Tiny component, alignment system and mounting method

By configuring magnetic marks on micro components and using magnetic lines for identification and capture, and combining the preset arrangement patterns of the probe and the substrate, the problem of high-precision hybrid integration of micro LED chips in the prior art is solved, and a high-fine whole column and installation is achieved, ensuring the high-fine, high viewing angle and low power consumption effects of the display.

CN119563226APending Publication Date: 2025-03-04TOHOKU MICROTEC
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Patent Information

Application Number
CN202380012090.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-06-02
Publication Date
2025-03-04

AI Technical Summary

Technical Problem

The prior art is difficult to mix and integrate micro LED chips of various different structures with high precision, making it difficult to achieve high-precision, high viewing angle, and low power consumption display effects in the display.

Method used

By configuring magnetic marks on the functional surface of the micro element, using magnetic lines for identification and capture, and combining the preset arrangement patterns of the capture probe and the substrate, a high-fine array and installation of the micro element is achieved.

Benefits of technology

It realizes the unified installation of multiple micro components with high accuracy without reducing yield and throughput, ensuring the orientation accuracy and position alignment of micro components.

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Abstract

The present invention is an array system for arranging a plurality of microelements (XiR (j-1), XiRj, XiR (j + 1),...) of the same size and the same shape at predetermined positions on a mounting substrate. The present invention is provided with a rough array input device including a capture unit having a plurality of capture probes (PiR (j-1), PiRj, PiR (j + 1),...) and a substrate, each of the plurality of capture probes having a capture surface formed by a flat surface, magnetic force line applying parts being provided at each of the capture surfaces, and the substrate having the plurality of capture probes arranged in a preset array pattern. The magnetic force line application unit applies magnetic force lines to the magnetic marks (RiR (j-1), RiRj, RiR (j + 1),...), respectively, and captures a small number of elements.
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Description

Technical Field

[0001] The present invention relates to micro-components whose maximum diagonal length of the main surface of the chip is about 1 mm or less, an array system and a mounting method for the micro-components, and in particular, to an array system and a mounting method suitable for the case of finely mixing and mounting a large number of micro-components with different structures and orientations. Background Art

[0002] Sub-millimeter LED (mini LED), micro LED and other tiny components have the characteristics of high brightness and high contrast, so they are attracting much attention as the next generation of displays suitable for large displays such as outdoor displays, AR glasses, mobile phone displays and other uses. For example, the micro LED display for mobile phones is a self-luminous display, which is composed of 1 pixel by each micro LED chip that emits light of different wavelengths of R (red), G (green), and B (blue) with a side of the chip of less than 50μm. The micro LED chips of R, G, and B are driven by pixels, so that compared with existing liquid crystal displays, it has the advantages of fast response speed, high precision, high viewing angle, and low power consumption (for example, refer to non-patent document 1).

[0003] Here, since the light-emitting layers of the micro LED chips of R, G, and B colors (hereinafter referred to as "RGB") are composed of semiconductor materials with different bandgap widths Eg, it is difficult to monolithically integrate the micro LED elements of different semiconductor materials on one chip. Therefore, when micro LED chips of different structures composed of different semiconductor materials of RGB are manufactured separately and used in RGB pixels to form a display, it is necessary to hybrid integrate the micro LED chips composed of different semiconductor materials (different structures). A technical problem in this hybrid integration is the technology / device with high throughput for mounting a large number of micro LED chips with high precision, such as tiny element chips with a maximum diagonal length of less than tens of μm.

[0004] For example, if a large number of micro LED chips with a side size of about 15 μm are transported to the target backplane, the alignment accuracy (overlay accuracy) of each micro LED chip (electrode width 3 μm) is required to be less than ±1.5 μm, but the alignment accuracy of the existing conveying device (pick-up and placement method) is far less than this specification (throughput 20,000 chips / hour, accuracy within the range of about 35 μm). On the other hand, as the number of pixels of liquid crystal displays increases and the screen size progresses, improvements in yield and throughput must also be achieved. Therefore, it is desired to develop a high-precision installation technology for uniformly transporting and installing a large number of micro LED chips with high precision without reducing the yield and throughput.

[0005] In existing micro LED displays, LED wafers are captured in a stamping manner using intermolecular forces and stacked on display panels. LED wafers sequentially crystallize and grow a multilayer structure including an n-type layer, a light-emitting layer, a p-type layer, etc. on a substrate such as a sapphire substrate using a crystal growth method such as metal organic vapor deposition (MOCVD). However, due to the thickness of each layer constituting the multilayer structure, the luminous intensity and wavelength change sensitively. Therefore, when the micro LED chips cut from the LED wafer are captured at the same time to form a panel, the film thickness distribution during crystal growth appears uneven on the display. In addition, the center value of the luminous wavelength also changes between different wafers. For this reason, it is now necessary to randomly cut micro LED chips from multiple LED wafers, further shuffle these micro LED chips, and then bond the micro LED chips to the drive panel of the display with an accuracy of several μm.

[0006] The inventors have proposed a high-precision mounting technology that uses an alignment tray to enable a plurality of micro components such as micro LED chips to be aligned uniformly with high precision in a simple structure without reducing the yield and throughput (see Patent Document 1). In the method of the invention described in Patent Document 1, one of the four circumscribed edges of the micro component is selected as the integrated moving part. In addition, one of the four inscribed edges formed by the four side wall surfaces of the concave portion of the alignment tray is selected as the integrating edge, so that the circumscribed edge of the integrated moving part (hereinafter referred to as the "integrated edge") is moved toward the integrating edge to uniformly determine the arrangement position.

[0007] However, when shuffling microcomponents, the front and back sides are reversed, and the integrated edges are rotated to move within the range of ±45° centered on 90°, within the range of ±45° centered on 180°, and within the range of ±45° centered on 270°, so that the microcomponents have a random chip orientation. That is, there are 4 circumscribed edges selected as the integrated edges of the microcomponents when viewed from the surface of the microcomponents and 4 circumscribed edges when viewed from the back of the microcomponents, so there are a total of 8 arbitrary points in the selection of the integrated edges. For this reason, the following fact was found: when the microcomponents are captured regardless of the orientation by the existing stamping method, etc., it is difficult to effectively exert the interest of the invention recorded in Patent Document 1. That is, when the micro components are randomly shuffled in a random chip orientation such that the front and back are reversed or the position of the circumscribed edge is rotated within a range of ±45° based on 90°, 180°, 270°, etc., even if the existing micro component capture technology is used and the micro component is put into the alignment tray described in Patent Document 1, it is still impossible to align the chips with an orientation within the desired range.

[0008] Prior Art Literature

[0009] Patent Literature

[0010] Patent Document 1: World Intellectual Property Organization International Publication No. 2022 / 249431

[0011] Non-patent literature

[0012] Non-patent document 1: W. Yifan and 4 others, "Full-Color Realization of Micro-LED Displays", Nanomaterials, October 2020, Vol. 2482, pp. 1-33 Summary of the invention

[0013] Technical problem to be solved by the invention

[0014] The present invention is created to solve the above-mentioned problems, and its purpose is to provide the following: a micro-component that can be positioned with a precise orientation when a plurality of micro-components with different structures that are randomly oriented due to shuffling after cutting out are mixed and installed; an alignment system that precisely selects the orientation of the micro-component and finely arranges it; and an installation method that arranges the micro-components with high precision and installs them.

[0015] Solutions for solving technical problems

[0016] In order to achieve the above-mentioned object, the first mode of the present invention relates to a micro-component having a functional surface, a back surface parallel to the functional surface, and a plurality of circumscribed edges connecting the functional surface and the back surface, wherein the maximum diagonal length of the functional surface is less than 1 mm. The micro-component involved in the first mode of the present invention is, in essence, arranged with a magnetic mark at a specific position of the functional surface, and the magnetic mark is used to identify the functional surface and a specific circumscribed edge among the plurality of circumscribed edges.

[0017] The second mode of the present invention relates to an alignment system for arranging a plurality of microscopic components of the same size and shape according to the first mode at predetermined positions on a mounting substrate. The second mode of the present invention relates to an alignment system, which is mainly composed of a coarse alignment device including a capture unit, wherein the capture unit has a plurality of capture probes and a substrate, wherein the plurality of capture probes respectively have a capture surface formed by a plane, and a magnetic force applying part is provided at each position of the capture surface, wherein the substrate arranges the plurality of capture probes in a predetermined arrangement pattern, and the magnetic force applying part applies magnetic lines of force to the magnetic markers to capture the microscopic components.

[0018] The third embodiment of the present invention is, in essence, a mounting method, comprising: (a) a step of shuffling a group of multiple microscopic components of the same size and shape, wherein the multiple microscopic components have a functional surface, a back surface parallel to the functional surface, and multiple circumscribed edges connecting the functional surface and the back surface, and the maximum diagonal length of the functional surface is less than 1 mm; (b) a step of inserting a plurality of capture probes having a magnetic force applying portion provided at various locations on a capture surface formed by a plane into the group of multiple microscopic components, wherein the magnetic force applying portion applies magnetic lines of force to magnetic labels provided at specific positions on the functional surface, respectively, to capture a plurality of microscopic components of a number equal to the number of the plurality of capture probes; and (c) a step of arranging and mounting the multiple microscopic components captured by the multiple capture probes on a mounting substrate.

[0019] Effects of the Invention

[0020] According to the present invention, even if micro-components with a maximum diagonal length of less than 1 mm on the functional surface become randomly oriented due to shuffling, the respective orientations of a large number of micro-components exceeding about 10,000 can be uniformly mounted on a mounting substrate with high precision without errors. It is possible to provide micro-components that do not reduce the yield and throughput, an arranging system that precisely selects and finely arranges the orientations of the micro-components, and a mounting method that aligns and mounts the micro-components with high precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a plan view schematically illustrating the structure of a micro-element according to an embodiment representing the technical concept of the present invention.

[0022] Figure 2(a) is Figure 1 A cross-sectional view taken along plane C; Figure 2 (b) is to combine Figure 1 The corresponding other structures are cross-sectional views cut along plane C.

[0023] Figure 3A The top view schematically shows a transition state in which the first magnetic force applying portion approaches the first magnetic mark of the first microelement that exists at the position of the first magnetic force applying portion closest to the front end of the first capture probe, so that the first microelement is continuously captured by the first capture probe.

[0024] Figure 3B This is a plan view for explaining the roll axis r in the X-axis direction, the pitch axis p in the Y-axis direction, and the yaw axis y in the Z-axis direction defined at the tip portion of the first capture probe.

[0025] Figure 4A This is a plan view illustrating the structure of a first capture probe used in an array system according to an embodiment representing the technical concept of the present invention.

[0026] Figure 4B For Figure 4A A schematic top view illustrating a first capture surface of a first capture probe is shown.

[0027] Figure 5 A schematic top view illustrating a transition state in which a plurality of first microelements manufactured by cutting a chip region on a wafer after completion of crystal growth are shuffled into a stack, and three first capture probes are inserted, each of which continuously captures the first microelements.

[0028] Fig. 6A This is a schematic top view for illustrating a method in which a first capture unit of a coarse alignment device of an alignment system that constitutes an embodiment representing the technical idea of ​​the present invention is used to rotate the chip using gravity in such a way that the chip orientation of a first microscopic element, which is a red LED, is within a desired range, and the chip orientation is finely adjusted.

[0029] Figure 6B To schematically illustrate a main view of a process, the process is to define the pitch axis of the reference coordinate system (r, p, y) at the front end of the first capture probe, use gravity to pitch the first micro-element around the pitch axis, and the chip orientation of the first micro-element is fine-tuned; the first micro-element in the pseudo-capture stage before adjustment is represented by a double-dotted line.

[0030] Figure 6CIt is a schematic top view, in which the first substrate of the first capture unit is represented by a double-dashed line, and the relationship between the biaxial rotation mechanism constituting the first capture probe and the first substrate is described.

[0031] Fig. 7A A schematic top view is provided for explaining a method in which a second capture unit of a coarse alignment device constituting an alignment system according to one embodiment is used to rotate a chip using gravity in such a way that a second microelement of a green LED becomes within a desired chip orientation, and the chip orientation is finely adjusted.

[0032] Figure 7B A schematic top view is provided for explaining a method in which a third capture unit of a coarse alignment device constituting an alignment system according to one embodiment is used to rotate a chip by using gravity in such a way that a third microelement, which is a blue LED, becomes within a desired chip orientation, and the chip orientation is finely adjusted.

[0033] Fig. 8A It is a schematic plan view for explaining the recessed portion of the fine alignment tray in the mounting method according to one embodiment representing the technical idea of ​​the present invention.

[0034] Figure 8B Corresponding to Fig. 8A The cross-sectional view taken along the plane D is a process cross-sectional view showing a state in which the first conveying unit that has captured a plurality of minute components moves onto the fine alignment tray.

[0035] Fig.9A This is a schematic plan view for explaining a state in which the first microcomponents are dropped into the recesses of the fine alignment tray at a pitch of skipping two using the first capturing unit.

[0036] Fig. 9B This is a schematic plan view for explaining a state in which the second microcomponents are dropped into the recesses of the fine alignment tray at a pitch of skipping two using the second capturing unit.

[0037] Fig. 9C This is a schematic plan view for explaining a state in which the third microcomponents are dropped into the recesses of the fine alignment tray at a pitch of skipping two using the third capturing unit.

[0038] Fig.10 The process cross-sectional view shows a state in which the first, second and third capturing units 13B are used in sequence to roughly arrange the first, second and third microcomponents in the recesses of the fine array tray three times.

[0039] Fig.11AA detailed perspective view of a fine alignment tray is shown for use in an installation method according to an embodiment.

[0040] Fig. 11B To magnify Fig.11A A diagram of a portion of a finely-columned tray.

[0041] Fig. 12A For the purpose of Fig.11A The figure is a diagram for explaining a part of the biaxial swing drive in the cross section of the line XX, and is a diagram showing the action of driving the fine alignment tray so that the micro components are respectively integrated into a corner of the recess of the fine alignment tray.

[0042] Fig. 12B For the purpose of Fig.11A The figure for explaining another part of the biaxial swing drive in the cross section of the YY line is a figure showing the action of driving the fine alignment tray so that the micro components are respectively integrated into a corner of the recess of the fine alignment tray.

[0043] Fig. 12C This is a diagram showing the operation of uniaxially swinging the fine alignment tray to thereby align each of the micro components in a corner of a recess of the fine alignment tray.

[0044] Fig.13 This is a plan view illustrating the structure of a first capture probe used in an array system according to another embodiment of the present invention. DETAILED DESCRIPTION

[0045] Hereinafter, an embodiment representing the technical idea of ​​the present invention will be described with reference to the accompanying drawings. In the description of the accompanying drawings, the same or similar parts are marked with the same or similar figure marks, and repeated descriptions are omitted. However, the accompanying drawings are schematic, and the relationship between thickness and plane size, the ratio of thickness of each layer, etc., are sometimes different from the actual situation. In addition, the drawings may also contain parts with different dimensional relationships and ratios. In addition, the embodiments shown below are illustrative devices and methods for concretizing the technical idea of ​​the present invention. The technical idea of ​​the present invention does not specify the material, shape, structure, configuration, etc. of the constituent parts to the following.

[0046] In addition, the definitions of up and down directions in the following description are only for the convenience of explanation and do not limit the technical concept of the present invention. For example, if the object is rotated 90° for observation, the up and down will be converted to left and right for interpretation, and when it is rotated 180° for observation, the up and down will be reversed for interpretation.

[0047] (Micro components)

[0048] The micro-components according to one embodiment of the technical concept of the present invention are composed of first micro-components (red LEDs) having the same size and shape as each other. iRj 、Second micro-component (green LED) X iGj And the third tiny component (blue LED) X iBj The red LED, green LED and blue LED have different emission wavelengths and therefore have different structures made of different semiconductor materials and cannot be integrated into a single chip. iRj , the second microcomponent X iGj And the third micro-component X iBj In the example of a group, a large number of 10,000 to 20,000 or more chips are mixed and integrated on the mounting substrate. In addition, in this specification, "same size, same shape" means that the shape and appearance are similar to the extent of confusion except for the color of the chip.

[0049] "Different structures" refer to differences in physical and chemical structures. In addition to different semiconductor materials, they also include differences in impurity density and thickness of each layer such as the n-type layer, light-emitting layer, and p-type layer constituting the semiconductor element. Furthermore, they also include electrode materials, the depth of the contact layer to which the electrode material is bonded, and the structure of the alloy between the electrode material and the contact layer. Whether the multilayer structure constituting the n-type layer, light-emitting layer, and p-type layer is a single heterostructure or a double heterostructure is also a structural difference. As a first microelement X constituting a group of microelements involved in one embodiment, iRj , although examples such as Figure 1 Although the illustrated chip has a three-dimensional shape in which the main surfaces parallel to each other are rectangular or square, the chip shape is merely an example, and the main surfaces parallel to each other may be hexagonal or the like.

[0050] Figure 1 In the micro-element composed of a plate-like rectangular parallelepiped or a cube shown in FIG. 1 , the "main surface" is two surfaces whose area is larger than the four side surfaces defining the thickness of the micro-element. If the main surface is a rectangle or a square, the side surfaces adjacent to each other among the four side surfaces of the micro-element intersect at right angles. In this case, the side surfaces are arranged in the following manner. Fig. 8A The recess Q of the fine arrangement tray 14 shown in FIG. 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ... must also be rectangular, but if the main surface is hexagonal, the shape of the recessed portion viewed from above the fine alignment tray 14 must also be hexagonal. Fig. 8A The fine alignment tray 14 shown in FIG. 1 corresponds to the alignment tray described in Patent Document 1.

[0051] In the first tiny component X iRj , the second microcomponent X iGj And the third micro-component X iBj In the case of a three-dimensional shape close to a cube (regular hexahedron), the directions of the thickness of the micro-element are defined as three directions. iRj In the embodiment, among the six faces of a cube, a specific face is defined as a "first functional face". If the face parallel to the first functional face is defined as a "first back face", the definition can be extended to the case of a cube. iGj In the above, among the six faces of the cube, a specific face is defined as the “second functional face”. If the face that is parallel to the second functional face and faces the second functional face is defined as the “second back face”, the definition can be extended to the case of a cube. iBj In the figure, among the six faces of the cube, a specific face is defined as the "third functional face". If the face facing and parallel to the third functional face is defined as the "third back face", the definition can be extended to the case of a cube.

[0052] If this extended definition is applied to LEDs, etc., the "first to third functional surfaces" are, in the case of light-emitting elements such as LEDs, surfaces that emit light, which is an important function of the light-emitting element, and in the case of light-receiving elements, surfaces that receive light, which is an important function of the light-receiving element. If the first to third back surfaces corresponding to the first to third functional surfaces are selected opposite to each other, the respective functions of the corresponding first to third microscopic elements cannot be exerted. In addition, for example, a microscopic element X having a first microscopic element X iRj The light receiving element has the same bandgap width as the second microelement X iGj The light receiving element has the same bandgap width as the third microelement X iBj The light receiving elements with the same bandgap width form an array. If the first tiny element X iRj , the second microcomponent X iGj And the third micro-component X iBj When the emitted light is received in an array, a high-sensitivity color image sensor can be realized.

[0053] In this specification, when there is no need to distinguish "the first to third micro-elements", "the first to third functional surfaces", and "the first to third back surfaces" individually, they are generally expressed as "micro-elements", "functional surfaces", and "back surfaces". As a micro-element involved in one embodiment, for the sake of convenience of explanation, although the red LED, the green LED, and the blue LED are illustrated as a group of micro-elements with different structures, if the micro-elements are in a situation where mixed installation is required, sometimes even one type of micro-part may still be an object, and in this case, it is only expressed as "micro-element". For example, in the case of an ultrasonic element, the surface that emits or receives ultrasound, which is an important function of the ultrasonic element, is the functional surface. For example, in a micro capacitive micromachined ultrasound transducer (cMUT) using micro electromechanical system (MEMS) technology, in most cases, the plane shape of the functional surface is a regular hexagon. In the case of cMUT, the frequency band can be expanded by arranging cMUTs of different structures in which the material of the vibration electrode, the physical properties such as Young's modulus, and the thickness are changed. If the functional surface and the back surface are oppositely selected, the micro element cannot function as an ultrasonic element. If it is a combination of a high-frequency cMUT and a low-frequency cMUT, it becomes a combination of two types of micro elements, a "first micro element" and a "second micro element".

[0054] If the three-dimensional shape of the micro-element involved in one embodiment is a cube or a cuboid, the functional surface and the back surface are connected by four circumscribed edges. In the invention described in Patent Document 1, although it is necessary to select one of the four circumscribed edges of the micro-element as the integrated edge, when the micro-element is shuffled, it becomes impossible to identify the rotation angle of the micro-element, and it becomes impossible to know which of the four circumscribed edges corresponds to the designed integrated edge. The "rotation angle of the micro-element" can be defined as the angle with the normal direction of the functional surface passing through the center of gravity of the micro-element as the rotation center. If the "first integrated edge" is selected from the plurality of first micro-elements X iRj The four corners formed by orthogonal intersection of the four sides of each of the two sides in the three-dimensional Euclidean space are selected as one of the corners defining the integrated moving part of Patent Document 1. Similarly, the "second integrated edge" is selected from the plurality of second microelements X iGj The four sides of each of the three-dimensional Euclidean space are orthogonal to each other and are respectively formed by four corners. In addition, the "third integrated edge" is selected from a plurality of third microelements X iBj The four corners formed by orthogonal four sides of the respective four sides in three-dimensional Euclidean space are selected. In addition, when the "first to third tiny elements" and "first to third integrated edges" are not distinguished separately, they are simply summarized as "tiny elements" and "integrated edges".

[0055] Even if an error within the range of ±45° is allowed, there are 6 faces in the case of a cube, so 6×4=24 types of randomness are generated, and in the case of a rectangular parallelepiped, 2×4=8 types of randomness are generated. 1R1 The upward normal vector of the first functional surface can be correctly chosen as Figure 8B In the upward direction, if the first tiny element X 1R1 The anode electrode 82 disposed on the first back surface 1R1 With cathode electrode 83 1R1 If the orientation is incorrect, it will become impossible to mount on the mounting substrate, or the polarity of the anode and cathode will become opposite. 1R1 When the polarization plane becomes a problem, the crystal orientation of the first microelement needs to be correctly selected. Similarly, in the case of a flat plate structure with a regular hexagonal functional surface, even if an error of ±60° is allowed, there are still 2×6=12 types of arbitrariness.

[0056] Figure 1 As an example of a micro-component according to one embodiment, a first micro-component X, which is a red LED to be mounted in a micro LED display, is schematically shown. iRj Model diagram. Figure 1 , showing the first tiny element X defined as a light emitting element iRj The first functional surface is a top view of the functional surface of the LED. In addition, the green LED installed in the same micro LED display is the second micro component X. iGj And blue LED is the third tiny component X iBj In terms of the semiconductor material (structure), the first microelement X is iRj Same size, same shape (appearance). Figure 1 For example, in the first microelement X iRj In the light-emitting layer, gallium aluminum arsenide (GaAlAs) is mainly used. 1-x Al x As), aluminum gallium indium phosphide (aluminum gallium indium phosphide, (Al 1-x Ga x ) 1-y In y P) and other semiconductor materials.

[0057] On the other hand, in the second microelement X iGj The light-emitting layer uses indium gallium nitride (In 1-x Ga x N), (Al1-x Ga x ) 1-y In y P, zinc telluride (ZnTe) and other semiconductor materials first micro-components X iRj Al 1-x Ga x ) 1-y In y P and the second tiny component X iGj Al 1-x Ga x ) 1-y In y P, components x and y are different. iBj The light-emitting layer uses gallium nitride (GaN), In 1-x Ga x N and other semiconductor materials. The first micro-element X iRj In 1-x Ga x N and the third tiny component X iBj In 1-x Ga x N, the composition x is different. The following Figure 2 to Figure 5 Although the first micro-element X iRj However, when the semiconductor material is different, the second microelement X iGj And the third micro-component X iBj The same is true in terms of Figure 2 to Figure 5 In terms of Figure 1 The same applies to the case where repeated descriptions are omitted.

[0058] exist Figure 1 Although the first micro-element X is shown as an example iRj The first functional surface of the first microelement X is a rectangular having four sides. iRj The planar shape of the first functional surface can also be a polygon such as a square, rectangle, pentagon, hexagon, etc. As defined at the beginning of this specification, a "micro-element" refers to an element whose maximum diagonal length of the functional surface is less than 1 mm. In the case of a square or rectangle, since the two diagonals are equal in length, they are both the maximum diagonal length. In the case of a regular pentagon, the five diagonals are equal in length, so any one of them is the maximum diagonal length. In the case of a regular hexagon, the maximum diagonal length is defined as 3, and the diagonal length shorter than the maximum diagonal length is 6. In the case of a regular heptagon, the maximum diagonal length is defined as 8, and the diagonal length shorter than the maximum diagonal length is defined as 6.

[0059] When the functional surface is a rectangle having four sides, a specific side among the four sides is defined as an "identification side". Then, in the peripheral portion of the functional surface near the identification side, a plurality of Figure 1 The first circular magnetic mark R iRj Similarly, when the functional surface is a polygon with a shape of pentagon or more, a specific side among the multiple sides constituting the polygon is defined as an "identification side", and a circular first magnetic marker R is placed on the peripheral portion of the functional surface near the identification side. iRj The pattern is locally arranged on the first microelement X iRj .exist Figure 1 In the example shown, the first circular magnetic marker R is placed in the peripheral portion near the center of the identification side. iRj The pattern is set on the first microelement X iRj , but this is only an example. The first magnetic marker R iRj The position of is not limited to the vicinity of the center of the identification edge. That is, if it can be combined with the first microelement X iRj The first magnetic marker R is associated with the identification edge iRj When the position of the pattern is determined by a rule, even if the first magnetic marker R iRj Configured anywhere on the functional surface, the identification edge can be uniquely specified.

[0060] In one embodiment, the first microelement X iRj In the first functional surface, the first tiny element X is occupied in order to play iRj The area required for the main function of the device is defined as the "first function occupied area". The function occupied area, for example, in the case of a light-emitting element such as an LED, corresponds to the light-emitting surface, and in the case of a light-receiving element, corresponds to the light-receiving surface. Assuming that a shielding film is used on the light-emitting surface in order to perform the function as a light-emitting element, the area where the window portion in the shielding film is opened is the "first function occupied area". In the case of an ultrasonic element, the ultrasonic emission area or receiving area corresponds. Similarly, in the second microelement X iGj In the second functional surface, the second micro-element X iGj The active area of ​​the main function is defined as the "secondary function occupied area". iBj In the third functional surface, the third micro-element X iBjThe active area of ​​the main function is defined as the "third function occupied area". And, when the "first to third function occupied areas" are not distinguished separately, they are simply summarized as the "function occupied area". In addition, the micro-component that is the object of the present invention may also be a module (composite component) or the like, which is a module in which multiple semiconductor components and MEMS components are installed in a micro-mold structure with a maximum diagonal length of less than 1 mm and further installed in a micro-mold structure of less than 700 μm. For example, when a micro-component as a module (composite component) includes three light-emitting components inside a mold structure, three function occupied areas are defined on a functional surface that becomes the surface of the mold structure. In addition, when a micro-component as a module includes four light-emitting components inside a mold structure, four function occupied areas are defined on one functional surface.

[0061] The first magnetic marker R iRj It is sufficient that the first identification edge is associated with the first functional surface and is arranged at the periphery of the first functional surface outside the first functional surface occupied area. For example, if the first functional surface occupied area is a circle, then Figure 1 Different from the example of FIG. 1 , the four corners of the rectangular first functional surface become the first magnetic markers R required from the viewpoint of area efficiency. iRj For the second microelement X iGj And the third micro-component X iBj , and the first tiny element X iRj The same rules define the position and pattern (size, shape) of the "second magnetic mark" and the "third magnetic mark", respectively. Moreover, in this specification, when there is no need to distinguish the "first to third tiny elements" and the "first to third magnetic marks" separately, they are only generally expressed as "tiny elements" and "magnetic marks". In the case where a tiny composite element in which multiple semiconductor elements or multiple MEMS elements are installed inside a structure with a maximum diagonal length of less than 1 mm is a tiny element, a majority of tiny elements of one type are mixed and installed, thus becoming a "tiny element" and "magnetic mark" expression. In the case where the composite element includes three light-emitting elements and defines three functional occupied areas on one functional surface, and in the case where it includes four light-emitting elements and defines four functional occupied areas, the number of possible configuration locations of the magnetic mark increases.

[0062] The magnetic marker can be formed, for example, of a ferromagnetic thin film composed of an element selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn), gadolinium (Gd), terbium (Tb) and dysprosium (Dy). In addition, the magnetic marker can be formed of an alloy containing an element selected from the group consisting of ferromagnetic substances, for example, a thin film composed of an alloy of Fe-Co series, Fe-Ni series, Fe-Si series, Fe-Dy-Tb series, Fe-Ga series, Fe-Si-Al series, etc., or a laminated film composed of an element selected from the group consisting of ferromagnetic substances.

[0063] A micro-element according to one embodiment, for example, Figure 2 (a) shows an example in which the first microelement X is formed. iRj Ga 1-x Al x As etc. are stacked on the semiconductor chip 21 with a silicon oxide film (SiO 2 The insulating film 22 may be a composite film composed of two or more dielectric films, or may include a multilayer film composed of layers having different purposes. Figure 2 As shown in (a), when the insulating film 22 is a composite film, the resin film present in the uppermost layer may extend from the first functional surface in a manner that also includes the surface other than the first functional surface, and the surface other than the first functional surface is covered and sealed. Figure 2 When explaining the structure of (a), first, Figure 2 (a) On the insulating film 22 shown as an example, a ferromagnetic thin film such as Fe or Co is deposited on the entire surface by vacuum evaporation, sputtering, sol-gel, chemical vapor deposition (CVD), pulse laser deposition (PLD), plating, etc. Then, the ferromagnetic thin film is selectively etched using photolithography technology to remove the first magnetic mark R iRj For selective etching of ferromagnetic thin films, after patterning the photoresist film using photolithography technology, dry etching or wet etching can be performed using the photoresist film as an etching mask. For dry etching, trifluoromethane (CHF 3 ), methane (CH4) or carbon tetrafluoride (CF 4 ) and other reactive ion etching (RIE) methods.

[0064] In addition, for the selective wet etching of ferromagnetic thin films, ferric chloride (FeCl 3 ) solution or an aqueous solution of an inorganic acid or an organic acid. Figure 2As shown in (b), the first magnetic mark R can also be locally arranged by embedding a ferromagnetic thin film in a recessed portion such as a damascene groove provided on the surface of the insulating film 22, and then flattening it by chemical mechanical polishing (CMP). iRj pattern. Figure 2 As an example, when the insulating film 22 is a composite film including a resin film, the resin film present in the uppermost layer may be covered and sealed in a manner including the surface other than the first functional surface. Figure 2 The same is true for the case (a). Figure 6B The first microelement X during the alignment adjustment shown in FIG. iRj The ease of rotational movement, as shown in Figure 2 (a) Generally, the first magnetic marker R iRj A structure in which the pattern protrudes from the upper surface of the insulating film 22 is more preferred. Figure 2 In the case of embedding in the surface of the insulating film 22, the surface of the insulating film 22 may be cut and etched after a CMP process to form the first magnetic mark R. iRj A step portion slightly protruding from the surface of the insulating film 22 .

[0065] First Micro Component X iRj When the first functional surface of is a square, which specific side among the four sides is selected as the first identification side is basically free, but it needs to be determined according to the following Fig. 8A The first micro-component X is defined in advance in relation to the fine alignment tray 14 described above. iRj When the first functional surface of is a regular polygon with a shape of pentagon or more, it is basically free to select which specific side among the multiple sides constituting the regular polygon as the first identification side. iRj The first functional surface is a rectangle, and any one of the two short sides is selected as the first identification side, with the following description Fig. 6A and 6B The first tiny component X iRj The advantage of fine adjustment of the chip orientation by rotation is that it is easy to carry out the subsequent insertion process into the recessed part of the finely aligned tray.

[0066] In addition, in this specification, the first microelement X iRj The "chip orientation" indicates the direction of the normal vector of the first functional surface, and indicates the direction of a three-dimensional vector from the center of gravity of the chip toward a specific circumscribed edge (defined in Patent Document 1 as an integrated edge) among a plurality of circumscribed edges connecting the first functional surface and the first back surface. The direction of the normal vector of the first functional surface is Figure 1 In the example shown, the selection is along Figure 1The second micro-component X iGj And the third micro-component X iBj The meaning of chip orientation is also defined in the same way in other aspects. iRj When the first functional surface is an unequal-sided polygon with a long axis and a short axis, any side that will become a short side is selected as the first identification side, which makes it easier to identify the first micro-component X. iRj The chip orientation adjustment process and the processing of loading into the fine alignment tray. In addition, in the case of a module in which multiple semiconductor elements are installed in a structure, similarly, the direction of the normal vector of the functional surface of the module and the direction of the vector from the center of gravity of the module to the selected integrated edge of the multiple circumscribed edges connecting the functional surface and the back of the module are defined as "module orientation". In addition, when "chip orientation" and "module orientation" are not distinguished, they are simply referred to as "orientation".

[0067] The first magnetic marker R iRj The remaining area provided in the peripheral portion of the first functional surface which does not hinder the first functional performance occupied area is necessarily small. iRj The area depends on the magnetic attraction and the first tiny element X iRj Therefore, although it depends on the strength of the magnetic force, it is preferred to make it a minimum small area that can maintain the attraction force due to the magnetic force. Figure 6B As shown in FIG. 1 , the torque generated by gravity g is used to make the first microelement X iRj When the pitch rotation is performed around the pitch axis p, only the first magnetic marker R iRj A small area of ​​the pattern portion is contacted with the first capture probe P iRj , which reduces the friction force that becomes the resistance to pitch rotation. The first magnetic marker R iRj The pattern is not limited to a circle, and may be a regular hexagon, a regular octagon, a regular dodecagon, a regular icosagon, or other polygon. Figure 6B When the ease and reliability of pitch rotation in the orientation adjustment is improved, the first magnetic marker R iRj In the pattern, regular polygons with many sides close to a circle are preferred. Even if the mask level is a regular polygon, as long as the final pattern of the photolithography process is considered, the regular polygon with many sides will become a circle. Therefore, considering the manufacturing process, the regular polygon with many sides is a figure equal to a circle.

[0068] Figure 3A A transition state is schematically shown, in which the current exists in the vicinity of the first capture probe P iRj The first microelement X is located at the position of the first magnetic force applying portion provided at the front end iRj, because the first magnetic force applying part is close to the first magnetic mark R iRj , so that the first tiny element X iRj By the first capture probe P iRj That is, the first micro-element X iRj , the first capture probe P iRj The front end of the iRj , the first magnetic force lines of the first magnetic force applying part are on the first magnetic mark R iRj , so that due to the first magnetic field line, only the first tiny element X iRj The first magnetic field line is set to have a strength that can clearly identify the first micro-component X. iRj The strength of selective attraction can be clearly distinguished between the functional surface and the back surface. “Clearly distinguish the strength of the functional surface and the back surface” means that when the chip is placed in an orientation with the functional surface as the lower surface and the back surface as the upper surface, the first capture probe P iRj When approaching from the upper surface side, the first capture probe P iRj The first magnetic marker R located on the lower surface can be iRj The first microelement X before the state shown by the solid line iRj The chip orientation is shown by a double-dashed line. The first micro-element X iRj , which is used to change the Euler angles of the internally rotated object coordinate system In this way, the object is rotated three-dimensionally by magnetic force and is captured by attraction through the first magnetic force lines of the first magnetic force applying part.

[0069] Figure 3B The first capture probe P formed into a three-dimensional shape is shown. iRj The external rotating reference coordinate system (r, p, y) defined by the front end has a roll axis r in the X-axis direction, a pitch axis p in the Y-axis direction, and a yaw axis y in the Z-axis direction. Figure 3B The "pitch axis", "roll axis" and "yaw axis" in the image are defined by learning the example that the roll axis is taken as the X axis, the pitch axis is taken as the Y axis, and the yaw axis is taken as the Z axis in aircraft and automobiles. The first capture probe P is orthogonal to the pitch axis p. iRj The surface of the front end of the first capture probe P is defined as a "pitch surface". iRj The front end of the iRj , so that the first tiny element X iRj The magnetic force causes the roll angle θ to be applied to the roll axis r and the pitch angle θ to be applied to the pitch axis p. A pitch rotation is performed on the yaw axis y, and a yaw rotation of a yaw angle ψ is performed on the yaw axis y.

[0070] Figure 3A and Figure 3B Schematically showing a transition state, the transition state is selected to exist in the first micro-element X through the first magnetic line iRj The first magnetic mark R on the functional surface side iRj , because the Euler angle Finally, the first capture probe P is locally located in the transition state of the three-dimensional rotation generated by the magnetic force. iRj The front end portion is a planar first capture surface 125 (refer to Figure 4B . ) and the first microelement X iRj The first functional surface of the first capture surface 125 is parallel to the first magnetic marker R iRj The first microelement X is closely attached to the substrate, and the substrate enters a stable "quasi-capture stage". iRj The functional surface and back make it possible to avoid the mistake of turning the case back upside down.

[0071] In this manual, Figure 3A and Figure 3B The transitional stage in which the first capture surface 125 is not parallel to the first functional surface is called a "pseudo-capture stage", and is distinguished from the quasi-capture stage in which the first capture surface 125 is parallel to the first functional surface due to magnetic force. Figure 4B The first capture surface 125 of the cutout structure is taken as an example, so it is assumed that the first capture surface provided on the end surface of the cylinder and the first magnetic marker R iRj When in close contact, the first microelement X iRj The first functional surface is formed to be orthogonal to the central axis of the long side direction of the cylinder. In addition, when the first capture surface is set on the chamfered end surface of the cylinder, if the first magnetic marker R iRj In close contact with the first capture surface, the first micro-element X iRj The first functional surface is formed so as to be obliquely intersecting with the central axis in the long side direction of the cylinder.

[0072] In the quasi-capture stage where the first capture surface 125 and the first functional surface become parallel, the first magnetic marker R iRj , without the first tiny element X iRj The chip is reversed in the wrong way and is captured by the first capture probe P iRj However, the first microelement X in the quasi-capture stage iRj The chip orientation may vary from Fig. 8A The fine alignment tray 14 shown in the figure is rotated about 180° in the predetermined optimal direction. iRj At the front end, there is a first microelement X that rotates more than ±45° in the quasi-capture stage. iRjWhen the chip is placed on the fine alignment tray 14, it is necessary to orient the chip so that the rotation angle falls within the range of ±45° or less. Fig. 6A , Fig. 7A 7b, although it is shown that a circular first magnetic mark R is provided in the peripheral portion near the center of the first identification side. iRj In the example of fine-tuning the chip orientation in the case of a pattern, this is only an example. As another example, it is assumed that the first magnetic marker R is configured at the end side of the first identification side. iRj In the case of Fig. 6A In the examples of FIG. 1 and FIG. 2 , the chip orientation is finely adjusted using a direction tilted by 45° as a reference.

[0073] As defined, the first microelement X iRj The "chip orientation" indicates the orientation from the first tiny element X iRj The center of gravity of the chip is located from the first tiny element X iRj The directions of the vectors of the first integrated edges are selected from the four corners formed by the four sides of the orthogonal three-dimensional Euclidean space. iGj The "chip orientation" indicates that from the second tiny element X iGj The center of gravity of the chip is located toward the second tiny component X iGj The directions of the vectors of the second integrated edges are selected from the four corners formed by the four sides of the orthogonal three-dimensional Euclidean space. iBj The "chip orientation" indicates that from the third tiny element X iBj The center of gravity of the chip is located toward the third tiny component X iBj The directions of the vectors of the third integrated edges selected from the four corners formed by the four sides of the device being orthogonal in three-dimensional Euclidean space.

[0074] In the quasi-capture phase, the first magnetic marker R iRj The first capturing surface 125 is in close contact with the first capturing surface 125 and is parallel to each other so that the first micro-element X is described. iRj The internal rotation object coordinate system of the random chip orientation becomes the first capture probe P iRj The external rotation reference coordinate system (r, p, y) defined by the front end of the Figure 3A and Figure 3B In the example shown, when an error of ±45° is allowed, the 2×4=8 kinds of randomness of the micro-component formed into a rectangular parallelepiped shape can be obtained by the first capture probe P iRj The reference coordinate system (r, p, y) represents the state of the quasi-capture stage, and the arbitrariness becomes smaller.

[0075] (Rough alignment device constituting the alignment system)

[0076] An embodiment of the present invention relates to an alignment system, comprising a rough alignment device and a fine alignment device, wherein the rough alignment device comprises Fig. 6A The first capture unit 13R shown, Fig. 7A The second capture unit 13G shown, Figure 7B The third capture unit 13G shown in the figure comprises a fine array device Fig. 8A The finely arranged trays shown in the following figure will be Fig. 6A The first capture unit 13R is shown in Figure 3A The first capture probe P iRj , a plurality of them are arranged on the first base of the plate-like rectangular parallelepiped. And, Figure 1 The first magnetic marker R shown in A iRj , for the first capture probe P iRj The first magnetic field line at the front end of the first microelement X is captured to iRj The first capture probe P iRj The front end portion may be locally configured with a first magnetic marker R iRj It is preferred that the plane of the first magnetic force applying portion of the same size as the pattern is used as the first capturing surface. To arrange the locally existing first magnetic force applying portion on the first capturing surface, there are two techniques including using a permanent magnet made of a soft magnetic body and using an electromagnet.

[0077] The first capture probe P iRj The front end is required to be the first micro-element X iRj The first magnetic marker R iRj The same small structure is used, so a small disk-shaped permanent magnet is embedded in the first capture probe P iRj The structure of the front end portion is relatively easy. Among them, the permanent magnet is embedded in the first capture probe P iRj In the case of the front end portion, as shown later Figure 8B The process of placing the tray into the recessed portion in a fine arrangement requires a demagnetization process using a permanent magnet under an alternating electric field, similar to the magnetic recording device. iRj When the permanent magnet is reused, it is necessary to magnetize the permanent magnet.

[0078] The disk-shaped permanent magnet is selectively embedded in the first capture probe P iRj When the tip of the first magnetic force applying portion is formed as the first capture probe P outside the first capture surface, iRjThe main structure of the magnetic field probe P is preferably a circular plate made of low magnetic permeability materials such as polytetrafluoroethylene (PTFE), aluminum (Al), and copper (Cu). For soft magnetic permanent magnets, iron (Fe)-silicon (Si) alloys, Fe-aluminum (Al) alloys, and Fe-Al-Si alloys can be used. Alternatively, Fe-nickel (Ni) alloys called high-permeability alloys and Fe-cobalt (Co) alloys called Permendur can also be used as the first capture probe P embedded in the magnetic field probe P. iRj Furthermore, amorphous materials such as Fe-Si-boron (B) can also be used as the first capture probe P embedded in the iRj A soft magnetic permanent magnet is provided at the front end portion.

[0079] In order to make the demagnetization / magnetization process unnecessary, as another structure of the first capture probe used in the entire array system according to one embodiment, the first capture probe P iRj In the example in which the first magnetic force applying portion at the front end of the electromagnet exposes the core (iron core) 121 of the electromagnet, as shown in Figure 4A As shown in Figure 4A As shown, the first capture probe P iRj The electromagnet is constituted by a coil 122 formed by MEMS technology and a core 121 provided to penetrate the inside of the coil 122 .

[0080] The thicker the outer diameter of the electromagnet core 121, the higher the magnetic flux density. Therefore, the outer diameter of the core 121 is formed into a cylindrical shape with a thickness close to the inner diameter of the coil 122 at the position where the coil 122 is directly wound. Figure 4A Generally, the portion of the left side of the cylindrical portion away from the part where the coil 122 is directly wound is formed into a plate shape (quadrangular prism shape) and extends toward the lower left direction. Figure 4A The shape of the core 121 extending in the lower left direction is for example only and is not limited to Figure 4A For example, let Figure 4B The electromagnet housing portion 126 is a cylinder with a flat end. When the end of the cylinder exposes the end of the core 121 to form a first capture surface, Figure 4A The quadrangular prism shown may be replaced by a circular cylinder.

[0081] Figure 4A The structure shown is used for the first capture probe P of the entire array system according to one embodiment. iRj In the structure of the electromagnet, the side with the largest area among the four sides of the rectangular parallelepiped (quadrangular prism) of the core 121 extending toward the lower left direction is defined as the "bottom surface" of the core 121. According to this definition, Figure 4BThe structure can expose the bottom surface of the core 121 on the first capture surface 125 which is a plane, and the bottom surface and the first capture surface 125 form the same plane, which is manifested as the bottom surface being "aligned with the outer surface" of the first capture surface 125.

[0082] The core of the electromagnet 121, high permeability alloy, Permendur iron-cobalt alloy (Permendur), iron-based amorphous alloy, is the easy magnetization axis <100> A single crystal of iron oriented in the direction <100> It is desirable to use a directional electromagnetic steel sheet or a soft magnetic material such as an iron-based nanocrystalline alloy powder in which the orientation of the grain boundaries is aligned in the direction. When using a single crystal of iron or a directional electromagnetic steel sheet, a single crystal is made. <100> When the direction becomes the long side direction of the core 121, the first magnetic field lines in the first capture surface 125 away from the position of the coil 122 can be strengthened. The variable current source 123 and the switch S are connected in series to the coil 122, and the current flowing through the coil 122 can be controlled by the variable current source 123. The variable current source 123 can be accommodated in the Fig. 6A The first capturing unit 13R shown in the figure may be located inside the rectangular plate-shaped block of the first base.

[0083] In the case of a structure in which the core of the electromagnet is exposed from the main body of the low magnetic permeability material, Figure 1 The first magnetic marker R iRj , is also detected by the first capture probe P iRj The first magnetic force applying part of the first capture surface 125 is locally (limited) provided at the front end in a specific surface orientation, and selectively captures with magnetic force. In the case of an electromagnet, the leakage of the first magnetic field line is still large even when it is covered with a low magnetic permeability material, so the local existence of the first magnetic field line is more difficult than in the case of a permanent magnet. In addition, Figure 4B The first capture surface 125 of the L-shaped incision structure shown in the figure is only for the first capture probe P iRj The first magnetic force applying part is an example of an example in which the first capture probe P is formed by the core 121 of the electromagnet. iRj It is also possible to form a cylindrical structure, expose the core 121 that becomes the first magnetic force applying part at the end surface of the cylindrical structure, and use the end surface of the cylindrical structure as the first capturing surface.

[0084] When the core 121 of the electromagnet is exposed in the first magnetic force applying part, for example, the current flowing through the coil 122 is large in the pseudo capture stage before the quasi capture stage, the strength of the first magnetic force line is increased, and the first micro-element X can be easily captured. iRj As shown in Figure 4B Typically, the first capture probe P iRjThe first microelement X is designed as a cylindrical surface (curved surface) as a non-capturing surface except the first capturing surface 125, but the strength of the first magnetic field line is improved. iRj The first micro-components other than the first micro-components may be weakly captured by the non-capturing surface. The reason is that in the case of an electromagnet, even if the non-capturing surface is covered with a low magnetic permeability material, the first magnetic field lines still leak from the non-capturing surface. Alternatively, it is also possible that the first capture probe P iRj The capturing surface captures the first magnetic marker R from the back side. iRj When the strength of the first magnetic field line is made weak, the chip is placed in an orientation such that the functional surface is the lower surface, so that the first magnetic marker R located on the lower surface cannot be captured. iRj When the strength is high, the yield becomes lower.

[0085] Assume that, as predetermined, the first microelement X iRj Except for the case where the first tiny element is intended to be captured simultaneously, such as Figure 5 As shown, the first capture probe P iRj After moving upward to separate the first micro-components from a group, the first capture probe P is moved upward to separate the first micro-components from a group, and then ... iRj After moving upward, the first micro-element X iRj When the current flowing through the coil 122 is reduced by setting the level that does not fall off as the lower limit, the unintentional first micro-element weakly captured by the non-capturing surface can be removed.

[0086] The first capture probe P iRj The capture surface captures the first magnetic marker R from the back side. iRj In the case of a short circuit, the first capture probe P can be iRj The first magnetic marker R is captured from the back side. iRj In addition, there is also a configuration in which even if the first capture probe P is removed from the upper surface side, iRj The first magnetic mark R on the lower surface is located at the functional surface when approaching iRj The first capture probe P at the level that is still not captured iRj In this case, it becomes impossible to capture the first capture probe P iRj The remaining first tiny element X iRj , the first microelement X iRj After the reverse process, the first capture probe P iRj Capture again.

[0087] In addition, when the structure using an electromagnet as the first magnetic force applying portion is adopted, as long as the Figure 6B The orientation adjustment reduces the current flowing through the coil 122, so that the first micro-element X in the capture stage can be targeted. iRj The chip orientation is finely adjusted by the pitch rotation caused by gravity g, which can be made into the state of this capture stage. In the structure using the electromagnet core 121, by cutting off (turning off) the switch S connected in series with the coil 122 and the variable current source 123, Figure 8B The first tiny element X shown iRj It falls into the recess of the fine alignment tray 14. Ferrite can also be used for the core 121, but when using ferrite, it is preferred to use soft ferrite, which becomes a magnet when a magnetic field is applied and returns to its original state when the magnetic field disappears, rather than hard ferrite.

[0088] As a technique using an electromagnet, there can be exemplified the following Figure 4B The first capture probe P iRj Have the Figure 4A The structure of the electromagnet housing portion 126 that houses the coil 122 and the core 121 of the coil 122 is shown. The electromagnet housing portion 126 may be made of a low magnetic permeability material having electrical insulation properties such as fluororesin. Figure 4B In the embodiment, the left end portion is a cylindrical shape that becomes a hemispherical convex portion. And, in a manner including this hemispherical convex portion, the hemispherical convex portion and a part of the cylindrical portion that becomes the hemispherical convex portion side are as shown in Figure 4B Generally, it has an L-shaped step structure in which a part of a hemispherical end surface cylinder is cut from below to near the center so as to expose the first capture surface 125 .

[0089] The area of ​​the first capture surface 125 exposed on the bottom surface of the core 121 is set to be larger than the first micro-element X to be captured. iRj The area is small, so that more than two first micro-components X are not captured on one first capturing surface 125. iRj . The first micro-component X iRj The distance between the first identification edge of the first functional surface and the wall of the low magnetic permeability material constituting the L-shaped step portion defining the end of the first capture surface 125 becomes and is shown in Fig.10 The first tiny component X iRj The right end and the concave portion Q j(i-1) The distance δ from the right side 1 Therefore, if the first capture probe P is not iRjThe length of the first capture surface 125 measured in the long side direction of the first micro-element X iRj The first identification edge of the first functional surface and the first magnetic mark R iRj The distance between the centers is about twice the value of the predetermined clearance length, so the distance δ 1 Fear of becoming bigger.

[0090] As mentioned above, Figure 4B The structure shown is for illustration only. Figure 4B The end side of the electromagnet storage part 126 is set as a hemispherical convex part, but the end of the plane is set as a general cylinder, so that the end of the plane is the first capture surface. When the end of the plane constitutes the first magnetic force applying part, the structure of the L-shaped step part is not necessary. When the end of the core 121 is exposed at the end of the cylinder to form the first magnetic force applying part, Figure 4A The quadrangular prism shown in the figure can be replaced by a cylinder, and the circular first magnetic force applying portion is exposed at the end of the cylinder. Therefore, the outer diameter of the circle of the exposed first magnetic force applying portion is set to be equal to the first magnetic mark R iRj When the outer diameters are the same, Fig.10 The distance δ shown 1 Can be reduced.

[0091] and shown in Figure 4B Unlike the example of FIG. 1 , the end side of the electromagnet housing portion 126 may be provided as a cylinder with a chamfered end (inclined surface) instead of a hemispherical convex portion, so that the inclined surface is an elliptical first capturing surface, and the first magnetic force applying portion is exposed inside the elliptical first capturing surface. In the case where the inclined surface exposes the end of the core 121 and serves as the first magnetic force applying portion, Figure 4A The quadrangular prism that is the core 121 shown in the figure may be replaced by a cylindrical column. Furthermore, the elliptical first magnetic force applying portion is exposed at the end of the cylindrical column, so that the major diameter of the exposed ellipse is equal to the major diameter of the first magnetic mark R. iRj The outer diameter is the same as that of Fig.10 The distance δ 1 Alternatively, the end of the core 121 exposed on the inclined surface may be rounded. Figure 4A The quadrangular prism forming the core 121 shown may be an elliptical prism having an elliptical cross section.

[0092] exist Figure 4B In the structural example shown, the first capture probe P iRjThe bottom surface of the core 121 is exposed as a cylindrical surface (curved surface) except for the flat first capture surface 125. In terms of the first magnetic lines of force leaking out from the first capture surface 125, the magnetic distance between the unintentional first micro-element and the core 121 becomes relatively long, resulting in a structure in which the unintentional first micro-element is difficult to be captured outside the first capture surface 125. As described above, in the case where the end portion perpendicular to the long side direction of the cylinder is made the first capture surface, the cylindrical surface outside the first capture surface becomes a non-capturing surface in which the magnetic distance between the unintentional first micro-element and the core 121 is relatively long, resulting in a structure in which the unintentional first micro-element is difficult to be captured outside the first capture surface. This situation is also the same when the end portion of the cylinder that is beveled is made the first capture surface, and the surface outside the first capture surface becomes a non-capturing surface formed by the cylindrical surface.

[0093] Therefore, to show Figure 4B The structure shown in the example, or other structures having permanent magnets, etc., the first microelement X iRj The first magnetic marker R iRj The patterns are all attracted by the first magnetic force applying part of the first capturing surface 125. Therefore, as long as the first micro-element X is formed in advance iRj The first magnetic mark R is set in association with a first identification edge of a specific edge among the four edges of the first functional surface. iRj The first magnetic mark R iRj The first magnetic marker R iRj The first magnetic mark R is provided in close contact with the first magnetic force applying part. iRj The first tiny component X iRj The first functional surface is parallel to the first capturing surface 125 provided with the first magnetic force applying portion, and the normal direction of the first functional surface can also be defined unambiguously.

[0094] That is, so that Figure 3A , Figure 3B and Figure 5 etc., the first micro-component X iRj The first functional surface and the first identification edge selected on the first functional surface can be captured by the first capture probe P iRj The front end of can be selectively and unambiguously captured. The result of unambiguously defining the first functional surface and the first identification edge is that the first micro-element X that is randomly shuffled iRj Among any chip orientations classified into the eight regions, the chip orientation within the desired range can be captured by the first capture probe P iRj A choice is made, and it is decided unambiguously.

[0095] Figure 5, schematically showing the first micro-element X manufactured by cutting the chip region on the wafer after the crystal growth is completed iRj(j-1) , X iRj , X iRj(j+1) , ... are shuffled. And, a transition state is shown, which is Figure 4A and Figure 4B The first capture probe P is shown in FIG. iRj(j-1) , P iRj , P iRj(j+1) , ..., move to the first tiny element X iRj(j-1) , X iRj , X iRj(j+1) , ..., the first capture probe P jRj(j-1) , P iRj , P iRj(j+1) The first micro-element X corresponding to the first micro-element X to be captured iRj(j-1) , X iRj , X iRj(j+1) The respective transition states are shown in Figure 5 Before the state, there is a first capture probe P iRj(j-1) , P iRj , P iRj(j+1) The first microelement X is inserted into the front end of each of the arrays of iRj(j-1) , X iRj , X iRj(j+1) ,…the process in a pile.

[0096] For example, the first capture probe P iRj(j-1) , P iRj , P iRj(j+1) The front ends of the first micro-component X have been inserted into the iRj(j-1) , X iRj、 X iRj(j+1) , ..., and then stirred quietly at a high density. In the stack, the first capture probe P iRj(j-1) , P iRj , P iRj(j+1) , ..., the respective front ends are moved so that the first magnetic force lines from the respective front ends move the first microelement X located near the respective front ends. iRj(j-1) , X iRj , X iRj(j+1) , ..., respectively, the first magnetic marker R iRj(j-1) , R iRj , R iRj(j+1) , ... to find and attract. And, the first capture probe P iRj(j-1) , P iRj , P iRj(j+1) , ..., from the first microelement X iRj(j-1) , XiRj , X iRj(j+1) , ..., when it is drawn out from the pile, it becomes as shown in Figure 5 The pseudo-capture phase transition state is achieved in a manner that is consistent with the actual state of the image.

[0097] As shown in Figure 3A The Euler angles of the object coordinate system The first tiny element X of the pseudo-capture phase of the three-dimensional rotation process iRj(j-1) , X iRj , X iRj(j+1) , ..., and the state becomes stable in the quasi-trapping stage. iRj(j-1) , X iRj , X iRj(j+1) , ..., undergoing this capture phase of fine-tuning the chip orientation to approach the optimal direction (refer to Figure 6B ) process, and is transported to Fig. 8A Then, the first micro-components X are placed in the recesses of the fine alignment tray 14. iRj(j-1) , X iRj , X iRj(j+1) , ..., from the first capture probe P iRj(j-1) , P iRj , P iRj(j+1) ,……release.

[0098] As described above, a rough alignment device of an alignment system according to one embodiment includes the following Fig. 6A The first capture unit 13R is shown in Fig. 7A The second capture unit 13G is shown in Figure 7B First, when focusing on the first capture unit 13R, Figure 5 Only three first capture probes P are shown. iRj(j-1) , P iRj , P iRj(j+1) The array, in fact, is Fig. 6A The rectangular plate-shaped block shown is the first substrate, which is integrated and mounted on the first substrate using MEMS technology. Fig. 6A An example structure is provided for the first minute element X which will be a red LED. 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 The first capture probe P for capture is positioned in a chip orientation within a desired range. 1R1 , P 1R2 , P 2R1 , P 2R2, P 3R1 , P 3R2 , arranged in a matrix at a predetermined pitch on a first rectangular parallelepiped substrate. Fig. 6A Schematically showing the first capture probes P of the same size, shape, structure and orientation. 1R1 , P 1R2 , P 2R1 , P 2R2 , P 3R1 , P 3R2 The state in which the micro-mirror array is integrated on the first substrate using the same technology as that of MEMS.

[0099] In addition, it should be noted that in order to avoid the complexity and large scale of the graph, Fig. 6A Only the six first capture probes P are shown briefly. 1R1 , P 1R2 , P 2R1 , P 2R2 , P 3R1 , P 3R2 . This corresponds to the number of first minute components (red micro LEDs, etc.) actually required for the LED display, etc., which is the object of installation. Fig. 6A The number of the first capture probes shown in FIG. 1 may also be 10,000 or 1,000,000. Fig. 8A The concave portion Q of the fine alignment tray 14 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., when considering the three colors of RGB, the number may be 30,000 or 3 million. The six first capture probes P shown briefly are 1R1 , P 1R2 , P 2R1 , P 2R2 , P 3R1 , P 3R2 The arrangement pitch is designed to be Fig. 8A The recess Q of the fine alignment tray 14 is shown 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., a first array pattern having an integer multiple (k times) of the pitch in the row direction of. In the case of RGB three colors, k=3, and k may be a positive integer greater than or equal to 2. In the case of a four-color display, k=4.

[0100] For example, in Fig. 6A The first row (the top row) of the main surface of the first substrate formed by the plate-like block is the first capture probe P on the left side. 1R1With the first capture probe P on the right 1R2 2 virtual chips (blank areas) of dashed lines are arranged continuously between the two chips, schematically showing the first arrangement pattern in which two chips are skipped. 1R1 With the first capture probe P 1R2 The arrangement of the concave Q 11 , Q 12 , Q 13 , ..., a first arrangement pattern with a row direction pitch three times that of the first capture probe P on the left. 1R1 In the concave part Q 11 The first capture probe P on the right 1R2 In the concave part Q 14 The positions of the first capture probe P and the second capture probe P are each provided with a long and thin rod-shaped structure extending obliquely toward the lower left direction. 1R1 The first magnetic force applying portion at the front end of the 1R1 And capture the first tiny element X 1R1 , the first capture probe P 1R2 The first magnetic force applying unit passes through the first magnetic marker R 1R2 The first tiny component X 1R2 Capture with the first magnetic field line. Fig. 6A , showing the following: In the rod-shaped first capture probe P 1R1 The first magnetic force applying portion at the front end portion is formed by a first microelement X 1R1 The chip orientation is optimized by rotating the chip using gravity g, and the chip orientation is finely adjusted; 1R2 The first magnetic force applying unit is a first microelement X 1R2 The chip orientation is finely adjusted by rotating the chip using gravity g to achieve the best chip orientation.

[0101] Figure 6B The first capture probe P is shown iRj The first magnetic mark R of the first magnetic force applying portion at the front end iRj The normal line of the position corresponding to the center of the first capture probe P is defined as the "pitch axis" of the reference coordinate system (r, p, y); iRj The first capture surface 125 of the front end portion is defined as a "pitch surface". That is, Figure 6B The following process is schematically shown: the first microelement X iRj Pitch angle due to gravity g around the pitch axis The first tiny element X in the quasi-capture stage iRj The chip orientation is fine-tuned. And Figure 6BThe vertical direction of the paper is the pitch axis of the reference coordinate system (r, p, y). For example, assuming that the first capture probe P iRj The first magnetic force applying unit captures the first micro-element X with the first magnetic force line iRj The chip is quasi-captured in a rectangular chip orientation as indicated by the double-dashed line tilted toward the lower left direction. Figure 6B In the figure, the center of gravity of the double-dashed rectangle tilted toward the lower left direction intersects the pitch axis indicated by the dotted line at right angles, and is tilted clockwise by an angle of 100° relative to the vertical line passing through the pitch axis.

[0102] With respect to the center of gravity of the double-dashed rectangle representing the chip orientation in this quasi-capture phase, the first magnetic marker R iRj The center of the body is the center of rotation, and the gravity g generates a counterclockwise torque. Figure 6B As shown in the figure, when the pitch axis is perpendicular to the vertical line, as long as the magnetic force is slightly weakened compared to the quasi-capture stage, the first capture probe P iRj The first magnetic force applying portion at the front end and the first magnetic marker R iRj The first magnetic mark R iRj The position is the fulcrum and the pitch angle is That is, if the first magnetic force lines of the first magnetic force applying unit are slightly weakened, the double-dashed rectangle representing the chip orientation in the quasi-capture stage will tend to become the first micro-element X shown by the solid line. iRj The chip orientation is rotated in a counterclockwise direction with a pitch angle As a result, the first microelement X iRj The chip orientation is fine-tuned in this capture stage toward the optimal chip orientation required by the design.

[0103] On the contrary, as shown by the two-dot chain rectangle tilted toward the lower right, it is assumed that the center of gravity of the state in the quasi-capture phase is tilted counterclockwise with respect to the vertical line passing through the pitch axis by a pitch angle of The first magnetic marker R is captured with respect to the center of gravity of the double-dashed rectangle representing the chip orientation in this quasi-capture stage. iRj The center of the first capture probe P is the center of rotation, and the gravity g generates a clockwise torque. iRj The first magnetic force applying portion at the front end and the first magnetic marker R iRj The first magnetic mark R iRj The position is the fulcrum and the pitch angle is That is, if the first magnetic force lines of the first magnetic force applying unit are slightly weakened, the double-dashed rectangle representing the chip orientation in the quasi-capture stage will tend to become the first micro-element X shown by the solid line. iRj The chip orientation is rotated in the clockwise direction, so the capture stage is fine-tuned in a direction close to the optimal chip orientation required by the design.

[0104] Fig. 6A and Figure 6B , showing a "parallel mode" such as a closed armpit, which is a first capture probe P iRj The central axis in the long side direction is parallel to the main surface of the rectangular plate-like block that becomes the first base of the first capture unit 13R. Figure 5 The first tiny component X iRj(j-1) , X iRj , X iRj(j+1) , the front end of ... is inserted into the first micro-component X iRj(j-1) , X iRj , X iRj(j+1) The process of stirring the stack of the first substrate at a high density needs to be made into a "branch mode" such as an armpit opening, which forms an angle from the main surface of the rectangular plate-shaped block that becomes the first base. That is, Figure 5 In the state of the first micro-element stack, the first capture probe P iRj(j-1) , P iRj , P iRj(j+1) , ..., the respective front ends are moved, and the first magnetic field lines at the respective front ends are used to move the first micro-element X located near the respective front ends. iRj(j-1) , X iRj , X iRj(j+1) , ..., respectively, the first magnetic marker R iRj(j-1) , R iRj , R iRj(j+1) , ...finding and attracting branching patterns can easily improve productivity.

[0105] In order to simply implement the branching mode, the first capture probe P iRj(j-1) , P iRj , P iRj(j+1) , ... are fixed to the first substrate at a certain branch angle, which is more convenient for users. In the branch mode, if the first capture probe P is fixed iRj(j-1) , P iRj , P iRj(j+1) , ..., their respective branch angles cannot be made into Fig. 6A and Figure 6B However, when the first capture probe P is fixediRj(j-1) , P iRj , P iRj(j+1) , ..., the branch angles of the respective first bases can be determined by tilting the main surface of the first base according to the absolute coordinate system (large domain coordinate system), thereby passing through and Figure 6B Orientation adjustment under equivalent gravity g. That is, Figure 6B The pitch plane shown in FIG. iRj(j-1) , P iRj , P iRj(j+1) , ... are realized by rotating the first base fixed at the branch angle around the yaw axis (y axis), roll axis (r axis), and pitch axis (p axis) of the absolute coordinate system. On the other hand, to realize both the branch mode and the parallel mode, it is necessary to Figure 6C Some rotating mechanisms such as a two-axis rotating mechanism. It is also possible not to use a two-axis rotating mechanism but to use a three-axis rotating mechanism or a single-axis rotating mechanism. In addition, in the case of a two-axis rotating mechanism, Figure 6C The biaxial rotation mechanism shown is merely an example, and various biaxial rotation mechanisms having other structures may be adopted.

[0106] Figure 6C is a schematic top view, in which the rectangular plate-shaped block which will become the first base of the first capture unit 13R is indicated by a double-dashed line, and the first capture probe P iRj The relationship between the biaxial rotation mechanism and the first substrate is described. The rectangular plate-shaped block shown by the double-dashed line is described in an absolute coordinate system (large domain coordinate system). The first capture probe P iRj The biaxial rotation mechanism has a roll axis base 51, which is composed of a rectangular block fixed to a first base indicated by a double-dashed line. Figure 6C An orientation is selected in which the normal direction of two main surfaces facing each other among the six main surfaces constituting the roll axis base 51 is the Z-axis direction, the normal direction of two main surfaces facing each other is the X-axis direction, and the normal direction of the remaining two main surfaces facing each other is the Y-axis direction; however, this is only an example, and the selection of the X-axis direction and the Y-axis direction can be performed arbitrarily. The first capture probe P iRj The dual-axis rotating mechanism is shown in Figure 6C Generally, it further has: a cylindrical roll axis 52, which is arranged on one side of the main surface with the X-axis direction of the roll axis base 51 as the normal direction and extends in the X-axis direction; and a pitch axis base 53, which is composed of a rectangular block with a through hole for accommodating the roll axis 52.

[0107] Although the illustration of the drive system such as the actuator driving the roll rotation is omitted, the pitch-axis base 53 is constructed to be able to roll freely around the roll main axis 52. Since it is constructed to be able to rotate around the roll main axis 52, the normal direction of two main surfaces facing each other among the six main surfaces constituting the pitch-axis base 53 is defined as the X-axis direction. The normal direction of the other two main surfaces facing each other among the six main surfaces constituting the pitch-axis base 53 and the normal direction of the remaining two main surfaces facing each other change due to the roll rotation of the pitch-axis base 53. Figure 6C , for expedient purposes, shows the instantaneous state in which the normal directions of the other two opposing main surfaces among the six main surfaces constituting the pitch-axis base 53 are in the Y-axis direction, and the normal directions of the remaining two opposing main surfaces are in the Z-axis direction.

[0108] Furthermore, the first capture probe P iRj The dual-axis rotating mechanism, such as Figure 6C As shown, it further comprises: a cylindrical pitch main axis 54, which is provided on one side of the main surface with the Y-axis direction of the pitch axis base 53 as the normal direction and extends in the Y-axis direction; and an action rod base axis 55, which has a rectangular portion with a through hole for accommodating the pitch main axis 54 provided on the end side. Since it is constructed to be rotatable around the pitch main axis 54, the normal direction of two opposing main surfaces among the six main surfaces of the rectangular portion constituting the action rod base axis 55 becomes the Y-axis direction as long as the pitch main axis 54 is in the Y-axis direction. Figure 6C Although the pitch axis 54 extends in the Y-axis direction, the normal lines of two opposing main surfaces of the six main surfaces of the rectangular parallelepiped portion constituting the action rod base axis 55 are directed in directions different from the Y-axis direction by the roll rotation of the pitch axis base 53. Figure 6C The pitch principal axis 54 extends in the Y-axis direction, and the long side direction of the rectangular parallelepiped portion of the action rod base axis 55 is the Z-axis.

[0109] Although the driving system such as the actuator driving the pitch rotation is omitted in the figure, since the working rod base shaft 55 is configured to be able to freely pitch and rotate around the pitch main axis 54, the long side direction of the rectangular parallelepiped portion of the working rod base shaft 55 can be changed to a direction different from the Z-axis direction. That is, by the roll rotation of the pitch axis base 53 and the pitch rotation of the working rod base shaft 55, the long side direction of the rectangular parallelepiped portion of the working rod base shaft 55 can be selected and changed. Figure 6C The end of the action rod base axis 55 on the opposite side to the pitch main axis 54 is connected to the electromagnet storage part 126 that stores the electromagnet. The end of the electromagnet storage part 126 on the opposite side to the action rod base axis 55 is a hemispherical convex part. And, in a manner including this hemispherical convex part, the hemispherical convex part and a part of the cylinder on the side of the hemispherical convex part are connected, as shown in FIG. Figure 6CAs shown, a cutout structure is formed to expose the first capture surface 125.

[0110] The first capture surface 125, which is formed by cutting a part of a hemispherical end surface cylinder to near the center, is used to make the core 121 of the electromagnet (see Figure 4A and 4B . ) The first capture surface 125 is a cylindrical surface (curved surface), so the first micro-element X iRj The magnetic distance from the core 121 becomes relatively long, making it difficult to capture the first micro-element X iRj According to this, Figure 3A , Figure 3B and Figure 5 As shown in the figure, the first tiny element X iRj The first magnetic marker R iRj The first capture surface 125 can be selectively captured. This becomes the first micro-element X iRj The first functional surface and the first identification edge selected on the first functional surface can be captured by the first capture probe P iRj The situation described in the reference coordinate system (r, p, y) is equivalent to the first microelement X iRj Situation captured by selected chip orientation.

[0111] By composition Figure 6C By rolling the pitch axis base 53 of the biaxial rotation mechanism shown in the figure and pitching the action rod base axis 55, the surface orientation of the first capture surface 125 can be controlled in an arbitrary direction. According to this, by setting the XYZ coordinates of the reference coordinate system so that the surface parallel to the first capture surface 125 becomes the vertical direction, the accuracy of the first capture surface 125 can be improved. Figure 6B The first magnetic marker R iRj The position of the fulcrum is the pitch angle caused by gravity g As a result, the error of the optimal chip orientation required by the design can be fine-tuned within the range of ±45° or less, making the first micro-component X iRj The chip orientation is the chip orientation in this capture phase.

[0112] Fig. 6A The first capture probe P of the second row of the first capture unit 13R is shown. 2R1 and P 2R2 , in order to make the concave portion Q 21 , Q 22 , Q 23 , ..., three times the row direction pitch, in the first capture probe P 2R1 With the first capture probe P 2R2 , the arrangement model represented by skipping two virtual chips represented by dashed lines is schematically shown.2R1 In the concave part Q 22 The first capture probe P is defined by skipping 2 positions. 2R2 In the concave part Q 25 The positions of the first capture probe P are each set to a thin and long rod-shaped structure extending obliquely toward the lower left direction. 2R1 Arranged in concave Q 22 The first capture probe P 2R2 Arranged in concave Q 25 The topological structure of the position is shown only as an example for expedient explanation and is a property that can be changed depending on the first arrangement pattern specified by the pixel design of the target LED display.

[0113] For example, the first capture probe P 2R1 Arranged in concave Q 21 The first capture probe P 2R2 Arranged in concave Q 24 The topological structure of the position of the first capture probe P is the first arrangement pattern. 2R1 The first magnetic force applying unit passes through the first magnetic marker R 2R1 The first tiny component X 2R1 The first magnetic field line is used for capturing, and the first capture probe P 2R2 The first magnetic force applying unit passes through the first magnetic marker R 2R2 The first tiny component X 2R2 Capture with the first magnetic field line. Fig. 6A , showing a capture phase, the capture phase is a first capture probe P on the left 2R1 The first magnetic force applying part is used as a fulcrum, and the first microelement X is moved by gravity g. 2R1 The chip is tilted toward the pitch angle The first microelement X is rotated in the pitch direction to make 2R1 The chip orientation is fine-tuned in this capture stage. In addition, a capture stage is shown, in which the first capture probe P on the right is used. 2R2 The first magnetic force applying part is used as a fulcrum, and the first microelement X is moved by gravity g. 2R2 The chip is tilted toward the pitch angle The first microelement X is rotated in the pitch direction 2R1 The orientation is fine-tuned after this capture stage.

[0114] Fig. 6A The first capture probe P of the third row of the first capture unit 13R is shown. 3R1 and P 3R2 , in order to make the concave portion Q 31, Q 32 , Q 33 , ..., three times the row direction pitch, in the first capture probe P 3R1 With the first capture probe P 3R2 , a first arrangement model of a virtual chip skipping two dotted lines is schematically shown. 3R1 In the concave part Q 33 The first capture probe P is defined by skipping 2 positions. 3R2 In the concave part Q 36 The positions of the first capture probe P are each set to a thin and long rod-shaped structure extending obliquely toward the lower left direction. 3R1 Arranged in concave Q 33 The first capture probe P 3R2 Arranged in concave Q 36 The first arrangement pattern of the position is only an example for convenience of explanation and is not limited to Fig. 6A Arrangement shown.

[0115] For example, as long as the first capture probe P 2R1 Arranged in concave Q 21 The first capture probe P 2R2 Arranged in concave Q 24 The first capture probe P 3R1 Arranged in concave Q 31 The first capture probe P 3R2 Arranged in concave Q 34 Furthermore, the rod-shaped first capture probe P 3R1 The first magnetic force applying unit passes through the first magnetic marker R 3R1 The first tiny component X 3R1 The first magnetic field line is used for capturing, and the first capture probe P 3R2 The first magnetic force applying unit passes through the first magnetic marker R 3R2 The first tiny component X 3R2 Capture with the first magnetic field line. Fig. 6A , showing the capture phase, the capture phase is the first capture probe P on the left 3R1 The first magnetic force applying unit, the first microelement X 3R1 The present capture stage is shown after the orientation is adjusted by the rotation of the chip due to gravity g. Similarly, the present capture stage is shown, in which the first capture probe P on the right side is 3R2 The first magnetic force applying unit, the first microelement X 3R2 This capture phase is done by fine-tuning the rotation of the chip using gravity g.

[0116] The rough aligning device of the aligning system according to one embodiment includes Fig. 6A In addition to the first capture unit 13R shown, there are Fig. 7A The second capture unit 13G and Figure 7B The third capture unit 13G shown. Fig. 7A The second tiny element X used will be a green LED 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 The second capture unit 13G for capturing the chip orientation within the desired range uses a rectangular plate-shaped block as the second base similarly to the first capture unit 13R. The second capture unit 13G uses the same technology as the micro-mirror array on the second base and has an array pitch of Fig. 8A The recess Q of the fine alignment tray 14 is shown 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 The second capture probe P is designed in a second arrangement pattern with a pitch of 3 times the row direction of 1G1 , P 1G2 , P 2G1 , P 2G2 , P 3G1 , P 3G2 .from Fig. 6A and Fig. 7A By comparing the two, we can know that Fig.9A and Fig. 9B By comparing the first and second arrangement patterns, it can be seen that the first arrangement pattern and the second arrangement pattern are associated with the arrangement of the mounting substrate as patterns with the same pitch and different phases. 1G1 , P 1G2 , P 2G1 , P 2G2 , P 3G1 , P 3G2 They can be constructed with the same size, shape, structure, and orientation as each other.

[0117] In addition, by using MEMS technology, the second capture probe P 1G1 , P 1G2 , P 2G1 , P 2G2 , P 3G1 , P 3G2 , and is configured to be connected to the first capture probe P of the first capture unit 13R 1R1 , P 1R2 , P2R1 , P 2R2 , P 3R1 , P 3R2 The same size, shape, structure and orientation. 1G1 , P 1G2 , P 2G1 , P 2G2 , P 3G1 , P 3G2 They also have Figure 6C As an example, a rotating mechanism and a second capture surface based on MEMS technology are shown. 1R1 , P 1R2 , P 2R1 , P 2R2 , P 3R1 , P 3R2 When there is no rotation mechanism, the second capture probe P 1G1 , P 1G2 , P 2G1 , P 2G2 , P 3G1 , P 3G2 The second capture surface is also flat like the first capture surface 125. In addition, for the sake of convenience, six second capture probes P are shown briefly. 1G1 , P 1G2 , P 2G1 , P 2G2 , P 3G1 , P 3G2 reasons, and Fig. 6A The same is true for the case of LED displays, etc., which are actually required for the second micro-components (green micro-LEDs, etc.), Fig. 7A The number of the second capture probes shown may also be 10,000 or 1,000,000.

[0118] For example, the second capture probes P in the first row of the main surface of the second substrate of the cuboid 1G1 and P 1G2 The arrangement pitch is the concave Q 11 , Q 12 , Q 13 That is, in the second capture probe P 1G1 With the second capture probe P 1G2 The second arrangement pattern represented by skipping two virtual chips represented by dashed lines is schematically shown. 1G1 In the concave part Q 12 The second capture probe P defined by skipping 2 second arrangement patterns 1G2 In the concave part Q15 The positions of the second capture probes P are each provided as a thin and long rod-shaped structure extending obliquely toward the lower left direction. 1G1 The second magnetic force applying unit passes through the second magnetic marker R 1G1 The second tiny element X 1G1 The second magnetic field lines are used for capturing, and the second capture probe P 1G2 The second magnetic force applying unit passes through the second magnetic marker R 1G2 The second tiny element X 1G2 Capture with the second magnetic field line. Fig. 7A In the figure, a method is shown, which is to use the second capture probe P on the left side. 1G1 The second magnetic force applying part is used as a fulcrum, and the second microelement X is moved by gravity g. 1G1 The chip is tilted toward the pitch angle The chip orientation is fine-tuned by pitching and rotating in the direction of the chip. In addition, a method is also shown, which is to use the second capture probe P on the right side. 1G2 The second magnetic force applying part is used as a fulcrum, and the second microelement X is moved by gravity g. 1G2 The chip is subjected to pitch rotation in a manner which is fine-tuned for the chip orientation in this capture stage.

[0119] Shown in Fig. 7A The second capture probe P of the second row of the second capture unit 13G 2G1 and P 2G2 The arrangement pitch is to make a concave portion Q 21 , Q 22 , Q 23 , ..., three times the row direction pitch, in the second capture probe P 2G1 With the second capture probe P 2G2 The second arrangement pattern represented by skipping two virtual chips represented by dashed lines is schematically shown. 2G1 In the concave part Q 23 The second capture probe P defined by skipping 2 second arrangement patterns 2G2 In the concave part Q 26 The positions of the second capture probe P are each set to a thin and long rod-shaped structure extending obliquely toward the lower left direction. 2G1 Arranged in concave Q 23 The second capture probe P 2G2 Arranged in concave Q 26 The second arrangement pattern of the position is only an example for convenience of explanation and is not limited to Figure 6B Arrangement shown.

[0120] For example, the second arrangement pattern specified in the pixel design of the LED display as the object is Fig. 6A The second capture probe P 2R1 Arranged in concave Q 21 The second capture probe P 2R2 Arranged in concave Q 24 When the position of the second capture probe P is specified 2G1 Arranged in concave Q 22 The second capture probe P 2G2 Arranged in concave Q 25 The position of the rod-shaped second capture probe P 2G1 The second magnetic force applying unit passes through the second magnetic marker R 2G1 The second tiny element X 2G1 The second magnetic field lines are used for capturing, and the second capture probe P 2G2 The second magnetic force applying unit passes through the second magnetic marker R 2G2 The second tiny element X 2G2 Capture with the second magnetic field line. Fig. 7A , showing a method, the method, is to use the second capture probe P shown on the left 2G1 The second magnetic force applying part is used as a fulcrum, and the second microelement X is moved by gravity g. 2G1 The chip is tilted toward the pitch angle The chip orientation is fine-tuned by pitching and rotating in the direction of the capture stage. 2G2 The second magnetic force applying part is used as a fulcrum, and the second microelement X is moved by gravity g. 2G2 The chip is subjected to pitch rotation in a manner which is fine-tuned for the chip orientation in this capture stage.

[0121] Fig. 7A The second capture probe P of the third row of the second capture unit 13G is shown. 3G1 and P 3G2 The arrangement pitch is to make a concave portion Q 31 , Q 32 , Q 33 , ..., three times the row direction pitch, in the second capture probe P 3G1 With the second capture probe P 3G2 , a second arrangement pattern skipping two virtual chips with dashed lines is schematically shown. 3G1 In the concave part Q 31 The second capture probe P defined by skipping 2 second arrangement patterns 3G2 In the concave part Q 34 The positions of the second capture probe P are each set to a thin and long rod-shaped structure extending obliquely toward the lower left direction. 3G1 Arranged in concave Q31 The second capture probe P 3G2 Arranged in concave Q 34 The second arrangement pattern of the position is only an example for convenience of explanation and is not limited to Figure 6B Arrangement shown.

[0122] As long as the second capture probe P 2G1 Arranged in concave Q 22 The second capture probe P 2G2 Arranged in concave Q 25 The second capture probe P 3G1 Arranged in concave Q 32 The second capture probe P 3G2 Arranged in concave Q 35 Furthermore, the rod-shaped second capture probe P 3G1 The second magnetic force applying unit passes through the second magnetic marker R 3G1 The second tiny element X 3G1 The second magnetic field lines are used for capturing, and the second capture probe P 3G2 The second magnetic force applying unit passes through the second magnetic marker R 3G2 The second tiny element X 3G2 Capture with the second magnetic field line. Fig. 7A In the figure, a method is shown, which is to use the second capture probe P shown on the left 3G1 The second magnetic force applying part is used as a fulcrum, and the second microelement X is moved by gravity g. 3G1 The chip is pitched and rotated to fine-tune the chip orientation to the current capture stage. Similarly, a method is also shown, which is to use the second capture probe P on the right side. 3G2 The second magnetic force applying part is used as a fulcrum, and the second microelement X is moved by gravity g. 3G2 The chip is subjected to pitch rotation in a manner which is fine-tuned for the chip orientation in this capture stage.

[0123] The rough aligning device of the aligning system according to one embodiment includes Fig. 6A The first capture unit 13R and Fig. 7A In addition to the second capture unit 13G shown, there are Figure 7B The third capture unit 13G shown. Figure 7B As shown, the third tiny element X for the blue LED will be 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2The third capture unit 13B for capturing the chip in the desired range of orientation uses a rectangular plate block as the third substrate, similar to the first capture unit 13R and the second capture unit 13G. The third capture unit 13B uses the same technology as the micro-mirror array on the third substrate and has an arrangement pitch that is determined by the micro-mirror array. Fig. 8A The recess Q of the fine alignment tray 14 is shown 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 The third capture probe P is designed with a third arrangement pattern that is three times the pitch in the row direction of 1B1 , P 1B2 , P 2B1 , P 2B2 , P 3B1 , P 3B2 By using MEMS technology, the third capture probe P 1B1 , P 1B2 , P 2B1 , P 2B2 , P 3B1 , P 3B2 They can be constructed with the same size, shape, structure, and orientation. Fig. 6A , Fig. 7A and Figure 7B By comparing the two, we can know that Figures 9A to 9C By comparing the first to third arrangement patterns, it can be seen that the first to third arrangement patterns are associated on the mounting substrate as patterns with the same pitch and different phases from each other.

[0124] In addition, by using MEMS technology, the third capture probe P 1B1 , P 1B2 , P 2B1 , P 2B2 , P 3B1 , P 3B2 , and is configured to become the first capture probe P of the first capture unit 13R 1R1 , P 1R2 , P 2R1 , P 2R2 , P 3R1 , P 3R2 The same size, shape, structure and orientation. 1B1 , P 1B2 , P 2B1 , P 2B2 , P 3B1 , P 3B2 , and also has Figure 6CAs an example, the biaxial rotation mechanism and the third capture surface are shown. 1R1 , P 1R2 , P 2R1 , P 2R2 , P 3R1 , P 3R2 When there is no rotation mechanism, the third capture probe P 1B1 , P 1B2 , P 2B1 , P 2B2 , P 3B1 , P 3B2 The third capture surface is also a plane like the first capture surface 125 and the second capture surface. Figure 7B Six third capture probes P are shown briefly. 1B1 , P 1B2 , P 2B1 , P 2B2 , P 3B1 , P 3B2 the reasons for the formation of Fig. 6A and Fig. 7A The same as the number of the third micro-components (blue micro-LEDs, etc.) actually required for the LED display, etc., which is the object of installation, Figure 7B The number of the third capture probes shown may also be 10,000 or 1,000,000.

[0125] For example, the third capture probe P of the first row of the main surface of the third substrate of the cuboid 1B1 and P 1B2 The arrangement pitch is to make a concave portion Q 11 , Q 12 , Q 13 , ..., three times the row direction pitch, at the third capture probe P 1B1 With the third capture probe P 1B2 The third arrangement pattern represented by skipping two virtual chips with dotted lines is schematically shown. 1B1 In the concave part Q 13 The third capture probe P defined by skipping two third arrangement patterns 1B2 In the concave part Q 16 The positions of the probes P and P are each provided as a long and thin rod-shaped structure extending obliquely toward the lower left direction. 1B1 The third magnetic force applying unit passes through the third magnetic marker R 1B1 The third tiny component X 1B1 The third magnetic field line is used for capturing, and the third capture probe P 1B2 The third magnetic force applying unit passes through the third magnetic marker R 1B2The third tiny component X 1B2 Capture with the third magnetic field line. Figure 7B In the figure, a method is shown, which is to use the third capture probe P shown on the left. 1B1 The third magnetic force applying part is used as a fulcrum, and the gravity g is used to make the third microelement X 1B1 The chip is pitched and rotated to fine-tune the chip orientation in this capture stage. Similarly, a method is also shown, which is to use the third capture probe P on the right side. 1B2 The third magnetic force applying part is used as a fulcrum, and the gravity g is used to make the third microelement X 1B2 The chip is subjected to pitch rotation in a manner which is fine-tuned for the chip orientation in this capture stage.

[0126] Figure 7B The third capture probe P of the second row of the third capture unit 13B is shown. 2B1 and P 2B2 The arrangement pitch is to make a concave portion Q 21 , Q 22 , Q 23 , ..., three times the row direction pitch, at the third capture probe P 2B1 With the third capture probe P 2B2 The third arrangement pattern represented by skipping two virtual chips with dotted lines is schematically shown. 2B1 In the concave part Q 21 The third capture probe P defined by skipping two third arrangement patterns 2B2 In the concave part Q 24 The positions of the third capture probe P are each set to a thin and long rod-shaped structure extending obliquely toward the lower left direction. 2B1 Arranged in concave Q 21 The third capture probe P 2B2 Arranged in concave Q 24 The third arrangement pattern of the position is only an example for convenience of explanation and is not limited to Figure 6C Furthermore, the rod-shaped third capture probe P 2B1 The third magnetic force applying unit passes through the third magnetic marker R 2B1 The third tiny component X 2B1 The third magnetic field line is used for capturing, and the third capture probe P 2B2 The third magnetic force applying unit passes through the third magnetic marker R 2B2 The third tiny component X 2B2 Capture with the third magnetic field line. Figure 7B In the figure, a method is shown, which is to use the third capture probe P shown on the left. 2B1 The third magnetic force applying part is used as a fulcrum, and the gravity g is used to make the third microelement X2B1 The chip orientation is fine-tuned to the current capture stage by pitch rotation. Similarly, a method is also shown, which is a method of using the third capture probe P on the right side. 2B2 The third magnetic force applying part is used as a fulcrum, and the gravity g is used to make the third microelement X 2B2 The pitch rotation is fine-tuned to the chip orientation for this capture phase.

[0127] Figure 7B The third capture probe P of the third row of the third capture unit 13B is shown. 3B1 and P 3B2 The arrangement pitch is to make a concave portion Q 31 , Q 32 , Q 33 , ..., three times the row direction pitch, at the third capture probe P 3B1 With the third capture probe P 3B2 , a third arrangement pattern of a virtual chip skipping two dotted lines is schematically shown. 3B1 In the concave part Q 32 The third capture probe P defined by skipping two third arrangement patterns 3B2 In the concave part Q 35 The positions are respectively set as elongated rod-shaped structures extending obliquely toward the lower left direction.

[0128] In addition, the third capture probe P 3B1 Arranged in concave Q 32 The third capture probe P 3B2 Arranged in concave Q 35 The third arrangement pattern of the position is only an example for convenience of explanation and is not limited to Figure 6C Furthermore, the rod-shaped third capture probe P 3B1 The third magnetic force applying unit passes through the third magnetic marker R 3B1 The third tiny component X 3B1 The third magnetic field line is used for capturing, and the third capture probe P 3B2 The third magnetic force applying unit passes through the third magnetic marker R 3B2 The third tiny component X 3B2 Capture with the third magnetic field line. Figure 7B , showing a method, which is to use the third capture probe P shown on the left 3B1 The third magnetic force applying part is used as a fulcrum, and the gravity g is used to make the third microelement X 3B1 The chip orientation is fine-tuned to the current capture stage by pitch rotation. Similarly, a method is also shown, which is a method of using the third capture probe P on the right side. 3B2 The third magnetic force applying part is used as a fulcrum, and the gravity g is used to make the third microelement X3B2 The pitch rotation is fine-tuned to the chip orientation for this capture phase.

[0129] As described above, according to the first capturing unit 13R constituting the rough aligning device of the aligning system according to one embodiment, the first micro-element X iRj Chip orientation (from the first tiny element X iRj The center of gravity of the chip is adjusted to the direction of the vector of the first integrated edge) within the range of ±45° or less. Similarly, according to the second capture unit 13G of the rough alignment device constituting the alignment system, the second micro-element X iGj Chip orientation (from the second tiny element X iGj The center of gravity of the chip is adjusted to the direction of the vector of the second integrated edge) within the range of ±45° or less. In addition, according to the third capture unit 13G constituting the rough alignment device, the third micro-element X iBj Chip orientation (from the third tiny element X iBj The center of gravity of the chip is adjusted to the direction of the vector of the third integrated edge within the range of ±45°. iRj , the second microcomponent X iGj And the third micro-component X iBj Although this is an example of adjusting the chip orientation, in the case of a module in which a plurality of semiconductor elements are incorporated into a single structure, the module can also be oriented within a desired angle range.

[0130] (Fine alignment device constituting the alignment system)

[0131] A fine alignment device constituting an alignment system according to an embodiment of the present invention comprises Fig. 8A The finely arranged trays are shown below. Fig. 8A The concave part Q of the finely arranged tray shown in the figure 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., can be assigned separately Fig. 6A , Fig. 7A and Figure 7B The concave portions Q of the first to third arrangement patterns shown 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 That is, as shown schematically in Fig. 8A The cross-sectional view when cut along plane D Figure 8BThe rough alignment device of the alignment system according to one embodiment first moves the first capture unit 13R of the current capture stage to Fig. 8A The fine alignment tray 14 shown in the figure is opposed to each other in such a manner that the main surfaces thereof are parallel to each other. Figure 8B The concave portion Q of the fine alignment tray 14 11 The first tiny element X above 1R1 The left side of the lower side shows the anode electrode 82 1R1 , in the first tiny element X 1R1 The cathode electrode 83 is shown on the right side of the lower side. 1R1 In addition, in Figure 8B The concave portion Q of the fine alignment tray 14 14 The first tiny element X above 1R2 The left side of the lower side shows the anode electrode 82 1R2 , in the first tiny element X 1R2 The cathode electrode 83 is shown on the right side of the lower side. 1R2 .

[0132] The first capturing unit 13R captures the first micro-element X by the first magnetic field line. 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 The position is designed to finely arrange the recess Q of the tray 14 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., a first arrangement pattern (k is a positive integer greater than 2). That is, a large number of first micro-components are uniformly transported to the concave portion Q of the fine alignment tray 14 by electromagnetic adsorption through the first capture unit 13R. ij In the case of the concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., the pitch in the row direction is 3 times the pitch for thinning and capturing and uniformly conveying, so that a concave portion Q in the fine alignment tray 14 can be made ij No more than two first micro-components will be placed inside.

[0133] Furthermore, the rough aligning device of the aligning system according to one embodiment of the present invention maintains the first capture unit 13R relative to the fine aligning tray 14 as follows: Figure 8BThe parallel relationship shown is relatively lowered so that the first capture unit 13R is closest to the surface (upper surface) of the fine alignment tray 14. When the first capture unit 13R is closest to the surface (upper surface) of the fine alignment tray 14, Fig. 8A The multiple recesses Q shown 11 , Q 14 , Q 22 , Q 25 , Q 33 , Q 36 The position of the first microelement X captured by the first magnetic field line in the first capture unit 13R 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 For example, the relative position is adjusted using a laser interferometer, an optical microscope, etc. The concave portion Q of the tray 14 is finely aligned. 11 , Q 14 , Q 22 , Q 25 , Q 33 , Q 36 The position of the first microelement X captured by the first magnetic field line in the first capture unit 13R 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 When the position is aligned, the power supply to the electromagnet of the first capture unit 13R is stopped, and if the magnetic force disappears, the first microelement X 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 Break away.

[0134] Make the first tiny element X 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 When detaching from the first capture unit 13R, Fig.9A As shown, the first microelement X 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 The fine alignment tray 14 is transported and arranged in the concave portion Q 11 , Q 14 , Q22 , Q 25 , Q 33 , Q 36 Using the first capture unit 13R, Figure 6B As shown in the figure, the orientation adjustment using gravity g is performed, and the error of chip orientation is adjusted to within the range of ±45° or less in the direction of this capture stage, so the first micro-component X 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 There is no error of the front and back of the chip being reversed, and the rotation angle of the chip is set to a range of ±45° or less from the optimal value, so that it can be placed in the recess Q of the fine alignment tray 14. 11 , Q 14 , Q 22 , Q 25 , Q 33 , Q 36 Inside.

[0135] On the other hand, a rough alignment device of an alignment system according to an embodiment of the present invention uses Figure 7B The second capture unit 13G shown can thus be used by utilizing and Figure 6B The same gravity g is used to adjust the orientation of the chip in this capture stage. 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 There is no error of the front and back of the chip being reversed, and the rotation angle of the chip is set to a range of ±45° or less from the optimal value, so that it can be placed in the recess Q of the fine alignment tray 14. 12 , Q 15 , Q 23 , Q 26 , Q 31 , Q 34 Inside.

[0136] make Figure 7B The second capture unit 13G in the present capture stage shown moves to Fig. 9B The fine array tray 14 shown, and Figure 8B The second capturing unit 13G captures the second micro-element X by the second magnetic field line. 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2The position is designed to finely arrange the recess Q of the tray 14 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., a second arrangement pattern of an integer multiple (k times) of the pitch of the alignment system. In addition, the rough alignment device of the alignment system according to one embodiment lowers the second capture unit 13G relative to the fine alignment tray 14 so that the second capture unit 13G is closest to the upper surface of the fine alignment tray 14. When the second capture unit 13G is closest to the upper surface of the fine alignment tray 14, Fig. 9B The multiple recesses Q shown 12 , Q 15 , Q 23 , Q 26 , Q 31 , Q 34 and the second microelement X captured by the second magnetic field line in the second capture unit 13G 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 The relative position of the components is aligned using a laser interferometer, optical microscope, etc.

[0137] The recess Q of the fine alignment tray 14 12 , Q 15 , Q 23 , Q 26 , Q 31 , Q 34 and the second microelement X captured by the second magnetic field line in the second capture unit 13G 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 When the position is aligned, the power supply to the electromagnet of the second capture unit 13G is stopped, and if the magnetic force disappears, the second micro-element X 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 detached to the interior of the fine array tray 14. That is, if the second microcomponent X 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 Disengage from the second capture unit 13G, such as Fig. 9BAs shown, the second tiny element X 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 Q is transported and arranged on the fine alignment tray 14 12 , Q 15 , Q 23 , Q 26 , Q 31 , Q 34 Inside.

[0138] Furthermore, the rough alignment device of the alignment system according to one embodiment can use the third capturing unit 13B shown in FIG. 7C to obtain the first capture unit 13B. Figure 6B The same gravity g orientation adjustment as shown in the example is used to fine-tune the chip orientation in this capture stage. 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 There is no error of the front and back of the chip being reversed, and the rotation angle of the chip is set within the range of ±45° or less from the optimal value, so that the chip can be placed in the recess Q of the fine alignment tray 14. 13 , Q 16 , Q 21 , Q 25 , Q 32 , Q 35 Inside.

[0139] The third capture unit 13B in this capture phase shown in FIG. 7C is moved to Fig. 9C The fine arrangement tray 14 shown in FIG. Figure 8B The third capturing unit 13B captures the third micro-element X by the third magnetic field line. 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 The position is designed to finely arrange the recess Q of the tray 14 11 , Q 12 , Q 13 , Q 21 ,……,Q 31, ..., a third arrangement pattern of an integer multiple (k times) of the row direction pitch of . In addition, the rough alignment device of the alignment system according to one embodiment lowers the third capture unit 13B relative to the fine alignment tray 14 so that the third capture unit 13B is closest to the upper surface of the fine alignment tray 14. When the third capture unit 13B is closest to the upper surface of the fine alignment tray 14, Fig. 9C The multiple recesses Q shown 13 , Q 16 , Q 21 , Q 25 , Q 32 , Q 35 and the third micro-element X captured by the third magnetic field line in the third capturing unit 13B. 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 The relative position is aligned using a laser interferometer or the like.

[0140] The recess Q of the fine alignment tray 14 13 , Q 16 , Q 21 , Q 25 , Q 32 , Q 35 and the third micro-element X captured by the third magnetic field line in the third capturing unit 13B. 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 After the position is aligned, the power supply to the electromagnet of the third capture unit 13B is stopped, and if the magnetic force disappears, the third microelement X 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 The third micro-component X is separated from the inner part of the fine alignment tray 14. 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 Disengage from the third capture unit 13B, such as Fig. 9C As shown, the third tiny element X 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2Q is transported and arranged on the fine alignment tray 14 13 , Q 16 , Q 21 , Q 25 , Q 32 , Q 35 Inside.

[0141] As described above, according to the rough alignment device of the alignment system according to one embodiment, the first microelement (red microelement) X 1R1 ~X 3R2 Using the first capture unit 13R, the second microelement (green microelement) X 1G1 ~X 3G2 Using the second capture unit 13G, the third microelement (blue microelement) X 1B1 ~X 3B2 The third capture unit 13B is used to fill the recess Q of the fine alignment tray 14 in three steps. 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , .... According to the first capture unit 13R, the second capture unit 13G and the third capture unit 13B, it is possible to capture a tiny chip with a random chip orientation by the first to third magnetic lines of force without the error of front and back reversal to form a quasi-capture stage, and then fine-tune the chip orientation under gravity g to form the main capture stage. Therefore, there is no error of front and back reversal of the tiny chip, and the deviation of the designed chip orientation of the chip can be set within the range of ±45° or less, and placed in the concave portion Q of the fine alignment tray 14. 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , the interior of…

[0142] The first capturing unit 13R, the second capturing unit 13G and the third capturing unit 13B are used in sequence, and a plurality of (a plurality of) first micro-elements X iRj , the second microcomponent X iGj And the third micro-component X iBj Divided into 3 times Fig.10 As shown in FIG. 1 , the fine alignment tray 14 is placed in the recess Q j(i-1) , Q ji , Q j(i+1) Inside. exist Fig.10 In the figure, the first microelement X is shown iRj , the second microcomponent X iGj And the third micro-component X iBjThe anode electrode and the cathode electrode provided on the lower surface are arranged on the lower side (bottom side) in the concave portion Q. j(i-1) , Q ji , Q j(i+1) Although the reference numerals are omitted, in the anode electrode and the cathode electrode, Figure 8B The first tiny component X 1R1 The anode electrode 82 on the lower side 1R1 With cathode electrode 83 1R1 and the first micro-element X 1R2 The anode electrode 82 on the lower side 1R2 With cathode electrode 83 1R2 same.

[0143] like Fig.10 As shown, the first microelement X iRj The right end of the j(i-1) The right side separation distance δ 1 In addition, if Fig.10 As shown, the second tiny element X iGj The right end of the ji The right side separation distance δ 2 , the third tiny component X iBj The right end of the j(i+1) The right side separation distance δ 3 .exist Fig.10 In the example, δ 1 >δ 2 >δ 3 , but this is just an example. 2 >δ 1 >δ 3 ,δ 3 >δ 2 >δ 1 In various ways, the first microelement X iRj , the second microcomponent X iGj And the third micro-component X iBj Arranged in concave Q with rough precision j(i-1) , Q ji , Q j(i+1) In, therefore in Fig.10 In the process shown, although the position alignment accuracy varies by more than 1 μm, the designed chip orientation deviation is set within the range of ±45° or less.

[0144] The fine alignment device constituting the alignment system according to one embodiment is intended to arrange a large number of cut first micro-components X of 10,000 to 20,000 or more. iRj , the second microcomponent X iGj And the third micro-component XiBj , it can be mounted on the mounting substrate after being aligned with a high-precision pitch of less than 1μm relative to the pattern of the mounting substrate. Figures 9A to 9C In the figure, a simplified schematic representation of a 3×6 matrix is ​​shown for the sake of convenience. In the industrial sense, for example, if i=1 to m, j=1 to n, and m=n=100, then the first microelement X iRj , the second microcomponent X iGj And the third micro-component X iBj Or, when m=n=1000, the total number of first micro-components X iRj , the second microcomponent X iGj And the third micro-component X iBj The total number becomes 3 million.

[0145] Therefore, when the fine alignment tray 14 is illustrated as a more realistic form, the plurality of recessed portions Q of the fine alignment tray 14 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., such as Fig.11A and Fig. 11B As shown, much more Figures 9A to 9C There are many. Fig.11A and Fig. 11B In the embodiment, a plurality of first microelements X having four sides whose adjacent sides intersect each other at right angles are formed. iRj , the second microcomponent X iGj And the third micro-component X iBj Multiple recesses Q for storing each separately 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., according to the plurality of first micro-components X mounted iRj , the second microcomponent X iGj And the third micro-component X iBj The components are arranged according to the layout on the mounting substrate.

[0146] In addition, since a specific layout of a periodic matrix on the mounting substrate is assumed, Fig.11A and Fig. 11B , but only illustrates the matrix-shaped concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31If the specification is to form a non-periodic layout on the mounting substrate, the respective recesses Q of the trays are finely arranged by projecting the pattern of the non-periodic layout of the specification. 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 Therefore, the respective recesses Q of the fine array tray of the present invention are 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., is not limited to Fig.11A and Fig. 11B The arrangement system according to one embodiment selects the respective recesses Q of the fine arrangement tray 14. 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 One of the four inscribed edges formed by the four side wall surfaces of , ... is used as an integrated edge. That is, the concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 One of the four corners where the four side wall surfaces formed by the four sides intersect with each other is Fig.11A and Fig. 11B The selection shown is the concave Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ... respectively, and the integration corners E are selected as the "integration edges" specified in Patent Document 1.

[0147] The "integrated edge" is defined as the concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., one of the corners where the inner wall surfaces of the respective components intersect in the three-dimensional Euclidean space. The drive unit (50X, 50Y), such as Figures 12A to 12C As shown, the fine array tray 14 is swung and driven so that a moving force acts on each of the plurality of rectangular elements, and the moving force causes the plurality of first minute elements X to move. iRj , the second microcomponent X iGj And the third micro-component X iBjThe first to third integrated edges of the respective first to third integrated edges are directed toward the respective recesses Q of the fine alignment tray 14. 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., and moves along the integration edge set by the integration corner E. In the following description, when the "first to third edges to be integrated" are not particularly distinguished, they are simply collectively referred to as "edges to be integrated."

[0148] In addition, in the following Figures 12A to 12C In the description, the first micro-component (red micro-component) X is not distinguished. iRj 、Second micro-component (green micro-component) X iGj And the third tiny component (blue tiny component) X iBj , manifested as "tiny components X iRj , X iGj , X iBj ", for the sake of simplicity, is recorded. The fine alignment tray 14 is used to roughly align a large number of tiny components X with a pitch that has deviations. iRj , X iGj , X iBj Components for high-precision uniform alignment with improved two-dimensional pitch accuracy, such as Fig.11A and Fig. 11B As shown, the main body has a plate shape, and a large number of micro elements X are arranged in a matrix on one side of the main body. iRj , X iGj , X iBj Multiple concave portions Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , .... The fine arrangement tray 14 is shaped like a waffle of baked snacks as a whole. Fig.11A As shown, the fine alignment tray 14 is a quadrilateral with four corners A, B, C, and D, but the concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ...are set to be smaller than the micro-component X iRj , X iGj , X iBj The size is large.

[0149] For example, the concave Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31, ..., the respective sizes of the concave portion Q when viewed as a planar pattern 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., are designed to be longer than the diagonal length of the micro-element X in the corresponding direction. 1R1 , X 1G1 , X 1B1 , X 2B1 ,……,X 3G1 It is preferred that the diagonal lengths of the micro-components X and X are each 50% or more longer. 1R1 , X 1G1 , X 1B1 , X 2B1 ,……,X 3G1 When the size of the concave portion Q is 55 μm (vertical: X direction)×30 μm (horizontal: Y direction)×15 μm (depth), 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., relative to the size of the tiny component X 1R1 , X 1G1 , X 1B1 , X 2B1 ,……,X 3G1 The dimensions of the film may be set to 100 μm (vertical: X direction) × 55 μm (horizontal: Y direction) × 20 μm (depth) so that the vertical / horizontal dimensions are approximately doubled and the depth is larger than the horizontal / vertical dimensions.

[0150] The fine alignment tray 14 is made of a rigid material that is easy to process, such as silicon, ceramics, or metal. Fig. 11B As shown, each concave part Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ... a small rectangular component X is provided on the corner A side 1R1 , X 1G1 , X 1B1 , X 2B1 ,……,X 3G1 , ..., an integrated corner E is selected from the four inscribed edges where the vertical sidewall surface extending in the X-axis direction and the vertical sidewall surface extending in the Y-axis direction intersect at right angles. 11 , Q 12 , Q 13 , Q 21,……,Q 31 , ... having each micro-element X on the corner A side 1R1 , X 1G1 , X 1B1 , X 2B1 ,……,X 3G1 , ..., the case of an integrated corner E of an integrated edge of an integrated edge; however, it can also be set to be not the corner A side, and can have a micro element X at any of the corners B, C, D 1R1 , X 1G1 , X 1B1 , X 2B1 ,……,X 3G1 ,..., and is designed in the manner of a right-angle integration corner E in which an external edge (the edge to be integrated) is integrated.

[0151] Using the first capture unit 13R, the second capture unit 13G and the third capture unit 13B, the micro element X 1R1 , X 1G1 , X 1B1 , X 2B1 ,……,X 3G1 , ..., the respective chip orientations are set within a range of deviation from the optimal value of less than ±45°, so as described in Patent Document 1, the integrated edge can effectively and accurately approach and integrate with the corresponding integrating edge.

[0152] The fine alignment tray 14 is moved by the driving unit (50X, 50Y) to the concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., the positions of the respective integration corners E are located below the gravity direction, and the concave portion Q is swung up and down and left and right. 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , a large number of tiny components X in... 1R1 , X 1G1 , X 1B1 , X 2B1 ,……,X 3G1 The integrated edge of one corner of ... is integrated and arranged in the concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31, ..., the integrating edge of the integrating corner E. By the relationship between the edges to be integrated and the integrating edge, which have angles defined in the same three-dimensional Euclidean space, it is possible to easily perform high-precision uniform alignment of a large number of 10,000 to 20,000 micro components relative to the pattern of the mounting substrate or excellent in two-dimensional pitch accuracy. The fine alignment tray 14 involved in one embodiment is based on the premise that the shape of a large number of micro components is a general square, so each concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 The shape of ,… also becomes a square.

[0153] Fig. 12A 1 is a schematic diagram showing a case where the fine alignment tray 14 is driven to swing with the pitch axis 26X provided along the Y axis provided at the end portion on the corner A side of the fine alignment tray 14 as the rotation axis. Fig.11A Corner A is shown facing toward corner D. On the other hand Fig. 12B FIG. 2 is a schematic diagram showing a case where the fine alignment tray 14 is driven to swing with the roll axis 26Y provided along the X-axis at the end portion on the corner A side as the rotation axis. Fig.11A Corner A is shown facing toward corner B. Fig. 12A As shown, if the pitch axis 26X is used as the rotation axis, the position of the pitch axis 26X is always at the bottom, and the fine array tray 14 is driven to swing using the pitch angle swing drive unit 50X, then the micro components X 1R1 , X 2B1 , X 3G1 , as a tiny component X 1R1 , X 2B1 , X 3G1 The integrated edges of the respective corners are integrated and arranged in a manner set in the concave portion Q 11 , Q 21 , Q 31 The integrated edge of the integrated corner E is formed by the vertical side wall surfaces intersecting at 90°.

[0154] For example, Fig. 12A As shown, for example, the fine alignment tray 14 is tilted to a pitch angle θ relative to a horizontal plane passing through the pitch axis 26X. X = 40°, and the position of the side BC from the corner B to the corner C is raised, for example. When the fine alignment tray 14 is tilted until the pitch angle θ X =40°, Fig. 12A The tiny component X shown 1R1 , X 2B1 , X 3G1The concave part Q 11 , Q 21 , Q 31 The side walls of the respective pitch axes 26X are moved in the direction of the pitch axis 26X. X = 40° as the center, for example, at the pitch angle θ X =45° and pitch angle θ X =35°. Then, while maintaining the pitch angle θ X =40°, if Fig. 12B As shown, the roll shaft 26Y is used as a rotation axis, the roll shaft 26Y is always located at the bottom, and the fine alignment tray 14 is driven to swing using a roll angle swing drive unit 50Y.

[0155] For example, Fig. 12B As shown, for example, the fine alignment tray 14 is tilted to a roll angle θ relative to a horizontal plane passing through the roll axis 26Y. Y = 40°, from Fig.11A The corner D shown rises toward the position of the side DC of the corner C. When the roll axis 26Y is positioned downward and the fine alignment tray 14 is tilted until the roll angle θ is reached Y =40°, Fig. 12B The tiny component X shown 1R1 , X 1G1 , X 1B1 The concave part Q 11 , Q 12 , Q 13 The side walls of the respective rolling axes 26Y are parallel to each other and move in the direction of the rolling axis 26Y. Y = 40° as the center, for example, at the roll angle θ Y =45° and roll angle θ Y =Vibrates between 35°.

[0156] In this way, the chip orientation is fine-tuned by using gravity g. Fig.10 After the rough arrangement shown in the figure, the biaxial swing drive using the pitch axis 26X and the roll axis 26Y is performed so that the corner A side is always located at the bottom. By performing the biaxial swing drive, a large number of 10,000 to 20,000 micro components X iRj , X iGj , X iBj Respectively (refer to Fig.10 ) Accurately select tiny components X iRj , X iGj , X iBj The respective circumscribed edges (integrated edges) are integrated into the concave portion Q p(i-1) , Q pi, Q p(i+1) The two-axis swing drive may first perform a roll rotation around the roll axis 26Y, and then perform a pitch rotation around the pitch axis 26X. In addition, the roll rotation and the pitch rotation may be performed simultaneously.

[0157] Or, if Fig. 12C As shown in FIG. 1 , a rotation axis 26W perpendicular to the diagonal direction of the X-axis and the Y-axis may be provided near the corner A, and the fine alignment tray 14 may be driven to swing in a single axis by a swing driving unit (not shown) with the rotation axis 26W as the center so that the corner A becomes lower than the other corners B, C, and D. That is, by maintaining the rotation axis 26W parallel to the horizontal plane and tilting the fine alignment tray 14 so that the rotation axis 26W is always at the bottom and the diagonal line BD from the corner B to the corner D is at the top, a large number of micro components X of more than 10,000 to 20,000 may be accurately selected. iRj , X iGj , X iBj The first integrated edge of each is connected to the concave portion Q p(i-1) , Q pi , Q p(i+1) The integration of the circumscribed edge lines of the integrated edges formed by the respective integrated corners E can achieve a full row configuration with a certain pitch.

[0158] pass Figures 12A to 12C The swing drive process shown in the figure makes it possible to precisely determine the size of the tiny components X with the same pitch. iRj , X iGj , X iBj Chip orientation and arrangement position, so the tiny component X iRj The anode electrode can be aligned with the mounting substrate with a high precision of less than 1 μm, so that the anode bump connection can be performed. iRj The cathode electrode can be aligned with high precision, so that the bump can be connected to the cathode bump. iGj The anode electrode can be aligned with the mounting substrate with high precision, so that the bump can be connected to the anode bump.

[0159] Thus, according to the fine alignment device constituting the alignment system according to one embodiment, by using the first capturing unit 13R, the second capturing unit 13G, the third capturing unit 13B and the fine alignment tray 14, a large number of 10,000 to 20,000 micro components X can be arranged. iRj , X iGj , X iBjWithout the inversion of the front and back sides or abnormal chip orientation, the chips can be arranged at the same pitch, making it easy and precise to perform high-precision uniform alignment and installation on the mounting substrate. Similarly, even in the case of a module in which multiple semiconductor elements are installed in a mold (structure), it is also possible to perform high-precision uniform alignment and installation on the mounting substrate by arranging them at the same pitch without abnormal module orientation. Therefore, a high-precision installation technology can be provided, which can shuffle tiny components and thus align a large number of tiny components with respect to the pattern of the mounting substrate for high-precision positioning and installation, even in the case of different film thickness distributions during crystal growth or deviations in the light emission wavelengths between wafers.

[0160] (Installation method)

[0161] In a mounting method according to an embodiment of the present invention, a first micro-component (red LED) X iRj 、Second micro-component (green LED) X iGj And the third tiny component (blue LED) X iBj The following is an example of a micro LED display mounted on a mounting substrate. In current micro LED displays, there are technical problems such as uneven color due to uneven light intensity, central wavelength, and wavelength width. This is because the first tiny element X used in micro LED displays iRj , the second microcomponent X iGj And the third micro-component X iBj The characteristics of each component X vary sensitively due to the intra-wafer distribution and inter-wafer distribution exhibited by the changes in the minute film thickness, impurity density, composition, etc. during crystal growth. iRj The light intensity, central wavelength and width of the emission wavelength are different. iGj The light intensity, central wavelength, and wavelength width of the emission wavelength, as well as the third microelement X iBj The light intensity, central wavelength and width of the emission wavelength are also different.

[0162] Therefore, in the current micro LED display, in order to prevent the occurrence of color unevenness, it is not preferred to cut the first micro element X from the chip area on the wafer immediately after the crystal growth step. iRj , the second microcomponent X iGj And the third micro-component X iBj , directly mounted on the mounting substrate. Therefore, it is necessary to cut the first micro-component X iRj , the second microcomponent X iGj And the third micro-component XiBj , they are shuffled once, arranged in a high-precision array from the shuffled state, moved and mounted on a mounting substrate, and electrically connected to electrodes on the mounting substrate.

[0163] That is, in the mounting method according to one embodiment, a plurality of first minute components X having the same size and shape are mounted on the substrate. iRj(j-1) , X iRj , X iRj(j+1) , ... to shuffle, such as Figure 5 As shown, a plurality of first micro elements X are formed iRj(j-1) , X iRj , X iRj(j+1) A plurality of first microscopic elements X iRj(j-1) , X iRj , X iRj(j+1) , ... respectively have a first functional surface as a specific surface having a first functional area, a first back surface parallel to the first functional surface, and a plurality of circumscribed edges connecting the first functional surface and the first back surface, and the maximum diagonal length of the first functional surface is less than 1 mm. Figure 5 Similarly, with a plurality of first micro elements X iRj(j-1) , X iRj , X iRj(j+1) , ... the same size, the same shape, a plurality of second micro elements are shuffled to form a group of a plurality of second micro elements, wherein the plurality of second micro elements have a second functional surface as a specific surface having a second functional area, a second back surface parallel to the second functional surface, and a plurality of circumscribed edges connecting the second functional surface and the second back surface. iRj(j-1) , X iRj , X iRj(j+1) , ... the same size, the same shape, multiple third micro elements are shuffled to form Figure 5 A group of the same multiple third micro-elements shown, wherein the multiple third micro-elements have a third functional surface as a specific surface having a third functional area, a third back surface parallel to the third functional surface, and a plurality of circumscribed edges connecting the third functional surface and the third back surface.

[0164] And, if Figure 5 As shown in FIG. 1 , a plurality of first capture probes P are provided with first magnetic field line applying portions at respective locations on the first capture surface formed by a plane. iRj(j-1) , P iRj , P iRj(j+1) , ..., insert the shuffled first micro elements X iRj(j-1) , X iRj , X iRj(j+1)Similarly, a second magnetic field line applying unit is arranged at each position of the second capturing surface formed by the plane, and the first capturing probe P iRj(j-1) , P iRj , P iRj(j+1) , ... a plurality of second capture probes of the same size and shape are respectively and Figure 5 In the same manner as shown, a group of the shuffled second microscopic elements is inserted. Furthermore, a third magnetic field line applying unit is arranged at each position of the third capture surface formed by the plane, and the first capture probe P iRj(j-1) , P iRj , P iRj(j+1) , ... a plurality of third capture probes of the same size and shape, respectively, and Figure 5 Similarly as shown, a group of the shuffled third plurality of tiny elements is inserted.

[0165] Thus, the plurality of first capture probes P iRj(j-1) , P iRj , P iRj(j+1) , ..., respectively, to the first micro-element X iRj(j-1) , X iRj , X iRj(j+1) , ..., the first magnetic mark R provided at a position other than the first function exertion occupied area of ​​the first functional surface iRj(j-1) , R iRj , R iRj(j+1) , ..., applying the first magnetic field lines. Similarly, the second magnetic field line applying parts of the plurality of second capture probes respectively apply the second magnetic field lines to the second magnetic markers provided at positions outside the second functional performance occupied area of ​​the second functional surface. Furthermore, the third magnetic field line applying parts of the plurality of third capture probes respectively apply the third magnetic field lines to the third magnetic markers provided at positions outside the third functional performance occupied area of ​​the third functional surface.

[0166] As a result, the plurality of first capture probes P iRj(j-1) , P iRj , P iRj(j+1) ,……,like Figure 5 As shown, from a plurality of first micro elements X iRj(j-1) , X iRj , X iRj(j+1) , ..., and a plurality of first capture probes P iRj(j-1) , P iRj , P iRj(j+1) , ... a plurality of first minute elements X of equal number iRj(j-1) , X iRj , X iRj(j+1) , ..., to capture. Similarly, the second magnetic field lines applying parts of the plurality of second capture probes are also respectively connected to Figure 5Similarly, a plurality of second minute elements equal in number to the plurality of second capture probes are captured from a group of a plurality of second minute elements. Furthermore, the third magnetic field line applying parts of the plurality of third capture probes capture a plurality of third minute elements equal in number to the plurality of third capture probes from a group of a plurality of third minute elements.

[0167] Then, if Fig. 6A and 6B As shown, in the first capture unit 13R, a plurality of first capture probes P 1R1 , P 1R2 , P 2R1 , P 2R2 , P 3R1 , P 3R2 A plurality of first minute components X are captured respectively 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 In the state, the gravity g is used to move the plurality of first micro elements X 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 In addition, if Fig. 7A As shown, in the second capture unit 13G, a plurality of second capture probes P 1G1 , P 1G2 , P 2G1 , P 2G2 , P 3G1 , P 3G2 Captured multiple second tiny elements X 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 In the state, the gravity g is used to move the plurality of second micro elements X 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 The orientation of each is fine-tuned. Figure 7B As shown, in the third capture unit 13G, a plurality of third capture probes P 1B1 , P 1B2 , P 2B1 , P 2B2 , P 3B1 , P 3B2 Captured multiple third tiny elements X1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 In the state, gravity g is used to move a plurality of third micro elements X 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 Fine-tune the respective orientations.

[0168] Furthermore, in the plurality of first capture probes P 1R1 , P 1R2 , P 2R1 , P 2R2 , P 3R1 , P 3R2 Fine-tuned multiple first micro components X 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 In the state of their respective orientations, the first capture unit 13R places the plurality of first minute elements X 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 They are uniformly transported to the upper part of the fine alignment tray 14 arranged with a plurality of recesses. Figure 8B As shown, the fine alignment tray 14 and the first capture unit 13R are made parallel to each other and face each other, and the plurality of first minute components X are 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 Furthermore, the first capturing unit 13R places the plurality of first minute components X on each of the plurality of recesses of the fine alignment tray 14 that correspond to the arrangement of the first arrangement pattern. 1R1 , X 1R2 , X 2R1 , X 2R2 , X 3R1 , X 3R2 They are uniformly put in and uniformly stored in the corresponding recessed portions as shown in 19A.

[0169] In addition, in the plurality of second capture probes P 1G1 , P 1G2 , P2G1 , P 2G2 , P 3G1 , P 3G2 Fine-tuning of multiple second micro components X 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 In the state of their respective orientations, the second capture unit 13G places a plurality of second minute elements X 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 are uniformly transported to the upper part of the fine alignment tray 14. And, Figure 8B Similarly, the fine alignment tray 14 and the second capture unit 13G are made parallel to each other and face each other, and the second minute component X is performed. 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 The second capturing unit 13G places the plurality of second minute components X on each of the plurality of recesses of the fine alignment tray 14 corresponding to the second arrangement pattern. 1G1 , X 1G2 , X 2G1 , X 2G2 , X 3G1 , X 3G2 They are uniformly put in and uniformly stored in the corresponding recessed portions as shown in 19B.

[0170] Furthermore, in the plurality of third capture probes P 1B1 , P 1B2 , P 2B1 , P 2B2 , P 3B1 , P 3B2 Fine-tuned multiple third-party components X 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 In the state of their respective orientations, the third capturing unit 13G places a plurality of third minute elements X 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 are uniformly transported to the upper part of the fine alignment tray 14. And, Figure 8B Similarly, the fine alignment tray 14 and the third capture unit 13G are made parallel to each other and face each other to perform the third micro component X 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 The third capturing unit 13G captures the plurality of third minute components X in each of the plurality of recesses of the fine alignment tray 14 corresponding to the third arrangement pattern. 1B1 , X 1B2 , X 2B1 , X 2B2 , X 3B1 , X 3B2 They are uniformly put in and uniformly stored in the corresponding recessed portions as shown in 19C.

[0171] The recess Q of the fine alignment tray 14 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 One of the multiple inscribed edges formed by the respective sidewall surfaces of the plurality of concave portions is selected as an integration edge of the plurality of concave portions. As a portion close to the integration edge, the first micro-element X is defined. iRj The first integrated edge selected from the circumscribed edges formed by the side surfaces of the three-dimensional shape defines the second micro-element X iGj The second integrated edge selected from the circumscribed edges formed by the side surfaces of the three-dimensional shape, and the third micro-element X defined iBj The third integrated edges selected from the circumscribed edges formed by the side surfaces of the three-dimensional shape are respectively directed toward the concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., and move in unison. The first to third integrated edges are respectively integrated in the concave portion Q 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ..., so that the plurality of first micro-elements X iRj , a plurality of second micro elements X iGj And the third micro element X iBj It can be aligned uniformly and with high precision.

[0172] Next, the conveying unit is moved to the recess Q of the fine alignment tray 14. 11 , Q12 , Q 13 , Q 21 ,……,Q 31 , a plurality of first minute components X of iRj , a plurality of second micro elements X iGj And the third micro element X iBj The conveying unit can be connected with a large number of first micro-components X iRj , a plurality of second micro elements X iGj And the third micro element X iBj The positional relationship of the first micro-element X can maintain the pitch accuracy and can be placed in a large number of iRj , a plurality of second micro elements X iGj And the third micro element X iBj There is no particular limitation on the uniform transport to the mounting substrate. For example, an electrostatic wafer (electrostatic chuck) that can pick up a large number of 10,000 to 20,000 micro components using electrostatic force can be used as a transport unit to transport to the mounting substrate. In addition, it can also be used as a transport unit composed of a plate-like substrate (main body) having a hydrophilic region (holding portion) and a hydrophobic region, such as a plastic substrate, and transporting a pickup (chuck) to the mounting substrate. The hydrophilic region of the pickup can be made of, for example, hydrophilic silicon dioxide (SiO 2 ) film. In addition to SiO 2 In addition to the film, silicon nitride film (Si 3 N 4 ), double-layer film of aluminum and aluminum oxide (Al / Al 2 O 3 ), double-layer film of tantalum and tantalum oxide (Ta / Ta 2 O 5 ) etc. The hydrophobic region of the pickup may be composed of single crystal silicon (Si), silicone resin, fluorinated resin, polyimide resin, resist, wax, benzocyclobutene (BCB) etc.

[0173] In each hydrophilic region of the transport unit having the hydrophilic region and the hydrophobic region, a plurality of first minute elements X are attached. iRj , a plurality of second micro elements X iGj And the third micro element X iBj (hereinafter referred to as "micro-component X iRj , X iGj , X iBj "). The liquid is adsorbed. And the position of the liquid is aligned with the micro-element X. iRj , X iGj , X iBj The position of the liquid is related to the position of multiple tiny elements X iRj , X iGj , XiBj After the alignment of the positions of the micro components X is completed, the transport unit is lowered relative to the fine alignment tray 14 so that the liquid is in close contact with the plurality of micro components X. iRj , X iGj , X iBj , so that the conveying unit picks up multiple tiny components X iRj , X iGj , X iBj .

[0174] When the conveyor unit picks up multiple small components X iRj , X iGj , X iBj When the conveying unit is relatively raised relative to the fine alignment tray 14, the concave portion Q of the fine alignment tray 14 is emptied. 11 , Q 12 , Q 13 , Q 21 ,……,Q 31 , ... Then, the transport unit is moved to the mounting substrate. The mounting substrate can also be a target backplane or a reconfigured wafer in the manufacturing process of a microchip display. On the mounting substrate, a matrix of pixels with the same pitch formed by a combination of anode bumps and cathode bumps is formed, and the first to third arrangement patterns are allocated to this matrix. iRj , X iGj , X iBj The arrangement of the trays 14 is precisely determined by the same pitch, so that the micro components X iRj The anode electrode can be aligned with a high accuracy of less than 1 μm, so that the bump can be connected to the anode bump. iRj The cathode electrode can be aligned with high precision so that the bump can be connected to the cathode bump. iGj The anode electrode can be aligned with high precision so that the bump can be connected to the anode bump. When the alignment is completed, the transport unit is heated, and if the liquid evaporates, the microcomponent X iRj , X iGj , X iBj Then, the micro-components X are separated from the conveying unit. iRj The anode electrode and the anode bump are connected by bumps, and the cathode electrode and the cathode bump are connected by bumps. iGj The anode electrode and the anode are connected by a bump.

[0175] Thus, according to the mounting method of one embodiment, by using the rough alignment device including the first capturing unit 13R, the second capturing unit 13G, and the third capturing unit 13G, and by using the fine alignment device including the fine alignment tray 14, a large number of 10,000 to 20,000 micro components X can be mounted. iRj , X iGj , X iBj , without the abnormality of chip orientation, the operation of high-precision installation with the same pitch can be easily and accurately performed. Similarly, even in the case of a module in which multiple semiconductor elements are installed in a mold (structure), the operation of high-precision installation with the same pitch can be easily and accurately performed without the abnormality of module orientation. Therefore, according to the installation method involved in one embodiment, a high-precision integration technology can be established, which can perform high-precision position alignment relative to the pattern of the mounting substrate without reducing the yield and throughput, and can install a hybrid integrated circuit with a simple structure in the case of shuffling a large number of tiny elements.

[0176] (Other Embodiments)

[0177] As described above, although an embodiment representing the technical concept of the present invention is described, it should not be understood that the discussion and drawings constituting part of this disclosure limit the present invention. Based on this disclosure, it is obvious to those skilled in the art that various alternative embodiments, examples, and application technologies can be known. For example, in Figure 6B In the present capture stage shown in FIG. 1 , it is explained that if the current flowing through the coil 122 is reduced, the first microelement X of the quasi-capture stage will be iRj The chip orientation is adjusted by using gravity g to perform fine adjustment by pitch rotation. However, if the first magnetic force applied by the first magnetic force applying unit becomes too weak, the first microelement X may be iRj Ideally, if the first capture probe P iRj The first tiny element X is connected by point contact iRj The first magnetic marker R iRj The magnetic force for adsorption can be used to move the first micro-element X with the point contact portion as the fulcrum without friction. iRj The chip orientation is fine-tuned by pitch rotation. However, in practice, the first micro-component X is placed in point contact. iRj The first magnetic marker R iRj Adsorption is not possible.

[0178] So, if Fig.13As shown in FIG. 1 , in a structure in which a circular fulcrum portion 124a and an annular auxiliary area 124b are provided concentrically around the fulcrum portion 124a, the magnetic force distribution is changed between the quasi-capture stage and the actual capture stage, thereby preventing the device from falling during the orientation adjustment process in the actual capture stage and enabling efficient pitch rotation. Figure 5 In the quasi-capturing stage shown in FIG. 1 , the magnetic forces of the supporting point 124a and the auxiliary region 124b are used to increase the attractive force. In this capturing stage, if the magnetic force of the auxiliary region 124b is weakened or eliminated, the first microelement X can be efficiently captured. iRj Fine adjustment of the chip orientation under pitch rotation. To this end, Fig.13 As shown, the first capture probe P iRj , it is sufficient to make a structure including a first coil 122a, a first core 121a provided in a manner penetrating the interior of the first coil 122a, a second coil 122b, and a second core 121b provided in a manner penetrating the interior of the second coil 122b.

[0179] exist Fig.13 Although the first core 121a and the second core 121b are schematically shown as quadrangular prisms of the same thickness, Figure 4A Similarly, the one with a thicker outer diameter of the first core 121a and the second core 121b can increase the magnetic flux density. Accordingly, in reality, the outer diameter of the first core 121a forms a cylindrical shape with a thickness close to the inner diameter of the first coil 122a at the position of the first coil 122a, and the outer diameter of the second core 121b forms a cylindrical shape with a thickness close to the inner diameter of the second coil 122b at the position of the second coil 122b, but the illustration is simplified.

[0180] The first core 121a extending in the lower left direction as a quadrangular prism rod is bent in a right angle direction so as to be connected to the pattern of the circular fulcrum portion 124a provided on the first capture surface 125. In addition, the second core 121b extending in the lower left direction as a quadrangular prism rod is bent in a right angle direction so as to be connected to the pattern of the annular auxiliary area 124b provided concentrically around the fulcrum portion 124a of the first capture surface 125. Fig.13 As shown, the patterns of the supporting point portion 124 a and the auxiliary area 124 b are exposed on the planar first capturing surface 125 , and the bottom surfaces of the concentric circular pattern and the annular pattern are aligned with the outer surface of the first capturing surface 125 .

[0181] The first coil 122a is connected in series with a first variable current source 123a and a first switch S 1 The current flowing through the first coil 122a can be controlled by the first variable current source 123a. Similarly, the second coil 122b is connected in series with a second variable current source 123b and a second switch S2 , the current flowing through the second coil 122b can be controlled by the second variable current source 123b. Figure 6B In the orientation adjustment process of the capture stage shown in the figure, the value of the current flowing through the second coil 122b is reduced to weaken the magnetic force of the auxiliary area 124b. Alternatively, the second switch S 1 , thereby eliminating the magnetic force of the auxiliary area 124b.

[0182] If the value of the current flowing through the first coil 122a is maintained or strengthened while the magnetic force of the auxiliary region 124b is weakened, the first microelement X in the alignment capture stage iRj When the chip orientation is finely adjusted by using the pitch rotation under gravity g, the first micro-element X can be prevented from iRj In addition, when using Figure 8B The first microelement X in this capture stage is shown iRj If the fine alignment tray 14 falls into the recess, the first switch S connected in series with the first coil 122a and the first variable current source 123a is disconnected. 1 That's it.

[0183] In addition, it is of course included in the configurations in which the configurations described in the above embodiments are arbitrarily applied, various embodiments of the present invention not described herein, etc. Therefore, according to the above description, the technical scope of the present invention is determined only by the invention specific matters involved in the scope of the appropriate claims.

[0184] Description of Reference Numerals

[0185] 13B: Third capture unit

[0186] 13G: Second capture unit

[0187] 13R: First capture unit

[0188] 14: Fine arrangement of pallets

[0189] 21: Semiconductor chips

[0190] 22: Insulation film

[0191] 26W: Rotation axis

[0192] 26X: Pitch axis

[0193] 26Y: Roll axis

[0194] 50Y: Roll angle swing drive unit

[0195] 50X: Pitch and swing drive unit

[0196] 51: Roll axis base

[0197] 52: Roll spindle

[0198] 53: Pitch axis base

[0199] 54: Pitch main axis

[0200] 55: Action rod base axis

[0201] 82 1R1 , 82 1R2 :Anode electrode

[0202] 83 1R2 :Cathode electrode

[0203] 121a: First Core

[0204] 121b: Second core

[0205] 122: Coil

[0206] 122a: First coil

[0207] 122b: Second coil

[0208] 123: Variable current source

[0209] 123a: First variable current source

[0210] 123b: Second variable current source

[0211] 124a: Fulcrum

[0212] 124b: Auxiliary area

[0213] 125: First capture surface

[0214] 126: Electromagnet storage unit.

Claims

1. A micro-element, comprising a functional surface, a back surface parallel to the functional surface, and a plurality of circumscribed edges connecting the functional surface and the back surface, wherein the maximum diagonal length of the functional surface is less than 1 mm, characterized in that: A magnetic marker is arranged at a specific position of the functional surface. The functional surface and a specific circumscribed edge among the plurality of circumscribed edges are identified by the magnetic mark.

2. An aligning system for arranging a plurality of micro-components of the same size and shape as claimed in claim 1 at predetermined positions on a mounting substrate, characterized in that: The alignment system comprises a rough alignment input device including a capture unit, wherein the capture unit comprises a plurality of capture probes and a substrate, wherein the plurality of capture probes respectively comprise a capture surface formed by a plane, and a magnetic force applying portion is provided at each location of the capture surface, and the substrate respectively arranges the plurality of capture probes in a predetermined arrangement pattern. The magnetic force applying part applies magnetic lines of force to the magnetic marks respectively to capture the minute elements.

3. The system according to claim 2, characterized in that: The entire array system defines the functional surface as a "first functional surface", the back surface as a "first back surface", the minute element as a "first minute element", the capture surface as a "first capture surface", the magnetic force applying portion as a "first magnetic force applying portion", the capture probe as a "first capture probe", the arrangement pattern as a "first arrangement pattern", the substrate as a "first substrate", the capture unit as a "first capture unit", and the magnetic label as a "first magnetic label". The rough alignment input device further comprises a second capture unit, wherein the second capture unit has: A plurality of second capture probes having the same size and shape as the first capture probes, each having a second capture surface formed by a plane, and a second magnetic force applying portion is arranged at each position of the second capture surface; and A second base, arranging the plurality of second capture probes in a second arrangement pattern associated with the first arrangement pattern on the mounting substrate; The second magnetic force applying part applies second magnetic lines of force to the second magnetic marks arranged on the second functional surface according to the same rule as the first magnetic marks to capture the second minute element.

4. The system according to claim 3, characterized in that: The alignment system further comprises a fine alignment device having a fine alignment tray, wherein the fine alignment tray forms an array of a plurality of recesses capable of allocating the first arrangement pattern and the second arrangement pattern. The multiple recesses respectively have an inscribed angle, which is equal to an angle of a first integrated edge selected from a plurality of circumscribed edges connecting the first functional surface and the first back surface, and is equal to an angle of a second integrated edge selected from a plurality of circumscribed edges connecting the second functional surface and the second back surface, which is the same as the angle of the first integrated edge.

5. An installation method, characterized in that: The following steps are included: A step of shuffling a group of a plurality of microscopic elements of the same size and shape, wherein the plurality of microscopic elements have a functional surface, a back surface parallel to the functional surface, and a plurality of circumscribed edges connecting the functional surface and the back surface, wherein the maximum diagonal length of the functional surface is less than 1 mm; A step of inserting a plurality of capture probes provided with magnetic force applying parts at various locations on a capture surface formed by a plane into a group of the plurality of minute elements, wherein the magnetic force applying parts respectively apply magnetic lines of force to magnetic markers provided at specific locations on the functional surface, thereby capturing a plurality of minute elements of a number equal to the number of the plurality of capture probes; as well as The step of arranging the plurality of minute elements captured by the plurality of capture probes on a mounting substrate and mounting the elements on the mounting substrate.

6. The installation method according to claim 5, characterized in that: The functional surface is defined as a "first functional surface", the back surface is defined as a "first back surface", the minute element is defined as a "first minute element", the capture surface is defined as a "first capture surface", the magnetic force applying portion is defined as a "first magnetic force applying portion", the capture probe is defined as a "first capture probe", and the magnetic label is defined as a "first magnetic label", The installation method further comprises the following steps: A step of shuffling a group of a plurality of second microscopic elements, wherein the plurality of second microscopic elements are of the same size and shape as the plurality of first microscopic elements, and have a second functional surface, a second back surface parallel to the second functional surface, and a plurality of circumscribed edges connecting the second functional surface and the second back surface; as well as The second magnetic force applying part is arranged at each position of the second capturing surface formed by the plane, and a plurality of second capturing probes of the same size and shape as the first capturing probe are respectively inserted into a group of the plurality of second minute elements, and the second magnetic force applying part applies second magnetic lines of force to the second magnetic markers arranged on the second functional surface in the same rule as the first minute elements, respectively, to capture a plurality of second minute elements of the same number as the plurality of second capturing probes; The second minute components captured by the second capture probes are arranged together with the first minute components on the mounting substrate and mounted on the substrate in a unified manner with the first minute components in a second arrangement pattern associated with the first arrangement pattern for arranging the first minute components on the mounting substrate.

7. The installation method according to claim 6, characterized in that: Before performing the unified arrangement, the installation method further comprises the following steps: In a state where the plurality of first capture probes have captured the plurality of first minute components respectively, a step of finely adjusting the orientation of each of the plurality of first minute components by using gravity; as well as A step of finely adjusting the orientation of each of the plurality of second minute components using gravity in a state where the plurality of second capture probes have captured the plurality of second minute components, respectively.

8. The installation method according to claim 7, characterized in that: Before performing the unified arrangement, the installation method further comprises the following steps: The step of collectively conveying the plurality of first minute components to an upper portion of a fine alignment tray having a plurality of recesses arranged therein, in a state in which the plurality of first capture probes have their respective orientations finely adjusted; The step of collectively accommodating the plurality of first minute elements in the plurality of recesses that correspond to the arrangement of the first arrangement pattern; The step of collectively conveying the plurality of second minute components to the upper portion of the fine alignment tray in a state where the plurality of second capture probes have finely adjusted the orientations of the plurality of second minute components; The step of collectively accommodating the plurality of second minute elements in the plurality of recesses corresponding to the second arrangement pattern; as well as The step of arranging the plurality of first micro elements and the plurality of second micro elements with high precision is performed by moving each side of a first integrated edge selected from the circumscribed edges of the first micro element and a second integrated edge selected from the circumscribed edges of the second micro element toward an integrating edge selected from one of the plurality of inscribed edges formed by the respective side wall surfaces of the plurality of recesses.