Imaging device

Abstract

There is provided an imaging apparatus including: a plurality of pixel sets arranged two-dimensionally in a plan view; wherein each pixel set of the plurality of pixel sets includes four photoelectric conversion regions, each pixel set of the plurality of pixel sets includes four overflow regions, each pixel set of the plurality of pixel sets is separated from each other by a first separation region in the plan view, and each pixel set of the plurality of pixel sets is separated from each other by a second separation region in the plan view. The four photoelectric conversion regions of each of the plurality of pixel sets are separated from each other by a second separation region.

Description

[0001] This application is a divisional application of a patent application with application number 201980044860.6, whose application date is July 8, 2019 and invention name is “Solid-state imaging device and electronic device”. Technical Field

[0002] The present technology relates to a solid-state imaging device and electronic equipment. Background Art

[0003] Generally, solid-state imaging devices such as CMOS (Complementary Metal Oxide Semiconductor) image sensors and CCD (Charge Coupled Device) are widely used in digital still cameras, digital video cameras, and the like.

[0004] The solid-state imaging device includes, for example, a photodiode and accumulates charge by photoelectric conversion. Here, as a focusing method of the solid-state imaging device, there are known methods: a high dynamic range operation that generates a captured image in a wide exposure area by performing different exposure controls; and an auto focus operation that divides a photodiode and performs addition of the same color between the divided photodiodes.

[0005] In an autofocus operation, for example, a photodiode is divided into two, light is received in each of the divided photodiodes, and when the number of signal electrons exceeding the accumulation capacity is received in one of the divided photodiodes, signal electrons of the same color overflow to the other divided photodiode.

[0006] Regarding the above technology, for example, Patent Document 1 discloses an imaging element including a plurality of photoelectric conversion units, a separation region separating the plurality of photoelectric conversion units, and a setting device for selectively setting the potential of the separation region (see Patent Document 1).

[0007] Citation list

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent Application Laid-Open No. 2013-041890 Summary of the invention

[0010] Problems to be solved by the present invention

[0011] An element for controlling the separation potential of divided photodiodes is added in the technology disclosed in Patent Document 1. However, in CMOS image sensors, as the refinement of sub-pixels progresses, it is difficult to secure an area for arranging an element that serves as a setting device.

[0012] In a pixel configuration in which sub-pixels are divided into one unit pixel, control with different exposure times between sub-pixels can be performed, and signals with different exposure times between sub-pixels can be synthesized, thereby expanding the dynamic range. However, it is not possible to achieve both a high dynamic range operation and an autofocus operation in which charges are added between sub-pixels of the same color.

[0013] Therefore, the present technology has been made in view of the above circumstances, and an object of the present technology is to provide a solid-state imaging device and electronic equipment that can achieve both high dynamic range operation and autofocus operation in a pixel structure in which a plurality of unit pixels each contain two or more sub-pixels.

[0014] Technical solutions to the problem

[0015] As a result of intensive studies to solve the above-mentioned problems, the present inventors have completed the present technology by successfully achieving both high dynamic range operation and autofocus operation in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels.

[0016] That is, in the present technology, first, there is provided a solid-state imaging device including:

[0017] A first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels;

[0018] a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and

[0019] an overflow region that causes signal charges accumulated in the sub-pixel to overflow to at least one of adjacent sub-pixels,

[0020] Here, the overflow region is formed between the first sub-pixel and the second sub-pixel.

[0021] In a solid-state imaging device according to the present technology, a first P-type region can be formed along the depth direction on the inner side of the first pixel separation region, a second P-type region can be formed along the depth direction around the second pixel separation region, and the first pixel separation region, the overflow region and the second pixel separation region can be formed to be included in a cross-section obtained by cutting the region of the unit pixel not separated by the second pixel separation region along the incident direction of light.

[0022] Moreover, the overflow region may have at least one of a third P-type region and a fourth P-type region, wherein the impurity concentration of the third P-type region is lower than the average impurity concentration of the first P-type region, and the impurity concentration of the fourth P-type region is lower than the average impurity concentration of the second P-type region.

[0023] In a solid-state imaging device according to the present technology, a first P-type region can be formed along the depth direction on the inner side of the first pixel separation region, a second P-type region can be formed along the depth direction around the second pixel separation region, an N-type region can be formed between the first P-type region and the second P-type region, and the first pixel separation region, the overflow region and the second pixel separation region can be formed to be included in a cross-section obtained by cutting the region of the unit pixel not separated by the second pixel separation region along the incident direction of light.

[0024] Moreover, the overflow region may have at least one of a third P-type region, a fourth P-type region and a fifth N-type region, the impurity concentration of the third P-type region is lower than the average impurity concentration of the first P-type region, the impurity concentration of the fourth P-type region is lower than the average impurity concentration of the second P-type region, and the fifth N-type region is formed between the third P-type region and the fourth P-type region.

[0025] In a solid-state imaging device according to the present technology, a first P-type region can be formed along the depth direction on the inner side of the first pixel separation region, and the overflow region can be formed between one inner side of the first pixel separation region and the other inner side of the first pixel separation region facing the one inner side, and included in a cross-section of the region of the unit pixel not separated by the second pixel separation region cut along the incident direction of light.

[0026] Furthermore, the depth of the overflow region may be formed so as to be located between a region where a transistor for controlling the overflow is arranged and a region having the highest impurity concentration among the N-type regions accumulating the signal charge.

[0027] The second pixel separation region included in the solid-state image pickup device according to the present technology can separate each of the plurality of unit pixels into the 2×2 sub-pixels.

[0028] The second pixel separation region included in the solid-state image pickup device according to the present technology may have a cross shape.

[0029] The overflow region provided in the solid-state image pickup device according to the present technology may be formed in a region in which the first pixel separation region and the second pixel separation region having the cross shape are close to each other.

[0030] In the solid-state image pickup device according to the present technology, the proximity distance between the first pixel separation region and the second pixel separation region having the cross shape may be the same or different.

[0031] At least a part of the second pixel separation region having the cross shape included in the solid-state image pickup device according to the present technology may be connected to the first pixel separation region.

[0032] The solid-state image pickup device according to the present technology may further include a transfer gate that performs voltage control for causing the signal charge to overflow.

[0033] Furthermore, the solid-state imaging device according to the present technology may further include a power supply that supplies voltages of three or more values ​​to the transfer gate.

[0034] Furthermore, the solid-state imaging device according to the present technology may further include a booster circuit for raising and lowering the voltage supplied to the transfer gate.

[0035] The second pixel separation region included in the solid-state image pickup device according to the present technology may penetrate from a light receiving surface that receives light to a silicon substrate on which a photoelectric conversion element that accumulates the signal charge is formed.

[0036] Furthermore, in the present technology, there is provided a solid-state imaging device including:

[0037] A first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels;

[0038] a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region;

[0039] A first light-collecting portion covering the entire unit pixel; and

[0040] A plurality of second light focusing portions respectively cover the sub-pixels.

[0041] In the solid-state image pickup device according to the present technology, the first light collecting section and the second light collecting section may be lenses.

[0042] In the solid-state image pickup device according to the present technology, the first light collecting section may be a lens.

[0043] Moreover, the second light-focusing portion may include: a light-shielding portion, which is arranged above the first pixel separation area and above the second pixel separation area; and a light-transmitting layer, which is located above the sub-pixel and is arranged in an area surrounded by the light-shielding portion, and the light-transmitting layer includes a material with a refractive index higher than that of the light-shielding portion.

[0044] In the solid-state imaging device according to the present technology, an intermediate layer may be further included, which is provided between the first light collecting portion and the light transmitting layer and includes a material having a refractive index higher than that of the first light collecting portion and lower than that of the light transmitting layer.

[0045] In the solid-state image pickup device according to the present technology, the light shielding portion provided above the first pixel separation region includes a material including at least one of a material having a refractive index lower than that of the light-transmitting layer and a metal.

[0046] Furthermore, the light shielding portion provided above the second pixel separation region includes a material having a refractive index lower than that of the light-transmitting layer.

[0047] The solid-state image pickup device according to the present technology may include a color filter provided between the sub-pixel and the second light collecting section.

[0048] Furthermore, in the present technology, there is provided an electronic device in which a solid-state imaging device is mounted.

[0049] The solid-state imaging device comprises:

[0050] A first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels;

[0051] a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and

[0052] an overflow region that causes signal charges accumulated in the sub-pixel to overflow to at least one of adjacent sub-pixels,

[0053] Also, the overflow region is formed between the first sub-pixel and the second sub-pixel.

[0054] Beneficial Effects of the Invention

[0055] According to the present technology, in a pixel structure in which a plurality of unit pixels each include two or more sub-pixels, both high dynamic range operation and autofocus operation can be achieved. Note that the effects described here are not necessarily restrictive, and may be any effect described in the present technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] Figure 1 : is a plan view showing the layout of a solid-state imaging device to which the first embodiment of the present technology is applied.

[0057] Figure 2 : is a plan view showing the layout of a solid-state imaging device to which the first embodiment of the present technology is applied.

[0058] Figure 3 : is a cross-sectional view showing a configuration example of an AA′ cross section of the solid-state imaging device to which the first embodiment of the present technology is applied.

[0059] Figure 4A-4C It is an explanatory diagram showing a potential distribution and an overflow state of the solid-state imaging device to which the first embodiment of the present technology is applied.

[0060] Figure 5A-Figure 5B It is an explanatory diagram showing the operational concept of the overflow area of ​​the solid-state imaging device to which the first embodiment of the present technology is applied.

[0061] Figure 6 : is a cross-sectional view showing a configuration example of an AA′ cross section of a solid-state imaging device to which the second embodiment of the present technology is applied.

[0062] Figure 7 : is a cross-sectional view showing a configuration example of a DD′ cross section of a solid-state imaging device to which the third embodiment of the present technology is applied.

[0063] Figure 8 is a plan view showing the layout of a solid-state imaging device to which the third embodiment of the present technology is applied.

[0064] Fig. 9 is a plan view showing the layout of a solid-state imaging device to which the third embodiment of the present technology is applied.

[0065] Figure 10A-10B : is a circuit diagram of a pixel circuit that reads a pixel signal of a solid-state imaging device according to a third embodiment to which the present technology is applied.

[0066] Figure 11A-11B : is a plan view showing the layout of a solid-state imaging device to which a fourth embodiment of the present technology is applied.

[0067] Figure 12A-12B : is a plan view showing the layout of a solid-state imaging device to which a fourth embodiment of the present technology is applied.

[0068] Figure 13A-13B : is a circuit diagram of a pixel circuit that reads a pixel signal of a solid-state imaging device according to a fourth embodiment to which the present technology is applied.

[0069] Figure 14A-Figure 14C: is a plan view showing an arrangement example of a first pixel separation region and a second pixel separation region in a solid-state image pickup device of a fifth embodiment to which the present technology is applied.

[0070] Figure 15A-15B : is a plan view showing a modification of the arrangement of the first pixel separation region and the second pixel separation region in the solid-state imaging device of the fifth embodiment to which the present technology is applied.

[0071] Figure 16A-16C 1 is a plan view showing a portion where an overflow region is formed.

[0072] Figure 17A-17C 1 is a plan view showing a portion where an overflow region is formed.

[0073] Fig.18 Yes Fig.14A The illustrated diagram is a plan view of an arrangement example in which first pixel separation regions and second pixel separation regions are arranged in an array.

[0074] Fig.19 It shows that Fig.18 The diagram shows an example of arranging color filters in an array-like arrangement of unit pixels.

[0075] Fig. 20 Yes Fig. 14B The arrangement example of the first pixel isolation region DTI1 and the second pixel isolation region DTI2 shown is a plan view in which they are arranged in an array shape.

[0076] Fig.21 It shows that Fig. 20 The illustrated plan view is an example of an array-like arrangement of unit pixels to arrange color filters.

[0077] Fig. 22 Yes Fig. 14C The arrangement example of the first pixel separation regions and the second pixel separation regions shown is a plan view in which they are arranged in an array.

[0078] Fig.23 It shows that Fig. 22 The example of arranging color filters by array-like arrangement of unit pixels is shown.

[0079] Fig.24 It shows Fig. 14B The example arrangement shown and Fig. 14C The arrangement example shown is a plan view of the devices arranged alternately in an array.

[0080] Fig.25 It shows that Fig.24 The illustrated plan view is an example of an array-like arrangement of unit pixels to arrange color filters.

[0081] Fig.26 It shows Fig. 14B The example arrangement shown and Fig. 14C The arrangement examples shown are alternately arranged in an array and arranged in a plan view aligned in the longitudinal direction in the same shape.

[0082] Fig. 27 It shows that Fig.26 The illustrated plan view is an example of an array-like arrangement of unit pixels to arrange color filters.

[0083] Fig.28 It shows Fig. 14B The example arrangement shown is arranged in a row horizontally. Fig. 14C The arrangement example shown is arranged in a row in the horizontal direction, and Fig. 14B The example arrangement shown and Fig. 14C The arrangement example shown is a plan view of the devices arranged alternately in an array.

[0084] Fig.29 It shows that Fig.28 The illustrated plan view is an example of an array-like arrangement of unit pixels to arrange color filters.

[0085] Fig.30 : is a block diagram showing a configuration example of a solid-state imaging device to which a sixth embodiment of the present technology is applied.

[0086] Figure 31A-Figure 31B : is a block diagram showing a configuration example of a solid-state imaging device to which a sixth embodiment of the present technology is applied.

[0087] Fig.32 : is a block diagram in which a part of the power supply circuit of the solid-state imaging device of the sixth embodiment to which the present technology is applied is constituted by a booster circuit.

[0088] Fig.33 : is a block diagram in which a part of the power supply circuit of the solid-state imaging device of the sixth embodiment to which the present technology is applied is constituted by a booster circuit.

[0089] Fig.34 : is a block diagram showing the configuration of a pixel array of a solid-state imaging device to which a sixth embodiment of the present technology is applied.

[0090] Fig.35 is a plan view showing the layout of a solid-state imaging device to which the seventh embodiment of the present technology is applied.

[0091] Fig.36 is a plan view showing the layout of a solid-state imaging device to which the seventh embodiment of the present technology is applied.

[0092] Fig.37 : is a cross-sectional view showing a configuration example of an EE' cross section of a solid-state imaging device to which the seventh embodiment of the present technology is applied.

[0093] Fig.38 is a plan view showing the layout of a solid-state imaging device to which the eighth embodiment of the present technology is applied.

[0094] Fig.39 : is a cross-sectional view showing a configuration example of an FF′ cross section of a solid-state image pickup device to which the eighth embodiment of the present technology is applied.

[0095] Fig.40 is a cross-sectional view showing a first modification example of the solid-state imaging device to which the eighth embodiment of the present technology is applied.

[0096] Fig.41 is a cross-sectional view showing a second modification of the solid-state imaging device to which the eighth embodiment of the present technology is applied.

[0097] Fig.42 : is a plan view showing the layout of a solid-state imaging device to which the ninth embodiment of the present technology is applied.

[0098] Fig.43 : is a plan view showing the layout of a solid-state imaging device to which the ninth embodiment of the present technology is applied.

[0099] Fig.44 : is a cross-sectional view showing a configuration example of a GG′ cross section of a solid-state imaging device to which a ninth embodiment of the present technology is applied.

[0100] Fig.45 is a cross-sectional view showing a first modification example of the solid-state imaging device to which the ninth embodiment of the present technology is applied.

[0101] Fig.46 is a cross-sectional view showing a second modification of the solid-state imaging device to which the ninth embodiment of the present technology is applied.

[0102] Fig.47 is a cross-sectional view showing a configuration example of a cross section of a solid-state imaging device to which a tenth embodiment of the present technology is applied.

[0103] Fig.48 is a cross-sectional view showing a configuration example of a cross section of a solid-state imaging device to which a tenth embodiment of the present technology is applied.

[0104] Fig.49 is a cross-sectional view showing a configuration example of a cross section of a solid-state imaging device to which a tenth embodiment of the present technology is applied.

[0105] Fig.50is a cross-sectional view showing a configuration example of a cross section of a solid-state imaging device to which a tenth embodiment of the present technology is applied.

[0106] Fig.51 is a plan view showing the layout of a solid-state imaging device to which an eleventh embodiment of the present technology is applied.

[0107] Fig.52 It is a diagram showing a use example of a solid-state imaging device to which the first to eleventh embodiments of the present technology are applied.

[0108] Fig.53 is a functional block diagram of an example of an electronic device to which the present technology is applied. DETAILED DESCRIPTION

[0109] Hereinafter, preferred embodiments for implementing the present technology will be described. The embodiments to be described below represent examples of representative embodiments of the present technology, and the scope of the present invention is not to be narrowly interpreted by the embodiments to be described below.

[0110] Note that the description will be given in the following order.

[0111] 1. Overview of this technology

[0112] 2. First Embodiment (Example 1 of Solid-State Image Pickup Device)

[0113] 3. Second Embodiment (Example 2 of Solid-State Image Pickup Device)

[0114] 4. Third Embodiment (Example 3 of Solid-State Image Pickup Device)

[0115] 5. Fourth Embodiment (Example 4 of Solid-State Image Pickup Device)

[0116] 6. Fifth Embodiment (Example 5 of Solid-State Image Pickup Device)

[0117] 7. Sixth Embodiment (Example 6 of Solid-State Image Pickup Device)

[0118] 8. Seventh Embodiment (Example 7 of Solid-State Image Pickup Device)

[0119] 9. Eighth Embodiment (Example 8 of Solid-State Image Pickup Device)

[0120] 10. Ninth Embodiment (Example 9 of Solid-State Image Pickup Device)

[0121] 11. Tenth Embodiment (Example 10 of Solid-State Image Pickup Device)

[0122] 12. Eleventh Embodiment (Example 11 of Solid-State Image Pickup Device)

[0123] 13. Twelfth Embodiment (Example of Electronic Equipment)

[0124] 14. Example of use of a solid-state imaging device to which this technology is applied

[0125] <1. Overview of this technology>

[0126] The present technology relates to a solid-state imaging device such as a CMOS (Complementary Metal Oxide Semiconductor) image sensor or a CCD (Charge Coupled Device), and to a solid-state imaging device and an electronic device capable of realizing both a high dynamic range operation and an autofocus operation in a pixel structure in which a plurality of unit pixels each include two or more sub-pixels. According to the present technology, in a pixel structure in which a plurality of unit pixels each include two or more sub-pixels, both a high dynamic range operation and an autofocus operation can be achieved, thereby improving image quality.

[0127] For example, in a conventional dual-pixel autofocus pixel configuration, a photodiode is divided into two. Each of the divided photodiodes (referred to as a divided photodiode) receives light that has passed halfway through the coupling optical system. In the autofocus pixel configuration, two images are generated from each divided photodiode, the distance is measured by detecting the offset between the two images, and the focus of the image is aligned by signal processing in a subsequent stage.

[0128] In this case, in the case where the amount of light received in the divided photodiode is large so that the number of signal electrons received exceeds the accumulation capacity of the divided photodiode, if the excess electrons overflow to the floating diffusion (FD: Floating Diffusion) and are discarded, nonlinearity may appear in the image. Therefore, it has been studied to set the separation potential between the divided photodiodes so that the signal electrons do not overflow from the divided photodiode that has received a large amount of light into the floating diffusion, but overflow between the divided photodiodes.

[0129] Here, in a pixel configuration in which sub-pixels are arranged into which one pixel is divided, control with different exposure times between sub-pixels can be performed, and signals with different exposure times between sub-pixels can be synthesized to expand the dynamic range. However, it is not possible to take into account both high dynamic range operation and autofocus operation of adding charges between sub-pixels of the same color.

[0130] For example, in a pixel structure in which sub-pixels are arranged into which one pixel is divided, if a separation potential is set to allow signal electrons to overflow between sub-pixels when the amount of light is large, and a high dynamic range operation for performing control with different exposure times between sub-pixels is performed, the number of signal electrons accumulated in the sub-pixels may be significantly reduced, and the signal-to-noise ratio (SN) on the playback image may be reduced. In addition, the above problem can be avoided by arranging an element such as a MOS (Metal Oxide Silicon) gate in a separation area between sub-pixels and applying different voltages to the gate during autofocus operation and during high dynamic range operation to modulate the separation potential, but there is no space in a refined pixel image sensor for additionally arranging an element for controlling the separation potential.

[0131] Therefore, the present technology is made in view of the above situation, and the purpose of the present technology is to provide a solid-state camera device and electronic equipment that can achieve both high dynamic range operation and autofocus operation in a pixel structure in which multiple unit pixels each include more than two sub-pixels without adding components.

[0132] <2. First Embodiment (Example 1 of Solid-State Image Pickup Device)>

[0133] A solid-state imaging device according to a first embodiment of the present technology is a solid-state imaging device comprising: a first pixel separation region which separates a plurality of unit pixels each comprising two or more sub-pixels; a second pixel separation region which separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region which causes the signal charge accumulated in the sub-pixel to overflow to at least one of the adjacent sub-pixels, wherein the overflow region is formed between the first sub-pixel and the second sub-pixel.

[0134] According to the solid-state image pickup device of the first embodiment of the present technology, it is possible to realize both a high dynamic range operation and an autofocus operation in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels.

[0135] Figure 1 The layout of a solid-state image pickup device 1000 as an example of the solid-state image pickup device according to the first embodiment of the present technology is shown. Figure 1 2 is a plan view of a solid-state imaging device 1000 including four pixels. Figure 2 The layout of a solid-state imaging device 100 which is an example of a solid-state imaging device according to the first embodiment of the present technology is shown. Figure 2 1 is a plan view of the solid-state imaging device 100 constituting one pixel. Unless otherwise specified, "upper" refers to the upper direction in each figure, and "lower" refers to the lower direction in each figure.

[0136] The solid-state imaging device 1000 includes four solid-state imaging devices 100 (2×2) Figure 1 1 to 104 in the solid-state imaging device 100). The solid-state imaging device 101 is provided with a color filter CF1. The solid-state imaging device 102 is provided with a color filter CF2. The solid-state imaging device 103 is provided with a color filter CF3. The solid-state imaging device 104 is provided with a color filter CF4. As a plan view of the layout of the solid-state imaging device 100, Figure 2 A plan view showing the layout of the solid-state imaging device 101 .

[0137] The solid-state imaging device 100 includes: a first pixel separation region DTI1, which separates a plurality of unit pixels each including two or more sub-pixels; a second pixel separation region DTI2, which separates each of the plurality of unit pixels separated by the first pixel separation region DTI1; and an overflow region (overflow region OF1 to overflow region OF4), which causes the signal charge accumulated in the sub-pixel to overflow to at least one of the adjacent sub-pixels.

[0138] The overflow region OF1 is formed between the first subpixel SP1 and the second subpixel SP2. The overflow region OF2 is formed between the second subpixel SP2 and the fourth subpixel SP4. The overflow region OF3 is formed between the third subpixel SP3 and the fourth subpixel SP4. The overflow region OF4 is formed between the first subpixel SP1 and the third subpixel SP3.

[0139] The first pixel isolation region DTI1 separates a plurality of unit pixels each including two or more sub-pixels.

[0140] The second pixel separation region DTI2 separates each of the plurality of unit pixels separated by the first pixel separation region DTI1. In addition, the second pixel separation region DTI2 separates each of the plurality of unit pixels into 2×2 sub-pixels. In this case, for example, the second pixel separation region DTI2 may have a cross shape.

[0141] In addition, there is a separation layer between the four sub-pixels SP (the first sub-pixel SP1 to the fourth sub-pixel SP4), which separates the sub-pixel photodiodes by penetrating from the light receiving side silicon surface that receives light to the substrate side surface. That is, the sub-pixel SP is formed in the region from the light receiving side silicon surface to the substrate side surface (not shown).

[0142] The overflow region OF (overflow region OF1 to OF4) is a region for causing signal charges accumulated in the subpixels SP (first to fourth subpixels SP1 to SP4) to overflow to at least one of the adjacent subpixels SP (first to fourth subpixels SP1 to SP4).

[0143] In the solid-state imaging device 100 according to the first embodiment of the present technology, for example, one unit pixel (i.e., one pixel) includes four sub-pixels SP (first sub-pixel SP1 to fourth sub-pixel SP4). Note that the sub-pixel SP is a fine pixel forming a unit pixel, and the number of sub-pixels SP is not limited to four. For example, one unit pixel may include two sub-pixels, or one unit pixel may include eight sub-pixels.

[0144] like Figure 2 As shown, the solid-state image pickup device 100 includes four sub-pixels SP (first sub-pixel SP1 to fourth sub-pixel SP4 ), and has four overflow regions OF (overflow region OF1 to overflow region OF4 ).

[0145] The sub-pixels SP (first to fourth sub-pixels SP1 to SP4 ) have photodiodes (photoelectric conversion elements) that photoelectrically convert received light into photocharges having a charge amount corresponding to the light amount and accumulate the photocharges.

[0146] The transistor TR1 includes transistors for constituting a signal readout circuit, such as a reset transistor, an amplifier transistor, and a selection transistor. The reset transistor is a transistor (RST transistor) that sets the power supply voltage so that the potential of the floating diffusion FD becomes a reference potential before the signal charge is read out from the photodiode to the floating diffusion FD. The amplifier transistor is a transistor (AMP transistor) that reads out the voltage signal of the FD (Floating Diffusion) to a signal line provided for each column of the pixel array. The selection transistor is a transistor (SEL transistor) that selectively reads out the signal from the pixel array row by row.

[0147] The transfer gate TG1 is a transistor for reading out the signal charge accumulated in the photodiode to the floating diffusion FD.

[0148] The overflow region OF1 is a region formed between the first subpixel SP1 and the second subpixel SP2. The overflow region OF1 is a region for causing signal charges accumulated in the first subpixel SP1 or the second subpixel SP2 to overflow to an adjacent subpixel (ie, the second subpixel SP2 or the first subpixel SP1).

[0149] The transistor TR2 includes transistors for constituting a signal readout circuit, such as a reset transistor, an amplifier transistor, and a selection transistor. The reset transistor is a transistor (RST transistor) that sets the power supply voltage so that the potential of the floating diffusion FD becomes a reference potential before the signal charge is read out from the photodiode to the floating diffusion FD. The amplifier transistor is a transistor (AMP transistor) that reads out the voltage signal of the FD (floating diffusion) to a signal line provided for each column of the pixel array. The selection transistor is a transistor (SEL transistor) that selectively reads out the signal from the pixel array row by row.

[0150] The transfer gate TG2 is a transistor for reading out the signal charge accumulated in the photodiode to the floating diffusion FD.

[0151] The overflow region OF2 is a region formed between the second subpixel SP2 and the fourth subpixel SP4. The overflow region OF2 is a region for causing signal charges accumulated in the second subpixel SP2 or the fourth subpixel SP4 to overflow to an adjacent subpixel (ie, the fourth subpixel SP4 or the second subpixel SP2).

[0152] The transistor TR3 includes transistors for constituting a signal readout circuit, such as a reset transistor, an amplifier transistor, and a selection transistor. The reset transistor is a transistor (RST transistor) that sets the power supply voltage so that the potential of the floating diffusion FD becomes a reference potential before the signal charge is read out from the photodiode to the floating diffusion FD. The amplifier transistor is a transistor (AMP transistor) that reads out the voltage signal of the FD (floating diffusion) to a signal line provided for each column of the pixel array. The selection transistor is a transistor (SEL transistor) that selectively reads out the signal from the pixel array row by row.

[0153] The transfer gate TG3 is a transistor for reading out the signal charge accumulated in the photodiode to the floating diffusion FD.

[0154] The overflow region OF3 is a region formed between the third subpixel SP3 and the fourth subpixel SP4. The overflow region OF3 is a region for causing signal charges accumulated in the third subpixel SP3 or the fourth subpixel SP4 to overflow to an adjacent subpixel (ie, the fourth subpixel SP4 or the third subpixel SP3).

[0155] The transistor TR4 includes transistors for constituting a signal readout circuit, such as a reset transistor, an amplifier transistor, and a selection transistor. The reset transistor is a transistor (RST transistor) that sets the power supply voltage so that the potential of the floating diffusion FD becomes a reference potential before the signal charge is read out from the photodiode to the floating diffusion FD. The amplifier transistor is a transistor (AMP transistor) that reads out the voltage signal of the FD (floating diffusion) to a signal line provided for each column of the pixel array. The selection transistor is a transistor (SEL transistor) that selectively reads out the signal from the pixel array row by row.

[0156] The transfer gate TG4 is a transistor for reading out the signal charge accumulated in the photodiode to the floating diffusion FD.

[0157] The overflow region OF4 is a region formed between the third subpixel SP3 and the first subpixel SP1. The overflow region OF4 is a region for causing signal charges accumulated in the third subpixel SP3 or the first subpixel SP1 to overflow to an adjacent subpixel (ie, the first subpixel SP1 or the third subpixel SP3).

[0158] All the sub-pixels SP (first to fourth sub-pixels SP1 to SP4 ) are formed in a similar configuration.

[0159] The solid-state imaging device according to the first embodiment is a solid-state imaging device in which a first P-type region is formed inside a first pixel separation region along a depth direction, a second P-type region is formed around a second pixel separation region along a depth direction, and the first pixel separation region, the overflow region, and the second pixel separation region are formed to be included in a cross section cutting a unit pixel along a direction of incidence of light, and the overflow region has at least one of a third P-type region and a fourth P-type region, the impurity concentration of the third P-type region is lower than the average impurity concentration of the first P-type region, and the impurity concentration of the fourth P-type region is lower than the average impurity concentration of the second P-type region.

[0160] Figure 3 The configuration of a cross section of a solid-state imaging device 100 to which the first embodiment of the present technology is applied is shown. Figure 3 yes Figure 2 1 is a cross-sectional view of a configuration example of an AA′ cross section of the solid-state imaging device 100 shown in FIG. Figure 3 The upward direction in the Figure 3 The downward direction in .

[0161] In the solid-state imaging device 100, a first P-type region PR1 is formed in the depth direction inside the first pixel separation region DTI1, and a second P-type region PR2 is formed in the depth direction around the second pixel separation region DTI2. In the solid-state imaging device 100, the first pixel separation region DTI1, the overflow region OF1, and the second pixel separation region DTI2 are formed to be included in a cross section of a unit pixel region not separated by the second pixel separation region DTI2 cut along the incident direction of light. In addition, the overflow region OF1 has at least one of a third P-type region PR3 and a fourth P-type region PR4, the impurity concentration of the third P-type region PR3 is lower than the average impurity concentration of the first P-type region PR1, and the impurity concentration of the fourth P-type region PR4 is lower than the average impurity concentration of the second P-type region PR2.

[0162] The first P-type region PR1 and the second P-type region PR2 correspond to a separation layer that separates the photodiode. The overflow region OF1 is formed in a region of the separation layer that does not separate the photodiode, and signal electrons (charges) when the light intensity is large can overflow between sub-pixels that are not separated.

[0163] In addition, the second pixel separation area DTI2 penetrates from the light receiving surface that receives light to the silicon substrate on which the photoelectric conversion element (photodiode) that accumulates signal charge is formed. In this case, by adopting a structure in which the second pixel separation area DTI2 penetrates to the silicon substrate, crosstalk between sub-pixels caused by diffusion of photoelectrons on the silicon surface side and leakage of incident light can be reduced.

[0164] Figure 4A-4C There are shown potential distribution and overflow state of the solid-state imaging device 100 to which the first embodiment of the present technology is applied. Figure 4A-4C 1 is an explanatory diagram showing a potential distribution and an overflow state of the solid-state imaging device 100. Note that, unless otherwise specified, “up” refers to Figure 4A-4C The upward direction in the Figure 4A-4C The downward direction in .

[0165] exist Figure 4A-4C middle, Figure 4A 2 shows the pixel potential distribution of the solid-state imaging device 100. Figure 4B BB' cross section of the solid-state imaging device 100 is shown. Figure 4C The CC′ cross section of the solid-state imaging device 100 is shown.

[0166] also, Figure 4B shows the potential distribution of the separation layer including the second pixel separation region DTI2, Figure 4C The potential distribution of the region not separated by the second pixel separation region DTI2 is shown.

[0167] exist Figure 4B In the case of , if -0.5 [v] is applied to the transfer gate TG, ion implantation is performed so that the channel potential of the transfer gate TG becomes higher than the separation potential between the sub-pixels. On the other hand, in Figure 4C In the case of , if -1.5 [v] is applied to the transfer gate TG, the channel potential of the transfer gate TG becomes lower than the separation potential between the sub-pixels.

[0168] As mentioned above, in Figure 4B In the embodiment, since a potential barrier PB (potential barrier) is provided by ion implantation, signal charges can be discharged from the transfer gate TG to the floating diffusion FD. Figure 4C In this case, there is no potential barrier PB, and the signal charge overflows via the overflow region OF1.

[0169] Figure 5A-Figure 5B The concept of the high dynamic range operation and the concept of the overflow operation of the solid-state imaging device 100 to which the first embodiment of the present technology is applied are shown. Figure 5A-Figure 5B is an explanatory diagram showing the concept of high dynamic range operation and the concept of overflow operation. Note that unless otherwise specified, "upper" refers to Figure 5A-Figure 5B The up direction in the sentence, “down” refers to Figure 5A-Figure 5B The downward direction in .

[0170] exist Figure 5A-Figure 5B middle, Figure 5A The concept of high dynamic range operation of the solid-state imaging device 100 is shown. Figure 5B The concept of the overflow operation of the solid-state imaging device 100 is shown.

[0171] like Figure 5A As shown, the first sub-pixel SP1 has a photodiode PD1, a transfer gate TG1 and a floating diffusion FD1. The second sub-pixel SP2 has a photodiode PD2, a transfer gate TG2 and a floating diffusion FD2. In addition, the first sub-pixel SP1 and the second sub-pixel SP2 are separated by an overflow barrier OFB. In addition, an on-chip lens OCL (on-chip lens) is provided above the first sub-pixel SP1 and the second sub-pixel SP2.

[0172] In the high dynamic range operation, -0.5 [V] as the intermediate potential is applied to the transfer gate TG1 and the transfer gate TG2. In addition, due to the injection of ions, the potentials of the transfer gates TG1 and TG2 become lower than the separation potential of the overflow barrier OFB. In this case, signal charges are accumulated in the photodiode PD1 of the first sub-pixel SP1, and signal charges are also accumulated in the photodiode PD2 of the second sub-pixel SP2. When a large amount of light is received, for example, if the signal charge accumulated in the photodiode PD1 exceeds the allowable capacity, the signal charge is discharged from the transfer gate TG1 to the floating diffusion FD1.

[0173] On the other hand, Figure 5B As shown, in the overflow operation, -1.5 [v] is applied to the transfer gate TG1 and the transfer gate TG2. In this case, the potentials of the transfer gates TG1 and TG2 become higher than the separation potential of the overflow barrier OFB. As a result, signal charges are accumulated in the photodiode PD1 of the first sub-pixel SP1, and signal charges are also accumulated in the photodiode PD2 of the second sub-pixel SP2. When receiving a large amount of light, for example, if the signal charge accumulated in the photodiode PD1 exceeds the allowable capacity, the signal charge exceeds the overflow barrier OFB and overflows to the photodiode PD2 of the second sub-pixel SP2.

[0174] As described above, the solid-state imaging device 100 to which the first embodiment of the present technology is applied includes an overflow region OF (overflow region OF1 to overflow region OF4) for causing the signal charge accumulated in the sub-pixel SP (the first sub-pixel SP1 to the fourth sub-pixel SP4) to overflow to at least one of the adjacent sub-pixels. In addition, for example, an overflow region OF (overflow region OF1 to overflow region OF4) is formed between the first sub-pixel SP1 and the second sub-pixel SP2.

[0175] According to the solid-state imaging device 100 of the first embodiment of the present technology, both high dynamic range operation and auto focus operation can be achieved in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels SP (first to fourth sub-pixels SP1 to SP4 ).

[0176] Furthermore, in the solid-state imaging device 100 according to the first embodiment of the present technology, a first P-type region PR1 is formed in the depth direction inside the first pixel separation region DTI1, and a second P-type region PR2 is formed in the depth direction around the second pixel separation region DTI2. In the solid-state imaging device 100, the first pixel separation region DTI1, the overflow region OF1, and the second pixel separation region DTI2 are formed to be included in a cross section in which a region of a unit pixel not separated by the second pixel separation region DTI2 is cut along the incident direction of light. Then, the overflow region OF1 has at least one of a third P-type region PR3 having an impurity concentration lower than the average impurity concentration of the first P-type region PR1 and a fourth P-type region PR4 having an impurity concentration lower than the average impurity concentration of the second P-type region PR2.

[0177] According to the solid-state imaging device 100 of the first embodiment of the present technology, since the overflow region OF1 has at least one of the third P-type region PR3 and the fourth P-type region PR4, the impurity concentration of the third P-type region PR3 is lower than the average impurity concentration of the first P-type region PR1, and the impurity concentration of the fourth P-type region PR4 is lower than the average impurity concentration of the second P-type region PR2, it is possible to cause the signal charge to overflow.

[0178] <3. Second Embodiment (Example 2 of Solid-State Image Pickup Device)>

[0179] A solid-state imaging device according to a second embodiment of the present technology is a solid-state imaging device in which a first P-type region is formed along a depth direction on the inner side of a first pixel separation region, a second P-type region is formed along a depth direction around a second pixel separation region, an N-type region is formed between the first P-type region and the second P-type region, and the first pixel separation region, the overflow region, and the second pixel separation region are formed to be included in a cross section obtained by cutting a region of a unit pixel not separated by the second pixel separation region along a direction of incidence of light, and the overflow region has at least one of a third P-type region, a fourth P-type region, and a fifth N-type region, the impurity concentration of the third P-type region is lower than the average impurity concentration of the first P-type region, the impurity concentration of the fourth P-type region is lower than the average impurity concentration of the second P-type region, and the fifth N-type region is formed between the third P-type region and the fourth P-type region.

[0180] According to the solid-state imaging device of the second embodiment of the present technology, the overflow region is formed to have at least one of a third P-type region, a fourth P-type region, and a fifth N-type region, wherein the impurity concentration of the third P-type region is lower than the average impurity concentration of the first P-type region, the impurity concentration of the fourth P-type region is lower than the average impurity concentration of the second P-type region, and the fifth N-type region is formed between the third P-type region and the fourth P-type region. Therefore, both high dynamic range operation and autofocus operation can be achieved.

[0181] Figure 6 The configuration of a cross section of a solid-state imaging device 101 according to the second embodiment to which the present technology is applied is shown. Figure 6 The solid-state imaging device 101 is shown in FIG. Figure 2 The cross-sectional view of another configuration example of the AA′ cross-section shown in FIG. Note that, unless otherwise specified, “upper” refers to Figure 6 The up direction in the sentence, “down” refers to Figure 6 The downward direction in .

[0182] In the solid-state imaging device 101, a first P-type region PR1 is formed in the depth direction inside the first pixel isolation region DTI1, a second P-type region PR2 is formed in the depth direction around the second pixel isolation region DTI2, and an N-type region NR is formed between the first P-type region PR1 and the second P-type region PR2. In addition, in the solid-state imaging device 101, the first pixel isolation region DTI1, the overflow region OF1, and the second pixel isolation region DTI2 are formed so as to be included in a cross section obtained by cutting the region of the unit pixel not separated by the second pixel isolation region DTI2 in the incident direction of light. In the solid-state imaging device 101, the overflow region OF1 has at least one of a third P-type region PR3, a fourth P-type region PR4, and a fifth N-type region NC, wherein the impurity concentration of the third P-type region PR3 is lower than the average impurity concentration of the first P-type region PR1, the impurity concentration of the fourth P-type region PR4 is lower than the average impurity concentration of the second P-type region PR2, and the fifth N-type region NC is formed between the third P-type region PR3 and the fourth P-type region PR4.

[0183] The first P-type region PR1, the second P-type region PR2, and the N-type region NR are equivalent to a separation layer that separates the photodiode. In this case, the overflow region OF1 is formed in a region of the separation layer that does not separate the photodiode, and signal electrons (charges) when the amount of light is large can overflow between sub-pixels that are not separated.

[0184] In particular, the junction capacitance between the p-type layer and the n-type layer can be formed by the third P-type region PR3 , the fourth P-type region PR4 , and the fifth N-type region NC, and thus can be a part of the cumulative capacity of the photodiode.

[0185] As described above, the solid-state imaging device 101 to which the second embodiment of the present technology is applied includes an overflow region OF (overflow region OF1 to overflow region OF4) that causes signal charge to overflow. In addition, for example, an overflow region OF (overflow region OF1 to overflow region OF4) is formed between the first sub-pixel SP1 and the second sub-pixel SP2.

[0186] According to the solid-state imaging device 101 of the second embodiment of the present technology, both high dynamic range operation and auto focus operation can be achieved in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels SP (first to fourth sub-pixels SP1 to SP4 ).

[0187] <4. Third Embodiment (Example 3 of Solid-State Image Pickup Device)>

[0188] A solid-state imaging device according to a third embodiment of the present technology is a solid-state imaging device in which a first P-type region is formed in the depth direction inside a first pixel separation region, and the overflow region is formed between one inner side of the first pixel separation region and another inner side of the first pixel separation region facing the one inner side, and is included in a cross section of a region of the unit pixel not separated by the second pixel separation region in the incident direction of light. The depth of the overflow region is formed to be located between two regions: one is a region where a transistor for controlling the overflow is arranged, and the other is a region with the highest impurity concentration among the N-type regions that accumulate the signal charge.

[0189] According to the solid-state imaging device of the third embodiment of the present technology, an overflow region can be formed between one inner side of the first pixel separation region and the other inner side of the first pixel separation region facing the one inner side, thereby achieving both high dynamic range operation and autofocus operation.

[0190] Figure 7 A configuration of a cross section of a solid-state imaging device 102 according to a third embodiment to which the present technology is applied is shown. Figure 7 : is a cross-sectional view showing a configuration example of a solid-state imaging device 102 of a third embodiment to which the present technology is applied. Figure 7 It shows that according to Figure 8 1 is a cross-sectional view of a configuration example of a DD' section of the solid-state imaging device 102 of the third embodiment shown in FIG. Note that, unless otherwise specified, "upper" refers to the Figure 7 The up direction in the sentence, “down” refers to Figure 7 The downward direction in .

[0191] Notice, Figure 8 It is used to illustrate Figure 7 The location of the cross section is shown in the figure, and Figure 8The basic structure and Figure 2 The basic configuration is the same as in . In addition, the regions of the photodiode PD1, the photodiode PD2, the photodiode PD3, and the photodiode PD4 represent regions where the respective photodiodes are formed. In addition, the same components will be denoted by the same reference numerals, and the description thereof will be appropriately omitted.

[0192] like Figure 7 As shown, in the solid-state imaging device 102, a first P-type region is formed in the depth direction inside the first pixel separation region DTI1, and an overflow region OF1 is formed between one inner side of the first pixel separation region DTI1 and the other inner side of the first pixel separation region DTI1 facing the one inner side, and is included in a cross section of a region of a unit pixel not separated by the second pixel separation region DTI2 cut along the incident direction of light. Then, the depth of the overflow region OF1 is formed to be located between the following two regions: one is the region JD where the transistor for controlling overflow is arranged, and the other is the region CD1 with the highest impurity concentration among the N-type region CD2 that accumulates signal charges.

[0193] The junction depth JD indicates the depth of the source / drain region of a metal oxide semiconductor (MOS) transistor. The high impurity concentration portion CD1 indicates a portion where the impurity concentration is highest in the N-type region for forming the photodiode PD1 and the photodiode PD2.

[0194] As described above, the solid-state imaging device 102 to which the third embodiment of the present technology is applied includes an overflow region OF (overflow region OF1 to overflow region OF4) that causes signal charge to overflow. In addition, an overflow region OF (overflow region OF1 to overflow region OF4) is formed between the first sub-pixel SP1 and the second sub-pixel SP2.

[0195] According to the solid-state imaging device 102 of the third embodiment of the present technology, both high dynamic range operation and auto focus operation can be achieved in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels SP (first to fourth sub-pixels SP1 to SP4 ).

[0196] <5. Fourth Embodiment (Example 4 of Solid-State Image Pickup Device)>

[0197] A solid-state image pickup device according to a fourth embodiment of the present technology is a solid-state image pickup device further including a transfer gate that performs voltage control for causing signal charges to overflow.

[0198] The solid-state image pickup device according to the fourth embodiment of the present technology can cause signal charges to overflow by having a transfer gate.

[0199] Fig. 9There is shown a layout of a solid-state imaging device 100 which is an example of a solid-state imaging device according to a third embodiment of the present technology. Fig. 9 is a plan view of the solid-state imaging device 100 .

[0200] like Fig. 9 As shown, the transistor TR1 includes transistors such as a reset transistor, an amplifier transistor, and a selection transistor for constituting a signal readout circuit. The reset transistor is a transistor (RST transistor) that sets the power supply voltage so that the potential of the floating diffusion FD1 becomes a reference potential before the signal charge is read out from the photodiode to the floating diffusion FD1. The amplifier transistor is a transistor (AMP transistor) that reads out the voltage signal of the FD (floating diffusion) to a signal line provided for each column of the pixel array. The selection transistor is a transistor (SEL transistor) that selectively reads out the signal from the pixel array row by row.

[0201] The transfer gate TG1 is a transistor for reading out the signal charge accumulated in the photodiode to the floating diffusion FD1 .

[0202] The transistor TR2 includes transistors for constituting a signal readout circuit, such as a reset transistor, an amplifier transistor, and a selection transistor. The reset transistor is a transistor (RST transistor) that sets the power supply voltage so that the potential of the floating diffusion FD2 becomes a reference potential before the signal charge is read out from the photodiode to the floating diffusion FD2. The amplifier transistor is a transistor (AMP transistor) that reads out the voltage signal of the FD (floating diffusion) to a signal line provided for each column of the pixel array. The selection transistor is a transistor (SEL transistor) that selectively reads out the signal from the pixel array row by row.

[0203] The transfer gate TG2 is a transistor for reading out the signal charge accumulated in the photodiode to the floating diffusion FD2 .

[0204] The transistor TR3 includes transistors for constituting a signal readout circuit, such as a reset transistor, an amplifier transistor, and a selection transistor. The reset transistor is a transistor (RST transistor) that sets the power supply voltage so that the potential of the floating diffusion FD3 becomes a reference potential before the signal charge is read out from the photodiode to the floating diffusion FD3. The amplifier transistor is a transistor (AMP transistor) that reads out the voltage signal of the FD (floating diffusion) to a signal line provided for each column of the pixel array. The selection transistor is a transistor (SEL transistor) that selectively reads out the signal from the pixel array row by row.

[0205] The transfer gate TG3 is a transistor for reading out the signal charge accumulated in the photodiode to the floating diffusion FD3 .

[0206] The transistor TR4 includes transistors such as a reset transistor, an amplifier transistor, and a selection transistor for constituting a signal readout circuit. The reset transistor is a transistor (RST transistor) that sets the power supply voltage so that the potential of the floating diffusion FD4 becomes a reference potential before the signal charge is read out from the photodiode to the floating diffusion FD4. The amplifier transistor is a transistor (AMP transistor) that reads out the voltage signal of the FD (floating diffusion) to a signal line provided for each column of the pixel array. The selection transistor is a transistor (SEL transistor) that selectively reads out the signal from the pixel array row by row.

[0207] The transfer gate TG4 is a transistor for reading out the signal charge accumulated in the photodiode to the floating diffusion FD4 .

[0208] Figure 10A-10B A pixel circuit that reads a pixel signal of the solid-state imaging device according to the third embodiment of the present technology is shown. Figure 10A-10B 1 is a circuit diagram showing a pixel circuit for reading pixel signals of the solid-state imaging device of the third embodiment. Figure 10A-10B middle, Fig. 10A shows a circuit diagram of a pixel circuit, Fig. 10B A timing diagram is shown.

[0209] exist Fig. 10A In the example of , the pixel circuit includes a photodiode PD1, a photodiode PD2, a photodiode PD3, and a photodiode PD4. In this case, the unit pixel includes four pixels (four sub-pixels). The photodiode PD1, the photodiode PD2, the photodiode PD3, and the photodiode PD4 may have the same characteristics as each other, but may also have different characteristics from each other. For example, some or all of these photodiodes PD1, photodiode PD2, photodiode PD3, and photodiode PD4 may perform photoelectric conversion on incident light of a wavelength band different from that of other photodiodes.

[0210] exist Fig. 10A In the embodiment, the unit pixel includes a transmission gate TG1, a transmission gate TG2, a transmission gate TG3 and a transmission gate TG4.

[0211] Fig. 10A The pixel circuit shown controls the reading of photocharges from the photodiodes PD1 , PD2 , PD3 , and PD4 based on the transfer gates TG1 , TG2 , TG3 , and TG4 . The capacitance Cfd is the capacitance of the floating diffusion.

[0212] The floating diffusion (FD), reset transistor, amplifier transistor, and selection transistor are shared in the unit pixel. Then, pixel signals of the respective pixels (photodiode PD1, photodiode PD2, photodiode PD3, and photodiode PD4) are transmitted via the same vertical signal line.

[0213] exist Fig. 10B In the case where the select transistor is "high (H)" and the reset transistor is "low (L)", if a voltage of -1.2 [V] is applied to the transmission gate TG, an overflow process is performed. Also, if a voltage of -0.5 [V] is applied to the transmission gate TG, a high dynamic range operation is performed.

[0214] Figure 11A-11B The layout of a solid-state image pickup device 100 according to a fourth embodiment of the present technology is shown. Figure 11A-11B is a plan view of the solid-state imaging device 100 .

[0215] exist Figure 11A-11B middle, Fig.11A Shown with Fig. 9 Same layout, Fig. 11B A layout in which the arrangement position of GND is changed is shown.

[0216] Fig.11A With Fig. 9 The same structure, so the description thereof will be omitted. Fig.11A and Fig. 11B The only difference between the two is the change in the arrangement of GND. Fig. 11B Description.

[0217] Figure 12A-12B 1 is a plan view showing the layout of a solid-state imaging device according to a fourth embodiment of the present technology. Figure 12A-12B middle, Fig. 12A The figure shows a layout in which a floating diffusion gate (FDG) is also provided. Fig. 12B A layout is shown in which the SEL transistor, the RST transistor, and the AMP transistor are allocated to the transistors TR1 to TR4.

[0218] like Fig. 12AAs shown, in the solid-state imaging device 100b, a floating diffusion section (FDG) transistor is provided so that when capturing an image of a high-brightness subject, all signal charges generated by the photodiode PD1, the photodiode PD2, the photodiode PD3, and the photodiode PD4 can be accumulated in the floating diffusion section FD. The floating diffusion section (FDG) transistor is a transistor (FDG transistor) for adding a capacitance Cfd to the floating diffusion section FD when capturing an image of a high-brightness subject. Fig. 12B In this case, the capacitor Cfd2 is connected in parallel via the connecting wiring.

[0219] Figure 13A-13B A pixel circuit that reads a pixel signal of a solid-state imaging device according to a fourth embodiment of the present technology is shown. Figure 13A-13B : is a circuit diagram showing a pixel circuit that reads a pixel signal of the solid-state imaging device of the fourth embodiment. Figure 13A-13B The circuit diagram corresponds to Figure 12A-12B Layout. Fig.13A In the embodiment, a floating diffusion part FDG is provided, and a capacitor Cfd2 is arranged in series with a capacitor Cfd. Fig. 13B In the embodiment, a floating diffusion part FDG is provided, and a capacitor Cfd2 is arranged in parallel with the capacitor Cfd. Fig. 10A The construction is the same as in , so its description will be omitted.

[0220] <6. Fifth Embodiment (Example 5 of Solid-State Image Pickup Device)>

[0221] A solid-state image pickup device according to a fifth embodiment of the present technology is a solid-state image pickup device in which the second pixel separation region has a cross shape in the solid-state image pickup device according to the first embodiment of the present technology.

[0222] In addition, the solid-state imaging device according to the fifth embodiment of the present technology may be a solid-state imaging device in which an overflow region is formed in an area where a first pixel separation region and a second pixel separation region having a cross shape are close to each other in the solid-state imaging device according to the first embodiment of the present technology.

[0223] In addition, the solid-state imaging device according to the fifth embodiment of the present technology may be a solid-state imaging device in which the proximity distance between the first pixel separation region and the second pixel separation region having a cross shape in the solid-state imaging device according to the first embodiment of the present technology is the same or different.

[0224] In this case, the solid-state image pickup device may be a solid-state image pickup device in which at least a part of the second pixel separation region having a cross shape is connected to the first pixel separation region.

[0225] Will refer to Figure 14A-Figure 14C A solid-state imaging device according to a fifth embodiment of the present technology is described. Figure 14A-Figure 14C 1 is a plan view showing an example of the arrangement of the first pixel separation region DTI1 and the second pixel separation region DTI2 in the solid-state imaging device 100. Unless otherwise specified, “upper” refers to Figure 14A-Figure 14C The upward direction in the Figure 14A-Figure 14C in the right direction.

[0226] exist Figure 14A-Figure 14C middle, Fig.14A FIG. 4 shows a solid-state imaging device in which the second pixel separation area DTI2 has a cross shape. Fig.14A In the solid-state imaging device shown, the width of the first pixel separation region DTI1 is width W1. On the other hand, the width of the second pixel separation region DTI2 is width W2. The second pixel separation region DTI2 is arranged at the center of the first pixel separation region DTI1 so that the second pixel separation region DTI2 is separated into sub-pixel 1L, sub-pixel 1R, sub-pixel 2L, and sub-pixel 2R.

[0227] The width W1 of the first pixel separation region DTI1 and the width W2 of the second pixel separation region DTI2 may be the same, or may be different. Note that preferably, the width W1 of the first pixel separation region DTI1 and the width W2 of the second pixel separation region DTI2 are the same as each other. If the width W1 of the first pixel separation region DTI1 and the width W2 of the second pixel separation region DTI2 are the same as each other, it is considered that the photoelectric conversion characteristics when performing photoelectric conversion are stable. In addition, at least a portion of the second pixel separation region DTI2 may be connected to the first pixel separation region DTI1.

[0228] Fig. 14B FIG. 4 shows a solid-state imaging device in which at least a portion of the second pixel separation region DTI2 is connected to the first pixel separation region DTI1. Fig. 14B In the embodiment, the second pixel separation area DTI2 having a cross shape is connected to the left and right side walls of the first pixel separation area DTI1. In this case, overflow is performed through an area (gap) in which the first pixel separation area DTI1 and the second pixel separation area DTI2 are not separated. Specifically, overflow is performed in the non-separated area (gap) in the sub-pixel 1L and the sub-pixel 1R and in the sub-pixel 2L and the sub-pixel 2R.

[0229] In addition, at the time of the auto focus operation, the auto focus operation can be performed by the phase difference signal obtained by the sub-pixel 1L and the sub-pixel 1R and the sub-pixel 2L and the sub-pixel 2R. In addition, the image signal may be composed of the sum of the signals of the sub-pixel 1L, the sub-pixel 1R, the sub-pixel 2L, and the sub-pixel 2R. In addition, the sum of the signals of the sub-pixel 1L and the sub-pixel 1R and the sum of the signals of the sub-pixel 2L and the sub-pixel 2R may be used as different image signals.

[0230] Fig. 14C FIG. 4 shows a solid-state imaging device in which at least a portion of the second pixel separation region DTI2 is connected to the first pixel separation region DTI1. Fig. 14C In the embodiment, the second pixel separation region DTI2 having a cross shape is connected to the upper side wall and the lower side wall of the first pixel separation region DTI1. In this case, overflow is performed through the region (gap) in which the first pixel separation region DTI1 and the second pixel separation region DTI2 are not separated. Specifically, overflow is performed in the non-separated region (gap) in the sub-pixel 1L and the sub-pixel 2L and in the sub-pixel 1R and the sub-pixel 2R.

[0231] In addition, at the time of the autofocus operation, the autofocus operation can be performed by the phase difference signal obtained by the sub-pixel 1L and the sub-pixel 2L, and the sub-pixel 1R and the sub-pixel 2R. In addition, the image signal can be composed of the sum of the signals of the sub-pixel 1L, the sub-pixel 2L, the sub-pixel 1R, and the sub-pixel 2R, and the sum of the signals of the sub-pixel 1L and the sub-pixel 2L and the sum of the signals of the sub-pixel 1R and the sub-pixel 2R can be used as different image signals.

[0232] Figure 15A-15B A modification example of the arrangement of the second pixel isolation region DTI2 is shown. Figure 15A-15B 1 and 2 show a plan view in which the interval between the first pixel separation region DTI1 and the second pixel separation region DTI2 is different. Figure 15A-15B The upward direction in the “right” indicates Figure 15A-15B in the right direction.

[0233] exist Fig.15A In the solid-state imaging device shown, in the second pixel isolation region DTI2 and the first pixel isolation region DTI1, the gap a that is not divided in the left-right direction is wider than the gap b that is not divided in the up-down direction. Specifically, the gap a formed between the sub-pixel 1L and the sub-pixel 1R is wider than the gap b formed between the sub-pixel 1L and the sub-pixel 2L.

[0234] On the other hand, Fig. 15BIn the solid-state imaging device shown, in the second pixel isolation region DTI2 and the first pixel isolation region DTI1, the gap a that is not divided in the up-down direction is wider than the gap b that is not divided in the left-right direction. Specifically, the gap a formed between the sub-pixel 1L and the sub-pixel 2L is wider than the gap b formed between the sub-pixel 1L and the sub-pixel 1R.

[0235] Next, we will refer to Figure 16A-16C The overflow area OF is described. Figure 16A-16C 2 is a plan view showing a location where the overflow region OF is formed. The overflow region OF may be provided in all gaps formed between the first pixel isolation region DTI1 and the second pixel isolation region DTI2 (for example, at four locations).

[0236] Fig.16A An example is shown in which the overflow regions OF (the overflow region OF1 , the overflow region OF2 , the overflow region OF3 , and the overflow region OF4 ) are formed in all gaps formed between the first pixel separation region DTI1 and the second pixel separation region DTI2 .

[0237] also, Fig. 16B An example is shown in which overflow regions OF (overflow region OF1 and overflow region OF3) are formed in the gap in the left-right direction among the gaps formed between the first pixel separation region DTI1 and the second pixel separation region DTI2. Specifically, the overflow region OF1 is formed in the gap between the sub-pixel 1L and the sub-pixel 1R, and the overflow region OF3 is formed in the gap between the sub-pixel 2L and the sub-pixel 2R.

[0238] also, Fig. 16C An example is shown in which overflow regions OF (overflow region OF2 and overflow region OF4) are formed in the gap in the up-down direction among the gaps formed between the first pixel separation region DTI1 and the second pixel separation region DTI2. Specifically, the overflow region OF4 is formed in the gap between the sub-pixel 1L and the sub-pixel 2L, and the overflow region OF2 is formed in the gap between the sub-pixel 1R and the sub-pixel 2R.

[0239] Next, we will refer to Figure 17A-17C The concentration of the overflow region OF is described. Figure 17A-17C It is a plan view showing a portion where the overflow region OF is formed.

[0240] Fig.17A An example is shown in which the overflow regions OF (the overflow region OF1 , the overflow region OF2 , the overflow region OF3 , and the overflow region OF4 ) are formed in all gaps formed between the first pixel isolation region DTI1 and the second pixel isolation region DTI2 .

[0241] Fig.17A It shows the case where the overflow region OF1 and the overflow region OF3 have a lower impurity concentration in the P-type region than the overflow region OF2 and the overflow region OF4, the case where the overflow region OF1 and the overflow region OF3 are N-type regions, or the case where the overflow region OF1 and the overflow region OF3 have a higher impurity concentration in the N-type region than the overflow region OF2 and the overflow region OF4.

[0242] exist Fig. 17B In the embodiment, the overflow region OF1 and the overflow region OF3 are formed in the gap between the first pixel isolation region DTI1 and the second pixel isolation region DTI2. In this case, a difference in impurity concentration of the P-type region may be provided in the overflow region OF1 and the overflow region OF3.

[0243] exist Fig. 17C In the embodiment, the overflow region OF2 and the overflow region OF4 are formed in the gap between the first pixel isolation region DTI1 and the second pixel isolation region DTI2. In this case, a difference in impurity concentration of the P-type region may be provided in the overflow region OF2 and the overflow region OF4.

[0244] Next, a case where the unit pixels of the first pixel isolation region DTI1 and the second pixel isolation region DTI2 are arranged in an array will be described.

[0245] Fig.18 It will be Fig.14A The arrangement example of the first pixel isolation region DTI1 and the second pixel isolation region DTI2 shown is a plan view in which they are arranged in an array shape. Fig.19 It shows that Fig.18 The example of arranging color filters by array-like arrangement of unit pixels is shown.

[0246] Each of the 16 solid-state imaging devices is provided with one of the color filters CF1, CF2, CF3, and CF4. The color filter CF1 is a green color filter, the color filter CF2 is a red color filter, the color filter CF3 is a blue color filter, and the color filter CF4 is a green color filter.

[0247] Fig. 20 It will be Fig. 14B The arrangement example of the first pixel isolation region DTI1 and the second pixel isolation region DTI2 shown is a plan view in which they are arranged in an array shape. Fig.21 It shows that Fig. 20 The illustrated plan view is an example of an array-like arrangement of unit pixels to arrange color filters.

[0248] Each of the 16 solid-state imaging devices is provided with one of the color filters CF1, CF2, CF3, and CF4. The color filter CF1 is a green color filter, the color filter CF2 is a red color filter, the color filter CF3 is a blue color filter, and the color filter CF4 is a green color filter.

[0249] Fig. 22 It will be Fig. 14C The arrangement example of the first pixel isolation region DTI1 and the second pixel isolation region DTI2 shown is a plan view in which they are arranged in an array shape. Fig.23 It shows that Fig. 22 The example of arranging color filters by array-like arrangement of unit pixels is shown.

[0250] Each of the 16 solid-state imaging devices is provided with one of the color filters CF1, CF2, CF3, and CF4. The color filter CF1 is a green color filter, the color filter CF2 is a red color filter, the color filter CF3 is a blue color filter, and the color filter CF4 is a green color filter.

[0251] Fig.24 It shows Fig. 14B The example arrangement shown and Fig. 14C The arrangement example shown is a plan view of the devices arranged alternately in an array. Fig.25 It shows that Fig.24 The illustrated plan view is an example of an array-like arrangement of unit pixels to arrange color filters.

[0252] Each of the 16 solid-state imaging devices is provided with one of the color filters CF1, CF2, CF3, and CF4. The color filter CF1 is a green color filter, the color filter CF2 is a red color filter, the color filter CF3 is a blue color filter, and the color filter CF4 is a green color filter.

[0253] Fig.26 It shows Fig. 14B The example arrangement shown and Fig. 14C The arrangement examples shown are alternately arranged in an array and arranged in a plan view aligned in the longitudinal direction in the same shape. Fig. 27 It shows that Fig.26 The illustrated plan view is an example of an array-like arrangement of unit pixels to arrange color filters.

[0254] Each of the 16 solid-state imaging devices is provided with one of the color filters CF1, CF2, CF3, and CF4. The color filter CF1 is a green color filter, the color filter CF2 is a red color filter, the color filter CF3 is a blue color filter, and the color filter CF4 is a green color filter.

[0255] Fig.28 It shows that Fig. 14B The example arrangement shown is arranged in a row horizontally. Fig. 14C The arrangement example shown in FIG. 14B is arranged in a row in the horizontal direction, thereby combining the arrangement example shown in FIG. 14B and Fig. 14C The arrangement example shown is a plan view of the devices arranged alternately in an array. Fig.29 It shows that Fig.28 The illustrated plan view is an example of an array-like arrangement of unit pixels to arrange color filters.

[0256] Each of the 16 solid-state imaging devices is provided with one of the color filters CF1, CF2, CF3, and CF4. The color filter CF1 is a green color filter, the color filter CF2 is a red color filter, the color filter CF3 is a blue color filter, and the color filter CF4 is a green color filter.

[0257] <7. Sixth Embodiment (Example 6 of Solid-State Image Pickup Device)>

[0258] A solid-state imaging device according to a sixth embodiment of the present technology is a solid-state imaging device further including a power supply that supplies voltages of three or more values ​​to the transfer gate TG in the solid-state imaging device according to the fourth embodiment of the present technology.

[0259] Furthermore, the solid-state imaging device according to the sixth embodiment of the present technology is a solid-state imaging device further including a booster circuit which raises and lowers the voltage supplied to the transfer gate TG in the solid-state imaging device according to the fourth embodiment of the present technology.

[0260] Fig.30 There is shown a configuration in which the solid-state image pickup device according to the sixth embodiment of the present technology further includes a power supply that supplies voltages of three or more values ​​to the transfer gate TG. Fig.30 is a block diagram showing a configuration example of a solid-state image pickup device 1 according to the sixth embodiment.

[0261] like Fig.30As shown, the solid-state imaging device 1 is configured as, for example, a CMOS image sensor. The solid-state imaging device 1 includes a pixel region (pixel array) 2 and a peripheral circuit unit on a semiconductor substrate (for example, a silicon substrate) not shown, in which a plurality of pixels 1a are regularly arranged in a two-dimensional array.

[0262] The pixel 1a has a photoelectric conversion unit (e.g., a photodiode) and a plurality of pixel transistors (MOS transistors). The plurality of pixel transistors include three transistors, e.g., a transfer transistor, a reset transistor, and an amplifier transistor. In addition, the plurality of pixel transistors may include four transistors by adding a selection transistor. Note that since the equivalent circuit of the unit pixel is the same as the well-known technology, its detailed description will be omitted.

[0263] In addition, the pixel 1a can be configured as a unit pixel, or can have a shared pixel structure. The shared pixel structure is a structure in which a plurality of photodiodes share other transistors with each other except for a floating diffusion and a plurality of transfer transistors. That is, in a shared pixel, the photodiodes and transfer transistors constituting the plurality of unit pixels are configured to share one other pixel transistor.

[0264] The peripheral circuit unit includes a level shifter 3 , a register logic 4 , an analog-to-digital (AD) converter 5 , an output circuit 6 , a power supply 7 , a power supply 8 , and a power supply 9 .

[0265] The level shifter 3 is connected to the power supply 7, the power supply 8, and the power supply 9, and determines the voltage applied to the plurality of pixels 1a arranged in the pixel array 2. The voltage applied to the transmission gate TG by the level shifter 3 is "High potential" during signal readout, "Low potential 1" during signal accumulation during autofocus operation, and "Low potential 2" without overflow during high dynamic range operation. In order to apply the three voltages of "High potential", "Low potential 1", and "Low potential 2", the level shifter 3 has a level shift circuit that changes the voltage from "High potential" to "Low potential 1", a level shift circuit that changes the voltage from "Low potential 1" to "Low potential 2", and a level shift circuit that changes the voltage from "High potential" to "Low potential 2". In addition, in each of the three level shift circuits constituting the level shifter 3, two power supplies are connected.

[0266] The register logic 4 is composed of, for example, a shift register. The register logic 4 selects a pixel drive wiring, and supplies a pulse for driving a pixel to the selected pixel drive wiring to drive the pixel in a row unit. That is, the register logic 4 selectively scans each pixel 1a of the pixel array 2 in the vertical direction in a row unit. Then, the register logic 4 supplies a pixel signal based on a signal charge generated in a photoelectric conversion unit of each pixel 1a corresponding to the amount of received light to an AD (Analog to Digital) converter 5.

[0267] For example, the AD converter 5 is arranged for each column of the pixel 1a. For the signal output from the pixel 1a of one row, the AD converter 5 performs signal processing such as noise removal for each pixel column. Specifically, the AD converter 5 performs signal processing such as CDS (Correlated Double Sampling) for removing fixed pattern noise peculiar to the pixel 1a; signal amplification; and AD (Analog / Digital) conversion, etc.

[0268] The output circuit 6 processes the signals sequentially supplied from the AD converter 5 through the horizontal signal line and outputs the processed signals. For example, the output circuit 6 may perform only buffering, or may perform black level adjustment, column difference correction, various digital signal processing, and the like.

[0269] The power source 7 , the power source 8 , and the power source 9 supply the level shifter 3 with any one of the three voltages of “high potential”, “low potential 1 ”, and “low potential 2 ” that does not overlap.

[0270] Figure 31A-Figure 31B 1 is a block diagram showing a configuration in which a plurality of pixels 1 a of a solid-state image pickup device according to a sixth embodiment of the present technology are arranged in a two-dimensional array and are supplied with electric power. Figure 31A-Figure 31B is a block diagram of a solid-state imaging device according to the sixth embodiment to which three voltages are supplied. Fig.31A In the solid-state imaging device 1, a plurality of pixels 1a are arranged in a two-dimensional array, and Fig.31A The basic structure of the solid-state imaging device 1 is Fig.30 The basic configuration of the solid-state imaging device 1 is the same as that of the solid-state imaging device 1. Therefore, detailed description will be omitted. Fig.31B In the example, it is assumed that power supply 7 supplies -1.2 [V], power supply 8 supplies -0.5 [V], and power supply 9 supplies 2.8 [V].

[0271] Fig.32 A block diagram is shown in which a part of a power supply circuit of a solid-state imaging device according to a sixth embodiment of the present technology is configured by a booster circuit. Fig.32: is a block diagram in which a part of the power supply circuit of the solid-state imaging device according to the sixth embodiment of the present technology is configured by a booster circuit.

[0272] like Fig.32 As shown, in pixel 1a, power supply 7 is composed of booster circuit 7a, and power supply 8 is composed of booster circuit 8a. Fig.31A The configuration of the solid-state imaging device 1 is the same as that of the solid-state imaging device 1, and thus a description thereof will be omitted.

[0273] The booster circuit 7a and the booster circuit 8a are booster circuits composed of a charge pump circuit etc. provided in the pixel 1a. In this case, the booster circuit 7a applies -1.2 [V], and the booster circuit 8a applies -0.5 [V].

[0274] Fig.33 A block diagram is shown in which a part of a power supply circuit of a solid-state image pickup device 1 b according to a sixth embodiment of the present technology is configured by a booster circuit. Fig.33 1 is a block diagram in which a part of the power supply circuit of the solid-state image pickup device 1 b according to the sixth embodiment of the present technology is configured by a booster circuit.

[0275] like Fig.33 As shown, in the solid-state imaging device 1b, the power supply 7 is composed of a booster circuit 7a, and the power supply 9 is composed of a booster circuit 9a. Fig.31A The configuration of the solid-state imaging device 1 is the same as that of the solid-state imaging device 1, and thus a description thereof will be omitted.

[0276] The booster circuit 7a and the booster circuit 9a are booster circuits composed of a charge pump circuit etc. provided in the pixel 1a. In this case, the booster circuit 7a applies -1.2 [V], and the booster circuit 9a applies 2.8 [V].

[0277] As described above, the solid-state imaging device according to the sixth embodiment of the present technology supplies three voltages to the transfer gate TG through the power supply circuit or the booster circuit.

[0278] Fig.34 The configuration of the pixel array 2 of the solid-state image pickup device according to the sixth embodiment of the present technology is shown. Fig.34 : is a block diagram showing the configuration of a pixel array 2 of a solid-state image pickup device according to a sixth embodiment of the present technology.

[0279] like Fig.34 As shown, a plurality of pixels 1a are represented as i rows×n columns in the pixel array 2. Therefore, three voltages can be applied to the transfer gates TG of the plurality of pixels 1a constituted by i rows×n columns.

[0280] <8. Seventh Embodiment (Example 7 of Solid-State Image Pickup Device)>

[0281] First, a case where a high dynamic range operation and an auto focus operation are performed using one solid-state image pickup device will be described.

[0282] In a conventional dual-pixel type pixel, in the case where an auto focus (AF) operation is performed in all pixels, a color filter of the same color and a microlens are provided on a photodiode (one pixel) including two divided photodiodes. In such a dual-pixel type pixel, each of the divided photodiodes receives light that has passed through a portion of the imaging optical system.

[0283] In the case of performing an autofocus operation, the solid-state imaging device detects the image shift of each divided photodiode to measure the distance to the subject, and brings the image into focus by performing signal processing using the distance measurement information. At this time, one of the parameters that determines the detection accuracy of the image shift amount of each divided photodiode is the signal separation ratio representing the signal difference between the divided sub-pixels when not in focus.

[0284] At the same time, in a solid-state imaging device having the same structure, high dynamic range (HDR) operation can be performed, that is, control with different exposure times between sub-pixels, synthesizing signals with different exposure times through signal processing to construct an image in a wide exposure area, and expanding the dynamic range.

[0285] In a dual-pixel type pixel, when both the auto focus (AF) operation and the HDR operation are performed in all pixels, there is the following problem.

[0286] That is, when detecting the image shift amount in order to obtain an autofocus (AF) signal, a common focusing device needs to be provided for each sub-pixel. When such a focusing device is used, the incident light passing through the microlens is focused in the pixel separation area formed at the boundary portion of the sub-pixel. Therefore, the crosstalk between the sub-pixels becomes very significant, so that the detection accuracy of the image shift information tends to decrease. In a solid-state imaging device whose pixel size is miniaturized, the sub-pixel size is also reduced at the same time, so that crosstalk between the sub-pixels is more likely to occur, and the detection accuracy of the image shift information is more likely to decrease.

[0287] In addition, in the above-mentioned dual-pixel type pixel, if crosstalk occurs between sub-pixels with different exposure times when acquiring HDR signals, different signals are incident between sub-pixels that should have been incident with the same image signal. In this case, sensitivity differences occur between sub-pixels, resulting in signal nonlinearity during HDR signal synthesis caused by crosstalk or fixed pattern noise caused by sensitivity differences, thereby causing problems of image quality degradation. In order to suppress such image quality degradation, when performing HDR operation, it is necessary to ensure that light is not irradiated on the pixel separation area formed at the boundary portion of each sub-pixel, so that crosstalk between sub-pixels can be sufficiently reduced.

[0288] Therefore, in a dual pixel type pixel, there are optically conflicting requirements for achieving both autofocus operation and HDR operation.

[0289] The solid-state image pickup device according to the seventh embodiment of the present technology sufficiently reduces crosstalk between sub-pixels, and achieves both the autofocus operation and the HDR operation in a dual-pixel type pixel.

[0290] According to the seventh embodiment of the present technology, the solid-state imaging device is a solid-state imaging device comprising: a first pixel separation region, which separates a plurality of unit pixels each including two or more sub-pixels; a second pixel separation region, which separates each of the plurality of unit pixels separated by the first pixel separation region; a first light-gathering portion covering the entire unit pixel; and a plurality of second light-gathering portions respectively covering each of the sub-pixels.

[0291] According to the solid-state image pickup device of the seventh embodiment of the present technology, it is possible to achieve both a high dynamic range operation and an autofocus operation with high accuracy in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels.

[0292] In the following, reference will be made to Figure 35 to Figure 37 A solid-state imaging device 1001 as an example of a solid-state imaging device according to a seventh embodiment of the present technology is described in detail.

[0293] Fig.35 There is shown a layout of a solid-state imaging device 1001 which is an example of a solid-state imaging device according to a seventh embodiment of the present technology. Fig.35 1 is a plan view of a solid-state imaging device 1001 including four pixels. Fig.36 There is shown a layout of a solid-state imaging device 100 which is an example of a solid-state imaging device according to a seventh embodiment of the present technology. Fig.36 1 is a plan view of the solid-state imaging device 100 constituting one pixel. Unless otherwise specified, "upper" refers to the upper direction in each figure, and "lower" refers to the lower direction in each figure.

[0294] The solid-state imaging device 1001 includes four solid-state imaging devices 100 (2×2) Fig.35 The solid-state imaging device 101 to the solid-state imaging device 104 in FIG.

[0295] The solid-state imaging device 100 is provided with a color filter CF. Specifically, the solid-state imaging device 101 is provided with a color filter CF1. The solid-state imaging device 102 is provided with a color filter CF2. The solid-state imaging device 103 is provided with a color filter CF3. The solid-state imaging device 104 is provided with a color filter CF4. As a plan view of the layout of the solid-state imaging device 100, Fig.36 A plan view showing the layout of the solid-state imaging device 101 .

[0296] like Fig.35 and Fig.36 As shown, the solid-state imaging device 1001 includes: a first pixel separation region DTI1, which separates a plurality of unit pixels each including two or more sub-pixels SP (first sub-pixel SP1 to fourth sub-pixel SP4); and a second pixel separation region DTI2, which separates each of the plurality of unit pixels separated by the first pixel separation region DTI1. In addition, the solid-state imaging device 1001 includes: a microlens LS1 (first lens), which is a first light-collecting portion covering the entire unit pixel; and second lenses LS2A to LS2D, which are a plurality of second light-collecting portions covering each of the sub-pixels of the solid-state imaging device 100.

[0297] The solid-state imaging device 1001 is different from the solid-state imaging device 1000 in that the solid-state imaging device 1001 includes a micro lens LS1 as a first light focusing portion and second lenses LS2A to LS2D as a second light focusing portion. In addition, the solid-state imaging device 1001 is different from the solid-state imaging device 1000 in that the overflow region OF (overflow region OF1 to overflow region OF4) is not necessary.

[0298] Note that Fig.35 The solid-state imaging device 1001 and Fig.36 In the solid-state imaging device 100 , all parts except the first pixel isolation region DTI1 and the second pixel isolation region DTI2 and the first to fourth sub-pixels SP1 to SP4 are omitted.

[0299] Fig.37 A configuration of a cross section of a solid-state imaging device 1001 according to a seventh embodiment to which the present technology is applied is shown. Fig.37 It is shown Fig.351 is a cross-sectional view of a configuration example of the EE' section of the solid-state imaging device 1001 (solid-state imaging devices 101 and 102) shown in FIG. Note that, unless otherwise specified, "upper" refers to the upper side. Fig.37 The up direction in the sentence, “down” refers to Fig.37 The downward direction in .

[0300] like Fig.37 As shown, microlenses LS1 are respectively provided above (light incident side) solid-state imaging devices 101 and 102. Microlenses LS1 are respectively arranged on each of color filters CF1 and CF2, and are provided to cover the entirety of first to fourth subpixels SP1 to SP4 of solid-state imaging device 101.

[0301] Similarly, microlenses LS1 are also provided above each of the solid-state imaging devices 103 and 104. That is, microlenses LS1 are provided on each of the color filters CF3 and CF4, and are provided to cover the entirety of the first to fourth subpixels SP1 to SP4 of the solid-state imaging device 101.

[0302] The microlenses LS1 provided on each of the solid-state image pickup devices 101 to 104 may be formed individually with each other, or may be a microlens array formed integrally.

[0303] The microlens LS1 includes a material having a refractive index lower than that of the second lenses LS2A to LS2D. As a material constituting the microlens LS1, for example, a material having a refractive index of 1.5 or more and 1.6 or less is preferable. As such a material, an organic material such as an acrylic resin material can be used.

[0304] like Fig.37 As shown, the second lenses LS2A to LS2D are provided between the microlens LS1 and the solid-state imaging device 101. More specifically, the second lenses LS2A to LS2D are provided between the microlens LS1 and the color filter CF1 provided on the solid-state imaging device 101.

[0305] like Fig.35 and Fig.36 As shown, the second lens LS2A is disposed to cover the first sub-pixels SP1 of the solid-state imaging devices 101 to 104. Similarly, the second lenses LS2B to LS2D are disposed to cover the second to fourth sub-pixels SP2 to SP4 of the solid-state imaging devices 101 to 104, respectively.

[0306] The second lenses LS2A to LS2D disposed on each of the first to fourth sub-pixels SP1 to SP4 may be formed individually with each other, or may be a lens array formed integrally.

[0307] The second lenses LS2A to LS2D include a material having a higher refractive index than the microlens LS1. As the material constituting the second lenses LS2A to LS2D, for example, a material having a refractive index greater than 1.6 is preferred. As such a material, an inorganic material such as silicon nitride or a metal oxide such as aluminum oxide, tantalum oxide, and titanium oxide can be used.

[0308] The second light collecting section may include a low refractive index layer LL provided between the second lenses LS2A to LS2D and the solid-state image pickup devices 101 to 104 in addition to the second lenses LS2A to LS2D.

[0309] The low refractive index layer LL includes a material having a lower refractive index than the microlens LS1 and the second lenses LS2A to LS2D. As a material constituting the low refractive index layer LL, for example, a material having a refractive index of 1.2 or more and 1.3 or less is preferable, and a metal oxide or the like can be used.

[0310] As described above, the solid-state imaging device 1001 of the seventh embodiment to which the present technology is applied includes: a microlens LS1 that covers each unit pixel (solid-state imaging devices 101 to 104) as a whole; and a plurality of second lenses LS2A to LS2D that respectively cover each of the first sub-pixel SP1 to the fourth sub-pixel SP4.

[0311] In the solid-state imaging device 1001, in an AF operation of obtaining an auto focus (AF) signal, light collected by the microlens LS1 as a common light collecting device is incident on each sub-pixel, so that different image information with image shift between sub-pixels can be obtained. In addition, in the solid-state imaging device 1001, light can be prevented from being collected in the second pixel separation area DTI2 arranged between the first sub-pixel SP1 to the fourth sub-pixel SP4 by the second lenses LS2A to LS2D.

[0312] In the solid-state imaging device 1001, even if the pixels are miniaturized, crosstalk caused by light irradiating the second pixel separation area DTI2 is reduced. In the solid-state imaging device 1001, in the AF operation, a phase difference signal with a high separation ratio can be obtained, so that the detection sensitivity of the image shift can be improved, and in the HDR operation, by suppressing the resolution reduction caused by the signal nonlinearity or fixed pattern noise after the HDR signal synthesis, it is possible to obtain a high-quality playback image.

[0313] According to the solid-state imaging device 1001 of the seventh embodiment of the present technology, both high dynamic range operation and autofocus operation can be achieved in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels SP (first to fourth sub-pixels SP1 to SP4 ).

[0314] Note that the case where the solid-state imaging device 1001 includes the solid-state imaging device 100 (101 to 104) similar to the first embodiment has been described in the seventh embodiment, but the present technology is not limited thereto. That is, the solid-state imaging device 1001 may include the solid-state imaging device 101 according to the second embodiment (see Figure 6 ), the solid-state imaging device 102 according to the third embodiment (see Figure 7 ), or the solid-state imaging device 100 according to the fourth to sixth embodiments, instead of the above-described solid-state imaging device 100.

[0315] <9. Eighth Embodiment (Example 8 of Solid-State Image Pickup Device)>

[0316] According to the eighth embodiment of the present technology, a solid-state imaging device includes: a first pixel separation region, which separates a plurality of unit pixels each including two or more sub-pixels; a second pixel separation region, which separates each of the plurality of unit pixels separated by the first pixel separation region; a first light-gathering portion covering the entire unit pixel; a plurality of second light-gathering portions respectively covering each of the sub-pixels; a color filter respectively covering the unit pixels; and a light-shielding layer, which is arranged to surround the color filter in a plan view.

[0317] According to the solid-state image pickup device of the eighth embodiment of the present technology, it is possible to achieve both a high dynamic range operation and an autofocus operation with higher accuracy in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels.

[0318] In the following, reference will be made to Figures 38 to 41 A solid-state imaging device 1002 as an example of a solid-state imaging device according to an eighth embodiment of the present technology is described in detail.

[0319] Fig.38 There is shown a layout of a solid-state imaging device 1002 which is an example of a solid-state imaging device according to an eighth embodiment of the present technology. Fig.38 is a plan view of a solid-state imaging device 1002 including four pixels. Fig.38 In the solid-state imaging device 1002, all parts except the first pixel isolation region DTI1 and the second pixel isolation region DTI2 and the first to fourth sub-pixels SP1 to SP4 are omitted.

[0320] The solid-state imaging device 1002 is different from the solid-state imaging device 1001 according to the seventh embodiment in that the solid-state imaging device 1002 includes a light shielding layer BL1 provided above the first pixel separation region DTI1. In the following description, description of parts other than the light shielding layer BL1 will be omitted.

[0321] Fig.39A configuration of a cross section of a solid-state imaging device 1002 according to an eighth embodiment to which the present technology is applied is shown. Fig.39 It is shown Fig.38 1 is a cross-sectional view of a configuration example of a FF′ cross section of the solid-state imaging device 1002 (solid-state imaging devices 101 and 102) shown in FIG. Note that, unless otherwise specified, “upper” refers to the upper side. Fig.39 The up direction in the sentence, “down” refers to Fig.39 The downward direction in .

[0322] like Fig.38 and Fig.39 As shown, the light shielding layer BL1 is provided above the first pixel separation region DTI1 and is provided to respectively surround the color filters CF1 to CF4 provided on the solid-state imaging device 100 in a plan view.

[0323] The light shielding layer BL1 only needs to be provided to distinguish color filters of different colors. That is, when color filters of the same color are provided on adjacent solid-state imaging devices 100 , the light shielding layer BL1 is not necessarily provided above the first pixel isolation region DTI1 .

[0324] The light shielding layer BL1 may be made of any material capable of shielding light incident through the microlens LS1 , and may be a metal layer formed of a metal such as tungsten (W) or titanium (Ti), for example.

[0325] As described above, the solid-state imaging device 1002 of the eighth embodiment to which the present technology is applied includes a light shielding layer BL1 which is arranged to respectively surround the color filters CF1 to CF4 provided on the solid-state imaging device 100 in a plan view. In addition, the solid-state imaging device 1002 includes: a microlens LS1 which covers the entirety of each of the solid-state imaging devices 100 (101 to 104) as a unit pixel; and a plurality of second lenses LS2A to LS2D which respectively cover each of the first sub-pixel SP1 to the fourth sub-pixel SP4.

[0326] To this end, according to the solid-state imaging device 1002 of the eighth embodiment of the present technology, both high dynamic range operation and autofocus operation can be achieved in a pixel structure in which multiple unit pixels each include two or more sub-pixels SP (first sub-pixel SP1 to fourth sub-pixel SP4).

[0327] In addition, according to the solid-state imaging device 1002 of the eighth embodiment of the present technology, light incident on the color filters CF1 to CF4 can be prevented from being incident on other adjacent color filters by the light shielding layer BL1. In addition, in the solid-state imaging device 1002, light collected by the microlens LS1 provided for each unit pixel can be prevented from being irradiated to the light shielding layer BL1. Therefore, in the solid-state imaging device 1002 according to the eighth embodiment of the present technology, crosstalk can be reduced, thereby preventing a decrease in sensitivity in each solid-state imaging device 100 and preventing an increase in optical color mixing.

[0328] <Modification>

[0329] (1) First Modification

[0330] Fig.40 An example of a cross-sectional view of a solid-state imaging device 1002A which is a first modification example of the solid-state imaging device 1002 to which the eighth embodiment of the present technology is applied is shown.

[0331] The solid-state imaging device 1002A includes: a first pixel separation region DTI1 that separates a plurality of unit pixels each including two or more sub-pixels SP (first sub-pixel SP1 to fourth sub-pixel SP4); and a second pixel separation region DTI2 that separates each of the plurality of unit pixels separated by the first pixel separation region DTI1. In addition, the solid-state imaging device 1002A is a solid-state imaging device that includes: a microlens LS1 that is a first light-collecting portion that covers the entire unit pixel; second lenses LS2A to LS2D that are a plurality of second light-collecting portions that cover each of the sub-pixels of the solid-state imaging device 100; an intermediate lens layer LS3 that is provided between the microlens LS1 and the second lenses LS2A to LS2D; and a light-shielding layer BL1 that is provided to surround the color filter in a plan view.

[0332] The solid-state imaging device 1002A is different from the solid-state imaging device 1002 in that the solid-state imaging device 1002A includes an intermediate lens layer LS3 .

[0333] Hereinafter, the intermediate lens layer LS3 will be described.

[0334] The intermediate lens layer LS3 includes a material having a higher refractive index than the microlens LS1 and having a lower refractive index than the second lenses LS2A to LS2D. Examples of the material constituting the intermediate lens layer LS3 include metal oxides.

[0335] When the microlens LS1 includes an organic material (refractive index greater than or equal to 1.5 and less than or equal to 1.6) and the second lenses LS2A to LS2D include titanium oxide (refractive index approximately 2.5), the intermediate lens layer LS3 includes, for example, aluminum oxide (refractive index approximately 1.7) or tantalum oxide (refractive index approximately 2.1).

[0336] Note that the intermediate lens layer LS3 is not limited to having a single-layer structure, but may have a multi-layer structure. In the case where the intermediate lens layer LS3 has a multi-layer structure, the materials of each layer are selected so that their refractive index gradually increases as they approach the second lens LS2A to LS2D from the microlens LS1.

[0337] As described above, in the solid-state imaging device 1002A according to the first modification, by providing the intermediate lens layers LS3A to LS3D, the refractive index difference between the microlens LS1 and the intermediate lens layers LS3A to LS3D and the refractive index difference between the intermediate lens layers LS3A to LS3D and the second lenses LS2A to LS2D can be reduced. Therefore, light incident from the microlens LS1 is hardly reflected at the boundaries of the lenses, so that the amount of light incident on the first sub-pixel SP1 to the fourth sub-pixel SP4 is hardly reduced, and thus a decrease in sensitivity can be prevented.

[0338] (2) Second Modification

[0339] Fig.41 An example of a cross-sectional view of a solid-state imaging device 1002B which is a second modification of the solid-state imaging device 1002 to which the eighth embodiment of the present technology is applied is shown.

[0340] The solid-state imaging device 1002B includes: a first pixel separation region DTI1 that separates a plurality of unit pixels each including two or more sub-pixels SP (first sub-pixel SP1 to fourth sub-pixel SP4); and a second pixel separation region DTI2 that separates each of the plurality of unit pixels separated by the first pixel separation region DTI1. In addition, the solid-state imaging device 1002B is a solid-state imaging device that includes: a microlens LS1 that is a first light-collecting portion that covers the entire unit pixel; second lenses LS2A to LS2D that are a plurality of second light-collecting portions that cover each of the sub-pixels of the solid-state imaging device 100; intermediate lens layers LS3A to LS3D that are provided between the microlens LS1 and the second lenses LS2A to LS2D; a light-transmitting layer TL1 that is provided on the surface of the second lenses LS2A to LS2D that is opposite to the intermediate lens layers LS3A to LS3D; and a light-shielding layer BL1 that is provided to surround the color filter in a plan view.

[0341] The solid-state imaging device 1002B is different from the solid-state imaging device 1002 according to the eighth embodiment in that the solid-state imaging device 1002B includes intermediate lens layers LS3A to LS3D and a light-transmitting layer TL1. Since the intermediate lens layers LS3A to LS3D have the same configuration as those of the solid-state imaging device 1002A according to the first modification, description thereof will be omitted.

[0342] Hereinafter, the light-transmitting layer TL1 will be described.

[0343] The light-transmitting layer TL1 includes a material having a higher refractive index than the microlens LS1 and having a lower refractive index than the second lenses LS2A to LS2D. The light-transmitting layer TL1 may include the same material as the intermediate lens layers LS3A to LS3D, or may include other materials having the same refractive index as the intermediate lens layers LS3A to LS3D. Examples of the material constituting the light-transmitting layer TL1 may include metal oxides.

[0344] Note that the light-transmitting layer TL1 is not limited to having a single-layer structure, but may have a multi-layer structure. In the case where the light-transmitting layer TL1 has a multi-layer structure, the materials of the layers are selected so that their refractive index gradually decreases as they approach the low refractive index layer LL (color filters CF1 to CF4 when the low refractive index layer LL is not provided) from the second lenses LS2A to LS2D.

[0345] Furthermore, the light-transmitting layer TL1 may be provided in place of the low-refractive index layer LL of the solid-state image pickup device 1002, or the light-transmitting layer TL1 may be provided together with the low-refractive index layer LL. In the case where the light-transmitting layer TL1 is provided together with the low-refractive index layer LL, the light-transmitting layer TL1 is provided between the second lenses LS2A to LS2D and the low-refractive index layer LL, and its material is selected so that the refractive index gradually decreases as approaching the low-refractive index layer LL from the second lenses LS2A to LS2D.

[0346] As described above, in the solid-state imaging device 1002B of the second modification, by providing the light-transmitting layer TL1, the refractive index difference between the second lenses LS2A to LS2D and the light-transmitting layer TL1 and the refractive index difference between the light-transmitting layer TL1 and the first to fourth sub-pixels SP1 to SP4 can be reduced. Therefore, light incident from the microlens LS1 is hardly reflected at the boundaries of the lenses, so that the amount of light incident on the first to fourth sub-pixels SP1 to SP4 is hardly reduced, and thus a decrease in sensitivity can be prevented.

[0347] <10. Ninth Embodiment (Example 9 of Solid-State Image Pickup Device)>

[0348] A solid-state imaging device according to a ninth embodiment of the present technology includes: a first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; a first light-gathering portion that covers the entire unit pixel; and a plurality of second light-gathering portions that cover each of the sub-pixels. In the solid-state imaging device according to the ninth embodiment, the second light-gathering portion includes: a light-shielding layer that is disposed above the first pixel separation region and above the second pixel separation region; and a light-transmitting layer that is located above the sub-pixel and is disposed in a region surrounded by the light-shielding layer, and the light-transmitting layer includes a material having a higher refractive index than that of the light-shielding layer.

[0349] According to the solid-state image pickup device of the ninth embodiment of the present technology, it is possible to achieve both a high dynamic range operation and an autofocus operation with higher accuracy in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels.

[0350] In the following, reference will be made to Figure 42 to Figure 46 A solid-state imaging device 1003 as an example of a solid-state imaging device according to a ninth embodiment of the present technology is described in detail.

[0351] Fig.42 The layout of a solid-state imaging device 1003 which is an example of a solid-state imaging device according to a ninth embodiment of the present technology is shown. Fig.42 is a plan view of a solid-state imaging device 1003 including four pixels. Fig.42 In the solid-state imaging device 1003, detailed structures of the first to fourth sub-pixels SP1 to SP4 are omitted.

[0352] The solid-state image pickup device 1003 is different from the solid-state image pickup device 1001 according to the seventh embodiment in that the second light collecting section has a different configuration from the second lenses LS2A to LS2D. In the following description, description of each part other than the second light collecting section will be omitted.

[0353] Fig.43 A planar configuration of a second light collecting portion in a case where the microlens LS1 and the color filter CF1 are not shown in a plan view of the solid-state imaging device 100 provided in the solid-state imaging device 1003 according to the ninth embodiment to which the present technology is applied is shown.

[0354] Fig.44 A configuration of a cross section of a solid-state imaging device 1003 according to a ninth embodiment to which the present technology is applied is shown. Fig.44 It is shown Fig.421003 (solid-state imaging devices 101 and 102) is a cross-sectional view of a configuration example of a GG' cross section. Note that unless otherwise specified, "upper" refers to Fig.44 The up direction in the sentence, “down” refers to Fig.44 The downward direction in .

[0355] like Fig.43 and Fig.44 As shown, the second light-gathering portion includes a light-shielding layer BL2 disposed at least above the first pixel separation region DTI1 and above the second pixel separation region DTI2. In addition, the second light-gathering portion includes a light-transmitting layer TL2 (TL2A to TL2D), which is located above the first sub-pixel SP1 to the fourth sub-pixel SP4 and is disposed in an area surrounded by the light-shielding layer BL2.

[0356] like Fig.44 As shown, preferably, the cross-sectional shape of the light shielding layer BL2 (the cross-sectional shape in the direction orthogonal to the extending direction of the light shielding layer BL2 ( Fig.44 The cross-sectional shape shown in FIG. 1 is a shape whose width gradually decreases as it approaches the microlens LS1. For example, the cross-sectional shape of the light shielding layer BL2 is preferably a cone or a triangle. Therefore, the cross-sectional shapes of the light-transmitting layers TL2A to TL2D serving as waveguides for light incident from the microlens LS1 are formed into inverted cones, so that the incident light can be easily introduced into the first to fourth subpixels SP1 to SP4.

[0357] In addition, preferably, the light shielding layer BL2 is formed thicker than the color filters CF1 to CF4, and the upper portion of the light shielding layer BL2 is arranged to protrude toward the microlens LS1 in a manner exceeding the upper surface (the surface facing the light-transmitting layers TL2A to TL2D) of the color filters CF1 to CF4. Therefore, the light-transmitting layers TL2A to TL2D arranged on the upper surfaces of the color filters CF1 to CF4 can be separated by the light shielding layer BL2.

[0358] The light shielding layer BL2 includes a material having a lower refractive index than the light-transmitting layers TL2A to TL2D. Therefore, the light shielding layer BL2 functions as a light shielding layer and reflects the light collected by the microlens LS1 toward the light-transmitting layers TL2A to TL2D, thereby guiding the light to each of the first sub-pixel SP1 to the fourth sub-pixel SP4. In addition, the light shielding layer BL2 prevents the light incident toward the color filters CF1 to CF4 from being incident on other adjacent color filters.

[0359] The light shielding layer BL2 preferably includes a material having a refractive index of 1.3 or less, for example, and the lower the refractive index, the more preferable it is. As such a material, metal oxides and the like can be used.

[0360] The light-transmitting layers TL2A to TL2D are respectively disposed on the color filters CF1 to CF4, and the light-transmitting layers TL2A to TL2D are disposed to respectively cover the first subpixel SP1 to the fourth subpixel SP4 of the solid-state imaging device 100. The cross-sections of the light-transmitting layers TL2A to TL2D are preferably formed into an inverted cone. Therefore, the area of ​​the light incident surface (the upper surface of the light-transmitting layers TL2A to TL2D) is larger than the area of ​​the light exit surface (the lower surface of the light-transmitting layers TL2A to TL2D) for allowing light to exit toward the color filters CF1 to CF4. Therefore, the incident light can be easily introduced into the first subpixel SP1 to the fourth subpixel SP4.

[0361] Note that the light-transmitting layers TL2A to TL2D may be provided between the color filters CF1 to CF4 and the solid-state imaging device 100 ( 101 to 104 ).

[0362] The light-transmitting layers TL2A to TL2D may include any material having the same refractive index as that of the microlens LS1 or a higher refractive index than that of the microlens LS1. As such a material, for example, an organic material such as an acrylic resin material, an inorganic material such as silicon nitride, or a metal oxide such as aluminum oxide, tantalum oxide, and titanium oxide, etc. can be used.

[0363] As described above, the solid-state imaging device 1003 of the ninth embodiment to which the present technology is applied includes a light shielding layer BL2 as a second light focusing portion disposed above the first pixel separation region DTI1 and above the second pixel separation region DTI2. In addition, the solid-state imaging device 1003 includes light-transmitting layers TL2A to TL2D, which are respectively located above the first sub-pixel SP1 to the fourth sub-pixel SP4 and are disposed in an area surrounded by the light shielding layer BL2, and these light-transmitting layers TL2A to TL2D include a material having a higher refractive index than that of the light shielding layer BL2.

[0364] Therefore, according to the solid-state imaging device 1003 of the ninth embodiment of the present technology, both high dynamic range operation and autofocus operation can be achieved in a pixel configuration in which a plurality of unit pixels each include two or more sub-pixels SP (first sub-pixel SP1 to fourth sub-pixel SP4).

[0365] In addition, according to the solid-state imaging device 1003 of the ninth embodiment of the present technology, light incident on the color filters CF1 to CF4 is prevented from being incident on other adjacent color filters by the light shielding layer BL2. In addition, in the solid-state imaging device 1003, light gathered by the microlens LS1 provided for each unit pixel can be prevented from being irradiated to the first pixel separation area DTI1 and the second pixel separation area DTI2. Therefore, in the solid-state imaging device 1003 according to the ninth embodiment of the present technology, crosstalk can be reduced, thereby preventing a decrease in sensitivity in each solid-state imaging device 100 and preventing an increase in optical color mixing.

[0366] <Modification>

[0367] (1) First Modification

[0368] Fig.45 An example of a cross-sectional view of a solid-state imaging device 1003A which is a first modification example of the solid-state imaging device 1003 to which the ninth embodiment of the present technology is applied is shown.

[0369] The solid-state imaging device 1003A includes: a first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; a first light-gathering portion that covers the entire unit pixel; and a plurality of second light-gathering portions that cover each of the sub-pixels. In the solid-state imaging device according to the first variant of the ninth embodiment, the second light-gathering portion includes: a light-shielding layer that is disposed above the first pixel separation region and above the second pixel separation region; a light-transmitting layer that is located above the sub-pixel and is disposed in a region surrounded by the light-shielding layer, and that includes a material having a higher refractive index than that of the light-shielding layer; and a first intermediate layer that is disposed between the first light-gathering portion and the light-transmitting layer.

[0370] The solid-state imaging device 1003A differs from the solid-state imaging device 1003 in that the solid-state imaging device 1003A includes a light shielding layer BL3 arranged above the first pixel separation area DTI1, a light shielding layer BL2 arranged above the second pixel separation area DTI2, and a first intermediate layer ML1A to ML1D (ML1C and ML1D are not shown).

[0371] In the solid-state imaging device 1003A, a light shielding layer BL2 is provided above the second pixel isolation region DTI2.

[0372] In the solid-state imaging device 1003A, a light shielding layer BL3 is provided above the first pixel isolation region DTI1, in which the light shielding layer BL1 and the light shielding layer BL2 are formed together. The light shielding layer BL3 is formed integrally, for example, in a state where the light shielding layer BL2 covers at least one of the side surfaces and the upper surface of the light shielding layer BL1.

[0373] The light shielding layer BL1 has the same structure as the light shielding layer BL1 in the solid-state imaging device 1002 according to the eighth embodiment. The light shielding layer BL1 only needs to include a material capable of shielding light incident through the microlens LS1, and the light shielding layer BL1 can be, for example, a metal layer formed of a metal such as tungsten (W) or titanium (Ti).

[0374] The light shielding layer BL2 has the same structure as the light shielding layer BL2 in the solid-state imaging device 1003 according to the ninth embodiment. The light shielding layer BL2 is formed thicker than the color filters CF1 to CF4, and the upper portion of the light shielding layer BL2 is arranged to protrude toward the microlens LS1 in a manner exceeding the upper surface of the color filters CF1 to CF4 (the surface facing the light-transmitting layers TL2A to TL2D).

[0375] Hereinafter, the first middle layers ML1A to ML1D will be described.

[0376] The first intermediate layers ML1A to ML1D are disposed on the light-transmitting layers TL2A to TL2D. That is, the first intermediate layers ML1A to ML1D are disposed above the first to fourth sub-pixels SP1 to SP4, respectively.

[0377] The first intermediate layers ML1A to ML1D include a material having a higher refractive index than that of the microlens LS1 and lower refractive index than that of the light-transmitting layers TL2A to TL2D. Examples of the material constituting the first intermediate layers ML1A to ML1D may include metal oxide.

[0378] When the microlens LS1 includes an organic material (refractive index greater than or equal to 1.5 and less than or equal to 1.6) and the light-transmitting layers TL2A to TL2D include titanium oxide (refractive index approximately 2.5) or tantalum oxide (refractive index approximately 2.1), the first middle layers ML1A to ML1D include, for example, aluminum oxide (refractive index approximately 1.7).

[0379] Note that the first intermediate layers ML1A to ML1D are not limited to having a single-layer structure but may have a multi-layer structure. In the case where the first intermediate layers ML1A to ML1D have a multi-layer structure, the materials of the layers are selected so that their refractive index gradually increases as they approach the light-transmitting layers TL2A to TL2D from the microlens LS1.

[0380] As described above, in the solid-state imaging device 1003A according to the first modification, by providing the first intermediate layers ML1A to ML1D, the refractive index difference between the microlens LS1 and the first intermediate layers ML1A to ML1D and the refractive index difference between the first intermediate layers ML1A to ML1D and the light-transmitting layers TL2A to TL2D can be reduced. Thus, light incident from the microlens LS1 is hardly reflected at the boundaries of the layers, and thus the amount of light incident on the first subpixel SP1 to the fourth subpixel SP4 is hardly reduced, thereby preventing a decrease in sensitivity.

[0381] (2) Second Modification

[0382] Fig.46 An example of a cross-sectional view of a solid-state imaging device 1003B which is a second modification of the solid-state imaging device 1003 to which the ninth embodiment of the present technology is applied is shown.

[0383] The solid-state imaging device 1003B includes: a first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; a first light-collecting portion that covers the entire unit pixel; and a plurality of second light-collecting portions that cover each of the sub-pixels. In the solid-state imaging device according to the second variant of the ninth embodiment, the second light-collecting portion includes: a light-shielding layer that is disposed above the first pixel separation region and above the second pixel separation region; a light-transmitting layer that is located above the sub-pixel and is disposed in a region surrounded by the light-shielding layer, and that includes a material having a higher refractive index than that of the light-shielding layer; a first intermediate layer that is disposed between the first light-collecting portion and the light-transmitting layer; and a second intermediate layer that is disposed between the light-transmitting layer and the color filter.

[0384] The solid-state imaging device 1003B is different from the solid-state imaging device 1003A according to the first modification in that second intermediate layers ML2A to ML2D are provided on the lower surfaces of the light-transmitting layers TL2A to TL2D.

[0385] Hereinafter, the second middle layers ML2A to ML2D will be described.

[0386] The second intermediate layers ML2A to ML2D are disposed on the lower surfaces of the light-transmitting layers TL2A to TL2D. That is, the second intermediate layers ML2A to ML2D are disposed above the first to fourth sub-pixels SP1 to SP4.

[0387] The second middle layers ML2A to ML2D include the same material as the first middle layers ML1A to ML1D.

[0388] Note that the second intermediate layers ML2A to ML2D are not limited to having a single-layer structure, but may also have a multi-layer structure. In the case where the second intermediate layers ML2A to ML2D have a multi-layer structure, the materials of each layer are selected so that their refractive index gradually decreases as they approach the color filters CF1 to CF4 from the light-transmitting layers TL2A to TL2D.

[0389] As described above, in the solid-state imaging device 1003B according to the second modification, by providing the second intermediate layers ML2A to ML2D, the refractive index difference between the light-transmitting layers TL2A to TL2D and the second intermediate layers ML2A to ML2D and the refractive index difference between the second intermediate layers ML2A to ML2D and the color filters CF1 to CF4 can be reduced. Therefore, the light incident from the microlens LS1 is hardly reflected at the boundary between the layers, so that the amount of light incident on the first subpixel SP1 to the fourth subpixel SP4 is hardly reduced, and thus the sensitivity can be prevented from being reduced.

[0390] <11. Tenth Embodiment (Example 10 of Solid-State Image Pickup Device)>

[0391] The solid-state imaging device according to the tenth embodiment of the present technology is a solid-state imaging device having the following structure: in the solid-state imaging devices according to the first to ninth embodiments of the present technology, one side of the second pixel separation region or both the first pixel separation region and the second pixel separation region do not penetrate from the light receiving surface that receives light to the silicon substrate S.

[0392] Fig.47 and Fig.48 A cross-sectional view of the solid-state imaging device 105 having a configuration in which the second pixel separation region DTI2 does not penetrate from a light receiving surface that receives light to the silicon substrate S where a photoelectric conversion element (photodiode) that accumulates signal charges is formed is shown.

[0393] like Fig.47 As shown in FIG. 1 , a solid-state imaging device 105 may be used instead of the solid-state imaging device 100 according to the seventh or eighth embodiment. Fig.48 As shown, a solid-state imaging device 105 may be used instead of the solid-state imaging device 100 according to the ninth embodiment.

[0394] The first pixel separation region DTI1 penetrates from the light receiving surface that receives light to the silicon substrate S where the photoelectric conversion element that accumulates signal charge is formed, and is provided at the boundary portion between pixels (solid-state imaging devices 101 to 104) covered by color filters of different colors. Therefore, in the solid-state imaging device including the first pixel separation region DTI1, color mixing between different color signals can be prevented.

[0395] In addition, the second pixel separation area DTI2 is provided at the boundary portion between the sub-pixels SP (first to fourth sub-pixels SP1 to SP4) within one pixel covered by the color filter of the same color. Therefore, overflow of signal electrons between the sub-pixels SP within the same color pixel can be achieved.

[0396] That is, in Fig.47 and Fig.48 In the structure shown, it is possible to prevent the mixing of signals of different colors between pixels covered by color filters of different colors, and to achieve overflow of signal electrons between sub-pixels SP in pixels covered by color filters of the same color.

[0397] Fig.49 and Fig.50 A cross-sectional view of a solid-state imaging device 106 having a structure in which neither the first pixel separation region DTI1 nor the second pixel separation region DTI2 penetrates from a light receiving surface that receives light to a silicon substrate S where a photoelectric conversion element (photodiode) that accumulates signal charge is formed.

[0398] like Fig.49 As shown in FIG. 1 , a solid-state imaging device 106 may be used instead of the solid-state imaging device 100 according to the seventh or eighth embodiment. Fig.50 As shown, a solid-state imaging device 106 may be used instead of the solid-state imaging device 100 according to the ninth embodiment.

[0399] In this case, the first pixel isolation region DTI1 and the second pixel isolation region DTI2 can be formed at the same height, so that the manufacturing cost can be reduced.

[0400] <12. Eleventh Embodiment (Example 11 of Solid-State Image Pickup Device)>

[0401] The solid-state imaging device 1004 according to the eleventh embodiment of the present technology is a solid-state imaging device 107 having a configuration in which a first pixel separation region DTI1 separates a plurality of unit pixels each including two or more sub-pixels SP (first sub-pixel SP1 to sixteenth sub-pixel SP16). The solid-state imaging device 1004 can be used instead of the solid-state imaging devices according to the first to ninth embodiments.

[0402] like Fig.51 As shown, the solid-state imaging device 107 is provided with a plurality of second pixel separation regions DTI2 having a cross shape, whereby one unit pixel is divided into 16 sub-pixels (first sub-pixel SP1 to sixteenth sub-pixel SP16).

[0403] <13. Twelfth Embodiment (Example of Electronic Equipment)>

[0404] The electronic device according to the twelfth embodiment of the present technology is an electronic device equipped with a solid-state imaging device, wherein the solid-state imaging device includes: a first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes the signal charge accumulated in the sub-pixel to overflow to at least one of the adjacent sub-pixels, and the overflow region is formed between the first sub-pixel and the second sub-pixel. In addition, the electronic device according to the twelfth embodiment of the present technology may be an electronic device equipped with the solid-state imaging device according to the first to eleventh embodiments of the present technology.

[0405] <14. Example of use of a solid-state imaging device to which the present technology is applied>

[0406] Fig.52 It is a diagram showing a usage example of the solid-state imaging device according to the first to eleventh embodiments of the present technology as an image sensor.

[0407] As described below, the solid-state imaging device according to the above-described first to eleventh embodiments can be used in various situations where light such as visible light, infrared light, ultraviolet light, and X-rays are sensed, for example. Fig.52 As shown in, the solid-state imaging device according to any one of the first to eleventh embodiments can be used in equipment (for example, the electronic device according to the seventh embodiment mentioned above) used in the following fields, such as: the field of appreciation of taking images for appreciation, the field of transportation, the field of household appliances, the field of medical services and health care, the field of security, the field of beauty, the field of sports, and the field of agriculture, etc.

[0408] Specifically, in the appreciation field, the solid-state imaging device according to any one of the first to eleventh embodiments can be used in devices for capturing images for appreciation, such as digital cameras, smartphones, or portable phones with camera functions.

[0409] In the field of transportation, the solid-state imaging device according to any one of the first to eleventh embodiments can be used in equipment set up for transportation, such as: vehicle-mounted sensors that capture the front or rear, surroundings and interior of the vehicle for safe driving such as automatic stopping or for identifying the driver's status; surveillance cameras for monitoring moving vehicles and roads; or ranging sensors for measuring the distance between vehicles, etc.

[0410] In the field of household appliances, the solid-state camera device according to any one of the first to eleventh embodiments can be used, for example, in a device provided for household appliances such as televisions, refrigerators, or air conditioners for capturing user gestures and performing device operations based on the gestures.

[0411] In the field of medical services and health care, the solid-state imaging device according to any one of the first to eleventh embodiments can be used, for example, in equipment provided for medical services and health care, such as an endoscope or equipment for angiography by receiving infrared light.

[0412] In the security field, the solid-state imaging device according to any one of the first to eleventh embodiments can be used in equipment provided for security, such as a surveillance camera for crime prevention or a camera for personal authentication, for example.

[0413] In the field of beauty, the solid-state imaging device according to any one of the first to eleventh embodiments can be used in equipment provided for beauty, such as a skin measuring instrument that images the skin or a microscope that images the scalp.

[0414] In the field of sports, the solid-state imaging device according to any one of the first to eleventh embodiments can be used in equipment provided for sports, such as a sports camera or a wearable camera for sports purposes.

[0415] In the agricultural field, the solid-state imaging device according to any one of the first to eleventh embodiments can be used in equipment provided for agriculture, such as a camera for monitoring the state of a field or crops.

[0416] Next, the use examples of the solid-state imaging device according to the first to eleventh embodiments of the present technology will be specifically described. For example, the solid-state imaging device 110 described above can be applied to all types of electronic devices having an imaging function, such as a camera system such as a digital camera or a video camera, or a portable phone having an imaging function. Fig.53 The schematic configuration of an electronic device 111 (camera) as an example is shown. The electronic device 111 is, for example, a video camera capable of capturing still images or moving images, and includes a solid-state imaging device 110, an optical system (optical lens) 310, a shutter device 311, a drive unit 313 for driving the solid-state imaging device 110 and the shutter device 311, and a signal processing unit 312.

[0417] The optical system 310 guides the image light (incident light) from the subject to the pixel portion 110a of the solid-state imaging device 110. The optical system 310 may include a plurality of optical lenses. The shutter device 311 controls the illumination period and the light shielding period of the solid-state imaging device 110. The driving unit 313 controls the transmission operation of the solid-state imaging device 110 and the shutter operation of the shutter device 311. The signal processing unit 312 performs various signal processing on the signal output from the solid-state imaging device 110. The video signal Dout after the signal processing is stored in a storage medium such as a memory, or is output to a monitor, etc.

[0418] Note that embodiments of the present technology are not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present technology.

[0419] Furthermore, the effects described in this specification are merely examples and are not limiting, and other effects may also be provided.

[0420] Furthermore, the present technology can also have the following embodiments.

[0421] [1] A solid-state imaging device comprising:

[0422] A first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels;

[0423] a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and

[0424] an overflow region that causes signal charges accumulated in the sub-pixel to overflow to at least one of adjacent sub-pixels,

[0425] The overflow region is formed between the first sub-pixel and the second sub-pixel.

[0426] [2] The solid-state imaging device according to [1] above, wherein:

[0427] A first P-type region is formed inside the first pixel separation region along a depth direction, a second P-type region is formed around the second pixel separation region along a depth direction, and the first pixel separation region, the overflow region, and the second pixel separation region are formed so as to be included in a cross section obtained by cutting a region of a unit pixel not separated by the second pixel separation region along a light incident direction.

[0428] Moreover, the overflow region has at least one of a third P-type region and a fourth P-type region, the impurity concentration of the third P-type region is lower than the average impurity concentration of the first P-type region, and the impurity concentration of the fourth P-type region is lower than the average impurity concentration of the second P-type region.

[0429] [3] The solid-state imaging device according to [1] or [2] above, wherein:

[0430] A first P-type region is formed inside the first pixel separation region along the depth direction, a second P-type region is formed around the second pixel separation region along the depth direction, an N-type region is formed between the first P-type region and the second P-type region, and the first pixel separation region, the overflow region, and the second pixel separation region are formed so as to be included in a cross section of a unit pixel region not separated by the second pixel separation region cut along the incident direction of light,

[0431] Moreover, the overflow region has at least one of a third P-type region, a fourth P-type region and a fifth N-type region, the impurity concentration of the third P-type region is lower than the average impurity concentration of the first P-type region, the impurity concentration of the fourth P-type region is lower than the average impurity concentration of the second P-type region, and the fifth N-type region is formed between the third P-type region and the fourth P-type region.

[0432] [4] The solid-state imaging device according to any one of [1] to [3] above, wherein:

[0433] A first P-type region is formed inside the first pixel separation region in a depth direction, and the overflow region is formed between one inner side of the first pixel separation region and another inner side of the first pixel separation region facing the one inner side, and is included in a cross section of a unit pixel region not separated by the second pixel separation region cut along a light incident direction.

[0434] Furthermore, the overflow region is formed to have a depth between a region where a transistor for controlling the overflow is arranged and a region having the highest impurity concentration among the N-type regions accumulating the signal charge.

[0435] [5] The solid-state imaging device according to any one of [1] to [4] above, wherein the second pixel separation region separates each of the plurality of unit pixels into 2×2 sub-pixels.

[0436] [6] The solid-state imaging device according to any one of [1] to [5] above, wherein the second pixel separation region has a cross shape.

[0437] [7] The solid-state imaging device according to [6] above, wherein the overflow region is formed in a region in which the first pixel separation region and the second pixel separation region having the cross shape are close to each other.

[0438] [8] The solid-state imaging device according to [6] or [7] above, wherein a proximity distance between the first pixel separation region and the second pixel separation region having the cross shape is the same or different.

[0439] [9] The solid-state imaging device according to any one of [6] to [8] above, wherein at least a portion of the second pixel separation region having the cross shape is connected to the first pixel separation region.

[0440]

[10] The solid-state imaging device according to any one of [1] to [9] above, further including a transfer gate that performs voltage control for causing the signal charge to overflow.

[0441]

[11] The solid-state imaging device according to

[10] above, further comprising a power supply that supplies voltages of three or more values ​​to the transfer gate.

[0442]

[12] The solid-state imaging device according to

[10] or

[11] above, further comprising a booster circuit for raising or lowering a voltage supplied to the transfer gate.

[0443]

[13] A solid-state imaging device according to any one of [1] to

[12] above, wherein the second pixel separation region extends from a light receiving surface that receives light to a silicon substrate on which a photoelectric conversion element that accumulates the signal charge is formed.

[0444]

[14] A solid-state imaging device comprising:

[0445] A first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels;

[0446] a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region;

[0447] A first light focusing portion covering the entire unit pixel; and

[0448] A plurality of second light focusing portions respectively cover the sub-pixels.

[0449]

[15] The solid-state imaging device according to

[14] above, wherein the first light focusing section and the second light focusing section are lenses.

[0450]

[16] The solid-state imaging device according to

[14] above, wherein:

[0451] The first light focusing part is a lens,

[0452] Moreover, the second light-focusing portion includes: a light-shielding portion, which is arranged above the first pixel separation area and above the second pixel separation area; and a light-transmitting layer, which is located above the sub-pixel and is arranged in an area surrounded by the light-shielding portion, and the light-transmitting layer includes a material with a refractive index higher than that of the light-shielding portion.

[0453]

[17] A solid-state imaging device according to

[16] above, further comprising an intermediate layer, the intermediate layer being disposed between the first light-focusing portion and the light-transmitting layer, and the intermediate layer comprising a material having a refractive index higher than that of the first light-focusing portion and lower than that of the light-transmitting layer.

[0454]

[18] The solid-state imaging device according to any one of

[14] to

[17] above, wherein:

[0455] The light shielding portion disposed above the first pixel separation region includes a material containing at least one of a material having a refractive index lower than that of the light-transmitting layer and a metal,

[0456] Furthermore, the light shielding portion provided above the second pixel separation region includes a material having a refractive index lower than that of the light-transmitting layer.

[0457]

[19] The solid-state imaging device according to any one of

[14] to

[18] above, further comprising a color filter provided between the sub-pixel and the second light-collecting portion.

[0458]

[20] An electronic device equipped with a solid-state imaging device, wherein:

[0459] The solid-state imaging device comprises:

[0460] A first pixel separation region that separates a plurality of unit pixels each including two or more sub-pixels;

[0461] a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and

[0462] an overflow region that causes signal charges accumulated in the sub-pixel to overflow to at least one of adjacent sub-pixels,

[0463] Furthermore, the overflow region is formed between the first sub-pixel and the second sub-pixel.

[0464]

[21] An electronic device comprising the solid-state imaging device according to any one of [1] to

[19] above.

[0465] Description of Reference Numerals

[0466] 100, 101, 102, 103, 104, 105, 106, 107 solid-state imaging device

[0467] 1000, 1001, 1002, 1002A, 1002B, 1003, 1003A, 1003B solid-state imaging devices

[0468] DTI1 first pixel separation area

[0469] DTI2 second pixel separation area

[0470] SP1 to SP16: first to sixteenth sub-pixels

[0471] OF, OF1 to OF4 overflow area

[0472] TG, TG1 to TG4 transmission gates

[0473] FD, FD1 to FD4 floating diffusion

[0474] TR1 to TR4 transistors

[0475] PD1 to PD4 photodiodes

[0476] PR1 first P-type region

[0477] PR2 second P-type region

[0478] PR3 third P-type region

[0479] PR4 Fourth P-type region

[0480] NR N-type region

[0481] NC Fifth N-type region

[0482] CF, CF1 to CF4 color filters

[0483] LS1 Micro Lens

[0484] LS2A to LS2D Second Lens

[0485] BL light shielding layer

[0486] TL2A to TL2D light-transmitting layer

[0487] ML1A to ML1D first intermediate layer

[0488] ML2A to ML2D Second Intermediate Layer

Claims

1. A camera device, comprising: a plurality of pixel sets, wherein in a plan view, the plurality of pixel sets are arranged two-dimensionally; Each of the plurality of pixel sets includes four photoelectric conversion regions. Each pixel set in the plurality of pixel sets includes four overflow areas, wherein, in the plan view, each of the plurality of pixel sets is separated from each other by a first separation region, and Wherein, in the plan view, the four photoelectric conversion regions of each pixel set in the plurality of pixel sets are separated from each other by a second separation region.

2. The imaging device according to claim 1, wherein: The four photoelectric conversion regions are arranged in a 2×2 manner.

3. The imaging device according to claim 1, wherein: The first overflow region of the four overflow regions is provided between the first photoelectric conversion region and the second photoelectric conversion region of the four photoelectric conversion regions.

4. The imaging device according to claim 3, wherein: The second overflow region among the four overflow regions is provided between the second photoelectric conversion region and the third photoelectric conversion region among the four photoelectric conversion regions.

5. The imaging device according to claim 4, wherein: A third overflow region among the four overflow regions is provided between the third photoelectric conversion region and a fourth photoelectric conversion region among the four photoelectric conversion regions.

6. The imaging device according to claim 5, wherein: A fourth overflow region among the four overflow regions is provided between the fourth photoelectric conversion region among the four photoelectric conversion regions and the first photoelectric conversion region.

7. The imaging device according to claim 1, wherein: The second separation region includes four parts.

8. The imaging device according to claim 7, wherein: A first portion of the four portions of the second separation region is provided between a first photoelectric conversion region and a second photoelectric conversion region of the four photoelectric conversion regions.

9. The imaging device according to claim 8, wherein: A second portion of the four portions of the second separation region is provided between the second photoelectric conversion region and the third photoelectric conversion region of the four photoelectric conversion regions.

10. The imaging device according to claim 9, wherein: A third portion of the four portions of the second separation region is provided between the third photoelectric conversion region and a fourth photoelectric conversion region of the four photoelectric conversion regions.

11. The imaging device according to claim 10, wherein: A fourth portion of the four portions of the second separation region is provided between the fourth photoelectric conversion region of the four photoelectric conversion regions and the first photoelectric conversion region.

12. The imaging device according to any one of claims 1 to 11, wherein: The plurality of pixel sets include a first pixel set, a second pixel set, a third pixel set, and a fourth pixel set arranged in a 2×2 manner, The four photoelectric conversion regions of the first pixel set and the fourth pixel set correspond to light in a first wavelength range.

13. The imaging device according to claim 12, wherein: The four photoelectric conversion regions of the second pixel set correspond to light of a second wavelength range, which is different from the first wavelength range.

14. The imaging device according to claim 13, wherein: The four photoelectric conversion regions of the third pixel set correspond to light of a third wavelength range, which is different from the first wavelength range and the second wavelength range.

15. The imaging device according to any one of claims 1 to 11, wherein: The four photoelectric conversion regions are connected to the floating diffusion region.

16. The imaging device according to any one of claims 1 to 11, wherein: A microlens is disposed above the four photoelectric conversion regions.

Images