connections are established between the color center (FZ) and at least one or more parts of the MOS, CMOS, BICMOS or bipolar circuit (in particular the light emitting region (LG) and / or the photosensitive member (pG, nG)) by one or more optical couplings of one or more micro-optical functional elements. An integrated CMOS circuit or a MOS circuit or a BICMOS circuit or a circuit using bipolar technology or other circuit technology generally has one or more transistors. In the case of a BICMOS circuit, these transistors can be bipolar transistors and / or MOS transistors. In the case of a MOS or CMOS circuit, these transistors can be MOS transistors. In the case of a bipolar circuit, these transistors can be bipolar transistors.

[0163] Printing of KL

[0164] In addition to the method of painting a planar substrate (Sub) using a spin coater (SC) or spraying and / or brushing and / or local wetting, another important method is the method of printing on a planar substrate (Sub) using a colloidal lacquer (KL) comprising nanoparticles (NP). The nanoparticles (NP) preferably include the color center (FZ) and / or other functional elements. The advantage is that this printing of the colloidal lacquer can be performed immediately in a structured manner. In this case, if necessary, the production of a guide structure (LS) and a capture structure (FS) located on the planar substrate (Sub) can be omitted. For this purpose, a variety of methods known from printing technology can be used.

[0165] To this end, consider the following printing principles:

[0166] Face to face program

[0167] A distinction is made between three printing principles:

[0168] The printing surface with the prestructured gelatinous lacquer (KL) faces the surface of the flat substrate (Sub) (flat to flat). Micromechanically structured stamps are particularly suitable here.

[0169] The printing cylinder with the glue-like lacquer (KL) faces the surface of the flat substrate (Sub) (round to flat)

[0170] Printing surface facing flat substrate (Sub)

[0171] With this principle, the planar substrate (Sub) to be printed is made of a planar counter-pressure plate (imprinting plate) on a planar printing template coated with a colloidal lacquer (KL). As mentioned above, the planar substrate can be microstructured and can include microfluidic elements specifically for guiding the colloidal lacquer. The colloidal lacquer (KL) is transferred to the planar substrate (Sub) to be printed. The disadvantages of this principle are the force required for larger areas and the limited speed. Since the planar substrate (Sub) is usually a semiconductor wafer, it is very fragile and usually requires a very uniform force distribution during printing. Therefore, it is recommended to mount the printing plate hydraulically or in a similar manner.

[0172] Printing roller facing flat substrate (Sub)

[0173] Using the principle of circle to plane, contact pressure is generated on the flat substrate (Sub) to be printed by the rotational movement of the printing cylinder on the printing plate. The printing cylinder rotates around its axis in a fixed position, while the flat substrate (Sub) moves synchronously under the printing cylinder in each printing process (printing process). As a result, the contact pressure is effective only in a narrow strip, that is, in the "tangential" contact area between the circular cylinder and the flat printing plate. This is usually not feasible for fragile flat substrates (Sub). Therefore, rubber rollers or the like will be used in these cases, which limits the resolution of the structure of the gelatinous lacquer (KL) on the substrate (Sub). This enables higher printing speeds and larger formats.

[0174] Application of the roll-to-roll principle would require a cylindrical or flexible planar substrate (Sub), which is included within the scope of what is claimed herein, but is impractical in practice.

[0175] In an indirect printing process, the printing image of the colloidal lacquer (KL) can first be applied to an intermediate carrier. The intermediate carrier is flexible and the colloidal lacquer (KL) is transferred to the flat substrate (Sub) to be printed. For this reason, the printed image must be on the right side when using an indirect printing process. Examples of indirect printing processes are offset printing, indirect relief printing and pad printing. The latter is particularly suitable for the intended application because, when used correctly, the force is evenly distributed on the flat substrate (Sub).

[0176] Printing technology is based on the relationship between printing elements and printing plates such as offset, relief, gravure and screen printing. According to this feature, printing technology is also distinguished in DIN 16500 into the following main printing processes:

[0177] Letterpress: A printing plate in which the image area is higher than the non-image area, such as letterpress and flexographic printing.

[0178] Planographic printing (see also lithography): A printing plate in which the image and non-image areas are approximately at the same level, as in offset printing.

[0179] Gravure printing: The image area of ​​the printing plate is lower than the non-image area.

[0180] Stencil: A printing plate in which the image area consists of the openings of a stencil, primarily on a color-permeable stencil support, a screen made of plastic or wire. The non-image areas are impermeable to paint, as in silkscreen and risography.

[0181] Furthermore, a distinction can be made based on the transport path: For applications when printing colloidal lacquers, we distinguish between direct and indirect printing processes. Direct printing processes are characterized by the fact that the printed image is brought directly from the printing plate to the flat substrate (Sub) to be printed. Therefore, the printed image must be reverse imaged on the printing plate. Examples of direct printing processes are squeegee gravure, relief printing and flexographic printing. In indirect printing processes, the printed image is first applied to an intermediate support. The intermediate support is flexible and transfers the lacquer to the substrate. Therefore, due to the application of force, indirect methods are particularly suitable for applying structures made of colloidal lacquers to flat substrates (Sub). For this reason, in indirect printing processes, the printed image must be a laterally correct image. Examples of indirect printing processes are offset printing and pad printing, which is particularly recommended here.

[0182] letterpress printing

[0183] In the case of relief printing, the printing elements protrude from the printing plate.When relief printing is used for printing gelatinous lacquers (KL), it is particularly preferred to use microstructured printing plates.

[0184] For example, for printing onto a MOS wafer or a CMOS wafer or a BICMOS wafer or a bipolar wafer which is surface-planarized by CMP and acts as a planar substrate (Sub), it makes sense to use a microstructured wafer as a reverse printing plate, the raised ridges of which represent the pressure elements.

[0185] Devices for applying gel lacquer (KL) in the form of flatbed presses are particularly suitable. In this case, the printing is planar / flat, since the flat pressure surface of the platen presses against a flat printing plate, which is usually clamped vertically in a flatbed press. Such flatbed presses are suitable for using relief printing methods as long as an absolutely uniform pressure distribution is achieved on the flat substrate. In the case of a flatbed press, the flat substrate is preferably supplied in the form of a wafer, such as a MOS wafer or a CMOS wafer or a BICMOS wafer or a bipolar wafer, for example.

[0186] From this basic form of relief printing, further forms of printing can be developed:

[0187] Indirect printing.

[0188] This is indirect relief printing, where the artwork is printed by a cliché as a correct method. The cliché transfers the printed image to a blanket that produces a negative image, the so-called rubber cylinder, which prints the negative image onto the flat substrate (sub) (paper) to be printed.

[0189] Flexographic printing

[0190] Flexographic printing is known from relief printing. Flexographic printing is a relatively new relief printing process in which the printing plates consist of flexible photopolymer plates, which are preferably microstructured in the present case. The efficiency of flexographic printing can be significantly increased by using prefabricated continuous printing plates. These are specially developed plastics suitable for the intended use, such as polyimide layers on a carrier material (sleeve), such as a silicon wafer. For example, the structures to be transferred can be engraved into the surface using a CO2 laser or an excimer laser. This process is also referred to as direct flexographic engraving. In this case, coated silicon wafers are preferably used for this direct flexographic engraving and are used as sleeves.

[0191] Gravure printing

[0192] Gravure printing is a printing process in which the printing elements are transferred to the printing plate by chemical or mechanical processes. Preferably, the depressions are produced by micro-technical processes. During the printing process, the printing plate is coated with a relatively thin liquid colloidal lacquer, and the excess lacquer including excess nanocrystalline nanoparticles (NP) in the colloidal lacquer (KL) is stripped from the printing plate using a scraper. When diamond particles are used as nanocrystalline nanoparticles (NP), this is not without problems, because the diamond nanoparticles may damage the printing plate.

[0193] The gelatinous lacquer (KL) used for the printing process preferably remains only in the recessed areas of the printing plate; so only these parts are printed. The color is transferred to the flat substrate by high contact pressure, so the flat substrate must have a certain flexibility. Therefore, this method is not very suitable for printing MOS wafers or CMOS wafers or BICMOS wafers or bipolar wafers. The amount of lacquer applied to the structured areas is determined by the depth of the recesses on the printing plate between the raised structures. Therefore, the produced printed structures can also be structured vertically in this way.

[0194] Lithography

[0195] With lithography, the printing area and the non-printing area are at the same level. For this purpose, hydrophobic and hydrophilic areas are preferably produced on the printing plate by a suitable surface treatment. For this purpose, the selected carrier material must be dissolved in a solvent (LM), here for example water. This is the case with gelatin. While the printing part accepts the solvent of the carrier, for example water, the non-printing area is coated with an oil film or adjusted accordingly by a plasma treatment and then repels the printing ink, which is water-based here. The printing part will be coated with a gelatinous lacquer (KL). However, the non-printing area does not accept the gelatinous lacquer during the printing process and repels it.

[0196] Screen printing

[0197] Another particularly suitable printing process is the screen printing process. Screen printing is particularly important for the technical teachings shown here. In screen printing, a tool similar to a wiper, preferably a rubber scraper, is used to squeeze the colloidal paint (KL) through a fine mesh fabric or a template onto a flat substrate (Sub) to be printed. The printing plate of screen printing consists of a frame covered with a fabric made of metal or plastic. The fabric is provided with a stencil made of plastic or metal. In order to produce the stencil, the entire surface of the tensioned fabric is coated with a photopolymer and the mold to be printed is exposed via a positive film. The photopolymer hardens in the non-printing area, and the unexposed material is washed away. During the printing process, the printing ink only passes through the washed fabric. Silicon wafers perforated by microstructure can also be used as printing stencils.

[0198] Compared with other printing methods, the printing speed is relatively slow. Screen printing is a direct printing process. During the printing process, there is a small gap of several microns to several millimeters between the printing plate and the flat substrate (Sub), which is necessary to achieve the so-called jump (Absprung in German). Ideally, the gap should be 0m, but this is usually not possible. The screen jump height is partially and temporarily cancelled when the scraper presses the screen down to the position where the stencil rests on the printing material. At this point, the contour is sealed and the gelatinous paint is transferred to the flat substrate (Sub). If the scraper continues to move, the fabric that has just been coated with the stencil is lifted again.

[0199] In the case of a printing stencil without a supporting screen, the stencil itself must be sufficiently stable and, for example, made of steel or silicon, and stretched directly into the frame. Like the stencil, the possible printed images are limited. It will not occur that the printing paste component blocks the mesh-this is possible in other almost identical screen printing processes. Therefore, stencil printing is more suitable for applying a gelatinous lacquer (KL) on a flat substrate (Sub). It is particularly beneficial to use a microstructured printing stencil. For example, a wafer perforated using a microstructure technology can be used as a printing stencil.

[0200] Pad Printing

[0201] Pad printing is an indirect scraper gravure printing and is also particularly suitable for applying colloidal lacquers to planar substrates (Sub). The template is transferred from the surface (gravure printing plate) to the planar substrate (Sub) using a gasket (plug) made of, for example, porous silicone rubber. Therefore, it can also be applied to uneven planar substrates, such as non-planarized silicon wafers with electronic structures and / or micro-optics and / or already formed microfluidic functional elements. This is particularly beneficial because pad printing can thus be used to place nanocrystalline nanoparticles (NP) in microfluidic functional elements (FS2).

[0202] Imprint

[0203] Embossing is a flexographic printing process and can therefore be assigned to relief printing. The stamp is preferably made to be flexible.

[0204] Electronic printing method

[0205] It is conceivable that the gel-like lacquer is applied by inkjet printing or a suitable dispenser with xy coordinate control.

[0206] Then a printable quantum technology component is produced. As a result of the printing process, one such printable quantum electronic component includes a planar substrate (Sub) and a structured colloidal film (FM). In the application example discussed here, this can be a structured gelatin film, which includes diamond nanocrystals with NV color centers. Therefore, the colloidal film (FM) produced by structuring and hardening of the colloidal paint (KL) includes nanoparticles (NP) as basic features. At least some nanoparticles (NP) or all nanoparticles (NP) preferably have one or more color centers. However, for the purpose of this document, the nanoparticles (NP) can also be nano-LEDs. The structured colloidal film (FM) is preferably printed on a planar substrate (Sub). Other electronic and / or photonic functional elements are also preferably printed or manufactured on the substrate (Sub). These other electronic and / or photonic functional elements printed or manufactured on the substrate (Sub) are preferably one or more of the following functional elements:

[0207] ·electric wire,

[0208] ·inductance,

[0209] ·capacitance,

[0210] ·resistance,

[0211] ·transistor,

[0212] ·diode,

[0213] Optical waveguides,

[0214] Wave coupler,

[0215] Optical resonators,

[0216] ·Mirror,

[0217] Lenses, etc.

[0218] Transparent lacquers and / or semiconductive lacquers and / or more or less conductive and nonconductive lacquers can be used for printing these components.

[0219] In this way, complete quantum technology systems can be created on planar substrates.

[0220] This corresponds to a printing process for placing nanoparticles (NP) in the form of nanocrystals, for example, with color centers (FZ), on a planar substrate (Sub). This is in turn a process for producing quantum technology or micro-electro-optics or microelectronics or photonics or micro-optical systems. The method again begins with the deployment of a planar substrate (Sub). For example, the substrate is in turn a silicon wafer and / or a wafer made of different materials and / or different suitable materials that can be printed in the following process. Preferably, it is a semiconductor wafer and / or other semiconductor substrate or a silicon wafer or a GaAs wafer or a wafer made of IV material or a wafer made of III / V material or a wafer made of II / VI material or a wafer made of a mixture of these materials or a germanium wafer or a single crystal diamond wafer or a polycrystalline diamond wafer or a part thereof, or preferably a glass wafer and / or a ceramic wafer and / or a metal sheet or a plastic plate or a part thereof. The method preferably includes the production of a typical integrated circuit at a certain point in the method. However, the circuit can also be composed of discrete components attached to the substrate. As a result of this manufacturing step, the planar substrate (Sub) therefore includes at least one electronic circuit consisting of at least two electronic components at the end of the method, which are mechanically fixed on or in the planar substrate (Sub). The circuit preferably includes at least one MOS transistor and / or a bipolar transistor. In this sense, the wire is an electrical component, so that the circuit may include a wire and a second component, such as a resistor or a transistor. Like the spin coating process explained above, the printing process includes providing a colloidal lacquer (KL) in the form of a colloidal solution of nanoparticles (ND) and possible solvents (LM) in a carrier material (TM). As mentioned above, at least some of the nanoparticles (NP) or all of the nanoparticles (NP) preferably include one or more color centers (FZ). The nanoparticles (NP) can also be nano-LEDs. What is written above about this point also applies here in a similar manner. The colloidal solution, the colloidal lacquer (KL) are mixed together in a way that they can wet at least a portion of the planar substrate (Sub). However, it is now preferred to use a colloidal solution, a colloidal lacquer (KL) to carry out structured printing or painting or coating or local wetting of the planar substrate (Sub) in order to produce a structured colloidal film (FM) on the surface (OF) of the planar substrate (Sub). In this case, for example, pad printing and / or stencil printing and / or screen printing and / or nanoimprint printing methods can be used as printing methods. A person skilled in the art will of course be able to determine other methods suitable for printing based on a large number of methods known in the prior art.

[0221] Although it is conceivable to further structure the structured gelatinous film (FM) applied by these printing techniques using photolithography, we assume here that the printing method is sufficient here. However, a person skilled in the art can easily further improve the method by additional structuring steps. Assuming that such further structuring steps are in fact generally not necessary here, the next step is to harden the gelatinous film (FM).

[0222] Again, nanoparticles (NP) are preferably particles having a particle size less than 1 μm and / or better less than 500 nm and / or better less than 250 nm and / or better less than 100 nm and / or better less than 50 nm and / or better less than 25 nm and / or better less than 10 nm and / or better less than 5 nm and / or better less than 2.5 nm and / or better less than 1 nm.

[0223] Equally, nanoparticle (NP) or crystal size is less than 1 μ m and / or better less than 500nm and / or better less than 250nm and / or better less than 100nm and / or better less than 50nm and / or better less than 25nm and / or better less than 10nm and / or better less than 5nm and / or better less than 2.5nm and / or better less than 1nm diamond nanocrystal.In addition, nanoparticle (NP) can be crystal size less than 1 μ m and / or better less than 500nm and / or better less than 250nm and / or better less than 100nm and / or better less than 50nm and / or better less than 25nm and / or better less than 10nm and / or better less than 5nm and / or better less than 2.5nm and / or better less than 1nm silicon nanocrystal.

[0224] Nanoparticles (NP) may also be nanocrystals of direct semiconductor material having a crystal size less than 1 μm and / or better less than 500 nm and / or better less than 250 nm and / or better less than 100 nm and / or better less than 50 nm and / or better less than 25 nm and / or better less than 10 nm and / or better less than 5 nm and / or better less than 2.5 nm and / or better less than 1 nm.

[0225] Nanoparticles can also be nanocrystals made of III / V or II / VI semiconductor materials or mixtures thereof having a crystal size of less than 1 μm and / or better less than 500 nm and / or better less than 250 nm and / or better less than 100 nm and / or better less than 50 nm and / or better less than 25 nm and / or better less than 10 nm and / or better less than 5 nm and / or better less than 2.5 nm and / or better less than 1 nm.

[0226] Nanoparticles (NP) may also be nanocrystals having a crystal size of less than 1 μm and / or better less than 500 nm and / or better less than 250 nm and / or better less than 100 nm and / or better less than 50 nm and / or better less than 25 nm and / or better less than 10 nm and / or better less than 5 nm and / or better less than 2.5 nm and / or better less than 1 nm.

[0227] Finally, the nanoparticles (NP) may be nano-LEDs having a crystal size less than 1 μm and / or better less than 500 nm and / or better less than 250 nm and / or better less than 100 nm and / or better less than 50 nm and / or better less than 25 nm and / or better less than 10 nm and / or better less than 5 nm and / or better less than 2.5 nm and / or better less than 1 nm.

[0228] The one or more colour centres may be, for example, an NV centre in a diamond crystal and / or an SiV centre in a diamond crystal and / or an H3 centre in a diamond crystal.

[0229] This can be useful if the microfluidic functional elements (LS, FS, FS1, FS2) in the surface of the planar substrate (Sub) control the flow of the colloidal lacquer (KL) during the printing process. For this purpose, it makes sense to carry out a procedure for manufacturing the microfluidic functional elements on the planar substrate (Sub). For example, ridges and grooves etc. can be produced in order to influence the lacquer flow.

[0230] Therefore, some of the microfluidic functional elements (LS, FS, FS1, FS2) are preferably configured and / or suitable for forming a structured colloidal film (FM) on a surface (OF) of a planar substrate (Sub) and for mechanically or fluid-mechanically interacting with one or, if necessary, several nanoparticles (NP) when the planar substrate is printed using a colloidal lacquer (KL).

[0231] The publication focuses on how to combine quantum technology based on NV centers with MOS, CMOS, BICMOS or bipolar technology without modifying the relevant semiconductor processes. Therefore, the basic criterion for the substrate (Sub) is that it is at least partially semiconducting, in addition to oxides and metallization, etc.

[0232] Therefore, the planar substrate (Sub) preferably comprises a semiconductor wafer and / or a semiconductor substrate and / or a silicon wafer and / or a GaAs wafer and / or a wafer made of IV material and / or III / V material and / or II / VI material and / or a mixture of these materials and / or a germanium wafer and / or a single-crystal diamond wafer or a polycrystalline diamond wafer and / or a glass wafer and / or a ceramic wafer and / or a metal sheet and / or a plastic plate. That is, it is also conceivable to build a quantum technology system on the last three substrates mentioned.

[0233] If the planar substrate (Sub) is a semiconductor substrate, then in the sense of co-integration, it is meaningful to implement a method for producing electronic components on a semiconductor substrate and / or a method for producing electronic MOS, CMOS, BICMOS or bipolar components on a semiconductor substrate, preferably before printing and / or painting and / or coating and / or local wetting with a colloidal lacquer (KL).

[0234] As part of the overall production process, it is also advisable to implement a method for producing micro-optical functional elements on a semiconductor substrate. These micro-optical functional elements are preferably used to guide the light from a pump light source to the color center and, on the other hand, collect the fluorescence of the color center and feed it to a photodetector (pG, nG) via a suitable optical path, such as an optical waveguide structure (LWL1, LWL2) and a filter, such as a Bragg filter.

[0235] As mentioned above, in addition to the possible function of the fluid supply which may need to be measured in later operations, a preferred function of some microfluidic functional elements is to influence the flow of the colloidal lacquer (KL) and thereby the movement of the nanoparticles (NP) during printing and / or during painting and / or coating. One of these functions can be to increase the movement of the nanoparticles (NP) relative to the micro-optical element (e.g., Figure 8 LWL1 and LWL2 in the example are located in a predetermined area (e.g., Figure 8This is the only way to ensure that the interaction between the micro-optical element (LWL1, LWL2) and the color center (FZ) of the nanoparticle (FZ) can be guaranteed. It is therefore important that, in general, one microfluidic functional element (LS, FS1, FS2) is functionally related to at least one micro-optical functional element (LWL1, LWL2) that is also manufactured using this method. In this example, the functional relationship arises only based on the outline of the placement control and the optical coupling of the achieved color center (FZ) to the micro-optical element (LWL1, LWL2). If all dimensions are correct, the associated micro-optical functional element (LWL1, LWL2) optically interacts with at least the associated color center (FZ) of the associated nanoparticle (NP) (here, the nanoparticle trapped in the microfluidic functional element (FS2) and its color center (FZ)). This means, for example, that the microfluidic functional element (FS2) picks up the nanodiamond as a nanoparticle (NP) with an NV color center as a color center (FZ) in the groove and that, due to the forced positioning of the color center (FZ) associated with the optical functional element, for example, a coupling structure for an optical light waveguide structure (LWL1, LWL2), the microfluidic functional element (FS2) strengthens this optical coupling between the nanodiamond and the optical light waveguide structure (LWL1, LWL2). Such a micro-optical functional element (here, the optical light waveguide structure (LWL1, LWL2) is therefore suitable and / or arranged to optically interact with at least the associated color center (FZ) of the associated nanoparticle (NP) (here, the nanocrystal trapped in the microfluidic functional element (FS2) and its color center (FZ)). The nanoparticle (NP) is preferably a nanodiamond crystal or a nanoLED with an NV center, and then, as an example, the active layer of the nanoparticle can be coupled to the optical light waveguide structure (LWL1).

[0236] Thus, in this example, the actual functionality of the associated microfluidic component (FS2) increases the possibility that, for example, the color center (FZ) of the nanocrystal can interact with the micro-optical components (LWL1, LWL2). In order to be able to manufacture a complete optical system, it is useful to implement a printing process on a semiconductor substrate to produce light-emitting devices. Reference has already been made to Such production can also be provided for printing or application of a colloidal lacquer (KL) with nano-LEDs as nanoparticles (NP).

[0237] In general, it can be stated here that in the technical teachings disclosed herein, regarding the production and interaction of nanoparticles (NP) with components of MOS, CMOS, BICMOS or bipolar circuits, MOS, CMOS, BICMOS and bipolar circuits as well as nanocrystals as nanoparticles (NP) with color centers (FZ) are disclosed.

[0238] Such quantum technology and / or micro-electro-optics and / or microelectronics and / or photonics system preferably comprises a semiconductor crystal as a planar substrate (Sub), and comprises another crystal in the form of nanoparticles (NP), preferably in the form of nanocrystals, while the semiconductor crystal comprises a MOS circuit or a CMOS circuit or a BICMOS circuit or a bipolar circuit or other microelectronic circuits, so that the planar substrate (Sub) also comprises these circuits, and wherein the other crystal has at least one color center (FZ), and the other crystal is preferably directly mechanically connected to the semiconductor crystal, in other words, the planar substrate (Sub), in particular via a glue film (FM) and / or a glue lacquer (KL). Therefore, the other crystal is mechanically attached to the semiconductor crystal, in other words, the planar substrate (Sub), in particular via the glue film (FM) and / or the glue lacquer (KL). In particular, there is an effective connection between the color center (FZ) of the other crystal and at least a part of the MOS circuit, CMOS circuit, BICMOS circuit, bipolar circuit or other microelectronic circuit of the semiconductor crystal (i.e. the planar substrate (Sub)). How to manufacture has been explained above.

[0239] The other crystal is preferably a diamond crystal or a silicon crystal. The other crystal is preferably a diamond crystal, and at least one color center (FZ) is an NV color center and / or an H3 center, or the other crystal is a diamond crystal, and at least one color center (FZ) is a SiV color center. The MOS circuit, CMOS circuit, BICMOS circuit, bipolar circuit or other microelectronic circuit of the semiconductor crystal (Sub) preferably includes a photosensitive component (nG, pG), such as a photodiode, which can, for example, interact with the color center (FZ) and / or the light-emitting component of the other crystal, such as the MESA structure (MS) described above by way of example, and can, for example, also interact with the color center (FZ). Therefore, on the one hand, the effective connection between the MOS circuit, CMOS circuit, BICMOS circuit, bipolar circuit or other microelectronic circuit of the semiconductor crystal (Sub) and the color center (FZ) is an optical and / or electromagnetic and / or electronic effective connection.

[0240] In addition, the MOS circuit, CMOS circuit, BICMOS circuit, bipolar circuit or other microelectronic circuit of the semiconductor crystal (Sub) preferably comprises electromagnetic components, in particular magnetic field generating components (e.g. flat coils) and / or electric field generating components (e.g. electrodes of capacitors). This can be used, for example, to influence the optical properties of the color center (FZ). In the case of an electrode, it is preferably made of a conductive material that is substantially transparent to the pump radiation of the color center (FZ) and / or the fluorescence radiation of the color center (FZ). In the case of an NV color center of a diamond crystal as the other crystal as the color center (FZ), the electrode is preferably made of indium tin oxide (ITO) or a similar material. The color center of the other crystal (e.g. NV center of a diamond nanocrystal) can therefore interact with electromagnetic waves that have passed through such a transparent electrode.

[0241] It is also possible to use the color center of another crystal (e.g., the NV center of a diamond nanocrystal) to emit electromagnetic waves that pass through such a transparent electrode. The electric field generated by the transparent electrode can affect the properties of the color center (FZ) of the other crystal. The color center (FZ) is preferably located near the edge of the transparent electrode because the end effect increases the field strength at the edge of the transparent electrode and can therefore affect the color center more strongly. Therefore, the electromagnetic member, such as the transparent electrode and / or the flat coil, is preferably intended and / or suitable for changing the physical parameters of the color center (FZ), in particular the optical parameters.

[0242] In a similar manner, it is useful that the MOS circuit, CMOS circuit, BICMOS circuit, bipolar circuit or other microelectronic circuit of the semiconductor crystal (Sub) comprises an electromagnetic component, in particular a magnetic field generating component and / or an electric field generating component, and that the electromagnetic component is intended and / or suitable for changing a physical parameter, in particular an optical parameter, of the color center (FZ) as a function of the state of the MOS circuit, CMOS circuit, BICMOS circuit, bipolar circuit or other microelectronic circuit of the semiconductor crystal (Sub). The MOS circuit, CMOS circuit, BICMOS circuit, bipolar circuit is thus able to change the state of the color center (FZ). The MOS circuit or CMOS circuit or BICMOS circuit or bipolar circuit preferably evaluates the state of a photosensitive sensor (nG, pG) that depends on the light emission of the color center (FZ). It is also useful if the MOS circuit or CMOS circuit or BICMOS circuit or bipolar circuit can control the radiation of electromagnetic waves into the color center (FZ).

[0243] If the other crystal has at least two color centers (FZ), for some applications it is advisable to arrange them in advance and aim them to interact physically observably. This is useful, for example, for applications in quantum computing. This is useful, for example, if two NV centers in a diamond crystal interact with each other, in particular entanglement.

[0244] For this purpose, it is meaningful if a MOS circuit or a CMOS circuit or a BICMOS circuit or a bipolar circuit or other microelectronic circuit of the semiconductor crystal (Sub) comprises means intended to detect and / or influence the interaction of at least two color centers (FZ) and / or electrodes which may in particular be made of ITO or similar materials and / or device parts which generate a magnetic field. For example, electrostatic fields may be used to change optical properties, which can be used to select and deselect individual color centers in the color centers (FZ).

[0245] The present invention also comprises a carrier material (TM) for use in a method of producing quantum technology, micro-electro-optics, microelectronics or photonic systems, wherein the carrier material (TM) is intended to embed nanoparticles (NP), in particular nanocrystals and / or nanoscopic devices in the carrier material (TM).

[0246] The nanoparticle (NP) has at least one color center (FZ) having at least one characteristic electromagnetic wavelength and / or at least one electromagnetic resonance wavelength.

[0247] For example, the NV center in diamond has two characteristic wavelengths: a green pump wavelength used to irradiate the NV center in order to excite it; and a fluorescence wavelength at which the NV center is fluorescent depending on the magnetic flux density B at the location of the NV center. In order for the color center (FZ) to interact with the optical functional elements of the rest of the device, when electromagnetic radiation of at least one characteristic wavelength and / or at least one resonant wavelength of at least one color center (FZ) passes through a distance of 1 mm of the solidified carrier material (TM) (for example, in the form of a gelatinous film), the carrier material (TM) attenuates the electromagnetic radiation by no more than 50% and / or better no more than 25% and / or better no more than 10% and / or better no more than 5%. The carrier material (TM) is preferably gelatin. For example, the use of a nanoparticle (NP) as a nanodiamond with an NV center (NV) or one of the other nanoparticles (NP) shown meets this.

[0248] Orientation of Nanoparticles (NPs)

[0249] Here a quantum technology or microelectronic or microoptical or photonic system is presented, comprising a planar substrate (Sub) having a portion of a colloidal film (FM) comprising at least one nanoparticle (NP) having a color center (FZ). The nanoparticle (NP) is provided with a sub-device in the form of an alignment aid (Fe) which allows alignment and / or positioning of the nanoparticle (NP) and / or alignment of at least one axis of the nanoparticle (NP).

[0250] The planar substrate (Sub) is preferably provided with a sub-device in the form of a capture device (Fa) which allows alignment and / or positioning of the nanoparticles (NP) and / or alignment of at least one axis (AS) of the nanoparticles (NP).

[0251] The nanoparticle (NP) is preferably a nanocrystal. The axis (AS) is preferably a crystal axis of the nanocrystal. The alignment aid (Fe) is preferably a ferromagnetic substructure of the nanoparticle (NP). The capture device (Fa) is preferably a ferromagnetic substructure of the planar substrate (Sub). The alignment aid (Fe) is preferably suitable for and arranged to exert a translational force on the nanoparticle (NP) through a field. The capture device (Fa) is preferably suitable for and / or arranged to exert a translational force on the nanoparticle (NP) through the alignment aid (Fe) and the field. The nanoparticle (NP) preferably has two alignment aids (Fe) and / or one alignment aid (Fe). The two alignment aids (Fe) and / or one alignment aid (Fe) are preferably suitable for and / or arranged to at least temporarily exert a torque on the nanoparticle (NP). The capture device (Fa) is preferably suitable for and / or arranged to exert a torque on the nanoparticle (NP) through the alignment aid (Fe) and the field. This preferably results in the capture device (Fa) and / or the alignment aid (Fe) generating a magnetic field and / or an electrostatic field and / or another electromagnetic field.

[0252] The capturing means (Fa) and the alignment aid (Fe) preferably interact with each other. The capturing means (Fa) is preferably adapted and / or intended to influence the placement and / or alignment of the nanoparticles (NP) by interaction between the capturing means (Fa) and the alignment aid (Fe).

[0253] Fig.10 An exemplary nanoparticle (NP) with a color center (FZ) is shown. The nanoparticle (NP) is a rectangular parallelepiped. The lengths of its three sides are preferably different from each other.

[0254] The cuboid of the nanoparticle (NP) is provided with two above-mentioned alignment aids (Fe) at opposite ends. These alignment aids are preferably appropriately pre-magnetized permanent magnetic substructures, such as ferromagnetic iron or niobium layers. The nanoparticle (NP) is preferably a nanocrystal, such as a nanodiamond crystal. The cuboid axis (AS) is preferably consistent with the lattice axis of the nanocrystal. Preferably, a color center (FZ) is produced in the cuboid axis (AS) by single ion implantation. In the case of nanodiamond crystals, the color center is preferably an NV center. Special mention is made here of the other nanoparticles (NP) already mentioned, in particular nano-LEDs. If, as in the case of iron niobium, the alignment aids (Fe) are conductive, they can be used for electrical contacting of electrically functional nanoparticles (NP), for example after being coated with an anti-corrosion coating, for example by gold plating.

[0255] Although in Figure 8 In the embodiment, during the coating process, the nanoparticles are in a more or less random orientation within the second capture structure (FS2), but in Fig.11 For this purpose, Figure 8 compared to, Fig.11 The substrate has two capture devices (Fa) which cooperate with the alignment aids (Fe) of the nanoparticles to ensure proper alignment of the nanoparticles (NP) in a predetermined manner by means of translational forces and / or torques.

[0256] In many quantum technology devices, it is important to orient nanoparticles (NPs) in a predetermined manner. An exemplary process for this is described below. Figure 4 First, a planar substrate (Sub) for depositing nanoparticles (NP) is provided ( Figure 4 In step a), nanoparticles (NP) are initially deposited on a support material (here an exemplary deposition substrate (W)) as Figure 4 The growth shown is beneficial for nanocrystals having a predetermined crystal orientation. Figure 4 In the example of FIG. 1 , it may be, for example, a diamond layer (D) on a silicon wafer as a deposition substrate (W), which is deposited in the following processing steps ( Figure 4 In step b) of , the diamond is deposited on a silicon wafer as deposition substrate (W) by, for example, plasma deposition. Various methods are known from the literature for producing oriented diamond layers on silicon wafers.

[0257] For example, by means of a single ion implantation combined with a thermal treatment and, if necessary, with the implantation of other atoms such as sulfur, it is now possible to further treat the ions in a subsequent processing step ( Figure 4 In step d) of the present invention, color centers (FZ) are generated in the functional layer (D).

[0258] In a further step ( Figure 4 In step d), the functional layer (D) is preferably structured. This can be done, for example, by plasma etching and / or wet chemical etching and / or gas phase etching, etc. Structuring can also optionally be carried out during deposition and / or after deposition and before the generation of color centers (FZ). For example, it is advantageous to deposit the material of layer (D) directly in the form of needles with a predetermined crystal orientation.

[0259] In the final step ( Figure 4 In step e), the produced nanoparticles (NP) are preferably separated from the wafer (W) by undercutting material of the wafer (W) in the region of the nanoparticles (ND).

[0260] Now, before separating them ( Fig. 9Prior to step f), the nanoparticles are preferably provided with an alignment aid, for example in the form of a ferromagnetic substructure. This can be done, for example, by depositing an iron layer as an alignment aid (Fe) on layer (D). Fig. 9 Step d). Usually, depending on the material of layer (D), deposition of an adhesive layer is also necessary. Such partial structures can also be produced by, for example, focused ion implantation of iron. After the iron layer is structured, a gold layer or the like is preferably deposited on the iron layer together with an adhesive layer between the iron layer and the gold layer and structured.

[0261] The alignment aid (Fe) may preferably interact mechanically and / or magnetically and / or electrostatically and / or electromagnetically with the capture device (Fa) of the planar substrate (Sub), as will be explained later.

[0262] Nanoparticles (NP) are usually positioned on the wafer (W) by structuring ( Fig. 9 Step e).

[0263] Furthermore, the nanoparticles (NP) are usually separated from the wafer (W) again ( Fig. 9 Step f).

[0264] Can be changed Figure 4 and Fig. 9 The sequence of steps in the diagram can be followed and, if necessary, further steps can be added depending on the application.

[0265] The nanoparticles (NP) produced in this way can therefore be used on a planar substrate (Sub) which preferably has capture means (Fa) interacting with said alignment aids (Fe) of the nanoparticles (NP).

[0266] The interaction of the alignment aids (Fe) of the nanoparticles (NP) with each other in the colloidal paint may become a problem. The nanoparticles (NP) and the alignment aids (Fe) are designed so that the thickness of the nanoparticles (NP) is so large that the force between the alignment aids (Fe) of two nanoparticles is too small to agglomerate or the alignment aids (Fe) of each of the two nanoparticles (NP) repel each other when in direct contact.

[0267] This then results in a method for manufacturing quantum technology or microelectronics or microoptics or photonic systems, the method having the following steps:

[0268] Provide a flat substrate (Sub);

[0269] coating the colloidal film (FM) with a colloidal lacquer (KL) and optionally structuring the colloidal film (FM), in particular also by painting and / or printing and / or spraying and / or local wetting and / or coating, which colloidal lacquer has at least one nanoparticle (NP) having a color center (FZ);

[0270] ·Alignment and / or positioning of the nanoparticles (NP) is performed by means of a sub-device in the form of an alignment aid (Fe) for the nanoparticles (NP), which sub-device aligns the positioning of the nanoparticles (NP) and / or at least one axis (AS) of the nanoparticles (NP) and / or other functional elements of the nanoparticles (NP) on the substrate relative to the planar substrate (Sub), such as optical functional elements such as optical waveguide structures (LWL1, LWL2).

[0271] As a further processing step, an additional step of aligning and / or positioning the nanoparticles (NP) by means of a magnetic field and / or an electric field and / or other electromagnetic field by interaction with an alignment aid (Fe) is produced. For this purpose, preferably before applying the colloidal lacquer (KL), one or preferably a plurality of capture devices (Fa) are preferably produced on a planar substrate (Sub), which can interact with the alignment aid (Fe) of the nanoparticles (NP). The nanoparticles (NP) in the colloidal lacquer (KL) are preferably nanocrystals. If the axis (AS) of such a nanocrystal becomes aligned by such an alignment structure (Fe), the aligned axis (AS) is preferably a crystal axis of the nanocrystal. This is particularly important because the optical properties and other properties of the color center (FZ) in the nanocrystal are generally related to the crystal orientation. The alignment aid (Fe) is particularly preferably manufactured as a ferromagnetic substructure of the nanoparticle (NP), because such a ferromagnetic substructure is easy to manufacture with planar technology before the nanoparticle (NP) is separated from the auxiliary carrier.

[0272] When the colloidal lacquer (KL) is applied, it flows on the substrate (Sub) together with the previously produced nanoparticles (NP) comprising the color center (FZ) and the alignment aid (Fe). The capture device (Fa), which is preferably produced on or in the planar substrate (Sub), then preferably exerts a force and / or torque on the nanoparticles (NP) carried by the carrier material (TM) of the colloidal lacquer (KL).

[0273] In the method modified in this way, the translational force and / or torque is thus exerted on the nanoparticles (NP) by means of the alignment aid (Fe) of the individual nanoparticles (NP) and the field, which is preferably generated by a capture device (Fa) of the planar substrate (Sub). Of course, it is conceivable that the field is generated in the turntable of the spin coater (SC) instead of in such a capture device (Fa) of the planar substrate. For the purposes of the present disclosure, such a field generating device should also be regarded as a capture device (Fa) of the planar substrate (Sub).

[0274] Therefore, the proposed method preferably further comprises the step of generating a field interacting with the alignment aid (Fe) of the nanoparticles (NP) by means of a sub-device of the planar substrate (Sub), which sub-device is referred to as capture means (Fa) in the following.

[0275] To visualize an exemplary placement process, let us assume that the nanoparticles (NPs) have a more or less rectangular needle shape ( Fig.10 ), while the needle shape is predetermined by the nanocrystals that are part of the individual nanoparticles (NP). The nanoparticles (NP) have two ferromagnetic regions at their ends as alignment aids (Fe). Fig.10 , such a nanoparticle (NP) is schematically shown as an example in a top view and a side view.

[0276] Fig.11 Corresponds to Figure 8 , Fig.11 The aim is now to clarify the interaction between nanoparticles (NP) and planar substrates (Sub). An exemplary CMOS wafer is again used as an exemplary planar substrate (Sub), but it is now equipped with, for example, a ferromagnetic capture device (Fa). The following explanation can also be extended to MOS wafers, BICMOS wafers, wafers using bipolar technology, etc. In these technologies, the circuit preferably has at least one transistor, which usually interacts indirectly with the color center of the nanoparticle (NP) via a partial optical path. For example, this interaction can affect the excitation of the pump light source for the color center through the transistor.

[0277] Since the nanoparticles (NP) strive to reach the lowest energy level, they arrange themselves in such a way that the poles of their exemplary ferromagnetic alignment aids (Fe) are antiparallel to the poles of the preferably ferromagnetic catch means (Fa) of the planar substrate (Sub). This antiparallelism is determined by Fig.11 Indicated by the corresponding arrows in .

[0278] If the interaction between the capture means (Fa) of the planar substrate (Sub) and the alignment aid (Fe) of the nanoparticles (NP) is magnetic, then if the nanoparticles (NP) are aligned along their axis ( Fig.10This is useful if the capture device (Fa) is magnetized and is parallel to the surface of the planar substrate (Sub).

[0279] Then, for example, the nanoparticles (NP) may be placed on the planar substrate (Sub) through the interaction between the alignment aid (Fe) of the nanoparticle (NP) and the capture device (Fa) of the planar substrate (Sub).

[0280] This is then also usually associated with the fact that the nanoparticles (NP) are aligned by this interaction on the planar substrate (Sub) by means of this interaction between the alignment aids (Fe) of the nanoparticles and the capture means (Fa) of the planar substrate (Sub).

[0281] Advantages of the present invention

[0282] The technical teaching disclosed here enables the production of microelectronic MOS, CMOS, BICMOS and bipolar circuits including NV color centers. Thick film circuits including at least one paramagnetic center, especially NV color center, can also be manufactured using printing processes. This unites practically incompatible fields and opens up the possibility of cost-effective large-scale production.

[0283] The manufacturing process presented here can combine diamond nanocrystals with MOS technology, CMOS technology, BICMOS technology and bipolar technology, and can also combine diamond nanocrystals with thick film technology. However, the advantages are not limited to this. In this regard, reference should be made to the book "Handbook of Thick-and Thin-Film Hybrid Microelectronics" by Tapan K. Gupta, Wiley, May 13, 2003. The combination of the technology disclosed herein with the methods and devices described therein is an explicit part of the present disclosure.

[0284] Notes to review agencies:

[0285] This application claims the priority of German patent application number DE 10 2019 114 032.3, filed on May 25, 2019.

[0286] Reference numerals list

[0287] 1 The coating process starts by applying the nanoparticles (ND) onto the substrate (Sub) by a spin coater (SC);

[0288] 2. Provide a planar substrate (Sub);

[0289] 3 providing a lacquer in the form of a colloidal solution (KM) of nanoparticles (ND) in a carrier material (TM);

[0290] 4. Photolithography;

[0291] 5. Plasma treatment;

[0292] 6. Remove paint;

[0293] 7 coating (7) (possibly also spreading, locally wetting or printing) a planar substrate (Sub) with a colloidal solution (KM) of nanoparticles (ND) so as to obtain a colloidal film (FM) on the surface (OF) of the planar substrate (Sub);

[0294] 8. Partially harden the gelatinous film (FM) (English: pre-bake);

[0295] 9. Structuring the gelatinous film (FM);

[0296] 10. Curing the gel film (FM) (English: post-bake);

[0297] AS cuboid axis;

[0298] AOX capping oxide of exemplary CMOS circuit;

[0299] D functional layer. Figure 4 In the example of , it is an exemplary diamond layer on an exemplary silicon wafer as a deposition substrate (W);

[0300] DP distributor;

[0301] Dr drain region of an exemplary CMOS transistor;

[0302] DrK drain contact of an exemplary CMOS transistor;

[0303] Fa capture device (trapping device);

[0304] Fe alignment aid;

[0305] FM is a gel film of gel lacquer (KM) on substrate (Sub);

[0306] FOX Field oxide of exemplary CMOS circuit;

[0307] FR is the paint flow direction of the gel-like paint (KL) during painting;

[0308] FS capture structure. The capture structure is used to prevent the movement of the nanoparticles (NP) on the surface (OF) of the substrate (Sub) to be coated during coating. It is preferably used in combination with a guide structure (LS) and other functional elements of the shape of the nanoparticles (NP) and the surface of the possible planar substrate (Sub) and other functional elements of the possible nanoparticles (NP) for aligning the nanoparticles (NP) relative to the movement direction (flow direction (FR)) of the colloidal lacquer and relative to the surface normal of the surface (OF) of the planar substrate (Sub) to be coated;

[0309] FS1 is an exemplary first sub-capturing structure of an exemplary capturing structure (FS). As an example, the first sub-capturing structure is used here as an example to reduce the chance of nanoparticles (NPs) escaping once captured;

[0310] FS2 An exemplary second sub-capture structure of an exemplary capture structure (FS). The exemplary second sub-capture structure is used for final positioning and alignment of captured nanoparticles (NP). The second sub-capture structure is preferably manufactured together with the first sub-capture structure (FS1) so that in cooperation with the first sub-capture structure, the capture of exactly one nanoparticle (NP) can be ensured. For example, the size can be selected so that after capturing a nanoparticle (NP) with a previously known geometry, no other nanoparticles (NP) are captured;

[0311] FZ color center. It can be, for example, an NV center (NV) in a diamond nanocrystal (ND) and / or an SiV center (SiV) in a diamond nanocrystal and / or an H3 center in a diamond nanocrystal;

[0312] GA gate connection = control electrode of an exemplary CMOS transistor;

[0313] GOX gate oxide of an exemplary CMOS transistor;

[0314] KL Gel mixture, also known as gel paint here;

[0315] The light-emitting area of ​​the LG MESA structure (MS);

[0316] LM solvent;

[0317] LS guide structure. The guide structure guides the movement of nanoparticles (NP) on the surface (OF) of the planar substrate (Sub) to be painted towards a target;

[0318] LWL1 first optical waveguide structure;

[0319] LWL2 second optical waveguide structure;

[0320] M2L An exemplary second metal layer of an exemplary CMOS transistor;

[0321] MS Mesa Structure. In the examples presented here, the MESA structure is an NPN transistor or PNP transistor with an extremely thin base that is highly doped and preferably operated in a breakdown regime so that hot electrons emit light;

[0322] ND Nanodiamond as an example of functional nanoparticles (NPs);

[0323] nG N-well of the photosensitive components of CMOS circuits;

[0324] NP nanoparticles. For example, they can be amorphous nanoparticles or nanocrystals. In particular, they can be nanodiamonds and / or nanosilicon crystals and / or nanoglass particles and / or other nanocrystals and / or general nanoparticles.

[0325] NV color centers in NV nanodiamonds (NDs), which are examples of color centers (FZs) in nanocrystals as exemplary nanoparticles (NPs);

[0326] NW is an N-well of an exemplary CMOS transistor;

[0327] The surface of the OF plane substrate (Sub);

[0328] oMS1 the first part of the second metal barrier;

[0329] oMS2 the second part of the second metal barrier;

[0330] pG is a cathode of an exemplary PN diode, which is used as an exemplary photosensitive member;

[0331] The rotation axis of the RA spin coater (SC);

[0332] SA symmetry axis;

[0333] SC Spin coater with turntable;

[0334] Sr: source region of an exemplary CMOS transistor;

[0335] SrK is a source contact of an exemplary CMOS transistor;

[0336] Sub-plane substrate, preferably a wafer;

[0337] TM carrier materials, such as gelatin;

[0338] uMS1 a first portion of a first metal barrier;

[0339] uMS2 the second part of the second metal barrier;

[0340] VR stirs or otherwise suitably mixes nanoparticles (NP) or nanodiamonds (ND) with a carrier material (TM);

[0341] An exemplary deposition substrate for producing functional nanoparticles (NPs). Figure 4 In the example, it is a silicon wafer.

Claims

1. A quantum technology, micro-electro-optical or photonic system comprising: A planar substrate (Sub), wherein the planar substrate (Sub) is a semiconductor crystal including a microelectronic circuit; Wherein, the system further comprises: Part of the FM, a partial region of the gelatinous membrane (FM) having at least one further crystal, wherein the other crystal comprises a color center (FZ), and Wherein, the further crystal is mechanically connected to the planar substrate (Sub) via the gelatinous membrane (FM).

2. The quantum technology, micro-electro-optical or photonic system according to claim 1, in, The other crystal includes diamond, and the diamond includes the color center (FZ).

3. The quantum technology, micro-electro-optical or photonic system according to claim 2, in, The other crystal is a diamond crystal, and wherein the color center (FZ) is an NV center, or wherein the color center (FZ) is a SiV center, or Therein, the color center (FZ) is an H3 center.

4. The quantum technology, micro-electro-optical or photonic system according to claim 3, in, The at least one other crystal is a nanoparticle (NP), and Wherein, the nanoparticles (NP) are diamond nanocrystals, and the crystal size of the diamond nanocrystals is less than 1 μm and / or less than 500 nm and / or less than 250 nm and / or less than 100 nm and / or less than 50 nm and / or less than 25 nm and / or less than 10 nm and / or less than 5 nm and / or less than 2.5 nm.

5. Quantum technology, micro-electro-optics or photonic system according to any one of claims 1 to 4, in, The planar substrate (Sub) includes one of the following materials: Semiconductor materials and / or Diamond and / or Glass and / or Ceramic and / or Metal and / or plastic.

6. The quantum technology, micro-electro-optical or photonic system according to claim 5, in, The planar substrate (Sub) includes one of the following materials: Silicon materials and / or GaAs material and / or IV material and / or III / V material and / or II / VI material and / or mixtures of these materials and / or Germanium material.

7. Quantum technology, micro-electro-optics or photonic systems according to any one of claims 1 to 4, in, The planar substrate (Sub) comprises at least one micro-optical functional element (LWL1, LWL2).

8. The quantum technology, micro-electro-optical or photonic system according to claim 7, in, The micro-optical functional element (LWL1, LWL2) is designed to satisfy at least one of the following functions of the micro-optical functional element: Function of optical lenses and / or Functionality of photonic crystals and / or The function of the filter and / or Optical total or partial reflection mirror function and / or Functionality of fiber optic waveguide structures and / or Directional coupler functionality and / or Wave pool features and / or Circulator function and / or Function of coupling and / or decoupling elements.

9. The quantum technology, micro-electro-optical or photonic system according to claim 7, in, The micro-optical functional elements (LWL1, LWL2) are designed to interact optically with the color center (FZ).

10. Quantum technology, micro-electro-optics or photonic systems according to any one of claims 1 to 4, in, The system comprises at least one photosensitive member (nG, pG).

11. The quantum technology, micro-electro-optical or photonic system according to claim 10, in, The photosensitive member (nG, pG) is designed to detect the luminescence of the color center (FZ).

12. The quantum technology, micro-electro-optical or photonic system according to claim 11, in, At least one operating parameter of the microelectronic circuit depends on the value of the luminescence of the color center (FZ) detected by the photosensitive member (nG, pG).

13. Quantum technology, micro-electro-optics or photonic systems according to any one of claims 1 to 4, in, The colloidal film (FM) is provided in the form of a colloidal lacquer (KL), wherein the colloidal lacquer containing crystals formed as nanoparticles (NP) with color centers (FZ) is cured in such a way that the colloidal film (FM) is sufficiently stable and structurable for further processing.

14. A production method for quantum technology, micro-electro-optics, microelectronics or photonic systems, the method comprising the following steps: Providing a flat substrate (Sub); Wherein, the method further comprises: providing a colloidal lacquer (KL) in the form of a colloidal solution of nanoparticles (NP) in a carrier medium (TM), wherein at least some of the nanoparticles (NP) or all of the nanoparticles have one or more color centers (FZ), and wherein the colloidal solution is designed to wet at least a portion of the planar substrate (Sub); Painting, printing or coating the planar substrate (Sub) with the colloidal lacquer (KL) to form a colloidal film (FM) on the surface (OF) of the planar substrate (Sub); curing and / or drying the gelatinous film (FM); and The gelatinous film (FM) is structured.

15. The method according to claim 14, in, The planar substrate (Sub) is or includes one of the following substrates: Semiconductor wafer and / or semiconductor substrate and / or Single crystal diamond wafers or polycrystalline diamond wafers and / or Glass wafers and / or Ceramic wafers and / or Metal sheets and / or Plastic board.

16. The method according to claim 15, in, The planar substrate (Sub) is or includes one of the following substrates: Silicon wafers and / or GaAs wafers and / or Wafers made of IV materials and / or III / V materials and / or II / VI materials and / or mixtures of these materials and / or Germanium wafer.

17. The method according to any one of claims 14 to 16, in, The planar substrate (Sub) is a semiconductor substrate, and Wherein, the method comprises the following additional steps: A method of manufacturing an electronic device on the semiconductor substrate is performed.

18. The method according to claim 17, in, The electronic device comprises a CMOS electronic device.

19. The method according to any one of claims 14 to 16, in, The structuring of the colloidal film is performed by plasma etching and / or wet chemical etching and / or gas phase etching.

20. Use of a colloidal mixture comprising a plurality of nanoparticles having color centers and a carrier material for assembling the nanoparticles in a CMOS microsystem and / or in a CMOS circuit.

21. The use according to claim 20, in, The carrier material comprises gelatin in aqueous solution.

22. The use according to claim 20 or 21, in, The assembly of the nanoparticles in a CMOS microsystem and / or in a CMOS circuit comprises a spin coating and / or printing process of the colloidal mixture.

23. The use according to claim 22, in, The assembly of the nanoparticles in a CMOS microsystem and / or in a CMOS circuit comprises a screen printing process and / or stencil printing and / or pad printing.

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