Perovskite solar cell for near space application and preparation method thereof

Abstract

The application discloses a perovskite solar cell for near space application and a preparation method thereof, which comprises, from bottom to top, a PI substrate, a first metallic TaN electrode, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a second metallic TaN electrode; when the PI is an opaque substrate, a TaON passivation layer is arranged around the second metallic TaN electrode, an anti-reflection layer is arranged on the second metallic TaN electrode and the TaON passivation layer, and the thickness of the second metallic TaN electrode is less than 5 nm; when the PI is a transparent substrate, a TaON passivation layer is arranged around the first metallic TaN electrode, and an anti-reflection layer is arranged between the PI substrate and the first metallic TaN electrode and the TaON passivation layer, and the thickness of the first metallic TaN electrode is less than 5 nm. The application provides a high-stability perovskite cell for near space application.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductors, and particularly relates to a perovskite solar cell for near space application. BACKGROUND

[0002] Perovskite solar cells have attracted extensive attention due to their high specific power, low cost and high photoelectric conversion efficiency. In the near space environment, perovskite solar cells can fully absorb solar radiation energy and convert it into electrical energy without obstruction, thereby providing power support for airships and other aircraft.

[0003] However, compared with ground conditions, perovskite solar cells in the near space need to withstand strong ultraviolet radiation and wide-range temperature fluctuations (-100 to 100℃). During the flight of airships and other aircraft from the ground to the near space, the cells will also be subjected to different degrees of stress. At present, researchers mainly use conventional substrates such as PEN and PET to prepare perovskite solar cells in the near space, and then sputter transparent ITO electrodes on the surface of the substrates and deposit subsequent transport layers and perovskite films. However, conventional PET and PEN substrates have a narrow working temperature range, poor heat resistance and poor mechanical properties, and the substrates are prone to cracking in the near space, thereby leading to cell failure and ultimately affecting the overall performance of the cells. In addition, the ITO on the surface of the substrate is relatively brittle and is prone to cracking or breaking under processing, bending or external force, which limits the flexibility and stability of the device. In addition, the resistance of the ITO electrode changes with temperature, which may affect the overall performance of the cell, especially in extreme environments such as the near space.

[0004] The existing perovskite solar cell technology has not yet met the stringent requirements of the near space environment, so it is still necessary to further improve its performance and reliability in the near space environment in practical applications. In addition, in practical applications, airships and other aircraft in the flight process from the ground to the near space, the perovskite solar cell has the problem of being affected by moisture and oxygen, so moisture resistance and oxygen resistance are also important considerations. SUMMARY

[0005] In order to solve the above problems in the prior art, the application provides a perovskite solar cell for near space application. The technical problem to be solved by the application is solved by the following technical scheme.

[0006] In a first aspect, the embodiments of the application provide a perovskite solar cell for near space application, which comprises, from bottom to top, a PI substrate, a first metallic TaN electrode, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer and a second metallic TaN electrode.

[0007] When the PI substrate is an opaque substrate, a TaON passivation layer is arranged around the second metallic TaN electrode, an anti-reflection layer is arranged on the second metallic TaN electrode and the TaON passivation layer, at this time, the thickness of the first metallic TaN electrode is required to be greater than 50 nm, and the thickness of the second metallic TaN electrode is required to be less than 5 nm; wherein the TaON passivation layer is obtained by in-situ oxidizing part of the second metallic TaN electrode.

[0008] When the PI substrate is a transparent substrate, a TaON passivation layer is arranged around the first metallic TaN electrode, an anti-reflection layer is arranged between the PI substrate and the first metallic TaN electrode and the TaON passivation layer, at this time, the thickness of the first metallic TaN electrode is required to be less than 5 nm, and the thickness of the second metallic TaN electrode is required to be greater than 50 nm; wherein the TaON passivation layer is obtained by in-situ oxidizing part of the first metallic TaN electrode.

[0009] In an embodiment of the present application,

[0010] When the PI substrate is an opaque substrate, the thickness of the first metallic TaN electrode is 50 nm to 100 nm, and the thickness of the second metallic TaN electrode is 2 nm to 5 nm.

[0011] When the PI substrate is a transparent substrate, the thickness of the first metallic TaN electrode is 2 nm to 5 nm, and the thickness of the second metallic TaN electrode is 50 nm to 100 nm.

[0012] In an embodiment of the present application, the thickness of the TaON passivation layer is 2 nm to 5 nm.

[0013] In a second aspect, an embodiment of the present application provides a preparation method of a perovskite solar cell for near-space application, and the preparation method comprises the following steps:

[0014] An opaque PI substrate is selected, and the PI substrate is pretreated;

[0015] A first metallic TaN electrode is prepared on the pretreated PI substrate; wherein the thickness of the first metallic TaN electrode is greater than 50 nm;

[0016] A hole transport layer is prepared on the first metallic TaN electrode;

[0017] A perovskite light-absorbing layer is prepared on the hole transport layer;

[0018] An electron transport layer is prepared on the perovskite light-absorbing layer;

[0019] preparing a second metallic TaN electrode on the electron transport layer, wherein the thickness of the second metallic TaN electrode is less than 5nm;

[0020] oxidizing part of the second metallic TaN electrode in situ to prepare a TaON passivation layer around the second metallic TaN electrode;

[0021] preparing an anti-reflection layer on the second metallic TaN electrode and the TaON passivation layer.

[0022] In an embodiment of the present application, the first metallic TaN electrode is prepared on the pretreated PI substrate, comprising:

[0023] The first metallic TaN electrode with a thickness of 50nm-100nm is prepared on the pretreated PI substrate by a magnetron reactive sputtering process;

[0024] The second metallic TaN electrode is prepared on the electron transport layer, comprising:

[0025] The second metallic TaN electrode with a thickness of 2nm-5nm is prepared on the electron transport layer by a magnetron reactive sputtering process.

[0026] In an embodiment of the present application, part of the second metallic TaN electrode is oxidized in situ to prepare a TaON passivation layer around the second metallic TaN electrode, comprising:

[0027] Part of the second metallic TaN electrode is oxidized in situ by a plasma treatment process to prepare a TaON passivation layer with a thickness of 2nm-5nm around the second metallic TaN electrode.

[0028] In a third aspect, an embodiment of the present application provides a preparation method of a perovskite solar cell for near-space applications, comprising:

[0029] selecting a transparent PI substrate and pretreating the PI substrate;

[0030] preparing an anti-reflection layer on the pretreated PI substrate;

[0031] preparing a first metallic TaN electrode on the anti-reflection layer, wherein the thickness of the first metallic TaN electrode is less than 5nm;

[0032] oxidizing part of the first metallic TaN electrode in situ to prepare a TaON passivation layer around the first metallic TaN electrode;

[0033] preparing a hole transport layer on the TaON passivation layer and the first metallic TaN electrode;

[0034] a perovskite light-absorbing layer is prepared on the hole transport layer;

[0035] an electron transport layer is prepared on the perovskite light-absorbing layer;

[0036] a second metallic TaN electrode is prepared on the electron transport layer; wherein the thickness of the second metallic TaN electrode is greater than 50 nm.

[0037] In an embodiment of the present application, a first metallic TaN electrode is prepared on the anti-reflection layer, comprising:

[0038] a first metallic TaN electrode with a thickness of 2 nm to 5 nm is prepared on the anti-reflection layer by a magnetron reactive sputtering process;

[0039] a second metallic TaN electrode is prepared on the electron transport layer, comprising:

[0040] a second metallic TaN electrode with a thickness of 50 nm to 100 nm is prepared on the electron transport layer by a magnetron reactive sputtering process.

[0041] In an embodiment of the present application,

[0042] part of the first metallic TaN electrode is in-situ oxidized to prepare a TaON passivation layer around the first metallic TaN electrode, comprising:

[0043] part of the first metallic TaN electrode is in-situ oxidized to prepare a TaON passivation layer with a thickness of 2 nm to 5 nm around the first metallic TaN electrode by a plasma treatment process.

[0044] The present application has the following beneficial effects:

[0045] The perovskite solar cell for near space application provided by the application uses metallic TaN thin film as a conductive electrode, PI as a substrate, and the combination is used as a base for setting each functional layer, so that a perovskite solar cell for near space application with high stability can be realized. Since the PI substrate has better high temperature resistance (up to 400 DEG C or more), corrosion resistance, ultraviolet resistance and strong mechanical properties, the battery is not easy to crack in the near space; the metallic TaN thin film has high mechanical hardness and corrosion resistance, and is more resistant to cracking than brittle materials, reducing the risk of cracking under stress, thereby improving the stability and durability of the device, and also has a high melting point and good thermal stability, suitable for use in high temperature and harsh environments, and the conductive resistance of the metallic TaN electrode is smaller, so that the performance of the perovskite solar cell can be improved. The TaN thin film is compatible with the PI substrate and can be prepared by various processes, and the light transmittance of the PI substrate can be changed, and the TaN can also be used as a transparent or opaque conductive electrode, so that the combination of the PI substrate and the metallic TaN as the base can be used for the preparation of various batteries, such as hybrid perovskite batteries, all-inorganic perovskite batteries and large-area perovskite batteries, which has a wide application market, and the base can be recycled for the production of new perovskite solar cells or for the manufacture of other products to realize effective recycling and recycling of resources, which helps to reduce the production cost. The TaON passivation layer effectively prevents water and oxygen from penetrating into the perovskite material, thereby reducing the risk of material degradation and battery failure, and by preventing the intrusion of water and oxygen, the TaON passivation layer can significantly prolong the service life of the perovskite battery. In summary, according to the requirements of near space application, the PI substrate and the metallic TaN are combined as a base to improve the performance of the battery, enhance the stability of the battery, and reduce the cost of the perovskite solar cell. The TaON passivation layer obtained by local in-situ oxidation of the metallic TaN electrode not only isolates the influence of water and oxygen on the perovskite solar cell in design and application, but also simplifies the process steps, improves the production efficiency and reduces the cost.

[0046] The application will be further described in detail below with reference to the accompanying drawings and examples. BRIEF DESCRIPTION OF DRAWINGS

[0047] Figure 1 is a structural schematic diagram of a perovskite solar cell for near space application provided by an embodiment of the application;

[0048] Figure 2 is a structural schematic diagram of another perovskite solar cell for near space application provided by an embodiment of the application;

[0049] Figure 3is a structure schematic diagram of another perovskite solar cell for near space application provided by an embodiment of the present application;

[0050] Figure 4 is a structure schematic diagram of another perovskite solar cell for near space application provided by an embodiment of the present application; Figure 2 and Figure 3 is a top view schematic diagram at a metallic TaN electrode;

[0051] Figure 5 is a structure schematic diagram of another perovskite solar cell for near space application provided by an embodiment of the present application; Figure 2 is a flow schematic diagram of a preparation method of the perovskite solar cell for near space application shown in the figure;

[0052] Figure 6 is a structure schematic diagram of another perovskite solar cell for near space application provided by an embodiment of the present application; Figure 3 is a flow schematic diagram of a preparation method of the perovskite solar cell for near space application shown in the figure. DETAILED DESCRIPTION

[0053] The present application will be further described below in conjunction with specific embodiments, but the embodiments of the present application are not limited thereto.

[0054] In a first aspect, referring to Figure 1 The present application provides a perovskite solar cell for near space application, which comprises, from bottom to top, a PI substrate, a first metallic TaN electrode, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a second metallic TaN electrode.

[0055] The PI substrate used in the present application avoids the problem that the glass transition temperature of conventional PEN and PET substrates is low, so that the substrate will have a certain degree of thermal expansion at the general annealing temperature required for cell preparation, which will impact the perovskite layer and further form crack lines in the thin film. It is necessary to select a PI substrate for a full-inorganic perovskite solar cell which has a higher annealing temperature requirement.

[0056] When the PI substrate is an opaque substrate, for example, a PI substrate with a thickness greater than 100 μm can be used as an opaque substrate, and the transparency of the PI substrate is determined according to the actual situation, such as Figure 2 The second metallic TaN electrode is surrounded by a TaON passivation layer, and an anti-reflection layer is arranged on the second metallic TaN electrode and the TaON passivation layer. In this case, the thickness of the first metallic TaN electrode is required to be greater than 50 nm, which can be used as an opaque electrode, and the thickness of the second metallic TaN electrode is required to be less than 5 nm, which can be used as a transparent electrode. The TaON passivation layer is obtained by in-situ oxidation of part of the second metallic TaN electrode. The entire Figure 2The shown is a reverse type perovskite solar cell structure, and a similar structure design can also be performed for a positive type perovskite solar cell structure.

[0057] When the PI substrate is a transparent substrate, for example, a PI substrate with a thickness less than or equal to 100 μm is used as a transparent substrate, for example, a PI substrate with a thickness less than or equal to 100 μm is used as a transparent substrate, and a PI substrate with a thickness less than or equal to 100 μm is used as a transparent substrate. Figure 3 The shown is a reverse type perovskite solar cell structure, and a similar structure design can also be performed for a positive type perovskite solar cell structure. Figure 3 The shown is a reverse type perovskite solar cell structure, and a similar structure design can also be performed for a positive type perovskite solar cell structure.

[0058] In the embodiment of the present application, when the PI substrate is an opaque substrate, the thickness of the first metallic TaN electrode is 50 nm to 100 nm, and the thickness of the second metallic TaN electrode is 2 nm to 5 nm; when the PI substrate is a transparent substrate, the thickness of the first metallic TaN electrode is 2 nm to 5 nm, and the thickness of the second metallic TaN electrode is 50 nm to 100 nm.

[0059] The perovskite light-absorbing layer material in the embodiment of the present application is not limited, for example, it can be Cs 0.05 FA 0.8 MA 0.15 PbI 2.25 Br 0.75 The thickness of the perovskite light-absorbing layer is 700 nm to 1.2 μm.

[0060] In the embodiment of the present application, whether the Figure 2 The TaON passivation layer in the middle surrounds the second metallic TaN electrode, or Figure 3 The TaON passivation layer in the middle surrounds the first metallic TaN electrode, and the thickness of the TaON passivation layer is 2 nm to 5 nm. Figure 2 The top view structure at the second metallic TaN electrode in the middle, Figure 3 The top view structure at the first metallic TaN electrode in the middle is shown in the figure. Figure 4

[0061] The material of the hole transport layer in the embodiment of the present application can use a P-type semiconductor material, for example, one of nickel oxide (NiO x ), cobalt oxide (CoO) and the like; the thickness of the hole transport layer is 20 nm to 50 nm.

[0062] ​The material of the electron transport layer can be an N-type semiconductor material, such as TiO2, SnO2, ZnO, C 60 The thickness of the electron transport layer is 20-40 nm.

[0063] The material of the anti-reflection layer can be MgF2. The thickness of the anti-reflection layer is 30-120 nm. The anti-reflection layer mainly reduces the loss of light reflection, thereby improving the light absorption efficiency, and further improving the photoelectric conversion efficiency of the battery.

[0064] In summary, the perovskite solar cell for near space application provided by the embodiment of the present application uses metallic TaN thin film as a conductive electrode, PI as a substrate, and then uses this combination as a base to set up each functional layer, which can realize a perovskite solar cell for near space application with high stability. Since the PI substrate exhibits better high temperature resistance (up to 400℃ or above), corrosion resistance, ultraviolet resistance and strong mechanical properties, the battery is not prone to cracking in the near space; the metallic TaN thin film has higher mechanical hardness and corrosion resistance, and is more resistant to cracking than brittle materials, thereby reducing the risk of cracking under stress, improving the stability and durability of the device, and also having a higher melting point and good thermal stability, which is suitable for use in high temperature and harsh environments, and the conductive resistance of the metallic TaN electrode is smaller, thereby improving the performance of the perovskite solar cell. The TaN thin film is compatible with the PI substrate and can be prepared by various processes, and the light transmittance of the PI substrate is variable, and TaN can also be used as a transparent or opaque conductive electrode, so that the combination of the PI substrate and the metallic TaN as a base can be used for the preparation of various batteries, such as hybrid perovskite batteries, all-inorganic perovskite batteries and large-area perovskite batteries, which has a wide application market, and the base can be recycled for the production of new perovskite solar cells or for the manufacture of other products, so as to realize the effective recycling and recycling of resources, which helps to reduce the production cost. The TaON passivation layer effectively prevents water and oxygen from penetrating into the perovskite material, thereby reducing the risk of material degradation and battery failure. By preventing the intrusion of water and oxygen, the TaON passivation layer can significantly prolong the service life of the perovskite battery. In summary, in view of the demand for near space application, the embodiment of the present application innovatively combines the PI substrate and the metallic TaN as a base to improve the performance of the battery, enhance the stability of the battery, and reduce the cost of the perovskite solar cell. The TaON passivation layer obtained by local in-situ oxidation of the metallic TaN electrode not only isolates the influence of water and oxygen on the perovskite solar cell in design and application, but also simplifies the process steps, improves the production efficiency and reduces the cost.

[0065] In a second aspect, please refer toFigure 5 The present invention provides a method for preparing a perovskite solar cell for near-space applications, comprising the following steps:

[0066] S101 , selecting an opaque PI substrate and pre-treating the PI substrate.

[0067] In the embodiment of the present invention, the opaque PI substrate is ultrasonically cleaned using acetone, alcohol, and deionized water in sequence for 15 minutes, and then placed on a sample stage in a vacuum chamber after drying.

[0068] S102, preparing a first metallic TaN electrode on the pretreated PI substrate; wherein the thickness of the first metallic TaN electrode is greater than 50 nm.

[0069] The embodiment of the present invention adopts the magnetron reactive sputtering process to prepare the first metallic TaN electrode, specifically: first, the vacuum degree of the vacuum chamber is better than 10 -7 Pa, so that nitrogen and argon enter the vacuum chamber through the gas flowmeter, the argon flow rate is 50sccm~100sccm, the nitrogen flow rate is 10sccm~50sccm, the vacuum chamber temperature is set to 20℃~100℃, the DC source power during sputtering is 100W~200W, and finally a first metallic TaN electrode with a thickness greater than 50nm is prepared on the pretreated PI substrate, more preferably a first metallic TaN electrode with a thickness of 50nm~100nm is prepared on the pretreated PI substrate.

[0070] S103, preparing a hole transport layer on the first metallic TaN electrode.

[0071] The hole transport layer of the embodiment of the present invention can be made of P-type semiconductor material, such as nickel oxide (NiO x ), cobalt oxide (CoO) and other materials. Nickel oxide (NiO x ) as an example: using NiO x NiO is deposited on the target by magnetron reactive sputtering process x Membrane, growth pressure is 10 -4 Pa, high purity argon gas is introduced at a flow rate of 20 sccm to 30 sccm and a power of 50 W to 65 W, and a NiO layer with a thickness of 20 nm to 50 nm is prepared on the first metallic TaN electrode. x After sputtering, anneal at a temperature of 200°C to 250°C for 15 minutes to 30 minutes.

[0072] S104, preparing a perovskite light absorbing layer on the hole transport layer.

[0073] The material of the perovskite light absorbing layer in the embodiment of the present invention is not limited, for example, it can be Cs 0.05 FA0.8 MA 0.15 PbI 2.25 Br 0.75 To prepare Cs 0.05 FA 0.8 MA 0.15 PbI 2.25 Br 0.75 The perovskite light-absorbing layer is taken as an example: a Cs 0.05 FA 0.8 MA 0.15 PbI 2.25 Br 0.75 perovskite precursor solution is prepared, and the solution is dissolved under continuous stirring; the perovskite precursor solution is spin-coated on the hole transport layer by using a one-step spin coating method, and the specific spin coating process is as follows: the front-stage rotating speed is 1500 rpm to 2000 rpm, the duration is 5 s, the rear-stage rotating speed is 5000 rpm to 6000 rpm, the duration is 45 s, 180 μL to 200 μL of anti-solvent chlorobenzene is added dropwise at the 12th second to the 15th second of the spin coating to perform extraction, and the perovskite light-absorbing layer is prepared after the spin coating is completed, and the perovskite light-absorbing layer is annealed at an annealing temperature of 100 ℃ to 120 ℃ for 10 min to 20 min.

[0074] S105, an electron transport layer is prepared on the perovskite light-absorbing layer.

[0075] The material of the electron transport layer in the embodiment of the application can adopt an N-type semiconductor material, such as TiO2, SnO2, ZnO, C 60 , or the like. Taking C 60 as an example: a layer of C 60 is evaporated on the perovskite light-absorbing layer by using a thermal evaporation process, the vacuum degree of the vacuum chamber is better than 10 -4 Pa, and the growth rate is The preparation of the electron transport layer with a thickness of 20 nm to 40 nm is completed.

[0076] S106, a second metallic TaN electrode is prepared on the electron transport layer; wherein the thickness of the second metallic TaN electrode is less than 5 nm.

[0077] The second metallic TaN electrode in the embodiment of the application is prepared by using a magnetron reactive sputtering process, and specifically: first, the vacuum degree of the vacuum chamber is better than 10 -7Pa, so that nitrogen, argon passes through the gas flow meter into the vacuum chamber, the argon flow is 50sccm-100sccm, the nitrogen flow is 10sccm-50sccm, the vacuum chamber temperature is set to 20-100℃, the direct current source power is 100W-200W when sputtering, and finally a second metallic TaN electrode with a thickness of less than 5nm is prepared on the electron transport layer, and more preferably a second metallic TaN electrode with a thickness of 2nm-5nm is prepared on the electron transport layer.

[0078] S107, partially oxidizing the second metallic TaN electrode in situ to prepare a TaON passivation layer around the second metallic TaN electrode.

[0079] The embodiment of the present application provides a scheme, which adopts a plasma treatment process, partially oxidizes the second metallic TaN electrode in situ to prepare a TaON passivation layer with a thickness of 2nm-5nm around the second metallic TaN electrode. More specifically: the plasma treatment is adopted, nitrogen plasma is generated in a specific area, and oxygen or an oxidant is introduced at the same time, active oxygen species in the plasma will react with nitride, promote local in-situ oxidation, and prepare a TaON passivation layer with a thickness of 2nm-5nm around the second metallic TaN electrode.

[0080] The embodiment of the present application can also adopt other processes, such as a thermal oxidation process, to prepare the TaON passivation layer. It can be seen that the scheme of directly generating a TaON passivation layer by locally oxidizing the second metallic TaN electrode in situ simplifies the preparation process, can improve production efficiency, and reduces cost.

[0081] S108, preparing an anti-reflection layer on the second metallic TaN electrode and the TaON passivation layer.

[0082] The embodiment of the present application adopts a thermal evaporation process to deposit a MgF2 anti-reflection layer with a thickness of 30nm-120nm on the second metallic TaN electrode and the TaON passivation layer, the vacuum degree of the vacuum chamber is better than 10 -4 Pa, the growth rate is

[0083] The third aspect, please see Figure 6 The embodiment of the present application provides a preparation method of a perovskite solar cell for near space application, and the preparation method comprises the following steps:

[0084] S201, selecting a transparent PI substrate and pretreating the PI substrate;

[0085] S202, preparing an anti-reflection layer on the pretreated PI substrate;

[0086] S203, preparing a first metallic TaN electrode on the anti-reflection layer; wherein the thickness of the first metallic TaN electrode is less than 5nm;

[0087] S204, in-situ oxidizing part of the first metallic TaN electrode to prepare a TaON passivation layer surrounding the first metallic TaN electrode;

[0088] S205, preparing a hole transport layer on the TaON passivation layer and the first metallic TaN electrode;

[0089] S206, preparing a perovskite light-absorbing layer on the hole transport layer;

[0090] S207, preparing an electron transport layer on the perovskite light-absorbing layer;

[0091] S208, preparing a second metallic TaN electrode on the electron transport layer; wherein the thickness of the second metallic TaN electrode is greater than 50nm.

[0092] S203, preparing a first metallic TaN electrode on the anti-reflection layer, comprising:

[0093] S203, preparing a first metallic TaN electrode on the anti-reflection layer, comprising:

[0094] S208, preparing a second metallic TaN electrode on the electron transport layer, comprising:

[0095] S208, preparing a second metallic TaN electrode on the electron transport layer, comprising:

[0096] S204, in-situ oxidizing part of the first metallic TaN electrode to prepare a TaON passivation layer surrounding the first metallic TaN electrode, comprising:

[0097] S204, in-situ oxidizing part of the first metallic TaN electrode to prepare a TaON passivation layer surrounding the first metallic TaN electrode, comprising:

[0098] The specific implementation of steps S201-S208 of the embodiment of the application is referred to S101-S108, and the difference is that S101-S108 correspond to the detailed preparation process of the structure shown in Figure 2 The specific implementation of steps S201-S208 of the embodiment of the application is referred to S101-S108, and the difference is that S101-S108 correspond to the detailed preparation process of the structure shown in Figure 3 The specific implementation of steps S201-S208 of the embodiment of the application is referred to S101-S108, and the difference is that S101-S108 correspond to the detailed preparation process of the structure shown in

[0099] For the method embodiments of the second aspect and the third aspect, since they are basically similar to the device embodiments of the first aspect, the description is relatively simple, and the relevant parts are referred to the part of the description of the device embodiments of the first aspect.

[0100] In the description of the present application, it should be understood that the terms "first", "second" are used only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically limited.

[0101] Although the present application is described herein in conjunction with various embodiments, other variations of the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a study of the drawings, the disclosure and the appended claims. In the description, the word "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality. Recitation of measures in mutually different embodiments does not indicate that these measures cannot be combined to produce good results.

[0102] The above is a further detailed description of the present application in conjunction with specific preferred embodiments, and cannot be considered as limiting the specific implementation of the present application to these descriptions. For those skilled in the art to which the present application belongs, without departing from the concept of the present application, a number of simple deductions or substitutions can be made, which should be considered as falling within the protection scope of the present application.

Claims

1. A perovskite solar cell for near space applications, characterized in that, The perovskite solar cell comprises, from bottom to top, a PI substrate, a first metallic TaN electrode, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a second metallic TaN electrode. When the PI substrate is an opaque substrate, a TaON passivation layer is arranged around the second metallic TaN electrode, and an anti-reflection layer is arranged on the second metallic TaN electrode and the TaON passivation layer; in this case, the thickness of the first metallic TaN electrode is required to be greater than 50 nm, and the thickness of the second metallic TaN electrode is required to be less than 5 nm; wherein the TaON passivation layer is obtained by in-situ oxidation of part of the second metallic TaN electrode. When the PI substrate is a transparent substrate, a TaON passivation layer is arranged around the first metallic TaN electrode, and an anti-reflection layer is arranged between the PI substrate and the first metallic TaN electrode and the TaON passivation layer; in this case, the thickness of the first metallic TaN electrode is required to be less than 5 nm, and the thickness of the second metallic TaN electrode is required to be greater than 50 nm; wherein the TaON passivation layer is obtained by in-situ oxidation of part of the first metallic TaN electrode.

2. The perovskite solar cell for near space applications according to claim 1, characterized in that, When the PI substrate is an opaque substrate, the thickness of the first metallic TaN electrode is 50 nm to 100 nm, and the thickness of the second metallic TaN electrode is 2 nm to 5 nm. When the PI substrate is a transparent substrate, the thickness of the first metallic TaN electrode is 2 nm to 5 nm, and the thickness of the second metallic TaN electrode is 50 nm to 100 nm.

3. The perovskite solar cell for near space applications according to claim 1, wherein, The thickness of the TaON passivation layer is 2 nm to 5 nm.

4. A method for preparing a perovskite solar cell for near space applications, characterized by, The preparation method comprises: selecting an opaque PI substrate and pretreating the PI substrate; preparing a first metallic TaN electrode on the pretreated PI substrate; wherein the thickness of the first metallic TaN electrode is greater than 50 nm; preparing a hole transport layer on the first metallic TaN electrode; preparing a perovskite light-absorbing layer on the hole transport layer; preparing an electron transport layer on the perovskite light-absorbing layer; preparing a second metallic TaN electrode on the electron transport layer; wherein the thickness of the second metallic TaN electrode is less than 5 nm; in-situ oxidizing part of the second metallic TaN electrode to prepare a TaON passivation layer around the second metallic TaN electrode; preparing an anti-reflection layer on the second metallic TaN electrode and the TaON passivation layer.

5. The method of claim 4, wherein the method is performed in a clean room. Preparation of a first metallic TaN electrode on a pretreated PI substrate comprises: using a magnetron reactive sputtering process to prepare a first metallic TaN electrode with a thickness of 50 nm to 100 nm on the pretreated PI substrate; Preparation of a second metallic TaN electrode on the electron transport layer comprises: using a magnetron reactive sputtering process to prepare a second metallic TaN electrode with a thickness of 2 nm to 5 nm on the electron transport layer.

6. The method of claim 4, wherein the method is characterized by: In-situ oxidation of part of the second metallic TaN electrode to prepare a TaON passivation layer around the second metallic TaN electrode comprises: Part of the second metallic TaN electrode is in-situ oxidized by a plasma treatment process to prepare a TaON passivation layer with a thickness of 2-5 nm around the second metallic TaN electrode.

7. A method for preparing a perovskite solar cell for near space applications, characterized in that, The preparation method comprises: a transparent PI substrate is selected and pretreated; an anti-reflection layer is prepared on the pretreated PI substrate; a first metallic TaN electrode is prepared on the anti-reflection layer; wherein the thickness of the first metallic TaN electrode is less than 5 nm; part of the first metallic TaN electrode is in-situ oxidized to prepare a TaON passivation layer around the first metallic TaN electrode; a hole transport layer is prepared on the TaON passivation layer and the first metallic TaN electrode; a perovskite light-absorbing layer is prepared on the hole transport layer; an electron transport layer is prepared on the perovskite light-absorbing layer; a second metallic TaN electrode is prepared on the electron transport layer; wherein the thickness of the second metallic TaN electrode is greater than 50 nm.

8. The method of claim 7, wherein the method is performed in a clean room. The first metallic TaN electrode prepared on the anti-reflection layer comprises: a first metallic TaN electrode with a thickness of 2-5 nm is prepared on the anti-reflection layer by a magnetron reactive sputtering process; The second metallic TaN electrode prepared on the electron transport layer comprises: a second metallic TaN electrode with a thickness of 50-100 nm is prepared on the electron transport layer by a magnetron reactive sputtering process.

9. The method of claim 7, wherein the method is characterized by: Part of the first metallic TaN electrode is in-situ oxidized to prepare a TaON passivation layer around the first metallic TaN electrode, comprising: Part of the first metallic TaN electrode is in-situ oxidized to prepare a TaON passivation layer with a thickness of 2-5 nm around the first metallic TaN electrode by a plasma treatment process.

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