Display device

Abstract

A display device includes: a substrate; a first light emitting diode, a second light emitting diode, and a third light emitting diode disposed on the substrate and configured to emit light of different colors; a bank layer disposed on the substrate; and a hydrogen supply layer disposed to overlap or be adjacent to each of the first light emitting diode and the second light emitting diode, in which each of the first light emitting diode, the second light emitting diode, and the third light emitting diode includes: a pixel electrode, the bank layer including an opening exposing a central portion of the pixel electrode; an intermediate layer disposed on the pixel electrode and disposed in the opening in the bank layer; and a counter electrode covering the intermediate layer and the bank layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0110135 filed in the Korean Intellectual Property Office on August 22, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a structure of a display device and a method of manufacturing the display device. Background Art

[0004] Typically, a display device includes a light-emitting element and a thin film transistor on a substrate, and operates according to the light emission of the light-emitting element. The light-emitting element may be an element configured to convert electrical energy into light energy. Examples of the light-emitting element include an organic light-emitting element in which the light-emitting material may be an organic material and a quantum dot light-emitting element in which the light-emitting material may be a quantum dot.

[0005] Specifically, each pixel of the display device includes a light-emitting element including an intermediate layer, wherein the intermediate layer includes an emission layer between a pixel electrode and a counter electrode. The display device can be configured to control the emission of light from each pixel or the degree of light emission by a thin film transistor electrically connected to the pixel electrode. Some layers included in the intermediate layer of the light-emitting element can be provided in common throughout a plurality of light-emitting elements. Summary of the invention

[0006] One or more embodiments include a display device including a light emitting element having high emission efficiency and long lifespan. However, such a technical problem may be merely an example, and the present disclosure may not be limited thereto.

[0007] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0008] According to one or more embodiments, a display device may include: a substrate; a first light-emitting diode, a second light-emitting diode, and a third light-emitting diode, which are arranged on the substrate and configured to emit light of different colors; a dam layer, which is arranged on the substrate; and a hydrogen supply layer, which is arranged to overlap or be adjacent to each of the first light-emitting diode and the second light-emitting diode, wherein the first light-emitting diode, the second light-emitting diode, and the third light-emitting diode may each include: a pixel electrode, which is arranged on the substrate, and the dam layer includes an opening that exposes a central portion of the pixel electrode; an intermediate layer, which is arranged on the pixel electrode and in the opening; and a counter electrode, which is arranged on the intermediate layer and on the dam layer.

[0009] The hydrogen supply layer may not overlap with the third light emitting diode, and the hydrogen supply layer may be arranged not to be adjacent to the third light emitting diode.

[0010] The hydrogen supply layer may include: hydrogen; and silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y ) at least one of.

[0011] The first light-emitting diode may include a first pixel electrode, the second light-emitting diode may include a second pixel electrode, and the third light-emitting diode may include a third pixel electrode, the embankment layer may include a first opening exposing a central portion of the first pixel electrode, a second opening exposing a central portion of the second pixel electrode, and a third opening exposing a central portion of the three pixel electrodes, and the first light-emitting diode may include a first intermediate layer disposed in the first opening, the second light-emitting diode may include a second intermediate layer disposed in the second opening, and the third light-emitting diode may include a third intermediate layer disposed in the third opening.

[0012] The hydrogen supply layer may be disposed under and overlap each of the first pixel electrode and the second pixel electrode.

[0013] An upper surface of the hydrogen supply layer may be in contact with a bottom surface of each of the first pixel electrode and the second pixel electrode.

[0014] The bank layer may cover an end portion of each of the first pixel electrode, the second pixel electrode, and the hydrogen supply layer.

[0015] In a plan view, the hydrogen supply layer overlapping the first pixel electrode may have the same area as the first pixel electrode, and the hydrogen supply layer overlapping the second pixel electrode may have the same area as the second pixel electrode.

[0016] The thickness of each of the first pixel electrode and the second pixel electrode may be about to about within the range.

[0017] The hydrogen supply layer may be disposed on upper portions of the first and second pixel electrodes, and may include a first hydrogen supply layer opening exposing a central portion of the first pixel electrode and a second hydrogen supply layer opening exposing a central portion of the second pixel electrode.

[0018] The hydrogen supply layer may cover end portions of the first pixel electrode and the second pixel electrode.

[0019] A side surface of the hydrogen supply layer facing the first light emitting diode may be in direct contact with the first intermediate layer, and a side surface of the hydrogen supply layer facing the second light emitting diode may be in direct contact with the second intermediate layer.

[0020] The first hydrogen supply layer opening may overlap with the first opening, and the second hydrogen supply layer opening may overlap with the second opening.

[0021] A bank layer may be provided on the hydrogen supply layer.

[0022] An entire lower surface of the bank layer disposed between the first light emitting diode and the second light emitting diode may be in contact with an upper surface of the hydrogen supply layer.

[0023] The display device may further include: a planarization layer disposed under each of the first pixel electrode, the second pixel electrode, and the third pixel electrode, wherein a portion of a lower surface of the embankment layer arranged between the first light-emitting diode and the third light-emitting diode may contact an upper surface of the hydrogen supply layer, and a remaining portion of a lower surface of the embankment layer arranged between the first light-emitting diode and the third light-emitting diode may contact an upper surface of the planarization layer.

[0024] A portion of a lower surface of the bank layer disposed between the second and third LEDs may contact an upper surface of the hydrogen supply layer, and a remaining portion of the lower surface of the bank layer disposed between the second and third LEDs may contact an upper surface of the planarization layer.

[0025] The display device may further include: an encapsulation substrate disposed on the first light emitting diode, the second light emitting diode, and the third light emitting diode; and a sealing member coupling the substrate to the encapsulation substrate, wherein the hydrogen supply layer may contact a surface of the encapsulation substrate facing the substrate.

[0026] The hydrogen supply layer may be arranged to overlap each of the first intermediate layer and the second intermediate layer.

[0027] The hydrogen supply layer may be in contact with an upper surface of the counter electrode.

[0028] Each of the first intermediate layer and the second intermediate layer may include an emission layer including a plurality of quantum dots, and the third intermediate layer may include an emission layer composed of an organic material.

[0029] The thickness of the hydrogen supply layer can be about to about within the range.

[0030] The first light emitting diode may be configured to emit light in a wavelength band of about 580 nm to about 780 nm, the second light emitting diode may be configured to emit light in a wavelength band of about 495 nm to about 580 nm, and the third light emitting diode may be configured to emit light in a wavelength band of about 380 nm to about 495 nm.

[0031] According to one or more embodiments, a display device may include: a substrate; a quantum dot light-emitting element disposed on the substrate; an organic light-emitting element disposed on the substrate; a dam layer disposed on the substrate; and a hydrogen supply layer arranged to overlap or be adjacent to the quantum dot light-emitting element, wherein the quantum dot light-emitting element and the organic light-emitting element may each include: a pixel electrode disposed on the substrate, the dam layer including an opening exposing a central portion of the pixel electrode; an intermediate layer disposed on the pixel electrode and in the opening; and a counter electrode covering the intermediate layer and the dam layer.

[0032] The intermediate layer of the quantum dot light emitting element may include an emission layer including a plurality of quantum dots, and the intermediate layer of the organic light emitting element may include an emission layer composed of an organic material.

[0033] The hydrogen supply layer may not overlap with the organic light emitting element, and may be arranged not to be adjacent to the organic light emitting element.

[0034] The hydrogen supply layer may overlap with the pixel electrode of the quantum dot light emitting element, and may be disposed under the pixel electrode of the quantum dot light emitting element.

[0035] The hydrogen supply layer may be disposed on the pixel electrode of the quantum dot light emitting element, and may include a hydrogen supply layer opening exposing a central portion of the pixel electrode.

[0036] The display device may further include: an encapsulation substrate disposed on the quantum dot light emitting element and the organic light emitting element; and a sealing member coupling the substrate to the encapsulation substrate, wherein the hydrogen supply layer may directly contact a surface of the encapsulation substrate facing the substrate.

[0037] The hydrogen supply layer may be arranged to overlap with the intermediate layer of the quantum dot light emitting element. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0039] Figure 1 is a schematic perspective view of a display device according to an embodiment;

[0040] Figure 2 yes Figure 1 A schematic diagram of an equivalent circuit of a pixel of a display device;

[0041] Figure 3A and Figure 3B is a schematic cross-sectional view of a display device according to an embodiment;

[0042] Figure 4 is a schematic plan view of a display device according to an embodiment;

[0043] Figure 5 is along Figure 4 The line I-I' intercepts Figure 4 A schematic cross-sectional view of a display device;

[0044] Figure 6 is a schematic cross-sectional view of a display device according to an embodiment; and

[0045] Figure 7 is a schematic cross-sectional view of a display device according to an embodiment. DETAILED DESCRIPTION

[0046] In the following description, for the purpose of explanation, many specific details are set forth in order to provide a thorough understanding of various embodiments or implementations of the present invention. As used herein, "embodiment" and "implementation" are interchangeable words, which are non-limiting examples of the equipment or methods disclosed herein. However, it is apparent that various embodiments may be put into practice without these specific details or with one or more equivalent arrangements. Here, various embodiments need not be exclusive, nor need they limit the present disclosure. For example, the specific shape, configuration, and characteristics of an embodiment may be used or implemented in another embodiment.

[0047] Unless otherwise specified, the illustrated embodiments will be understood to provide features of the present invention. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects of various embodiments, etc. (hereinafter referred to as "elements" individually or collectively) can be combined, separated, interchanged and / or rearranged in other ways without departing from the concept of the present invention.

[0048] The use of cross hatching and / or shadows in the drawings is generally provided to make the boundaries between adjacent elements clear. Therefore, unless otherwise specified, the presence or absence of cross hatching or shadows does not convey or indicate any preference or demand for a specific material, material properties, size, ratio, commonality between the illustrated elements and / or any other features, attributes, properties, etc. of these elements. In addition, in the drawings, the size and relative size of the elements may be exaggerated for the purpose of clarity and / or description. In the case where the embodiment can be implemented differently, a specific process sequence can be performed in a different order than described. For example, two processes described in succession can be performed approximately simultaneously or in an order opposite to the described order. In addition, the same figure numerals and / or reference characters refer to the same elements.

[0049] In the case where an element or layer is referred to as being "on" another element or layer, "connected to" or "coupled to" another element or layer, it may be directly on, directly connected to or coupled to the other element or layer, or there may be an intervening element or layer. However, in the case where an element or layer is referred to as being "directly on" another element or layer, "directly connected to" or "directly coupled to" another element or layer, there is no intervening element or layer. For this reason, the term "connected" may refer to a physical connection, an electrical connection, and / or a fluid connection with or without an intervening element. In addition, the x-axis direction, the y-axis direction, and the z-axis direction are not limited to directions corresponding to the three axes of a rectangular coordinate system (such as, the x-axis, the y-axis, and the z-axis), and may be interpreted in a broader sense. For example, the x-axis direction, the y-axis direction, and the z-axis direction may be perpendicular to each other, or may represent different directions that may not be perpendicular to each other.

[0050] For the purpose of this disclosure, "at least one of A and B" may be interpreted as only A, only B, or any combination of A and B. In addition, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0051] Although the terms "first", "second", etc. can be used in this article to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, the first element discussed below can be referred to as the second element without departing from the teachings of the present disclosure.

[0052] For descriptive purposes, spatially relative terms such as "below," "below," "under," "down," "above," "up," "above," "higher," and "side" (e.g., as in "sidewall") may be used herein and thereby describe the relationship of one element to another (or some) elements as illustrated in the figures. In addition to the orientations depicted in the figures, spatially relative terms are intended to cover different orientations of the device in use, operation, and / or manufacture. For example, if the device in the figure is flipped, an element described as being "below" or "below" other elements or features will then be oriented as being "above" the other elements or features. Thus, the term "below" can cover both above and below orientations. In addition, the device can be otherwise oriented (e.g., rotated 90 degrees or in other orientations), and therefore, the spatially relative descriptors used herein should be interpreted accordingly.

[0053] The terms used herein are for the purpose of describing a particular embodiment, and are not intended to be limiting. Unless the context clearly indicates otherwise, as used herein, the "one" and "the (described)" in the singular are intended to also include plural forms. In addition, the terms "comprise" and / or "include" and their variants are used in the present specification to specify the existence of stated features, integral bodies, steps, operations, elements, parts and / or their groups, but do not exclude the existence or addition of one or more other features, integral bodies, steps, operations, elements, parts and / or their groups. It should also be noted that, as used herein, the terms "roughly", "about" and other similar terms are used as approximate terms, and are not used as degree terms, and are therefore used to illustrate the inherent deviations of measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0054] Various embodiments are described herein with reference to cross-sectional illustrations and / or exploded illustrations as schematic illustrations of embodiments and / or intermediate structures. In this way, changes in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances will be expected. Therefore, the embodiments disclosed herein should not necessarily be interpreted as being limited to the shapes of the specifically illustrated zones, but will include deviations in the shapes due to, for example, manufacturing. In this manner, the zones illustrated in the drawings may be schematic in nature, and the shapes of these zones may not reflect the actual shapes of the zones of the device, and therefore, may not necessarily be intended to be limited.

[0055] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It will be further understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present disclosure, and should not be interpreted in an idealized or overly formal sense unless explicitly defined as such herein.

[0056] Figure 1 is a schematic perspective view of a display device 1 according to the embodiment.

[0057] refer to Figure 1 , the display device 1 may include a display area DA and a non-display area NDA on a substrate 100 .

[0058] The display area DA may be configured to display an image. A plurality of pixels PX arranged two-dimensionally in a plan view may be arranged in the display area DA. In this specification, each pixel PX represents a sub-pixel configured to emit light of a specific color. Each pixel PX may be, for example, one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel. The display device 1 may be configured to display an image based on the light emitted from the pixel PX.

[0059] The non-display area NDA may be an area configured not to display an image, and the pixels PX may not be arranged in the non-display area NDA. The non-display area NDA may completely surround the display area DA. A driver or voltage line configured to provide an electrical signal or power to the pixel PX may be arranged in the non-display area NDA. A pad portion (not shown) may be arranged in the non-display area NDA, wherein the pad portion may be an area to which an electronic component or a printed circuit board may be electrically connected.

[0060] The display area DA may have a polygonal shape. Figure 1 As shown in , the display area DA may have a rectangular shape in which its horizontal length may be greater than its vertical length. Alternatively, the display area DA may have a square shape. Alternatively, the display area DA may have various shapes such as an elliptical shape or a circular shape.

[0061] Figure 2 yes Figure 1 Schematic diagram of an equivalent circuit of a pixel PX of the display device 1.

[0062] refer to Figure 2, the pixel PX may include a pixel circuit PC and a light emitting element (e.g., a light emitting diode LED electrically connected to the pixel circuit PC). The pixel circuit PC may include a first thin film transistor T1, a second thin film transistor T2, and a storage capacitor Cst. Each pixel PX may be configured to emit, for example, red light, green light, or blue light by using a light emitting diode LED, or to emit red light, green light, blue light, or white light.

[0063] The second thin film transistor T2 may be a switching thin film transistor, may be electrically connected to the scan line SL and the data line DL, and may be configured to transmit a data voltage or a data signal Dm to the first thin film transistor T1 according to a switching voltage or a switching signal Sn, the data voltage is input from the data line DL, and the switching voltage is input from the scan line SL. The storage capacitor Cst may be electrically connected to the second thin film transistor T2 and the driving voltage line PL, and may be configured to store a voltage corresponding to a difference between a voltage transmitted from the second thin film transistor T2 and a first power supply voltage ELVDD supplied to the driving voltage line PL.

[0064] The first thin film transistor T1 may be a driving thin film transistor, may be electrically connected to the driving voltage line PL and the storage capacitor Cst, and may be configured to control a driving current according to a voltage stored in the storage capacitor Cst, the driving current flowing from the driving voltage line PL to the light emitting diode LED. The light emitting diode LED may be configured to emit light having a preset brightness corresponding to the driving current. The counter electrode (e.g., cathode) of the light emitting diode LED may receive a second power supply voltage ELVSS.

[0065] Despite Figure 2 2 shows that the pixel circuit PC includes two thin film transistors and one storage capacitor, but the number of thin film transistors and the number of storage capacitors may be variously changed depending on the design of the pixel circuit PC.

[0066] Figure 3A is a schematic cross-sectional view of a display device 1 according to the embodiment, and Figure 3B is a schematic cross-sectional view of a display device 1 according to the embodiment.

[0067] refer to Figure 3A , a display layer DPL and a thin film encapsulation layer TFE may be provided on a substrate 100 of a display device 1. The display layer DPL may include a pixel circuit layer PCL and a display element layer DEL, wherein the pixel circuit layer PCL includes a pixel circuit and an insulating layer, and the display element layer DEL may be disposed on the pixel circuit layer PCL and may include a plurality of display elements.

[0068] The substrate 100 may include glass, metal, polymer resin, or a combination thereof. The polymer resin may include, for example, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose acetate propionate, or a mixture thereof. The substrate 100 may have a multilayer structure including two layers each including a polymer resin and an inorganic material (such as silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ) or a combination thereof). However, various modifications may be made.

[0069] The display element layer DEL may include a display element, for example, an organic light emitting element and a quantum dot light emitting element, etc. The pixel circuit layer PCL may include a pixel circuit electrically connected to the light emitting element, and the pixel circuit layer PCL may further include an insulating layer. As an example, the pixel circuit layer PCL may include a plurality of transistors, a plurality of storage capacitors, and an insulating layer therebetween.

[0070] The display element may be covered by an encapsulation member such as a thin film encapsulation layer TFE. The thin film encapsulation layer TFE may include at least one inorganic encapsulation layer and at least one organic encapsulation layer, each of which covers the display element layer DEL. The inorganic encapsulation layer may include an organic encapsulation layer such as aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ), zinc oxide (ZnO x ), silicon oxide (SiO 2 ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ) or a combination thereof. The organic encapsulation layer may include a polymer material. The polymer material may include an acrylic resin, an epoxy resin, polyimide, polyethylene, or a combination thereof. In an embodiment, the organic encapsulation layer may include acrylate.

[0071] refer to Figure 3B, the display layer DPL and the encapsulation substrate 400 may be provided on the substrate 100 of the display device 1. The sealing member 300 may be provided between the substrate 100 and the encapsulation substrate 400. The encapsulation substrate 400 may be a transparent member. The substrate 100 and the encapsulation substrate 400 may be coupled to each other by the sealing member 300, and a structure of an internal space C between the substrate 100 and the encapsulation substrate 400 may be provided. A moisture absorbent or a filler may be provided in the internal space C. The sealing member 300 may be a sealant. In an embodiment, the sealing member 300 may include a material cured by a laser beam. As an example, the sealing member 300 may include glass frit. Specifically, the sealing member 300 may include an organic sealant such as a urethane resin, an epoxy resin, an acrylic resin, or a combination thereof, or may include an inorganic sealant such as silicon. As a urethane resin, for example, urethane acrylate or the like may be used. As an acrylic resin, for example, butyl acrylate, ethylhexyl acrylate, or the like or a combination thereof may be used. The sealing member 300 may include a material cured by heat.

[0072] In an embodiment, the display element layer DEL may be Figure 3A The thin film encapsulation layer TFE is Figure 3B The packaging substrate 400 and the sealing member 300 are covered.

[0073] The touch electrode layer (not shown) may be disposed on the thin film encapsulation layer TFE and / or the encapsulation substrate 400, and the optical function layer (not shown) may be disposed on the touch electrode layer. The touch electrode layer may obtain coordinate information corresponding to an external input (e.g., a touch event). The optical function layer may reduce the reflectivity of light (external light) incident from the outside toward the display device 1. Alternatively, the optical function layer may improve the color purity of light emitted from the display device 1. In an embodiment, the optical function layer may include a phase retarder and / or a polarizer. The retarder may include a film-type retarder or a liquid crystal retarder. The retarder may include a λ / 2 retarder and / or a λ / 4 retarder. The polarizer may include a film-type polarizer or a liquid crystal polarizer. The film-type polarizer may include a stretched synthetic resin film, and the liquid crystal polarizer may include liquid crystals arranged in an arrangement manner. Each of the phase retarder and the polarizer may further include a protective film.

[0074] In an embodiment, the optical functional layer may include a black matrix and a color filter. The color filter may be arranged by considering the color of light emitted from the pixels PX of the display device 1 respectively. The color filters may each include a red, green or blue pigment or dye. In addition to these pigments or dyes, the color filters may each further include quantum dots. Some of the color filters may not include pigments or dyes, and may include scattering particles such as titanium oxide.

[0075] Figure 4 is a schematic plan view of a display device 1 according to the embodiment. Figure 4 1 is a plan view of a portion A of a display area DA of the display device 1 .

[0076] refer to Figure 4 The display device 1 may include a pixel PX (see Figure 1 ). Pixel PX (see Figure 1 ) may include a first pixel PX1, a second pixel PX2, and a third pixel PX3. The first pixel PX1 may include a first light emitting diode LED1 (see Figure 5 ), the second pixel PX2 may include a second light emitting diode LED2 (see Figure 5 ), and the third pixel PX3 may include a third light emitting diode LED3 (see Figure 5 ). The first pixel PX1, the second pixel PX2, and the third pixel PX3 may be configured to emit light of different colors, respectively. As an example, the first pixel PX1 may be configured to emit red light, the second pixel PX2 may be configured to emit green light, and the third pixel PX3 may be configured to emit blue light. The red light may be light in a wavelength band of about 580 nm to about 780 nm, the blue light may be light in a wavelength band of about 380 nm to about 495 nm, and the green light may be light in a wavelength band of about 495 nm to about 580 nm.

[0077] Each light emitting diode may include a pixel electrode, a counter electrode, and an intermediate layer therebetween. Accordingly, the first pixel PX1 may include a first light emitting diode LED1 (see Figure 5 ) of the first pixel electrode 211, the second pixel PX2 may include a second light emitting diode LED2 (see Figure 5 ) of the second pixel electrode 212, and the third pixel PX3 may include a third light emitting diode LED3 (see Figure 5 ) of the third pixel electrode 213. The first pixel electrode 211, the second pixel electrode 212, and the third pixel electrode 213 may be separated from each other on the substrate 100 (see Figure 5 ). In this specification, "in a plan view" means "when the object is viewed from above", wherein "above" means "in a direction perpendicular to the substrate 100". That is, "A and B are separated from each other in a plan view" means "A and B are spaced apart from each other when viewed from above or in a direction perpendicular to the substrate 100".

[0078] The bank layer 120 may be disposed on the first pixel electrode 211, the second pixel electrode 212, and the third pixel electrode 213, and may cover an edge of each of the first pixel electrode 211, the second pixel electrode 212, and the third pixel electrode 213. The bank layer 120 may include a first opening 120OP1 exposing a central portion of the first pixel electrode 211, a second opening 120OP2 exposing a central portion of the second pixel electrode 212, and a third opening 120OP3 exposing a central portion of the third pixel electrode 213.

[0079] Despite Figure 4 Although not shown in the figure, an emission layer configured to emit light can be respectively disposed in the first opening 120OP1, the second opening 120OP2, and the third opening 120OP3 of the bank layer 120. The counter electrode can be disposed on the emission layer. As described above, the stacked structure of the pixel electrode, the emission layer, and the counter electrode can form a light-emitting diode. One opening of the bank layer 120 can correspond to one light-emitting diode and define an emission area.

[0080] As an example, an emission layer configured to emit red light (which is also referred to as a "first intermediate layer") can be disposed in the first opening 120OP1, and the first opening 120OP1 can define a first emission area EA1. Similarly, an emission layer configured to emit green light (which is also referred to as a "second intermediate layer") can be disposed in the second opening 120OP2, and the second opening 120OP2 can define a second emission area EA2. An emission layer configured to emit blue light (which is also referred to as a "third intermediate layer") can be disposed in the third opening 120OP3, and the third opening 120OP3 can define a third emission area EA3. Accordingly, the area size of the first opening 120OP1 is the same as the area size of the first emission area EA1, the area size of the second opening 120OP2 can be the same as the area size of the second emission area EA2, and the area size of the third opening 120OP3 can be the same as the area size of the third emission area EA3.

[0081] When the substrate 100 (see Figure 5 ), each of the first opening 120OP1, the second opening 120OP2, and the third opening 120OP3 may have a polygonal shape. In other words, when viewed in a direction perpendicular to the substrate 100 (z-axis direction), each of the first emission area EA1, the second emission area EA2, and the third emission area EA3 may have a polygonal shape. Figure 4, when viewed in a direction perpendicular to the substrate 100 (z-axis direction), each of the first emission area EA1, the second emission area EA2, and the third emission area EA3 has a quadrilateral shape, specifically, a quadrilateral shape with rounded corners. However, the present embodiment may not be limited thereto. As an example, when viewed in a direction perpendicular to the substrate 100 (z-axis direction), each of the first emission area EA1, the second emission area EA2, and the third emission area EA3 may have a circular shape or an elliptical shape.

[0082] Figure 5 is along Figure 4 The line I-I' intercepts Figure 4 Schematic cross-sectional view of a display device 1.

[0083] refer to Figure 5 , the pixel circuit layer PCL may be disposed on the substrate 100. The pixel circuit layer PCL may include first to third transistors TR1, TR2, and TR3 and a buffer layer 111, a first gate insulating layer 113, a second gate insulating layer 115, an interlayer insulating layer 117, and a planarization layer 119 below and / or above the elements of the transistors. Here, each of the first to third transistors TR1, TR2, and TR3 may correspond to Figure 2 Since the structures of the second transistor TR2 and the third transistor TR3 may be the same as or similar to the structure of the first transistor TR1, repeated description thereof may be omitted.

[0084] The buffer layer 111 may include silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), silicon oxide (SiO x ) or a combination thereof, and includes a single-layer structure or a multi-layer structure including the inorganic insulating material. The buffer layer 111 can improve the flatness of the upper surface of the substrate 100 and prevent or reduce impurities from penetrating from the substrate 100 and the like into the semiconductor layer Act.

[0085] The first transistor TR1 may include a semiconductor layer Act, and the semiconductor layer Act may include polysilicon. Alternatively, the semiconductor layer Act may include amorphous silicon, an oxide semiconductor material, an organic semiconductor material, or a combination thereof.

[0086] The gate electrode GE may overlap a portion of the semiconductor layer Act. The gate electrode GE may include a conductive material. As an example, the gate electrode GE may include a conductive material such as molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or a combination thereof, and have a single-layer structure or a multi-layer structure including the above materials.

[0087] The first gate insulating layer 113 between the semiconductor layer Act and the gate electrode GE may include silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ), zinc oxide (ZnO x , which may be ZnO and / or ZnO 2 ) or a combination thereof.

[0088] The second gate insulating layer 115 may cover the gate electrode GE. Similar to the first gate insulating layer 113, the second gate insulating layer 115 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ), zinc oxide (ZnO x , which may be ZnO and / or ZnO 2 ) or a combination thereof.

[0089] The upper electrode CE2 of the storage capacitor Cst may be disposed on the second gate insulating layer 115. The upper electrode CE2 may overlap the gate electrode GE disposed below the upper electrode CE2. The gate electrode GE and the upper electrode CE2 overlapping each other with the second gate insulating layer 115 disposed therebetween may constitute the storage capacitor Cst. The gate electrode GE may serve as the lower electrode CE1 of the storage capacitor Cst.

[0090] As described above, the storage capacitor Cst may overlap with the first transistor TR1. In an embodiment, the storage capacitor Cst may be disposed not to overlap with the first transistor TR1.

[0091] The upper electrode CE2 may include a conductive material such as aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), or a combination thereof, and include a single-layer structure or a multi-layer structure containing, for example, the above-mentioned materials.

[0092] The interlayer insulating layer 117 may cover the upper electrode CE2. The interlayer insulating layer 117 may include silicon oxide (SiO x ), Silicon Nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ), zinc oxide (ZnO x , which may be ZnO and / or ZnO 2 ) or a combination thereof. The interlayer insulating layer 117 may include a single layer structure or a multilayer structure including, for example, the inorganic insulating material.

[0093] The drain electrode SD1 and the source electrode SD2 may each be disposed on the interlayer insulating layer 117. The drain electrode SD1 and the source electrode SD2 may each be electrically connected to the semiconductor layer Act through a contact hole formed in the first gate insulating layer 113, the second gate insulating layer 115, and the interlayer insulating layer 117. The drain electrode SD1 and the source electrode SD2 may each include a material having high conductivity. The drain electrode SD1 and the source electrode SD2 may each include a conductive material such as molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or a combination thereof, and include a single-layer structure or a multilayer structure including, for example, the above-mentioned materials. In an embodiment, the drain electrode SD1 and the source electrode SD2 may each have a multilayer structure of Ti / Al / Ti. In an embodiment, one of the drain electrode SD1 and the source electrode SD2 may be omitted, and a portion of the semiconductor layer Act may be made conductive to replace it.

[0094] The planarization layer 119 may cover the first transistor TR1 and include a contact hole exposing a portion of the first transistor TR1. The planarization layer 119 may include an organic insulating layer. The planarization layer 119 may include an organic insulating material including a general polymer such as polymethyl methacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a paraxylene polymer, a vinyl alcohol polymer, or a mixture thereof.

[0095] The hydrogen supply layer 130 may be disposed on the planarization layer 119. The hydrogen supply layer 130 may include a first hydrogen supply layer 131 corresponding to the first pixel PX1 and a second hydrogen supply layer 132 corresponding to the second pixel PX2. The hydrogen supply layer 130 may be arranged adjacent to the first light emitting diode LED1 and the second light emitting diode LED2 to supply hydrogen to the emission layer. The hydrogen supply layer 130 may be described in detail below.

[0096] The display element layer DEL may be disposed on the pixel circuit layer PCL and the hydrogen supply layer 130. The display element layer DEL may include first to third light emitting diodes LED1, LED2, and LED3 and a bank layer 120 below or / and on the elements of the light emitting diodes. In an embodiment, the first light emitting diode LED1 and the second light emitting diode LED2 may be quantum dot light emitting elements, and the third light emitting diode LED3 may be an organic light emitting element. As an example, the first light emitting diode LED1 configured to emit red light and the second light emitting diode LED2 configured to emit green light may include an emission layer including quantum dots, and the third light emitting diode LED3 configured to emit blue light may include an emission layer that does not include quantum dots and includes only organic materials.

[0097] Each of the first to third light emitting diodes LED1, LED2, and LED3 may include a portion of a pixel electrode arrangement 210. The pixel electrode arrangement 210 may include a first pixel electrode 211 forming the first light emitting diode LED1, a second pixel electrode 212 forming the second light emitting diode LED2, and a third pixel electrode 213 forming the third light emitting diode LED3. The first to third pixel electrodes 211, 212, and 213 may be disposed on the pixel circuit layer PCL. The first pixel electrode 211 may be electrically connected to the drain electrode SD1 or the source electrode SD2 of the first transistor TR1 through a contact hole passing through the planarization layer 119. Figure 5 As shown in , the first pixel electrode 211 , the second pixel electrode 212 , and the third pixel electrode 213 may be separated from each other by a preset distance in the second direction (eg, the x-axis direction).

[0098] The pixel electrode arrangement 210 may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. In order to form the pixel electrode arrangement 210 which may be a transmissive electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO) or any combination thereof as the material of the pixel electrode arrangement 210. In order to form the pixel electrode arrangement 210 which can be a semi-transmissive electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum lithium (Al-Li), calcium (Ca), magnesium indium (Mg-In) and magnesium silver (Mg-Ag) or any combination thereof can be used as the material of the pixel electrode arrangement 210. The pixel electrode arrangement 210 can have a single-layer structure consisting of a single layer or a multi-layer structure including multiple layers. As an example, the pixel electrode arrangement 210 can have a three-layer structure of ITO / Ag / ITO.

[0099] The bank layer 120 may be disposed on the pixel circuit layer PCL. The bank layer 120 may cover the edges of the first to third pixel electrodes 211, 212, and 213. Specifically, the bank layer 120 may directly contact the upper surface and the side surface of the end of the pixel electrode of the pixel electrode arrangement 210. Figure 5 As shown in , in the case where the hydrogen supply layer 130 is disposed below the pixel electrode arrangement 210 , the bank layer 120 may also cover the edge of the hydrogen supply layer 130 .

[0100] The bank layer 120 may include various materials. In an embodiment, the bank layer 120 may include an organic material such as acrylic acid, BCB (benzocyclobutene), HMDSO (hexamethyldisiloxane), or a combination thereof. In an embodiment, the bank layer 120 may include a photoresist, that is, a photosensitive resin. Specifically, the bank layer 120 may include a negative photoresist that undergoes a reaction such as cross-linking when exposed.

[0101] The bank layer 120 may include a plurality of openings OP, and the plurality of openings OP may include a first opening 120OP1 exposing a central portion of the first pixel electrode 211, a second opening 120OP2 exposing a central portion of the second pixel electrode 212, and a third opening 120OP3 exposing a central portion of the third pixel electrode 213. As an example, the bank layer 120 may define a first emission area EA1 of the first light emitting diode LED1, a second emission area EA2 of the second light emitting diode LED2, and a third emission area EA3 of the third light emitting diode LED3. The bank layer 120 may prevent arcing, etc., from occurring at the edge of the pixel electrode in the pixel electrode arrangement 210 by increasing the distance between the edge of the pixel electrode in the pixel electrode arrangement 210 and the counter electrode 230.

[0102] The emission layer 220 may be disposed in the opening OP of the bank layer 120. The emission layer 220 may include a first emission layer 221 forming a first light emitting diode LED1, a second emission layer 222 forming a second light emitting diode LED2, and a third emission layer 223 forming a third light emitting diode LED3. As an example, the first emission layer 221 may be disposed on the first pixel electrode 211 and disposed in the first opening 120OP1. Similarly, the second emission layer 222 may be disposed on the second pixel electrode 212 and disposed in the second opening 120OP2. The third emission layer 223 may be disposed on the third pixel electrode 213 and disposed in the third opening 120OP3.

[0103] In an embodiment, the first emission layer 221 and the second emission layer 222 may include quantum dots. Specifically, the quantum dots included in the first emission layer 221 and the second emission layer 222 may be used as dopants, and the first emission layer 221 and the second emission layer 222 may further include a host and / or a delayed fluorescent material. Quantum dots represent crystals of semiconductor compounds. The quantum dots may be configured to emit light at various emission wavelengths depending on the size of the crystals. The quantum dots may be configured to emit light at various emission wavelengths by adjusting the ratio of the elements constituting the quantum dots. As an example, the diameter of the quantum dots may be in the range of about 1 nm to about 10 nm.

[0104] Quantum dots can be synthesized by wet chemical processes, metal organic chemical vapor deposition processes, molecular beam epitaxy processes or similar processes. A wet chemical process can be a method of mixing an organic solvent with a precursor material and growing a quantum dot crystal. In the case of crystal growth, the organic solvent naturally acts as a dispersant coordinated on the surface of the quantum dot crystal and controls crystal growth. Accordingly, a wet chemical process can be easier than vapor deposition such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and can be configured to control the growth of quantum dot particles by a low-cost process.

[0105] The quantum dots may include one of Group II-VI semiconductor compounds, Group III-V semiconductor compounds, Group III-VI semiconductor compounds, Group I-III-VI semiconductor compounds, Group IV-VI semiconductor compounds, Group IV elements or compounds, and any combination thereof.

[0106] Examples of II-VI semiconductor compounds may include one of the following: a binary compound containing CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS; a binary compound containing CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe , CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe or MgZnS; a ternary compound comprising CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe or HgZnSTe; and any combination thereof.

[0107] Examples of III-V semiconductor compounds may include one of the following: binary compounds including GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb; ternary compounds including GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and InPSb; quaternary compounds including GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; and any combination thereof. The III-V semiconductor compound may further include a Group II element. Examples of the Group III-V semiconductor compound further including the Group II element may include InZnP, InGaZnP, or InAlZnP.

[0108] Examples of III-VI semiconductor compounds may include one of the following: 2 S 3 ,GaSe,Ga 2 Se 3 、GaTe、InS、InSe、In 2 S 3 、In 2 Se 3 Binary compounds of InTe and InGaS 3 and InGaSe3 Ternary compounds; and any combinations thereof.

[0109] Examples of Group I-III-VI semiconductor compounds may include one of the following: AgInS, AgInS 2 、AgInSe 2 、AgGaS、AgGaS 2 、AgGaSe 2 、CuInS、CuInS 2 、CuInSe 2 、CuGaS 2 、CuGaSe 2 、CuGaO 2 、AgGaO 2 and AgAlO 2 Ternary compounds; including AgInGaS 2 、AgInGaSe 2 and a quaternary compound of CuInGaS; and any combination thereof.

[0110] Examples of IV-VI semiconductor compounds may include one of the following: a binary compound comprising SnS, SnSe, SnTe, PbS, PbSe and PbTe; a ternary compound comprising SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and SnPbTe; a quaternary compound comprising SnPbSSe, SnPbSeTe and SnPbSTe; and any combination thereof.

[0111] Examples of the Group IV element or compound may include one of: a single element including Si and Ge; a binary compound including SiC and SiGe; and any combination thereof.

[0112] Each element contained in a multinary compound such as a binary compound, a ternary compound, and a quaternary compound may be present in a particle at a uniform concentration or a non-uniform concentration. The chemical formula refers to the type of element contained in the compound, and the ratio of elements within the compound may be different. For example, AgInGaS 2 Can refer to AgIn x Ga 1-x S 2 (x can be a real number between 0 and 1).

[0113] The quantum dot may have a single structure in which the concentration of each element contained in the relevant quantum dot may be uniform or a dual structure of a core-shell. As an example, the material of the core may be different from the material of the shell. The shell may cover at least a portion of the core.

[0114] The core may include, for example, Cd, Zn, Hg, Mg, Ga, Al, In, Sn, Pb, Se, Te, P, or Sb.

[0115] The shell of a quantum dot can be used as a protective layer to prevent chemical changes in the core to maintain semiconductor properties and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can include a single layer or multiple layers. The interface between the core and the shell can have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0116] Examples of the shell of the quantum dot include metal or non-metal oxides, semiconductor compounds, or combinations thereof. Examples of metal or non-metal oxides may include one of the following: 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 Binary compounds of NiO; containing MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 、CoMn 2 O 4 and any combination thereof. Examples of semiconductor compounds may include one of the II-VI semiconductor compounds, III-V semiconductor compounds, III-VI semiconductor compounds, I-III-VI semiconductor compounds, IV-VI semiconductor compounds, and any combination thereof as described in this specification. As examples, semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaS, GaSe, AgGaS, AgGaS 2 , GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb and any combination thereof.

[0117] The quantum dots may have a full width at half maximum (FWHM) of a light emission wavelength spectrum of about 45 nm or less, specifically about 40 nm or less, and more specifically about 30 nm or less. Within this range, color purity or color reproducibility may be improved. Since light emitted from quantum dots may be emitted in all directions, the viewing angle of light may be improved.

[0118] The shape of the quantum dots can be spherical, pyramidal, multi-armed or cubic nanoparticles, nanotubes, nanowires, nanofibers or nanoplates, etc.

[0119] Because the energy band gap can be adjusted by adjusting the size of the quantum dots or the ratio of elements in the quantum dot compound, light of various wavelengths can be obtained from the quantum dot emission layer. Accordingly, a light-emitting element configured to emit light of various wavelengths can be realized by using quantum dots (using quantum dots of different sizes or using different ratios of elements in quantum dot compounds). Specifically, the size of the quantum dots or the ratio of elements in the quantum dot compound can be adjusted so that red light, green light and / or blue light can be emitted. Quantum dots can be configured so that light of various colors can be combined to emit white light.

[0120] The third emission layer 223 may be an emission layer that does not contain quantum dots and only contains organic materials. Specifically, the third emission layer 223 may include an organic material containing a fluorescent material or a phosphorescent material that emits red light, green light, blue light, or white light. The third emission layer 223 may be an organic emission layer containing a low molecular weight organic material or a polymer organic material. As an example, the third emission layer 223 may be an organic emission layer and may include copper phthalocyanine, tri-(8-hydroxyquinoline) aluminum, polyphenylene vinylene-based materials, polyfluorene-based materials, or combinations thereof.

[0121] Despite Figure 5 Although not shown in the figure, the intermediate layer may further include a common layer disposed between the pixel electrode arrangement 210 and the emission layer 220 and / or between the emission layer 220 and the counter electrode 230. Hereinafter, the common layer disposed between the pixel electrode arrangement 210 and the emission layer 220 may be referred to as a first common layer, and the common layer disposed between the emission layer 220 and the counter electrode 230 may be referred to as a second common layer. The first common layer and the second common layer may each include an organic material.

[0122] The first common layer may be a hole transport region, and may include a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer, or any combination thereof. As an example, the first common layer may have a multilayer structure of a hole injection layer / hole transport layer, a hole injection layer / hole transport layer / emission auxiliary layer, a hole injection layer / emission auxiliary layer, a hole transport layer / emission auxiliary layer, or a hole injection layer / hole transport layer / emission auxiliary layer, which may be sequentially stacked from the pixel electrode arrangement 210.

[0123] The second common layer may be an electron transport region and may include a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, an electron injection layer, or any combination thereof. As an example, the second common layer may have a multilayer structure of an electron transport layer / electron injection layer, a hole blocking layer / electron transport layer / electron injection layer, an electron control layer / electron transport layer / electron injection layer, or a buffer layer / electron transport layer / electron injection layer, which may be sequentially stacked from the emission layer 220.

[0124] The counter electrode 230 may cover the emission layer 220 and the bank layer 120. As an example, the counter electrode 230 may be integrally provided to cover the entire surface of the substrate 100 to cover the first emission layer 221, the second emission layer 222, and the third emission layer 223. A metal, alloy, conductive compound, or any combination thereof having a low work function may be used as a material for the counter electrode 230. The counter electrode 230 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum lithium (Al-Li), calcium (Ca), magnesium indium (Mg-In), magnesium silver (Mg-Ag), ytterbium (Yb), silver ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The counter electrode 230 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode. The counter electrode 230 may have a single-layer structure in which it may be a single layer or a multi-layer structure in which it may be a multi-layer.

[0125] The display device 1 may have a structure including both a quantum dot light emitting element and an organic light emitting element. The quantum dot light emitting element has the advantages of low manufacturing cost and excellent color coordinates. However, in the case of a light emitting element configured to emit blue light, the organic light emitting element may have the advantage of a long service life than the quantum dot light emitting element. In the display device 1 according to the embodiment, since the first light emitting diode LED1 and the second light emitting diode LED2 adopt quantum dot light emitting elements, and the third light emitting diode LED3 may adopt an organic light emitting element, the color purity and color reproducibility may be improved, and therefore, the display device 1 may not only have excellent emission characteristics, but also simultaneously achieve a long service life effect. However, the present embodiment may not be limited to a structure in which the first light emitting diode LED1 and the second light emitting diode LED2 adopt quantum dot light emitting elements and the third light emitting diode LED3 adopts an organic light emitting element. The first light emitting diode LED1 or the second light emitting diode LED2 may adopt an organic light emitting element, and the third light emitting diode LED3 may adopt a quantum dot light emitting element.

[0126] In an embodiment, the first emission layer 221 and the second emission layer 222, which may be emission layers containing quantum dots, may include a metal oxide containing Zn. As an example, the first emission layer 221 and the second emission layer 222 may include ZnMgO. ZnMgO may be a material required to improve the emission efficiency and service life of the first light-emitting diode LED1 and the second light-emitting diode LED2, which may be quantum dot light-emitting elements. However, during the process of synthesizing the material for forming the emission layer, defects may occur in ZnMgO or ZnO, and these defects may deteriorate the emission efficiency and service life of the light-emitting diode LED.

[0127] In contrast, in the display device 1 according to the embodiment, since the hydrogen supply layer 130 may be arranged to overlap with the first light emitting diode LED1 and the second light emitting diode LED2, defects due to ZnMgO may be reduced. The hydrogen supply layer 130 may be arranged adjacent to the quantum dot light emitting element. Specifically, the hydrogen supply layer 130 may be provided under the pixel electrode arrangement 210 of each of the first light emitting diode LED1 and the second light emitting diode LED2. In other words, the hydrogen supply layer 130 may be arranged not to overlap with the third light emitting diode LED3, which may be an organic light emitting element, and not to be adjacent to the third light emitting diode LED3.

[0128] exist Figure 5In an embodiment of the present invention, the hydrogen supply layer 130 may include a first hydrogen supply layer 131 disposed under the first pixel electrode 211 and a second hydrogen supply layer 132 disposed under the second pixel electrode 212. The first hydrogen supply layer 131 may be in contact with the bottom surface of the first pixel electrode 211, and the second hydrogen supply layer 132 may be in contact with the bottom surface of the second pixel electrode 212. The first hydrogen supply layer 131 may have the same area as the first pixel electrode 211 in a plan view, and the second hydrogen supply layer 132 may have the same area as the second pixel electrode 212 in a plan view. Accordingly, the bank layer 120 may cover the ends of the first pixel electrode 211 and the first hydrogen supply layer 131 and the ends of the second pixel electrode 212 and the second hydrogen supply layer 132. However, the area of ​​the hydrogen supply layer 130 does not necessarily have to be the same as the area of ​​the corresponding pixel electrode of the pixel electrode arrangement 210, and may be larger or smaller than the area of ​​the corresponding pixel electrode of the pixel electrode arrangement 210.

[0129] The hydrogen supply layer 130 may include a silicon-based inorganic layer containing hydrogen. In an embodiment, the hydrogen supply layer 130 may contain hydrogen and may include silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y ) at least one of. As an example, the hydrogen supply layer 130 may include hydrogenated amorphous silicon nitride (a-SiN:H). Because the hydrogen supply layer 130 including hydrogenated amorphous silicon nitride (a-SiN:H) may be disposed in contact with the lower surface of the pixel electrode arrangement 210, hydrogen may be supplied to the emission layer 220 disposed on the pixel electrode arrangement 210. The first hydrogen supply layer 131 may be configured to supply hydrogen to the first emission layer 221 through the first pixel electrode 211, and the second hydrogen supply layer 132 may be configured to supply hydrogen to the second emission layer 222 through the second pixel electrode 212. The hydrogen supply layer 130 may contain a high hydrogen concentration to supply hydrogen to the first emission layer 221 and the second emission layer 222. As an example, based on thermal desorption spectroscopy (TDS) analysis, the amount of hydrogen released from the hydrogen supply layer 130 may be 1.0E +20 Molecules / cm 3 or greater. The hydrogen supply layer 130 may contain more than 1.0 E +20 A hydrogen molecule.

[0130] The thickness of the hydrogen supply layer 130 may be about to about Specifically, the hydrogen supply layer 130 must have at least about The thickness of the hydrogen supply layer 130 may be less than about 1000 Å to smoothly supply hydrogen to the emission layer 220. However, in the case where the thickness of the hydrogen supply layer 130 becomes too thick, the thickness of the display device 1 also becomes thick, and therefore, the thickness of the hydrogen supply layer 130 may be less than about 1000 Å. The thickness of the first pixel electrode 211 and the second pixel electrode 212 disposed on the hydrogen supply layer 130 may be about 1000 mm / s. to about This is because, when the thickness of the first pixel electrode 211 and the second pixel electrode 212 is about or less, it may be disadvantageous for current to be injected into the emission layer 220, and when the thickness of the first pixel electrode 211 and the second pixel electrode 212 is about or greater, it may be difficult to supply hydrogen to the emission layer 220 .

[0131] In the case where the first emission layer 221 and the second emission layer 222 may be supplied with hydrogen through the hydrogen supply layer 130, the ZnMgO contained in the first emission layer 221 and the second emission layer 222 reacts with the hydrogen and defects may be reduced. Figure 5 The display device 1 may improve emission efficiency and increase service life by reducing defects in the first light emitting diode LED1 and the second light emitting diode LED2 which may include quantum dots.

[0132] In order to solve the defects caused by ZnMgO in the quantum dot emission layer, a polyacrylic acid (PAA) solution may be applied to the encapsulation substrate 400 (see Figure 3B ) process. Figure 5 As shown in FIG. , in the case of hydrogenated silicon nitride (SiN x ) is disposed under the pixel electrode arrangement 210, mass production can be ensured compared to a process using a PAA solution. Specifically, the PAA solution is applied to the encapsulation substrate 400 ( Figure 3B ) and the method of bonding it may cause defects such as smoke, but Figure 5 The hydrogen supply layer 130 shown in FIG. 1 may be deposited (eg, directly deposited) on the substrate 100, and thus, defects such as smoke may be prevented. The PAA solution may be difficult to form uniformly because it must undergo a process of forming a PAA solution on the package substrate 400 (see FIG. 1 ). Figure 3B ) on a process such as inkjet printing, slot coating or spin coating, and Figure 5 The hydrogen supply layer 130 shown in FIG. 1 can be formed using a deposition method, and accordingly, a uniform patterning effect can be achieved. As a result, in the display device 1 according to the embodiment, not only defects can be reduced, but also mass production can be ensured.

[0133] Despite Figure 5 Not shown, but in order to protect the light emitting diode LED, Figure 5 In the embodiment, a thin film encapsulation layer TFE (see FIG. 1 ) covering the first to third light emitting diodes LED1, LED2 and LED3 may be provided. Figure 3A ). Thin film encapsulation layer TFE (see Figure 3A ) may include at least one inorganic encapsulation layer and at least one organic encapsulation layer, each of which covers the light emitting diode LED. In an embodiment, a package substrate 400 (see Figure 3B ). The packaging substrate 400 (see Figure 3B ) can be passed through the sealing member 300 (see Figure 3B ) is connected to the substrate 100 to encapsulate the light emitting diode LED.

[0134] Figure 6 is a schematic cross-sectional view of a display device 1' according to an embodiment. Figure 6 , other characteristics except the characteristics of the hydrogen supply layer 130 ′ can be compared with reference Figure 4 and Figure 5 The same characteristics as those described in Figure 6 The same reference numerals as previously referenced in the elements Figure 4 and Figure 5 The reference numerals are replaced with those described, and the differences may be described below.

[0135] refer to Figure 6 , the first light emitting diode LED1 and the second light emitting diode LED2 may be quantum dot light emitting elements, and the third light emitting diode LED3 may be an organic light emitting element. The first emission layer 221 and the second emission layer 222 may include emission materials containing quantum dots, and the third emission layer 223 may include emission materials containing only organic materials. Accordingly, Figure 6 The display device 1' can not only have excellent emission characteristics by improving color purity and color reproducibility, but also can simultaneously achieve a long service life effect.

[0136] However, as described above, since the first emission layer 221 and the second emission layer 222 of the quantum dot light emitting element contain ZnMgO, defects may occur. In the case where the hydrogen supply layer 130' can be arranged adjacent to the quantum dot light emitting element (e.g., the first light emitting diode LED1 and the second light emitting diode LED2), hydrogen can be supplied to the first emission layer 221 and the second emission layer 222, and the ZnMgO in the first emission layer 221 and the second emission layer 222 can react with hydrogen and reduce defects.

[0137] exist Figure 6 In the display device 1', the hydrogen supply layer 130' may be disposed on the pixel electrode arrangement 210. The hydrogen supply layer 130' may cover an end portion of each of the first pixel electrode 211 and the second pixel electrode 212, and include a hydrogen supply layer opening 130OP exposing a central portion of each pixel electrode in the pixel electrode arrangement 210. As an example, the hydrogen supply layer 130' may include a first hydrogen supply layer opening 130OP1 exposing a central portion of the first pixel electrode 211 and a second hydrogen supply layer opening 130OP2 exposing a central portion of the second pixel electrode 212. The first hydrogen supply layer opening 130OP1 may overlap with the first opening 120OP1 of the bank layer 120, and the second hydrogen supply layer opening 130OP2 may overlap with the second opening 120OP2 of the bank layer 120. Accordingly, in a direction perpendicular to the substrate 100, the hydrogen supply layer 130OP may be formed. Figure 6 , the hydrogen supply layer 130' may include a first portion 133 of the hydrogen supply layer 130', a second portion 134 of the hydrogen supply layer 130', and a third portion 135 of the hydrogen supply layer 130'. However, the first portion 133 of the hydrogen supply layer 130', the second portion 134 of the hydrogen supply layer 130', and the third portion 135 of the hydrogen supply layer 130' may be integral with each other.

[0138] The first portion 133 of the hydrogen supply layer 130' may be arranged between the third pixel PX3 and the first pixel PX1, and may be arranged adjacent to the first light emitting diode LED1. The first portion 133 of the hydrogen supply layer 130' may be arranged not adjacent to the third light emitting diode LED3. Accordingly, the side surface of the first portion 133 of the hydrogen supply layer 130' facing the first light emitting diode LED1 may be in direct contact with the first emission layer 221, and the end of the first portion 133 facing the opposite side may be covered by the embankment layer 120. In other words, the first portion 133 of the hydrogen supply layer 130' may be arranged between the first pixel electrode 211 and the embankment layer 120, and may be in contact with only a portion of the bottom surface of the embankment layer 120. As an example, a portion of the bottom surface of the bank layer 120 disposed between the first light emitting diode LED1 and the third light emitting diode LED3 may be in contact with the upper surface of the first portion 133 of the hydrogen supply layer 130', and the remaining portion of the bottom surface of the bank layer 120 disposed between the first light emitting diode LED1 and the third light emitting diode LED3 may be in contact with the upper surface of the planarization layer 119. The first portion 133 of the hydrogen supply layer 130' may overlap with a region corresponding to approximately half of the horizontal width of the bank layer 120 disposed between the first light emitting diode LED1 and the third light emitting diode LED3.

[0139] Likewise, the third portion 135 of the hydrogen supply layer 130' may be arranged between the second pixel PX2 and the third pixel PX3, and may be arranged adjacent to the second light emitting diode LED2. The third portion 135 of the hydrogen supply layer 130' may be arranged not adjacent to the third light emitting diode LED3. Accordingly, the side surface of the third portion 135 of the hydrogen supply layer 130' facing the second light emitting diode LED2 may be in direct contact with the second emission layer 222, and the end of the third portion 135 facing the opposite side may be covered by the embankment layer 120. In other words, the third portion 135 of the hydrogen supply layer 130' may be arranged between the second pixel electrode 212 and the embankment layer 120, and may be in contact with only a portion of the bottom surface of the embankment layer 120. As an example, a portion of the bottom surface of the bank layer 120 disposed between the second light emitting diode LED2 and the third light emitting diode LED3 may be in contact with the upper surface of the third portion 135 of the hydrogen supply layer 130', and the remaining portion of the bottom surface of the bank layer 120 disposed between the second light emitting diode LED2 and the third light emitting diode LED3 may be in contact with the upper surface of the planarization layer 119. The third portion 135 of the hydrogen supply layer 130' may overlap with a region corresponding to approximately half of the horizontal width of the bank layer 120 disposed between the second light emitting diode LED2 and the third light emitting diode LED3.

[0140] Since the second portion 134 of the hydrogen supply layer 130' may be arranged between the first light emitting diode LED1 and the second light emitting diode LED2, which may be quantum dot light emitting elements, the second portion 134 of the hydrogen supply layer 130' may be arranged adjacent to the first light emitting diode LED1, and thus, may extend to be adjacent to the second light emitting diode LED2. The second portion 134 of the hydrogen supply layer 130' may be continuously disposed on the first pixel electrode 211 and the second pixel electrode 212 to cover the ends of the first pixel electrode 211 and the second pixel electrode 212. Accordingly, the side surface of the second portion 134 of the hydrogen supply layer 130' facing the first light emitting diode LED1 may contact (e.g., directly contact) the first emission layer 221, and the side surface of the second portion 134 of the hydrogen supply layer 130' facing the second light emitting diode LED2 may contact (e.g., directly contact) the second emission layer 222. The bank layer 120 disposed between the first light emitting diode LED1 and the second light emitting diode LED2 may be disposed on the second portion 134 of the hydrogen supply layer 130'. The entire bottom surface (which is also referred to as a “lower surface”) of the bank layer 120 disposed between the first light emitting diode LED1 and the second light emitting diode LED2 may be in contact with the upper surface of the second portion 134 of the hydrogen supply layer 130 ′.

[0141] like Figure 5 middle, Figure 6The hydrogen supply layer 130' may contain a high hydrogen concentration and may include silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y Because the side surface of the hydrogen supply layer 130' facing the first hydrogen supply layer opening 130OP1 may contact the first emission layer 221, and the side surface of the hydrogen supply layer 130' facing the second hydrogen supply layer opening 130OP2 may contact the second emission layer 222, Figure 6 The hydrogen supply layer 130' may be configured to supply hydrogen to the first emission layer 221 and the second emission layer 222. Since the ZnMgO contained in the first emission layer 221 and the second emission layer 222 reacts with hydrogen and can reduce defects, even in accordance with Figure 6 In the display device 1' of the embodiment of the present invention, the emission efficiency of the quantum dot light emitting element can be improved and the service life can be increased. Figure 6 In the display device 1 ′ shown in FIG. 8 , the hydrogen supply layer 130 ′ may also be deposited (eg, directly deposited) on the substrate 100 , so even in the display device 1 ′ according to the embodiment, mass production may be ensured.

[0142] The thickness of the hydrogen supply layer 130' may be about to about Specifically, the hydrogen supply layer 130' must have at least about The thickness of the hydrogen supply layer 130' may be less than about 1000 Å to smoothly supply hydrogen to the emission layer 220. However, in the case where the thickness of the hydrogen supply layer 130' becomes too thick, the thickness of the display device 1' also becomes thick, and therefore, the thickness of the hydrogen supply layer 130' may be less than about 1000 Å.

[0143] Despite Figure 6 Not shown, but in order to protect the light emitting diode LED, Figure 6 In the embodiment, a thin film encapsulation layer TFE (see FIG. 1 ) covering the first to third light emitting diodes LED1, LED2 and LED3 may be provided. Figure 3A ). Thin film encapsulation layer TFE (see Figure 3A ) may include at least one inorganic encapsulation layer and at least one organic encapsulation layer, each of which covers the light emitting diode LED. In an embodiment, a package substrate 400 (see Figure 3B ). The packaging substrate 400 (see Figure 3B ) can be passed through the sealing member 300 (see Figure 3B) is connected to the substrate 100 to encapsulate the light emitting diode LED.

[0144] Figure 7 is a schematic cross-sectional view of a display device 1 "according to an embodiment. Figure 7 , other characteristics except the characteristics of the encapsulation substrate 400 and the hydrogen supply layer 130 ″ may be the same as those of the reference Figure 4 and Figure 5 The same characteristics as those described in Figure 7 The same reference numerals as previously referenced in the elements Figure 4 and Figure 5 The reference numerals are replaced with those described, and the differences may be described below.

[0145] refer to Figure 7 , the first light emitting diode LED1 and the second light emitting diode LED2 may be quantum dot light emitting elements, and the third light emitting diode LED3 may be an organic light emitting element. The first emission layer 221 and the second emission layer 222 may include emission materials containing quantum dots, and the third emission layer 223 may include emission materials containing only organic materials. Accordingly, Figure 7 The display device 1" can not only have excellent emission characteristics by improving color purity and color reproducibility, but also can simultaneously achieve a long service life effect.

[0146] However, as described above, because the first emission layer 221 and the second emission layer 222 of the quantum dot light-emitting element contain ZnMgO, defects may occur. In the case where the hydrogen supply layer 130" can be arranged adjacent to the quantum dot light-emitting element, hydrogen can be supplied to the first emission layer 221 and the second emission layer 222, and the ZnMgO in the first emission layer 221 and the second emission layer 222 can react with the hydrogen and the defects can be reduced.

[0147] exist Figure 7 In the display device 1", the hydrogen supply layer 130" may be disposed on the encapsulation substrate 400. Here, the phrase "disposed on the encapsulation substrate 400" may mean that the hydrogen supply layer 130" may be formed (for example, directly formed) on a layer disposed on the encapsulation substrate 400 to implement the encapsulation substrate 400. In other words, the hydrogen supply layer 130" may be limited on the surface (bottom surface) of the encapsulation substrate 400 in a direction facing the substrate 100. The encapsulation substrate 400 may include glass or a light-transmitting organic material. As an example, the encapsulation substrate 400 may include a light-transmitting organic material such as an acrylic resin.

[0148] Accordingly, the first hydrogen supply layer 136 may be disposed on the bottom surface of the encapsulation substrate 400 and may overlap with the first light emitting diode LED1, and the second hydrogen supply layer 137 may be disposed on the bottom surface of the encapsulation substrate 400 and may overlap with the second light emitting diode LED2. Accordingly, the first hydrogen supply layer 136 may be disposed on a portion of the counter electrode 230 corresponding to the first light emitting diode LED1, and the second hydrogen supply layer 137 may be disposed on a portion of the counter electrode 230 corresponding to the second light emitting diode LED2. In an embodiment, each of the first hydrogen supply layer 136 and the second hydrogen supply layer 137 may be in contact with the upper surface of the counter electrode 230. However, the present embodiment may not be limited thereto, and the hydrogen supply layer 130″ may be arranged to be spaced apart from the counter electrode 230.

[0149] and Figure 5 similar, Figure 7 The hydrogen supply layer 130" may contain a high hydrogen concentration and may include silicon nitride (SiN x ), silicon oxide (SiO x ) and silicon oxynitride (SiO x N y ). Accordingly, the first hydrogen supply layer 136 may be configured to supply hydrogen to the first emission layer 221 through the counter electrode 230 of the first light emitting diode LED1, and the second hydrogen supply layer 137 may be configured to supply hydrogen to the second emission layer 222 through the counter electrode 230 of the second light emitting diode LED2. Since ZnMgO contained in the first emission layer 221 and the second emission layer 222 reacts with hydrogen and can reduce defects, even in accordance with Figure 7 In the display device 1" of the embodiment, the emission efficiency of the quantum dot light-emitting element can also be improved and the service life can be increased.

[0150] Since the hydrogen supply layer 130″ includes hydrogenated silicon nitride (SiN x ), the hydrogen supply layer 130" may be deposited on the package substrate 400 by chemical vapor deposition (CVD) instead of inkjet printing, spin coating, and slit coating. Figure 7 In the display device 1 ″ using the hydrogen supply layer 130 ″ shown in , the generation of smoke can be prevented, and the hydrogen supply layer 130 ″ can be uniformly patterned, and thus, mass production can be improved, compared with the case of using the above-mentioned PAA solution.

[0151] The thickness of the hydrogen supply layer 130" may be about to about Specifically, the hydrogen supply layer 130" must have at least about The thickness of the hydrogen supply layer 130 ″ is preferably about 100 Å to smoothly supply hydrogen to the emission layer 220. However, in the case where the thickness of the hydrogen supply layer 130 ″ becomes too thick, the thickness of the display device 1 ″ also becomes thick, and therefore, the thickness of the hydrogen supply layer 130 ″ may be about 100 Å. or smaller.

[0152] The encapsulation substrate 400 may be bonded to the substrate 100 so that the first light emitting diode LED1 and the second light emitting diode LED2 respectively face the first hydrogen supply layer 136 and the second hydrogen supply layer 137. Accordingly, light emitted from the first light emitting diode LED1 may be emitted through the first hydrogen supply layer 136, and light emitted from the second light emitting diode LED2 may be emitted through the second hydrogen supply layer 137.

[0153] The substrate 100 may be coupled to the encapsulation substrate 400 through a sealing member (not shown). The sealing member may be disposed in the non-display area NDA (see Figure 1 ) and may be arranged to surround the display area DA (see Figure 1 ). As an example, when observed in a direction perpendicular to the upper surface of the display device 1″ (z-axis direction), the sealing member may have a closed loop shape surrounding the display area DA. The sealing member may include a sealant and glass material, etc. The sealing member may include a photocurable resin cured by ultraviolet radiation, etc. The sealing member and the encapsulation substrate 400 may completely block the light-emitting diode LED of the display device 1″ from the outside. A cavity C may be defined between the substrate 100 and the encapsulation substrate 400 by the sealing member. The cavity C may be an empty space in which no filler may be provided. In the case where there is a cavity C between the hydrogen supply layer 130″ and the counter electrode 230, the hydrogen supply layer 130″ may be configured to supply hydrogen to the first emission layer 221 and the second emission layer 222.

[0154] In the display device according to the embodiment that may include the hydrogen supply layer, the emission efficiency and the life span of the light emitting element may be improved. However, this effect may be an example, and the scope of the present disclosure may not be limited by this effect.

[0155] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. The description of features or aspects within each embodiment should generally be considered as other similar features or aspects that can be used in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and detail may be made therein without departing from the spirit and scope defined by the claims.

Claims

1. A display device, comprising: substrate; a first light emitting diode, a second light emitting diode, and a third light emitting diode disposed on the substrate and configured to emit light of different colors; A bank layer is disposed on the substrate; as well as a hydrogen supply layer arranged to overlap or be adjacent to each of the first light emitting diode and the second light emitting diode, Wherein, the first light emitting diode, the second light emitting diode and the third light emitting diode each include: A pixel electrode is disposed on the substrate, and the bank layer includes an opening exposing a central portion of the pixel electrode; an intermediate layer disposed on the pixel electrode and in the opening; and The counter electrode is disposed on the intermediate layer and on the bank layer.

2. The display device according to claim 1, wherein: The hydrogen supply layer does not overlap with the third light emitting diode, and The hydrogen supply layer is arranged not adjacent to the third light emitting diode.

3. The display device according to claim 1, wherein: The hydrogen supply layer comprises: Hydrogen; and At least one of silicon nitride, silicon oxide, and silicon oxynitride.

4. The display device according to claim 1, wherein: The first light emitting diode includes a first pixel electrode, the second light emitting diode includes a second pixel electrode, and the third light emitting diode includes a third pixel electrode, The bank layer includes a first opening exposing a central portion of the first pixel electrode, a second opening exposing a central portion of the second pixel electrode, and a third opening exposing a central portion of the third pixel electrode, and The first light emitting diode includes a first intermediate layer disposed in the first opening, the second light emitting diode includes a second intermediate layer disposed in the second opening, and the third light emitting diode includes a third intermediate layer disposed in the third opening.

5. The display device according to claim 4, wherein: The hydrogen supply layer is disposed under and overlaps each of the first pixel electrode and the second pixel electrode.

6. The display device according to claim 5, wherein: An upper surface of the hydrogen supply layer contacts a bottom surface of each of the first pixel electrode and the second pixel electrode.

7. The display device according to claim 5, wherein: The bank layer covers an end portion of each of the first pixel electrode, the second pixel electrode, and the hydrogen supply layer.

8. The display device according to claim 5, wherein: In a plan view, the hydrogen supply layer overlapping the first pixel electrode has the same area as the first pixel electrode, and the hydrogen supply layer overlapping the second pixel electrode has the same area as the second pixel electrode.

9. The display device according to claim 5, wherein: The thickness of each of the first pixel electrode and the second pixel electrode is to within the range.

10. The display device according to claim 4, wherein: The hydrogen supply layer is disposed on an upper portion of the first pixel electrode and an upper portion of the second pixel electrode, and The hydrogen supply layer includes a first hydrogen supply layer opening exposing the central portion of the first pixel electrode and a second hydrogen supply layer opening exposing the central portion of the second pixel electrode.

11. The display device according to claim 10, wherein: The hydrogen supply layer covers end portions of the first pixel electrode and the second pixel electrode.

12. The display device according to claim 10, wherein: A side surface of the hydrogen supply layer facing the first light emitting diode is in direct contact with the first intermediate layer, and A side surface of the hydrogen supply layer facing the second light emitting diode is in direct contact with the second intermediate layer.

13. The display device according to claim 10, wherein: The first hydrogen supply layer opening overlaps the first opening, and The second hydrogen supply layer opening overlaps with the second opening.

14. The display device according to claim 10, wherein: The bank layer is provided on the hydrogen supply layer.

15. The display device according to claim 14, wherein: An entire lower surface of the bank layer disposed between the first light emitting diode and the second light emitting diode is in contact with an upper surface of the hydrogen supply layer.

16. The display device according to claim 14, further comprising: a planarization layer disposed under each of the first pixel electrode, the second pixel electrode, and the third pixel electrode, wherein a portion of the lower surface of the embankment layer arranged between the first light-emitting diode and the third light-emitting diode contacts the upper surface of the hydrogen supply layer, and a remaining portion of the lower surface of the embankment layer arranged between the first light-emitting diode and the third light-emitting diode contacts the upper surface of the planarization layer.

17. The display device according to claim 16, wherein: A portion of a lower surface of the bank layer disposed between the second light emitting diode and the third light emitting diode is in contact with the upper surface of the hydrogen supply layer, and A remaining portion of the lower surface of the bank layer disposed between the second light emitting diode and the third light emitting diode contacts the upper surface of the planarization layer.

18. The display device according to claim 4, further comprising: a packaging substrate, disposed on each of the first light emitting diode, the second light emitting diode, and the third light emitting diode; as well as a sealing member coupling the substrate to the packaging substrate, The hydrogen supply layer is in contact with a surface of the packaging substrate facing the substrate.

19. The display device according to claim 18, wherein: The hydrogen supply layer is arranged to overlap each of the first intermediate layer and the second intermediate layer.

20. The display device according to claim 18, wherein: The hydrogen supply layer is in contact with an upper surface of the counter electrode.

21. The display device according to claim 4, wherein: Each of the first intermediate layer and the second intermediate layer includes an emission layer including a plurality of quantum dots, and The third intermediate layer includes an emission layer composed of an organic material.

22. The display device according to any one of claims 1 to 21, wherein: The thickness of the hydrogen supply layer is to within the range.

23. The display device according to any one of claims 1 to 21, wherein: The first light emitting diode is configured to emit light in a wavelength band of 580 nm to 780 nm, The second light emitting diode is configured to emit light in a wavelength band of 495 nm to 580 nm, and The third light emitting diode is configured to emit light in a wavelength band of 380 nm to 495 nm.

24. A display device comprising: substrate; A quantum dot light-emitting element is disposed on the substrate; An organic light emitting element is disposed on the substrate; A bank layer is disposed on the substrate; as well as a hydrogen supply layer arranged to overlap or be adjacent to the quantum dot light emitting element, wherein the quantum dot light emitting element and the organic light emitting element each include: A pixel electrode is disposed on the substrate, and the bank layer includes an opening exposing a central portion of the pixel electrode; an intermediate layer disposed on the pixel electrode and in the opening; and A counter electrode covers the intermediate layer and is on the bank layer.

25. The display device according to claim 24, wherein: The intermediate layer of the quantum dot light emitting element includes an emission layer including a plurality of quantum dots, and The intermediate layer of the organic light emitting element includes an emission layer composed of an organic material.

26. The display device according to claim 24, wherein: The hydrogen supply layer does not overlap with the organic light emitting element, and is arranged not to be adjacent to the organic light emitting element.

27. The display device according to claim 24, wherein: The hydrogen supply layer overlaps with the pixel electrode of the quantum dot light emitting element and is disposed below the pixel electrode of the quantum dot light emitting element.

28. The display device according to claim 24, wherein: The hydrogen supply layer is disposed on the pixel electrode of the quantum dot light emitting element and includes a hydrogen supply layer opening exposing the central portion of the pixel electrode.

29. The display device according to claim 24, further comprising: A packaging substrate, disposed on each of the quantum dot light-emitting element and the organic light-emitting element; as well as a sealing member coupling the substrate to the packaging substrate, The hydrogen supply layer is in direct contact with a surface of the packaging substrate facing the substrate.

30. The display device according to claim 29, wherein: The hydrogen supply layer is arranged to overlap with the intermediate layer of the quantum dot light emitting element.

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