Method of manufacturing light emitting device, light emitting device manufactured thereby, and electronic apparatus

Abstract

Provided are a method of manufacturing a light-emitting device, a light-emitting device manufactured by the method, and an electronic apparatus, in which two selected from a first solution composition, a second solution composition, and a third solution composition each independently include a quantum dot, the remaining one solution composition including a host compound and a dopant compound, and all of the first solution composition, the second solution composition, and the third solution composition include the same solvent.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0110139 filed in the Korean Intellectual Property Office on August 22, 2023, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] One or more embodiments of the present disclosure are directed to a method of manufacturing a light emitting device and the light emitting device. Background Art

[0003] A light emitting device is a device that converts electrical energy into light energy. Examples of such light emitting devices include organic light emitting devices in which the light emitting material is an organic material and quantum dot light emitting devices in which the light emitting material is a quantum dot.

[0004] The light-emitting device may have a structure in which the first electrode (or the second electrode) is on a substrate, and a hole transport region, an emission layer, an electron transport region, and a second electrode (or the first electrode) are sequentially on the first electrode (or the second electrode). Holes provided from the first electrode (or the second electrode) may move toward the emission layer through the hole transport region, and electrons provided from the second electrode (or the first electrode) may move toward the emission layer through the electron transport region. Carriers such as holes and electrons are recombined in the emission layer to generate light. Summary of the invention

[0005] One or more embodiments of the present disclosure include a light emitting device having an improved lifetime and a method of manufacturing the light emitting device.

[0006] Additional aspects of the embodiments will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the disclosed presented embodiments.

[0007] According to one or more embodiments, a method of manufacturing a light emitting device includes:

[0008] forming a first emission layer by using a first solution composition through a solution process;

[0009] forming a second emission layer by using a second solution composition through a solution process; and

[0010] forming a third emission layer by using a third solution composition through a solution process,

[0011] Wherein, two selected from the first solution composition, the second solution composition and the third solution composition independently include quantum dots,

[0012] The remaining solution composition includes a host compound and a dopant compound, and

[0013] The first solution composition, the second solution composition, and the third solution composition all include the same solvent.

[0014] According to one or more embodiments, a light emitting device includes:

[0015] A first intermediate layer includes a first pixel electrode, a counter electrode facing the first pixel electrode, and a first emission layer between the first pixel electrode and the counter electrode;

[0016] a second intermediate layer including a second pixel electrode, a counter electrode facing the second pixel electrode, and a second emission layer between the second pixel electrode and the counter electrode; and

[0017] a third intermediate layer including a third pixel electrode, a counter electrode facing the third pixel electrode, and a third emission layer between the third pixel electrode and the counter electrode,

[0018] The first emission layer, the second emission layer and the third emission layer are formed by a method for manufacturing a light emitting device.

[0019] According to one or more embodiments,

[0020] The electronic device includes a light emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above and other aspects and features of certain disclosed embodiments will become more apparent from the following description taken in conjunction with the accompanying drawings.

[0022] Figure 1 is a schematic cross-sectional view of a light emitting device according to an embodiment. DETAILED DESCRIPTION

[0023] Now will refer to embodiment in more detail, its example is shown in the accompanying drawings, in which the same reference numerals always refer to the same elements. In this regard, the embodiments provided may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain the aspects of the embodiments of this description. As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items. Throughout the disclosure, the expression "at least one (kind / person) of a, b and c" means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b and c or their variations.

[0024] According to one or more embodiments, a method of manufacturing a light emitting device includes:

[0025] forming a first emission layer by using a first solution composition through a solution process;

[0026] forming a second emission layer by using a second solution composition through a solution process; and

[0027] forming a third emission layer by using a third solution composition through a solution process,

[0028] Wherein, two selected from the first solution composition, the second solution composition and the third solution composition may each independently include quantum dots,

[0029] The remaining solution composition may include a host compound and a dopant compound, and

[0030] The first solution composition, the second solution composition, and the third solution composition may include the same solvent.

[0031] In the Hansen solubility parameters, the dD value represents the dispersive component, the dP value represents the polar component, and the dH value represents the hydrogen bonding component.

[0032] In an embodiment, the solvent may have a Hansen solubility parameter dD value of 15 or greater. For example, the solvent may have a Hansen solubility parameter dD value of about 15 to about 20.

[0033] In an embodiment, the solvent may have a Hansen solubility parameter dP value of 6.0 or less. For example, the solvent may have a Hansen solubility parameter dP value of about 0.0 to about 2.0.

[0034] In an embodiment, the solvent may have a Hansen solubility parameter dH value of 3.0 or less. For example, the solvent may have a Hansen solubility parameter dH value of about 0.1 to about 3.0.

[0035] In the method for manufacturing a light emitting device, according to one or more embodiments, the first emission layer, the second emission layer and the third emission layer can be formed by the first solution composition, the second solution composition and the third solution composition, respectively, and the first solution composition, the second solution composition and the third solution composition use the same solvent. Therefore, the manufacturing process according to the embodiment of the present disclosure is simple.

[0036] In this regard, when Hansen solubility parameters dD, dP, and dH of the solvent are within the above ranges, the Hansen solubility parameters may be suitable for forming the first, second, and third emission layers by using the above composition through a solution process.

[0037] In an embodiment, the solvent may have a boiling point of about 200° C. to about 350° C. When the boiling point of the solvent is within the above range, the solvent may be suitable for forming the first, second, and third emission layers by using the above composition through a solution process.

[0038] In an embodiment, the solvent may include cyclohexylbenzene, octylbenzene, hexadecane, 2,7-diisopropylnaphthalene, or any combination thereof. For example, the solvent may be a single solvent, such as cyclohexylbenzene, octylbenzene, hexadecane, or 2,7-diisopropylnaphthalene.

[0039] In an embodiment, the solution process may be spin coating, casting, Langmuir-Blodgett (LB) method and / or inkjet printing. For example, the solution process may be inkjet printing.

[0040] In an embodiment, the first emission layer may be a red emission layer, the second emission layer may be a green emission layer, and the third emission layer may be a blue emission layer, and

[0041] The first solution composition and the second solution composition may each independently include quantum dots, and the third solution composition may include a single host compound or at least two host compounds.

[0042] In a method for manufacturing a light-emitting device, according to one or more embodiments, a first emission layer as a red emission layer and a second emission layer as a green emission layer can be formed, for example, by a first solution composition and a second solution composition, respectively, both of which include quantum dots.

[0043] When the blue emission layer includes quantum dots, the lifespan is short. In the method of manufacturing a light-emitting device, according to one or more embodiments, for example, a third emission layer as a blue emission layer may be formed of a third solution composition including a host compound and a dopant compound. When the third emission layer as a blue emission layer is formed of a composition including a host compound and a dopant compound, an excellent lifespan may be achieved compared to a comparative example in which the third emission layer as a blue emission layer is formed of a composition including quantum dots.

[0044] In a method for manufacturing a light-emitting device, according to one or more embodiments, the manufacturing process can be simplified by using a solvent that dissolves all of quantum dots, a host compound, and a dopant compound, and by using a composition including a host compound and a dopant compound instead of quantum dots to form a third emission layer as a blue emission layer, the overall life of the light-emitting device can be improved.

[0045] In some embodiments, each of the first solution composition and the second solution composition may have a concentration of, for example, about 0.1 wt% to about 20 wt%, and the third solution composition may have a concentration of, for example, about 0.1 wt% to about 20 wt%. For example, the concentration of each of the first solution composition and the second solution composition may be in the range of about 1.0 wt% to about 10 wt%, and the concentration of the third solution composition may be in the range of about 1.0 wt% to about 10 wt%. When the concentration of each solution composition is within the above range, the solution process may be smoothly performed.

[0046] Quantum dots, host compounds, and dopant compounds are further described below.

[0047] The first pixel electrode 122 - 1 , the second pixel electrode 122 - 2 , and the third pixel electrode 122 - 3

[0048] In the drawings, the substrate 110 may be below the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3 and / or the substrate 130 may be on the counter electrode 124. As the substrate, a glass substrate or a plastic substrate may be used. In some embodiments, the substrate may be a flexible substrate and may include, for example, one or more plastics having excellent heat resistance and durability, such as polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.

[0049] For example, the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3 may be formed by, for example, depositing and / or sputtering a material for forming the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3 on a substrate. When the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3 are anodes, a high work function material may be used as a material for the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3.

[0050] The first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3 may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. When the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3 are transmissive electrodes, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2), zinc oxide (ZnO), or any combination thereof may be used as a material for the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3. In one or more embodiments, when the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3 are semi-transmissive electrodes or reflective electrodes, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof may be used as a material for the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3.

[0051] The first pixel electrode 122-1, the second pixel electrode 122-2 and the third pixel electrode 122-3 may have a single layer structure consisting of a single layer or a multilayer structure including a plurality of layers. For example, the first pixel electrode 122-1, the second pixel electrode 122-2 and the third pixel electrode 122-3 may have a triple layer structure of ITO / Ag / ITO.

[0052] 121: A pixel circuit (thin film transistor, capacitor) connected to the first pixel electrode 122-1, the second pixel electrode 122-2, and the third pixel electrode 122-3.

[0053] Hole transport region

[0054] Referring to the accompanying drawings, the light emitting device 120 according to one or more embodiments may include: a first pixel electrode 122-1, an opposing electrode 124 facing the first pixel electrode 122-1, and a first intermediate layer 123-1 between the first pixel electrode 122-1 and the opposing electrode 124 and including a first emission layer; a second pixel electrode 122-2, an opposing electrode 124 facing the second pixel electrode 122-2, and a second intermediate layer 123-2 between the second pixel electrode 122-2 and the opposing electrode 124 and including a second emission layer; and a third pixel electrode 122-3, an opposing electrode 124 facing the third pixel electrode 122-3, and a third intermediate layer 123-3 between the third pixel electrode 122-3 and the opposing electrode 124 and including a third emission layer.

[0055] For example, the first intermediate layer 123-1, the second intermediate layer 123-2 and the third intermediate layer 123-3 may respectively include hole transport regions between the first pixel electrode 122-1 and the first emission layer, between the second pixel electrode 122-2 and the second emission layer, and between the third pixel electrode 122-3 and the third emission layer, and the hole transport regions each include a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer or any combination thereof.

[0056] The hole transport region may include a hole transport material. For example, the hole transport material may include a compound represented by Formula 201, a compound represented by Formula 202, or any combination thereof:

[0057] Formula 201

[0058]

[0059] Formula 202

[0060]

[0061] Among them, in equation 201 and equation 202,

[0062] L 201 To L 204 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0063] L 205 Can be *-O-*', *-S-*', *-N(Q 201 )-*', unsubstituted or substituted with at least one R 10a C 1 -C 20 Alkylene, unsubstituted or substituted with at least one R 10a C 2 -C 20 Alkenylene, unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0064] xa1 to xa4 may each independently be an integer from 0 to 5,

[0065] xa5 can be an integer from 1 to 10,

[0066] R 201 To R 204 and Q 201 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1-C 60 Heterocyclic group,

[0067] R 201 and R 202 may be optionally substituted via a single bond, unsubstituted or substituted with at least one R 10a C 1 -C 5 The alkylene group is either unsubstituted or substituted with at least one R 10a C 2 -C 5 The alkenylene groups are connected to each other to form an unsubstituted or substituted group having at least one R 10a C 8 -C 60 Polycyclic groups (e.g., carbazole groups, etc.) (e.g., the following compound HT16, etc.),

[0068] R 203 and R 204 may be optionally substituted via a single bond, unsubstituted or substituted with at least one R 10a C 1 -C 5 The alkylene group is either unsubstituted or substituted with at least one R 10a C 2 -C 5 The alkenylene groups are connected to each other to form an unsubstituted or substituted group having at least one R 10a C 8 -C 60 Polycyclic groups, and

[0069] na1 can be an integer from 1 to 4.

[0070] For example, each of Formula 201 and Formula 202 may include at least one selected from the groups represented by Formula CY201 to Formula CY217:

[0071]

[0072] In formula CY201 to formula CY217, R 10b and R 10c can be combined with this about R 10a Same as described, CY 201 To Ring CY 204 can all be independently C 3 -C 20 Carbocyclic or C 1 -C 20 heterocyclic group, and at least one hydrogen in Formula CY201 to Formula CY217 may be unsubstituted or replaced by R as described herein 10a replace.

[0073] In an embodiment, ring CY in formula CY201 to formula CY217 201 To Ring CY 204 Each of them may independently be a benzene group, a naphthyl group, a phenanthrene group or an anthracene group.

[0074] In one or more embodiments, each of Formula 201 and Formula 202 may include at least one selected from the groups represented by Formula CY201 to Formula CY203.

[0075] In one or more embodiments, Formula 201 may include at least one selected from the groups represented by Formula CY201 to Formula CY203 and at least one selected from the groups represented by Formula CY204 to Formula CY217.

[0076] In one or more embodiments, in Formula 201, xa1 may be 1, R 201 may be a group selected from the groups represented by Formula CY201 to Formula CY203, xa2 may be 0, and R 202 It may be a group selected from the groups represented by Formula CY204 to Formula CY207.

[0077] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formula CY201 to Formula CY203.

[0078] In one or more embodiments, each of Formula 201 and Formula 202 may not include the group represented by Formula CY201 to Formula CY203, and may include at least one selected from the groups represented by Formula CY204 to Formula CY217.

[0079] In one or more embodiments, each of Formula 201 and Formula 202 may not include the groups represented by Formula CY201 to Formula CY217.

[0080] For example, the hole transport material may include one selected from the following compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB (NPD), β-NPB, TPD, spiro-TPD, spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4',4"-tri(N-carbazolyl)triphenylamine (TCTA), polyaniline / dodecylbenzenesulfonic acid (PANI / DBSA), poly(3,4-ethylenedioxythiophene) / poly(4-styrenesulfonate) (PEDOT / PSS), polyaniline / camphorsulfonic acid (PANI / CSA) and polyaniline / poly(4-styrenesulfonate) (PANI / PSS) or any combination thereof:

[0081]

[0082]

[0083]

[0084]

[0085]

[0086] The hole transport region may have a to about (For example, about to about ) thickness. When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the hole injection layer may have a thickness of about to about (For example, about to about ), and the hole transport layer may have a thickness of about to about (For example, about to about When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer are within these ranges, suitable or satisfactory hole transport characteristics may be obtained without significantly increasing the driving voltage.

[0087] The emission auxiliary layer is used to increase the luminous efficiency by compensating the optical resonance distance according to the wavelength of the light emitted from the emission layer, and the electron blocking layer is used to block or reduce the leakage of electrons from the emission layer to the hole transport region. The materials that can be included in the hole transport region can be included in the emission auxiliary layer and the electron blocking layer.

[0088] p-dopant

[0089] In addition to the materials described above, the hole transport region may also include a charge generating material for conductivity improvement (eg, electrical conductivity improvement). The charge generating material may be dispersed uniformly or non-uniformly in the hole transport region (eg, in the form of a single layer consisting of the charge generating material).

[0090] The charge generating material may be, for example, a p-dopant.

[0091] For example, the p-dopant may have a lowest unoccupied molecular orbital (LUMO) energy level of -3.5 eV or less.

[0092] In an embodiment, the p-dopant may include a quinone derivative, a cyano-containing compound, a compound including the element EL1 and the element EL2, or any combination thereof.

[0093] Examples of quinone derivatives may include TCNQ, F 4 -TCNQ, etc.

[0094] Examples of the cyano group-containing compound may include HAT-CN, a compound represented by Formula 221, and the like:

[0095]

[0096] Formula 221

[0097]

[0098] Among them, in formula 221,

[0099] R 221 To R 223 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 a heterocyclic group, and

[0100] Selected from R 221 To R 223 At least one of them may be independently C substituted with the following groups 3 -C 60 Carbocyclic or C 1 -C 60 Heterocyclic group: cyano; -F; -Cl; -Br; -I; C substituted with cyano, -F, -Cl, -Br, -I or any combination thereof 1 -C 20 or any combination thereof.

[0101] In the compound including the element EL1 and the element EL2, the element EL1 may be a metal, a metalloid, or any combination thereof, and the element EL2 may be a nonmetal, a metalloid, or any combination thereof.

[0102] Examples of metals may include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), or cesium (Cs)); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), or barium (Ba)); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag) or gold (Au)); late transition metals (e.g., zinc (Zn), indium (In) or tin (Sn)); lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb) or lutetium (Lu)), etc.

[0103] Examples of metalloids may include silicon (Si), antimony (Sb), tellurium (Te), and the like.

[0104] Examples of non-metals may include oxygen (O), halogens (eg, F, Cl, Br, and / or I), and the like.

[0105] Examples of compounds including element EL1 and element EL2 may include metal oxides, metal halides (e.g., metal fluorides, metal chlorides, metal bromides and / or metal iodides), metalloid halides (e.g., metalloid fluorides, metalloid chlorides, metalloid bromides and / or metalloid iodides), metal tellurides, or any combination thereof.

[0106] Examples of metal oxides may include tungsten oxide (eg, WO, W 2 O 3 , WO 2 , WO 3 and / or W 2 O 5 ), vanadium oxides (e.g., VO, V 2 O 3 , VO 2 and / or V 2 O 5 ), molybdenum oxides (e.g., MoO, Mo 2 O 3 、MoO 2 、MoO 3 and / or Mo 2 O 5 ), rhenium oxide (e.g., ReO 3 )wait.

[0107] Examples of the metal halide may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, and the like.

[0108] Examples of alkali metal halides are LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.

[0109] Examples of alkaline earth metal halides may include BeF 2 MgF 2 , CaF 2 , SrF 2 , BaF 2 、BeCl 2 MgCl 2 , CaCl 2 、SrCl 2 、BaCl 2 ,BeBr 2 MgBr 2 , CaBr 2 , SrBr 2 ,BaBr 2 ,BeI 2 MgI 2 ,CaI 2 , SrI 2 ,BaI 2 wait.

[0110] Examples of transition metal halides may include titanium halides (eg, TiF 4 、TiCl 4 、TiBr 4 and / or TiI 4 etc.), zirconium halides (e.g., ZrF 4 、ZrCl 4 , ZrBr 4 and / or ZrI 4 etc.), hafnium halides (e.g., HfF 4 , HfCl 4 , HfBr 4 and / or HfI 4 etc.), vanadium halides (e.g., VF 3 、VCl 3 , VBr 3 and / or VI 3 etc.), niobium halides (e.g., NbF 3 、NbCl 3 , NbBr 3and / or NbI 3 etc.), tantalum halides (e.g., TaF 3 、TaCl 3 、TaBr 3 and / or TaI 3 etc.), chromium halides (e.g., CrF 3 CrCl 3 CrBr 3 and / or CrI 3 etc.), molybdenum halides (e.g., MoF 3 、MoCl 3 、MoBr 3 and / or MoI 3 etc.), tungsten halides (e.g., WF 3 、WCl 3 , WBr 3 and / or WI 3 etc.), manganese halides (e.g., MnF 2 、MnCl 2 、MnBr 2 and / or MnI 2 etc.), technetium halides (e.g., TcF 2 , TcCl 2 , TcBr 2 and / or TcI 2 etc.), rhenium halides (e.g., ReF 2 、ReCl 2 、ReBr 2 and / or ReI 2 etc.), ferrous halides (e.g., FeF 2 、FeCl 2 , FeBr 2 and / or FeI 2 etc.), ruthenium halides (e.g., RuF 2 、RuCl 2 ,RuBr 2 and / or RuI 2 etc.), osmium halides (e.g., OsF 2 , OsCl 2 、OsBr 2 and / or OsI 2 etc.), cobalt halides (e.g., CoF 2 、CoCl 2 ,CoBr 2 and / or CoI 2 etc.), rhodium halides (e.g., RhF 2 , RhCl 2 , RhBr 2 and / or RhI 2 etc.), iridium halides (e.g., IrF2 、IrCl 2 ,IrBr 2 and / or IrI 2 etc.), nickel halides (e.g., NiF 2 、NiCl 2 、NiBr 2 and / or NiI 2 etc.), palladium halides (e.g., PdF 2 , PdCl 2 , PdBr 2 and / or PdI 2 etc.), platinum halides (e.g., PtF 2 , PtCl 2 , PtBr 2 and / or PtI 2 etc.), cuprous halides (e.g., CuF, CuCl, CuBr and / or CuI, etc.), silver halides (e.g., AgF, AgCl, AgBr and / or AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr and / or AuI, etc.), etc.

[0111] Examples of late transition metal halides may include zinc halides (e.g., ZnF 2 、ZnCl 2 、ZnBr 2 and / or ZnI 2 etc.), indium halides (e.g., InI 3 etc.), tin halides (e.g., SnI 2 etc.

[0112] Examples of lanthanide metal halides may include YbF, YbF 2 , YbF 3 、SmF 3 , YbCl, YbCl 2 YbCl 3 、SmCl 3 , YbBr, YbBr 2 , YbBr 3 、SmBr 3 、YbI、YbI 2 ,YbI 3 and SmI 3 .

[0113] Examples of metalloid halides may include antimony halides (eg, SbCl 5 etc.

[0114] Examples of metal tellurides may include alkali metal tellurides (eg, Li 2 Te、Na 2 Te, K2 Te、Rb 2 Te and / or Cs 2 Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe and / or BaTe, etc.), transition metal tellurides (e.g., TiTe 2 、ZrTe 2 、HfTe 2 、V 2 Te 3 , Nb 2 Te 3 、 2 Te 3 Cr 2 Te 3 、Mo 2 Te 3 , W 2 Te 3 , MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu 2 Te, CuTe, Ag 2 Te, AgTe and / or Au 2 Te, etc.), late transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe and / or LuTe, etc.), etc.

[0115] Emission layers in the first intermediate layer 123 - 1 and the second intermediate layer 123 - 2

[0116] The emissive layer may include quantum dots.

[0117] The term "quantum dot" as used herein refers to a crystal of a semiconductor compound and may include any suitable material capable of emitting light of various suitable emission wavelengths depending on the size of the crystal. By adjusting the atomic ratio in the quantum dot compound, the quantum dot may emit light of various suitable emission wavelengths.

[0118] The diameter of the quantum dots may be, for example, in the range of about 1 nm to about 10 nm.

[0119] Quantum dots may be synthesized by a wet chemical process, a metal organic chemical vapor deposition process, a molecular beam epitaxy process, and / or any suitable similar process.

[0120] The wet chemical process is a method in which quantum dot particle crystals are grown after the precursor material is mixed with an organic solvent. When the quantum dot particle crystals grow, the organic solvent naturally acts as a dispersant coordinated on the surface of the quantum dot particle crystals and controls the growth of the quantum dot particle crystals. Therefore, the wet chemical method can be easier to perform than vapor deposition processes such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), and the growth of quantum dot particle crystals can be controlled by an inexpensive process.

[0121] Quantum dots may include: Group II-VI semiconductor compounds; Group III-V semiconductor compounds; Group III-VI semiconductor compounds; Group I-III-VI semiconductor compounds; Group IV-VI semiconductor compounds; Group IV elements or compounds; or any combination thereof.

[0122] Examples of II-VI semiconductor compounds may include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe and / or MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZn Se, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe and / or MgZnS, etc.; quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and / or HgZnSTe, etc.; or any combination thereof.

[0123] Examples of III-V semiconductor compounds may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and / or InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, and / or InPSb, etc.; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and / or InAlPSb, etc.; or any combination thereof. In some embodiments, the III-V semiconductor compounds may also include Group II elements. Examples of the Group III-V semiconductor compound also including the Group II element may include InZnP, InGaZnP, InAlZnP, and the like.

[0124] Examples of III-VI semiconductor compounds may include binary compounds such as GaS, GaSe, Ga 2 Se 3 、GaTe、InS、InSe、In 2 S 3 、In 2 Se 3 and / or InTe, etc.; ternary compounds such as InGaS 3 and / or InGaSe 3 etc.; or any combination thereof.

[0125] Examples of Group I-III-VI semiconductor compounds may include: ternary compounds such as AgInS, AgInS 2 、CuInS、CuInS 2 、CuGaO 2 、AgGaO 2 and / or AgAlO 2 etc.; quaternary compounds such as AgInGaS and / or AgInGaS 2 etc.; or any combination thereof.

[0126] Examples of IV-VI semiconductor compounds may include: binary compounds such as SnS, SnSe, SnTe, PbS, PbSe and / or PbTe; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe and / or SnPbTe; quaternary compounds such as SnPbSSe, SnPbSeTe and / or SnPbSTe; or any combination thereof.

[0127] The Group IV elements or compounds may include: single element materials, such as Si and / or Ge, etc.; binary compounds, such as SiC and / or SiGe, etc.; or any combination thereof.

[0128] Each element included in the multi-element compound such as the binary compound, the ternary compound, and the quaternary compound may be present in the particle at a uniform concentration or a non-uniform concentration.

[0129] In some embodiments, the quantum dots may each have a single structure in which the concentration of each element in the quantum dots is uniform (e.g., substantially uniform), or may have a core-shell dual structure. For example, the material included in the core and the material included in the shell may be different from each other.

[0130] The shell of a quantum dot can be used as a protective layer to prevent or reduce the chemical denaturation of the core to maintain semiconductor properties, and / or as a charged layer to impart electrophoretic properties to the quantum dot. The shell can be a single layer or multiple layers. The interface between the core and the shell can have a concentration gradient in which the concentration of the element present in the shell decreases along a certain direction toward the core. Examples of the core of a quantum dot may include semiconductor compounds.

[0131] Examples of quantum dot shells may include metal, metalloid and / or non-metal oxides, semiconductor compounds, or combinations thereof. Examples of metal, metalloid and / or non-metal oxides may include binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 and / or NiO, etc.; ternary compounds such as MgAl 2 O 4 、CoFe2 O 4 、NiFe 2 O 4 and / or CoMn 2 O 4 etc.; or any combination thereof. As described above, examples of semiconductor compounds may include: II-VI semiconductor compounds; III-V semiconductor compounds; III-VI semiconductor compounds; I-III-VI semiconductor compounds; IV-VI semiconductor compounds; or any combination thereof. Examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0132] The quantum dots may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less (e.g., about 40 nm or less, e.g., about 30 nm or less). When the FWHM of the quantum dots is within this range, color purity and / or color reproducibility may be improved. In other embodiments, because the light emitted by the quantum dots is emitted in all (e.g., substantially all) directions, a wide viewing angle may be improved.

[0133] In other embodiments, the quantum dots may be in the form of, for example, spherical, pyramidal, multi-armed, or cubic nanoparticles, nanotubes, nanowires, nanofibers, and / or nanoplates.

[0134] By adjusting the size of the quantum dots, the energy band gap can be adjusted to obtain various suitable wavelengths of light in the quantum dot emission layer. Therefore, by using quantum dots of different sizes, a light-emitting device that emits light of various suitable wavelengths can be realized. In some embodiments, the size of the quantum dots can be selected so that the quantum dots can emit red light, green light and / or blue light. In other embodiments, the size of the quantum dots can be configured so that the quantum dots can emit white light through a combination of various suitable colors of light.

[0135] Emission layer in the third intermediate layer 123-3

[0136] The emission layer may include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or any combination thereof.

[0137] The amount of the dopant in the emission layer may be in the range of about 0.01 parts by weight to about 15 parts by weight relative to 100 parts by weight of the host.

[0138] In one or more embodiments, the emission layer may include a delayed fluorescent material. The delayed fluorescent material may be used as a host or a dopant in the emission layer.

[0139] The emission layer may have approximately to about (For example, about to about ) in thickness. When the thickness of the emission layer is within these ranges, excellent light emitting characteristics can be obtained without significantly increasing the driving voltage.

[0140] main body

[0141] The host may include a compound represented by Formula 301:

[0142] Formula 301

[0143] [Ar 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21 ,

[0144] Wherein, in Formula 301,

[0145] Ar 301 and L 301 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0146] xb11 can be 1, 2 or 3,

[0147] xb1 can be an integer from 0 to 5.

[0148] R 301 It can be hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R 10a C 1 -C 60 Alkyl, unsubstituted or substituted with at least one R 10a C 2 -C 60 Alkenyl, unsubstituted or substituted with at least one R 10a C 2 -C 60 Alkynyl, unsubstituted or substituted with at least one R 10a C 1 -C 60Alkoxy, unsubstituted or substituted with at least one R 10a C 3 -C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group, -Si(Q 301 )(Q 302 )(Q 303 )、-N(Q 301 )(Q 302 )、-B(Q 301 )(Q 302 )、-C(=O)(Q 301 )、-S(=O) 2 (Q 301 ) or -P(=O)(Q 301 )(Q 302 ),

[0149] xb21 can be an integer from 1 to 5, and

[0150] Q 301 To Q 303 You can also see here about Q 1 As described.

[0151] For example, when xb11 in Formula 301 is 2 or greater, two or more Ar 301 can be connected to each other via a single bond.

[0152] For example, in Formula 301, xb11 may be 3, and Ar 301 Two anthracene moieties may be included.

[0153] In other embodiments, the host may include a compound represented by Formula 301-1, a compound represented by Formula 301-2, or any combination thereof:

[0154] Formula 301-1

[0155]

[0156] Formula 301-2

[0157]

[0158] Among them, in Formula 301-1 and Formula 301-2,

[0159] Ring A 301 To Ring A 304 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0160] X 301 Can be O, S, N[(L 304 ) xb4 -R 304 ]、C(R 304 )(R 305 ) or Si(R 304 )(R 305 ),

[0161] xb22 and xb23 can each independently be 0, 1 or 2,

[0162] L 301 , xb1 and R 301 can be as described herein,

[0163] L 302 To L 304 can be independently as about L 301 Described,

[0164] xb2 to xb4 may each independently be as described with respect to xb1, and

[0165] R 302 To R 305 and R 311 To R 314 can be similar to R 301 Descriptive.

[0166] In other embodiments, the host can include an alkaline earth metal complex, a late transition metal complex, or any combination thereof. For example, the host can include a Be complex (e.g., compound H55), a Mg complex, a Zn complex, or any combination thereof.

[0167] In other embodiments, the host may include one selected from Compound H1 to Compound H130, 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalene-2-yl)anthracene (MADN), 9,10-di(2-naphthyl)-2-tert-butyl-anthracene (TBADN), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), 1,3-di(9-carbazolyl)benzene (mCP) and 1,3,5-tri(carbazolyl-9-yl)benzene (TCP), or any combination thereof:

[0168]

[0169]

[0170]

[0171]

[0172]

[0173]

[0174] In embodiments, the host may include a single host compound or at least two host compounds.

[0175] In an embodiment, a single host compound may have a molecular weight of 700 or more or at least two host compounds may have an average molecular weight of 700 or more.

[0176] For example, the molecular weight or average molecular weight of the host may be in the range of about 700 to about 1500. When the molecular weight or average molecular weight of the host is in the above range, the host is suitable for a solution process.

[0177] Dopant

[0178] In an embodiment, the dopant compound may be a compound represented by Formula 1:

[0179] Formula 1

[0180]

[0181] Among them, in formula 1, Y 1 To Y 3 can be independently O, S, N (R 24 )、B(R 24 )、C(R 24 )(R 25 ) or Si(R 24 )(R 25 ),

[0182] c can be 0 or 1,

[0183] A 11 To A 13 can be independently selected from C 5 -C 30 Carbocyclic groups and C 1 -C 30 Heterocyclic groups,

[0184] R 21 To R 25 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid or its salt, sulfonic acid or its salt, phosphate or its salt, unsubstituted or substituted with at least one R10a C 1 -C 60 Alkyl, unsubstituted or substituted with at least one R 10a C 2 -C 60 Alkenyl, unsubstituted or substituted with at least one R 10a C 2 -C 60 Alkynyl, unsubstituted or substituted with at least one R 10a C 1 -C 60 Alkoxy, unsubstituted or substituted with at least one R 10a C 3 -C 10 Cycloalkyl, unsubstituted or substituted with at least one R 10a C 1 -C 10 Heterocycloalkyl, unsubstituted or substituted with at least one R 10a C 3 -C 10 Cycloalkenyl, unsubstituted or substituted with at least one R 10a C 1 -C 10 Heterocycloalkenyl, unsubstituted or substituted with at least one R 10a C 6 -C 60 Aryl, unsubstituted or substituted with at least one R 10a C 6 -C 60 Aryloxy, unsubstituted or substituted with at least one R 10a C 6 -C 60 Arylthio, unsubstituted or substituted with at least one R 10a C 1 -C 60 Heteroaryl, unsubstituted or substituted with at least one R 10a A monovalent non-aromatic condensed polycyclic group, unsubstituted or substituted with at least one R 10a Monovalent non-aromatic condensed heteropolycyclic group, -Si(Q 1 )(Q 2 )(Q 3 )、-N(Q 1 )(Q 2 )、-B(Q 1 )(Q 2 )、-P(Q 1 )(Q 2 )、-C(=O)(Q 1 )、-S(=O) 2 (Q 1 ) and -P(=O)(Q1 )(Q 2 ),

[0185] R 21 To R 25 may be optionally linked to each other to form groups which are all unsubstituted or substituted with at least one R 10a C 5 -C 30 Carbocyclic group or C 1 -C 30 Heterocyclic groups,

[0186] a21 to a23 may each independently be an integer from 0 to 10,

[0187] R 10a Can be: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro;

[0188] Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Aralkyl, C 2 -C 60 Heteroaralkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O) 2 (Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl or C 1 -C 60 Alkoxy;

[0189] Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl, C 1 -C 60 Alkoxy, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Aralkyl, C 2 -C 60 Heteroaralkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O) 2 (Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl or C 2 -C 60 heteroarylalkyl; or

[0190] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O) 2 (Q 31 ) or -P(=O)(Q 31 )(Q 32 ),and

[0191] Q 1 To Q 3 , Q 11 To Q 13 , Q 21 To Q 23 and Q 31 To Q 33 can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C 1 -C 60 Alkyl; C 2 -C 60 Alkenyl; C 2 -C 60 Alkynyl; C 1 -C 60 Alkoxy; or unsubstituted or substituted with deuterium, -F, cyano, C 1 -C 60 Alkyl, C 1 -C 60 C alkoxy, phenyl, biphenyl or any combination thereof 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 7 -C 60 Arylalkyl or C 2 -C 60 Heteroaralkyl.

[0192] In an embodiment, the compound represented by Formula 1 may include one selected from the following compounds:

[0193]

[0194] Electron transport region

[0195] In some embodiments, the first intermediate layer 123-1, the second intermediate layer 123-2 and the third intermediate layer 123-3 may respectively include electron transport regions between the counter electrode 124 and the first emission layer, between the counter electrode 124 and the second emission layer, and between the counter electrode 124 and the third emission layer, each electron transport region including a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0196] The electron transport region may have: i) a single-layer structure consisting of a single layer consisting of a single material; ii) a single-layer structure consisting of a single layer including a plurality of different materials; or iii) a multi-layer structure including a plurality of layers including a plurality of different materials.

[0197] The electron transport region may include a buffer layer, a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0198] The electron transport region (eg, a buffer layer, a hole blocking layer, or an electron transport layer in the electron transport region) may include a nitrogen-containing C 1 -C 60 The ring-based metal-free compounds.

[0199] For example, the electron transport region may include a compound represented by Formula 601:

[0200] Formula 601

[0201] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21 .

[0202] Wherein, in Formula 601,

[0203] Ar 601 and L 601 may be independently unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group,

[0204] xe11 can be 1, 2 or 3,

[0205] xe1 can be 0, 1, 2, 3, 4, or 5,

[0206] R 601 may be unsubstituted or substituted with at least one R 10a C 3 -C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 )、-C(=O)(Q 601 )、-S(=O) 2 (Q 601 ) or -P(=O)(Q 601 )(Q 602 ),

[0207] Q601 To Q 603 Can be as about Q 1 Described,

[0208] xe21 can be 1, 2, 3, 4, or 5, and

[0209] Selected from Ar 601 , L 601 and R 601 At least one of them may be independently unsubstituted or substituted with at least one R 10a The π-electron-poor nitrogen-containing C 1 -C 60 Cyclic group.

[0210] For example, when xe11 in Formula 601 is 2 or greater, two or more Ar 601 can be connected to each other via a single bond.

[0211] In other embodiments, Ar in Formula 601 601 The anthracene group may be substituted or unsubstituted.

[0212] In one or more embodiments, the electron transport region may include a compound represented by Formula 601-1:

[0213] Formula 601-1

[0214]

[0215] Among them, in formula 601-1,

[0216] X 614 Can be N or C (R 614 ), X 615 Can be N or C (R 615 ), X 616 Can be N or C (R 616 ), and is selected from X 614 To X 616 At least one of may be N,

[0217] L 611 To L 613 can be similar to L 601 Described,

[0218] xe611 to xe613 can all be as described for xe1,

[0219] R 611 To R 613 can be similar to R 601 described, and

[0220] R 614 To R616 can be independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 1 -C 20 Alkyl, C 1 -C 20 Alkoxy, unsubstituted or substituted with at least one R 10a C 3 -C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C 1 -C 60 Heterocyclic group.

[0221] For example, xe1 in Formula 601 and xe611 to xe613 in Formula 601-1 can all independently be 0, 1 or 2.

[0222] The electron transport region may include compounds selected from ET1 to ET45, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq 3 , BAlq, TAZ, NTAZ or any combination thereof:

[0223]

[0224]

[0225]

[0226] The electron transport region may have a to about (For example, about to about ) thickness. When the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the hole blocking layer or the electron transport layer may each independently have a thickness of about to about (For example, about to about ) thickness. The electron transport layer may have a thickness of about to about (For example, about to about When the thickness of the hole blocking layer and / or the electron transport layer is within these ranges, suitable or satisfactory electron transport characteristics can be obtained without significantly increasing the driving voltage.

[0227] In addition to the above-mentioned materials, the electron transport region (eg, the electron transport layer in the electron transport region) may further include a metal-containing material.

[0228] The metal-containing material can include alkali metal complex, alkaline earth metal complex or any combination thereof. The metal ion of the alkali metal complex can be Li ion, Na ion, K ion, Rb ion and / or Cs ion, and the metal ion of the alkaline earth metal complex can be Be ion, Mg ion, Ca ion, Sr ion and / or Ba ion. The ligand coordinated with each metal ion in the alkali metal complex and the alkaline earth metal complex can include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene or any combination thereof.

[0229] For example, the metal-containing material may include a Li complex. The Li complex may include, for example, compound ET-D1 (Liq) and / or compound ET-D2:

[0230]

[0231] The electron transport region may include an electron injection layer that facilitates injection of electrons. The electron injection layer may directly contact the cathode as a counter electrode.

[0232] The electron injection layer may have: i) a single-layer structure consisting of a single layer consisting of a single material; ii) a single-layer structure consisting of a single layer including a plurality of different materials; or iii) a multi-layer structure including a plurality of layers including a plurality of different materials.

[0233] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.

[0234] Alkali metals may include Li, Na, K, Rb, Cs, or any combination thereof. Alkaline earth metals may include Mg, Ca, Sr, Ba, or any combination thereof. Rare earth metals may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.

[0235] The alkali metal-containing compound, the alkaline earth metal-containing compound and the rare earth metal-containing compound may be oxides, halides (eg, fluorides, chlorides, bromides or iodides) and / or tellurides of each of the alkali metal, alkaline earth metal and rare earth metal, or any combination thereof.

[0236] The alkali metal-containing compound may include: alkali metal oxides (such as Li 2 O、Cs 2O and / or K 2 O, etc.), alkali metal halides (such as LiF, NaF, CsF, KF, LiI, NaI, CsI, and / or KI, etc.); or any combination thereof. The alkaline earth metal compound may include alkaline earth metal oxides (such as, BaO, SrO, CaO, Ba x Sr 1-x O (where x is a real number satisfying 0 < x < 1) and / or Ba x Ca 1-x O (where x is a real number satisfying 0 < x < 1), etc.). The rare earth metal compound may include YbF 3 , ScF 3 , Sc 2 O 3 , Y 2 O 3 , Ce 2 O 3 , GdF 3 , TbF 3 , YbI 3 , ScI 3 , TbI 3 or any combination thereof. In some embodiments, the rare earth metal compound may include lanthanide metal tellurides. Examples of lanthanide metal tellurides may include LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La 2 Te 3 , Ce 2 Te 3 , Pr 2 Te 3 , Nd 2 Te 3 , Pm 2 Te 3 , Sm 2 Te 3 , Eu 2 Te 3 , Gd 2 Te 3 , Tb 2 Te 3 , Dy 2 Te 3 , Ho 2 Te 3 , Er 2 Te 3 , Tm 2 Te 3 , Yb 2 Te 3 , Lu2 Te 3 wait.

[0237] The alkali metal complex, alkaline earth metal complex and rare earth metal complex may include: i) one selected from the ions of alkali metals, alkaline earth metals and rare earth metals as described above; and ii) a ligand bound to the metal ion, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene or any combination thereof.

[0238] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof as described above or may be composed of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof as described above. In some embodiments, the electron injection layer may also include an organic material (e.g., a compound represented by Formula 601).

[0239] In an embodiment, the electron injection layer may include: i) an alkali metal compound (e.g., an alkali metal halide); or ii) a) an alkali metal compound (e.g., an alkali metal halide) and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof or composed of i) an alkali metal compound (e.g., an alkali metal halide); or composed of ii) a) an alkali metal compound (e.g., an alkali metal halide) and b) an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposition layer, a RbI:Yb co-deposition layer, and / or a LiF:Yb co-deposition layer, etc.

[0240] When the electron injection layer also includes an organic material, an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex or any combination thereof can be uniformly or non-uniformly dispersed in a matrix including the organic material.

[0241] The thickness of the electron injection layer can be about to about For example, about to about When the thickness of the electron injection layer is within these ranges, suitable or satisfactory electron injection characteristics can be obtained without significantly increasing the driving voltage.

[0242] Counter electrode 124

[0243] The counter electrode 124 may be on the electron transport region as described above. The counter electrode 124 may be a cathode, and as a material for the counter electrode 124, metals, alloys, conductive compounds, or any combination thereof, each having a low work function, may be used.

[0244] The counter electrode 124 may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The counter electrode 124 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0245] The counter electrode 124 may have a single-layer structure consisting of a single layer or a multi-layer structure including a plurality of layers.

[0246] Covering layer

[0247] The first capping layer may be outside the first pixel electrode 122 - 1 , the second pixel electrode 122 - 2 , and the third pixel electrode 122 - 3 , and / or the second capping layer may be outside the counter electrode 124 as a cathode.

[0248] The first cover layer and / or the second cover layer may increase the reliability of the electronic device by preventing or reducing the penetration of impurities such as moisture and / or oxygen into the electronic device.

[0249] Each of the first cap layer and the second cap layer may include a material having a refractive index (at a wavelength of 589 nm) of 1.6 or more.

[0250] The first capping layer and the second capping layer may each independently be an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.

[0251] At least one selected from the first cover layer and the second cover layer may independently include a carbocyclic compound, a heterocyclic compound, an amine-containing compound, a porphyrin derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine-containing compound may be optionally substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In an embodiment, at least one selected from the first cover layer and the second cover layer may independently include an amine-containing compound.

[0252] For example, at least one selected from the first capping layer and the second capping layer may each independently include the compound represented by Formula 201, the compound represented by Formula 202, or any combination thereof.

[0253] In other embodiments, at least one selected from the first cap layer and the second cap layer may independently include: one selected from compounds HT28 to HT33; one selected from compounds CP1 to CP6; β-NPB; or any combination thereof:

[0254]

[0255] Manufacturing method

[0256] Various layers included in the hole transport region, the emission layer, the active layer (ACL) and / or various layers included in the electron transport region may be formed in a specific region by using various suitable methods such as vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) method, inkjet printing, laser printing and / or laser induced thermal imaging.

[0257] When the various layers included in the hole transport region, the emission layer, and the various layers included in the electron transport region are formed by vacuum deposition, the deposition temperature may be about 100° C. to about 500° C., about 10 -8 About 10 -3 Torr vacuum and approx. to about The vacuum deposition was performed at a deposition rate of .

[0258] When various layers included in the hole transport region, the emission layer, and various layers included in the electron transport region are formed by spin coating, considering the materials to be included in each layer to be formed and the structure of each layer to be formed, the spin coating can be performed at a coating speed of about 2000 rpm to about 5000 rpm and at a heat treatment temperature of about 80°C to about 200°C.

[0259] Definition of terms

[0260] As used herein, the term "C 3 -C 60 "Carbocyclyl" refers to a cyclic group consisting only of carbon as a ring atom and having 3 to 60 carbon atoms, and the term "C 1 -C 60 The term "heterocyclic group" refers to a ring group having 1 to 60 carbon atoms and having a hetero atom as a ring-forming atom in addition to carbon. 3 -C 60 Carbocyclic and C 1 -C60 The heterocyclic groups may be monocyclic groups consisting of one ring or polycyclic groups in which at least two rings are condensed with each other. 1 -C 60 The number of ring-forming atoms in the heterocyclic group may be in the range of 3 to 61.

[0261] As used herein, the term "cyclic group" may include C 3 -C 60 Carbocyclic and C 1 -C 60 Both heterocyclic groups.

[0262] As used herein, the term "π-electron-rich C 3 -C 60 The term "cyclic group" refers to a cyclic group having 3 to 60 carbon atoms and not including *-N=*' as a ring-forming part, and the term "π-electron-poor nitrogen-containing C 1 -C 60 The term "cyclic group" refers to a heterocyclic group having 1 to 60 carbon atoms and including *-N=*' as a ring-forming part.

[0263] For example,

[0264] C 3 -C 60 The carbocyclic group may be: i) a group T1; or ii) a condensed ring group in which two or more groups T1 are condensed with each other (for example, a cyclopentadiene group, an adamantane group, a norbornane group, a phenyl group, a pentalene group, a naphthalene group, an azulene group, an indacene group, an acenaphthene group, a phenanthrenyl group, an anthracene group, a fluoranthene group, a benzo[9,10]phenanthrene group, a pyrene group, a benzophenone group, a fluorene group, a spirobifluorene group, a benzofluorene group, an indenophenanthrene group or an indenoanthracene group),

[0265] C 1 -C 60The heterocyclic group may be: i) a group T2; ii) a condensed ring group in which two or more groups T2 are condensed with each other; or iii) a condensed ring group in which at least one group T2 and at least one group T1 are condensed with each other (for example, a pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzisoindole group, a naphthoisoindole group, a benzothiorrole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzothiorrole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolecarbazole group, a benzofuranocarbazole group, a benzothiophenocarbazole group, a benzothiorrolecarbazole group, a benzoindolecarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthosilole group, a benzofuranodibenzofuran ... benzothiophene group, benzothienodibenzothiophene group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzisoxazole group, benzothiazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, a benzoquinoline group, a benzoisoquinoline group, a quinoxaline group, a benzoquinoxaline group, a quinazoline group, a benzoquinazoline group, a phenanthroline group, a cinnoline group, a phthalazine group, a naphthyridine group, an imidazopyridine group, an imidazopyrimidine group, an imidazotriazine group, an imidazopyrazine group, an imidazopyridazine group, an azacarbazole group, an azafluorene group, an azadibenzosilole group, an azadibenzothiophene group or an azadibenzofuran group, etc.),

[0266] Pi-electron-rich C 3 -C 60 The cyclic group may be: i) a group T1; ii) a condensed cyclic group in which two or more groups T1 are condensed with each other; iii) a group T3; iv) a condensed cyclic group in which two or more groups T3 are condensed with each other; or v) a condensed cyclic group in which at least one group T3 and at least one group T1 are condensed with each other (e.g., C 3 -C 60a carbocyclic group, a 1H-pyrrole group, a thiol group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoisoindole group, a benzothiol group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzothiol group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolecarbazole group, a benzofuranocarbazole group, a benzothiophenocarbazole group, a benzothioylcarbazole group, a benzoindolecarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthothiol group, a benzofuranodibenzofuranodibenzothiophene group or a benzothiophenodibenzothiophene group, etc.),

[0267] π-electron-poor nitrogen-containing C 1 -C 60 The cyclic group may be: i) a group T4; ii) a condensed cyclic group in which two or more groups T4 are condensed with each other; iii) a condensed cyclic group in which at least one group T4 and at least one group T1 are condensed with each other; iv) a condensed cyclic group in which at least one group T4 and at least one group T3 are condensed with each other; or v) a condensed cyclic group in which at least one group T4, at least one group T1 and at least one group T3 are condensed with each other (for example, a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a azole group, benzoxazole group, benzisoxazole group, benzothiazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthroline group, cinnoline group, phthalazine group, naphthyridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzosilole group, azadibenzothiophene group or azadibenzofuran group, etc.),

[0268] The group T1 can be a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, a norbornane (or bicyclo[2.2.1]heptane) group, a norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group or a phenyl group,

[0269] The group T2 can be a furan group, a thiophene group, a 1H-pyrrole group, a thiol group, a borocyclopentadiene group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathiol group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a tetrazine group, a tetrahydropyrrole group, an imidazolidinyl group, a dihydropyrrole group, a piperidine group, a tetrahydropyridine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydropyrazine group, a dihydropyrazine group, a tetrahydropyridazine group or a dihydropyridazine group,

[0270] The group T3 may be a furan group, a thiophene group, a 1H-pyrrole group, a thiole group or a borole group, and

[0271] The group T4 can be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azathiazole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group or a tetrazine group.

[0272] As used herein, the term "cyclic group, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic, π-electron-rich C 3 -C 60 Ring-based or π-electron-poor nitrogen-containing C 1 -C 60 The term "cyclic group" refers to a group condensed with any suitable cyclic group, monovalent group or polyvalent group (e.g., divalent group, trivalent group or tetravalent group, etc.) according to the structure of the formula for which the corresponding term is used. For example, a "phenyl group" may be a benzo group, a phenyl group or a phenylene group, etc., which can be easily understood by a person of ordinary skill in the art based on the structure of the formula including the "phenyl group".

[0273] Unit Price C 3 -C 60 Carbocyclic groups and monovalent C 1 -C 60 Examples of heterocyclic groups may include C 3 -C 10 Cycloalkyl, C 1 -C 10 Heterocycloalkyl, C 3 -C 10 Cycloalkenyl, C 1 -C 10Heterocycloalkenyl, C 6 -C 60 Aryl, C 1 -C 60 Heteroaryl, monovalent non-aromatic condensed polycyclic group and monovalent non-aromatic condensed heteropolycyclic group. 3 -C 60 Carbocyclic groups and divalent C 1 -C 60 Examples of heterocyclic groups may include C 3 -C 10 Cycloalkylene, C 1 -C 10 Heterocycloalkylene, C 3 -C 10 Cycloalkenylene, C 1 -C 10 Heterocycloalkenylene, C 6 -C 60 Arylene, C 1 -C 60 heteroarylene groups, divalent non-aromatic condensed polycyclic groups and divalent non-aromatic condensed heteropolycyclic groups.

[0274] As used herein, the term "C 1 -C 60 The term “alkyl” refers to a linear or branched aliphatic saturated hydrocarbon monovalent group having 1 to 60 carbon atoms, and examples thereof include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, n-pentyl, tert-pentyl, neopentyl, isopentyl, sec-pentyl, 3-pentyl, sec-isopentyl, n-hexyl, isohexyl, sec-hexyl, tert-hexyl, n-heptyl, isoheptyl, sec-heptyl, tert-heptyl, n-octyl, isooctyl, sec-octyl, tert-octyl, n-nonyl, isononyl, sec-nonyl, tert-nonyl, n-decyl, isodecyl, sec-decyl, tert-decyl and the like. As used herein, the term “C 1 -C 60 "Alkylene" refers to C 1 -C 60 The alkyl group has a divalent group having substantially the same structure.

[0275] As used herein, the term "C 2 -C 60 "Alkenyl" refers to 2 -C 60 The alkyl group is a monovalent hydrocarbon group having at least one carbon-carbon double bond at the main chain (e.g., in the middle) or at the terminal (e.g., end), and examples thereof include ethenyl, propenyl, butenyl, etc. As used herein, the term “C 2 -C 60 "Alkenylene" refers to C 2 -C 60 An alkenyl group has a divalent group having substantially the same structure.

[0276] As used herein, the term "C 2 -C 60 "Alkynyl" refers to a C 2 -C 60 The alkyl group is a monovalent hydrocarbon group having at least one carbon-carbon triple bond at the main chain (e.g., in the middle) or at the terminal (e.g., end), and examples thereof include ethynyl, propynyl, and the like. As used herein, the term “C 2 -C 60 "Alkynylidene" refers to C 2 -C 60 Alkynyl groups have substantially the same structure as divalent groups.

[0277] As used herein, the term "C 1 -C 60 "Alkoxy" refers to -OA 101 (Among them, A 101 It is C 1 -C 60 An alkyl group is a monovalent group represented by an alkyl group, and examples thereof include a methoxy group, an ethoxy group, an isopropoxy group, and the like.

[0278] As used herein, the term "C 3 -C 10 The term "cycloalkyl" refers to a monovalent saturated hydrocarbon ring group having 3 to 10 carbon atoms, and examples thereof include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentanyl, bicyclo[2.1.1]hexanyl, bicyclo[2.2.2]octyl, and the like. As used herein, the term "Cycloalkyl" refers to a monovalent saturated hydrocarbon ring group having 3 to 10 carbon atoms, and examples thereof include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, adamantyl, norbornyl (or bicyclo[2.2.1]heptyl), bicyclo[1.1.1]pentanyl, bicyclo[2.1.1]hexanyl, bicyclo[2.2 3 -C 10 "Cycloalkylene" refers to 3 -C 10 The cycloalkyl group has a divalent group having substantially the same structure.

[0279] As used herein, the term "C 1 -C 10 "Heterocycloalkyl" refers to a monovalent ring group having 1 to 10 carbon atoms which includes at least one hetero atom as a ring-forming atom in addition to carbon atoms, and examples thereof include 1,2,3,4-oxatriazolidinyl, tetrahydrofuranyl, tetrahydrothienyl, and the like. As used herein, the term "C 1 -C 10 "Heterocycloalkylene" refers to a C 1 -C 10 The heterocycloalkyl group has a divalent group having substantially the same structure.

[0280] As used herein, the term "C 3 -C 10"Cycloalkenyl" refers to a monovalent cyclic group having 3 to 10 carbon atoms and at least one carbon-carbon double bond in its ring and is not aromatic, and examples thereof include cyclopentenyl, cyclohexenyl, cycloheptenyl, and the like. As used herein, the term "C 3 -C 10 "Cycloalkenylene" refers to 3 -C 10 The cycloalkenyl group is a divalent group having substantially the same structure.

[0281] As used herein, the term "C 1 -C 10 The term "heterocycloalkenyl group" refers to a monovalent cyclic group of 1 to 10 carbon atoms which includes at least one heteroatom as a ring-forming atom in addition to carbon atoms in its ring and has at least one double bond. 1 -C 10 Examples of heterocycloalkenyl groups include 4,5-dihydro-1,2,3,4-oxatriazolyl, 2,3-dihydrofuranyl, 2,3-dihydrothienyl, and the like. As used herein, the term “C 1 -C 10 "Heterocycloalkenylene" refers to a C 1 -C 10 The heterocycloalkenyl group has a divalent group having substantially the same structure.

[0282] As used herein, the term "C 6 -C 60 "Aryl" refers to a monovalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms, and the term "C 6 -C 60 "Arylene" refers to a divalent group of a carbocyclic aromatic system having 6 to 60 carbon atoms. 6 -C 60 Examples of aryl groups include phenyl, pentalenyl, naphthyl, azulenyl, indacenyl, acenaphthenyl, phenanthrenyl, anthracenyl, fluoranthenyl, benzo[9,10]phenanthrenyl, pyrenyl, phenyl, peryl, pentaphenyl, heptaphenyl, tetraphenyl, peryl, hexaphenyl, pentyl, rubidinyl, coryl, ovaphenyl, etc. 6 -C 60 Aryl and C 6 -C 60 When the arylene groups each include two or more rings, the two or more rings may be condensed with each other.

[0283] As used herein, the term "C 1 -C 60 "Heteroaryl" refers to a monovalent group having a heterocyclic aromatic system which includes at least one heteroatom as a ring atom in addition to carbon atoms and has 1 to 60 carbon atoms. As used herein, the term "C1 -C 60 The term "heteroarylene" refers to a divalent group having a heterocyclic aromatic system which includes at least one heteroatom as a ring-forming atom in addition to carbon atoms. 1 -C 60 Examples of heteroaryl groups include pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, quinolyl, benzoquinolyl, isoquinolyl, benzoisoquinolyl, quinoxalinyl, benzoquinoxalinyl, quinazolinyl, benzoquinazolinyl, cinnolinyl, phenanthrolinyl, phthalazinyl, naphthyridinyl, and the like. 1 -C 60 Heteroaryl and C 1 -C 60 When the heteroarylene group includes two or more rings, the two or more rings may be condensed with each other.

[0284] As used herein, the term "monovalent non-aromatic condensed polycyclic radical" refers to a monovalent group having two or more rings condensed to each other, only carbon atoms (e.g., having 8 to 60 carbon atoms) as ring atoms and no aromaticity (e.g., no aromaticity when considered as a whole) in its entire molecular structure. Examples of monovalent non-aromatic condensed polycyclic radicals include indenyl, fluorenyl, spirobifluorenyl, benzofluorenyl, indenophenanthryl, indenoanthryl, etc. As used herein, the term "divalent non-aromatic condensed polycyclic radical" refers to a divalent group having substantially the same structure as the monovalent non-aromatic condensed polycyclic radical described above.

[0285] The term "monovalent non-aromatic condensed heteropolycyclic group" as used herein refers to a monovalent group having two or more condensed rings and at least one heteroatom other than carbon atoms (e.g., having 1 to 60 carbon atoms) as a ring-forming atom, wherein the molecular structure has no aromaticity when considered as a whole. Examples of the monovalent non-aromatic condensed heteropolycyclic group include a pyrrolyl group, a thienyl group, a furyl group, an indolyl group, a benzindolyl group, a naphthoindolyl group, an isoindolyl group, a benzisoindolyl group, a naphthoisoindolyl group, a benzothioyl group, a benzofuranyl group, a carbazolyl group, a dibenzothioyl group, a dibenzothioyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzothioyl group, an azadibenzothioyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isoxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, a thiadiazolyl group, The term "divalent non-aromatic condensed heteropolycyclic group" as used herein refers to a divalent group having substantially the same structure as a monovalent non-aromatic condensed heteropolycyclic group.

[0286] As used herein, the term "C 6 -C 60 "Aryloxy" refers to -OA 102 (Among them, A 102 It is C 6 -C 60 aryl), and as used herein the term "C 6 -C 60 "Arylthio" refers to -SA 103 (Among them, A 103 It is C 6 -C 60 aryl).

[0287] As used herein, the term "C 7 -C 60 "Arylalkyl" refers to -A 104 A 105 (Among them, A 104 It is C 1 -C 54 Alkylene and A 105 It is C 6 -C 59 aryl), and as used herein the term "C2 -C 60 "Heteroarylalkyl" refers to -A 106 A 107 (Among them, A 106 It is C 1 -C 59 Alkylene and A 107 It is C 1 -C 59 heteroaryl).

[0288] As used herein, the term " 10a " can be:

[0289] deuterium, -F, -Cl, -Br, -I, hydroxy, cyano or nitro;

[0290] Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl, C 2 -C 60 Heteroarylalkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O) 2 (Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl or C 1 -C 60 Alkoxy;

[0291] C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl or C 2 -C 60 heteroarylalkyl, each of which is unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxy, cyano, nitro, C 1 -C 60 Alkyl, C 2 -C 60 Alkenyl, C 2 -C 60 Alkynyl, C 1 -C 60 Alkoxy, C 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 6 -C 60 Aryloxy, C 6 -C 60 Arylthio, C 7 -C 60 Arylalkyl, C 2 -C 60 Heteroarylalkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O) 2 (Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof; or

[0292] -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O) 2 (Q 31 ) or -P(=O)(Q 31 )(Q 32 ).

[0293] The Q used here1 To Q 3 , Q 11 To Q 13 , Q 21 To Q 23 and Q 31 To Q 33 can be independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C 1 -C 60 Alkyl; C 2 -C 60 Alkenyl; C 2 -C 60 Alkynyl; C 1 -C 60 Alkoxy; or unsubstituted or substituted with deuterium, -F, cyano, C 1 -C 60 Alkyl, C 1 -C 60 C alkoxy, phenyl, biphenyl or any combination thereof 3 -C 60 Carbocyclic group, C 1 -C 60 Heterocyclic group, C 7 -C 60 Arylalkyl or C 2 -C 60 Heteroarylalkyl.

[0294] As used herein, the term "heteroatom" refers to any suitable atom other than a carbon atom. Examples of heteroatoms include O, S, N, P, Si, B, Ge, Se, and any combination thereof.

[0295] As used herein, third row transition metals include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt) and / or gold (Au), among others.

[0296] The term "Ph" as used herein refers to phenyl, the term "Me" as used herein refers to methyl, the term "Et" as used herein refers to ethyl, the term "tert-Bu" or "Bu" as used herein refers to ethyl. t ” refers to tert-butyl, and the term “OMe” as used herein refers to methoxy.

[0297] As used herein, the term "biphenyl" refers to a "phenyl group substituted with a phenyl group". 6 -C 60 "substituted phenyl" having "aryl" as a substituent.

[0298] As used herein, the term "terphenyl" refers to a phenyl group substituted with a biphenyl group. 6 -C 60 Aryl C 6 -C 60 "substituted phenyl" having "aryl" as a substituent.

[0299] In the definitions of substituents herein, the number of carbon atoms is provided for illustrative purposes only. 1 -C 60 The 60 carbon atoms in the alkyl group are only examples, and the definition of alkyl group also applies to C 1 -C 20 The same applies to other functional groups (eg, aryl) and other numbers of atoms.

[0300] Any hydrogen in the compound structures described herein may optionally be replaced with deuterium.

[0301] Unless otherwise defined, * and *' as used herein refer to the binding sites to adjacent atoms in the corresponding formula.

[0302] Hereinafter, a compound and a light emitting device according to embodiments will be described in more detail with reference to examples.

[0303] Example

[0304] Hansen Solubility Parameters and Boiling Points of Solvents

[0305] For the solvents in Table 1, the boiling points and the dD (MPa) calculated by using the HSPiP program are shown. 0.5 )、dP(MPa 0.5 ) and dH(MPa 0.5 ) results.

[0306] Table 1

[0307] dD dP dH bp(℃) Cyclohexylbenzene 18.7 0.0 1.0 239 to 240 Octylbenzene 16.9 1.4 2.1 261 to 263 Hexadecane 15.9 0.1 0.1 287 2,7-Diisopropylnaphthalene 17.7 0.2 2.6 306 Ether 14.5 2.9 4.6 35 Ethyl 4-methylbenzoate 17.9 6.5 4.3 245

[0308] Preparation of solution composition

[0309] First solution composition: A red emission layer composition was prepared by dissolving 3 wt % of red InP quantum dots in cyclohexylbenzene as a solvent.

[0310] Second solution composition: A green emission layer composition was prepared by dissolving 3 wt % of green InP quantum dots in cyclohexylbenzene as a solvent.

[0311] Third solution composition: A blue emission layer composition was prepared by dissolving 3 wt % of H129 (MW: 835) and D-17 (1 wt % doped) in cyclohexylbenzene as a solvent.

[0312] Eleventh solution composition: An attempt was made to prepare a red emission layer composition by mixing 3 wt % of red InP quantum dots together in a solvent of diethyl ether, but the red InP quantum dots did not dissolve.

[0313] Twelfth solution composition: An attempt was made to prepare a green emission layer composition by mixing 3 wt % of green InP quantum dots together in a solvent of diethyl ether, but the green InP quantum dots did not dissolve.

[0314] Twenty-first solution composition: An attempt was made to prepare a red emission layer composition by mixing 3 wt % of red InP quantum dots together in a solvent of ethyl 4-methylbenzoate, but the red InP quantum dots did not dissolve.

[0315] Twenty-second solution composition: A green emission layer composition was attempted to be prepared by mixing 3 wt % of green InP quantum dots together in a solvent of ethyl 4-methylbenzoate, but the green InP quantum dots did not dissolve.

[0316] Thirtieth solution composition: A blue emission layer composition was prepared by dissolving 3 wt % of blue InP quantum dots in a solvent of cyclohexylbenzene.

[0317]

[0318] Manufacturing of electronic equipment

[0319] Example 1

[0320] Referring to the drawings, a hole injection layer and a hole transport layer are formed on the first pixel electrode 122-1, the second pixel electrode 122-2 and the third pixel electrode 122-3, and a pixel circuit is connected to the first pixel electrode 122-1, the second pixel electrode 122-2 and the third pixel electrode 122-3 in a corresponding light emitting area.

[0321] The first solution composition is inkjet printed in the light emitting area corresponding to the first pixel electrode 122-1 to form a The film with a thickness of 1000 Å was subsequently baked at 140°C for 10 minutes to form a red emission layer.

[0322] The second solution composition is inkjet printed in the light emitting area corresponding to the second pixel electrode 122-2 to form a The film with a thickness of 1000 Å was subsequently baked at 140°C for 10 minutes to form a green emission layer.

[0323] The third solution composition is inkjet printed in the light emitting area corresponding to the third pixel electrode 122-3 to form a The film with a thickness of 1000 Å was subsequently baked at 140° C. for 10 min to form a blue emission layer.

[0324] Next, an electron transport layer was formed on each emission layer, and then Ag and Mg were co-deposited at a weight ratio of 9:1. thickness to form a common cathode, and by using CPL to form A common cover layer with a thickness of is formed, thereby completing the manufacture of the electronic device.

[0325] Comparative Example 1

[0326] An attempt was made to form a red emission layer and a green emission layer in the light emitting area corresponding to the first pixel electrode 122-1 and the light emitting area corresponding to the second pixel electrode 122-2, respectively, by using the eleventh solution composition and the twelfth solution composition, but the red InP quantum dots and the green InP quantum dots were not dissolved, so that the emission layer could not be formed.

[0327] Comparative Example 2

[0328] An attempt was made to form a red emission layer and a green emission layer in the light-emitting area corresponding to the first pixel electrode 122-1 and the light-emitting area corresponding to the second pixel electrode 122-2, respectively, by using the twenty-first solution composition and the twenty-second solution composition, but the red InP quantum dots and the green InP quantum dots were not dissolved, so that the emission layer could not be formed.

[0329] Comparison Example 3

[0330] In addition to inkjet printing the thirtieth solution composition in the light emitting area corresponding to the third pixel electrode 122-3 to form a An electronic device was manufactured in substantially the same manner as in Example 1, except that a film with a thickness of 500 Å was formed and then baked at 140° C. for 10 minutes to form a blue emission layer.

[0331]

[0332] The lifespan of each of the electronic devices manufactured according to Example 1 and Comparative Example 3 was measured, and the results thereof are shown in Table 2.

[0333] Table 2

[0334]

[0335] Referring to Table 2, it can be seen that the electronic device of Example 1 exhibits excellent lifespan compared to the electronic device of Comparative Example 3.

[0336] T90 represents the time taken for the efficiency to decrease from an initial value to 90% of the initial value at 146 nits.

[0337] The light emitting device according to one or more embodiments has an improved lifespan.

[0338] It should be understood that the embodiments described herein should be considered to be descriptive only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the claims and their equivalents.

Claims

1. A method for manufacturing a light emitting device, the method comprising: forming a first emission layer by using a first solution composition through a solution process; forming a second emission layer by using a second solution composition through a solution process; as well as forming a third emission layer by using a third solution composition through a solution process, Wherein, two selected from the first solution composition, the second solution composition and the third solution composition independently include quantum dots, The remaining solution composition includes a host compound and a dopant compound, and The first solution composition, the second solution composition, and the third solution composition all include the same solvent.

2. The method according to claim 1, wherein: The solvent has a Hansen solubility parameter dD value of 15 or greater.

3. The method according to claim 1, wherein: The solvent has a Hansen solubility parameter dP value of 6.0 or less.

4. The method according to claim 1, wherein: The solvent has a Hansen solubility parameter dH value of 3.0 or less.

5. The method according to claim 1, wherein: The solvent has a boiling point of 200°C to 350°C.

6. The method according to claim 1, wherein: The solvent includes cyclohexylbenzene, octylbenzene, hexadecane, 2,7-diisopropylnaphthalene or any combination thereof.

7. The method according to claim 1, wherein: The solution process is spin coating, casting, Langmuir-Blodgett method or inkjet printing.

8. The method according to claim 1, in, The first emission layer is a red emission layer, the second emission layer is a green emission layer, and the third emission layer is a blue emission layer, The first solution composition and the second solution composition each independently include quantum dots, and The third solution composition includes a single host compound or at least two host compounds.

9. The method according to claim 8, wherein: The molecular weight of the single host compound or the average molecular weight of the at least two host compounds is 700 or more.

10. The method according to claim 1, in, The quantum dots all have a single structure or a core-shell structure, The core-shell structure comprises: a core comprising a semiconductor compound; and a shell comprising an oxide of a metal, a metalloid and / or a non-metal, a semiconductor compound or a combination thereof.

11. The method according to claim 10, wherein: The semiconductor compounds include: II-VI semiconductor compounds; III-V semiconductor compounds; III-VI semiconductor compounds; I-III-VI semiconductor compounds; IV-VI semiconductor compounds; IV elements or compounds; or any combination thereof.

12. The method according to claim 10, wherein: The oxides of the metal, metalloid and / or non-metal include SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4 or any combination thereof.

13. The method according to claim 10, wherein: The semiconductor compound includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe , HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, Cd ZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, In N, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNA s, InAlNSb, InAlPAs, InAlPSb, InZnP, InGaZnP, InAlZnP, GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, InGaS3, InGaSe3, AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS, AgInGaS2, SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, Si, Ge, SiC, SiGe or any combination thereof.

14. The method according to claim 1, wherein: The host compound includes a compound represented by Formula 301: Formula 301 [On 301 ] xb11 -[(L 301 ) xb1 -R 301 ] xb21 , Wherein, in Formula 301, Ar 301 and L 301 are independently unsubstituted or substituted with at least one R 10a C3-C 60 The carbocyclic group is either unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic group, xb11 is 1, 2, or 3, xb1 is an integer from 0 to 5, R 301 is hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, unsubstituted or substituted with at least one R 10a C1-C 60 Alkyl, unsubstituted or substituted with at least one R 10a C2-C 60 Alkenyl, unsubstituted or substituted with at least one R 10a C2-C 60 Alkynyl, unsubstituted or substituted with at least one R 10a C1-C 60 Alkoxy, unsubstituted or substituted with at least one R 10a C3-C 60 Carbocyclic group, unsubstituted or substituted with at least one R 10a C1-C 60 Heterocyclic group, -Si(Q 301 )(Q 302 )(Q 303 )、-N(Q 301 )(Q 302 )、-B(Q 301 )(Q 302 )、-C(=O)(Q 301 )、-S(=O)2(Q 301 ) or -P(=O)(Q 301 )(Q 302 ), xb21 is an integer from 1 to 5, and R 10a is: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro; Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Aralkyl, C2-C 60 Heteroaralkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O)2(Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl or C1-C 60 Alkoxy; Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Aralkyl, C2-C 60 Heteroaralkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O)2(Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Arylalkyl or C2-C 60 heteroarylalkyl; or -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O)2(Q 31 ) or -P(=O)(Q 31 )(Q 32 ), and Q 11 To Q 13 , Q 21 To Q 23 and Q 31 To Q 33 and Q 301 To Q 303 are independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkynyl; C1-C 60 Alkoxy; or unsubstituted or substituted with deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 C3-C4 alkyl, phenyl, biphenyl or any combination thereof 60 Carbocyclic group, C1-C 60 Heterocyclic group, C7-C 60 Arylalkyl or C2-C 60 Heteroaralkyl.

15. The method according to claim 14, wherein: The compound represented by Formula 301 includes one selected from the following compounds:

16. The method according to claim 1, wherein: The dopant compound includes a compound represented by Formula 1: Formula 1 Wherein, in Formula 1, Y1 to Y3 are independently O, S, N (R 24 )、B(R 24 )、C(R 24 )(R 25 ) or Si(R 24 )(R 25 ), c is 0 or 1, A 11 To A 13 are independently selected from C5-C 30 Carbocyclic groups and C1-C 30 Heterocyclic groups, R 21 To R 25 are independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, amino, amidino, hydrazine, hydrazone, carboxylic acid or its salt, sulfonic acid or its salt, phosphate or its salt, unsubstituted or substituted with at least one R 10a C1-C 60 Alkyl, unsubstituted or substituted with at least one R 10a C2-C 60 Alkenyl, unsubstituted or substituted with at least one R 10a C2-C 60 Alkynyl, unsubstituted or substituted with at least one R 10a C1-C 60 Alkoxy, unsubstituted or substituted with at least one R 10a C3-C 10 Cycloalkyl, unsubstituted or substituted with at least one R 10a C1-C 10 Heterocycloalkyl, unsubstituted or substituted with at least one R 10a C3-C 10 Cycloalkenyl, unsubstituted or substituted with at least one R 10a C1-C 10 Heterocycloalkenyl, unsubstituted or substituted with at least one R 10a C6-C 60 Aryl, unsubstituted or substituted with at least one R 10a C6-C 60 Aryloxy, unsubstituted or substituted with at least one R 10a C6-C 60 Arylthio, unsubstituted or substituted with at least one R 10a C1-C 60 Heteroaryl, unsubstituted or substituted with at least one R 10a A monovalent non-aromatic condensed polycyclic group, unsubstituted or substituted with at least one R 10a a monovalent non-aromatic condensed heteropolycyclic group, -Si(Q1)(Q2)(Q3), -N(Q1)(Q2), -B(Q1)(Q2), -P(Q1)(Q2), -C(=O)(Q1), -S(=O)2(Q1) and -P(=O)(Q1)(Q2), R 21 To R 25 are optionally linked to each other to form groups which are all unsubstituted or substituted with at least one R 10a C5-C 30 Carbocyclic group or C1-C 30 Heterocyclic groups, a21 to a23 are each independently an integer from 0 to 10, R 10a is: deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano or nitro; Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Aralkyl, C2-C 60 Heteroaralkyl, -Si(Q 11 )(Q 12 )(Q 13 )、-N(Q 11 )(Q 12 )、-B(Q 11 )(Q 12 )、-C(=O)(Q 11 )、-S(=O)2(Q 11 )、-P(=O)(Q 11 )(Q 12 ) or any combination thereof C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl or C1-C 60 Alkoxy; Unsubstituted or substituted with deuterium, -F, -Cl, -Br, -I, hydroxyl, cyano, nitro, C1-C 60 Alkyl, C2-C 60 Alkenyl, C2-C 60 Alkynyl, C1-C 60 Alkoxy, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Aralkyl, C2-C 60 Heteroaralkyl, -Si(Q 21 )(Q 22 )(Q 23 )、-N(Q 21 )(Q 22 )、-B(Q 21 )(Q 22 )、-C(=O)(Q 21 )、-S(=O)2(Q 21 )、-P(=O)(Q 21 )(Q 22 ) or any combination thereof C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy, C6-C 60 Arylthio, C7-C 60 Arylalkyl or C2-C 60 heteroarylalkyl; or -Si(Q 31 )(Q 32 )(Q 33 )、-N(Q 31 )(Q 32 )、-B(Q 31 )(Q 32 )、-C(=O)(Q 31 )、-S(=O)2(Q 31 ) or -P(=O)(Q 31 )(Q 32 ), and Q1 to Q3, Q 11 To Q 13 , Q 21 To Q 23 and Q 31 To Q 33 are independently: hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl; cyano; nitro; C1-C 60 Alkyl; C2-C 60 Alkenyl; C2-C 60 Alkynyl; C1-C 60 Alkoxy; or unsubstituted or substituted with deuterium, -F, cyano, C1-C 60 Alkyl, C1-C 60 C3-C4 alkyl, phenyl, biphenyl or any combination thereof 60 Carbocyclic group, C1-C 60 Heterocyclic group, C7-C 60 Arylalkyl or C2-C 60 Heteroaralkyl.

17. The method according to claim 16, wherein: The compound represented by Formula 1 includes one selected from the following compounds:

18. A light emitting device, comprising: a first intermediate layer comprising a first pixel electrode, a counter electrode facing the first pixel electrode, and a first emission layer between the first pixel electrode and the counter electrode; a second intermediate layer including a second pixel electrode, the counter electrode facing the second pixel electrode, and a second emission layer between the second pixel electrode and the counter electrode; as well as A third intermediate layer includes a third pixel electrode, the counter electrode facing the third pixel electrode, and a third emission layer between the third pixel electrode and the counter electrode. The first emission layer, the second emission layer and the third emission layer are formed by the method according to claim 1.

19. The light emitting device according to claim 18, in, The first pixel electrode, the second pixel electrode and the third pixel electrode are anodes, The counter electrode is a cathode, and The first intermediate layer, the second intermediate layer and the third intermediate layer further include: an electron transport region, respectively between the counter electrode and the first emission layer, between the counter electrode and the second emission layer, and between the counter electrode and the third emission layer, and each includes a hole blocking layer, an electron transport layer, an electron injection layer or any combination thereof; and / or The hole transport regions are respectively between the first pixel electrode and the first emission layer, between the second pixel electrode and the second emission layer, and between the third pixel electrode and the third emission layer, and each includes a hole injection layer, a hole transport layer, an emission auxiliary layer, an electron blocking layer or any combination thereof.

20. An electronic device comprising the light emitting device according to claim 18.

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