Multi-layer NFT for hamr with thermal splitter connecting metal layers

Abstract

The present disclosure generally relates to a magnetic recording head for a magnetic media driver. The magnetic recording head includes: a main pole; a waveguide disposed adjacent to the main pole; a thermal diverter disposed between the main pole and the waveguide, the thermal diverter recessed from a media facing surface (MFS); and a near field transducer (NFT) coupled between the main pole and the waveguide at the MFS. The NFT includes: a first metal layer disposed adjacent to the waveguide and in contact with the first insulating layer; a dielectric gap layer disposed on and in contact with the first metal layer; and a second metal layer disposed on and in contact with the dielectric gap layer and the second insulating layer. The first metal layer, the dielectric gap layer, and the second metal layer are each disposed in contact with the thermal diverter.

Description

Background Art Technical Field

[0001] Embodiments of the present disclosure generally relate to magnetic recording heads for magnetic media drives.

[0002] Description of Related Art

[0003] The core of the function and capability of a computer is to store data and write data to a data storage device such as a magnetic media drive (e.g., a hard disk drive (HDD)). The amount of data processed by computers is increasing rapidly. Higher recording density of magnetic recording media is needed to increase the function and capability of computers.

[0004] In order to achieve higher recording densities (such as more than 2 terabit / inch) of magnetic recording media 2 To reduce the recording density of the magnetic recording field (MFS), the width and spacing of the write tracks are narrowed, and therefore the corresponding magnetic recording bits encoded in each write track are narrowed. One challenge in reducing the width and spacing of the write tracks is to reduce the surface area of ​​the main pole of the magnetic recording write head at the medium facing surface (MFS). As the main pole becomes smaller, the recording field also becomes smaller, thus limiting the effectiveness of the magnetic recording write head.

[0005] Heat-assisted magnetic recording (HAMR) and microwave-assisted magnetic recording (MAMR) are two types of energy-assisted magnetic recording (EAMR) technologies for improving the recording density of magnetic recording media. In HAMR, a laser source is located next to or near the writing element of a magnetic recording write head to generate heat, such as a laser source excites a near-field transducer (NFT) to generate heat at the writing position of the magnetic recording medium. Gold is commonly used for NFT materials to achieve high optical efficiency, but gold has a low melting point, and when the NFT is heated for a long time, deformation of the NFT is a problem. Near the point where the optical near field is generated, the NFT temperature is particularly high, and the maximum temperature may exceed the operating temperature of the disk device by more than 150 degrees Celsius, causing the NFT to deform.

[0006] Therefore, there is a need in the art for improved HAMR magnetic media drives. Summary of the invention

[0007] The present disclosure as a whole relates to a magnetic recording head for a magnetic media drive. The magnetic recording head includes: a main pole; a waveguide disposed adjacent to the main pole; a heat shunt disposed between the main pole and the waveguide, the heat shunt being recessed from a medium facing surface (MFS); and a near field transducer (NFT) coupled between the main pole and the waveguide at the MFS. The NFT includes: a first metal layer disposed adjacent to the waveguide and in contact with the first insulating layer; a dielectric gap layer disposed on the first metal layer and in contact with the first metal layer; and a second metal layer disposed on the dielectric gap layer and the second insulating layer and in contact with the dielectric gap layer and the second insulating layer. The first metal layer, the dielectric gap layer, and the second metal layer are each disposed in contact with the heat shunt.

[0008] In one embodiment, a magnetic recording head includes: a main pole; a waveguide disposed adjacent to the main pole; a heat shunt disposed between the main pole and the waveguide, the heat shunt being recessed from a medium facing surface (MFS); and a near field transducer (NFT) coupled between the main pole and the waveguide at the MFS, the NFT including: a first metal layer disposed adjacent to the waveguide; a dielectric gap layer disposed on and in contact with the first metal layer; and a second metal layer disposed on and in contact with the dielectric gap layer, wherein the first metal layer and the second metal layer are each disposed in contact with the heat shunt.

[0009] In another embodiment, a magnetic recording head includes: a main pole; a waveguide disposed adjacent to the main pole; a heat shunt disposed between the main pole and the waveguide, the heat shunt being recessed from a medium facing surface (MFS); a first insulating layer disposed between the waveguide and the heat shunt; a second insulating layer disposed between the main pole and the heat shunt at the MFS; and a near field transducer (NFT) coupled between the first insulating layer and the second insulating layer at the MFS, the NFT including: a first metal layer disposed in contact with the first insulating layer; a dielectric gap layer disposed on the first metal layer; and a second metal layer disposed on the dielectric gap layer and the second insulating layer, wherein the first metal layer, the dielectric gap layer, and the second metal layer are each disposed in contact with the heat shunt.

[0010] In yet another embodiment, a method of a magnetic recording head includes forming a near field transducer (NFT) by depositing a first metal layer, depositing a dielectric gap layer on and in contact with the first metal layer, and depositing a second metal layer on and in contact with the dielectric gap layer, removing a portion of each of the first metal layer, the dielectric gap layer, and the second metal layer, wherein the removed portion of each of the first metal layer, the dielectric gap layer, and the second metal layer is at a position recessed from a surface facing a medium; and depositing a heat shunt in the removed portion of each of the first metal layer, the dielectric gap layer, and the second metal layer, such that the heat shunt is disposed in contact with the first metal layer, the dielectric gap layer, and the second metal layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Thus, a detailed understanding of the manner in which the above-described features of the present disclosure are understood, a more particular description of the present disclosure, the above brief overview, may be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only typical embodiments of the present disclosure and are therefore not to be considered limiting of its scope, as the present disclosure may admit to other equally effective embodiments.

[0012] Figure 1 is a schematic diagram of certain embodiments of a magnetic media drive including a HAMR magnetic write head.

[0013] Figure 2 is a schematic diagram of certain embodiments of a cross-sectional side view of a HAMR write head facing a magnetic disk.

[0014] Figure 3A A cross-sectional view of a HAMR write head is shown according to one embodiment.

[0015] Figure 3B According to one embodiment, Figure 3A A cross-sectional view of a portion of the NFT of a HAMR write head.

[0016] Figure 3C According to one embodiment, FIG. 3A to FIG. 3B MFS view of the HAMR write head.

[0017] FIG. 4A to FIG. 4D The formation of the embodiment according to the present invention is shown FIG. 3A to FIG. 3B Various perspectives of NFTs.

[0018] FIG. 5A to FIG. 5E Shown according to various embodiments FIG. 3A to FIG. 3C The HAMR write head is Figure 3A Cross-sectional view of line AA in the head.

[0019] FIG. 6A to FIG. 6C Shown according to various embodiments FIG. 3A to FIG. 3C The HAMR write head is Figure 3A Cross-sectional view along line AA in which the NFT includes an additional metal sublayer.

[0020] 7A to 7C A method of manufacturing a device further comprising one or more adhesive layers according to various embodiments is shown. FIG. 3A to FIG. 3C The HAMR write head is Figure 3A Cross-sectional view along line AA in FIG.

[0021] Fig. 8A A cross-sectional view of a HAMR write head according to another embodiment is shown.

[0022] Figure 8B According to one embodiment, Fig. 8A A cross-sectional view of a portion of the NFT of a HAMR write head along line AA.

[0023] 9A to 9C A dielectric interlayer having an inclined dielectric interlayer according to various embodiments is shown. FIG. 3A to FIG. 3C The HAMR write head is Figure 3A Cross-sectional view along line AA in FIG.

[0024] FIG. 10A to FIG. 10C Shown according to various embodiments FIG. 3A to FIG. 3C The HAMR write head is Figure 3A Cross-sectional view along line AA in FIG.

[0025] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation. DETAILED DESCRIPTION

[0026] Hereinafter, reference is made to embodiments of the present disclosure. However, it should be understood that the present disclosure is not limited to the specifically described embodiments. On the contrary, it is contemplated that any combination of the following features and elements (whether or not related to different embodiments) is to realize and practice the present disclosure. In addition, although the embodiments of the present disclosure can achieve advantages that are superior to other possible solutions and / or superior to the prior art, whether a specific advantage is achieved by a given embodiment is not a limitation to the present disclosure. Therefore, the following aspects, features, embodiments and advantages are merely illustrative and are not considered to be elements or limitations of the appended claims unless explicitly stated in the claims. Similarly, reference to "the present disclosure" should not be interpreted as a summary of any inventive subject matter disclosed herein, and should not be considered to be elements or limitations of the appended claims unless explicitly stated in the claims.

[0027] The present disclosure as a whole relates to a magnetic recording head for a magnetic media drive. The magnetic recording head includes: a main pole; a waveguide disposed adjacent to the main pole; a heat shunt disposed between the main pole and the waveguide, the heat shunt being recessed from a medium facing surface (MFS); and a near field transducer (NFT) coupled between the main pole and the waveguide at the MFS. The NFT includes: a first metal layer disposed adjacent to the waveguide and in contact with the first insulating layer; a dielectric gap layer disposed on the first metal layer and in contact with the first metal layer; and a second metal layer disposed on the dielectric gap layer and the second insulating layer and in contact with the dielectric gap layer and the second insulating layer. The first metal layer, the dielectric gap layer, and the second metal layer are each disposed in contact with the heat shunt.

[0028] Figure 1 1 is a schematic diagram of certain embodiments of a magnetic media drive 100 including an energy assisted magnetic recording (EAMR) write head, such as heat assisted magnetic recording (HAMR). Such a magnetic media drive may be a single drive / device or include multiple drives / devices. For ease of illustration, a single disk drive 100 is shown according to one embodiment. The disk drive 100 includes at least one rotatable magnetic recording medium 112 (commonly referred to as disk 112) supported on a spindle 114 and rotated by a drive motor 118. The magnetic recording on each disk 112 is in the form of any suitable pattern of data tracks, such as an annular pattern of concentric data tracks (not shown) on the disk 112.

[0029] At least one slider 113 is positioned near the disk 112. Each slider 113 supports a head assembly 121 that includes one or more read heads and one or more write heads (such as a HAMR write head). As the disk 112 rotates, the slider 113 moves radially in and out over the disk surface 122 so that the head assembly 121 can access different tracks of the disk 112 where desired data is written. Each slider 113 is attached to an actuator arm 119 via a suspension 115. The suspension 115 provides a slight spring force that biases the slider 113 toward the disk surface 122. Each actuator arm 119 is attached to an actuator 127. As shown in FIG. Figure 1 The actuator 127 shown may be a voice coil motor (VCM). A VCM includes a coil that can move within a fixed magnetic field, with the direction and speed of the coil movement controlled by a motor current signal supplied by the control unit 129.

[0030] During operation of the disk drive 100, the rotation of the disk 112 creates an air bearing between the slider 113 and the disk surface 122, which exerts an upward force or lift on the slider 113. Thus, during normal operation, the air bearing counteracts the slight spring force of the suspension 115 and supports the slider 113 off and slightly above the disk surface 122 by a small, substantially constant spacing.

[0031] The various components of the disk drive 100 are controlled in operation by control signals (such as access control signals and internal clock signals) generated by a control unit 129. Typically, the control unit 129 includes logic control circuits, memory devices, and a microprocessor. The control unit 129 generates control signals that control various system operations, such as drive motor control signals on line 123 and head position and seek control signals on line 128. The control signals on line 128 provide the desired current distribution to optimally move and position the slider 113 to the desired data track on the disk 112. Write signals and read signals are transmitted to and from the head assembly 121 through the recording channel 125. Figure 1 Certain embodiments of the magnetic media drive may also include multiple media or disks, multiple actuators, and / or multiple sliders.

[0032] Figure 2 is a schematic diagram of certain embodiments of a cross-sectional side view of a HAMR write head 230 facing a disk 112. The HAMR write head 230 may correspond to Figure 1 The HAMR write head 230 may be a portion of the read head / recording head assembly 121 described in or correspond to a recording head for other magnetic media drives. The HAMR write head 230 includes a medium facing surface (MFS), such as an air bearing surface (ABS) or a gas bearing surface (GBS), which faces the disk 112. Figure 2As shown, the magnetic disk 112 and the HAMR write head 230 are relatively moved in the direction indicated by arrow 282 (necessitating a change of direction).

[0033] The HAMR write head 230 includes a main pole 236 disposed between a front return shield 234 and a rear return shield 238. The main pole 236 may include a main pole tip 237 at the MFS. The main pole tip 237 may or may not include a front bevel and / or a rear bevel. A coil 260 surrounding the main pole 236 excites the main pole tip 237 to generate a write magnetic field for affecting the magnetic medium of the rotatable disk 112. The coil 260 may be a spiral structure or one or more sets of flat structures. The front return shield 234 and / or the rear return shield 238 may act as a return pole for the main pole 236.

[0034] The disk 112 is positioned adjacent to or beneath the HAMR write head 230. The magnetic field generated by the current in the coil 260 is used to control the magnetization direction of the bits in the disk 112.

[0035] The HAMR write head 230 includes a structure for heating the disk 112 near the location where the main pole tip 237 applies a magnetic write field to the storage medium. The waveguide 242 is positioned between the main pole 236 and the front return shield 234. The waveguide 242 may include a core layer and a cladding layer surrounding the core layer. The waveguide 242 conducts light from a light source 278 of electromagnetic radiation, which may be, for example, ultraviolet light, infrared light, or visible light. The light source 278 may be, for example, an edge emitting laser diode (EELD) or a vertical cavity surface emitting laser (VCSEL) device, a laser diode, or other suitable laser light source for directing a light beam to the waveguide 242. Various known techniques for coupling the light source 278 into the waveguide 242 may be used. For example, the light source 278 may work in conjunction with an optical fiber and external optical devices for directing a light beam to the waveguide 242. Alternatively, the light source 278 may be mounted on the waveguide 242, and the light beam may be directly coupled into the waveguide 242 without an external optical configuration. As the medium moves relative to the HAMR write head 230 as indicated by arrow 282, once the light beam is coupled into the waveguide 242, the light propagates through the waveguide and heats a portion of the medium.

[0036] The HAMR write head 230 may include a near field transducer (NFT) 284 to concentrate heat near the end of the waveguide 242. The NFT 284 is positioned in or adjacent to the waveguide 242, which is near or at the MFS. Light from the waveguide 242 is absorbed by the NFT 284 and excites a surface plasmon that travels along the outside of the NFT 284 toward the MFS, thereby concentrating charge at the tip of the NFT 284, which in turn capacitively couples to the disk and heats a precise area of ​​the disk 112 through Joule heating. One possible NFT 284 for a HAMR write head is a lollipop design having a disk portion and a plug extending between the disk and the MFS. The NFT 284 may be disposed proximate to the main pole 236. The NFT 284 is relatively thermally insulated and absorbs a large portion of the laser power when it is resonant.

[0037] Figure 3A A cross-sectional view of a HAMR write head 300 is shown according to one embodiment. Figure 3B According to one embodiment, Figure 3A FIG. 2 is a cross-sectional view of a portion of the NFT 284 of the HAMR write head 300 . Figure 3C FIG. 4 shows an MFS view of a HAMR write head 300 according to one embodiment. The HAMR write head 300 may be Figure 2 The HAMR write head 230 and the HAMR write head 300 are Figure 1 The magnetic media drive 100 is or is a part of the magnetic media drive.

[0038] The HAMR write head 300 includes a main pole 236, a waveguide 242, and an NFT 284 disposed therebetween. In the HAMR write head 300, a heat shunt 304 is disposed on the NFT 284 recessed from the MFS. A diffusion barrier layer 316 is disposed between the main pole 236 and the heat shunt 304 and in contact with the main pole and the heat shunt. The diffusion barrier layer 316 extends to the MFS. A first insulating layer 312 and / or a cladding material 315 are disposed between the NFT 284 and the waveguide 242. The NFT 284 may be formed on the waveguide 242 without the first insulating layer 312.

[0039] For example, the first insulating layer 312 and the covering material 315 (in Figure 3C) may each individually include one or more of the following: SiO2, Al2O3, silicon oxynitride (SiOxNy), where x and y are each a number greater than or equal to 1, aluminum silicon oxide (Al2O3-SiO2), MgF2, MgO, Ta2O5, TiO2, SiN, and Ge-doped SiO2. Diffusion barrier layer 316 may include one or more of Ru, Rh, Ti, W, Mo, and Pt. Thermal shunt 304 may include one or more of the following: Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN, and NbN. Thermal shunt 304 has a thickness or width 328 of about 50 nm to about 200 nm in the y direction.

[0040] like Figure 3A and Figure 3B As shown in FIG, NFT 284 includes: a first metal layer 306, which is disposed in contact with a first insulating layer 312 adjacent to waveguide 242; a dielectric gap layer 302, which is disposed on the first metal layer 306; and a second metal layer 308, which is disposed on the dielectric gap layer 302 and in contact with the second insulating layer 314. Each of the first metal layer 306, the dielectric gap layer 302, and the second metal layer 308 contacts the thermal shunt 304. Therefore, the first metal layer 306 and the second metal layer 308 are connected through the thermal shunt 304, thereby increasing the field strength during the write operation. In some embodiments, only the first metal layer 306 and the second metal layer 308 contact the thermal shunt 304.

[0041] like Figure 3C As shown in the MFS view of FIG. 3 , the first metal layer 306 has a trapezoidal shape. A smaller portion of the trapezoidal-shaped first metal layer 306 disposed adjacent to the dielectric gap layer 302 has a first width W1 of about 1 nm to about 40 nm, which determines the track width. The second metal layer 308 has a square or rectangular shape and has a second width W2 substantially equal to the first width W1 of the first metal layer 306. However, the second width W2 may be slightly smaller or slightly larger than the first width W1.

[0042] like Figure 3CAs further shown, the coating material 315 is disposed around the NFT 284 at the MFS. The side shield 332 is disposed around the coating material 315 and the NFT 284. The side shield 332 is formed at the side of the NFT 284 to reduce the background light generated around the NFT 284. By reducing the background light, the thermal gradient in the medium recording layer increases, and the surface recording density can be increased. For example, the side shield 332 may include one or more materials selected from the group consisting of: Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN and NbN. The gap G1 between the side shields 332 (i.e., the width of the coating material 315) is about 100nm to about 300nm. The heat sink 334 is disposed on either side of the main pole 236. For example, the heat sink 334 may include Cu or Au. The main pole 236 has a pole width PW of about 50 nm to about 200 nm.

[0043] The first metal layer 306 and the second metal layer 308 may each individually include one or more materials selected from the group consisting of: Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN, and NbN. In some embodiments, the first metal layer 306 and the second metal layer 308 include the same material. In other embodiments, the first metal layer 306 and the second metal layer 308 include different materials. A portion of the first metal layer 306 has a thickness or width 324 of about 1 nm to about 60 nm in the y direction from the dielectric gap layer 302 to the leading edge bevel 330 or bevel of the first metal layer 306. The first metal layer 306 has a total thickness of about 50 nm to about 150 nm in the y direction. The second metal layer 308 has a thickness or width 322 of about 20 nm to about 100 nm in the y direction from the dielectric gap layer 302 to the diffusion barrier layer 316. The first metal layer 306, the dielectric gap layer 302, and the second metal layer 308 each have a length 320 of about 30 nm to about 100 nm in the x-direction from the MFS to the thermal shunt 304. The dielectric gap layer 302 has a thickness or width 318 of about 5 nm to about 30 nm in the y-direction. The dielectric gap layer 302 enhances the field at the MFS during a write operation (shown by circle 326).

[0044] The dielectric gap layer 302 may include one or more of the following: SiO2, Al2O3, silicon oxynitride (SiOxNy), where x and y are each a number greater than or equal to 1, aluminum silicon oxide (Al2O3-SiO2), MgF2, MgO, Ta2O5, TiO2, SiN, and Ge-doped SiO2. Using a lower refractive index material (such as MgF2) for the dielectric gap layer 302 may improve optical efficiency, reduce laser power, and reduce the temperature of the NFT 284. Using a higher refractive index material (such as Ta2O5 and / or TiO2) for the dielectric gap layer 302 may reduce the reflectivity of the NFT 284 and, therefore, reduce mode hopping of the laser. Using a material with a higher thermal conductivity (such as AlN) for the dielectric gap layer 302 reduces the temperature of the NFT 284. Using a material with a higher robustness (such as Ta2O5) for the dielectric gap layer 302 may improve the overall lifetime of the NFT 284.

[0045] FIG. 4A to FIG. 4D The formation of the embodiment according to the present invention is shown FIG. 3A to FIG. 3C Various perspective views of NFT 284. Figure 4A Shown is a first metal layer 306 deposited, a dielectric gap layer 302 deposited on the first metal layer 306, and a second metal layer 308 deposited on the dielectric gap layer 302. As the layers 302, 306, 308 are deposited, a leading edge chamfer 330 or bevel is formed in the first metal layer 306 where the MFS will later be located.

[0046] exist Figure 4B 2 , first metal layer 306, dielectric gap layer 302, and first portions of second metal layer 308 are etched or removed to form NFT 284. The removal of first metal layer 306, dielectric gap layer 302, and first portions of second metal layer 308 causes the remaining portions of layers 302, 306, 308 of NFT 284 to be expanded.

[0047] exist Figure 4C , the first metal layer 306, the dielectric gap layer 302, and the second portion of the second metal layer 308 are etched or removed in the x-direction (i.e., the depth direction) to deposit the thermal shunt 304. After removing the first metal layer 306, the dielectric gap layer 302, and the second portion of the second metal layer 308, the thermal shunt 304 is deposited such that the thermal shunt 304 is recessed from the MFS and contacts each of the first metal layer 306, the dielectric gap layer 302, and the second metal layer 308. The second metal layer 308 and the second portion of the dielectric gap layer 302 are completely removed (in the depth direction) such that the thermal shunt 304 is disposed on a portion of the first metal layer, as shown in FIG. Figure 3BThe heat shunt 304 is rectangular in shape and thus has a different shape from the expanded first metal layer 306 , the expanded dielectric gap layer 302 , and the expanded second metal layer 308 .

[0048] exist Figure 4D , a third portion of first metal layer 306, dielectric gap layer 302, and second metal layer 308 is removed to define the MFS of NFT 284. The removed third portion is the frontmost portion, and the removal of the third portion further defines a length 320 of first metal layer 306, dielectric gap layer 302, and second metal layer 308 in the x-direction.

[0049] FIG. 5A to FIG. 5E Shown according to various embodiments FIG. 3A to FIG. 3C The HAMR write head 300 through Figure 3A Cross-sectional view along line AA in FIG. FIG. 5A to FIG. 5E Aspects of the embodiments may be used in combination with each other.

[0050] exist Figure 5A In the embodiment of the present invention, the first metal layer 306 has a thickness T1 in the y direction and has a side wall angle θ1 of about 0 degrees to about 50 degrees. The first metal layer 306 has a trapezoidal shape, wherein a corner 501 of the first metal layer 306 disposed adjacent to the waveguide 242 is sharp. In order to achieve a high thermal gradient in the recording layer, it is preferred to make the side wall angle θ1 of the first metal layer 306 at the smaller end of the range. However, if the angle θ1 is too small, the optical efficiency of the NFT 284 is reduced and the temperature of the NFT 284 is increased. Therefore, for reliability, it is preferred to make the angle θ1 between about 10 degrees and about 30 degrees.

[0051] like Figure 5A As shown in , the second metal layer 308 has a second sidewall angle θ2, which can be greater than 0 degrees or negative. By making the angle θ greater than 0 degrees, such as about 5 degrees to about 20 degrees, the optical field is more confined in the gap 302, and a smaller optical spot can be achieved.

[0052] exist Figure 5B In an embodiment of the present invention, the sidewalls of the first metal layer 306 and the second metal layer 308 are curved so that the first metal layer 306, the dielectric gap layer 302 and the second metal layer 308 collectively have a generally hourglass shape, wherein the dielectric gap layer 302 has the narrowest width in the z-direction. However, the first metal layer 306 still has a sharp corner 305 at the bottom, which may cause background light. By reducing the wall angle (θ1c) at the base, the background light can be reduced and the thermal gradient in the recording layer can be increased.

[0053] For example, in Figure 5B, the first metal layer 306 may have the following profile: a portion of the first metal layer 306 disposed adjacent to the dielectric gap layer 302 has an angle θ1a equal to about 0 degrees to about 10 degrees and a thickness T1a equal to about 10 nm to about 30 nm in the y direction; a middle portion of the first metal layer 306 disposed between the corner 305 and the dielectric gap layer 302 has an angle θ1b of about 20 degrees to about 40 degrees and a thickness T1b of about 30 nm to about 70 nm in the y direction; and a portion of the first metal layer 306 disposed near the sharp corner 305 has an angle θ1c of about 0 degrees to about 10 degrees and a thickness T1c of about 5 nm to about 30 nm in the y direction.

[0054] exist Figure 5B In the embodiment of the present invention, the wall angle of the second metal layer 308 can also be changed in multiple steps. For example, the second metal layer 308 can have the following profile: the portion of the second metal layer 308 disposed adjacent to the dielectric gap layer has an angle θ2a of about 0 degrees to about 10 degrees and a thickness T2a of about 10 nm to about 20 nm in the y direction; and the portion of the second metal layer 308 disposed adjacent to the diffusion barrier layer 316 has an angle θ1b of about 20 degrees to about 40 degrees and a thickness T2b of about 20 nm to about 30 nm in the y direction.

[0055] exist Figure 5C In an embodiment, the wall angles of the first metal layer 306 and / or the second metal layer 308 may change gradually so that the NFT 284 has an overall curved profile or hourglass shape.

[0056] exist Figure 5D In an embodiment of the present invention, the first metal layer 306 includes a narrow top portion 306a and a wide bottom portion 306b disposed adjacent to the dielectric gap layer 302. Each portion 306a, 306b can be fabricated separately. The first metal layer 306 can have the following profile: the first width W1a of the narrow portion 306a in the z direction is equal to about 1 nm to about 40 nm, the angle θ1a of the narrow portion 306a is about 0 degrees to about 30 degrees, and the thickness T1a of the narrow portion 306a in the y direction is about 10 nm to about 70 nm; and the width W1b of the wide portion 306b in the z direction is about 50 nm to about 150 nm, the angle θ1b of the wide portion 306b is about 0 degrees to about 50 degrees, and the thickness T1b of the wide portion 306b in the y direction is about 20 nm to about 70 nm.

[0057] When the first metal layer 306 comprises a narrow top portion 306a and a wide bottom portion 306b, it is preferred to round the corners 505 of each portion 306a, 306b to reduce light scattering at the corners and improve thermal gradients in the recording layer, such as Figure 5E as shown in .

[0058] FIG. 6A to FIG. 6C Shown according to various embodiments FIG. 3A to FIG. 3C The HAMR write head 300 through Figure 3A 2. A cross-sectional view of line AA in FIG. 2, wherein NFT 284 includes an additional metal sublayer. FIG. 6A to FIG. 6C The various aspects of the embodiments can be used in combination with each other. In addition, FIG. 6A to FIG. 6C Aspects of the embodiments may be related to FIG. 5A to FIG. 5E used in combination with the implementation scheme of .

[0059] exist Fig. 6A In the embodiment of the present invention, the first metal layer 306 includes a first metal sublayer 606a and a second metal sublayer 606b, the second metal sublayer being disposed between the first metal sublayer 606a and the dielectric gap layer 302. The first metal sublayer 606a and the second metal sublayer 606b may include different materials. The first metal sublayer 606a may include the above FIG. 3A to FIG. 3C Any material mentioned in the embodiments.

[0060] A second material sublayer 606b is utilized on top of the first metal sublayer 606a to improve the robustness of the NFT 284. When a strong optical near field is generated at the dielectric gap layer 302, the temperature of the NFT 284 is highest at the top of the first metal layer 306 (i.e., near the dielectric gap layer 302). The temperature of the NFT 284 decreases with the distance from the top of the first metal layer 306. By using a robust material on top of the first metal layer 306, the reliability of the NFT 284 can be improved. For example, one or more of the following materials can be used for the material of the second metal sublayer 606b: Rh, Ir, Cu, Ag, Al, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN, NbN, and alloy materials composed of two or more of Au, Rh, Ir, Cu, Ag, Al, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, and W. The thickness TM1a of the second material sublayer 606b is about 5 nm to about 50 nm; however, depending on the material, the thickness TM1a may be smaller or larger.

[0061] Figure 6B An implementation similar to Fig. 6A implementation scheme; however, Figure 6BThe embodiment also includes a third metal sublayer 606c disposed between the first metal sublayer 606a and the second metal sublayer 606b. The robust material of the second metal sublayer 606b tends to have higher optical absorption, which increases the temperature of the NFT 284. By using a less robust material with lower optical loss in the region of the dielectric gap layer 302 away from the third material sublayer 606c, the robustness can be improved without increasing the temperature too much. For example, the second metal sublayer 606b can include Rh with a thickness TM1a of about 5nm to about 20nm in the y direction, and the third metal sublayer 606c can include AuRh with a thickness TM1b of about 10nm to about 50nm in the y direction. However, any other material combination can be used, and the optimal thickness depends on the materials. It is also noted that more than two different material sublayers, such as 3 or 4 material sublayers, can be included in the first metal layer 306.

[0062] Figure 6C An implementation similar to Figure 6B implementation scheme; however, in Figure 6C In the embodiment of the present invention, the second metal layer 308 further includes a plurality of sublayers 608a, 608b including different materials. As shown in the figure, the second metal layer 308 includes a first metal sublayer 608a and a second metal sublayer 608b, wherein the second metal sublayer is disposed between the first metal sublayer 608a and the dielectric gap layer 302. The first metal sublayer 608a may include the above FIG. 3A to FIG. 3C The second metal sublayer 608b may include one or more materials selected from the group consisting of: Rh, Ir, Cu, Ag, Al, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN, NbN, and an alloy material consisting of two or more of Au, Rh, Ir, Cu, Ag, Al, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, and W, and the thickness of the second metal sublayer in the y direction is about 5 nm to about 20 nm.

[0063] 7A to 7C A method of manufacturing a device further comprising one or more adhesive layers according to various embodiments is shown. FIG. 3A to FIG. 3C The HAMR write head 300 through Figure 3A Cross-sectional view along line AA in FIG. 7A to 7C The various aspects of the embodiments can be used in combination with each other. In addition, 7A to 7C Aspects of the embodiments may be related to FIG. 5A to FIG. 5E and / or FIG. 6A to FIG. 6C used in combination with the implementation scheme of .

[0064] In some cases, such as 7A to 7C 2, it is beneficial to deposit a first adhesion layer 840 and a second adhesion layer 842 between the first metal layer 306 and the second metal layer 308 and the dielectric gap layer 302, and to deposit a third adhesion layer 844 and a fourth adhesion layer 846 between the first metal layer 306 and the second metal layer 308 and the cladding layer 315 to increase the bonding strength between the NFT 284, the dielectric gap layer 302, and the cladding layer 315 surrounding the NFT 284. If the bonding strength is weak, the NFT 284 may be deformed when heated during recording. Each adhesion layer 840-846 may individually include one or more materials selected from the group consisting of: Rh, Cr, Ti, Ta, Zr, Ir, W, Al, Ru, Pd, Pt, Rh2O3, Cr2O3, TiO2, Ta2O5, ZrO2, IrO2, HfO2, Y2O3, In-doped tin oxide (ITO), Al-doped ZnO (AZO), and Ga-doped ZnO (GZO). Each adhesion layer 840-846 may individually include multiple layers of different materials. Depending on the material of the adhesion layer 840-846, the thickness of each individual adhesion layer 840-846 in the y direction (for 840 and 842) or the z direction (for 844 and 846) is between about 2nm and about 5nm.

[0065] exist Fig. 7A In the embodiment of FIG. 8 , an additional adhesion layer 841 is shown deposited on the side of the dielectric layer 302 adjacent to the cladding layer 315. However, if the adhesion layer 841 is not transparent, it is preferred not to include the adhesion layer 841 on the side of the dielectric gap layer 302 because the optical near field generated in the dielectric gap layer 302 is absorbed by the adhesion layer 284, causing the NFT 284 temperature to increase.

[0066] exist Figure 7B In an embodiment, the third adhesion layer 844 is first deposited on one side of the first metal layer 306 using angled deposition, and then the fourth adhesion layer 846 can be deposited on the second metal layer 308, the dielectric gap layer 302, and the third adhesion layer 844. The third adhesion layer 844 can be a metal adhesion layer including one or more materials selected from the group consisting of: Rh, Cr, Ti, Ta, Zr, Ir, W, Al, Ru, Pd, and Pt, and the fourth adhesion layer 846 can include one or more dielectric materials selected from the group consisting of: Cr2O3, TiO2, Ta2O5, ZrO2, IrO2, HfO2, Y2O3, In-doped tin oxide (ITO), Al-doped ZnO (AZO), and Ga-doped ZnO (GZO).

[0067] Because the first metal layer 306 is heated more than the second metal layer 308 during recording, the first metal layer 306 has a higher temperature. Therefore, the adhesion layers 840, 844 disposed on the first metal layer 306 need to have a stronger bonding strength than the adhesion layers 842, 846 disposed on the second metal layer 308. The metal adhesion layer 844 generally has a higher bonding strength and a higher optical absorption, which increases the temperature of the NFT 284. By depositing the metal adhesion layer 844 only on the first metal layer 306 and depositing the dielectric adhesion layer 846 on other locations, the temperature rise of the NFT 284 can be reduced (for example, reducing the light absorption on one side of the dielectric layer 302).

[0068] Figure 7C An implementation similar to Figure 7B implementation scheme; however, Figure 7C The first metal layer 306 of the embodiment further includes a first metal sublayer 606a and a second metal sublayer 606b. When the first metal layer 306 includes the second metal sublayer 606b having high stability, the third adhesion layer 844 may be deposited only on the first metal sublayer 606a.

[0069] Fig. 8A A cross-sectional view of a HAMR write head 800 is shown according to another embodiment. Figure 8B According to one embodiment, Fig. 8A A cross-sectional view of a portion of the NFT 284 of the HAMR write head 800 along line AA. The HAMR write head 800 may be Figure 2 The HAMR write head 230 and the HAMR write head 800 are Figure 1 The magnetic media drive 100 is or is a part of the magnetic media drive. FIG. 8A to FIG. 8B Aspects of the embodiments may be related to FIG. 5A to FIG. 5E , FIG. 6A to FIG. 6C and / or 7A to 7C used in combination with the implementation scheme of .

[0070] HAMR write head 800 is similar to FIG. 3A to FIG. 3C HAMR write head 300; however, HAMR write head 800 includes a third metal layer 850 disposed between second metal layer 308 and diffusion barrier layer 316. Third metal layer 850 extends over heat diverter 304 in the x-direction. By adding third metal layer 850, the temperature rise at second metal layer 306 can be reduced. Third metal layer 850 can include one or more materials selected from the group consisting of: Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN, and NbN. Figure 8B As shown in , the thickness T2 of the second metal layer 308 is about 5 nm to about 50 nm, and the thickness T3 of the third metal layer 850 is about 5 nm to about 50 nm. Figure 8B As further shown, the width of the third metal layer 850 in the z-direction is greater than the widths of the first metal layer 306 , the second metal layer 308 , and the dielectric gap layer 302 .

[0071] 9A to 9C FIG. 1 shows a dielectric interlayer 302 having an inclined dielectric interlayer 302 according to various embodiments. FIG. 3A to FIG. 3C The HAMR write head 300 through Figure 3A Cross-sectional view along line AA in FIG. 9A to 9C The various aspects of the embodiments can be used in combination with each other. In addition, 9A to 9C Aspects of the embodiments may be related to FIG. 5A to FIG. 5E , FIG. 6A to FIG. 6C , 7A to 7C and / or 8A to Figure 8B used in combination with the implementation scheme of .

[0072] exist Fig.9A In an embodiment, dielectric gap layer 302 and first metal layer 306 are tilted. For example, tilt angle θa may be about 5 degrees to about 30 degrees. By tilting dielectric gap layer 302 and / or first metal layer 306, heat flow from first metal layer 306 to heat shunt 304 is increased and the temperature of NFT 284 may be reduced.

[0073] exist Fig. 9B In an embodiment of the present invention, the dielectric gap layer 302 and the first metal layer 306 are tilted in multiple steps. For example, the angle θb of the portion of the dielectric gap layer 302 and / or the first metal layer 306 disposed adjacent to the heat shunt 304 is about 5 degrees to about 20 degrees smaller than the angle θa of the portion disposed adjacent to the MFS, or the angle θb may be about 5 degrees to about 20 degrees greater than the angle θa.

[0074] exist Fig. 9C In an embodiment of the present invention, the top surfaces of the second metal layer 308 and the diffusion barrier layer 316 are inclined relative to the dielectric gap layer 302 .

[0075] FIG. 10A to FIG. 10C Shown according to various embodiments FIG. 3A to FIG. 3C The HAMR write head 300 through Figure 3A Cross-sectional view along line AA in FIG. FIG. 10A to FIG. 10C The various aspects of the embodiments can be used in combination with each other. In addition, FIG. 10A to FIG. 10C Aspects of the embodiments may be related to FIG. 5A to FIG. 5E , FIG. 6A to FIG. 6C , 7A to 7C , 8A to Figure 8B and / or 9A to Fig. 9C used in combination with the implementation scheme of .

[0076] exist Fig. 10A In the embodiment of the present invention, the first sublayer 660a of the first metal layer 306 includes a leading edge bevel 1001 having an angle θ1 of about 5 degrees to about 45 degrees manufactured in the wafer process. The leading edge bevel 1001 prevents the recording medium from being heated by the background light generated at the bottom of the first metal layer 306 and further increases the thermal gradient in the recording medium (i.e., improves the areal recording density). The first sublayer contacts Fig. 10A The MFS in the embodiment of the present invention is shown in FIG. 1001 , but it can be recessed from the MSF by about 5 nm to about 30 nm to further increase the thermal gradient, as shown by the dashed line 1001 b.

[0077] exist Fig. 10B In the embodiment of the present invention, instead of using the leading edge chamfer 1001, the first sublayer 606a and the second metal layer 308 of the first metal layer 306 may each be individually recessed from the MFS by etching portions of the first sublayer 660a and the second metal layer 308 disposed at the MFS using ion milling during slider manufacturing. The first sublayer 606a and the second metal layer 308 are recessed to a depth D of about 5 nm to about 15 nm. During the ion milling process, the etching rate of the second metal layer 308 including the hard material may be slower than the etching rate of the first metal layer 306 including the soft material.

[0078] exist Fig. 10C In the embodiment of the present invention, the second sublayer 608b of the second metal layer 308 is also recessed from the MFS by a depth D of about 5 nm to about 15 nm. The recessing of the second sublayer 608b of the second metal layer 308 can reduce damage caused by interaction with the dielectric surface.

[0079] By having the NFT include a dielectric gap layer disposed between a first metal layer and a second metal layer, wherein the first metal layer, the dielectric gap layer, and the second metal layer are all in contact with a thermal shunt, and the first metal layer and the second metal layer are connected through the thermal shunt, this increases the field strength during a write operation. In addition, the dielectric gap layer enhances the field at the MFS during a write operation while improving optical efficiency, reducing laser power, reducing the temperature of the NFT, reducing the reflectivity of the NFT, reducing mode hopping of the laser, and / or improving the overall life of the NFT.

[0080] In one embodiment, a magnetic recording head includes: a main pole; a waveguide disposed adjacent to the main pole; a heat shunt disposed between the main pole and the waveguide, the heat shunt being recessed from a medium facing surface (MFS); and a near field transducer (NFT) coupled between the main pole and the waveguide at the MFS, the NFT including: a first metal layer disposed adjacent to the waveguide; a dielectric gap layer disposed on and in contact with the first metal layer; and a second metal layer disposed on and in contact with the dielectric gap layer, wherein the first metal layer and the second metal layer are each disposed in contact with the heat shunt.

[0081] The magnetic recording head also includes: a first insulating layer, the first insulating layer is arranged between the first metal layer and the waveguide and contacts the first metal layer and the waveguide; and a second insulating layer, the second insulating layer is arranged between the main pole and the second metal layer, and the second insulating layer is arranged to contact the second metal layer. The dielectric gap layer includes one or more materials selected from the group consisting of: SiO2, Al2O3, silicon oxynitride (SiOxNy), where x and y are each a number greater than or equal to 1, aluminum silicon oxide (Al2O3-SiO2), MgF2, MgO, Ta2O5, TiO2, SiN and Ge-doped SiO2. The first metal layer includes a different material from the second metal layer. The first metal layer and the second metal layer include the same material. The first metal layer and the second metal layer each individually include one or more materials selected from the group consisting of: Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN and NbN.

[0082] The width of the dielectric layer is smaller than the width of the first metal layer and the second metal layer. The first metal layer includes a first layer and a second layer, and the first layer and the second layer include different materials. The first layer of the first metal layer is arranged adjacent to the waveguide, and wherein the first layer of the first metal layer is recessed from the MFS. The first layer of the first metal layer is inclined at an angle of about 5 degrees to about 45 degrees relative to the MFS. The first layer of the first metal layer has a leading edge slope at an angle of about 5 degrees to about 45 degrees. The second layer includes a first layer and a second layer, and the second layer is arranged adjacent to the main pole. The second layer of the second metal layer is recessed from the MFS. The dielectric gap layer and the first metal layer are inclined at an angle of about 5 degrees to about 30 degrees relative to the MFS. The second metal layer is inclined at an angle of about 5 degrees to about 30 degrees relative to the MFS. A magnetic recording device includes the magnetic recording head.

[0083] In another embodiment, a magnetic recording head includes: a main pole; a waveguide disposed adjacent to the main pole; a heat shunt disposed between the main pole and the waveguide, the heat shunt being recessed from a medium facing surface (MFS); a first insulating layer disposed between the waveguide and the heat shunt; a second insulating layer disposed between the main pole and the heat shunt at the MFS; and a near field transducer (NFT) coupled between the first insulating layer and the second insulating layer at the MFS, the NFT including: a first metal layer disposed in contact with the first insulating layer; a dielectric gap layer disposed on and in contact with the first metal layer; and a second metal layer disposed on and in contact with the dielectric gap layer and the second insulating layer, wherein the first metal layer, the dielectric gap layer, and the second metal layer are each disposed in contact with the heat shunt.

[0084] The dielectric gap layer has a thickness of about 5 nm to about 30 nm. The first metal layer has a thickness of about 50 nm to about 150 nm, and the second metal layer has a thickness of about 20 nm to about 100 nm. The thermal shunt includes a material selected from the group consisting of: Au, Rh, Ir, Cu, Ag, Al, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, AlN alloy and TiN alloy, and the first metal layer and the second metal layer each individually include one or more materials selected from the group consisting of: Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN and NbN. The dielectric gap layer includes one or more materials selected from the group consisting of SiO2, Al2O3, silicon oxynitride (SiOxNy), where x and y are each a number greater than or equal to 1, aluminum silicon oxide (Al2O3-SiO2), MgF2, MgO, Ta2O5, TiO2, SiN, and Ge-doped SiO2, and wherein the first insulating layer and the second insulating layer each individually include SiO2 or Al2O3. The NFT has an expanded shape, and wherein the heat shunt has a shape different from the NFT.

[0085] The first adhesion layer is disposed between the first metal layer and the dielectric gap layer, and wherein the second adhesion layer is disposed between the second metal layer and the dielectric gap layer. The third adhesion layer is disposed on the sidewall of the first metal layer and on the sidewall of the second metal layer. The magnetic recording head also includes a third metal layer, which is disposed between the second metal layer and the main pole, and the third metal layer is disposed in contact with the heat shunt. The width of the third metal layer at the MFS is greater than the width of the first metal layer and the second metal layer. The third metal layer includes one or more materials selected from the group consisting of the following items: Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN and NbN. The thickness of the third metal layer is less than the thickness of the first metal layer and the second metal layer. The first metal layer includes a first portion having a first width and a second portion having a second width less than the first width. The first width is about 50nm to about 150nm, and wherein the second width is about 1nm to about 40nm. A magnetic recording device includes the magnetic recording head.

[0086] In yet another embodiment, a method of a magnetic recording head includes forming a near field transducer (NFT) by depositing a first metal layer, depositing a dielectric gap layer on and in contact with the first metal layer, and depositing a second metal layer on and in contact with the dielectric gap layer, removing a portion of each of the first metal layer, the dielectric gap layer, and the second metal layer, wherein the removed portion of each of the first metal layer, the dielectric gap layer, and the second metal layer is at a position recessed from a surface facing a medium; and depositing a heat shunt in the removed portion of each of the first metal layer, the dielectric gap layer, and the second metal layer, such that the heat shunt is disposed in contact with the first metal layer, the dielectric gap layer, and the second metal layer.

[0087] The method also includes removing an additional portion of each of the first metal layer, the dielectric gap layer and the second metal layer so that the remaining portion of each of the first metal layer, the dielectric gap layer and the second metal layer is in an expanded shape. The thermal shunt has a shape different from the NFT. The dielectric gap layer includes one or more materials selected from the group consisting of SiO2, Al2O3, silicon oxynitride (SiOxNy), where x and y are each a number greater than or equal to 1, aluminum silicon oxide (Al2O3-SiO2), MgF2, MgO, Ta2O5, TiO2, SiN and Ge-doped SiO2, and wherein the first metal layer and the second metal layer each individually include one or more materials selected from the group consisting of Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN and NbN. The dielectric gap layer and the first metal layer are inclined at an angle of about 5 degrees to about 30 degrees relative to the MFS. The first metal layer and the second metal layer each individually have a trapezoidal shape. The first metal layer includes one or more rounded corners.

[0088] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be envisaged without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the appended claims.

Claims

1. A magnetic recording head, comprising: main pole; a waveguide disposed adjacent to the main pole; a heat shunt disposed between the main pole and the waveguide, the heat shunt being recessed from a medium facing surface (MFS); and a near field transducer (NFT) coupled between the main pole and the waveguide at the MFS, the NFT comprising: a first metal layer disposed adjacent to the waveguide; a dielectric gap layer disposed on and in contact with the first metal layer; and A second metal layer is disposed on and in contact with the dielectric gap layer, wherein the first metal layer and the second metal layer are each disposed in contact with the heat shunt.

2. The magnetic recording head according to claim 1, further comprising: a first insulating layer disposed between the first metal layer and the waveguide and in contact with the first metal layer and the waveguide; and A second insulating layer is provided between the main electrode and the second metal layer, and the second insulating layer is provided to contact the second metal layer.

3. The magnetic recording head of claim 1 , wherein the dielectric gap layer comprises one or more materials selected from the group consisting of SiO 2 , Al 2 O 3 , silicon oxynitride (SiO x N y ), wherein x and y are each a number greater than or equal to 1, aluminum silicon oxide (Al 2 O 3 -SiO 2 ), MgF 2 , MgO, Ta 2 O 5 , TiO 2 , SiN, and Ge-doped SiO 2 .

4. The magnetic recording head of claim 1, wherein the first metal layer comprises a different material than the second metal layer.

5. The magnetic recording head of claim 1, wherein the first metal layer and the second metal layer comprise the same material.

6. The magnetic recording head of claim 1 , wherein the first metal layer and the second metal layer each individually comprise one or more materials selected from the group consisting of Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN, and NbN.

7. The magnetic recording head of claim 1, wherein a width of the dielectric layer is smaller than widths of the first metal layer and the second metal layer.

8. The magnetic recording head of claim 1, wherein the first metal layer comprises a first sublayer and a second sublayer, the first sublayer and the second sublayer comprising different materials.

9. The magnetic recording head of claim 8, wherein the first sublayer of the first metal layer is disposed adjacent to the waveguide, and wherein the first sublayer of the first metal layer is recessed from the MFS.

10. The magnetic recording head of claim 9, wherein the first sublayer of the first metal layer has a leading edge bevel at an angle of about 5 degrees to about 45 degrees. 11 . The magnetic recording head of claim 9 , wherein the first sublayer of the first metal layer is inclined at an angle of about 5 degrees to about 45 degrees relative to the MFS.

12. The magnetic recording head of claim 8, wherein the second sub-layer comprises a first sub-layer and a second sub-layer, the second sub-layer being disposed adjacent to the main pole.

13. The magnetic recording head of claim 12, wherein the second sublayer of the second metal layer is recessed from the MFS.

14. The magnetic recording head of claim 1, wherein the dielectric gap layer and the first metal layer are tilted at an angle of about 5 degrees to about 30 degrees relative to the MFS. 15 . The magnetic recording head of claim 14 , wherein the second metal layer is inclined at an angle of about 5 degrees to about 30 degrees relative to the MFS. 16 . A magnetic recording device comprising the magnetic recording head according to claim 1 .

17. A magnetic recording head, comprising: main pole; a waveguide disposed adjacent to the main pole; a heat shunt disposed between the main pole and the waveguide, the heat shunt being recessed from a medium facing surface (MFS); a first insulating layer disposed between the waveguide and the heat diverter; a second insulating layer disposed between the main pole and the thermal shunt at the MFS; and a near field transducer (NFT), the near field transducer coupled between the first insulating layer and the second insulating layer at the MFS, the NFT comprising: a first metal layer, the first metal layer being arranged to contact the first insulating layer; a dielectric gap layer disposed on the first metal layer; and A second metal layer is disposed on the dielectric gap layer and the second insulating layer, wherein the first metal layer, the dielectric gap layer and the second metal layer are each disposed in contact with the heat shunt.

18. The magnetic recording head of claim 17, wherein the dielectric gap layer has a thickness of about 5 nm to about 30 nm.

19. The magnetic recording head of claim 17, wherein the first metal layer has a thickness of about 50 nm to about 150 nm, and wherein the second metal layer has a thickness of about 20 nm to about 100 nm.

20. The magnetic recording head of claim 17, wherein the first metal layer and the second metal layer each individually comprise one or more materials selected from the group consisting of Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN, and NbN.

21. The magnetic recording head of claim 17, wherein the dielectric gap layer comprises one or more materials selected from the group consisting of SiO2, Al2O3, silicon oxynitride (SiOxNy), where x and y are each a number greater than or equal to 1, aluminum silicon oxide (Al2O3-SiO2), MgF2, MgO, Ta2O5, TiO2, SiN, and Ge-doped SiO2, and wherein the first insulating layer and the second insulating layer each individually comprise SiO2 or Al2O3.

22. The magnetic recording head of claim 17, wherein the NFT has an expanded shape, and wherein the heat diverter has a different shape than the NFT.

23. The magnetic recording head of claim 17, wherein a first adhesion layer is disposed between the first metal layer and the dielectric gap layer, and wherein a second adhesion layer is disposed between the second metal layer and the dielectric gap layer.

24. The magnetic recording head of claim 17, wherein a third adhesion layer is disposed on a sidewall of the first metal layer and on a sidewall of the second metal layer.

25. The magnetic recording head of claim 17, further comprising a third metal layer disposed between the second metal layer and the main pole, the third metal layer being disposed in contact with the heat shunt. 26 . The magnetic recording head of claim 25 , wherein a width of the third metal layer at the MFS is greater than widths of the first metal layer and the second metal layer.

27. The magnetic recording head of claim 25, wherein the third metal layer comprises one or more materials selected from the group consisting of Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN, and NbN.

28. The magnetic recording head of claim 25, wherein the thickness of the third metal layer is smaller than the thickness of the first metal layer and the second metal layer.

29. The magnetic recording head of claim 17, wherein the first metal layer includes a first portion having a first width and a second portion having a second width smaller than the first width.

30. The magnetic recording head of claim 29, wherein the first width is from about 50 nm to about 150 nm, and wherein the second width is from about 1 nm to about 40 nm.

31. The magnetic recording head of claim 17, wherein the heat shunt comprises a material selected from the group consisting of Au, Rh, Ir, Cu, Ag, Al, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, AlN alloys, and TiN alloys.

32. A magnetic recording device comprising the magnetic recording head according to claim 17.

33. A method of a magnetic recording head, the method comprising: forming a near field transducer (NFT) by depositing a first metal layer, depositing a dielectric gap layer on and in contact with the first metal layer, and depositing a second metal layer on and in contact with the dielectric gap layer; removing a portion of each of the first metal layer, the dielectric gap layer, and a second metal layer, wherein the removed portion of each of the first metal layer, the dielectric gap layer, and the second metal layer is at a location recessed from a dielectric-facing surface; as well as A heat shunt is deposited in the removed portion of each of the first metal layer, the dielectric gap layer, and the second metal layer such that the heat shunt is disposed in contact with the first metal layer, the dielectric gap layer, and the second metal layer.

34. The method of claim 33, further comprising: Additional portions of each of the first metal layer, the dielectric gap layer, and the second metal layer are removed such that a remaining portion of each of the first metal layer, the dielectric gap layer, and the second metal layer is in an expanded shape.

35. The method of claim 33, wherein the heat diverter has a different shape than the NFT.

36. The method of claim 33, wherein the dielectric gap layer comprises one or more materials selected from the group consisting of SiO2, Al2O3, silicon oxynitride (SiOxNy), wherein x and y are each a number greater than or equal to 1, aluminum silicon oxide (Al2O3-SiO2), MgF2, MgO, Ta2O5, TiO2, SiN, and Ge-doped SiO2, and wherein the first metal layer and the second metal layer each individually comprise one or more materials selected from the group consisting of Au, Ag, Cu, Al, Rh, Ir, Ru, Cr, Pt, Ti, Fe, Co, Ni, Pd, Be, Mo, W, ZrN, TiN, HfN, and NbN.

37. The method of claim 33, wherein the dielectric gap layer and the first metal layer are inclined at an angle of about 5 degrees to about 30 degrees relative to the MFS.

38. The method of claim 33, wherein the first metal layer and the second metal layer each individually have a trapezoidal shape.

39. The method of claim 33, wherein the first metal layer comprises one or more rounded corners.

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