Display device

Abstract

A display device is provided. The display device includes: a display element configured to generate a first color light; an encapsulation member on the display element, and including an inorganic layer at an outermost portion of the encapsulation member; a color conversion layer on the encapsulation member and including a first color conversion portion configured to transmit the first color light, a second color conversion portion configured to convert the first color light into second color light, and a third color conversion portion configured to convert the first color light into third color light; and a buffer layer between the encapsulation member and the color conversion layer, in which a difference in refractive index between the buffer layer and the inorganic layer is about 0.5 or less.

Description

[0001] This application is a divisional application of the invention patent application "Display Device" with application date of June 24, 2019 and application number 201910548066.7. Technical Field

[0002] The present disclosure herein relates to a display device. For example, embodiments of the present disclosure relate to a display device that minimizes or reduces damage to a color conversion layer and improves light extraction efficiency. Background Art

[0003] Various display devices are being developed for use in multimedia equipment such as televisions, mobile phones, navigation systems, computer monitors, game consoles, etc. In recent years, organic light emitting diodes and the like that can be applied to large-sized display devices are being developed.

[0004] In order to improve light extraction efficiency and color reproducibility of display devices, the use of light emitting bodies such as quantum dots is increasing. Summary of the invention

[0005] An embodiment of the present disclosure provides a display device in which a buffer layer whose refractive index is controlled is applied to improve light extraction efficiency.

[0006] An embodiment of the present disclosure provides a display device, comprising: a display element configured to generate a first color light; a packaging member located on the display element and comprising an inorganic layer at the outermost portion of the packaging member; a color conversion layer located on the packaging member and comprising a first color conversion portion configured to transmit the first color light, a second color conversion portion configured to convert the first color light into a second color light, and a third color conversion portion configured to convert the first color light into a third color light; and a buffer layer located between the packaging member and the color conversion layer, wherein the difference in refractive index between the buffer layer and the inorganic layer is approximately 0.5 or less.

[0007] In an embodiment, a buffer layer may be filled between the encapsulation member and the color conversion layer.

[0008] In embodiments, the inorganic layer may have a refractive index of about 1.5 to about 2.5.

[0009] In an embodiment, the buffer layer may have a refractive index of about 1.5 to about 2.0.

[0010] In an embodiment, the display device may further include a color filter layer on the color conversion layer.

[0011] In an embodiment, the color filter layer may include: a first color filter portion overlapping the first color conversion portion and configured to transmit the first color light; a second color filter portion overlapping the second color conversion portion and configured to block the first color light and transmit the second color light; and a third color filter portion overlapping the third color conversion portion and configured to block the first color light and transmit the third color light.

[0012] In an embodiment, the display device may further include a cover layer located in at least one position selected from a position between the color conversion layer and the buffer layer and a position between the color conversion layer and the color filter layer.

[0013] In an embodiment, the buffer layer may include a bottom surface contacting the encapsulation member, and a top surface adjacent to the color conversion layer and including an uneven pattern.

[0014] In an embodiment, an internal space may be defined between the buffer layer and the color conversion layer.

[0015] In an embodiment, the buffer layer may contact at least one of the second color conversion portion and the third color conversion portion.

[0016] In an embodiment, the color conversion layer may include quantum dots.

[0017] In an embodiment, the first color light may include light having a wavelength region of about 410nm to about 480nm, the second color light may include light having a wavelength region of about 500nm to about 570nm, and the third color light may include light having a wavelength region of about 625nm to about 675nm.

[0018] In an embodiment, the display device may further include a low refractive index layer between the color conversion layer and the color filter layer, the low refractive index layer having a refractive index of about 1.1 to about 1.5.

[0019] In an embodiment of the present disclosure, a display device includes: a display element; a color conversion layer located on the display element and including a first color conversion portion, a second color conversion portion, and a third color conversion portion, each of the first color conversion portion, the second color conversion portion, and the third color conversion portion including quantum dots and positioned to be spaced apart from each other; a packaging member located between the display element and the color conversion layer and including an inorganic layer contacting the color conversion layer; and a buffer layer located between the packaging member and the color conversion layer and having a refractive index of about 1.5 to about 2.0.

[0020] In an embodiment, in a plane, a thickness of the second color conversion portion may be greater than each of a thickness of the first color conversion portion and a thickness of the third color conversion portion, and a thickness of the third color conversion portion may be greater than a thickness of the first color conversion portion.

[0021] In an embodiment, in a plane, an area of ​​the second color conversion portion may be larger than each of an area of ​​the first color conversion portion and an area of ​​the third color conversion portion, and an area of ​​the third color conversion portion may be larger than an area of ​​the first color conversion portion.

[0022] In an embodiment, the difference in refractive index between the buffer layer and the inorganic layer may be about 0.5 or less.

[0023] In an embodiment, the display device may further include: a first cover layer located on a top surface of the color conversion layer; and a second cover layer located between the buffer layer and the color conversion layer.

[0024] In an embodiment, the buffer layer may include a bottom surface contacting the encapsulation member and a top surface adjacent to the color conversion layer, the top surface having an uneven pattern, wherein the inner space may be defined between the buffer layer and the color conversion layer.

[0025] In an embodiment, an inner space may be defined between the buffer layer and the first color conversion portion and between the buffer layer and the third color conversion portion.

[0026] In an embodiment of the present disclosure, a display device includes: a display element including a first pixel region, a second pixel region, and a third pixel region adjacent to each other in a plane, the display element including a first organic light emitting diode overlapping the first pixel region and including a light emitting layer, a second organic light emitting diode overlapping the second pixel region and including a light emitting layer, and a third organic light emitting diode overlapping the third pixel region and including a light emitting layer; an encapsulation member located on the display element and including an inorganic layer at an outermost portion of the encapsulation member; a color conversion layer located on the encapsulation member and including a first color conversion portion positioned to correspond to the first organic light emitting diode, a second color conversion portion positioned to correspond to the first organic light emitting diode, and a third organic light emitting diode positioned to correspond to the first organic light emitting diode. a second color conversion portion corresponding to the second organic light emitting diode and a third color conversion portion positioned to correspond to the third organic light emitting diode; a color filter layer located on the color conversion layer; a buffer layer located between the encapsulation member and the color conversion layer, wherein the difference in refractive index between the buffer layer and the inorganic layer is about 0.5 or less; a low refractive index layer located between the color conversion layer and the color filter layer; a first cover layer located between the color conversion layer and the low refractive index layer; and a second cover layer located between the buffer layer and the color conversion layer, wherein the light emitting layers of the first organic light emitting diode, the second organic light emitting diode and the third organic light emitting diode can be integrated with each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The accompanying drawings are included to provide a further understanding of the subject matter of the present disclosure and are incorporated in and constitute a part of the present disclosure. The accompanying drawings illustrate exemplary embodiments of the present disclosure and together with the description serve to explain the principles of the present disclosure. In the accompanying drawings: Figure 1 is a perspective view of a display device according to an embodiment of the present disclosure; Figure 2 is a plan view of a display device according to an embodiment of the present disclosure; Figure 3 is along Figure 2 A cross-sectional view taken along line II' in FIG. Figure 4A is a cross-sectional view showing a light path of a display device according to a comparative example; Figure 4B is a cross-sectional view showing an optical path of a display device according to an embodiment of the present disclosure; Figure 5 is a graph showing light conversion efficiency of display devices according to a comparative example and an embodiment of the present disclosure; Figure 6 is an equivalent circuit diagram of a pixel according to an embodiment of the present disclosure; Figure 7 is a cross-sectional view showing a portion of a display device according to an embodiment of the present disclosure; Figure 8 is a cross-sectional view of a display device according to an embodiment of the present disclosure; Fig. 9 is a plan view of a display device according to an embodiment of the present disclosure; Fig.10 is along Fig. 9 A cross-sectional view taken along line II-II'; Fig.11 is a cross-sectional view of a display device according to an embodiment of the present disclosure; Fig.12 is a cross-sectional view of a display device according to an embodiment of the present disclosure; Fig.13 is a cross-sectional view of a display device according to an embodiment of the present disclosure; and Fig.14 is a cross-sectional view of a display device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0028] The example embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Because the present disclosure may include various modified embodiments, the example embodiments are shown in the drawings and described in the specific embodiments of the present disclosure. However, this does not limit the present disclosure to the example embodiments, and it should be understood that within the spirit and scope of the present disclosure, the present disclosure covers all modifications, equivalents and replacements.

[0029] The same reference numerals always represent the same elements. In the accompanying drawings, for ease of description and clarity, the size and size of each structure may be exaggerated, omitted or schematically shown. It will be understood that, although terms such as "first" and "second" are used here to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one component from another component. For example, without departing from the scope of the appended claims, an element referred to as a first element in one embodiment may be referred to as a second element in another embodiment. Unless explicitly described to the contrary, terms in the singular may include plural forms.

[0030] As used herein, the terms “comprise” and “include” mean including the stated properties, regions, fixed numbers, steps, processes, elements and / or components, but not excluding other properties, regions, fixed numbers, steps, processes, elements and / or components.

[0031] In the present disclosure, it will be understood that when a layer (or film), region or plate is referred to as being "on" another layer, region or plate or "on the upper portion of" another layer, region or plate, the layer (or film), region or plate may be directly on the other layer, region or plate, or an intermediate layer, region or plate may also be present. In contrast, it will be understood that when a layer (or film), region or plate is referred to as being "below" another layer, region or plate or "on the lower portion of" another layer, region or plate, the layer (or film), region or plate may be directly below the other layer (or film), region or plate, or an intermediate layer, region or plate may also be present. In addition, in the present disclosure, a structure in which a layer, film, region or plate is "on" another layer, film, region or plate may include a structure in which the layer, film, region or plate is on the lower portion and / or upper portion of the other layer, film, region or plate.

[0032] In the present disclosure, "direct contact" may mean that there is no other layer, film, region, plate, etc. between one layer, film, region, plate, etc. and another layer, film, region, plate, etc. For example, "direct contact" may mean that two layers or two members are positioned without using an additional member such as an adhesive member between them.

[0033] Hereinafter, a display device according to an embodiment of the present disclosure will be described with reference to the accompanying drawings.

[0034] Figure 1 is a perspective view of a display device according to an embodiment of the present disclosure. Figure 2 is a plan view of a display device according to an embodiment of the present disclosure, Figure 3 is along Figure 2 A cross-sectional view taken along line II'.

[0035] Reference Figure 1 The display device DD includes a display element, an encapsulation member TFE on the display element, a buffer layer BFL on the encapsulation member TFE, and a color conversion layer CCL on the buffer layer BFL. The buffer layer BFL can protect the color conversion layer CCL to improve light extraction efficiency of the display element.

[0036] The display element according to the present disclosure may be an organic light emitting diode OLED as a self-luminous element, and the organic light emitting diode OLED may generate a first color light. For example, the first color light provided by the organic light emitting diode OLED may be blue light. The blue light may include light having a wavelength region of about 410 nm to about 480 nm (e.g., a wavelength in the range of about 410 nm to about 480 nm).

[0037] The display device DD may further include a first substrate SUB1 and a second substrate SUB2 positioned facing each other. The organic light emitting diode OLED may be located on the second substrate SUB2.

[0038] Reference Figure 2 , the display device DD according to the embodiment may include a display area DA on which an image may be displayed and a non-display area NDA on which no image is displayed. The non-display area NDA may be located outside the display area DA.

[0039] The display device DD may have a rectangular shape having a plane defined by an axis along the first direction DR1 and an axis along the second direction DR2. The display device DD may also have a thickness in a third direction DR3 perpendicular to the first direction DR1 and the second direction DR2. However, the present disclosure is not limited thereto. For example, the display area DA and the non-display area NDA may be relatively designed in shape.

[0040] Despite Figure 2 The display device DD includes a flat display surface, but the present disclosure is not limited thereto. The display device DD according to the embodiment may include a curved display surface or a stereoscopic display surface. The stereoscopic display surface may include a plurality of display areas indicating different directions. For example, the stereoscopic display surface may include a polygonal columnar display surface.

[0041] The display area DA may include a plurality of pixel areas Pxa-B, Pxa-G, and Pxa-R. For example, the pixel areas Pxa-B, Pxa-G, and Pxa-R may be defined by a plurality of gate lines and a plurality of data lines. The pixel areas Pxa-B, Pxa-G, and Pxa-R may be arranged in a matrix form. The pixels described below may be located in each of the pixel areas Pxa-B, Pxa-G, and Pxa-R.

[0042] The display device DD may include a first pixel region, a second pixel region, and a third pixel region, which are adjacent to each other in a plane and emit light having different wavelengths from each other. In an embodiment, the first pixel region may be a blue pixel region Pxa-B, the second pixel region may be a green pixel region Pxa-G, and the third pixel region may be a red pixel region Pxa-R. For example, in an embodiment, the display device DD may include a blue pixel region Pxa-B, a green pixel region Pxa-G, and a red pixel region Pxa-R. The blue pixel region Pxa-B may be a blue light-emitting region configured to emit blue light. The green pixel region Pxa-G and the red pixel region Pxa-R may be a green light-emitting region configured to emit green light and a red light-emitting region configured to emit red light, respectively.

[0043] Figure 2 The arrangement structure of the pixel regions shown in FIG. 1 may be referred to as a stripe structure, but the present disclosure is not limited to the arrangement structure of the pixel regions. For example, the pixel regions may have a PenTile structure.

[0044] In an embodiment, the display device DD may be a rigid display device. However, the present disclosure is not limited thereto. For example, the display device DD according to an embodiment of the present disclosure may be a flexible display device.

[0045] Reference Figure 3 , the display device DD according to the embodiment may include a first substrate SUB1 and a second substrate SUB2. Each of the first substrate SUB1 and the second substrate SUB2 may include a polymer substrate, a plastic substrate, a glass substrate and / or a quartz substrate. Each of the first substrate SUB1 and the second substrate SUB2 may include a transparent insulating substrate. Each of the first substrate SUB1 and the second substrate SUB2 may be rigid. Each of the first substrate SUB1 and the second substrate SUB2 may be flexible.

[0046] The display device DD may include a circuit layer CL located on the second substrate SUB2. Figure 7 The circuit layer CL is described in more detail.

[0047] The display device DD according to the embodiment may include a first organic light emitting diode OLED overlapping the first pixel region Pxa-B, a second organic light emitting diode OLED overlapping the second pixel region Pxa-G, and a third organic light emitting diode OLED overlapping the third pixel region Pxa-R.

[0048] Each of the first to third organic light emitting diodes OLED may include a first electrode EL1 , a hole transport region HTR, an emission layer EML, an electron transport region ETR, and a second electrode EL2 .

[0049] The emission layers EML of the first to third organic light emitting diodes OLED may have an integral shape and be commonly located in the pixel regions Pxa-B, Pxa-G, and Pxa-R and the peripheral region NPxa. The emission layers EML may generate first color light, for example, blue light.

[0050] The encapsulation member TFE may be located on the organic light emitting diode OLED to seal the organic light emitting diode OLED. The encapsulation member TFE may include an inorganic layer IL that directly contacts the buffer layer BFL and is located at the outermost position adjacent to the color conversion layer CCL. In addition, the encapsulation member TFE may also include an organic layer OL, or may have a structure in which the inorganic layer IL and the organic layer OL are alternately and repeatedly arranged. The encapsulation member TFE may protect the organic light emitting diode OLED from moisture / oxygen, and also protect the organic light emitting diode OLED from foreign matter such as dust particles.

[0051] According to an embodiment, the inorganic layer IL may have a refractive index of about 1.5 to about 2.5. According to another embodiment, the inorganic layer IL may have a refractive index of about 1.5 to about 2.5, about 1.6 to about 2.4, or about 1.8 to about 2.3. The inorganic layer IL is not particularly limited as long as the material satisfies the refractive index. For example, the inorganic layer IL may be made of silicon nitride (SiN x ), silicon oxynitride (SiO y N x ), silicon oxide (SiO y ), titanium oxide (TiO y ) and / or aluminum oxide (AlO y ) materials.

[0052] The organic layer OL may include an acrylate-based organic material, but is not particularly limited thereto. The inorganic layer IL may be formed by a deposition method, etc., and the organic layer OL may be formed by a deposition method, a coating method, etc.

[0053] The color conversion layer CCL may include: a first color conversion portion CCP1 configured to transmit a first color light; a second color conversion portion CCP2 configured to convert the first color light into a second color light; and a third color conversion portion CCP3 configured to convert the first color light into a third color light. For example, the second color light may be green light, and the green light may include light having a wavelength region of about 500 nm to about 570 nm (e.g., a wavelength in the range of about 500 nm to about 570 nm). The third color light may be red light, and the red light may include light having a wavelength region of about 625 nm to about 675 nm (e.g., a wavelength in the range of about 625 nm to about 675 nm).

[0054] The color conversion layer CCL may include a plurality of color conversion parts CCP1, CCP2, and CCP3. According to an embodiment, the first color conversion part CCP1, the second color conversion part CCP2, and the third color conversion part CCP3 may be positioned to be spaced apart from each other in a plane. Figure 3 , the first color conversion portion CCP1, the second color conversion portion CCP2, and the third color conversion portion CCP3 may be arranged to be spaced apart from each other in a plane defined by an axis along the first direction DR1 and an axis along the third direction DR3.

[0055] The first color conversion portion CCP1 may be positioned to correspond to the first pixel area Pxa-B, the second color conversion portion CCP2 may be positioned to correspond to the second pixel area Pxa-G, and the third color conversion portion CCP3 may be positioned to correspond to the third pixel area Pxa-R.

[0056] According to an embodiment, the color conversion layer CCL may include a light emitting body, and the light emitting body may include quantum dots. The quantum dots may be selected from II-VI group compounds, III-V group compounds, IV-VI group compounds, IV group elements, IV group compounds, and combinations thereof.

[0057] The II-VI compounds can be selected from binary compounds, ternary compounds and quaternary compounds, the binary compounds are selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and combinations thereof, and the ternary compounds are selected from the group consisting of AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZ nS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and combinations thereof, and the quaternary compound is selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and combinations thereof.

[0058] The III-V compounds may be selected from binary compounds, ternary compounds and quaternary compounds. The binary compound is selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and combinations thereof. The ternary compound is selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb and combinations thereof. The quaternary compound is selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and combinations thereof. The IV-VI group compound may be selected from a binary compound, a ternary compound and a quaternary compound, the binary compound being selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and combinations thereof, the ternary compound being selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and combinations thereof, and the quaternary compound being selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and combinations thereof. The IV group element may be selected from the group consisting of Si, Ge and combinations thereof. The IV group compound may be a binary compound selected from the group consisting of SiC, SiGe and combinations thereof.

[0059] Here, the binary compound, the ternary compound, and the quaternary compound may be present in the particle at a uniform (eg, substantially uniform) concentration, or in a state where the concentration distribution is divided into locally different states.

[0060] The quantum dot may have a core-shell structure including a shell surrounding a core. In some embodiments, the quantum dot may have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell gradually decreases toward the center of the quantum dot.

[0061] The quantum dots may have nanoscale sized particles. The quantum dots may have a full width at half maximum (FWHM) of about 45 nm or less of the emission wavelength spectrum, for example, about 40 nm or less or about 30 nm or less of the full width at half maximum (FWHM). Within this range, color purity and color reproducibility may be improved. In addition, light emitted by the quantum dots may be emitted in all directions to improve the optical viewing angle.

[0062] In addition, quantum dots can have any suitable shape commonly used in the art, and are not particularly limited to any specific shape. In some embodiments, quantum dots can have a spherical shape, a pyramid shape, a multi-arm shape, a cubic nanoparticle shape, a nanotube shape, a nanowire shape, a nanofiber shape and / or a nanosheet particle shape, etc.

[0063] The light emitted from the quantum dots may change color according to the particle size of the quantum dots. For example, the particle size of the quantum dots disposed in the second color conversion portion CCP2 may be smaller than the particle size of the quantum dots disposed in the third color conversion portion CCP3. Here, the wavelength of the light emitted from the quantum dots disposed in the second color conversion portion CCP2 may be shorter than the wavelength of the light emitted from the quantum dots disposed in the third color conversion portion CCP3.

[0064] Although the first color conversion portion CCP1, the second color conversion portion CCP2, and the third color conversion portion CCP3 have the same (e.g., substantially the same) area and / or thickness in the drawings, the present disclosure is not limited thereto. For example, the first color conversion portion CCP1, the second color conversion portion CCP2, and the third color conversion portion CCP3 may have different areas and / or thicknesses.

[0065] In some embodiments, the light-blocking portion BM may be located between the first color conversion portion CCP1 and the second color conversion portion CCP2 that are spaced apart from each other and / or between the second color conversion portion CCP2 and the third color conversion portion CCP3 that are spaced apart from each other.

[0066] In an embodiment, a display device may include a color filter layer CFL. The color filter layer CFL may be on the color conversion layer CCL and include a first color filter part B-CFP, a second color filter part G-CFP, a third color filter part R-CFP, and a light blocking part BM.

[0067] In an embodiment, the first color filter portion B-CFP, the second color filter portion G-CFP, and the third color filter portion R-CFP may be positioned to be spaced apart from each other in a plane. Figure 3 , the first color filter portion B-CFP, the second color filter portion G-CFP, and the third color filter portion R-CFP may be arranged to be spaced apart from each other in a plane defined by an axis along the first direction DR1 and an axis along the third direction DR3.

[0068] The first color filter portion B-CFP may be positioned to correspond to the first color conversion portion CCP1 and configured to transmit light having a first color. The second color filter portion G-CFP may be positioned to correspond to the second color conversion portion CCP2 and configured to block light having a first color and transmit light having a second color. The third color filter portion R-CFP may be positioned to correspond to the third color conversion portion CCP3 and configured to block light having a first color and transmit light having a third color. The display device DD may include a color filter layer CFL to effectively reduce reflection of external light.

[0069] The light-blocking portion BM may be arranged to correspond to the peripheral area NPxa. The light-blocking portion BM may include an organic light-blocking material or an inorganic light-blocking material including a black pigment or a dye. The light-blocking portion BM may prevent or reduce the occurrence of light leakage, and may distinguish the boundaries between the color filter portions adjacent to each other. At least a portion of the light-blocking portion BM may be positioned to overlap the color filter portion adjacent thereto. For example, at least a portion of the light-blocking portion BM may be positioned to overlap the color filter portion adjacent thereto in the thickness direction in a plane defined by an axis along the first direction DR1 and an axis along the third direction DR3. However, the present disclosure is not limited thereto.

[0070] Although the light blocking portion BM is included in the color filter layer CFL in the embodiment of the present disclosure, the present disclosure is not limited thereto.

[0071] The buffer layer BFL is located between the encapsulation member TFE and the color conversion layer CCL. The buffer layer BFL may be located between the encapsulation member TFE and the color conversion layer CCL to prevent or reduce contact of the color conversion layer CCL with the encapsulation member TFE and improve light extraction efficiency of the display device DD.

[0072] In an embodiment, the buffer layer BFL may be filled between the encapsulation member TFE and the color conversion layer CCL. Filling between the encapsulation member TFE and the color conversion layer CCL means that the space between the encapsulation member TFE and the color conversion layer CCL is completely filled with the buffer layer BFL, so that no internal space is generated between the encapsulation member TFE and the color conversion layer CCL, and the buffer layer BFL contacts the encapsulation member TFE and all of the first color conversion portion CCP1, the second color conversion portion CCP2, and the third color conversion portion CCP3 of the color conversion layer CCL.

[0073] The buffer layer BFL may prevent or reduce oxidation of quantum dots disposed in the color conversion layer CCL. Therefore, the display device DD may maintain its light extraction efficiency without being greatly reduced.

[0074] In an embodiment, the buffer layer BFL may be directly located on the inorganic layer IL positioned at the outermost portion of the encapsulation member TFE. The difference in refractive index between the buffer layer BFL and the inorganic layer IL may be about 0.5 or less. In some embodiments, the buffer layer BFL may have a refractive index of about 1.5 to about 2.0. The buffer layer BFL may include an inorganic adhesive, an organic adhesive, or a liquid crystal compound to satisfy the refractive index having the above range, but the present disclosure is not limited thereto.

[0075] In addition, the buffer layer BFL may further include a leveling agent. In this case, even when the thicknesses and / or areas of the first color conversion portion CCP1, the second color conversion portion CCP2, and the third color conversion portion CCP3 of the color conversion layer CCL are different from each other, the buffer layer BFL may have low conformality and be flat. The buffer layer BFL may be formed by a one drop fill (ODF) method in which a buffer layer material is injected into one substrate before polymerization, and then another substrate is placed on the surface of the one substrate on which the buffer layer material is disposed and the buffer layer material is polymerized, whereby the two substrates are attached to each other.

[0076] Here, we will refer to Figure 4A-4B The refractive index of the buffer layer BFL will be described in more detail.

[0077] Figure 4A is a cross-sectional view illustrating a light path of a display device according to a comparative example. Figure 4B is a cross-sectional view illustrating a light path of a display device according to an embodiment of the present disclosure. Figure 5 is a graph showing light conversion efficiency of display devices according to a comparative example and an embodiment of the present disclosure.

[0078] Reference Figure 4A, unlike this embodiment, the buffer layer BFL is not disposed between the inorganic layer IL of the encapsulation member TFE and the color conversion layer CCL, and there is also an internal space AR. The internal space AR may be in a vacuum state and have a refractive index of about 1.0. Therefore, the difference in refractive index between the inorganic layer IL and the internal space AR is relatively large.

[0079] When light traveling from the inorganic layer IL toward the color conversion layer CCL is defined as incident light, the angle between the virtual line perpendicular to the interface between the inorganic layer IL and the internal space AR and the incident light may be defined as the incident angle. When the incident angle is greater than the total reflection angle, 100% of the incident light is reflected at the interface between the inorganic layer IL and the internal space AR. The magnitude of the total reflection angle depends on Snell's law.

[0080] When the display device does not include the buffer layer BFL, since the difference in refractive index between the inorganic layer IL and the internal space AR is relatively large, the total reflection angle is relatively small, and the incident light has an incident angle θ greater than the total reflection angle. c The portion of the incident light is totally reflected at the interface between the inorganic layer IL and the internal space AR, and thus does not reach the color conversion layer CCL. In addition, the remaining portion of the incident light has an incident angle θ smaller than the total reflection angle. r , so it is not totally reflected at the interface between the inorganic layer IL and the internal space AR. However, the incident light is greatly refracted due to the difference in refractive index between the inorganic layer IL and the internal space AR and is not transmitted to the front surface of the color conversion layer CCL. Therefore, when the buffer layer BFL is not provided between the inorganic layer IL and the color conversion layer CCL and only the internal space AR exists, the amount of light transmitted to the color conversion layer CCL is reduced, thereby reducing the light extraction efficiency.

[0081] Reference Figure 4B According to this embodiment, the buffer layer BFL is located between the inorganic layer IL and the color conversion layer CCL. Because the difference in refractive index between the buffer layer BFL and the inorganic layer IL is about 0.5 or less, the total reflection angle can be relatively large. Therefore, part of the incident light is totally reflected as Figure 4B The dashed line L1 indicates that the travel is different because the incident angle θ c is smaller than the total reflection angle, so part of the incident light (with an incident angle θ c ) is not totally reflected at the interface between the inorganic layer IL and the buffer layer BFL, but is transmitted to the side surface. r The remaining incident light (which is greatly refracted as Figure 4B The dotted line L2 indicates that the remaining incident light traveling (differently) may be refracted at a small angle to pass through the buffer layer BFL. Then, the incident light reaches the interface between the buffer layer BFL and the color conversion layer CCL, and then is refracted again to be incident into the front surface of the color conversion layer CCL.

[0082] Therefore, the display device DD according to the embodiment may include the buffer layer BFL whose refractive index is controlled to introduce light collection into the color conversion layer CCL, thereby improving light extraction efficiency.

[0083] Figure 5 is a graph showing the results obtained by comparing the retention rates of the light conversion efficiency according to the comparative example and the embodiment of the present disclosure. In order to confirm the effect when the buffer layer BFL is set, a laminated body in which a substrate, a color conversion layer and a buffer layer are sequentially stacked is provided as an embodiment, and a laminated body in which a substrate and a color conversion layer are sequentially stacked is provided as a comparative example. Example 1-1 and Comparative Example 1-1 represent the retention rates measured in the third color conversion part, and Example 1-2 and Comparative Example 1-2 represent the retention rates measured in the second color conversion part. The manufacturing process is mainly divided into three steps, and the retention rate (%) is calculated by measuring the light conversion efficiency after each step. Step 1 is a process of heat-treating each laminated body at a temperature of 180°C for 30 minutes, step 2 is a process of forming an inorganic layer, and step 3 is a process of heat-treating each laminated body at a temperature of 230°C for 30 minutes.

[0084] exist Figure 5 In the above, the retention rate (%) is a value obtained by measuring the light conversion efficiency of each laminate before performing step 1, and then converting the degree of maintaining the initial light conversion efficiency into a percentage (%) value when the above light conversion efficiency is referred to as the initial light conversion efficiency. For example, when the initial light conversion efficiency is about 24%, and the light conversion efficiency measured in step 1 is about 20%, the retention rate in step 1 is about 83%.

[0085] In Comparative Example 1-1, the retention rate decreased to a value of 88% → a value of 80% → a value of 80%, i.e., a decrease of about 8% compared to the initial retention rate. On the other hand, in Example 1-1, the retention rate decreased to a value of 88% → a value of 81% → a value of 87%, i.e., a decrease of only about 1% compared to the initial retention rate. In Comparative Example 1-2, the retention rate decreased to a value of 95% → a value of 87% → a value of 83%, i.e., a decrease of about 12% compared to the initial retention rate. On the other hand, in Example 1-2, the retention rate decreased to a value of 95% → a value of 89% → a value of 93%, i.e., a decrease of only about 2% compared to the initial retention rate.

[0086] For example, when the buffer layer BFL is located between the inorganic layer IL and the color conversion layer CCL in the display device DD, all the color conversion layers CCL located spaced apart from each other can be effectively protected. Therefore, even if heat treatment is performed at a high temperature, a high level of light conversion efficiency can be continuously maintained.

[0087] Figure 6is an equivalent circuit diagram of a pixel according to an embodiment of the present disclosure. Figure 7 is a cross-sectional view showing a portion of a display device according to an embodiment of the present disclosure.

[0088] Figure 6 One scan line GL, one data line DL, a power line PL, and a pixel PX coupled to (eg, connected to) the scan line GL, the data line DL, and the power line PL are shown. The configuration of the pixel PX may not be limited to Figure 6 structure, but can be deformable.

[0089] The organic light emitting diode OLED may be a top emission diode or a bottom emission diode. The pixel PX includes a first transistor T1 (or a switching transistor), a second transistor T2 (or a driving transistor), and a capacitor Cst as a pixel driving circuit for driving the organic light emitting diode OLED. A first power supply voltage ELVDD is provided to the second transistor T2, and a second power supply voltage ELVSS is provided to the organic light emitting diode OLED. The second power supply voltage ELVSS may be less than the first power supply voltage ELVDD.

[0090] The first transistor T1 outputs a data signal applied to the data line DL in response to a scan signal applied to the gate line GL. The capacitor Cst charges a voltage corresponding to the data signal received from the first transistor T1. The second transistor T2 is coupled to (e.g., connected to) the organic light emitting diode OLED. The second transistor T2 controls a driving current flowing through the organic light emitting diode OLED to correspond to the amount of charge stored in the capacitor Cst.

[0091] The equivalent circuit is only an example, and thus, the present disclosure is not limited thereto. The pixel PX may also include a plurality of transistors, and may include a large number of capacitors. The organic light emitting diode OLED may be coupled (eg, connected) between the power line PL and the second transistor T2.

[0092] Figure 7 The circuit layer CL, the organic light emitting diode OLED and the encapsulation member TFE are sequentially disposed on the second substrate SUB2.

[0093] In an embodiment, the circuit layer CL may include a first insulating layer IS1, a second insulating layer IS2, and a third insulating layer IS3. Each of the first insulating layer IS1 and the second insulating layer IS2 may include an inorganic material, but the type thereof is not particularly limited. The third insulating layer IS3 may include an organic material, but the type thereof is not particularly limited. In some embodiments, a barrier layer may be additionally located on the second substrate SUB2. Each of the first insulating layer IS1, the second insulating layer IS2, and the third insulating layer IS3 may have a single-layer or multi-layer structure.

[0094] The second transistor T2 includes a semiconductor pattern SP, a control electrode GE, an input electrode SE, and an output electrode DE. The semiconductor pattern SP is located on the second substrate SUB2. The semiconductor pattern SP may include a crystalline semiconductor material or amorphous silicon.

[0095] The first insulating layer IS1 is positioned on the second substrate SUB2. The first insulating layer IS1 may overlap the display area DA and the non-display area NDA and cover the semiconductor pattern SP.

[0096] The control electrode GE is located on the first insulating layer IS1. The control electrode GE overlaps the semiconductor pattern SP. The control electrode GE can be connected to the scan line GL (see Figure 6 ) are manufactured using the same photolithography process.

[0097] The second insulating layer IS2 is located on the first insulating layer IS1. The second insulating layer IS2 covers the first insulating layer IS1 and the control electrode GE. The input electrode SE and the output electrode DE are located on the second insulating layer IS2. The input electrode SE and the output electrode DE contact the semiconductor pattern SP through a plurality of contact holes CH1 and CH2 defined in the insulating layers IS1 and IS2, respectively. The second transistor T2 may be changed to a bottom gate structure.

[0098] A third insulating layer IS3 covering the second transistor T2 is located on the second insulating layer IS2. The third insulating layer IS3 may provide a flat surface.

[0099] The organic light emitting diode OLED and the pixel defining layer PDL are located on the third insulating layer IS3, and the third insulating layer IS3 may include a contact hole CH3, and the first electrode EL1 contacts the output electrode DE through the contact hole CH3. The pixel defining layer PDL may include an organic material. The opening OP of the pixel defining layer PDL exposes at least a portion of the first electrode EL1. The opening OP of the pixel defining layer PDL may define an emission area Pxa of a pixel. In an embodiment, the pixel defining layer PDL may be omitted.

[0100] In an embodiment, the emission region Pxa may overlap at least one of the first transistor T1 and the second transistor T2. The opening OP may be widened, and the first electrode EL1 may be further widened.

[0101] The first electrode EL1 is located on the third insulating layer IS3. The first electrode EL1 may be made of a metal alloy or a conductive compound. The first electrode EL1 may be an anode. The first electrode EL1 may be a transmissive electrode, a transflective electrode, or a reflective electrode.

[0102] The hole transport region HTR is disposed on the first electrode EL1. The hole transport region HTR may include at least one of a hole injection layer, a hole transport layer, a hole buffer layer, and an electron blocking layer.

[0103] The hole transport region HTR may have a single-layer structure made of a single material, a single-layer structure made of materials different from each other, or a multi-layer structure including a plurality of layers made of materials different from each other.

[0104] For example, the hole transport region HTR may have a single-layer structure of a hole injection layer or a hole transport layer, or may have a single-layer structure made of a hole injection material or a hole transport material. In addition, the hole transport region HTR may have a single-layer structure formed of a plurality of different materials, or may have a structure of a hole injection layer / hole transport layer, a hole injection layer / hole transport layer / hole buffer layer, a hole injection layer / hole buffer layer, a hole transport layer / hole buffer layer, or a hole injection layer / hole transport layer / electron blocking layer sequentially stacked from the first electrode EL1, but is not limited thereto.

[0105] As described above, the hole transport region HTR according to the embodiment may further include at least one of a hole buffer layer and an electron blocking layer in addition to the hole injection layer and the hole transport layer, but is not limited thereto.

[0106] The light emitting layer EML may be located on the hole transport region HTR. The light emitting layer EML may have a thickness of, for example, about 100 Å to about 300 Å. The light emitting layer EML may have a single-layer structure formed of a single material, a single-layer structure formed of materials different from each other, or a multi-layer structure including a plurality of layers formed of materials different from each other.

[0107] The light emitting layer EML may include a fluorescent light emitting material or a phosphorescent light emitting material. In an embodiment, the light emitting layer EML may emit blue light. The light emitting layer EML may emit light having a wavelength region of about 410 nm to about 480 nm (eg, a wavelength in a range of about 410 nm to about 480 nm).

[0108] The electron transport region ETR may be disposed on the light emitting layer EML. The electron transport region ETR may include at least one of a hole blocking layer, an electron transport layer, and an electron injection layer, but is not limited thereto.

[0109] The electron transport region ETR may have a single-layer structure made of a single material, a single-layer structure made of materials different from each other, or a multilayer structure including a plurality of layers made of materials different from each other. For example, the electron transport region ETR may have a single-layer structure of an electron injection layer or an electron transport layer, or may have a single-layer structure made of an electron injection material or an electron transport material. In addition, the electron transport region ETR may have a single-layer structure made of a plurality of materials different from each other, or a structure of an electron transport layer / electron injection layer or a hole blocking layer / electron transport layer / electron injection layer sequentially stacked from the light-emitting layer EML, but is not limited thereto.

[0110] The second electrode EL2 may be located on the electron transport region HTR. The second electrode EL2 may have conductivity. The second electrode EL2 may be made of a metal alloy or a conductive compound. The second electrode EL2 may be a cathode. The second electrode EL2 may be a transmissive electrode, a transflective electrode, or a reflective electrode.

[0111] In some embodiments, the second electrode EL2 may be coupled to (eg, connected to) the auxiliary electrode. When the second electrode EL2 is coupled to (eg, connected to) the auxiliary electrode, the resistance of the second electrode EL2 may be reduced.

[0112] The encapsulation member TFE may be located on the second electrode EL2. The encapsulation member TFE may be co-located on the pixel regions Pxa-B, Pxa-G, and Pxa-R (emission region Pxa) and the peripheral region NPxa. The encapsulation member TFE may directly cover the second electrode EL2. The encapsulation member TFE may include at least one inorganic layer IL and also include an organic layer OL. In some embodiments, the encapsulation member TFE may have a structure in which an inorganic layer IL and an organic layer OL are alternately repeated. In an embodiment, the encapsulation member TFE may include an inorganic layer IL at its outermost portion.

[0113] Figure 8 is a cross-sectional view of a display device according to an embodiment of the present disclosure. Fig. 9 is a plan view of a display device according to an embodiment of the present disclosure. Fig.10 is along Fig. 9 A cross-sectional view taken along line II-II'.

[0114] exist Figure 8 and Fig.10 In, when Figure 3 In comparison, the organic light emitting diode OLED and the encapsulation member TFE are schematically shown. Figure 1-Figure 7 Repeated description of the described feature.

[0115] Reference Figure 8In the display device DD-1, in the color conversion layer CCL, the first color conversion part CCP1, the second color conversion part CCP2, and the third color conversion part CCP3 may have different thicknesses from each other.

[0116] In an embodiment, in a plane defined by an axis along the first direction DR1 and an axis along the third direction DR3, a thickness H may be defined as a length measured in the third direction DR3. Here, the thickness of the first color conversion portion CCP1 may be defined as H1', ​​the thickness of the second color conversion portion CCP2 may be defined as H2', and the thickness of the third color conversion portion CCP3 may be defined as H3'. In addition, the thickness from the interface between the encapsulation member TFE and the buffer layer BFL to the first color conversion portion CCP1 may be defined as H1, the thickness from the interface between the encapsulation member TFE and the buffer layer BFL to the second color conversion portion CCP2 may be defined as H2, and the thickness from the interface between the encapsulation member TFE and the buffer layer BFL to the third color conversion portion CCP3 may be defined as H3.

[0117] The thickness H2' of the second color conversion portion CCP2 may be greater than each of the thickness H1' of the first color conversion portion CCP1 and the thickness H3' of the third color conversion portion CCP3, and the thickness H3' of the third color conversion portion CCP3 may be greater than the thickness H1' of the first color conversion portion CCP1. For example, the following equation may be satisfied: H2'>H3'>H1'. Therefore, the values ​​of the thicknesses from the interface between the encapsulation member TFE and the buffer layer BFL to the color conversion portions CCP1, CCP2, and CCP3 may satisfy the following equation: H1>H3>H2.

[0118] As the thickness of the color conversion parts CCP1, CCP2, and CCP3 increases, a larger amount of light emitters may be provided to improve the light conversion efficiency. The second color conversion part CCP2 may have a relatively low light conversion efficiency for converting the first color light into the second color light. Therefore, the thickness of the second color conversion part CCP2 may be greater than the thickness of each of the first color conversion part CCP1 and the third color conversion part CCP3. Because the first color conversion part CCP1 transmits the first color light, the first color conversion part CCP1 may have the smallest thickness.

[0119] Reference Figure 9-10 In the display device DD-2, in the color conversion layer CCL, the first color conversion part CCP1, the second color conversion part CCP2, and the third color conversion part CCP3 may have different areas from each other.

[0120] Reference Fig. 9, in a plane defined by an axis along the first direction DR1 and an axis along the second direction DR2, the first pixel region Pxa-B, the second pixel region Pxa-G, and the third pixel region Pxa-R may have areas different from each other. The fact that the areas of the first pixel region Pxa-B, the second pixel region Pxa-G, and the third pixel region Pxa-R are different from each other means that the first electrode EL1, the color conversion portions CCP1, CCP2, and CCP3, etc. of the organic light emitting diode OLED have areas different from each other.

[0121] In an embodiment, an area of ​​the second pixel region Pxa-G may be greater than an area of ​​each of the first pixel region Pxa-B and the third pixel region Pxa-R, and an area of ​​the third pixel region Pxa-R may be greater than an area of ​​the first pixel region Pxa-B.

[0122] Reference Fig.10 , in a plane defined by an axis along the first direction DR1 and an axis along the third direction DR3, when the first color conversion portion CCP1, the second color conversion portion CCP2, and the third color conversion portion CCP3 have the same (e.g., substantially the same) thickness, an area W may be defined as a value measured in the first direction DR1. Here, an area of ​​the first color conversion portion CCP1 may be defined as W1, an area of ​​the second color conversion portion CCP2 may be defined as W2, and an area of ​​the third color conversion portion CCP3 may be defined as W3.

[0123] The area W2 of the second color conversion portion CCP2 may be larger than each of the area W1 of the first color conversion portion CCP1 and the area W3 of the third color conversion portion CCP3, and the area W3 of the third color conversion portion CCP3 may be larger than the area W1 of the first color conversion portion CCP1. For example, the following equation may be satisfied: W2>W3>W1.

[0124] As the areas of the color conversion parts CCP1, CCP2, and CCP3 increase, a larger amount of light emitters may be provided to improve the light conversion efficiency. The second color conversion part CCP2 may have a relatively low light conversion efficiency for converting the first color light into the second color light. Therefore, the area of ​​the second color conversion part CCP2 may be larger than the area of ​​the third color conversion part CCP3. Because the first color conversion part CCP1 transmits the first color light, the first color conversion part CCP1 may have the smallest area.

[0125] Fig.11 is a cross-sectional view of a display device DD-3 according to an embodiment of the present disclosure. Fig.12 is a cross-sectional view of a display device DD-4 according to an embodiment of the present disclosure. Fig.13is a cross-sectional view of a display device DD-5 according to an embodiment of the present disclosure. Fig.14 is a cross-sectional view of a display device DD-6 according to an embodiment of the present disclosure.

[0126] exist Figure 11-Figure 14 In, when Figure 3 In comparison, the organic light emitting diode OLED and the encapsulation member TFE are schematically shown. Figure 1-Figure 10 Repeated description of the described feature.

[0127] Reference Fig.11 , the display device DD-3 may further include at least one cover layer CAP.

[0128] In an embodiment, the cap layer CAP may be located between the color conversion layer CCL and the buffer layer BFL and / or between the color conversion layer CCL and the color filter layer CFL. In an embodiment, the first cap layer CAP1 may be located on the top surface of the color conversion layer CCL (e.g., between the color conversion layer CCL and the color filter layer CFL), and the second cap layer CAP2 may be located between the color conversion layer CCL and the buffer layer BFL. The cap layer CAP may be made of an inorganic material. Here, the type of inorganic material is not particularly limited. The cap layer CAP may be arranged to surround the color conversion layer CCL, thereby protecting the color conversion layer CCL.

[0129] Reference Figure 12-13 , in embodiments, the buffer layer BFL may include an uneven pattern PTN.

[0130] In an embodiment, the buffer layer BFL may have a bottom surface contacting the encapsulation member TFE and a top surface adjacent to the color conversion layer CCL, the top surface having an uneven pattern PTN. The uneven pattern PTN of the buffer layer BFL may prevent or reduce total reflection of incident light, thereby improving light extraction efficiency.

[0131] The uneven pattern PTN is not particularly limited in shape or size. Therefore, the uneven pattern PTN may have a shape or size that varies according to its formation method. The method for forming the uneven pattern PTN is not particularly limited. For example, nanoparticles for forming unevenness may be provided on the top surface of the buffer layer BFL, or the buffer layer BFL may be etched to form the uneven pattern PTN.

[0132] The inner space AR may be defined between the top surface of the buffer layer BFL on which the uneven pattern PTN is formed and the color conversion layer CCL. The inner space AR may be in a vacuum state, but is not limited thereto.

[0133] Fig.13FIG. 5 shows a display device DD-5 in which the first color conversion portion CCP1, the second color conversion portion CCP2, and the third color conversion portion CCP3 have different thicknesses from each other. Figure 8 As shown in , the thickness H2' of the second color conversion portion CCP2 may be greater than each of the thickness H1' of the first color conversion portion CCP1 and the thickness H3' of the third color conversion portion CCP3, and the thickness H3' of the third color conversion portion CCP3 may be greater than the thickness H1' of the first color conversion portion CCP1.

[0134] In an embodiment, the top surface of the buffer layer BFL on which the uneven pattern PTN is formed may contact at least one of the second color conversion portion CCP2 and the third color conversion portion CCP3. Fig.13 , the thickness of the second color conversion portion CCP2 may be greater than the thickness of each of the first color conversion portion CCP1 and the third color conversion portion CCP3 and contact the top surface of the second buffer layer BFL2, and the uneven pattern PTN may not be formed on the top surface of the second buffer layer BFL2 contacting the second color conversion portion CCP2.

[0135] An inner space AR having a height H1″ may be defined between the first color conversion portion CCP1 and the top surface of the first buffer layer BFL1 on which the uneven pattern PTN is formed. In addition, an inner space AR having a height H3″ may be defined between the third color conversion portion CCP3 and the top surface of the third buffer layer BFL3 on which the uneven pattern PTN is formed. In an embodiment, a thickness of the third color conversion portion CCP3 may be greater than a thickness of the first color conversion portion CCP1, and a height H3″ from the uneven pattern PTN to the third color conversion portion CCP3 may be less than the height H1″.

[0136] Reference Fig.14 , the display device DD-6 may further include a low refractive index layer LRL. In an embodiment, the low refractive index layer LRL may be located between the color conversion layer CCL and the color filter layer CFL. According to Snell's law, the low refractive index layer LRL may completely reflect light leaking from the color conversion layer CCL due to the low refractive index to improve light extraction efficiency by recycling the light. In addition, the low refractive index layer LRL may also be applicable to Figures 1 to 13 In the embodiment shown in FIG.

[0137] The display device according to the embodiment may include a buffer layer to minimize or reduce damage to the color conversion layer.

[0138] The display device according to an embodiment of the present disclosure may include a buffer layer whose refractive index is controlled to improve light extraction efficiency.

[0139] As used herein, the terms "substantially," "about," and similar terms are used as terms of approximation rather than as terms of degree, and are intended to account for the inherent deviations in measurements or calculations that one of ordinary skill in the art would recognize. In addition, when describing embodiments of the present disclosure, the use of "may" refers to "one or more embodiments of the present disclosure." As used herein, the term "using" and its variations may be considered synonymous with the term "utilizing" and its variations, respectively. In addition, the term "exemplary" is intended to refer to an example or illustration.

[0140] In addition, any numerical range stated herein is intended to include all sub-ranges of the same numerical precision contained in the stated range. For example, the range of "1.0 to 10.0" is intended to include all sub-ranges between the stated minimum value 1.0 and the stated maximum value 10.0 (including the stated minimum value 1.0 and the stated maximum value 10.0), that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as 2.4 to 7.6. Any maximum numerical limit stated here is intended to include all smaller numerical limits contained therein, and any minimum numerical limit stated in this specification is intended to include all larger numerical limits contained therein. Therefore, the applicant reserves the right to modify this specification (including claims) to explicitly state any sub-ranges included in the range explicitly stated here.

[0141] It will be apparent to those skilled in the art that various modifications and variations can be made to the subject matter of the present disclosure. Thus, it is intended that the present disclosure cover the modifications and variations of the disclosed subject matter provided they come within the scope of the appended claims and their equivalents.

[0142] Therefore, the protection scope of the present disclosure should be determined by the technical scope of the appended claims and their equivalents.

Claims

1. A display device, comprising: a display element configured to generate light of a first color; an encapsulation member located on the display element and including an inorganic layer at an outermost portion of the encapsulation member; a color conversion layer located on the packaging member and including a first color conversion portion configured to transmit the first color light, a second color conversion portion configured to convert the first color light into a second color light, and a third color conversion portion configured to convert the first color light into a third color light; a buffer layer located between the encapsulation member and the color conversion layer, wherein a difference in refractive index between the buffer layer and the inorganic layer is 0.5 or less; a first cover layer, located on the top surface of the color conversion layer; a second cover layer, located between the buffer layer and the color conversion layer; and a low refractive index layer, located on the first cap layer and having a refractive index of 1.1 to 1.5, The inorganic layer has a refractive index of 1.5 to 2.5, and the buffer layer has a refractive index of 1.5 to 2.

0. 2 . The display device according to claim 1 , further comprising a color filter layer located on the low refractive index layer.

3. The display device according to claim 2, wherein: The color filter layer comprises: a first color filter portion overlapping the first color conversion portion to transmit the first color light; a second color filter portion overlapping the second color conversion portion and configured to block the first color light and transmit the second color light; and A third color filter portion overlaps the third color conversion portion and is configured to block the first color light and transmit the third color light.

4. The display device according to claim 1, wherein: The buffer layer contacts the second capping layer.

5. The display device according to claim 1, wherein: The color conversion layer includes quantum dots.

6. The display device according to claim 1, wherein: The first color light includes light having a wavelength region of 410 nm to 480 nm, the second color light includes light having a wavelength region of 500 nm to 570 nm, and the third color light includes light having a wavelength region of 625 nm to 675 nm.

7. The display device according to claim 1, wherein: The buffer layer comprises: a bottom surface contacting the packaging member; and A top surface is adjacent to the color conversion layer and includes an uneven pattern.

8. The display device according to claim 7, wherein: An internal space is defined between the buffer layer and the color conversion layer.

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