Probe contact detection system based on multi-channel pressure sensitive membrane sensor

Abstract

The disclosure provides a probe contact detection system based on a multi-channel pressure-sensitive film sensor, relates to the technical field of semiconductor chip packaging and testing, and aims to solve the technical problems of low sensitivity, limited area and uneven contact pressure in traditional mechanical or optical contact detection methods. The system comprises: a stage, wherein the stage is provided with a multi-channel pressure-sensitive film sensor; a chip to be tested, which is vacuum adsorbed on the surface of the multi-channel pressure-sensitive film sensor; a metal probe, which is in contact with the electrode of the chip to be tested and is used to apply pressure to the chip to be tested under external force; wherein, under the condition that a voltage is applied to the electrode of the chip to be tested, the metal probe is pressed to apply pressure to the chip to be tested, at this time, the output signals of the multi-channel pressure-sensitive film sensor are collected, and after analog-digital conversion, signal filtering and denoising processing, a two-dimensional pressure mapping diagram is generated to detect the pressure state and position parameters of the metal probe.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor chip packaging and testing technology, and more specifically, to a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor. Background Technology

[0002] In the field of chip packaging and testing, the contact quality between the probe tip and the chip electrode directly affects the accuracy of test results and the stability of chip performance. This is especially true in testing scenarios involving microchips or multiple probe contacts, where ensuring reliable contact between the probe and the electrode is crucial. Traditional contact detection methods primarily rely on mechanical or optical inspection, but these methods have the following drawbacks in practical applications:

[0003] (1) Insensitive mechanical contact: Mechanical detection is difficult to sensitively reflect the pressure changes of tiny contact points, which can easily cause detection deviations and make it impossible to judge the stable contact between the probe and the chip in a timely manner.

[0004] (2) Limitations of optical detection: Optical detection methods are very sensitive to factors such as external lighting and slight shifts in probe position, which affect the accuracy of detection. Furthermore, optical equipment is expensive and not suitable for large-scale automated testing.

[0005] (3) Uneven contact pressure: During the process of the probe contacting the chip electrode, uneven contact pressure can lead to local poor contact or overpressure damage, thereby affecting the electrical performance and service life of the chip.

[0006] Against this backdrop, contact detection technology based on pressure-sensitive multi-channel thin-film sensors has gradually attracted attention. Multi-channel pressure-sensitive thin-film sensors possess sensitive pressure detection capabilities and high-resolution spatial distribution measurement capabilities, providing pressure distribution information and probe contact point location data. The unique advantage of this sensor lies in its ability to monitor the pressure at multiple contact points in real time while the probe is in contact, thereby improving detection accuracy and reliability. Summary of the Invention

[0007] In view of this, this disclosure provides a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor to solve the technical problems of low sensitivity, limited area, and uneven contact pressure in traditional mechanical or optical contact detection methods.

[0008] One aspect of this disclosure provides a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor, comprising: a stage, wherein the stage is configured with a multi-channel pressure-sensitive thin-film sensor; a chip under test, which is vacuum-adsorbed onto the surface of the multi-channel pressure-sensitive thin-film sensor; and a metal probe, which contacts the electrodes of the chip under test and is used to apply pressure to the chip under test under external force; wherein, when a voltage is applied to the electrodes of the chip under test, the metal probe is pressed down to apply pressure to the chip under test, and at this time, the pressure state and position parameters of the metal probe are detected by acquiring the output signals of the multi-channel pressure-sensitive thin-film sensor.

[0009] According to embodiments of this disclosure, the probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor further includes: a sensor signal output microstrip line for outputting the output signals of the multi-channel pressure-sensitive thin-film sensor.

[0010] According to embodiments of this disclosure, the stage is provided with multiple vacuum adsorption holes for adsorbing the chip to be tested under vacuum conditions.

[0011] According to embodiments of this disclosure, the stage is further provided with a plurality of fixing holes for fixing to the base.

[0012] According to embodiments of this disclosure, the stage is further provided with multiple fixing slots for fixing multiple channels of pressure-sensitive thin-film sensors.

[0013] According to embodiments of this disclosure, the multi-channel pressure-sensitive thin-film sensor includes a resistive pressure-sensitive sensor or a capacitive pressure-sensitive sensor.

[0014] According to embodiments of this disclosure, each pressure-sensitive thin-film sensor in a multi-channel pressure-sensitive thin-film sensor corresponds to a sensing unit, and each sensing unit corresponds to an independent resistance value or capacitance value.

[0015] According to embodiments of this disclosure, under the action of pressure P, the resistance change of the sensing unit corresponding to the i-th row and j-th column in the resistive pressure sensor is as follows:

[0016]

[0017] in, This represents the resistance of the sensing unit in the i-th row and j-th column under pressure P. Represents the resistance when there is no pressure. This represents the resistivity coefficient of the material.

[0018] According to embodiments of this disclosure, under the action of pressure P, the capacitance change corresponding to the sensing unit in the i-th row and j-th column of the capacitive pressure sensor is as follows:

[0019]

[0020] in, This represents the capacitance of the sensing unit in the i-th row and j-th column under pressure P. Capacitance when there is no pressure It represents the sensitivity coefficient of material thickness change to pressure.

[0021] According to embodiments of this disclosure, the probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor further includes: a data processing module, used to perform analog-to-digital conversion, signal filtering, and noise reduction on the output signals of the multi-channel pressure-sensitive thin-film sensor, and generate a two-dimensional pressure mapping map.

[0022] The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor provided in this disclosure has at least the following beneficial effects:

[0023] (1) The probe contact detection system based on a multi-channel pressure-sensitive thin film sensor provided in this embodiment of the present disclosure can realize the real-time detection of the pressure state and position parameters of each probe in a typical scenario where a chip is powered on and tested by a metal probe.

[0024] (2) The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor provided in this embodiment of the invention acquires signals transmitted from multiple channels of the pressure-sensitive thin-film sensor, performs analog-to-digital conversion, signal filtering and denoising to generate a two-dimensional pressure map, and then compares the experimentally determined optimal pressure value and reference position with the values ​​in the map to determine whether the probe's pressing position and force are appropriate. This system allows for real-time monitoring of the pressure state and position parameters of each metal probe, reducing reliance on microscopic observation and providing data support for semiconductor chip testing and contact quality assessment. Attached Figure Description

[0025] The above and other objects, features and advantages of this disclosure will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:

[0026] Figure 1 The diagram illustrates an application scenario of a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to an embodiment of the present disclosure in an electrically powered environment.

[0027] Figure 2 The diagram schematically illustrates a partial enlarged view of a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to an embodiment of the present disclosure in an electrically powered scenario.

[0028] Figure 3 The flowchart illustrating the signal processing of a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to an embodiment of the present disclosure in an electrically powered scenario is shown.

[0029] [Attached image labels]

[0030] 1-Stage, 2-Fixing hole, 3-Chip under test, 4-Multi-channel pressure-sensitive thin-film sensor, 5-Metal probe, 6-Sensor signal output microstrip line, 7-Vacuum adsorption hole, 8-Fixing groove, 9-Single-channel pressure-sensitive thin-film sensor, 10-Sensing unit corresponding to single-channel pressure-sensitive thin-film sensor. Detailed Implementation

[0031] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0032] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0033] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0034] When using expressions such as "at least one of A, B and C", they should generally be interpreted in accordance with the meaning that is commonly understood by those skilled in the art (e.g., "a system having at least one of A, B and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B and C, etc.).

[0035] In the field of chip packaging and testing, the contact quality between the probe tip and the chip electrode directly affects the accuracy of test results and the stability of chip performance. This is especially true in testing scenarios involving microchips or multiple probe contacts, where ensuring reliable contact between the probe and the electrode is crucial. Traditional contact detection methods primarily rely on mechanical or optical inspection, but these methods have the following drawbacks in practical applications:

[0036] (1) Insensitive mechanical contact: Mechanical detection is difficult to sensitively reflect the pressure changes of tiny contact points, which can easily cause detection deviations and make it impossible to judge the stable contact between the probe and the chip in a timely manner.

[0037] (2) Limitations of optical detection: Optical detection methods are very sensitive to factors such as external lighting and slight shifts in probe position, which affect the accuracy of detection. Furthermore, optical equipment is expensive and not suitable for large-scale automated testing.

[0038] (3) Uneven contact pressure: During the process of the probe contacting the chip electrode, uneven contact pressure can lead to local poor contact or overpressure damage, thereby affecting the electrical performance and service life of the chip.

[0039] Against this backdrop, contact detection technology based on pressure-sensitive multi-channel thin-film sensors has gradually attracted attention. Multi-channel pressure-sensitive thin-film sensors possess sensitive pressure detection capabilities and high-resolution spatial distribution measurement capabilities, providing pressure distribution information and probe contact point location data. The unique advantage of this sensor lies in its ability to monitor the pressure at multiple contact points in real time while the probe is in contact, thereby improving detection accuracy and reliability.

[0040] Based on this, the present disclosure provides a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor to solve the technical problems of low sensitivity, limited area, and uneven contact pressure in traditional mechanical or optical contact detection methods.

[0041] The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor may include, for example, a stage, a chip under test, and a metal probe.

[0042] The stage is equipped with a multi-channel pressure-sensitive thin-film sensor.

[0043] The chip under test is vacuum adsorbed onto the surface of a multi-channel pressure-sensitive thin-film sensor.

[0044] The metal probe contacts the electrodes of the chip under test to apply pressure to the chip under test under external force.

[0045] In this embodiment, when a voltage is applied to the electrodes of the chip under test, a metal probe is pressed down to apply pressure to the chip under test. At this time, the pressure state and position parameters of the metal probe are detected by acquiring the output signals of multiple channels of pressure-sensitive thin-film sensors.

[0046] The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor provided in this disclosure, in a typical scenario where a semiconductor chip is powered on by a metal probe, enables real-time detection of the pressure state and position parameters of each probe by introducing a multi-channel pressure-sensitive thin-film sensor.

[0047] To make the objectives, technical solutions, and advantages of this disclosure clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0048] Figure 1 The diagram illustrates an application scenario of a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to an embodiment of the present disclosure in an electrically powered environment.

[0049] like Figure 1 As shown, the probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor in this embodiment may include, for example, a stage 1, a chip under test 3, and a metal probe 5.

[0050] The stage 1 is equipped with a multi-channel pressure-sensitive thin-film sensor 4.

[0051] In this embodiment, the shape and size of the stage 1 are not limited and can be freely designed according to the shape and size of the chip 3 under test.

[0052] The chip under test 3 is vacuum adsorbed onto the surface of the multi-channel pressure-sensitive thin-film sensor 4.

[0053] The metal probe 5 contacts the electrodes of the chip 3 under test and is used to apply pressure to the chip 3 under test under external force.

[0054] In this embodiment, the type of metal probe 5 is not limited; it can be a high-frequency AC probe or a DC probe.

[0055] In this process, when a voltage is applied to the electrodes of the chip 3 under test, the metal probe 5 is pressed down to apply pressure to the chip 3 under test. At this time, the pressure state and position parameters of the metal probe 5 are detected by acquiring the output signals of the pressure-sensitive thin-film sensor 4 with multiple channels.

[0056] The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor provided in this disclosure, in a typical scenario where a semiconductor chip is powered on by a metal probe, enables real-time detection of the pressure state and position parameters of each probe by introducing a multi-channel pressure-sensitive thin-film sensor.

[0057] According to embodiments of this disclosure, the probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor further includes: a sensor signal output microstrip line 6.

[0058] The sensor signal output microstrip line 6 is used to output the output signal of the multi-channel pressure-sensitive thin-film sensor 4.

[0059] According to an embodiment of this disclosure, the stage 1 is provided with a plurality of vacuum adsorption holes 7 for adsorbing the chip 3 to be tested under vacuum conditions.

[0060] According to an embodiment of this disclosure, the platform 1 is also provided with a plurality of fixing holes 2 for fixing to a base, which is usually located at the bottom of the platform and is used to support the platform 1.

[0061] According to an embodiment of this disclosure, the stage 1 is further provided with a plurality of fixing slots 8 for fixing a plurality of pressure-sensitive thin-film sensors 4.

[0062] According to embodiments of this disclosure, the multi-channel pressure-sensitive thin-film sensor 4 includes either a resistive pressure-sensitive sensor or a capacitive pressure-sensitive sensor.

[0063] According to embodiments of this disclosure, each pressure-sensitive thin-film sensor in the multi-channel pressure-sensitive thin-film sensor 4 corresponds to a sensing unit, and each sensing unit corresponds to an independent resistance value or capacitance value.

[0064] In this embodiment, the multi-channel pressure-sensitive thin-film sensor 4 is mainly based on the change in resistance or capacitance of the pressure-sensitive material under different external forces.

[0065] For a resistive pressure sensor, the resistance R of the material changes under pressure P. Since each sensing element has an independent resistance value, the resistance change for the sensing element in the i-th row and j-th column can be characterized as follows:

[0066]

[0067] in, This represents the resistance of the sensing unit in the i-th row and j-th column under pressure P. This indicates the resistance when there is no pressure (static resistance value). It represents the resistance sensitivity coefficient of a material, which is related to the material's properties, thickness, and temperature.

[0068] Pressure applied to the sensing unit The pressure usually applied by the metal probe 5 and the effective contact area of ​​the sensing unit Relevant, namely: The change in resistance can be further characterized as:

[0069]

[0070] For a capacitive pressure sensor, under the action of pressure P, the capacitance change of the sensing unit in the i-th row and j-th column of the capacitive pressure sensor is as follows:

[0071]

[0072] in, This represents the capacitance of the sensing unit in the i-th row and j-th column under pressure P. This indicates the capacitance when there is no pressure (static capacitance value). It represents the sensitivity coefficient of material thickness change to pressure.

[0073] In this embodiment, the multi-channel pressure-sensitive thin-film sensor 4 is composed of... It consists of an array of pressure-sensitive thin-film sensors, and its overall output is either a resistance matrix or a capacitance matrix for each sensing unit:

[0074] The resistance matrix R(P) is:

[0075]

[0076] The capacitance matrix C(P) is:

[0077]

[0078] In the signal acquisition and processing process, the resistance or capacitance of each sensing unit changes. Let... If the measured voltage of the sensing unit in row i and column j is , then the current is . for:

[0079]

[0080] Specifically, for capacitive pressure sensors, if driven by AC power, the capacitance... Capacitive reactance generated It can be represented as:

[0081]

[0082] According to embodiments of this disclosure, the probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor further includes: a data processing module, used to perform analog-to-digital conversion, signal filtering, and noise reduction on the output signals of the multi-channel pressure-sensitive thin-film sensor, and generate a two-dimensional pressure mapping map.

[0083] In this embodiment, the pressure value of each sensing unit is calculated by performing analog-to-digital conversion, signal filtering, and noise reduction on the collected current or voltage values, and then a two-dimensional pressure mapping diagram is drawn.

[0084] Figure 2 The diagram schematically illustrates a partial enlarged view of a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to an embodiment of the present disclosure in an electrically powered scenario.

[0085] like Figure 2As shown in the enlarged view of a portion of the probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to an embodiment of this disclosure, under an applied power scenario, the stage 1 has multiple fixing slots 8 for fixing the multi-channel pressure-sensitive thin-film sensor 4. The multi-channel pressure-sensitive thin-film sensor 4 includes multiple single-channel pressure-sensitive thin-film sensors 9, and each pressure-sensitive thin-film sensor 4 corresponds to a sensing unit 10.

[0086] Figure 3 The flowchart illustrating the signal processing of a probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to an embodiment of the present disclosure in an electrically powered scenario is shown.

[0087] like Figure 3 As shown, the signal processing flow of the probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to an embodiment of this disclosure in a powered scenario is as follows: when a voltage is applied to the electrode of the chip under test 3, the metal probe 5 is pressed down to apply pressure to the chip under test 3, and this pressure is transmitted to the corresponding sensing unit in the multi-channel pressure-sensitive thin-film sensor 4.

[0088] At this time, the output signals of the pressure-sensitive thin-film sensor 4 with multiple channels are collected, and then the output signals are subjected to analog-to-digital conversion, signal filtering and noise reduction processing, and a two-dimensional pressure mapping is generated to evaluate the downward pressure of the metal probe 5.

[0089] The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor provided in this disclosure acquires signals transmitted from multiple channels of the pressure-sensitive thin-film sensor. Through analog-to-digital conversion, signal filtering, and noise reduction, a two-dimensional pressure map is generated. Then, the optimal pressure value and reference position determined experimentally are compared with the values ​​in the map to determine whether the probe's pressure position and force are appropriate. This system allows for real-time monitoring of the pressure state and position parameters of each metal probe, reducing reliance on microscopic observation and providing data support for semiconductor chip testing and contact quality assessment.

[0090] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present disclosure. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram or flowchart, and combinations of blocks in a block diagram or flowchart, may be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions. Those skilled in the art will understand that the features described in the various embodiments of the present disclosure can be combined and / or combined in various ways, even if such combinations are not explicitly described in the present disclosure. In particular, the features described in the various embodiments of this disclosure may be combined and / or combined in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.

[0091] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.

Claims

1. A probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor, characterized in that, include: A stage, wherein the stage is equipped with a multi-channel pressure-sensitive thin-film sensor and the stage is provided with a multi-vacuum adsorption hole for adsorbing the chip to be tested under vacuum conditions; The chip under test is vacuum-adsorbed onto the surface of the pressure-sensitive thin-film sensor of the multiple channels; A metal probe is used to contact the electrodes of the chip under test and to apply pressure to the chip under test under external force. A sensor signal output microstrip line is used to output the output signals of the pressure-sensitive thin-film sensors with multiple channels; The data processing module is used to perform analog-to-digital conversion, signal filtering, and noise reduction on the output signals of the multiple channels of pressure-sensitive thin-film sensors, and to generate a two-dimensional pressure mapping map. Specifically, when a voltage is applied to the electrodes of the chip under test, the metal probe is pressed down to apply pressure to the chip under test. At this time, the pressure state and position parameters of the metal probe are detected by acquiring the output signals of the pressure-sensitive thin-film sensors of the multiple channels.

2. The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to claim 1, characterized in that, The platform is also provided with multiple fixing holes for fixing to the base.

3. The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to claim 1, characterized in that, The stage is also provided with multiple fixing slots for fixing the pressure-sensitive thin-film sensors of the multiple channels.

4. The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to claim 1, characterized in that, The multiple channels of the pressure-sensitive thin-film sensor include: resistive pressure-sensitive sensor or capacitive pressure-sensitive sensor.

5. The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to claim 4, characterized in that, Each pressure-sensitive thin-film sensor in the multiple channels corresponds to a sensing unit, and each sensing unit corresponds to an independent resistance value or capacitance value.

6. The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to claim 5, characterized in that, Under pressure P, the resistance of the sensing unit in the i-th row and j-th column of the resistive pressure sensor is: in, This represents the resistance of the sensing unit in the i-th row and j-th column under pressure P. Represents the resistance when there is no pressure. Indicates the resistivity coefficient of the material. This indicates the pressure applied to the sensing unit.

7. The probe contact detection system based on a multi-channel pressure-sensitive thin-film sensor according to claim 5, characterized in that, Under pressure P, the capacitance corresponding to the sensing unit in the i-th row and j-th column of the capacitive pressure sensor is: in, This represents the capacitance of the sensing unit in the i-th row and j-th column under pressure P. Capacitance when there is no pressure The sensitivity coefficient representing the change in material thickness to pressure. A represents the pressure applied to the sensing unit. ij This indicates the effective contact area of ​​the sensing unit.

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