A method, system and single crystal for growing a low resistivity silicon carbide single crystal

By setting a buffer layer and controlling the growth conditions in the growth of silicon carbide single crystals, the problems of lattice distortion and dislocation multiplication were solved, and the growth of high-quality, low-resistivity silicon carbide single crystals was achieved, which are suitable for power electronic devices.

CN119571462BActive Publication Date: 2026-06-09SHANDONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANDONG UNIV
Filing Date
2024-12-03
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

Existing technologies struggle to address issues such as lattice distortion, severe dislocation multiplication, and unstable crystal structure in the growth of low-resistivity silicon carbide single crystals. In particular, at high doping concentrations, it is impossible to achieve the growth of high-quality, low-resistivity silicon carbide single crystals. Furthermore, existing methods may introduce impurities that affect purity.

Method used

By setting up a buffer layer with special growth conditions, controlling the N partial voltage in the internal environment of crystal growth and the C/Si ratio at the crystal growth front, heavy doping is achieved using a low-temperature large-axis ladder, reducing the resistivity of silicon carbide single crystals, and using metal carbide particles to stabilize the growth interface and prevent impurities from entering.

Benefits of technology

High-quality growth of low-resistivity silicon carbide single crystals has been achieved, with resistivity below 5 mΩ·cm, doping concentration above 5×10¹⁹ cm⁻³, and dislocation density below 0.2%, making them suitable for power electronic devices and reducing conduction losses.

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Abstract

The application belongs to the technical field of crystal growth, and provides a growth method, system and single crystal of low-resistivity silicon carbide, which uniformly spreads silicon carbide powder on the bottom of a graphite crucible, uniformly spreads metal carbide material particles on the surface of the silicon carbide powder, and bonds a silicon carbide seed crystal on the top of the graphite crucible; the graphite crucible is sealed and vacuumized; the vacuumized graphite crucible is heated, and a carrier gas is filled into the graphite crucible, then the carrier gas is slowly replaced by a doping source gas, the growth pressure is slowly increased to a set pressure, and a buffer layer is grown; when the growth of the buffer layer is completed, the growth conditions are changed to grow a heavily doped silicon carbide single crystal; when the crystal growth is completed, the vacuumized graphite crucible is cooled to naturally cool the crystal, and a low-resistivity silicon carbide single crystal is obtained. The application can increase the doping concentration of the silicon carbide single crystal and reduce the resistivity of the silicon carbide material.
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