Method of coating chamber components

Abstract

Embodiments disclosed herein include a component support for coating a chamber component by chemical vapor deposition (CVD). The component support includes a contact lever configured to contact the chamber component at a fixed point located on a back side of the chamber component. The component support is configured to support chamber components in the processing volume while contact of the chamber components is minimized. When the chamber component is mounted, the backside fixation point reduces exposure of the fixation point to the reactant gas.

Description

Technical Field

[0001] Embodiments of the present disclosure generally relate to coating chamber components with carbon-containing materials in a chemical vapor deposition (CVD) chamber, and supports for holding chamber components during such processes. Background Art

[0002] Components forming a processing chamber used during the manufacture of semiconductor substrates may undergo a variety of processing steps in order to be ready for use. In some processes, chamber components (such as susceptors and preheat rings) undergo a CVD process to coat the components with the desired material. However, in a CVD process, it can be challenging to effectively coat every location of the component, which can adversely affect the useful life of the component and can also create weak points on the body of the component.

[0003] Therefore, there is a need for improved methods for coating chamber components using CVD processes. Summary of the invention

[0004] In one embodiment, a method for coating a chamber component is provided. The method includes positioning the chamber component on a component support in a chamber body. One or more contact rods extend from the component support to contact a back side of the chamber component only at one or more fixed points, and the one or more fixed points are defined by one or more grooves formed in the back side of the chamber component. The method also includes coating the chamber component with a carbonaceous material while the chamber component is supported on the component support. The back side of the chamber component faces a bottom surface of the chamber body.

[0005] In another embodiment, a method for coating a chamber component is provided. The method includes positioning the chamber component on a component support in a chamber body. One or more contact rods extend from a support rod of the component support to contact the chamber component at one or more fixed points. The chamber component includes an inner portion forming a ring and an outer portion surrounding the inner portion. The inner portion extends away from the outer portion to form a flange, so that one or more fixed points are located at a corner formed on the chamber component, and the corner is defined as the intersection of the flange and the inner portion. The method also includes coating the chamber component with a carbonaceous material while the chamber component is supported on the component support. The chamber component faces the bottom surface of the chamber body.

[0006] In yet another embodiment, a semiconductor processing chamber component support is provided. The semiconductor processing chamber component support includes a base, one or more legs coupled to the base, and the legs extending away from the top surface of the base. The semiconductor processing chamber component support also includes a support rod coupled to the base, and the support rod extends away from the top surface of the base. The semiconductor processing chamber component support also includes a support rod coupled to the legs and a contact rod coupled to the support rod and a side surface of the support rod. Each contact rod includes a contact point configured to contact the back side of the chamber component. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to be able to understand in detail the manner in which the above-mentioned features of the present disclosure are achieved, a more specific description of the present disclosure briefly summarized above can be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate exemplary embodiments and are therefore not to be considered as limiting the scope thereof, and other equally effective embodiments may be allowed.

[0008] Figure 1 is a schematic cross-sectional view of a chamber component coating (CCC) chamber having a first example of a component support according to embodiments described herein.

[0009] Figure 2 is a schematic cross-sectional view of a chamber component coating (CCC) chamber having a second example of a component support according to embodiments described herein.

[0010] Figure 3 is a rear view of a base according to embodiments described herein.

[0011] Figure 4A is a rear view of a preheat ring according to embodiments described herein.

[0012] Figure 4B is an isometric view of a portion of a preheat ring according to embodiments described herein.

[0013] Figure 5A is a schematic side view of one example of a component support of a support base according to embodiments described herein.

[0014] Figure 5B is a schematic perspective view of one example of a component support according to embodiments described herein.

[0015] Figure 6 is a flow chart of a method of supporting chamber components in a chamber component coating (CCC) chamber during a coating process according to embodiments described herein.

[0016] Fig. 7Ais a schematic perspective view of another example of a part support supporting a preheat ring according to embodiments described herein.

[0017] Figure 7B is a schematic top view of another example of a component support according to embodiments described herein.

[0018] Figure 8 is a flow chart of a method of supporting chamber components in a chamber component coating (CCC) chamber during a coating process according to embodiments described herein.

[0019] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0020] Embodiments of the present disclosure generally relate to a method for coating chamber components in chemical vapor deposition (CVD), and to a component support suitable for supporting chamber components while coating chamber components. After undergoing a CVD coating process, chamber components (such as susceptors, preheat rings, and other chamber components) may have a thinner coating at locations that contact fixtures (such as component supports). Locations with thinner coatings are more susceptible to stress than other locations of the chamber components. When chamber components are used in substrate manufacturing (such as in a CVD processing chamber), reactive gases may interact with areas of thinner coatings, thereby damaging the coating and adversely affecting the service life of the chamber components. The component support described herein is advantageously configured to have a fixed point that supports the chamber component while being coated, the fixed point contacting the chamber component at a location of the chamber component, the location being selected to reduce the risk of component failure at the location that contacts the chamber component.

[0021] Figure 1 1 is a schematic cross-sectional view of a first example of a chamber component coating (CCC) chamber having a component support according to embodiments described herein. The CCC chamber 100 is configured to apply a coating of material to chamber components, such as chamber components used in semiconductor processing chambers, such as chemical vapor deposition (CVD) chambers, physical vapor deposition (PVD) chambers, plasma and vacuum processing chambers, and ion implantation chambers, etc. Figure 22 is a schematic cross-sectional view of a second example of a chamber component coating (CCC) chamber having a component support according to embodiments described herein. The CCC chamber 100 can be used with either of the component supports 105, 205. As shown, the CCC chamber 100 is configured to perform a CVD process, although in some embodiments, the CCC chamber 100 can be configured to perform another processing operation, such as a processing operation involving plasma or another deposition process. The CCC chamber 100 is configured to support one or more chamber components so that the components can receive a coating via a deposition process such as CVD.

[0022] The CCC chamber 100 includes a chamber body 102 and a lid 106 coupled to the chamber body 102. The CCC chamber 100 includes one of a component support 105, 205 disposed therein. The component support 105, 205 is made of a graphite material or a silicon carbide material. In one example, the component support 105, 205 is coated with a carbon-containing material such as silicon carbide (SiC). The chamber body 102 and the chamber lid 106 enclose the component support 105 in a processing volume 120 defined within the chamber body 102. An exhaust port 156 is disposed through the chamber body 102. The exhaust port 156 is connected to a vacuum pump 157. The vacuum pump 157 removes excess processing gas or byproducts from the processing volume 120 via the exhaust port 156 during and / or after processing.

[0023] The gas supply source 111 is connected to the CCC chamber 100 and includes one or more gas sources. The gas supply source 111 is configured to deliver one or more gases from the one or more gas sources to the processing volume 120. Each of the one or more gas sources provides a processing gas (e.g., argon, hydrogen, or helium). In some embodiments, one or more of a carrier gas and an ionizable gas can be provided to the processing volume 120 along with one or more precursors. In some examples, a remote plasma source can be used to deliver a plasma formed by a gas provided to the CCC chamber 100 by the gas supply source 111 to the processing volume 120 of the CCC chamber 100.

[0024] The showerhead 112 may be disposed in the processing volume 120 above the component support 105, 205. The showerhead 112 includes an opening 118 for flowing one or more process gases or a plurality of process gases from a gas supply 111 into the processing volume 120. The process gases are supplied to the CCC chamber 100 via a gas supply 114, and the process gases enter a plenum 116 defined above the showerhead 112 before flowing through the opening 118. In some embodiments, different process gases that flow simultaneously during a processing operation enter the CCC chamber 100 via separate gas supplies and separate plenums before passing through the showerhead 112 into the processing volume 120.

[0025] CCC chamber 100 (eg Figure 1 ) includes a component support 105. The CCC chamber 100 (as shown Figure 2 100 ) includes a component support 205. The component support 105, 205 is configured to support one or more chamber components 107 during a CVD process performed in the CCC chamber 100. For example, the chamber component 107 can be any chamber component that requires a coating of material that can be applied by CVD or other processes performed within the CCC chamber 100. In one example, the chamber component 107 is a susceptor. In another embodiment, the chamber component 107 is a ring, such as a preheat ring, an edge ring, a shield ring, a clamp ring, a cover ring, or other types of rings used in semiconductor processing chambers. The chamber component 107 can also be a showerhead, a liner, a shield, a support shaft, etc.

[0026] The component support 105, 205 is supported in the processing volume 120 of the CCC chamber 100. In one example, the component support 105, 205 is supported by a portion of the chamber body 102. In another example, the component support 105, 205 is coupled to or otherwise supported by the sidewall 104 of the chamber body 102. Figure 1 As shown, the component support 105 is detachably connected to the side wall 104 via the side wall fixing device 110. Figure 2 As shown, component support 205 is directly coupled to sidewall 104. In some embodiments, component support 105, 205 is directly coupled to sidewall 104. In other embodiments, component support 105, 205 is coupled to sidewall 104 via sidewall fixture 110. Sidewall fixture 110 extends from sidewall 104 to component support 105, 205.

[0027] like Figure 1 and Figure 2 As shown, the component support 105, 205 is suspended above the bottom surface 122 of the chamber body 102. The component support 105, 205 is suspended in the processing volume 120 between the lid 106 and the bottom surface 122 by the side wall fixture 110 or by being directly coupled to the side wall 104. In other embodiments, which may be combined with other embodiments described herein, the component support 105, 205 sits directly on the bottom surface 122 or on another support disposed on the bottom surface 122. In one example, which may be combined with other embodiments described herein, the component support 105, 205 is permanently disposed within the processing volume 120. In another example, which may be combined with other embodiments described herein, the component support 105, 205 can be easily removed from the processing volume 120.

[0028] although Figure 1Only one component support 105 is shown in the CCC chamber 100, but one or more component supports 105 may be provided in the CCC chamber 100. Figure 2 Only one component support 205 is shown in the CCC chamber 100 , but one or more component supports 205 may be provided in the CCC chamber 100 .

[0029] In operation, the component support 105, 205 holds one or more chamber components 107 during the CVD process. In one embodiment, which may be combined with other embodiments described herein, the chamber component 107 is made of a graphite material. In another embodiment, the chamber component 107 is made of silicon carbide (SiC). The CVD process is used to coat the chamber component 107 with a material. For example, the chamber component 107 is coated with a carbon-containing material. In an example, the carbon-containing material can be silicon carbide (SiC) or tantalum carbide (TaC). It is also contemplated that the carbon-containing material can be laminated on the chamber component 107 by several layers of the same carbon-containing material or different carbon-containing materials.

[0030] The material coating on the chamber component 107 improves the durability of the chamber component 107 by increasing the strength and hardness of the chamber component to reduce wear. In addition, the coating of the chamber component 107 allows for improved chemical resistance and high temperature resistance of the chamber component 107. Moreover, the coating allows for improved thermal shock resistance, reduced thermal expansion, improved thermal conductivity, and reduced density, which improves the service life of the chamber component 107.

[0031] The chamber component 107 is in contact with the component support 105, 205 at the fixing points 124. Each fixing point 124 has a clearance of about 0.2 mm on the chamber component 107. 2 To about 100mm 2 Therefore, it is challenging to apply material to the chamber component 107 at the fixing point 124. Therefore, as described in more detail below, the component support 105, 205 contacts the chamber component 107 at the fixing point 124, which is located at a position that reduces stress applied to the fixing point 124 via the reactive gases and plasma during semiconductor processing.

[0032] Figure 3306 is a rear view of a pedestal according to an embodiment described herein. The component support 105 is configured to support a chamber component 107 (e.g., a pedestal 302) in the CCC chamber 100. The back side 304 is opposite to the front side 305 of the pedestal 302. The front side 305 is configured to support a substrate during semiconductor processing. The back side 304 of the pedestal 302 includes one or more slots 306. The slots 306 are formed partially through the pedestal 302. The slots 306 are configured to define a fixing point 124 for the component support 105. The slots 306 are radially arranged around a center point 308 of the pedestal 302. Although Figure 3 Three grooves 306 are shown, but any number of grooves 306 may be formed on the back side 304 of the base 302. The shape of the grooves 306 is not limited. Figure 3 The shape of the groove 306 shown is limited. For example, the groove 306 can have a circular, linear, triangular, square, rectangular or other suitable shape. Each groove 306 can have a different shape and / or orientation. By locating the groove 306 and the fixing point 124 on the back side 304 of the base 302, the reaction gas exposure at the fixing point 124 is reduced. The contact of the reaction gas with the back side 304 of the base 302 is limited. The support shaft area covers the back side 304 of the base 302. The support shaft area is defined as the area where the support shaft in the semiconductor processing chamber cooperates with the base 302. The support shaft area is covered with the groove 306. Therefore, due to the covering of the support shaft area, the reaction gas exposure of the fixing point 124 is reduced. In this way, the life of the base 302 is extended.

[0033] Figure 4A 1 is a back view of a preheat ring 402 according to an embodiment described herein. The component support 105 is configured to support a chamber component 107 (e.g., a preheat ring 402) in a CCC chamber 100. A back side 401 of the preheat ring 402 is opposite a front side 403 of the preheat ring 402. When the back side 401 is installed in a semiconductor processing chamber for manufacturing a substrate, the back side 401 faces the bottom of the chamber and away from the processing area. In one embodiment, the preheat ring 402 is designed to be positioned around the substrate support. When the process gas enters the processing volume 120 and flows through the preheat ring 402, the preheat ring 402 facilitates preheating of the process gas. The preheat ring 402 includes an annular region 404 that defines an inner circumference 406 of the preheat ring 402. An outer circumference 408 is radially outward of the inner circumference 406. The inner circumference 406 and the outer circumference 408 define the preheat ring 402. The back side 401 of the preheat ring 402 includes an inner portion 410 and an outer portion 412 .

[0034] Figure 4B4 is an isometric view of a portion of a preheat ring according to an embodiment described herein. An outer portion 412 extends away from an inner portion 410. The outer portion 412 forms a flange 414 that extends away from the inner portion 410. A corner 418 is defined as the intersection of the flange 414 and the inner portion 410. The corner 418 forms a complete circle around the preheat ring 402. The fixing point 124 is located at the corner 418 of the preheat ring 402. Although Figure 4B Two fixing points 124 are shown, but any number of fixing points 124 may be formed along the corner 418 of the preheat ring 402. When installed, the corner 418 engages another surface of the semiconductor processing chamber. In this way, the fixing points 124 on the corner 418 are covered. By having the fixing points 124 covered and located on the back side 401 of the preheat ring 402, the exposure of the reactant gases at the fixing points 124 is reduced. The contact of the reactant gases with the back side 401 of the preheat ring 402 is limited. In this way, the life of the preheat ring 402 is extended.

[0035] Figure 5A is a schematic side view of one example of a component support of a support base according to embodiments described herein. Figure 5B is a schematic perspective view of an example of a component support according to embodiments described herein. The component support 105 is configured to support a chamber component 107, such as Figure 3 The component support 105 includes a base 502, a support rod 504, a support bar 506, a support foot 508, and a contact rod 510. The support rod 504 and the support foot 508 are coupled to the base 502. The support rod 504 and the support foot 508 extend in a vertical direction away from a top surface 503 of the base 502. The top surface 503 is horizontal. Figure 1 As shown, in one example, the base 502 is coupled to the sidewall 104 via the sidewall fixture 110. In another example, the base 502 is positioned on the bottom surface 122 of the chamber body 102.

[0036] The support rod 506 is coupled to the legs 508. In one example, the support rod 506 is curved. The support rod 506 can be bent toward the chamber component 107. In another example, the support rod 506 is straight. The support rod 506 includes one or more contact rods 510 coupled thereto. For example, Figure 5A and 5B As shown, two contact rods 510 are coupled to the support rod 506. The support rod 504 includes the contact rod 510 coupled to the side surface 507 of the support rod 504. The support rod 504 is disposed farther from the chamber member 107 than the support rod 506. In an example, the support rod 506 includes two contact rods 510 and the support rod 504 includes one contact rod 510.

[0037] Each contact bar 510 is configured to contact the back side 304 of the base 302 at a separate fixing point 124 to support the base 302. The component support 105 is configured to support the base 302 so that the back side 304 faces the top surface 503 of the base 502. The back side 304 also faces the bottom surface 122 of the chamber body 102 (see Figure 1 In other words, the component support 105 is configured to support the pedestal 302 such that the back side 304 is substantially perpendicular (eg, within 10 degrees) to the top surface 503 of the base 502 and the bottom surface 122 of the chamber body 102 .

[0038] The number of contact rods 510 corresponds to the number of slots 306 on the base 302. The contact rods 510 are disposed at an angle relative to the top surface 503 of the base 502 (i.e., angled relative to a horizontal plane). For example, the contact rods 510 may be disposed at an angle relative to the top surface 503 of the base 502 such that the contact rods 510 extend away from the top surface 503. The angle of the contact rods 510 allows the base 302 to be more securely held and the contact on the base 302 to be minimized. The angle of the contact rods 510 is between about 5° and about 95°. The contact rods 510 allow the base 302 to remain in contact with the component support 105. The contact points 512 at the ends of the contact rods 510 are shaped to ensure that the base 302 remains in contact with the contact rods 510. The contact points 512 are positioned to contact the slots 306. The weight of the base 302 allows the contact rods 510 to support the base 302 disposed thereon. The contact point 512 may be any of a circle, rectangle, triangle, square, or other shape suitable for contacting the groove 306 of the base 302. In some embodiments that may be combined with other embodiments described herein, the bases 502 of two adjacent component supports 105 may be coupled together. In this way, multiple bases 302 may be retained. Although Figure 5A and 5B Three contact bars 510 are shown, but the number of contact bars 510 may be adjusted to correspond to the number of slots 306 on the base 302 .

[0039] Figure 6 is a flow chart of a method for supporting chamber components in a chamber component coating (CCC) chamber during a coating process according to embodiments described herein. For ease of explanation, reference is made to Figure 1 The method 600 is described with reference to the CCC chamber 100 shown, however other chambers suitable for coating chamber components may be used in conjunction with the method 600. The method 600 is described with reference to coating a chamber component 107 while supported by a component support 105. The chamber component 107 may be a base 302, such as Figure 3 In one example, the component support 105 may be as shown. Figure 5A and Figure 5B as shown or having another suitable configuration.

[0040] In operation 601, a pedestal 302 is positioned on a component support 105. The component support 105 is disposed in a processing volume 120 of a CCC chamber 100. The pedestal 302 includes one or more grooves 306 disposed on a back side 304 of the pedestal 302 (see FIG. Figure 3 ). The slot 306 is aligned with the contact bar 510 of the component support 105. The contact point 512 of the contact bar 510 contacts the slot 306 to support the susceptor 302 within the processing volume 120. The contact point 512 contacts the slot 306 at the fixing point 124. The fixing point 124 is the only location on the susceptor 302 that is contacted. The component support 105 is configured so that the fixing point 124 is located on the back side 304 of the susceptor 302. It is contemplated that more than one susceptor 302 is positioned on other component supports 105 disposed in the processing volume 120 for subsequent coating operations.

[0041] In operation 602, the susceptor 302 is coated with a material inside the processing volume 120. The susceptor 302 is coated with a carbon-containing material, such as silicon carbide, tantalum carbide, etc. The susceptor 302 is coated with a carbon-containing material to protect the susceptor 302 from the reaction gas in future processing steps. For example, a carbon-containing gas source provides a carbon-containing gas, accompanied by a carrier gas. The carrier gas can be a single gas or a gas mixture. The carbon-containing gas is processed at a temperature above 1000° C.-1500° C. at atmospheric pressure or reduced pressure.

[0042] In some embodiments, after operation 602, the susceptor 302 is installed in a semiconductor processing chamber. The semiconductor processing chamber may be a chamber for manufacturing semiconductor substrates. The susceptor 302 may be used to support a substrate in the semiconductor processing chamber. The susceptor 302 may be exposed to the reaction gas in the semiconductor processing chamber. The role of the fixed point 124 being located on the back side 304 of the susceptor 302 is to reduce the exposure of the reaction gas at the fixed point 124. For example, the support shaft region that defines the position where the support shaft engages with the susceptor 302 covers the fixed point 124. The support shaft region is covered with a groove 306. The contact of the reaction gas with the back side 304 of the susceptor 302 is limited. Therefore, if the carbon-containing material is not sufficiently coated at the fixed point 124, the reaction gas will be less likely to damage the susceptor 302 at the fixed point 124. In this way, the life of the susceptor 302 is extended.

[0043] Fig. 7A is a schematic perspective view of another example of a part support supporting a preheat ring according to embodiments described herein. Figure 7B is a schematic top view of another example of a component support according to embodiments described herein. In one example, the component support is a component support 205 that is configured to support a chamber component 107, such as Figure 4A and4B 104. The component support 205 includes a support rod 702 and one or more contact rods 704 extending from the support rod 702. The contact rods 704 are coupled to the support rods 702. For example, the contact rods 704 may be welded to the support rods 702 or threaded to the support rods 702. The support rods 702 may be directly coupled to the sidewall 104. Alternatively, a support member located on the bottom surface 122 of the chamber body 102 is coupled to the support rods 702 to position the component support 205 in the processing volume 120.

[0044] The support rod 702 is disposed in the processing volume 120 of the CCC chamber 100 (see Figure 2 ). The support rod 702 includes a first portion 706 and a second portion 708. The first portion 706 and the second portion 708 are connected at an intersection 710. The intersection 710 is horizontal within the CCC chamber 100. The support rod 702 can be positioned on one or both of the first portion 706 and the second portion 708.

[0045] In one embodiment that may be combined with other embodiments described herein, Fig. 7A As shown, the first portion 706 and the second portion 708 are not parallel to each other. In another embodiment that may be combined with other embodiments described herein, the first portion 706 and the second portion 708 are parallel and connected at an intersection 710 to form a flat plate. One or more contact rods 704 extend from the support rod 702. The one or more contact rods 704 are arranged at an angle relative to the vertical axis 712. A pair of contact rods 704 are configured to support the preheating ring 402. However, it is contemplated that a single contact rod 704 is suitable for supporting the preheating ring 402. The contact rod 704 contacts the corner 418 on the back side 401 of the preheating ring 402 at the fixing point 124 (see Figure 4B ). The number of contact rods 704 corresponds to the number of fixing points 124. The angle of the contact rods 704 allows the preheat ring 402 to be more securely held on the corner 418 while minimizing contact on the preheat ring 402. The angle of the contact rods 704 relative to the vertical axis 712 is between about 10° and about 90°. The contact rods 704 allow the preheat ring 402 to maintain contact with the component support 205.

[0046] The component support 205 is configured to support the preheat ring 402 such that the back side 401 faces (or is substantially perpendicular to) the bottom surface 122 of the chamber body 102 (see Figure 1). The contact point 714 located at the end of the contact rod 704 is shaped to ensure that the preheating ring 402 remains in contact with the contact rod 704. The contact point 512 is positioned to contact the corner 418. The weight of the preheating ring 402 allows the contact rod 704 to support the preheating ring 402 disposed thereon. The contact point 714 can be any of a circular, rectangular, triangular, square, or other shape suitable for contacting the corner 418 of the preheating ring 402. In some embodiments that may be combined with other embodiments described herein, multiple support rods 702 may be disposed in the processing volume 120. In this way, multiple bases 302 may be retained. Although Figure 5A and 5B Four contact rods 704 are shown, but the number of contact rods 704 may be adjusted to correspond to the number of predetermined fixing points 124 on the preheat ring 402. Figure 5A and Figure 5B Two preheat rings 402 are shown, but the number of preheat rings 402 can be adjusted and is not affected by Figure 5A and Figure 5B limit.

[0047] Figure 8 is a flow chart of a method for supporting chamber components in a chamber component coating (CCC) chamber during a coating process according to embodiments described herein. For ease of explanation, reference is made to Figure 2 The method 800 is described with reference to the CCC chamber 100 shown, however other chambers suitable for coating chamber components may be used in conjunction with the method 800. The method 800 is described with reference to coating a chamber component 107 while supported by a component support 205. The chamber component 107 may be a preheat ring 402, such as Figure 4A and 4B The component support 205 may be as shown. Fig. 7A and 7B as shown, or having another suitable configuration.

[0048] In operation 801, the preheat ring 402 is positioned on the component support 205. The component support 205 is disposed in the processing volume 120 of the CCC chamber 100. The preheat ring 402 includes a corner 418 disposed on the back side 401 of the preheat ring 402. The contact pins 704 of the component support 205 contact the corners 418 of the preheat ring 402. The contact points 714 of the contact pins 704 contact the corners 418 to support the preheat ring 402 within the processing volume 120. The contact points 714 contact the corners 418 at the fixing points 124. The fixing points 124 are the only locations on the preheat ring 402 that are contacted. The component support 205 is configured so that the fixing points 124 are located on the back side 401 of the preheat ring 402. It is contemplated that more than one preheat ring 402 may be positioned on other contact rods 704 disposed along the support rods 702 within the processing volume 120 .

[0049] In operation 802, a preheat ring 402 is coated with a material within the processing volume 120. The preheat ring 402 is coated with a carbon-containing material, such as silicon carbide or tantalum carbide. The preheat ring 402 is coated with a carbon-containing material to protect the preheat ring 402 from the reaction gas during future processing steps. For example, a carbon-containing gas source provides a carbon-containing gas, accompanied by a carrier gas. The carrier gas can be a single gas or a gas mixture. The carbon-containing gas is processed at a temperature above 1000° C.-1500° C. at atmospheric pressure or reduced pressure.

[0050] In some embodiments, after operation 802, the preheat ring 402 is installed in a semiconductor processing chamber. The semiconductor processing chamber can be a chamber for manufacturing semiconductor substrates. The preheat ring 402 can be exposed to the reaction gas in the semiconductor processing chamber. The fixed point 124 is located on the back side 401 of the preheat ring 402 to reduce the exposure of the reaction gas at the fixed point 124. The contact of the reaction gas with the back side 401 of the preheat ring 402 is limited. Therefore, if the carbon-containing material is not sufficiently coated at the fixed point 124, the reaction gas will be less likely to damage the preheat ring 402 at the fixed point 124. In this way, the life of the preheat ring 402 is extended.

[0051] In summary, embodiments of the present disclosure relate to a component support for coating chamber components by chemical vapor deposition (CVD). The component support includes a contact rod configured to contact the chamber component at a fixed point located on the back side of the chamber component. The component support is configured to support the chamber component in a processing volume while minimizing contact of the chamber component. When the chamber component is installed, the fixed point on the back side reduces the exposure of the fixed point to the reaction gas. Therefore, if the carbon-containing material is not fully coated at the fixed point, the reaction gas will be less likely to damage the component at the fixed point. Therefore, the service life of the chamber component is extended.

[0052] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the appended claims.

Claims

1. A method for coating a chamber component, comprising: Positioning a chamber component on a component support in a chamber body, wherein one or more contact bars extending from the component support contact a back side of the chamber component only at one or more fixing points, wherein the one or more fixing points are defined by one or more slots formed in the back side of the chamber component; and The chamber component is coated with a carbonaceous material while the chamber component is supported on the component support, wherein the back side of the chamber component faces a bottom surface of the chamber body.

2. The method according to claim 1, further comprising: A second chamber component is positioned on the component support and the second chamber component is coated with the carbonaceous material.

3. The method according to claim 1, further comprising: A second chamber component is positioned on a second component support in the chamber body and the second chamber component is coated with the carbonaceous material. The method of claim 1 , wherein the chamber component is a susceptor. 5 . The method of claim 1 , wherein the back side of the chamber component is opposite a front side of the chamber component configured to support a substrate in a semiconductor processing chamber. The method of claim 1 , wherein the carbon-containing material is silicon carbide (SiC) or tantalum carbide (TaC).

7. The method of claim 1, wherein the one or more contact rods are disposed at an angle relative to a horizontal plane, wherein the angle of the one or more contact rods is between about 5° and about 95°.

8. The method of claim 1, wherein each of the one or more contact bars comprises a contact point configured to contact the slot on the back side of the chamber component, wherein the contact point has a circular, rectangular, triangular, or square shape.

9. The method of claim 1, wherein the slot is located in a support shaft region located on the back side of the chamber member, wherein the support shaft region defines an area of ​​the chamber member operable to engage a support shaft.

10. A method for coating a chamber component, comprising: Positioning a chamber component on a component support in a chamber body, wherein one or more contact rods extending from support rods of the component support contact the chamber component at the one or more fixing points, wherein the chamber component comprises: an inner portion, the inner portion forming a ring; and an outer portion surrounding the inner portion, wherein the inner portion extends away from the outer portion to form a flange such that the one or more securing points are located at a corner formed on the chamber component, the corner being defined as the intersection of the flange and the inner portion; and The chamber component is coated with a carbonaceous material while the chamber component is supported on the component support, wherein the chamber component faces a bottom surface of the chamber body.

11. The method according to claim 10, further comprising: A second chamber component is positioned on the component support and the second chamber component is coated with the carbonaceous material.

12. The method according to claim 10, further comprising: A second chamber component is positioned on a second component support in the chamber body and the second chamber component is coated with the carbonaceous material. The method of claim 10 , wherein the chamber component is a preheat ring.

14. The method of claim 10, wherein the carbon-containing material is silicon carbide (SiC) or tantalum carbide (TaC).

15. The method of claim 10, wherein the one or more contact rods are disposed at an angle relative to a vertical axis, wherein the angle of the one or more contact rods is between about 10° and about 90°.

16. A semiconductor processing chamber component support, comprising: Base; one or more feet coupled to the base, the one or more feet extending away from a top surface of the base; a support rod coupled to the base, the support rod extending away from the top surface of the base; a support rod, the support rod being coupled to the support foot; and Contact bars are coupled to the support bars and to side surfaces of the support bars, wherein the contact bars each include a contact point configured to contact a back side of a chamber component.

17. The semiconductor processing chamber component support of claim 16, wherein the contact points are configured to contact one or more grooves formed in the back side of the chamber component.

18. The semiconductor processing chamber component support of claim 17, wherein the back side of the chamber component is opposite a front side of the chamber component configured to support a substrate in a semiconductor processing chamber.

19. The semiconductor processing chamber component support of claim 16, wherein the support rods extend from the top surface of the base in a perpendicular direction relative to the top surface.

20. The semiconductor processing chamber component support of claim 16, wherein the component support is a graphite material coated with silicon carbide.

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