Polarization sensitive neuromorphic visual sensor and preparation method thereof

Abstract

The invention belongs to the field of semiconductor optoelectronic devices, and discloses a polarization-sensitive neuromorphic visual sensor and a preparation method thereof.The polarization-sensitive neuromorphic visual sensor comprises a control gate, a bottom gate medium, a floating gate layer, a tunneling layer medium and a semiconductor channel layer from bottom to top, and a source electrode and a drain electrode are further arranged on the semiconductor channel layer; wherein the semiconductor channel layer is an anisotropic semiconductor channel layer in a plane. The anisotropic semiconductor channel layer in the plane is used as the semiconductor channel layer, so that the whole device can realize a polarized light sensing function, and the polarization sensitive characteristic is realized. According to the device, visual information can be selectively sensed and processed, and calculation load and interference on an image recognition task caused by an unnecessary information processing process due to the fact that redundant data flows into a rear end are avoided.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor optoelectronic devices, and more specifically, relates to a polarization-sensitive neuromorphic vision sensor and a preparation method thereof. Background Art

[0002] With the development of artificial intelligence, image recognition technology is becoming increasingly popular, and its importance is becoming more and more prominent. The current image recognition scheme is to first collect data through visual sensors. Usually, the electrical signal obtained after photoelectric conversion needs to be transmitted to the external circuit for analog-to-digital conversion, and then input into the computing module for image processing, analysis and recognition. In this process, the sensor collects visual information indiscriminately, so that the subsequent recognition process needs to process a large amount of redundant information; in addition, due to the separation of the sensing module and the computing module, there is inevitably a delay in the transmission of information. These factors will lead to redundant learning in the recognition process, resulting in problems such as poor real-time performance and low interactivity of image recognition. Different from traditional visual sensors, the emerging neuromorphic visual sensors have sensing, storage and computing functions at the same time. They can process, calculate and store visual information synchronously when collecting it, which will greatly improve the efficiency of information processing. Therefore, the emergence of neuromorphic visual sensors will greatly promote the development of artificial vision technology. Even so, the problem of redundant information caused by the indiscriminate collection of visual information still exists, which will occupy a large amount of computing resources, which is contrary to the goal of low energy consumption and high energy efficiency of image recognition technology. Therefore, there is an urgent need to develop a visual sensor that can selectively extract key visual information during the sensing stage to meet the growing demand for rapid processing of visual information and efficient performance of recognition tasks by artificial vision systems. Summary of the invention

[0003] In view of the above defects or improvement needs of the prior art, the purpose of the present invention is to provide a polarization-sensitive neuromorphic visual sensor and a method for preparing the same, wherein by using an in-plane anisotropic semiconductor channel layer as a semiconductor channel layer, the device as a whole can realize the polarized light perception function and polarization-sensitive characteristics. The device of the present invention can selectively perceive and process visual information, avoiding the computational load and interference caused by unnecessary information processing caused by redundant data flowing into the back end to the image recognition task.

[0004] To achieve the above object, according to one aspect of the present invention, a polarization-sensitive neuromorphic visual sensor is provided, which includes, from bottom to top, a control gate, a bottom gate dielectric, a floating gate layer, a tunneling layer dielectric, and a semiconductor channel layer, wherein a source electrode and a drain electrode are also arranged on the semiconductor channel layer, wherein:

[0005] In addition to covering the upper surface of the floating gate layer, the tunneling layer dielectric also covers the surrounding side surfaces of the floating gate layer;

[0006] The semiconductor channel layer is an in-plane anisotropic semiconductor channel layer, including one of an in-plane anisotropic two-dimensional layered semiconductor material single crystal, a strip-patterned in-plane isotropic two-dimensional layered semiconductor material single crystal and a strip-patterned in-plane anisotropic two-dimensional layered semiconductor material single crystal; the strip pattern is a strip shape with equal spacing and equal width.

[0007] As a further preference of the present invention, for the in-plane anisotropic two-dimensional layered semiconductor material single crystal and the strip-patterned in-plane anisotropic two-dimensional layered semiconductor material single crystal, the semiconductor material they use is one of rhenium disulfide (ReS2), rhenium diselenide (ReSe2), palladium disulfide (PdS2), palladium diselenide (PdSe2), tin sulfide (SnS), tin selenide (SnSe), germanium sulfide (GeS), germanium selenide (GeSe), germanium arsenide (GeAs), germanium disulfide (GeS2), germanium diarsenide (GeAs2), black phosphorus (BP), gallium telluride (GaTe), silicon phosphide (SiP), and germanium phosphide (GeP).

[0008] As a further preference of the present invention, for the strip-patterned in-plane isotropic two-dimensional layered semiconductor material single crystal, the semiconductor material used is one of molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2).

[0009] As a further preferred embodiment of the present invention, the thickness of the semiconductor channel layer is 5-15 nm.

[0010] As a further preferred embodiment of the present invention, in the stripe pattern, the width of any stripe is 50-100 nm, and the distance between the edges of two adjacent stripes is 50-100 nm.

[0011] As a further preferred embodiment of the present invention, the bottom gate dielectric is one or more of silicon dioxide (SiO2), zirconium dioxide (ZrO2), and hafnium dioxide (HfO2);

[0012] The floating gate layer is a conductor with a thickness of 5-15 nm;

[0013] The tunnel layer medium is an insulator with a thickness of 10-20 nm.

[0014] According to another aspect of the present invention, the present invention provides a method for preparing the above polarization-sensitive neuromorphic vision sensor, comprising the following steps:

[0015] S1: using semiconductor technology to sequentially construct a bottom gate dielectric, a floating gate layer, and a tunneling layer dielectric on the control gate, so as to obtain a structure of control gate, bottom gate dielectric, floating gate layer, and tunneling layer dielectric from bottom to top;

[0016] S2: constructing an in-plane anisotropic semiconductor channel layer on the tunnel layer medium;

[0017] S3: constructing a source electrode and a drain electrode on the surface of the in-plane anisotropic semiconductor channel layer.

[0018] As a further preferred embodiment of the present invention, the in-plane anisotropic semiconductor channel layer is one of an in-plane isotropic two-dimensional layered semiconductor material single crystal with strip patterning and an in-plane anisotropic two-dimensional layered semiconductor material single crystal with strip patterning;

[0019] Correspondingly, step S2 is to construct an in-plane anisotropic semiconductor channel layer on the tunnel layer dielectric by using electron beam lithography (EBL) and inductively coupled plasma (ICP) processes.

[0020] According to another aspect of the present invention, the present invention provides an application of the above-mentioned polarization-sensitive neuromorphic vision sensor in visual sensing, wherein the polarization-sensitive neuromorphic vision sensor is sensitive to polarization information of light and can selectively collect visual information based on the polarization state of light.

[0021] As a further preferred embodiment of the present invention, the polarization-sensitive neuromorphic vision sensor can reflect polarization information in real time through source-drain current.

[0022] Through the above technical scheme conceived by the present invention, compared with the prior art, the polarization-sensitive neuromorphic visual sensor in the present invention includes a control gate, a bottom gate dielectric, a floating gate layer, a tunneling layer dielectric, an in-plane anisotropic semiconductor channel layer, a source electrode and a drain electrode, wherein, similar to the floating gate transistor reported in the prior art, the floating gate layer is used to realize the storage function, and the tunneling layer dielectric is used to realize charge tunneling and charge blocking, but different from the prior art, the present invention can realize the polarized light sensing function and polarization sensitive characteristics of the device as a whole by setting an in-plane anisotropic semiconductor channel layer. The in-plane anisotropic semiconductor channel layer in the present invention can be an in-plane anisotropic two-dimensional layered semiconductor material single crystal, or a strip-patterned in-plane isotropic two-dimensional layered semiconductor material single crystal (strip patterning is to use semiconductor technology to process the material into strips with equal spacing and equal width; the semiconductor channel layer is made to exhibit in-plane anisotropy as a whole through strip patterning), or a strip-patterned in-plane anisotropic two-dimensional layered semiconductor material single crystal.

[0023] Specifically, the present invention can achieve the following beneficial effects:

[0024] (1) The present invention proposes a polarization-sensitive neuromorphic vision sensor that integrates sensing, storage, and computing functions, and can simultaneously process visual information while collecting it, thus avoiding delays caused by visual data transmission;

[0025] (2) The device of the present invention integrates sensing, storage, and computing functions while showing polarization sensitivity, and can selectively collect and process visual information based on the polarization state of light, effectively solving the computational load and interference caused to image recognition tasks by unnecessary information processing caused by redundant data flowing into the back end in the prior art. The present invention inherits the advantages of the floating gate structure of existing floating gate transistors, such as non-volatility, high charge storage density, and frequent erasing and writing, and has stable and reliable performance. At the same time, the device of the present invention is sensitive to polarization information. As a neuromorphic visual sensor, the polarization state changes shown in the photoelectric conversion process are easier to distinguish. The device of the present invention can be used to selectively collect visual information based on the polarization state of light, avoiding the computational pressure and interference caused by redundant information in the sensing stage to subsequent recognition tasks. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a flow chart of a method for preparing a polarization-sensitive neuromorphic vision sensor provided by the present invention.

[0027] Figure 2 It is a vertical structural schematic diagram of a polarization-sensitive neuromorphic vision sensor provided by the present invention.

[0028] Figure 3 is a top view of the polarization-sensitive neuromorphic vision sensor obtained in Example 1 and Example 2 of the present invention, wherein: Figure 3 (a) corresponds to the optical microscope image of the polarization-sensitive neuromorphic vision sensor obtained in Example 1, Figure 3 (b) corresponds to the scanning electron microscope image of the polarization-sensitive neuromorphic vision sensor obtained in Example 2.

[0029] Figure 4 3 is a source-drain current-time characteristic curve of the polarization-sensitive neuromorphic vision sensor obtained in Example 1 as the polarization angle changes.

[0030] Figure 5 It is a comparison diagram of the conductivity-polarization angle relationship curve of the polarization-sensitive neuromorphic visual sensor obtained in Example 1 and the polarization absorption spectrum of the "graphite / h-BN / ReS2" heterostructure.

[0031] Figure 6 Schematic diagram of the energy band structure of the polarization-sensitive neuromorphic vision sensor when polarized light stimulation is applied.

[0032] Figure 7This is a source-drain current-time characteristic curve obtained by testing the polarization-sensitive neuromorphic vision sensor obtained in Example 1 of the present invention at initial phases of 0°, -45°, -90° and -135°.

[0033] Figure 8 These are the imaging results obtained by the polarization-sensitive neuromorphic vision sensor obtained in Example 2 of the present invention at initial phases of 0°, -45°, -90°, and -135°.

[0034] Figure 2 The meanings of the reference numerals in the figure are as follows: 200 is a control gate, 201 is a bottom gate dielectric, 202 is a floating gate layer, 203 is a tunneling layer dielectric, 204 is a semiconductor channel layer, 205 and 206 are a source and a drain, respectively. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0036] In the description of the present invention, it should be noted that the terms "up", "down", "vertical", "horizontal", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0037] In addition, many specific details of the present invention are described below, such as the structure, materials, dimensions, processing technology and techniques of the device, so that the present invention can be more clearly understood. However, as can be understood by those skilled in the art, the present invention can be implemented without following these specific details. Unless otherwise specified below, the various parts of the device can be made of materials known to those skilled in the art, or can be made of materials with similar functions developed in the future.

[0038] Example 1

[0039] like Figure 1 As shown, according to one aspect of the present application, a method for preparing a polarization-sensitive neuromorphic vision sensor is provided, comprising the following steps S1 to S3.

[0040] S1: A control gate 200, a bottom gate dielectric 201, a floating gate layer 202, and a tunneling layer dielectric 203 are sequentially constructed from bottom to top using a semiconductor process.

[0041] During construction, the control gate 200, the bottom gate dielectric 201, the floating gate layer 202, and the tunneling layer dielectric 203 may be constructed from bottom to top using standard semiconductor processes, for example, ALD, thermal oxidation, CVD, etc. may be used.

[0042] The bottom gate dielectric 201 may be any insulating layer such as SiO2, ZrO2, HfO2, or a stack of several of them as the gate dielectric; the floating gate layer 202 may be any conductive material such as graphite, gold (Au), platinum (Pt), nickel (Ni), palladium (Pd), etc.; the tunneling layer dielectric 203 may be any insulating material such as hexagonal boron nitride (h-BN), aluminum oxide (Al2O3), ZrO2, etc.

[0043] In this embodiment, heavily doped P-type single crystal silicon is used as the control gate, SiO2 is used as the bottom gate dielectric, and a graphite floating gate layer and an h-BN tunneling layer dielectric are sequentially constructed thereon.

[0044] Specifically, by mechanically exfoliating block graphite and transferring the obtained thin slice to the SiO2 bottom gate dielectric, a graphite floating gate layer is obtained, and the thickness of the thin slice is 5nm; by mechanically exfoliating block h-BN and transferring the obtained thin slice to the graphite floating gate layer, an h-BN tunneling layer dielectric is obtained, and the thickness of the thin slice is 12nm.

[0045] S2: constructing an in-plane anisotropic semiconductor channel layer 204 on the tunneling layer medium to achieve polarization-sensitive characteristics.

[0046] In this embodiment, a semiconductor channel layer with anisotropy in the ReS2 plane is constructed on the h-BN tunneling layer dielectric.

[0047] Specifically, the bulk ReS2 is mechanically exfoliated and the resulting flakes are transferred to the h-BN tunneling layer medium to obtain a ReS2 semiconductor channel layer with a flake thickness of 5 nm.

[0048] S3: constructing a source electrode 205 and a drain electrode 206 on the surface of the in-plane anisotropic semiconductor channel layer.

[0049] In this embodiment, the source electrode and the drain electrode patterns are defined by EBL, and then the source electrode and the drain electrode are formed by electron beam evaporation.

[0050] The polarization-sensitive neuromorphic vision sensor prepared by the above method has a vertical structure as shown in FIG. Figure 2 shown.

[0051] Example 2

[0052] like Figure 1As shown, according to one aspect of the present application, a method for preparing a polarization-sensitive neuromorphic vision sensor is provided, comprising the following steps S1 to S3.

[0053] S1: A control gate 200, a bottom gate dielectric 201, a floating gate layer 202, and a tunneling layer dielectric 203 are sequentially constructed from bottom to top using a semiconductor process.

[0054] In this embodiment, heavily doped P-type single crystal silicon is used as the control gate, SiO2 is used as the bottom gate dielectric, and a graphite floating gate layer and an h-BN tunneling layer dielectric are sequentially constructed thereon.

[0055] Specifically, a PMMA solution was spin-coated on a copper-based graphene film (size: 1 cm × 1 cm, graphene thickness: 5 nm) (parameters were: 600 rpm, 5 s; 1000 rpm, 10 s; 4000 rpm, 60 s), and dried (parameters: 150 ° C, 5 min); the dried copper-based graphene film was placed in 1 mol·L -1 After etching in FeCl3 solution to completely remove copper and obtain a graphene film suspended on the surface of the solution, use a polished quartz glass sheet to gently drag the graphene film suspended on the surface of the solution out and move it to deionized water to keep it floating, soak it for 10 minutes, then move it to clean deionized water and soak it for 10 minutes, and repeat this 3 times; transfer the graphene film suspended on the surface of the solution from the deionized water to the heavily doped P-type single crystal silicon with SiO2 bottom gate dielectric to obtain a SiO2-based graphene film; after using EBL to define the array pattern, use RIE process to etch the SiO2-based graphene film (etching parameters: gas selected is Ar / O2, flow rate is 40 / 10sccm, power is 50W, 30s) to obtain an arrayed graphite floating gate layer.

[0056] Specifically, the bulk h-BN is mechanically peeled off and the obtained thin slice is transferred to the arrayed graphite floating gate layer so that the h-BN completely covers the graphite floating gate layer to obtain an h-BN tunneling layer medium with a thickness of 14 nm.

[0057] S2: constructing an in-plane anisotropic semiconductor channel layer 204 on the tunneling layer medium to achieve polarization-sensitive characteristics.

[0058] In this embodiment, a semiconductor channel layer with anisotropy in the ReS2 plane is constructed on the h-BN tunneling layer dielectric.

[0059] Specifically, a PMMA solution is spin-coated on a fluorophlogopite-based ReS2 film (size: 1 cm×1 cm, ReS2 thickness: 5 nm) (parameters are: 600 rpm, 5 s; 1000 rpm, 10 s; 4000 rpm, 60 s) and dried (parameters: 150°C, 5 min); the dried fluorophlogopite-based ReS2 film is placed in deionized water and allowed to stand for 24 hours until the ReS2 film is suspended on the surface of the deionized water; the ReS2 film suspended on the surface of the deionized water is transferred to the h-BN tunneling layer medium; after defining the array pattern using EBL, the ReS2 film transferred to the h-BN tunneling layer medium is etched using an inductively coupled plasma (ICP) process (etching parameters: gas selected is Ar / BCl3, flow rate is 36 / 14 sccm, power is 500 W, 20 s) to obtain an arrayed ReS2 semiconductor channel layer.

[0060] S3: constructing a source electrode 205 and a drain electrode 206 on the surface of the in-plane anisotropic semiconductor channel layer.

[0061] In this embodiment, the source electrode and the drain electrode patterns are defined by EBL, and then the source electrode and the drain electrode are formed by electron beam evaporation.

[0062] The polarization-sensitive neuromorphic vision sensor prepared by the above method has a vertical structure as shown in FIG. Figure 2 shown.

[0063] Figure 3 (a) and (b) are respectively an optical microscope image of the polarization-sensitive neuromorphic visual sensor in Example 1 and a scanning electron microscope image of the polarization-sensitive neuromorphic visual sensor in Example 2, wherein the ReS2 semiconductor channel layer and the graphite floating gate layer are completely isolated by the h-BN tunneling layer medium.

[0064] A reading voltage of 0.5 V is applied to both ends of the source electrode and the drain electrode, and a polarized light pulse stimulation is applied to the polarization-sensitive neuromorphic visual sensor in Example 1, with a light wavelength of 532 nm and a light power of 10 mW·cm -2 , the pulse interval is 0.5s, the pulse width is 0.5s, the polarization angle is defined as the angle between the b-axis direction of the ReS2 semiconductor channel layer and the polarization direction (where the b-axis direction is the b-axis direction of the ReS2 crystal). Under the condition of a step length of 30°, a series of source-drain current-time characteristic curves that vary with the polarization angle and gradually accumulate with the number of pulses are obtained, such as Figure 4 This demonstrates that polarization-sensitive neuromorphic vision sensors can respond differentially to polarized light stimuli. Figure 4It shows obvious neural morphology, that is, the device of the present invention has neural morphology and can realize a wider range of artificial vision-related applications. It can selectively extract information based on the polarization state and directly process the information when it is perceived.

[0065] Will Figure 4 The maximum current is extracted and the conductivity-polarization angle relationship is plotted. The results are as follows Figure 5 As shown in the conductivity-polarization angle relationship curve shown in the figure; at the same time, a "graphite / h-BN / ReS2" heterostructure (i.e., a heterostructure composed of graphite, h-BN, and ReS2 from bottom to top) was prepared, and the polarization absorption spectrum of the "graphite / h-BN / ReS2" heterostructure was measured to obtain the absorbance-polarization angle relationship curve. The results are shown in Figure 5 shown; from Figure 5 It is not difficult to see that the conductivity-polarization angle relationship curve and the absorbance-polarization angle relationship curve have the same trend and good matching. The test wavelength of the polarization absorption spectrum is 532nm. The trend of conductivity changing with polarization angle is similar to that of polarization absorption, with a maximum value parallel to the b-axis of the ReS2 semiconductor channel layer and a minimum value perpendicular to it.

[0066] Furthermore, in order to analyze the polarization-dependent photoelectric response produced by the polarization-sensitive neuromorphic vision sensor, its band structure when light stimulation is applied is given, e.g. Figure 6 As shown. Figure 6 As shown in (a) in the figure, when a polarized light pulse acts on the device, electron-hole pairs are formed in the ReS2 semiconductor channel layer. The photogenerated holes undergo Fowler-Nordheim tunneling under the action of confined electrons in the graphite floating gate layer, enter the graphite floating gate layer, and neutralize the negative charge therein. At this time, the modulation effect of the graphite floating gate layer on the ReS2 semiconductor channel layer is weakened. Figure 6 As shown in (b), as the polarization direction gradually deviates from the b-axis of the ReS2 semiconductor channel layer, the concentration of photogenerated holes decreases as the light absorption decreases, so the number of photogenerated holes in Fowler-Nordheim tunneling decreases. In contrast, the floating gate has a stronger modulation effect and a smaller photocurrent.

[0067] In order to demonstrate the ability of the polarization-sensitive neuromorphic visual sensor in Example 1 to selectively extract visual information based on the polarization state, source-drain current-time characteristic curves were obtained by testing at initial phases of 0°, -45°, -90°, and -135°, as shown in FIG. Figure 7As shown. The initial phase is defined as the angle between the b-axis direction of the ReS2 semiconductor channel layer and the polarization direction, and the negative sign indicates that it is opposite to the rotation direction of the polarization; the polarization angle is defined as the angle of rotation from the initial phase. The test results show that under different initial phases, the maximum and minimum values ​​appear in different positions, which is the basis for the polarization-sensitive neuromorphic vision sensor to selectively extract visual information.

[0068] The polarization-sensitive neuromorphic visual sensor given in Example 2 is an array and can be directly applied to imaging, such as Figure 8 As shown in the figure, under a certain initial phase, as the number of pulses increases, the letter pattern is selectively enhanced; for the same number of pulses, a changing initial phase will lead to different letter patterns, which shows that polarization-sensitive neuromorphic vision sensors can selectively extract visual information based on the polarization state and process it synchronously, reducing back-end data input and interference.

[0069] The above embodiments are only examples. For example, the polarization angle can also be defined as the angle between other directions in the plane where the in-plane anisotropic semiconductor channel layer is located (such as the a-axis and c-axis of the crystal, etc.) and the polarization direction; other anisotropic semiconductor materials (such as ReSe2, PdS2, PdSe2, SnS, SnSe, GeS, GeSe, GeAs, GeS2, GeAs2, BP, GaTe, SiP, GeP) can also be used to form an in-plane anisotropic semiconductor channel layer; and for isotropic semiconductor materials (such as MoS2, MoSe2, MoTe2, WS2, WSe2), an in-plane anisotropic semiconductor channel layer can be constructed by forming a strip-patterned in-plane isotropic two-dimensional layered semiconductor material single crystal (the strip pattern is equally spaced and equally wide strips, the width of any strip can be, for example, 50-100nm, and the spacing between the edges of two adjacent strips can be, for example, 50-100nm). In addition, the thickness of the in-plane anisotropic semiconductor channel layer in the present invention, as well as the materials and thicknesses of other layers, can all refer to other settings selected for floating gate transistors (for example, the floating gate layer can also be other conductor materials, with a thickness of, for example, 5-15nm; the tunneling layer dielectric can also be other insulating materials, with a thickness of, for example, 10-20nm).

[0070] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A polarization-sensitive neuromorphic vision sensor, characterized in that From bottom to top, it includes a control gate (200), a bottom gate dielectric (201), a floating gate layer (202), a tunneling layer dielectric (203), and a semiconductor channel layer (204), wherein a source electrode (205) and a drain electrode (206) are also arranged on the semiconductor channel layer (204), wherein: In addition to covering the upper surface of the floating gate layer (202), the tunneling layer dielectric (203) also covers the surrounding side surfaces of the floating gate layer (202); The semiconductor channel layer (204) is an in-plane anisotropic semiconductor channel layer, comprising one of an in-plane anisotropic two-dimensional layered semiconductor material single crystal, a strip-patterned in-plane isotropic two-dimensional layered semiconductor material single crystal, and a strip-patterned in-plane anisotropic two-dimensional layered semiconductor material single crystal; the strip pattern is in the form of strips with equal spacing and equal width.

2. The polarization-sensitive neuromorphic vision sensor according to claim 1, wherein: For the in-plane anisotropic two-dimensional layered semiconductor material single crystal and the strip-patterned in-plane anisotropic two-dimensional layered semiconductor material single crystal, the semiconductor materials they use are one of rhenium disulfide (ReS2), rhenium diselenide (ReSe2), palladium disulfide (PdS2), palladium diselenide (PdSe2), tin sulfide (SnS), tin selenide (SnSe), germanium sulfide (GeS), germanium selenide (GeSe), germanium arsenide (GeAs), germanium disulfide (GeS2), germanium diarsenide (GeAs2), black phosphorus (BP), gallium telluride (GaTe), silicon phosphide (SiP), and germanium phosphide (GeP).

3. The polarization-sensitive neuromorphic vision sensor of claim 1, wherein: For the strip-patterned in-plane isotropic two-dimensional layered semiconductor material single crystal, the semiconductor material used is one of molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), tungsten disulfide (WS2), and tungsten diselenide (WSe2).

4. The polarization-sensitive neuromorphic vision sensor of claim 1, wherein: The thickness of the semiconductor channel layer (204) is 5-15 nm.

5. The polarization-sensitive neuromorphic vision sensor of claim 1, wherein: In the stripe pattern, the width of any stripe is 50-100 nm, and the distance between the edges of two adjacent stripes is 50-100 nm.

6. The polarization-sensitive neuromorphic vision sensor of claim 1, wherein: The bottom gate dielectric (201) is made of one or more of silicon dioxide (SiO2), zirconium dioxide (ZrO2), and hafnium dioxide (HfO2); The floating gate layer (202) is a conductor with a thickness of 5-15 nm; The tunnel layer medium (203) is an insulator with a thickness of 10-20 nm.

7. The method for preparing a polarization-sensitive neuromorphic vision sensor according to any one of claims 1 to 6, characterized in that: The steps include: S1: using semiconductor technology to sequentially construct a bottom gate dielectric, a floating gate layer, and a tunneling layer dielectric on the control gate, so as to obtain a structure of control gate, bottom gate dielectric, floating gate layer, and tunneling layer dielectric from bottom to top; S2: constructing an in-plane anisotropic semiconductor channel layer on the tunnel layer medium; S3: constructing a source electrode and a drain electrode on the surface of the in-plane anisotropic semiconductor channel layer.

8. The preparation method according to claim 7, characterized in that: The in-plane anisotropic semiconductor channel layer is one of a stripe-patterned in-plane isotropic two-dimensional layered semiconductor material single crystal and a stripe-patterned in-plane anisotropic two-dimensional layered semiconductor material single crystal; Correspondingly, step S2 is to construct an in-plane anisotropic semiconductor channel layer on the tunnel layer dielectric by using electron beam lithography (EBL) and inductively coupled plasma (ICP) processes.

9. Application of the polarization-sensitive neuromorphic vision sensor in vision sensing according to any one of claims 1 to 6, characterized in that: The polarization-sensitive neuromorphic vision sensor is sensitive to polarization information of light and can selectively collect visual information according to the polarization state of light.

10. The use according to claim 9, characterized in that: The polarization-sensitive neuromorphic vision sensor can respond to polarization information in real time through source-drain current.

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