A method and system for joint adjustment of the mass and stiffness of the full surface of a hemispherical resonator

Abstract

The present invention provides a method and system for joint adjustment of the mass and stiffness of the entire surface of a hemispherical resonator, belonging to the field of solid-state vibrating gyroscopes. In order to solve the problem that the existing hemispherical resonator adjustment process does not etch on the entire hemispherical shell, mass-stiffness coupling occurs during the adjustment frequency cracking process, resulting in low adjustment efficiency. A laser Doppler vibrometer is used to obtain the low-frequency axis and high-frequency axis orientation and frequency cracking value of the hemispherical resonator, and the focused ion beam is controlled to fine-tune the stiffness of the four high-frequency axis positions in high-latitude areas, and to fine-tune the mass-stiffness coupling on the four low-frequency axis positions in low-latitude areas. Etching on the entire hemispherical shell can decouple the mass and stiffness of the hemispherical resonator and improve the adjustment efficiency of the hemispherical resonator; through the mass-stiffness joint adjustment, the mass and stiffness are decoupled, and the uniformity of the mass and stiffness of the hemispherical resonator gyroscope is improved; this method has a certain universality and can be extended to the mass-stiffness adjustment of resonators of different shapes.

Description

Technical Field

[0001] The present invention relates to the technical field of solid-state vibrating gyroscopes, and in particular to a method and system for jointly adjusting the spherical surface mass and stiffness of a hemispherical resonator. Background Art

[0002] The hemispherical resonator gyroscope (HRG) is currently the most accurate solid-state vibratory gyroscope. It is considered a disruptive technology in the field of high-precision navigation. The HRG's operating principle is based on the inertia of elastic standing waves excited in a rotating, axisymmetric shell. With its advantages of high precision, long life, high reliability, and strong resistance to shock and electromagnetic interference, the HRG is the gyroscope of choice for cutting-edge equipment such as large ships and long-life satellites. The fused silica hemispherical resonator is the core component of the HRG. It is a hard and brittle hemispherical, thin-walled structural component characterized by difficult material processing, complex shape and structure, and small local feature sizes. Achieving efficient processing with high performance, high precision, and high surface quality is extremely challenging. The HRG's machining process includes rough forming, ultra-precision grinding, ultra-precision polishing, pickling, ion beam / laser leveling, coating, and heat treatment. Due to the limitations of machining technology, defects generated during ultra-precision grinding and magnetorheological polishing can lead to uneven circumferential mass, stiffness, and damping of the HRG, ultimately resulting in frequency splitting, a reduction in quality factor, and increased circumferential quality factor nonuniformity.

[0003] Trimming is the process of adjusting static and dynamic balance by removing some unbalanced material, reducing frequency splitting and improving the quality factor. The trimming process must be nearly defect-free, causing no damage to the surface and deep structure of the resonator, and its material removal efficiency is generally low. On the other hand, due to the influence of multiple factors such as shape and position errors and defects introduced by the forming process, there is a great deal of uncertainty in calculating the leveling mass distribution based on vibration characteristic detection feedback, resulting in poor actual leveling results, low efficiency and yield. Currently, mainstream trimming methods include laser ablation, chemical etching, and focused ion beam etching. Focused ion beam trimming uses a stress-free processing method with the advantages of atomic-level removal accuracy, no sub-surface damage, and continuous material removal. Therefore, it is of great significance to use a focused ion beam to achieve mass-stiffness decoupling trimming of a hemispherical resonator. Existing patents, such as a hemispherical resonator tuning method and measurement device (Application No.: CN117606510A) and a mass leveling system and method for a hemispherical resonator (Application No.: CN117190994A), use ion beams to remove unbalanced mass at the hemispherical resonator's heavy axis (i.e., the main axis of low-frequency vibration) to achieve mass leveling of the hemispherical resonator. However, the adjustment location is limited to the outer surface near the lip of the hemispherical resonator, resulting in low adjustment efficiency and inability to achieve independent adjustment of stiffness. Another existing patent, a three-dimensional mass leveling system and method for a hemispherical resonator gyroscope (Application No.: CN118310496A), discloses a three-dimensional mass leveling system and method for a hemispherical resonator gyroscope. This system uses an ion beam to adjust the first three harmonics of the unbalanced mass at different latitudes of the hemispherical resonator, but does not adjust the fourth harmonic of the unbalanced mass.

[0004] In summary, the hemispherical resonator tuning process rarely considers etching on the full hemispherical shell. This is because the hemispherical resonator will experience mass-stiffness coupling during the tuning frequency cracking process, resulting in low tuning efficiency. Summary of the Invention

[0005] The technical problems to be solved by the present invention are:

[0006] In order to solve the problem that the existing hemispherical resonator tuning process does not etch on the full hemispherical shell, mass stiffness coupling occurs during the tuning frequency cracking process, resulting in low tuning efficiency.

[0007] The present invention is to solve the above technical problems using the following technical solutions:

[0008] The present invention provides a method for jointly adjusting the mass and stiffness of the spherical surface of a hemispherical resonator, comprising the following steps:

[0009] S100, pre-treatment, cleaning the hemispherical resonator with a cleaning solution to remove contaminants attached to the surface, and then installing it on the hemispherical resonator clamping end of the focused ion beam trimming system;

[0010] S200, tapping the clamping end base of the hemispherical resonator through the piezoelectric effect generated by the piezoelectric ceramic to excite the hemispherical resonator and make it vibrate at its natural frequency; adjusting the position of the laser Doppler vibrometer so that the direction of the incident laser passes perpendicularly through the axis of the central support rod of the hemispherical resonator and irradiates the lip position of the hemispherical resonator, collecting vibration information of the hemispherical resonator through the laser Doppler vibrometer, and obtaining the low-frequency axis orientation, high-frequency axis orientation, and frequency splitting value of the hemispherical resonator;

[0011] S300, setting the focused ion beam energy to a constant value to obtain a stable removal function;

[0012] After the preparation work of S400 and steps S100-S300 is completed, the four high-frequency axis positions of the high-latitude region of the hemispherical resonator (5) are irradiated with a focused ion beam to perform stiffness adjustment. After each adjustment operation is completed, steps S100 and S200 are repeated to obtain the low-frequency axis orientation, high-frequency axis orientation and frequency decomposition value of the hemispherical resonator (5). It is determined whether the frequency decomposition value is less than 0.001 Hz. If it is less than 0.001 Hz, the stiffness adjustment operation is completed. If it is greater than 0.001 Hz, S400 is repeated until the frequency decomposition value is less than 0.001 Hz.

[0013] S500, after the stiffness adjustment in S400, determine whether the range of the frequency splitting value is between 0.001Hz and 0.0001Hz. If so, use a focused ion beam to irradiate the four low-frequency axis positions in the low-latitude area of ​​the hemispherical resonator (5) to perform mass stiffness coupling adjustment. After each adjustment operation is completed, repeat steps S100 and S200 to obtain the low-frequency axis orientation, high-frequency axis orientation and frequency splitting value of the hemispherical resonator (5), and determine whether the frequency splitting value is less than 0.0001Hz. If it is less than 0.0001Hz, complete the mass stiffness adjustment operation. If it is greater than 0.001Hz, repeat S400 until the frequency splitting value is less than 0.001Hz, then repeat S500 until the frequency splitting value is less than 0.0001Hz.

[0014] Furthermore, in the adjustment of step S400, the frequency cracking is affected by the stiffness factor affecting the position of the removed material when removing the material in the high-latitude region; and in the adjustment of step S500, the frequency cracking is affected by the mass factor and stiffness factor affecting the position of the removed material when removing the material in the low-latitude region.

[0015] Furthermore, when performing the adjustment, the adjustment method includes:

[0016] In the second-order vibration mode, the azimuth of the ring's natural rigidity axis is:

[0017]

[0018] Where δ is the azimuth angle of the point mass m1; ε is the azimuth angle of the attachment stiffness k1; α is the amplitude ratio; T0 is the maximum kinetic energy; S0 is the maximum strain energy;

[0019] The natural frequency is:

[0020]

[0021] In high latitudes, when the radial spring k1 is added to ζ1 = ε, the natural frequency is:

[0022]

[0023] For ζ2=ε+π / 4, the natural frequency is:

[0024]

[0025] Where E is Young's modulus; A is the cross-sectional area of ​​the ring; R is the radius of the ring; H is the radial thickness of the ring, H< <R;

[0026] In the low-latitude region, when the point mass m1 is added to ζ1 = δ, the natural frequency is:

[0027]

[0028] For ζ2=δ+π / 4, the natural frequency is:

[0029]

[0030] Where M0 is the mass of the ring and w0 is the initial natural frequency of the ring.

[0031] Furthermore, the mass-stiffness coupling fine-tuning is performed in the low latitude angle range of the adjustment position of 0°-15°; and the stiffness fine-tuning is performed in the high latitude angle range of the adjustment position of 55°-70°.

[0032] Furthermore, in step S100, the exhaust module of the focused ion beam trimming system is set to control the vacuum degree of the vacuum chamber (11) to be less than 1×10 -4 Pa.

[0033] The present invention provides a hemispherical resonator full surface mass-rigidity joint adjustment system, which has a program module corresponding to the above steps and executes the steps in the hemispherical resonator full surface mass-rigidity joint adjustment method during operation.

[0034] The present invention provides a computer-readable storage medium storing a computer program. The computer program is configured to implement the steps of a method for jointly adjusting the mass and stiffness of a full surface of a hemispherical resonator when called by a processor.

[0035] Compared with the prior art, the present invention has the following beneficial effects:

[0036] The present invention discloses a method and system for combined adjustment of the mass and stiffness of a hemispherical resonator. The method utilizes a laser Doppler vibrometer to obtain the orientations of the low-frequency and high-frequency axes and the frequency splitting values ​​of the hemispherical resonator. The method then controls a focused ion beam to fine-tune the mass-stiffness coupling at the four low-frequency axis positions in low-latitude regions, and fine-tune the stiffness at the four high-frequency axis positions in low-latitude regions.

[0037] The present invention achieves etching on the entire hemispherical shell by adjusting the four low-frequency axis positions at low latitudes and the four high-frequency axis positions at high latitudes of a hemispherical resonator, thereby decoupling the mass and stiffness of the hemispherical resonator and improving the adjustment efficiency of the hemispherical resonator. Through the combined mass-stiffness adjustment, the mass and stiffness are decoupled, and the uniformity of the mass and stiffness of the hemispherical resonator gyroscope is improved. The method has a certain degree of universality and can be extended to the mass-stiffness adjustment of resonators of different shapes. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a flow chart of a method for jointly adjusting the spherical surface mass and stiffness of a hemispherical resonator according to an embodiment of the present invention;

[0039] Figure 2 Schematic diagram of the adjustment area in an embodiment of the present invention;

[0040] Figure 3 Schematic diagram of hemispherical resonator testing and ion beam adjustment in an embodiment of the present invention;

[0041] Figure 4 A line chart showing the adjustment results of the low-frequency axis at low latitude and the high-frequency axis at high latitude in an embodiment of the present invention;

[0042] Figure 5 A diagram of a ring model with additional mass and stiffness in an embodiment of the present invention;

[0043] Figure 6 This is a comparison chart of the simulation rules of the effects of single mass factor adjustment, single stiffness factor adjustment and real adjustment on frequency splitting at different adjustment position latitude angles in an embodiment of the present invention.

[0044] Reference numerals:

[0045] 1. X-axis linear stage; 2. Hemispherical resonator turntable; 3. Three-dimensional adjustment stage; 4. Hemispherical resonator clamping end; 5. Hemispherical resonator; 6. Laser Doppler vibrometer; 7. Z-axis linear stage; 8. Ion beam angle adjustment turntable; 9. Ion beam source; 10. Piezoelectric ceramics; 11. Vacuum chamber. DETAILED DESCRIPTION

[0046] In the description of the present invention, it should be noted that the terminology in each embodiment, such as "up", "down", "front", "back", "left", "right", etc., which indicate directions, are only for simplifying the description of the positional relationship based on the drawings in the specification, and do not mean that the referred elements and devices must be operated in accordance with the specific directions and defined operations and methods and structures in the specification. Such directional nouns do not constitute a limitation to the present invention.

[0047] In the description of the present invention, it should be noted that the terms "first," "second," and "third" mentioned in the embodiments of the present invention are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly specifying the number of the technical features indicated. Therefore, a feature specified as "first," "second," or "third" may explicitly or implicitly include one or more of such features.

[0048] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0049] Combine Figure 2 As shown, the edge of the hemispherical resonator is defined as the low-latitude region, and the area of ​​the hemispherical shell close to the support rod is defined as the high-latitude region. A focused ion beam is used to remove material from the low-frequency axis position and the high-frequency axis position in the low-latitude region and the high-latitude region, respectively. In order to ensure that the hemispherical resonator gyroscope has high performance, the hemispherical resonator should have a very small frequency cracking, that is, the difference in the resonant frequency of the two working modes is small. Fused quartz is a fragile material. Affected by various non-ideal factors such as current processing accuracy and residual stress, the processed quartz resonator will have isotropic stiffness anisotropy and uneven mass distribution, resulting in large frequency cracking, causing the hemispherical resonator to have zero bias drift problems. In Figure 2 In the case of a hemispherical resonator, two inherent axes at 45° to each other are generated when it vibrates, also known as the principle axis. When the hemispherical resonator vibrates along the two principle axes, the vibration frequencies are ω1 and ω2 respectively. The absolute value of the difference between the two is called frequency splitting. Figure 2 In the oscillation diagram, the two main vibration axes are the low-frequency axis and the high-frequency axis.

[0050] Specific implementation plan 1: Combined Figures 1 to 5 As shown, the present invention provides a method for jointly adjusting the spherical mass and stiffness of a hemispherical resonator, comprising the following steps:

[0051] S100, pre-treatment, using cleaning fluid to clean the hemispherical resonator, remove the contaminants attached to the surface, install it on the hemispherical resonator clamping end 4 of the focused ion beam trimming system, set the exhaust module to control the vacuum degree of the vacuum chamber to be less than 1×10 -4 Pa;

[0052] The cleaning liquid can be hydrochloric acid, anhydrous ethanol or other existing cleaning liquids;

[0053] S200, tapping the base of the hemispherical resonator clamping end 4 through the piezoelectric effect generated by the piezoelectric ceramic 10 to excite the hemispherical resonator 5; adjusting the position of the laser Doppler vibrometer 6 so that the incident laser direction passes perpendicularly through the axis of the central support rod of the hemispherical resonator 5 and irradiates the lip position of the hemispherical resonator 5, and collecting vibration information of the hemispherical resonator 5 through the laser Doppler vibrometer 6 to obtain the low-frequency axis orientation, high-frequency axis orientation and frequency splitting value of the hemispherical resonator 5;

[0054] S300, controlling the displacement platform of the focused ion beam trimming system so that the incident direction of the focused ion beam is always perpendicular to the outer spherical surface of the hemispherical resonator 5, setting the focused ion beam energy to a constant value to obtain a stable removal function, and then irradiating the focused ion beam to the four low-frequency axis positions in the low-latitude area and the four high-frequency axis positions in the high-latitude area;

[0055] The hemispherical resonator clamping end 4 is placed on the three-dimensional adjustment platform 3, which has three degrees of freedom, two of which are used for linear motion, that is, for adjusting the trimmed latitude position of the hemispherical resonator 5, and the third degree of freedom is used for rotational motion of the hemispherical resonator 5, that is, for adjusting the trimmed longitude angle of the hemispherical resonator 5; by adjusting the position and posture of the hemispherical resonator 5, the ion beam of the ion beam source 9 can be vertically incident on a specified position on the surface of the hemispherical resonator; wherein the three-dimensional adjustment platform 3 is arranged on the hemispherical resonator turntable 2, and the hemispherical resonator turntable 2 is arranged on the X-axis linear platform 1; the ion beam source 9 is arranged on the ion beam angle adjustment turntable 8, and the ion beam angle adjustment turntable 8 is arranged on the Z-axis linear platform 7; the hemispherical resonator 5, the motion platform, and the ion beam source 9 are all located in the vacuum chamber 11;

[0056] After the preparations in step S400 and steps S100 to S300 are completed, the mass-stiffness decoupling and trimming of the hemispherical resonator 5 is performed, including:

[0057] The edge of the hemispherical resonator is defined as a low-latitude region, and the region of the hemispherical shell close to the support rod is defined as a high-latitude region; the focused ion beam emitted by the ion beam source 9 is irradiated to the four low-frequency axis positions in the low-latitude region and the four high-frequency axis positions in the high-latitude region; wherein, mass-stiffness coupling adjustment is performed on the four low-frequency axis positions in the low-latitude region, and stiffness fine-tuning is performed on the four high-frequency axis positions in the high-latitude region, specifically including:

[0058] First, a focused ion beam is used to irradiate the four high-frequency axis positions in the high-latitude region of the hemispherical resonator 5 to perform stiffness adjustment. After each adjustment operation is completed, steps S100 and S200 are repeated to obtain the low-frequency axis orientation, high-frequency axis orientation, and frequency splitting value of the hemispherical resonator 5. It is determined whether the frequency splitting value is less than 0.001 Hz. If it is less than 0.001 Hz, the stiffness adjustment operation is completed. If it is greater than 0.001 Hz, S400 is repeated.

[0059] S500. After the stiffness adjustment of S400 is completed, determine whether the frequency splitting value is within the range of 0.001Hz to 0.0001Hz. If so, use a focused ion beam to irradiate the four low-frequency axis positions in the low-latitude area of ​​the hemispherical resonator 5 to perform mass stiffness coupling adjustment. After each adjustment operation is completed, repeat steps S100 and S200 to obtain the low-frequency axis orientation, high-frequency axis orientation and frequency splitting value of the hemispherical resonator 5, and determine whether the frequency splitting value is less than 0.0001Hz. If it is less than 0.0001Hz, complete the mass stiffness adjustment operation. If it is greater than 0.001Hz, repeat S400 until the frequency splitting value is less than 0.001Hz, then repeat S500 until the frequency splitting value is less than 0.0001Hz.

[0060] The volume of material removed is controlled by the dwell time, and the frequency cracking is measured after each removal to make the change in frequency cracking proportional to the adjustment time. Therefore, the efficiency of the ion beam's effect on frequency cracking can be obtained through multiple adjustments.

[0061] Specific implementation plan 2: Combined Figure 5 As shown, in the adjustment of step S400, the frequency cracking is affected by the stiffness factor affecting the position of the removed material in the high-latitude area; in the adjustment of step S500, the frequency cracking is affected by the mass factor and stiffness factor affecting the position of the removed material in the low-latitude area. Specifically,

[0062] The hemispherical shell of the hemispherical resonator is equivalent to the superposition of multiple rings in the meridian direction. The unbalanced local material is equivalent to the unbalanced point mass m1 and unbalanced stiffness k1 at the local position of the ring.

[0063] In the second-order vibration mode, the azimuth of the ring's natural rigidity axis is:

[0064]

[0065] Where δ is the azimuth angle of the point mass m1; ε is the azimuth angle of the attachment stiffness k1; α is the amplitude ratio; T0 is the maximum kinetic energy; S0 is the maximum strain energy;

[0066] The natural frequency is:

[0067]

[0068] In the high latitude region, the frequency splitting is caused by the stiffness factor of the unbalanced material; when the radial spring k1 is added to ζ1 = ε, the natural frequency is:

[0069]

[0070] For ζ2=ε+π / 4, the natural frequency is:

[0071]

[0072] Where E is Young's modulus; A is the cross-sectional area of ​​the ring; R is the radius of the ring; H is the radial thickness of the ring, H< <R;

[0073] The reduction of local stiffness will lead to w k11 The decrease of the stiffness changes the w k12 The effect is small; the position where the stiffness is reduced will become the position of the low-frequency axis; therefore, the high-frequency axis adjustment in the high-latitude area will reduce the frequency cracking;

[0074] In the low-latitude region, the frequency splitting is caused by the mass factor and stiffness factor of the unbalanced material; when the point mass m1 is added to ζ1 = δ, the natural frequency is:

[0075]

[0076] For ζ2=δ+π / 4, the natural frequency is:

[0077]

[0078] Where M0 is the mass of the ring and w0 is the initial natural frequency of the ring;

[0079] The removal of point mass m1 will result in and The increase in mass and the position of the removed mass will become the position of the high-frequency axis, so the low-frequency axis adjustment in the low-latitude area will reduce the frequency cracking.

[0080] The other combinations and connection relationships of this embodiment are the same as those of the first embodiment.

[0081] Specific implementation scheme three: The present invention provides a hemispherical resonator full surface mass-stiffness joint adjustment system, which has a program module corresponding to the above steps, and executes the steps in the above hemispherical resonator full surface mass-stiffness joint adjustment method during operation.

[0082] The other combinations and connection relationships of this embodiment are the same as those of the second embodiment.

[0083] Specific implementation scheme four: The present invention provides a computer-readable storage medium, which stores a computer program. The computer program is configured to implement the steps of a method for jointly adjusting the mass and stiffness of a full surface of a hemispherical resonator when called by a processor.

[0084] The other combinations and connection relationships of this embodiment are the same as those of the second embodiment.

[0085] Simulation experiment

[0086] The focused ion beam removed material at four low-frequency axis positions in the low-latitude region and four high-frequency axis positions in the high-latitude region, with the dwell time at each trimming point set to 180 seconds.

[0087] The relationship between the number of ion beam fine-tuning times and frequency splitting during the experiment is as follows: Figure 4 As shown in Figure 2, when trimming is performed on the four low-frequency axis positions in the low-latitude region and the four high-frequency axis positions in the high-latitude region of the hemispherical resonator, the frequency splitting decreases linearly with the increase in the number of focused ion beam trimming times. And under the condition of the same number of trimming times, Figure 4 (b) The change in frequency splitting caused by the high-frequency axis position adjustment in the high-latitude region is Figure 4 (a) In the low-latitude region, the frequency axis position is adjusted twice. When the frequency splitting value is greater than 0.0001Hz, the frequency splitting value is large and the frequency splitting needs to be reduced as soon as possible. Therefore, when the high-frequency axis position is adjusted in the high-latitude region, the frequency splitting value can be greatly reduced. When the frequency splitting is less than 0.0001Hz, the frequency splitting is already very small. Due to the ion beam positioning error and the instability of the removal function, fast adjustment sometimes causes excessive adjustment, resulting in increased frequency splitting. Therefore, in order to accurately reduce the frequency splitting, slow adjustment is required to adjust the low-frequency axis position in the low-latitude region.

[0088] exist Figure 6 It can be observed that:

[0089] (1) By Figure 6 From the single quality factor adjustment curve (blue curve), it can be seen that considering only the quality factor, the frequency cracking decreases with the increase of the latitude angle of the adjustment removal material; the quality factor of the adjustment removal material has a significant effect on the frequency cracking at the latitude angle of 0°-15°; in other latitudes, the quality factor of the adjustment removal material has no obvious effect on the frequency cracking;

[0090] (2) By Figure 6From the single stiffness factor adjustment curve (green curve), it can be seen that, considering only the stiffness factor, the stiffness factor of the material removed has a significant effect on the frequency cracking in the low latitude angle range of 0°-15° and the high latitude angle range of 55°-70°; the stiffness factor of the material removed has a greater effect on the frequency cracking in the high latitude range than in the low latitude range; in other latitude regions, the stiffness factor of the material removed has no obvious effect on the frequency cracking;

[0091] (3) By Figure 6 The actual trimming curve (red curve) shows that trimming material removal has a significant effect on frequency splitting in the low latitude angle range of 0°-15° and the high latitude angle range of 55°-70°. At other latitudes, trimming material removal has no significant effect on frequency splitting. At high latitudes, the frequency splitting caused by trimming material removal is essentially the same as the frequency splitting caused by the stiffness factor of the trimmed material. Therefore, at low latitudes, the frequency splitting is primarily determined by the mass factor and stiffness factor of the trimmed material; at high latitudes, the frequency splitting is primarily determined by the stiffness factor of the trimmed material, further explaining the S400 and S500 trimming methods. The efficiency of trimming at high latitudes is approximately twice that of trimming at low latitudes. Therefore, trimming at high latitudes is used when the frequency splitting is large in the early stages of trimming, and trimming at low latitudes is used during fine tuning of less than 0.001 Hz to reduce the impact of ion beam source fluctuations on the precise frequency splitting.

[0092] Although the present invention is disclosed as above, the scope of protection disclosed by the present invention is not limited thereto. Those skilled in the art of the present invention may make various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications will fall within the scope of protection of the present invention.

Claims

1. A method for joint adjustment of the mass and stiffness of the spherical surface of a hemispherical resonator, characterized in that: The following steps are involved: S100, pre-treatment, using a cleaning solution to clean the hemispherical resonator (5), after removing contaminants attached to the surface, and then installing it on the hemispherical resonator clamping end (4) of the focused ion beam trimming system; S200, knocking the base of the clamping end (4) of the hemispherical resonator through the piezoelectric effect generated by the piezoelectric ceramic (10), exciting the hemispherical resonator (5), and causing the hemispherical resonator to vibrate at its natural frequency; adjusting the position of the laser Doppler vibrometer (6) so that the direction of the incident laser passes perpendicularly through the axis of the central support rod of the hemispherical resonator (5) and irradiates the lip position of the hemispherical resonator (5), collecting vibration information of the hemispherical resonator (5) through the laser Doppler vibrometer (6), and obtaining the low-frequency axis orientation, high-frequency axis orientation and frequency splitting value of the hemispherical resonator (5); S300, setting the focused ion beam energy to a constant value to obtain a stable removal function; After the preparations of S400 and steps S100-S300 are completed, the four high-frequency axis positions in the high-latitude region of the hemispherical resonator (5) are irradiated with a focused ion beam to perform stiffness adjustment. After each adjustment operation is completed, steps S100 and S200 are repeated to obtain the low-frequency axis orientation, high-frequency axis orientation and frequency splitting value of the hemispherical resonator (5). It is determined whether the frequency splitting value is less than 0.001 Hz. If it is less than 0.001 Hz, the stiffness adjustment operation is completed. If it is greater than 0.001 Hz, S400 is repeated until the frequency splitting value is less than 0.001 Hz. S500, after the stiffness adjustment in S400, determine whether the frequency splitting value is between 0.001 Hz and 0.0001 Hz. If so, use a focused ion beam to irradiate the four low-frequency axis positions in the low-latitude region of the hemispherical resonator (5) to perform mass stiffness coupling adjustment. After each adjustment operation is completed, repeat steps S100 and S200 to obtain the low-frequency axis orientation, high-frequency axis orientation and frequency splitting value of the hemispherical resonator (5), and determine whether the frequency splitting value is less than 0.0001 Hz. If it is less than 0.0001 Hz, complete the mass stiffness adjustment operation. If it is greater than 0.001 Hz, repeat S400 until the frequency splitting value is less than 0.001 Hz, and then repeat S500 until the frequency splitting value is less than 0.0001 Hz. When making adjustments, the adjustment methods include: In the second-order vibration mode, the azimuth of the ring's natural rigidity axis is: （1）； （2）； in, is the azimuth of the point mass m1; is the azimuth angle of the attachment stiffness k1; is the amplitude ratio; T0 is the maximum kinetic energy; S0 is the maximum strain energy; The natural frequency is: （3）； （4）； In high latitudes, when the radial spring k1 is added to When , the natural frequency is: （5）； for , the natural frequency is: （6）； Where E is Young's modulus; A is the cross-sectional area of ​​the ring; R is the radius of the ring; H is the radial thickness of the ring, ; In low latitudes, when the point mass m1 is added to When , the natural frequency is: （7）； for ζ 2= δ + π / 4, the natural frequency is: （8）； Where M0 is the mass of the ring and w0 is the initial natural frequency of the ring.

2. The method for combined adjustment of the spherical mass and stiffness of a hemispherical resonator according to claim 1, characterized in that: In the adjustment of step S400, the frequency cracking is affected by the stiffness factor affecting the position of the removed material when removing the material in the high-latitude region; in the adjustment of step S500, the frequency cracking is affected by the mass factor and stiffness factor affecting the position of the removed material when removing the material in the low-latitude region.

3. The method for combined adjustment of the spherical surface mass and stiffness of a hemispherical resonator according to claim 1, characterized in that: In the low latitude angle range of the adjustment position of 0°-15°, the mass-stiffness coupling fine-tuning is performed; in the high latitude angle range of the adjustment position of 55°-70°, the stiffness fine-tuning is performed.

4. The method for combined adjustment of the spherical surface mass and stiffness of a hemispherical resonator according to claim 3, characterized in that: In step S100, the exhaust module of the focused ion beam trimming system is set to control the vacuum degree of the vacuum chamber (11) to be less than 1×10 -4 Pa.

5. A hemispherical resonator full surface mass-stiffness joint adjustment system, characterized by: The system has a program module corresponding to the steps of any one of claims 1 to 4, and executes the steps of the above-mentioned hemispherical resonator full surface mass-stiffness joint adjustment method when running.

6. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and the computer program is configured to implement the steps of the method for jointly adjusting the spherical surface mass and stiffness of a hemispherical resonator according to any one of claims 1 to 4 when called by a processor.

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