Chip-to-waveguide conversion device, radio frequency device and radar device
By using RF traces and patch elements to form capacitance characteristics in the conversion device of chip package to waveguides, and introducing inductance characteristics through the conversion vias to form a broadband resonant structure, the problem of low loss and wide impedance bandwidth in the prior art is solved, the frequency deviation problem is avoided, and efficient RF signal conversion is achieved.
Patent Information
- Application Number
- CN202311284003.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-28
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2043-09-28
AI Technical Summary
The prior art is difficult to achieve RF signal conversion from low loss, wide impedance bandwidth chip packaged to waveguides, and processing errors in gaps in E-shaped patches may lead to frequency deviation.
A converter device that includes a chip including a first metal layer, a second metal layer, a third metal layer, a shielded metallized through hole, a conversion through hole and a dielectric substrate is used to encapsulate the waveguide, and a converting through hole, a capacitance characteristic is formed between the RF trace on the second metal layer and the patch element on the third metal layer, and an inductance characteristic is introduced through the conversion of the metallized through hole, forming a broadband resonant structure.
The transition structure of chip packaging to waveguide with a simple structure, low loss and wide impedance bandwidth is realized, which avoids the frequency deviation problem caused by gaps in the E-shaped patch and ensures the characteristics of wideband and low loss.