Display device

Abstract

A display device is provided. The display device includes a substrate including an emission area and a non-emission area, a thin film transistor layer positioned on the substrate, a touch buffer layer positioned on the thin film transistor layer, a connection electrode positioned on the touch buffer layer, a touch insulating layer positioned on the connection electrode, a first electrode positioned on the touch insulating layer and overlapping with the non-emission region, and a first touch sacrificial layer positioned between the touch insulating layer and the first electrode, in which the first touch sacrificial layer does not overlap with the emission region and is positioned in an island shape while overlapping with the non-emission region, and an inclination angle formed between the touch insulating layer and a side surface of the first touch sacrificial layer has an acute angle.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and all benefits derived from Korean Patent Application No. 10-2023-0107175 filed in the Korean Intellectual Property Office on August 16, 2023, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure relates to a display device. Background Art

[0004] With the development of the information society, more and more requirements are put forward for display devices for displaying images in various ways. For example, display devices are used in various electronic devices such as smart phones, digital cameras, laptop computers, navigation devices, and smart TVs. The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, and an organic light emitting display device. Among the flat panel display devices, a self-luminous display device including a light emitting element capable of emitting light by itself can display an image without a backlight unit that provides light to a display panel. Summary of the invention

[0005] Aspects of the present disclosure provide a display device including a low-resistance wiring capable of high-resolution and high-speed driving.

[0006] However, aspects of the present disclosure are not limited to the aspects set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0007] The display device includes a substrate including an emission area and a non-emission area, a thin film transistor layer positioned on the substrate, a touch buffer layer positioned on the thin film transistor layer, a connecting electrode positioned on the touch buffer layer, a touch insulating layer positioned on the connecting electrode, a first electrode positioned on the touch insulating layer and overlapping the non-emission area, and a first touch sacrificial layer positioned between the touch insulating layer and the first electrode, wherein the first touch sacrificial layer does not overlap with the emission area and is positioned in an island shape while overlapping the non-emission area, and an inclination angle formed between the side surfaces of the touch insulating layer and the first touch sacrificial layer has an acute angle.

[0008] The display device may further include a touch protection layer positioned on the first electrode, wherein a side surface of the first touch sacrificial layer may contact the touch protection layer.

[0009] The first touch sacrificial layer may further include a first surface facing the touch insulating layer and a second surface facing the first electrode, the first surface may contact the touch insulating layer, and the second surface may contact the first electrode.

[0010] The first touch sacrificial layer may be at least one selected from the group consisting of silicon nitride, silicon oxynitride, and silicon oxide.

[0011] The first electrode may include at least one conductive layer, and the first electrode includes copper.

[0012] The first electrode may completely overlap the first touch sacrificial layer in a plan view, and the first touch sacrificial layer completely overlaps the touch insulating layer in a plan view.

[0013] In a plan view, the first electrode and the first touch sacrificial layer may have a mesh shape to expose the emission area.

[0014] The display device may further include a second electrode positioned on the touch insulating layer in the non-emission region and spaced apart from the first electrode, with the emission region interposed between the second electrode and the first electrode, wherein the second electrode is electrically connected to the connection electrode through the touch contact hole.

[0015] The first touch sacrificial layer may include a first portion overlapping the first electrode and a second portion overlapping the second electrode, and the second portion of the first touch sacrificial layer has an island shape between the second electrode and the touch insulating layer.

[0016] The second portion of the first touch sacrificial layer may completely surround the touch contact hole in a plan view.

[0017] The second portion may not be positioned on the touch contact hole.

[0018] The display device may further include a second touch sacrificial layer positioned between the touch buffer layer and the connecting electrode, wherein the second touch sacrificial layer may contact the touch buffer layer and the connecting electrode, the second touch sacrificial layer may have an island shape while overlapping the connecting electrode, and an inclination angle formed between the side surfaces of the touch buffer layer and the second touch sacrificial layer may have an acute angle.

[0019] The connection electrode may completely overlap the second touch sacrificial layer in a plan view, and the second touch sacrificial layer may completely overlap the touch buffer layer in a plan view.

[0020] The thin film transistor layer may include a first buffer layer, a third electrode positioned on the first buffer layer, and a first sacrificial layer positioned between the first buffer layer and the third electrode, wherein an inclination angle formed between side surfaces of the first buffer layer and the first sacrificial layer may have an acute angle.

[0021] The first sacrificial layer may have an island shape while overlapping the third electrode.

[0022] The display device includes a substrate including an emission area and a non-emission area, a thin film transistor layer positioned on the substrate, a touch buffer layer positioned on the thin film transistor layer, a connecting electrode positioned on the touch buffer layer, a touch insulating layer positioned on the connecting electrode, a first electrode positioned on the touch insulating layer and overlapping the non-emission area, a touch protection layer positioned on the first electrode, and a first touch sacrificial layer positioned between the touch insulating layer and the first electrode, wherein the first touch sacrificial layer includes a first portion overlapping the emission area and the non-emission area and a second portion overlapping the first electrode and protruding toward the first electrode.

[0023] A second portion of the first touch sacrificial layer may contact the first electrode.

[0024] The second portion may include a plurality of side surfaces facing the touch protection layer, and an inclination angle formed between a side surface of the second portion of the first touch sacrificial layer and the touch insulation layer may have an acute angle.

[0025] The display device may further include a second electrode, which is positioned on the touch insulating layer in the non-emitting area and is separated from the first electrode, and the emitting area is between the second electrode and the first electrode, wherein the first touch sacrificial layer also includes a third portion overlapping the second electrode and protruding toward the second electrode, and the inclination angle formed between the side surface of the third portion facing the touch protection layer and the touch insulating layer may have an acute angle.

[0026] The second portion and the third portion overlap the non-emission region and may be spaced apart from each other, with the emission region interposed between the second portion and the third portion, and the second portion and the third portion are connected by the first portion.

[0027] A display device according to one embodiment may provide a metal electrode capable of realizing a high-resolution product by providing an inorganic film having a low film density under the metal electrode.

[0028] However, the effects according to the embodiments of the present disclosure are not limited to those exemplified above, and various other effects are incorporated herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects and features of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0030] Figure 1 is a schematic perspective view of an electronic device according to one embodiment;

[0031] Figure 2 is a perspective view showing a display device included in an electronic device according to one embodiment;

[0032] Figure 3 It is shown Figure 2 A cross-sectional view of a schematic side view of a display device;

[0033] Figure 4 is a plan view showing a display layer of a display device according to an embodiment;

[0034] Figure 5 is a plan view showing a touch sensor layer of a display device according to one embodiment;

[0035] Figure 6 yes Figure 5 an enlarged plan view of area "A";

[0036] Figure 7 yes Figure 6 an enlarged plan view of a portion “T1”;

[0037] Figure 8 is shown along Figure 7 A cross-sectional view of a schematic cross section taken along line X1-X1';

[0038] Fig. 9 yes Figure 8 an enlarged cross-sectional view of a portion “T3”;

[0039] Fig.10 and Fig.11 is based on Fig. 9 An enlarged cross-sectional view of a sensing electrode of a display device according to another embodiment of the present invention;

[0040] Fig.12 yes Figure 8 an enlarged plan view of a portion “T3”;

[0041] Fig.13 yes Figure 8 an enlarged cross-sectional view of a portion “T5”;

[0042] Fig.14 yes Figure 8 an enlarged cross-sectional view of a portion “T7”;

[0043] Fig.15 According to another embodiment, Figure 7 A cross-sectional view of the display panel taken along line X1-X1';

[0044] Fig.16 yes Fig.15 an enlarged cross-sectional view of a portion “Q3”;

[0045] Fig.17 yes Fig.15 an enlarged cross-sectional view of a portion “Q5”;

[0046] Fig.18 yes Fig.17 An enlarged cross-sectional view of a driving electrode;

[0047] Fig.19 yes Fig.15 an enlarged cross-sectional view of portion “Q7” of FIG.

[0048] Fig. 20 yes Fig.15 An enlarged plan view of portion “Q3”. DETAILED DESCRIPTION

[0049] For the simplicity and clarity of illustration, the elements in the drawings are not necessarily drawn to scale. The same reference numerals in different drawings represent the same or similar elements, and thus perform similar functions. In addition, for the simplicity of description, the description and details of known steps and elements are omitted. In addition, in the following detailed description of the present disclosure, many specific details are set forth in order to provide a comprehensive understanding of the present disclosure. However, it will be understood that the present disclosure can be practiced without these specific details. In other cases, known methods, procedures, components and circuits are not described in detail to avoid unnecessary confusion of various aspects of the present disclosure. The examples of various embodiments are further shown and described below. It will be understood that the description herein is not intended to limit the claims to the specific embodiments described. On the contrary, it is intended to cover substitutions, modifications and equivalents that may be included in the spirit and scope of the present disclosure as defined by the appended claims.

[0050] The shapes, sizes, percentages, angles, numbers, etc. disclosed in the drawings for describing the embodiments of the present disclosure are illustrative, and the present disclosure is not limited thereto. The same reference numerals refer to the same elements throughout this document.

[0051] The terms used herein are only for the purpose of describing specific embodiments, and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, the singular formations "a" and "an" as used herein are intended to also include plural formations. It will also be understood that the terms "comprises", "comprising", "includes" and "including", when used in this specification, illustrate the existence of stated features, integers, operations, elements and / or parts, but do not exclude the existence or addition of one or more other features, integers, operations, elements, parts and / or parts thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. A statement such as "at least one" after a column of elements may modify the entire column of elements, and may not modify the individual elements in the column. When referring to "C to D", unless otherwise stated, this means containing C to containing D.

[0052] It will be understood that although the terms "first", "second", and "third", etc., may be used herein to describe various elements, components, regions, layers, and / or portions, these elements, components, regions, layers, and / or portions should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, or portion from another element, component, region, layer, or portion. Therefore, the first element, first component, first region, first layer, or first portion discussed below can be referred to as a second element, second component, second region, second layer, or second portion without departing from the spirit and scope of the present disclosure.

[0053] Furthermore, it will also be understood that when a first element or layer is referred to as being "on" or "beneath" a second element or layer, the first element may be disposed directly on or under the second element, or may be disposed indirectly on or under the second element with a third element or layer disposed between the first element or layer and the second element or layer. It will be understood that when an element or layer is referred to as being "connected to" or "coupled to" another element or layer, it may be directly on, directly connected to or coupled to, or there may be one or more intervening elements or layers. Furthermore, it will also be understood that when an element or layer is referred to as being "between" two elements or layers, it may be the only element or layer between the two elements or layers, or there may also be one or more intervening elements or layers.

[0054] In addition, as used herein, when a layer, film, zone, plate or the like is arranged "on" another layer, film, zone, plate or the like or arranged "on top" of another layer, film, zone, plate or the like, the former may directly contact the latter, or another layer, film, zone, plate or the like may be arranged between the former and the latter. As used herein, when a layer, film, zone, plate or the like is directly arranged "on" another layer, film, zone, plate or the like or arranged "on top" of another layer, film, zone, plate or the like, the former directly contacts the latter, and another layer, film, zone, plate or the like is not arranged between the former and the latter. In addition, as used herein, when a layer, film, zone, plate or the like is arranged "below" or "under" another layer, film, zone, plate or the like, the former may directly contact the latter, or another layer, film, zone, plate or the like may be arranged between the former and the latter. As used herein, when a layer, film, region, plate, or the like is disposed directly “under” or “beneath” another layer, film, region, plate, or the like, the former is in direct contact with the latter, and another layer, film, region, plate, or the like is not disposed between the former and the latter.

[0055] Unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as those commonly understood by those of ordinary skill in the art to which the inventive concept belongs. It will also be understood that, unless explicitly defined as such herein, terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and will not be interpreted in an idealized or overly formal sense.

[0056] In one example, when a certain embodiment can be implemented differently, the functions or operations described in a specific block can occur in a different order than the order described in the flow chart. For example, two consecutive blocks can actually run simultaneously. Depending on the related functions or operations, the blocks can run in reverse order.

[0057] In descriptions of temporal relationships, for example, a temporal precedence relationship between two events (such as "after," "subsequently," "before," etc.), another event may occur in between, unless "directly after," "directly subsequent," or "directly before" is indicated.

[0058] The features of various embodiments of the present disclosure may be combined with each other in part or in whole, and may be technically associated with each other or operate with each other. The embodiments may be implemented independently of each other, and may be implemented together in an associated relationship.

[0059] Spatially relative terms, such as "beneath," "below," "lower," "under," "above," "upper," and the like, may be used herein for convenience of explanation to describe the relationship of one element or feature to another element or feature as shown in the figures. It will be understood that in addition to the orientations depicted in the figures, the spatially relative terms are intended to also cover different orientations of the device in use or operation. For example, when the device in the accompanying drawings is turned over, the elements described as being "below" or "beneath" or "under" other elements or features will subsequently be oriented to be "above" other elements or features. Therefore, the exemplary terms "below" and "under" may cover both the above and below orientations. The device may be oriented in other ways (e.g., rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0060] Hereinafter, specific embodiments will be described with reference to the accompanying drawings.

[0061] Figure 1 is a schematic perspective view of an electronic device 1 according to one embodiment.

[0062] Reference Figure 1 , the electronic device 1 displays a moving image or a still image. The electronic device 1 may refer to any electronic device that provides a display screen. Examples of the electronic device 1 may include a television, a laptop computer, a monitor, a billboard, an IoT device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, a video camera, and the like that provide a display screen.

[0063] exist Figure 1 A first direction (X-axis direction), a second direction (Y-axis direction) and a third direction (Z-axis direction) are defined in the figure. The first direction (X-axis direction) and the second direction (Y-axis direction) may be perpendicular to each other, the first direction (X-axis direction) and the third direction (Z-axis direction) may be perpendicular to each other, and the second direction (Y-axis direction) and the third direction (Z-axis direction) may be perpendicular to each other. It can be understood that the first direction (X-axis direction) refers to the horizontal direction in the drawings, the second direction (Y-axis direction) refers to the vertical direction in the drawings, and the third direction (Z-axis direction) refers to the up and down direction (i.e., thickness direction) in the drawings. In the following description, unless otherwise stated, "direction" may refer to two directions extending along the direction. In addition, when it is necessary to distinguish between two "directions" extending on both sides, one side will be referred to as "one side in the direction", and the other side will be referred to as "the other side in the direction". Refer to Figure 1 , a direction indicated by an arrow is referred to as one side, and the direction opposite thereto is referred to as the other side.

[0064] In the following, for simplicity of description, when referring to the surface of the electronic device 1 or each component constituting the electronic device 1, one surface displaying an image is referred to as the top surface, and the surface opposite to the one surface is referred to as the bottom surface. However, the present disclosure is not limited thereto, and the top surface and the bottom surface may be referred to as the front surface and the rear surface, respectively, or may also be referred to as the first surface and the second surface, respectively. In addition, when describing the relative position of each of the components of the electronic device 1, one side of the third direction (Z-axis direction) may be referred to as the upper side, and the other side of the third direction (Z-axis direction) may be referred to as the lower side.

[0065] The electronic device 1 may include Figure 2 A display device 10 providing a display screen is provided in the embodiment of the present invention. Examples of the display device may include an inorganic light emitting diode display device, an organic light emitting display device (e.g., an organic light emitting diode display device), a quantum dot light emitting display device, a plasma display device, and a field emission display device. In the following description, an organic light emitting diode display device is exemplified as a case where the display device is applied, but the present disclosure is not limited thereto, and other display devices may be applied within the same technical spirit.

[0066] The shape of the electronic device 1 may be modified in various ways. For example, the electronic device 1 may have a shape such as a rectangular shape elongated in the horizontal direction, a rectangular shape elongated in the vertical direction, a square shape, a quadrilateral shape with rounded corners (vertices), other polygonal shapes, and a circular shape in a plan view. The shape of the display area DA of the electronic device 1 may also be similar to the overall shape of the electronic device 1. Figure 1 The electronic device 1 is shown to have a rectangular shape elongated in the second direction (Y-axis direction).

[0067] The electronic device 1 may include a display area DA and a non-display area NDA. The display area DA is an area capable of displaying an image, and the non-display area NDA is an area where an image is not displayed. The display area DA may also be referred to as an active area, and the non-display area NDA may also be referred to as a non-active area. The display area DA may substantially occupy the center of the electronic device 1.

[0068] Figure 2 is a perspective view showing a display device 10 included in an electronic device according to one embodiment.

[0069] Reference Figure 2 According to an embodiment of the electronic device 1 (for example, referring to Figure 1 ) may include a display device 10. The display device 10 may provide a screen for the electronic device 1. The display device 10 may have a planar shape similar to the shape of the electronic device 1. For example, in a plan view, the display device 10 may have a shape similar to a rectangular shape having short sides in a first direction (X-axis direction) and long sides in a second direction (Y-axis direction). The edges where the short sides in the first direction (X-axis direction) and the long sides in the second direction (Y-axis direction) intersect may be rounded to have a curvature, but the configuration of the display device 10 is not limited thereto and may be formed at a right angle. The planar shape of the display device 10 is not limited to a quadrilateral shape and may be formed in a shape similar to another polygonal shape, a circular shape, or an elliptical shape.

[0070] The display device 10 may include a display panel 100 , a display driver 200 , a circuit board 300 , and a touch driver 400 .

[0071] The display panel 100 may include a main area MA and a sub area SBA.

[0072] The main area MA may include a display area DA including pixels displaying an image and a non-display area NDA arranged around the display area DA.

[0073] The display area DA may emit light through a plurality of opening areas or a plurality of emission areas to be described later. For example, the display panel 100 may include a pixel circuit including a switching element, a pixel defining layer defining an emission area or an opening area, and a self-luminous element. For example, the self-luminous element may include an organic light-emitting diode (organic LED, OLED) including an organic light-emitting layer, a quantum dot LED including a quantum dot light-emitting layer, an inorganic LED including an inorganic semiconductor, and at least one of a micro-LED, but the configuration of the self-luminous element is not limited thereto. In the following figures, an organic light-emitting diode as a self-luminous element is shown by way of example.

[0074] The non-display area NDA may be an area outside the display area DA. The non-display area NDA may be an edge area of ​​the main area MA of the display panel 100. A gate driver (not shown) supplying a gate signal to a gate line and a fan-out line (not shown) connecting the display driver 200 to the display area DA may be arranged in the non-display area NDA.

[0075] The sub-area SBA may be an area extending from one side of the main area MA. The sub-area SBA may include a flexible material that can be bent, folded, or curled. For example, when the sub-area SBA is bent, the sub-area SBA may overlap with the main area MA in the thickness direction (e.g., the third direction (Z-axis direction)). The display driver 200 and the pad portion connected to the circuit board 300 may be arranged in the sub-area SBA. In another embodiment, the sub-area SBA may be omitted, and the display driver 200 and the pad portion may be positioned in the non-display area NDA.

[0076] The display driver 200 may output a signal and a voltage for driving the display panel 100. The display driver 200 may supply a data voltage to a data line. The display driver 200 may supply a power supply voltage to a power supply line, and may supply a gate control signal to a gate driver. The display driver 200 may be formed as an integrated circuit (IC) and may be mounted on the display panel 100 by a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method. For example, the display driver 200 may be arranged in a sub-area SBA and may overlap with the main area MA in a thickness direction by bending of the sub-area SBA. For another example, the display driver 200 may be mounted on a circuit board 300.

[0077] The circuit board 300 may be attached to the pad portion of the display panel 100 by using an anisotropic conductive film (ACF). Leads of the circuit board 300 may be electrically connected to the pad portion of the display panel 100. The circuit board 300 may be a flexible printed circuit board, a rigid printed circuit board, or a flexible film such as a chip on film.

[0078] The touch driver 400 may be mounted on the circuit board 300. The touch driver 400 may be connected to the touch sensing unit of the display panel 100. The touch driver 400 may supply a touch drive signal to a plurality of touch electrodes of the touch sensing unit, and may sense a change in capacitance between the plurality of touch electrodes. For example, the touch drive signal may be a pulse signal having a predetermined frequency. The touch driver 400 may calculate whether an input is made and input coordinates based on the change in capacitance between the plurality of touch electrodes. The touch driver 400 may be formed as an integrated circuit (IC).

[0079] Figure 3 It is shown Figure 2 1 is a cross-sectional view of a schematic side view of a display device 10 .

[0080] Reference Figure 3 , the display panel 100 may include a display layer DPL, a touch sensor layer 180 and a color filter layer 190. The display layer DPL may include a substrate 110, a thin film transistor layer 130, a light emitting element layer 150 and a thin film encapsulation layer 170.

[0081] The substrate 110 may be a base substrate or a base member. The substrate 110 may be a flexible substrate capable of bending, folding or curling. For example, the substrate 110 may include a polymer resin such as polyimide (PI), but is not limited thereto. In another embodiment, the substrate 110 may include a glass material or a metal material. The substrate 110 may include an area or region corresponding to an area or region of the display panel 100 (or a layer of the display panel 100). For example, the substrate 110 may include an emission region and a non-emission region corresponding to an emission region and a non-emission region of a pixel defining layer.

[0082] The thin film transistor layer 130 may be arranged on the substrate 110. The thin film transistor layer 130 may include a plurality of thin film transistors constituting a pixel circuit of a pixel. The thin film transistor layer 130 may also include a gate line, a data line, a power line, a gate control line, a fan-out line connecting the display driver 200 to the data line, and a lead connecting the display driver 200 to the pad portion. Each of the thin film transistors may include a semiconductor region, a source electrode, a drain electrode, and a gate electrode. For example, when a gate driver is formed on one side of a non-display area NDA of the display panel 100, the gate driver may include a thin film transistor.

[0083] The thin film transistor layer 130 may be positioned in the display area DA, the non-display area NDA, and the sub-area SBA. The thin film transistor, gate line, data line, and power line of each of the pixels of the thin film transistor layer 130 may be positioned in the display area DA. The gate control line and fan-out line of the thin film transistor layer 130 may be positioned in the non-display area NDA. The lead line of the thin film transistor layer 130 may be positioned in the sub-area SBA.

[0084] The light emitting element layer 150 may be positioned on the thin film transistor layer 130. The light emitting element layer 150 may include a plurality of light emitting elements each including a pixel electrode, a light emitting layer and a common electrode to emit light and a pixel defining layer defining pixels. The plurality of light emitting elements of the light emitting element layer 150 may be positioned in the display area DA.

[0085] In one embodiment, the light-emitting layer may be an organic light-emitting layer including an organic material. The light-emitting layer may include a hole transport layer, an organic light-emitting layer, and an electron transport layer. When the first electrode (e.g., a pixel electrode) receives a voltage through the thin film transistor of the thin film transistor layer 130 and the second electrode (e.g., a common electrode) receives a cathode voltage, holes and electrons may be transferred to the organic light-emitting layer through the hole transport layer and the electron transport layer, respectively, and may be combined with each other to emit light in the organic light-emitting layer.

[0086] In another embodiment, the light emitting element may include a quantum dot light emitting diode including a quantum dot light emitting layer, an inorganic light emitting diode including an inorganic semiconductor, or a micro light emitting diode.

[0087] The thin film encapsulation layer 170 may cover the top and side surfaces of the light emitting element layer 150 and may protect the light emitting element layer 150. The thin film encapsulation layer 170 may include at least one inorganic layer for encapsulating the light emitting element layer 150 and at least one organic layer.

[0088] The touch sensor layer 180 may be positioned on the thin film encapsulation layer 170. The touch sensor layer 180 may include a plurality of touch electrodes 350 (e.g., driving electrodes TE and sensing electrodes RE) for capacitively sensing a user's touch and touch lines connecting the plurality of touch electrodes to the touch driver 400. For example, the touch sensor layer 180 may sense the user's touch by using a mutual capacitance method or a self capacitance method.

[0089] In another embodiment, the touch sensor layer 180 may be positioned on a separate substrate disposed on the display layer DPL. In this case, the substrate supporting the touch sensor layer 180 may be a base member encapsulating the display layer DPL.

[0090] The color filter layer 190 may be positioned on the touch sensor layer 180. The color filter layer 190 may include a plurality of color filters respectively arranged in regions corresponding to the plurality of emission regions. Each of the color filters may selectively transmit light of a specific wavelength, and may block or absorb light of different wavelengths. The color filter layer 190 may absorb part of the light from outside the display device 10 to reduce reflected light due to external light. Therefore, the color filter layer 190 may prevent color distortion caused by reflection of external light.

[0091] Since the color filter layer 190 is directly disposed on the touch sensor layer 180, the display device 10 may not require a separate substrate for the color filter layer 190. Therefore, the thickness of the display device 10 may be reduced.

[0092] Figure 4 is a plan view showing a display layer DPL of a display device according to one embodiment.

[0093] Reference Figure 4 , the display layer DPL may include a display area DA and a non-display area NDA.

[0094] The display area DA may be located on the display panel 100 (eg, referring to Figure 3 ). Some portions of a plurality of pixels PX, a plurality of gate lines GL, a plurality of data lines DL, and a plurality of power lines VL may be positioned in the display area DA. Each of the plurality of pixels PX may be defined as a minimum unit for emitting light.

[0095] The plurality of gate lines GL may supply gate signals received from the gate driver 210 to the plurality of pixels PX. The plurality of gate lines GL may extend in a first direction (X-axis direction) and may be spaced apart from each other in a second direction (Y-axis direction) intersecting the first direction (X-axis direction).

[0096] The plurality of data lines DL may supply data voltages received from the display driver 200 to the plurality of pixels PX. The plurality of data lines DL may extend in the second direction (Y-axis direction) and may be spaced apart from each other in the first direction (X-axis direction).

[0097] The plurality of power lines VL may supply a power voltage received from the display driver 200 to the plurality of pixels PX. Here, the power voltage may be at least one of a driving voltage, an initialization voltage, and a reference voltage. The plurality of power lines VL may extend in the second direction (Y-axis direction) and may be spaced apart from each other in the first direction (X-axis direction).

[0098] The non-display area NDA may surround the display area DA. A plurality of power lines VL, a gate driver 210, fan-out lines FOL, and gate control lines GCL may be positioned in the non-display area NDA. The gate driver 210 may generate a plurality of gate signals based on the gate control signal, and may sequentially supply the plurality of gate signals to the plurality of gate lines GL according to a set order.

[0099] The fan-out line FOL may extend from the display driver 200 to the display area DA. The fan-out line FOL may supply a data voltage received from the display driver 200 to the plurality of data lines DL.

[0100] The gate control line GCL may extend from the display driver 200 to the gate driver 210. The gate control line GCL may supply a gate control signal received from the display driver 200 to the gate driver 210. In the drawings, it is shown that the gate driver 210 is arranged only in the non-display area NDA arranged on the left side of the display area DA, but is not limited thereto. In some embodiments, the display device 10 (e.g., referring to Figure 3 ) may include a plurality of gate drivers 210 respectively arranged on the left and right sides of the display area DA.

[0101] The display driver 200 and a plurality of display pads PD are arranged in the sub-area SBA.

[0102] The display driver 200 may output signals and voltages for driving the display panel 100 to the fan-out lines FOL. The display driver 200 may supply data voltages to the data lines DL through the fan-out lines FOL. The data voltages may be supplied to a plurality of pixels PX, and the brightness of the plurality of pixels PX may be controlled by the data voltages. The display driver 200 may supply gate control signals to the gate driver 210 through the gate control lines GCL.

[0103] A plurality of display pads PD may be provided through a circuit board 300 (eg, referring to Figure 3 ) is connected to a graphics system. A plurality of display pads PD may be connected to the circuit board 300 to receive digital video data, and may supply the digital video data to the display driver 200.

[0104] Figure 5 FIG. 1 is a diagram showing a touch sensor layer 180 (eg, referring to FIG. 1 ) of a display device 10 according to an embodiment. Figure 3 )’s plan view.

[0105] Reference Figure 5 , the touch sensor layer 180 of the display device 10 may include a touch sensing area TSA for sensing a user's touch and a touch peripheral area TPA arranged around the touch sensing area TSA. The touch sensing area TSA may be connected to Figures 1 to 4 The display area DA overlaps with the touch peripheral area TPA. Figures 1 to 4 The non-display area NDA overlaps.

[0106] In some embodiments, the touch sensor layer 180 may include a plurality of drive electrodes TE, a plurality of sense electrodes RE, and a plurality of dummy electrodes DM positioned in a touch sensing area TSA and a plurality of drive lines TL, a plurality of sense lines RL, a plurality of drive pads TP, and a plurality of sense pads RP positioned in a touch peripheral area TPA.

[0107] The plurality of driving electrodes TE may be positioned in the first direction (X-axis direction). For example, the plurality of driving electrodes TE may be positioned from the left side to the right side of the touch sensing area TSA. The plurality of adjacent driving electrodes TE may be electrically separated from each other, and the plurality of driving electrodes TE arranged separately may be connected to each other through a first connection electrode BE1 (for example, see FIG. Figure 6 ) are connected to each other. The plurality of driving electrodes TE may be connected to the driving lines TL corresponding thereto at the lower side of the touch sensing area TSA facing the sub-area SBA. The plurality of driving lines TL may be positioned in the touch peripheral area TPA.

[0108] The plurality of sensing electrodes RE may be positioned in the second direction (Y-axis direction). For example, the plurality of sensing electrodes RE may be positioned from the lower side to the upper side of the touch sensing area TSA. The plurality of adjacent sensing electrodes RE may be electrically separated from each other, and the plurality of sensing electrodes RE disposed separately may be connected to each other through a second connection electrode BE2 (for example, see FIG. Figure 6 ) are connected to each other. The plurality of sensing electrodes RE may be connected to the corresponding sensing lines RL on the left or right side of the touch sensing area TSA. The plurality of sensing lines RL may be positioned in the touch peripheral area TPA.

[0109] The plurality of dummy electrodes DM may be surrounded by the driving electrode TE or the sensing electrode RE. Each of the plurality of dummy electrodes DM may be electrically separated from the driving electrode TE and the sensing electrode RE. Each of the plurality of dummy electrodes DM may be positioned to be spaced apart from the driving electrode TE or the sensing electrode RE. Each of the plurality of dummy electrodes DM may be electrically floating.

[0110] The plurality of electrodes included in the touch sensor layer 180 (i.e., the driving electrode TE, the sensing electrode RE, the first connection electrode BE1, and the second connection electrode BE2) may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof.

[0111] Although each of the plurality of driving electrodes TE, each of the plurality of sensing electrodes RE, and each of the plurality of dummy electrodes DM Figure 5 , but the present disclosure is not limited thereto. For example, each of the plurality of driving electrodes TE, each of the plurality of sensing electrodes RE, and each of the plurality of dummy electrodes DM may have a rectangular shape other than a rhombus, a polygonal shape other than a rectangle, a circular shape, or an elliptical shape.

[0112] A plurality of driving pads TP may be positioned in the sub-area SBA and may be connected to the driving lines TL corresponding thereto. A plurality of sensing pads RP may be positioned in the sub-area SBA and may be connected to the corresponding sensing lines RL. The plurality of driving pads TP and the plurality of sensing pads RP may be electrically connected to the circuit board 300 through a conductive adhesive member such as an anisotropic conductive film.

[0113] Figure 6 yes Figure 5 An enlarged plan view of area "A".

[0114] Reference Figure 6 , including in the touch sensor layer 180 (eg, referring to Figure 3 ) in the driving electrode TE, the sensing electrode RE, the first connection electrode BE1 and the second connection electrode BE2 may be formed in a mesh shape. As described above, when the touch sensor layer 180 is directly formed on the thin film encapsulation layer 170 (for example, referring to Figure 3 ) is formed on the light emitting element layer 150 (for example, referring to Figure 3 ) of the common electrode CE (for example, referring to Figure 8 ) and the driving electrode TE or the sensing electrode RE of the touch sensor layer 180 is short, so a very large parasitic capacitance may be formed between the common electrode CE of the light emitting element layer 150 and the driving electrode TE or the sensing electrode RE of the touch sensor layer 180. Therefore, in order to reduce such parasitic capacitance, it may be desirable to form the driving electrode TE and the sensing electrode RE as a grid-type electrode. Therefore, since the plurality of electrodes included in the touch sensor layer 180 are formed in a grid structure, they may not overlap with the plurality of emission areas EA1, EA2, and EA3. Therefore, the light emitted from the plurality of emission areas EA1, EA2, and EA3 may not be blocked by the plurality of electrodes included in the touch sensor layer 180, and thus the light transmittance may be improved.

[0115] In some embodiments, the plurality of second connection electrodes BE2 may be positioned on the same layer as the plurality of driving electrodes TE and the plurality of sensing electrodes RE (or at the same layer as the plurality of driving electrodes TE and the plurality of sensing electrodes RE). Therefore, the plurality of sensing electrodes RE adjacent in the first direction (X-axis direction) may be electrically connected to each other through the plurality of second connection electrodes BE2.

[0116] In some embodiments, the plurality of first connection electrodes BE1 may be positioned on (or at) a different layer from the plurality of driving electrodes TE and the plurality of sensing electrodes RE. Each of the plurality of first connection electrodes BE1 may have a bent portion. Figure 6 The plurality of first connection electrodes BE1 are illustrated as having a planar shape of an angle bracket (“<” or ”>”), but the present disclosure is not limited thereto.

[0117] Each of the plurality of first connection electrodes BE1 may overlap with the plurality of drive electrodes TE adjacent in the second direction (Y-axis direction) in the third direction (Z-axis direction). One side of the first connection electrode BE1 may be connected to any one of the drive electrodes TE arranged to be adjacent in the second direction (Y-axis direction) through the touch contact hole TCNT1. The other side of the first connection electrode BE1 may be connected to another drive electrode TE among the drive electrodes TE arranged to be adjacent in the second direction (Y-axis direction) through the touch contact hole TCNT1. Therefore, due to the plurality of first connection electrodes BE1, the plurality of drive electrodes TE and the plurality of sensing electrodes RE may be electrically separated from each other at the portions where they intersect. Therefore, mutual capacitance may be formed at each of the intersections between the plurality of drive electrodes TE and the plurality of sensing electrodes RE.

[0118] like Figure 6 As shown in , the emission areas EA1, EA2 and EA3 may be defined between electrodes having a grid shape. The emission areas EA1, EA2 and EA3 may include a first emission area EA1 that emits light of a first color, a second emission area EA2 that emits light of a second color, and a third emission area EA3 that emits light of a third color. Therefore, the pixel PX may include one first emission area EA1, two second emission areas EA2 and one third emission area EA3. For example, the first color may be red, the second color may be green, and the third color may be blue. The pixel PX may emit white light. In each of the plurality of pixels PX, the first emission area EA1 and the third emission area EA3 may be arranged adjacent to each other in a first direction (X-axis direction), and a plurality of second emission areas EA2 may be arranged adjacent to each other in a second direction (Y-axis direction).

[0119] Each of the first emission area EA1, the second emission area EA2, and the third emission area EA3 may have a circular shape in a plan view, but is not limited thereto. Each of the first emission area EA1, the second emission area EA2, and the third emission area EA3 may have a polygonal shape other than a quadrilateral shape, or an elliptical shape in a plan view. Figure 6 It is shown that the third emission area EA3 has the largest area and the second emission area EA2 has the smallest area, but the present disclosure is not limited thereto.

[0120] The non-emission area NLA may surround each of the first emission area EA1, the second emission area EA2, and the third emission area EA3. The pixel defining layer 151 (eg, referring to Figure 8 ) and a light-blocking layer BM (eg, referring to Figure 8 ) may overlap in the non-emission area NLA.

[0121] Figure 7 yes Figure 6 An enlarged plan view of portion “T1”.

[0122] Reference Figure 7 , touch sensor layer 180 (eg, referring to Figure 3 ) may include a touch sacrificial layer TSFL disposed under the sensing electrode RE and the driving electrode TE. The touch sacrificial layer TSFL may include a first touch sacrificial layer 182 (eg, referring to FIG. 1 ) overlapping the first connection electrode BE1 in a plan view. Figure 8 ) and a second touch sacrificial layer 184 (eg, referring to Figure 8 ). In a plan view, the first connection electrode BE1 may completely overlap the first touch sacrificial layer 182. In a plan view, the sensing electrode RE may overlap the first portion 184A of the second touch sacrificial layer 184 (eg, referring to Figure 8 ) completely overlaps, and the driving electrode TE may overlap with the second portion 184B (eg, refer to FIG. 1 ) of the second touch sacrificial layer 184 except for the region connected to the first connection electrode BE1. Figure 8 ) completely overlap.

[0123] In some embodiments, the touch sacrificial layer TSFL of the display device 10 may be formed in the same mesh shape as the sensing electrode RE and the driving electrode TE, and may expose the first emission area EA1, the second emission area EA2, and the third emission area EA3, but is not limited thereto. In another embodiment, the touch sacrificial layer TSFL may be formed on the entire surface while overlapping the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA.

[0124] The touch sacrificial layer TSFL included in the touch sensor layer 180 may reduce an etching rate of the sensing electrode RE and the driving electrode TE and the first connection electrode BE1 during a manufacturing process. This will be described in detail later.

[0125] Figure 8 is shown along Figure 7 A cross-sectional view of a schematic cross section taken along line X1-X1'.

[0126] Will refer to Figure 8 A cross-sectional structure of the display device 10 will be described.

[0127] Since the substrate 110 has been described above, a detailed description thereof will be omitted.

[0128] The thin film transistor layer 130 may include a first buffer layer 111, a first sacrificial layer 112, a lower metal layer BML, a second buffer layer 113, a thin film transistor TFT, a gate insulating layer 115, a second sacrificial layer 116, a first interlayer insulating layer 117, a second interlayer insulating layer 119, a first connection electrode CNE1, a first through hole layer 121, a second connection electrode CNE2 and a second through hole layer 123.

[0129] The first buffer layer 111 may be positioned on the substrate 110. The first buffer layer 111 may include an inorganic layer capable of preventing air or moisture from penetrating. For example, the first buffer layer 111 may include a plurality of inorganic layers alternately stacked. For example, the first buffer layer 111 may be formed as a multilayer in which one or more inorganic layers of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked.

[0130] The first sacrificial layer 112 may be positioned between the first buffer layer 111 and the lower metal layer BML. The first sacrificial layer 112 may be positioned to overlap with the lower metal layer BML and may be in contact with the lower metal layer BML. The first sacrificial layer 112 of the display device 10 may not be positioned anywhere except in an area overlapping with the lower metal layer BML. That is, the first sacrificial layer 112 may have an island shape while overlapping with the lower metal layer BML.

[0131] The first sacrificial layer 112 may include a material having a higher etching rate than that of the lower metal layer BML. In a wet etching process for forming the lower metal layer BML, the first sacrificial layer 112 may react with a hydrofluoric acid-based etchant to reduce lateral etching of the lower metal layer BML.

[0132] The first sacrificial layer 112 may include an inorganic film having a low film density. For example, the first sacrificial layer 112 may include silicon nitride, silicon oxynitride, or silicon oxide. However, the present disclosure is not limited thereto, and the first sacrificial layer 112 may include any inorganic film that reacts with a hydrofluoric acid-based etching solution to reduce the etching rate of the lower metal layer BML. Specifically, the film density of the first sacrificial layer 112 measured by an X-ray reflectometry (XRR) analyzer may be 2.2 g / cm 3 or smaller.

[0133] The lower metal layer BML may be positioned on the first sacrificial layer 112. The lower metal layer BML in the present embodiment may be a structure including copper (Cu), but is not limited thereto. Specifically, the lower metal layer BML may be formed as a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0134] The second buffer layer 113 may cover the first buffer layer 111 and the lower metal layer BML. The second buffer layer 113 may include an inorganic layer capable of preventing air or moisture from penetrating. For example, the second buffer layer 113 may include a plurality of inorganic layers alternately stacked. The second buffer layer 113 may include the same material as the first buffer layer 111.

[0135] The thin film transistor TFT may be positioned on the second buffer layer 113. The thin film transistor TFT may include an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE. The active layer ACT of the thin film transistor TFT includes polycrystalline silicon (e.g., low temperature polycrystalline silicon), single crystal silicon, amorphous silicon, or an oxide semiconductor. The active layer ACT overlapping the gate electrode GE in the third direction (Z-axis direction) which is the thickness direction of the substrate 110 may be defined as a channel region. The source electrode SE and the drain electrode DE which do not overlap the gate electrode GE in the third direction (Z-axis direction) may have conductivity by doping the silicon semiconductor or the oxide semiconductor with ions or impurities.

[0136] The gate insulating layer 115 may be positioned on the active layer ACT. The gate insulating layer 115 may cover the active layer ACT and the second buffer layer 113, and may insulate the active layer ACT from the gate electrode GE. The gate insulating layer 115 may be arranged to have a substantially constant thickness along the contour of the active layer ACT. The gate insulating layer 115 may include a first contact hole CNTH1 connecting the first connection electrode CNE1 to the drain electrode DE.

[0137] The gate insulating layer 115 may include an inorganic insulating material and may be formed in multiple layers. For example, the gate insulating layer 115 may be formed of an inorganic material such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer.

[0138] The second sacrificial layer 116 may be positioned between the gate insulating layer 115 and the gate electrode GE. The second sacrificial layer 116 may be positioned to overlap the gate electrode GE, and the second sacrificial layer 116 may be in contact with the gate electrode GE. The second sacrificial layer 116 of the display device 10 may not be positioned anywhere except for an area overlapping the gate electrode GE and / or a gate line connected to the gate electrode GE. That is, the second sacrificial layer 116 may have an island shape while overlapping the gate electrode GE.

[0139] The second sacrificial layer 116 may include a material having an etching rate higher than that of the gate electrode GE. In a wet etching process for forming the gate electrode GE, the second sacrificial layer 116 may react with a hydrofluoric acid-based etchant to reduce lateral etching of the gate electrode GE.

[0140] The second sacrificial layer 116 may include an inorganic film having a low film density. For example, the second sacrificial layer 116 may include silicon nitride, silicon oxynitride, or silicon oxide. However, the present disclosure is not limited thereto, and the second sacrificial layer 116 may include any inorganic film that reacts with a hydrofluoric acid-based etching solution to reduce lateral etching of the gate electrode GE. Specifically, the film density of the second sacrificial layer 116 measured by an X-ray reflectometry (XRR) analyzer may be 2.2 g / cm 3 or smaller.

[0141] The gate electrode GE may be arranged on the second sacrificial layer 116. The gate electrode GE may overlap the active layer ACT, and the second sacrificial layer 116 and the gate insulating layer 115 are interposed between the gate electrode GE and the active layer ACT. The gate electrode GE may include a metal. The gate electrode GE in the present embodiment may have a structure including copper (Cu), but is not limited thereto. Specifically, the gate electrode GE may include at least one metal selected from a cluster consisting of molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu).

[0142] The first interlayer insulating layer 117 may be disposed on the gate electrode GE. The first interlayer insulating layer 117 may include an inorganic insulating material and may be formed in multiple layers. For example, the first interlayer insulating layer 117 may be formed of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer insulating layer 117 may include a first contact hole CNTH1 through which the first connection electrode CNE1 passes.

[0143] A capacitor electrode CAE may be arranged on the first interlayer insulating layer 117. The capacitor electrode CAE may overlap with the gate electrode GE of the thin film transistor TFT in the third direction (Z-axis direction). Since the first interlayer insulating layer 117 has a predetermined dielectric constant, a capacitor may be formed by the first interlayer insulating layer 117 arranged between the capacitor electrode CAE and the gate electrode GE. The capacitor electrode CAE may include a metal. For example, the capacitor electrode CAE may include at least one metal selected from a group consisting of molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W) and copper (Cu).

[0144] The second interlayer insulating layer 119 may be positioned on the first interlayer insulating layer 117 and the capacitor electrode CAE. The second interlayer insulating layer 119 may include an inorganic insulating material and may be formed in multiple layers. For example, the second interlayer insulating layer 119 may be formed of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating layer 119 may include a first contact hole CNTH1 through which the first connection electrode CNE1 passes.

[0145] The first connection electrode CNE1 may be disposed on the second interlayer insulating layer 119. The first connection electrode CNE1 may electrically connect the drain electrode DE of the thin film transistor TFT to the second connection electrode CNE2. The first connection electrode CNE1 may be connected to the drain electrode DE of the thin film transistor TFT through a first contact hole CNTH1 formed in the first interlayer insulating layer 117, the second interlayer insulating layer 119, and the gate insulating layer 115.

[0146] The first through hole layer 121 may cover the first connection electrode CNE1 and the second interlayer insulating layer 119. The first through hole layer 121 may protect the thin film transistor TFT. The first through hole layer 121 may include an organic material. For example, the first through hole layer 121 may include an organic material such as acrylic resin, epoxy resin, phenol resin, polyamide resin, or polyimide resin. The first through hole layer 121 may include a second contact hole CNTH2 through which the second connection electrode CNE2 passes.

[0147] The second connection electrode CNE2 may be disposed on the first through hole layer 121. The second connection electrode CNE2 may electrically connect the first connection electrode CNE1 to the pixel electrode AE1 of the light emitting element ED1, the pixel electrode AE2 of the light emitting element ED2, and the pixel electrode AE3 of the light emitting element ED3. Here, the light emitting element ED2 and the pixel electrode AE2 may correspond to Figure 7 The second emission area EA2 in the Figure 8 The second connection electrode CNE2 may contact the first connection electrode CNE1 through a second contact hole CNTH2 formed in the first through hole layer 121 .

[0148] The second through hole layer 123 may be positioned on the second connection electrode CNE2 and the first through hole layer 121. The second through hole layer 123 may cover the second connection electrode CNE2 and the first through hole layer 121. The second through hole layer 123 may include an organic material. For example, the second through hole layer 123 may include an organic material such as acrylic resin, epoxy resin, phenol resin, polyamide resin, or polyimide resin. The second through hole layer 123 may include a third contact hole CNTH3 through which the pixel electrode AE1 of the light emitting element ED1, the pixel electrode AE2 of the light emitting element ED2, and the pixel electrode AE3 of the light emitting element ED3 pass.

[0149] The light emitting element layer 150 may be disposed on the thin film transistor layer 130. The light emitting element layer 150 may include light emitting elements ED1, ED2, and ED3, and a pixel defining layer 151.

[0150] The light-emitting elements ED1, ED2, and ED3 may include a first light-emitting element ED1, a second light-emitting element ED2, and a third light-emitting element ED3, which are arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3, respectively. Specifically, the first light-emitting element ED1 may be arranged in the first emission area EA1, the second light-emitting element ED2 may be arranged in the second emission area EA2, and the third light-emitting element ED3 may be arranged in the third emission area EA3. In addition, the first light-emitting element ED1 may include a first pixel electrode AE1, a first light-emitting layer EL1, and a common electrode CE, the second light-emitting element ED2 may include a second pixel electrode AE2, a second light-emitting layer EL2, and a common electrode CE, and the third light-emitting element ED3 may include a third pixel electrode AE3, a third light-emitting layer EL3, and a common electrode CE. For simplicity of description, the first light-emitting element ED1 and the third light-emitting element ED3 are shown and described in the drawings, but the second light-emitting element ED2 may also include the same structure and features as the first light-emitting element ED1 and the third light-emitting element ED3.

[0151] The first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 may be arranged on the second through hole layer 123 in the first emission area EA1, the second emission area EA2, and the third emission area EA3. The first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 may be arranged to cover the opening defined by the pixel defining layer 151. The first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 may be electrically connected to the drain electrode DE of the thin film transistor TFT through the first connection electrode CNE1 and the second connection electrode CNE2.

[0152] The first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 may be a metal having high conductivity. For example, the first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 may have a conductive layer formed by stacking a conductive layer such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), and indium oxide (In 2 O 3) and a reflective material layer such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca) or a mixture thereof. The layer with a high work function may be arranged above the reflective material layer and arranged closer to the first light emitting layer EL1, the second light emitting layer EL2, and the third light emitting layer EL3. For example, the first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 may have a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, and ITO / Ag / ITO, but are not limited thereto.

[0153] The pixel defining layer 151 may be used to define the first emission area EA1, the second emission area EA2, and the third emission area EA3. The pixel defining layer 151 may expose portions of the first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 on the second through-hole layer 123, and cover the edges of the first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3. The pixel defining layer 151 may include an organic material. For example, the pixel defining layer 151 may include an organic material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin. The pixel defining layer 151 may be arranged in the third contact hole CNTH3. That is, the third contact hole CNTH3 may be filled with the pixel defining layer 151.

[0154] The first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3 may be positioned on the first pixel electrode AE1 in the first emission area EA1, the second pixel electrode AE2 in the second emission area EA2, and the third pixel electrode AE3 in the third emission area EA3, respectively. The first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3 may include an organic material to emit light of a predetermined color. For example, the first light-emitting layer EL1, the second light-emitting layer EL2, and the third light-emitting layer EL3 may include a hole transport layer, an organic material layer, and an electron transport layer. The organic material layer may include a host and a dopant. The organic material layer may include a material that emits a predetermined light, and may be formed using a phosphorescent material or a fluorescent material.

[0155] The common electrode CE may be positioned on the first light emitting layer EL1, the second light emitting layer EL2, and the third light emitting layer EL3 and the pixel defining layer 151. The common electrode CE may be a common layer formed on the entire surface of the plurality of emission areas EA1, EA2, and EA3 and the pixel defining layer 151. The common electrode CE may include a transparent conductive material so that light generated in the first light emitting layer EL1, the second light emitting layer EL2, and the third light emitting layer EL3 may be emitted. The common electrode CE may receive a common voltage or a low potential voltage. When the first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 receive a voltage corresponding to the data voltage and the common electrode CE receives a low potential voltage, a potential difference is formed between the first pixel electrode AE1, the second pixel electrode AE2, and the third pixel electrode AE3 and the common electrode CE so that the first light emitting layer EL1, the second light emitting layer EL2, and the third light emitting layer EL3 may emit light.

[0156] The common electrode CE may be formed of a transparent conductive material (TCO) such as ITO or IZO capable of transmitting light or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of Mg and Ag. When the common electrode CE is formed of a semi-transmissive conductive material, light emission efficiency can be improved due to a microcavity effect.

[0157] A capping layer 159 may be disposed on the common electrode CE. The capping layer 159 may prevent the first light emitting element ED1, the second light emitting element ED2, and the third light emitting element ED3 from being damaged by external air. The capping layer 159 may include an inorganic material. For example, the capping layer 159 may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, or silicon oxynitride.

[0158] The thin film encapsulation layer 170 may be disposed on the light emitting element layer 150. The thin film encapsulation layer 170 may include at least one inorganic layer to prevent oxygen or moisture from penetrating into the light emitting element layer 150. In addition, the thin film encapsulation layer 170 may include at least one organic layer to protect the light emitting element layer 150 from foreign matter such as dust. The thin film encapsulation layer 170 may include a first encapsulation layer 171, a second encapsulation layer 173, and a third encapsulation layer 175. The first encapsulation layer 171 may be disposed on the common electrode CE, the second encapsulation layer 173 may be disposed on the first encapsulation layer 171, and the third encapsulation layer 175 may be disposed on the second encapsulation layer 173.

[0159] The first and third encapsulation layers 171 and 175 may be inorganic layers. For example, the first and third encapsulation layers 171 and 175 may be formed as a multilayer in which one or more inorganic layers of silicon nitride, silicon oxynitride, silicon oxide, titanium oxide, and aluminum oxide are alternately stacked.

[0160] The second encapsulation layer 173 may be an organic layer. For example, the second encapsulation layer 173 may include an organic material such as acrylic resin, epoxy resin, phenol resin, polyamide resin, or polyimide resin.

[0161] The touch sensor layer 180 may be disposed on the thin film encapsulation layer 170. The touch sensor layer 180 may include a touch buffer layer 181, a first touch sacrificial layer 182, a first connection electrode BE1, a touch insulating layer 183, a second touch sacrificial layer 184, a driving electrode TE and a sensing electrode RE, a second connection electrode BE2 (for example, refer to Figure 6 ), the dummy electrode DM (for example, refer to Figure 5 ) and a touch protection layer 185.

[0162] The touch buffer layer 181 may be disposed on the thin film encapsulation layer 170. The touch buffer layer 181 may include at least one inorganic layer. For example, the touch buffer layer 181 may be formed as a multilayer in which one or more inorganic layers of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. The touch buffer layer 181 may be omitted.

[0163] The first touch sacrificial layer 182 may be positioned between the touch buffer layer 181 and the first connection electrode BE1. The first touch sacrificial layer 182 may be positioned to overlap with the first connection electrode BE1, and the first touch sacrificial layer 182 may be in contact with the first connection electrode BE1. The first touch sacrificial layer 182 of the display device 10 may not be positioned anywhere except in an area overlapping with the first connection electrode BE1. That is, the first touch sacrificial layer 182 may have an island shape while overlapping with the first connection electrode BE1.

[0164] The first touch sacrificial layer 182 may include a material having a higher etching rate than that of the first connection electrode BE1. In a wet etching process for forming the first connection electrode BE1, the first touch sacrificial layer 182 may react with a hydrofluoric acid-based etchant to reduce the etching rate of the first connection electrode BE1.

[0165] The first touch sacrificial layer 182 may include an inorganic film having a low film density. For example, the first touch sacrificial layer 182 may include silicon nitride, silicon oxynitride, or silicon oxide. However, the present disclosure is not limited thereto, and the first touch sacrificial layer 182 may include any inorganic film that reacts with a hydrofluoric acid-based etching solution to reduce the etching rate of the first connection electrode BE1. Specifically, the film density of the first touch sacrificial layer 182 measured by an X-ray reflectometry (XRR) analyzer may be 2.2 g / cm 3 or smaller.

[0166] The first connection electrode BE1 may be positioned on the first touch sacrificial layer 182. As described above, the first connection electrode BE1 may be used to electrically connect adjacent driving electrodes TE to each other. The first connection electrode BE1 included in the present embodiment is illustrated as having a structure including copper (Cu), but is not limited thereto. Specifically, the first connection electrode BE1 may be formed as a single layer including molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may be formed as a stacked structure having aluminum and titanium (Ti / Al / Ti), a stacked structure having aluminum and indium tin oxide (ITO) (ITO / Al / ITO), an Ag-Pd-Cu (APC) alloy, or a stacked structure having an APC alloy and ITO (ITO / APC / ITO).

[0167] The touch insulating layer 183 may be disposed on the touch buffer layer 181 and the first connection electrode BE1. The touch insulating layer 183 may insulate a portion of the driving electrode TE from the first connection electrode BE1. The touch insulating layer 183 may be formed of an inorganic layer (e.g., a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer).

[0168] The second touch sacrificial layer 184 may be positioned on the touch insulating layer 183. The second touch sacrificial layer 184 may be positioned between the touch insulating layer 183 and the driving electrode TE and the sensing electrode RE. The second touch sacrificial layer 184 may be positioned to overlap with the driving electrode TE and the sensing electrode RE, and may contact with the driving electrode TE and the sensing electrode RE. The second touch sacrificial layer 184 of the display device 10 may not be positioned anywhere except in an area overlapping with the driving electrode TE, the sensing electrode RE, and the second connection electrode BE2. That is, the second touch sacrificial layer 184 may have an island shape while overlapping with the driving electrode TE and the sensing electrode RE (or the driving electrode TE, the sensing electrode RE, and the second connection electrode BE2).

[0169] In some embodiments, the second touch sacrificial layer 184 may include a first portion 184A overlapping the sensing electrode RE and a second portion 184B overlapping the driving electrode TE. This will be described in detail later.

[0170] The second touch sacrificial layer 184 may include a material having an etching rate higher than that of the driving electrode TE, the sensing electrode RE, and the second connecting electrode BE2. In the wet etching process for forming the driving electrode TE and the sensing electrode RE, the second touch sacrificial layer 184 may react with a hydrofluoric acid-based etchant to reduce the etching rate of the driving electrode TE and the sensing electrode RE. The second touch sacrificial layer 184 may include an inorganic film with a low film density. For example, the second touch sacrificial layer 184 may include silicon nitride, silicon oxynitride, or silicon oxide. However, the present disclosure is not limited thereto, and the second touch sacrificial layer 184 may include any inorganic film that reacts with a hydrofluoric acid-based etching solution to reduce the etching rate of the driving electrode TE and the sensing electrode RE. Specifically, the film density of the second touch sacrificial layer 184 measured by an X-ray reflectometry (XRR) analyzer may be 2.2 g / cm 3 or smaller.

[0171] The driving electrode TE, the sensing electrode RE, and the second connection electrode BE2 may be positioned on the second touch sacrificial layer 184. The driving electrode TE, the sensing electrode RE, and the second connection electrode BE2 may be positioned to overlap the non-emission area NLA.

[0172] The driving electrode TE, sensing electrode RE and second connection electrode BE2 included in the present embodiment are illustrated as having a structure including copper (Cu), but are not limited thereto. Specifically, the driving electrode TE, sensing electrode RE and second connection electrode BE2 may be formed as a single layer including molybdenum (Mo), titanium (Ti), copper (Cu) or aluminum (Al), or may be formed as a stacked structure (Ti / Al / Ti) of aluminum and titanium, a stacked structure (ITO / Al / ITO) of aluminum and indium tin oxide (ITO), an Ag-Pd-Cu (APC) alloy, or a stacked structure (ITO / APC / ITO) of an APC alloy and ITO. The driving electrode TE may be electrically connected to the first connection electrode BE1 through the touch contact hole TCNT1.

[0173] The touch protection layer 185 may be arranged on the touch insulation layer 183, the driving electrode TE, the sensing electrode RE, and the second connection electrode BE2. The touch protection layer 185 may be used to flatten the profile of the lower structure thereof. The touch protection layer 185 may include at least one of an inorganic layer and an organic layer. The inorganic layer may be a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic layer may include an organic material such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, or a polyimide resin.

[0174] The light blocking layer BM may overlap the non-emission area NLA and may be disposed on the touch sensor layer 180. The light blocking layer BM may be disposed to overlap the pixel defining layer 151 and the sensing electrode RE and the driving electrode TE. The light blocking layer BM may prevent visible light penetration and color mixing between the first emission area EA1, the second emission area EA2, and the third emission area EA3 to improve color reproducibility of the display device 10.

[0175] The light blocking layer BM may include a light absorbing material. For example, the light blocking layer BM may include an inorganic black pigment or an organic black pigment. The inorganic black pigment may be carbon black, and the organic black pigment may include at least one of lactam black, perylene black, and aniline black, but they are not limited thereto.

[0176] The color filter layer 190 may be disposed in the first, second, and third emission areas EA1, EA2, and EA3 and the non-emission area NLA, and may be disposed on the touch protection layer 185 and the light blocking layer BM.

[0177] The color filter layer 190 may include a first color filter 191, a second color filter 193, and a third color filter 195 arranged to correspond to different first emission areas EA1, second emission areas EA2, and third emission areas EA3, respectively. The plurality of color filters 191, 193, and 195 may include a colorant such as a dye or a pigment that absorbs light in a wavelength band other than light in a specific wavelength band, and may be arranged to correspond to the color of light emitted from the first emission area EA1, the second emission area EA2, and the third emission area EA3. For example, the first color filter 191 may be a red color filter arranged to overlap with the first emission area EA1 and transmit only red first light. The second color filter 193 may be a green color filter arranged to overlap with the second emission area EA2 and transmit only green second light, and the third color filter 195 may be a blue color filter arranged to overlap with the third emission area EA3 and transmit only blue third light.

[0178] Fig. 9 yes Figure 8 An enlarged cross-sectional view of portion “T3”. Fig.10 and Fig.11 is based on Fig. 9 FIG. 1 is an enlarged cross-sectional view of a sensing electrode RE of a display device 10 according to another embodiment of the present invention.

[0179] In some embodiments, the second touch sacrificial layer 184 of the display device 10 may include a first portion 184A overlapping the sensing electrode RE and a second portion 184B overlapping the driving electrode TE.

[0180] Reference Fig. 9, the first portion 184A of the second touch sacrificial layer 184 overlapping the sensing electrode RE may include a bottom surface 184a facing the touch insulating layer 183, a top surface 184b facing the sensing electrode RE, and a side surface 184c connecting the top surface 184b to the bottom surface 184a. The side surface 184c of the first portion 184A may contact the touch protection layer 185. Through the aforementioned wet etching process, the side surface 184c of the first portion 184A may have an inclined surface. Therefore, the inclined angle θ1 formed between the bottom surface 184a and the side surface 184c of the second touch sacrificial layer 184 may be an acute angle.

[0181] In some embodiments, the first portion 184A of the second touch sacrificial layer 184 may be formed on the entire surface of the touch insulating layer 183 and then formed into an island shape as shown in the drawings by the aforementioned wet etching process. Therefore, the first portion 184A of the second touch sacrificial layer 184 included in the display device 10 may be positioned in a portion overlapping with the sensing electrode RE.

[0182] In some embodiments, the sensing electrode RE may be formed as a double-layer structure including a first layer RE1 and a second layer RE2. The second layer RE2 of the sensing electrode RE may contact the second touch sacrificial layer 184. The second layer RE2 of the sensing electrode RE may include a metal having an etching rate lower than that of the second touch sacrificial layer 184. For example, the second layer RE2 of the sensing electrode RE may include titanium (Ti) or molybdenum (Mo).

[0183] In addition, the first layer RE1 of the sensing electrode RE may be positioned to contact the second layer RE2. The first layer RE1 of the sensing electrode RE may include a metal having an etching rate lower than that of the second touch sacrificial layer 184. For example, the first layer RE1 of the sensing electrode RE may include copper (Cu). The thickness of the first layer RE1 of the sensing electrode RE in the third direction (Z-axis direction) may be greater than the thickness of the second layer RE2 of the sensing electrode RE.

[0184] In some embodiments, the first layer RE1 of the sensing electrode RE may include a side surface RE1c facing the touch protection layer 185. The side surface RE1c of the first layer RE1 of the sensing electrode RE may be in contact with the touch protection layer 185.

[0185] As described above, the second touch sacrificial layer 184 may have an etching rate higher than the etching rates of the first layer RE1 and the second layer RE2 of the sensing electrode RE. Therefore, in the wet etching process during the manufacturing process of the display device 10, the second touch sacrificial layer 184 may be exposed to the etchant synchronously with the first layer RE1 and the second layer RE2 of the sensing electrode RE, thereby reducing the etching rate of the first layer RE1 and the second layer RE2 of the sensing electrode RE. In other words, in the wet etching process during the manufacturing process, the second touch sacrificial layer 184 may react more with the hydrofluoric acid-based etching solution than the sensing electrode RE, thereby reducing the etching rate of the side surface RE1c of the sensing electrode RE. Therefore, the sensing electrode RE of the display device 10 may have a low etching rate on the side surface RE1c.

[0186] Generally, metal wiring included in a high-resolution product may require a large thickness and a small wiring width. For example, when the lateral etching rate of the metal wiring is reduced, it is possible to form a metal wiring that may have a large height and a narrow width. Therefore, the display device 10 according to the present embodiment may include a sacrificial layer including an inorganic material under the metal wiring including copper (Cu), thereby reducing the lateral etching rate of the metal wiring to form a metal wiring suitable for a high-resolution product.

[0187] In some embodiments, the sensing electrode RE is not limited to a double-layer structure. Fig.10 , the sensing electrode RE may be formed of a single layer including only the first layer RE1, and referring to Fig.11 , the sensing electrode RE may be formed in a multi-layer structure including a first layer RE1 , a second layer RE2 , and a third layer RE3 .

[0188] like Fig.10 As shown in , when the sensing electrode RE is formed of a single layer, the first layer RE1 of the sensing electrode RE may be positioned to contact the first portion 184A of the second touch sacrificial layer 184. As described above, the first layer RE1 of the sensing electrode RE may include a metal having an etching rate lower than that of the second touch sacrificial layer 184, and in one example, the first layer RE1 of the sensing electrode RE may include copper (Cu).

[0189] like Fig.11As shown in , when the sensing electrode RE is formed of a multi-layer structure, the second layer RE2 of the sensing electrode RE may be positioned to contact the second touch sacrificial layer 184, the first layer RE1 of the sensing electrode RE may be positioned on the second layer RE2, and the third layer RE3 of the sensing electrode RE may be positioned on the first layer RE1. The third layer RE3 of the sensing electrode RE may include a metal having an etching rate lower than that of the second touch sacrificial layer 184. For example, the third layer RE3 of the sensing electrode RE may include titanium (Ti), molybdenum (Mo), and indium tin oxide (ITO). For example, the sensing electrode RE formed in the multi-layer structure may include wiring including an upper metal and a lower metal such as Ti / Cu / Ti, Mo / Cu / Mo, or Ti / Cu / ITO.

[0190] As described above, regardless of the number of layers constituting the sensing electrode RE, the sensing electrode RE may include copper (Cu). In addition, regardless of the number of layers constituting the sensing electrode RE, the first portion 184A of the second touch sacrificial layer 184 may have an etching rate higher than that of the sensing electrode RE. Therefore, the first portion 184A of the second touch sacrificial layer 184 may reduce the lateral etching rate of the sensing electrode RE.

[0191] Fig.12 yes Figure 8 An enlarged plan view of portion “T3”.

[0192] Reference Fig.12 , in a plan view, a side surface RE1c of the sensing electrode RE included in the display device 10 may completely overlap with the first portion 184A of the second touch sacrificial layer 184. In addition, in a plan view, a side surface 184c of the first portion 184A of the second touch sacrificial layer 184 may completely overlap with the touch insulating layer 183. For simplicity of description, the sensing electrode RE is shown and described as an example, but the metal wirings included in the display device 10 may all have the same structure.

[0193] Fig.13 yes Figure 8 An enlarged cross-sectional view of portion “T5”.

[0194] Reference Fig.13 , the first touch sacrificial layer 182 may be positioned between the touch buffer layer 181 and the first connection electrode BE1. The first touch sacrificial layer 182 may contact the touch buffer layer 181 and the first connection electrode BE1. The first touch sacrificial layer 182 may be positioned in a region overlapping with the first connection electrode BE1. That is, the first touch sacrificial layer 182 may have an island shape while overlapping with the first connection electrode BE1.

[0195] The first touch sacrificial layer 182 may include a side surface 182c in the first direction (X-axis direction). Through the aforementioned wet etching process, the side surface 182c of the first touch sacrificial layer 182 may have an inclined surface. For example, the inclination angle θ2 formed between the side surface 182c of the first touch sacrificial layer 182 and the touch buffer layer 181 may be an acute angle. The side surface 182c of the first touch sacrificial layer 182 may contact the touch insulating layer 183.

[0196] The first connection electrode BE1 may include a double-layer structure including a first layer BE11 and a second layer BE12. The second layer BE12 of the first connection electrode BE1 may contact the first touch sacrificial layer 182. The second layer BE12 of the first connection electrode BE1 may include a metal having an etching rate lower than that of the first touch sacrificial layer 182. For example, the second layer BE12 of the first connection electrode BE1 may include titanium (Ti) or molybdenum (Mo).

[0197] In addition, the first layer BE11 of the first connection electrode BE1 may be positioned to contact the second layer BE12. The first layer BE11 of the first connection electrode BE1 may include a metal having an etching rate lower than that of the first touch sacrificial layer 182. For example, the first layer BE11 of the first connection electrode BE1 may include copper (Cu). The thickness of the first layer BE11 of the first connection electrode BE1 in the third direction (Z-axis direction) may be greater than the thickness of the second layer BE12 of the first connection electrode BE1.

[0198] In some embodiments, the first layer BE11 of the first connection electrode BE1 may include a side surface BE11 c . The side surface BE11 c of the first connection electrode BE1 may make contact with the touch insulation layer 183 .

[0199] In some embodiments, the first connection electrode BE1 is not limited to a double-layer structure. Fig.10 The single-layer structure shown in FIG. 1 has a single-layer structure similar to that of FIG. 1 , or can be Fig.11 The multi-layer structure shown in FIG. 1 similarly has a multi-layer structure. The first connection electrode BE1 may include the same structure and material as the sensing electrode RE. Other redundant descriptions will be omitted.

[0200] The first touch sacrificial layer 182 may have an etching rate higher than those of the first layer BE11 and the second layer BE12 of the first connection electrode BE1, thereby reducing a lateral etching rate of the first layer BE11 and the second layer BE12 of the first connection electrode BE1 in a wet etching process during a manufacturing process of the display device 10. Other redundant descriptions will be omitted.

[0201] The touch insulating layer 183 may be positioned on the first layer BE11 of the first connection electrode BE1 . The first touch sacrificial layer 182 and the first connection electrode BE1 may be covered by the touch insulating layer 183 .

[0202] like Fig.13 As shown in FIG. 1 , the touch contact hole TCNT1 is formed through the touch insulating layer 183. The driving electrode TE may be positioned on the first connection electrode BE1 and connected to the first connection electrode BE1 through the touch contact hole TCNT1 formed through the touch insulating layer 183. As described above, the driving electrode TE may be connected to the first connection electrode BE1 through the touch contact hole TCNT1, and the driving electrode TE may be connected to another adjacent driving electrode TE through the first connection electrode BE1.

[0203] In some embodiments, the driving electrode TE of the display device 10 may be formed into a double-layer structure including a first layer TE1 and a second layer TE2. The second layer TE2 of the driving electrode TE may be positioned on the touch insulating layer 183 and the first connection electrode BE1. Therefore, the second layer TE2 of the driving electrode TE may include a step portion along the contour of its lower structure. The second layer TE2 of the driving electrode TE may contact the second touch sacrificial layer 184 along the edge of the touch contact hole TCNT1. The second layer TE2 of the driving electrode TE may include a metal having an etching rate lower than that of the second touch sacrificial layer 184. For example, the second layer TE2 of the driving electrode TE may include titanium (Ti) or molybdenum (Mo).

[0204] In addition, the first layer TE1 of the driving electrode TE may be positioned to contact the second layer TE2. The first layer TE1 of the driving electrode TE may include a step portion along the contour of the second layer TE2 of the driving electrode TE. The first layer TE1 of the driving electrode TE may include a metal having an etching rate lower than that of the second touch sacrificial layer 184. For example, the first layer TE1 of the driving electrode TE may include copper (Cu). The thickness of the first layer TE1 of the driving electrode TE in the third direction (Z-axis direction) may be greater than the thickness of the second layer TE2 of the driving electrode TE in the third direction (Z-axis direction).

[0205] In some embodiments, the driving electrode TE of the display device 10 may include a side surface TE1c facing the touch protection layer 185. The side surface TE1c of the driving electrode TE may be in contact with the touch protection layer 185.

[0206] In some embodiments, the driving electrode TE is not limited to a double-layer structure. Fig.10 The single-layer structure shown in FIG. 1 has a single-layer structure similar to that of FIG. 1 , or can be Fig.11The multilayer structure shown in FIG. 4 has a multilayer structure similarly. The driving electrode TE may include the same structure and material as the sensing electrode RE. Other redundant descriptions will be omitted.

[0207] As described above, the second touch sacrificial layer 184 may include the first portion 184A overlapping the sensing electrode RE and the second portion 184B overlapping the driving electrode TE.

[0208] In some embodiments, the second portion 184B of the second touch sacrificial layer 184 may be arranged to overlap with the side of the driving electrode TE. Specifically, in a cross-sectional view, the second portion 184B of the second touch sacrificial layer 184 may include a first sub-portion 184B-1 positioned on one side of the driving electrode TE in the first direction (X-axis direction) and a second sub-portion 184B-2 positioned on the other side of the driving electrode TE in the first direction (X-axis direction). The first sub-portion 184B-1 and the second sub-portion 184B-2 may be spaced apart from each other, and the touch contact hole TCNT1 and the driving electrode TE are interposed between the first sub-portion 184B-1 and the second sub-portion 184B-2. Therefore, the second portion 184B of the second touch sacrificial layer 184 may not overlap with the touch contact hole TCNT1.

[0209] In some embodiments, the first sub-portion 184B-1 may include a first side surface 184Bc and a second side surface 184Bd. The first side surface 184Bc of the first sub-portion 184B-1 may have an inclined surface. For example, the inclination angle θ3 formed between the touch insulation layer 183 and the first side surface 184Bc may be an acute angle. The first side surface 184Bc of the first sub-portion 184B-1 may be in contact with the touch protection layer 185. In addition, the second side surface 184Bd of the first sub-portion 184B-1 may be a surface facing the first side surface 184Bc, and may be in contact with the driving electrode TE.

[0210] Although not shown, the second sub-portion 184B-2 included in the second portion 184B of the second touch sacrificial layer 184 may include a first side surface in contact with the touch protection layer 185 and a second side surface in contact with the driving electrode TE. The first side surface of the second sub-portion 184B-2 may have an inclined surface, and, for example, an inclined angle formed between the touch insulation layer 183 and the first side surface of the second sub-portion 184B-2 may be an acute angle.

[0211] The second touch sacrificial layer 184 may have an etching rate higher than that of the first layer TE1 and the second layer TE2 of the driving electrode TE, thereby reducing the etching rates of the first layer TE1 and the second layer TE2 of the driving electrode TE in a wet etching process during a manufacturing process of the display device 10. Therefore, an etching rate on the side surface TE1c of the driving electrode TE of the display device 10 may be reduced. Redundant description will be omitted.

[0212] Although not shown, in a plan view, a side surface BE11c of the first connection electrode BE1 included in the display device 10 may overlap with the first touch sacrificial layer 182, and a side surface 182c of the first touch sacrificial layer 182 may overlap with the touch buffer layer 181. In addition, in a plan view, a side surface TE1c of the drive electrode TE included in the display device 10 may overlap with the second portion 184B of the second touch sacrificial layer 184, and a first side surface 184Bc of the second portion 184B may overlap with the touch insulating layer 183. This may be consistent with the fact that the first portion 184A of the second touch sacrificial layer 184 overlaps with the side surface RE1c of the sensing electrode RE in a plan view and the touch insulating layer 183 overlaps with the first portion 184A of the second touch sacrificial layer 184 in a plan view. Fig.12 The shape is the same as shown in .

[0213] Fig.14 yes Figure 8 An enlarged cross-sectional view of portion “T7”.

[0214] Reference Fig.14 , the first sacrificial layer 112 of the display device 10 may be positioned between the first buffer layer 111 and the lower metal layer BML. The first sacrificial layer 112 may overlap the lower metal layer BML while being in contact with the lower metal layer BML. The first sacrificial layer 112 in the display device 10 may not be positioned in a portion that does not overlap the lower metal layer BML. That is, the first sacrificial layer 112 of the display device 10 may have an island shape while overlapping the lower metal layer BML.

[0215] In some embodiments, the first sacrificial layer 112 may be formed on the entire surface of the first buffer layer 111 and then formed into an island shape as shown in the drawings through the aforementioned wet etching process.

[0216] The first sacrificial layer 112 of the display device 10 may include the same structure and features as the first touch sacrificial layer 182 overlapping the first connection electrode BE1 of the display device 10 and the second touch sacrificial layer 184 overlapping the sensing electrode RE of the display device 10. Specifically, the first sacrificial layer 112 may include a side surface facing the second buffer layer 113, and the inclination angle formed between the first buffer layer 111 and the side surface of the first sacrificial layer 112 may be an acute angle. The side surface of the first sacrificial layer 112 may contact the second buffer layer 113. The side surface of the first sacrificial layer 112 may be formed to be inclined as the first sacrificial layer 112 undergoes an etching process.

[0217] The lower metal layer BML of the display device 10 may have a double-layer structure including a first layer B1 and a second layer B2. The second layer B2 of the lower metal layer BML may contact the first sacrificial layer 112. The second layer B2 of the lower metal layer BML may include a metal having an etching rate lower than that of the first sacrificial layer 112. For example, the second layer B2 of the lower metal layer BML may include titanium (Ti) or molybdenum (Mo).

[0218] In addition, the first layer B1 of the lower metal layer BML may contact the second layer B2. The first layer B1 of the lower metal layer BML may include a metal having an etching rate lower than that of the first sacrificial layer 112. For example, the first layer B1 of the lower metal layer BML may include copper (Cu). The thickness of the first layer B1 of the lower metal layer BML in the third direction (Z-axis direction) may be greater than the thickness of the second layer B2 of the lower metal layer BML.

[0219] In some embodiments, the lower metal layer BML is not limited to a double-layer structure. Specifically, the lower metal layer BML may be formed as Fig.10 A single layer structure similar to that shown in or may have a Fig.11 The lower metal layer BML may include the same structure and material as the sensing electrode RE. Other redundant descriptions will be omitted.

[0220] The first sacrificial layer 112 may have an etching rate higher than that of the first and second layers B1 and B2 of the lower metal layer BML, thereby reducing a lateral etching rate of the first and second layers B1 and B2 of the lower metal layer BML in a wet etching process during a manufacturing process of the display device 10. Redundant description will be omitted.

[0221] like Fig.14 As shown in , the second sacrificial layer 116 may be positioned on the gate insulating layer 115. The second sacrificial layer 116 may overlap the gate electrode GE while being in contact with the gate electrode GE. The second sacrificial layer 116 of the display device 10 may not be positioned at a portion that does not overlap the gate electrode GE. That is, the second sacrificial layer 116 of the display device 10 may have an island shape while overlapping the gate electrode GE.

[0222] In some embodiments, the second sacrificial layer 116 may be formed on the entire surface of the gate insulating layer 115 and then formed into an island shape as shown in the drawings by the aforementioned wet etching process. Exemplarily, when the positions of the lower metal layer BML and the gate electrode GE are the same in the display device 10, the first sacrificial layer 112 and the second sacrificial layer 116 may overlap in the third direction (Z-axis direction).

[0223] The second sacrificial layer 116 may include the same structure and features as the first sacrificial layer 112, the first touch sacrificial layer 182, and the first portion 184A of the second touch sacrificial layer 184 overlapping the sensing electrode RE in the display device 10. Specifically, the second sacrificial layer 116 may include a side surface facing the first interlayer insulating layer 117, and an inclination angle formed between the gate insulating layer 115 and the side surface of the second sacrificial layer 116 may be an acute angle. The inclined side surface of the second sacrificial layer 116 may be formed by a wet etching process during the manufacturing process.

[0224] The gate electrode GE of the display device 10 may be formed as a double-layer structure including a first layer G1 and a second layer G2. The second layer G2 of the gate electrode GE may contact the second sacrificial layer 116. The second layer G2 of the gate electrode GE may include a metal having an etching rate lower than that of the second sacrificial layer 116. For example, the second layer G2 of the gate electrode GE may include titanium (Ti) or molybdenum (Mo). The first layer G1 of the gate electrode GE may be positioned to contact the second layer G2.

[0225] In addition, the first layer G1 of the gate electrode GE may include a metal having an etching rate lower than that of the second sacrificial layer 116. For example, the first layer G1 of the gate electrode GE may include copper (Cu). The thickness of the first layer G1 of the gate electrode GE in the third direction (Z-axis direction) may be greater than the thickness of the second layer G2 of the gate electrode GE.

[0226] However, the gate electrode GE is not limited to the double-layer structure. Fig.10 A single layer structure similar to that shown in or may have a Fig.11 The gate electrode GE may have the same structure and material as the sensing electrode RE. Other redundant descriptions will be omitted.

[0227] The second sacrificial layer 116 may have an etching rate higher than that of the first layer G1 and the second layer G2 of the gate electrode GE, thereby reducing the etching rates of the first layer G1 and the second layer G2 of the gate electrode GE in a wet etching process during a manufacturing process of the display device 10. Therefore, a lateral etching rate of the gate electrode GE included in the display device 10 may be reduced.

[0228] Fig.15 According to another embodiment, Figure 7 A cross-sectional view of the display panel taken along line X1-X1'.

[0229] Reference Fig.15The display device 30 is different from the display device 10 in that the first sacrificial layer 112, the second sacrificial layer 116, the first touch sacrificial layer 182, and the second touch sacrificial layer 184 have a structure deposited on the entire surface instead of an island shape. Therefore, the first sacrificial layer 112, the second sacrificial layer 116, the first touch sacrificial layer 182, and the second touch sacrificial layer 184 of the display device 30 can be positioned to overlap the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA.

[0230] The display device 30 may include a substrate 110, a thin film transistor layer 130, a light emitting element layer 150, a thin film encapsulation layer 170, a touch sensor layer 180, and a color filter layer 190. Redundant descriptions will be omitted.

[0231] The first sacrificial layer 112 may be positioned on the first buffer layer 111 in the display device 30. The first sacrificial layer 112 may cover the entire surface of the first buffer layer 111. That is, the first sacrificial layer 112 may be positioned to overlap the first emission area EA1, the second emission area EA2, and the third emission area EA3, and the non-emission area NLA. The first sacrificial layer 112 of the display device 30 may include a protruding portion overlapping the lower metal layer BML. This may be caused by etching a portion of the top surface of the first sacrificial layer 112 by a wet etching process during the manufacturing process of the display device 30. The structure of the protruding portion of the first sacrificial layer 112 will be described in detail later.

[0232] The second buffer layer 113 of the display device 30 may cover the first sacrificial layer 112 and the lower metal layer BML, and the thin film transistor TFT may be positioned on the second buffer layer 113. The second buffer layer 113 of the display device 30 may be arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA, and may contact the first sacrificial layer 112. The gate insulating layer 115 may be positioned on the second buffer layer 113 and the active layer ACT (specifically, on the second buffer layer 113, the active layer ACT, the source electrode SE, and the drain electrode DE). The description of other redundant parts of the display device 30 will be omitted.

[0233] The second sacrificial layer 116 may be positioned on the gate insulating layer 115 in the display device 30. The second sacrificial layer 116 may cover the entire surface of the gate insulating layer 115. That is, the second sacrificial layer 116 may be arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3, and the non-emission area NLA. The second sacrificial layer 116 of the display device 30 may include a protruding portion overlapping the gate electrode GE. This may be caused by etching a portion of the top surface of the second sacrificial layer 116 by a wet etching process during the manufacturing process of the display device 30. The protruding structure of the second sacrificial layer 116 will be described in detail later.

[0234] The gate electrode GE may be positioned on the second sacrificial layer 116 in the display device 30, and the first interlayer insulating layer 117 may be positioned on the gate electrode GE and the second sacrificial layer 116. The first interlayer insulating layer 117 of the display device 30 may be arranged in the first, second, and third emission areas EA1, EA2, and EA3 and the non-emission area NLA, and may contact the second sacrificial layer 116. Descriptions of other redundant parts of the display device 30 will be omitted.

[0235] In the touch sensor layer 180 of the display device 30, the first touch sacrificial layer 182 may be positioned on the touch buffer layer 181. The first touch sacrificial layer 182 may cover the entire surface of the touch buffer layer 181. That is, the first touch sacrificial layer 182 may be arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA. The first touch sacrificial layer 182 of the display device 30 may include a protruding portion overlapping the first connection electrode BE1. This may be caused by etching a portion of the top surface of the first touch sacrificial layer 182 by a wet etching process during the manufacturing process of the display device 30. The protruding structure of the first touch sacrificial layer 182 will be described in detail later.

[0236] The touch insulating layer 183 may be positioned on the first connection electrode BE1 and the first touch sacrificial layer 182 in the display device 30. The touch insulating layer 183 of the display device 30 may be arranged in the first, second, and third emission areas EA1, EA2, and EA3 and the non-emission area NLA, and may contact the first touch sacrificial layer 182.

[0237] The second touch sacrificial layer 184 may be positioned on the touch insulating layer 183 in the display device 30. The second touch sacrificial layer 184 may cover the entire surface of the touch insulating layer 183 except for a portion where the touch contact hole TCNT1 is formed. That is, the second touch sacrificial layer 184 may be arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA.

[0238] The second touch sacrificial layer 184 of the display device 30 may include a protruding portion overlapping a portion of the driving electrode TE and the sensing electrode RE. This may be caused by etching only a portion of the top surface of the second touch sacrificial layer 184 by a wet etching process during the manufacturing process of the display device 30. The protruding structure of the second touch sacrificial layer 184 will be described in detail later.

[0239] The touch protection layer 185 may be positioned on the sensing electrode RE, the driving electrode TE, and the second touch sacrificial layer 184 in the display device 30. The touch protection layer 185 of the display device 30 may be arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA, and may contact the second touch sacrificial layer 184. Descriptions of other redundant parts of the display device 30 will be omitted.

[0240] Fig.16 yes Fig.15 An enlarged cross-sectional view of portion “Q3”. Fig.17 yes Fig.15 An enlarged cross-sectional view of portion “Q5”.

[0241] Reference Fig.16 and Fig.17 , the second touch sacrificial layer 184 of the display device 30 may include a first portion 184A overlapping the sensing electrode RE and a second portion 184B overlapping the driving electrode TE. The first portion 184A included in the second touch sacrificial layer 184 of the display device 30 may differ from the first portion 184A included in the second touch sacrificial layer 184 of the display device 10 in that it overlaps the sensing electrode RE and the driving electrode TE.

[0242] Reference Fig.16 , the first portion 184A of the second touch sacrificial layer 184 of the display device 30 may include a protruding portion Ap1 and a flat portion Af.

[0243] The flat portion Af of the first portion 184A included in the second touch sacrificial layer 184 may cover the touch insulating layer 183 and be arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA. In addition, the protruding portion Ap1 of the first portion 184A may overlap with the sensing electrode RE and may protrude beyond the flat portion Af of the first portion 184A in the third direction (Z-axis direction).

[0244] In some embodiments, the protrusion Ap1 included in the first portion 184A of the display device 30 may contact the sensing electrode RE. The protrusion Ap1 of the first portion 184A may be formed by forming the second touch sacrificial layer 184 on the entire surface of the touch insulating layer 183 and then etching a portion of the top surface of the second touch sacrificial layer 184 by the aforementioned wet etching process. Therefore, the height HAp1 of the protrusion Ap1 may be adjusted according to the wet etching time in the wet etching process in the manufacturing process of the display device 30. In other words, in the wet etching process in the manufacturing process of the display device 30, as the wet etching time increases, the height HAp1 of the protrusion Ap1 may increase. The protrusion Ap1 included in the first portion 184A of the display device 30 may be formed only in a portion overlapping the sensing electrode RE. Therefore, the protrusion Ap1 may be positioned to protrude in an island shape.

[0245] In some embodiments, the protruding portion Ap1 of the first portion 184A may include a side surface Ap1c facing the touch protection layer 185. The side surface Ap1c of the protruding portion Ap1 may have an inclined surface. The inclined side surface Ap1c of the protruding portion Ap1 may be formed by a wet etching process. For example, the inclined angle θ1 formed between the side surface Ap1c of the protruding portion Ap1 and its lower structure may be an acute angle.

[0246] The etching rate of the second touch sacrificial layer 184 included in the display device 30 may be relatively higher than the etching rate of the sensing electrode RE. Therefore, in the wet etching process during the manufacturing process, the second touch sacrificial layer 184 of the display device 30 may react more with the hydrofluoric acid-based etching solution than the sensing electrode RE, thereby reducing the etching rate of the sensing electrode RE. The redundant parts described above will be omitted.

[0247] The sensing electrode RE of the display device 30 may have a double-layer structure including a first layer RE1 and a second layer RE2. The second layer RE2 of the sensing electrode RE may contact the protruding portion Ap1 of the second touch sacrificial layer 184. The first layer RE1 of the sensing electrode RE may be positioned to contact the second layer RE2. The first layer RE1 and the second layer RE2 of the sensing electrode RE may include a metal having an etching rate lower than that of the second touch sacrificial layer 184. For example, the first layer RE1 of the sensing electrode RE may include copper (Cu).

[0248] In some embodiments, the first layer RE1 of the sensing electrode RE included in the display device 30 may include a side surface RE1c facing the touch protection layer 185. The side surface RE1c of the sensing electrode RE included in the display device 30 may make contact with the touch protection layer 185.

[0249] In the drawings, the sensing electrode RE included in the display device 30 is shown as having a double-layer structure, but is not limited thereto. That is, the sensing electrode RE included in the display device 30 may be formed as a single-layer or multi-layer structure. Other redundant descriptions will be omitted.

[0250] Reference Fig.17 , the first touch sacrificial layer 182 of the display device 30 may include a protruding portion 182p and a flat portion 182f.

[0251] The flat portion 182f of the first touch sacrificial layer 182 included in the display device 30 may cover the touch buffer layer 181 and be arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA. In addition, the protruding portion 182p of the first touch sacrificial layer 182 may overlap the first connection electrode BE1 and may protrude beyond the flat portion 182f of the first touch sacrificial layer 182 in the third direction (Z-axis direction).

[0252] In some embodiments, the protruding portion 182p of the first touch sacrificial layer 182 included in the display device 30 may contact the first connection electrode BE1. The protruding portion 182p of the first touch sacrificial layer 182 may be formed by forming the first touch sacrificial layer 182 on the entire surface of the touch buffer layer 181 and then etching a portion of the top surface of the first touch sacrificial layer 182 by the aforementioned wet etching process. The height H182 of the protruding portion 182p of the first touch sacrificial layer 182 may be adjusted according to the wet etching time in the wet etching process in the manufacturing process of the display device 30. In other words, in the wet etching process in the manufacturing process of the display device 30, as the wet etching time increases, the height H182 of the protruding portion 182p may increase. The protruding portion 182p included in the first touch sacrificial layer 182 of the display device 30 may be formed only in a portion overlapping the first connection electrode BE1. Therefore, the protruding portion 182p included in the first touch sacrificial layer 182 may be positioned to protrude in an island shape.

[0253] In some embodiments, the protruding portion 182p of the first touch sacrificial layer 182 may include a side surface 182c facing the touch insulating layer 183. The side surface 182c of the protruding portion 182p may be an inclined surface. The inclined side surface 182c of the protruding portion 182p may be formed by a wet etching process. For example, the inclination angle θ2 formed between the side surface 182c of the protruding portion 182p and its lower structure may be an acute angle. The side surface 182c of the protruding portion 182p may contact the touch insulating layer 183.

[0254] The etching rate of the first touch sacrificial layer 182 included in the display device 30 may be relatively higher than that of the first connection electrode BE1. Therefore, in a wet etching process during a manufacturing process, the first touch sacrificial layer 182 of the display device 30 may react more with a hydrofluoric acid-based etching solution than the first connection electrode BE1, thereby reducing the etching rate of the first connection electrode BE1.

[0255] In addition, the first connection electrode BE1 included in the display device 30 is shown as having a double-layer structure, but is not limited thereto. That is, the first connection electrode BE1 included in the display device 30 may have a single-layer or multi-layer structure. Other redundant descriptions will be omitted.

[0256] The driving electrode TE of the display device 30 may be electrically connected to the first connection electrode BE1 through the touch contact hole TCNT1. The touch insulating layer 183 and the second touch sacrificial layer 184 positioned between the driving electrode TE and the first connection electrode BE1 in the display device 30 may be removed to form the touch contact hole TCNT1. Therefore, in a cross-sectional view, the second touch sacrificial layer 184 may include a first portion 184A positioned on one side of the driving electrode TE in the first direction (X-axis direction) and a second portion 184B positioned on the other side of the driving electrode TE in the first direction (X-axis direction).

[0257] In some embodiments, the first portion 184A of the second touch sacrificial layer 184 included in the display device 30 may be a portion extending from the non-emission area NLA where the sensing electrode RE is located to the non-emission area NLA where the driving electrode TE is located. That is, the first portion 184A of the second touch sacrificial layer 184 included in the display device 30 may overlap the sensing electrode RE and the driving electrode TE.

[0258] Fig.18 yes Fig.17 An enlarged cross-sectional view of the driving electrode TE.

[0259] Reference Fig.18 , the first portion 184A of the second touch sacrificial layer 184 positioned on one side of the driving electrode TE in the first direction (X-axis direction) while overlapping the driving electrode TE of the display device 30 may include a flat portion Af and a protruding portion Ap2.

[0260] In some embodiments, the flat portion Af of the first portion 184A included in the display device 30 may extend from the aforementioned flat portion Af of the first portion 184A overlapping the sensing electrode RE, and may be integrated with the aforementioned flat portion Af.

[0261] In addition, the protruding portion Ap2 of the first portion 184A included in the display device 30 may be a portion overlapping one side of the driving electrode TE in the first direction (X-axis direction). The protruding portion Ap2 may be formed into the shape shown in the drawings by forming the second touch sacrificial layer 184 on the entire surface of the touch insulating layer 183 and then etching it by the aforementioned wet etching process. The height Hap2 of the protruding portion Ap2 of the first portion 184A may be changed according to the etching time in the wet etching process in the manufacturing process of the display device 30. In other words, in the wet etching process in the manufacturing process of the display device 30, as the wet etching time increases, the height Hap2 of the protruding portion Ap2 may increase.

[0262] In some embodiments, the protruding portion Ap2 of the first portion 184A may include a first side surface Ap2c and a second side surface Ap2d. The first side surface Ap2c of the protruding portion Ap2 may have an inclined surface. For example, the inclination angle θ3 formed between the first side surface Ap2c of the protruding portion Ap2 and its lower structure may be an acute angle. The presence of the protruding portion Ap2 of the first portion 184A including the inclined first side surface Ap2c may be caused by an etching process during the manufacturing process. The first side surface Ap2c of the protruding portion Ap2 may be in contact with the touch protection layer 185. In addition, the second side surface Ap2d of the protruding portion Ap2 may be a surface facing the first side surface Ap2c, and may be in contact with the driving electrode TE.

[0263] In some embodiments, the protrusion portion Ap1 of the first portion 184A overlapping the sensing electrode RE may be positioned in a non-emission area NLA different from the protrusion portion Ap2 of the first portion 184A overlapping the driving electrode TE. The protrusion portion Ap1 and the protrusion portion Ap2 of the first portion 184A may be connected to each other through the flat portion Af of the first portion 184A.

[0264] In some embodiments, the second portion 184B of the second touch sacrificial layer 184, which is positioned on one side of the driving electrode TE in the first direction (X-axis direction) while overlapping the driving electrode TE, may include a flat portion Bf and a protruding portion Bp1. In a cross-sectional view, the flat portion Bf and the protruding portion Bp1 of the second portion 184B may be spaced apart from the flat portion Af and the protruding portion Ap2 of the first portion 184A due to the touch contact hole TCNT1.

[0265] In some embodiments, the protruding portion Bp1 of the second portion 184B may be formed into the shape shown in the drawings by forming the second touch sacrificial layer 184 on the entire surface of the touch insulating layer 183 and then etching it through the aforementioned wet etching process. The height Hbp1 of the protruding portion Bp1 of the second portion 184B may be changed according to the etching time in the wet etching process in the manufacturing process of the display device 30. In other words, in the wet etching process in the manufacturing process of the display device 30, as the wet etching time increases, the height Hbp1 of the protruding portion Bp1 may increase.

[0266] In some embodiments, the protruding portion Bp1 of the second portion 184B may include a first side surface Bp1c and a second side surface Bp1d. The first side surface Bp1c of the protruding portion Bp1 may have an inclined surface. For example, the inclination angle θ4 formed between the first side surface Bp1c of the protruding portion Bp1 and its lower structure may be an acute angle. The presence of the protruding portion Bp1 of the second portion 184B including the inclined first side surface Bp1c may be caused by an etching process during the manufacturing process. The first side surface Bp1c of the protruding portion Bp1 may be in contact with the touch protection layer 185. In addition, the second side surface Bp1d of the protruding portion Bp1 may be a surface facing the first side surface Bp1c, and may be in contact with the driving electrode TE.

[0267] As described above, the etching rate of the second touch sacrificial layer 184 included in the display device 30 may be relatively higher than the etching rate of the driving electrode TE. Therefore, in the wet etching process during the manufacturing process, the second touch sacrificial layer 184 of the display device 30 may react more with the hydrofluoric acid-based etching solution than the driving electrode TE, thereby reducing the etching rate of the driving electrode TE. Redundant description will be omitted.

[0268] In some embodiments, the driving electrode TE included in the display device 30 is shown as having a double-layer structure, but is not limited thereto. That is, the driving electrode TE included in the display device 30 may have a single-layer or multi-layer structure. Other redundant descriptions will be omitted.

[0269] Fig.19 yes Fig.15 An enlarged cross-sectional view of portion “Q7”.

[0270] Reference Fig.19, the first sacrificial layer 112 of the display device 30 may include a protruding portion 112p and a flat portion 112f. The flat portion 112f of the first sacrificial layer 112 may be arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA, and may be positioned to contact the first buffer layer 111. In addition, the protruding portion 112p of the first sacrificial layer 112 may overlap the lower metal layer BML while contacting the lower metal layer BML. The protruding portion 112p of the first sacrificial layer 112 may be formed into the shape shown in the drawings by forming the first sacrificial layer 112 on the entire surface of the first buffer layer 111 and then etching a portion of the top surface of the first sacrificial layer 112 by the aforementioned wet etching process. The height of the protruding portion 112p of the first sacrificial layer 112 may be changed according to the etching time in the wet etching process during the manufacturing process of the display device 30.

[0271] As described above, the etching rate of the first sacrificial layer 112 included in the display device 30 may be relatively higher than the etching rate of the lower metal layer BML. Therefore, in the wet etching process during the manufacturing process, the first sacrificial layer 112 of the display device 30 may react more with the hydrofluoric acid-based etching solution than the lower metal layer BML, thereby reducing the etching rate of the lower metal layer BML.

[0272] In some embodiments, the lower metal layer BML included in the display device 30 is shown as having a double-layer structure, but is not limited thereto. That is, the lower metal layer BML included in the display device 30 may have a single-layer or multi-layer structure. Other redundant descriptions will be omitted.

[0273] In addition, the second sacrificial layer 116 overlapping the gate electrode GE in the display device 30 may include a protruding portion 116p and a flat portion 116f. The flat portion 116f of the second sacrificial layer 116 may be arranged in the first emission area EA1, the second emission area EA2, and the third emission area EA3 and the non-emission area NLA, and may be positioned to contact the gate insulating layer 115. In addition, the protruding portion 116p of the second sacrificial layer 116 may overlap the gate electrode GE while contacting the gate electrode GE. The protruding portion 116p of the second sacrificial layer 116 may be formed into the shape shown in the drawings by forming the second sacrificial layer 116 on the entire surface of the gate insulating layer 115 and then removing a portion of the top surface of the second sacrificial layer 116 by the aforementioned wet etching process. The height of the protruding portion 116p of the second sacrificial layer 116 may be changed according to the etching time in the wet etching process in the manufacturing process of the display device 30.

[0274] As described above, the etching rate of the second sacrificial layer 116 included in the display device 30 may be relatively higher than the etching rate of the gate electrode GE. Therefore, in the wet etching process during the manufacturing process, the second sacrificial layer 116 of the display device 30 may react more with the hydrofluoric acid-based etching solution than the gate electrode GE, thereby reducing the etching rate of the gate electrode GE.

[0275] In some embodiments, the gate electrode GE included in the display device 30 is shown as having a double-layer structure, but is not limited thereto. That is, the gate electrode GE included in the display device 30 may have a single-layer or multi-layer structure. Other redundant descriptions will be omitted.

[0276] Fig. 20 yes Fig.15 An enlarged plan view of portion “Q3”.

[0277] Reference Fig. 20 , in a plan view, the side surface RE1c of the first layer RE1 of the sensing electrode RE in the display device 30 may completely overlap with the second touch sacrificial layer 184. The planar structure of the display device 30 is different from that of another embodiment (display device 10) in that the second touch sacrificial layer 184 is arranged on the entire surface. For simplicity of description, the sensing electrode RE is shown and described as an example, but the metal wirings included in the display device 30 may all have the same structure.

[0278] At the end of the detailed description, those skilled in the art will appreciate that many changes and modifications can be made to the embodiments without departing substantially from the principles of the inventive concept. Therefore, the disclosed embodiments of the inventive concept are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A display device, comprising: A substrate, the substrate comprising an emitting region and a non-emitting region; a thin film transistor layer, the thin film transistor layer being positioned on the substrate; a touch buffer layer, the touch buffer layer being positioned on the thin film transistor layer; A connecting electrode, wherein the connecting electrode is positioned on the touch buffer layer; a touch insulating layer, wherein the touch insulating layer is positioned on the connecting electrode; a first electrode, the first electrode being positioned on the touch insulating layer and overlapping the non-emitting area; as well as a first touch sacrificial layer, the first touch sacrificial layer being positioned between the touch insulating layer and the first electrode, wherein the first touch sacrificial layer does not overlap with the emission area and is positioned in an island shape while overlapping with the non-emission area, and Wherein, an inclination angle formed between the side surfaces of the touch insulating layer and the first touch sacrificial layer has an acute angle.

2. The display device according to claim 1, further comprising a touch protection layer positioned on the first electrode, in, The side surface of the first touch sacrificial layer contacts the touch protection layer.

3. The display device according to claim 2, wherein: The first touch sacrificial layer further includes a first surface facing the touch insulating layer and a second surface facing the first electrode. The first surface is in contact with the touch insulating layer, and the second surface is in contact with the first electrode.

4. The display device according to claim 3, wherein: The first touch sacrificial layer is at least one selected from the group consisting of silicon nitride, silicon oxynitride, and silicon oxide.

5. The display device according to claim 3, wherein: The first electrode comprises at least one conductive layer, and Wherein, the first electrode comprises copper.

6. The display device according to claim 1, wherein: The first electrode completely overlaps with the first touch sacrificial layer in a plan view, and The first touch sacrificial layer completely overlaps with the touch insulating layer in a plan view.

7. The display device according to claim 6, wherein: In a plan view, the first electrode and the first touch sacrificial layer have a mesh shape to expose the emission area.

8. The display device according to claim 1, further comprising a second electrode, the second electrode being positioned on the touch insulating layer in the non-emitting region and spaced apart from the first electrode, and the emitting region being interposed between the second electrode and the first electrode, in, The second electrode is electrically connected to the connection electrode through a touch contact hole.

9. The display device according to claim 8, wherein: The first touch sacrificial layer includes a first portion overlapping the first electrode and a second portion overlapping the second electrode, and The second portion of the first touch sacrificial layer has an island shape between the second electrode and the touch insulating layer.

10. The display device according to claim 9, wherein: The second portion of the first touch sacrificial layer completely surrounds the touch contact hole in a plan view.

11. The display device according to claim 9, wherein: The second portion is not positioned on the touch contact hole.

12. The display device according to claim 1, further comprising a second touch sacrificial layer positioned between the touch buffer layer and the connection electrode, in, The second touch sacrificial layer is in contact with the touch buffer layer and the connecting electrode. wherein the second touch sacrificial layer is positioned in an island shape while overlapping with the connection electrode, and Wherein, an inclination angle formed between the side surfaces of the touch buffer layer and the second touch sacrificial layer has an acute angle.

13. The display device according to claim 12, wherein: The connecting electrode completely overlaps with the second touch sacrificial layer in a plan view, and The second touch sacrificial layer completely overlaps with the touch buffer layer in a plan view.

14. The display device according to claim 1, wherein: The thin film transistor layer comprises: A first buffer layer; a third electrode positioned on the first buffer layer; and a first sacrificial layer, the first sacrificial layer being positioned between the first buffer layer and the third electrode, Wherein, an inclination angle formed between side surfaces of the first buffer layer and the first sacrificial layer has an acute angle.

15. The display device according to claim 14, wherein: The first sacrificial layer has an island shape while overlapping the third electrode.

16. A display device, comprising: A substrate, the substrate comprising an emitting region and a non-emitting region; a thin film transistor layer, the thin film transistor layer being positioned on the substrate; a touch buffer layer, the touch buffer layer being positioned on the thin film transistor layer; A connecting electrode, wherein the connecting electrode is positioned on the touch buffer layer; a touch insulating layer, wherein the touch insulating layer is positioned on the connecting electrode; a first electrode positioned on the touch insulating layer and overlapping the non-emitting area; a touch protection layer, the touch protection layer being positioned on the first electrode; as well as a first touch sacrificial layer, the first touch sacrificial layer being positioned between the touch insulating layer and the first electrode, The first touch sacrificial layer includes a first portion overlapping the emission area and the non-emission area and a second portion overlapping the first electrode and protruding toward the first electrode.

17. The display device according to claim 16, wherein: The second portion of the first touch sacrificial layer contacts the first electrode.

18. The display device according to claim 17, wherein: The second portion includes a plurality of side surfaces facing the touch protection layer, and Wherein, an inclination angle formed between the side surface of the second portion of the first touch sacrificial layer and the touch insulating layer has an acute angle.

19. The display device according to claim 18, further comprising a second electrode, the second electrode being positioned on the touch insulating layer in the non-emitting region and spaced apart from the first electrode, and the emitting region being interposed between the second electrode and the first electrode, in, The first touch sacrificial layer further includes a third portion overlapping the second electrode and protruding toward the second electrode, and Wherein, an inclination angle formed between a side surface of the third portion facing the touch protection layer and the touch insulation layer has an acute angle.

20. The display device according to claim 19, wherein: The second portion and the third portion overlap the non-emitting region and are spaced apart from each other, and the emitting region is interposed between the second portion and the third portion, and Wherein, the second part and the third part are connected through the first part.

Images