Organic light emitting diode device, display panel and display device

Abstract

The invention discloses an organic light emitting diode device, a display panel and a display device. The organic light emitting diode device comprises a first electrode; a second electrode; the N-type connecting layer is arranged between the first electrode and the second electrode; the N-type connecting layer is in contact with the first electron transport layer, the N-type connecting layer is arranged on one side, deviating from the first electrode, of the first electron transport layer, and electrons flow to the first electron transport layer from the N-type connecting layer; wherein the N-type connection layer is formed by doping a first material and a second material, the first electron transport layer is made of the first material, the first material is an N-type semiconductor material, and the second material is an active metal material. According to the invention, the N-type connection layer and the first electron transmission layer are used to replace the original three thin film layers of the hole blocking layer, the electron transmission layer and the N-type connection layer. Therefore, the number of original thin film layers is reduced, the number of metal mask plates and the number of thermal evaporation chambers are reduced, the production efficiency is improved, and the cost is also reduced.

Description

Technical Field

[0001] The present application relates to the field of light emitting diodes, and in particular to an organic light emitting diode device, a display panel and a display apparatus. Background Art

[0002] Active matrix organic light emitting diode AMOLED displays currently used in the market generally use top-emitting OLED devices. The basic structure of top-emitting OLED devices is to deposit various functional layers on the anode in sequence. However, the number of existing functional layers is large, which leads to a large number of layers that need to be deposited, so the process is relatively complicated. Summary of the invention

[0003] The object of the present application is to provide an organic light emitting diode device which can reduce the number of layers that need to be deposited.

[0004] According to a first aspect of an embodiment of the present application, an organic light emitting diode device is provided, the organic light emitting diode device comprising:

[0005] a first electrode, the first electrode being used to generate electrons;

[0006] a second electrode, the second electrode being used to generate electric charge;

[0007] An N-type connection layer, the N-type connection layer is disposed between the first electrode and the second electrode;

[0008] A first electron transport layer, wherein the N-type connection layer is arranged in contact with the first electron transport layer, and the N-type connection layer is arranged on a side of the first electron transport layer away from the first electrode, and electrons flow from the N-type connection layer to the first electron transport layer;

[0009] Among them, the N-type connection layer is doped with a first material and a second material, the first electron transport layer is made of a first material, the first material is an N-type semiconductor material, and the second material is an active metal material. The N-type connection layer and the first electron transport layer are used as a whole to block electrons from passing through in a direction from the first electrode to the second electrode.

[0010] In some embodiments, the organic light emitting diode device further comprises a charge generation layer, the charge generation layer comprising the N-type connection layer and the P-type connection layer contacting each other, the N-type connection layer being closer to the first electrode layer than the P-type connection layer;

[0011] The organic light emitting diode device further comprises a light emitting unit, the number of the light emitting units is multiple, and a charge generation layer is arranged between adjacent light emitting units.

[0012] In some embodiments, the light emitting unit includes a first light emitting unit;

[0013] The first light-emitting unit includes a first hole injection layer, a first hole transport layer, and a first light-emitting layer arranged along a first direction, one end of the first hole transport layer is connected to the first hole injection layer, the other end of the first hole transport layer is connected to the first light-emitting layer, and one end of the first light-emitting layer facing away from the first hole transport layer is connected to the first electron transport layer;

[0014] The first direction is from the first electrode to the second electrode.

[0015] In some embodiments, the light emitting unit further comprises a second light emitting unit, and the first light emitting unit and the second light emitting unit are connected to each other through the charge generation layer;

[0016] The second light-emitting unit includes a second hole transport layer, a second light-emitting layer and a second electron transport layer arranged along the first direction, one end of the second light-emitting layer is connected to the second hole transport layer, and the other end of the second light-emitting layer is connected to the second electron transport layer;

[0017] The first direction is from the first electrode to the second electrode.

[0018] In some embodiments, the mass ratio of the first material to the second material in the N-type connection layer is less than or equal to 99:1 and greater than or equal to 97:3.

[0019] In some embodiments, the active metal material is metal Li and / or metal Yb.

[0020] According to a second aspect of an embodiment of the present application, a display panel is provided, wherein the display panel includes the organic light emitting diode device described in the above embodiment.

[0021] In some embodiments, the display panel includes a plurality of organic light emitting diode devices, each of the organic light emitting diode devices has a first electrode for generating charges, and at least two adjacent organic light emitting diode devices have different heights of the first electrodes.

[0022] In some embodiments, the display panel includes at least one pixel unit, the pixel unit includes a plurality of organic light emitting diode devices, the plurality of organic light emitting diode devices include at least a first light emitting device, a second light emitting device and a third light emitting device, the first light emitting device can emit light in a first wavelength range, the second light emitting device can emit light in a second wavelength range, and the third light emitting device can emit light in a third wavelength range; a minimum value of the first wavelength range is greater than a maximum value of the second wavelength range, and a minimum value of the second wavelength range is greater than a maximum value of the third wavelength range;

[0023] The first light emitting device, the second light emitting device and the third light emitting device all include a first electrode, and the heights of the first electrodes of the first light emitting device, the second light emitting device and the third light emitting device are different.

[0024] In some embodiments, the first electrode includes a metal layer, the first light-emitting device includes a first organic light-emitting layer, the second light-emitting device includes a second organic light-emitting layer, the third light-emitting device includes a third organic light-emitting layer, the first organic light-emitting layer is at a first distance from the metal layer, the second organic light-emitting layer is at a second distance from the metal layer, and the third organic light-emitting layer is at a third distance from the metal layer;

[0025] The first distance is greater than the second distance, and the second distance is greater than the third distance.

[0026] In some embodiments, the first electrode includes a first transparent conductive layer, a metal layer, and a second transparent conductive layer stacked in sequence, the second transparent conductive layer is disposed at one end of the metal layer close to the first electron transport layer, and the first transparent conductive layer of the first light-emitting device, the second light-emitting device, and the third light-emitting device have the same height;

[0027] The height of the second transparent conductive layer of the first light emitting device is greater than that of the second transparent conductive layer of the second light emitting device, and the height of the second transparent conductive layer of the second light emitting device is greater than that of the second transparent conductive layer of the third light emitting device.

[0028] In some embodiments, the height of the second transparent conductive layer of the first light-emitting device is greater than or equal to 5 nm and less than or equal to 15 nm; and / or,

[0029] The height of the second transparent conductive layer of the second light emitting device is greater than or equal to 40 nm and less than or equal to 60 nm; and / or,

[0030] The height of the second transparent conductive layer of the third light emitting device is greater than or equal to 70 nm and less than or equal to 110 nm.

[0031] In some embodiments, the height of the second transparent conductive layer of the first light-emitting device is greater than or equal to 200 nm and less than or equal to 260 nm; and / or,

[0032] The height of the second transparent conductive layer of the second light emitting device is greater than or equal to 300 nm and less than or equal to 370 nm; and / or,

[0033] The height of the second transparent conductive layer of the third light emitting device is greater than or equal to 400 nm and less than or equal to 480 nm.

[0034] According to a third aspect of an embodiment of the present application, a display device is provided, comprising the display panel described in the above embodiment.

[0035] The organic light-emitting diode device proposed in the present application uses two thin film layers, namely, the N-type connection layer and the first electron transport layer, which are in contact with each other, to replace the original three thin film layers, namely, the hole blocking layer, the electron transport layer and the N-type connection layer. Therefore, the number of original thin film layers is reduced, the number of metal masks and thermal evaporation chambers is reduced, the production efficiency is improved, and the cost is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0037] Figure 1 The figure is a schematic diagram of the structure of an existing organic light emitting diode device.

[0038] Figure 2 FIG. 4 is a schematic structural diagram of an organic light emitting diode device according to an embodiment of the present application.

[0039] Figure 3 FIG. 4 is a schematic diagram of the structure of a pixel unit according to an embodiment of the present application.

[0040] Figure 4 FIG. 4 is a schematic structural diagram of a pixel unit according to another embodiment of the present application.

[0041] Description of reference numerals:

[0042] 100-first electrode

[0043] 110-first transparent conductive layer

[0044] 120-Metal layer

[0045] 130-second transparent conductive layer

[0046] 200- Second electrode

[0047] 300-first light emitting unit

[0048] 310-first hole injection layer

[0049] 320-first hole transport layer

[0050] 330-first light emitting layer

[0051] 340-First electron transport layer

[0052] 400-Charge Generation Layer

[0053] 410-N type connection layer

[0054] 420-P type connection layer

[0055] 500- Second light emitting unit

[0056] 510- Second hole transport layer

[0057] 520-Second light emitting layer

[0058] 530-Second electron transport layer

[0059] 600-first light emitting device

[0060] 610-first light emitting layer

[0061] 700- second light emitting device

[0062] 710- Second light-emitting layer

[0063] 800-third light emitting device

[0064] 810-third luminous layer

[0065] 900-pixel definition layer

[0066] H1-First Distance

[0067] H2-Second Distance

[0068] H3-Third Distance

[0069] 10-Anode

[0070] 20-Cathode

[0071] 30-Hole injection layer

[0072] 40-Hole transport layer (1)

[0073] 50-hole transport layer (2)

[0074] 60-luminous layer

[0075] 70-hole blocking layer

[0076] 80-Electron Transport Layer

[0077] X-leakage path

[0078] H-First direction DETAILED DESCRIPTION

[0079] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0080] The terms used in this application are only for the purpose of describing specific embodiments and are not intended to limit this application. Unless otherwise defined, the technical terms or scientific terms used in this application should be understood by people with ordinary skills in the field to which this application belongs. The words "one" or "one" and the like used in this application specification and claims do not indicate a quantitative limitation, but indicate the existence of at least one. "Multiple" means two or more. "Including" or "including" and the like mean that the elements or objects appearing in front of "including" or "including" include the elements or objects listed after "including" or "including" and their equivalents, and do not exclude other elements or objects. "Connected" or "connected" and the like are not limited to physical or mechanical connections, and can include electrical connections, whether direct or indirect. "On" and / or "below" and the like are only for the convenience of explanation, and are not limited to a position or a spatial orientation. The singular forms of "one", "said" and "the" used in this application specification and the attached claims are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0081] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0082] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0083] The use of "suitable for" or "configured to" in this specification is meant to be open and inclusive language that does not exclude devices being adapted or configured to perform additional tasks or steps.

[0084] The triangles, rectangles, trapezoids, pentagons or hexagons in this specification are not in the strict sense, and may be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances, and there may be chamfers, arc edges and deformations.

[0085] The term "about" in this application refers to a numerical value that is not strictly limited to a limit and allows for process and measurement errors.

[0086] At present, electroluminescent devices have developed from the simplest sandwich structure to a more complex multi-layer organic film stack structure. Figure 1 As shown, an OLED electroluminescent device has a light-emitting unit including a hole injection layer 30 (HIL, Hole Injection Layer), a hole transport layer (1) 40 (HTL-1, Hole Tranport Layer-1), a hole transport layer (2) 50 (HTL-2, Hole Tranport Layer-2), a light-emitting layer 60 (EML, Emission layer), a hole blocking layer 70 (HBL, Hole Block Layer) and an electron transport layer 80 (ETL, Electron Transport Layer) stacked between an anode 10 (Anode) and a cathode 20 (Cathode). In a series-type OLED device, it can also be connected to another light-emitting unit through a charge generation layer 400 (CGL, charge generation layer), wherein the charge generation layer 400 includes an N-type connection layer 410 (N-CGL, N-charge generation layer) and a P-type connection layer 420 (P-CGL, P-charge generation layer) connected to each other. Among them, the hole blocking layer 70 and the electron transport layer 80 play the function of blocking holes and transporting electrons, and the electron transport layer 80 is connected to the N-type connection layer 410. The working principle of the OLED device structure is that electrons are generated from the cathode 20, holes are generated from the anode 10, and the generated electrons and holes are combined in the light-emitting layer 60 to emit light.

[0087] As shown in FIG. 2 , the present application proposes an organic light emitting diode device, comprising: a first electrode 100, wherein the first electrode 100 is used to generate electrons; a second electrode 200, wherein the second electrode 200 is used to generate charges; an N-type connection layer 410, wherein the N-type connection layer 410 is disposed between the first electrode 100 and the second electrode 200; a first electron transport layer 340, wherein the N-type connection layer 410 is disposed in contact with the first electron transport layer 340, and the N-type connection layer 410 is disposed on a side of the first electron transport layer 340 away from the first electrode 100, and electrons flow from the N-type connection layer 410 to the first electron transport layer 340; wherein the N-type connection layer 410 is doped with a first material and a second material, and the first electron transport layer 340 is made of a first material, wherein the first material is an N-type semiconductor material, and the second material is an active metal material, and the N-type connection layer 410 and the first electron transport layer 340 are integrally formed to block electrons from passing through in a direction from the first electrode 100 to the second electrode 200. Preferably, the active metal material is metal Li and / or metal Yb. Of course, in other embodiments, the active metal material may also be metal Na, metal K, etc.

[0088] The inventors have discovered through numerous experiments that by doping a certain amount of active metal material into the N-type connection layer 410 and replacing the material of the first electron transport layer 340 with an N-type semiconductor material, on the one hand, the electron releasing function of the N-type connection layer 410 can be retained, and on the other hand, the original hole blocking layer 70 and the electron transport layer 80 can also exert their functions of blocking holes and transporting electrons.

[0089] The organic light emitting diode device proposed in the present application only uses two thin film layers, namely, the N-type connection layer 410 and the first electron transport layer 340, to replace the original three thin film layers, namely, the hole blocking layer 70, the electron transport layer 80 and the N-type connection layer 410. Therefore, the number of original thin film layers is reduced, the number of metal masks (FMM, Fine Metal Mask) and thermal evaporation chambers is reduced, the production efficiency is improved, and the cost is reduced.

[0090] Of course, in other embodiments, the structure of the N-type connection layer 410 and the first electron transport layer 340 proposed in this embodiment can be used in a light-emitting diode device with only a single light-emitting unit, replacing the hole blocking layer 70 and the electron transport layer 80 to perform the functions of blocking holes and transporting electrons.

[0091] The inventors found that when the mass ratio of the first material to the second material in the N-type connection layer 410 is too small, the combination of the N-type connection layer 410 and the first electron transport layer 340 can only partially achieve the same effect as the original hole blocking layer 70 and the original electron transport layer 80, so that the light-emitting layer 60 cannot emit light normally. Similarly, when the mass ratio of the first material to the second material in the N-type connection layer 410 is too large, it can only partially achieve the same effect as the original hole blocking layer and the original electron transport layer, so that the light-emitting layer 60 cannot emit light normally. The inventors found through a large number of experiments that when the mass ratio of the first material to the second material in the N-type connection layer 410 is set to be less than or equal to 99:1 and greater than or equal to 97:3, the combination of the N-type connection layer 410 and the first electron transport layer 340 can basically have the same effect as the original hole blocking layer and the original electron transport layer.

[0092] In one embodiment, the organic light emitting diode device further includes a charge generation layer 400, the charge generation layer 400 includes the N-type connection layer 410 and the P-type connection layer 420 that are in contact with each other, the N-type connection layer 410 is closer to the first electrode layer than the P-type connection layer 420; the organic light emitting diode device further includes a light emitting unit, the number of the light emitting units is multiple, and the charge generation layer 400 is arranged between the adjacent light emitting units. Among them, the P-type connection layer 420 is a doped type of host and guest materials, the guest doping mass ratio is 6% to 10%, and the film thickness is 10nm; the thickness of the N-type connection layer 410 is 10nm or 15nm. Multiple light emitting units can be connected through the charge generation layer 400, and the present application does not limit the number of light emitting units.

[0093] In one embodiment, reference Figure 2 As shown, the light-emitting unit includes a first light-emitting unit 300. The first light-emitting unit 300 includes a first hole injection layer 310, a first hole transport layer 320, and a first light-emitting layer 330 arranged along a first direction H, one end of the first hole transport layer 320 is connected to the first hole injection layer 310, the other end of the first hole transport layer 320 is connected to the first light-emitting layer 330, and one end of the first light-emitting layer 330 away from the first hole transport layer 320 is connected to the first electron transport layer 340, and the first direction H is from the first electrode 100 to the second electrode 200.

[0094] The first hole injection layer 310 is generally a doped type of host and guest materials, the mass ratio of guest doping concentration is 0.5%-5.0%, and the thickness of the first hole injection layer 310 is 5nm-20nm; the first hole transport layer 320 is generally a single material, the same as the host material of the first hole injection layer 310, and the thickness is 18-27nm; the first light-emitting layer 330 is generally a doped type of host and guest materials, the doped guest can be a fluorescent material or a phosphorescent material, and the doping mass ratio is generally 2%-10%. The first light-emitting layer 330 includes a first organic light-emitting layer 610, a second organic light-emitting layer 710, and a third organic light-emitting layer 810, wherein the thickness of the first organic light-emitting layer 610 is 38-42nm, the thickness of the third organic light-emitting layer 810 is 18-22nm, and the thickness of the second organic light-emitting layer 710 is 28-32nm. The thickness of the first hole injection layer 310 is generally 14-16nm.

[0095] Based on the above configuration, the number of hole transport layers in this embodiment is only one layer, compared with the structure with two hole transport layers (refer to Figure 1 ), reducing the number of original thin film layers and the number of metal masks and thermal evaporation chambers.

[0096] In one embodiment, reference Figure 2 As shown, the light-emitting unit further includes a second light-emitting unit 500. The second light-emitting unit 500 includes a second hole transport layer 510, a second light-emitting layer 520 and a second electron transport layer 530 arranged along the first direction H, one end of the second light-emitting layer 520 is connected to the second hole transport layer 510, and the other end of the second light-emitting layer 520 is connected to the second electron transport layer 530.

[0097] The second hole transport layer 510 can be a single material or a double layer of different materials. If it is a single material, it is the same material as the first hole transport layer 320. The second hole transport layer 510 is set with different thicknesses according to different light-emitting layers. When the light-emitting layer is the first organic light-emitting layer 610, the thickness of the second hole transport layer 510 is 95-105nm, for example, it can be 98nm, 99nm, 103nm, 104nm; when the light-emitting layer is the third organic light-emitting layer 810, the thickness of the second hole transport layer 510 is 40-50nm, for example, it can be 43nm, 44nm, 48nm, 49nm; when the light-emitting layer is the second organic light-emitting layer 710, the thickness of the second hole transport layer 510 is 55-65nm, for example, it can be 58nm, 59nm, 63nm, 64nm. The second light-emitting layer 520 is the same as the first light-emitting layer 330. The second electron transport layer 530 is doped with two materials, one of which is Liq, and the proportion of Liq is 20%-40%.

[0098] Compared with the conventional second light-emitting unit 500, the second light-emitting unit 500 in this embodiment lacks the hole transport layer (2) 50 and the hole blocking layer 70, thereby reducing the number of thin film layers, and reducing the number of metal masks and thermal evaporation chambers.

[0099] The present application also provides a display panel, which includes the organic light emitting diode device of the above embodiment. Since the display panel includes the organic light emitting diode device of the above embodiment, the display panel also has the advantages and functions of the organic light emitting diode device of the above embodiment.

[0100] In one embodiment, reference Figure 2 As shown, the display panel includes a plurality of organic light emitting diode devices, each of which has a first electrode 100 for generating charges, and the heights of the first electrodes 100 of at least two adjacent organic light emitting diode devices are different.

[0101] refer to Figure 2 As shown, a pixel definition layer 900 is filled between adjacent organic light emitting diode devices, and the pixel definition layer 900 is disposed on the first electrode 100 of each organic light emitting diode device. The leakage path between adjacent organic light emitting diode devices is the distance from the pixel definition layer 900 on the first electrode 100 to the other first electrode 100. When the heights of the first electrodes 100 of two adjacent organic light emitting diode devices are different, the leakage path X from the first electrode 100 of one organic light emitting diode device to the first electrode 100 of the other organic light emitting diode device is inclined. When the distance between the two organic light emitting diode devices remains unchanged, the inclined leakage path X is longer than the horizontal leakage path Y. Based on the above description, the present embodiment can increase the distance of the leakage path X to reduce the occurrence of lateral leakage.

[0102] In one embodiment, reference Figure 3 and Figure 4As shown, the display panel includes at least one pixel unit, the pixel unit includes a plurality of organic light emitting diode devices, the plurality of organic light emitting diode devices include at least a first light emitting device 600, a second light emitting device 700 and a third light emitting device 800, the first light emitting device 600 can emit light in a first wavelength range, the second light emitting device 700 can emit light in a second wavelength range, and the third light emitting device 800 can emit light in a third wavelength range; the minimum value of the first wavelength range is greater than the maximum value of the second wavelength range, and the minimum value of the second wavelength range is greater than the maximum value of the third wavelength range; the first light emitting device 600, the second light emitting device 700 and the third light emitting device 800 all include a first electrode 100, and the heights of the first electrodes 100 of the first light emitting device 600, the second light emitting device 700 and the third light emitting device 800 are different.

[0103] The light in the first wavelength range may be 622-760 nm, the light in the second wavelength range may be 492-577 nm, and the light in the third wavelength range may be 435-450 nm.

[0104] Based on the above description, on the one hand, if the heights of the first electrodes 100 of the first light emitting device 600, the second light emitting device 700 and the third light emitting device 800 are different, then in a pixel unit, no matter how the arrangement of the first light emitting device 600, the second light emitting device 700 and the third light emitting device 800 changes, the heights of the first electrodes corresponding to the two adjacent light emitting devices are different, thereby ensuring that the leakage path X between the adjacent light emitting devices is tilted, so in actual production, there is no need to consider the arrangement relationship between the first light emitting device 600, the second light emitting device 700 and the third light emitting device 800. On the other hand, the arrangement of the first light emitting device 600, the second light emitting device 700 and the third light emitting device 800 in multiple pixel units of a conventional display panel is fixed. Through the above setting, the heights of the first electrodes corresponding to the adjacent light emitting diode devices in two adjacent pixels are different, so that the leakage path X between the adjacent pixel units is tilted.

[0105] In one embodiment, reference Figure 3 and Figure 4As shown, the first electrode 100 includes a metal layer 120, the first light-emitting device 600 includes a first organic light-emitting layer 610, the second light-emitting device 700 includes a second organic light-emitting layer 710, the third light-emitting device 800 includes a third organic light-emitting layer 810, the distance between the first organic light-emitting layer 610 and the metal layer 120 is a first distance H1, the distance between the second organic light-emitting layer 710 and the metal layer 120 is a second distance H2, and the distance between the third organic light-emitting layer 810 and the metal layer 120 is a third distance H3; wherein the first distance H1 is greater than the second distance H2, and the second distance H2 is greater than the third distance H3.

[0106] Organic light-emitting diode devices have a relatively obvious resonant cavity effect. The resonant cavity effect refers to the optical interference inside the device components. The resonant cavity effect mainly refers to the redistribution of photon density in different energy states, so that light of a specific wavelength can be emitted at a specific angle after conforming to the micro-resonant cavity mode to obtain the maximum intensity. Through a large number of experiments, it was found that the wavelength of light emitted by the organic light-emitting diode device is positively correlated with the distance H between the light-emitting layer and the anode metal layer.

[0107] The first distance H1 is a distance at which the light of the first wavelength range emitted by the first light-emitting device 600 can undergo a resonant cavity effect, thereby enhancing the intensity of the light of the first wavelength range. The second distance H2 is a distance at which the light of the second wavelength range emitted by the second light-emitting device 700 can undergo a resonant cavity effect, thereby enhancing the intensity of the light of the second wavelength range. The third distance H3 is a distance at which the light of the third wavelength range emitted by the third light-emitting device 800 can undergo a resonant cavity effect, thereby enhancing the intensity of the light of the third wavelength range. For example, in this embodiment, the first light-emitting device 600 can be a red light-emitting device, and the light of the first wavelength range is red light, which can increase the intensity of the red light; when the second light-emitting device 700 can be a green light-emitting device, the light of the second wavelength range is green light, which can increase the intensity of the green light; when the third light-emitting device 800 can be a blue light-emitting device, the light of the third wavelength range is blue light, which can increase the intensity of the blue light.

[0108] In one embodiment, if Figure 3 and Figure 4As shown, the first electrode 100 includes a first transparent conductive layer 110, a metal layer 120 and a second transparent conductive layer 130 stacked in sequence, the second transparent conductive layer 130 is arranged at one end of the metal layer 120 close to the first electron transport layer 340, and the heights of the first transparent conductive layer 110 of the first light-emitting device 600, the second light-emitting device 700 and the third light-emitting device 800 are the same; the height of the second transparent conductive layer 130 of the first light-emitting device 600 is greater than the height of the second transparent conductive layer 130 of the second light-emitting device 700, and the height of the second transparent conductive layer 130 of the second light-emitting device 700 is greater than the height of the second transparent conductive layer 130 of the third light-emitting device 800.

[0109] The first transparent conductive layer 110 and the second transparent conductive layer 130 are generally made of ITO material, and the thickness of the first transparent conductive layer 110 is 3-12 nm. The metal layer 120 is generally made of metal Ag.

[0110] Since the heights of the first transparent conductive layers 110 of the first light emitting device 600, the second light emitting device 700 and the third light emitting device 800 are the same, the heights of the first electrodes 100 of the first light emitting device 600, the second light emitting device 700 and the third light emitting device 800 are determined by the first transparent conductive layer 110. Therefore, the height of the second transparent conductive layer 130 of the first light emitting device 600 is greater than the height of the second transparent conductive layer 130 of the second light emitting device 700, and the height of the second transparent conductive layer 130 of the second light emitting device 700 is greater than the height of the second transparent conductive layer 130 of the third light emitting device 800. This can make the height of the first electrode 100 of the first light emitting device 600 greater than the height of the first electrode 100 of the second light emitting device 700, and the height of the first electrode 100 of the second light emitting device 700 is greater than the height of the first electrode 100 of the third light emitting device 800. This can further lengthen the leakage path X and reduce the occurrence of lateral leakage.

[0111] The first transparent conductive layer 110 is located between the light emitting layer and the metal layer 120, so the distance between the light emitting layer and the metal layer 120 can be adjusted only by setting the height of the second transparent conductive layer 130, so that the distance between the light emitting layer and the metal layer 120 satisfies the resonant cavity effect. Since the distance at which the first light emitting device 600 has a resonant cavity effect is greater than the distance at which the second light emitting device 700 has a resonant cavity effect, and the distance at which the second light emitting device 700 has a resonant cavity effect is greater than the distance at which the third light emitting device 800 has a resonant cavity effect, the height of the second transparent conductive layer 130 of the first light emitting device 600 is set to be greater than the height of the second transparent conductive layer 130 of the second light emitting device 700, and the height of the second transparent conductive layer 130 of the second light emitting device 700 is set to be greater than the height of the second transparent conductive layer 130 of the third light emitting device 800, so that the distance between the light emitting layer and the metal layer 120 satisfies the resonant cavity effect.

[0112] In one embodiment, the height of the second transparent conductive layer 130 of the first light-emitting device 600 is greater than or equal to 5nm and less than or equal to 15nm; the height of the second transparent conductive layer 130 of the second light-emitting device 700 is greater than or equal to 40nm and less than or equal to 60nm; the height of the second transparent conductive layer 130 of the third light-emitting device 800 is greater than or equal to 70nm and less than or equal to 110nm. In other embodiments, the height of the second transparent conductive layer 130 of the first light-emitting device 600 is greater than or equal to 5nm and less than or equal to 15nm; or, the height of the second transparent conductive layer 130 of the second light-emitting device 700 is greater than or equal to 40nm and less than or equal to 60nm; or, the height of the second transparent conductive layer 130 of the third light-emitting device 800 is greater than or equal to 70nm and less than or equal to 110nm.

[0113] When the height of the second transparent conductive layer 130 is greater than or equal to 5nm and less than or equal to 15nm, the first distance H1 satisfies the distance at which the resonance cavity effect of the first period occurs, thereby enhancing the intensity of the light in the first wavelength range. When the height of the second transparent conductive layer 130 is greater than or equal to 40nm and less than or equal to 60nm, the second distance H2 satisfies the distance at which the resonance cavity effect of the first period occurs, thereby enhancing the intensity of the light in the second wavelength range. When the height of the second transparent conductive layer 130 is greater than or equal to 70nm and less than or equal to 110nm, the third distance H3 satisfies the distance at which the resonance cavity effect of the first period occurs, thereby enhancing the intensity of the light in the third wavelength range. For example, in this embodiment, the first light-emitting device 600 can be a red light-emitting device, and the light in the first wavelength range is red light, which can increase the intensity of red light; the second light-emitting device 700 can be a green light-emitting device, and the light in the second wavelength range is green light, which can increase the intensity of green light; the third light-emitting device 800 can be a blue light-emitting device, and the light in the third wavelength range is blue light, which can increase the intensity of blue light.

[0114] In other embodiments, the height of the second transparent conductive layer 130 of the first light-emitting device 600 is greater than or equal to 200nm and less than or equal to 260nm; the height of the second transparent conductive layer 130 of the second light-emitting device 700 is greater than or equal to 300nm and less than or equal to 370nm; the height of the second transparent conductive layer 130 of the third light-emitting device 800 is greater than or equal to 400nm and less than or equal to 480nm. In other embodiments, the height of the second transparent conductive layer 130 of the first light-emitting device 600 is greater than or equal to 200nm and less than or equal to 260nm; or, the height of the second transparent conductive layer 130 of the second light-emitting device 700 is greater than or equal to 300nm and less than or equal to 370nm; or, the height of the second transparent conductive layer 130 of the third light-emitting device 800 is greater than or equal to 400nm and less than or equal to 480nm.

[0115] When the height of the second transparent conductive layer 130 is greater than or equal to 200nm and less than or equal to 260nm, the first distance H1 satisfies the distance at which the resonant cavity effect of the second period occurs, thereby enhancing the intensity of the light in the first wavelength range. When the height of the second transparent conductive layer 130 is greater than or equal to 300nm and less than or equal to 370nm, the second distance H2 satisfies the distance at which the resonant cavity effect of the second period occurs, thereby enhancing the intensity of the light in the second wavelength range. When the height of the second transparent conductive layer 130 is greater than or equal to 400nm and less than or equal to 480nm, the third distance H3 satisfies the distance at which the resonant cavity effect of the second period occurs, thereby enhancing the intensity of the light in the third wavelength range. For example, in this embodiment, the first light-emitting device 600 can be a red light-emitting device, and the light in the first wavelength range is red light, which can increase the intensity of red light; the second light-emitting device 700 can be a green light-emitting device, and the light in the second wavelength range is green light, which can increase the intensity of green light; the third light-emitting device 800 can be a blue light-emitting device, and the light in the third wavelength range is blue light, which can increase the intensity of blue light.

[0116] The present application also provides a display device, including the display panel shown in the above embodiment. Therefore, the display device also has the advantages and functions of the display panel.

[0117] In the specific implementation process, the display device provided in the embodiment of the present application may be an OLED display device, and the corresponding product may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, etc. Other essential components of the display device should be understood by ordinary technicians in the field, and will not be described in detail here, nor should they be used as limitations to the present application.

[0118] In the present application, the structural embodiments and method embodiments may complement each other if they do not conflict.

[0119] The above description is intended to be illustrative rather than restrictive. For example, the above examples (or one or more of them) can be used in combination with each other. For example, those of ordinary skill in the art can use other embodiments when reading the above description. In addition, in the above-mentioned specific embodiments, various features can be grouped together to simplify the application. This should not be interpreted as a feature of an application that does not require protection being necessary for any claim. On the contrary, the subject matter of the present application may be less than all the features of the embodiments of a specific application. Thus, the following claims are incorporated into the specific embodiments as examples or embodiments, wherein each claim is independently used as a separate embodiment, and it is considered that these embodiments can be combined with each other in various combinations or arrangements. The scope of the present application should be determined with reference to the full scope of the equivalent forms of the attached claims and these claims.

[0120] The present application describes exemplary embodiments with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions is exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown in the present application, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0121] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components are in direct physical or electrical contact with each other. For another example, when describing some embodiments, the term "coupled" may be used to indicate that two or more components are in direct physical or electrical contact. However, the term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0122] In the present application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The terms "plurality" and "several" refer to two or more than two, unless otherwise clearly defined.

[0123] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the disclosure of the application herein. The present application is intended to cover any modification, use or adaptation of the present application, which follows the generality of the present application and includes common knowledge or customary techniques in the art that are not applied for by the present application. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0124] It should be understood that the present application is not limited to the precise structures that have been described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. An organic light emitting diode device, characterized in that: include: a first electrode, the first electrode being used to generate electrons; a second electrode, the second electrode being used to generate electric charge; An N-type connection layer, the N-type connection layer is disposed between the first electrode and the second electrode; A first electron transport layer, wherein the N-type connection layer is arranged in contact with the first electron transport layer, and the N-type connection layer is arranged on a side of the first electron transport layer away from the first electrode, and electrons flow from the N-type connection layer to the first electron transport layer; Among them, the N-type connection layer is doped with a first material and a second material, the first electron transport layer is made of a first material, the first material is an N-type semiconductor material, and the second material is an active metal material. The N-type connection layer and the first electron transport layer are used as a whole to block electrons from passing through in a direction from the first electrode to the second electrode.

2. The organic light emitting diode device according to claim 1, characterized in that: The organic light emitting diode device further comprises a charge generation layer, wherein the charge generation layer comprises the N-type connection layer and the P-type connection layer contacting each other, and the N-type connection layer is closer to the first electrode layer than the P-type connection layer; The organic light emitting diode device further comprises a light emitting unit, the number of the light emitting units is multiple, and a charge generation layer is arranged between adjacent light emitting units.

3. The organic light emitting diode device according to claim 2, characterized in that: The light emitting unit comprises a first light emitting unit; The first light-emitting unit includes a first hole injection layer, a first hole transport layer, and a first light-emitting layer arranged along a first direction, one end of the first hole transport layer is connected to the first hole injection layer, the other end of the first hole transport layer is connected to the first light-emitting layer, and one end of the first light-emitting layer facing away from the first hole transport layer is connected to the first electron transport layer; The first direction is from the first electrode to the second electrode.

4. The organic light emitting diode device according to claim 3, characterized in that: The light emitting unit further comprises a second light emitting unit, and the first light emitting unit and the second light emitting unit are connected to each other through the charge generation layer; The second light-emitting unit includes a second hole transport layer, a second light-emitting layer and a second electron transport layer arranged along the first direction, one end of the second light-emitting layer is connected to the second hole transport layer, and the other end of the second light-emitting layer is connected to the second electron transport layer; The first direction is from the first electrode to the second electrode.

5. The organic light emitting diode device according to claim 1, characterized in that: The mass ratio of the first material to the second material in the N-type connection layer is less than or equal to 99:1 and greater than or equal to 97:

3.

6. The organic light emitting diode device according to claim 1, characterized in that: The active metal material is metal Li and / or metal Yb.

7. A display panel, characterized in that: The display panel comprises the organic light emitting diode device according to any one of claims 1 to 6.

8. The display panel according to claim 7, wherein: The display panel includes a plurality of organic light emitting diode devices, each of which has a first electrode for generating charges, and the first electrodes of at least two adjacent organic light emitting diode devices have different heights.

9. The display panel according to claim 8, wherein: The display panel includes at least one pixel unit, the pixel unit includes a plurality of organic light emitting diode devices, the plurality of organic light emitting diode devices include at least a first light emitting device, a second light emitting device and a third light emitting device, the first light emitting device can emit light in a first wavelength range, the second light emitting device can emit light in a second wavelength range, and the third light emitting device can emit light in a third wavelength range; a minimum value of the first wavelength range is greater than a maximum value of the second wavelength range, and a minimum value of the second wavelength range is greater than a maximum value of the third wavelength range; The first light emitting device, the second light emitting device and the third light emitting device all include a first electrode, and the heights of the first electrodes of the first light emitting device, the second light emitting device and the third light emitting device are different.

10. The display panel according to claim 9, wherein: The first electrode includes a metal layer, the first light-emitting device includes a first organic light-emitting layer, the second light-emitting device includes a second organic light-emitting layer, the third light-emitting device includes a third organic light-emitting layer, the first organic light-emitting layer is at a first distance from the metal layer, the second organic light-emitting layer is at a second distance from the metal layer, and the third organic light-emitting layer is at a third distance from the metal layer; The first distance is greater than the second distance, and the second distance is greater than the third distance.

11. The display panel according to claim 10, wherein: The first electrode comprises a first transparent conductive layer, a metal layer and a second transparent conductive layer stacked in sequence, the second transparent conductive layer is arranged at one end of the metal layer close to the first electron transport layer, and the first transparent conductive layers of the first light-emitting device, the second light-emitting device and the third light-emitting device have the same height; The height of the second transparent conductive layer of the first light emitting device is greater than that of the second transparent conductive layer of the second light emitting device, and the height of the second transparent conductive layer of the second light emitting device is greater than that of the second transparent conductive layer of the third light emitting device.

12. The display panel according to claim 11, wherein: The height of the second transparent conductive layer of the first light-emitting device is greater than or equal to 5 nm and less than or equal to 15 nm; and / or, The height of the second transparent conductive layer of the second light emitting device is greater than or equal to 40 nm and less than or equal to 60 nm; and / or, The height of the second transparent conductive layer of the third light emitting device is greater than or equal to 70 nm and less than or equal to 110 nm.

13. The display panel according to claim 11, wherein: The height of the second transparent conductive layer of the first light-emitting device is greater than or equal to 200 nm and less than or equal to 260 nm; and / or, The height of the second transparent conductive layer of the second light emitting device is greater than or equal to 300 nm and less than or equal to 370 nm; and / or, The height of the second transparent conductive layer of the third light emitting device is greater than or equal to 400 nm and less than or equal to 480 nm.

14. A display device, characterized in that: A display panel comprising any one of claims 7 to 13.

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