Topcon solar cell and manufacturing method thereof

By using a silicon aluminum gallium passivation film layer in Topcon solar cells, the problem of insufficient negative charge density caused by the interfacial atomic diffusion after high-temperature annealing of the traditional alumina film layer is solved, and a higher open circuit voltage and photoelectric conversion efficiency are achieved.

CN119677235APending Publication Date: 2025-03-21JA SOLAR TECH YANGZHOU
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Patent Information

Application Number
CN202411628397.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-14
Publication Date
2025-03-21

AI Technical Summary

Technical Problem

The photoelectric conversion efficiency of existing Topcon solar cells is not high, mainly due to the insufficient negative charge density caused by the interfacial atomic diffusion of the alumina film layer after high temperature annealing, which affects the passivation effect.

Method used

The silicon-oxide aluminum gallium passivation film layer is used to replace the traditional alumina passivation film layer. By regulating the molar content ratio of silica, aluminum and gallium and gas flow ratio, the chemical composition and structure of the film layer are optimized and the negative charge density of the film layer is improved.

Benefits of technology

The open circuit voltage and photoelectric conversion efficiency of Topcon solar cells are improved, the passivation effect on the surface of the silicon wafer is enhanced, and the stress of the film layer is regulated through gradient design, further improving the battery performance.

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Abstract

The invention relates to a Topcon solar cell and a manufacturing method thereof, belongs to the technical field of solar cells, and solves the problem of low photoelectric conversion efficiency of a Topcon cell in the prior art. The device comprises a silicon wafer, the silicon wafer comprises a front surface and a back surface, the front surface is a boron-diffused silicon wafer surface, and a silicon-aluminum-gallium oxide passivation film layer, a front surface passivation dielectric layer and a first conductive electrode are sequentially arranged from the front surface to the outside; a tunneling oxide layer, a phosphorus-doped silicon layer, a reverse passivation dielectric layer and a second conductive electrode are sequentially arranged from the reverse side to the outside; the chemical composition of the silicon-aluminum-gallium oxide passivation film layer is composed of oxides of silicon, aluminum and gallium, and the molar content ratio of silicon to aluminum to gallium is adjustable. The silicon-aluminum-gallium oxide passivation film layer is adopted to replace an existing aluminum oxide passivation film layer, so that the negative charge density is high, the surface passivation of the silicon wafer is good, and the photoelectric conversion efficiency is improved.
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