Organic compound, light-emitting device, light-emitting device, and electronic apparatus

Abstract

Provided is an organic compound having electron-transporting properties and low solubility in water. A light emitting device, a light emitting apparatus, and an electronic apparatus are provided. Provided is an organic compound represented by general formula (G1-1). At least any one of R2 to R9 is a group represented by general formula (R-1) or (R-2); other independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. [alpha] 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, R11 to R26 each independently represent hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and p and q each independently represent 0 or 1. # imgabs0 #

Description

Technical Field

[0001] One embodiment of the present invention relates to an organic compound, a light-emitting device, a light-emitting apparatus, a light-receiving apparatus, a display device, an electronic device, a lighting device, and an electronic device. Note that one embodiment of the present invention is not limited to the above-mentioned technical field. The technical field of one embodiment of the invention disclosed in this specification, etc., relates to an object, a method, or a manufacturing method. In addition, one embodiment of the present invention relates to a process, a machine, a product, or a composition of matter. Therefore, specifically, as examples of the technical field of one embodiment of the present invention disclosed in this specification, semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, camera devices, driving methods of these devices, or manufacturing methods of these devices can be cited. Background Art

[0002] In recent years, display devices are expected to be used in various applications. For example, large display devices can be used in home television devices (also called televisions or television receivers), digital signage, and public information displays (PID). In addition, as portable information terminals, research and development of smartphones and tablet terminals equipped with touch panels is underway.

[0003] In addition, there is a demand for higher-definition display devices. As devices requiring high-definition display devices, for example, devices for virtual reality (VR), augmented reality (AR), alternative reality (SR), and mixed reality (MR) are being actively developed.

[0004] As a display device, for example, a light-emitting device including a light-emitting device (also referred to as a light-emitting element) has been developed. A light-emitting device (also referred to as an EL device or an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon has the following characteristics: it is easy to achieve thinness and lightness; it can respond to input signals at high speed; and it can be driven using a DC constant voltage power supply; etc., and has been applied to display devices.

[0005] Patent document 1 discloses a display device for VR using an organic EL device (also referred to as an organic EL element). Patent document 2 discloses a light-emitting device having a low driving voltage and good reliability, using a mixed film of an organic compound containing a transition metal and a non-shared electron pair as an electron injection layer.

[0006] [Patent Document 1] International Patent Application Publication No. 2018 / 087625 [Patent Document 2] Japanese Patent Application Publication No. 2018-201012 Summary of the invention

[0007] As one of the methods for manufacturing an organic compound layer into a predetermined shape, a vacuum evaporation method (mask evaporation) using a metal mask is widely used. However, with the recent progress in high density and high definition, due to various reasons represented by problems in position alignment accuracy and problems in the configuration interval with the substrate, further high definition of mask evaporation is approaching the limit. On the other hand, by processing the shape of the organic compound layer using lithography technology, a denser pattern can be formed. In addition, since the above method is easy to achieve large area, research on the processing of organic compound layers using lithography technology has been conducted.

[0008] When an organic compound layer is processed by lithography, if the organic compound used in the organic compound layer has high solubility in water, the organic compound layer may dissolve in the process of being exposed to water or a chemical solution using water as a solvent, which may lead to degradation of characteristics, poor shape, etc. In addition, when the glass transition temperature (T g ) is low, the organic compound layer may crystallize and the film quality may deteriorate in the heating step for removing water adsorbed on the organic compound layer after the step of exposing the organic compound layer to water or a chemical solution containing water as a solvent.

[0009] An object of one embodiment of the present invention is to provide an organic compound having electron transport properties. Another object of one embodiment of the present invention is to provide an organic compound having low solubility in water. Another object of one embodiment of the present invention is to provide a T g An organic compound with high conductivity. Another object of one embodiment of the present invention is to provide a light-emitting device having good characteristics. Another object of one embodiment of the present invention is to provide a novel organic compound or a novel light-emitting device.

[0010] In addition, one of the purposes of one embodiment of the present invention is to provide a light-emitting device with high display quality. In addition, one of the purposes of one embodiment of the present invention is to provide a high-definition light-emitting device. In addition, one of the purposes of one embodiment of the present invention is to provide a high-resolution light-emitting device. In addition, one of the purposes of one embodiment of the present invention is to provide a light-emitting device with a high aperture ratio. In addition, one of the purposes of one embodiment of the present invention is to provide a light-emitting device with high reliability. In addition, one of the purposes of one embodiment of the present invention is to provide a novel light-emitting device with excellent convenience, practicality or reliability. In addition, one of the purposes of one embodiment of the present invention is to provide a novel electronic device with excellent convenience, practicality or reliability. In addition, one of the purposes of one embodiment of the present invention is to provide a novel lighting device with excellent convenience, practicality or reliability. In addition, one of the purposes of one embodiment of the present invention is to provide a novel light-emitting device, a novel electronic device or a novel lighting device.

[0011] Note that the description of these purposes does not prevent the existence of other purposes. Note that one embodiment of the present invention does not necessarily achieve all of the above purposes. Note that purposes other than the above can be known and extracted from the description of the specification, drawings, claims, etc.

[0012] One embodiment of the present invention is an organic compound represented by General Formula (G1-1).

[0013] [Chemical formula 1]

[0014] In the general formula (G1-1), R 2 To R 9 At least one of them is a group represented by the general formula (R-1) or (R-2), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formulas (R-1) and (R-2), α 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same as or different from each other, and R 11 To R 26 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and p and q each independently represent 0 or 1. Note that R 11 To R 18 Any two of R can be bonded to each other to form a ring, 19 To R26 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by the general formula (R-1) or (R-2), they may be the same as or different from each other.

[0015] In the organic compound with the above structure, R 4 and R 7 It is more preferable that either or both of are groups represented by the general formula (R-1) or (R-2).

[0016] Another embodiment of the present invention is an organic compound represented by General Formula (G1-2).

[0017] [Chemical formula 2]

[0018] In the general formula (G1-2), R 2 To R 9 At least one of them is a group represented by any one of the general formulae (R-1) to (R-4), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formulae (R-1) to (R-4), α 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same as or different from each other, and R 11 To R 46 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, and t represents 0 or 1. Note that R 11 To R 18 Any two of R can be bonded to each other to form a ring, 19 To R 26 Any two of R can be bonded to each other to form a ring, 27 To R 36 Any two of R can be bonded to each other to form a ring, 37 To R 46 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by any of the general formulae (R-1) to (R-4), they may be the same as or different from each other.

[0019] In the organic compound with the above structure, R 4 and R 7 More preferably, one or both of are a group represented by any one of the general formulae (R-1) to (R-4).

[0020] Another embodiment of the present invention is an organic compound represented by General Formula (G1-3).

[0021] [Chemical formula 3]

[0022] In the general formula (G1-3), R 2 To R 9 At least one of them is a group represented by any one of the general formulae (R-5) to (R-8), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formulae (R-5) to (R-8), R 51 To R 54 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 46 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, and t represents 0 or 1. Note that R 11 To R 18 Any two of R can be bonded to each other to form a ring, 19 To R 26 Any two of R can be bonded to each other to form a ring, 27 To R 36 Any two of R can be bonded to each other to form a ring, 37 To R 46 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by any of the general formulae (R-5) to (R-8), they may be the same as or different from each other.

[0023] In the organic compound with the above structure, R 4 and R7 More preferably, one or both of are a group represented by any of the general formulae (R-5) to (R-8).

[0024] Another embodiment of the present invention is an organic compound represented by General Formula (G1-4).

[0025] [Chemical formula 4]

[0026] In the general formula (G1-4), R 2 To R 9 At least one of them is a group represented by any one of the general formulae (R-9) to (R-12), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formulae (R-9) to (R-12), R 51 To R 54 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 46 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, and t represents 0 or 1. Note that R 11 To R 18 Any two of R can be bonded to each other to form a ring, 19 To R 26 Any two of R can be bonded to each other to form a ring, 27 To R 36 Any two of R can be bonded to each other to form a ring, 37 To R 46 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by any of the general formulae (R-9) to (R-12), they may be the same as or different from each other.

[0027] In the organic compound with the above structure, R 4 and R 7More preferably, one or both of are a group represented by any of the general formulae (R-5) to (R-8).

[0028] Another embodiment of the present invention is an organic compound represented by General Formula (G2).

[0029] [Chemical formula 5]

[0030] In the general formula (G2), R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 To R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 18 and R 61 To R 68 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms; and p, q, r and s each independently represent 0 or 1.

[0031] Another embodiment of the present invention is an organic compound represented by General Formula (G3).

[0032] [Chemical formula 6]

[0033] In the general formula (G3), R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 To R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 18 and R 61 To R 68Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms; and p, q, r and s each independently represent 0 or 1.

[0034] Another embodiment of the present invention is an organic compound represented by General Formula (G4).

[0035] [Chemical formula 7]

[0036] In the general formula (G4), R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 To R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 18 and R 61 To R 68 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms.

[0037] In addition, one embodiment of the present invention is an organic compound of each of the above structures, wherein the group bonded to the 4-position of the phenanthroline ring and the group bonded to the 7-position thereof are the same.

[0038] Another embodiment of the present invention is an organic compound represented by Structural Formula (100) or Structural Formula (152).

[0039] [Chemical formula 8]

[0040] Another embodiment of the present invention is a light-emitting device using the organic compound having each of the above structures.

[0041] In addition, one embodiment of the present invention is a light-emitting device, which includes a first electrode, a second electrode and an organic compound layer, the organic compound layer is located between the first electrode and the second electrode, the organic compound layer includes a light-emitting layer and an electron injection layer, the electron injection layer is located between the light-emitting layer and the second electrode, and the electron injection layer contains organic compounds of the above-mentioned structures.

[0042] In addition, one embodiment of the present invention is a light-emitting device, which includes a first electrode, a second electrode and an organic compound layer, the organic compound layer is located between the first electrode and the second electrode, the organic compound layer includes an intermediate layer, a first light-emitting layer and a second light-emitting layer, the intermediate layer is located between the first light-emitting layer and the second light-emitting layer, and the intermediate layer contains organic compounds of the above-mentioned structures.

[0043] Another embodiment of the present invention is a light-emitting device including the light-emitting device having the above structure and a transistor or a substrate.

[0044] Another embodiment of the present invention is an electronic device including the light emitting device having the above-described structure and a detection unit, an input unit, or a communication unit.

[0045] Note that in this specification, a light-emitting device includes a display device or an image display device using a light-emitting device. In addition, a light-emitting device sometimes includes a module in which a light-emitting device on a substrate is mounted with a connector such as an anisotropic conductive film or TCP (Tape Carrier Package); a module in which a printed circuit board is provided at the end of the TCP; or a module in which an IC (integrated circuit) is directly mounted on the light-emitting device by COG (Chip On Glass). Furthermore, lighting equipment and the like sometimes include a light-emitting device.

[0046] According to one embodiment of the present invention, an organic compound having electron transport properties can be provided. In addition, according to one embodiment of the present invention, an organic compound having low solubility in water can be provided. In addition, according to one embodiment of the present invention, a T g According to one embodiment of the present invention, a light-emitting device having good characteristics can be provided. According to one embodiment of the present invention, a novel organic compound or a novel light-emitting device can be provided.

[0047] According to one embodiment of the present invention, a light-emitting device with high display quality can be provided. In addition, according to one embodiment of the present invention, a high-definition light-emitting device can be provided. In addition, according to one embodiment of the present invention, a high-resolution light-emitting device can be provided. In addition, according to one embodiment of the present invention, a light-emitting device with a high aperture ratio can be provided. In addition, according to one embodiment of the present invention, a light-emitting device with high reliability can be provided. In addition, according to one embodiment of the present invention, a novel light-emitting device with excellent convenience, usefulness or reliability can be provided. In addition, according to one embodiment of the present invention, a novel display module with excellent convenience, usefulness or reliability can be provided. In addition, according to one embodiment of the present invention, a novel electronic device with excellent convenience, usefulness or reliability can be provided. In addition, according to one embodiment of the present invention, a novel light-emitting device, a novel display module, a novel electronic device or a novel semiconductor device can be provided.

[0048] Note that the description of these effects does not prevent the existence of other effects. One embodiment of the present invention does not necessarily have all of the above effects. Effects other than the above effects can be extracted from the description of the specification, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figure 1A and Figure 1B is a diagram showing a light emitting device; FIG. 2A to FIG. 2D is a diagram showing a light emitting device; Figure 3A and Figure 3B is a top view and a cross-sectional view of the light emitting device; 4A to 4D is a diagram showing a light emitting device; Figures 5A to 5E is a cross-sectional view showing an example of a method for manufacturing a display device; FIG. 6A to FIG. 6D is a cross-sectional view showing an example of a method for manufacturing a display device; FIG. 7A to FIG. 7D is a cross-sectional view showing an example of a method for manufacturing a display device; FIG. 8A to FIG. 8C is a cross-sectional view showing an example of a method for manufacturing a display device; 9A to 9C is a cross-sectional view showing an example of a method for manufacturing a display device; FIG. 10A to FIG. 10C is a cross-sectional view showing an example of a method for manufacturing a display device; Fig.11A and Fig. 11B is a perspective view showing a structural example of a display module; Fig. 12Aand Fig. 12B is a cross-sectional view showing a structural example of a display device; FIG. 13A to FIG. 13D is a diagram showing an example of an electronic device; FIG. 14A to FIG. 14F is a diagram showing an example of an electronic device; Fig.15 Shows PrdP2Phen 1 H NMR spectrum; Fig.16 is a diagram showing the brightness-current density characteristics of the light emitting device 1 and the comparative light emitting device 2; Fig.17 is a diagram showing the brightness-voltage characteristics of the light emitting device 1 and the comparative light emitting device 2; Fig.18 is a graph showing current efficiency-current density characteristics of the light emitting device 1 and the comparative light emitting device 2; Fig.19 is a graph showing current density-voltage characteristics of the light emitting device 1 and the comparative light emitting device 2; Fig. 20 is a diagram showing electroluminescence spectra of the light emitting device 1 and the comparative light emitting device 2; Fig.21 is a diagram showing the brightness-current density characteristics of the light emitting device 3 and the light emitting device 4; Fig. 22 is a diagram showing the brightness-voltage characteristics of the light emitting device 3 and the light emitting device 4; Fig.23 is a diagram showing current efficiency-current density characteristics of the light emitting device 3 and the light emitting device 4; Fig.24 is a diagram showing current density-voltage characteristics of the light emitting device 3 and the light emitting device 4; Fig.25 is a diagram showing electroluminescence spectra of light emitting device 3 and light emitting device 4; FIG. 26A to FIG. 26C are optical microscope photographs of light emitting device 3, light emitting device 4 and comparative light emitting device 5; Fig. 27 It's Hid-PrdPPhen 1 H NMR spectrum; Fig.28 is a diagram showing the brightness-current density characteristics of the light emitting device 6 and the light emitting device 7; Fig.29 is a diagram showing the brightness-voltage characteristics of the light emitting device 6 and the light emitting device 7; Fig.30 is a diagram showing current efficiency-current density characteristics of the light emitting device 6 and the light emitting device 7; Fig.31 is a diagram showing current density-voltage characteristics of the light emitting device 6 and the light emitting device 7; Fig.32 is a diagram showing electroluminescence spectra of light emitting device 6 and light emitting device 7; Fig.33 is a diagram showing the brightness-current density characteristics of the light emitting device 8 and the comparative light emitting device 9; Fig.34 is a diagram showing the brightness-voltage characteristics of the light emitting device 8 and the comparative light emitting device 9; Fig.35 is a graph showing current efficiency-current density characteristics of the light emitting device 8 and the comparative light emitting device 9; Fig.36 is a diagram showing current density-voltage characteristics of the light emitting device 8 and the comparative light emitting device 9; Fig.37 is a diagram showing electroluminescence spectra of the light emitting device 8 and the comparative light emitting device 9; Fig.38A and Fig.38B These are optical microscope photographs of the light-emitting device 8 and the comparative light-emitting device 9. DETAILED DESCRIPTION

[0050] The embodiments are described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and a person skilled in the art can easily understand that the method and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below.

[0051] Note that in the structure of the invention described below, the same reference numerals are used in common between different drawings to represent the same parts or parts with the same function, and their repeated descriptions are omitted. In addition, when representing parts with the same function, the same hatching is sometimes used without adding a reference numeral in particular.

[0052] In addition, for ease of understanding, the positions, sizes, and ranges of various components shown in the drawings may not represent their actual positions, sizes, and ranges. Therefore, the disclosed invention is not necessarily limited to the positions, sizes, and ranges disclosed in the drawings.

[0053] In addition, depending on the situation or state, the "film" and the "layer" may be interchanged. For example, the "conductive layer" may be replaced with the "conductive film". Also, for example, the "insulating film" may be replaced with the "insulating layer".

[0054] Note that in this specification, etc., a device manufactured using a metal mask or FMM (Fine Metal Mask) is sometimes referred to as a device having an MM (Metal Mask) structure. In addition, in this specification, etc., a device manufactured without using a metal mask or FMM is sometimes referred to as a device having an MML (Metal Mask Less) structure.

[0055] In this specification, holes or electrons are sometimes referred to as "carriers". Specifically, a hole injection layer or an electron injection layer is sometimes referred to as a "carrier injection layer", a hole transport layer or an electron transport layer is sometimes referred to as a "carrier transport layer", and a hole blocking layer or an electron blocking layer is sometimes referred to as a "carrier blocking layer". In addition, sometimes one layer has the functions of two or three of a carrier injection layer, a carrier transport layer, and a carrier blocking layer.

[0056] In this specification, a light-emitting device (also referred to as a light-emitting element) includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer. In this specification, one of a pair of electrodes is sometimes referred to as a pixel electrode and the other as a common electrode.

[0057] In this specification, etc., a tapered shape refers to a shape in which at least a portion of the side surface of a constituent element is disposed obliquely relative to the substrate surface. For example, it is preferred that the angle formed by the inclined side surface and the substrate surface (also referred to as a taper angle) is less than 90°. Note that the side surface and the substrate surface of the constituent element do not necessarily have to be completely flat, and may be a substantially planar shape with a slight curvature or a substantially planar shape with fine concave-convex shapes.

[0058] Note that in this specification, a light-emitting device includes a display device or an image display device using an organic EL device. In addition, a light-emitting device sometimes includes a module in which an organic EL device is equipped with a connector such as an anisotropic conductive film or TCP (Tape Carrier Package); a module in which a printed circuit board is provided at the end of the TCP; or a module in which an IC (integrated circuit) is directly mounted on the organic EL device by a COG (Chip On Glass) method. Furthermore, a lighting device or the like sometimes includes a light-emitting device.

[0059] Implementation Method 1 In this embodiment, an organic compound which is one embodiment of the present invention is described.

[0060] The organic compound according to one embodiment of the present invention is an organic compound represented by General Formula (G1-1).

[0061] [Chemical formula 9]

[0062] In the general formula (G1-1), R 2 To R 9 At least one of them is a group represented by the general formula (R-1) or (R-2), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formulas (R-1) and (R-2), α 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same as or different from each other, and R 11 To R 26 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and p and q each independently represent 0 or 1. Note that R 11 To R 18 Any two of R can be bonded to each other to form a ring, 19 To R 26 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by the general formula (R-1) or (R-2), they may be the same as or different from each other.

[0063] The organic compound represented by the general formula (G1-1) has electron transport because it has 1,10-phenanthroline ring. In addition, 1,10-phenanthroline ring has non-shared electron pairs because the nitrogen atoms (N) at positions 1 and 10 have non-shared electron pairs, so it can be coordinated to the metal. Therefore, in the case where the organic compound represented by the general formula (G1-1) is mixed with a metal, a coordination bond is formed by supplying electrons from two N in 1,10-phenanthroline rings to the metal, so a stabilized complex can be formed and the electron density of the metal is increased. In addition, in the case where a layer of an organic compound represented by the general formula (G1-1) is stacked with a metal layer such as an electrode, a coordination bond is formed by supplying electrons from two N in 1,10-phenanthroline rings to the metal contained in the metal layer, so the electron density of the metal contained in the metal layer can be increased.

[0064] In addition, the organic compound represented by the general formula (G1-1) has a cyclic alkylamino group having a ring number of 3 or more and 5 or less. The cyclic alkylamino group has a high electron supply property, so the electron density of the 1,10-phenanthroline ring can be increased, and the electron supply property of the two N of the 1,10-phenanthroline ring to the metal is improved, and a stable coordination bond can be formed. Note that when the ring number of the cyclic alkylamino group is 5 or less, the electron density of the nitrogen atom contained in the cyclic alkylamino group is increased compared to the case where the ring number is 6 or more, thereby improving the electron supply property, so it is preferred.

[0065] In addition, due to the electron density of 1,10-phenanthroline ring is improved and acidity coefficient pKa becomes high. When acidity coefficient pKa is too high, solubility to water becomes high, but the organic compound represented by general formula (G1-1) has 1,10-phenanthroline ring and cyclic alkylamino by substituted or unsubstituted carbon number is the structure of arylene group connection of 6 to 30. Therefore, compared with the situation with the structure that 1,10-phenanthroline ring is directly connected to cyclic alkylamino, the electron supply property of cyclic alkylamino to 1,10-phenanthroline ring becomes low, and thus the electron density of 1,10-phenanthroline ring can be suppressed to be too high. Therefore, acidity coefficient pKa can be prevented from being too high and suppressing solubility to water becomes high. In addition, compared with the organic compound with the structure that 1,10-phenanthroline ring is directly connected to cyclic alkylamino, the molecular weight of the organic compound represented by general formula (G1-1) is large, and the volume ratio of cyclic alkylamino as hydrophilic group is small relative to whole molecular structure. This can also be said to suppress the solubility in water from becoming high. In addition, by having a substituted or unsubstituted arylene group having 6 to 30 carbon atoms as a hydrophobic group, the molecular weight increases, so that T can be obtained. g Higher organic compounds are therefore preferred.

[0066] Since the organic compound of one embodiment of the present invention has lower solubility in water, dissolution of the organic compound layer can be suppressed by using the organic compound layer of a light-emitting device (i.e., a light-emitting device processed by lithography) in a manufacturing process including treatment with water or a solution using water as a solvent. g Since the organic compound layer has a high molecular weight, the organic compound layer can be used to suppress crystallization in the heating step for removing water adsorbed on the organic compound layer after being exposed to water or a chemical solution containing water as a solvent. Therefore, by using the organic compound of one embodiment of the present invention, a light-emitting device with excellent characteristics and suppressed poor light emission can be manufactured.

[0067] Note that in this specification, hydrogen includes protium and deuterium. Deuterium refers to a stable isotope of hydrogen with a mass number of 2. Protium refers to a stable isotope of hydrogen with a mass number of 1. The bond between carbon and deuterium has a bond dissociation energy greater than that between carbon and protium, and is very stable and not easily broken. Therefore, when the organic compound of one embodiment of the present invention contains deuterium, the dissociation of the carbon-hydrogen bond can be suppressed to achieve a stable compound.

[0068] In addition, the organic compound according to one embodiment of the present invention is an organic compound represented by General Formula (G1-2).

[0069] [Chemical formula 10]

[0070] In the general formula (G1-2), R 2 To R 9 At least one of them is a group represented by any one of the general formulae (R-1) to (R-4), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formulae (R-1) to (R-4), α 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same as or different from each other, and R 11 To R 46 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, and t represents 0 or 1. Note that R 11 To R 18 Any two of R can be bonded to each other to form a ring, 19 To R 26 Any two of R can be bonded to each other to form a ring, 27 To R 36 Any two of R can be bonded to each other to form a ring, 37 To R 46 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by any of the general formulae (R-1) to (R-4), they may be the same as or different from each other.

[0071] In the general formula (G1-2), R in the general formula (R-1) of the general formula (G1-1) is 11 To R18 Examples of any two of the above are bonded to form a ring, as shown in the general formula (R-3) and (R-4). By forming a ring as described above, it is possible to achieve lower solubility in water and T compared to a monocyclic cyclic alkylamino group. g Higher organic compounds are therefore preferred.

[0072] In addition, the organic compound according to one embodiment of the present invention is an organic compound represented by General Formula (G1-3).

[0073] [Chemical formula 11]

[0074] In the general formula (G1-3), R 2 To R 9 At least one of them is a group represented by any one of the general formulae (R-5) to (R-8), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formulae (R-5) to (R-8), R 51 To R 54 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 46 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, and t represents 0 or 1. Note that R 11 To R 18 Any two of R can be bonded to each other to form a ring, 19 To R 26 Any two of R can be bonded to each other to form a ring, 27 To R 36 Any two of R can be bonded to each other to form a ring, 37 To R 46 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by any of the general formulae (R-5) to (R-8), they may be the same as or different from each other.

[0075] The organic compound represented by the general formula (G1-3) is different from the organic compound represented by the general formula (G1-2) in that: in the general formula (G1-3), α 1 As shown above, by using α 1 By using phenylene, it is possible to suppress the 1 The increase degree of effective conjugation length caused by it can suppress the absorption of light in the visible light region. In addition, when the substitution position of phenylene is para, the electron supply property of the nitrogen of phenanthroline ring from the cyclic alkylamino group is improved, so it is preferred. Therefore, by using an organic compound represented by the general formula (G1-3), the luminous efficiency of the light emitting device can be improved. In addition, it can be considered that the heat resistance is lower when the substitution position of phenylene is meta compared with the case of para. In addition, compared with the case of ortho or para, the cyclic alkylamino group has a lower electron supply property when meta, so the substitution position of phenylene is preferably para. In addition, it can be considered that when the substitution position of phenylene is ortho, the cyclic alkylamino group covers 1,10-phenanthroline ring, so it can be considered that the coordination bond between the nitrogen of 1,10-phenanthroline ring and the metal may be hindered. The spatial problem shown above can be solved when the substitution position of phenylene is para, so it is preferred.

[0076] In addition, the organic compound according to one embodiment of the present invention is an organic compound represented by General Formula (G1-4).

[0077] [Chemical formula 12]

[0078] In the general formula (G1-4), R 2 To R 9 At least one of them is a group represented by any one of the general formulae (R-9) to (R-12), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formulae (R-9) to (R-12), R 51 To R 54 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 46Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, and t represents 0 or 1. Note that R 11 To R 18 Any two of R can be bonded to each other to form a ring, 19 To R 26 Any two of R can be bonded to each other to form a ring, 27 To R 36 Any two of R can be bonded to each other to form a ring, 37 To R 46 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by any of the general formulae (R-9) to (R-12), they may be the same as or different from each other.

[0079] The organic compound represented by the general formula (G1-4) is different from the organic compound represented by the general formula (G1-3) in that the substitution position of the phenylene group connecting the 1,10-phenanthroline ring and the cyclic alkylamino group in the general formula (G1-4) is limited to the para position. As described above, by adopting the para-phenylene group, the para-phenylene group is arranged on the same plane without twisting relative to the 1,10-phenanthroline ring. Therefore, the effect of the cyclic alkylamino group on increasing the electron density of the 1,10-phenanthroline ring is not easily reduced, so it is preferred.

[0080] In the organic compound represented by the general formula (G1-1), R 4 and R 7 Any one of them is preferably a group represented by the general formula (R-1) or (R-2), R 4 and R 7 Both of them are more preferably groups represented by the general formula (R-1) or (R-2). 4 and R 7 Any one of the above is preferably a group represented by any one of the general formulae (R-1) to (R-4), R 4 and R 7 Both of are more preferably groups represented by any one of the general formulae (R-1) to (R-4). 4 and R 7 Any one of the above is preferably a group represented by any one of the general formulae (R-5) to (R-8), R 4 and R 7 Both of are more preferably groups represented by any one of the general formulae (R-5) to (R-8). 4 and R7 Any one of the above is preferably a group represented by any one of the general formulae (R-9) to (R-12), R 4 and R 7 Both sides are more preferably a group represented by any one of the general formulas (R-9) to (R-12). As described above, by introducing a group having electron donating properties at the 4-position and the 7-position of the 1,10-phenanthroline ring, the electron density of the nitrogen atoms at the 1-position and the 10-position of the 1,10-phenanthroline ring can be increased. In addition, the steric hindrance around the nitrogen atoms at the 1-position and the 10-position can be avoided, and the electron density around can be increased. Therefore, the efficiency of the interaction between the organic compound represented by the general formula (G1-1) to (G1-4) and the metal can be improved.

[0081] Another embodiment of the present invention is an organic compound represented by the general formula (G2).

[0082] [Chemical formula 13]

[0083] In the general formula (G2), R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 To R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 18 and R 61 To R 68 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms; and p, q, r and s each independently represent 0 or 1.

[0084] The organic compound represented by the general formula (G2) is different from the general formula (G1-3) in that R 4 and R 7 Both of R and R are limited to the groups represented by the general formula (R-5). 4 and R 7When both sides are groups represented by the general formula (R-5), the electron density of the nitrogen atoms at positions 1 and 10 of the phenanthroline ring can be increased. In addition, the steric hindrance around the nitrogen atoms at positions 1 and 10 can be avoided, and the electron density around them can be increased. Therefore, the efficiency of the interaction between the organic compound represented by the general formula (G2) and the metal can be improved.

[0085] Another embodiment of the present invention is an organic compound represented by the general formula (G3).

[0086] [Chemical formula 14]

[0087] In the general formula (G3), R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 To R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 18 and R 61 To R 68 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms; and p, q, r and s each independently represent 0 or 1.

[0088] The organic compound represented by the general formula (G3) is different from the organic compound represented by the general formula (G2) in that the substitution position of the phenylene group connecting the 1,10-phenanthroline ring and the cyclic alkylamino group in the general formula (G3) is limited to the para position. As described above, by adopting the para-phenylene group, the para-phenylene group is arranged on the same plane without twisting the 1,10-phenanthroline ring. Therefore, the effect of the cyclic alkylamino group on increasing the electron density of the 1,10-phenanthroline ring is not easily reduced, so it is preferred.

[0089] Another embodiment of the present invention is an organic compound represented by the general formula (G4).

[0090] [Chemical formula 15]

[0091] In the general formula (G4), R 2 , R 3 , R 5 , R6 , R 8 , R 9 and R 51 To R 58 each independently represents hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, and R 11 To R 18 and R 61 To R 68 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms.

[0092] The organic compound represented by the general formula (G4) is different from the organic compound represented by the general formula (G3) in that the number of rings of the cyclic alkylamino group in the general formula (G4) is limited to 5. The cyclic alkylamino group having a ring number of 5 is more stable than the case where the ring number is 4 or less, and the effect of increasing the electron density of the 1,10-phenanthroline ring is improved compared to the case where the ring number is 6 or more, so it is preferred.

[0093] Next, specific examples of alkyl groups having 1 to 10 carbon atoms, cycloalkyl groups having 3 to 10 carbon atoms, alkoxy groups having 1 to 10 carbon atoms, substituted or unsubstituted cyclic secondary amino groups having 2 to 10 carbon atoms, aryl groups having 6 to 30 carbon atoms, heteroaryl groups having 1 to 30 carbon atoms, and arylene groups having 6 to 30 carbon atoms that can be used in the above general formulae (G1-1) to (G1-4) and (G2) to (G4) are described. Note that in the specific examples described below, part or all of hydrogen may be deuterium. In addition, the groups that can be used in the above general formulae are not limited to the specific examples described below.

[0094] <<Specific examples of the alkyl group having 1 to 10 carbon atoms>> Specific examples of the alkyl group having 1 to 10 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, isobutyl, tert-butyl, pentyl, isopentyl, sec-pentyl, tert-pentyl, neopentyl, hexyl, isohexyl, sec-hexyl, tert-hexyl, neohexyl, 3-methylpentyl, 2-methylpentyl, 2-ethylbutyl, 1,2-dimethylbutyl, 2,3-dimethylbutyl, 1-ethylhexyl, etc. In particular, when the cyclic alkylamino group has an alkyl group having 1 to 10 carbon atoms, when a branched alkyl group such as tert-butyl is used, the surface area of ​​the hydrophilic alkylamino group becomes smaller than when a straight-chain alkyl group having the same molecular weight is used, so that the solubility of the organic compound in water can be further reduced.

[0095] <<Specific examples of the cycloalkyl group having 3 to 10 carbon atoms>> Specific examples of the cycloalkyl group having 3 to 10 carbon atoms include cyclopropyl, cyclobutyl, methylcyclobutyl, cyclopentyl, methylcyclopentyl, isopropylcyclopentyl, tert-butylcyclopropyl, cyclohexyl, methylcyclohexyl, tert-butylcyclohexyl, cycloheptyl, methylcycloheptyl, isopropylcycloheptyl, cyclooctyl, methylcyclooctyl, isopropylcyclohexyl, cyclononyl, methylcyclononyl, cyclodecyl and adamantyl.

[0096] <<Alkoxy group having 1 to 10 carbon atoms>> Specific examples of the alkoxy group having 1 to 10 carbon atoms include methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, sec-butoxy, isobutoxy, tert-butoxy, n-pentoxy, isopentoxy, sec-pentoxy, tert-pentoxy, neopentoxy, n-hexoxy, isohexoxy, sec-hexoxy, tert-hexoxy, neohexyloxy and cyclohexyloxy.

[0097] <<Cyclic secondary amino group having 2 to 10 carbon atoms>> In the present specification, etc., a cyclic secondary amino group having 2 to 10 carbon atoms means a monovalent group obtained by removing a hydrogen atom from a nitrogen atom of a cyclic secondary amine having 2 to 10 carbon atoms. Specific examples of the cyclic secondary amino group having 2 to 10 carbon atoms include pyrrolidin-1-yl, isoindole-2-yl, dihydroisoindol-2-yl, tetrahydroisoindol-2-yl, hexahydroisoindol-2-yl, octahydro-1H-isoindol-2-yl, hexahydroisoindolin-2-yl, piperidin-1-yl, aziridin-1-yl, azetidin-1-yl, octahydrocyclopenta[c]pyrrol-2-yl, octahydro-4,7-methano-1-yl, and the like. H-isoindol-2-yl, 2-azabicyclo[3.1.0]hexane-2-yl, 3-azabicyclo[3.1.0]hexane-2-yl, 3-azabicyclo[3.2.0]heptane-2-yl, 5-azaspiro[3.4]octan-5-yl, 8-azabicyclo[3.2.1]octan-8-yl, 7-azabicyclo[2.2.1]heptane-7-yl, 5-azaspiro[2.4]heptane-5-yl, 5-azabicyclo[2.1.1]hexane-5-yl, etc. When the cyclic secondary amino group having 2 to 10 carbon atoms has a substituent, specific examples of the substituent include alkyl groups having 1 to 10 carbon atoms.

[0098] In addition, specific examples of the substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms include groups represented by the following general formulae (N-1) to (N-4). The groups represented by the following general formulae (N-1) to (N-4) are more preferred because of their high electron donating properties.

[0099] [Chemical formula 16]

[0100] In the general formulae (N-1) to (N-4), R 11 To R 46 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, and t represents 0 or 1. Note that R 11 To R 18 Any two of R can be bonded to each other to form a ring, 19 To R 26 Any two of R can be bonded to each other to form a ring, 27 To R 36 Any two of can be bonded to each other to form a ring, and R 37 To R 46 Any two of may be bonded to each other to form a ring.

[0101] <<Aryl group having 6 to 30 carbon atoms>> Specific examples of the aryl group having 6 to 30 carbon atoms include phenyl, o-tolyl, m-tolyl, p-tolyl, mesityl, o-biphenyl, m-biphenyl, p-biphenyl, 1-naphthyl, 2-naphthyl, fluorenyl, 9,9-dimethylfluorenyl, spirobifluorenyl, phenanthrenyl, anthracenyl, fluoranthenyl group, etc. When the aryl group having 6 to 30 carbon atoms has a substituent, the substituent includes an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, and a phenyl group.

[0102] <<Arylene group having 6 to 30 carbon atoms>> Specific examples of the arylene group having 6 to 30 carbon atoms include phenylene, biphenyl-diyl, naphthalene-diyl, fluorene-diyl, acenaphthene-diyl, anthracene-diyl, terphenyl-diyl, triphenylene-diyl, phenanthrene-diyl, naphthacene-diyl, benzanthracene-diyl, pyrene-diyl, spirobi[9H-fluorene]-diyl, etc. When the arylene group having 6 to 30 carbon atoms has a substituent, the substituent includes an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, and a phenyl group.

[0103] <<Heteroaryl group having 1 to 30 carbon atoms>> In the present specification, etc., a heteroaryl group having 1 to 30 carbon atoms means a monovalent group obtained by removing a hydrogen atom from a ring-constituting carbon atom of a monocyclic or polycyclic heterocyclic aromatic compound having 1 to 30 carbon atoms. Specific examples of the heteroaryl group having 1 to 30 carbon atoms include 1,3,5-triazine-2-yl, 1,2,4-triazine-3-yl, pyrimidin-4-yl, pyrazine-2-yl, 2-pyridyl, 3-pyridyl, 4-pyridyl, carbazolyl, dibenzofuranyl, dibenzothiophenyl, benzonaphthofuranyl, benzonaphthothiophenyl, indolecarbazolyl, benzofuranocarbazolyl, benzothiophenocarbazolyl, indenocarbazolyl, dibenzocarbazolyl and the like. When the arylene group having 6 to 30 carbon atoms has a substituent, examples of the substituent include an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, and a phenyl group.

[0104] The above are examples of substituents that can be used in the above general formula.

[0105] Specific examples of the organic compound of one embodiment of the present invention represented by the above general formula include organic compounds represented by the following structural formulas (100) to (156).

[0106] [Chemical formula 17]

[0107] [Chemical formula 18]

[0108] [Chemical formula 19]

[0109] [Chemical formula 20]

[0110] The organic compounds represented by the above structural formulae (100) to (156) are examples of the organic compounds of one embodiment of the present invention, but one embodiment of the present invention is not limited thereto.

[0111] Next, as an example of an organic compound of one embodiment of the present invention, a method for synthesizing an organic compound represented by the following general formula (G1) is described. Note that various reactions can be used as a method for synthesizing the general formula (G1), and the method is not limited to the following method.

[0112] [Chemical formula 21]

[0113] In the above general formula (G1), R 2To R 9 At least one of them is a group represented by the general formula (R-1), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formula (R-1), α 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same as or different from each other, and R 11 To R 26 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and p and q each independently represent 0 or 1. Note that R 11 To R 18 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by the general formula (R-1), they may be the same as or different from each other.

[0114] As shown in the following synthesis scheme (A-1), a halogen compound or trifluoromethanesulfonate compound (a1) having a 1,10-phenanthroline derivative is coupled with a compound (a2) in which boronic acid is bonded to a group represented by the general formula (R-1) by the Suzuki-Miyaura reaction to obtain an organic compound represented by the general formula (G1) in one embodiment of the present invention.

[0115] [Chemical formula 22]

[0116] In the above compound (a1), X 2 To X 9 At least one of them is a halogen or a triflate group, and the others independently represent hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms.

[0117] In the above compound (a2), Q represents a boron hydroxyl group (-B(OH)2), α 1 represents a substituted or unsubstituted aryl-diyl group, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted aryl-diyl groups may be the same as or different from each other, and R 11 To R 26Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and p and q each independently represent 0 or 1. Note that R 11 To R 18 Any two of them may be bonded to each other to form a ring. Note that when Q in compound (a2) is a boryl hydroxyl group, a boric acid ester or a cyclic triol boric acid salt may also be used.

[0118] In the above synthesis scheme (A-1), m is a positive integer.

[0119] In the above general formula (G1), R 2 To R 9 At least one of them is a group represented by the general formula (R-1), and the others are independently hydrogen (including deuterium), an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms. In the general formula (R-1), α 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, and when n is 2, a plurality of substituted or unsubstituted arylene groups having 6 to 30 carbon atoms may be the same as or different from each other, and R 11 To R 26 Each independently represents hydrogen (including deuterium) or an alkyl group having 1 to 10 carbon atoms, and p and q each independently represent 0 or 1. Note that R 11 To R 18 Any two of can be bonded to each other to form a ring, and in R 2 To R 9 When two or more of the groups are groups represented by the general formula (R-1), they may be the same as or different from each other.

[0120] Examples of palladium catalysts that can be used in the coupling reaction represented by the above-mentioned synthesis scheme (A-1) include palladium (II) acetate, tetrakis (triphenylphosphine) palladium (0), bis (triphenylphosphine) palladium (II) dichloride, etc. In addition, examples of ligands for the palladium catalyst include (±)-2,2'-bis (diphenylphosphino) -1,1'-binaphthyl, tri (o-tolyl) phosphine, triphenylphosphine, tricyclohexylphosphine, etc.

[0121] Examples of the base that can be used in the coupling reaction represented by the above-mentioned synthesis scheme (A-1) include organic bases such as potassium tert-butoxide and inorganic bases such as potassium carbonate and sodium carbonate.

[0122] Examples of the solvent that can be used in the coupling reaction represented by the above synthesis scheme include toluene, xylene, mesitylene, benzene, tetrahydrofuran, dioxane, etc. Note that the solvent that can be used is not limited to these.

[0123] In addition, the reaction carried out in the above synthesis scheme is not limited to the Suzuki-Miyaura reaction, and the Buchwald-Hartwig reaction, the Ueda-Kosugi-Stille coupling reaction using an organic tin compound, the coupling reaction using a Grignard reagent, the Ullmann reaction using copper or a copper compound, the nucleophilic substitution reaction, etc. can also be used.

[0124] In addition, many of the above-mentioned compounds (a1) and compounds (a2) are commercially available or can be synthesized.

[0125] The organic compound of one embodiment of the present invention can be synthesized as described above, but the present invention is not limited thereto, and the organic compound can also be synthesized by other synthesis methods.

[0126] The structure described in this embodiment can be used in combination with the structure described in other embodiment modes as appropriate.

[0127] Implementation Method 2 In this embodiment, refer to Figure 1A and Figure 1B A light-emitting device using an organic compound according to one embodiment of the present invention for an intermediate layer will be described.

[0128] Figure 1A The schematic diagram shows two adjacent series-connected light-emitting devices, namely, the light-emitting device 130a and the light-emitting device 130b, formed on the same insulating surface. The light-emitting device 130a and the light-emitting device 130b are both light-emitting devices in which a portion of an organic compound layer is processed using a lithography technique.

[0129] The light-emitting device 130a is located on the insulating layer 175, and includes a first electrode 101a having an anode, a second electrode 102 having a cathode, and an organic compound layer 103a. The organic compound layer 103a is located between the first electrode 101a and the second electrode 102. In addition, the organic compound layer 103a has a structure in which a first light-emitting unit 501a and a second light-emitting unit 502a are stacked with an intermediate layer 160a sandwiched therebetween. The first light-emitting unit 501a includes a first light-emitting layer 113a_1. The intermediate layer 160a includes a first layer 161a and a second layer 162a. The second light-emitting unit 502a includes a second light-emitting layer 113a_2 and an electron injection layer 115. It can also be said that the intermediate layer 160a is located between the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2.

[0130] In the light-emitting device 130a, each layer other than the electron injection layer 115 in the organic compound layer 103a is processed using a lithography technique. Therefore, each layer other than the electron injection layer 115 in the organic compound layer 103a is separated from the layer in the light-emitting device 130b, which is an adjacent light-emitting device. In addition, the ends (contours) of each layer other than the electron injection layer 115 in the organic compound layer 103a are aligned or approximately aligned in a direction perpendicular to the substrate. That is, the first light-emitting layer 113a_1, the intermediate layer 160a (the first layer 161a and the second layer 162a), and the second light-emitting layer 113a_2 are separated from the first light-emitting layer 113b_1, the intermediate layer 160b (the first layer 161b and the second layer 162b), and the second light-emitting layer 113b_2. In addition, the ends (outlines) of the first light-emitting layer 113a_1, the intermediate layer 160a (the first layer 161a and the second layer 162a), and the second light-emitting layer 113a_2 are aligned or substantially aligned in a direction perpendicular to the substrate.

[0131] The light-emitting device 130b is located on the insulating layer 175, and includes a first electrode 101b having an anode, a second electrode 102 having a cathode, and an organic compound layer 103b. The organic compound layer 103b is located between the first electrode 101b and the second electrode 102. In addition, the organic compound layer 103b has a structure in which a first light-emitting unit 501b and a second light-emitting unit 502b are stacked with an intermediate layer 160b sandwiched therebetween. The first light-emitting unit 501b includes a first light-emitting layer 113b_1. The intermediate layer 160b includes a first layer 161b and a second layer 162b. The second light-emitting unit 502b includes a second light-emitting layer 113b_2 and an electron injection layer 115. It can also be said that the intermediate layer 160b is located between the first light-emitting layer 113b_1 and the second light-emitting layer 113b_2.

[0132] In the light-emitting device 130b, each layer other than the electron injection layer 115 in the organic compound layer 103b is processed using a lithography technique. Therefore, each layer other than the electron injection layer 115 in the organic compound layer 103b is separated from the layer in the light-emitting device 130a, which is an adjacent light-emitting device. In addition, the ends (contours) of each layer other than the electron injection layer 115 in the organic compound layer 103b are aligned or approximately aligned in a direction perpendicular to the substrate. That is, the first light-emitting layer 113b_1, the intermediate layer 160b (the first layer 161b and the second layer 162b), and the second light-emitting layer 113b_2 are separated from the first light-emitting layer 113a_1, the intermediate layer 160a (the first layer 161a and the second layer 162a), and the second light-emitting layer 113a_2. In addition, the ends (outlines) of the first light-emitting layer 113b_1, the intermediate layer 160b (the first layer 161b and the second layer 162b), and the second light-emitting layer 113b_2 are aligned or substantially aligned in a direction perpendicular to the substrate.

[0133] The electron injection layer 115 and the second electrode 102 are preferably formed after processing each layer other than the electron injection layer 115 in the organic compound layer 103a and each layer other than the electron injection layer 115 in the organic compound layer 103b using lithography. That is, the electron injection layer 115 and the second electrode 102 are preferably continuous layers used in common by the light-emitting device 130a and the light-emitting device 130b.

[0134] The use of a donor substance (also called an electron donor) in the electron injection layer 115 is preferred because the driving voltage of the light-emitting device can be reduced. Specific examples of the donor substance typically include alkali metals such as lithium (Li) having a small work function or compounds of the alkali metals.

[0135] When the interface of the organic compound layer with the electron injection layer containing such a donor substance is processed by lithography, the driving voltage of the light-emitting device may increase significantly or the current efficiency may decrease significantly due to the influence of oxygen or water in the atmosphere, or the chemical solution or water in the process. However, in one embodiment of the present invention, the electron injection layer 115 is formed after processing each layer other than the electron injection layer 115 by lithography, thereby preventing the characteristics of the light-emitting device from being degraded even if a donor substance is used as the electron injection layer 115.

[0136] In addition, when the organic compound layer is processed by lithography, the distance d between each layer other than the electron injection layer 115 of the organic compound layer 103a and each layer other than the electron injection layer 115 of the organic compound layer 103b can be reduced compared to the case of mask evaporation. Specifically, the distance d can be reduced to less than 10 μm, less than 8 μm, less than 5 μm, less than 3 μm, less than 2 μm, less than 1.5 μm, less than 1 μm, or less than 0.5 μm. In addition, for example, by using an exposure device for LSI, the distance d can be reduced to, for example, less than 500 nm, less than 200 nm, less than 100 nm, or even less than 50 nm in a process on a silicon wafer.

[0137] In addition, it is preferable that an insulating layer is provided in the gap between each layer other than the electron injection layer 115 of the organic compound layer 103a and each layer other than the electron injection layer 115 of the organic compound layer 103b, so that each layer other than the electron injection layer 115 of the organic compound layer 103a is separated from each layer other than the electron injection layer 115 of the organic compound layer 103b. In this case, there is a region where the insulating layer is in contact with the electron injection layer 115 or the second electrode 102.

[0138] Preferably, in the light-emitting device 130a, the first light-emitting unit 501a further includes a hole injection layer 111a, a first hole transport layer 112a_1, and a first electron transport layer 114a_1 in addition to the first light-emitting layer 113a_1. In addition, the second light-emitting unit 502a further includes a second hole transport layer 112a_2 and a second electron transport layer 114a_2 in addition to the second light-emitting layer 113a_2 and the electron injection layer 115. In addition, the intermediate layer 160a may include a third layer 163a between the first layer 161a and the second layer 162a. Note that, as in the second light-emitting unit 502a, when the surface on the anode side of the light-emitting unit contacts the intermediate layer 160a, the second layer 162a on the cathode side of the intermediate layer 160a may also be used as a hole injection layer of the second light-emitting unit 502a, so a hole injection layer may not be provided in the light-emitting unit, or a hole injection layer may be provided.

[0139] Preferably, in the light-emitting device 130b, the first light-emitting unit 501b further includes a hole injection layer 111b, a first hole transport layer 112b_1, and a first electron transport layer 114b_1 in addition to the first light-emitting layer 113b_1. In addition, the second light-emitting unit 502b further includes a second hole transport layer 112b_2 and a second electron transport layer 114b_2 in addition to the second light-emitting layer 113b_2 and the electron injection layer 115. In addition, the intermediate layer 160b may include a third layer 163b between the first layer 161b and the second layer 162b. Note that, as in the second light-emitting unit 502b, when the surface on the anode side of the light-emitting unit contacts the intermediate layer 160b, the second layer 162b on the cathode side of the intermediate layer 160b may also be used as a hole injection layer of the second light-emitting unit 502b, so a hole injection layer may not be provided in the light-emitting unit, or a hole injection layer may be provided.

[0140] In addition, if Figure 1AAs shown, the top layer of each layer other than the electron injection layer 115 of the organic compound layer 103a is preferably the second electron transport layer 114a_2. Similarly, the top layer of each layer other than the electron injection layer 115 of the organic compound layer 103b is preferably the second electron transport layer 114b_2. By processing the interface on the second electron transport layer 114a_2 and the second electron transport layer 114b_2 using lithography technology, it is not easily affected by oxygen or water in the atmosphere, and the chemical solution or water in the process compared to the case where the interface on the second light-emitting layer 113a_2 and the second light-emitting layer 113b_2 is processed. Therefore, by using an electron transport layer as the top layer of each layer other than the electron injection layer 115 of each organic compound layer, it is further easy to avoid the degradation of the characteristics of the light-emitting device caused by the manufacturing process using lithography technology, but it is preferably processed using lithography technology at least on the upper layer of the second light-emitting layer 113a_2 and the second light-emitting layer 113b_2.

[0141] Note that although Figure 1A In the example in which each organic compound layer includes two light-emitting units, one embodiment of the present invention is not limited to this. Each organic compound layer may also include three or more light-emitting units. By stacking a plurality of light-emitting units with an intermediate layer sandwiched between a pair of electrodes, a light-emitting device that can emit light with high brightness while maintaining a low current density and has high reliability can be realized. In addition, a light-emitting device with low power consumption can also be realized. In addition, although in Figure 1A Although not shown in the figure, each light-emitting unit may include a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injection layer, etc. In addition, each layer may be a stack of two or more layers.

[0142] Note that in this specification, the structure of one of the light-emitting device 130a and the light-emitting device 130b is sometimes shown, but the other of the light-emitting device 130a and the light-emitting device 130b may have the same structure.

[0143] The intermediate layer 160a sandwiched between the first light-emitting unit 501a and the second light-emitting unit 502a can inject electrons into one light-emitting unit and inject holes into the other light-emitting unit when a voltage is applied between the first electrode 101a and the second electrode 102. Figure 1A In the embodiment, when a voltage is applied so that the potential of the second electrode 102 is higher than that of the first electrode 101a, the intermediate layer 160a injects electrons into the first light-emitting unit 501a and injects holes into the second light-emitting unit 502a.

[0144] exist Figure 1AIn the light-emitting device 130a shown, by applying a voltage between a pair of electrodes (the first electrode 101a and the second electrode 102), electrons are injected from the cathode into the electron injection layer 115, and holes are injected from the anode into the hole injection layer 111a, thereby current flows. In addition, electrons are injected from the first layer 161a located on the anode side of the intermediate layer 160a into the first electron transport layer 114a_1 in the first light-emitting unit 501a, and holes are injected from the second layer 162a located on the cathode side of the intermediate layer 160a into the second hole transport layer 112a_2 in the second light-emitting unit 502a. And, the injected carriers (electrons and holes) recombine to form excitons. When the carriers (electrons and holes) in the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 containing the light-emitting material recombine to form excitons, the light-emitting materials contained in the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 are in an excited state, and light can be obtained from the light-emitting material.

[0145] In addition, if Figure 1A As shown, the first layer 161a on the anode side of the intermediate layer 160a is preferably adjacent to the first electron transport layer 114a_1 and disposed between the first electron transport layer 114a_1 and the second light emitting unit 502a. By adopting this structure, electrons can be efficiently injected into the first light emitting unit 501a.

[0146] Here, in order to reduce the driving voltage of the light-emitting device and achieve efficient light emission, it is preferred to reduce the electron injection barrier from the intermediate layer 160a to the first electron transport layer 114a_1 and smoothly inject and transport the electrons generated in the intermediate layer 160a to the first electron transport layer 114a_1. For this reason, an alkali metal or alkaline earth metal or a compound thereof with a small work function is generally used as the intermediate layer 160a. However, the metal and the compound are easily degraded by oxygen or water in the atmosphere and water or liquid used in the processing step using lithography technology, which may cause a significant increase in the driving voltage of the light-emitting device or a significant decrease in the current efficiency.

[0147] Therefore, it is preferred to use a material that is resistant to oxygen and water in the atmosphere and to water and chemicals used in the processing steps utilizing lithography technology for the intermediate layer. To this end, it is preferred to use a metal that is stable to oxygen and water in the atmosphere and resistant to water and chemicals for the intermediate layer 160a. However, this metal is stable and has low electron injection properties, and therefore sometimes an electron injection barrier is formed between the intermediate layer 160a and the first electron transport layer 114a_1, resulting in an increase in the driving voltage of the light-emitting device and a decrease in the luminous efficiency.

[0148] Therefore, in a light-emitting device of one embodiment of the present invention, an organic compound of one embodiment of the present invention is preferably used for the first layer 161a located on the anode side in the intermediate layer 160a, and an organic compound of one embodiment of the present invention and a metal are preferably used. By adopting a structure using an organic compound of one embodiment of the present invention and a metal, the organic compound of one embodiment of the present invention and the metal interact to form a donor energy level (SOMO (singly occupied molecular orbital: Singly Occupied Molecular Orbital) energy level or HOMO (highest occupied molecular orbital: Highest Occupied Molecular Orbital) energy level), the electron injection barrier from the intermediate layer 160a to the first electron transport layer 114a_1 can be reduced and the electrons generated in the intermediate layer 160a can be smoothly injected and transported to the first electron transport layer 114a_1. Therefore, an intermediate layer with good electron injection and resistance to oxygen and water in the atmosphere and water and chemical solutions used in the processing steps using lithography can be formed, so a light-emitting device with a reduced driving voltage and high luminous efficiency can be realized.

[0149] Since metals with small work functions, such as alkali metals and alkaline earth metals, and their compounds are highly reactive with oxygen and water, when used in light-emitting devices processed by lithography, they may cause a decrease in luminous efficiency, an increase in driving voltage, a decrease in driving life, and the generation of shrinkage (non-luminous area at the end of the light-emitting portion), which may sometimes lead to a decrease in the characteristics of the light-emitting device, a decrease in reliability, etc. However, in one embodiment of the present invention, even if alkali metals or alkaline earth metals or their compounds are used, the composite material is stabilized by interaction with the organic compound of one embodiment of the present invention, so that an intermediate layer resistant to oxygen and water in the atmosphere and water and chemical solutions used in the processing steps of lithography can be formed. In one embodiment of the present invention, when an alkali metal or alkaline earth metal or a compound thereof is used as a metal, the donor energy level (SOMO energy level or HOMO energy level) formed by the interaction with the organic compound of one embodiment of the present invention can be a high energy level, which can reduce the electron injection barrier from the intermediate layer 160a to the first electron transport layer 114a_1 to smoothly inject and transport the electrons generated in the intermediate layer 160a to the first electron transport layer 114a_1, so it is preferred.

[0150] In addition, in a light-emitting device of one embodiment of the present invention, any one of transition metals (metal elements in Groups 3 to 11) and metal elements in Groups 12 to 14 among typical metals can be used as metals. These metals have low reactivity with oxygen and water in the atmosphere and water and chemical solutions used in the lithography process. Therefore, when using them in light-emitting devices, there are the following advantages: less degradation caused by water and oxygen that may occur when using metals with small work functions. On the other hand, transition metals (metal elements in Groups 3 to 11) and metal elements in Groups 12 to 14 among typical metals are stable and have low electron injection properties, so they will cause a decrease in the luminous efficiency of the light-emitting device, an increase in the driving voltage, a decrease in the driving life, etc. However, in one embodiment of the present invention, even if a transition metal (a metal element in Group 3 to Group 11) and any one of the metal elements in Group 12 to Group 14 among typical metals are used, it is possible to interact with the organic compound of one embodiment of the present invention to form a donor energy level (SOMO energy level or HOMO energy level), and thus, the electron injection barrier from the intermediate layer 160a to the first electron transport layer 114a_1 can be reduced, and the electrons generated in the intermediate layer 160a can be smoothly injected and transported to the first electron transport layer 114a_1. In addition, an intermediate layer resistant to oxygen and water in the atmosphere and water and liquid medicine used in the processing steps using lithography can be formed, so it is preferred. Therefore, one embodiment of the present invention can provide a light-emitting device with good moisture resistance, good water resistance, good oxygen resistance, good chemical resistance, low driving voltage and good luminous efficiency.

[0151] When the organic compound of one embodiment of the present invention interacts with a metal and the sum of the number of electrons of the organic compound of one embodiment of the present invention and the metal is an odd number, the stability energy becomes small, and the formed donor energy level (SOMO energy level or HOMO energy level) can be made a high energy level, so it is preferred. Therefore, when the number of electrons of the organic compound of one embodiment of the present invention is an even number, the metal is preferably located in an odd group in the periodic table.

[0152] Note that, in view of the manufacturing process of the light-emitting device, in general, the EL layer of the light-emitting device, especially the intermediate layer, is deposited by vacuum evaporation in many cases. As the material used at this time, it is preferred to use a material that can be easily vacuum-deposited, that is, a material with a low melting point. Since the melting point of metals belonging to the 11th group and the 13th group is low, it can be suitable for vacuum evaporation. In addition, metals belonging to the 11th group and the 13th group are stable to oxygen and water in the atmosphere, so they are preferred. In addition, by using the vacuum evaporation method, metal atoms and organic compounds can be easily mixed, so it is preferred.

[0153] In addition, Ag and In can also be used as cathode materials. By using the same material for the intermediate layer and the cathode, the light-emitting device can be manufactured simply, which is preferred. In addition, the manufacturing cost of the light-emitting device can be reduced.

[0154] Next, the detailed structure of the intermediate layer that can be used for the light-emitting device 130a and the light-emitting device 130b will be described.

[0155] <<First Floor>> The first layer (first layer 161a and first layer 161b) located on the anode side of the intermediate layer preferably uses an organic compound of one embodiment of the present invention, and preferably uses a mixed layer or a stacked structure containing a metal and an organic compound of one embodiment of the present invention. The combination of a metal and an organic compound of one embodiment of the present invention is a combination that can interact to form a SOMO or HOMO that can be used as a donor energy level. By using a layer containing these combinations as the first layer of the intermediate layer, the electrons generated in the first layer can be easily injected into the first light-emitting unit. Alternatively, the electrons generated in the second layer (second layer 162a and second layer 162b) located on the cathode side of the intermediate layer can be easily injected into the first light-emitting unit. Therefore, the electron injection into the first light-emitting unit becomes easy, thereby reducing the driving voltage of the light-emitting device and improving the luminous efficiency.

[0156] As the first layer located on the anode side in the intermediate layer, an organic compound of one embodiment of the present invention is preferably used, and a mixed layer or a laminated structure containing a metal and an organic compound of one embodiment of the present invention is preferably used, and when a laminated structure is used, the organic compound of one embodiment of the present invention is preferably used on the anode side and the metal is used on the cathode side for lamination. When the metal and the organic compound of one embodiment of the present invention are used as a mixed layer or a laminated structure, these substances are easy to interact with each other, and the metal and the organic compound of one embodiment of the present invention act as electron donors, so the electron injection barrier from the second light-emitting unit to the first light-emitting unit can be further reduced. As a result, it is easier to inject electrons into the first light-emitting unit, thereby further reducing the driving voltage of the light-emitting device and further improving the luminous efficiency. In addition, when a metal and an organic compound of one embodiment of the present invention are used as a mixed layer, a layer that is not easy to crystallize can be formed compared with the case of using a laminated structure. Therefore, a layer that is not easy to crystallize can be realized even when a part of the organic compound layer is processed by lithography technology and is affected by oxygen or water in the atmosphere, a liquid medicine or water in the process. It is possible to prevent the driving voltage of the light-emitting device from rising or the current efficiency from falling due to the crystallization of the intermediate layer. Therefore, compared with the case of adopting a stacked-layer structure, by adopting a mixed layer, it is possible to appropriately use an intermediate layer of a light-emitting device in which a part of an organic compound layer is processed by lithography.

[0157] <<Metal>> As the metal, a typical metal or a transition metal can be used.

[0158] As typical metals, alkali metals such as Li, Na, K, Cs (Group 1 elements), alkaline earth metals such as Mg, Ca, Ba (Group 2 elements), Group 12 elements such as Zn, earth metals such as Al, In (Group 13 elements), Group 14 elements such as Sn, or their compounds can be used.

[0159] When an alkali metal or alkaline earth metal or a compound thereof is used as the metal, the donor energy level formed by the interaction with the organic compound of one embodiment of the present invention can be a high energy level, and the electrons generated in the intermediate layer can be smoothly injected and transferred to the electron transport layer, so that a light-emitting device with a low driving voltage and high light efficiency can be provided, so it is preferred.

[0160] As transition metals, Group 3 elements including Y and lanthanide elements such as Eu and Yb, Group 7 elements such as Mn, Group 8 elements such as Fe, Group 9 elements such as Co, Group 10 elements such as Ni and Pt, Group 11 elements such as Cu, Ag, and Au, or compounds thereof can be used. Transition metals are preferred because of their low reactivity with components such as water and oxygen in the atmosphere.

[0161] Among the above metals, it is more preferable to use a metal in an odd-numbered group (Group 1, Group 3, Group 5, Group 7, Group 9, Group 11, or Group 13). Among these transition metals in an odd-numbered group, a metal having one electron (unpaired electron) in the outermost orbit is easy to form a SOMO level with an organic compound of one embodiment of the present invention, and is therefore particularly preferred.

[0162] In addition, metals that have a low melting point and can be deposited by vacuum evaporation are preferred because they can easily form a mixed layer with an organic compound. Specifically, for example, metals belonging to Group 11 elements and Group 13 elements have a low melting point and can be applied to vacuum evaporation. In addition, metals belonging to Group 11 elements and Group 13 elements are stable to oxygen and water in the atmosphere and are therefore preferred.

[0163] Note that, as the first layer of the intermediate layer, an organic compound having electron transport properties may be added in addition to the metal and the organic compound of one embodiment of the present invention. As the organic compound having electron transport properties, an organic compound having an electron mobility of 1×10- -7 cm 2 / Vs or more, it is more preferable to use the material having an electron mobility of 1×10 -6 cm 2 In addition, any substance other than the above may be used as long as it has a higher electron-transporting property than a hole-transporting property.

[0164] As an organic compound having electron transport properties, an organic compound containing a π-deficient heteroaromatic ring is preferably used. As an organic compound containing a π-deficient heteroaromatic ring, for example, an organic compound containing a heteroaromatic ring having an azole skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, an organic compound containing a heteroaromatic ring having a diazine skeleton, and an organic compound containing a heteroaromatic ring having a triazine skeleton are preferably used. Any one or more of the above.

[0165] Specific examples of organic compounds having electron transport properties include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2"-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzo[1-nitrophenyl]-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11). organic compounds having an azole skeleton, such as 1,4-bis(5-methylbenzoxazol-2-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviated as mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviated as BzOs); 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviated as 35DCzPPy), 1,3,5-tris[3-(3-pyridyl)phenyl]benzene (abbreviated as TmPyPB), bathophenanthroline (abbreviated as BPhen), bathocuproin (abbreviated as BCP), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviated as NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) organic compounds containing a heteroaromatic ring having a pyridine skeleton, such as 2-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophene-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazole-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazole-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9H-carbazole-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophene-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-dibenzothiophene-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[3'-(dibenzothiophene-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr),5] furano[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophene-4-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazole-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophene-4-yl)phenyl]- [1]benzofurano[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofurano[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furano[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthyl)-6-yl]-4- [3-(dibenzothiophen-4-yl)phenyl]-[1]benzofurano[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9 H-carbazole-2-yl)quinazoline-2-yl]-7H-dibenzo[c,g]carbazole (abbreviated as PC-cgDBCzQz); 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluorene]-2-yl)-1,3,5-triazine (abbreviated as BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as mBnfBPTzn),5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluorene-2-yl)biphenyl-3-yl] ]-4,6-diphenyl-1,3,5-triazine (abbreviated as: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazine-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviated as: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviated as: mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]- 1,3,5-triazine (abbreviated as: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviated as: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazine-2-yl]-11,12-dihydro-12-phenylindole[2,3-a]carbazole (abbreviated as: BP-Icz(II)Tzn), 2-[3'-(triphenylene-2-yl)biphenyl-3 -yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazine-2-yl)-2-dibenzothienyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1"-terphenyl)-4-yl-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), etc.,

[0166] Among them, organic compounds having a phenanthroline ring, such as BPhen, BCP, NBPhen and mPPhen2P, are preferred. Organic compounds having a phenanthroline ring dimer structure, such as mPPhen2P, are more preferred because of their excellent stability.

[0167] In addition, as an organic compound having electron transport properties, the number of carbon atoms is preferably 25 or more and 100 or less. By adopting such a number of carbon atoms, an organic compound with good sublimation properties can be realized, thereby suppressing the thermal decomposition of the organic compound during vacuum evaporation, thereby obtaining good material utilization efficiency. In addition, T g The organic compound is an organic compound having a temperature of 100°C or above. Thus, an intermediate layer that is not easy to crystallize can be realized. Therefore, a layer that is not easy to crystallize can be realized even when a part of the organic compound layer is processed by lithography technology and is affected by oxygen or water in the atmosphere, a chemical solution or water in the process, or even after a heating process for removing water attached to the organic compound layer. Therefore, it is possible to prevent the driving voltage of the light-emitting device from increasing or the current efficiency from decreasing due to the crystallization of the intermediate layer. Therefore, by increasing T g The organic compound having a temperature of 100° C. or higher is used as an organic compound having an electron transport property, and can be suitably used for an intermediate layer of a light-emitting device in which a part of the organic compound layer is processed by lithography.

[0168] As an organic compound having a phenanthroline ring and having a T of 100°C or more g The organic compound may include NBPhen (T g :165℃)、mPPhen2P(T g : 135°C), 2,2'-(biphenyl-4,4'-diyl)bis(9-phenyl-1,10-phenanthroline) (abbreviated as PPhen2BP) (T g : 166°C), 2,2'-biphenyl-3,3'-diylbis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhen2BP) (T g : 144°C), 2,8-bis(phenanthroline-5-yl)dibenzofuran (abbreviation: 2,8Phen2DBf) (T g : 210°C), 5,5',5"-(benzene-1,3,5-triyl)tri-1,10-phenanthroline (abbreviated as: Phen3P) (T g : 257℃) etc.

[0169] In addition, as an organic compound having electron transport properties, an organic compound having an acidity coefficient pKa of 4 or more and less than 8 can be used. Thus, the hole transport property of the organic compound having electron transport properties can be reduced, so the hole transport property of the first layer 161a in the intermediate layer 160a can be reduced, and the holes can be prevented from being transmitted from the first layer 161a to the second layer 162a, thereby obtaining a light-emitting device with high efficiency, so it is preferred. In addition, when the acidity coefficient pKa is too high, the solubility in water becomes higher, so sometimes the resistance to water and liquid used in the process in lithography technology is reduced. Therefore, the acidity coefficient pKa of the organic compound having electron transport properties is preferably 4 or more and less than 8.

[0170] In addition, the metal ratio is preferably 0.1 or more and 10 or less of the molar ratio of the organic compound of one embodiment of the present invention (the sum of the organic compound of one embodiment of the present invention and the organic compound having electron transport properties when an organic compound having electron transport properties is also added), more preferably 0.2 or more and 5 or less, and further preferably 0.5 or more and 2 or less. Alternatively, the volume ratio is preferably 0.01 or more and 0.3 or less, more preferably 0.02 or more and 0.2 or less, and further preferably 0.05 or more and 0.1 or less. By mixing the metal and the organic compound of one embodiment of the present invention at this ratio, an intermediate layer having good electron injection properties can be provided. In the case of also adding an organic compound having electron transport properties, the ratio of the organic compound of one embodiment of the present invention is preferably 0.1 or more and 10 or less of the organic compound having electron transport properties, more preferably 0.2 or more and 5 or less, and further preferably 0.5 or more and 2 or less. By mixing the organic compound of one embodiment of the present invention and the organic compound having electron transport properties at this ratio, an intermediate layer having good electron transport properties can be provided.

[0171] In addition, the thickness of the first layer 161a located on the anode side in the intermediate layer 160a is preferably 3 nm or more and 20 nm or less, and more preferably 5 nm or more and 10 nm or less. Thus, the composite material formed by mixing metals and an organic compound of one embodiment of the present invention can play a good role, thereby providing a light-emitting device with high luminous efficiency.

[0172] <<Second Floor>> When the first layer in the intermediate layer is a mixed layer or a stacked structure containing a metal and an organic compound of one embodiment of the present invention, the second layer is preferably a layer containing a third organic compound and a fourth organic compound (the details of which will be described later). This is preferred because holes can be well injected into the upper light-emitting layer.

[0173] <<Third organic compound>> The third organic compound preferably uses an organic compound having hole transport properties. As the organic compound having hole transport properties, various organic compounds such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, high molecular weight compounds (oligomers, dendrimers, polymers, etc.) can be used. As the organic compound having hole transport properties, it is preferred to use an organic compound having a hole mobility of 1×10 -6 cm 2 / Vs or more. The organic compound having hole transport properties is preferably a compound containing a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the fused aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, etc. are preferred. In addition, as the π-electron-rich heteroaromatic ring, a fused aromatic ring containing at least any one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton is preferred, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which these rings are also fused with an aromatic ring or a heteroaromatic ring is preferred.

[0174] Such an organic compound having hole transport properties preferably has any one of a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, and an anthracene skeleton. In particular, it can be an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine containing a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine through an arylene group. Note that when these organic compounds having hole transport properties are substances containing N, N-bis(4-biphenyl)amino groups, a light-emitting device with a long life can be manufactured, so it is preferred.

[0175] Specific examples of the organic compound having a hole transport property include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4"-phenyltriphenylamine (abbreviated as BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviated as BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviated as BBABnf(6)), furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-N-phenyl-4-benzidine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4"-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4"-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4"-(6; 1'-binaphthyl-2-yl) triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4"-(7;1'-binaphthyl-2-yl) triphenylamine (abbreviation: BBAαNβNB-03), 4,4'-diphenyl-4"-(7-phenyl)naphthyl-2-yl triphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4"-(6;2'-binaphthyl-2-yl) triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4"-(7;2'-binaphthyl-2-yl) triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4"-(4;2'-binaphthyl-1-yl) triphenylamine (abbreviation: BBAβNαNB ), 4,4'-diphenyl-4"-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviated as: BBAβNαNB-02), 4-(4-biphenyl)-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviated as: TPBiAβNB), 4-(3-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviated as: mTPBiAβNBi), 4-(4-biphenyl)-4'-[4-(2-naphthyl)phenyl]-4"-phenyltriphenylamine (abbreviated as: TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviated as: αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviated as: αNBB1BP), 4,4'-Diphenyl-4"-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviation: YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)phenyl]tri(biphenyl-4-yl)amine (abbreviation: YGTBi1BP-02), 4-[4'-(carbazol-9-yl)biphenyl-4-yl]-4'-(2-naphthyl)-4"-phenyltriphenylamine (abbreviation: YGTBiβNB), N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene] -2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluorene-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluorene-9-yl) )triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazole-3 -yl) triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-4-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirobi-9H-fluorene-3-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-2-amine, N,N-bis(9,9-dimethyl-9H-fluorene-2-yl)-9,9'-spirodi-9H-fluorene-1-amine, etc.

[0176] In addition, as organic compounds with hole transport properties, the following aromatic amine compounds can be used: N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B), etc.

[0177] <Fourth organic compound> The fourth organic compound is preferably a substance that has an acceptor property for the third organic compound. As the substance having an acceptor property, an organic compound having an electron withdrawing group (halogen, cyano, etc.) is preferably used, and more preferably an organic compound having one or more halogen groups, one or more cyano groups, or both of one or more halogen groups and one or more cyano groups, and the total number of one or more halogen groups, one or more cyano groups, or both of one or more halogen groups and one or more cyano groups is 4 or more. Specific examples include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), 2-(7-dicyanomethylidene-1,3,4,5,6,8,9,10-octafluoro-7H-pyrene-2-ylidene)malononitrile, etc. In particular, compounds in which an electron withdrawing group is bonded to a condensed aromatic ring having a plurality of hetero atoms, such as HAT-CN, are thermally stable and therefore preferred. In addition, [3] ylidene derivatives having electron-withdrawing groups (especially halogen groups such as fluorine groups and cyano groups) are particularly preferred because of their very high electron-accepting properties. Specifically, they include: α, α', α"-1,2,3-cyclopropane trimethylene tris[4-cyano-2,3,5,6-tetrafluorophenylacetonitrile], α, α', α"-1,2,3-cyclopropane trimethylene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)phenylacetonitrile], α, α', α"-1,2,3-cyclopropane trimethylene tris[2,3,4,5,6-pentafluorophenylacetonitrile]. As substances having acceptor properties, in addition to the above-mentioned organic compounds, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can also be used.

[0178] In addition, in the second layer, it is preferable to observe a signal observed by electron spin resonance. For example, the spin density of the signal observed near the g value of 2.00 is preferably 1×10 17 spins / cm 3 More preferably, 1×10 18 spins / cm 3 More preferably, 1×10 19 spins / cm 3 As a result, the second layer can be used as a charge generation layer. In addition, a light-emitting device with low driving voltage and high efficiency can be manufactured.

[0179] <<Third Floor>> Furthermore, a third layer may be provided between the first layer and the second layer of the intermediate layer in order to facilitate electron transfer between the two layers.

[0180] The third layer contains a substance having electron transport properties and can prevent the interaction between the first layer and the second layer to smoothly transfer electrons. The LUMO energy level of the substance having electron transport properties contained in the third layer is preferably equal to the LUMO energy level of the acceptor substance in the second layer and the layer ( Figure 1A Between the LUMO energy levels of the organic compounds contained in the first electron transport layer 114a_1 in the first light-emitting unit 501a and the first electron transport layer 114b_1 in the first light-emitting unit 501b. Specifically, the LUMO energy level of the substance with electron transport properties used in the third layer is above -5.0eV, preferably above -5.0eV and below -3.0eV, more preferably above -4.30eV and below -3.00eV, and further preferably above -4.30eV and below -3.30eV. At this time, the electrons generated in the second layer can be easily injected into the first layer, so the increase in the driving voltage of the light-emitting device can be suppressed, so it is preferred. In addition, as the substance with electron transport properties used in the third layer, it is preferred to use a phthalocyanine material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0181] Specifically, perylenetetracarboxylic acid derivatives such as diquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA), 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine (abbreviation: HATNA-F6), 3,4,9,10-perylenetetracarboxylic acid diimide (abbreviation: PTCDI), 3,4,9,10-perylenetetracarboxylic acid-bis-benzimidazole (abbreviation: PTCBI), (C 60 -Ih)[5,6]fullerene (abbreviation: C 60 )、(C 70 -D5h)[5,6]fullerene (abbreviation: C 70 ), phthalocyanine (abbreviated as H2Pc). In addition, copper phthalocyanine (abbreviated as CuPc), zinc phthalocyanine (abbreviated as ZnPc), cobalt phthalocyanine (abbreviated as CoPc), iron phthalocyanine (abbreviated as FePc), tin phthalocyanine (abbreviated as SnPc), tin phthalocyanine oxide (abbreviated as SnOPc), titanium phthalocyanine oxide (abbreviated as TiOPc), vanadium phthalocyanine oxide (abbreviated as VOPc), etc., metal phthalocyanines containing copper, zinc, cobalt, iron, chromium, nickel, etc. and their derivatives can be used. In particular, phthalocyanine metal complexes such as copper phthalocyanine or zinc phthalocyanine, or 2,3,8,9,14,15-hexafluorobisquinoxalino[2,3-a:2',3'-c]phenazine are preferably used.

[0182] The thickness of the third layer is preferably from 1 nm to 10 nm, and more preferably from 2 nm to 5 nm.

[0183] Note that in this embodiment, an example in which the organic compound of one embodiment of the present invention is used for an intermediate layer of a light-emitting device in which a portion of the organic compound layer is processed using lithography is shown, but one embodiment of the present invention is not limited to this. The organic compound of one embodiment of the present invention may be used for an intermediate layer of a light-emitting device in which the organic compound layer is not processed using lithography.

[0184] Figure 1B The schematic diagram shows two adjacent single-type light-emitting devices, namely, the light-emitting device 130c and the light-emitting device 130d, formed on the same insulating surface. Both the light-emitting device 130c and the light-emitting device 130d are light-emitting devices in which all layers of the organic compound layer are processed using lithography technology.

[0185] The light emitting device 130c is located on the insulating layer 175 and includes a first electrode 101c having an anode, a second electrode 102 having a cathode, and an organic compound layer 103c. The organic compound layer 103c is located between the first electrode 101c and the second electrode 102. In addition, the organic compound layer 103c includes a light emitting layer 113c and an electron injection layer 115c.

[0186] In the light-emitting device 130c, the organic compound layer 103c is processed using a lithography technique. Therefore, the organic compound layer 103c is separated from the light-emitting device 130d, which is an adjacent light-emitting device. In addition, the ends (contours) of the layers in the organic compound layer 103c are aligned or approximately aligned in a direction perpendicular to the substrate. That is, the light-emitting layer 113c and the electron injection layer 115c are separated from the light-emitting layer 113d and the electron injection layer 115d. In addition, the ends (contours) of the light-emitting layer 113 and the electron injection layer 115c are aligned or approximately aligned in a direction perpendicular to the substrate.

[0187] The light emitting device 130d is located on the insulating layer 175 and includes a first electrode 101d having an anode, a second electrode 102 having a cathode, and an organic compound layer 103d. The organic compound layer 103d is located between the first electrode 101d and the second electrode 102. In addition, the organic compound layer 103d includes a light emitting layer 113d and an electron injection layer 115d.

[0188] In the light-emitting device 130d, the organic compound layer 103d is processed using a lithography technique. Therefore, the organic compound layer 103d is separated from the light-emitting device 130c, which is an adjacent light-emitting device. In addition, the ends (contours) of the layers of the organic compound layer 103d are aligned or approximately aligned in a direction perpendicular to the substrate. That is, the light-emitting layer 113d and the electron injection layer 115d are separated from the light-emitting layer 113c and the electron injection layer 115c. In addition, the ends (contours) of the light-emitting layer 113d and the electron injection layer 115d are aligned or approximately aligned in a direction perpendicular to the substrate.

[0189] The second electrode 102 is preferably formed after processing all layers in the organic compound layer 103c and the organic compound layer 103d by photolithography. That is, the second electrode 102 is preferably a continuous layer used in both the light-emitting devices 130c and 130d.

[0190] In addition, when the organic compound layer is processed by lithography, the distance d between each layer of the organic compound layer 103c and each layer of the organic compound layer 103d can be reduced compared to the case of performing mask evaporation. Specifically, the distance d can be reduced to less than 10 μm, 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less. In addition, for example, by using an exposure device for LSI, the distance d can be reduced to, for example, less than 500 nm, less than 200 nm, less than 100 nm, or even less than 50 nm in a process on a silicon wafer.

[0191] In addition, an insulating layer is preferably provided in the interval between each layer of the organic compound layer 103c and each layer of the organic compound layer 103d to separate each layer of the organic compound layer 103c from each layer of the organic compound layer 103d. In this case, the insulating layer has a region in contact with the second electrode 102.

[0192] In addition, in the light-emitting device 130c, the organic compound layer 103c preferably includes a hole injection layer 111c, a hole transport layer 112c, and an electron transport layer 114c in addition to the light-emitting layer 113c and the electron injection layer 115c. In addition, in the light-emitting device 130d, the organic compound layer 103d preferably includes a hole injection layer 111d, a hole transport layer 112d, and an electron transport layer 114d in addition to the light-emitting layer 113d and the electron injection layer 115d. In addition, each organic compound layer may include a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injection layer, etc. in addition to the above structure. In addition, each layer may also be a stack of two or more layers.

[0193] In the manufacturing method of the light-emitting device 130c and the light-emitting device 130d, after forming all the layers of the organic compound layer, the second electrode 102 is formed by processing using lithography. As described above, when the electron injection layer containing a donor substance is processed by lithography as the interface of the organic compound layer, the driving voltage of the light-emitting device is greatly increased or the current efficiency is significantly reduced due to the influence of oxygen or water in the atmosphere, the liquid or water in the process, and therefore, as the electron injection layer 115c and the electron injection layer 115d, it is preferred to use an organic compound of one embodiment of the present invention, and it is preferred to use a mixed layer or a stacked structure containing a metal and an organic compound of one embodiment of the present invention. Specifically, it is preferred to use the structure of the first layer of the intermediate layer that can be used for the light-emitting device 130a and the light-emitting device 130b for the electron injection layer 115c and the electron injection layer 115d.

[0194] By using an organic compound of one embodiment of the present invention as the electron injection layer 115c and the electron injection layer 115d, or using a mixed layer or a stacked structure containing a metal and an organic compound of one embodiment of the present invention, a light-emitting device with good characteristics can be obtained even if the interface of the electron injection layer 115c and the electron injection layer 115d as the organic compound layer is processed using lithography technology.

[0195] The structure described in this embodiment can be used in combination with the structure described in other embodiment modes as appropriate.

[0196] Implementation 3 In this embodiment, a structure other than the intermediate layer of a light-emitting device using an organic compound which is one embodiment of the present invention is described.

[0197] Figure 2A A light emitting device 130 is shown. The light emitting device 130 is a light emitting device including an organic compound layer 103 having a light emitting layer 113 between a first electrode 101 having an anode and a second electrode 102 having a cathode.

[0198] Figure 2B Another example of a light-emitting device according to one embodiment of the present invention is shown as a light-emitting device 130. The light-emitting device 130 is a tandem light-emitting device and includes a first light-emitting unit 501 including a first light-emitting layer 113_1, a second light-emitting unit 502 including a second light-emitting layer 113_2, and an intermediate layer 160 as an organic compound layer 103.

[0199] Note that in this embodiment, a light-emitting device including one intermediate layer 160 and two light-emitting units is used as an example for description; however, a light-emitting device including n (n is an integer greater than 1) intermediate layers and n+1 light-emitting units may also be used.

[0200] For example, Figure 2C The light-emitting device 130 shown is an example of a tandem light-emitting device, in which n is 2, and includes a first light-emitting unit 501, a first intermediate layer 160_1, a second light-emitting unit 502, a second intermediate layer 160_2, and a third light-emitting unit 503 as an organic compound layer 103. Note that the color gamut of light presented by the light-emitting layer in each light-emitting unit can be the same or different. In addition, the light-emitting layer can have a single layer or a stacked structure. For example, the light-emitting layers in the first light-emitting unit and the third light-emitting unit are made to present light in the blue region, and the light-emitting layer of the stacked structure in the second light-emitting unit is made to present light in the red region and light in the green region, thereby obtaining white light emission.

[0201] For example, Figure 2D The light-emitting device 130 shown is an example of a tandem light-emitting device, in which n is 3, and includes a first light-emitting unit 501, a first intermediate layer 160_1, a second light-emitting unit 502, a second intermediate layer 160_2, a third light-emitting unit 503, a third intermediate layer 160_3, and a fourth light-emitting unit 504 as an organic compound layer 103. The first light-emitting unit 501 includes a first light-emitting layer 113_1, the second light-emitting unit 502 includes a second light-emitting layer 113_2, the third light-emitting unit 503 includes a third light-emitting layer 113_3, and the fourth light-emitting unit 504 includes a fourth light-emitting layer 113_4. Note that the color gamut of light presented by the light-emitting layers in each light-emitting unit may be the same or different. In addition, the light-emitting layer may have a single layer or a stacked layer structure. For example, four light-emitting units can adopt the following structures: a structure in which any three are blue (B) and the remaining one is green (G); a structure in which any two are blue (B) and the remaining two are yellow (Y); and a structure in which any one is red (R), another is green (G), and the remaining two are blue (B), etc.

[0202] The light emitting device 130 may also be a light emitting device manufactured by lithography technology. When a light emitting device manufactured by lithography technology is used, at least the light emitting layer 113 or the second light emitting layer 113_2 and the organic compound layer closer to the first electrode 101 than the above layers are processed simultaneously, so the ends of these layers are roughly aligned in the vertical direction.

[0203] Note that the organic compound layer 103 may include other functional layers in addition to the light-emitting layer. Figure 2A The organic compound layer 103 includes a hole injection layer 111, a hole transport layer 112, an electron transport layer 114, and an electron injection layer 115 in addition to the light-emitting layer 113. The first light-emitting unit 501 and the second light-emitting unit 502 may include other functional layers in addition to the light-emitting layer. Figure 2BThe following structure is shown: the first light-emitting unit 501 is provided with a hole injection layer 111, a first hole transport layer 112_1 and a first electron transport layer 114_1 in addition to the first light-emitting layer 113_1, and the second light-emitting unit 502 is provided with a second hole transport layer 112_2, a second electron transport layer 114_2 and an electron injection layer 115 in addition to the second light-emitting layer 113_2. Note that the structure of the organic compound layer 103 in the present invention is not limited to this, and any of the above layers may not be provided, and other layers may also be provided. As other layers, carrier blocking layers (hole blocking layers, electron blocking layers), exciton blocking layers, etc. can be typically cited.

[0204] Next, the structure of the light emitting device 130 other than the intermediate layer 160 will be described.

[0205] <<Structure of the First Electrode>> The first electrode 101 is an electrode including an anode. The first electrode 101 may also have a stacked structure, in which case the layer in contact with the organic compound layer 103 is used as an anode. The anode is preferably formed using a metal, an alloy, a conductive compound, and a mixture thereof having a large work function (specifically, 4.0 eV or more). Specifically, for example, indium oxide-tin oxide (ITO: Indium Tin Oxide), indium oxide-tin oxide containing silicon or silicon oxide, indium oxide-zinc oxide, indium oxide containing tungsten oxide and zinc oxide (IWZO), etc. may be cited. Although these conductive metal oxide films are usually deposited by sputtering, they can also be formed by applying a sol-gel method, etc. As an example of a formation method, a method of forming indium oxide-zinc oxide by sputtering using a target material having 1wt% to 20wt% of zinc oxide added to indium oxide may be cited. In addition, indium oxide (IWZO) containing tungsten oxide and zinc oxide can also be formed by sputtering using a target material in which 0.5wt% to 5wt% of tungsten oxide and 0.1wt% to 1wt% of zinc oxide are added to indium oxide. In addition, as materials for the anode, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd) or nitrides of metal materials (for example, titanium nitride) can be cited. In addition, graphene can also be used as a material for the anode. In addition, by using the second layer 162 in the above-mentioned intermediate layer 160 as a layer in contact with the anode (typically a hole injection layer), it is possible to select an electrode material without taking into account the work function.

[0206] <<Structure of Hole Injection Layer>> The hole injection layer 111 is in contact with the anode and has the function of making holes easily injected into the organic compound layer 103 (the first light-emitting unit 501). The hole injection layer 111 can be formed using phthalocyanine compounds such as phthalocyanine (abbreviated as H2Pc), copper phthalocyanine (abbreviated as CuPc), etc.; aromatic amine compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviated as DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviated as DNTPD), etc.; or polymers such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviated as PEDOT / PSS), etc.

[0207] Alternatively, the hole injection layer 111 may be formed of a substance having an electron accepting property. As the substance having an electron accepting property, the substances listed above as the substance having an accepting property used for the second layer 162 in the intermediate layer 160 can be used in the same manner.

[0208] Alternatively, the hole injection layer 111 may be formed using a material having a hole transport property used for the second layer 162 in the intermediate layer 160 .

[0209] Note that in the hole injection layer 111, the organic compound having a hole transport property used in the composite material is more preferably a substance having a deeper HOMO level with a HOMO level of -5.7 eV or more and -5.4 eV or less. When the organic compound having a hole transport property used in the composite material has a deeper HOMO level, holes are easily injected into the hole transport layer, and a light-emitting device with a long life can be easily obtained. In addition, when the organic compound having a hole transport property used in the composite material is a substance with a deeper HOMO level, the induction of holes is appropriately suppressed, so a light-emitting device with a longer life can be realized.

[0210] By forming the hole injection layer 111, hole injection properties can be improved, so that a light-emitting device with a low driving voltage can be obtained.

[0211] Furthermore, among substances having acceptor properties, organic compounds having acceptor properties can be easily formed by vapor deposition and are therefore easy-to-use materials.

[0212] In addition, since the second layer 162 in the intermediate layer 160 is used as a hole injection layer, the second light emitting unit 502 is not provided with a hole injection layer, but the second light emitting unit 502 may also be provided with a hole injection layer.

[0213] The hole transport layer (the first hole transport layer 112_1 and the second hole transport layer 112_2) is formed by including an organic compound having a hole transport property. The organic compound having a hole transport property preferably has a 1×10-6 cm 2 / Vs and above hole mobility.

[0214] Examples of the hole-transporting material include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviated as NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviated as TPD), N,N'-bis(9,9'spirobi[9H-fluorene]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviated as BSPB), 4-phenyl-4'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as BPAFLP), 4-phenyl-3'-(9-phenylfluorene-9-yl)triphenylamine (abbreviated as mBPAFLP), and 4-phenyl-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBA1BP). , 4,4'-diphenyl-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4"-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviated as PCNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]fluorene-2-amine (abbreviated as PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazole-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviated as PCBASF), etc.;1,3-Bis(N-carbazolyl)benzene (abbreviated as mCP), 4,4'-bis(N-carbazolyl)biphenyl (abbreviated as CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviated as CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviated as PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviated as BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviated as BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H -3,3'-bicarbazole (abbreviated as: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviated as: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviated as: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviated as: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviated as: BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl ]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole Compounds having a carbazole skeleton such as oxazole, 9-(2-naphthyl)-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviated as PCCzTp), 9,9'-bi(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenyl-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenyl-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole;Compounds having a thiophene skeleton, such as 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), and 4-[4-(9-phenyl-9H-fluorene-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV); and compounds having a furan skeleton, such as 4,4',4"-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), and 4-{3-[3-(9-phenyl-9H-fluorene-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among them, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability and high hole transport properties and help reduce the driving voltage. In addition, the substances listed as the materials having hole transport properties for the composite material used for the hole injection layer 111 can also be appropriately used as materials constituting the hole transport layer. ;

[0215] <<Structure of light-emitting layer>> The light-emitting layer (the light-emitting layer 113, the first light-emitting layer 113_1, and the second light-emitting layer 113_2) preferably contains a light-emitting substance and a host material. Note that the light-emitting layer may also contain other materials. Alternatively, two layers having different compositions may be stacked.

[0216] The light-emitting substance may be a fluorescent substance, a phosphorescent substance, a substance exhibiting thermally activated delayed fluorescence (TADF), or other light-emitting substances.

[0217] In the light-emitting layer, materials that can be used as the fluorescent substance include, for example, the following substances. Note that other fluorescent substances can also be used.

[0218] Examples thereof include 5,6-bis[4-(10-phenyl-9-anthracenyl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthracenyl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N, N'-bis[3-(9-phenyl-9H-fluorene-9-yl)phenyl]pyrene-1,6-diamine (abbreviated as: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviated as: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthracenyl)triphenylamine (abbreviated as: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl -2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), N,N"-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(2-tert-butylanthracene-1 (N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N",N",N"',N"'-octaphenyldibenzo[g,p] -2,7,10,15-tetramine (abbreviation: DBC1), coumarin 30, N-(9,10-diphenyl-2-anthracenyl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthracenyl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthracenyl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), 9,10-bis(2-biphenyl)-2-(N,N',N'-triphenyl-1,4-phenylenediamine-N-yl)anthracene (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2 -yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(1,1'-biphenyl-4-yl)-6,11-diphenylnaphthacene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]vinyl}-6-methyl-4H-pyran-4-ylidene)malononitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethene yl]-4H-pyran-4-ylidene}malononitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)naphthocene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2 ,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]vinyl}-4H-pyran-4-ylidene)malononitrile (abbreviated as: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)vinyl]-4H-pyran-4-ylidene}malononitrile (abbreviated as: BisDCJTM), N,N'-diphenyl-N,N'-(1,6-pyrene-diyl)bis[(6-phenylbenzo[b]naphtho[1,2-d] furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazole-2-yl)-N-phenylamino] naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino] naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02), etc. In particular, condensed aromatic diamine compounds represented by pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferred because they have good hole-trapping properties and high luminous efficiency or good reliability. ,

[0219] When a phosphorescent substance is used as a light-emitting substance in the light-emitting layer, examples of usable materials include the following substances.

[0220] Examples include organometallic iridium complexes having a 4H-triazole skeleton, such as tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviated as [Ir(mpptz-dmp)3]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Mptz)3]), and tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazole]iridium(III) (abbreviated as [Ir(iPrptz-3b)3]); tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazole]iridium(III) (abbreviated as [Ir [Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazole)iridium(III) (abbreviated as [Ir(Prptz1-Me)3]), etc. having an organometallic iridium complex with a 1H-triazole skeleton; fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviated as [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviated as [Ir(dmpimpt-Me)3]), etc. having an imidazole skeleton; and bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ ]iridium(III)tetrakis(1-pyrazolyl)borate (abbreviated as FIr6), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’] iridium (III) picolinate (FIrpic), bis {2-[3', 5'-bis (trifluoromethyl) phenyl] pyridinium-N, C 2’ Iridium(III) picolinate (abbreviated as [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinium-N,C 2’ ] Iridium (III) acetylacetonate (abbreviated as FIracac) and other organic metal iridium complexes with phenylpyridine derivatives having electron-withdrawing groups as ligands. The above substances are compounds that emit blue phosphorescence and have a luminescence peak in the wavelength region of 450nm to 520nm.

[0221] In addition, tris(4-methyl-6-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-tert-butyl-6-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonate)bis(6-methyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonate)bis(6-tert-butyl-4-phenylpyrimidinyl)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonate)bis[6-(2-norbornyl)-4-phenylpyrimidinyl]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonate)bis[5-methyl -6-(2-methylphenyl)-4-phenylpyrimidinyl]iridium(III) (abbreviated as [Ir(mpmppm)2(acac)]), (acetylacetonate)bis(4,6-diphenylpyrimidinyl)iridium(III) (abbreviated as [Ir(dppm)2(acac)]) and the like organic metal iridium complexes having a pyrimidine skeleton; (acetylacetonate)bis(3,5-dimethyl-2-phenylpyrazinyl)iridium(III) (abbreviated as [Ir(mppr-Me)2(acac)]), (acetylacetonate)bis(5-isopropyl-3-methyl-2-phenylpyrazinyl)iridium(III) (abbreviated as [Ir(mppr-iPr)2(acac)]) and the like organic metal iridium complexes having a pyrazine skeleton; tris(2-phenylpyridinyl-N,C 2’ )iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinium-N,C 2’ )iridium(III)acetylacetonate (abbreviated as [Ir(ppy)2(acac)]), bis(benzo[h]quinoline)iridium(III)acetylacetonate (abbreviated as [Ir(bzq)2(acac)]), tris(benzo[h]quinoline)iridium(III) (abbreviated as [Ir(bzq)3]), tris(2-phenylquinoline-N,C 2’)iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinoline-N,C 2’ )iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridyl-κN)benzofurano[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridyl-κN]benzofurano[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5mtpy-d3)2(mbfpypy-d3)), Organometallic iridium complexes having a pyridine skeleton, such as [2-d3-methyl-(2-pyridyl-κN)benzofurano[2,3-b]pyridine-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridyl-κN)phenyl-κC]bis[2-(2-pyridyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(ppy)2(mdppy)); and rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviated as [Tb(acac)3(Phen)]). The above substances are mainly compounds that exhibit green phosphorescence and have a luminescence peak in the wavelength region of 500nm to 600nm. In addition, an organometallic iridium complex having a pyrimidine skeleton is particularly preferred because it has particularly excellent reliability and luminous efficiency.

[0222] In addition, organic metal iridium complexes having a pyrimidine skeleton include: (diisobutyrylmethane)bis[4,6-bis(3-methylphenyl)pyrimidinyl]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinyl](dipivaloylmethanyl)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), bis[4,6-di(naphthalene-1-yl)pyrimidinyl](dipivaloylmethanyl)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]); Organometallic iridium complexes having a pyrazine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazine)iridium(III) (abbreviated as [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazine)(dipivaloylmethano)iridium(III) (abbreviated as [Ir(tppr)2(dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviated as [Ir(Fdpq)2(acac)]); tris(1-phenylisoquinoline-N,C 2’ )iridium(III) (abbreviated as [Ir(piq)3]), bis(1-phenylisoquinoline-N,C 2’ ) iridium (III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]) and other organic metal iridium complexes having a pyridine skeleton; 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum (II) (abbreviation: PtOEP) and other platinum complexes; and tris (1,3-diphenyl-1,3-propanedionato) (monophenanthroline) europium (III) (abbreviation: [Eu(DBM)3(Phen)]), tris [1-(2-thenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: [Eu(TTA)3(Phen)] and other rare earth metal complexes. The above substances are compounds that exhibit red phosphorescence and have a luminescence peak in the wavelength region of 600nm to 700nm. In addition, organometallic iridium complexes with a pyrazine skeleton can obtain red luminescence with good chromaticity.

[0223] Furthermore, in addition to the above-mentioned phosphorescent compounds, known phosphorescent compounds may be selected and used.

[0224] As TADF materials, fullerene and its derivatives, acridine and its derivatives, and eosin derivatives can be used. In addition, metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd) can also be mentioned. As the metal-containing porphyrin, for example, there can be mentioned protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), protoporphyrin-tin fluoride complex (SnF2(Etio I)) and octaethylporphyrin-platinum chloride complex (PtCl2OEP) represented by the following structural formula.

[0225] [Chemical formula 23]

[0226] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazole-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazine-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazole-3-yl)-9H-carbazole-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazine-10-yl)phenyl]-4,6-diphenyl-1,3 The invention also includes heterocyclic compounds having one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, such as 5-triazine (abbreviation: PXZ-TRZ), 3-[4-(5-phenyl-5,10-dihydrophenazine-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-oxanthene-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridinium)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]-10'-one (abbreviation: ACRSA). The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and both electron transport and hole transport are high, so it is preferred. Among them, in the skeleton with a π-electron-deficient heteroaromatic ring, a pyridine skeleton, a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton) and a triazine skeleton are stable and have good reliability, so it is preferred. In particular, the acceptor of the benzofuran pyrimidine skeleton, the benzothiophene pyrimidine skeleton, the benzofuran pyrazine skeleton, and the benzothiophene pyrazine skeleton is high and has good reliability, so it is preferred. In addition, in the skeleton with a π-type electron-rich heteroaromatic ring, an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton and a pyrrole skeleton are stable and have good reliability, so it is preferred to have at least one of the above-mentioned skeletons. In addition, as a furan skeleton, a dibenzofuran skeleton is preferably used, and as a thiophene skeleton, a dibenzothiophene skeleton is preferably used. As the pyrrole skeleton, it is particularly preferred to use an indole skeleton, a carbazole skeleton, an indolecarbazole skeleton, a bicarbazole skeleton, and a 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeleton. In a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded, the electron donation property of the π-electron-rich heteroaromatic ring and the electron acceptance property of the π-electron-deficient heteroaromatic ring are both high, and the energy difference between the S1 energy level and the T1 energy level becomes small, so that thermally activated delayed fluorescence can be efficiently obtained, so it is particularly preferred. Note that an aromatic ring bonded with an electron-withdrawing group such as a cyano group can also be used instead of a π-electron-deficient heteroaromatic ring. In addition, as a π-electron-rich skeleton, an aromatic amine skeleton, a phenazine skeleton, etc. can be used.In addition, as the π-electron-deficient skeleton, a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane and boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanophenyl, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. can be used. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used to replace at least one of the π-electron-deficient heteroaromatic ring and the π-electron-rich heteroaromatic ring.

[0227] [Chemical formula 24]

[0228] In addition, as a TADF material, a TADF material in which a singlet excited state and a triplet excited state are in thermal equilibrium can also be used. Since such a TADF material has a short luminescence lifetime (excitation lifetime), it can suppress the reduction in efficiency in the high brightness area of ​​the light-emitting device. Specifically, materials having the following molecular structures can be cited.

[0229] [Chemical formula 25]

[0230] TADF materials refer to materials with a small difference between the S1 energy level and the T1 energy level and the function of converting triplet excitation energy into singlet excitation energy through anti-intersystem crossing. Therefore, it is possible to up-convert triplet excitation energy into singlet excitation energy (anti-intersystem crossing) through tiny thermal energy and efficiently generate singlet excited states. In addition, triplet excitation energy can be converted into luminescence.

[0231] The exciplex formed by two substances in an excited state has the function of a TADF material that can convert triplet excitation energy into singlet excitation energy because the difference between the S1 energy level and the T1 energy level is extremely small.

[0232] Note that as an indicator of the T1 level, a phosphorescence spectrum observed at a low temperature (e.g., 77 K to 10 K) can be used. With respect to the TADF material, when the wavelength energy of an extrapolated line obtained by cutting a line at the tail of the short wavelength side of the fluorescence spectrum is taken as the S1 level and the wavelength energy of an extrapolated line obtained by cutting a line at the tail of the short wavelength side of the phosphorescence spectrum is taken as the T1 level, it is preferred that the difference between the S1 level and the T1 level be 0.3 eV or less, more preferably 0.2 eV or less.

[0233] In addition, when a TADF material is used as a light-emitting substance, the S1 energy level of the host material is preferably higher than the S1 energy level of the TADF material. In addition, the T1 energy level of the host material is preferably higher than the T1 energy level of the TADF material.

[0234] As the host material of the light-emitting layer, various carrier transport materials such as a material having an electron transport property and / or a material having a hole transport property, and the above-mentioned TADF material can be used.

[0235] As the material having a hole transporting property, the above-mentioned materials having a hole transporting property can be used in the same manner.

[0236] As the material having an electron-transporting property, the above-mentioned materials having an electron-transporting property can be used in the same manner.

[0237] As a TADF material that can be used as a host material, the same material as the material cited above as a TADF material can be used. When a TADF material is used as a host material, the triplet excitation energy generated by the TADF material is converted into singlet excitation energy through anti-intersystem crossing and further energy is transferred to the luminescent material, thereby improving the luminous efficiency of the light-emitting device. At this time, the TADF material is used as an energy donor and the luminescent material is used as an energy acceptor.

[0238] This is very effective when the above-mentioned luminescent material is a fluorescent luminescent material. In addition, at this time, in order to obtain high luminous efficiency, the S1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent luminescent material. In addition, the T1 energy level of the TADF material is preferably higher than the S1 energy level of the fluorescent luminescent material. Therefore, the T1 energy level of the TADF material is preferably higher than the T1 energy level of the fluorescent luminescent material.

[0239] In addition, it is preferable to use a TADF material that emits light at a wavelength overlapping with the absorption band on the lowest energy side of the fluorescent material. This is preferable because the excitation energy is smoothly transferred from the TADF material to the fluorescent material, and light emission can be obtained efficiently.

[0240] In order to efficiently generate singlet excitation energy from triplet excitation energy through anti-intersystem crossing, carrier recombination is preferably generated in the TADF material. In addition, it is preferred that the triplet excitation energy generated in the TADF material is not transferred to the triplet excitation energy of the fluorescent material. For this reason, the fluorescent material preferably has a protecting group around the luminophore (the skeleton that becomes the cause of luminescence) possessed by the fluorescent material. As the protecting group, it is preferably a substituent without a π bond, preferably a saturated hydrocarbon, specifically, an alkyl group having a carbon number of 3 or more and 10 or less, a substituted or unsubstituted cycloalkyl group having a carbon number of 3 or more and 10 or less, and a trialkylsilyl group having a carbon number of 3 or more and 10 or less, more preferably having multiple protecting groups. The substituent without a π bond has almost no function of transmitting carriers, so it has almost no effect on carrier transmission or carrier recombination, and the luminophore of the TADF material and the fluorescent material can be kept away from each other. Here, the luminophore refers to the atomic group (skeleton) that becomes the cause of luminescence in the fluorescent material. The luminophore preferably has a π-bond skeleton, preferably contains an aromatic ring, and preferably has a condensed aromatic ring or a condensed heteroaromatic ring. Examples of the luminophore include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, In particular, the naphthalene skeleton, the anthracene skeleton, the fluorene skeleton, the Fluorescent substances having a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because they have high fluorescence quantum yields.

[0241] When a fluorescent material is used as a luminescent material, a material having an anthracene skeleton is preferably used as a host material. By using a substance having an anthracene skeleton as a host material of a fluorescent material, a light-emitting layer having high luminous efficiency and durability can be achieved. Among the substances having an anthracene skeleton used as a host material, substances having a diphenylanthracene skeleton, especially a 9,10-diphenylanthracene skeleton, are chemically stable, so they are preferred. In addition, when the host material has a carbazole skeleton, the injection / transport properties of holes are improved, so it is preferred, but when a benzocarbazole skeleton having a benzene ring also fused to a carbazole skeleton is used, the HOMO energy level is about 0.1eV shallower than that of a host material having a carbazole skeleton, and holes are easily injected, so it is more preferred. In particular, when the host material has a dibenzocarbazole skeleton, its HOMO energy level is about 0.1eV shallower than that of a host material having a carbazole skeleton, so not only are holes easily injected, but hole transport properties and heat resistance are also improved, so it is preferred. Therefore, as a host material, a material having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton) is more preferable. Note that from the viewpoint of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton. Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviated as PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviated as CzPA), 7-[4-(10-phenyl-9-anthracenyl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviated as cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthracenyl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviated as 2mBnfPPA), 9-phenyl-10-[4′-(9-phenyl-9H-fluoren-9-yl)phenyl]-9H-carbazole (abbreviated as CzPA),

[0013] anthracene (abbreviation: FLPPA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α, β-ADN), 2-(10-phenylanthracene-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferred because they exhibit very good properties.

[0242] In addition, the host material may also be a material mixed with multiple substances. When a mixed host material is used, it is preferred to mix a material having an electron transport property and a material having a hole transport property. By mixing a material having an electron transport property and a material having a hole transport property, it is easier to adjust the transport property of the light-emitting layer 113, and it is also easier to control the recombination region. The weight ratio of the content of the material having a hole transport property to the material having an electron transport property is 1:19 to 19:1.

[0243] Note that as part of the above mixed material, a phosphorescent substance may be used. When a fluorescent substance is used as a light-emitting substance, the phosphorescent substance may be used as an energy donor for supplying excitation energy to the fluorescent substance.

[0244] In addition, these mixed materials can also be used to form an exciplex. By selecting the mixed material in a manner to form an exciplex that exhibits light overlapping with the wavelength of the absorption band on the lowest energy side of the luminescent substance, energy transfer can be smoothed, thereby efficiently obtaining luminescence, so it is preferred. In addition, by adopting this structure, the driving voltage can be reduced, so it is preferred.

[0245] Note that at least one of the materials forming the exciplex may be a phosphorescent substance. In this way, triplet excitation energy can be efficiently converted into singlet excitation energy via anti-intersystem crossing.

[0246] Regarding the combination of materials that efficiently form an exciplex, the HOMO energy level of the material having hole transport properties is preferably higher than the HOMO energy level of the material having electron transport properties. In addition, the LUMO energy level of the material having hole transport properties is preferably higher than the LUMO energy level of the material having electron transport properties. Note that the LUMO energy level and HOMO energy level of the material can be obtained from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV) measurement.

[0247] Note that the formation of an exciplex can be confirmed, for example, by comparing the emission spectra of a material having hole transport properties, the emission spectra of a material having electron transport properties, and the emission spectra of a mixed film formed by mixing these materials. When the emission spectrum of the mixed film is observed to drift toward the long wavelength side compared to the emission spectrum of each material (or to have a new peak on the long wavelength side), it indicates that an exciplex has been formed. Alternatively, the transient photoluminescence (PL) of a material having hole transport properties, the transient PL of a material having electron transport properties, and the transient PL of a mixed film formed by mixing these materials are compared. When the transient response is different, such as the ratio of the transient PL lifetime of the mixed film to the transient PL lifetime of each material having a long-life component or a delayed component becomes larger, it indicates that an exciplex has been formed. In addition, the above-mentioned transient PL can be referred to as transient electroluminescence (EL). In other words, the formation of an exciplex can be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and the transient EL of a mixed film of these materials and observing the difference in transient response.

[0248] <<Structure of Electron Transport Layer>> The electron transport layer (electron transport layer 114, first electron transport layer 114_1, second electron transport layer 114_2) is a layer containing a substance having an electron transport property. The substance having an electron transport property is preferably a substance having an electron mobility of 1×10 -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 / Vs or more. In addition, as long as the electron transport property is higher than the hole transport property, substances other than the above can be used. As the above-mentioned organic compound, it is preferred to use an organic compound containing a π-electron-deficient heteroaromatic ring. As an organic compound containing a π-electron-deficient heteroaromatic ring, for example, it is preferred to use any one or more of an organic compound containing a heteroaromatic ring having an azole skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, an organic compound containing a heteroaromatic ring having a diazine skeleton, and an organic compound containing a heteroaromatic ring having a triazine skeleton.

[0249] As an electron transport layer, an organic compound of one embodiment of the present invention described in Embodiment 1 can be used. In addition, an organic compound that can be used as an organic compound with electron transport properties in the first layer of the intermediate layer 160 can be used in the same manner. In particular, an organic compound containing a heteroaromatic ring having a diazine skeleton, an organic compound containing a heteroaromatic ring having a pyridine skeleton, or an organic compound containing a heteroaromatic ring having a triazine skeleton has good reliability, so it is preferred. In particular, an organic compound containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and an organic compound containing a heteroaromatic ring having a triazine skeleton have high electron transport properties, which helps to reduce the driving voltage.

[0250] In addition, the electron transport layer preferably has an electron mobility of 1×10 -7 cm 2 / Vs or above and 5×10 -5 cm 2 / Vs or less. By reducing the transportability of electrons in the electron transport layer, the amount of electrons injected into the light-emitting layer can be controlled, thereby preventing the light-emitting layer from becoming in a state with too many electrons. When a composite material is used to form a hole injection layer and the HOMO energy level of the material with hole transport properties in the composite material is deep, that is, above -5.7eV and below -5.4eV, a long life can be obtained, so it is particularly preferred. Note that at this time, the HOMO energy level of the material with electron transport properties is preferably above -6.0eV.

[0251] <<Structure of electron injection layer>> As the electron injection layer 115, a layer containing an alkali metal, alkaline earth metal, rare earth metal, or a compound or complex thereof such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-hydroxyquinoline-lithium (abbreviated as: Liq), ytterbium (Yb), etc., or a layer containing an alkali metal, alkaline earth metal, or a rare earth metal, or a compound or complex thereof may be provided. The electron injection layer 115 may use a layer or an electron compound (electride) in which an alkali metal, alkaline earth metal, or a compound thereof is contained in a layer composed of a substance having electron transport properties. As the electron compound, for example, a substance in which electrons are added to a mixed oxide of calcium and aluminum at a high concentration may be cited.

[0252] Note that a layer containing a fluoride of an alkali metal or alkaline earth metal in a microcrystalline state at a concentration of 50 wt % or more may be used as the electron injection layer 115. Since this layer has a low refractive index, a light-emitting device with better external quantum efficiency can be provided.

[0253] The electron-injection layer 115 can use the organic compound of one embodiment of the present invention described in Embodiment 1. Alternatively, the structure of the first layer using the organic compound of one embodiment of the present invention described in Embodiment 2 can be used for the electron-injection layer 115 .

[0254] <<Structure of the Second Electrode>> The second electrode 102 is an electrode including a cathode. The second electrode 102 may also have a laminated structure, in which case the layer in contact with the organic compound layer 103 is used as a cathode. As a material forming the cathode, metals, alloys, conductive compounds, and mixtures thereof with a small work function (specifically less than 3.8 eV) may be used. As specific examples of such cathode materials, elements of Group 1 or Group 2 in the periodic table, such as alkali metals such as lithium (Li) or cesium (Cs), magnesium (Mg), calcium (Ca), or strontium (Sr), and alloys containing them (MgAg, AlLi), rare earth metals such as europium (Eu), ytterbium (Yb), and alloys containing them may be cited. However, by providing an electron injection layer between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide, etc. may be used as cathodes regardless of the size of the work function.

[0255] In the case where the second electrode 102 is formed of a material having a property of transmitting visible light, a light-emitting device that emits light from the second electrode 102 side can be formed.

[0256] These conductive materials can be deposited by a dry method such as vacuum evaporation or sputtering, an inkjet method, a spin coating method, etc. Alternatively, they can be formed by a wet method such as a sol-gel method or a wet method using a paste of a metal material.

[0257] The organic compound layer 103 can be formed by any of a variety of methods, whether dry or wet. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, or spin coating can be used.

[0258] In addition, the above-mentioned electrodes or layers may also be formed by using different deposition methods.

[0259] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0260] Implementation 4 like Figure 3A and Figure 3BAs shown in FIG. 1 , a plurality of light-emitting devices 130 are formed on an insulating layer 175 to form a display device. In this embodiment, a display device according to one embodiment of the present invention is described in detail.

[0261] The display device 100 includes a pixel portion 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 includes a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0262] In this specification, for example, the sub-pixel 110 may be used to describe the common contents among the sub-pixel 110R, the sub-pixel 110G, and the sub-pixel 110B. In addition, for other components distinguished by letters, reference numerals without letters may be used to describe the common contents among the components.

[0263] Sub-pixel 110R presents red light, sub-pixel 110G presents green light, and sub-pixel 110B presents blue light. Thus, an image can be displayed on the pixel portion 177. Note that in this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are used as examples for explanation, and sub-pixels of other colors may also be combined. In addition, the number of sub-pixels is not limited to three, but may be four or more. As four sub-pixels, for example: sub-pixels of four colors, R, G, B, and white (W); sub-pixels of four colors, R, G, B, and yellow (Y); and sub-pixels of four colors, R, G, B, and infrared light (IR); etc.

[0264] In this specification and the like, the row direction may be referred to as the X direction and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly intersect.

[0265] exist Figure 3A In the example shown, sub-pixels of different colors are arranged in the X direction, and sub-pixels of the same color are arranged in the Y direction. Note that sub-pixels of different colors may be arranged in the Y direction, and sub-pixels of the same color may be arranged in the X direction.

[0266] The connection portion 140 is provided outside the pixel portion 177, and a region 141 may be provided. The region 141 is provided between the pixel portion 177 and the connection portion 140. The organic compound layer 103 is provided in the region 141. In addition, the connection portion 140 is provided with a conductive layer 151C.

[0267] exist Figure 3A In the example shown, the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but there is no particular limitation on the positions of the region 141 and the connection portion 140. In addition, the region 141 and the connection portion 140 may be one or more.

[0268] Figure 3B is along Figure 3A An example of a cross-sectional view along the dot-dash line A1-A2 in FIG. Figure 3B As shown, the display device 100 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is disposed on a substrate (not shown). The insulating layer 175, the insulating layer 174, and the insulating layer 173 are provided with openings that reach the conductive layer 172, and a plug 176 is provided in a manner of being embedded in the opening.

[0269] In the pixel portion 177, the light emitting device 130 is provided on the insulating layer 175 and the plug 176. The protective layer 131 is provided so as to cover the light emitting device 130. The substrate 120 is bonded to the protective layer 131 via the resin layer 122. In addition, the inorganic insulating layer 125 and the insulating layer 127 on the inorganic insulating layer 125 are preferably provided between adjacent light emitting devices 130.

[0270] Figure 3B Although the cross sections of the plurality of inorganic insulating layers 125 and the plurality of insulating layers 127 are shown, the inorganic insulating layers 125 and the insulating layers 127 are preferably formed as a continuous layer when the display device 100 is viewed from above. That is, the inorganic insulating layers 125 and the insulating layers 127 are preferably insulating layers having openings on the first electrodes.

[0271] Figure 3B As the light emitting device 130, a light emitting device 130R, a light emitting device 130G, and a light emitting device 130B are shown. The light emitting device 130R, the light emitting device 130G, and the light emitting device 130B emit light of different colors. For example, the light emitting device 130R may emit red light, the light emitting device 130G may emit green light, and the light emitting device 130B may emit blue light. In addition, the light emitting device 130R, the light emitting device 130G, or the light emitting device 130B may also emit other visible light or infrared light.

[0272] The display device of one embodiment of the present invention may have, for example, a top emission structure that emits light in a direction opposite to a substrate on which a light-emitting device is formed. Alternatively, the display device of one embodiment of the present invention may have a bottom emission structure.

[0273] Examples of the light-emitting material contained in the light-emitting device 130 include organic compounds or organometallic complexes such as materials that emit fluorescence (fluorescent materials), materials that emit phosphorescence (phosphorescent materials), and materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials). Inorganic compounds such as quantum dots may also be used.

[0274] The light-emitting device 130R has a structure as described in Embodiment 2 and Embodiment 3. The light-emitting device 130R includes a first electrode (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 155 on the common layer 104. The common layer 104 may or may not be provided, but when the common layer 104 is provided, damage to the organic compound layer 103R during processing can be reduced, so it is preferred. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. In addition, when the common layer 104 is provided, the stacked structure of the organic compound layer 103R and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 2 and Embodiment 3.

[0275] The light-emitting device 130G has the structure described in Embodiment 2 and Embodiment 3. The light-emitting device 130G includes a first electrode (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 155 on the common layer 104. The common layer 104 may or may not be provided, but when the common layer 104 is provided, damage to the organic compound layer 103G during processing can be reduced, so it is preferred. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. In addition, when the common layer 104 is provided, the stacked structure of the organic compound layer 103G and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 2 and Embodiment 3.

[0276] The light-emitting device 130B has a structure as described in Embodiment 2 and Embodiment 3. The light-emitting device 130B includes a first electrode (pixel electrode) composed of a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 155 on the common layer 104. The common layer 104 may or may not be provided, but when the common layer 104 is provided, damage to the organic compound layer 103B during processing can be reduced, so it is preferred. When the common layer 104 is provided, the common layer 104 is preferably an electron injection layer. In addition, when the common layer 104 is provided, the stacked structure of the organic compound layer 103B and the common layer 104 is equivalent to the organic compound layer 103 in Embodiment 2 and Embodiment 3.

[0277] One of the pixel electrode and the common electrode included in the light emitting device is used as an anode, and the other is used as a cathode. Unless otherwise specified, the following description is based on the premise that the pixel electrode is used as an anode and the common electrode is used as a cathode.

[0278] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are each formed in an island shape or independently for each light-emitting color. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed in a high-definition display device. As a result, crosstalk can be suppressed, and a display device with extremely high contrast can be realized. In particular, a display device with high current efficiency at low brightness can be realized.

[0279] The island-shaped organic compound layer 103 is formed by depositing an EL film and processing the EL film using a photolithography technique.

[0280] In the display device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked structure. Figure 3BIn the example shown, the first electrode of the light-emitting device 130 has a stacked structure of a conductive layer 151 and a conductive layer 152. For example, when the display device 100 has a top emission structure and the pixel electrode of the light-emitting device 130 is used as an anode, it is preferred that the conductive layer 151 is a layer with a high visible light reflectivity, and the conductive layer 152 is, for example, a layer with visible light transmittance and a large work function. When the display device 100 has a top emission structure, the higher the visible light reflectivity of the pixel electrode, the higher the light extraction efficiency emitted by the organic compound layer 103 can be improved. In addition, when the pixel electrode is used as an anode, the larger the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Thus, by having the pixel electrode of the light-emitting device 130 have a stacked structure of a conductive layer 151 with a high visible light reflectivity and a conductive layer 152 with a large work function, the light-emitting device 130 can be a light-emitting element with high light extraction efficiency and low driving voltage.

[0281] When the conductive layer 151 is a layer having a high visible light reflectivity, the visible light reflectivity of the conductive layer 151 is preferably, for example, 40% to 100%, and more preferably 70% to 100%. When the conductive layer 152 is an electrode having visible light transmittance, the visible light transmittance is preferably, for example, 40% or more.

[0282] Here, when the pixel electrode has a multi-layer stacked structure, the pixel electrode is degraded by, for example, a reaction between the multiple layers. For example, when a film formed after forming the pixel electrode is removed by wet etching, galvanic corrosion occurs due to the contact of a chemical solution with the pixel electrode.

[0283] In view of this, in the display device 100 of the present embodiment, the conductive layer 152 is formed in a manner covering the top surface and the side surface of the conductive layer 151. Thus, for example, when a film formed after forming a pixel electrode including the conductive layer 151 and the conductive layer 152 is removed by a wet etching method, it is also possible to suppress the contact of the chemical solution with the conductive layer 151. Therefore, for example, galvanic corrosion can be suppressed in the pixel electrode. Therefore, the display device 100 can be manufactured by a method with a high yield rate, so that an inexpensive display device can be realized. In addition, it is possible to suppress the occurrence of defects in the display device 100, so the display device 100 can be a display device with high reliability.

[0284] For example, a metal material can be used as the conductive layer 151. Specifically, for example, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), and alloys obtained by appropriately combining these metals can be used.

[0285] As the conductive layer 152, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, a conductive oxide containing any one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon is preferably used. In particular, indium tin oxide containing silicon has a large work function, for example, 4.0 eV or more, and can be preferably used as the conductive layer 152.

[0286] Each of the conductive layer 151 and the conductive layer 152 may have a stacked-layer structure including a plurality of layers of different materials. In this case, the conductive layer 151 may include a layer using a material that can be used for the conductive layer 152, such as a conductive oxide, and the conductive layer 152 may include a layer using a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked-layer structure of two or more layers, the layer in contact with the conductive layer 152 may be a layer using a material that can be used for the conductive layer 152.

[0287] The end of the conductive layer 151 preferably has a tapered shape. Specifically, the end of the conductive layer 151 preferably has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side of the conductive layer 151 also has a tapered shape. By making the end of the conductive layer 152 have a tapered shape, the coverage of the organic compound layer 103 provided along the side of the conductive layer 152 can be improved.

[0288] Figure 4A 1 is a diagram when the conductive layer 151 has a stacked structure of a plurality of layers including different materials. Figure 4A As shown, the conductive layer 151 includes a conductive layer 151a, a conductive layer 151b on the conductive layer 151a, and a conductive layer 151c on the conductive layer 151b. That is, Figure 4A The conductive layer 151 shown has a three-layer stacked structure. In this way, when the conductive layer 151 has a multi-layer stacked structure, the visible light reflectance of at least one of the layers constituting the conductive layer 151 may be higher than the visible light reflectance of the conductive layer 152 .

[0289] exist Figure 4AIn the example shown, the conductive layer 151b is sandwiched between the conductive layer 151a and the conductive layer 151c. The conductive layer 151a and the conductive layer 151c can use a material that is less likely to deteriorate than the conductive layer 151b. For example, the conductive layer 151a can use a material that is less likely to migrate due to contact with the insulating layer 175 than the conductive layer 151b. In addition, the conductive layer 151c can use a material that is less likely to be oxidized than the conductive layer 151b and whose oxide has a lower resistivity than the oxide of the material used for the conductive layer 151b.

[0290] In this way, by adopting a structure in which the conductive layer 151b is sandwiched between the conductive layer 151a and the conductive layer 151c, the range of choices for the material of the conductive layer 151b can be expanded. Thus, for example, the conductive layer 151b can be made into a layer whose visible light reflectance is higher than that of at least one of the conductive layer 151a and the conductive layer 151c. For example, aluminum can be used as the conductive layer 151b. In addition, an alloy containing aluminum can also be used as the conductive layer 151b. In addition, titanium can be used as the conductive layer 151a. Although titanium has a lower visible light reflectance than aluminum, it is less likely to migrate than aluminum even when it contacts the insulating layer 175. In addition, titanium can be used as the conductive layer 151c. Although titanium has a lower visible light reflectance than aluminum, it is less likely to be oxidized than aluminum and the resistivity of oxide is lower than that of aluminum oxide.

[0291] In addition, silver or an alloy containing silver may be used as the conductive layer 151c. Silver has the characteristic of having a higher visible light reflectivity than titanium. Furthermore, silver is less easily oxidized than aluminum, and the resistivity of silver oxide is lower than that of aluminum oxide. Therefore, when silver or an alloy containing silver is used as the conductive layer 151c, the visible light reflectivity of the conductive layer 151 can be appropriately improved while suppressing the increase in resistance of the pixel electrode caused by the oxidation of the conductive layer 151b. Here, as the silver-containing alloy, for example, an alloy of silver, palladium and copper (Ag-Pd-Cu, also referred to as APC) can be used. In addition, when silver or an alloy containing silver is used as the conductive layer 151c and aluminum is used as the conductive layer 151b, the visible light reflectivity of the conductive layer 151c can be improved compared to the visible light reflectivity of the conductive layer 151b. Here, silver or an alloy containing silver may also be used as the conductive layer 151b. In addition, silver or an alloy containing silver may also be used as the conductive layer 151a.

[0292] On the other hand, a film made of titanium has better etching processability than a film made of silver. Therefore, by using titanium as the conductive layer 151c, the conductive layer 151c can be easily formed. In addition, a film made of aluminum also has better etching processability than a film made of silver.

[0293] By making the conductive layer 151 have a stacked structure of a plurality of layers in this manner, the characteristics of the display device can be improved. For example, the display device 100 can be made to have high light extraction efficiency and high reliability.

[0294] Here, when the light emitting device 130 adopts a microcavity structure, by using silver or an alloy containing silver, which is a material with high visible light reflectivity, as the conductive layer 151 c , the light extraction efficiency of the display device 100 can be appropriately improved.

[0295] As described above, the side surface of the conductive layer 151 preferably has a tapered shape. Specifically, the side surface of the conductive layer 151 preferably has a tapered shape with a taper angle less than 90°. Figure 4A In the conductive layer 151 having the structure shown, it is preferable that the side surface of at least any one of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c has a tapered shape.

[0296] Figure 4A The conductive layer 151 shown can be formed by lithography. Specifically, first, a conductive film to become the conductive layer 151a, a conductive film to become the conductive layer 151b, and a conductive film to become the conductive layer 151c are deposited in sequence. Next, a resist mask is formed on the conductive film to become the conductive layer 151c. Then, the conductive film in the area that does not overlap with the resist mask is removed, for example, by etching. Here, by processing the conductive film under conditions in which the resist mask is easier to retreat (shrink) than in the case where the conductive layer 151 is formed in a manner in which the side does not have a tapered shape, that is, the side is vertical, a conductive layer 151 having a tapered shape on the side can be formed.

[0297] Here, when the conductive film is processed under the condition that the resist mask easily retreats (shrinks), the conductive film may be easily processed in the horizontal direction. In other words, the isotropy of etching may become higher than when the conductive layer 151 is formed so that the side surface is vertical.

[0298] When the conductive layer 151 has a stacked structure of a plurality of layers made of different materials, the plurality of layers may have different eases of processing in the horizontal direction. For example, the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c may have different eases of processing in the horizontal direction.

[0299] In this case, sometimes after processing the conductive film, Figure 4A As shown, the side surface of the conductive layer 151b is located inside the side surfaces of the conductive layer 151a and the conductive layer 151c to form a protrusion. This may reduce the coverage of the conductive layer 152 with respect to the conductive layer 151 and cause disconnection of the conductive layer 152.

[0300] In view of this, it is preferred that Figure 4AThe insulating layer 156 is provided in this manner. Figure 4A An example is shown in which insulating layer 156 is provided on conductive layer 151a so as to have a region overlapping with the side surface of conductive layer 151b. This can suppress disconnection or thinning of conductive layer 152 due to the protrusion, thereby suppressing poor connection and increase in driving voltage.

[0301] Note that although Figure 4A Although the structure in which the entire side surface of the conductive layer 151b is covered by the insulating layer 156 is shown, a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156. Similarly, in the pixel electrode having the structure shown below, a part of the side surface of the conductive layer 151b may not be covered by the insulating layer 156.

[0302] The conductive layer 151 has Figure 4A In the structure shown in the figure, the conductive layer 152 covers the conductive layer 151a, the conductive layer 151b, the conductive layer 151c and the insulating layer 156 and is electrically connected to the conductive layer 151a, the conductive layer 151b and the conductive layer 151c. Therefore, when removing a film deposited after the conductive layer 152 is formed by a wet etching method, for example, the chemical solution does not need to contact the conductive layer 151a, the conductive layer 151b and the conductive layer 151c. Therefore, corrosion in the conductive layer 151a, the conductive layer 151b and the conductive layer 151c can be suppressed. Therefore, the display device 100 can be manufactured by a method with a high yield. In addition, the occurrence of defects can be suppressed, thereby realizing a display device 100 with high reliability.

[0303] Here, if Figure 4A As shown, the insulating layer 156 preferably has a curved surface. Thus, for example, compared with a case where the side surface of the insulating layer 156 is perpendicular (parallel to the Z direction), the occurrence of disconnection in the conductive layer 152 covering the insulating layer 156 can be suppressed. In addition, when the side surface of the insulating layer 156 has a tapered shape, specifically a tapered shape with a taper angle of less than 90°, for example, compared with a case where the side surface of the insulating layer 156 is perpendicular, the occurrence of disconnection in the conductive layer 152 covering the insulating layer 156 can be suppressed. Thus, the display device 100 can be manufactured by a method with a high yield. In addition, the occurrence of defects is suppressed, and the display device 100 can be made into a display device with high reliability.

[0304] Notice, Figure 4A Although the structure in which the side surface of the conductive layer 151b is located inside the side surface of the conductive layer 151a and the side surface of the conductive layer 151c is shown, one embodiment of the present invention is not limited to this. For example, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151a. In addition, the side surface of the conductive layer 151b may be located outside the side surface of the conductive layer 151c.

[0305] FIG. 4B to FIG. 4D Other structures of the first electrode 101 are shown. Figure 4B Shown in Figure 4A In the first electrode 101, the insulating layer 156 covers the side surfaces of the conductive layer 151a, the conductive layer 151b, and the conductive layer 151c in addition to the side surfaces of the conductive layer 151b.

[0306] Figure 4C Shown in Figure 4A The insulating layer 156 is not provided in the first electrode 101.

[0307] Figure 4D The following structure is shown: Figure 4A In the first electrode 101, the conductive layer 151 does not have a stacked-layer structure and the conductive layer 152 has a stacked-layer structure.

[0308] The conductive layer 152a is a layer having a higher adhesion to the conductive layer 152b than the insulating layer 175, for example. As the conductive layer 152a, for example, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used. For example, it is preferable to use a conductive oxide containing any one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. Thus, film peeling of the conductive layer 152b can be suppressed. In addition, the conductive layer 152b can be prevented from contacting the insulating layer 175.

[0309] The conductive layer 152b is a layer with a higher visible light reflectivity (for example, reflectivity for light of a specified wavelength in the range of 400 nm to less than 750 nm) than the conductive layer 151, the conductive layer 152a, and the conductive layer 152c. The visible light reflectivity of the conductive layer 152b can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%. In addition, as the conductive layer 152b, for example, a material having a higher visible light reflectivity than aluminum can be used. Specifically, for example, silver or an alloy containing silver can be used as the conductive layer 152b. As an example of an alloy containing silver, an alloy of silver, palladium, and copper (APC) can be cited. As a result, the display device 100 can be made into a display device with high light extraction efficiency. Note that a metal other than silver can also be used as the conductive layer 152b.

[0310] When the conductive layer 151 and the conductive layer 152 are used as an anode, the conductive layer 152c is preferably a layer having a large work function. The conductive layer 152c is, for example, a layer having a larger work function than the conductive layer 152b. As the conductive layer 152c, for example, the same material as that which can be used for the conductive layer 152a can be used. For example, the same material can be used for the conductive layer 152a and the conductive layer 152c. For example, when indium tin oxide is used for the conductive layer 152a, indium tin oxide can also be used for the conductive layer 152c.

[0311] Note that when the conductive layer 151 and the conductive layer 152 are used as a cathode, the conductive layer 152c is preferably a layer with a small work function. For example, the conductive layer 152c is a layer with a smaller work function than the conductive layer 152b.

[0312] In addition, the conductive layer 152c is preferably a layer with high visible light transmittance (for example, transmittance to light of a specified wavelength in the range of greater than 400 nm and less than 750 nm). For example, the visible light transmittance of the conductive layer 152c is preferably higher than the visible light transmittance of the conductive layer 151 and the conductive layer 152b. For example, the visible light transmittance of the conductive layer 152c can be greater than 60% and less than 100%, preferably greater than 70% and less than 100%, and more preferably greater than 80% and less than 100%. Thereby, the light absorbed by the conductive layer 152c in the light emitted by the organic compound layer 103 can be reduced. In addition, as described above, the conductive layer 152b under the conductive layer 152c can be a layer with high visible light reflectance. Therefore, the display device 100 can be made into a display device with high light extraction efficiency.

[0313] Next, refer to FIG. 8A to FIG. 13D Description Figure 3A An example of a method for manufacturing a display device 100 having a structure shown in FIG. The organic compound layer of the light-emitting device included in the display device 100 is formed by a manufacturing process including treatment with water. By using the organic compound of one embodiment of the present invention in the organic compound layer of the light-emitting device included in the display device of one embodiment of the present invention, even if the organic compound is manufactured by a manufacturing method including treatment with water, it is possible to prevent problems such as dissolution of the layer containing the organic compound and penetration of a chemical solution into the layer using the organic compound, thereby providing a light-emitting device with good characteristics.

[0314] [Manufacturing method example] The thin film (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by sputtering, chemical vapor deposition (CVD: Chemical Vapor Deposition) method, vacuum evaporation method, pulsed laser deposition (PLD: Pulsed Laser Deposition) method or ALD method, etc. As CVD methods, there are plasma enhanced chemical vapor deposition (PECVD: Plasma Enhanced CVD) method and thermal CVD method, etc. In addition, as one of the thermal CVD methods, there is metal organic chemical vapor deposition (MOCVD: Metal Organic CVD) method.

[0315] In addition, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed using a wet deposition method such as spin coating, dipping, spraying, inkjet, dispenser, screen printing, offset printing, doctor knife, slit coating, roller coating, curtain coating or doctor knife coating.

[0316] In particular, when manufacturing a light-emitting device, a vacuum process such as evaporation and a solution process such as spin coating and inkjet can be used. As an evaporation method, physical evaporation methods (PVD methods) such as sputtering, ion plating, ion beam evaporation, molecular beam evaporation, vacuum evaporation, and chemical vapor deposition (CVD methods) can be cited. In particular, the functional layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, and electron injection layer, etc.) included in the organic compound layer can be formed by methods such as evaporation (vacuum evaporation, etc.), coating (dip coating, dye coating, rod coating, spin coating, spray coating), printing (inkjet, screen printing (porcelain printing), offset printing (lithography), flexographic printing (relief printing), gravure printing, or micro-contact printing, etc.).

[0317] In addition, when processing the thin film constituting the display device, for example, lithography can be used for processing. Alternatively, the thin film can also be processed by nanoimprinting, sandblasting, lift-off, etc. In addition, an island-shaped thin film can also be directly formed by a deposition method using a shielding mask such as a metal mask.

[0318] As a lithography technique, for example, photolithography can be used. There are two typical photolithography methods. One is a method of forming a resist mask on a thin film to be processed, processing the thin film by, for example, etching, and removing the resist mask. The other is a method of forming a photosensitive thin film, exposing and developing it, and processing the thin film into a desired shape.

[0319] In the photolithography method, as the light used for exposure, for example, i-line (wavelength of 365nm), g-line (wavelength of 436nm), h-line (wavelength of 405nm) or a mixture of these lights can be used. In addition, ultraviolet light, KrF laser or ArF laser, etc. can also be used. In addition, liquid immersion exposure technology can also be used for exposure. In addition, as the light used for exposure, extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays can also be used. In addition, instead of the light used for exposure, an electron beam can also be used. When extreme ultraviolet light, X-rays or electron beams are used, extremely fine processing can be performed, so it is preferred. In addition, when exposure is performed by scanning a light beam such as an electron beam, a photomask is not required.

[0320] For etching of the thin film, dry etching, wet etching, sand blasting, or the like can be used.

[0321] First, if Figure 5A As shown, an insulating layer 171 is formed on a substrate (not shown). Then, a conductive layer 172 and a conductive layer 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 to cover the conductive layer 172 and the conductive layer 179. Then, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0322] As the substrate, a substrate having heat resistance at least enough to withstand the subsequent heat treatment can be used. In the case of using an insulating substrate as the substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate can be used. In addition, a semiconductor substrate such as a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate made of silicon germanium, or an SOI substrate can also be used.

[0323] Then, if Figure 5A As shown in FIG. 1 , openings reaching the conductive layer 172 are formed in the insulating layer 175, the insulating layer 174, and the insulating layer 173. Next, the plug 176 is formed so as to be embedded in the opening.

[0324] Then, if Figure 5A As shown, a conductive film 151f, which will later become the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, and the conductive layer 151C, is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed by, for example, sputtering or vacuum deposition. In addition, as the conductive film 151f, for example, a metal material can be used.

[0325] Then, if Figure 5AAs shown in FIG. 1 , a resist mask 191 is formed on the conductive film 151f. The resist mask 191 can be formed by applying a photosensitive material (photoresist), exposing it to light, and developing it.

[0326] Then, if Figure 5B As shown, for example, the conductive film 151f in the region that does not overlap with the resist mask 191 is removed by etching, specifically, by dry etching. Note that when the conductive film 151f includes a layer made of a conductive oxide such as indium tin oxide, the layer may be removed by wet etching. Thus, the conductive layer 151 is formed. Note that, for example, when a portion of the conductive film 151f is removed by dry etching, a recessed portion may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0327] Then, if Figure 5C As shown, the resist mask 191 is removed. The resist mask 191 can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3 or Group 18 elements such as He can also be used. Alternatively, the resist mask 191 can also be removed by wet etching.

[0328] Then, if Figure 5D As shown in FIG. 1 , an insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on the conductive layers 151R, 151G, 151B, 151C, and the insulating layer 175. The insulating film 156f can be formed by, for example, CVD, ALD, sputtering, or vacuum evaporation.

[0329] The insulating film 156f may be made of an inorganic material. As the insulating film 156f, for example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film may be used. For example, as the insulating film 156f, an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film containing silicon may be used. For example, as the insulating film 156f, silicon oxynitride may be used.

[0330] Then, if Figure 5E As shown, the insulating film 156f is processed to form the insulating layer 156R, the insulating layer 156G, the insulating layer 156B and the insulating layer 156C. For example, the top surface of the insulating film 156f is etched roughly uniformly, thereby forming the insulating layer 156. Such a process of etching uniformly to flatten is also called an etch-back process. Alternatively, the insulating layer 156 may be formed using a lithography technique.

[0331] Then, if Fig. 6AAs shown in FIG. 1 , a conductive film 152f, which will later become the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C, is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the insulating layer 156C, and the insulating layer 175. Specifically, for example, the conductive film 152f is formed so as to cover the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C.

[0332] The conductive film 152f can be formed by, for example, a sputtering method or a vacuum evaporation method. In addition, as the conductive film 152f, for example, a conductive oxide can be used. Alternatively, as the conductive film 152f, a laminated structure of a film using a metal material and a film using a conductive oxide on the film can be used. For example, as the conductive film 152f, a laminated structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide on the film can be used.

[0333] In addition, the conductive film 152f can be formed using the ALD method. Here, as the conductive film 152f, an oxide containing any one or more selected from indium, tin, zinc, gallium, titanium, aluminum and silicon can be used. At this time, by introducing a precursor (generally sometimes referred to as a precursor or a metal precursor, etc.), purging the precursor, introducing an oxidant (generally sometimes referred to as a reactant, reactant or non-metal precursor, etc.) and purging the oxidant as one cycle, the conductive film 152f can be formed by repeating the cycle. Here, when an oxide film containing multiple metals such as indium tin oxide is formed as the conductive film 152f, the metal composition can be controlled by changing the number of cycles according to the type of precursor.

[0334] For example, when an indium tin oxide film is deposited as the conductive film 152f, an In-O film is formed by introducing a precursor containing indium, purging the precursor, and introducing an oxidant, and then a Sn-O film is formed by introducing a precursor containing tin, purging the precursor, and introducing an oxidant. Here, by making the number of cycles when forming the In-O film greater than the number of cycles when forming the Sn-O film, the number of In atoms contained in the conductive film 152f can be greater than the number of Sn atoms.

[0335] In addition, for example, in the case where a zinc oxide film is deposited as the conductive film 152f, a Zn-O film is formed by the above process. In addition, for example, in the case where an aluminum zinc oxide film is deposited as the conductive film 152f, a Zn-O film and an Al-O film are formed by the above process. In addition, for example, in the case where a titanium oxide film is deposited as the conductive film 152f, a Ti-O film is formed by the above process. In addition, for example, in the case where an indium tin oxide film containing silicon is deposited as the conductive film 152f, an In-O film, a Sn-O film, and a Si-O film are formed by the above process. In addition, for example, in the case where a zinc oxide film containing gallium is deposited, a Ga-O film and a Zn-O film are formed by the above process.

[0336] As a precursor containing indium, for example, triethylindium, trimethylindium or [1,1,1-trimethyl-N-(trimethylsilyl)amide]-indium can be used. As a precursor containing tin, for example, tin chloride or tetrakis(dimethylamide)tin can be used. As a precursor containing zinc, for example, diethylzinc or dimethylzinc can be used. As a precursor containing gallium, for example, triethylgallium can be used. As a precursor containing titanium, for example, titanium chloride, tetrakis(dimethylamide)titanium or tetraisopropyl titanate can be used. As a precursor containing aluminum, for example, aluminum chloride or trimethylaluminum can be used. As a precursor containing silicon, for example, trisilylamine, bis(diethylamino)silane, tris(dimethylamino)silane, bis(tert-butylamino)silane or bis(ethylmethylamino)silane can be used. In addition, as an oxidant, water vapor, oxygen plasma or ozone gas can be used.

[0337] Then, if Figure 6B As shown, the conductive film 152f is processed by, for example, lithography technology, thereby forming a conductive layer 152R, a conductive layer 152G, a conductive layer 152B, and a conductive layer 152C. Specifically, for example, after forming a resist mask, a portion of the conductive film 152f is removed by etching. For example, the conductive film 152f can be removed by wet etching. Note that the conductive film 152f can also be removed by dry etching. Thus, a pixel electrode including the conductive layer 151 and the conductive layer 152 is formed.

[0338] Next, the conductive layer 152 is preferably subjected to a hydrophobic treatment. Through the hydrophobic treatment, the surface state of the treatment object can be changed from hydrophilic to hydrophobic, or the hydrophobicity of the surface of the treatment object can be improved. By performing the hydrophobic treatment on the conductive layer 152, the adhesion between the conductive layer 152 and the organic compound layer 103 to be formed in the subsequent process can be improved to suppress film peeling. Note that the hydrophobic treatment may not be performed.

[0339] Then, if Figure 6CAs shown in FIG. 1 , an organic compound film 103Rf which will later become the organic compound layer 103R is formed over the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175 .

[0340] like Figure 6C As shown, the organic compound film 103Rf is not formed on the conductive layer 152C. For example, by using a mask for defining a deposition range (also referred to as an area mask or a rough metal mask, etc., to distinguish it from a high-definition metal mask), the organic compound film 103Rf can be deposited only in a desired area. By adopting a deposition process using an area mask and a processing process using a resist mask, a light-emitting device can be manufactured with a relatively simple process.

[0341] The organic compound film 103Rf can be formed by, for example, a vapor deposition method, specifically, a vacuum vapor deposition method. Alternatively, the organic compound film 103Rf can be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0342] Then, if Figure 6C As shown, a sacrificial film 158Rf to be a sacrificial layer 158R later and a mask film 159Rf to be a mask layer 159R later are sequentially formed on the organic compound film 103Rf, the conductive layer 152C, and the insulating layer 175. Note that in this specification and the like, a mask layer may be referred to as a sacrificial layer.

[0343] Note that in this embodiment, an example is shown in which the mask film has a two-layer structure of the sacrificial film 158Rf and the mask film 159Rf, but the mask film may have a single-layer structure or a stacked-layer structure of three or more layers.

[0344] By providing a sacrificial layer on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0345] The sacrificial film 158Rf is a film having high resistance to the processing conditions of the organic compound film 103Rf, specifically, a film having a large etching selectivity ratio with the organic compound film 103Rf. The mask film 159Rf is a film having a large etching selectivity ratio with the sacrificial film 158Rf.

[0346] In addition, the sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat resistance temperature of the organic compound film 103Rf. The substrate temperature when forming the sacrificial film 158Rf and the sacrificial film 159Rf is typically 200° C. or less, preferably 150° C. or less, more preferably 120° C. or less, further preferably 100° C. or less, and further preferably 80° C. or less.

[0347] The sacrificial film 158Rf and the mask film 159Rf are preferably films that can be removed by wet etching. By using wet etching, damage to the organic compound film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the case of using dry etching.

[0348] The sacrificial film 158Rf and the mask film 159Rf can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. Alternatively, they can be formed by the wet deposition method described above.

[0349] The sacrificial film 158Rf formed on and in contact with the organic compound film 103Rf is preferably formed by a formation method that causes less damage to the organic compound film 103Rf than when the mask film 159Rf is formed. For example, the sacrificial film 158Rf is preferably formed by ALD or vacuum evaporation rather than sputtering.

[0350] As the sacrificial film 158Rf and the mask film 159Rf, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, and an inorganic insulating film can be used.

[0351] As the sacrificial film 158Rf and the mask film 159Rf, for example, metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing the metal materials can be used. In particular, low melting point materials such as aluminum and silver are preferably used. By using a metal material that can shield ultraviolet rays as one or both of the sacrificial film 158Rf and the mask film 159Rf, it is possible to suppress ultraviolet rays from irradiating the organic compound film 103Rf and suppress the degradation of the organic compound film 103Rf, which is preferred.

[0352] In addition, as the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide) or indium tin oxide containing silicon can be used respectively.

[0353] Note that element M (M is one or more of aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used instead of the above-mentioned gallium.

[0354] In addition, as the sacrificial film and the mask film, a film containing a material having light-shielding properties, especially ultraviolet rays, is preferably used. As the material having light-shielding properties, various materials such as metals, insulators, semiconductors, and semimetals having ultraviolet light-shielding properties can be used. Since part or all of the sacrificial film and the mask film will be removed in the subsequent process, the sacrificial film and the mask film are preferably films that can be processed by etching, and are particularly preferably films with good processability.

[0355] When semiconductor materials such as silicon or germanium are used as sacrificial films and mask films, the materials have high affinity with the semiconductor manufacturing process and are therefore preferred. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, non-metallic materials such as carbon or their compounds can be used. In addition, metals such as titanium, tantalum, tungsten, chromium, and aluminum or alloys containing one or more of them can be cited. In addition, oxides containing the above metals such as titanium oxide or chromium oxide or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0356] In addition, by using a film containing a material having ultraviolet light shielding properties as a sacrificial film or a mask film, it is possible to prevent ultraviolet rays from irradiating the organic compound layer during, for example, an exposure process. By preventing ultraviolet rays from damaging the organic compound layer, the reliability of the light-emitting device can be improved.

[0357] Note that a film including a material having ultraviolet light shielding properties also exhibits the same effect when used as a material for an inorganic insulating film 125f described later.

[0358] In addition, various inorganic insulating films can be used as the sacrificial film 158Rf and the mask film 159Rf. In particular, the oxide insulating film has a higher adhesion to the organic compound film 103Rf than the nitride insulating film, so it is preferred. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide or silicon oxide can be used for the sacrificial film 158Rf and the mask film 159Rf. As the sacrificial film 158Rf and the mask film 159Rf, for example, an aluminum oxide film can be formed by the ALD method. By using the ALD method, the damage to the substrate (especially the organic compound layer) can be reduced, so it is preferred.

[0359] For example, an inorganic insulating film (e.g., an aluminum oxide film) formed using an ALD method can be used as the sacrificial film 158Rf, and an inorganic film (e.g., an In—Ga—Zn oxide film, an aluminum film, or a tungsten film) formed using a sputtering method can be used as the mask film 159Rf.

[0360] In addition, the same inorganic insulating film can be used for both the sacrificial layer 158Rf and the inorganic insulating layer 125 to be formed later. For example, an aluminum oxide film formed using the ALD method can be used for both the sacrificial layer 158Rf and the inorganic insulating layer 125. Here, the sacrificial layer 158Rf and the inorganic insulating layer 125 can be deposited under the same deposition conditions or different deposition conditions. For example, by depositing the sacrificial film 158Rf under the same conditions as the inorganic insulating layer 125, the sacrificial film 158Rf can be formed as an insulating layer with high barrier properties to at least one of water and oxygen. On the other hand, the sacrificial film 158Rf is a layer that will be mostly or entirely removed in a subsequent process, so it is preferably easy to process. Therefore, the sacrificial layer 158Rf is preferably deposited under conditions where the substrate temperature is lower than that of the inorganic insulating layer 125 during deposition.

[0361] An organic material may be used as one or both of the sacrificial film 158Rf and the mask film 159Rf. For example, as the organic material, a material that is soluble in a solvent that is chemically stable to at least the film located at the uppermost portion of the organic compound film 103Rf may be used. In particular, a material that is soluble in water or alcohol may be used appropriately. When depositing the above-mentioned material, it is preferred that the material is applied by a wet deposition method in a state where the material is dissolved in a solvent such as water or alcohol, and then a heat treatment is performed to evaporate the solvent. At this time, it is preferred to perform the heat treatment in a reduced pressure atmosphere, thereby removing the solvent at a low temperature and in a short time, and reducing the thermal damage to the organic compound film 103Rf.

[0362] The sacrificial film 158Rf and the mask film 159Rf may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or fluororesin such as perfluoropolymer.

[0363] For example, an organic film (eg, a PVA film) formed by any of the evaporation method and the above-described wet deposition method may be used as the sacrificial film 158Rf, and an inorganic film (eg, a silicon nitride film) formed by sputtering may be used as the mask film 159Rf.

[0364] Then, if Figure 6C As shown in FIG. 1 , a resist mask 190R is formed on the mask film 159Rf. The resist mask 190R can be formed by applying a photosensitive resin (photoresist), exposing it to light, and developing it.

[0365] The resist mask 190R may use a positive resist material or a negative resist material.

[0366] The resist mask 190R is provided at a position overlapping with the conductive layer 152R. The resist mask 190R is preferably also provided at a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the display device. Note that the resist mask 190R may not be provided on the conductive layer 152C. Figure 6C As shown in the cross-sectional view taken along B1 - B2 in FIG. 1 , the resist mask 190R is preferably provided so as to cover from the end of the organic compound film 103Rf to the end of the conductive layer 152C (the end on the organic compound film 103Rf side).

[0367] Then, if Fig.6D As shown, a portion of the mask film 159Rf is removed using the resist mask 190R to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. Then, the resist mask 190R is removed. Next, a portion of the sacrificial film 158Rf is removed using the mask layer 159R as a mask (also referred to as a hard mask) to form a sacrificial layer 158R.

[0368] The sacrificial film 158Rf and the mask film 159Rf can be processed by wet etching or dry etching, respectively. The sacrificial film 158Rf and the mask film 159Rf are preferably processed by isotropic etching.

[0369] By using the wet etching method, the damage to the organic compound film 103Rf during the processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to the case of using the dry etching method. When the wet etching method is used, for example, a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed liquid thereof is preferably used.

[0370] Since the organic compound film 103Rf is not exposed when processing the mask film 159Rf, the range of processing methods is wider than when processing the sacrificial film 158Rf. Specifically, when processing the mask film 159Rf, even if an oxygen-containing gas is used as an etching gas, degradation of the organic compound film 103Rf can be suppressed.

[0371] In addition, when dry etching is used in processing the sacrificial film 158Rf, degradation of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as an etching gas. In the case of dry etching, for example, a gas containing CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3 or a Group 18 element such as He is preferably used as an etching gas.

[0372] For example, when an aluminum oxide film formed by an ALD method is used as the sacrificial film 158Rf, a portion of the sacrificial film 158Rf can be removed by dry etching using CHF3 and He or CHF3, He and CH4. In addition, when an In-Ga-Zn oxide film formed by a sputtering method is used as the mask film 159Rf, a portion of the mask film 159Rf can be removed by a wet etching method using dilute phosphoric acid. Alternatively, a portion of the mask film 159Rf can be removed by dry etching using CH4 and Ar. Alternatively, a portion of the mask film 159Rf can be removed by wet etching using dilute phosphoric acid. In addition, when a tungsten film formed by a sputtering method is used as the mask film 159Rf, a portion of the mask film 159Rf can be removed by dry etching using SF6, CF4 and O2 or CF4, Cl2 and O2.

[0373] The resist mask 190R can be removed by the same method as the resist mask 191. The resist mask 190R can be removed, for example, by ashing using oxygen plasma. Alternatively, oxygen gas and CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3 or Group 18 elements such as He can be used. Alternatively, the resist mask 190R can be removed by wet etching. At this time, the sacrificial film 158Rf is located at the uppermost surface and the organic compound film 103Rf is not exposed, so that the organic compound film 103Rf can be prevented from being damaged in the removal process of the resist mask 190R. In addition, the range of selection of the removal method of the resist mask 190R can be expanded.

[0374] Then, if Fig.6D As shown, the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the organic compound layer 103R is formed by removing a portion of the organic compound film 103Rf using the mask layer 159R and the sacrifice layer 158R as a hard mask.

[0375] Therefore, if Fig.6D As shown in FIG. 1 , the stacked structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. In addition, the conductive layer 152G and the conductive layer 152B are exposed.

[0376] Fig.6D 103R is located outside the end of the conductive layer 152R. By adopting this structure, the pixel aperture ratio can be improved. Fig.6D Although not shown in the figure, a recessed portion may be formed in a region of the insulating layer 175 that does not overlap with the organic compound layer 103R due to the etching process described above.

[0377] In addition, since the organic compound layer 103R covers the top surface and the side surface of the conductive layer 152R, the subsequent process can be performed in a manner that does not expose the conductive layer 152R. When the end of the conductive layer 152R is exposed, corrosion may occur in an etching process, for example. The product caused by the corrosion of the conductive layer 152R is sometimes unstable. For example, the product may be dissolved in a solution in wet etching, and the product may be scattered in the atmosphere in dry etching. When the product is dissolved in a solution or scattered in the atmosphere, for example, the product may adhere to the processed surface and the side surface of the organic compound layer 103R, etc., and have an adverse effect on the characteristics of the light-emitting device or may cause a leakage path to be formed between multiple light-emitting devices. In addition, in the region where the end of the conductive layer 152R is exposed, the adhesion of the layers in contact with each other may be reduced, and film peeling of the organic compound layer 103R or the conductive layer 152R may be easily caused.

[0378] Therefore, by adopting a structure in which the organic compound layer 103R covers the top surface and the side surfaces of the conductive layer 152R, for example, the yield and characteristics of the light-emitting device can be improved.

[0379] As described above, the resist mask 190R is preferably provided so as to cover from the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on the organic compound layer 103R side) between the dashed line B1-B2. Fig.6D As shown, the sacrificial layer 158R and the mask layer 159R are provided between the dot-dash line B1-B2 in a manner covering the end of the organic compound layer 103R to the end of the conductive layer 152C (the end on one side of the organic compound layer 103R). Therefore, for example, the insulating layer 175 can be suppressed from being exposed between the dot-dash line B1-B2. Thus, the insulating layer 175, the insulating layer 174, and a portion of the insulating layer 173 can be prevented from being removed by etching or the like, resulting in the conductive layer 179 being exposed. Therefore, the conductive layer 179 can be suppressed from being unintentionally electrically connected to other conductive layers. For example, a short circuit between the conductive layer 179 and the common electrode 155 to be formed in a later process can be suppressed.

[0380] The organic compound film 103Rf is preferably processed by anisotropic etching. Anisotropic dry etching is particularly preferred. Alternatively, wet etching may be used.

[0381] When the dry etching method is used, by not using an oxygen-containing gas as an etching gas, degradation of the organic compound film 103Rf can be suppressed.

[0382] In addition, an oxygen-containing gas may be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficient etching rate. Therefore, damage to the organic compound film 103Rf can be suppressed. In addition, defects such as adhesion of reaction products generated during etching can be suppressed.

[0383] When using the dry etching method, for example, it is preferred to use a gas containing H2, CF4, C4F8, SF6, CHF3, Cl2, H2O, BCl3 and one or more of the 18th group elements such as He or Ar as the etching gas. Alternatively, it is preferred to use a gas containing one or more of the above gases and oxygen as the etching gas. Alternatively, oxygen gas can also be used as the etching gas. Specifically, for example, a gas containing H2 and Ar or a gas containing CF4 and He can be used as the etching gas. In addition, for example, a gas containing CF4, He and oxygen can be used as the etching gas. In addition, for example, a gas containing H2 and Ar and an oxygen-containing gas can be used as the etching gas.

[0384] As described above, in one embodiment of the present invention, the mask layer 159R is formed by forming the resist mask 190R on the mask film 159Rf and removing a portion of the mask film 159Rf using the resist mask 190R. Then, the organic compound layer 103R is formed by removing a portion of the organic compound film 103Rf using the mask layer 159R as a hard mask. Therefore, it can be said that the organic compound layer 103R is formed by processing the organic compound film 103Rf using the lithography technology. In addition, a portion of the organic compound film 103Rf may be removed using the resist mask 190R. Then, the resist mask 190R may also be removed.

[0385] Next, for example, the conductive layer 152G is preferably subjected to a hydrophobic treatment. When the organic compound film 103Rf is processed, for example, the surface state of the conductive layer 152G sometimes becomes hydrophilic. By performing a hydrophobic treatment on the conductive layer 152G, for example, the adhesion between the conductive layer 152G and a layer to be formed in a subsequent process (here, the organic compound layer 103G) can be improved to suppress film peeling. Note that the hydrophobic treatment may not be performed.

[0386] Then, if Fig. 7A As shown in FIG. 1 , an organic compound film 103Gf which will later become the organic compound layer 103G is formed over the conductive layer 152G, the conductive layer 152B, the mask layer 159R, and the insulating layer 175 .

[0387] The organic compound film 103Gf can be formed by the same method as that used in forming the organic compound film 103Rf. In addition, the organic compound film 103Gf can have the same structure as that of the organic compound film 103Rf.

[0388] Then, if Fig. 7A As shown, a sacrificial film 158Gf, which will later become a sacrificial layer 158G, and a mask film 159Gf, which will later become a mask layer 159G, are sequentially formed on the organic compound film 103Gf and the mask layer 159R. Then, a resist mask 190G is formed. The materials and forming methods of the sacrificial film 158Gf and the mask film 159Gf are the same as those that can be applied to the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190G are the same as those that can be applied to the resist mask 190R.

[0389] The resist mask 190G is provided at a position overlapping with the conductive layer 152G.

[0390] Then, if Figure 7B As shown, a portion of the mask film 159Gf is removed using the resist mask 190G to form the mask layer 159G. The mask layer 159G remains on the conductive layer 152G. Then, the resist mask 190G is removed. Next, a portion of the sacrificial film 158Gf is removed using the mask layer 159G as a mask to form the sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form the organic compound layer 103G. For example, a portion of the organic compound film 103Gf is removed using the mask layer 159G and the sacrificial layer 158G as a hard mask to form the organic compound layer 103G.

[0391] Therefore, if Figure 7B As shown in FIG. 1 , a stacked structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G. In addition, the mask layer 159R and the conductive layer 152B are exposed.

[0392] Next, for example, the conductive layer 152B is preferably subjected to a hydrophobic treatment. When processing the organic compound film 103Gf, for example, the surface state of the conductive layer 152B sometimes becomes hydrophilic. By conducting a hydrophobic treatment on the conductive layer 152B, for example, the adhesion between the conductive layer 152B and a layer to be formed in a subsequent process (here, the organic compound layer 103B) can be improved to suppress film peeling. Note that the hydrophobic treatment may not be performed.

[0393] Then, if Figure 7C As shown in FIG. 1 , an organic compound film 103Bf which will later become the organic compound layer 103B is formed over the conductive layer 152B, the mask layer 159R, the mask layer 159G, and the insulating layer 175 .

[0394] The organic compound film 103Bf can be formed by the same method as that used to form the organic compound film 103Rf. In addition, the organic compound film 103Bf can have the same structure as that of the organic compound film 103Rf.

[0395] Then, if Figure 7C As shown, a sacrificial film 158Bf, which will later become a sacrificial layer 158B, and a mask film 159Bf, which will later become a mask layer 159B, are sequentially formed on the organic compound film 103Bf and the mask layer 159R. Then, a resist mask 190B is formed. The materials and forming methods of the sacrificial film 158Bf and the mask film 159Bf are the same as those that can be applied to the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190B are the same as those that can be applied to the resist mask 190R.

[0396] The resist mask 190B is provided at a position overlapping with the conductive layer 152B.

[0397] Then, if Fig.7D As shown, a portion of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. The mask layer 159B remains on the conductive layer 152B. Then, the resist mask 190B is removed. Next, a portion of the sacrificial film 158Bf is removed using the mask layer 159B as a mask to form the sacrificial layer 158B. Next, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, a portion of the organic compound film 103Bf is removed using the mask layer 159B and the sacrificial layer 158B as a hard mask to form the organic compound layer 103B.

[0398] Therefore, if Fig.7D As shown in FIG. 1 , a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B. In addition, the mask layer 159R and the mask layer 159G are exposed.

[0399] Note that the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are each preferably perpendicular or substantially perpendicular to the formed surface. For example, the angle formed by the formed surface and these side surfaces is preferably not less than 60 degrees and not more than 90 degrees.

[0400] As described above, the distance between two adjacent organic compound layers in the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B formed using lithography technology can be reduced to less than 8 μm, less than 5 μm, less than 3 μm, less than 2 μm, or less than 1 μm. Here, for example, the distance can be specified according to the distance between the relative ends of two adjacent organic compound layers in the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In this way, by reducing the distance between the island-shaped organic compound layers, a display device with high clarity and a large aperture ratio can be provided. In addition, the distance between the first electrodes of adjacent light-emitting devices can also be reduced, for example, to less than 10 μm, less than 8 μm, less than 5 μm, less than 3 μm, or less than 2 μm. In addition, the distance between the first electrodes of adjacent light-emitting devices is preferably greater than 2 μm and less than 5 μm.

[0401] Then, if Fig. 8A As shown, it is preferred to remove the mask layer 159R, the mask layer 159G, and the mask layer 159B. Depending on the subsequent process, the sacrificial layer 158R, the sacrificial layer 158G, the sacrificial layer 158B, the mask layer 159R, the mask layer 159G, and the mask layer 159B may remain in the display device. By removing the mask layer 159R, the mask layer 159G, and the mask layer 159B at this stage, it is possible to suppress the mask layer 159R, the mask layer 159G, and the mask layer 159B from remaining in the display device. For example, in the case where a conductive material is used for the mask layer 159R, the mask layer 159G, and the mask layer 159B, by removing the mask layer 159R, the mask layer 159G, and the mask layer 159B in advance, it is possible to suppress the generation of leakage current and the formation of capacitance due to the remaining mask layer 159R, the mask layer 159G, and the mask layer 159B.

[0402] Note that, although the present embodiment describes the case where the mask layers 159R, 159G, and 159B are removed as an example, the mask layers 159R, 159G, and 159B may not be removed. For example, when the mask layers 159R, 159G, and 159B include the above-mentioned material having ultraviolet light shielding properties, it is preferable to proceed to the next step without removing the mask layers because the organic compound layer can be protected from ultraviolet rays.

[0403] The mask layer removal process can use the same method as the mask film processing process. By using the wet etching method, compared with the case of using the dry etching method, the damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B when removing the mask layer can be reduced.

[0404] Alternatively, the mask layer may be removed by dissolving it in a solvent such as water or alcohol. Examples of the alcohol include ethanol, methanol, isopropyl alcohol (IPA), and glycerin.

[0405] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B and water adsorbed on the surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. For example, a heat treatment may be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment may be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 120° C. The use of a reduced pressure atmosphere is preferred because drying can be performed at a lower temperature.

[0406] Then, if Figure 8B As shown, an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B.

[0407] As described later, an insulating film that will become an insulating layer 127 later is formed in a manner that contacts the top surface of the inorganic insulating film 125f. Therefore, the top surface of the inorganic insulating film 125f preferably has a high affinity with the material (e.g., a photosensitive resin composition containing acrylic resin) used for the insulating film. In order to improve this affinity, it is preferred to perform a surface treatment to hydrophobize the top surface of the inorganic insulating film 125f (or improve its hydrophobicity). For example, it is preferred to use a silanizing agent such as hexamethyldisilazane (HMDS) for processing. By making the top surface of the inorganic insulating film 125f hydrophobic in this way, an insulating film 127f can be formed with high adhesion. In addition, as a surface treatment, the above-mentioned hydrophobization treatment can also be performed.

[0408] Then, if Figure 8C As shown in FIG. 1 , an insulating film 127 f which will later become an insulating layer 127 is formed on the inorganic insulating film 125 f.

[0409] The inorganic insulating film 125f and the insulating film 127f are preferably deposited by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, the inorganic insulating film 125f is preferably deposited by a formation method that causes less damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B than when the insulating film 127f is deposited.

[0410] In addition, the inorganic insulating film 125f and the insulating film 127f are each formed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. By increasing the substrate temperature during deposition, the inorganic insulating film 125f having a low impurity concentration and high barrier properties against at least one of water and oxygen can be formed even if the thickness is thin.

[0411] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower.

[0412] As the inorganic insulating film 125f, it is preferable to form an insulating film with a thickness of 3 nm, 5 nm or 10 nm and 200 nm, 150 nm, 100 nm or 50 nm within the above-mentioned substrate temperature range.

[0413] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferred because it can reduce deposition damage and deposit a film with high coverage. As the inorganic insulating film 125f, for example, an aluminum oxide film is preferably formed by the ALD method.

[0414] In addition, the inorganic insulating film 125f may be formed by a sputtering method, a CVD method, or a PECVD method having a higher deposition rate than the ALD method. Thus, a display device with high reliability can be manufactured with high productivity.

[0415] The insulating film 127f is preferably formed by the wet deposition method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, and more specifically, is preferably formed using a photosensitive resin composition containing an acrylic resin.

[0416] For example, it is preferred to use a resin composition containing a polymer, an acid generator and a solvent to form the insulating film 127f. The polymer is formed using one or more monomers and has a structure in which one or more structural units (also referred to as constituent units) are regularly or irregularly repeated. As an acid generator, one or both of a compound that generates an acid by irradiating light and a compound that generates an acid by heating can be used. The resin composition may also contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesive aid, a surfactant and an antioxidant.

[0417] In addition, it is preferable to perform heat treatment (also referred to as pre-baking) after forming the insulating film 127f. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. The substrate temperature during the heat treatment is preferably 50° C. to 200° C., more preferably 60° C. to 150° C., and further preferably 70° C. to 120° C. In this way, the solvent in the insulating film 127f can be removed.

[0418] Next, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet light. Here, in the case where a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated to a region where the insulating layer 127 is not formed in a later process. The insulating layer 127 is formed in a region sandwiched by any two of the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated to the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the conductive layer 152C. Note that in the case where a negative photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated to a region where the insulating layer 127 is to be formed.

[0419] The width of the insulating layer 127 to be formed later can be controlled by the region in which the insulating film 127f is exposed. In this embodiment, the insulating layer 127 is processed so that the insulating layer 127 has a portion overlapping with the top surface of the conductive layer 151.

[0420] The light used for exposure preferably includes i-line (wavelength: 365 nm). Alternatively, the light used for exposure may include at least one of g-line (wavelength: 436 nm) and h-line (wavelength: 405 nm).

[0421] Here, by providing an oxygen blocking insulating layer (e.g., an aluminum oxide film) as one or both of the sacrificial layer 158 (sacrificial layer 158R, sacrificial layer 158G, and sacrificial layer 158B) and the inorganic insulating film 125f, diffusion of oxygen into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be suppressed. When light (visible light or ultraviolet light) is irradiated to the organic compound layer, the organic compound contained in the organic compound layer sometimes becomes excited and promotes reaction with oxygen in the atmosphere. Specifically, when light (visible light or ultraviolet light) is irradiated to the organic compound layer in an oxygen-containing atmosphere, oxygen may be bonded to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, bonding of oxygen in the atmosphere to the organic compound contained in the organic compound layer can be suppressed.

[0422] Then, if Fig. 9AAs shown, the exposed area in the insulating film 127f is removed by development to form the insulating layer 127a. The insulating layer 127a is formed in the area sandwiched by any two of the conductive layer 152R, the conductive layer 152G, and the conductive layer 152B and the area surrounding the conductive layer 152C. Here, in the case of using an acrylic resin for the insulating film 127f, an alkaline solution, such as TMAH, can be used as a developer.

[0423] Next, residues left during development (so-called scum) may be removed. For example, the residues may be removed by ashing using oxygen plasma.

[0424] In addition, etching may be performed to adjust the height of the surface of the insulating layer 127a. The insulating layer 127a may be processed by, for example, ashing using oxygen plasma. In addition, when a non-photosensitive material is used as the insulating film 127f, the height of the surface of the insulating film 127f may also be adjusted by, for example, ashing.

[0425] Then, if Fig. 9B As shown, the insulating layer 127a is used as a mask to perform etching to remove a portion of the inorganic insulating film 125f, thereby reducing the thickness of a portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. As a result, the inorganic insulating layer 125 is formed under the insulating layer 127a. In addition, the surface of the thinner portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B is exposed. Hereinafter, the etching process using the insulating layer 127a as a mask is sometimes referred to as the first etching process.

[0426] The first etching process can be performed by dry etching or wet etching. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, the first etching process can be performed at once, which is preferable.

[0427] By using the insulating layer 127 a having tapered side surfaces as a mask for etching, the side surfaces of the inorganic insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 158R, 158G, and 158B can be easily tapered.

[0428] When dry etching is performed, chlorine-based gas is preferably used. As the chlorine-based gas, one gas selected from Cl2, BCl3, SiCl4, and CCl4, or a mixture of two or more of the above gases, can be used. In addition, one gas selected from oxygen gas, hydrogen gas, helium gas, and argon gas, or a mixture of two or more of the above gases can be appropriately added to the above chlorine-based gas. By utilizing dry etching, thin regions of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B can be formed with excellent in-plane uniformity.

[0429] As a dry etching device, a dry etching device having a high-density plasma source can be used. For example, as a dry etching device having a high-density plasma source, for example, an inductively coupled plasma (ICP: Inductively Coupled Plasma) etching device can be used. Alternatively, a capacitively coupled plasma (CCP: Capacitively Coupled Plasma) etching device including parallel plate electrodes can be used. The capacitively coupled plasma etching device including parallel plate electrodes can also adopt a structure in which a high-frequency voltage is applied to one of the parallel plate electrodes. Alternatively, a structure in which multiple different high-frequency voltages are applied to one of the parallel plate electrodes can also be adopted. Alternatively, a structure in which a high-frequency voltage with the same frequency is applied to each of the parallel plate electrodes can also be adopted. Alternatively, a structure in which high-frequency voltages with different frequencies are applied to each of the parallel plate electrodes can also be adopted.

[0430] In addition, when dry etching is performed, byproducts generated during dry etching may be deposited on the top surface and side surfaces of the insulating layer 127a. As a result, components in the etching gas, components in the inorganic insulating film 125f, components in the sacrificial layers 158R, 158G, and 158B may be included in the insulating layer 127 after the display device is completed.

[0431] In addition, it is preferred to perform the first etching process using wet etching. By using the wet etching method, the damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be further reduced compared to the case of using the dry etching method. For example, wet etching can be performed using an alkaline solution. For example, TMAH, an alkaline solution, can be used in the wet etching of the aluminum oxide film. At this time, wet etching can be performed in a glue coating manner. When the inorganic insulating film 125f is deposited using the same material as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, the above-mentioned etching process can be performed at one time, so it is preferred.

[0432] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped in a state where the thickness is reduced. In this way, by leaving the corresponding sacrificial layers 158R, 158G, and 158B on the organic compound layers 103R, 103G, and 103B, the organic compound layers 103R, 103G, and 103B can be prevented from being damaged in the subsequent process.

[0433] Next, the entire substrate is preferably exposed to visible light or ultraviolet light to irradiate the insulating layer 127a. The energy density of this exposure is preferably higher than 0 mJ / cm 2And 800mJ / cm 2 Below, more preferably higher than 0 mJ / cm 2 And 500mJ / cm 2 By performing such exposure after development, the transparency of the insulating layer 127a can be improved. In addition, the substrate temperature required for heat treatment in a later step for deforming the insulating layer 127a into a tapered shape can be reduced.

[0434] Here, by providing an oxygen blocking insulating layer (e.g., an aluminum oxide film) as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is possible to suppress the diffusion of oxygen into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. When light (visible light or ultraviolet light) is irradiated to the organic compound layer, sometimes the organic compound contained in the organic compound layer becomes excited and promotes the reaction with oxygen in the atmosphere. Specifically, when light (visible light or ultraviolet light) is irradiated to the organic compound layer in an oxygen-containing atmosphere, oxygen may be bonded to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B on the island-shaped organic compound layer, it is possible to suppress the oxygen in the atmosphere from bonding to the organic compound contained in the organic compound layer.

[0435] Next, a heat treatment (also called post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be deformed into an insulating layer 127 having a tapered shape on its side. Fig. 9C ). The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50°C to 200°C, preferably 60°C to 150°C, and more preferably 70°C to 130°C. The heating atmosphere can be either an air atmosphere or an inert gas. In addition, the heating atmosphere can be either an air atmosphere or a reduced pressure atmosphere. In the heat treatment of this step, it is preferred to increase the substrate temperature compared to the heat treatment (pre-baking) after the insulating film 127f is formed. Thereby, the adhesion between the insulating layer 127 and the inorganic insulating layer 125 can be improved, and the corrosion resistance of the insulating layer 127 can also be improved.

[0436] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, but the sacrificial layers 158R, 158G, and 158B are left in a thin state, so that the organic compound layers 103R, 103G, and 103B can be prevented from being damaged and deteriorated during the heat treatment. Thus, the reliability of the light-emitting device can be improved.

[0437] Note that the side surface of the insulating layer 127 may have a concave curved surface shape depending on the material of the insulating layer 127 and the temperature, time, and atmosphere of the post-bake. For example, as the temperature in the post-bake conditions increases or the time increases, the shape of the insulating layer 127 is more likely to change, and thus a concave curved surface shape may be formed.

[0438] Then, if Fig. 10A As shown in FIG. 1 , etching is performed using the insulating layer 127 as a mask to remove a portion of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. Note that a portion of the inorganic insulating layer 125 is sometimes removed. As a result, openings are formed in the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, respectively, and the top surfaces of the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, and the conductive layer 152C are exposed. Hereinafter, the etching process using the insulating layer 127 as a mask is sometimes referred to as a second etching process.

[0439] The end of the inorganic insulating layer 125 is covered with the insulating layer 127. Fig. 10A An example is shown in which a portion of the end portion of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered with the insulating layer 127 and the tapered portion formed by the second etching process is exposed.

[0440] When the inorganic insulating layer 125 and the mask layer are etched at once without the first etching process and after post-baking, sometimes the inorganic insulating layer 125 and the mask layer below the end of the insulating layer 127 disappear due to side etching and form a cavity. Due to the cavity, unevenness is generated on the surface where the common electrode 155 is formed, and disconnection is likely to occur in the common electrode 155. Even if the inorganic insulating layer 125 and the mask layer are side-etched to form a cavity after the first etching process, the cavity can be filled by the insulating layer 127 through the post-baking performed later. Then, in the second etching process, the mask layer whose thickness is further thinned is etched, so the amount of side etching is less, it is not easy to form a cavity, and the cavity that can be formed can also be extremely small. Therefore, the surface where the common electrode 155 is formed can be made flatter.

[0441] The insulating layer 127 may cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may sag and cover the end of the sacrificial layer 158G. In addition, for example, the end of the insulating layer 127 may contact the top surface of at least one of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B. As described above, when the insulating layer 127a after development is not exposed, the shape of the insulating layer 127 may be easily changed.

[0442] The second etching process is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared with the case of using the dry etching method. Wet etching can be performed using an alkaline solution such as TMAH.

[0443] On the other hand, when the second etching process is performed by wet etching, if there is a gap at the interface between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and between the organic compound layer 103 and the insulating layer 175 due to problems such as the adhesion between the organic compound layer 103 and other layers, the chemical solution used in the second etching process sometimes enters the gap and contacts the pixel electrode. Here, when the chemical solution contacts both the conductive layer 151 and the conductive layer 152, the conductive layer with a lower natural potential among the conductive layers 151 and 152 is sometimes corroded due to galvanic corrosion. For example, when aluminum is used as the conductive layer 151 and indium tin oxide is used as the conductive layer 152, the conductive layer 152 is sometimes corroded. As a result, the yield of the display device is sometimes reduced. In addition, the reliability of the display device is sometimes reduced.

[0444] As described above, when the conductive layer 152 is formed so as to cover the top surface and the side surfaces of the conductive layer 151, the chemical solution can be prevented from contacting the conductive layer 151 in the second etching process even if there is a gap between the organic compound layer 103 and the sacrificial layer 158, between the organic compound layer 103 and the inorganic insulating layer 125, and between the organic compound layer 103 and the insulating layer 175. Thus, corrosion of the pixel electrode, for example, corrosion of the conductive layer 152 can be prevented.

[0445] Furthermore, since the insulating layer 156 is formed to have a region overlapping the side surface of the conductive layer 151 and the conductive layer 152 is formed to cover the conductive layer 151 and the insulating layer 156, the conductive layer 152 can be prevented from being disconnected, so that, for example, the chemical solution can be prevented from contacting the conductive layer 151 in the second etching process. Thus, corrosion of the pixel electrode, for example, corrosion of the conductive layer 152 can be prevented.

[0446] As described above, by providing the insulating layer 127, the inorganic insulating layer 125, the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, it is possible to suppress the occurrence of poor connection due to disconnected portions and resistance increase due to locally thin portions in the common electrode 155 between the light-emitting devices. Thus, the display device of one embodiment of the present invention can improve display quality.

[0447] In addition, after partially exposing the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B, a heat treatment may be further performed. By this heat treatment, water contained in each organic compound layer and water adsorbed on the surface of each organic compound layer may be removed. In addition, the shape of the insulating layer 127 may change due to the heat treatment. Specifically, the insulating layer 127 may expand in a manner covering at least any one of the end of the inorganic insulating layer 125, the end of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, and the top surface of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0448] If the temperature of the heat treatment is too low, water contained in each organic compound layer and water adsorbed on the surface of each organic compound layer cannot be removed. If the temperature of the heat treatment is too high, the organic compound layer 103 may be degraded and the shape of the insulating layer 127 may change excessively. Therefore, the heat treatment temperature is preferably higher than the temperature at which water is desorbed from the organic compound layer 103 and lower than the T of the organic compound contained in the organic compound layer 103. g , more preferably lower than the T of the organic compound contained in the top surface of the organic compound layer 103 g Specifically, the substrate temperature is preferably 80° C. or higher and 130° C. or lower, more preferably 90° C. or higher and 120° C. or lower, further preferably 100° C. or higher and 120° C. or lower, and further preferably 100° C. or higher and 110° C. or lower. The heating atmosphere may be either an air atmosphere or an inert gas. Note that the heating atmosphere may be an atmospheric pressure atmosphere or a reduced pressure atmosphere, and a reduced pressure atmosphere is preferably used to prevent the re-adsorption of water separated from the organic compound layer 103.

[0449] By this heat treatment, water contained in each organic compound layer, water adsorbed on the surface of each organic compound layer, and the like can be sufficiently removed without causing degradation of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B and excessive change in the shape of the insulating layer 127. Thus, degradation of the characteristics of the light-emitting device can be prevented.

[0450] Then, if Fig. 10B As shown, a common layer 104 and a common electrode 155 are formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the insulating layer 127. The common layer 104 and the common electrode 155 can be formed by a method such as a sputtering method or a vacuum evaporation method. Alternatively, the common layer 104 can be formed by an evaporation method and the common electrode 155 can be formed by a sputtering method.

[0451] Then, if Fig. 10CAs shown, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by vacuum evaporation, sputtering, CVD, ALD or the like.

[0452] Next, the substrate 120 is bonded to the protective layer 131 using the resin layer 122, whereby a display device can be manufactured. As described above, in the method for manufacturing a display device according to one embodiment of the present invention, the insulating layer 156 is provided so as to have a region overlapping with the side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. Thus, the yield of the display device can be improved, and the occurrence of defects can be suppressed.

[0453] As described above, in a method for manufacturing a display device of one embodiment of the present invention, the island-shaped organic compound layer 103R, the island-shaped organic compound layer 103G, and the island-shaped organic compound layer 103B are not formed using a high-precision metal mask but are formed by depositing a film on one surface and then processing it, so the island-shaped layer can be formed with a uniform thickness. In addition, a high-definition display device or a display device with a high aperture ratio can be realized. In addition, even if the clarity or aperture ratio is high and the distance between sub-pixels is extremely short, the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be prevented from contacting each other in adjacent sub-pixels. Therefore, leakage current can be suppressed between sub-pixels. Thus, crosstalk can be prevented and a display device with extremely high contrast can be realized. In addition, a display device having good characteristics even if it includes a tandem light-emitting device manufactured by lithography technology can be provided.

[0454] The structure of this embodiment can be used in combination with the structures of other embodiments as appropriate.

[0455] Implementation method 5 In this embodiment, a display device which is one embodiment of the present invention is described.

[0456] The display device of this embodiment can be a high-definition display device. Therefore, for example, the display device of this embodiment can be used for the display portion of information terminal devices (wearable devices) such as watch-type and bracelet-type devices, and the display portion of wearable devices that can be worn on the head such as VR devices such as head-mounted displays (HMDs) and glasses-type AR devices.

[0457] In addition, the display device of this embodiment can be a high-resolution display device or a large display device. Therefore, for example, the display device of this embodiment can be used for the display portion of the following devices: electronic devices with large screens such as television devices, desktop or notebook personal computers, displays for computers, etc., digital signage and large game machines such as pinball machines, etc.; digital cameras; digital video cameras; digital photo frames; mobile phones; portable game consoles; portable information terminals; and sound reproduction devices.

[0458] [Display module] Fig.11A The display module 280 is shown in a perspective view. The display module 280 includes a light emitting device 100A and an FPC 290 .

[0459] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display portion 281. The display portion 281 is an image display region in the display module 280, and light from each pixel provided in a pixel portion 284 described below can be viewed.

[0460] Fig. 11B 2 is a perspective view schematically showing a structure on one side of a substrate 291. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. In addition, a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that is not overlapped by the pixel portion 284. The terminal portion 285 is electrically connected to the circuit portion 282 via a wiring portion 286 composed of a plurality of wirings.

[0461] The pixel portion 284 includes a plurality of pixels 284 a arranged periodically. Fig. 11B An enlarged view of one pixel 284a is shown on the right side of FIG. The pixel 284a can adopt the various structures described in the above embodiment. Fig. 11B Pixel 284a is shown having Figure 3A and Figure 3B An example of the same structure as pixel 178 is shown.

[0462] The pixel circuit portion 283 includes a plurality of pixel circuits 283 a arranged periodically.

[0463] One pixel circuit 283a controls the driving of multiple elements included in one pixel 284a. Three circuits for controlling the light emission of one light emitting device may be provided in one pixel circuit 283a. For example, the pixel circuit 283a may adopt a structure including at least one selection transistor, one current control transistor (driving transistor) and a capacitor for one light emitting device. At this time, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. Thus, an active matrix display device is realized.

[0464] The circuit unit 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit unit 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. In addition, it may include at least one of a calculation circuit, a storage circuit, and a power supply circuit.

[0465] The FPC 290 is used as wiring for supplying video signals, power supply potential, and the like from the outside to the circuit portion 282. Alternatively, an IC may be mounted on the FPC 290.

[0466] The display module 280 can adopt a structure in which one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked on the lower side of the pixel unit 284, so that the display unit 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. In addition, the pixels 284a can be arranged at an extremely high density, thereby making the display unit 281 have an extremely high definition. For example, the display unit 281 preferably arranges the pixels 284a at a definition of less than 20,000 ppi or less than 30,000 ppi and more than 2,000 ppi, more preferably more than 3,000 ppi, further preferably more than 5,000 ppi, and further preferably more than 6,000 ppi.

[0467] Due to its extremely high definition, the display module 280 can be suitable for use in VR devices such as HMD or glasses-type AR devices. For example, because the display module 280 has an extremely high-definition display unit 281, in the structure of viewing the display unit of the display module 280 through a lens, even if the display unit is magnified by a lens, the user cannot see the pixels, thereby achieving a highly immersive display. In addition, without limitation to this, the display module 280 can also be applied to electronic devices with a relatively small display unit. For example, it is suitable for use in the display unit of wearable electronic devices such as watch-type devices.

[0468] [Display device 100A] Fig. 12A The display device 100A shown includes a substrate 301 , a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240 , and a transistor 310 .

[0469] Substrate 301 is equivalent to Fig.11A and Fig. 11BThe transistor 310 is a transistor having a channel formation region in the substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 includes a portion of the substrate 301, a conductive layer 311, a low resistance region 312, an insulating layer 313 and an insulating layer 314. The conductive layer 311 is used as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and is used as a gate insulating layer. The low resistance region 312 is a region doped with impurities in the substrate 301 and is used as a source or a drain. The insulating layer 314 covers the side of the conductive layer 311.

[0470] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0471] In addition, an insulating layer 261 is provided to cover the transistor 310 , and the capacitor 240 is provided over the insulating layer 261 .

[0472] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 therebetween. The conductive layer 241 is used as one electrode in the capacitor 240, the conductive layer 245 is used as the other electrode in the capacitor 240, and the insulating layer 243 is used as a dielectric of the capacitor 240.

[0473] The conductive layer 241 is provided on the insulating layer 261 and embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 through the plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided in a manner covering the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 via the insulating layer 243.

[0474] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. On the insulating layer 175, the light emitting devices 130R, 130G, and 130B are provided. Fig. 12A The light emitting device 130R, the light emitting device 130G and the light emitting device 130B are shown to have Figure 2B An example of a stacked structure is shown. An insulating material is provided in the region between adjacent light emitting devices. Fig. 12A In the embodiment, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in the region.

[0475] The insulating layer 156R is provided so as to have a region overlapping with the side surface of the conductive layer 151R included in the light emitting device 130R, the insulating layer 156G is provided so as to have a region overlapping with the side surface of the conductive layer 151G included in the light emitting device 130G, and the insulating layer 156B is provided so as to have a region overlapping with the side surface of the conductive layer 151B included in the light emitting device 130B. In addition, the conductive layer 152R is provided so as to cover the conductive layer 151R and the insulating layer 156R, the conductive layer 152G is provided so as to cover the conductive layer 151G and the insulating layer 156G, and the conductive layer 152B is provided so as to cover the conductive layer 151B and the insulating layer 156B. Furthermore, the sacrificial layer 158R is located on the organic compound layer 103R included in the light emitting device 130R, the sacrificial layer 158G is located on the organic compound layer 103G included in the light emitting device 130G, and the sacrificial layer 158B is located on the organic compound layer 103B included in the light emitting device 130B.

[0476] Conductive layer 151R, conductive layer 151G, and conductive layer 151B are electrically connected to one of the source and drain of transistor 310 via plug 256 embedded in insulating layer 243, insulating layer 255, insulating layer 174, and insulating layer 175, conductive layer 241 embedded in insulating layer 254, and plug 271 embedded in insulating layer 261. The height of the top surface of insulating layer 175 is equal to or substantially equal to the height of the top surface of plug 256. Various conductive materials can be used for the plug.

[0477] In addition, a protective layer 131 is provided on the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B. The substrate 120 is bonded to the protective layer 131 via a resin layer 122. The details of the components of the light emitting device 130 to the substrate 120 can be referred to Embodiment 3. The substrate 120 corresponds to Fig.11A substrate 292.

[0478] Fig. 12B Show Fig. 12A A modified example of the display device 100A shown. Fig. 12B The display device shown includes a coloring layer 132R, a coloring layer 132G, and a coloring layer 132B, and the light emitting device 130 has a region overlapping one of the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B. Fig. 12B In the light emitting device shown, the light emitting device 130 can emit white light, for example. In addition, for example, the coloring layer 132R, the coloring layer 132G, and the coloring layer 132B can transmit red light, green light, and blue light, respectively.

[0479] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0480] Implementation 6 In this embodiment, an electronic device which is one embodiment of the present invention is described.

[0481] The electronic device of this embodiment includes a display device of one embodiment of the present invention in a display portion. The display device of one embodiment of the present invention has high reliability and can easily achieve high definition and high resolution. Therefore, it can be used in the display portion of various electronic devices.

[0482] Electronic devices include, for example, television sets, desktop or notebook personal computers, displays for computers, etc., digital signage, large-scale game consoles such as pinball machines, and other electronic devices with larger screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, sound reproduction devices, and the like.

[0483] In particular, since the display device of one embodiment of the present invention can improve the clarity, it can be appropriately used in electronic devices including a smaller display unit. Examples of such electronic devices include watch-type and bracelet-type information terminal devices (wearable devices), wearable devices that can be worn on the head, VR devices such as head-mounted displays, glasses-type AR devices, and MR devices.

[0484] A display device according to one embodiment of the present invention preferably has an extremely high resolution such as HD (1280×720 pixels), FHD (1920×1080 pixels), WQHD (2560×1440 pixels), WQXGA (2560×1600 pixels), 4K (3840×2160 pixels), 8K (7680×4320 pixels), etc. In particular, the resolution is preferably set to 4K, 8K or above. In addition, the pixel density (clarity) of a display device according to one embodiment of the present invention is preferably 100 ppi or more, preferably 300 ppi or more, more preferably 500 ppi or more, further preferably 1000 ppi or more, further preferably 2000 ppi or more, further preferably 3000 ppi or more, further preferably 5000 ppi or more, further preferably 7000 ppi or more. By using a display device having one or both of high resolution and high definition, the sense of reality and depth can be further improved in electronic devices for personal use such as portable or home use. In addition, there is no particular limitation on the screen ratio (aspect ratio) of the display device of one embodiment of the present invention. For example, the display device can adapt to various screen ratios such as 1:1 (square), 4:3, 16:9 and 16:10.

[0485] The electronic device of this embodiment may also include a sensor (the sensor has the function of measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, inclination, vibration, smell or infrared).

[0486] The electronic device of this embodiment may have various functions. For example, it may have the following functions: a function of displaying various information (static images, dynamic images, text images, etc.) on a display unit; a function of a touch panel; a function of displaying a calendar, date, or time, etc.; a function of executing various software (programs); a function of wireless communication; a function of reading programs or data stored in a storage medium; etc.

[0487] use FIG. 13A to FIG. 13D An example of a wearable device that can be worn on the head is described. These wearable devices have at least one of the functions of displaying AR content, displaying VR content, displaying SR content, and displaying MR content. When an electronic device has the function of displaying at least one of AR, VR, SR, and MR content, the user's sense of immersion can be improved.

[0488] Fig.13A The electronic device 700A shown and Fig. 13BThe electronic devices 700B shown include a pair of display panels 751, a pair of frames 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical components 753, a frame 757 and a pair of nose pads 758.

[0489] The display device of one embodiment of the present invention can be applied to the display panel 751. Thus, a highly reliable electronic device can be realized.

[0490] Both the electronic device 700A and the electronic device 700B can project the image displayed by the display panel 751 onto the display area 756 in the optical member 753. Since the optical member 753 is light-transmissive, the user can see the image displayed in the display area overlapping with the transmitted image seen through the optical member 753. Therefore, both the electronic device 700A and the electronic device 700B are electronic devices capable of AR display.

[0491] The electronic device 700A and the electronic device 700B may also be provided with a camera capable of photographing the front as an imaging unit. In addition, by providing an acceleration sensor such as a gyro sensor on the electronic device 700A and the electronic device 700B, the user's head orientation can be detected and an image corresponding to the direction can be displayed on the display area 756.

[0492] The communication unit includes a wireless communication device, through which, for example, a video signal can be supplied. In addition, the communication unit may include a connector to which a cable for supplying the video signal and the power supply potential can be connected, instead of or in addition to the wireless communication device.

[0493] Furthermore, electronic device 700A and electronic device 700B are provided with batteries, and can be charged wirelessly or by wire, or both.

[0494] The frame 721 may also be provided with a touch sensor module. The touch sensor module has a function of detecting whether the outer surface of the frame 721 is touched. Through the touch sensor module, various processes can be performed by detecting a user's tapping operation or sliding operation. For example, a process such as temporarily stopping or restarting a dynamic image can be performed through a tapping operation, and a process such as fast forwarding or rewinding can be performed through a sliding operation. In addition, by providing a touch sensor module in each of the two frames 721, the operating range can be expanded.

[0495] As the touch sensor module, various touch sensors can be used. For example, various methods such as electrostatic capacitance, resistance film, infrared, electromagnetic induction, surface acoustic wave, and optical can be used. In particular, it is preferred to use electrostatic capacitance or optical sensors in the touch sensor module.

[0496] When an optical touch sensor is used, a photoelectric conversion device (also referred to as a photoelectric conversion element) can be used as a light receiving element. Inorganic semiconductors and organic semiconductors or both can be used in the active layer of the photoelectric conversion device.

[0497] Fig. 13C The electronic device 800A shown and Fig.13D The electronic devices 800B shown each include a pair of display portions 820 , a housing 821 , a communication portion 822 , a pair of mounting portions 823 , a control portion 824 , a pair of imaging portions 825 , and a pair of lenses 832 .

[0498] The display device of one embodiment of the present invention can be applied to the display portion 820. This makes it possible to realize an electronic device with high reliability.

[0499] The display unit 820 is provided at a position visible through the lens 832 inside the housing 821. In addition, by displaying different images on each of the pair of display units 820, three-dimensional display using parallax can be performed.

[0500] The electronic device 800A and the electronic device 800B can both be referred to as VR-oriented electronic devices. A user who wears the electronic device 800A or the electronic device 800B can see the image displayed on the display unit 820 through the lens 832 .

[0501] The electronic device 800A and the electronic device 800B preferably have a mechanism in which the left and right positions of the lens 832 and the display unit 820 can be adjusted so that the lens 832 and the display unit 820 are located at the most suitable position according to the position of the user's eyes. In addition, it is preferable to have a mechanism in which the focus is adjusted by changing the distance between the lens 832 and the display unit 820.

[0502] The user can use the mounting portion 823 to mount the electronic device 800A or the electronic device 800B on the head. Fig. 13C In the embodiment, the mounting portion 823 has a shape such as the temples of glasses (also referred to as hinges or temples, etc.), but is not limited thereto. As long as the user can fit it, the mounting portion 823 may have a helmet-type or belt-type shape, for example.

[0503] The imaging unit 825 has a function of acquiring external information. The data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used in the imaging unit 825. In addition, a plurality of cameras can be provided to be able to correspond to various viewing angles such as telephoto and wide angle.

[0504] Note that an example including an imaging unit 825 is shown here, and a distance measuring sensor (hereinafter, also referred to as a detection unit) capable of measuring the distance to an object may be provided. In other words, the imaging unit 825 is a form of a detection unit. As a detection unit, for example, an image sensor or a distance image sensor such as a laser radar (...

Claims

1. An organic compound represented by formula (G1-1): in, R 2 To R 9 At least one of them is a group represented by formula (R-1) or (R-2), R 2 To R 9 The others in the above each independently represent any one of hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, α 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, When n is 2, two as α 1 The arylene groups represented by are the same as or different from each other, R 11 To R 26 Each independently represents one of hydrogen and an alkyl group having 1 to 10 carbon atoms, Furthermore, p and q each independently represent 0 or 1.

2. The organic compound according to claim 1, wherein R 4 and R 7 Either or both of are groups represented by the formula (R-1) or (R-2).

3. The organic compound according to claim 1, wherein R 11 To R 18 Any two of are bonded to each other to form a ring.

4. The organic compound according to claim 1, wherein R 19 To R 26 Any two of are bonded to each other to form a ring.

5. The organic compound according to claim 1, Where R 11 To R 26 Some of them are hydrogen, And as R 11 To R 26 Any one of the hydrogen atoms is deuterium.

6. A light emitting device comprising the organic compound according to claim 1.

7. A light emitting device, comprising: a first electrode, a second electrode, and an organic compound layer located between the first electrode and the second electrode, The organic compound layer includes a light-emitting layer and an electron injection layer, And the electron injection layer includes the organic compound according to claim 1.

8. A light emitting device, comprising: a first electrode, a second electrode, and an organic compound layer located between the first electrode and the second electrode, The organic compound layer includes a first light-emitting layer, a second light-emitting layer, and an intermediate layer between the first light-emitting layer and the second light-emitting layer. And the intermediate layer includes the organic compound as claimed in claim 1.

9. A light emitting device, comprising: The light emitting device according to claim 6; as well as One of a transistor and a substrate.

10. An electronic device, comprising: The light emitting device according to claim 9; as well as Any one of the detection unit, the input unit and the communication unit.

11. An organic compound represented by formula (G1-2): in, R 2 To R 9 At least one of them is a group represented by any one of formulae (R-1) to (R-4), R 2 To R 9 The others in the above each independently represent any one of hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, α 1 represents a substituted or unsubstituted arylene group having 6 to 30 carbon atoms, n represents 1 or 2, When n is 2, two as α 1 The arylene groups represented by are the same as or different from each other, R 11 To R 46 Each independently represents one of hydrogen and an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, And, t represents 0 or 1.

12. The organic compound according to claim 11, wherein R 4 and R 7 One or both of are groups represented by any of formulae (R-1) to (R-4).

13. The organic compound according to claim 11, wherein R 11 To R 18 Two of them, R 19 To R 26 Two of them, R 27 To R 36 Two of them and R 37 To R 46 Any two of the are bonded to each other to form a ring.

14. The organic compound according to claim 11, wherein the organic compound is represented by formula (G1-3); R 2 To R 9 At least one of them is a group represented by any one of formulae (R-5) to (R-8), R 2 To R 9 The others in the above each independently represent any one of hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, R 51 To R 54 each independently represents any one of hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, R 11 To R 46 Each independently represents one of hydrogen and an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, And t represents 0 or 1.

15. The organic compound according to claim 14, wherein R 4 and R 7 One or both of are groups represented by any of formulae (R-5) to (R-8).

16. The organic compound according to claim 14, wherein R 11 To R 18 Two of them, R 19 To R 26 Two of them, R 27 To R 36 Two of them and R 37 To R 46 Any two of the are bonded to each other to form a ring.

17. The organic compound according to claim 14, Where R 11 To R 46 Some of them are hydrogen, And as R 11 To R 46 Any one of the hydrogen atoms is deuterium.

18. The organic compound according to claim 14, wherein the organic compound is represented by formula (G1-4); R 2 To R 9 At least one of the groups is a group represented by any one of the formulae (R-9) to (R-12), R 2 To R 9 The others in the above each independently represent any one of hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, R 51 To R 54 each independently represents any one of hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, R 11 To R 46 Each independently represents one of hydrogen and an alkyl group having 1 to 10 carbon atoms, p and q each independently represent 0 or 1, k represents an integer from 0 to 4, And t represents 0 or 1.

19. The organic compound according to claim 18, wherein R 4 and R 7 One or both of are groups represented by any of formulae (R-5) to (R-8).

20. The organic compound according to claim 18, wherein R 11 To R 18 Two of them, R 19 To R 26 Two of them, R 27 To R 36 Two of them and R 37 To R 46 Any two of the are bonded to each other to form a ring.

21. The organic compound according to claim 18, wherein R 2 To R 9 Any other of is deuterium.

22. The organic compound according to claim 11, wherein the organic compound is represented by formula (G2); R 2 , R 3 , R 5 , R 6 , R 8 , R 9 and R 51 To R 58 each independently represents any one of hydrogen, an alkyl group having 1 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a substituted or unsubstituted cyclic secondary amino group having 2 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms, R 11 To R 18 and R 61 To R 68 Each independently represents one of hydrogen and an alkyl group having 1 to 10 carbon atoms, And p, q, r and s each independently represent 0 or 1.

23. The organic compound according to claim 22, The organic compound is represented by formula (G3): 。 24. The organic compound according to claim 22, The organic compound is represented by formula (G4): 。 25 . The organic compound according to claim 22 , wherein the group at the 4-position of the phenanthroline ring and the group at the 7-position thereof in formula (G2) are identical to each other.

26. The organic compound according to claim 22, The organic compound is represented by one of formula (100) and formula (152): 。 27. A light emitting device comprising the organic compound of claim 11.

28. A light emitting device, comprising: a first electrode, a second electrode, and an organic compound layer located between the first electrode and the second electrode, The organic compound layer includes a light-emitting layer and an electron injection layer, And the electron injection layer includes the organic compound according to claim 11.

29. A light emitting device comprising: a first electrode, a second electrode, and an organic compound layer located between the first electrode and the second electrode, The organic compound layer includes a first light-emitting layer, a second light-emitting layer, and an intermediate layer between the first light-emitting layer and the second light-emitting layer. And the intermediate layer includes the organic compound as claimed in claim 11.

30. A light emitting device, comprising: The light emitting device according to claim 27; as well as One of a transistor and a substrate.

31. An electronic device comprising: The light-emitting device according to claim 30; as well as Any one of the detection unit, the input unit and the communication unit.

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