A method and device for analyzing component failure under high overload environment

Abstract

The present application provides a method and device for analyzing component failure in a high overload environment, which relates to the field of computer technology. The method includes determining a missile-borne PCB to be analyzed, wherein the missile-borne PCB to be analyzed includes multiple missile-borne components to be analyzed; determining a target missile-borne component from the multiple missile-borne components to be analyzed; obtaining a target position of the target missile-borne component in the missile-borne PCB to be analyzed; detecting the target position of the missile-borne PCB to be analyzed to obtain a target curvature at the target position; determining whether the target curvature is greater than a critical curvature corresponding to the target position to obtain a first judgment result; if the first judgment result indicates that the target curvature is greater than the critical curvature, determining that the target missile-borne component has failed. The method can perform failure analysis on surface mount components and provide effective guidance for failure research of surface mount components in a high overload environment.

Description

Technical Field

[0001] The present application relates to the field of computer technology, and in particular to a method and device for analyzing component failure in a high overload environment. Background Art

[0002] Surface Mount Components (SMC) refer to components mounted on a printed circuit board (PCB) using surface mount technology (SMT). As the core components of missile-borne electronic equipment, surface mount components will be subjected to an instantaneous high overload of tens of thousands of G during the firing process, which may cause the surface mount components to fail.

[0003] In order to ensure the effective operation of missile-borne electronic equipment, it is necessary to perform failure analysis on surface mount components. Therefore, the industry needs a method for performing failure analysis on surface mount components. Summary of the invention

[0004] The present application provides a component failure analysis method and device in a high overload environment, which can perform failure analysis on surface mount components and provide effective guidance for failure research of surface mount components in a high overload environment.

[0005] In order to achieve the above objectives, this application adopts the following technical solutions:

[0006] In a first aspect, the present application provides a method for analyzing component failure under a high overload environment, the method comprising:

[0007] Determine a missile-borne PCB to be analyzed, wherein the missile-borne PCB to be analyzed includes a plurality of missile-borne components to be analyzed;

[0008] Determining a target missile-borne component from the plurality of missile-borne components to be analyzed;

[0009] Obtaining the target position of the target missile-borne component in the missile-borne PCB to be analyzed;

[0010] Detecting the target position of the PCB to be analyzed to obtain a target curvature at the target position;

[0011] Determine whether the target curvature is greater than a critical curvature corresponding to the target position, and obtain a first determination result;

[0012] If the first judgment result indicates that the target curvature is greater than the critical curvature, it is determined that the target missile-borne component has failed.

[0013] In some possible implementations, the method further includes:

[0014] If the first judgment result indicates that the target curvature is not greater than the critical curvature, it is determined that the target missile-borne components have not failed.

[0015] In some possible implementations, detecting the target position of the PCB to be analyzed to obtain the target curvature at the target position includes:

[0016] Detecting the target position of the PCB to be analyzed to obtain a detection result;

[0017] If the detection result indicates that the target missile-borne component does not contact surrounding missile-borne components, a target curvature at the target position is determined to be a first value, and the first value is lower than a value corresponding to the critical curvature.

[0018] In some possible implementations, the method further includes:

[0019] If the detection result indicates that the target missile-borne component is in contact with surrounding missile-borne components, obtain a first distance between the position of the surrounding missile-borne components in contact with the target missile-borne component in the PCB and the position of the target missile-borne component in the PCB, as well as a first height of the target missile-borne component;

[0020] A target curvature at the target position is determined according to the first distance and the first height.

[0021] In some possible implementations, determining the target curvature at the target position according to the first distance and the first height includes:

[0022]

[0023] in, represents the target curvature at the target position, represents the first distance, Indicates the first height.

[0024] In some possible implementations, the critical curvature of the target position is determined by:

[0025] Acquire a critical curvature of a previous position of the target position and a critical curvature of a next position of the target position;

[0026] According to the critical curvature of the previous position of the target position and the critical curvature of the next position of the target position, linear interpolation is performed to obtain the critical curvature of the target position; or,

[0027] An air cannon experiment with different load gradients is used to obtain multiple curvatures at the target position; the multiple curvatures at the target position include a minimum curvature at which the target missile-borne component fails and a maximum curvature at which the target missile-borne component does not fail;

[0028] The average value of the minimum curvature of the target missile-borne component failure and the maximum curvature of the target missile-borne component not failure is used as the critical curvature of the target position.

[0029] In some possible implementations, the missile-borne components to be analyzed are surface mount components.

[0030] In a second aspect, the present application provides a device for analyzing component failure under a high overload environment, the device comprising:

[0031] A determination module is used to determine a missile-borne PCB to be analyzed, wherein the missile-borne PCB to be analyzed includes a plurality of missile-borne components to be analyzed; and to determine a target missile-borne component from the plurality of missile-borne components to be analyzed;

[0032] An acquisition module, used for acquiring a target position of the target missile-borne component in the missile-borne PCB to be analyzed;

[0033] A detection module, used to detect the target position of the PCB to be analyzed, and obtain the target curvature at the target position;

[0034] A judgment module, used for judging whether the target curvature is greater than a critical curvature corresponding to the target position, and obtaining a first judgment result;

[0035] The analysis module is used to determine that the target missile-borne component has failed if the first judgment result indicates that the target curvature is greater than the critical curvature.

[0036] In some possible implementations, the analysis module is further configured to determine that the target missile-borne component has not failed if the first judgment result indicates that the target curvature is not greater than the critical curvature.

[0037] In some possible implementations, the detection module is specifically used to detect the target position of the missile-borne PCB to be analyzed and obtain a detection result; if the detection result indicates that the target missile-borne component does not contact the surrounding missile-borne components, then the target curvature at the target position is determined to be a first value, and the first value is lower than the value corresponding to the critical curvature.

[0038] In some possible implementations, the detection module is specifically used to obtain a first distance between positions of surrounding missile-borne components in contact with the target missile-borne component in the PCB and a first height of the target missile-borne component if the detection result indicates that the target missile-borne component is in contact with surrounding missile-borne components; and determine a target curvature at the target position based on the first distance and the first height.

[0039] In some possible implementations, the detection module is specifically configured to determine the target curvature at the target position by using the following formula:

[0040]

[0041] in, represents the target curvature at the target position, represents the first distance, Indicates the first height.

[0042] In some possible implementations, the critical curvature of the target position is determined by:

[0043] Acquire a critical curvature of a previous position of the target position and a critical curvature of a next position of the target position;

[0044] According to the critical curvature of the previous position of the target position and the critical curvature of the next position of the target position, linear interpolation is performed to obtain the critical curvature of the target position; or,

[0045] An air cannon experiment with different load gradients is used to obtain multiple curvatures at the target position; the multiple curvatures at the target position include a minimum curvature at which the target missile-borne component fails and a maximum curvature at which the target missile-borne component does not fail;

[0046] The average value of the minimum curvature of the target missile-borne component failure and the maximum curvature of the target missile-borne component not failure is used as the critical curvature of the target position.

[0047] In some possible implementations, the missile-borne components to be analyzed are surface mount components.

[0048] In a third aspect, the present application provides a computing device, including a memory and a processor;

[0049] One or more computer programs are stored in the memory, and the one or more computer programs include instructions; when the instructions are executed by the processor, the computing device executes the method as described in any one of the first aspects.

[0050] In a fourth aspect, the present application provides a computer-readable storage medium, wherein the computer-readable storage medium is used to store a computer program, and the computer program is used to execute the method as described in any one of the first aspects.

[0051] It can be seen from the above technical solution that the present application has at least the following beneficial effects:

[0052] The present application provides a component failure analysis method under a high overload environment, which can be performed by an analysis device, and the method includes: the analysis device first determines a missile-borne PCB to be analyzed, the PCB includes multiple missile-borne components to be analyzed, and then determines a target missile-borne component from the multiple missile-borne components to be analyzed, obtains the target position of the target missile-borne component in the missile-borne PCB to be analyzed, and then detects the target position of the missile-borne PCB to be analyzed to obtain a target curvature at the target position, and if the target curvature is greater than the critical curvature corresponding to the target position, it is determined that the target missile-borne component has failed. The present application provides a method for analyzing whether a surface mount component on a PCB has failed under a high overload environment, and provides effective guidance for the failure research of surface mount components under a high overload environment.

[0053] It should be understood that the description of technical features, technical solutions, beneficial effects or similar language in this application does not imply that all features and advantages can be realized in any single embodiment. On the contrary, it is understood that the description of features or beneficial effects means that specific technical features, technical solutions or beneficial effects are included in at least one embodiment. Therefore, the description of technical features, technical solutions or beneficial effects in this specification does not necessarily refer to the same embodiment. Furthermore, the technical features, technical solutions and beneficial effects described in the present embodiment can also be combined in any appropriate manner. Those skilled in the art will understand that the embodiment can be realized without one or more specific technical features, technical solutions or beneficial effects of a specific embodiment. In other embodiments, additional technical features and beneficial effects can also be identified in a specific embodiment that does not embody all embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] Figure 1 A flowchart of a failure analysis method provided in an embodiment of the present application;

[0055] Figure 2 A schematic diagram of a PCB provided in an embodiment of the present application;

[0056] Figure 3 A schematic diagram of a failure analysis device provided in an embodiment of the present application;

[0057] Figure 4 A schematic diagram of a computing device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0058] The terms "first", "second", "third", etc. in the specification of this application and the accompanying drawings are used to distinguish different objects rather than to limit a specific order.

[0059] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0060] In order to ensure the effective operation of missile-borne electronic equipment, it is necessary to analyze whether the surface mount components have failed. In traditional solutions, the analysis process of whether the surface mount components have failed is usually based on the material and structure, and the surface mount components are analyzed individually, but there is a lack of analysis at the PCB level.

[0061] Especially in high overload environments, the bending deformation of the PCB and other components on the PCB will inevitably affect the surface mount components. Therefore, from the PCB level, analyzing whether the surface mount components on the PCB are failed is a technical problem that needs to be solved.

[0062] In view of this, an embodiment of the present application provides a method for analyzing component failure in a high overload environment, which can be performed by an analysis device, which can be a terminal or a server. Terminals include but are not limited to smartphones, tablet computers, laptops, personal digital assistants, or smart wearable devices. The server can be a cloud server, such as a central server in a central cloud computing cluster, or an edge server in an edge cloud computing cluster. Of course, the server can also be a server in a local data center. A local data center refers to a data center directly controlled by a user. Compared with traditional solutions, an embodiment of the present application provides a target curvature and a critical curvature of a target missile-borne component at a target position on a PCB to determine whether the target missile-borne component has failed, which not only improves the efficiency of the analysis, but also improves the accuracy of the analysis, thereby providing effective guidance for the failure research of surface mount components in a high overload environment.

[0063] In order to make the technical solution of the present application clearer and easier to understand, the technical solution of the present application is introduced below in conjunction with the accompanying drawings. Figure 1 As shown, the figure is a flow chart of a failure analysis method provided in an embodiment of the present application, the method comprising:

[0064] S101, the analysis device determines the bomb-borne PCB to be analyzed.

[0065] The PCB to be analyzed includes multiple components to be analyzed, which may be surface mount components. In some examples, the analysis device may analyze each component to be analyzed on the PCB, or stop the analysis after analyzing a failed component. The specific analysis method is not limited in the embodiment of the present application. The following is an introduction taking the analysis of a certain component as an example.

[0066] S102: The analysis device determines a target missile-borne component from a plurality of missile-borne components to be analyzed.

[0067] The analysis device can determine the target missile-borne components from multiple missile-borne components to be analyzed. The target missile-borne components refer to the components to be analyzed currently. The analysis device can randomly select the target missile-borne components from multiple missile-borne components to be analyzed. In other examples, the analysis device can first obtain the distance between the missile-borne components to be analyzed and the surrounding missile-borne components, and prioritize components with a small distance to be determined as target missile-borne components. The smaller the distance between components, the higher the possibility that the components will fail in a high overload environment. Therefore, prioritizing the analysis of these components with a high possibility of failure can improve the analysis efficiency, and after determining that there are failed components, other components on the PCB will no longer be analyzed, further improving the analysis efficiency.

[0068] S103: The analysis device obtains the target position of the target missile-borne component in the missile-borne PCB to be analyzed.

[0069] After the analysis device determines the target missile-borne component, the target position of the target missile-borne component in the missile-borne PCB to be analyzed can be determined, because the critical curvatures at different positions are different.

[0070] S104, the analysis device detects the target position of the PCB to be analyzed, and obtains the target curvature at the target position.

[0071] After the analysis device determines the target position of the bullet-borne PCB to be analyzed, the target position can be detected to obtain the target curvature at the target position.

[0072] In some embodiments, the analysis device can detect the target position of the missile-borne PCB to be analyzed and obtain the detection result. For example, the target position can be photographed, and then the target missile-borne components are analyzed to see if they are in contact with the surrounding missile-borne components. If the detection result indicates that the target missile-borne components are not in contact with the surrounding missile-borne components, the target curvature at the target position is determined to be a first value, wherein the first value is lower than the value corresponding to the critical curvature. In other words, when the analysis device determines that the target missile-borne components are not in contact with the surrounding missile-borne components, it is considered that the target missile-borne components have not failed, so there is no need to calculate the target curvature of the target position, thereby improving the analysis efficiency. Because, in the process of calculating the target curvature of the target position, it is necessary to scan the target position using X-ray three-dimensional CT scanning technology. When the target missile-borne components are not in contact with the surrounding missile-borne components, there is no need to perform subsequent scanning operations, thereby saving time and improving the analysis efficiency.

[0073] In other embodiments, if the detection result indicates that the target missile-borne component is in contact with surrounding missile-borne components, the analysis device obtains a first distance between the position of the surrounding missile-borne components in contact with the target missile-borne component in the PCB and the position of the target missile-borne component in the PCB, as well as a first height of the target missile-borne component, and then determines the target curvature at the target position based on the first distance and the first height.

[0074] like Figure 2 As shown, this figure is a schematic diagram of a PCB provided in an embodiment of the present application. The PCB includes a target missile-borne component 201 and surrounding missile-borne components 202 in contact with the target missile-borne component 201. It can be seen from the figure that a triangular gap is formed between the target missile-borne component 201, the surrounding missile-borne components 202 and the board surface of the PCB. Since the angle between the target missile-borne component 201 (such as a chip capacitor) and the surrounding missile-borne components 202 (such as a pin header) is relatively small, the base of this triangle can be regarded as a straight line, and then through geometric relationship deduction, it can be concluded that this is an isosceles triangle and satisfies the following geometric relationship:

[0075]

[0076]

[0077] in, is the first height of the target missile-borne component 201, for example =0.95mm, is a first distance between the target missile-borne component 201 and the surrounding missile-borne components 202, =0.20mm, is the angle between the tangent line of the gap base of the triangle at point A and the horizontal plane, is the angle between the tangent line of the gap base of the triangle at point B and the horizontal plane, is the target curvature at the target position. is the tangent angle, that is =β-α; About Since the gap is an isosceles triangle, the gap after bending deformation can be regarded as a fan-shaped area. The straight-line distance between point A and point B (i.e. the first distance) can be regarded as the chord length of this arc. When the angle β-α corresponding to the arc length is small, there is Therefore, in the embodiment of the present application, let = .

[0078] S105. The analysis device determines whether the target curvature is greater than a critical curvature corresponding to the target position.

[0079] The analysis device determines whether the target curvature is greater than the critical curvature corresponding to the target position, and obtains a first judgment result. If the first judgment result indicates that the target curvature is greater than the critical curvature corresponding to the target position, S106 is executed. If the first judgment result indicates that the target curvature is not greater than the critical curvature corresponding to the target position, S107 is executed.

[0080] In some embodiments, the analysis device may pre-store a first mapping relationship between various positions and critical curvatures. After the analysis device determines the target position, the critical curvature corresponding to the target position is determined based on the first mapping relationship. Further, the analysis device may also store a second mapping relationship corresponding to each type of PCB and the first mapping relationship, that is, different PCBs have different first mapping relationships. After the analysis device determines the missile-borne PCB to be analyzed, it may first determine the first mapping relationship corresponding to the missile-borne PCB to be analyzed based on the second mapping relationship, and then determine the critical curvature corresponding to the target position based on the target position and the first mapping relationship.

[0081] The embodiments of the present application provide two methods for determining the critical curvature of the target position. In the first method, the analysis device can obtain the critical curvature of the previous position of the target position and the critical curvature of the next position of the target position, and then perform linear interpolation based on the critical curvature of the previous position of the target position and the critical curvature of the next position of the target position to obtain the critical curvature of the target position. In the first method, the analysis device first collects the critical curvature corresponding to some positions, and then performs fitting to obtain the functional relationship between the position and the critical curvature, and then determines the critical curvature corresponding to each position. The method of determining the critical curvature is more efficient.

[0082] The second method is that the analysis equipment uses air cannon experiments with different load gradients to obtain multiple curvatures at the target position, including the minimum curvature at which the target missile-borne components fail and the maximum curvature at which the target missile-borne components do not fail; then the average value of the minimum curvature at which the target missile-borne components fail and the maximum curvature at which the target missile-borne components do not fail is used as the critical curvature of the target position. In the second method, the analysis equipment uses a gradual approximation method to determine the critical curvature corresponding to the failure of the target missile-borne components at each position, and the accuracy of the critical curvature is higher.

[0083] Among them, the air cannon experimental scheme is shown in Table 1.

[0084] Table 1:

[0085]

[0086] The experimental scheme is multiple single impact tests and multiple cumulative impact tests. The acceleration load amplitude and pulse width of the multiple single impact tests are gradually increased. Then, the nanoVoxel-4000 series high-resolution X-ray three-dimensional micro-CT is used with a resolution of 2μs. The conical X-rays emitted by the micro-focus ray source penetrate the experimental sample and are projected onto the detector. At the same time, the sample is rotated 360 degrees relative to the ray source and the detector to collect thousands of frames of X-ray attenuation images. Then, 3D reconstruction is performed using the computer tomography imaging reconstruction method to obtain a three-dimensional stereo model of the sample, in which the relative density of the internal structure of the sample is positively correlated with the grayscale of the CT image, and the data detection results of the failure image are obtained.

[0087] Observing the failure detection results, it was found that the components of the first experiment did not fail due to damage, but the PCB was slightly bent; the components of the second experiment had a crack with a width of 0.102mm, and the PCB was bent and deformed; the components of the third experiment also broke, with a crack width of 0.372mm, and the PCB was also accompanied by bending and deformation; the components of the fourth cumulative impact experiment were the most seriously damaged, with a crack width of 0.401mm, and the PCB was significantly bent and deformed. In addition, it can be seen from the overall detection image that due to the bending and deformation of the PCB, the adjacent components are tilted and squeezed toward the SMT components.

[0088] It should be noted that the above experiments are merely exemplary introductions.

[0089] S106. The analysis device determines that the target missile-borne components have failed.

[0090] If the target curvature of the target position is greater than the critical curvature at the target position, the analysis determines that the target missile-borne components at the target position have failed.

[0091] S107. The analysis equipment determines that the target missile-borne components have not failed.

[0092] If the target curvature at the target position is not greater than the critical curvature at the target position, the analysis determines that the target missile-borne components at the target position have not failed.

[0093] Based on the above description, an embodiment of the present application provides a component failure analysis method under a high overload environment. The method can be performed by an analysis device, and the method includes: the analysis device first determines a missile-borne PCB to be analyzed, the PCB includes multiple missile-borne components to be analyzed, and then determines a target missile-borne component from the multiple missile-borne components to be analyzed, obtains the target position of the target missile-borne component in the missile-borne PCB to be analyzed, and then detects the target position of the missile-borne PCB to be analyzed to obtain a target curvature at the target position. If the target curvature is greater than the critical curvature corresponding to the target position, it is determined that the target missile-borne component has failed. The present application provides a method for analyzing whether a surface mount component on a PCB has failed under a high overload environment, and provides effective guidance for the failure research of surface mount components under a high overload environment.

[0094] Combination of the above Figure 1 to Figure 2 The component failure analysis method under a high overload environment provided in the embodiment of the present application is introduced in detail. The device and equipment provided in the embodiment of the present application will be introduced in conjunction with the accompanying drawings.

[0095] like Figure 3 As shown, this figure is a schematic diagram of a failure analysis device provided in an embodiment of the present application, and the device includes:

[0096] The determination module 301 is used to determine a missile-borne PCB to be analyzed, wherein the missile-borne PCB to be analyzed includes a plurality of missile-borne components to be analyzed; and to determine a target missile-borne component from the plurality of missile-borne components to be analyzed;

[0097] An acquisition module 302 is used to acquire a target position of the target missile-borne component in the missile-borne PCB to be analyzed;

[0098] A detection module 303 is used to detect the target position of the PCB to be analyzed and obtain the target curvature at the target position;

[0099] A judgment module 304 is used to judge whether the target curvature is greater than a critical curvature corresponding to the target position, and obtain a first judgment result;

[0100] The analysis module 305 is configured to determine that the target missile-borne component has failed if the first judgment result indicates that the target curvature is greater than the critical curvature.

[0101] In some possible implementations, the analysis module 305 is further configured to determine that the target missile-borne component has not failed if the first judgment result indicates that the target curvature is not greater than the critical curvature.

[0102] In some possible implementations, the detection module 303 is specifically used to detect the target position of the missile-borne PCB to be analyzed and obtain a detection result; if the detection result indicates that the target missile-borne component does not contact the surrounding missile-borne components, then the target curvature at the target position is determined to be a first value, and the first value is lower than the value corresponding to the critical curvature.

[0103] In some possible implementations, the detection module 303 is specifically used to obtain a first distance between the position of the surrounding missile-borne components in contact with the target missile-borne component in the PCB and the position of the target missile-borne component in the PCB, as well as a first height of the target missile-borne component if the detection result indicates that the target missile-borne component is in contact with surrounding missile-borne components; and determine a target curvature at the target position based on the first distance and the first height.

[0104] In some possible implementations, the detection module 303 is specifically configured to determine the target curvature at the target position by using the following formula:

[0105]

[0106] in, represents the target curvature at the target position, represents the first distance, Indicates the first height.

[0107] In some possible implementations, the critical curvature of the target position is determined by:

[0108] Acquire a critical curvature of a previous position of the target position and a critical curvature of a next position of the target position;

[0109] According to the critical curvature of the previous position of the target position and the critical curvature of the next position of the target position, linear interpolation is performed to obtain the critical curvature of the target position; or,

[0110] An air cannon experiment with different load gradients is used to obtain multiple curvatures at the target position; the multiple curvatures at the target position include a minimum curvature at which the target missile-borne component fails and a maximum curvature at which the target missile-borne component does not fail;

[0111] The average value of the minimum curvature of the target missile-borne component failure and the maximum curvature of the target missile-borne component not failure is used as the critical curvature of the target position.

[0112] In some possible implementations, the missile-borne components to be analyzed are surface mount components.

[0113] The device for analyzing component failure under high overload environment according to the embodiment of the present application may correspond to executing the method described in the embodiment of the present application, and the above-mentioned other operations and / or functions of each module / unit of the device for analyzing component failure under high overload environment are respectively to realize Figure 1 For the sake of brevity, the corresponding processes of each method in the illustrated embodiment are not described in detail here.

[0114] The embodiment of the present application also provides a computing device. The computing device may be an analysis device.

[0115] like Figure 4 As shown, this figure is a schematic diagram of a computing device provided in an embodiment of the present application, and the computing device 400 includes a bus 401, a processor 402, a communication interface 403 and a memory 404. The processor 402, the memory 404 and the communication interface 403 communicate with each other through the bus 401.

[0116] The bus 401 may be a peripheral component interconnect (PCI) bus or an extended industry standard architecture (EISA) bus. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 4 Only one thick line is used in the diagram, but this does not mean that there is only one bus or only one type of bus.

[0117] The processor 402 may be any one or more of a central processing unit (CPU), a graphics processing unit (GPU), a microprocessor (MP), or a digital signal processor (DSP).

[0118] The communication interface 403 is used for communicating with the outside.

[0119] The memory 404 may include a volatile memory, such as a random access memory (RAM). The memory 404 may also include a non-volatile memory, such as a read-only memory (ROM), a flash memory, a hard disk drive (HDD), or a solid state drive (SSD).

[0120] The memory 404 stores executable codes, and the processor 402 executes the executable codes to perform the aforementioned component failure analysis method under a high overload environment.

[0121] Specifically, in implementing Figure 3 In the case of the embodiment shown, and Figure 3 When each module or unit of the component failure analysis device under high overload environment described in the embodiment is implemented by software, the execution Figure 3 The software or program code required for the functions of each module / unit in the system may be partially or completely stored in the memory 404. The processor 402 executes the program code corresponding to each unit stored in the memory 404 to perform the above-mentioned component failure analysis method under high overload environment.

[0122] The embodiment of the present application also provides a computer-readable storage medium. The computer-readable storage medium can be any available medium that can be stored by a computing device or a data storage device such as a data center that contains one or more available media. The available medium can be a magnetic medium (such as a floppy disk, a hard disk, a tape), an optical medium (such as a DVD), or a semiconductor medium (such as a solid-state hard disk). The computer-readable storage medium includes instructions that instruct the computing device to execute the above-mentioned component failure analysis method under a high overload environment.

[0123] The embodiment of the present application further provides a computer program product, which includes one or more computer instructions. When the computer instructions are loaded and executed on a computing device, the process or function described in the embodiment of the present application is generated in whole or in part.

[0124] The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions may be transmitted from one website, computer or data center to another website, computer or data center via wired (e.g., coaxial cable, optical fiber, digital subscriber line) or wireless (e.g., infrared, wireless, microwave, etc.) means.

[0125] When the computer program product is executed by a computer, the computer executes any of the aforementioned methods for analyzing component failures in a high overload environment. The computer program product may be a software installation package, and when any of the aforementioned methods for analyzing component failures in a high overload environment is needed, the computer program product may be downloaded and executed on a computer.

[0126] The descriptions of the processes or structures corresponding to the above-mentioned figures have different emphases. For parts that are not described in detail in a certain process or structure, please refer to the relevant descriptions of other processes or structures.

[0127] The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application should be included in the protection scope of the present application.

Claims

1. A component failure analysis method under high overload environment, characterized in that: The method comprises: Determine a missile-borne PCB to be analyzed, wherein the missile-borne PCB to be analyzed includes a plurality of missile-borne components to be analyzed; Determining a target missile-borne component from the plurality of missile-borne components to be analyzed; Obtaining the target position of the target missile-borne component in the missile-borne PCB to be analyzed; Detecting the target position of the PCB to be analyzed to obtain a target curvature at the target position; Determine whether the target curvature is greater than a critical curvature corresponding to the target position, and obtain a first determination result; If the first judgment result indicates that the target curvature is greater than the critical curvature, it is determined that the target missile-borne component has failed; The detecting the target position of the PCB to be analyzed to obtain the target curvature at the target position includes: Detecting the target position of the PCB to be analyzed to obtain a detection result; If the detection result indicates that the target missile-borne component does not contact surrounding missile-borne components, determining that the target curvature at the target position is a first value, the first value being lower than a value corresponding to the critical curvature; If the detection result indicates that the target missile-borne component is in contact with surrounding missile-borne components, obtain a first distance between the position of the surrounding missile-borne components in contact with the target missile-borne component in the PCB and the position of the target missile-borne component in the PCB, as well as a first height of the target missile-borne component; determine a target curvature at the target position based on the first distance and the first height.

2. The method according to claim 1, characterized in that: The method further comprises: If the first judgment result indicates that the target curvature is not greater than the critical curvature, it is determined that the target missile-borne components have not failed.

3. The method according to claim 1, characterized in that The step of determining the target curvature at the target position according to the first distance and the first height includes: in, represents the target curvature at the target position, represents the first distance, Indicates the first height.

4. The method according to claim 1, characterized in that The critical curvature of the target position is determined by: Acquire a critical curvature of a previous position of the target position and a critical curvature of a next position of the target position; Performing linear interpolation according to the critical curvature of a previous position of the target position and the critical curvature of a next position of the target position to obtain the critical curvature of the target position; or, An air cannon experiment with different load gradients is used to obtain multiple curvatures at the target position; the multiple curvatures at the target position include a minimum curvature at which the target missile-borne component fails and a maximum curvature at which the target missile-borne component does not fail; The average value of the minimum curvature of the target missile-borne component failure and the maximum curvature of the target missile-borne component not failure is used as the critical curvature of the target position.

5. The method according to any one of claims 1 to 4, characterized in that: The missile-borne components to be analyzed are surface mount components.

6. A device for analyzing component failure under high overload conditions, characterized in that: The device comprises: A determination module is used to determine a missile-borne PCB to be analyzed, wherein the missile-borne PCB to be analyzed includes a plurality of missile-borne components to be analyzed; and to determine a target missile-borne component from the plurality of missile-borne components to be analyzed; An acquisition module, used for acquiring a target position of the target missile-borne component in the missile-borne PCB to be analyzed; A detection module, used to detect the target position of the PCB to be analyzed, and obtain the target curvature at the target position; A judgment module, used for judging whether the target curvature is greater than a critical curvature corresponding to the target position, and obtaining a first judgment result; an analysis module, configured to determine that the target missile-borne component has failed if the first judgment result indicates that the target curvature is greater than the critical curvature; The detection module is specifically used to detect the target position of the missile-borne PCB to be analyzed and obtain a detection result; if the detection result indicates that the target missile-borne component does not contact with surrounding missile-borne components, determine that the target curvature at the target position is a first value, and the first value is lower than the value corresponding to the critical curvature; if the detection result indicates that the target missile-borne component is in contact with surrounding missile-borne components, obtain a first distance between the position of the surrounding missile-borne components in contact with the target missile-borne component in the PCB and the position of the target missile-borne component in the PCB, and a first height of the target missile-borne component; determine the target curvature at the target position according to the first distance and the first height.

7. The device according to claim 6, characterized in that The analysis module is further configured to determine that the target missile-borne components have not failed if the first judgment result indicates that the target curvature is not greater than the critical curvature.

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