Resin model component and high-frequency module

Abstract

The invention provides a resin model component which can be easily thinned. A resin model member (1) is provided with a resin layer (2), at least one chip-type electronic component (3), a first inorganic thin film insulating layer (51), and a first thin film conductive layer (52). The resin layer (2) has a first main surface (2a) and a second main surface (2b) facing each other. At least one chip-type electronic component (3) is provided inside the resin layer (2). The first inorganic thin film insulating layer (51) is provided on the first main surface (2a) of the resin layer (2). The first thin film conductive layer (52) is provided on the first inorganic thin film insulating layer (51).

Description

Technical Field

[0001] The present invention relates to a resin mold component and a high-frequency module. Background Art

[0002] The semiconductor device built-in substrate module (resin mold component) described in Patent Document 1 includes a core substrate (resin layer), a semiconductor device (electronic component) arranged inside the core substrate, a plurality of insulating layers stacked on the main surfaces on both sides of the core substrate, and a wiring layer arranged on the insulating layer.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2013-105992

[0004] In the semiconductor device built-in substrate module described in Patent Document 1, the insulating layer is formed of resin and is therefore relatively thick. Therefore, it is difficult to reduce the thickness of the semiconductor device built-in substrate module. Summary of the invention

[0005] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a resin molded component and a high-frequency module that can be easily reduced in thickness.

[0006] A resin mold component of one embodiment of the present invention comprises a resin layer, at least one chip-type electronic component, a first inorganic thin film insulating layer, and a first thin film conductive layer. The resin layer has a first main surface and a second main surface facing each other. The at least one chip-type electronic component is arranged inside the resin layer. The first inorganic thin film insulating layer is arranged on the first main surface of the resin layer. The first thin film conductive layer is arranged on the first inorganic thin film insulating layer.

[0007] A high-frequency module according to one aspect of the present invention includes the above-mentioned resin mold component and a mounting substrate on which the above-mentioned resin mold component is arranged.

[0008] According to the resin mold component and the high-frequency module of the above-described aspect of the present invention, there is an advantage that thickness reduction can be easily achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 This is a cross-sectional view of the resin mold component according to the first embodiment.

[0010] Figure 2 This is a circuit diagram of the resin model component mentioned above.

[0011] Figure 3 This is to explain the above resin model parts and Figure 2 A cross-sectional view of the corresponding relationship of the circuit.

[0012] Figure 4 This is a circuit diagram of a resin mold component according to the second embodiment.

[0013] Figure 5 It is a cross-sectional view of the above-mentioned resin model component.

[0014] Figure 6 This is a structural diagram of a specific example of the resin mold component of the third embodiment.

[0015] Figure 7 It is a cross-sectional view of the above-mentioned resin model component.

[0016] Figure 8 This is a structural diagram of a high-frequency module including the resin mold component according to the fourth embodiment.

[0017] Fig. 9 It is a cross-sectional view of the above-mentioned resin model component.

[0018] Fig.10 This is a cross-sectional view of the resin mold component of the fifth embodiment.

[0019] Fig.11 This is a cross-sectional view of a high-frequency module according to the sixth embodiment. DETAILED DESCRIPTION

[0020] The resin mold component and the high-frequency module of the embodiment are described below with reference to the drawings. In addition, for the components described in the specification and the drawings, the sizes and thicknesses described in the specification and the drawings, that is, their dimensional relationships are exemplified, and these components are not limited to the exemplifications described in the specification and the drawings.

[0021] (Implementation Method 1)

[0022] (1) Summary

[0023] like Figure 1 As shown, the resin mold component 1 of Embodiment 1 includes a resin layer 2, at least one (two in the illustrated example) chip-type electronic component 3, a first inorganic thin film insulating layer 51, and a first thin film conductive layer 52. The resin layer 2 has a first main surface 2a and a second main surface 2b that are opposite to each other. At least one chip-type electronic component 3 is arranged inside the resin layer 2. The first inorganic thin film insulating layer 51 is arranged on the first main surface 2a of the resin layer 2 and is formed of an inorganic material. The first thin film conductive layer 52 is arranged on the first inorganic thin film insulating layer 51. In addition, although the first inorganic thin film insulating layer 51 is Figure 1 In the example, multiple layers (for example, three layers) are stacked, but it may also be a single layer.

[0024] According to this structure, the first inorganic thin film insulating layer 51 is formed of an inorganic material. Therefore, the first inorganic thin film insulating layer 51 can be made thinner than a structure in which a resin or ceramic is provided on the first main surface 2a of the resin layer 2. As a result, the resin mold component 1 can be easily thinned.

[0025] In addition, the resin mold component 1 of the first embodiment further includes a second inorganic thin film insulating layer 61 and a second thin film conductive layer 62. The second inorganic thin film insulating layer 61 is provided on the second main surface 2b of the resin layer 2 and is formed of an inorganic material. The second thin film conductive layer 62 is provided on the second inorganic thin film insulating layer 61. Figure 1 In the example, multiple layers (for example, three layers) are stacked, but it may also be a single layer.

[0026] According to this structure, the second inorganic thin film insulating layer 61 is formed of an inorganic material. Therefore, compared with a structure in which a resin or ceramic is provided on the second main surface 2b of the resin layer 2, the second inorganic thin film insulating layer 61 can be made thinner. As a result, in a structure in which an inorganic thin film insulating layer (a first inorganic thin film insulating layer 51 and a second inorganic thin film insulating layer 61) and a thin film conductive layer (a first thin film conductive layer 52 and a second thin film conductive layer 62) are provided on both main surfaces (a first main surface 2a and a second main surface 2b) of the resin layer 2, it is easier to make the resin mold component 1 thinner. In addition, the second inorganic thin film insulating layer 61 and the second thin film conductive layer 62 may not be provided.

[0027] (2) Detailed structure

[0028] like Figure 1 As shown, the resin mold component 1 of the first embodiment is a component in which wiring layers (first wiring layer 5 and second wiring layer 6) of a thin film structure are formed on both main surfaces (first main surface 2a and second main surface 2b) of a resin layer 2 having at least one chip-type electronic component 3 built therein, and circuits connected to the chip-type electronic component 3 are formed on these wiring layers 5 and 6. The resin mold component 1 includes a resin layer 2, at least one chip-type electronic component 3, a plurality of connection electrodes 4, a first wiring layer 5, a second wiring layer 6, and a plurality of external terminal electrodes 7.

[0029] The chip-type electronic component 3 is, for example, a surface mount component, specifically, an IC (integrated circuit) chip, a transmission filter, a reception filter, a power amplifier, a low noise amplifier, etc. Figure 1 In the example, the diagram shows a case where two chip-type electronic components 3 are provided, but it is sufficient to have at least one chip-type electronic component 3. When distinguishing between the two chip-type electronic components 3, the two chip-type electronic components 3 are described as chip-type electronic components 3A and 3B. The chip-type electronic component 3 is disposed inside the resin layer 2 and is sealed by the resin layer 2.

[0030] The chip-type electronic component 3 includes a component body 31 and a plurality of pad electrodes 32. The component body 31 is the portion of the chip-type electronic component 3 other than the pad electrodes 32, and includes a circuit that realizes various functions of the chip-type electronic component 3 (hereinafter, this circuit may be recorded as a functional circuit). The component body 31 is, for example, roughly in the shape of a rectangular parallelepiped. The component body 31 has two main surfaces (a third main surface 31a and a fourth main surface 31b) that are opposite to each other, and an outer peripheral surface 31c that connects the outer periphery of the third main surface 31a with the outer periphery of the fourth main surface 31b. The plurality of pad electrodes 32 are portions that are electrically connected to an external circuit (the first wiring layer 5 in Embodiment 1). The plurality of pad electrodes 32 are arranged on the third main surface 31a of the component body 31. In addition, the plurality of pad electrodes 32 are electrically connected to the above-mentioned functional circuit.

[0031] In the first embodiment, a plurality of (two in the example shown) chip-type electronic components 3 are provided. The plurality of chip-type electronic components 3 are arranged so as to be arranged on a virtual plane. The pad electrodes 32 of the plurality of chip-type electronic components 3 are oriented toward the same side (in the example shown). Figure 1 In the example, it is the first main surface 2a side of the resin layer 2 described later).

[0032] The resin layer 2 is a component for arranging the chip-type electronic component 3 inside. The resin layer 2 is, for example, a flat plate in a quadrilateral shape when viewed from above. The resin layer 2 is, for example, formed of a heat-resistant material. The material of the resin layer 2 is, for example, epoxy resin, but is not limited to epoxy resin. Inorganic fillers may also be mixed in the resin layer 2. The resin layer 2 has two main surfaces (a first main surface 2a and a second main surface 2b) facing each other.

[0033] A chip-type electronic component 3 is provided inside the resin layer 2. The resin layer 2 exposes the contact surface 32s of the pad electrode 32 on the outer surface of the chip-type electronic component 3 from the first main surface 2a, and covers the portion other than the contact surface 32s of the pad electrode 32 (the third main surface 31a, the fourth main surface 31b, and the peripheral surface 31c, etc.). The contact surface 32s is coplanar with the first main surface 2a.

[0034] The plurality of connection electrodes 4 are conductive components for electrically connecting the first wiring layer 5 and the second wiring layer 6. The connection electrodes 4 are, for example, cylindrical and are provided in the resin layer 2 to penetrate in the thickness direction D1 of the resin layer 2. The end surfaces of the connection electrodes 4 on both sides of the thickness direction D1 are exposed from the first main surface 2a and the second main surface 2b of the resin layer 2. Figure 1 In the example, the connecting electrode 4 is arranged on the side of the chip-type electronic component 3B opposite to the chip-type electronic component 3A. However, the connecting electrode 4 can be arranged at any position in the resin layer 2, for example, the connecting electrode 4 can also be arranged between the chip-type electronic components 3A and 3B.

[0035] The first wiring layer 5 is a wiring layer in which wiring and circuits connected to the chip-type electronic component 3 are formed. The first wiring layer 5 is provided on the first main surface 2a of the resin layer 2. The first wiring layer 5 includes a first inorganic thin film insulating layer 51 and a first thin film conductive layer 52.

[0036] The first inorganic thin film insulating layer 51 is provided with multiple layers (for example, three layers) on the first main surface 2a of the resin layer 2. In addition, the first inorganic thin film insulating layer 51 is not limited to multiple layers, and may be a single layer. The first inorganic thin film insulating layer 51 is formed of an inorganic material. The inorganic material is, for example, an oxide film (for example, silicon oxide (SiO2) and aluminum oxide (Al2O3)), a nitride film (for example, silicon nitride (SiN x )), nitride oxide films (such as aluminum nitride oxide films (AlON) and silicon nitride oxide films (SiON)), and silicon carbide (SiC).

[0037] The first thin film conductive layer 52 is disposed on the first inorganic thin film insulating layer 51. In more detail, the first thin film conductive layer 52 is disposed between a plurality of first inorganic thin film insulating layers 51. In addition, the first thin film conductive layer 52 may also be disposed on the outer surface of the outermost first inorganic thin film insulating layer 51 among the plurality of first inorganic thin film insulating layers 51. The first thin film conductive layer 52 forms wiring and circuits connected to the chip-type electronic components 3 disposed inside the resin layer 2. For example, the above circuit is formed using passive elements (such as capacitors, inductors, and resistors). Although it is assumed that the above circuit is formed using only passive elements, active elements may also be included. The above circuit is not a necessary structure, but is formed as needed. The first thin film conductive layer 52 is formed of metals such as copper (Cu), silver (Ag), and gold (Au), for example.

[0038] The first thin film conductive layer 52 includes a plurality of conductive layers 52a and a plurality of through-hole electrodes 52b. In addition, the conductive layer 52a and the through-hole electrode 52b may be one each. The plurality of conductive layers 52a are arranged between the plurality of first inorganic thin film insulating layers 51. The plurality of through-hole electrodes 52b are arranged to penetrate at least one conductive layer 52a in the thickness direction thereof, and electrically connect two conductive layers 52a among the plurality of conductive layers 52a. In addition, the through-hole electrode 52b electrically connects the conductive layer 52a with other conductors (the pad electrode 32 of the chip-type electronic component 3, the external terminal electrode 7 or the connection electrode 4). The first thin film conductive layer 52 includes, for example, a connection electrode layer 521 that electrically connects the pad electrodes 32a and 32b of the two chip-type electronic components 3A and 3B to each other, a connection electrode layer 522 that electrically connects the chip-type electronic components 3A and 3B to the external terminal electrode 7, and a connection electrode layer 523 that electrically connects the chip-type electronic components 3A and 3B to the connection electrode 4. The connection electrode layers 521 to 523 are formed as needed.

[0039] The second wiring layer 6 forms a circuit connected to the chip-type electronic component 3 via the connection electrode 4 and the first wiring layer 5. The second wiring layer 6 is provided on the second main surface 2b of the resin layer 2. The second wiring layer 6 includes a second inorganic thin film insulating layer 61 and a second thin film conductive layer 62.

[0040] The second inorganic thin film insulating layer 61 is provided with multiple layers (for example, three layers) on the second main surface 2b of the resin layer 2. In addition, the second inorganic thin film insulating layer 61 is not limited to multiple layers, and may be a single layer. The second inorganic thin film insulating layer 61 is formed of an inorganic material. The inorganic material is, for example, an oxide film (for example, silicon oxide (SiO2) and aluminum oxide (Al2O3)), a nitride film (for example, silicon nitride (SiN x )), oxynitride film (e.g., aluminum oxynitride film (AlON) and silicon oxynitride film (SiON)), silicon carbide (SiC). In addition, the second inorganic thin film insulating layer 61 may be formed of the same inorganic material as the first inorganic thin film insulating layer 51, or may be formed of a different inorganic material. In addition, at least one of the first inorganic thin film insulating layer 51 and the second inorganic thin film insulating layer 61 may be an oxide film, a nitride film, or a oxynitride film.

[0041] The second thin film conductive layer 62 is arranged on a plurality of second inorganic thin film insulating layers 61. In more detail, the second thin film conductive layer 62 is arranged between the plurality of second inorganic thin film insulating layers 61. In addition, the second thin film conductive layer 62 may also be formed on the outer surface of the outermost second inorganic thin film insulating layer 61 among the plurality of second inorganic thin film insulating layers 61. The second thin film conductive layer 62 forms a circuit electrically connected to the chip-type electronic component 3 via the first wiring layer 5 and the connecting electrode 4. The above circuit is formed, for example, using passive elements (such as capacitors, inductors, and resistors). Although it is assumed that the above circuit is formed only using passive elements, active elements may also be included. The second thin film conductive layer 62 is formed, for example, of a metal such as copper (Cu), silver (Ag), or gold (Au).

[0042] The second thin film conductive layer 62 has a plurality of conductor layers 62a and a plurality of through-hole electrodes 62b. In addition, the conductor layer 62a and the through-hole electrode 62b may be one each. The plurality of conductor layers 62a are arranged between the plurality of second inorganic thin film insulating layers 61. The plurality of through-hole electrodes 62b are arranged to penetrate at least one conductor layer 62a in the thickness direction thereof, and electrically connect two conductor layers 62a among the plurality of conductor layers 62a. In addition, the through-hole electrode 62b electrically connects the conductor layer 62a to the connecting electrode 4. The second inorganic thin film insulating layer 61 overlaps with at least one chip-type electronic component 3 when viewed from above in the thickness direction D1 of the resin layer 2. Figure 1In the example of , the second thin film conductive layer 62 overlaps with the chip-type electronic component 3B when viewed from above in the thickness direction D1 of the resin layer 2. In addition, "A overlaps with B" means that at least a part of A overlaps with at least a part of B.

[0043] The plurality of external terminal electrodes 7 are portions electrically connected to an external mounting substrate (not shown). The external terminal electrodes 7 are arranged on the outer principal surface (i.e., the principal surface on the opposite side of the resin layer 2) 5a of the first wiring layer 5. The plurality of external terminal electrodes 7 include external terminal electrodes 7 electrically connected to the first thin film conductive layer 52. The plurality of external terminal electrodes 7 include external terminal electrodes 7 electrically connected to the second thin film conductive layer 62 via the first thin film conductive layer 52 and the connecting electrode 4. In addition, the plurality of external terminal electrodes 7 include external terminal electrodes 7 arranged to overlap with the chip-type electronic component 3 when viewed from above in the thickness direction D1 of the resin layer 2.

[0044] (3) Manufacturing method

[0045] Reference Figure 1 , an example of a method for manufacturing the resin model component 1 is described.

[0046] First, the chip-type electronic component 3 and the connecting electrode 4 are resin-molded with the material for the resin layer 2, and the chip-type electronic component 3 and the connecting electrode 4 are arranged in a predetermined configuration inside the resin layer 2. At this time, on the first main surface 2a of the resin layer 2, the contact surface 32s of each pad electrode 32 of the chip-type electronic component 3 and one end surface of the connecting electrode 4 are exposed. In addition, on the second main surface 2b of the resin layer 2, the other end surface of the connecting electrode 4 is exposed. In addition, the contact surface 32s of the pad electrode 32, one end surface and the other end surface of the connecting electrode 4 are not limited to being exposed during resin molding. For example, the contact surface 32s of the pad electrode 32, one end surface and the other end surface of the connecting electrode 4 may also be covered by the resin layer 2 during resin molding, and exposed by scraping off the resin layer 2 after the resin layer 2 is formed. In addition, the connecting electrode 4 is not limited to being arranged inside the resin layer 2 together with the chip-type electronic component 3 during resin molding. For example, the connection electrode 4 may be provided inside the resin layer 2 by providing a through hole in the resin layer 2 after the chip-type electronic component 3 is resin-molded, and filling the through hole with a material for the connection electrode 4 .

[0047] Next, the first wiring layer 5 (ie, the first inorganic thin film insulating layer 51 and the first thin film conductive layer 52 ) is formed on the first main surface 2 a of the resin layer 2 by, for example, vacuum film forming method (eg, vacuum evaporation method or sputtering method).

[0048] In more detail, an insulating film is formed on the first main surface 2a of the resin layer 2 using a material (inorganic material) for the first inorganic thin film insulating layer 51 by a vacuum film forming method. Then, masking is performed on the formed insulating film except for unnecessary parts (for example, parts where through holes for through-hole electrodes 52b are provided), and the unnecessary parts are etched away. In this way, a first inorganic thin film insulating layer 51 of the first layer having the above-mentioned through holes is formed from the insulating film. Then, in the through holes of the first inorganic thin film insulating layer 51 of the first layer, through-hole electrodes 52b are formed by a vacuum film forming method using a material for the first thin film conductive layer 52. Next, on the outer main surface of the first inorganic thin film insulating layer 51 of the first layer, the conductor layer 52a is patterned by a vacuum film forming method using a material for the first thin film conductive layer 52. In this way, the first inorganic thin film insulating layer 51 and the first thin film conductive layer 52 (conductor layer 52a and through-hole electrode 52b) are alternately formed. The conductor layer 52a is not formed on the last (outermost) first inorganic thin film insulating layer 51, and only the through-hole electrode 52b connected to the external terminal electrode 7 is formed. In this way, the first inorganic thin film insulating layer 51 is formed on the first main surface 2a of the resin layer 2, and the first thin film conductive layer 52 is formed on the first inorganic thin film insulating layer 51. Then, a plurality of external terminal electrodes 7 are formed on the outer main surface 5a of the first wiring layer 5 by vacuum film forming.

[0049] Then, the second wiring layer 6 (i.e., the second inorganic thin film insulating layer 61 and the second thin film conductive layer 62) is formed on the second main surface 2b of the resin layer 2 by a vacuum film forming method by the same manufacturing method as the manufacturing method of the first wiring layer 5. At this time, the conductor layer 62a and the through-hole electrode 62b are not formed on the second inorganic thin film insulating layer 61 of the outermost layer among the plurality of second inorganic thin film insulating layers 61. In addition, although in Embodiment 1, the case where the conductor layer 62a and the through-hole electrode 62b are not formed on the second inorganic thin film insulating layer 61 of the outermost layer is illustrated, the conductor layer 62a and the through-hole electrode 62b may also be formed on the second inorganic thin film insulating layer 61 of the outermost layer. In this way, the resin mold component 1 is manufactured.

[0050] In this manufacturing method, since the first inorganic thin film insulating layer 51 is formed of an inorganic material, it is easy to form the first inorganic thin film insulating layer 51 into a thin film using a vacuum film forming method. Moreover, by forming the first inorganic thin film insulating layer 51 by a vacuum film forming method, it is also easy to form the first thin film conductive layer 52 by a vacuum film forming method. As a result, it is easy to form the entire first wiring layer 5 (i.e., the first inorganic thin film insulating layer 51 and the first thin film conductive layer 52) into a thin film. Similarly, the entire second wiring layer 6 is also easy to form into a thin film.

[0051] The vacuum film forming method used in the manufacturing method can use the same method as the method used in the thin film forming step of the semiconductor manufacturing process. Therefore, by using the same method as the method used in the thin film forming step of the semiconductor manufacturing process as the vacuum film forming method, the first wiring layer 5 and the second wiring layer 6 can be formed with high integration through fine wiring.

[0052] (4) Specific example of resin mold component 1

[0053] (4-1) Circuit structure of resin model parts

[0054] The resin mold component 1 of the exemplary embodiment 1 includes Figure 2 The power amplifier 12 and the output matching circuit 13 of the circuit structure shown in FIG. Figure 2 As shown, an input terminal 10 , an output terminal 11 , a power amplifier 12 , and an output matching circuit 13 are provided.

[0055] The input terminal 10 is a terminal for inputting a signal (eg, a transmission signal) amplified by the power amplifier 12. The output terminal 11 is a terminal for outputting an output signal of the output matching circuit 13.

[0056] The power amplifier 12 amplifies the signal input to the input terminal 10 and outputs the amplified signal to the output matching circuit 13. The power amplifier 12 includes a driver stage 121, an inter-stage matching circuit 122 (matching circuit), and a final stage 123.

[0057] The driver stage 121 is a circuit module that amplifies a signal input to the input terminal 10. The driver stage 121 includes a matching circuit 121a and a first amplifier 121b. The matching circuit 121a is connected between the input terminal 10 and the first amplifier 121b, and performs impedance matching between a circuit (not shown) connected to the input terminal 10 and the first amplifier 121b. The first amplifier 121b has an input section and an output section. The input section of the first amplifier 121b is connected to the input terminal 10 via the matching circuit 121a, and the output section of the first amplifier 121b is connected to the inter-stage matching circuit 122 (more specifically, the branch point N1 described later). The driver stage 121 performs impedance matching on the signal input to the input terminal 10 through the matching circuit 121a, amplifies the impedance-matched signal through the first amplifier 121b, and outputs it to the branch point N1 of the inter-stage matching circuit 122.

[0058] The inter-stage matching circuit 122 is connected between the driving stage 121 and the final stage 123 to perform impedance matching between the driving stage 121 and the final stage 123. The inter-stage matching circuit 122 includes capacitors C1, C2 and a transformer T1. The transformer T1 includes a primary coil L1 and a secondary coil L2. One end (first end) of the primary coil L1 is grounded, and the other end (second end) of the primary coil L1 is grounded via the capacitor C1. The output of the first amplifier 121b is connected to a branch point N1 between the capacitor C1 and the primary coil L1. Both ends of the secondary coil L2 are connected to the inputs of two second amplifiers 123a and 123b described later of the final stage 123. In addition, a capacitor C2 is connected between both ends of the secondary coil L2. The inter-stage matching circuit 122 performs impedance matching on an output signal from the output section of the first amplifier 121 b using the primary coil L1 , the secondary coil L2 , and the capacitors C1 and C2 , and outputs the signal to input sections of two second amplifiers 123 a and 123 b described later in the final stage 123 .

[0059] The final stage 123 is a circuit module that amplifies the output signal of the inter-stage matching circuit 122. That is, in the power amplifier 12, the transmission signal is amplified by two stages, the driver stage 121 and the final stage 123. The final stage 123 includes two second amplifiers 123a and 123b and a capacitor C3. The second amplifiers 123a and 123b have an input section and an output section. The input section of the second amplifier 123a is connected to one end (first end) of the secondary coil L2 of the inter-stage matching circuit 122, and the input section of the second amplifier 123b is connected to the other end (first end) of the secondary coil L2. The output section of the second amplifier 123a is connected to one end (first end) of the primary coil L3 described later of the output matching circuit 13, and the output section of the second amplifier 123b is connected to the other end (second end) of the primary coil L3 described later of the output matching circuit 13. That is, the output matching circuit 13 is connected to the output sections of the second amplifiers 123a and 123b. The capacitor C3 is connected between the outputs of the two second amplifiers 123a and 123b. The final stage 123 independently amplifies the output signals from the secondary coil L2 of the inter-stage matching circuit 122 by the two second amplifiers 123a and 123b, and outputs the signals to the primary coil L3 of the output matching circuit 13 described later.

[0060] The first amplifier 121b of the driver stage 121 is an amplifier on the signal input side (i.e., the input terminal 10 side) of the plurality of amplifiers 121b, 123a, 123b constituting the power amplifier 12. The second amplifiers 123a, 123b of the final stage 123 are amplifiers on the signal output side (i.e., the output terminal 11 side) of the plurality of amplifiers 121b, 123a, 123b constituting the power amplifier 12.

[0061] The output matching circuit 13 is connected between the power amplifier 12 and the output terminal 11, and performs impedance matching between the power amplifier 12 and the circuit (not shown) connected to the output terminal 11. The output matching circuit 13 includes a transformer T2 and a capacitor C4. The transformer T2 includes a primary coil L3 and a secondary coil L4. Both ends of the primary coil L3 are connected to the output parts of the two second amplifiers 123a of the final stage 123. One end (first end) of the secondary coil L4 is grounded, and the other end (second end) of the secondary coil L4 is grounded via the capacitor C3. The output terminal 11 is connected to the branch point N2 between the capacitor C3 and the secondary coil L4. The output matching circuit 13 combines the output signals of the output parts of the two second amplifiers 123a from the inter-stage matching circuit 122 into one signal through the transformer T2, and performs impedance matching through the primary coil L3, the secondary coil L4 and the capacitor C4, and outputs it from the output terminal 11.

[0062] Here, yes Figure 2 The structure of the circuit is supplemented. The input section 121p of the driver stage 121 is arranged between the input terminal 10 and the input section of the matching circuit 121a. The two output sections 122q of the inter-stage matching circuit 122 are arranged, for example, near the final stage 123 side of the connection point connecting the secondary coil L2 and one end of the capacitor C2, and near the final stage 123 side of the connection point connecting the other ends. The two input sections 123p of the final stage 123 are arranged, for example, near the input sections of the two second amplifiers 123a and 123b. The two output sections 123q of the final stage 123 are arranged, for example, near the output matching circuit 13 side of the connection point between the output section of the second amplifier 123a and one end (first end) of the capacitor C3, and near the output matching circuit 13 side of the connection point between the output section of the second amplifier 123b and the other end (second end) of the capacitor C3. The input section 13p of the output matching circuit 13 is arranged near both ends of the primary coil L3. The output section 13 q of the output matching circuit 13 is arranged between the branch point N2 and the output terminal 11 .

[0063] In this specific example, for example, the driver stage 121 and the inter-stage matching circuit 122 are included in one IC chip (first IC chip 14A), and the final stage 123 is included in another IC chip (second IC chip 14B).

[0064] (4-2) Correspondence between resin model component 1 and circuit

[0065] Reference Figure 3 , the resin model part 1 and Figure 2 The corresponding relationship of the circuit is explained.

[0066] The chip-type electronic component 3A of the resin mold component 1 is a first IC chip 14A including a driver stage 121 and an inter-stage matching circuit 122. That is, the inter-stage matching circuit 122 is included in the first IC chip 14A together with the driver stage 121. The pad electrode 32c of the chip-type electronic component 3A is the input portion 121p of the driver stage 121. The pad electrode 32c is connected to the external terminal electrode 7a, which is the input terminal 10, via the connecting electrode layer 522a of the first thin-film conductive layer 52. The pad electrode 32d of the chip-type electronic component 3A is one of the two output portions 122q of the inter-stage matching circuit 122. The pad electrode 32d is connected to the pad electrode 32e (i.e., one of the two input portions 123p of the final stage 123) of the chip-type electronic component 3B via the connecting electrode layer 521 of the first thin-film conductive layer 52. In addition, in Figure 3 In the example of FIG. 1 , the pad electrode 32 which is the other of the two output portions 122q is omitted from the illustration.

[0067] In addition, the chip-type electronic component 3B of the resin mold component 1 is a second IC chip 14B including the final stage 123. The pad electrode 32e of the chip-type electronic component 3B is the input portion 123p of the final stage 123. The pad electrode 32e is electrically connected to the pad electrode 32d (i.e., the output portion 122q of the inter-stage matching circuit 122) of the chip-type electronic component 3A via the connection electrode layer 521 of the first thin-film conductive layer 52. The pad electrode 32f of the chip-type electronic component 3B is the output portion 123q of the final stage 123. The pad electrode 32f is electrically connected to the second thin-film conductive layer 62 via the connection electrode layer 523 of the first thin-film conductive layer 52 and the connection electrode 4.

[0068] In addition, at least one of the first thin film conductive layer 52 and the second thin film conductive layer 62 of the resin mold component 1 (in Figure 3 In the example of the second thin film conductive layer 62) Figure 2 The through-hole electrode 62b of the second thin-film conductive layer 62 is one of the two input parts 13p of the output matching circuit 13. The through-hole electrode 62b is electrically connected to the pad electrode 32f of the chip-type electronic component 3B (i.e., the output part 123q of the final stage 123) via the connecting electrode 4 and the connecting electrode layer 523a of the first thin-film conductive layer 52. The external terminal electrode 7b is the output terminal 11, and is electrically connected to a predetermined position of the second thin-film conductive layer 62 (i.e., the output part 13q of the output matching circuit 13) via the connecting electrode layer (not shown) of the first thin-film conductive layer 52 and the connecting electrode (not shown) in the resin layer 2.

[0069] The output matching circuit 13 (i.e., the second thin film conductive layer 62) overlaps the chip-type electronic component 3B (i.e., the second IC chip 14B) when viewed from above in the thickness direction D1 of the resin layer 2. Here, "A overlaps B" means that at least a portion of A overlaps at least a portion of B. In addition, the input terminal 10 and the output terminal 11 are composed of two predetermined ones of the plurality of external terminal electrodes 7.

[0070] In this specific example, as described above, the inter-stage matching circuit 122 is included in the first IC chip 14A together with the driver stage 121. Therefore, it is possible to suppress the presence of a junction portion causing impedance shift between the driver stage 121 and the inter-stage matching circuit 122. Thus, impedance matching is easily achieved in the inter-stage matching circuit 122.

[0071] In this specific example, as described above, the output matching circuit 13 is included in at least one of the first thin film conductive layer 52 and the second thin film conductive layer 62 (for example, the second thin film conductive layer 62). Therefore, the resin mold component 1 can be easily thinned in the structure including the output matching circuit 13. In addition, since the output matching circuit 13 is not included in the second IC chip 14B, the second IC chip 14B can be miniaturized. In addition, the output matching circuit 13 overlaps with the second IC chip 14B as described above. Therefore, the electromagnetic interference between the output matching circuit 13 and other components in the resin mold component 1 (for example, the driver stage 121 and the inter-stage matching circuit 122) can be reduced.

[0072] In addition, in this specific example, in the first IC chip 14A including the driver stage 121, the substrate is formed by, for example, silicon (Si). In addition, in the second IC chip 14B including the final stage 123, the substrate is formed by, for example, gallium arsenide (GaAs). A substrate made of gallium arsenide has high performance but is expensive. On the other hand, a substrate made of silicon is cheap but has lower performance than a substrate made of gallium arsenide. In the resin mold component 1 of this specific example, in the first IC chip 14A including the driver stage 121, the substrate is formed by silicon, and in the second IC chip 14B including the final stage 123, the substrate is formed by gallium arsenide. Therefore, the resin mold component 1 can be constructed to achieve both price and performance.

[0073] (Variation Example)

[0074] In Embodiment 1, a case where both the first wiring layer 5 (i.e., the first inorganic thin film insulating layer 51 and the first thin film conductive layer 52) and the second wiring layer 6 (i.e., the second inorganic thin film insulating layer 61 and the second thin film conductive layer 62) are provided is exemplified. However, a case where only the first wiring layer 5 is provided out of the first wiring layer 5 and the second wiring layer 6 may be provided. In this case, the circuit included in the second thin film conductive layer 62 of the second wiring layer 6 is included in the first thin film conductive layer 52 of the first wiring layer 5 instead of the second thin film conductive layer 62.

[0075] (Other Embodiments)

[0076] In the following description, the difference from the first embodiment is mainly described, and the same components as those in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the description thereof may be omitted.

[0077] (Implementation Method 2)

[0078] In the specific example of the first embodiment (see Figure 2 as well as Figure 3 ), the driver stage 121 and the inter-stage matching circuit 122 are included in the first IC chip 14A. In contrast, in the second embodiment, Figure 4 as well as Figure 5 As shown, the driver stage 121 is included in the first IC chip 14C. Furthermore, the inter-stage matching circuit 122 is included in at least one of the first thin film conductive layer 52 and the second thin film conductive layer 62 (in Figure 4 as well as Figure 5 In the example, it is the first thin film conductive layer 52).

[0079] The resin mold component 1 of the second embodiment has Figure 4 The circuit shown comprises a power amplifier 12 and an output matching circuit 13. Figure 4 The circuit and Figure 2 The circuit is the same.

[0080] Here, yes Figure 4 The output section 121q of the driver stage 121 is arranged near the output section of the first amplifier 121b. The input section 122p of the inter-stage matching circuit 122 is arranged near the branch point N1. Figure 2 The same situation, Figure 4 Reference numeral 121 p shown is the input portion of the driver stage 121 . Figure 4 Reference numeral 122 q shown is an output portion of the inter-stage matching circuit 122 . Figure 4 Reference numeral 123 p is shown as an input portion of the driver stage 121 . Figure 4Reference numeral 123 q shown is the output portion of the final stage 123 . Figure 4 Reference numeral 13 p is an input section of the output matching circuit 13 . Figure 4 Reference numeral 13 q is an output portion of the output matching circuit 13 .

[0081] Reference Figure 5 , the resin mold component 1 of the second embodiment and Figure 4 The corresponding relationship of the circuit is described. In embodiment 2, the chip-type electronic component 3A is a first IC chip 14C including a driver stage 121. The pad electrode 32c of the chip-type electronic component 3A is an input portion 121p of the driver stage 121. The pad electrode 32c is connected to the external terminal electrode 7a as the input terminal 10 via the connecting electrode layer 522a of the first thin-film conductive layer 52. The pad electrode 32d of the chip-type electronic component 3A is an output portion 121q of the driver stage 121. The pad electrode 32d is connected to the pad electrode 32e (i.e., one of the two input portions 123p of the final stage 123) of the chip-type electronic component 3B via the connecting electrode layer 521 of the first thin-film conductive layer 52.

[0082] The chip-type electronic component 3B of the second embodiment is a second IC chip 14B including the final stage 123. Since the second IC chip 14B is the same as the second IC chip 14B of the specific example of the first embodiment, detailed description thereof will be omitted.

[0083] The inter-stage matching circuit 122 of the second embodiment is included in the first thin film conductive layer 52, for example. More specifically, the inter-stage matching circuit 122 is formed by the connecting electrode layer 521 in the first thin film conductive layer 52, which connects the pad electrode 32d of the chip-type electronic component 3A to the pad electrode 32e of the chip-type electronic component 3B. The through-hole electrode 52c of the connecting electrode layer 521 is the input portion 122p of the inter-stage matching circuit 122, and is connected to the pad electrode 32d of the chip-type electronic component 3A (i.e., the output portion 121q of the driving stage 121). The through-hole electrode 52d of the connecting electrode layer 521 is the output portion 122q of the inter-stage matching circuit 122, and is connected to the pad electrode 32e of the chip-type electronic component 3B (i.e., the input portion 123p of the final stage 123).

[0084] The output matching circuit 13 of the second embodiment is the same as the specific example of the first embodiment, and is included in the second thin film conductive layer 62. Therefore, the detailed description of the output matching circuit 13 is omitted.

[0085] As described above, in the third embodiment, since the inter-stage matching circuit 122 is included in the first thin film conductive layer 52, the first IC chip 14C does not include the inter-stage matching circuit 122. As a result, since the inter-stage matching circuit 122 is not included, the first IC chip 14C can be miniaturized.

[0086] (Implementation 3)

[0087] In the third embodiment, the resin mold component 1 is shown as having Figure 6 The duplexer 16 and the matching circuit 17 are shown.

[0088] like Figure 6 As shown, the resin mold component 1 of the third embodiment includes an input terminal 15A, an output terminal 15B, an input / output terminal 15C, a duplexer 16 , and a matching circuit 17 connected to the duplexer 16 .

[0089] The input terminal 15A inputs a transmission signal. The output terminal 15B outputs an output signal (reception signal) of a reception filter 19 described later of the duplexer 16. The input / output terminal 15C outputs an output signal (transmission signal) of a transmission filter 18 described later of the duplexer 16, and inputs a reception signal processed by the reception filter 19 described later of the duplexer 16.

[0090] The duplexer 16 includes a transmission filter 18 (a transmission component) and a reception filter 19 (a reception component). The transmission filter 18 includes an input section 18a and an output section 18b. The input section 18a of the transmission filter 18 is connected to the input terminal 15A. The output section 18b of the transmission filter 18 is connected to the input-output terminal 15C. The transmission filter 18 passes a transmission signal of a first frequency band among transmission signals input from the input terminal 15A to the input section 18a, and outputs the transmission signal from the output section 18b to the input-output terminal 15C. The reception filter 19 includes an input section 19a and an output section 19b. The input section 19a of the reception filter 19 is connected to the input-output terminal 15C. The output section 19b of the reception filter 19 is connected to the output terminal 15B. The reception filter 19 passes a reception signal of a second frequency band among reception signals input from the input-output terminal 15C to the input section 19a, and outputs the reception signal from the output section 19b to the output terminal 15B.

[0091] The matching circuit 17 is connected between the input / output terminal 15C and the ground, and performs impedance matching between a circuit (not shown) connected to the input / output terminal 15C and the duplexer 16 .

[0092] Reference Figure 7 , the resin mold component 1 of the third embodiment and Figure 6The corresponding relationship of the circuit is described. In Embodiment 3, the chip-type electronic component 3A of the resin mold component 1 is a transmission filter 18. The pad electrode 32c of the chip-type electronic component 3A is the input portion 18a of the transmission filter 18. The pad electrode 32c is electrically connected to the external terminal electrode 7a as the input terminal 15A via the connection electrode layer 522a of the first thin-film conductive layer 52. The pad electrode 32d of the chip-type electronic component 3A is the output portion 18b of the transmission filter 18. The pad electrode 32d is electrically connected to the pad electrode 32e of the chip-type electronic component 3B and the external terminal electrode 7c as the input-output terminal 15C via the connection electrode layer 521 of the first thin-film conductive layer 52.

[0093] The chip-type electronic component 3B of the resin mold component 1 is the receiving filter 19. The pad electrode 32e of the chip-type electronic component 3B is the input portion 19a of the receiving filter 19. The pad electrode 32e is electrically connected to the pad electrode 32d of the chip-type electronic component 3A (i.e., the output portion 18b of the transmitting filter 18) via the connecting electrode layer 521 of the first thin-film conductive layer 52. The pad electrode 32f of the chip-type electronic component 3B is the output portion 19b of the receiving filter 19. The pad electrode 32f is electrically connected to the external terminal electrode 7b, which is the output terminal 15B, via the connecting electrode layer 522b of the first thin-film conductive layer 52.

[0094] The matching circuit 17 is included in at least one of the first thin film conductive layer 52 and the second thin film conductive layer 62 (in Figure 7 The through-hole electrode 62u of the second thin-film conductive layer 62 corresponds to one end (first end) 17a of the matching circuit 17. The through-hole electrode 62u is electrically connected to the external terminal electrode 7c via the connecting electrode 4 and the connecting electrode layer 521 of the first thin-film conductive layer 52. The second thin-film conductive layer 62 is electrically connected to the external terminal electrode 7d, which is a ground terminal, at a portion corresponding to the other end (second end) 17b of the matching circuit 17 via the connecting electrode omitted in the resin layer 2 and the connecting electrode omitted in the first thin-film conductive layer 52.

[0095] As described above, according to the third embodiment, the duplexer 16 and the matching circuit 17 can be integrated into one component (resin mold component 1 ), and the resin mold component 1 can be easily reduced in thickness.

[0096] In the third embodiment, the transmission filter 18 is an example of a transmission component through which a transmission signal passes (more specifically, a transmission component that processes a transmission signal). The reception filter 19 is an example of a reception component through which a reception signal passes (more specifically, a reception component that processes a reception signal). That is, the resin mold component 1 of the third embodiment is an example of a case where the plurality of chip-type electronic components 3 include a transmission component and a reception component when the plurality of chip-type electronic components 3 are provided.

[0097] (Implementation 4)

[0098] In the fourth embodiment, the resin mold component 1 is shown as having Figure 8 That is, in Embodiment 4, the resin mold component 1 includes a power amplifier 211 (transmission component), an output matching circuit 212 (first circuit) connected to the power amplifier 211, a low noise amplifier 213 (reception component), and a matching circuit 214 (second circuit) connected to the low noise amplifier 213.

[0099] right Figure 8 The structure of the high-frequency module 200 shown will be briefly described.

[0100] The high frequency module 200 processes the reception signal received by the antenna 220 (filtering and amplifying) and outputs it to the signal processing circuit 230. The high frequency module 200 also processes the transmission signal input from the signal processing circuit 230 (filtering and amplifying) and transmits it from the antenna 220.

[0101] The high frequency module 200 includes an antenna terminal 201 , a signal input terminal 202 , a signal output terminal 203 , a first switch 204 , a second switch 205 , a third switch 206 , duplexers 207 , 208 , matching circuits 209 , 210 , a power amplifier 211 , an output matching circuit 212 , a low noise amplifier 213 , and a matching circuit 214 .

[0102] The antenna terminal 201 is connected to the antenna 220. The signal input terminal 202 and the signal output terminal 203 are connected to the signal output unit and the signal input unit of the signal processing circuit 230, respectively.

[0103] The signal processing circuit 230 inputs a transmission signal to the signal input terminal 202 of the high frequency module 200, and performs signal processing on a reception signal output from the signal output terminal 203 of the high frequency module 200. The signal processing circuit 230 includes an RF signal processing circuit 231 and a baseband signal processing circuit 232. The RF signal processing circuit 231 performs signal processing such as down-conversion on the reception signal output from the signal output terminal 203 of the high frequency module 200, and outputs the signal to the baseband signal processing circuit 22. In addition, the RF signal processing circuit 231 performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 232, and outputs the signal to the signal input terminal 202 of the high frequency module 200. The baseband signal processing circuit 232 outputs the reception signal output from the RF signal processing circuit 21 to the outside. In addition, the baseband signal processing circuit 232 generates a transmission signal based on a baseband signal (such as a sound signal and an image signal) input from the outside, and outputs the generated transmission signal to the RF signal processing circuit 231.

[0104] The first switch 204 has a common terminal 204a and two selection terminals 204b and 204c. The common terminal 204a is selectively connected to the two selection terminals 204b and 204c. The common terminal 204a is connected to the antenna terminal 201. The selection terminal 204b is commonly connected to the output of the transmission filter 207T described later and the input of the reception filter 207R described later of the duplexer 207 via the matching circuit 209. The selection terminal 204c is commonly connected to the output of the transmission filter 208T described later and the input of the reception filter 208R described later of the duplexer 208 via the matching circuit 210.

[0105] The second switch 205 has a common terminal 205a and two selection terminals 205b and 205c. The common terminal 205a is selectively connected to the two selection terminals 205b and 205c. The common terminal 205a is connected to the signal input terminal 202 via the output matching circuit 212 and the power amplifier 211. The selection terminal 205b is connected to the input portion of the transmission filter 208T described later of the duplexer 208. The selection terminal 205c is connected to the input portion of the transmission filter 208T described later of the duplexer 208.

[0106] The third switch 206 has a common terminal 206a and two selection terminals 206b and 206c. The common terminal 206a is selectively connected to the two selection terminals 206b and 206c. The common terminal 206a is connected to the signal output terminal 203 via the matching circuit 214 and the low noise amplifier 213. The selection terminal 206b is connected to the output of the reception filter 207R of the duplexer 207, which will be described later. The selection terminal 206c is connected to the output of the reception filter 208R of the duplexer 208, which will be described later.

[0107] The duplexer 207 includes a transmission filter 207T and a reception filter 207R. The transmission filter 207T passes the transmission signal of the first frequency band among the transmission signals output from the selection terminal 205b of the second switch 205, and outputs the passed transmission signal to the selection terminal 204b of the first switch 204 via the matching circuit 209. The reception filter 207R receives the reception signal output from the selection terminal 204b of the first switch 204 via the matching circuit 209, passes the reception signal of the second frequency band among the received reception signals, and outputs the received signal to the selection terminal 206b of the third switch 206.

[0108] The duplexer 208 includes a transmission filter 208T and a reception filter 208R. The transmission filter 208T passes the transmission signal of the third frequency band among the transmission signals output from the selection terminal 205c of the second switch 205, and outputs the passed transmission signal to the selection terminal 204c of the first switch 204 via the matching circuit 210. The reception filter 208R receives the reception signal output from the selection terminal 204c of the first switch 204 via the matching circuit 210, passes the reception signal of the fourth frequency band among the received reception signals, and outputs the received signal to the selection terminal 206c of the third switch 206.

[0109] The power amplifier 211 amplifies the transmission signal from the signal input terminal 202 , and outputs the amplified transmission signal to the common terminal 205 a of the second switch 205 via the output matching circuit 212 .

[0110] The low noise amplifier 213 receives a reception signal from the common terminal 206 a of the third switch 206 via the matching circuit 214 , amplifies the received reception signal, and outputs the amplified reception signal to the signal output terminal 203 .

[0111] The matching circuit 209 is connected between the first switch 204 and the duplexer 207 to perform impedance matching between the first switch 204 and the duplexer 207. The matching circuit 210 is connected between the first switch 204 and the duplexer 208 to perform impedance matching between the first switch 204 and the duplexer 208. The output matching circuit 212 is connected between the second switch 205 and the power amplifier 211 to perform impedance matching between the second switch 205 and the power amplifier 211. The matching circuit 214 is connected between the third switch 206 and the low noise amplifier 213 to perform impedance matching between the third switch 206 and the low noise amplifier 213.

[0112] Reference Fig. 9 , the resin mold component 1 of the fourth embodiment and Figure 8The corresponding relationship of the structure of the range W1 is described. In the resin mold component 1 of the fourth embodiment, the chip-type electronic component 3A is a low-noise amplifier 213. The pad electrode 32c of the chip-type electronic component 3A is the input portion 213a of the low-noise amplifier 213. The pad electrode 32d of the chip-type electronic component 3A is the output portion 213b of the low-noise amplifier 213. The pad electrodes 32c and 32d are connected to the external terminal electrodes 7a and 7b through the connection electrode layers 522a and 522b of the first thin film conductive layer 52, respectively.

[0113] In addition, the chip-type electronic component 3B is a power amplifier 211. The pad electrode 32e of the chip-type electronic component 3B is the input portion 211a of the power amplifier 211. The pad electrode 32e is connected to the external terminal electrode 7c via the connection electrode layer 522c of the first thin-film conductive layer 52. The pad electrode 32f of the chip-type electronic component 3B is the output portion 211b of the power amplifier 211. The pad electrode 32f is connected to the second thin-film conductive layer 62 via the connection electrode layer 523 of the first thin-film conductive layer 52 and the connection electrode 4.

[0114] In addition, the matching circuit 214 is included in at least one of the first thin film conductive layer 52 and the second thin film conductive layer 62 (in Fig. 9 In the example of the first thin film conductive layer 52, the matching circuit 214 is included in the connection electrode layer 522a of the first thin film conductive layer 52. Fig. 9 In the example, the second thin film conductive layer 62) forms an output matching circuit 212.

[0115] The connection electrode layer 522a (i.e., the matching circuit 214) overlaps the chip-type electronic component 3A (i.e., the low-noise amplifier 213) when viewed from above in the thickness direction D1 of the resin layer 2. The through-hole electrode 52d of the connection electrode layer 522a is the input portion 214a of the matching circuit 214, and is connected to the external terminal electrode 7a. The through-hole electrode 52c of the connection electrode layer 522a is the output portion 212b of the matching circuit 214, and is connected to the pad electrode 32c (the input portion 213a of the low-noise amplifier 213) of the chip-type electronic component 3A.

[0116] The second thin film conductive layer 62 (i.e., the output matching circuit 212) overlaps the chip-type electronic component 3B (i.e., the power amplifier 211) when viewed from above in the thickness direction D1 of the resin layer 2. The through-hole electrode 62c of the second thin film conductive layer 62 is the input portion 212a of the output matching circuit 212. The through-hole electrode 62c is connected to the pad electrode 32f (the output portion 211b of the power amplifier 211) via the connection electrode 4 and the connection electrode layer 523. The through-hole electrode (not shown) corresponding to the output portion 212b of the output matching circuit 212 in the second thin film conductive layer 62 is connected to the external terminal electrode 7d via the connection electrode (not shown) in the resin layer 2 and the connection electrode layer (not shown) of the first thin film conductive layer 52.

[0117] In Embodiment 4, low noise amplifier 213 is an example of a receiving component through which a reception signal passes. Matching circuit 214 is an example of a circuit (second circuit) connected to the receiving component. In addition, power amplifier 211 is an example of a transmitting component through which a transmission signal passes. Output matching circuit 212 is an example of a circuit (first circuit) connected to the transmitting component. That is, the resin mold component 1 of Embodiment 4 is an example of a case where a plurality of chip-type electronic components 3 are provided, and the plurality of chip-type electronic components 3 include a transmitting component and a receiving component.

[0118] According to Embodiment 4, the power amplifier 211, the low noise amplifier 213, the output matching circuit 212, and the matching circuit 214 can be integrated into one component (resin mold component 1), and the resin mold component 1 can be easily thinned. In addition, the output matching circuit 212 (i.e., the circuit connected to the transmission component) and the matching circuit 214 (i.e., the circuit connected to the reception component) can be separately arranged on the front and back surfaces of the resin layer 2 of the resin mold component 1. As a result, the electromagnetic isolation between the output matching circuit 212 and the matching circuit 214 can be ensured.

[0119] (Implementation method 5)

[0120] like Fig.10 As shown, the resin mold component 1 of the fifth embodiment is configured similarly to the resin mold component 1 of the first embodiment except that the fourth principal surfaces 31 b of the two chip-type electronic components 3A and 3B and the second principal surface 2 b of the resin layer 2 are formed flush with each other.

[0121] In Embodiment 5, the second wiring layer 6 is formed to cover the second main surface 2b of the resin layer 2 and the fourth main surface 31b of the chip-type electronic component 3. More specifically, the second inorganic thin film insulating layer 61 is provided to cover the second main surface 2b of the resin layer 2 and the fourth main surfaces 31b of the two chip-type electronic components 3A and 3B. Furthermore, the second thin film conductive layer 62 is provided on the second inorganic thin film insulating layer 61.

[0122] As a method of forming the fourth principal surface 31b of the two chip-type electronic components 3A and 3B and the second principal surface 2b of the resin layer 2 into the same plane, based on the manufacturing method of embodiment 1, two chip-type electronic components 3A and 3B and a connecting electrode 4 are provided inside the resin layer 2. Then, using a grinding device, the second principal surface 2b of the resin layer 2 is ground until the fourth principal surface 31b of the two chip-type electronic components 3A and 3B is exposed.

[0123] According to the fifth embodiment, since the fourth main surface 31b of the chip-type electronic components 3A and 3B is not covered by the resin layer 2, the thickness of the resin layer 2 in the thickness direction D1 can be reduced corresponding to the fact that the fourth main surface 31b is not covered by the resin layer 2. As a result, it is easy to further reduce the thickness of the resin mold component 1.

[0124] Furthermore, in Embodiment 5, a case is illustrated in which the fourth principal surfaces 31b of all of the plurality of chip-type electronic components 3 disposed inside the resin layer 2 are made to be in the same plane as the second principal surface 2b of the resin layer 2. However, at least one fourth principal surface 31b of the plurality of chip-type electronic components 3 may be made to be in the same plane as the second principal surface 2b of the resin layer 2. For example, the fourth principal surface 31b of the chip-type electronic component 3 having the highest height from the first principal surface 2a of the resin layer 2 to the fourth principal surface 31b of the chip-type electronic component 3 among the plurality of chip-type electronic components 3 may be made to be in the same plane as the second principal surface 2b of the resin layer 2.

[0125] Furthermore, in Embodiment 5, the fourth principal surface 31b of the chip-type electronic component 3 (i.e., the principal surface on the opposite side to the pad electrode 32) is arranged on the side of the second principal surface 2b of the resin layer 2, so that the fourth principal surface 31b of the chip-type electronic component 3 and the second principal surface 2b of the resin layer 2 are made to be in the same plane. However, in a structure in which the fourth principal surface 31b of the chip-type electronic component 3 is arranged on the side of the first principal surface 2a of the resin layer 2, the fourth principal surface 31b of the chip-type electronic component 3 and the first principal surface 2a of the resin layer 2 are made to be in the same plane. That is, the fourth principal surface 31b of the chip-type electronic component 3 is in the same plane as the first principal surface 2a or the second principal surface 2b of the resin layer 2. Furthermore, in a structure in which the fourth principal surface 31b of the chip-type electronic component 3 is arranged on the side of the first principal surface 2a of the resin layer 2, the external terminal electrode 7 is provided on the outer principal surface of the second wiring layer 6 instead of being provided on the outer principal surface of the first wiring layer 5. Furthermore, the connection electrode layers 521 to 523 of the first thin-film conductive layer 52 are formed by the second thin-film conductive layer 62 instead of being formed by the first thin-film conductive layer 52 .

[0126] (Implementation 6)

[0127] In Embodiment 6, an example of a high-frequency module 300 including the resin mold component 1 of Embodiment 1 is described. In addition, the high-frequency module 300 may include any of the resin mold components 1 of Embodiments 2 to 5 instead of the resin mold component 1 of Embodiment 1.

[0128] As an example, the high frequency module 300 has the same circuit configuration as the high frequency module 200 described in the fourth embodiment (see Figure 8 In the high frequency module 300, for example, the above circuit structure is formed by the resin mold component 1 (see Figure 8 ) within the range W2 of the chip-type electronic components (power amplifier 211 and output matching circuit 212).

[0129] like Fig.11 As shown, the high frequency module 300 includes a mounting substrate 301, a plurality of external connection electrodes 302, a plurality of chip-type electronic components 303, a resin mold component 1, a first resin layer 304 and a second resin layer 305, and a shielding layer 306. The plurality of external connection electrodes 302 include an antenna terminal 201, a signal input terminal 202, and a signal output terminal 203.

[0130] The resin model component 1 has Figure 8 In the circuit structure of, for example, the chip-type electronic components (i.e., the power amplifier 211 and the output matching circuit 212) within the range W2. The plurality of chip-type electronic components 303 are Figure 8 The chip-type electronic components other than the power amplifier 211 and the output matching circuit 212 in the circuit structure.

[0131] The mounting substrate 301 is a substrate for mounting a plurality of chip-type electronic components 303. The mounting substrate 301 has two main surfaces (a fifth main surface 301a and a sixth main surface 301b) facing each other in the thickness direction D2 of the mounting substrate 301.

[0132] On the fifth main surface 301a of the mounting substrate 301, for example, the resin mold component 1 and the matching circuits 209, 210, 214 and the duplexers 207, 208 among the plurality of chip-type electronic components 303 are mounted. Fig.11 In FIG. 1 , only the matching circuit 209 and the duplexer 207 are shown among the chip-type electronic component 303 (that is, the matching circuits 209 , 210 , 214 and the duplexers 207 , 208 ) mounted on the fifth main surface 301 a of the mounting substrate 301 .

[0133] A plurality of external connection electrodes 302 and a low noise amplifier 213, a first switch 204, a second switch 205, and a third switch 206 among a plurality of chip-type electronic components 303 are mounted on the sixth main surface 301b of the mounting substrate 301. Fig.11 , only the low noise amplifier 213 and the first switch 204 are shown among the chip-type electronic components 303 (i.e., the low noise amplifier 213, the first switch 204, the second switch 205, and the third switch 206) mounted on the sixth main surface 301b of the mounting substrate 301. In addition, only the antenna terminal 201 and the signal input terminal 202 are shown among the plurality of external connection electrodes 302.

[0134] The first resin layer 304 is provided on the fifth main surface 301 a of the mounting substrate 301 . The first resin layer 304 covers the resin mold component 1 and the plurality of chip-type electronic components 303 mounted on the fifth main surface 301 a of the mounting substrate 301 .

[0135] The second resin layer 305 is provided on the sixth main surface 301b of the mounting substrate 301. The second resin layer 305 covers the plurality of external connection electrodes 302 and the plurality of chip-type electronic components 303 mounted on the sixth main surface 301b of the mounting substrate 301. More specifically, the second resin layer 305 covers the entire outer surface of the chip-type electronic component 303. In addition, the second resin layer 305 exposes the front end surface of the external connection electrode 302 and covers the surface other than the front end surface (peripheral surface).

[0136] The shielding layer 306 is, for example, metal. The shielding layer 306 is provided on the outer surface (outer peripheral surface and outer main surface) of the first resin layer 304, the outer peripheral surface of the second resin layer 305, and the outer peripheral surface of the mounting substrate 301. More specifically, the shielding layer 306 covers the entire outer surface of the first resin layer 304, the entire outer peripheral surface of the mounting substrate 301, and a portion of the outer peripheral surface of the second resin layer 305.

[0137] According to the sixth embodiment, it is possible to provide the high-frequency module 300 having the advantages of the resin mold component 1 .

[0138] (Way)

[0139] The following aspects are disclosed through the above-described embodiment and modified examples.

[0140] A resin mold component (1) of the first embodiment comprises a resin layer (2), at least one chip-type electronic component (3A, 3B), a first inorganic thin film insulating layer (51), and a first thin film conductive layer (52). The resin layer (2) has a first main surface (2a) and a second main surface (2b) facing each other. At least one chip-type electronic component (3A, 3B) is arranged inside the resin layer (2). The first inorganic thin film insulating layer (51) is arranged on the first main surface (2a) of the resin layer (2). The first thin film conductive layer (52) is arranged on the first inorganic thin film insulating layer (51).

[0141] According to this structure, since the first inorganic thin film insulating layer (51) is formed of an inorganic material, the first inorganic thin film insulating layer (51) can be made thinner compared to a structure in which a resin or ceramic is provided on the first main surface (2a) of the resin layer (2). As a result, the resin mold component (1) can be easily made thinner.

[0142] The resin mold component (1) of the second embodiment is provided in the first embodiment, further comprising a second inorganic thin film insulating layer (61) and a second thin film conductive layer (62). The second inorganic thin film insulating layer (61) is provided on the second main surface (2b) of the resin layer (2). The second thin film conductive layer (62) is provided on the second inorganic thin film insulating layer (61).

[0143] According to this structure, since the second inorganic thin film insulating layer (61) is formed of an inorganic material, the second inorganic thin film insulating layer (61) can be made thinner compared to a structure in which a resin or ceramic is provided on the second main surface (2b) of the resin layer (2). As a result, in a structure in which inorganic thin film insulating layers (a first inorganic thin film insulating layer (51) and a second inorganic thin film insulating layer (61)) and thin film conductive layers (a first thin film conductive layer (52) and a thin film conductive layer (62)) are provided on both main surfaces (a first main surface (2a) and a second main surface (2b)) of the resin layer (2), it is easy to further reduce the thickness of the resin mold component (1).

[0144] In the resin mold component (1) of the third aspect, in the second aspect, at least one of the first inorganic thin film insulating layer (51) and the second inorganic thin film insulating layer (61) is an oxide film, a nitride film or a nitride oxide film.

[0145] According to this structure, at least one of the first inorganic thin film insulating layer (51) and the second inorganic thin film insulating layer (61) can be easily formed into a thin film.

[0146] A resin mold component (1) of a fourth embodiment comprises a plurality of chip-type electronic components (3) in the second or third embodiment. The plurality of chip-type electronic components (3A, 3B) include a first IC chip (14A; 14C) and a second IC chip (14B). The first IC chip (14A; 14C) includes a first amplifier (121b) on the signal input side of a plurality of amplifiers constituting a power amplifier (12). The second IC chip (14B) includes a second amplifier (123a, 123b) on the signal output side of a plurality of amplifiers constituting a power amplifier (12).

[0147] According to this structure, the first amplifier (121b) and the second amplifier (123a, 123b) constituting the power amplifier (12) can be formed by one component (resin mold component (1)), and the resin mold component (1) can be easily thinned.

[0148] In a resin mold component (1) of a fifth embodiment, in the fourth embodiment, at least one of the first thin film conductive layer (52) and the second thin film conductive layer (62) includes an output matching circuit (13) connected to an output portion of the second amplifier (123a, 123b). The output matching circuit (13) overlaps with the second IC chip (14B) when viewed from above in the thickness direction (D1) of the resin layer (2).

[0149] According to this structure, since the output matching circuit (13) is included in at least one of the first thin film conductive layer (52) and the second thin film conductive layer (62), in a structure in which the resin mold component (1) includes the output matching circuit (13), it is easy to make the resin mold component (1) thinner. In addition, since the output matching circuit (13) overlaps with the second IC chip (14B), it is possible to ensure electromagnetic isolation between the output matching circuit (13) and other components in the resin mold component (1).

[0150] In the resin mold component (1) of the sixth aspect, in the fourth or fifth aspect, the first IC chip (14A) includes a matching circuit (122) connected to an output portion of the first amplifier (121b).

[0151] According to this configuration, since the matching circuit (122) and the first amplifier (121b) are included in the same first IC chip (14A), it is easy to adjust the impedance matching between the matching circuit (122) and the first amplifier (121b).

[0152] In the resin mold component (1) of the seventh aspect, in the fourth or fifth aspect, at least one of the first thin film conductive layer (52) and the second thin film conductive layer (62) includes a matching circuit (122) connected to the output portion of the first amplifier (121b).

[0153] According to this structure, since at least one of the first thin film conductive layer (52) and the second thin film conductive layer (62) includes the matching circuit (122), that is, the first IC chip (14C) does not include the matching circuit (122), the first IC chip (14C) can be miniaturized.

[0154] The resin mold component (1) of the eighth aspect comprises a plurality of chip-type electronic components (3) in the second or third aspect. The plurality of chip-type electronic components (3A, 3B) include a transmitting component (18; 211) through which a transmitting signal passes, and a receiving component (19; 213) through which a receiving signal passes.

[0155] According to this structure, the transmitting component (18; 211) and the receiving component (19; 213) can be integrated into one component (resin mold component (1)), and the resin mold component (1) can be easily thinned.

[0156] In the resin molded component (1) of the ninth aspect, in the eighth aspect, one of the first thin film conductive layer (52) and the second thin film conductive layer (62) includes a first circuit (212) connected to the transmitting component (211), and the other of the first thin film conductive layer (52) and the second thin film conductive layer (62) includes a second circuit (214) connected to the receiving component (213).

[0157] According to this structure, the transmitting component (211), the receiving component (213), the first circuit (212), and the second circuit (214) can be integrated into one component (resin mold component (1)), and the resin mold component (1) can be easily thinned. In addition, the first circuit (212) and the second circuit (214) can be separately arranged on the front and back surfaces of the resin layer (2) of the resin mold component (1). As a result, the electromagnetic isolation between the first circuit (212) and the second circuit (214) can be ensured.

[0158] In the resin mold component (1) of the tenth aspect, in the eighth aspect, the transmitting component (18) is a transmitting filter (18), the receiving component (19) is a receiving filter (19), and at least one of the first thin film conductive layer (52) and the second thin film conductive layer (62) includes a matching circuit (17) connected to both an output portion of the transmitting filter (18) and an input portion of the receiving filter (19).

[0159] According to this structure, a duplexer (16) having a transmission filter (18) and a reception filter (19) and a matching circuit (17) connected to the duplexer (16) can be integrated into one component (resin mold component (1)), and the resin mold component (1) can be easily thinned.

[0160] In the resin mold component (1) of the eleventh embodiment, in any one of the first to tenth embodiments, the chip-type electronic component (3A, 3B) has a component body (31) and a pad electrode (32). The component body (31) has a third main surface (31a) and a fourth main surface (31b) facing each other. The pad electrode (32) is provided on the third main surface (31a). The fourth main surface (31b) of the component body (31) is coplanar with the first main surface (2a) or the second main surface (2b) of the resin layer (2).

[0161] According to this structure, the fourth main surface (31b) of the chip-type electronic component (3A, 3B) is coplanar with the first main surface (2a) or the second main surface (2b) of the resin layer (2). Therefore, the thickness (D1) of the resin layer (2) can be reduced in accordance with the fact that the fourth main surface (31b) of the chip-type electronic component (3A, 3B) is not covered by the resin layer (2). As a result, it is easy to further reduce the thickness of the resin mold component (1).

[0162] A high-frequency module (300) according to a twelfth aspect comprises any one of the resin mold components (1) according to the first to eleventh aspects and a mounting substrate (301) on which the resin mold component (1) is arranged.

[0163] According to this structure, a high-frequency module (300) having the advantages of the resin mold component (1) can be provided.

[0164] Description of Reference Numerals

[0165] 1…resin mold component, 2…resin layer, 2a…first main surface, 2b…second main surface, 3, 3A, 3B…chip type electronic component, 4…connection electrode, 5…first wiring layer, 5a…outer main surface, 6…second wiring layer, 7, 7a to 7d…external terminal electrode, 10…input terminal, 11…output terminal, 12…power amplifier, 13…output matching circuit, 13p…input section, 13q…output section, 14A, 14C…first IC chip, 14B…second IC chip, 15A…input terminal, 15B…output terminal, 15C…input / output terminal, 16…duplexer, 17…matching circuit, 17a…one end, 17b…one end, 18…transmission filter (transmission component), 18a…output 18b…output portion, 19…receiving filter (receiving component), 19a…input portion, 19b…output portion, 21…RF signal processing circuit, 22…baseband signal processing circuit, 31…component body, 31a…third main surface, 31b…fourth main surface, 31c…peripheral surface, 32, 32a to 32f…pad electrode, 32s…contact surface, 51…first inorganic thin film insulating layer, 52…first thin film conductive layer, 52a…conductive layer, 52b, 52c, 52d…through-hole electrode, 61…second inorganic thin film insulating layer, 62…second thin film conductive layer, 62a…conductive layer, 62b, 62c, 62u…through-hole electrode, 121…driving stage, 121a…matching circuit, 121b…first amplifier , 121p…input part, 121q…output part, 122…inter-stage matching circuit (matching circuit), 122p…input part, 122q…output part, 123…final stage, 123a…second amplifier, 123b…second amplifier, 123p…input part, 123q…output part, 200…high frequency module, 201…antenna terminal, 202…signal input terminal, 203…signal output terminal, 204…first switch, 204a…common terminal, 204b…selection terminal, 204c…selection terminal, 205…second switch, 205a…common terminal, 205b…selection terminal, 205c…selection terminal, 206…third switch, 206a…common terminal, 206b…selection terminal, 206c…selection terminal, 207, 208…duplexer, 207R, 208R…receiving filter, 207T, 208T…transmitting filter, 209, 210…matching circuit, 211…power amplifier (transmitting component), 211a…input section, 211b…output section, 212…output matching circuit (first circuit), 212a…input section, 212b…output section, 213…low noise amplifier (receiving component), 213a…input section, 213b…output section, 214…matching circuit (second circuit), 214a…input section, 220…antenna, 230…signal processing circuit, 231…RF signal processing circuit, 232…baseband signal processing circuit, 300…high frequency module,301…mounting substrate, 301a…fifth main surface, 301b…sixth main surface, 302…external connection electrode, 303…chip type electronic component, 304…first resin layer, 305…second resin layer, 305a…fifth main surface, 306…shielding layer, 521, 522, 522a to 522c, 523…connection electrode layer, C1 to C4…capacitor, D1, D2…thickness direction, L1, L3…primary coil, L2, L4…secondary coil, N1, N2…branch point, T1, T2…transformer, W1, W2…range. ,

Claims

1. A resin model component, wherein: have: The resin layer has a first main surface and a second main surface facing each other; at least one chip-type electronic component disposed inside the resin layer; A first inorganic thin film insulating layer is provided on the first main surface of the resin layer; as well as The first thin film conductive layer is disposed on the first inorganic thin film insulating layer.

2. The resin mold component according to claim 1, wherein Also available: A second inorganic thin film insulating layer is provided on the second main surface of the resin layer; and The second thin film conductive layer is disposed on the second inorganic thin film insulating layer.

3. The resin mold component according to claim 2, wherein: At least one of the first inorganic thin film insulating layer and the second inorganic thin film insulating layer is an oxide film, a nitride film, or a nitride oxide film.

4. The resin mold component according to claim 2 or 3, wherein: A plurality of the above-mentioned chip-type electronic components are provided, The plurality of chip-type electronic components include: A first IC chip including a first amplifier, the first amplifier being an amplifier on the signal input side of a plurality of amplifiers constituting the power amplifier; and The second IC chip includes a second amplifier, and the second amplifier is an amplifier on the signal output side of the plurality of amplifiers constituting the power amplifier.

5. The resin mold component according to claim 4, wherein: At least one of the first thin film conductive layer and the second thin film conductive layer includes an output matching circuit connected to an output portion of the second amplifier. The output matching circuit overlaps with the second IC chip when viewed from above in the thickness direction of the resin layer.

6. The resin mold component according to claim 4 or 5, wherein: The first IC chip includes a matching circuit connected to an output portion of the first amplifier.

7. The resin mold component according to claim 4 or 5, wherein: At least one of the first thin-film conductive layer and the second thin-film conductive layer includes a matching circuit connected to an output portion of the first amplifier.

8. The resin mold component according to claim 2 or 3, wherein: A plurality of the above-mentioned chip-type electronic components are provided, The plurality of chip-type electronic components include: a transmission component through which a transmission signal passes; and A receiving component through which the received signal passes.

9. The resin mold component according to claim 8, wherein: One of the first thin film conductive layer and the second thin film conductive layer includes a first circuit connected to the transmitting component. The other of the first thin-film conductive layer and the second thin-film conductive layer includes a second circuit connected to the receiving component.

10. The resin mold component according to claim 8, wherein The transmission component is a transmission filter. The receiving component is a receiving filter. At least one of the first thin-film conductive layer and the second thin-film conductive layer includes a matching circuit connected to both an output portion of the transmission filter and an input portion of the reception filter.

11. The resin mold component according to any one of claims 1 to 10, wherein The chip-type electronic component has: A component body having a third main surface and a fourth main surface facing each other; and A pad electrode is provided on the third main surface. The fourth main surface of the component body is flush with the first main surface or the second main surface of the resin layer.

12. A high frequency module, wherein: have: The resin mold component according to any one of claims 1 to 11; and The mounting substrate is provided with the above-mentioned resin model parts.

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