Electron beam exposure method and system

Abstract

The invention provides an electron beam exposure method and system, and the method comprises the steps: obtaining a plurality of to-be-exposed sub-patterns; aiming at each to-be-exposed sub-graph, determining a vector scanning signal corresponding to the to-be-exposed sub-graph, and indicating a target scanning point needing to be exposed in the vector scanning signal; in response to the movement of the displacement table to a set position corresponding to each to-be-exposed sub-pattern, controlling an electron beam to move based on the determined vector scanning signal, performing electron beam exposure on the sample on the displacement table under the target scanning point, and determining an exposed sub-pattern; and splicing the determined exposed sub-graphs of the to-be-exposed sub-graphs to obtain an exposed graph. When electron beam exposure is determined to be carried out, only the target scanning point needing to be exposed needs to be concerned, high-speed exposure can be achieved, exposure of all the to-be-exposed sub-graphs is achieved one by one through matrix division, exposure of the whole large graph is finally completed, and the exposure requirements in more application scenes are met.

Description

Technical Field

[0001] The present disclosure relates to the technical field of electron beam exposure, and in particular to an electron beam exposure method and system. Background Art

[0002] At present, simple exposure equipment usually uses an electron microscope system to achieve exposure. The method adopted is to apply photoresist on the surface of a sample, place the mask above the sample with the photoresist applied on the surface, and then put it into the electron microscope system as a whole. The electron beam passes through the hollow pattern of the mask to scan the entire surface of the sample, and finally achieve exposure.

[0003] In order to achieve faster sample exposure, the related technology can also realize maskless exposure by pre-installing a beam gate, which still uses a raster scanning method and only uses a beam gate to quickly shut off the electron beam at the position where exposure is not required. However, the raster scanning method of conventional electron microscope systems is inefficient, especially for larger exposure areas, and cannot quickly realize the exposure of large graphics. Summary of the invention

[0004] The embodiments of the present disclosure at least provide an electron beam exposure method and system to quickly realize large pattern exposure.

[0005] In a first aspect, an embodiment of the present disclosure provides an electron beam exposure method, which is applied to a control center of an electron beam exposure system. The method includes:

[0006] Acquire a plurality of sub-patterns to be exposed, wherein the plurality of sub-patterns to be exposed are obtained by dividing the pattern to be exposed into a matrix according to the size of the electron gun scanning area;

[0007] For each of the sub-patterns to be exposed, determining a vector scanning signal corresponding to the sub-pattern to be exposed, wherein the vector scanning signal indicates a target scanning point to be exposed;

[0008] In response to the displacement stage moving to a set position corresponding to each of the sub-patterns to be exposed, the electron beam is controlled to move based on the determined vector scanning signal, and the sample on the displacement stage is subjected to electron beam exposure at the target scanning point to determine the exposed sub-pattern;

[0009] The exposed sub-patterns determined by the sub-patterns to be exposed are spliced ​​to obtain the exposed pattern.

[0010] In a possible implementation, the electron beam exposure system includes an electron gun module, an electron gun control subsystem, and an exposure machine control subsystem; and controlling the movement of the electron beam based on the determined vector scanning signal includes:

[0011] The determined vector scanning signal is sent to the electron gun control subsystem through the exposure machine control subsystem, so that the electron gun control subsystem generates a deflection control signal for controlling the electron gun scanning coil to deflect the electron beam based on the vector scanning signal;

[0012] The electron gun module is controlled to move the electron beam based on the deflection control signal.

[0013] In a possible implementation, the electron beam exposure system further includes a beam gate module, and the exposure machine control subsystem includes a beam gate controller; performing electron beam exposure on the sample on the translation stage at the target scanning point includes:

[0014] In response to the translation stage moving to a first set position corresponding to the target scanning point, the beam gate controller turns off the deflection action of the beam gate module with respect to the electron beam, and performs electron beam exposure at the target scanning point on the sample on the translation stage;

[0015] Also includes:

[0016] In response to the translation stage moving to a second set position corresponding to a non-target scanning point, the beam gate module is activated by a high voltage signal generated by the beam gate controller to deflect the electron beam, thereby avoiding electron beam exposure of the sample on the translation stage at the non-target scanning point.

[0017] In a possible implementation, the exposure machine control subsystem includes an exposure machine scanning generator; the determining of the vector scanning signal corresponding to the sub-pattern to be exposed includes:

[0018] The exposure machine scan generator generates a vector scanning signal corresponding to the sub-pattern to be exposed.

[0019] In a possible implementation manner, the electron beam exposure system further includes a displacement compensation module; after determining the exposed sub-pattern, the method further includes:

[0020] The displacement compensation module is used to correct the displacement deviation of the displacement stage, so that the displacement deviation between two adjacent exposed sub-patterns is less than a preset deviation value;

[0021] After the displacement deviation correction is completed, the displacement stage is controlled to move to a set position corresponding to the next sub-pattern to be exposed.

[0022] In a possible implementation manner, the following steps are used to determine that the displacement stage moves to a set position corresponding to each of the sub-patterns to be exposed:

[0023] For each of the sub-patterns to be exposed, determining the central coordinates of the sub-patterns to be exposed;

[0024] Determining the coordinates of the translation stage that match the central coordinates from a pre-stored translation stage coordinate comparison table;

[0025] The set position corresponding to the sub-pattern to be exposed to which the translation stage moves is determined based on the determined coordinates of the translation stage.

[0026] In a possible implementation, the electron beam exposure system further includes a linkage sample transfer module, and before the translation stage moves to a set position corresponding to each of the sub-patterns to be exposed, the method further includes:

[0027] The sample is transferred to the displacement platform through the linkage sample transfer module.

[0028] In a second aspect, an embodiment of the present disclosure further provides an electron beam exposure system, including a control center for performing electron beam exposure using the electron beam exposure method described in any one of the first aspect and various embodiments thereof.

[0029] In a possible implementation, it also includes a linkage sample transmission module;

[0030] The linked sample transfer module is used to transfer the sample from the exchange chamber of the electron beam exposure system to the displacement table in the main chamber of the electron beam exposure system.

[0031] In a possible implementation, the linkage sample transfer module includes: an exchange chamber sample transfer component located in the exchange chamber, and a main chamber sample transfer component located in the main chamber;

[0032] The exchange chamber sample transfer assembly comprises a transfer upper plate and a transfer bottom plate which can slide relative to each other, a sample holder is placed on the transfer upper plate, a chip substrate is placed in the sample holder, and the transfer upper plate is used to move the sample holder to above the main chamber sample transfer assembly;

[0033] The main chamber sample transfer assembly includes a lifting base and a transfer upper part that can slide relative to the lifting base. The lifting base is used to raise the transfer upper part so that the transfer upper part removes the sample holder from the exchange chamber sample transfer assembly. The transfer upper part is used to move the sample holder to the loading plate of the translation stage.

[0034] In a possible implementation manner, a conical positioning portion fixedly connected to the loading plate is provided on the loading plate of the translation stage, and a positioning hole corresponding to the conical positioning portion is provided at the lower portion of the sample holder;

[0035] The conical positioning portion is used to be inserted into the positioning hole of the sample holder to fix the sample holder on the object carrier.

[0036] In a possible implementation manner, it further includes an electron gun module, an electron gun control subsystem, and an exposure machine control subsystem, wherein the electron gun control subsystem is electrically connected to the exposure machine control subsystem and the electron gun module;

[0037] The exposure machine control subsystem is used to generate a vector scanning signal and send the vector scanning signal to the electron gun control subsystem;

[0038] The electron gun control subsystem is used to generate a deflection control signal for controlling the electron gun scanning coil to deflect the electron beam based on the vector scanning signal, so as to control the electron gun module to move the electron beam based on the deflection control signal.

[0039] In a possible implementation manner, a beam gate module is further included, and the exposure machine control subsystem includes a beam gate controller, and the beam gate controller is electrically connected to the beam gate module;

[0040] The beam gate controller is used to close the deflection action of the beam gate module for the electron beam in response to the displacement stage moving to a first set position corresponding to the target scanning point to be exposed, and perform electron beam exposure on the sample on the displacement stage at the target scanning point; and

[0041] In response to the translation stage moving to a second set position corresponding to a non-target scanning point that does not need to be exposed, the beam gate module is turned on based on the generated high-voltage signal to deflect the electron beam, thereby avoiding electron beam exposure of the sample on the translation stage at the non-target scanning point.

[0042] In a possible implementation, the exposure machine control subsystem includes an exposure machine scanning generator;

[0043] The exposure machine scanning generator is used to generate the vector scanning signal.

[0044] In a possible implementation, it further includes a displacement compensation module;

[0045] The displacement compensation module is used to perform displacement deviation correction on the displacement stage so that the displacement deviation between two adjacent exposed sub-patterns is less than a preset deviation value.

[0046] By adopting the above-mentioned electron beam exposure method and system, when a plurality of sub-graphs to be exposed are obtained, a vector scanning signal corresponding to each sub-graph to be exposed can be determined. In this way, when the displacement stage moves to a set position corresponding to each sub-graph to be exposed, the electron beam movement is controlled based on the determined vector scanning signal, and the sample on the displacement stage is exposed at the target scanning point to be exposed, and the exposed sub-graph is determined, and then the exposed sub-graphs determined by each sub-graph to be exposed are spliced ​​to obtain a complete exposed graph. When determining that electron beam exposure is required, the present disclosure only needs to focus on the specific scanning point (i.e., the target scanning point) to be exposed, which can achieve higher-speed exposure. At the same time, the exposure of each sub-graph to be exposed can be achieved one by one through matrix division, and finally the exposure of the overall larger graph is completed, which meets the exposure requirements in more application scenarios.

[0047] Other advantages of the present disclosure will be explained in more detail in conjunction with the following description and drawings.

[0048] It should be understood that the above description is only an overview of the technical solution of the present disclosure, so that the technical means of the present disclosure can be generally understood and then implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present disclosure more obvious and easy to understand, the specific implementation methods of the present disclosure are specifically described below with examples. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for use in the embodiments will be briefly introduced below. The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present disclosure and are used together with the specification to illustrate the technical solutions of the present disclosure. It should be understood that the drawings only illustrate certain embodiments of the present disclosure and therefore should not be regarded as limiting the scope of protection. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work. Moreover, the same reference numerals are used to represent the same components throughout the drawings. In the drawings:

[0050] Figure 1 A flow chart of an electron beam exposure method provided by an embodiment of the present disclosure is shown;

[0051] Figure 2 An architecture diagram of an electron beam exposure system provided by an embodiment of the present disclosure is shown;

[0052] Figure 3 A structural diagram of another electron beam exposure system provided by an embodiment of the present disclosure is shown;

[0053] Figure 4 A front view of an electron beam exposure system provided by an embodiment of the present disclosure;

[0054] Figure 5 A front view of another electron beam exposure system provided by an embodiment of the present disclosure;

[0055] Figure 6 A top view of an electron beam exposure system provided by an embodiment of the present disclosure;

[0056] Figure 7 A schematic diagram of a conical positioning portion provided in an embodiment of the present disclosure;

[0057] Figure 8 A schematic diagram of an electron beam exposure device provided by an embodiment of the present disclosure is shown;

[0058] Fig. 9 A schematic diagram of an electronic device provided by an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0059] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0060] In the description of the embodiments of the present disclosure, it should be understood that terms such as "including" or "having" are intended to indicate the presence of the disclosed features, numbers, steps, behaviors, components, parts, or a combination thereof in the specification, and do not exclude the possibility of the presence of one or more other features, numbers, steps, behaviors, components, parts, or a combination thereof.

[0061] Unless otherwise specified, “ / ” means or. For example, A / B can mean A or B. The “and / or” in this article is merely a way to describe the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone.

[0062] The terms "first", "second", etc. are used only to distinguish the same or similar technical features for the convenience of description, and should not be understood as indicating or implying the relative importance or quantity of these technical features. Thus, the features defined by "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the embodiments of the present disclosure, unless otherwise specified, the term "plurality" means two or more than two.

[0063] Research has found that in related technologies, maskless exposure can be achieved by pre-installing a beam gate, which still uses a raster scanning method, and only uses a beam gate to quickly shut off the electron beam at the position where exposure is not required. However, the raster scanning method of conventional electron microscope systems is inefficient, especially for larger exposure areas, which far exceed the maximum scanning area of ​​the electron beam, making it impossible to quickly achieve exposure of large graphics.

[0064] In order to at least partially solve one or more of the above problems and other potential problems, the present disclosure provides an electron beam exposure method and system to quickly realize large pattern exposure.

[0065] To facilitate understanding of this embodiment, first, an electron beam exposure method disclosed in the embodiment of the present disclosure is introduced in detail. The execution subject of the electron beam exposure method provided in the embodiment of the present disclosure is generally an electronic device with certain computing capabilities, and the electronic device includes, for example: a terminal device or a server or other processing device, and the terminal device can be a user equipment (User Equipment, UE), a mobile device, a personal digital assistant (Personal Digital Assistant, PDA), etc., and other processing devices can be, for example, a host computer, etc. Considering that the embodiment of the present disclosure can be mainly applied to electron beam exposure scenarios, the electronic device here can specifically be the control center of the entire electron beam exposure system.

[0066] In some possible implementations, the electron beam exposure method may be implemented by a processor calling computer-readable instructions stored in a memory.

[0067] See also Figure 1 , which shows a flow chart of an electron beam exposure method provided by an embodiment of the present disclosure, the method comprising the following steps S110 to S140:

[0068] S110: Acquire a plurality of sub-patterns to be exposed, wherein the plurality of sub-patterns to be exposed are obtained by dividing the pattern to be exposed into a matrix according to the size of the electron gun scanning area;

[0069] S120: for each sub-graphic to be exposed, determining a vector scanning signal corresponding to the sub-graphic to be exposed, wherein the vector scanning signal indicates a target scanning point to be exposed;

[0070] S130: in response to the displacement stage moving to a set position corresponding to each sub-pattern to be exposed, controlling the electron beam to move based on the determined vector scanning signal, and performing electron beam exposure on the sample on the displacement stage at a target scanning point to determine a sub-pattern after exposure;

[0071] S140: splicing the exposed sub-patterns determined by the sub-patterns to be exposed to obtain an exposed pattern.

[0072] In order to facilitate understanding of the electron beam exposure method provided by the embodiment of the present disclosure, the application scenario of the method is briefly described below. The electron beam exposure method here can be applied to any technical field that requires electron beam exposure to achieve sample component detection, and can also be other related technical fields with electron beam exposure requirements, and the embodiment of the present disclosure does not make specific restrictions on this.

[0073] In the technical solution of realizing exposure by the raster scanning method of the conventional electron microscope system, especially for a larger exposure area, since the graphic area far exceeds the maximum scanning area, it is impossible to quickly realize the exposure of the large graphic, and the efficiency of the raster scanning is extremely low.

[0074] Based on this, the disclosed embodiment provides an electron beam exposure method for performing vector scanning on target scanning points based on graphic splitting. The method pre-identifies the graphics to be exposed (such as the sub-graphic to be exposed or the graphic to be exposed), and then removes the scanning waveform signal of the area in the graphic that does not need to be exposed, generates a new vector scanning signal and sends it to the scanning generator, so that high-speed exposure can be achieved without the beam gate turning off the electron beam; in addition, the method divides the graphic to be exposed into an array of the size of the area scannable by the electron gun, for example, the original graphic is converted into squares of equal size, each square is used as a sub-graphic to be exposed, and then the squares without graphics are removed, and the displacement coordinates corresponding to the center of the square with graphics and the scanning signal generated by the exposure graphic of the square are used as a set of data, and all the data generated in the same way are exposed one by one in a clockwise outward spiral manner, and finally the exposure of the overall larger graphic is completed with higher efficiency.

[0075] The multiple sub-patterns to be exposed obtained here can be obtained by matrix division of the pattern to be exposed according to the size of the electron gun scanning area. In other words, the pattern or sub-pattern to be exposed is pre-identified here, and a single-field pattern can be determined by matrix division, and each single-field pattern can correspond to a sub-pattern to be exposed. In addition to referring to the size of the electron gun scanning area, the specific division method can also be determined in combination with actual application requirements, and no specific limitation is made here.

[0076] For each sub-graphic to be exposed, it is first necessary to determine the vector scanning signal corresponding to the sub-graphic to be exposed. In this way, when the translation stage moves to the set position corresponding to the sub-graphic to be exposed, the electron beam movement can be controlled based on the determined vector scanning signal, and the sample on the translation stage is subjected to electron beam exposure at the target scanning point to determine the exposed sub-graphic. Since the target scanning point here indicates the scanning point that needs to be exposed, and for the vector scanning method adopted in the embodiment of the present disclosure, for example, when the single-field graphic that currently needs to be exposed has two scanning points that are relatively far apart, the electron beam can be turned off after scanning the first scanning point until it moves to the second scanning point. This will significantly improve the exposure efficiency and avoid the problem of inefficiency caused by point-by-point scanning.

[0077] In addition, in the process of scanning a single-field graphic here, the coordinates of the displacement stage corresponding to the center of the single-field graphic can be matched with the vector scanning signal generated by the graphic. In other words, when determining that the displacement stage has moved to the scanning position corresponding to the single-field graphic, scanning is performed using the corresponding vector scanning signal, and here only electron beam exposure is performed on the target scanning points that need to be exposed, thereby ensuring exposure efficiency. The various exposure results can also be spliced ​​to obtain a complete exposed graphic.

[0078] like Figure 2 As shown, an example is an electron beam exposure system with a combined architecture of an exchange chamber 1 and a main chamber 2, wherein a sample can be placed in the exchange chamber 1, and when the vacuum of the exchange chamber 1 and the vacuum of the main chamber 2 are close to being maintained at a vacuum of 1e-1Pa or below 1e-2Pa, the isolation valve 3 is opened and the sample is transferred to the main chamber 2; in the main chamber 2, the sample can be transferred to the translation stage 21, and at this point, the sample placed on the translation stage 21 can be subjected to electron beam exposure based on the electron beam exposure method provided in the embodiment of the present disclosure.

[0079] It should be noted that Figure 2 This is only an exemplary architecture of an electron beam exposure system. In practical applications, the electron beam exposure method provided in the embodiments of the present disclosure can also be applied to other system architectures, and no specific limitation is made here.

[0080] The electron beam exposure method provided in the embodiment of the present disclosure can be implemented based on the joint control of the control center 4. Figure 2 As shown, the control center 4 here serves as the control center of the entire electron beam exposure system, and can realize fast exposure of large graphics based on other functional modules or control subsystems included in the electron beam exposure system.

[0081] In addition, the electron beam exposure system in the embodiment of the present disclosure also mainly includes a linkage sample transfer module 22, an electron gun module 23, a beam gate module 24, an electron gun control subsystem 41, and an exposure machine control subsystem 42. The exposure machine control subsystem 42 includes a beam gate controller 421 and an exposure machine scanning generator 422. Next, the working principle of the electron beam exposure implemented in the embodiment of the present disclosure will be specifically explained in combination with the above-mentioned functional modules and related control subsystems.

[0082] Here, before performing electron beam exposure on the sample on the translation stage 21 , in principle, the sample can be first transferred from the exchange chamber 1 to the translation stage 21 in the main chamber 2 through the linkage sample transfer module 22 .

[0083] In the embodiment of the present disclosure, the exposure machine scanning generator 422 generates a vector scanning signal corresponding to the sub-pattern to be exposed, and then the electron beam movement can be controlled based on the determined vector scanning signal according to the following steps:

[0084] Step 1: sending the determined vector scanning signal to the electron gun control subsystem 41 through the exposure machine control subsystem 42, so that the electron gun control subsystem 41 generates a deflection control signal for controlling the electron gun scanning coil 25 to deflect the electron beam based on the vector scanning signal;

[0085] Step 2: Control the electron gun module 23 to move the electron beam based on the deflection control signal.

[0086] The control center 4 generates a vector scanning signal by controlling the exposure machine scanning generator 422, and then sends the vector scanning signal to the electron gun control subsystem 41. The electron gun control subsystem 41 can generate a deflection control signal for controlling the electron gun scanning coil 25 to deflect the electron beam based on the vector scanning signal, and finally control the electron gun module 23 to move the electron beam to a specific position under the current writing field for exposure, thereby completing the graphic exposure under the current writing field.

[0087] Taking into account that the embodiment of the present disclosure implements a vector scanning method, based on this, when the translation stage 21 moves to the first set position corresponding to the target scanning point, the beam gate controller 421 is used to close the deflection action of the beam gate module 24 for the electron beam, and the sample on the translation stage 21 is subjected to electron beam exposure at the target scanning point; on the contrary, when the translation stage 21 moves to the second set position corresponding to the non-target scanning point, the high-voltage signal generated by the beam gate controller 421 is used to open the deflection action of the beam gate module 24 for the electron beam, and avoid electron beam exposure of the sample on the translation stage 21 at the non-target scanning point.

[0088] In the actual process of electron beam deflection based on the beam gate controller 421, the beam gate controller 421 can send a high-voltage signal to the receiving component 241 of the beam gate module 24, and transmit the signal to the beam gate electrode 242 through the receiving component 241. The two electrode plates included in the beam gate electrode 242 will form an electric field in the middle. The electron beam passing through the electric field will be deflected by the electric field, so that the electron beam cannot reach the sample. On the contrary, if the electric field is released, the electron beam will not be deflected and can reach the sample.

[0089] In actual applications, the control center 4 in the embodiment of the present disclosure can control the beam gate module 24 to turn off the electron beam. At this time, the sample on the moving translation stage 21 is moved to the axis of the lower pole shoe of the objective lens, and the electrode electric field of the beam gate module 24 is released. The electron beam is restored to pass through each electromagnetic lens, and finally passes through the center of the pole shoe hole of the lower pole shoe of the objective lens, and then reaches the sample. At this time, the control center 4 controls the scanning control system of the electron microscope through the electron gun control subsystem 41, indirectly controls the scanning coil 25, and finally controls the electron beam to move according to the set exposure pattern. If an area that does not need to be exposed is encountered, the electron beam is turned off by controlling the beam gate module 24, and released again when exposure is required. This is repeated to achieve exposure of a single field pattern.

[0090] In the disclosed embodiment, the single-field graphic here corresponds to a sub-graphic to be exposed, which can be specifically a square scanning area, which is a 2D space, and xy is generally equal. A multi-field graphic formed by splicing several identical or different single fields can be used as the final exposed graphic.

[0091] After the exposure of a single field pattern is completed, the sample is moved to a neighboring single field through the displacement stage 21, and the exposure process of the above method is performed again, and this process is repeated to realize the exposure of multiple fields of patterns.

[0092] In the actual process of completing the exposure of multiple fields, in order to maximize the stitching accuracy of the subsequent stitched exposed graphics, such as Figure 2 As shown, the electron beam exposure system provided by the embodiment of the present disclosure may further include a displacement compensation module 26 to achieve displacement deviation correction, which may be achieved specifically through the following steps:

[0093] Step 1: Correct the displacement deviation of the translation stage 21 by using the displacement compensation module 26, so that the displacement deviation between two adjacent exposed sub-patterns is less than a preset deviation value;

[0094] Step 2: Control the displacement stage 21 after the displacement deviation correction to move to a set position corresponding to the next sub-pattern to be exposed.

[0095] The displacement compensation module 26 here can be, for example, a laser interferometer including multiple lasers, which performs position correction based on the laser interferometer to compensate for small displacement deviations, thereby ensuring that the displacement deviation corresponding to the two single-field graphics is small enough and that the deviation between two adjacent single fields is less than 10nm, thereby making the precision of the spliced ​​multi-field graphics higher.

[0096] In actual applications, the control center 4 in the embodiment of the present disclosure realizes the displacement deviation correction of the displacement stage 21 through the displacement compensation module 26, so that the displacement stage 21 can be displaced with high precision, and the exposure of multiple fields of graphics can be completed by coordinating the deflection of the electron beam. These different writing fields finally form a complete exposure graphic or perform array exposure of the same graphic.

[0097] Before actually exposing each sub-pattern to be exposed, it is first necessary to determine that the displacement stage 21 moves to a set position corresponding to the sub-pattern to be exposed, which can be determined specifically according to the following steps:

[0098] Step 1: for each sub-graphic to be exposed, determine the center coordinates of the sub-graphic to be exposed;

[0099] Step 2: determining the coordinates of the translation stage 21 that match the center coordinates from a pre-stored translation stage 21 coordinate comparison table;

[0100] Step 3: Determine the set position corresponding to the sub-pattern to be exposed to which the translation stage 21 is moved based on the determined coordinates of the translation stage 21 .

[0101] Specifically, the disclosed embodiment can pre-store a coordinate comparison table of the displacement stage 21 between the center coordinates of the graphic and the coordinates of the displacement stage 21. In this way, once the center coordinates of any sub-graphic to be exposed are determined, the corresponding coordinates of the displacement stage 21 can be determined based on the above-mentioned coordinate comparison table of the displacement stage 21, and the displacement stage 21 can be moved to the set position corresponding to the sub-graphic to be exposed. Then, the above-mentioned electron beam exposure method can be used to expose the sample on the displacement stage 21 to obtain a single-field graphic exposure effect, and this process is repeated in sequence until a complete exposure effect is determined.

[0102] In order to facilitate further understanding of the electron beam exposure method provided by the embodiment of the present disclosure, the actual application of the method will be explained in combination with the following steps.

[0103] (1) Turn on the electron beam, adjust the electron optical parameters, move to the Faraday cup to detect the beam current, and adjust it to the required landing current value;

[0104] (2) moving to the edge of the sub-pattern to be exposed according to the navigation photo, activating the beam gate assembly to turn off the electron beam;

[0105] (3) Wafer calibration: calibrate the moving direction of the translation stage 21 to be consistent with the set direction to ensure that the pattern is exposed along the set direction, and redefine the coordinate reference point, during which the step size, rotation angle, offset, etc. are corrected;

[0106] (4) Write field calibration: The amplitude, offset and rotation angle of the electron beam exposure length and width are fitted and corrected. That is, the actual square area scanned by the electron beam is corrected to an approximately ideal square area through calibration to reduce the generation of field distortion. It mainly includes the following key points:

[0107] First, when the electron beam does not perform any deflection processing, a calibration writing field is set, which is smaller than the setting writing field to be exposed. The above two writing fields are both rectangular. At this time, the calibration writing field is located at the center of the setting writing field, and a feature point is determined under the calibration writing field, and its coordinates are recorded;

[0108] Second, the calibration writing field is moved to the four corners of the setting writing field respectively by electron beam deflection. The center of the calibration writing field and the center of the setting writing field form a set of relative coordinates. At the same time, the relative coordinates are used to move the translation stage 21 to the corresponding position. At this time, the determined feature points should still be located at the positions initially determined in the calibration writing field. The relative positions of the feature points of the calibration writing field at the four corners are determined respectively, and a set of deviation data is recorded.

[0109] Thirdly, the distortion of the set writing field is calculated through the deviation data of the feature points located at the four corners of the calibration writing field in the set writing field, and a set of correction data is fitted, including amplitude, offset and rotation angle; in this process, the laser interferometer performs real-time compensation for the movement of the translation stage 21 to ensure accuracy.

[0110] (5) Setting exposure parameters;

[0111] (6) Read in the image to be exposed, and segment and simplify the imported image according to the set writing field size. For example, delete the area without the image and keep only the area to be exposed, and establish a set of correspondence between each segmented single writing field image and its center coordinates;

[0112] (7) Electron beam exposure is performed based on the cut sub-patterns to be exposed and the coordinates of the corresponding patterns, which can be mainly completed through the following steps:

[0113] Step 1: During the movement of the translation stage 21, the beam gate controller 421 turns off the electron beam and performs position correction according to the laser interferometer until the translation stage 21 moves to the center of a single writing field;

[0114] Step 2: After reaching the set position, vector scanning is performed according to the pre-stored graphics in the writing field: for example, in a plane square area writing field, a signal driving the electron beam to scan is generated according to the coordinates of the white area in the graphics, and the electron beam does not scan the black area in the graphics, that is, the electron beam only scans the graphics area;

[0115] It should be noted that the embodiment of the present disclosure can adopt not only vector scanning but also line-by-line scanning, that is, a plane square area writing field is scanned point by point and line by line from left to right and from top to bottom, the beam gate in the white area of ​​the figure releases the electron beam, and the beam gate in the black area of ​​the figure shuts off the electron beam, and vector scanning is mainly used here;

[0116] Step 3: Repeat steps 1 and 2 until all the cut patterns are exposed.

[0117] Based on the electron beam exposure method provided by the embodiment of the present disclosure, an electron beam exposure system applying the method is also provided. Figure 2 and Figure 3 As shown, the electron beam exposure system here includes a control center 4.

[0118] In addition, the electron beam exposure system provided by the embodiment of the present disclosure further includes a linkage sample transfer module 22;

[0119] The linked sample transfer module 22 is used to transfer the sample from the exchange chamber 1 of the electron beam exposure system to the displacement stage 21 in the main chamber 2 of the electron beam exposure system.

[0120] like Figure 4 As shown, the linkage sample transfer module 22 here includes: an exchange chamber sample transfer component 200 located in the exchange chamber 1, and a main chamber sample transfer component 300 located in the main chamber 2; wherein:

[0121] The exchange chamber sample transfer assembly 200 includes a transfer upper plate 201 and a transfer bottom plate 202 that can slide relative to each other. A sample holder 100 is placed on the transfer upper plate 201. A chip substrate is placed in the sample holder 100. The transfer upper plate 201 is used to move the sample holder 100 to above the main chamber sample transfer assembly 300.

[0122] The main chamber sample transfer assembly 300 includes a lifting base 301 and a transfer upper part 302 that can slide relative to the lifting base 301. The lifting base 301 is used to raise the transfer upper part 302 so that the transfer upper part 302 removes the sample holder 100 from the exchange chamber sample transfer assembly 200. The transfer upper part 302 is used to move the sample holder 100 to the loading plate 402 of the translation stage 21.

[0123] In the embodiment of the present disclosure, the controller corresponding to the exchange chamber sample transfer component 200 can move the sample holder 100 to above the main chamber sample transfer component 300 through the exchange chamber sample transfer component 200. Figure 5 As shown, a translation stage 21 and a main chamber sample transfer assembly 300 are provided in the main chamber 2, and an exchange chamber sample transfer assembly 200 is provided in the exchange chamber 1. The exchange chamber sample transfer assembly 200 may include a transfer upper plate 201 and a transfer bottom plate 202 provided below the transfer upper plate 201, and a sample holder 100 is placed on the transfer upper plate 201. In the embodiment of the present disclosure, the transfer upper plate 201 and the transfer bottom plate 202 can slide relative to each other, so that the transfer upper plate 201 moves toward the direction close to the main chamber sample transfer assembly 300 until the sample holder 100 moves to the top of the main chamber sample transfer assembly 300, so as to facilitate the subsequent removal of the sample holder 100 by the main chamber sample transfer assembly 300.

[0124] In some possible embodiments, an isolation valve 3 is provided between the main chamber 2 and the exchange chamber 1. Before the exchange chamber sample transfer assembly 200 moves the sample holder 100 to above the main chamber sample transfer assembly 300, the present disclosure may open the isolation valve 3 so that the exchange chamber sample transfer assembly 200 passes through the isolation valve 3 to move the sample holder 100 to above the main chamber sample transfer assembly 300.

[0125] In the embodiment of the present disclosure, the controller corresponding to the main chamber sample transfer component 300 can remove the sample holder 100 from the exchange chamber sample transfer component 200 through the main chamber sample transfer component 300. Figure 5 As shown, a U-shaped portion may be provided at one end of the upper transfer plate 201 close to the main chamber, and a sample holder 100 is placed on the U-shaped portion. The main chamber sample transfer assembly 300 includes a lifting base 301 and a transfer upper portion 302 disposed above the lifting base 301. As a possible implementation, the method provided in the embodiment of the present disclosure can drive the transfer upper portion 302 to rise through the lifting base 301, so that the transfer upper portion 302 lifts the sample holder 100 from the gap in the U-shaped portion, thereby removing the sample holder 100 from the exchange chamber sample transfer assembly 200. As an example, an I-shaped portion is provided at one end of the transfer upper portion 302 close to the exchange chamber 10, and the I-shaped portion matches the U-shaped portion; when the lifting base 301 lifts the transfer upper portion 302, the I-shaped portion lifts the sample holder 100 from the U-shaped portion.

[0126] As a possible implementation, after the main chamber sample transfer component 300 can remove the sample holder 100 from the exchange chamber sample transfer component 200, the embodiment of the present disclosure can control the exchange chamber sample transfer component 200 to move back to the exchange chamber 1. Specifically, the exchange chamber sample transfer component 200 in the embodiment of the present disclosure can move the transfer upper plate 201 and the transfer bottom plate 202 relative to each other, so that the transfer upper plate 201 moves away from the main chamber sample transfer component 300 until the transfer upper plate 201 reaches the exchange chamber 1. It should be noted that after the transfer upper plate 201 reaches the exchange chamber 1, if the sample to be operated and the sample holder 100 have completely passed through the isolation valve 3, then the isolation valve 3 can be closed at this time. However, in some embodiments, due to the large size of the sample to be operated, although the transfer upper part 302 has lifted the sample holder 100, the sample holder 100 or the sample to be operated has not completely passed through the isolation valve 3, so the isolation valve 3 cannot be closed at this time.

[0127] It should be noted that the controller corresponding to the main chamber sample transfer component 300 can move the sample holder 100 to the carrier plate of the displacement stage 21 through the main chamber sample transfer component 300. If the size of the sample to be operated in the embodiment of the present disclosure is large, after the main chamber sample transfer component 300 moves the sample holder 100 to the carrier plate of the displacement stage 21, the carrier plate can be moved to perform multiple exposures on the sample to be operated on the sample holder 100. If the sample to be operated has a slight relative sliding when the carrier plate is moved, it will affect the effect of splicing the multiple exposure results. Moreover, after the relative sliding is formed, it takes a long time to recover stability, which is usually more than 30 minutes, resulting in extremely serious splicing errors and time waiting for samples to be operated that are spliced ​​for large-area exposure such as silicon wafers.

[0128] like Figure 5 As shown, in order to suppress the slight relative sliding of the sample holder 100 on the carrier plate 402, a conical positioning portion 401 is provided on the carrier plate 402 of the translation stage 21 in the embodiment of the disclosure, and a positioning hole corresponding to the conical positioning portion 401 is provided at the lower portion of the sample holder 100. Figure 6 As shown, three conical positioning portions 401 may be provided on the loading plate 402 provided in the embodiment of the present disclosure, and the three conical positioning portions 401 are arranged in a triangular shape.

[0129] As a possible implementation, the main chamber sample transfer assembly 300 in the embodiment of the present disclosure can move the sample holder 100 onto the conical positioning portion 401 of the sample carrier 402 of the translation stage 21, and the conical positioning portion 401 is inserted into the positioning hole of the sample holder 100. It should be noted that the combination of the conical positioning portion and the positioning hole in the embodiment of the present disclosure can suppress the relative sliding of the sample holder 100 when the sample carrier 402 moves, thereby reducing the stitching error after exposure and the waiting time during exposure.

[0130] As a possible implementation, Figure 7 As shown, the conical surface of the conical positioning portion 401 provided in the embodiment of the present disclosure may be provided with multiple steps at different levels. The present disclosure has found that the conical surface provided with multiple steps at different levels has a better effect of suppressing the relative sliding of the sample holder 100 when the carrier plate 402 moves than the smooth conical surface. The present disclosure provides multiple steps at different levels on the conical surface of the conical positioning portion 401, which can further reduce the stitching error after exposure and the waiting time during exposure. As an example, the height difference between the multiple steps at different levels can be less than or equal to 0.1 mm.

[0131] In the embodiment of the present disclosure, the main chamber sample transfer assembly 300 can slide relative to the lifting base 301 and the upper transfer portion 302, so that the upper transfer portion 302 moves to the first target position in the direction close to the translation stage 21. The embodiment of the present disclosure can also control the sample carrier 402 to move to the second target position in the direction close to the main chamber sample transfer assembly 300. After the upper transfer portion 302 moves to the first target position and the carrier 402 moves to the second target position, the sample holder 100 is located above the conical positioning portion 401. Then, the present disclosure can also control the lifting base 301 to lower the upper transfer portion 302, so that the sample holder 100 on the upper transfer portion 302 is placed on the conical positioning portion 401 of the carrier 402 of the translation stage 21, and the conical positioning portion 401 is inserted into the positioning hole of the sample holder 100.

[0132] In actual applications, the upper conveyor portion 302 may not move, and the sample holder 100 may move to the top of the conical positioning portion 401 only by moving the carrier plate 402 to the second target position. Alternatively, the carrier plate 402 may not move, and the upper conveyor portion may move to the top of the conical positioning portion 401 only by moving the upper conveyor portion to the first target position, and the sample holder 100 may move to the top of the conical positioning portion 401, which is not limited in the embodiments of the present disclosure.

[0133] In some possible embodiments, after the main chamber sample transfer assembly 300 moves the sample holder 100 onto the loading plate 402 of the translation stage 21, the embodiment of the present disclosure may close the isolation valve 3. It should be noted that after the sample holder 100 moves onto the loading plate 402 of the translation stage 21, the sample to be operated and the sample holder 100 have completely passed through the isolation valve 3, and the isolation valve 3 may be closed at this time.

[0134] In summary, the linkage transmission device provided by the embodiment of the present disclosure transmits the sample to be operated for the first time through the exchange chamber sample transfer component 200, and the main chamber sample transfer component 300 is provided with a lifting function. By utilizing the lifting function of the main chamber sample transfer component 300 and the U-shaped portion on the exchange chamber sample transfer component 200, the main chamber sample transfer component 300 in the embodiment of the present disclosure can remove the sample to be operated on the exchange chamber sample transfer component 200, and transmit the sample to be operated for the second time. In this way, the linkage transmission method provided by the embodiment of the present disclosure sets a multi-stage transmission, and the multi-stage transmission can shorten the distance of the single-stage transmission, thereby shortening the guide rail length of each sample transfer component, and can reduce the transmission accuracy caused by the deformation of the guide rail due to the excessive length, thereby improving the transmission accuracy and stability of the sample to be operated in the electron beam exposure. Moreover, the embodiment of the present disclosure is provided with a conical positioning portion with multiple steps at different levels on the conical surface on the carrier, and the positioning portion can better move the relative sliding of the sample holder 100 when the carrier moves, reducing the splicing error after exposure and the waiting time during exposure.

[0135] like Figure 2 As shown, the electron beam exposure system in the embodiment of the present disclosure further includes an electron gun module 23, an electron gun control subsystem 41, and an exposure machine control subsystem 42, and the electron gun control subsystem 41 is electrically connected to the exposure machine control subsystem 42 and the electron gun module 23; wherein:

[0136] The exposure machine control subsystem 42 is used to generate a vector scanning signal and send the vector scanning signal to the electron gun control subsystem 41;

[0137] The electron gun control subsystem 41 is used to generate a deflection control signal for controlling the electron gun scanning coil 25 to deflect the electron beam based on the vector scanning signal, so as to control the electron gun module 23 to move the electron beam based on the deflection control signal.

[0138] The exposure machine control subsystem 42 includes an exposure machine scanning generator 422 and a beam gate controller 421, and the beam gate controller 421 is electrically connected to the beam gate module 24; wherein:

[0139] The exposure machine scanning generator 422 is used to generate a vector scanning signal.

[0140] The beam gate controller 421 is used for closing the deflection action of the beam gate module 24 with respect to the electron beam in response to the displacement stage 21 moving to a first set position corresponding to a target scanning point that needs to be exposed, and performing electron beam exposure on the sample on the displacement stage 21 at the target scanning point; and, in response to the displacement stage 21 moving to a second set position corresponding to a non-target scanning point that does not need to be exposed, opening the deflection action of the beam gate module 24 with respect to the electron beam based on the generated high-voltage signal, and avoiding electron beam exposure on the sample on the displacement stage 21 at the non-target scanning point.

[0141] In practical applications, such as Figure 3 As shown, when the control center 4 controls the beam gate controller 421 to turn off the electron beam 27, a vector scanning signal is used to control the exposure machine scanning generator 422 to control the scanning coil 25 to deflect the electron beam 27 to achieve exposure. Here, the control center 4 also needs to control the displacement stage 21 to cooperate with the beam gate assembly to turn off the electron beam 27 and move.

[0142] The specific scanning and exposure principles can be found in the above description and will not be elaborated here.

[0143] like Figure 2 As shown, the electron beam exposure system here also includes a displacement compensation module 26 for correcting the displacement deviation of the displacement stage 21 so that the displacement deviation between two adjacent exposed sub-patterns is less than a preset deviation value. The correction principle will not be described in detail here.

[0144] In the description of this specification, the description with reference to the terms "some possible embodiments", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure, and the above terms do not necessarily represent the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0145] About the method flow chart of the embodiment of the present disclosure, some operations are described as different steps performed in a certain order. Such a flow chart is illustrative and not restrictive. Some steps described in this article can be grouped together and performed in a single operation, or some steps can be divided into multiple sub-steps, and some steps can be performed in an order different from that shown in this article. The various steps shown in the flow chart can be implemented in any way by any circuit structure and / or tangible mechanism (for example, by software running on a computer device, hardware (for example, a logical function implemented by a processor or a chip), etc., and / or any combination thereof).

[0146] Those skilled in the art will appreciate that, in the method described in the above specific implementation, the writing order of each step does not mean a strict execution order, and the specific execution order of each step should be determined by its function and possible internal logic.

[0147] Based on the same inventive concept, an electron beam exposure device corresponding to the electron beam exposure method is also provided in the embodiment of the present disclosure. Since the principle of solving the problem by the device in the embodiment of the present disclosure is similar to the above-mentioned electron beam exposure method in the embodiment of the present disclosure, the implementation of the device can refer to the implementation of the method, and the repeated parts will not be repeated.

[0148] Reference Figure 8 , which is a schematic diagram of an electron beam exposure device provided by an embodiment of the present disclosure, the device includes: an acquisition module 210, a determination module 220, an exposure module 230 and a splicing module 240; wherein,

[0149] An acquisition module 210 is used to acquire a plurality of sub-patterns to be exposed, wherein the plurality of sub-patterns to be exposed are obtained by dividing the pattern to be exposed into a matrix according to the size of the electron gun scanning area;

[0150] A determination module 220, for determining, for each sub-pattern to be exposed, a vector scanning signal corresponding to the sub-pattern to be exposed, wherein the vector scanning signal indicates a target scanning point to be exposed;

[0151] The exposure module 230 is used for controlling the movement of the electron beam based on the determined vector scanning signal in response to the movement of the translation stage to the set position corresponding to each sub-pattern to be exposed, and performing electron beam exposure on the sample on the translation stage at the target scanning point to determine the sub-pattern after exposure;

[0152] The splicing module 240 is used to splice the exposed sub-patterns determined by the sub-patterns to be exposed to obtain the exposed pattern.

[0153] In a possible implementation, the electron beam exposure system includes an electron gun module, an electron gun control subsystem, and an exposure machine control subsystem; the exposure module 230 is specifically used to control the movement of the electron beam based on the determined vector scanning signal according to the following steps:

[0154] The determined vector scanning signal is sent to the electron gun control subsystem through the exposure machine control subsystem, so that the electron gun control subsystem generates a deflection control signal for controlling the electron gun scanning coil to deflect the electron beam based on the vector scanning signal;

[0155] The electron gun module is controlled to move the electron beam based on the deflection control signal.

[0156] In a possible implementation, the electron beam exposure system further includes a beam gate module, and the exposure machine control subsystem includes a beam gate controller; the exposure module 230 is specifically used to perform electron beam exposure on the sample on the translation stage at a target scanning point according to the following steps:

[0157] In response to the translation stage moving to a first set position corresponding to a target scanning point, the beam gate controller turns off the deflection action of the beam gate module with respect to the electron beam, and performs electron beam exposure at the target scanning point on the sample on the translation stage;

[0158] Also includes:

[0159] In response to the translation stage moving to a second set position corresponding to a non-target scanning point, a high voltage signal generated by a beam gate controller turns on the beam gate module to deflect the electron beam, thereby avoiding electron beam exposure of the sample on the translation stage at the non-target scanning point.

[0160] In a possible implementation, the exposure machine control subsystem includes an exposure machine scanning generator; a determination module 220 is specifically used to determine the vector scanning signal corresponding to the sub-pattern to be exposed according to the following steps:

[0161] The exposure machine scan generator generates a vector scanning signal corresponding to the sub-pattern to be exposed.

[0162] In one possible embodiment, the electron beam exposure system also includes a displacement compensation module; and also includes: a correction module 250, which is used to perform displacement deviation correction on the displacement stage through the displacement compensation module after determining the exposed sub-pattern, so that the displacement deviation between two adjacent exposed sub-patterns is less than a preset deviation value; and control the displacement stage to move to a set position corresponding to the next sub-pattern to be exposed after the displacement deviation correction is completed.

[0163] In a possible implementation manner, the exposure module 230 is further configured to determine that the translation stage moves to a set position corresponding to each sub-pattern to be exposed according to the following steps:

[0164] For each sub-graphic to be exposed, determining the center coordinates of the sub-graphic to be exposed;

[0165] Determine the translation stage coordinates matching the center coordinates from a pre-stored translation stage coordinate comparison table;

[0166] The set position corresponding to the sub-pattern to be exposed to which the translation stage moves is determined based on the determined translation stage coordinates.

[0167] In a possible embodiment, the electron beam exposure system further includes a linkage sample transfer module and a transfer module 260 for transferring the sample to the translation stage through the linkage sample transfer module before the translation stage moves to a set position corresponding to each sub-pattern to be exposed.

[0168] It should be noted that the device in the embodiment of the present disclosure can implement each process of the embodiment of the aforementioned method and achieve the same effects and functions, which will not be repeated here.

[0169] The present disclosure also provides an electronic device, such as Fig. 9 , which is a schematic diagram of the structure of an electronic device provided by an embodiment of the present disclosure, includes: a processor 310, a memory 320, and a bus 330. The memory 320 stores machine-readable instructions executable by the processor 310 (for example, Figure 8 The machine-readable instructions corresponding to the acquisition module 210, the determination module 220, the exposure module 230 and the stitching module 240 in the device are executed, etc. When the electronic device is running, the processor 310 communicates with the memory 320 through the bus 330, and the following processing is performed when the machine-readable instructions are executed by the processor 310:

[0170] Acquire a plurality of sub-patterns to be exposed, wherein the plurality of sub-patterns to be exposed are obtained by dividing the pattern to be exposed into a matrix according to the size of the electron gun scanning area;

[0171] For each sub-graphic to be exposed, determining a vector scanning signal corresponding to the sub-graphic to be exposed, wherein the vector scanning signal indicates a target scanning point to be exposed;

[0172] In response to the displacement stage moving to a set position corresponding to each sub-pattern to be exposed, the electron beam is controlled to move based on the determined vector scanning signal, and the sample on the displacement stage is subjected to electron beam exposure at a target scanning point to determine the exposed sub-pattern;

[0173] The exposed sub-patterns determined by the sub-patterns to be exposed are spliced ​​to obtain the exposed pattern.

[0174] The present disclosure also provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the electron beam exposure method described in the above method embodiment are executed. The storage medium can be a volatile or non-volatile computer-readable storage medium.

[0175] The present disclosure also provides a computer program product that carries a program code. The program code includes instructions that can be used to execute the steps of the electron beam exposure method described in the above method embodiment. For details, please refer to the above method embodiment, which will not be repeated here.

[0176] The computer program product may be implemented in hardware, software or a combination thereof. In one optional embodiment, the computer program product is implemented as a computer storage medium. In another optional embodiment, the computer program product is implemented as a software product, such as a software development kit (SDK).

[0177] Each embodiment in the present disclosure is described in a progressive manner, and the same or similar parts between the various embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device, equipment, and computer-readable storage medium embodiments, since they are basically similar to the method embodiments, their descriptions are simplified, and the relevant parts can be referred to the partial description of the method embodiments.

[0178] The apparatus, equipment and computer-readable storage medium provided in the embodiments of the present disclosure correspond one-to-one to the method. Therefore, the apparatus, equipment and computer-readable storage medium also have similar beneficial technical effects as the corresponding methods. Since the beneficial technical effects of the methods have been described in detail above, the beneficial technical effects of the apparatus, equipment and computer-readable storage medium will not be repeated here.

[0179] It should be understood by those skilled in the art that the embodiments of the present disclosure can be implemented in the form of methods and apparatus (devices or systems), or computer-readable storage media. Therefore, the present disclosure can be implemented in a complete hardware implementation, a complete software implementation, or an implementation that combines software and hardware. Moreover, the present disclosure can be implemented in the form of a computer-readable storage medium implemented on one or more computer-usable storage media (including but not limited to disk storage, read-only compact disk storage (CD-ROM), optical storage, etc.) containing computer-usable program code.

[0180] The present disclosure is described with reference to the flowchart and / or block diagram of the method, device (equipment or system) and computer-readable storage medium according to the embodiment of the present disclosure. It should be understood that each process and / or box in the flowchart and / or block diagram, and the combination of the process and / or box in the flowchart and / or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device produce a device for implementing the functions specified in one or more processes in the flowchart and / or one or more boxes in the block diagram.

[0181] These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce a product including an instruction device, wherein the instruction device implements the functions specified in one or more processes in the flowchart and / or one or more boxes in the block diagram.

[0182] These computer program instructions may also be loaded onto a computer or other programmable data processing device so that a series of operational steps are executed on the computer or other programmable device to produce a computer-implemented process, whereby the instructions executed on the computer or other programmable device provide steps for implementing the functions specified in one or more processes in the flowchart and / or one or more boxes in the block diagram.

[0183] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0184] The memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash memory (Flash RAM). The memory is an example of a computer-readable medium.

[0185] Computer-readable media include permanent and non-permanent, removable and non-removable media, and information storage can be achieved by any method or technology. Information can be computer-readable instructions, data structures, modules of programs, or other data. Examples of computer-readable storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory, read-only memory, electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, CD-ROM, digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. In addition, although the operations of the disclosed method are described in a specific order in the accompanying drawings, this does not require or imply that these operations must be performed in this specific order, or that all the operations shown must be performed to achieve the desired results. In addition, some steps can be omitted, multiple steps can be combined into one step, and / or one step can be decomposed into multiple sub-steps.

[0186] Although the spirit and principle of the present disclosure have been described above with reference to several specific embodiments, it should be understood that the present disclosure is not limited to the disclosed specific embodiments, and the division of various aspects does not mean that the features in these aspects cannot be combined. The present disclosure is intended to cover various modifications and equivalent arrangements included in the spirit and scope of the attached claims.

Claims

1. An electron beam exposure method, characterized in that: Applied to a control center of an electron beam exposure system, the method comprises: Acquire a plurality of sub-patterns to be exposed, wherein the plurality of sub-patterns to be exposed are obtained by dividing the pattern to be exposed into a matrix according to the size of the electron gun scanning area; For each of the sub-patterns to be exposed, determining a vector scanning signal corresponding to the sub-pattern to be exposed, wherein the vector scanning signal indicates a target scanning point to be exposed; In response to the displacement stage moving to a set position corresponding to each of the sub-patterns to be exposed, the electron beam is controlled to move based on the determined vector scanning signal, and the sample on the displacement stage is subjected to electron beam exposure at the target scanning point to determine the exposed sub-pattern; The exposed sub-patterns determined by the sub-patterns to be exposed are spliced ​​to obtain the exposed pattern.

2. The method according to claim 1, characterized in that The electron beam exposure system includes an electron gun module, an electron gun control subsystem, and an exposure machine control subsystem; the electron beam movement is controlled based on the determined vector scanning signal, including: The determined vector scanning signal is sent to the electron gun control subsystem through the exposure machine control subsystem, so that the electron gun control subsystem generates a deflection control signal for controlling the electron gun scanning coil to deflect the electron beam based on the vector scanning signal; The electron gun module is controlled to move the electron beam based on the deflection control signal.

3. The method according to claim 2, characterized in that The electron beam exposure system further includes a beam gate module, and the exposure machine control subsystem includes a beam gate controller; the electron beam exposure of the sample on the translation stage at the target scanning point includes: In response to the translation stage moving to a first set position corresponding to the target scanning point, the beam gate controller turns off the deflection action of the beam gate module with respect to the electron beam, and performs electron beam exposure at the target scanning point on the sample on the translation stage; Also includes: In response to the translation stage moving to a second set position corresponding to a non-target scanning point, the beam gate module is activated by a high voltage signal generated by the beam gate controller to deflect the electron beam, thereby avoiding electron beam exposure of the sample on the translation stage at the non-target scanning point.

4. The method according to claim 2, characterized in that: The exposure machine control subsystem includes an exposure machine scanning generator; the determining of the vector scanning signal corresponding to the sub-pattern to be exposed includes: The exposure machine scan generator generates a vector scanning signal corresponding to the sub-pattern to be exposed.

5. The method according to any one of claims 2 to 4, characterized in that The electron beam exposure system further includes a displacement compensation module; after determining the exposed sub-pattern, the method further includes: The displacement compensation module is used to correct the displacement deviation of the displacement stage, so that the displacement deviation between two adjacent exposed sub-patterns is less than a preset deviation value; After the displacement deviation correction is completed, the displacement stage is controlled to move to a set position corresponding to the next sub-pattern to be exposed.

6. The method according to any one of claims 1 to 4, characterized in that Determine the movement of the translation stage to a set position corresponding to each sub-pattern to be exposed according to the following steps: For each of the sub-patterns to be exposed, determining the central coordinates of the sub-patterns to be exposed; Determining the coordinates of the translation stage that match the central coordinates from a pre-stored translation stage coordinate comparison table; The set position corresponding to the sub-pattern to be exposed to which the translation stage moves is determined based on the determined coordinates of the translation stage.

7. The method according to any one of claims 1 to 4, characterized in that The electron beam exposure system further includes a linkage sample transfer module. Before the translation stage moves to a set position corresponding to each of the sub-patterns to be exposed, the method further includes: The sample is transferred to the displacement platform through the linkage sample transfer module.

8. An electron beam exposure system, characterized in that: A control center comprising an electron beam exposure method according to any one of claims 1 to 7 for electron beam exposure.

9. The system according to claim 8, characterized in that It also includes a linkage sample transmission module; The linked sample transfer module is used to transfer the sample from the exchange chamber of the electron beam exposure system to the displacement table in the main chamber of the electron beam exposure system.

10. The system according to claim 9, characterized in that The linkage sample transfer module comprises: an exchange chamber sample transfer component located in the exchange chamber, and a main chamber sample transfer component located in the main chamber; The exchange chamber sample transfer assembly comprises a transfer upper plate and a transfer bottom plate which can slide relative to each other, a sample holder is placed on the transfer upper plate, a chip substrate is placed in the sample holder, and the transfer upper plate is used to move the sample holder to above the main chamber sample transfer assembly; The main chamber sample transfer assembly includes a lifting base and a transfer upper part that can slide relative to the lifting base. The lifting base is used to raise the transfer upper part so that the transfer upper part removes the sample holder from the exchange chamber sample transfer assembly. The transfer upper part is used to move the sample holder to the loading plate of the translation stage.

11. The system according to claim 10, characterized in that The loading plate of the displacement stage is provided with a conical positioning portion fixedly connected to the loading plate, and the lower part of the sample holder is provided with a positioning hole corresponding to the conical positioning portion; The conical positioning portion is used to be inserted into the positioning hole of the sample holder to fix the sample holder on the object carrier.

12. The system according to any one of claims 8 to 11, characterized in that It also includes an electron gun module, an electron gun control subsystem, and an exposure machine control subsystem, wherein the electron gun control subsystem is electrically connected to the exposure machine control subsystem and the electron gun module; The exposure machine control subsystem is used to generate a vector scanning signal and send the vector scanning signal to the electron gun control subsystem; The electron gun control subsystem is used to generate a deflection control signal for controlling the electron gun scanning coil to deflect the electron beam based on the vector scanning signal, so as to control the electron gun module to move the electron beam based on the deflection control signal.

13. The system according to claim 12, characterized in that It also includes a beam gate module, and the exposure machine control subsystem includes a beam gate controller, and the beam gate controller is electrically connected to the beam gate module; The beam gate controller is used for closing the deflection action of the beam gate module on the electron beam in response to the displacement stage moving to a first set position corresponding to a target scanning point to be exposed, and performing electron beam exposure on the sample on the displacement stage at the target scanning point; as well as, In response to the translation stage moving to a second set position corresponding to a non-target scanning point that does not need to be exposed, the beam gate module is turned on based on the generated high-voltage signal to deflect the electron beam, thereby avoiding electron beam exposure of the sample on the translation stage at the non-target scanning point.

14. The system according to claim 12, characterized in that The exposure machine control subsystem includes an exposure machine scanning generator; The exposure machine scanning generator is used to generate the vector scanning signal.

15. The system according to any one of claims 8 to 11, characterized in that It also includes a displacement compensation module; The displacement compensation module is used to perform displacement deviation correction on the displacement stage so that the displacement deviation between two adjacent exposed sub-patterns is less than a preset deviation value.

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