Power electronic system comprising power semiconductor module and current sensor, and power semiconductor module
By designing a power semiconductor module containing a plastic frame and an electrically isolated current sensor in the power electronic system, the current sensor has a large space occupied, high manufacturing complexity and high cost, and the resource and energy saving is achieved.
Patent Information
- Application Number
- CN202411165281.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-08-25
- Filing Date
- 2024-08-23
- Publication Date
- 2025-02-25
AI Technical Summary
In existing power electronic systems, current sensors take up a large space, high manufacturing complexity and high cost, which is difficult to effectively solve.
A power electronic system is designed, including at least one power semiconductor module, which consists of a power electronic substrate, a power semiconductor die, a plastic frame and a load current contact. The plastic frame defines the internal volume, and the current sensor is partially arranged in the recesses of the frame and is electrically isolated by the frame, reducing space and complexity.
Through this design, power electronic systems maintain high efficiency and performance while reducing space occupancy and manufacturing complexity, reducing costs, and achieving resource and energy savings.
Smart Images
Figure CN119517922A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure generally relates to a power electronics system including a power semiconductor module and a current sensor, and a power semiconductor module configured to be used in a power electronics system. Background Art
[0002] A power electronics system may include one or more power semiconductor modules configured to operate at high voltage and / or high current, and a driver board including a driver circuit configured to control the power circuit of the power semiconductor module. Such a power electronics system may, for example, constitute (a part of) a circuit such as an inverter circuit, a converter circuit, etc. In order for the driver circuit to properly control (drive) the power circuit of the power semiconductor module, it may be necessary to provide the driver circuit with a measurement of the current flowing into or out of the power semiconductor module via a dedicated current sensor. However, such a current sensor may need to occupy a certain space in the power electronics system and / or may increase the manufacturing complexity of the power electronics system and / or may increase the cost of the power electronics system.
[0003] Improved power electronics systems and improved power semiconductor modules configured for use in power electronics systems may help address these and other issues. Summary of the invention
[0004] Various aspects relate to a power electronic system, the power electronic system including at least one power semiconductor module, the at least one power semiconductor module including: a power electronic substrate including a first side; at least one power semiconductor die arranged on and electrically coupled to the first side of the power electronic substrate; a plastic frame arranged at the first side of the power electronic substrate, the plastic frame defining an interior volume of the power semiconductor module, wherein the power semiconductor die is arranged in the interior volume; and a first load current contact electrically connected to the first side of the power electronic substrate and partially exposed from the plastic frame, the first load current contact including a first side facing away from the power electronic substrate and an opposite second side, wherein the plastic frame includes a recess located above the first side of the first load current contact. The power electronic system also includes a driver board arranged above the power semiconductor module, the driver board including a driver circuit configured to drive a power circuit of the at least one power semiconductor module. The power electronics system further comprises a current sensor arranged on a second side of the driver board facing the at least one power semiconductor module and electrically coupled to the second side of the driver board, the current sensor being configured to detect a load current flowing through the first load current contact, wherein the current sensor is at least partially arranged within the recess, and wherein the plastic frame is configured to electrically isolate the current sensor from the first load current contact.
[0005] Various aspects relate to a power semiconductor module, the power semiconductor module comprising: a power electronic substrate comprising a first side; at least one power semiconductor die arranged on the first side of the power electronic substrate and electrically coupled to the first side of the power electronic substrate; a plastic frame arranged at the first side of the power electronic substrate, the plastic frame defining an interior volume of the power semiconductor module, wherein the power semiconductor die is arranged in the interior volume; and a first load current contact portion electrically connected to the first side of the power electronic substrate and partially exposed from the plastic frame, the first load current contact portion comprising a first side facing away from the power electronic substrate and an opposite second side; wherein the plastic frame includes a recess located above the first side of the first load current contact portion, the recess being configured to receive a current sensor, and wherein the plastic frame is configured to electrically isolate the current sensor in the recess from the first load current contact portion.
[0006] Various aspects relate to a power electronic system, the power electronic system including at least one power semiconductor module, the at least one power semiconductor module including: a power electronic substrate including a first side; at least one power semiconductor die arranged on the first side of the power electronic substrate and electrically coupled to the first side of the power electronic substrate; a first spring element mechanically and electrically connected to the first side of the power electronic substrate. The power electronic system also includes a driver board arranged above the power semiconductor module so that the first side of the driver board faces away from the power semiconductor module and the opposite second side faces the power semiconductor module, the driver board including a driver circuit configured to drive a power circuit of the at least one power semiconductor module. The power electronic system also includes a first load current contact portion arranged on the first side of the driver board and electrically coupled to the first spring element. The power electronic system also includes a current sensor arranged on the second side of the driver board and electrically coupled to the second side of the driver board, the current sensor configured to detect a load current flowing through the first load current contact portion. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] The accompanying drawings illustrate examples and are used together with the description to explain the principles of the present disclosure. In view of the following detailed description, other examples and many expected advantages of the present disclosure will be easily understood. The elements of the accompanying drawings are not necessarily drawn to scale relative to each other. The same or similar reference numerals represent the same or similar parts.
[0008] Figure 1 A cross-sectional view of a power electronics system is shown, including a power semiconductor module, a driver board, and a current sensor configured to detect a load current flowing through a first load current contact of the power semiconductor module.
[0009] Figure 2 A top view of a power semiconductor module is shown, wherein the molded body comprises a recess configured to receive a current sensor.
[0010] Figure 3 A detailed view of a power semiconductor module is shown, wherein the position of the current sensor above the first load current contact is illustrated.
[0011] FIG. 4A to FIG. 4C A perspective view of another power electronics system is shown. Figure 4B and Figure 4C In the figure, the driver board is omitted in order to show the power semiconductor modules of the power electronics system in more detail.
[0012] Figure 5 A sectional view of a further power electronics system is shown, in which a first load current contact is arranged on a driver board.
[0013] Figure 6 is a flow chart of an exemplary method for manufacturing a power semiconductor module. DETAILED DESCRIPTION
[0014] In the following detailed description, known structures and elements are shown in schematic form to facilitate description of one or more aspects of the present disclosure. In this regard, directional terms such as "top", "bottom", "left", "right", "upper", "lower", etc. are used with reference to the orientation of the drawings being described. Because the components of the present disclosure can be positioned in many different orientations, the directional terms are used for illustrative purposes only. It should be understood that other examples can be utilized and that structural or logical changes can be made.
[0015] In addition, although the specific features or aspects of the examples may be disclosed only about one of several embodiments, such features or aspects may be combined with one or more other features or aspects of other embodiments, as long as it may be desirable and advantageous for any given or specific application, unless otherwise specifically noted or unless technically limited. In addition, with respect to the use of the terms "including", "having", "with" or their other variations in the detailed description or claims, these terms are intended to represent inclusion in a manner similar to the term "including". The terms "coupled" and "connected" and their derivatives may be used. It should be understood that these terms may be used to indicate that two elements cooperate or interact with each other, whether they are in direct physical or electrical contact, or they are not in direct contact with each other; an intermediate element or layer may be provided between the elements of "engagement", "attachment" or "connection". However, the elements of "engagement", "attachment" or "connection" may also be in direct contact with each other. In addition, the term "exemplary" is only meant as an example, not the best or optimal.
[0016] The examples of power semiconductor modules described below may use various types of semiconductor dies or circuits incorporated into semiconductor dies, including: AC / DC or DC / DC converter circuits, power MOS transistors, power Schottky diodes, JFETs (junction gate field effect transistors), power bipolar transistors, power integrated circuits, etc. These examples may also use semiconductor dies that include: MOS transistor structures or vertical transistor structures such as IGBT (insulated gate bipolar transistor) structures.
[0017] Efficient power electronic systems and efficient power semiconductor modules can, for example, reduce material consumption, ohmic losses, chemical waste, etc., and thus can achieve energy and / or resource savings. Thus, as specified in the present specification, improved power electronic systems and improved power semiconductor modules can at least indirectly contribute to green technology solutions, i.e. provide climate-friendly solutions that reduce energy and / or resource usage.
[0018] Figure 1 A cross-sectional view of a power electronics system 100 is shown which includes at least a power semiconductor module 110 , a driver board 120 and a current sensor 130 .
[0019] The power electronic system 100 may constitute or be a part of any suitable circuit. For example, the power electronic system 100 may constitute or be a part of a converter circuit, an inverter circuit, a half-bridge circuit, a full-bridge circuit, etc. According to one example, the power electronic system 100 is configured for automotive applications.
[0020] exist Figure 1 In the example shown, the power electronics system 100 includes a single power semiconductor module 110. However, the power electronics system 100 may also include a plurality of power semiconductor modules 110, such as two, three or more than three power semiconductor modules 110 electrically connected, in order to provide, for example, one of the exemplary circuits described above. More than one power semiconductor modules 110 may, for example, be arranged side by side and may, for example, all be connected to the same driver board 120. According to one example, more than one power semiconductor modules 110 are identical. According to another example, at least one of the power semiconductor modules 110 has a separate architecture.
[0021] At least one power semiconductor module 110 comprises a power electronic substrate 140, at least one power semiconductor die 150, a plastic frame 160 and a first load current contact 170. The current sensor 130 is particularly configured to detect a load current flowing through the first load current contact 170 during operation of the power electronic system 100. The power electronic system 100 may be configured to be coupled to an electric motor, in particular such that the first load current contact 170 is coupled to the electric motor. Depending on the operating mode of the electric motor, the first load current contact 170 may carry an AC current or a DC current. In other words, the load current may be an AC current or a DC current. According to an example, the power semiconductor module 110 may include additional components, such as Figure 1 Further power semiconductor dies, DC contacts, etc. not shown.
[0022] The power electronic substrate 140 includes a first side 141 and the power semiconductor die 150 is arranged on and electrically coupled to the first side 141 of the power electronic substrate 140. The power electronic substrate 140 may also include a second side 142 opposite the first side 141.
[0023] The power electronic substrate 140 may be, for example, a substrate of the type of direct copper bonding (DCB), direct aluminum bonding (DAB), active metal brazing (AMB), insulated metal substrate (IMS), printed circuit board (PCB), etc. The power electronic substrate 140 may be configured to have a relatively low thermal resistance.
[0024] According to an example, the power electronic system 100 further comprises a base plate, wherein the second side 142 of the at least one power electronic substrate 140 is arranged on the base plate. Such a base plate may, for example, include or consist of Al or Cu and may, for example, be configured to act as a heat sink and / or heat dissipation device.
[0025] At least one power semiconductor die 150 may be electrically and mechanically coupled to the power electronic substrate 140, for example, via a joint such as a solder joint, a sintered joint, or a joint comprising a conductive glue. For example, the power semiconductor die 150 may include a first power terminal, such as a drain, source, collector, or emitter terminal arranged on a lower side of the power semiconductor die 150, wherein the lower side faces the first side 141 of the power electronic substrate 140, and wherein the first power terminal is connected to the power electronic substrate 140.
[0026] The power semiconductor die 150 may for example include a second power terminal, such as a source, drain, emitter or collector terminal arranged on an upper side opposite to the lower side of the power semiconductor die 150. The power semiconductor die 150 may also include a control terminal, such as a gate terminal, arranged, for example, on the upper side.
[0027] According to an example, the power semiconductor module 110 includes one or more than one additional power semiconductor die 150. The more than one power semiconductor die 150 may all be identical, or the more than one power semiconductor die 150 may be different types of die. Furthermore, the more than one power semiconductor die 150 may be electrically connected, for example, via the power electronic substrate 140 and / or via electrical connectors, such as connecting wires, ribbons, or contact clips.
[0028] The plastic frame 160 is arranged at the first side 141 of the power electronic substrate 140. This may mean that the first side 141 is arranged in a first plane and the plastic frame 160 extends at least from the first plane to a point above the first plane. The plastic frame 160 defines an inner volume 111 of the power semiconductor module 110, wherein the power semiconductor die 150 is arranged within the inner volume 111. The power electronic substrate 140 may substantially provide a bottom of the inner volume 111, and the driver board may substantially provide a cover of the inner volume 111.
[0029] According to an example, the inner volume 111 is at least partially filled with a suitable dielectric potting material configured to protect the power semiconductor die 150 from environmental influences.
[0030] The plastic frame 160 may include or consist of any suitable plastic material. The plastic frame 160 may, for example, include or consist of a suitable hard plastic or soft plastic. The plastic frame 160 may substantially surround the power electronic substrate 140 on all lateral sides. The plastic frame 160 may have any suitable size. According to one example, the plastic frame 160 includes a lower half shell and an upper half shell. In this case, the first load current contact portion 170 may, for example, be arranged (i.e., sandwiched) between the lower half shell and the upper half shell.
[0031] The first load current contact 170 is electrically connected to the first side 141 of the power electronic substrate 140. Furthermore, the first load current contact 170 is partially exposed from the plastic frame 160. This may mean that the first load current contact 170 comprises an inner portion arranged within the inner volume 111 of the power semiconductor module 110, a middle portion extending through the plastic frame 160 and an outer portion exposed from the plastic frame 160 at a first lateral side of the power semiconductor module 110.
[0032] The first load current contact 170 may include or consist of any suitable metal or metal alloy. For example, the first load current contact 170 may include or consist of Al or Cu. The first load current contact 170 may, for example, be a lead frame component.
[0033] According to an example, the first load current contact 170 is configured as an output power contact of the power semiconductor module 110. The power semiconductor module 110 may also include, for example, a first and a second DC contact, which may, for example, be arranged at a second lateral side of the power semiconductor module opposite to the first lateral side. The first and the second DC contact may, for example, be configured to provide input power to the power semiconductor module 110.
[0034] The first load current contact 170 comprises a first side 171 facing away from the power electronic substrate 140 and an opposite second side 172. The second side 172 of the first load current contact 170 may be welded or sintered or glued to the first side 141 of the power electronic substrate 140 with a conductive glue, for example.
[0035] according to Figure 1In the example shown, the first load current contact portion 170 is coupled to the first side 141 of the power electronic substrate 140 in a first plane, and the first load current contact portion 170 is exposed from the plastic frame 160 in a second plane arranged above the first plane. The first load current contact portion 170 may, for example, include a first portion arranged in the first plane, a second portion arranged in the second plane, and a connecting portion connecting the first portion and the second portion. The connecting portion may, for example, be arranged substantially perpendicular to the first plane and / or the second plane (compare Figure 1 ).
[0036] The vertical distance between the first plane and the second plane (the vertical distance is measured perpendicular to the first side 141 of the power electronic substrate 140) can be, for example, in the range of about 5 mm to about 10 mm. The lower limit of the range can also be about 6 mm or about 7 mm, and the upper limit can also be about 9 mm or about 8 mm.
[0037] According to an example, the current sensor 130 is arranged in a third plane above the second plane. The distance between the second plane and the third plane may be, for example, one third or one fourth or one fifth or less of the distance between the first plane and the second plane.
[0038] The plastic frame 160 includes a recess 161 above the first side 171 of the first load current contact 170. The current sensor 130 is at least partially arranged in the recess 161. In addition, the plastic frame 160 is configured to electrically isolate the current sensor 130 from the first load current contact 170. This may mean that the thickness of the plastic frame 160 between the current sensor 130 and the first side 171 of the first load current contact 170 may be sufficient to prevent flashover.
[0039] According to one example, there is a gap of about 0.25 mm to about 0.8 mm between the current sensor 130 and the bottom of the recess 161, the gap being measured perpendicular to the first side 141 of the power electronic substrate 140. The lower limit of the range may also be about 0.3 mm, about 0.4 mm, or about 0.5 mm, and the upper limit may also be about 0.7 mm or about 0.6 mm. According to one example, the gap is filled with a gas, such as air. According to another example, the gap is filled with a filling material, such as one or more of silicone, foam, glue, or polymer. The filling material may be configured to prevent the current sensor 130 from colliding with the bottom of the recess due to, for example, vibration, mechanical shock, etc.
[0040] According to one example, the plastic frame 160 has a thickness t in the range of about 0.8 mm to about 1.5 mm over the first side 171 of the first load current contact 170. The lower limit of the range may also be about 0.9 mm or 1.0 mm, and the upper limit may also be about 1.4 mm or 1.3 mm or 1.2 mm or 1.1 mm.
[0041] The recess 161 may have any suitable shape and any suitable size. For example, when viewed from above the current sensor 130, the recess 161 may have a substantially rectangular or square shape. The bottom of the recess 161 may be substantially flat. The recess 161 may, for example, have a depth of 3 mm or less, or 2 mm or less, or 1.5 mm or less, or 1 mm or less, or 0.5 mm or less, or 0.3 mm or less, the depth being measured perpendicular to the first side 141 of the power electronic substrate 140. The recess 161 may, for example, have a length and / or width of 10 mm or less, or 7 mm or less, or 5 mm or less, or 3 mm or less, or 2 mm or less, the length and width being measured parallel to the first side 141.
[0042] The driver board 120 is arranged above the power semiconductor module 110. The driver board 120 includes a driver circuit configured to drive a power circuit of at least one power semiconductor module 110 (the power circuit particularly includes at least one power semiconductor die 150). The driver board 120 may include a first side 121 facing away from the power semiconductor module 110 and an opposite second side 122. The current sensor 130 is arranged on the second side 122 of the driver board 120 and is electrically coupled to the second side 122 of the driver board 120.
[0043] The current sensor 130 may be, for example, a surface mount device (SMD), which may, for example, include a sensor die arranged on a die carrier and a plastic body encapsulating the sensor die. The current sensor 130 may, for example, include a differential Hall sensor element. The current sensor 130 may, for example, be coupled to the driver board 120 via a solder joint. The current sensor 130 may be configured to provide measurement data of the load current flowing through the first load current contact 170 to the driver circuit.
[0044] Figure 2 A top view of a power semiconductor module 200 is shown, which, except for the differences described below, may be similar or identical to the power semiconductor module 110. The power semiconductor module 200 may be used in the power electronics system 100 instead of the power semiconductor module 110.
[0045] like Figure 2As shown, the power semiconductor module 200 includes a plurality of power semiconductor dies 150 coupled to a power electronic substrate 140 to provide a power circuit of the power semiconductor module 200. The power semiconductor module 200 also includes a first DC contact 210 and a second DC contact 220. The first DC contact 210 and the second DC contact 220 may include or consist of the same metal or metal alloy as the first load current contact 170. In particular, the first load current contact 170 and the first DC contact 210 and the second DC contact 220 may be components of the same lead frame.
[0046] Figure 3 1 shows a detailed view of the power semiconductor module 200, wherein the detailed view particularly shows the first load current contact 170. In addition, the plastic frame 160 of the power semiconductor module 200 may include an upper half frame and a lower half frame, wherein the plastic frame 160 of the power semiconductor module 200 may include an upper half frame and a lower half frame. Figure 3 The upper half frame is omitted and only the lower half frame 160' is shown.
[0047] like Figure 3 As shown, the first load current contact portion 170 may include a narrow portion 173, and the narrow portion 173 is configured to increase the current density of the load current flowing through the first load current contact portion 170. The narrow portion 173 may be arranged vertically below the position of the current sensor 130 (the position of the current sensor 130 is Figure 3 In this way, the measurement accuracy of the current sensor 130 can be improved.
[0048] Figure 4A A perspective view of another power electronics system 400 is shown, which may be similar or identical to the power electronics system 100 except for the differences described below. Figure 4B A perspective view of a power electronics system 400 is shown, wherein the driver board 120 is omitted in order to illustrate the power semiconductor modules 200 of the power electronics system 400 .
[0049] The power electronic system 400 may, for example, include three power semiconductor modules 200 , 200 ′ and 200 ″, which may, for example, be arranged side by side and may all be connected to the driver board 120 . The power electronic system 400 may, for example, be configured to provide a three-phase current.
[0050] The electrical connection structure between the driver board 120 and the power semiconductor modules 200, 200' and 200" may include an electrical connector, such as a pin 410. The pin 410 may, for example, be a press-fit pin. The mechanical connection structure between the driver board 120 and the power semiconductor modules 200, 200' and 200" may, for example, include a mechanical connector 420, such as a hollow heat pile. The mechanical connector 420 in the form of a hollow heat pile may, for example, help to properly align the driver board 120 relative to the power semiconductor modules 200, 200' and 200".
[0051] According to an example, the power electronic system 400 may further include a substrate 430 , wherein the power semiconductor modules 200 , 200 ′ and 200 ″ are arranged on the substrate 430 . The substrate 430 may, for example, be configured as (a part of) a heat sink and / or a heat dissipation device.
[0052] exist Figure 4B In the example shown, only the leftmost power semiconductor module 200 includes a recess 161 configured to receive a current sensor 130. However, one or both of the other power semiconductor modules 200', 200" may also include a recess 161. In other words, the power electronics system 400 may include two or even three current sensors 130, wherein a first one of the current sensors 130 is arranged at a first load current contact 170, a second one of the current sensors 130 is arranged at a second load current contact 170' and / or a third one of the current sensors 130 is arranged at a third load current contact 170".
[0053] like Figure 4B As shown, the plastic frame 160 may surround the middle portion of the first load current contact 170 on all sides. This may mean that the middle portion of the first load current contact 170 is electrically isolated at the side covered by the plastic frame 160 .
[0054] Figure 4C The current sensor 130 is shown (partially) arranged in a recess 161 of a plastic frame 160 .
[0055] Figure 5 A cross-sectional view of another power electronics system 500 is shown, which may be similar or identical to the power electronics system 100 or 400 except for the differences described below.
[0056] The power electronic system 500 includes at least one power semiconductor module 510 . The power semiconductor module 510 may be similar or identical to the power semiconductor module 110 or 200 , except that the plastic frame of the power semiconductor module 510 does not necessarily include the recess 161 .
[0057] The power semiconductor module 510 includes a power electronic substrate 140, a first spring element 520, and at least one power semiconductor die 150 arranged on and electrically coupled to a first side 141 of the power electronic substrate 140. The first spring element 520 is mechanically and electrically connected to the first side 141 of the power electronic substrate 140.
[0058] The power electronics system also includes a driver board 530 disposed above the power semiconductor module 510. The driver board 530 may be similar or identical to the driver board 120, except for the differences described below.
[0059] The driver board 530 has a first side 531 facing away from the power semiconductor module 510 and an opposite second side 532 facing the power semiconductor module 510 . The driver board 530 includes a driver circuit configured to drive a power circuit of at least one power semiconductor module 510 .
[0060] The first load current contact 540 is arranged on the first side 531 of the driver board 530 and is electrically coupled to the first spring element 520. For example, the first load current contact 540 and the spring element can be coupled via a solder joint or a welding joint. In addition to the first load current contact 540 being arranged on the driver board 530, the first load current contact 540 can be substantially similar or identical to the first load current contact 170.
[0061] The current sensor 130 is arranged on the second side 532 of the driver board 530 and is electrically coupled to the second side 532 of the driver board 530. Furthermore, the current sensor 130 is configured to detect a load current flowing through the first load current contact 540.
[0062] According to an example, the driver plate 530 comprises an opening through which the first spring element 520 extends in the driver plate 530 to the first side 531 of the driver plate 530 .
[0063] According to an example, the driver circuit of the driver board 530 and the power circuit of the power semiconductor module 510 are connected via one or more pins 410 (e.g. press-fit pins). According to an example, the power electronic system 500 further comprises a base plate 430. The power electronic system 500 may further comprise a first and a second DC contact, which may for example also be arranged on the first side 531 of the driver board 530 or may be arranged on the power electronic substrate 140. In case the DC contact is arranged on the driver board 530, the DC contact may for example be coupled to a further spring element of the power electronic system 500.
[0064] Figure 6is a flow chart of a method 600 for manufacturing a power semiconductor module. The method 600 may be used, for example, to manufacture the power semiconductor modules 110 , 200 , and 510 .
[0065] Method 600 includes: a process of providing a power electronic substrate including a first side at 601; a process of arranging at least one power semiconductor die on the first side of the power electronic substrate and electrically coupling at least one power semiconductor die to the first side of the power electronic substrate at 602; a process of arranging a plastic frame at the first side of the power electronic substrate at 603, the plastic frame defining an interior volume of the power semiconductor module such that the power semiconductor die is arranged in the interior volume; and a process of electrically connecting a first load current contact to the first side of the power electronic substrate at 604, such that the first load current contact is partially exposed from the plastic frame, the first load current contact including a first side facing away from the power electronic substrate and an opposite second side, wherein the plastic frame includes a recess located above the first side of the first load current contact, the recess being configured to receive a current sensor, and wherein the plastic frame is configured to electrically isolate the current sensor in the recess from the first load current contact.
[0066] Example
[0067] In the following, the power electronic system and the power semiconductor module are further explained using specific examples.
[0068] Example 1 is a power electronic system, the power electronic system including at least one power semiconductor module, the at least one power semiconductor module including: a power electronic substrate including a first side; at least one power semiconductor die arranged on the first side of the power electronic substrate and electrically coupled to the first side of the power electronic substrate; a plastic frame arranged at the first side of the power electronic substrate, the plastic frame defining an internal volume of the power semiconductor module, wherein the power semiconductor die is arranged in the internal volume; and a first load current contact portion electrically connected to the first side of the power electronic substrate and partially exposed from the plastic frame, the first load current contact portion including a first side facing away from the power electronic substrate and an opposite second side, wherein the plastic frame includes a recess located above the first side of the first load current contact portion. The power electronic system also includes a driver board arranged above the power semiconductor module, the driver board including a driver circuit, the driver circuit being configured to drive a power circuit of the at least one power semiconductor module. The power electronics system further comprises a current sensor arranged on a second side of the driver board facing the at least one power semiconductor module and electrically coupled to the second side of the driver board, the current sensor being configured to detect a load current flowing through the first load current contact, wherein the current sensor is at least partially arranged within the recess, and wherein the plastic frame is configured to electrically isolate the current sensor from the first load current contact.
[0069] Example 2 is the power electronics system of Example 1, wherein the current sensor is a surface mount device.
[0070] Example 3 is the power electronic system of Example 1 or 2, wherein there is a gap in a range of 0.25 mm to 0.8 mm between the current sensor and the bottom of the recess, the gap being measured perpendicular to the first side of the power electronic substrate.
[0071] Example 4 is the power electronic system of Example 3, wherein the gap is filled with one or more of silicone, foam, glue, or polymer.
[0072] Example 5 is the power electronic system of any of the preceding examples, wherein the plastic frame has a thickness over the first side of the first load current contact in the range of 0.8 mm to 1.5 mm.
[0073] Example 6 is a power electronic system of any one of the preceding examples, wherein a first load current contact is coupled to a first side of a power electronic substrate in a first plane, wherein the first load current contact is exposed from a plastic frame in a second plane, and wherein a vertical distance between the first plane and the second plane is in the range of 5 mm to 10 mm, in particular, wherein the vertical distance is 8 mm, and the vertical distance is measured perpendicular to the first side of the power electronic substrate.
[0074] Example 7 is a power electronic system of any one of Examples 1-5, wherein a first load current contact is coupled to a first side of a power electronic substrate in a first plane, wherein the first load current contact is exposed from a plastic frame in a second plane, wherein a current sensor is arranged in a third plane, and wherein a distance between the second plane and the third plane is one third or less of a distance between the first plane and the second plane.
[0075] Example 8 is the power electronic system of any of the preceding examples, wherein the first load current contact comprises a narrow portion below the current sensor, the narrow portion configured to increase a current density of the load current.
[0076] Example 9 is the power electronics system of any of the preceding examples, wherein the current sensor comprises a differential Hall sensor element.
[0077] Example 10 is the power electronic system of any of the preceding examples, wherein the plastic frame comprises a lower half shell and an upper half shell, wherein the first load current contact is arranged between the lower half shell and the upper half shell, and wherein the recess is arranged in the upper half shell.
[0078] Example 11 is a power semiconductor module, which includes: a power electronic substrate, which includes a first side; at least one power semiconductor die, which is arranged on the first side of the power electronic substrate and electrically coupled to the first side of the power electronic substrate; a plastic frame, which is arranged at the first side of the power electronic substrate, the plastic frame defines an internal volume of the power semiconductor module, wherein the power semiconductor die is arranged in the internal volume; and a first load current contact portion, which is electrically connected to the first side of the power electronic substrate and partially exposed from the plastic frame, the first load current contact portion including a first side facing away from the power electronic substrate and an opposite second side; wherein the plastic frame includes a recess located above the first side of the first load current contact portion, the recess is configured to receive a current sensor, and wherein the plastic frame is configured to electrically isolate the current sensor in the recess from the first load current contact portion.
[0079] Example 12 is the power semiconductor module of Example 11, wherein the first load current contact is a lead frame component, and wherein the plastic frame surrounds a middle portion of the first load current contact on all sides.
[0080] Example 13 is the power semiconductor module of Example 11 or 12, wherein the plastic frame comprises a lower half shell and an upper half shell, wherein the first load current contact is arranged between the lower half shell and the upper half shell, and wherein the recess is arranged in the upper half shell.
[0081] Example 14 is a power electronic system, the power electronic system including at least one power semiconductor module, the at least one power semiconductor module including: a power electronic substrate including a first side; at least one power semiconductor die arranged on the first side of the power electronic substrate and electrically coupled to the first side of the power electronic substrate; a first spring element mechanically and electrically connected to the first side of the power electronic substrate. The power electronic system also includes a driver board arranged above the power semiconductor module so that the first side of the driver board faces away from the power semiconductor module and the opposite second side faces the power semiconductor module, the driver board including a driver circuit configured to drive the power circuit of the at least one power semiconductor module. The power electronic system also includes a first load current contact portion arranged on the first side of the driver board and electrically coupled to the first spring element. The power electronic system also includes a current sensor arranged on the second side of the driver board and electrically coupled to the second side of the driver board, the current sensor configured to detect a load current flowing through the first load current contact portion.
[0082] Example 15 is the power electronic system of Example 14, wherein the first spring element extends through the opening in the driver board to the first side of the driver board.
[0083] Example 16 is the power electronics system of Example 14 or 15, wherein the current sensor is a surface mount device.
[0084] Although the present disclosure has been shown and described with respect to one or more embodiments, changes and / or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular, with respect to the various functions performed by the above-described components or structures (assemblies, devices, circuits, systems, etc.), unless otherwise indicated, the terms used to describe these components (including references to "means") are intended to correspond to any component or structure that performs the specific function of the component (e.g., functionally equivalent), even if not structurally equivalent to the disclosed structure that performs the functions in the exemplary embodiments of the present disclosure shown herein.
Claims
1. A power electronic system (100), comprising: At least one power semiconductor module (110), comprising: A power electronic substrate (140) comprising a first side (141), at least one power semiconductor die (150) arranged on and electrically coupled to the first side (141) of the power electronic substrate (140), a plastic frame (160) arranged at a first side (141) of the power electronic substrate (140), the plastic frame (160) defining an inner volume (111) of the power semiconductor module (110), the power semiconductor die (150) being arranged in the inner volume (111), and a first load current contact portion (170) electrically connected to a first side (141) of the power electronic substrate (140) and partially exposed from the plastic frame (160), the first load current contact portion (170) comprising a first side (171) facing away from the power electronic substrate (140) and an opposite second side (172), Wherein, the plastic frame (160) comprises a recess (161) located above the first side (171) of the first load current contact portion (170); a driver board (120) arranged above the power semiconductor module (110), the driver board (120) comprising a driver circuit configured to drive a power circuit of the at least one power semiconductor module (110); and a current sensor (130) arranged on a second side (122) of the driver board (120) facing the at least one power semiconductor module (110) and electrically coupled to the second side (122) of the driver board (120), the current sensor (130) being configured to detect a load current flowing through the first load current contact portion (170), The current sensor (130) is at least partially arranged in the recess (161), and the plastic frame (160) is configured to electrically isolate the current sensor (130) from the first load current contact portion (170).
2. The power electronic system (100) according to claim 1, wherein: The current sensor (130) is a surface mounted device.
3. The power electronic system (100) according to claim 1 or 2, wherein: There is a gap in the range of 0.25 mm to 0.8 mm between the current sensor (130) and the bottom of the recess (161), the gap being measured perpendicularly to the first side of the power electronic substrate.
4. The power electronic system (100) according to claim 3, wherein: The gap is filled with one or more of silicone, foam, glue or polymer.
5. The power electronic system (100) according to any one of the preceding claims, wherein: The plastic frame (160) has a thickness in the range of 0.8 mm to 1.5 mm above the first side (171) of the first load current contact (170).
6. The power electronic system (100) according to any one of the preceding claims, wherein: The first load current contact (170) is coupled to the first side (141) of the power electronic substrate (140) in a first plane, the first load current contact (170) is exposed from the plastic frame (160) in a second plane, and A vertical distance between the first plane and the second plane is in the range of 5 mm to 10 mm, in particular, the vertical distance is 8 mm, the vertical distance being measured perpendicular to the first side (141) of the power electronic substrate (140).
7. The power electronic system (100) according to any one of claims 1 to 5, wherein: The first load current contact (170) is coupled to the first side (141) of the power electronic substrate (140) in a first plane, the first load current contact (170) is exposed from the plastic frame (160) in a second plane, The current sensor (130) is arranged in a third plane, and A distance between the second plane and the third plane is one third or less of a distance between the first plane and the second plane.
8. The power electronic system (100) according to any one of the preceding claims, wherein: The first load current contact portion (170) includes a narrow portion (173) located below the current sensor (130), and the narrow portion (173) is configured to increase the current density of the alternating current.
9. The power electronic system (100) according to any one of the preceding claims, wherein: The current sensor (130) includes a differential Hall sensor element.
10. The power electronic system (100) according to any one of the preceding claims, wherein: The plastic frame (160) comprises a lower half shell and an upper half shell, the first load current contact portion (170) is arranged between the lower half shell and the upper half shell, and The recess (161) is arranged in the upper half shell.
11. A power semiconductor module (110), comprising: A power electronic substrate (140) comprising a first side (141), at least one power semiconductor die (150) arranged on and electrically coupled to the first side (141) of the power electronic substrate (140), a plastic frame (160) arranged at a first side (141) of the power electronic substrate (140), the plastic frame (160) defining an inner volume (111) of the power semiconductor module (110), the power semiconductor die (150) being arranged in the inner volume (111), and a first load current contact portion (170) electrically connected to a first side (141) of the power electronic substrate (140) and partially exposed from the plastic frame (160), the first load current contact portion (170) comprising a first side (171) facing away from the power electronic substrate (140) and an opposite second side (172), The plastic frame (160) comprises a recess (161) located above a first side (171) of the first load current contact portion (170), the recess (161) being configured to receive a current sensor, and the plastic frame (160) being configured to electrically isolate the current sensor in the recess (161) from the first load current contact portion (170).
12. The power semiconductor module (110) according to claim 11, wherein: The first load current contact portion (170) is a lead frame component, and The plastic frame (160) surrounds a middle portion of the first load current contact (170) on all sides.
13. The power semiconductor module (110) according to claim 11 or 12, wherein: The plastic frame (160) comprises a lower half shell and an upper half shell, the first load current contact portion (170) is arranged between the lower half shell and the upper half shell, and The recess (161) is arranged in the upper half shell.
14. A power electronic system (500), comprising: At least one power semiconductor module (510), comprising: A power electronic substrate (140) comprising a first side (141), at least one power semiconductor die (150) arranged on and electrically coupled to the first side (141) of the power electronic substrate (140), a first spring element (520) mechanically and electrically connected to a first side (141) of the power electronic substrate (140); A driver board (530) is arranged above the power semiconductor module (510) so that a first side (531) of the driver board (530) faces away from the power semiconductor module (510) and an opposite second side (532) faces the power semiconductor module (510), the driver board (530) comprising a driver circuit configured to drive a power circuit of the at least one power semiconductor module (510); a first load current contact (540) arranged on a first side (531) of the driver plate (530) and electrically coupled to the first spring element (520); and A current sensor (130) disposed on a second side (532) of the driver board (530) The current sensor (130) is disposed on and electrically coupled to a second side (532) of the driver board (530), and is configured to detect a load current flowing through the first load current contact (540).
15. The power electronic system (500) according to claim 14, wherein: The first spring element (520) extends through an opening in the driver plate (530) to a first side (531) of the driver plate (530).
16. The power electronic system (500) according to claim 14 or 15, wherein: The current sensor (130) is a surface mounted device.