A polishing method, a polishing apparatus, a device, and a medium

By detecting and adjusting polishing parameters, especially polishing removal amount and temperature, the polishing process was optimized, solving the problem of poor clouding marks in chemical mechanical polishing and improving wafer surface quality and production efficiency.

CN119704034BActive Publication Date: 2026-06-02XIAN ESWIN MATERIAL TECHNOLOGY CO LTD +1

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XIAN ESWIN MATERIAL TECHNOLOGY CO LTD
Filing Date
2024-12-10
Publication Date
2026-06-02

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Abstract

The present disclosure provides a polishing method, a polishing device, a polishing apparatus and a polishing medium. The polishing method comprises: obtaining a polished wafer sample based on a preset polishing parameter, wherein the preset polishing parameter comprises a previous polishing parameter and / or a pre-stored first polishing parameter, and the polishing parameter comprises at least one of a polishing removal amount and a polishing liquid temperature; detecting a surface reflectivity of the wafer sample based on the previous polishing parameter; if the surface reflectivity is less than a first threshold value, adjusting at least one of the polishing removal amount and the polishing liquid temperature to obtain a next polishing parameter; detecting a surface reflectivity of the wafer sample based on the next polishing parameter; and repeating the above steps until the surface reflectivity of the wafer sample based on an Nth polishing parameter is greater than or equal to a second threshold value, and the Nth polishing parameter is determined as a target polishing parameter. The polishing method, the polishing device, the polishing apparatus and the polishing medium can improve the cloud mark defect.
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