Solar cell, manufacturing method thereof and display device

Abstract

The invention discloses a solar cell, a manufacturing method thereof and a display device. The solar cell includes: a transparent substrate; the transparent front electrode is arranged on the surface of the transparent substrate; the insulating grid is arranged on the surface of the transparent front electrode, the insulating grid comprises a plurality of grid stripes, and the grid stripes are arranged in a staggered mode to form a plurality of grid areas which are isolated from one another; the photovoltaic layers are arranged in the grid areas of the insulating grids, and the photovoltaic layer in any grid area is isolated from the photovoltaic layer in the adjacent grid area; the back electrode layer is arranged on the surface of the photovoltaic layer; and the packaging layer is arranged on the surface of the back electrode layer. According to the photovoltaic module, the insulating grids are arranged, the grid areas in the insulating grids are mutually isolated, when the photovoltaic layer is arranged in the grid areas, the grid areas can effectively control the film forming area of the photovoltaic layer, and therefore the film forming quality of the photovoltaic layer is guaranteed.

Description

Technical Field

[0001] The present application relates to the technical field of electronic products, and in particular to a solar cell, a manufacturing method thereof, and a display device. Background Art

[0002] With the rapid development of electronic technology, people are using a large number of various portable and wearable electronic products. In order to improve the user experience of such electronic products, in the product design process, in addition to increasing the capacity of the rechargeable battery to improve the product's endurance, it is also necessary to consider how to solve the power supply emergency plan in an emergency. At present, the only solution to this problem is to configure an additional solar cell for these electronic products. The production and manufacturing of the first generation of crystalline silicon solar cells has a history of several decades. Although its photoelectric conversion efficiency (PCE) has reached 20% to 23% and has been widely used outdoors, this type of battery is made of hard and brittle single crystal silicon or polycrystalline silicon materials, which cannot be bent and patterned at will. There is almost no electrical output under low indoor light intensity. Therefore, it cannot be effectively used in current portable and wearable electronic products. The third generation of solar cells (OPV, PSC) that have risen rapidly in recent years have the opportunity to improve and solve many problems of the above crystalline silicon solar cells, and the efficiency of small-area devices in the laboratory has approached or exceeded that of crystalline silicon solar cells. It is the first choice for external (or embedded) solar cells for wearable and portable electronic products.

[0003] However, although OPV (organic solar cells) and PSC (perovskite solar cells) have broad application prospects, there are still technical difficulties that cannot be overcome in the short term in the development of such cells: that is, the efficiency of such solar cells has dropped rapidly after the area of ​​a single-cell device has increased. This problem is particularly evident in PSC-type solar cell devices. The reason is that whether the perovskite crystal material is formed by a solution method or a thermal evaporation method, the film formation dynamics are unstable during the recrystallization process of the material. This is partly due to the stability of the crystal structure itself. In addition, it will also be affected by the composition of the adjacent carrier transport layer and its surface morphology, causing the perovskite crystal structure to change. Taking ABX3-type perovskite compounds as an example, the stability of the perovskite crystal structure can be predicted by the size of the "tolerance factor" (represented by the letter t), t = (r A +r X ) / 2 1 / 2 (r B +r X ), where r X 、r A and r Bare the radius of each anion and cation respectively. When t is between 0.8 and 1.1, the perovskite compound is in a stable state. When the film forming area increases (>0.5cm 2 ), the film quality of the perovskite material decreases rapidly, the number of defects (compound traps) in the film layer increases sharply, the crystal phase becomes very unstable, and the lattice transition growth or crystal type transformation becomes more serious. When the lattice size grows too fast and exceeds the effective diffusion capacity of the carriers, the carriers will recombine in the photovoltaic active layer and fail. When the perovskite material is formed or annealed above a certain temperature or absorbs water vapor, it is easier for the crystal phase structure to change in a larger area of ​​the photovoltaic active layer. Taking FAPbI3 material as an example, there will be a transition from the black α-FAPbI3 phase (cubic phase crystal structure with photovoltaic characteristics) to the yellow δ-FAPbI3 phase (hexagonal phase crystal structure without photovoltaic characteristics). Summary of the invention

[0004] The present application provides a solar cell, a manufacturing method thereof and a display device to solve the problem that the photovoltaic conversion efficiency of the solar cell decreases rapidly after the area of ​​a single-cell device increases.

[0005] The purpose of this application is achieved through the following technical solutions:

[0006] One embodiment of the present application provides a solar cell, comprising:

[0007] Transparent substrate;

[0008] A transparent front electrode is arranged on the surface of the transparent substrate;

[0009] An insulating grid is arranged on the surface of the transparent front electrode, the insulating grid comprises a plurality of grid stripes, and the grid stripes are arranged in a staggered manner to form a plurality of grid areas isolated from each other;

[0010] A photovoltaic layer is arranged in the grid region of the insulating grid, wherein the photovoltaic layer in any grid region is isolated from the photovoltaic layer in an adjacent grid region;

[0011] a back electrode layer, disposed on the surface of the photovoltaic layer; and

[0012] The encapsulation layer is arranged on the surface of the back electrode layer.

[0013] In some embodiments, the shape of the grid region in the insulating grid includes rectangles, triangles, polygons or circles arranged in an array shape, or different shapes randomly surrounded by free curves.

[0014] In some embodiments, the unit area of ​​the grid region in the insulating grid is 5 mm 2 ~200mm2 between.

[0015] In some embodiments, the cross-sectional shape of the grid stripes in the insulating grid along a direction perpendicular to the transparent substrate is a rectangle, an upright trapezoid, or an inverted trapezoid.

[0016] In some embodiments, the grid stripes in the insulating grid have a cross-sectional height of 100 nm to 800 nm and a cross-sectional width of 3 μm to 200 μm along a direction perpendicular to the transparent substrate.

[0017] In some embodiments, the grid stripes are filled with nano-quantum dot materials, and the optical band gap of the nano-quantum dot materials is between 1.0 eV and 4.5 eV.

[0018] In some embodiments, the nano quantum dot material includes one or more of copper indium sulfide, copper indium zinc sulfide, indium phosphide, gallium arsenide, cadmium selenide, gallium phosphide, cadmium sulfide, zinc telluride, gallium nitride, zinc sulfide, and zinc selenide.

[0019] In some embodiments, a plurality of continuous protrusions or grooves are arranged at the edges of the grid stripes close to the photovoltaic layer.

[0020] In some embodiments, the shape of the protrusion or the groove includes semicircle, trapezoid, triangle or arc.

[0021] In some embodiments, in any grid region, the sum of the areas of the protrusions or the grooves is less than 15% of the area of ​​the photovoltaic layer in the grid region.

[0022] In some embodiments, the solar cell further comprises an auxiliary metal layer;

[0023] The auxiliary metal layer is arranged on the surface, below, or inside the transparent front electrode, and the material of the auxiliary metal layer includes one or more of Ag, Al, Cr, Cu, Au, Mo, Ti, Sn, and Mg metals.

[0024] In some embodiments, a projection of the auxiliary metal layer on the plane where the transparent substrate is located is located within a projection range of the insulating grid on the plane where the transparent substrate is located.

[0025] In some embodiments, the solar cell is an organic solar cell, a perovskite solar cell, or an organic-inorganic hybrid solar cell.

[0026] One embodiment of the present application further provides a method for manufacturing a solar cell, comprising:

[0027] Disposing a transparent front electrode on the surface of the transparent substrate;

[0028] An insulating grid is arranged on the surface of the transparent front electrode, wherein the insulating grid includes a plurality of grid stripes, and the grid stripes are arranged in a staggered manner to form a plurality of grid areas isolated from each other;

[0029] A photovoltaic layer is arranged in the grid region of the insulating grid, and the photovoltaic layer in any grid region is isolated from the photovoltaic layer in the adjacent grid region;

[0030] Disposing a back electrode layer on the surface of the photovoltaic layer; and

[0031] An encapsulation layer is disposed on the surface of the back electrode layer.

[0032] One embodiment of the present application further provides a display device, including:

[0033] display panel; and

[0034] A solar cell as described in any one of the above embodiments;

[0035] The display panel is arranged below the solar cell and is stacked with the solar cell. The solar cell includes a photovoltaic power generation area and a light-transmitting area. The light-transmitting area overlaps with a display area of ​​the display panel.

[0036] Compared with the prior art, the solar cell provided by the present application has the following advantages and beneficial effects:

[0037] In the solar cell provided in the embodiment of the present application, an insulating grid is provided on the surface of the transparent front electrode, and the grid stripes of the insulating grid are arranged in an interlaced manner to form a plurality of mutually isolated grid regions. When preparing the photovoltaic layer, the photovoltaic layer will fall into the grid region of the insulating grid, so that the photovoltaic layer in any grid region is isolated from the photovoltaic layer in the adjacent grid region. In other words, the area of ​​each independent photovoltaic layer will be limited by the area of ​​the grid region of the insulating grid. By providing the insulating grid, the insulating grid can avoid the problem that the film quality of the photovoltaic layer material decreases rapidly when the film forming area increases. The good film quality of the photovoltaic layer is conducive to the effective separation and transmission of carriers in the photovoltaic layer, thereby effectively improving the photovoltaic conversion efficiency of the photovoltaic layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 is a schematic diagram of the structure of a solar cell provided in one of the embodiments of the present application;

[0039] Figure 2 yes Figure 1 Schematic diagram of the cross section of the solar cell along the AA direction;

[0040] Figure 3 yes Figure 1 A schematic diagram of a structure in which a solar cell is provided with protrusions on the side of a grid stripe;

[0041] Figure 4 for Figure 3 An enlarged schematic diagram of the E1 region of the solar cell;

[0042] Figure 5 yes Figure 1 A schematic diagram of a structure in which a solar cell is provided with protrusions of another shape on the side of the grid stripes;

[0043] Figure 6 yes Figure 5 An enlarged schematic diagram of the E2 region of the solar cell;

[0044] Figure 7 yes Figure 1 A schematic diagram of a structure in which a solar cell is provided with a protrusion of a certain shape on the side of the grid stripes;

[0045] Figure 8 yes Figure 7 An enlarged schematic diagram of the E3 region of the solar cell;

[0046] Fig. 9 yes Figure 1 A schematic diagram of a structure in which a grid-shaped auxiliary metal layer is provided for a solar cell;

[0047] Fig.10 for Fig. 9 Schematic diagram of the cross section of the solar cell along the BB direction;

[0048] Fig.11 It is a schematic diagram of the structure of a solar cell provided in another embodiment of the present application. DETAILED DESCRIPTION

[0049] The present application will be further described in detail below in conjunction with examples, but the implementation methods of the present application are not limited thereto.

[0050] See also Figure 1 to Figure 2 One embodiment of the present application provides a solar cell 100. In this embodiment, the solar cell 100 may be an organic solar cell, a perovskite solar cell, a nano-quantum dot solar cell, or an organic-inorganic hybrid solar cell. The solar cell 100 includes a transparent substrate 110, a transparent front electrode 120, an insulating grid 130, a photovoltaic layer 140, a back electrode layer 150, and an encapsulation layer 160.

[0051] The transparent substrate 110 includes but is not limited to rigid materials such as glass, quartz, sapphire, or flexible transparent PET (polyethylene terephthalate), CPI (transparent polyimide), PEN (polyethylene naphthalate), COP (cycloolefin polymer), PC (polycarbonate), PMMA (polymethyl methacrylate) and other organic polymer materials.

[0052] The transparent front electrode 120 is disposed on the surface of the transparent substrate 110. In this embodiment, the transparent front electrode 120 is made of materials including but not limited to TCO, nanosilver, graphene or carbon nanotubes.

[0053] The insulating grid 130 is disposed on the surface of the transparent front electrode 120. The insulating grid 130 includes a plurality of grid stripes 131. The grid stripes 131 are arranged in a staggered manner to form a plurality of grid regions 132 isolated from each other.

[0054] The photovoltaic layer 140 is disposed in the grid region 132 of the insulating grid 130. The photovoltaic layer 140 in any grid region 132 is isolated from the photovoltaic layer 140 in an adjacent grid region 132.

[0055] The back electrode layer 150 is disposed on a surface of the photovoltaic layer 140 .

[0056] The encapsulation layer 160 is disposed on a surface of the back electrode layer 150 .

[0057] In the solar cell 100 provided in the above embodiment, by setting an insulating grid 130 on the surface of the transparent front electrode 120, and making the grid stripes 131 of the insulating grid 130 arranged in an interlaced manner to form a plurality of mutually isolated grid regions 132, when preparing the photovoltaic layer 140, the photovoltaic layer 140 will fall into the grid region 132 of the insulating grid 130, so that the photovoltaic layer 140 in any grid region 132 is isolated from the photovoltaic layer 140 in the adjacent grid region 132. In other words, the area of ​​each independent photovoltaic layer 140 will be limited by the area of ​​the grid region 132 of the insulating grid 130. By setting the insulating grid 130, the insulating grid 130 can avoid the problem that the film quality of the photovoltaic layer 140 material decreases rapidly when the film forming area increases. The good film quality of the photovoltaic layer 140 is conducive to the effective separation and transmission of carriers in the photovoltaic layer 130, thereby effectively improving the photovoltaic conversion efficiency of the photovoltaic layer 130.

[0058] In this embodiment, the photovoltaic layer 140 includes at least one group of electron (or hole) transport layer, photovoltaic active layer, and hole (or electron) transport layer stacked in sequence. Preferably, the insulating grid 130 is arranged on the surface of the electron (or hole) photovoltaic layer close to the transparent front electrode 120. As needed, the insulating grid 130 is made of transparent photoresist.

[0059] In some embodiments, the shape of the grid region 132 in the insulating grid 130 includes rectangles, triangles, polygons or circles arranged in an array shape, or different shapes randomly surrounded by free curves. As needed, the unit area of ​​the grid region 132 in the insulating grid 130 is 5mm 2 ~200mm 2 In this embodiment, the grid region 132 in the insulating grid 130 is in a rectangular shape. A plurality of rectangular grid regions 132 are arranged in an array.

[0060] In this embodiment, by controlling the unit area of ​​the grid region 132 in the insulating grid 130 to 5 mm 2 ~200mm 2 Since the photovoltaic layer 140 is disposed in the grid region 132 of the insulating grid 130, at this time, the unit area of ​​any photovoltaic layer 140 is also controlled within 5 mm 2 ~200mm 2 The appropriate film-forming area of ​​the photovoltaic layer 140 can avoid the problem of rapid decline in the film-forming quality of the photovoltaic layer when the film-forming area is too large. In fact, when the film-forming area is too large, the number of defects in the film layer increases sharply, the crystal phase becomes very unstable, and the occurrence of lattice transition growth or crystal type transformation becomes more serious. When the lattice size grows too fast and exceeds the effective diffusion capacity of the carriers, the carriers will recombine in the photovoltaic active layer and fail. The unit area of ​​the photovoltaic layer 140 is also controlled at 5mm 2 ~200mm 2 The above problems can be effectively avoided, thereby improving the photovoltaic conversion efficiency of the photovoltaic layer 140. As required, the film thickness of the photovoltaic layer 140 is less than the film thickness of the grid stripes 131 in the insulating grid 130, so that the photovoltaic layer 140 in any grid area 132 is isolated from the photovoltaic layer 140 in the adjacent grid area 132.

[0061] In some embodiments, the cross-sectional shape of the grid stripes 131 in the insulating grid 130 along the direction perpendicular to the transparent substrate 110 is a rectangle, an upright trapezoid, or an inverted trapezoid. As required, the cross-sectional height of the grid stripes 131 in the insulating grid 130 along the direction perpendicular to the transparent substrate 110 is 100 nm to 800 nm, and the cross-sectional width is 3 μm to 200 μm.

[0062] In this embodiment, by making the cross-sectional shape of the grid stripes 131 in the direction perpendicular to the transparent substrate 110 into a rectangle, an upright trapezoid or an inverted trapezoid, the grid stripes 131 can effectively isolate two adjacent photovoltaic layers 140, thereby achieving the purpose of controlling the area of ​​the photovoltaic layer 140 by using the insulating grid 130. Further, by setting the cross-sectional height of the grid stripes 131 in the direction perpendicular to the transparent substrate 110 between 100nm and 800nm, and setting the cross-sectional width between 3μm and 200μm, the grid stripes 131 can also achieve the purpose of isolating two adjacent photovoltaic layers 140.

[0063] In some embodiments, the grid stripes 131 are filled with nano-quantum dot materials, and the optical band gap of the nano-quantum dot materials is between 1.0 eV and 4.5 eV. As needed, the nano-quantum dot materials include one or more of copper indium sulfide (CuInS2), copper indium zinc sulfide (ZnCuInS), indium phosphide (InP), gallium arsenide (GaAs), cadmium selenide (CdSe), gallium phosphide (GaP), cadmium sulfide (CdS), zinc telluride (ZnTe), gallium nitride (GaN), zinc sulfide (ZnS), and zinc selenide (ZnSe).

[0064] By filling the grid stripes 131 with nano-quantum dot materials and making the optical band gap of the nano-quantum dot materials between 1.0 eV and 4.5 eV, when the grid stripes 131 are irradiated with ambient light, the nano-quantum dot materials can absorb the ambient light and then stimulate the radiation of light. The stimulated radiation of light can be absorbed by the photovoltaic active material in the photovoltaic layer 140, thereby increasing the photoelectric energy conversion efficiency of the solar cell 100. In other words, by filling the grid stripes 131 with nano-quantum dot materials, this method can make full use of the light absorption of the grid stripes 131 and increase the photoelectric energy conversion efficiency of the solar cell 100. In this embodiment, the grid stripes 131 can be mixed with nano-quantum dot materials with a weight percentage of no more than 20%. When the incident photon energy is greater than the energy band gap of the nano-quantum dot material, there is a chance to excite the nano-quantum dot particles, causing them to emit light with a wavelength greater than the wavelength of the incident light. Most of the light emitted by these quantum dots can be emitted from the side and enter the interior of the photovoltaic layer 140, so that the photovoltaic layer 140 absorbs it again and generates excitons. At the same time, a portion of the light directed toward the metal back electrode layer 150 will be reflected back from the surface of the metal back electrode layer 150, and re-enter the grid stripes 131 or obliquely enter the photovoltaic layer 140. The light re-entering the grid stripes 131 will again excite the nano-quantum dots and the photovoltaic layer 140 to generate more excitons, thereby improving the photoelectric conversion efficiency.

[0065] In some embodiments, the edges of the grid stripes close to the photovoltaic layer are provided with a plurality of continuous protrusions or grooves. Specifically, the shapes of the protrusions or grooves include semicircular, trapezoidal, triangular or arc-shaped. As required, in any grid region, the sum of the areas of the protrusions or grooves is less than 15% of the area of ​​the photovoltaic layer in the grid region.

[0066] Please also see Figure 3 and Figure 4 In this embodiment, a plurality of continuous protrusions 133 are provided at the edge of the grid stripes 131 close to the photovoltaic layer 140. Specifically, the protrusions 133 are semicircular in shape. When the nano-quantum dot material in the grid stripes 131 is stimulated to radiate light after absorbing ambient light, the semicircular protrusions 133 can maximize the transmission of the light stimulated to radiate by the nano-quantum dot material in the horizontal direction to the photovoltaic layer 140 in the grid region 132, thereby making full use of the light absorption of the grid stripes 131 and increasing the photoelectric energy conversion efficiency of the solar cell 100.

[0067] It is understandable that the shape of the protrusion is not limited to a semicircle. Figure 5 and Figure 6In this embodiment, a plurality of continuous protrusions 133 are provided at the edge of the grid stripes 131 close to the photovoltaic layer 140. Specifically, the protrusions 133 are in the shape of a triangle. When the nano-quantum dot material in the grid stripes 131 is stimulated to radiate light after absorbing ambient light, the triangular protrusions 133 can maximize the transmission of the light stimulated to radiate by the nano-quantum dot material in the horizontal direction to the photovoltaic layer 140 in the grid region 132, thereby making full use of the light absorption of the grid stripes 131 and increasing the photoelectric energy conversion efficiency of the solar cell 100.

[0068] It is understandable that the shape of the protrusion is not limited to a triangle. Figure 7 and Figure 8 In this embodiment, a plurality of continuous protrusions 133 are provided at the edge of the grid stripes 131 close to the photovoltaic layer 140. Specifically, the protrusions 133 are in a trapezoidal shape. When the nano-quantum dot material in the grid stripes 131 is stimulated to radiate light after absorbing ambient light, the trapezoidal protrusions 133 can maximize the transmission of the light stimulated to radiate by the nano-quantum dot material in the horizontal direction to the photovoltaic layer 140 in the grid region 132, thereby making full use of the light absorption of the grid stripes 131 and increasing the photoelectric energy conversion efficiency of the solar cell 100.

[0069] If necessary, in order to reduce the surface resistance of the transparent front electrode 120, an auxiliary metal layer may be disposed on the surface, below or inside the transparent front electrode 120. The auxiliary metal layer is disposed at the periphery of the solar cell 100 and in the effective power generation area.

[0070] Please also see Figures 1 to 3 , Figure 5 as well as Figure 7 In some embodiments, the solar cell 100 further includes an auxiliary metal layer 170 .

[0071] The auxiliary metal layer 170 is disposed on the surface, below, or inside the transparent front electrode 120. The material of the auxiliary metal layer 170 includes one or more of Ag, Al, Cr, Cu, Au, Mo, Ti, Sn, and Mg. In this embodiment, the auxiliary metal layer 170 is disposed below the transparent front electrode 120. The auxiliary metal layer 170 is used to improve the charge collection and conduction capabilities of the transparent front electrode 120.

[0072] It can be understood that the shape and location of the auxiliary metal layer 170 are not limited to the above embodiments.

[0073] Please also see Fig. 9 and Fig.10 , the auxiliary metal layer 170 is arranged in a grid shape, which includes a plurality of metal stripes arranged in parallel or staggered. The auxiliary metal layer 170 is arranged in a grid shape, which helps to further improve the charge collection and conduction capabilities of the transparent front electrode 120. In some embodiments, when the auxiliary metal layer 170 is arranged in a grid shape, the projection of the auxiliary metal layer 170 on the plane where the transparent substrate 110 is located is located within the projection range of the insulating grid 130 on the plane where the transparent substrate 110 is located. That is to say, when the solar cell 100 is provided with an auxiliary metal layer 170 in a grid shape, the insulating grid stripes 131 are arranged to overlap with the grid structure of the auxiliary metal layer 170 as much as possible. The purpose of such arrangement is that the auxiliary metal layer 170 is generally a non-transparent structure, and when light is incident from one side of the transparent front electrode 120, it is mostly reflected or scattered when encountering the metal grid, and cannot be absorbed by the photovoltaic layer 140. Therefore, the significance of the overlapping arrangement is to retain the area of ​​the light transmission region of the transparent front electrode 120 as much as possible, so that more light can be effectively absorbed by the active layer material in the photovoltaic layer 140. When light passes through the transparent front electrode 120 and enters the photovoltaic layer 140, the light with energy greater than the energy band gap of the photovoltaic layer 140 can excite the active material in the photovoltaic layer 140 to form excitons, which are further separated into electrons and holes, and then move to the positive and negative electrodes through the carrier transport layer, and are finally collected and transmitted by the positive and negative electrodes respectively to form current.

[0074] As required, a resin or glue having the function of absorbing water and oxygen is further included between the encapsulation layer 160 and the back electrode layer 150. The material of the back electrode layer 150 is composed of one or more of metals Ag, Al, Cr, Cu, Au, Mg, Mo, Ti, Sn, or one or more of high-conductivity polymers, TCO, nanosilver, graphene, and carbon nanotubes.

[0075] As required, the solar cell 100 further includes a back electrode bonding block 180 . The back electrode layer 150 is connected to the back electrode bonding block 180 .

[0076] It can be understood that the structure of the insulating grid is not limited to the above embodiments.

[0077] Please also see Fig.11 Another embodiment of the present application provides a solar cell 200. In this embodiment, the solar cell 200 may be an organic solar cell, a perovskite solar cell, a nano-quantum dot solar cell, or an organic-inorganic hybrid solar cell. The solar cell 200 includes a transparent substrate 210, a transparent front electrode 220, an insulating grid 230, a photovoltaic layer 240, a back electrode layer 250, and an encapsulation layer 260.

[0078] The transparent substrate 210 includes but is not limited to rigid materials such as glass, quartz, sapphire, or flexible transparent PET (polyethylene terephthalate), CPI (transparent polyimide), PEN (polyethylene naphthalate), COP (cycloolefin polymer), PC (polycarbonate), PMMA (polymethyl methacrylate) and other organic polymer materials.

[0079] The transparent front electrode 220 is disposed on the surface of the transparent substrate 210. In this embodiment, the transparent front electrode 120 is made of materials including but not limited to TCO, nanosilver, graphene or carbon nanotubes.

[0080] The insulating grid 230 is disposed on the surface of the transparent front electrode 220. The insulating grid 230 includes a plurality of grid stripes 231. The grid stripes 231 are arranged in a staggered manner to form a plurality of grid regions 232 isolated from each other.

[0081] The photovoltaic layer 240 is disposed in the grid region 232 of the insulating grid 230. The photovoltaic layer 240 in any grid region 232 is isolated from the photovoltaic layer 240 in an adjacent grid region 232.

[0082] The back electrode layer 250 is disposed on a surface of the photovoltaic layer 240 .

[0083] The encapsulation layer 260 is disposed on the surface of the back electrode layer 250 .

[0084] Different from the previous embodiment, in this embodiment, the grid region 232 in the insulating grid 230 is in the shape of a hexagon arranged in an array shape. As required, the unit area of ​​the grid region 232 in the insulating grid 230 is 5 mm 2 ~200mm 2 The plurality of hexagonal grid regions 232 are arranged in an array.

[0085] One embodiment of the present application further provides a method for manufacturing a solar cell, comprising:

[0086] Disposing a transparent front electrode on the surface of the transparent substrate;

[0087] An insulating grid is arranged on the surface of the transparent front electrode, wherein the insulating grid includes a plurality of grid stripes, and the grid stripes are arranged in a staggered manner to form a plurality of grid areas isolated from each other;

[0088] A photovoltaic layer is arranged in the grid region of the insulating grid, and the photovoltaic layer in any grid region is isolated from the photovoltaic layer in the adjacent grid region;

[0089] Disposing a back electrode layer on the surface of the photovoltaic layer; and

[0090] An encapsulation layer is disposed on the surface of the back electrode layer.

[0091] One embodiment of the present application further provides a display device, including:

[0092] display panel; and

[0093] A solar cell as described in any one of the above embodiments;

[0094] The display panel is arranged below the solar cell and is stacked with the solar cell. The solar cell comprises a photovoltaic power generation area and a light-transmitting area. The light-transmitting area overlaps with the display area of ​​the display panel.

[0095] In this embodiment, the display panel is arranged below the solar cell and is stacked with the solar cell. The structure of the solar cell includes a photovoltaic power generation area and a light-transmitting area. The transparent area overlaps with the display area (VA area) of the display panel. The visible light transmittance of the light-transmitting area of ​​the solar cell is between 40% and 90%. The light-transmitting area of ​​the solar cell is made by a graphical process.

[0096] The display device is arranged below the solar cell and bonded to the solar cell packaging back cover through transparent OCR or OCA. The structure of the display device includes an upper substrate and a lower substrate, and the display image is presented to the observer from the upper substrate side. In order to further reduce the overall thickness of the product, the entire display can also be used as the solar cell packaging back cover arranged above it, the upper substrate of the display is arranged on the side close to the photovoltaic layer of the solar cell, and the lower substrate of the display is arranged on the side away from the photovoltaic layer of the solar cell.

[0097] The above embodiments are preferred implementation modes of the present application, but the implementation modes of the present application are not limited to the embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present application should be equivalent replacement methods and are included in the protection scope of the present application.

Claims

1. A solar cell, characterized in that: include: Transparent substrate; A transparent front electrode is arranged on the surface of the transparent substrate; An insulating grid is arranged on the surface of the transparent front electrode, the insulating grid comprises a plurality of grid stripes, and the grid stripes are arranged in a staggered manner to form a plurality of grid areas isolated from each other; A photovoltaic layer is arranged in the grid region of the insulating grid, wherein the photovoltaic layer in any grid region is isolated from the photovoltaic layer in an adjacent grid region; a back electrode layer, disposed on the surface of the photovoltaic layer; and The encapsulation layer is arranged on the surface of the back electrode layer.

2. The solar cell according to claim 1, characterized in that: The shapes of the grid regions in the insulating grid include rectangles, triangles, polygons or circles arranged in an array shape, or different shapes randomly surrounded by free curves.

3. The solar cell according to claim 2, characterized in that: The unit area of ​​the grid region in the insulating grid is 5 mm 2 ~200mm 2 between.

4. The solar cell according to claim 1, characterized in that The cross-sectional shape of the grid stripes in the insulating grid along a direction perpendicular to the transparent substrate is a rectangle, an upright trapezoid, or an inverted trapezoid.

5. The solar cell according to claim 4, characterized in that The grid stripes in the insulating grid have a cross-sectional height of 100 nm to 800 nm and a cross-sectional width of 3 μm to 200 μm along a direction perpendicular to the transparent substrate.

6. The solar cell according to any one of claims 1 to 5, characterized in that: The grid stripes are filled with nano-quantum dot materials, and the optical band gap of the nano-quantum dot materials is between 1.0 eV and 4.5 eV.

7. The solar cell according to claim 6, characterized in that: The nano quantum dot material includes one or more of copper indium sulfide, copper indium zinc sulfide, indium phosphide, gallium arsenide, cadmium selenide, gallium phosphide, cadmium sulfide, zinc telluride, gallium nitride, zinc sulfide, and zinc selenide.

8. The solar cell according to claim 6, characterized in that: The edges of the grid stripes close to the photovoltaic layer are provided with a plurality of continuous protrusions or grooves.

9. The solar cell according to claim 8, characterized in that The shape of the protrusion or the groove includes semicircle, trapezoid, triangle or arc.

10. The solar cell according to claim 9, characterized in that: In any grid region, the sum of the areas of the protrusions or the grooves is less than 15% of the area of ​​the photovoltaic layer in the grid region.

11. The solar cell according to claim 1, characterized in that: Also comprising an auxiliary metal layer; The auxiliary metal layer is arranged on the surface, below, or inside the transparent front electrode, and the material of the auxiliary metal layer includes one or more of Ag, Al, Cr, Cu, Au, Mo, Ti, Sn, and Mg metals.

12. The solar cell according to claim 1, characterized in that The projection of the auxiliary metal layer on the plane where the transparent substrate is located is located within the projection range of the insulating grid on the plane where the transparent substrate is located.

13. The solar cell according to claim 1, characterized in that The solar cell is an organic solar cell, a perovskite solar cell or an organic-inorganic hybrid solar cell.

14. A method for manufacturing a solar cell, characterized in that: include: Disposing a transparent front electrode on the surface of the transparent substrate; An insulating grid is arranged on the surface of the transparent front electrode, wherein the insulating grid includes a plurality of grid stripes, and the grid stripes are arranged in a staggered manner to form a plurality of grid areas isolated from each other; A photovoltaic layer is arranged in the grid region of the insulating grid, and the photovoltaic layer in any grid region is isolated from the photovoltaic layer in the adjacent grid region; Disposing a back electrode layer on the surface of the photovoltaic layer; and An encapsulation layer is disposed on the surface of the back electrode layer.

15. A display device, characterized in that: include: Display panel; as well as The solar cell according to any one of claims 1 to 13; The display panel is arranged below the solar cell and is stacked with the solar cell. The solar cell comprises a photovoltaic power generation area and a light-transmitting area. The light-transmitting area overlaps with the display area of ​​the display panel.

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