Semiconductor device and forming method thereof

Abstract

Semiconductor devices and methods of forming the same are provided. The semiconductor device includes a semiconductor body and a transistor. The transistor includes a drain region in the semiconductor body, a first doped region in the drain region, a source region in the semiconductor body, a second doped region adjacent to the source region, and a third doped region between the first doped region and the second doped region. The third doped region includes a first portion having a first concentration of dopant, a second portion adjacent to the first portion and having a second concentration of dopant, a third portion adjacent to the second portion and having a third concentration of dopant, and a fourth portion adjacent to the third portion and having a fourth concentration of dopant. The first concentration is less than the second concentration. The second concentration is greater than the third concentration. The third concentration is less than the fourth concentration.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to semiconductor devices and methods of forming the same. Background Art

[0002] Semiconductor devices are used in a variety of electronic devices, such as mobile phones, laptops, desktops, tablets, watches, gaming systems, and various other industrial, commercial, and consumer electronic products. Semiconductor devices generally include a semiconductor portion and a wiring portion formed inside the semiconductor portion. Summary of the invention

[0003] An embodiment of the present disclosure provides a semiconductor device, comprising: a semiconductor body; and a transistor, the transistor comprising: a drain region located in the semiconductor body; a first doped region located in the drain region; a source region located in the semiconductor body; a second doped region adjacent to the source region; and a third doped region located between the first doped region and the second doped region, the third doped region comprising a first portion having a first concentration of dopant, a second portion adjacent to the first portion and having a second concentration of dopant, a third portion adjacent to the second portion and having a third concentration of dopant, and a fourth portion adjacent to the third portion and having a fourth concentration of dopant, wherein the third doped region has a gradient such that along a first line extending through the first portion, the second portion, the third portion, and the fourth portion: the first concentration is less than the second concentration; the second concentration is greater than the third concentration; and the third concentration is less than the fourth concentration.

[0004] Another embodiment of the present disclosure provides a method for forming a semiconductor device, comprising: forming a first doped region in a semiconductor body, wherein the first doped region is located in a drain region of a transistor; forming a second doped region in the semiconductor body, wherein the second doped region is adjacent to a source region of the transistor; forming a first portion of a third doped region in the semiconductor body between the first doped region and the second doped region; and forming a second portion of the third doped region in the semiconductor body between the first doped region and the second doped region, wherein: a portion of the semiconductor body separates the first portion from the second portion; a dopant of the portion of the semiconductor body has a first conductivity type; and a dopant of the third doped region has a second conductivity type different from the first conductivity type.

[0005] Another embodiment of the present disclosure provides a semiconductor device, including: a semiconductor body; and a transistor, the transistor including: a drain region located in the semiconductor body; a first doped region located in the drain region; a source region located in the semiconductor body; a second doped region adjacent to the source region; and a third doped region located between the first doped region and the second doped region, wherein the third doped region has a nonlinear sidewall such that a first portion of the sidewall is separated from a second portion of the sidewall by a portion of the semiconductor body. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1A to Figure 1B A semiconductor device at a stage of fabrication is shown in accordance with some embodiments.

[0008] FIG. 2A to FIG. 2B A semiconductor device at a stage of fabrication is shown in accordance with some embodiments.

[0009] FIG. 3A to FIG. 3B A semiconductor device at a stage of fabrication is shown in accordance with some embodiments.

[0010] FIG. 4A to FIG. 4C A semiconductor device at a stage of fabrication is shown in accordance with some embodiments.

[0011] FIG. 5A to FIG. 5C A semiconductor device at a stage of fabrication is shown in accordance with some embodiments.

[0012] FIG. 6A to FIG. 6B A semiconductor device at a stage of fabrication is shown in accordance with some embodiments.

[0013] FIG. 7A to FIG. 7B A semiconductor device at a stage of fabrication is shown in accordance with some embodiments.

[0014] FIG. 8A to FIG. 8E A semiconductor device at a stage of fabrication is shown in accordance with some embodiments.

[0015] Fig.8F A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0016] Fig. 9 A semiconductor device according to some embodiments is shown.

[0017] Fig.10 A semiconductor device according to some embodiments is shown.

[0018] Fig.11 A semiconductor device according to some embodiments is shown.

[0019] Fig.12 A semiconductor device according to some embodiments is shown.

[0020] Fig.13A A semiconductor device according to some embodiments is shown.

[0021] Fig. 13B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0022] Fig.14A A semiconductor device according to some embodiments is shown.

[0023] Fig. 14B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0024] Fig.15A A semiconductor device according to some embodiments is shown.

[0025] Fig. 15B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0026] Fig.16A A semiconductor device according to some embodiments is shown.

[0027] Fig. 16B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0028] Fig.17A A semiconductor device according to some embodiments is shown.

[0029] Fig. 17B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0030] Fig.18A A semiconductor device according to some embodiments is shown.

[0031] Fig.18B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0032] Fig.19 A semiconductor device according to some embodiments is shown.

[0033] Fig. 20 A semiconductor device according to some embodiments is shown.

[0034] Fig.21 A semiconductor device according to some embodiments is shown.

[0035] Fig.22A A semiconductor device according to some embodiments is shown.

[0036] Fig. 22B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0037] Fig.23A A semiconductor device according to some embodiments is shown.

[0038] Fig. 23B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0039] Fig.24A A semiconductor device according to some embodiments is shown.

[0040] Fig. 24B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0041] Fig.25A A semiconductor device according to some embodiments is shown.

[0042] Fig.25B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0043] Fig.26A A semiconductor device according to some embodiments is shown.

[0044] Fig.26B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0045] Fig.27A A semiconductor device according to some embodiments is shown.

[0046] Fig.27BA dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0047] Fig.28A A semiconductor device according to some embodiments is shown.

[0048] Fig.28B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0049] Fig.29A A semiconductor device according to some embodiments is shown.

[0050] Fig.29B A dopant concentration data structure is shown, including a curve indicating a concentration of a dopant along a line, according to some embodiments.

[0051] FIG. 30A to FIG. 30D A semiconductor device according to some embodiments is shown.

[0052] FIG. 31A to FIG. 31B A semiconductor device according to some embodiments is shown. DETAILED DESCRIPTION

[0053] The following disclosure provides several different embodiments or examples for implementing the different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly contacted, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the present disclosure may repeat reference numbers and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0054] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another element or component as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0055] The term "above" and the like may be used to describe that one element or component is vertically coincident with another element or component and is located at a higher elevation than the other element or component. For example, if a first element is located at a higher elevation than a second element and at least a portion of the first element is vertically coincident with at least a portion of the second element, the first element is above the second element.

[0056] The term "below" and the like may be used to describe that one element or component is vertically coincident with another element or component and is located at a lower height than the other element or component. For example, if a first element is located at a lower height than a second element and at least a portion of the first element vertically coincides with at least a portion of the second element, the first element is located below the second element.

[0057] The term “above” may be used to describe that one element or component is located at a higher elevation than another element or component. For example, if a first element is located at a higher elevation than a second element, the first element is above the second element.

[0058] The term “below” may be used to describe that one element or component is located at a lower height than another element or component. For example, if a first element is located at a lower height than a second element, the first element is below the second element.

[0059] In this disclosure, a source / drain region may be referred to as a source or a drain, individually or collectively depending on the context.

[0060] A semiconductor device has a semiconductor body and a transistor, the transistor including a drain region located in the semiconductor body, a first doped region located in the drain region, a source region located in the semiconductor body, a second doped region adjacent to the source region, and a third doped region located between the first doped region and the second doped region. In some embodiments, the third doped region includes a diffused third doped region. In some embodiments, the third doped region is formed by at least one of (i) implanting a dopant into a location of the semiconductor body to form a portion of the doped region, or (ii) performing an anneal on the semiconductor body. In some embodiments, the locations are spaced apart from each other so that a first portion of the doped region is separated from a second portion of the doped region by a portion of the semiconductor body. In some embodiments, one or more anneals cause the dopant of the doped region to diffuse to form the third doped region. In some embodiments, the third doped region has a gradient so that the concentration of the dopant varies along a line passing through the third doped region. In some embodiments, the third doped region has a nonlinear sidewall so that a first portion of the sidewall is separated from a second portion of the sidewall by a portion of the semiconductor body. In some embodiments, at least one of the third doped region having a gradient or the sidewall of the third doped region being nonlinear provides at least one of a reduction in the on-resistance (Ron) of the transistor or a reduction in at least one of the device size of the semiconductor device, the transistor size of the transistor, the transistor pitch, etc. In some embodiments, reducing the on-resistance of the transistor provides a reduction in power consumption of the transistor, and thus provides improved operating efficiency. With reduced power consumption, the semiconductor device operates more efficiently than other devices.

[0061] Figures 1A to 8E Semiconductor device 100 is shown at various stages of fabrication in accordance with some embodiments. Figure 1A , Figure 2A , Figure 3A , Figure 4A , Figure 5A , Fig. 6A , Fig. 7A and Fig. 8A A top view of a semiconductor device 100 is shown at various stages of fabrication. Figure 1B , Figure 2B , Figure 3B , Figure 4B , Figure 5B , Figure 6B , Figure 7B and Figure 8B They are shown along Figure 1A , Figure 2A , Figure 3A , Figure 4A , Figure 5A , Fig. 6A , Fig. 7A and Fig. 8A1 is a cross-sectional view of the semiconductor device 100 taken along line BB. Figure 5C and Fig. 8E They are shown along Figure 5A and Fig. 8A 1 is a cross-sectional view of the semiconductor device 100 taken along line CC.

[0062] In some embodiments, the semiconductor device 100 includes a transistor. The transistor includes a laterally diffused metal oxide semiconductor (LDMOS) transistor. Other transistor types of transistors are within the scope of the present disclosure, such as, but not limited to, field effect transistors (FETs), metal-oxide-semiconductor FETs (MOSFETs), metal-insulator-semiconductor FETs (MISFETs), metal-semiconductor FETs (MESFETs), and insulated gate FETs (IGFETs), insulated gate bipolar transistors (IGBTs), high electron mobility transistors (HEMTs), heterostructure FETs (HFETs), modulation doped FETs (MODFETs), or at least one of different types of transistors.

[0063] Figure 1A and Figure 1BA semiconductor device 100 according to some embodiments is shown. In some embodiments, the semiconductor device 100 includes a semiconductor body 102. The semiconductor body 102 includes at least one of a substrate, an epitaxial layer, a silicon-on-insulator (SOI) structure, a wafer, or a die formed from a wafer. The semiconductor body 102 includes at least one of silicon, germanium, carbide, arsenide, gallium, arsenic, phosphide, indium, antimonide, SiGe, SiC, GaAs, GaN, GaP, InGaP, InP, InAs, InSb, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, GaInAsP, or other suitable materials. The semiconductor body 102 includes at least one of single crystal silicon, crystalline silicon with a <100> crystal orientation, crystalline silicon with a <110> crystal orientation, crystalline silicon with a <111> crystal orientation, or other suitable materials. Other structures and / or configurations of the semiconductor body 102 are also within the scope of the present disclosure. In some embodiments, the semiconductor body 102 includes at least one of a dopant of a first conductivity type or a dopant of a second conductivity type. In some embodiments, the first conductivity type is p-type and the second conductivity type is n-type. In some embodiments, the semiconductor body 102 includes a p-type dopant, which includes at least one of a boron dopant, an aluminum dopant, a gallium dopant, a beryllium dopant, or other p-type dopant. In some embodiments, the semiconductor body 102 includes at least one of a p-type substrate or a p-type epitaxial layer. In some embodiments, the semiconductor body 102 includes an n-type dopant, which includes at least one of a nitrogen dopant, an arsenic dopant, a phosphorus dopant, or other n-type dopant. In some embodiments, the semiconductor body 102 includes at least one of an n-type substrate or an n-type epitaxial layer.

[0064] In some embodiments, the semiconductor device 100 includes at least one of the first doped region 106, the second doped region 108, the fourth doped region 110, the fifth doped region 104, the sixth doped region 112, the seventh doped region 114, or the eighth doped region 116. In some embodiments, the semiconductor device 100 includes a drain region 120 (an example of which is shown in FIG. Figure 1B The drain region 120 includes at least one of (i) at least some of the fifth doped region 104, (ii) at least some of the first doped region 106, (iii) at least some of the fourth doped region 110, or (iv) other portions of the semiconductor device 100. In some embodiments, the semiconductor device 100 includes a source region 122 (an example of which is shown in FIG. Figure 1BThe source region 122 includes at least one of (i) at least some of the sixth doped region 112, (ii) at least some of the seventh doped region 114, or (iii) other portions of the semiconductor device 100. In some embodiments, the semiconductor device 100 includes a channel region 124 (an example of which is shown in FIG. Figure 1B ), the channel region 124 includes at least one of (i) at least some of the second doped region 108 or (ii) other portions of the semiconductor device 100 .

[0065] In some embodiments, the dopant of the first doped region 106 includes at least one of a dopant of the first conductivity type or a dopant of the second conductivity type. In some embodiments, the dopant is introduced into the first doped region 106 by at least one of ion implantation, molecular diffusion, or other suitable techniques. In some embodiments, the first doped region 106 includes a p-type dopant, which includes at least one of a boron dopant, an aluminum dopant, a gallium dopant, a beryllium dopant, or other p-type dopant. In some embodiments, the first doped region 106 includes an n-type dopant, which includes at least one of a nitrogen dopant, an arsenic dopant, a phosphorus dopant, or other n-type dopant. In some embodiments, the first doped region 106 includes a shallow well, such as a shallow n-well (SH_N) or a shallow p-well (SH_P).

[0066] In some embodiments, the dopant of the second doped region 108 includes at least one of a dopant of the first conductivity type or a dopant of the second conductivity type. In some embodiments, the dopant is introduced into the second doped region 108 by at least one of ion implantation, molecular diffusion, or other suitable techniques. In some embodiments, the second doped region 108 includes a p-type dopant, which includes at least one of a boron dopant, an aluminum dopant, a gallium dopant, a beryllium dopant, or other p-type dopant. In some embodiments, the second doped region 108 includes an n-type dopant, which includes at least one of a nitrogen dopant, an arsenic dopant, a phosphorus dopant, or other n-type dopant. In some embodiments, the second doped region 108 includes a high voltage body region, such as a high voltage p body (HVPB) region or a high voltage n body (HVNB) region.

[0067] In some embodiments, the dopant of the fourth doping region 110 includes at least one of a dopant of the first conductivity type or a dopant of the second conductivity type. In some embodiments, the dopant is introduced into the fourth doping region 110 by at least one of ion implantation, molecular diffusion, or other suitable techniques. In some embodiments, the fourth doping region 110 includes a p-type dopant, which includes at least one of a boron dopant, an aluminum dopant, a gallium dopant, a beryllium dopant, or other p-type dopant. In some embodiments, the fourth doping region 110 includes an n-type dopant, which includes at least one of a nitrogen dopant, an arsenic dopant, a phosphorus dopant, or other n-type dopant. In some embodiments, the dopant of the fourth doping region 110 has the same conductivity type as the dopant of the first doping region 106, wherein the concentration of the dopant of the fourth doping region 110 is greater than the concentration of the dopant of the first doping region 106.

[0068] In some embodiments, the dopant of the fifth doping region 104 includes at least one of a dopant of the first conductivity type or a dopant of the second conductivity type. In some embodiments, the dopant is introduced into the fifth doping region 104 by at least one of ion implantation, molecular diffusion, or other suitable techniques. In some embodiments, the fifth doping region 104 includes a p-type dopant, which includes at least one of a boron dopant, an aluminum dopant, a gallium dopant, a beryllium dopant, or other p-type dopant. In some embodiments, the fifth doping region 104 includes an n-type dopant, which includes at least one of a nitrogen dopant, an arsenic dopant, a phosphorus dopant, or other n-type dopant. In some embodiments, the fifth doping region 104 includes a high voltage well, such as a high voltage n-well (HVNW) or a shallow p-well (HVPW).

[0069] In some embodiments, the dopant of the sixth doping region 112 includes at least one of a dopant of the first conductivity type or a dopant of the second conductivity type. In some embodiments, the dopant is introduced into the sixth doping region 112 by at least one of ion implantation, molecular diffusion, or other suitable techniques. In some embodiments, the sixth doping region 112 includes a p-type dopant, which includes at least one of a boron dopant, an aluminum dopant, a gallium dopant, a beryllium dopant, or other p-type dopant. In some embodiments, the sixth doping region 112 includes an n-type dopant, which includes at least one of a nitrogen dopant, an arsenic dopant, a phosphorus dopant, or other n-type dopant. In some embodiments, the dopant of the sixth doping region 112 has a different conductivity type than the dopant of the second doping region 108. In some embodiments, a portion of the semiconductor body 102 is counter doped to form the sixth doping region 112.

[0070] In some embodiments, the dopant of the seventh doping region 114 includes at least one of a dopant of the first conductivity type or a dopant of the second conductivity type. In some embodiments, the dopant is introduced into the seventh doping region 114 by at least one of ion implantation, molecular diffusion, or other suitable techniques. In some embodiments, the seventh doping region 114 includes a p-type dopant, which includes at least one of a boron dopant, an aluminum dopant, a gallium dopant, a beryllium dopant, or other p-type dopant. In some embodiments, the seventh doping region 114 includes an n-type dopant, which includes at least one of a nitrogen dopant, an arsenic dopant, a phosphorus dopant, or other n-type dopant. In some embodiments, the dopant of the seventh doping region 114 has the same conductivity type as the dopant of the second doping region 108, wherein the concentration of the dopant of the seventh doping region 114 is greater than the concentration of the dopant of the second doping region 108.

[0071] In some embodiments, the dopant of the eighth doping region 116 includes at least one of a dopant of the first conductivity type or a dopant of the second conductivity type. In some embodiments, the dopant is introduced into the eighth doping region 116 by at least one of ion implantation, molecular diffusion, or other suitable techniques. In some embodiments, the eighth doping region 116 includes a p-type dopant, which includes at least one of a boron dopant, an aluminum dopant, a gallium dopant, a beryllium dopant, or other p-type dopant. In some embodiments, the eighth doping region 116 includes an n-type dopant, which includes at least one of a nitrogen dopant, an arsenic dopant, a phosphorus dopant, or other n-type dopant. In some embodiments, the eighth doping region 116 includes a buried layer, such as an n-type buried layer (NBL) or a p-type buried layer (PBL).

[0072] Figure 2A and Figure 2B A first photoresist 202 is shown formed over a semiconductor body 102 in accordance with some embodiments. The first photoresist 202 is located above the semiconductor body 102. The first photoresist 202 is in direct or indirect contact with a top surface of the semiconductor body 102. When the first component is in indirect contact with the second component, one or more additional components may be formed between the first component and the second component. The first photoresist 202 is formed by at least one of physical vapor deposition (PVD), sputtering, chemical vapor deposition (CVD), low pressure CVD (LPCVD), atomic layer chemical vapor deposition (ALCVD), ultra-high vacuum CVD (UHVCVD), reduced pressure CVD (RPCVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), spin coating, growth, or other suitable techniques.

[0073] In some embodiments, the first photoresist 202 includes a photosensitive material, wherein the properties (such as solubility) of the first photoresist 202 are affected by light. The first photoresist 202 is a negative photoresist or a positive photoresist. Regarding the negative photoresist, when irradiated by a light source, the region of the negative photoresist becomes insoluble, so that a solvent is applied to the negative photoresist during the subsequent development stage to remove the unirradiated region of the negative photoresist. Therefore, the pattern formed in the negative photoresist is the negative of the pattern defined by the opaque region of the template (such as a mask) between the light source and the negative photoresist. In the positive photoresist, the irradiated region of the positive photoresist becomes soluble and is removed by applying a solvent during development. Therefore, the pattern formed in the positive photoresist is a positive image of the opaque region of the template (such as a mask) between the light source and the positive photoresist.

[0074] Figure 3A and Figure 3B A first patterned photoresist 304 formed from the first photoresist 202 is shown according to some embodiments. In some embodiments, the first patterned photoresist 304 defines a first set of openings. In some embodiments, the first set of openings includes at least one of a first opening 302a, a second opening 302b, a third opening 302c, a fourth opening 302d, a fifth opening 302e, a sixth opening 302f, a seventh opening 302g, an eighth opening 302h, a ninth opening 302i, a tenth opening 302j, an eleventh opening 302k, a twelfth opening 302l, a thirteenth opening 302m, a fourteenth opening 302n, or one or more other openings. Although Figure 3A 14 openings defined in the first patterned photoresist 304 are depicted in FIG, but any number of openings in the first patterned photoresist 304 is contemplated. According to some embodiments, Figure 3B The seventh opening 302g and the eighth opening 302h are depicted in FIG. FIG. 3A to FIG. 3B Other arrangements than the example arrangements shown are within the scope of the present disclosure.

[0075] FIG. 4A to FIG. 4C The formation of the third doped region 401 using the first patterned photoresist 304 is shown in accordance with some embodiments. Figure 4C FIG. 4 shows a top portion 404 ( FIG. 4B ) without the semiconductor device 100 according to some embodiments. Figure 4B4 ) to illustrate portions 402a-402n of a third doped region 401. In some embodiments, the third doped region 401 is formed by performing a first doping process including at least one of ion implantation, molecular diffusion, or other suitable techniques. In some embodiments, forming the third doped region 401 includes implanting a distribution of dopants into locations of the semiconductor body 102 to form portions of the third doped region 401. In some embodiments, the distribution of dopants is implanted into the locations through openings of the first set of openings defined by the first patterned photoresist 304.

[0076] In some embodiments, the dopant of the third doping region 401 includes at least one of a dopant of the first conductivity type or a dopant of the second conductivity type. In some embodiments, the dopant is introduced into the third doping region 401 by at least one of ion implantation, molecular diffusion, or other suitable techniques. In some embodiments, the third doping region 401 includes a p-type dopant, which includes at least one of a boron dopant, an aluminum dopant, a gallium dopant, a beryllium dopant, or other p-type dopant. In some embodiments, the third doping region 401 includes an n-type dopant, which includes at least one of a nitrogen dopant, an arsenic dopant, a phosphorus dopant, or other n-type dopant. In some embodiments, the third doping region 401 includes at least one of a fluoride dopant, a sulfur dopant, or other dopant. In some embodiments, the third doping region 401 includes a double diffusion region, such as a p-type double diffusion region (PDD) or an n-type double diffusion region (NDD). In some embodiments, the double diffusion region is a region doped with at least two types of dopants, such as a combination of at least two n-type dopants, at least two p-type dopants, an n-type dopant, and a p-type dopant.

[0077] In some embodiments, the third doped region 401 includes the first group of portions. Figure 4C ), the first group of portions includes at least one of a first portion 402a of the third doping region 401, a second portion 402b of the third doping region 401, a third portion 402c of the third doping region 401, a fourth portion 402d of the third doping region 401, a fifth portion 402e of the third doping region 401, a sixth portion 402f of the third doping region 401, a seventh portion 402g of the third doping region 401, an eighth portion 402h of the third doping region 401, a ninth portion 402i of the third doping region 401, a tenth portion 402j of the third doping region 401, an eleventh portion 402k of the third doping region 401, a twelfth portion 402l of the third doping region 401, a thirteenth portion 402m of the third doping region 401, a fourteenth portion 402n of the third doping region 401, or one or more other portions. Although Figure 4C 14 portions of the first set of portions are depicted, but any number of portions of the first set of portions is contemplated. FIG. 4A to FIG. 4C Other arrangements of the third doped region 401 beyond the example arrangement shown are within the scope of the present disclosure.

[0078] In some embodiments, the first doping process (performed to form the third doped region 401) includes directing a dopant through one or more portions of the top surface of the semiconductor body 102. In some embodiments, the first patterned photoresist 304 inhibits the dopant from entering the portions of the top surface of the semiconductor body 102 covered by the first patterned photoresist 304. In some embodiments, the first doping process includes directing a dopant through portions of the top surface of the semiconductor body 102 exposed by the openings of the first set of openings defined by the first patterned photoresist 304. In some embodiments, the depth of penetration of the dopant into the semiconductor body 102 in the first doping process is controlled by increasing or decreasing the voltage and / or the injection energy level used to direct the dopant into the semiconductor device 100.

[0079] In some embodiments, the first doping process includes at least one of the following: (i) a first implantation operation, including implanting a first distribution of dopants into a first location of the semiconductor body 102 to form a first portion 402a of the third doped region 401, (ii) a second implantation operation, including implanting a second distribution of dopants into a second location of the semiconductor body 102 to form a second portion 402b of the third doped region 401, (iii) a third implantation operation, including implanting a third distribution of dopants into a third location of the semiconductor body 102 to form a third portion 402c of the third doped region 401, (iv) a fourth implantation operation, including implanting a third distribution of dopants into a third location of the semiconductor body 102 to form a third portion 402c of the third doped region 401. (i) a dopant of the fourth distribution is injected into the semiconductor body 102 at a fourth location to form a fourth portion 402d of the third doped region 401; (ii) a dopant of the fifth distribution is injected into the semiconductor body 102 at a fifth location to form a fifth portion 402e of the third doped region 401; (iii) a dopant of the seventh distribution is injected into the semiconductor body 102 at a sixth location to form a sixth portion 402f of the third doped region 401; (iv) a dopant of the seventh distribution is injected into the semiconductor body 102 at a seventh location to form a sixth portion 402f of the third doped region 401; and (v) a dopant of the seventh distribution is injected into the semiconductor body 102 at a seventh location to form a sixth portion 402g of the third doped region 401. Figure 3B ) to form a seventh portion 402g ( Figure 4B and Figure 4C ), (viii) an eighth implantation operation, comprising implanting an eighth distribution of dopants into an eighth location 306h of the semiconductor body 102 ( Figure 3B ), to form the eighth portion 402h ( Figure 4B and Figure 4C), (ix) a ninth implantation operation, comprising implanting a ninth distribution of dopants into a ninth location of the semiconductor body 102 to form a ninth portion 402i of the third doped region 401, (x) a tenth implantation operation, comprising implanting a tenth distribution of dopants into a tenth location of the semiconductor body 102 to form a tenth portion 402j of the third doped region 401, (xi) an eleventh implantation operation, comprising implanting a eleventh distribution of dopants into an eleventh location of the semiconductor body 102 to form an eleventh portion 402k of the third doped region 401, (xii) a twelfth implantation operation, comprising implanting a twelfth distribution of dopants into a twelfth location of the semiconductor body 102 to form an eleventh portion 402k of the third doped region 401 The steps of: forming a twelfth portion 402l of the third doped region 401, (xiii) a thirteenth implantation operation including implanting a thirteenth distribution of dopants into a thirteenth location of the semiconductor body 102 to form a thirteenth portion 402m of the third doped region 401, (xiv) a fourteenth implantation operation including implanting a fourteenth distribution of dopants into a fourteenth location of the semiconductor body 102 to form a fourteenth portion 402n of the third doped region 401, or (xv) one or more other implantation operations including implanting one or more other distributions of dopants into one or more other locations of the semiconductor body 102 to form one or more other portions of the third doped region 401. In some embodiments, at least some implantation operations of the first doping process are performed simultaneously, such as where the first implantation operation and the second implantation operation are performed simultaneously. In some embodiments, at least some implantation operations of the first doping process are performed sequentially, such as where the first implantation operation is performed after or before the second implantation operation. In some embodiments, at least one of the first position, the second position, the third position, the fourth position, the fifth position, the sixth position, the seventh position, the eighth position, the ninth position, the tenth position, the eleventh position, the twelfth position, the thirteenth position, or the fourteenth position is counter-doped by a first doping process to form a third doping region 401. In some embodiments, the concentration of the dopant in the third doping region 401 is between about 10E+11 and about 99E+15.

[0080] In some embodiments, portions of the third doped regions 401 are arranged in a matrix arrangement including a first set of rows and a first set of columns. In some embodiments, the first set of rows ( Figure 4C 402a and 402b), a second row 410b, a third row 410c, a fourth row 410d, a fifth row 410e, a sixth row 410f, and a seventh row 410g. Embodiments are contemplated in which the first set of rows includes only a single row or any other number of rows. In some embodiments, the first set of columns ( Figure 4C 4 and 5. The first set of columns 408a and 408b are shown in FIG. ... Embodiments in which the first set of columns includes only a single column or any other number of columns are contemplated.

[0081] In some embodiments, at least some of the first group of portions of the third doped region 401 are coplanar. In some embodiments, at least some of the first group of portions of the third doped region 401 are spaced apart from each other. In some embodiments, the eleventh portion 402k (of the sixth row 410f) is spaced apart from the thirteenth portion 402m (of the seventh row 410g) by a distance E( Figure 4C and Figure 5C 412 (shown in FIG. 4 ). In some embodiments, the distance E is greater than zero. In some embodiments, the distance E corresponds to a range of distances from a first minimum distance to a first maximum distance. In some embodiments, the first minimum distance is greater than zero. In some embodiments, the first maximum distance is at most about 1 micron greater than the first minimum distance. In some embodiments, each pair of adjacent portions in a column of the first set of columns is spaced apart from each other by about the distance E (and / or a distance between about the first minimum distance and about the first maximum distance). In some embodiments, the distance E corresponds to a distance between two adjacent portions of the first set of portions along the first horizontal axis 412 ( Figure 4C In some embodiments, among pairs of adjacent portions (of the first set of portions) that are separated from each other along the first horizontal axis 412, some or all of the pairs are separated from each other by about the distance E (and / or a distance between about the first minimum distance and about the first maximum distance).

[0082] In some embodiments, the seventh portion 402g (of the fourth row 410d) is spaced apart from the eighth portion 402h (of the fourth row 410d) by a distance C( Figure 4B and Figure 4C ). In some embodiments, the seventh portion 402g is separated from the eighth portion 402h by a portion 418 of the semiconductor body 102. In some embodiments, the dopant of the portion 418 of the semiconductor body 102 has a different conductivity type than the dopant of the third doped region 401, such as where the dopant of the portion 418 is an n-type dopant and the dopant of the third doped region 401 is a p-type dopant, or where the dopant of the portion 418 is a p-type dopant and the dopant of the third doped region 401 is an n-type dopant. In some embodiments, the distance C is greater than zero. In some embodiments, the distance C corresponds to a distance range from a second minimum distance to a second maximum distance. In some embodiments, the second minimum distance is greater than zero. In some embodiments, the second maximum distance is at most about 1 micron greater than the second minimum distance. In some embodiments, each pair of adjacent portions in a row of the first set of rows is spaced apart from each other by about the distance C (and / or a distance between about the second minimum distance and about the second maximum distance). In some embodiments, the distance C corresponds to a distance between two adjacent portions of the first set of portions along the second horizontal axis 414 ( Figure 4CIn some embodiments, among pairs of adjacent portions (of the first set of portions) that are separated from each other along the second horizontal axis 414, some or all of the pairs are separated from each other by about the distance C (and / or a distance between about the second minimum distance and about the second maximum distance).

[0083] In some embodiments, ( Figure 4C The length of the seventh portion 402g of the fourth row 410d is B' ( Figure 4B and Figure 4C ). In some embodiments, the length B' is greater than zero. In some embodiments, the length B' corresponds to a range of lengths from a first minimum length to a first maximum length. In some embodiments, the first minimum length is greater than zero. In some embodiments, the first maximum length is at most about 1 micron greater than the first minimum length. In some embodiments, some or all of the first set of portions of the third doped region 401 have a length B' (and / or a length along the second horizontal axis 414 between about the first minimum length and about the first maximum length). In some embodiments, the length B' corresponds to a length of a portion of the first set of portions along the second horizontal axis 414 ( Figure 4C ).

[0084] In some embodiments, ( Figure 4C The ninth portion 402i of the fifth row 410e is shown to have a width D'( Figure 4C and Figure 5C 412). In some embodiments, the width D' is greater than zero. In some embodiments, the width D' corresponds to a width range from a first minimum width to a first maximum width. In some embodiments, the first minimum width is greater than zero. In some embodiments, the first maximum width is at most about 1 micron greater than the first minimum width. In some embodiments, some or all of the first group of portions of the third doped region 401 have a width D' (and / or a width along the first horizontal axis 412 between about the first minimum width and about the first maximum width). In some embodiments, the width D' corresponds to a length of a portion of the first group of portions along the first horizontal axis 412 ( Figure 4C ).

[0085] In some embodiments, the seventh portion 402g has a height A' ( Figure 4B). In some embodiments, height A' is greater than zero. In some embodiments, height A' corresponds to a range of heights from a first minimum height to a first maximum height. In some embodiments, the first minimum height is greater than zero. In some embodiments, the first maximum height is at most about 1 micron greater than the first minimum height. In some embodiments, some or all of the first set of portions of the third doped region 401 have height A' (and / or a height between about the first minimum height and about the first maximum height). In some embodiments, height A' corresponds to a length of a portion of the first set of portions along the vertical axis 416 ( Figure 4B ).

[0086] In some embodiments, the seventh portion 402g has a depth A ( Figure 4B ). In some embodiments, the depth A is greater than zero. In some embodiments, the depth A corresponds to a depth range from a first minimum depth to a first maximum depth. In some embodiments, the first minimum depth is greater than zero. In some embodiments, the first maximum depth is at most about 1 micron greater than the first minimum depth. In some embodiments, some or all of the first group of portions of the third doped region 401 have a depth A (and / or a depth between about the first minimum depth and about the first maximum depth). In some embodiments, the depth A corresponds to a distance between a top surface of the semiconductor body 102 and a portion of the first group of portions (e.g., along the vertical axis 416). In some embodiments, the depth A or height A' (of one or more portions of the first group of portions of the third doped region 401) is controlled by controlling at least one of a voltage, an implantation energy level, an implantation dose, etc. of the first doping process. Figure 4B At least one of the above (shown in FIG. 1 ).

[0087] In some embodiments, the third doped region 401 has a doped region length B ( Figure 4C ), such as the total length of the third doped region 401 along the second horizontal axis 414. In some embodiments, the third doped region 401 has a doped region width D ( Figure 4C ), such as the total length of the third doped region 401 along the first horizontal axis 412.

[0088] In some embodiments, a first doping process (performed to form the third doped region 401) is performed according to a doping map. In some embodiments, the doping map indicates the size of the first group of portions of the third doped region 401. In some embodiments, the doping map is generated based on at least one of the following: (i) a first design function: 0<A' / (A'+A)<1, where A' corresponds to a height A' of one, some, or all of the first group of portions of the third doped region 401, and A corresponds to a depth A of one, some, or all of the first group of portions of the third doped region 401, (ii) a second design function: 0<M×B' / [M×B'+(M-1)×C]<1, where M corresponds to the number of columns of the first group of columns, and C corresponds to the distance C( Figure 4B and Figure 4C ), and / or B' corresponds to the length B' (along the second horizontal axis 414) of one, some or all of the first set of portions of the third doped region 401, or (iii) a third design function: 0<N×D' / [N×D'+(N-1)×E]≤1, where N corresponds to the number of rows of the first set of rows, and E corresponds to the distance E( Figure 4C ), and / or D' corresponds to a width D' (along the first horizontal axis 412) of one, some, or all of the first group of portions of the third doped region 401. In some embodiments, the dimensions indicated by the doping map for the third doped region 401 satisfy at least one of the first design function, the second design function, or the third design function. In some embodiments, the dimensions of the third doped region 401 satisfy at least one of the first design function, the second design function, or the third design function.

[0089] exist Figure 4B , portions 402g and 402h of the third doped region are shown as rectangles (relative to Figure 4B Other shapes of the portion of the third doped region (such as at least one of a square, a triangle, a rectangle, a trapezoid, etc.) (relative to Figure 4B sectional view) is within the scope of the present disclosure.

[0090] exist Figure 4C In FIG. 1 , portions 402a-402n of the third doped region are shown as rectangles (relative to Figure 4C Other shapes of the portion of the third doped region (such as at least one of a square, a triangle, a rectangle, a trapezoid, etc.) (relative to Figure 4C Top view of ) is within the scope of the present disclosure.

[0091] FIG. 5A to FIG. 5CThe removal of the first patterned photoresist 304 according to some embodiments is shown. In some embodiments, after forming the third doped region 401, the first patterned photoresist 304 is removed. The first patterned photoresist 304 is removed by at least one of a washing process (to wash away the first patterned photoresist 304, to strip off the first patterned photoresist 304, to etch the first patterned photoresist), chemical mechanical planarization (CMP), or other suitable techniques.

[0092] exist Figure 5C , portions 402b, 402d, 402f, 402h, 402j, 402l, and 402n of the third doped region are shown as rectangles (relative to Figure 5C Other shapes of the portion of the third doped region (such as at least one of a square, a triangle, a rectangle, a trapezoid, etc.) (relative to Figure 5C sectional view) is within the scope of the present disclosure.

[0093] Fig. 6A and Figure 6B A first gate structure formed over the semiconductor body 102 is shown in accordance with some embodiments. The first gate structure is located above the semiconductor body 102. The first gate structure is in direct contact or in indirect contact with a top surface of the semiconductor body 102. In some embodiments, the first gate structure is located above the third doped region 401. In some embodiments, the first gate structure includes at least one of a gate electrode 604, a gate dielectric layer 608, a first gate spacer 602, or a second gate spacer 606. In some embodiments, the gate dielectric layer 608 separates the gate electrode 604 from the semiconductor body 102.

[0094] In some embodiments, the gate dielectric layer 608 is formed by at least one of PVD, sputtering, CVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. In some embodiments, the gate dielectric layer 608 includes at least one of a semiconductor material, an oxide, silicon dioxide, Al2O3, HfO, HfO2, ZrO, ZrO2, ZrSiO, YO, Y2O3, LaO, La2O5, GdO, Gd2O5, TiO, TiO2, TiSiO, TaO, Ta2O5, TaSiO, HfErO, HfLaO, HfYO, HfGdO, HfAlO, HfZrO, HfTiO, HfTaO, HfSiO, SrTiO, ZrSiON, HfZrTiO, HfZrSiON, HfZrLaO, HfZrAlO, or other suitable materials. In some embodiments, the gate electrode 604 is formed over the gate dielectric layer 608 by at least one of PVD, sputtering, CVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques. In some embodiments, the gate electrode 604 includes at least one of polysilicon, one or more metals, or other suitable materials. In some embodiments, at least one of the first gate spacer 602 or the second gate spacer 606 is formed by at least one of PVD, sputtering, CVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques.

[0095] Fig. 7A and Figure 7B A first protection structure 702 is shown formed over at least one of the semiconductor body 102 or the first gate structure in accordance with some embodiments. The first protection structure 702 is located above the semiconductor body 102. The first protection structure 702 is in direct or indirect contact with a top surface of the semiconductor body 102. In some embodiments, the first protection structure 702 includes at least one of a resist protective oxide (RPO) or other suitable materials. In some embodiments, the first protection structure 702 is formed by at least one of PVD, sputtering, CVD, LPCVD, ALCVD, UHVCVD, RPCVD, ALD, MBE, LPE, spin coating, growth, or other suitable techniques.

[0096] In some embodiments, the semiconductor body 102 is subjected to one or more thermal processes while the third doped region 401 is in the semiconductor body 102. In some embodiments, the thermal process of the one or more thermal processes includes performing an anneal on the semiconductor body 102. In some embodiments, the thermal energy introduced into the semiconductor body 102 and / or the third doped region 401 via the one or more thermal processes causes diffusion of dopants of the third doped region 401, including migration of dopants of the third doped region 401 from one or more first locations in the semiconductor body 102 to one or more second locations. In some embodiments, the diffusion and / or migration of dopants of the third doped region 401 via the one or more thermal processes forms a diffused third doped region 801 ( FIG. 8B to FIG. 8E In some embodiments, diffusion and / or migration of dopants of the third doping region 401 via one or more thermal processes causes the third doping region 401 to expand into a diffused third doping region 801 .

[0097] FIG. 8A to FIG. 8E 801 is shown as a diffused third doped region 801 formed by the third doped region 401 according to some embodiments. In some embodiments, the diffused third doped region 801 includes at least one of the first group of diffused portions or the second group of diffused portions located above the first group of diffused portions. In some embodiments, the first group of diffused portions includes diffused portions 802a-802n ( Figure 8C ). Figure 8C FIG. 8 shows a top portion 806 ( FIG. 8A ) without the semiconductor device 100 according to some embodiments. Figure 8B 1 ) to show the diffused portions 802a-802n of the diffused third doped region 801. In some embodiments, the second group of diffused portions includes diffused portions 804a-804n ( Fig.8D ). Fig.8D FIG. 8 shows a top portion 808 ( FIG. 8A ) without the semiconductor device 100 according to some embodiments. Figure 8B ) is a top view of the semiconductor device 100 to show the diffused portions 804a-804n of the diffused third doped region 801.

[0098] In some embodiments, the first set of diffused portions includes at least one of the following: (i) a diffused portion 802a ( 802b ) formed by diffusion of the first portion 402a of the third doped region 401 (eg, by one or more thermal processes); Figure 8C), (ii) a diffusion portion 802b formed by diffusion of the second portion 402b of the third doping region 401 (e.g., by one or more thermal processes), (iii) a diffusion portion 802c formed by diffusion of the third portion 402c of the third doping region 401 (e.g., by the one or more thermal processes), (iv) a diffusion portion 802d formed by diffusion of the fourth portion 402d of the third doping region 401 (e.g., by one or more thermal processes), (v) a diffusion portion 802e formed by diffusion of the fifth portion 402e of the third doping region 401 (e.g., by one or more thermal processes), (vi) a diffusion portion 802f formed by diffusion of the sixth portion 402f of the third doping region 401 (e.g., by one or more thermal processes), (vii) a diffusion portion 802g formed by diffusion of the seventh portion 402g of the third doping region 401 (e.g., by one or more thermal processes), (viii) a diffusion portion 802h formed by diffusion of the eighth portion 402h of the third doping region 401 (e.g., by one or multiple thermal processes), (ix) the diffusion portion 802i formed by diffusion of the ninth portion 402i of the third doping region 401 (e.g., by one or more thermal processes), (x) the diffusion portion 802j formed by diffusion of the tenth portion 402j of the third doping region 401 (e.g., by one or more thermal processes), (xi) the diffusion portion 802k formed by diffusion of the eleventh portion 402k of the third doping region 401 (e.g., by one or more thermal processes), (xii) the diffusion portion 802l formed by diffusion of the twelfth portion 402l of the third doping region 401 (e.g., by one or more thermal processes), (xiii) the diffusion portion 802m formed by diffusion of the thirteenth portion 402m of the third doping region 401 (e.g., by one or more thermal processes), (xiv) the diffusion portion 802n formed by diffusion of the fourteenth portion 402n of the third doping region 401 (e.g., by one or more thermal processes), or (xv) one or more other diffusion portions.

[0099] In some embodiments, the second set of diffused portions includes at least one of the following: (i) a diffused portion 804a ( Fig.8D), (ii) a diffusion portion 804b formed by diffusion of the second portion 402b of the third doping region 401 (e.g., by one or more thermal processes), (iii) a diffusion portion 804c formed by diffusion of the third portion 402c of the third doping region 401 (e.g., by one or more thermal processes), (iv) a diffusion portion 804d formed by diffusion of the fourth portion 402d of the third doping region 401 (e.g., by one or more thermal processes), (v) a diffusion portion 804e formed by diffusion of the fifth portion 402e of the third doping region 401 (e.g., by one or more thermal processes), (vi) a diffusion portion 804f formed by diffusion of the sixth portion 402f of the third doping region 401 (e.g., by one or more thermal processes), (vii) a diffusion portion 804g formed by diffusion of the seventh portion 402g of the third doping region 401 (e.g., by one or more thermal processes), (viii) a diffusion portion 804h formed by diffusion of the eighth portion 402h of the third doping region 401 (e.g., by one or multiple thermal processes), (ix) the diffusion portion 804i formed by diffusion of the ninth portion 402i of the third doping region 401 (e.g., by one or more thermal processes), (x) the diffusion portion 804j formed by diffusion of the tenth portion 402j of the third doping region 401 (e.g., by one or more thermal processes), (xi) the diffusion portion 804k formed by diffusion of the eleventh portion 402k of the third doping region 401 (e.g., by one or more thermal processes), (xii) the diffusion portion 804l formed by diffusion of the twelfth portion 402l of the third doping region 401 (e.g., by one or more thermal processes), (xiii) the diffusion portion 804m formed by diffusion of the thirteenth portion 402m of the third doping region 401 (e.g., by one or more thermal processes), (xiv) the diffusion portion 804n formed by diffusion of the fourteenth portion 402n of the third doping region 401 (e.g., by one or more thermal processes), or (xv) one or more other diffusion portions. In some embodiments, the diffusion portions of the second set of diffusion portions include dopants implanted into the semiconductor body 102 by an implantation act of the first doping process.

[0100] In some embodiments, the dopant of the first group of diffusion portions has the same conductivity type as the dopant of the second group of diffusion portions. In some embodiments, the dopant of the diffused third doping region 801 is the same as (and / or has the same conductivity type as) the dopant of the third doping region 401. In some embodiments, the concentration of the dopant of the diffusion portions of the first group of diffusion portions is greater than the concentration of the dopant of the diffusion portions of the second group of diffusion portions. In some embodiments, at least one of the following is satisfied: (i) the diffusion portion 802a ( Figure 8CThe concentration of dopant in the diffused portion 804a ( Fig.8D (ii) the concentration of the dopant in the diffusion portion 802b ( Figure 8C The concentration of dopant in the diffused portion 804b is greater than that in the diffused portion 804b ( Fig.8D (iii) the concentration of the dopant in the diffusion portion 802c ( Figure 8C The concentration of dopant in the diffused portion 804c ( Fig.8D (iv) the concentration of the dopant in the diffusion portion 802d ( Figure 8C The concentration of dopant in the diffused portion 804d ( Fig.8D ), (v) the dopant concentration of the diffusion portion 802e ( Figure 8C The concentration of dopant in the diffused portion 804e ( Fig.8D (shown in FIG. 1 ), (vi) the concentration of the dopant in the diffusion portion 802f ( Figure 8C The concentration of dopant in the diffused portion 804f ( Fig.8D ), (vii) the concentration of the dopant in the diffused portion 802g ( Figure 8B and Figure 8C The concentration of dopant in the diffused portion 804g ( Figure 8B and Fig.8D (shown in FIG. 1 ), (viii) the concentration of the dopant in the diffusion portion 802h ( Figure 8B and Figure 8C The concentration of dopant in the diffused portion 804h ( Figure 8B and Fig.8D ) of the dopant concentration, (ix) the diffusion portion 802i ( Figure 8C The concentration of dopant in the diffused portion 804i ( Fig.8D The concentration of the dopant in (x) diffusion portion 802j ( Figure 8C The concentration of dopant in the diffused portion 804j ( Fig.8D The concentration of the dopant in (xi) the diffusion portion 802k ( Figure 8C The concentration of dopant in the diffused portion 804k ( Fig.8D ), (xii) the concentration of the dopant in the diffusion portion 802l ( Figure 8C The concentration of dopant in the diffused portion 804l ( Fig.8D (xiii) the concentration of the dopant in the diffusion portion 802m ( Figure 8C The concentration of dopant in the diffused portion 804m ( Fig.8D ), or (xiv) the concentration of the dopant in the diffusion portion 802n ( Figure 8C ) has a greater concentration of dopants than the diffused portion 804n ( Fig.8D In some embodiments, the diffusion portions of the second set of diffusion portions include the dopants implanted into the semiconductor body 102 by the implantation action of the first doping process.

[0101] Fig.8F A dopant concentration data structure 850 is shown, which indicates that the dopant concentration along line 812 ( Figure 8B In some embodiments, the diffused third doping region 801 includes a portion of the diffused third doping region 801 having a first dopant concentration 852 ( Fig.8F ) portion 810a (shown in Figure 8B), at least one of a portion 810b having a second dopant concentration 854, a portion 810c having a third dopant concentration 856, a portion 810d having a fourth dopant concentration 858, or a portion 810e having a fifth dopant concentration 860. In some embodiments, the diffused third doping region 801 has a gradient such that the concentration of the dopant varies along a line 812 extending through at least one of the portion 810a, the portion 810b, the portion 810c, the portion 810d, or the portion 810e. In some embodiments, the distance between the portion 810a and the portion 810e is greater than the distance between the portion 810a and the portion 810b. In some embodiments, the line 812 is parallel to the second horizontal axis 414. In some embodiments, along the line 812, at least one of the following is satisfied: the first dopant concentration 852 is less than the second dopant concentration 854, the second dopant concentration 854 is greater than the third dopant concentration 856, the third dopant concentration 856 is less than the fourth dopant concentration 858, or the fourth dopant concentration 858 is greater than the fifth dopant concentration 860. In some embodiments, the first dopant concentration 852 corresponds to a first drop in dopant concentration (e.g., a first local minimum dopant concentration along line 812). In some embodiments, the second dopant concentration 854 corresponds to a first peak in dopant concentration (e.g., a first local maximum dopant concentration along line 812). In some embodiments, the third dopant concentration 856 corresponds to a second drop in dopant concentration (e.g., a second local minimum dopant concentration along line 812). In some embodiments, the fourth dopant concentration 858 corresponds to a second peak in dopant concentration (e.g., a second local maximum dopant concentration along line 812). In some embodiments, the fifth dopant concentration 860 corresponds to a third drop in dopant concentration (e.g., a third local minimum dopant concentration along line 812). In some embodiments, the first drop corresponds to at least one of a single point of the dopant concentration curve of the dopant concentration data structure 850 (corresponding to the location of the portion 810a of the diffused third doping region 801) or a plurality of points of the dopant concentration curve (e.g., a flat line). In some embodiments, the first peak corresponds to at least one of a single point (corresponding to the location of portion 810 b of the diffused third doped region 801) or a plurality of points (e.g., a flat line) of the dopant concentration curve of the dopant concentration data structure 850. In some embodiments, the second drop corresponds to at least one of a single point (corresponding to the location of portion 810 c of the diffused third doped region 801) or a plurality of points (e.g., a flat line) of the dopant concentration curve of the dopant concentration data structure 850.In some embodiments, the second peak corresponds to at least one of a single point (corresponding to the location of portion 810 d of the diffused third doped region 801) or a plurality of points (e.g., a flat line) of the dopant concentration curve of the dopant concentration data structure 850. In some embodiments, the third drop corresponds to at least one of a single point (corresponding to the location of portion 810 e of the diffused third doped region 801) or a plurality of points (e.g., a flat line) of the dopant concentration curve of the dopant concentration data structure 850.

[0102] In some embodiments, each diffusion portion of one, some, or all of the diffusion portions of the first set of diffusion portions has a higher dopant concentration at the center of the diffusion portion than in areas outside the center of the diffusion portion. In some embodiments, portion 810b corresponds to the center of diffusion portion 802g. In some embodiments, portion 810a and portion 810c are located outside the center of diffusion portion 802g. In some embodiments, the second dopant concentration 854 of portion 810b is greater than the first dopant concentration of portion 810a and the third dopant density of portion 810c, which is at least partially due to the dopant of diffusion portion 802g being more concentrated at the center of diffusion portion 802g than in other areas outside the center of diffusion portion 802g. Embodiments in which the concentration of dopant is lower at the center of diffusion portion 802g than in areas of diffusion portion 802g outside the center of diffusion portion 802g are contemplated, such as where the second dopant concentration 854 of portion 810b including the center is less than at least one of (i) the first dopant concentration 852 of portion 810a of diffusion portion 802g, or (ii) the third dopant concentration 856 of portion 810a of diffusion portion 802g. In embodiments where the dopant is less concentrated at the center of the diffusion portion 802g than in areas of the diffusion portion 802g outside the center of the diffusion portion 802g, the dopant concentration data structure 850 ( Fig.8F The dopant concentration profile of ) is modified, such as offset.

[0103] In some embodiments, the diffused third doped region 801 includes a first sidewall 822 (eg, Figure 8C802 m). In some embodiments, first sidewall 822 includes sidewalls of some or all of the columns of diffusion portions. In some embodiments, first sidewall 822 includes at least one of a sidewall of diffusion portion 802a, a sidewall of diffusion portion 802c, a sidewall of diffusion portion 802e, a sidewall of diffusion portion 802g, a sidewall of diffusion portion 802i, a sidewall of diffusion portion 802k, or a sidewall of diffusion portion 802m. In some embodiments, first sidewall 822 is non-linear such that a first portion 824a of first sidewall 822 is separated from a second portion 824b of first sidewall 822 by a portion 826 of semiconductor body 102. In some embodiments, the dopant of the portion 826 of the semiconductor body 102 has a different conductivity type than the dopant of the diffused third doped region 801, such as where the dopant in the portion 826 is an n-type dopant and the dopant of the diffused third doped region 801 is a p-type dopant, or where the dopant of the portion 826 is a p-type dopant and the dopant of the diffused third doped region 801 is an n-type dopant. Embodiments are contemplated where the dopant of the portion 826 of the semiconductor body 102 has the same conductivity type as the dopant of the diffused third doped region 801. In some embodiments, the first portion 824a of the first sidewall 822 has a first slope (having a first polarity), and at least some of the second portion 824b of the first sidewall 822 has a second slope (having a second polarity). In some embodiments, the first polarity is opposite to the second polarity. In some embodiments, at least one of the first portions 824a of the first sidewall 822 is curved, or the entirety of the first portion 824a of the first sidewall 822 does not have the first slope. In some embodiments, at least one of the second portions 824b of the first sidewall 822 is curved, or the entirety of the second portion 824b of the first sidewall 822 does not have a second slope. In some embodiments, an angle 828 is defined between the first portion 824a of the first sidewall 822 and the second portion 824b of the first sidewall 822. In some embodiments, the angle 828 is less than 180 degrees. In some embodiments, the first portion 824a of the first sidewall 822 includes at least some of the sidewalls of the diffusion portion 802e. In some embodiments, the second portion 824b of the first sidewall 822 includes at least some of the sidewalls of the diffusion portion 802g.

[0104] In some embodiments, the diffused third doped region 801 includes a second sidewall 832 (eg, Figure 8C802n). In some embodiments, second sidewall 832 includes sidewalls of some or all of the columns of diffusion portions. In some embodiments, second sidewall 832 includes at least one of a sidewall of diffusion portion 802b, a sidewall of diffusion portion 802d, a sidewall of diffusion portion 802f, a sidewall of diffusion portion 802h, a sidewall of diffusion portion 802j, a sidewall of diffusion portion 802l, or a sidewall of diffusion portion 802n. In some embodiments, second sidewall 832 is non-linear such that a first portion 834a of second sidewall 832 is separated from a second portion 834b of second sidewall 832 by a portion 836 of semiconductor body 102. In some embodiments, the dopant of the portion 836 of the semiconductor body 102 has a different conductivity type than the dopant of the diffused third doping region 801, such as where the dopant of the portion 836 is an n-type dopant and the dopant of the diffused third doping region 801 is a p-type dopant, or the dopant of the portion 836 is a p-type dopant and the dopant of the diffused third doping region 801 is an n-type dopant. Embodiments are contemplated in which the dopant of the portion 836 of the semiconductor body 102 has the same conductivity type as the dopant of the diffused third doping region 801. In some embodiments, the first portion 834a of the second sidewall 832 has a third slope (having a third polarity), and at least some of the second portion 834b of the second sidewall 832 has a fourth slope (having a fourth polarity). In some embodiments, the third polarity is opposite to the fourth polarity. In some embodiments, at least one of the first portions 834a of the second sidewall 832 is curved, or the entire first portion 834 of the second sidewall 832 does not have the third slope. In some embodiments, at least one of the second portions 834b of the second sidewall 832 is curved, or the entire second portion 834b of the second sidewall 832 does not have the fourth slope. In some embodiments, an angle 838 is defined between the first portion 834a of the second sidewall 832 and the second portion 834b of the second sidewall 832. In some embodiments, the angle 838 is less than 180 degrees. In some embodiments, the first portion 834a of the second sidewall 832 includes at least some of the sidewalls of the diffusion portion 802f. In some embodiments, the second portion 834b of the second sidewall 832 includes at least some of the sidewalls of the diffusion portion 802h.

[0105] In some embodiments, the diffused third doped region 801 is interspersed with one or more spacer regions, including at least one of spacer region 840a, spacer region 840b, spacer region 840c, spacer region 840d, spacer region 840e, or spacer region 840f. In some embodiments, the dopant of each of one, some, or all of the one or more spacer regions is different from the dopant of the diffused third doped region 801, such as where the dopant of the one or more spacer regions is an n-type dopant and the dopant of the diffused third doped region 801 is a p-type dopant, or where the dopant of the one or more spacer regions is a p-type dopant and the dopant of the diffused third doped region 801 is an n-type dopant. In some embodiments, each of one, some, or all of the one or more spacer regions corresponds to a portion of the semiconductor body 102 (e.g., a portion of the semiconductor body 102 that is not a portion of the diffused third doped region 801). In some embodiments, the spacer region 840a separates the diffused portion 802a from at least one of the diffused portion 802b or the diffused portion 802d.

[0106] In some embodiments, the transistor includes a drain region 120 ( Figure 1B ), source region 122 ( Figure 1B ), at least one of the channel region 124 or the gate structure. In some embodiments, the state of the transistor is controlled by a voltage applied to the gate electrode 604 of the gate structure. In some embodiments, when the transistor is in an on state, current flows through the channel region 124 between the source region 122 and the drain region 120. In some embodiments, the semiconductor device 100 includes at least one of a drain contact (not shown) of the transistor or a source contact (not shown) of the transistor. In some embodiments, the drain contact of the transistor is connected (such as electrically connected) to the fourth doped region 110. In some embodiments, the source contact of the transistor is connected (such as electrically connected) to at least one of the sixth doped region 112 or the seventh doped region 114. In some embodiments, at least one of the source contact or the drain contact of the transistor includes a butted contact structure.

[0107] In some embodiments, forming the semiconductor device 100 to include at least one of the third doped region 401 or the diffused third doped region 801 provides an increase in the breakdown voltage of the transistor compared to a semiconductor device that does not include the third doped region 401 or the diffused third doped region 801. In some embodiments, the breakdown voltage corresponds to a voltage across the drain contact and the source contact that causes at least some of the semiconductor device 100 to undergo electrical breakdown or become conductive, thereby allowing current to flow between the drain contact and the source contact (e.g., even when the transistor is operated to be in an off state). In some embodiments, some applications require a breakdown voltage greater than a threshold breakdown voltage. The implementation of the semiconductor device 100 with at least one of the third doped region 401 or the diffused third doped region 801 provides a breakdown voltage greater than the threshold breakdown voltage, thereby enabling the semiconductor device 100 to be used in applications associated with a threshold breakdown voltage.

[0108] In some embodiments, forming the third doped region 401 based on a doping pattern indicating the spaced apart portions 402a-402n of the third doped region 401 provides at least one of (i) a reduction in the on-resistance (Ron) of the transistor, or (ii) a reduction in at least one of the device size of the semiconductor device 100, the transistor size of the transistor, the transistor pitch, etc., compared to a semiconductor device generated based on a doping pattern indicating a bulk doped region. In some embodiments, reducing the on-resistance of the transistor provides a reduction in power consumption of the transistor, and thus provides improved operating efficiency. In some embodiments, the present disclosure provides a reduction of between about 10% and about 20% in the device size of the semiconductor device 100.

[0109] In some embodiments, the diffused third doped region 801 interspersed with one or more spacer regions provides at least one of (i) a reduction in on-resistance of the transistor, or (ii) a reduction in at least one of a device size of the semiconductor device 100, a transistor size of the transistor, a transistor pitch, etc., as compared to a semiconductor device without the one or more spacer regions.

[0110] In some embodiments, the diffused third doped region 801 having a gradient of dopant concentration as provided herein provides at least one of (i) a reduction in on-resistance of the transistor, or (ii) a reduction in at least one of a device size of the semiconductor device 100, a transistor size of the transistor, a transistor pitch, etc., as compared to a semiconductor device without a gradient of dopant concentration.

[0111] In some embodiments, at least one of the following is satisfied: (i) the dopant of the first doping region 106 is an n-type dopant (e.g., the first doping region is a shallow n-well (SH_N)), (ii) the dopant of the second doping region 108 is a p-type dopant (e.g., the second doping region 108 is a high voltage p-body (HVPB) region), (iii) the dopant of the third doping region 401 and the diffused third doping region 801 is a p-type dopant (e.g., at least one of the third doping region 401 and the diffused third doping region 801 is a p-type double diffused (PDD) region), (iv) the dopant of the fourth doping region 110 is an n-type dopant (e.g., the fourth doping region 110 is an N+ region), (v) the dopant of the fifth doping region 104 is a p-type dopant (e.g., the fourth doping region 110 is an N+ region), and (v) the dopant of the fifth doping region 104 is a p-type dopant. The dopant of the semiconductor body 102 is an n-type dopant (e.g., the fifth doped region 104 is a high voltage n-well (HVNW)), (vi) the dopant of the sixth doped region 112 is an n-type dopant (e.g., the sixth doped region is an N+ region), (vii) the dopant of the seventh doped region 114 is a p-type dopant (e.g., the seventh doped region 114 is a P+ region), (viii) the dopant of the eighth doped region 116 is an n-type dopant (e.g., the eighth doped region 116 is an n-type buried layer (NBL)), (ix) the semiconductor body 102 includes a p-type substrate and / or is located above a p-type substrate, such as the substrate includes a p-type dopant, wherein the eighth doped region 116 is located above at least some of the p-type substrate, or (x) the transistor is an n-type LDMOS transistor. In some embodiments, doping the first doping region 106 with an n-type dopant and the third doping region 401 with a p-type dopant provides an increase in the breakdown voltage of the transistor compared to a semiconductor device in which the third doping region 401 and the first doping region 106 are formed with dopants of the same conductivity type.

[0112] In some embodiments, at least one of the following is satisfied: (i) the dopant of the first doping region 106 is an n-type dopant (e.g., the first doping region 106 is a shallow n-well (SH_N)), (ii) the dopant of the second doping region 108 is a p-type dopant (e.g., the second doping region 108 is a high voltage p-body (HVPB) region), (iii) the dopant of the third doping region 401 and the diffused third doping region 801 is an n-type dopant (e.g., at least one of the third doping region 401 and the diffused third doping region 801 is an n-type double diffused (NDD) region), (iv) the dopant of the fourth doping region 110 is an n-type dopant (e.g., the fourth doping region 110 is an N+ region), (v) the dopant of the fifth doping region 104 is an n-type dopant (e.g., the first doping region 104 is a high voltage n-well (HVNW)), (vi) the sixth doping region The dopant of domain 112 is an n-type dopant (e.g., the sixth doped region is an N+ region), (v) the dopant of the fifth doped region 104 is an n-type dopant (e.g., the fifth doped region 104 is a high voltage n-well (HVNW)), (vi) the dopant of the sixth doped region 112 is an n-type dopant (e.g., the sixth doped region is an N+ region), (vii) the dopant of the seventh doped region 114 is a p-type dopant (e.g., the seventh doped region 114 is a P+ region), (viii) the dopant of the eighth doped region 116 is an n-type dopant (e.g., the eighth doped region 116 is an n-type buried layer (NBL)), (ix) the semiconductor body 102 includes a p-type substrate and / or is located above a p-type substrate, such as the substrate includes a p-type dopant, wherein the eighth doped region 116 is located above at least some of the p-type substrate, or (x) the transistor is an n-type LDMOS transistor. In some embodiments, the first doped region 106 and the third doped region 401 , both including n-type dopants, provide a reduction in the on-resistance of the transistor.

[0113] In some embodiments, at least one of the following is satisfied: (i) the dopant of the first doping region 106 is a p-type dopant (for example, the first doping region 106 is a shallow p-well (SH_P)), (ii) the dopant of the second doping region 108 is an n-type dopant (for example, the second doping region 108 is at least one of a shallow n-well (SH_N) or a high-voltage n-body (HVNB) region), (iii) the dopant of the third doping region 401 and the diffused third doping region 801 is an n-type dopant (for example, at least one of the third doping region 401 and the diffused third doping region 801 is an n-type double diffused (NDD) region), (iv) the dopant of the fourth doping region 110 is a p-type dopant (for example, the fourth doping region 110 is a P+ region), (v) the fifth doping region 110 is a p-type dopant (for example, the fourth doping region 110 is a P+ region), and (v) the fifth doping region 110 is a p-type dopant (for example, the fourth doping region 110 is a P+ region). The dopant of the doped region 104 is a p-type dopant (e.g., the fifth doped region 104 is a high voltage p-well (HVPW)), (vi) the dopant of the sixth doped region 112 is a p-type dopant (e.g., the sixth doped region is a P+ region), (vii) the dopant of the seventh doped region 114 is an n-type dopant (e.g., the seventh doped region 114 is an N+ region), (viii) the dopant of the eighth doped region 116 is an n-type dopant (e.g., the eighth doped region 116 is an n-type buried layer (NBL)), (ix) the semiconductor body 102 includes a p-type substrate and / or is located above a p-type substrate, such as the substrate includes a p-type dopant, wherein the eighth doped region 116 is located above at least some of the p-type substrate, or (x) the transistor is a p-type LDMOS transistor. In some embodiments, doping the first doping region 106 with a p-type dopant and the third doping region 401 with an n-type dopant provides an increase in the breakdown voltage of the transistor compared to a semiconductor device in which the third doping region 401 and the first doping region 106 are formed with dopants of the same conductivity type.

[0114] In some embodiments, at least one of the following is satisfied: (i) the dopant of the first doping region 106 is a p-type dopant (for example, the first doping region 106 is a shallow p-well (SH_P)), (ii) the dopant of the second doping region 108 is an n-type dopant (for example, the second doping region 108 is at least one of a shallow n-well (SH_N) or a high-voltage n-body (HVNB) region), (iii) the dopant of the third doping region 401 and the diffused third doping region 801 is a p-type dopant (for example, at least one of the third doping region 401 and the diffused third doping region 801 is a p-type double diffused (PDD) region), (iv) the dopant of the fourth doping region 110 is a p-type dopant (for example, the fourth doping region 110 is a P+ region), (v) the fifth doping region 110 is a p-type dopant (for example, the fourth doping region 110 is a P+ region), and (v) the fifth doping region 110 is a p-type dopant (for example, the fourth doping region 110 is a P+ region). The dopant of the doped region 104 is a p-type dopant (e.g., the fifth doped region 104 is a high voltage p-well (HVPW)), (vi) the dopant of the sixth doped region 112 is a p-type dopant (e.g., the sixth doped region is a P+ region), (vii) the dopant of the seventh doped region 114 is an n-type dopant (e.g., the seventh doped region 114 is an N+ region), (viii) the dopant of the eighth doped region 116 is an n-type dopant (e.g., the eighth doped region 116 is an n-type buried layer (NBL)), (ix) the semiconductor body 102 includes a p-type substrate and / or is located above a p-type substrate, such as the substrate includes a p-type dopant, wherein the eighth doped region 116 is located above at least some of the p-type substrate, or (x) the transistor is a p-type LDMOS transistor. In some embodiments, the first doped region 106 and the third doped region 401, both including p-type dopants, provide a reduction in the on-resistance of the transistor.

[0115] In some embodiments, a method is provided. The method includes performing one or more doping processes, the one or more doping processes being at least one of the following: (i) a second doping process to form a first doped region 106, such as using one or more of the techniques provided herein for forming a third doped region 401 and / or other suitable doping techniques, (ii) a third doping process to form a second doped region 108, such as using one or more of the techniques provided herein for forming a third doped region 401 and / or other suitable doping techniques, (iii) a first doping process to form a third doped region 401, (iv) a fourth doping process to form a fourth doped region 110, such as using one or more of the techniques provided herein for forming a third doped region 401 and / or other suitable doping techniques, (v) a fifth doping process to form a third doped region 110, (vi) a sixth doping process to form a sixth doping region 112, such as using one or more of the techniques provided herein for forming the third doping region 401 and / or other suitable doping techniques, (vii) a seventh doping process to form a seventh doping region 114, such as using one or more of the techniques provided herein for forming the third doping region 401 and / or other suitable doping techniques, or (viii) an eighth doping process to form an eighth doping region 116, such as using one or more of the techniques provided herein for forming the third doping region 401 and / or other suitable doping techniques. In some embodiments, at least some of the one or more doping processes are performed simultaneously. In some embodiments, at least some of the one or more doping processes are performed sequentially.

[0116] Fig. 9 A semiconductor device 900 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E ) to form the semiconductor device 900. In some embodiments, the semiconductor device 900 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 900 includes a diffused third doped region 801 formed using a doping map that satisfies at least one of the following: (i) indicates that the height A' is approximately equal to the depth A (e.g., the height A' is approximately 1 micron and the depth A is approximately 1 micron), (ii) satisfies a design function including A' / (A'+A)=0.5, or (iii) indicates that the number of columns M is equal to 2.

[0117] Fig.10A semiconductor device 1000 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E ) to form the semiconductor device 1000. In some embodiments, the semiconductor device 1000 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1000 includes a diffused third doped region 801 formed using a doping map that satisfies at least one of the following: (i) indicates that the height A' (of one, some, or all portions of the third doped region 401) is greater than the depth A (of one, some, or all portions of the third doped region 401) (e.g., the height A' is about 1.5 microns and the depth A is about 0.5 microns), (ii) satisfies a design function including A' / (A'+A)=0.75, or (iii) indicates that the number of columns M is equal to 2.

[0118] Fig.11 A semiconductor device 1100 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E ) to form the semiconductor device 1100. In some embodiments, the semiconductor device 1100 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1100 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the length B' (of one, some, or all portions of the third doped region 401) is the same for each column of the portion of the first set of columns (e.g., the length B' of one, some, or all portions of the third doped region 401 is about 0.5 microns), (ii) indicates that the distance C (between adjacent portions in different columns of the third doped region 401) is about equal to the length B' (e.g., the distance C is about 0.5 microns), (iii) indicates that the number of columns M is equal to 2, or (iv) satisfies a design function including M×B' / [M×B'+(M-1)×C]=0.67.

[0119] Fig.12 A semiconductor device 1200 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E1 ) to form the semiconductor device 1200 using one or more of the techniques described herein. In some embodiments, the semiconductor device 1200 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1200 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the length B' (of one, some, or all portions of the third doped region 401) is approximately the same for each column of the portion of the first set of columns (e.g., the length B' of one, some, or all portions of the third doped region 401 is approximately 0.4 microns), (ii) indicates that the distance C (between adjacent portions in different columns of the third doped region 401) is less than the length B' (e.g., the distance C is approximately 0.15 microns), (iii) indicates that the number of columns M is equal to three, or (iv) satisfies a design function including M×B' / [M×B'+(M-1)×C]=0.8.

[0120] Fig.13A A semiconductor device 1300 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E ) to form the semiconductor device 1300. In some embodiments, the semiconductor device 1300 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1300 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of columns M of the first group of columns is equal to three, (ii) indicates a first length B'1 of a portion of a first column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), (iii) indicates a second length B'2 of a portion of a second column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), (iv) indicates a third length B'3 of a portion of a third column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), wherein the second column is located between the first column and the third column, (v) indicates that the first length B'1 is approximately equal to the second length B'2, (vi) indicates that the third length B'3 is greater than the first length B'1 and the second length B'2, or (vii) indicates that the distance C (between adjacent portions in different columns of the third doped region 401) for each column of the portion of the first group of columns is approximately the same. Fig. 13B A dopant concentration data structure 1350 is shown that indicates the dopant concentration along portions 1306a, 1306b, 1306c, 1306d, 1306e, 1306f, and 1306g ( Fig.13AThe concentration of the dopant in the diffused third doped region 801 of line 1302 is shown in FIG.

[0121] Fig.14A A semiconductor device 1400 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E 100 ) to form the semiconductor device 1400. In some embodiments, the semiconductor device 1400 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1400 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of columns M of the first group of columns is equal to three, (ii) indicates a first length B'1 of a portion of a first column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), (iii) indicates a second length B'2 of a portion of a second column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), (iv) indicates a third length B'3 of a portion of a third column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), wherein the second column is located between the first column and the third column, (v) indicates that the third length B'3 is approximately equal to the second length B'2, (vi) indicates that the first length B'1 is less than the second length B'2 and the third length B'3, or (vii) indicates that the distance C (between adjacent portions in different columns of the third doped region 401) for each column of the portion of the first group of columns is approximately the same. Fig. 14B A dopant concentration data structure 1450 is shown that indicates the dopant concentration along portions 1406a, 1406b, 1406c, 1406d, 1406e, 1406f, and 1406g ( Fig.14A The concentration of the dopant in the diffused third doped region 801 of line 1402 is shown in FIG.

[0122] Fig.15A A semiconductor device 1500 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form semiconductor device 1500. In some embodiments, semiconductor device 1500 includes at least some of the layers, components, elements, etc. provided herein with respect to semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1500 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of columns M of the first group of columns is equal to three, (ii) indicates a first length B'1 of a portion of a first column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), (iii) indicates a second length B'2 of a portion of a second column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), (iv) indicates a third length B'3 of a portion of a third column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), wherein the second column is located between the first column and the third column, (v) indicates that the first length B'1 is less than the second length B'2, (vi) indicates that the second length B'2 is less than the third length B'3, or (vii) indicates that the distance C (between adjacent portions in different columns of the third doped region 401) is approximately the same for each column of the portion of the first group of columns. Fig. 15B A dopant concentration data structure 1550 is shown that indicates the dopant concentration along portions 1506a, 1506b, 1506c, 1506d, 1506e, 1506f, and 1506g ( Fig.15A The concentration of the dopant in the diffused third doped region 801 of line 1502 is shown in FIG.

[0123] Fig.16A A semiconductor device 1600 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 1600. In some embodiments, the semiconductor device 1600 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1600 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of columns M of the first group of columns is equal to three, (ii) indicates a first length B'1 of a portion of a first column of the first group of columns (e.g., the length of the portion along the second horizontal axis 414), (iii) indicates a second length B'2 of a portion of a second column of the first group of columns (e.g., the length of the portion along the second horizontal axis 414), (iv) indicates a third length B'3 of a portion of a third column of the first group of columns (e.g., the length of the portion along the second horizontal axis 414), wherein the second column is located between the first column and the third column, (v) the first length B'1 is approximately equal to the second length B'2, (vi) indicates that the third length B'3 is greater than the first length B'1 and the second length B'2, or (vii) indicates that a first distance C1 is less than a second distance C2, wherein the first distance C1 corresponds to a distance between a portion in the first column and an adjacent portion in the second column, and / or the second distance C2 corresponds to a distance between a portion in the second column and an adjacent portion in the third column. Fig. 16B 1606a, 1606b, 1606c, 1606d, 1606e, 1606f, and 1606g ( Fig.16A The concentration of the dopant in the diffused third doped region 801 of line 1602 is shown in FIG.

[0124] Fig.17A A semiconductor device 1700 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 1700. In some embodiments, the semiconductor device 1700 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1700 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of columns M of the first group of columns is equal to three, (ii) indicates a first length B'1 of a portion of a first column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), (iii) indicates a second length B'2 of a portion of a second column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), (iv) indicates a third length B'3 of a portion of a third column of the first group of columns (e.g., a length of the portion along the second horizontal axis 414), wherein the second column is located between the first column and the third column, (v) indicates that the third length B'3 is approximately equal to the second length B'2, (vi) indicates that the first length B'1 is less than the second length B'2 and the third length B'3, or (vii) indicates that a first distance C1 is less than a second distance C2, wherein the first distance C1 corresponds to a distance between a portion in the first column and an adjacent portion in the second column, and / or the second distance C2 corresponds to a distance between a portion in the second column and an adjacent portion in the third column. Fig. 17B 1706a, 1706b, 1706c, 1706d, 1706e, 1706f, and 1706g ( FIG. 1706b ) of the third doped region 801 along the doping region 801 through diffusion are shown in accordance with some embodiments. Fig.17A The concentration of dopants in the diffused third doped region 801 of line 1702 is shown in FIG.

[0125] Fig.18A A semiconductor device 1800 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E100 ) to form the semiconductor device 1800. In some embodiments, the semiconductor device 1800 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1800 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of columns M of the first group of columns is equal to three, (ii) indicates a first length B'1 of a portion of a first column of the first group of columns (e.g., the length of the portion along the second horizontal axis 414), (iii) indicates a second length B'2 of a portion of a second column of the first group of columns (e.g., the length of the portion along the second horizontal axis 414), (iv) indicates a third length B'3 of a portion of a third column of the first group of columns (e.g., the length of the portion along the second horizontal axis 414), wherein the second column is located between the first column and the third column, (v) indicates that the first length B'1 is less than the second length B'2, (vi) indicates that the second length B'2 is less than the third length B'3, or (vii) indicates that a first distance C1 is greater than a second distance C2, wherein the first distance C1 corresponds to a distance between a portion in the first column and an adjacent portion in the second column, and / or the second distance C2 corresponds to a distance between a portion in the second column and an adjacent portion in the third column. Fig.18B 1806a, 1806b, 1806c, 1806d, 1806e, 1806f, and 1806g ( FIG. 1806b ) of the third doped region 801 along the doping region 801 through diffusion are shown in accordance with some embodiments. Fig.18A The concentration of the dopant in the diffused third doped region 801 of line 1802 is shown in FIG.

[0126] Fig.19 A semiconductor device 1900 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E 1 ) to form the semiconductor device 1900. In some embodiments, the semiconductor device 1900 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 1900 includes a diffused third doped region 801 formed using a doping map that satisfies at least one of the following: (i) indicates that the number of rows N along the first horizontal axis 412 is equal to 1, (ii) indicates that the width D' (of one, some or all portions of the third doped region 401) is about 1.5 microns, or (ii) satisfies a design function including N×D' / [N×D'+(N-1)×E]=1.

[0127] Fig. 20A semiconductor device 2000 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E ) to form the semiconductor device 2000. In some embodiments, the semiconductor device 2000 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2000 includes a diffused third doped region 801 formed using a doping map that satisfies at least one of the following: (i) indicates that the number of rows N along the first horizontal axis 412 is equal to 2, (ii) indicates that the width D' (of one, some, or all portions of the third doped region 401) is about 0.5 microns (e.g., the width D' of the portion is about the same for portions of the first row and portions of the second row), (iii) indicates that the distance E (between adjacent portions in different rows of the third doped region 401) is about the same for each row of portions of the first set of rows (e.g., the distance E is about 0.5 microns) or (iv) satisfies a design function including N×D' / [N×D'+(N-1)×E]=0.67.

[0128] Fig.21 A semiconductor device 2100 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E ) to form the semiconductor device 2100. In some embodiments, the semiconductor device 2100 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2100 includes a diffused third doped region 801 formed using a doping map that satisfies at least one of the following: (i) indicates that the number of rows N along the first horizontal axis 412 is equal to three, (ii) indicates that the width D' (of one, some, or all portions of the third doped region 401) is about 0.4 microns (e.g., the width D' of the portion is about the same for the portions of the first row, the portions of the second row, and the portions of the third row), (iii) indicates that the distance E (between adjacent portions in different rows of the third doped region 401) is about the same for each row of the portions of the first set of rows (e.g., the distance E is about 0.15 microns), or (iv) satisfies a design function including N×D' / [N×D'+(N-1)×E]=0.8.

[0129] Fig.22A A semiconductor device 2200 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 2200. In some embodiments, the semiconductor device 2200 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2200 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of rows N of the first group of rows along the first horizontal axis 412 is equal to three, (ii) indicates a first width D'1 of a portion of a first row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iii) indicates a second width D'2 of a portion of a second row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iv) indicates a third width D'3 of a portion of a third row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), wherein the second row is located between the first row and the third row, (v) indicates that the first width D'1 is approximately equal to the second width D'2, (vi) indicates that the third width D'3 is greater than the first width D'1 and the second width D'2, or (vii) indicates that for each row of the portions of the first group of rows, the distance E (between adjacent portions in different rows of the third doped region 401) is approximately the same. Fig. 22B 2206a, 2206b, 2206c, 2206d, 2206e, 2206f, and 2206g ( FIG. 2206b ) of the third doped region 801 along the doping concentration data structure 2250 indicating the doping concentration of the doping region 801 along the doping concentration data structure 2250 along the doping concentration of the doping region 801 along the doping concentration of the doping region 801 Fig.22A The concentration of dopants in the diffused third doped region 801 of line 2202 is shown in FIG.

[0130] Fig.23A A semiconductor device 2300 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 2300. In some embodiments, the semiconductor device 2300 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2300 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of rows N of the first group of rows along the first horizontal axis 412 is equal to three, (ii) indicates a first width D'1 of a portion of a first row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iii) indicates a second width D'2 of a portion of a second row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iv) indicates a third width D'3 of a portion of a third row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), wherein the second row is located between the first row and the third row, (v) indicates that the first width D'1 is greater than the second width D'2, (vi) indicates that the third width D'3 is approximately equal to the second width D'2, or (vii) indicates that the distance E (between adjacent portions in different rows of the third doped region 401) is approximately the same for each row of the portion of the first group of rows. Fig. 23B 2306a, 2306b, 2306c, 2306d, 2306e, 2306f, and 2306g ( FIG. 2306b ) of the third doped region 801 along the doping region 801 through diffusion are shown in accordance with some embodiments. Fig.23A The concentration of dopants in the diffused third doped region 801 of line 2302 is shown in FIG.

[0131] Fig.24A A semiconductor device 2400 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 2400. In some embodiments, the semiconductor device 2400 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2400 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of rows N of the first group of rows along the first horizontal axis 412 is equal to three, (ii) indicates a first width D'1 of a portion of a first row of the first group of rows (e.g., a length of the portion along the first horizontal axis 412), (iii) indicates a second width D'2 of a portion of a second row of the first group of rows (e.g., a length of the portion along the first horizontal axis 412), (iv) indicates a third width D'3 of a portion of a third row of the first group of rows (e.g., a length of the portion along the first horizontal axis 412), wherein the second row is located between the first row and the third row, (v) indicates that the first width D'1 is less than the second width D'2, (vi) indicates that the third width D'3 is greater than the second width D'2, or (vii) indicates that the distance E (between adjacent portions in different rows of the third doped region 401) is approximately the same for each row of the portion of the first group of rows. Fig. 24B 2406a, 2406b, 2406c, 2406d, 2406e, 2406f, and 2406g ( FIG. 2406b ) of the third doped region 801 along the doping concentration data structure 2450 indicating the doping concentration of the doping region 801 along the doping concentration data structure 2450 along the doping concentration of the doping region 801 along the doping concentration of the doping region 801 Fig.24A The concentration of dopants in the diffused third doped region 801 of line 2402 is shown in FIG.

[0132] Fig.25A A semiconductor device 2500 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 2500. In some embodiments, the semiconductor device 2500 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2500 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number of rows N of the first group of rows along the first horizontal axis 412 is equal to three, (ii) indicates a first width D'1 of a portion of a first row of the first group of rows (e.g., a length of the portion along the first horizontal axis 412), (iii) indicates a second width D'2 of a portion of a second row of the first group of rows (e.g., a length of the portion along the first horizontal axis 412), (iv) indicates a third width D'3 of a portion of a third row of the first group of rows (e.g., a length of the portion along the first horizontal axis 412), wherein the second row is located between the first row and the third row, (v) indicates that the first width D'1 is approximately equal to the third width D'3, (vi) indicates that the third width D'3 is less than the second width D'2, or (vii) indicates that the distance E (between adjacent portions in different rows of the third doped region 401) is approximately the same for each row of the portion of the first group of rows. Fig.25B 2506a, 2506b, 2506c, 2506d, 2506e, 2506f, and 2506g ( FIG. 2506b ) of the third doped region 801 along the doping concentration data structure 2550 indicating the doping concentration of the doping region 801 along the doping concentration data structure 2550 along the doping concentration of the doping region 801 along the doping concentration of the doping region 801 Fig.25A The concentration of the dopant in the diffused third doped region 801 of line 2502 is shown in FIG.

[0133] Fig.26A A semiconductor device 2600 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 2600. In some embodiments, the semiconductor device 2600 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2600 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number N of rows of the first group of rows along the first horizontal axis 412 is equal to three, (ii) indicates a first width D'1 of a portion of a first row of the first group of rows (e.g., a length of the portion along the first horizontal axis 412), (iii) indicates a second width D'2 of a portion of a second row of the first group of rows (e.g., a length of the portion along the first horizontal axis 412), (iv) indicates a third width D'3 of a portion of a third row of the first group of rows (e.g., a length of the portion along the first horizontal axis 412), wherein the second row is located between the first row and the third row, (v) indicates that the first width D'1 is approximately equal to the second width D'2, (vi) indicates that the third width D'3 is greater than the first width D'1 and the second width D'2, or (vii) indicates that a first distance E1 is greater than a second distance E2, wherein the first distance E1 corresponds to a distance between a portion in the first row and an adjacent portion in the second row, and / or the second distance E2 corresponds to a distance between a portion in the row and an adjacent portion in the third row. Fig.26B 2606a, 2606b, 2606c, 2606d, 2606e, 2606f, and 2606g ( FIG. 2606b ) of the third doped region 801 along the doping concentration data structure 2650 indicating the doping concentration of the doping region 801 along the doping concentration data structure 2650 along the doping concentration of the doping region 801 along the doping concentration of the doping region 801 Fig.26A The concentration of dopants in the diffused third doped region 801 of line 2602 is shown in FIG.

[0134] Fig.27A A semiconductor device 2700 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 2700. In some embodiments, the semiconductor device 2700 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2700 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number N of rows of the first group of rows along the first horizontal axis 412 is equal to three, (ii) indicates a first width D'1 of a portion of a first row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iii) indicates a second width D'2 of a portion of a second row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iv) indicates a third width D'3 of a portion of a third row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), wherein the second row is located between the first row and the third row, (v) indicates that the first width D'1 is greater than the second width D'2, (vi) indicates that the third width D'3 is approximately equal to the second width D'2, or (vii) indicates that a first distance E1 is greater than a second distance E2, wherein the first distance E1 corresponds to a distance between a portion in the first row and an adjacent portion in the second row, and / or the second distance E2 corresponds to a distance between a portion in the row and an adjacent portion in the third row. Fig.27B 2706a, 2706b, 2706c, 2706d, 2706e, 2706f, and 2706g ( FIG. 2706b ) of the third doped region 801 along the doping concentration data structure 2750 indicating the doping concentration of the doping region 801 along the doping concentration data structure 2750 along the doping concentration of the doping region 801 along the doping concentration of the doping region 801 Fig.27A The concentration of dopants in the diffused third doped region 801 of line 2702 is shown in FIG.

[0135] Fig.28A A semiconductor device 2800 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 2800. In some embodiments, the semiconductor device 2800 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2800 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number N of rows of the first group of rows along the first horizontal axis 412 is equal to three, (ii) indicates a first width D'1 of a portion of a first row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iii) indicates a second width D'2 of a portion of a second row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iv) indicates a third width D'3 of a portion of a third row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), wherein the second row is located between the first row and the third row, (v) indicates that the first width D'1 is less than the second width D'2, (vi) indicates that the third width D'3 is greater than the second width D'2, or (vii) indicates that a first distance E1 is greater than a second distance E2, wherein the first distance E1 corresponds to a distance between a portion in the first row and an adjacent portion in the second row, and / or the second distance E2 corresponds to a distance between a portion in the row column and an adjacent portion in the third row. Fig.28B 2806a, 2806b, 2806c, 2806d, 2806e, 2806f, and 2806g ( FIG. 2806b ) of the third doped region 801 along the doping region 801 through diffusion are shown in accordance with some embodiments. Fig.28A The concentration of dopants in the diffused third doped region 801 of line 2802 is shown in FIG.

[0136] Fig.29A A semiconductor device 2900 according to some embodiments is shown. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E) to form the semiconductor device 2900. In some embodiments, the semiconductor device 2900 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 2900 includes a diffused third doped region 801 formed using a doping pattern that satisfies at least one of the following: (i) indicates that the number N of rows of the first group of rows along the first horizontal axis 412 is equal to three, (ii) indicates a first width D'1 of a portion of a first row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iii) indicates a second width D'2 of a portion of a second row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), (iv) indicates a third width D'3 of a portion of a third row of the first group of rows (e.g., the length of the portion along the first horizontal axis 412), wherein the second row is located between the first row and the third row, (v) indicates that the first width D'1 is approximately equal to the third width D'3, (vi) indicates that the third width D'3 is less than the second width D'2, or (vii) indicates that a first distance E1 is less than a second distance E2, wherein the first distance E1 corresponds to a distance between a portion in the first row and an adjacent portion in the second row, and / or the second distance E2 corresponds to a distance between a portion in the row and an adjacent portion in the third row. Fig.29B 2906a, 2906b, 2906c, 2906d, 2906e, 2906f, and 2906g ( FIG. 2906b ) of the third doped region 801 along the doping region 801 through diffusion are shown in accordance with some embodiments. Fig.29A The concentration of dopants in the diffused third doped region 801 of line 2902 is shown in FIG.

[0137] FIG. 30A to FIG. 30D A semiconductor device 3000 is shown in accordance with some embodiments. Fig. 30A A top view of a semiconductor device 3000 is shown. Fig. 30B Shown along Fig. 30A 1 is a cross-sectional view of the semiconductor device 3000 taken along line BB. Fig. 30C Shown along Fig. 30A 2 is a cross-sectional view of the semiconductor device 3000 taken along line CC. Fig.30D FIG. 3 shows a top portion 3006 ( FIG. 3004 ) without the semiconductor device 3000 according to some embodiments. Fig. 30B ) to show portions 3002a-3002g of the third doped region 401. In some embodiments, the semiconductor device 100 ( Figures 1A to 8E100 ). In some embodiments, the semiconductor device 3000 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the number of columns M is equal to 1 (e.g., the first set of columns of the third doped region 401 includes only a single column).

[0138] Fig.31A and Fig.31B A semiconductor device 3100 is shown in accordance with some embodiments. Fig.31A A top view of a semiconductor device 3100 is shown. Fig.31B Shown along Fig.31A In some embodiments, the semiconductor device 100 ( Figures 1A to 8E1) is used to form the semiconductor device 3100 using one or more of the techniques for forming the third doping region 401 provided herein. In some embodiments, the semiconductor device 3100 includes at least some of the layers, components, elements, etc. provided herein with respect to the semiconductor device 100 and the relationships therebetween. In some embodiments, the semiconductor device 3100 includes a multilayer third doping region 3101, and the multilayer third doping region 3101 includes at least one of the following: (i) a first layer 3102 of a portion of the multilayer third doping region 3101, (ii) a second layer 3104 of a portion of the multilayer third doping region 3101, or (iii) one or more other layers of a portion of the multilayer third doping region 3101. In some embodiments, each layer of the multilayer third doping region 3101 includes a matrix arrangement of a first group of rows and a first group of columns. In some embodiments, the first layer 3102 is formed using one or more of the techniques for forming the third doping region 401 provided herein. In some embodiments, the first layer 3102 includes at least some of the components, elements, etc. provided herein with respect to the third doping region 401 and the relationships therebetween. In some embodiments, the second layer 3104 is formed using one or more of the techniques for forming the third doping region 401 provided herein. In some embodiments, the second layer 3104 includes at least some of the components, elements, etc. provided herein with respect to the third doped region 401 and the relationships therebetween. In some embodiments, each portion of one, some, or all portions of the multilayer third doped region 3101 in the first layer 3102 is located above a portion of the multilayer tri-doped region 3101 in the second layer 3104. In some embodiments, the first layer 3102 is spaced apart from the second layer 3104 by about a distance 3106. In some embodiments, each portion of one, some, or all portions of the multilayer third doped region 3101 in the first layer 3102 is spaced apart from a portion of the multilayer third doped region 3101 in the second layer 3104 below by about a distance 3106. In some embodiments, the dopant of the first layer 3102 has the same conductivity type as the dopant of the second layer 3104. Embodiments are contemplated in which the dopant of the first layer 3102 has a different conductivity type than the dopant of the second layer 3104.

[0139] In some embodiments, the term "concentration of a dopant" as used in the present disclosure pertains to a measure of a dopant, such as the amount of a dopant per unit area, the amount of a dopant per unit volume, or at least one of one or more other measures pertaining to a dopant.

[0140] In some embodiments, a semiconductor device is provided. The semiconductor device includes a semiconductor body and a transistor. The transistor includes: a drain region located in the semiconductor body; a first doped region located in the drain region; a source region located in the semiconductor body; a second doped region adjacent to the source region; and a third doped region located between the first doped region and the second doped region. The third doped region includes a first portion having a first concentration of dopant, a second portion adjacent to the first portion and having a second concentration of dopant, a third portion adjacent to the second portion and having a third concentration of dopant, and a fourth portion adjacent to the third portion and having a fourth concentration of dopant. The third doped region has a gradient such that along a first line extending through the first portion, the second portion, the third portion, and the fourth portion: the first concentration is less than the second concentration, the second concentration is greater than the third concentration, and the third concentration is less than the fourth concentration.

[0141] In some embodiments, a first distance between the first portion and the second portion is less than a second distance between the first portion and the fourth portion.

[0142] In some embodiments, the first doped region comprises a shallow well, and the second doped region comprises a high voltage body region.

[0143] In some embodiments, the transistor includes a gate structure located above the third doped region.

[0144] In some embodiments, the dopant of the first doped region has the first conductivity type, and the dopant of the third doped region has the first conductivity type.

[0145] In some embodiments, the third doped region is located in the drain region.

[0146] In some embodiments, the dopant of the first doped region has a first conductivity type, the dopant of the second doped region has a second conductivity type different from the first conductivity type, and the dopant of the third doped region has the second conductivity type.

[0147] In some embodiments, the semiconductor device includes a fourth doped region, the fourth doped region is located between a fifth portion of the third doped region and a sixth portion of the third doped region, and has a dopant of the first conductivity type, wherein the dopant of the third doped region has a second conductivity type different from the first conductivity type.

[0148] In some embodiments, a method of forming a semiconductor device is provided. The method includes forming a first doped region in a semiconductor body, wherein the first doped region is located in a drain region of a transistor. The method includes forming a second doped region in the semiconductor body, wherein the second doped region is adjacent to a source region of the transistor. The method includes forming a first portion of a third doped region in the semiconductor body between the first doped region and the second doped region. The method includes forming a second portion of the third doped region in the semiconductor body between the first doped region and the second doped region. A portion of the semiconductor body separates the first portion from the second portion. The dopant of the portion of the semiconductor body has a first conductivity type. The dopant of the third doped region has a second conductivity type different from the first conductivity type.

[0149] In some embodiments, forming a first portion of a third doped region and forming a second portion of the third doped region include simultaneously injecting a first distribution of a dopant of a second conductivity type into a first location of the semiconductor body to form the first portion of the third doped region, and injecting a second distribution of a dopant of the second conductivity type into a second location of the semiconductor body to form the second portion of the third doped region.

[0150] In some embodiments, forming a first portion of a third doped region and forming a second portion of the third doped region include sequentially injecting a first distribution of a second conductive type of dopant into a first location of the semiconductor body to form the first portion of the third doped region, and injecting a second distribution of a second conductive type of dopant into a second location of the semiconductor body to form the second portion of the third doped region.

[0151] In some embodiments, forming a first portion of the third doped region includes injecting a first distribution of a dopant of the second conductivity type into a first location of the drain region of the transistor, and forming a second portion of the third doped region includes injecting a second distribution of a dopant of the second conductivity type into a second location of the drain region of the transistor.

[0152] In some embodiments, the method includes forming a gate structure of the transistor over the semiconductor body, wherein the gate structure is located over a first portion of the third doped region and a second portion of the third doped region.

[0153] In some embodiments, a semiconductor device is provided. The semiconductor device includes a semiconductor body and a transistor. The transistor includes: a drain region located in the semiconductor body; a first doped region located in the drain region; a source region located in the semiconductor body; a second doped region adjacent to the source region; and a third doped region located between the first doped region and the second doped region. The third doped region has a non-linear sidewall such that a first portion of the sidewall is separated from a second portion of the sidewall by a portion of the semiconductor body.

[0154] In some embodiments, an angle is defined between the first portion of the sidewall and the second portion of the sidewall, and at least one of the first portion of the sidewall or the second portion of the sidewall is curved.

[0155] In some embodiments, the third doped region includes a third portion having a first concentration of dopant, a fourth portion adjacent to the third portion and having a second concentration of dopant, a fifth portion adjacent to the fourth portion and having a third concentration of dopant, and a sixth portion adjacent to the fifth portion and having a fourth concentration of dopant, wherein the third doped region has a gradient such that along a first line extending through the third portion, the fourth portion, the fifth portion, and the sixth portion: the first concentration is less than the second concentration, the second concentration is greater than the third concentration, and the third concentration is less than the fourth concentration.

[0156] In some embodiments, the semiconductor device includes a fourth doped region, which is located between a third portion of the third doped region and a fourth portion of the third doped region and has a dopant of the first conductivity type, wherein the dopant of the third doped region has a second conductivity type different from the first conductivity type.

[0157] In some embodiments, the dopant of the first doped region has the first conductivity type, and the dopant of the third doped region has the first conductivity type.

[0158] In some embodiments, the third doped region has a non-linear second sidewall such that a first portion of the second sidewall is separated from a second portion of the second sidewall by a second portion of the semiconductor body.

[0159] In some embodiments, the semiconductor body has a dopant of a first conductivity type, and the dopant of the third doped region has a second conductivity type different from the first conductivity type.

[0160] The features of several embodiments are summarized above so that those skilled in the art can better understand aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis to design or modify other processes and structures for implementing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent constructions do not deviate from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and modifications herein without departing from the spirit and scope of the present disclosure.

[0161] Although the subject matter has been described in language specific to structural features or methodological acts, it is to be understood that the subject matter of the appended claims is not necessarily limited to the specific features or acts described above. Rather, the specific features and acts described above are disclosed as example forms of implementing at least some of the claims.

[0162] Various operations of the embodiments are provided herein. The order in which some or all operations are described should not be interpreted as implying that these operations must rely on the order. With the benefit of this specification, optional ordering will be understood. In addition, it will be understood that not all operations must be present in each embodiment provided herein. In addition, it will be understood that in some embodiments, not all operations are necessary.

[0163] It will be understood that the layers, components, elements, etc. described herein are illustrated with specific dimensions relative to each other, such as structural dimensions or orientations, for example, in some embodiments, for the purpose of simplicity and ease of understanding, and their actual dimensions are very different from the dimensions shown herein. In addition, there are various techniques for forming the layers, regions, components, elements, etc. described herein, such as, for example, at least one of etching techniques, planarization techniques, implantation techniques, doping techniques, spin coating techniques, sputtering techniques, growth techniques, or deposition techniques (such as chemical vapor deposition (CVD)).

[0164] In addition, "exemplary" and the like are used herein to indicate that they are used as examples, instances, illustrations, etc., and are not necessarily advantageous. As used in this application, "or" refers to an inclusive "or", rather than an exclusive "or". In addition, unless otherwise specified or the context clearly points to a singular form, the "one" and "an" used in this application and the appended claims should generally be interpreted as "one or more". In addition, at least one of A and B, etc., generally represent A or B or both A and B. In addition, within the scope of using "including", "having", "having", "with", "with" or their variations, these terms are intended to be inclusive in a manner similar to the term "including". In addition, unless otherwise specified, "first", "second", etc. are not intended to imply time, space, order, etc. On the contrary, such terms are only used as identifiers, names, etc. of parts, elements, items, etc. For example, the first element and the second element generally correspond to element A and element B, or two different or two identical elements or identical elements.

[0165] In addition, although the present disclosure has been shown and described with respect to one or more embodiments, other persons of ordinary skill in the art will make equivalent changes and modifications based on the reading and understanding of this specification and the accompanying drawings. The present disclosure includes all such modifications and changes and is limited only by the scope of the following claims. In particular, with respect to the various functions performed by the above-mentioned components (e.g., elements, resources, etc.), unless otherwise specified, the terms used to describe these components are intended to correspond to any component that performs the specified function of the component (e.g., functional equivalent), even if the structure is not identical to the disclosed structure. In addition, although a particular feature of the present disclosure may be disclosed only in one of several embodiments, such a feature may be combined with one or more other features of other embodiments, which is desirable and advantageous for any given or specific application.

Claims

1. A semiconductor device, comprising: Semiconductor body; as well as A transistor, the transistor comprising: a drain region located in the semiconductor body; A first doped region, located in the drain region; a source region located in the semiconductor body; a second doped region adjacent to the source region; and a third doped region located between the first doped region and the second doped region, the third doped region comprising a first portion having a first concentration of dopant, a second portion adjacent to the first portion and having a second concentration of dopant, a third portion adjacent to the second portion and having a third concentration of dopant, and a fourth portion adjacent to the third portion and having a fourth concentration of dopant, wherein the third doped region has a gradient such that along a first line extending through the first portion, the second portion, the third portion, and the fourth portion: The first concentration is less than the second concentration; The second concentration is greater than the third concentration; and The third concentration is lower than the fourth concentration.

2. The semiconductor device according to claim 1, wherein: A first distance between the first portion and the second portion is smaller than a second distance between the first portion and the fourth portion.

3. The semiconductor device according to claim 1, wherein: The first doped region includes a shallow well; and The second doped region includes a high voltage body region.

4. The semiconductor device according to claim 1, wherein: The transistor comprises: The gate structure is located on the third doped region.

5. The semiconductor device according to claim 1, wherein: The dopant of the first doped region has a first conductivity type; and The dopant of the third doping region has the first conductivity type.

6. The semiconductor device according to claim 1, wherein: The third doped region is located in the drain region.

7. The semiconductor device according to claim 1, wherein: The dopant of the first doped region has a first conductivity type; The dopant of the second doped region has a second conductivity type different from the first conductivity type; and The dopant of the third doping region has the second conductivity type.

8. The semiconductor device according to claim 1, further comprising: A fourth doped region is located between the fifth portion of the third doped region and the sixth portion of the third doped region and has a dopant of the first conductivity type, wherein the dopant of the third doped region has a second conductivity type different from the first conductivity type.

9. A method of forming a semiconductor device, comprising: forming a first doped region in a semiconductor body, wherein the first doped region is located in a drain region of a transistor; forming a second doped region in the semiconductor body, wherein the second doped region is adjacent to a source region of the transistor; forming a first portion of a third doped region in the semiconductor body between the first doped region and the second doped region; and A second portion of the third doped region is formed in the semiconductor body between the first doped region and the second doped region, wherein: a portion of the semiconductor body separating the first portion from the second portion; The dopant of the portion of the semiconductor body has a first conductivity type; and The dopant of the third doping region has a second conductivity type different from the first conductivity type.

10. A semiconductor device comprising: Semiconductor body; as well as A transistor, the transistor comprising: a drain region located in the semiconductor body; A first doped region, located in the drain region; a source region located in the semiconductor body; a second doped region adjacent to the source region; and A third doped region is located between the first doped region and the second doped region, wherein the third doped region has a non-linear sidewall such that a first portion of the sidewall is separated from a second portion of the sidewall by a portion of the semiconductor body.

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