Substrate morphology measuring device and method

Abstract

The invention provides a morphology measurement device and method, and the device comprises a measurement unit which is used for measuring the morphology data of a substrate and comprises a bearing device and a plurality of detection devices located on the bearing device, and the detection devices can detect the morphology data of different positions of the substrate to form a data set; and the calculation unit is electrically connected with the plurality of detection devices and can calculate the morphological characteristics of the substrate according to the data set. According to the method that the measuring unit comprises the multiple detecting devices, the multiple detecting devices synchronously obtain the morphology data set of the substrate, the measuring error caused by wafer movement in optical detection in the traditional technology is reduced, and then the yield of chip production is improved. Meanwhile, the shape data set of the substrate is synchronously obtained by a plurality of detection devices of the measurement unit, and the substrate does not need to move in measurement, so that the measurement time is saved, and the chip manufacturing efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a substrate profile measuring device and method. Background Art

[0002] The morphology of the wafer is very important for wafer manufacturing. Thin film growth, lithography and other processes have requirements on the morphology of the wafer, which will affect the wafer flatness, size control, process consistency and stability of device performance.

[0003] The morphology of a wafer usually includes three measurement features: BOW value (wafer curvature) is one of the important factors affecting the manufacturing process and device performance. The control of BOW value requires reasonable regulation of factors such as temperature, material properties, and mechanical deformation during wafer preparation to ensure the flatness and stability of the wafer, thereby improving the manufacturing feasibility and performance stability of the device. TTV (total wafer thickness) changes will directly affect the size control and process consistency of the device. By controlling the overall thickness change of the wafer, the control accuracy of the device size can be improved, the process deviation can be reduced, and the reliability and consistency of the manufacturing process can be improved. Warp (overall wafer warpage) affects the contact and processing effect of the manufacturing equipment, and has a great impact on process steps such as lithography, thin film deposition, and various chemical processing. By controlling the warpage of the wafer, the contact uniformity and contact performance between the wafer and the equipment can be improved, thereby improving the accuracy of the manufacturing process and the stability of device performance.

[0004] The existing technology for measuring wafer morphology mostly uses optical technology. For example, optical focusing technology is used to measure BOW value. Figure 1 , which is a schematic diagram of a type of wafer morphology measurement device in the prior art. This technology uses a fixed light source 01 to emit light, which is reflected by the surface of the wafer 02 on the machine and reaches the receiving end 03. When the signal at the receiving end is the strongest, the Z-direction height of the reflection point is recorded. As the wafer 02 moves in the XY directions as the machine moves, the height difference of the surface morphology of the wafer 02 can be depicted, and then the BOW value can be obtained.

[0005] However, the prior art requires that the light source be fixed and replaced regularly according to wear and tear.

[0006] use Figure 1 When the device shown is measuring, the stage moves according to the measurement points set on the wafer, and the receiver calculates the received value. The process of measuring a complete wafer is long, so it takes a long time to measure a wafer, resulting in low efficiency. Summary of the invention

[0007] The problem solved by the present invention is to provide a substrate topography measurement method and device to improve the efficiency of substrate topography measurement.

[0008] To solve the above problems, the present invention provides a substrate morphology measuring device, comprising: a measuring unit, used to measure the morphology data of a substrate, including a carrying device and a plurality of detection devices located on the carrying device, wherein the detection devices can detect the morphology data of different positions of the substrate to form a data set; and a computing unit, wherein the computing unit is electrically connected to the plurality of detection devices and can calculate the morphology characteristics of the substrate according to the data set.

[0009] In an optional solution, the substrate is a wafer, the multiple detection devices are a probe array, the electrical parameter value of each probe in the probe array can change according to the unevenness of the wafer surface, and the electrical parameter values ​​of the probe array can form the data set.

[0010] In an optional solution, the electrical parameter value is a resistance value.

[0011] In an optional solution, the probe is a hydraulic telescopic probe, the length of which changes according to the concavity and convexity of the wafer surface, and the length of the probe is related to the resistance value of the probe.

[0012] In an optional solution, the plurality of probes are evenly arranged on the carrier at positions corresponding to the shape of the wafer.

[0013] In an optional scheme, the probe array includes a central probe, a first probe group, and a second probe group to an Nth probe group. The central probe corresponds to the center of the wafer. The first probe group, the second probe group to the Nth probe form a circular ring and are evenly arranged from the center of the wafer to the edge of the wafer. Each group of probes in the first probe group, the second probe group to the Nth probe is evenly arranged along the circumferential direction of the ring.

[0014] In an optional embodiment, the multiple probes include a central probe, a first probe group, a second probe group and a third probe group, the first probe group includes 8 probes arranged in a ring, the second probe group includes 16 probes arranged in a ring, and the third probe group includes 24 probes arranged in a ring.

[0015] In an optional solution, the data set provided by the probe array includes the surface center height h0 of the wafer provided by the central probe, and the first probe group, the second probe group to the Nth probe group provide a first height mean h1, a second height mean h2 to an nth height mean hn.

[0016] In an optional solution, the calculation unit is used to calculate the curvature of the wafer, and the calculation unit includes a comparison module, which compares the first height average h1, the second height average h2 to the nth height average hn and determines the maximum value thereof as the height peak hmax. The curvature of the wafer is

[0017] In an optional scheme, the calculation unit is used to calculate the total thickness deviation of the wafer, and the calculation unit includes a comparison module, which compares the surface center height h0, the first height mean h1, the second height mean h2 to the nth height mean hn and determines the maximum value therein as the height peak hmax, and determines the minimum value therein as the height valley hmin, and the total thickness deviation of the wafer is TTV=hmax-hmin.

[0018] In an optional solution, the calculation unit is used to calculate the warpage of the wafer. The central probe, the first probe group, the second probe group to the Nth probe group can provide the maximum value h01 of the wafer surface height and the minimum value h02 of the wafer surface height. The calculation unit calculates the warpage of the wafer as Warp=h02-h01.

[0019] In an optional solution, the hydraulic telescopic probe includes a sleeve and a telescopic probe located in the sleeve, and there is an elastic deformation liquid between the telescopic probe and the sleeve.

[0020] In an optional solution, the probe is a piezoresistive sensor.

[0021] In an optional solution, the substrate is glass, the multiple detection devices are a probe matrix, the electrical parameter value of each probe in the probe matrix can change according to the concavity and convexity of the glass surface, and the electrical parameter values ​​of the probe matrix can form the data set.

[0022] Correspondingly, the present invention also provides a substrate morphology measurement method, which uses any one of the measuring devices of the present invention to measure the morphology of the substrate surface; the substrate morphology measurement method comprises: placing the substrate on the supporting device; using the detection device to detect the morphology data of different positions of the substrate to form a data set; and the calculation unit calculates the morphological characteristics of the substrate based on the data set.

[0023] In an optional solution, the substrate is a wafer, and the step of measuring the morphology of the wafer surface includes: measuring the morphology of the wafer surface during the wafer transportation process of the semiconductor process.

[0024] Compared with the prior art, the technical solution of the present invention has the following advantages: the substrate morphology measurement device provided by the present invention includes a measuring unit for measuring the morphology data of the substrate, the measuring unit includes a carrying device and a plurality of detection devices located on the carrying device, the detection devices can detect the morphology data of different positions of the substrate to form a data set. The substrate morphology measurement device provided by the present invention also includes a calculation unit, the calculation unit is electrically connected to the plurality of detection devices, and can calculate the morphology characteristics of the substrate according to the data set. The measurement unit provided by the present invention includes a plurality of detection devices, the plurality of detection devices can synchronously obtain the morphology data set of the substrate, and the synchronous acquisition of data at multiple positions improves the measurement efficiency. In addition, the measurement unit of the present invention does not need to move the substrate during the measurement process, which saves the measurement time and further improves the measurement efficiency. It can also reduce the measurement error caused by the movement of the substrate in the optical detection of the traditional technology and improve the measurement accuracy.

[0025] In an optional scheme of the present invention, the detection device is a probe array, the resistance value of each probe in the probe array can change according to the unevenness of the wafer surface, and the resistance value of the probe array can form the data set; the probe array provided by the present invention is in direct contact with the wafer, so it can directly sense the unevenness changes on the wafer surface. Compared with the optical measurement method in the prior art, it can avoid measurement errors caused by light path refraction, dust shielding, etc., and improve measurement accuracy.

[0026] In an optional solution, the probe is a hydraulic telescopic probe, the length of which changes according to the unevenness of the wafer surface, and the length of the probe determines the resistance value of the probe; at the same time, the resistance value of the probe array changes instantaneously with the length of the hydraulic telescopic probe, with fast measurement speed and high efficiency.

[0027] In an optional scheme of the present invention, the probe array includes a central probe, a first probe group, a second probe group to an Nth probe group, the central probe corresponds to the center of the wafer surface, the first probe group, the second probe group to the Nth probe form a ring and are evenly arranged from the outside of the central probe, and each probe in the Nth probe group is evenly arranged at the edge position of the corresponding wafer surface; by evenly arranging the probes, the morphological data of the wafer surface can be evenly collected in a larger range, thereby improving the measurement accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of a type of substrate topography measurement device in the prior art;

[0029] Figure 2 is a schematic diagram of an embodiment of a substrate topography measuring device of the present invention;

[0030] Figure 3 yes Figure 2Schematic diagram of the probe;

[0031] Figure 4 is a schematic diagram of the position of the probe array and the wafer in one embodiment of the present invention;

[0032] Figure 5 is a schematic diagram of a measuring device according to an embodiment of the present invention used to measure the curvature of a wafer;

[0033] Figure 6 is a schematic diagram of another substrate topography measurement device of the present invention;

[0034] Figure 7 It is a schematic diagram of an embodiment of a topography measurement method of the present invention. DETAILED DESCRIPTION

[0035] The optical measurement method for measuring wafer morphology in the prior art is complex in structure and time-consuming. The present invention provides a wafer morphology measurement device and method, which reduces the measurement time, improves production efficiency, and improves measurement accuracy. The embodiments of the present invention are described below in conjunction with the accompanying drawings.

[0036] Please refer to Figure 2 , is a schematic diagram of a measuring device in one embodiment of the present invention. The wafer morphology measuring device in this embodiment includes:

[0037] The measuring unit 10 is used to measure the topography data of the substrate, and comprises a carrier 11 and a plurality of detection devices 12 located on the carrier. The detection devices 12 can detect the topography data of different positions of the substrate to form a data set.

[0038] A calculation unit 20 is electrically connected to the plurality of detection devices 12 and is capable of calculating the topographical features of the substrate according to the data set.

[0039] Since the substrate morphology measurement device provided by the present embodiment includes a measuring unit for measuring the morphology data of the substrate, the measuring unit includes a carrying device and a plurality of detection devices located on the carrying device, and the detection devices can detect the morphology data of different positions of the substrate to form a data set. The substrate morphology measurement device provided by the present embodiment also includes a calculation unit, and the calculation unit is electrically connected to the plurality of detection devices, and can calculate the morphology characteristics of the substrate according to the data set. The measurement unit provided by the present embodiment includes a plurality of detection devices, and the plurality of detection devices can synchronously obtain the morphology data set of the substrate, and the synchronous acquisition of data at multiple positions improves the measurement efficiency. In addition, the measurement unit of the present embodiment does not need to move the substrate during the measurement process, which saves the measurement time, further improves the measurement efficiency, and can also reduce the measurement error caused by the movement of the substrate in the optical detection of the traditional technology, and improves the measurement accuracy.

[0040] Specifically, the substrate is a wafer, the multiple detection devices 12 are a probe array, the electrical parameter value of each probe in the probe array can change according to the concavity and convexity of the wafer surface, and the electrical parameter value of the probe array can form the data set.

[0041] In this embodiment, the electrical parameter value is resistance, which is an easily detectable electrical parameter. In other embodiments, the electrical parameter may be other parameters, such as current, voltage, and inductance. This embodiment can be deeply integrated with the current semiconductor manufacturing process. The carrier device 11 in this embodiment can be a wafer support device (e.g., wafer chuck Chuck) in the semiconductor process, and can also be combined with a wafer handling device in the semiconductor process. The probe in this embodiment can be modified based on the pin needle on the traditional wafer handling device, which effectively saves the cost of production equipment.

[0042] Figure 3 for Figure 2 A schematic diagram of an embodiment of a measuring unit is shown in FIG. Figure 3 As shown, in this embodiment, the probe is a hydraulic telescopic probe 200, the length of which changes according to the concavity and convexity of the wafer surface, and the length of which determines the resistance value of the hydraulic telescopic probe 200. That is, the length of the probe 200 is related to the resistance value of the probe 200.

[0043] It should be noted that, in other embodiments, the probe may also be a piezoresistive sensor.

[0044] Specifically, the hydraulic telescopic probe 200 includes: a sleeve 202 and a telescopic probe 201 located in the sleeve 202, and an elastic deformation liquid (not shown) is provided between the telescopic probe 201 and the sleeve 202. According to the different concave and convex surfaces of the wafer, the elastic deformation liquid bears different pressures, and the length of the telescopic probe 201 of each hydraulic telescopic probe 200 is different, thereby determining the resistance value of the hydraulic telescopic probe 200.

[0045] In this embodiment, the hydraulic telescopic probe 200 is electrically connected to a power source 205 and an ammeter 204, and the resistance value of the hydraulic telescopic probe 200 can be obtained according to the voltage value of the power source 205 and the current value measured by the ammeter 204. However, the present invention does not limit the method for measuring the resistance value of the hydraulic telescopic probe 200.

[0046] In this embodiment, according to the change of the concavo-convexity of the wafer surface, the length of the hydraulic retractable probe 200 varies within the range of 1 micron to 100 microns, thereby providing a larger measurement range.

[0047] The probe array provided in this embodiment is in direct contact with the wafer, so it can directly sense the concave and convex changes on the wafer surface. Compared with the optical measurement method in the prior art, in addition to improving the measurement efficiency because the data is obtained synchronously, the resistance value of the probe array changes instantaneously with the length of the hydraulic telescopic probe 200, and the measurement speed is fast and the efficiency is high; in addition, it can also avoid the measurement errors caused by light path refraction, dust shielding, etc., and improve the measurement accuracy. In this embodiment, a contact end 203 is also provided on the telescopic probe 201, and the contact end 203 is hemispherical. The contact end 203 contacts the wafer during measurement, which is conducive to keeping the wafer surface intact. In addition, the contact end 203 can also be a rubber product, which can reduce the problem of scratching the wafer during contact. However, the present invention does not limit the shape and material of the contact end 203.

[0048] Figure 4 Schematic diagram of the probe array and wafer position in this embodiment. Figure 4 as well as Figure 5 , the measurement of wafer morphology using the measuring device of this embodiment is described.

[0049] Figure 4 FIG. 1 shows a carrier device 11, a plurality of hydraulic retractable probes 200 and a wafer 300 provided in this embodiment. In order to clearly show the positional relationship between the probe array and the wafer, the carrier device 11 is represented by a dotted line. Figure 4 As shown, in this embodiment, the plurality of probes 200 are evenly arranged on the carrier at positions corresponding to the shape of the wafer 300. By evenly arranging the probes, the topography data of the surface of the wafer 300 can be evenly collected in a larger range, thereby improving the measurement accuracy.

[0050] Specifically, the probe array includes a central probe 100, a first probe group 101, and a second probe group to an Nth probe group 103. The central probe 100 corresponds to the center of the wafer. The first probe group 101, the second probe group 102 to the Nth probe 103 form a circular ring, and are uniformly arranged from the center of the wafer to the edge of the wafer in sequence. The probes in each group of the first probe group 101, the second probe group to the Nth probe group 103 are uniformly arranged along the circumferential direction of the circular ring. The arrangement of the probe array in this embodiment can completely measure the morphological data of the wafer, but the present invention does not limit the arrangement of the probes.

[0051] Specifically, the first probe group 101 includes 8 probes arranged in a ring, the second probe group 102 includes 16 probes arranged in a ring, and the third probe group 103 includes 24 probes arranged in a ring. The number of probes set in this embodiment takes into account various points on the wafer, and the number is moderate, which avoids excessive redundancy of data in the data set and reduces the measurement time.

[0052] In other embodiments, the probe array may include a central probe, a first probe group, a second probe group to an Nth probe group, the central probe corresponds to the center of the wafer surface, the first probe group, the second probe group to the Nth probe form a ring and are uniformly arranged from the outside of the central probe in sequence, and each probe in the Nth probe group is uniformly arranged at the edge position of the corresponding wafer surface. After the measurement unit is used to measure the morphology of the wafer, the resistance value of the probe array can provide a data set through the calculation of the calculation unit, and the data set includes the surface center height h0 of the wafer provided by the central probe 100, and the first height average h1, the second height average h2 to the nth height average h3 provided by the first probe group 101, the second probe group 102 to the third probe group 103.

[0053] In other embodiments, the data set includes the surface center height h0 of the wafer provided by the central probe 100 , and the first height mean h1 , the second height mean h2 to the nth height mean hn provided by the first probe group 101 , the second probe group 102 to the Nth probe group.

[0054] Figure 5 Schematic diagram of the measuring device of this embodiment for measuring the curvature of a wafer. In this embodiment, the measuring device of this embodiment is used to calculate the curvature of a wafer, so the calculation unit 20 is used to calculate the curvature of the wafer. Figure 5 As shown, during measurement, the reference plane 301 is used as a reference to obtain the height data of each point of the wafer 300 .

[0055] The calculation unit 20 includes a calculation module 21 and a comparison module 22. The comparison module 22 compares the first height average h1, the second height average h2 to the nth height average hn and determines the maximum value thereof as the height peak hmax. The curvature of the wafer is Specifically, in this embodiment, the comparison module 22 compares the first height mean h1 and the second height mean h2 to the third height mean h3 and determines the maximum value therein as the height peak value hmax.

[0056] In this embodiment, the first height average h1, the second height average h2 to the third height average h3 can be obtained by using a plurality of data measured by the first probe group 101, the second probe group 102 to the third probe group 103 respectively, through a difference method, which is conducive to reducing the uncertainty of the data. However, the present invention does not limit the specific processing method of the measurement data.

[0057] In another embodiment provided by the present invention, the calculation unit is used to calculate the total thickness deviation of the wafer, and the calculation unit includes a comparison module, which compares the surface center height h0, the first height mean h1, the second height mean h2 to the nth height mean hn and determines the maximum value therein as the height peak hmax, and determines the minimum value therein as the height valley hmin, and the total thickness deviation of the wafer is TTV=hmax-hmin.

[0058] In another embodiment provided by the present invention, the calculation unit is used to calculate the warpage of the wafer, and the central probe, the first probe group, the second probe group to the Nth probe group can provide the maximum value h01 of the wafer surface height and the minimum value h02 of the wafer surface height, and the calculation unit calculates the warpage of the wafer as Warp=h02-h01.

[0059] Through experimental data testing, it is found that the embodiment of the present invention reduces the measurement time of a wafer by at least 1 / 3, thereby improving the measurement efficiency and further improving the production capacity of semiconductor manufacturing.

[0060] The above embodiments are described with the substrate being a wafer. In other embodiments, the substrate may also be glass. The existing optical measurement method cannot effectively monitor glass substrates with low reflectivity. This embodiment uses contact measurement, which can also detect glass substrates with low reflectivity. Figure 6 As shown,

[0061] Usually the glass 500 is square, and accordingly in the measuring device, a plurality of probe devices 501 form a probe matrix, and the electrical parameter value of each probe in the probe matrix can change according to the concavity and convexity of the glass surface, and the electrical parameter value of the probe matrix can form the data set.

[0062] Generally, the area of ​​a glass substrate is larger than that of a wafer. Using the measuring device of the present invention to detect a glass substrate can further improve the measurement efficiency. This embodiment also provides a substrate morphology measurement method, using the measuring device of this embodiment to measure the morphology of the substrate surface. The measurement method includes:

[0063] placing a substrate on the carrier;

[0064] The detection device detects the topography data of different positions of the substrate to form a data set;

[0065] The computing unit calculates the topographical features of the substrate according to the data set.

[0066] The measuring device of this embodiment is used to measure the morphology of the wafer surface. Since a contact-type detection device can be used for detection, the detection efficiency is relatively high. When the detection device includes multiple probes, data sets at different positions can be obtained synchronously. Therefore, the measurement method of the present invention has a high measurement efficiency.

[0067] In one embodiment of the present invention, the substrate is a wafer, and the measuring step includes: measuring the morphology of the surface of the wafer during the wafer transportation process of the semiconductor manufacturing process.

[0068] Using the measuring device of this embodiment, there are many ways to measure the wafer morphology, and the present invention does not limit this.

[0069] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A substrate topography measuring device, characterized in that: include: A measuring unit, used for measuring the topography data of the substrate, comprising a carrying device and a plurality of detection devices located on the carrying device, wherein the detection devices can detect the topography data of different positions of the substrate to form a data set; A calculation unit is electrically connected to the plurality of detection devices and is capable of calculating the topographical features of the substrate according to the data set.

2. The device according to claim 1, characterized in that The substrate is a wafer, the multiple detection devices are a probe array, the electrical parameter value of each probe in the probe array can change according to the concavity and convexity of the wafer surface, and the electrical parameter value of the probe array can form the data set.

3. The device according to claim 2, characterized in that The electrical parameter value is a resistance value.

4. The device according to claim 3, characterized in that The probe is a hydraulic retractable probe, the length of which changes according to the concavity and convexity of the wafer surface, and the length of the probe is related to the resistance value of the probe.

5. The device according to claim 3, characterized in that The plurality of probes are evenly arranged on the carrier at positions corresponding to the shape of the wafer.

6. The device according to claim 5, characterized in that The probe array includes a central probe, a first probe group, and a second probe group to an Nth probe group. The central probe corresponds to the center of the wafer. The first probe group, the second probe group to the Nth probe form a circular ring and are evenly arranged from the center of the wafer to the edge of the wafer. Each group of probes in the first probe group, the second probe group to the Nth probe is evenly arranged along the circumferential direction of the ring.

7. The device according to claim 6, characterized in that The plurality of probes include a central probe, a first probe group, a second probe group and a third probe group, wherein the first probe group includes 8 probes arranged in a ring shape, the second probe group includes 16 probes arranged in a ring shape, and the third probe group includes 24 probes arranged in a ring shape.

8. The device according to claim 6, characterized in that The data set provided by the probe array includes the surface center height h0 of the wafer provided by the central probe, and the first height mean h1, the second height mean h2 to the nth height mean hn provided by the first probe group, the second probe group to the Nth probe group.

9. The device according to claim 8, characterized in that The calculation unit is used to calculate the curvature of the wafer. The calculation unit includes a comparison module. The comparison module compares the first height average h1, the second height average h2 to the nth height average hn and determines the maximum value thereof as the height peak hmax. The curvature of the wafer is 10. The device according to claim 8, characterized in that The calculation unit is used to calculate the total thickness deviation of the wafer. The calculation unit includes a comparison module. The comparison module compares the surface center height h0, the first height mean h1, the second height mean h2 to the nth height mean hn and determines the maximum value therein as the height peak hmax, and the minimum value therein as the height valley hmin. The total thickness deviation of the wafer is TTV=hmax-hmin.

11. The device according to claim 6, characterized in that The calculation unit is used to calculate the warpage of the wafer. The central probe, the first probe group, the second probe group to the Nth probe group can provide a maximum value h01 of the wafer surface height and a minimum value h02 of the wafer surface height. The calculation unit calculates the warpage of the wafer as Warp=h02-h01.

12. The device according to claim 4, characterized in that The hydraulic telescopic probe comprises a sleeve and a telescopic probe located in the sleeve, and an elastic deformation liquid is provided between the telescopic probe and the sleeve.

13. The device according to claim 3, characterized in that The probe is a piezoresistive sensor.

14. The device according to claim 1, characterized in that The substrate is glass, the multiple detection devices form a probe matrix, the electrical parameter value of each probe in the probe matrix can change according to the concavity and convexity of the glass surface, and the electrical parameter values ​​of the probe matrix can form the data set.

15. A method for measuring substrate morphology, characterized in that: Using any one of the measuring devices as claimed in claims 1 to 14, measuring the topography of the substrate surface; The substrate topography measurement method comprises: placing a substrate on the carrier; The detection device detects the topography data of different positions of the substrate to form a data set; The calculation unit calculates the topographical features of the substrate according to the data set.

16. The method according to claim 15, characterized in that The substrate is a wafer, and the step of measuring the morphology of the wafer surface includes: measuring the morphology of the wafer surface during the wafer transportation process of the semiconductor process.

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