Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device and a preparation method thereof and a display device, the photoelectric device comprises a bottom electrode, an electronic function layer and a top electrode, the photoelectric device further comprises a first function layer, and the first function layer is arranged between the top electrode and the electronic function layer; wherein the material of the electronic functional layer comprises a first compound, and the material of the first functional layer comprises an ultraviolet absorption material. According to the photoelectric device provided by the invention, the first functional layer is arranged on the upper side of the electronic functional layer by adopting the ultraviolet absorption material, the first functional layer and the electronic functional layer have relatively good energy level matching performance, and when the device is subjected to ultraviolet radiation treatment, ultraviolet light can be absorbed, the electronic functional layer is prevented from being damaged by the ultraviolet light, and the photoelectric device is improved. And the service life and the luminous efficiency of the device can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an optoelectronic device, a method for manufacturing the same, and a display device. Background Art

[0002] Optoelectronic devices refer to devices made based on the photoelectric effect, and specifically may be organic light-emitting diodes (OLEDs), quantum dot light-emitting diodes (QLEDs), solar cells, detectors, etc. The structure of existing optoelectronic devices generally includes a cathode, an electron transport layer, and an anode.

[0003] Currently, commonly used electron transport layer materials include titanate, zirconium dioxide, molybdenum disulfide, etc. Although these materials have better charge transport capabilities, they are also intolerant to ultraviolet light. When preparing optoelectronic devices, ultraviolet curing processes are often used in film curing processes and device packaging processes. This causes the electron transport layer materials to be easily damaged during ultraviolet irradiation, which in turn affects the performance of the device. Summary of the invention

[0004] In view of this, the present application provides an optoelectronic device, a method for manufacturing the same, and a display device.

[0005] The embodiment of the present application is implemented as follows:

[0006] In a first aspect, the present application provides an optoelectronic device, comprising a bottom electrode, an electronic functional layer and a top electrode, wherein the optoelectronic device further comprises a first functional layer, wherein the first functional layer is disposed between the top electrode and the electronic functional layer;

[0007] The material of the electronic functional layer includes a first compound, and the material of the first functional layer includes an ultraviolet absorption material.

[0008] In a second aspect, the present application provides a method for preparing an optoelectronic device, comprising the following steps:

[0009] providing a bottom electrode;

[0010] A functional film layer is arranged on one side of the bottom electrode, wherein the functional film layer comprises an electronic functional layer and a first functional layer;

[0011] Disposing a top electrode on a side of the functional film layer away from the bottom electrode to obtain a photoelectric device;

[0012] The preparation of the first functional layer includes: providing an ultraviolet absorbing material, and depositing the ultraviolet absorbing material to obtain the first functional layer.

[0013] In a third aspect, the present application proposes a display device, comprising the optoelectronic device as described above, or comprising an optoelectronic device manufactured by the preparation method described above.

[0014] The optoelectronic device proposed in the present application uses ultraviolet absorbing materials to set a first functional layer on the upper side of the electronic functional layer. The first functional layer has a better energy level matching with the electronic functional layer, and when the device is subjected to ultraviolet irradiation treatment, it can absorb ultraviolet light to avoid ultraviolet light damaging the electronic functional layer, which helps to improve the service life and luminous efficiency of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0016] Figure 1 is a schematic structural diagram of an optoelectronic device proposed in one embodiment of the present application;

[0017] Figure 2 is a schematic structural diagram of a photoelectric device proposed in another embodiment of the present application;

[0018] Figure 3 is a schematic structural diagram of a photoelectric device proposed in another embodiment of the present application;

[0019] Reference numerals:

[0020] 100 - optoelectronic device; 10 - anode; 20 - light-emitting layer; 30 - electronic functional layer; 40 - cathode; 50 - hole transport layer; 60 - hole injection layer; 70 - first functional layer; 80 - second functional layer. DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0022] In this application, unless otherwise specified, the directional words used, such as "upper" and "lower", refer specifically to the directions of the drawings in the accompanying drawings. In addition, in the description of the specification of this application, the term "including" means "including but not limited to".

[0023] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0024] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0025] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0026] Explanation of terms

[0027] In the present application, aromatic group, aromatic series and aromatic ring system have the same meaning and can be interchanged.

[0028] In the present application, heteroaromatic group, heteroaromatic series and heteroaromatic ring system have the same meaning and can be interchanged.

[0029] In the present application, "substituted or unsubstituted" means that the defined group may be substituted or unsubstituted. When the defined group is substituted and no additional definition is provided, "substituted" means that the hydrogen of the compound or group is replaced by a substituent such as a deuterium atom, a halogen, a hydroxyl group, a nitro group, a cyano group, an isocyano group, an amino group, an azido group, an amidino group, a hydrazine group, a hydrazone group, a carbonyl group, a carbamoyl group, a thiol group, an ester group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphate group or a salt thereof, a silyl group, a C1-C20 alkyl group, a C2-C20 alkenyl group, a C2-C20 alkynyl group, a C6-C30 aryl group, a C7-C30 aralkyl group, a C1-C30 alkoxy group, a C1-C20 heteroalkyl group, a C3-C20 heterocyclic group, a C3-C20 heteroaralkyl group, a C3-C30 cycloalkyl group, a C3-C15 cycloalkenyl group, a C6-C15 cycloalkynyl group, a C3-C30 heterocycloalkyl group, or a combination thereof.

[0030] In the present application, "ring atoms" means the number of atoms of the ring atoms constituting the ring itself in a structural compound (e.g., a monocyclic compound, a condensed ring compound, a cross-linked compound, a carbocyclic compound, a heterocyclic compound) formed by atoms bonding to form a ring, i.e., the number of atoms forming the ring. When the ring is substituted by a substituent, the atoms contained in the substituent are not included in the ring atoms. The same is true for the "ring atoms" described below, unless otherwise specified. For example, the number of ring atoms of a benzene ring is 6, the number of ring atoms of a naphthalene ring is 10, and the number of ring atoms of a thienyl group is 5.

[0031] In the present application, "aryl or aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing a hydrogen atom, which can be a monocyclic aromatic group, a condensed aromatic group, or a polycyclic aromatic group. For polycyclic rings, at least one is an aromatic ring system. For example, "substituted or unsubstituted aromatic groups having 6 to 40 ring atoms" refers to aromatic groups containing 6 to 40 ring atoms, and the aromatic group can be optionally further substituted. Preferably, substituted or unsubstituted aromatic groups having 6 to 30 ring atoms are preferred, more preferably substituted or unsubstituted aromatic groups having 6 to 18 ring atoms are preferred, and particularly preferably substituted or unsubstituted aromatic groups having 6 to 14 ring atoms are preferred, and the aromatic group can be optionally further substituted; suitable examples include, but are not limited to: phenyl, biphenyl, terphenyl, naphthyl, anthracenyl, phenanthrenyl, fluoranthenyl, triphenylene, pyrenyl, perylene, naphthyl, fluorenyl, dinaphthylenyl, acenaphthene and derivatives thereof. It is understandable that multiple aromatic groups may also be interrupted by short non-aromatic units (e.g. <10% non-H atoms, such as C, N or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, diaryl ether systems should also be included in the definition of aromatic groups.

[0032] In the present application, "heteroaryl or heteroaromatic group" means that at least one carbon atom is replaced by a non-carbon atom on the basis of an aromatic group, and the non-carbon atom can be an N atom, an O atom, an S atom, an Si atom, a P atom, etc. For example, "substituted or unsubstituted heteroaryl having 5 to 40 ring atoms" means a heteroaryl having 5 to 40 ring atoms, preferably a substituted or unsubstituted heteroaryl having 6 to 30 ring atoms, more preferably a substituted or unsubstituted heteroaryl having 6 to 18 ring atoms, and particularly preferably a substituted or unsubstituted heteroaryl having 6 to 14 ring atoms, and the heteroaryl is optionally further substituted; suitable examples include, but are not limited to: thienyl, furanyl, pyrrolyl, oxadiazolyl, triazolyl, imidazolyl, pyridyl, bipyridyl, pyrimidyl, Triazine, acridinyl, pyridazinyl, pyrazinyl, quinolyl, isoquinolyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, benzothiophenyl, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothiphenyl, furopyrrolyl, furofuranyl, thienofuranyl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, o-naphthyl, phenanthridinyl, primary pyridyl, quinazolinone, dibenzothiophenyl, dibenzofuranyl, carbazolyl and derivatives thereof.

[0033] In the present application, "alkyl" may refer to a linear, branched and / or cyclic alkyl group. The carbon number of the alkyl group may be 1 to 50, 1 to 30, 1 to 20, 1 to 10 or 1 to 6. Phrases containing this term, such as "C 1-9"Alkyl" refers to an alkyl group containing 1 to 9 carbon atoms, and each occurrence may be independently C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, cyclopentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, cyclohexyl, 4-methylcyclohexyl, 4-tert-butylcyclohexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl 2-Hexyldecyl, 2-octyldecyl, 2-undecyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyldecyl, 2-octyldecyl, 2-undecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, 2-tridecyl, 2-tetradecyl, 2-pentadecyl, 2-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, 2-heptadecyl, 2-octylhexadecyl, 2-octadecyl, 2-octadecyl, 2-nonadecyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, 2-heneicosyl, 2-heneicosyl, 2-heconicosyl, 2-docosyl, 2-tricosyl, 2-tetracosyl, 2-pentacosyl, 2-hexacosyl, 2-heptacosyl, 2-octacosyl, 2-nonacosyl, 2-triacontyl, etc.

[0034] In this application, “-C n H 2n+1 "Unless otherwise specified or limited, it means a straight-chain alkyl group. For example, -C4H9 means n-butyl.

[0035] In the present application, "alkoxy" refers to a group having a structure of "-O-alkyl", i.e., an alkyl group as defined above is connected to other groups via an oxygen atom. Phrases containing the term, suitable examples include, but are not limited to, methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt) and tert-butoxy (-OC(CH3)3 or -OtBu).

[0036] In the present application, "phenylalkyl" refers to phenyl substituted with an alkyl group, and the alkyl group may refer to the description above. Suitable examples include, but are not limited to, tolyl, ethylphenyl, etc. 30 The C1~C 30 is the number of carbon atoms in the alkyl group.

[0037] In the present application, "phenylalkoxy" is a phenyl group substituted with an alkoxy group, and the alkoxy group can refer to the description above. Suitable examples include, but are not limited to: wait.

[0038] In the present application, "*" indicates a connection site or a fusion site. When the connection site is not specified in the group, it indicates that an optional connection site in the group is used as the connection site. When the fusion site is not specified in the group, it indicates that an optional fusion site in the group is used as the fusion site, and preferably two or more sites in the ortho position in the group are fusion sites.

[0039] In the present application, the single bond to which the substituent is connected runs through the corresponding ring, indicating that the substituent can be connected to any position of the ring. R4 can be connected to any substitutable position in the ring.

[0040] In the present application, when the same substituent appears multiple times, it can be independently selected from different groups. For example, the above general formula may contain m1 R4, and each R4 can be independently selected from different groups.

[0041] The terms "combination thereof", "any combination thereof", "any combination thereof" and the like used in this application include all suitable combinations of any two or more of the listed items.

[0042] In a first aspect, the present application embodiment provides an optoelectronic device 100, see Figure 1 , the optoelectronic device 100 includes a bottom electrode, an electronic functional layer 30 and a top electrode, wherein the material of the electronic functional layer 30 includes but is not limited to at least one of a first compound, a titanate, a metal oxide, a doped metal oxide, a II-VI semiconductor material, a III-V semiconductor material and an I-III-VI semiconductor material. These materials have better charge transfer properties, but are also easily damaged by ultraviolet light. In view of this, the optoelectronic device 100 proposed in the embodiment of the present application also includes a first functional layer 70, which is arranged between the top electrode and the electronic functional layer 30, and is arranged adjacent to the electronic functional layer 30, and the material of the first functional layer 70 includes an ultraviolet absorption material.

[0043] The optoelectronic device 100 proposed in the present application uses an ultraviolet absorbing material to set a first functional layer 70 on the upper side of the electronic functional layer 30. When the device is subjected to ultraviolet irradiation treatment, the first functional layer 70 can absorb ultraviolet light, thereby preventing ultraviolet light from directly irradiating the electronic functional layer 30 and further damaging the material of the electronic functional layer 30, which helps to give full play to the excellent properties of the first compound and greatly improve the service life and luminous efficiency of the device.

[0044] In some embodiments, the ultraviolet absorption material can be a common material with an absorption rate of ultraviolet light greater than or equal to 85%. The ultraviolet absorption rate refers to the ratio of the intensity of the incident light absorbed to the intensity of the incident light; a material with an ultraviolet absorption rate greater than or equal to 85% can effectively absorb ultraviolet light and prevent ultraviolet light from damaging the electronic functional layer 30.

[0045] In some embodiments, the ultraviolet absorbing material has obvious absorption in the ultraviolet A band and / or the ultraviolet B band, wherein the ultraviolet A band is 320-400 nm, and the ultraviolet B band is 280-320 nm.

[0046] In some embodiments, the ultraviolet absorbing material includes one or more of titanium dioxide (TiO2), cerium oxide (CeO2), calcium carbonate (CaCO3), silicon dioxide (SiO2), zirconium dioxide (ZrO2), aluminum oxide (Al2O3), zinc silicate (Zn2SiO4), cadmium sulfide (CdS), gallium arsenide (GaAs), phenolphthalein violet, polycarbonate, and polyethylene glycol terephthalate. In other embodiments, the ultraviolet absorbing material is further selected from titanium dioxide (TiO2), cerium oxide (CeO2), calcium carbonate (CaCO3), silicon dioxide (SiO2), zirconium dioxide (ZrO2), aluminum oxide (Al2O3), zinc silicate (Zn2SiO4), cadmium sulfide (CdS), and gallium arsenide (GaAs). These materials also have high electron mobility, which helps to improve the photoelectric performance of the device.

[0047] In some embodiments, the thickness of the first functional layer 70 is 10-20 nm, for example, 10 nm, 11 nm, 12 nm, 13 nm, 14 nm, 15 nm, 16 nm, 17 nm, 18 nm, 19 nm, 20 nm, and values ​​between any two of the above values.

[0048] Specifically, the metal oxide is selected from at least one of ZnO, BaO, TiO2, and SnO2; the metal oxide in the doped metal oxide is selected from at least one of ZnO, TiO2, and SnO2, the doping element is selected from at least one of Al, Mg, Li, In, and Ga, the II-VI semiconductor material is selected from at least one of ZnS, ZnSe, and CdS; the III-V semiconductor material is selected from at least one of InP and GaP; the I-III-VI semiconductor material is selected from at least one of CuInS and CuGaS.

[0049] The first compound has a structure shown in formula (I):

[0050]

[0051] wherein R1, R2, and R3 are each independently selected from H, D, a halogen atom, a substituted or unsubstituted C1-C 30 Alkyl, substituted or unsubstituted C1~C 30 Alkoxy, substituted or unsubstituted C7~C 36 Phenylalkyl, substituted or unsubstituted C7~C 36 One or more of phenylalkoxy;

[0052] Ar1 and Ar2 are each independently selected from the following structures:

[0053]

[0054] Wherein, D1, D3, D4, and D5 are selected from substituted or unsubstituted aryl groups having 6 to 60 ring atoms, substituted or unsubstituted heteroaryl groups having 5 to 60 ring atoms, or a combination thereof;

[0055] D2 is selected from H, D, a substituted or unsubstituted aryl group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms, or a combination thereof;

[0056] n1 and n2 are each independently selected from integers of 0-4.

[0057] In some embodiments, the organic compound comprises one or more of the following structural formulas:

[0058]

[0059]

[0060]

[0061] In some embodiments, the material of the electronic functional layer 30 includes one or more of the first compounds, the first compound is a bissulfone benzopyrrole organic compound, which has a good electron injection ability due to its multiple electron-rich nitrogen atoms and sulfur atoms, and the introduction of the sulfone group can effectively passivate the lone pair of electrons of the sulfur atom, reduce the influence of free electrons on light and heat, and improve the stability of the material; on the other hand, it can reduce the LUMO energy level of the material, reduce the band gap difference between the electrode and the electron transport layer, and make the electrons more effectively injected. At the same time, the band gap difference between the quantum dot and the electron transport layer increases, increasing the injection difficulty, thereby reducing the efficiency and stability of the quantum dot due to excessive electron injection. Imbalance in carriers causes a decrease; in addition, its large conjugated linear structure is itself conducive to electron transmission. The optoelectronic device 100 proposed in this application uses the first compound to prepare the electronic functional layer 30, which is conducive to improving electron injection and balancing the injection balance of holes and electrons, thereby improving the luminous efficiency of the optoelectronic device 100, and the stable molecular structure can increase the life of the optoelectronic device 100. However, compounds with high molecular planarity usually also have the characteristic of easily absorbing ultraviolet energy, which results in that when the first compound is used to prepare the electronic functional layer 30, the material is easily damaged by ultraviolet light, resulting in its high charge transfer capacity being difficult to fully exert. The optoelectronic device 100 proposed in the present application uses the first compound to prepare the electronic functional layer 30, and at the same time uses ultraviolet absorbing materials to set the first functional layer 70 on the upper side of the electronic functional layer 30. When the device is subjected to ultraviolet irradiation treatment, the first functional layer 70 can absorb ultraviolet light, thereby preventing ultraviolet light from directly irradiating the electronic functional layer 30 and further damaging the electronic functional layer 30 material, which helps to fully exert the excellent characteristics of the first compound and greatly improve the service life and luminous efficiency of the device.

[0062] In addition, the energy level matching between the ultraviolet absorbing material and the conventional film material used in the art is poor, which will limit its application in the preparation process of the optoelectronic device 100 to a certain extent. However, in the optoelectronic device 100 of this embodiment, the bissulfone benzopyrrole organic compound has the characteristic of adjustable energy level, and the electronic functional layer 30 is prepared by using the first compound. The first functional layer 70 is arranged adjacent to the electronic functional layer 30 and can be well matched with the electronic functional layer 30, thereby solving the problem of ultraviolet light damage without affecting the optoelectronic performance of the device.

[0063] In some specific embodiments, the first compound includes one or more of the following structural formulas: M1-1, M1-2, M2-1, and M2-10.

[0064] In some specific embodiments, the preparation method of the first compound is as follows:

[0065] The synthetic route of organic compound M1-1 is as follows:

[0066]

[0067] In the first embodiment, the organic compound M1-1 is prepared as follows:

[0068] Step 1: Compound 1 (4 mmol, 716 mg) was added to a 100 mL two-necked bottle, and 1-bromooctane (10 mmol, 1930 mg) and potassium hydroxide (2.26 mmol, 557 mg) were weighed and added. 40 ml of dimethyl sulfoxide was added, nitrogen was introduced and vacuumed for 15 minutes using a vacuum pump, stirred and heated to 85 ° C, and the reaction was continued for 24 hours. The reaction was stopped and cooled to room temperature, and the reaction solution was extracted, and 200 ml of water and 1500 ml of dichloromethane were used to extract repeatedly 3 to 4 times. The obtained organic extract was dried using anhydrous magnesium sulfate, and the filtrate was collected and mixed with 200 to 300 mesh silica gel and purified and separated using column chromatography. The eluent used petroleum ether, dichloromethane and ethyl acetate (volume ratio of 200:1:1), and finally compound 2 was obtained as a white solid of 140 mg with a yield of 90%; the melting point was 106 ° C.

[0069] Step 2: Add compound 2 (4mmol, 1055mg) to a 100mL two-necked bottle, dissolve in 40mL chloroform, dissolve N-bromosuccinimide (NBS) (8mmol, 1424mg) in 10mL chloroform, 40mL chloroform, stir for 3h in an ice bath, monitor the complete reaction of the raw materials by thin layer chromatography (TLC), and then stop the reaction. The reaction solution is distilled under reduced pressure to remove the solvent. The crude product is mixed with 200 to 300 mesh silica gel and separated by column chromatography. The mobile phase is petroleum ether: ethyl acetate (volume ratio is 20:1) to obtain the intermediate crude product; in a 100mL two-necked round-bottom flask, the intermediate product, 2-nitrophenylboronic acid (4mmol, 668mg), potassium phosphate aqueous solution (2M, 0.4mL), catalyst Pd(PPh3)4 (58mg, 0.05mmol), 30mL redistilled toluene and 5mL ethanol are added in sequence. Stir the reaction at 90℃ for 24h under nitrogen atmosphere. After the reaction was completed, the reaction was quenched with deionized water, and then extracted three times with dichloromethane and water respectively, and then dried with a desiccant, and rotary evaporated to obtain a crude product. The crude product was purified by column chromatography using a silica gel column, and the eluent was ethyl acetate, dichloromethane and petroleum ether (volume ratio of 1:1:20), and finally compound 3 was obtained as a solid product of 1.4 g, with a total yield of 70% in two steps; melting point 152-155°C.

[0070] Step 2: Compound 3 (1 mmol, 505 mg), PPh3 (10 mmol, 2.62 g) and 20 ml of ultra-dry o-dichlorobenzene (ODB) were added to a 100 mL single-mouth bottle, nitrogen was introduced and vacuum pumped for 30 minutes, stirred and heated to reflux, the reaction was continued for 24 h, the reaction was stopped, and o-dichlorobenzene was removed by vacuum distillation. The crude product was separated by column chromatography, and the eluent used was petroleum ether, dichloromethane and ethyl acetate (volume ratio of 12:1:1), and finally compound 4 was obtained as a solid product of 88 mg with a yield of 20%; melting point 173-176 ° C.

[0071] Step 3: Compound 4 (1 mmol, 441 mg) was added to a 100 ml two-necked bottle, and 1-bromohexane (2.26 mmol, 480 mg) and potassium hydroxide (2.26 mmol, 126 mg) were weighed and added, 40 ml of dimethyl sulfoxide was added, nitrogen was introduced and vacuumed for 15 minutes using a vacuum pump, stirred and heated to 85 ° C, and the reaction was continued for 24 hours. The reaction was stopped and cooled to room temperature, and the reaction solution was extracted, and 200 ml of water and 1500 ml of dichloromethane were used for repeated extraction 3 to 4 times. The obtained organic extract was dried using anhydrous magnesium sulfate, and the filtrate was collected and mixed with 200 to 300 mesh silica gel for purification and separation using column chromatography. The eluent used petroleum ether, dichloromethane and ethyl acetate (volume ratio of 200:1:1), and finally compound 5 was obtained as a light yellow solid of 140 mg with a yield of 20%; the melting point was 106 ° C.

[0072] Step 4: Add compound 5 (1mmol, 609mg) to a 50ml single-mouth bottle, and add 5ml of glacial acetic acid and 10ml of CHCl3 solvent; then add 2.5ml of 30% H2O2 aqueous solution in an ice bath; heat to 60°C and react for 24h; after the reaction, pour the reaction solution into a separatory funnel and extract with dichloromethane and water 3 to 4 times, collect the organic phase, dry it with anhydrous magnesium sulfate and filter and collect the filtrate, and separate the filtrate by silica gel column chromatography, and use petroleum ether and ethyl acetate (volume ratio of 10:1) as the eluent; finally, 538mg of solid product, namely compound M1-1, is obtained with a yield of 80%. 1 H NMR(500MHz,Chloroform-d)δ8.15-8.10(m,2H),7.60-7.52(m,2H),7.39-7.33(m,2H),7.33-7.25(m,2 H), 4.19-4.12 (m, 2H), 4.07 (t, J = 6.2Hz, 4H), 1.76-1.64 (m, 6H), 1.41-1.21 (m, 26H), 0.94-0.85 (m, 9H).

[0073] In the second embodiment, the preparation of organic compound M1-2:

[0074]

[0075] The synthesis of organic compound M1-2 is similar to that of M1-1, except that in the preparation of M1-1, 1-bromooctane in step 1 is replaced by 1-butoxy-4-iodobenzene (CAS: 96693-04-8), and 1-bromohexane in step 4 is replaced by 1-bromoethane. The reaction conditions and the amount of substance are not changed, and finally a light yellow solid product M1-2 is obtained. 1 H NMR(500MHz,Chloroform-d)δ8.17-8.11(m,2H),7.60-7.53(m,2H),7.50-7.44(m,2H),7.44-7.37(m,2H),7.38-7.31(m,2H),7.08-7 .02(m,2H),4.25(t,J=7.1Hz,4H),3.98(t,J=6.1Hz,2H),1.81-1.72(m,2H),1.55-1.44(m,2H),1.38-1.31(m,6H),1.01-0.94(m,3H).

[0076] In the third embodiment, the preparation of organic compound M2-1:

[0077]

[0078] Compound M1-1 (1 mmol, 673 mg) was added to a 100 mL two-necked bottle and dissolved in 40 mL chloroform. N-bromosuccinimide (NBS) (3 mmol, 534 mg) was dissolved in 10 mL chloroform and 40 mL chloroform. The mixture was stirred for 3 h in an ice bath. The reaction was stopped when the raw materials were completely reacted by monitoring by thin layer chromatography (TLC). The reaction solution was distilled under reduced pressure to remove the solvent. The crude product was mixed with 200 to 300 mesh silica gel and separated by column chromatography. The mobile phase was petroleum ether: ethyl acetate (volume ratio of 10:1) to obtain a crude intermediate product. The intermediate product (1 mmol, 829 mg), phenoxazine (3 mmol, 501 mg), Pd2(dba)3(0 .05mmol, 50mg) and sodium tert-butoxide (5mmol, 480mg) and tert-butylphosphine (5mmol, 450mg), then add 40mL of redistilled toluene, pass nitrogen, use a vacuum pump to evacuate and replace with nitrogen for 15 minutes, cover the reaction bottle with tin foil to avoid light, stir and heat to 110°C for reaction for 24h, stop the reaction, and cool to room temperature, extract the reaction solution, use dichloromethane (1000mL) and water (250mL) to wash repeatedly 3 to 4 times, and the organic phase is dried with anhydrous magnesium sulfate, and crude separation is performed by column chromatography, the developing agent is petroleum ether: dichloromethane: acetone (volume ratio is 20:2:1), and the organic compound M1 is obtained as a white solid 702mg, and the yield is 70%. 1 H NMR(500MHz,Chloroform-d)δ8.15-8.11(m,2H),7.59-7.54(m,1H),7.40-7. 36(m,1H),7.33-7.28(m,1H),7.24-7.20(m,1H),7.17-7.15(m,1H),7.13-7.0 6(m,6H),6.72-6.68(m,2H),4.15(t,J=6.3Hz,2H),4.11(t,J=6.2Hz,2H),4.0 7(t,J=6.2Hz,2H),1.74-1.65(m,6H),1.39-1.25(m,22H),0.92-0.87(m,9H).

[0079] In the fourth embodiment, the preparation of organic compound M2-10:

[0080]

[0081] The synthesis of organic compound M2-10 in this example is similar to that of M2-1, except that compound M1-1 is replaced by M1-2 in Example 5, and phenoxazine is replaced by 10-methyl-10-hydrogen-phenothiazine (the feed ratio is doubled), and the other reaction conditions and the amount of substances are not changed, and finally a light yellow solid product M2-10 is obtained. C60H49N5O5S4: 1047.2617

[0082] In some embodiments, the HOMO energy level of M2-10 is in the range of -4 eV to -6 eV, and the HOMO energy level of M1-2 is in the range of -5 eV to -7 eV, which has good energy level matching with the ultraviolet absorbing material.

[0083] In some specific embodiments, the HOMO energy levels of some ultraviolet absorbing materials are: the HOMO energy level of TiO2 is in the range of -7.5eV to -7.9eV; the HOMO energy level of CeO2 is in the range of -6eV to -7eV; the HOMO energy level of CaCO3 is in the range of -7eV to -8eV; the HOMO energy level of SiO2 is in the range of -7.5eV to -8.5eV; the HOMO energy level of ZrO2 is in the range of -8.0 to -9.0eV; the HOMO energy level of Al2O3 is in the range of -8.5eV to -9.5eV; the HOMO energy level of Zn2SiO4 may be in the range of -6.5eV to -7.5eV; the HOMO energy level of CdS is in the range of -6.0eV to -7.0eV; the HOMO energy level of GaAs is in the range of -7.0 to -8.0eV; the HOMO energy level of phenolphthalein violet is in the range of -6eV to -7eV; the HOMO energy level of polycarbonate is in the range of -6eV to -7eV; the HOMO energy level of ethylene terephthalate is in the range of -6.5eV to -7.5eV.

[0084] In some embodiments, in order to further improve the matching of the electronic functional layer 30 and the first functional layer 70 , the material of the first functional layer 70 may be ligand modified to adjust its energy level so that it better matches the electronic functional layer 30 .

[0085] In some specific embodiments, ligand modification can be performed on the surface of the material according to the following corresponding relationship: the ligand of TiO2 is nitrate ion (NO3 - ), the corresponding ligand raw material can be nitrate; the ligand of CeO2 is sulfate ion (SO4 2- ), the corresponding ligand raw material can be sulfate; the ligand of CaCO3 is amino group (-NH2) and the corresponding ligand can be organic amine; the ligand of SiO2 is nitrate ion (NO3 - ), the corresponding ligand raw material can be nitrate; the ligand of ZrO2 is chloride ion (Cl -), the corresponding ligand raw materials can be chloride salts, organic chlorides; Al2O3 bromide ions (Br - ), the corresponding ligand raw material can be bromide salt, organic bromide; the ligand of Zn2SiO4 is fluoride ion (F - ), the corresponding ligand raw material can be an organic fluoride; the ligand of CdS is sulfate ion (SO4 2- ), and its corresponding ligand raw material can be sulfate; the ligand of GaAs is amino (-NH2), and its corresponding ligand can be organic amine. In actual preparation, the conventional ligand introduction method in the art can be adopted, for example, the ultraviolet absorption material and the ligand raw material can be dispersed in a solvent and heated at 75-90°C for 20-40min.

[0086] It can be understood that the photoelectric device 100 can be a normal device or an inverted device. Depending on the type of device, the bottom electrode and the top electrode can have different choices. Specifically, the bottom electrode can be one of the anode 10 and the cathode 40, and the top electrode is the other of the anode 10 and the cathode 40. When the device is a normal device, the bottom electrode is the anode 10 and the top electrode is the cathode 40. When the device is an inverted device, the bottom electrode is the cathode 40 and the top electrode is the anode 10.

[0087] In some embodiments, the anode 10 may be an anode 10 for a photoelectric device 100 known in the art, for example, it may be selected from but not limited to any one of a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode, and a composite electrode; wherein the material of the metal electrode includes at least one of Al, Ag, Cu, Co, Cr, Fe, Mn, V, Mo, Au, Ba, Ca, Ni, Ir, and Mg; the material of the carbon electrode includes at least one of graphite, carbon nanotubes, graphene, and carbon fiber; the material of the doped or undoped metal oxide electrode includes I At least one of TO, FTO, ATO, AZO, GZO, IZO, MZO, ITZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, and Ga:SnO2; the material of the composite electrode is selected from one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS.

[0088] The cathode 40 may be a cathode 40 for the optoelectronic device 100 known in the art, for example, it may be selected from but not limited to any one of a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode and a composite electrode; wherein the material of the metal electrode includes at least one of Al, Ag, Cu, Co, Cr, Fe, Mn, V, Mo, Au, Ba, Ca, Ni, Ir and Mg; the material of the carbon electrode includes at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode includes ITO, F At least one of TO, ATO, AZO, GZO, IZO, MZO, ITZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, and Ga:SnO2; the material of the composite electrode is selected from one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, and ZnS / Al / ZnS.

[0089] It is understood that multiple film layers may be provided between the anode 10 and the cathode 40, including but not limited to the light-emitting layer 20, the hole functional layer, etc. The light-emitting layer 20 is located between the anode 10 and the electronic functional layer 30; the hole functional layer is located between the anode 10 and the electronic functional layer 30; when the light-emitting layer 20 and the hole functional layer exist at the same time, the hole functional layer is located between the light-emitting layer 20 and the anode 10.

[0090] There are many options for the specific position of the first functional layer 70, and it is only necessary to ensure that it is located above the electronic functional layer 30 (i.e., between the electronic functional layer 30 and the top electrode). For example, in some embodiments, the optoelectronic device 100 is a positive device, the bottom electrode is the anode 10, and the top electrode is the cathode 40. In this case, the first functional layer 70 can be disposed between the cathode 40 and the electronic functional layer 30.

[0091] See also Figure 1 and 2 In some embodiments, when the upright device further includes a light-emitting layer 20 and / or a hole functional layer, the light-emitting layer 20 and / or the hole functional layer are both disposed between the electronic functional layer 30 and the bottom electrode (anode 10). Figure 3 In other embodiments, the optoelectronic device 100 is an inverted device, the bottom electrode is the cathode 40, and the top electrode is the anode 10. In this case, the first functional layer 70 can be arranged between the electronic functional layer 30 and the light-emitting layer 20, that is, the light-emitting layer 20 is located between the first functional layer 70 and the top electrode (anode 10).

[0092] In some embodiments, the material of the light-emitting layer 20 includes a quantum dot light-emitting material; the quantum dot light-emitting material includes at least one of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material, the single structure quantum dot includes at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound, the II-VI group compound includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, At least one of HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, Sn at least one of PbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, and the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, and G At least one of aAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes at least one of CuInS, CuInSe and AgInS; the core of the quantum dots with a core-shell structure is selected from any one of the above-mentioned single-structure quantum dots, and the shell material of the quantum dots with a core-shell structure is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS.

[0093] As an example, the core-shell structured quantum dots may be selected from but not limited to at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0094] It should be noted that, for the material of the aforementioned single structure quantum dot, or the material of the core of the core-shell structure quantum dot, or the material of the shell of the core-shell structure quantum dot, the chemical formula provided only indicates the elemental composition, but does not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0095] The perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of .

[0096] After blocking the ultraviolet light, the first functional layer 70 absorbs the ultraviolet energy and converts it into heat energy, which means that the adjacent film layers, such as the light-emitting layer 20, may be affected by high temperature. Figure 2 and Figure 3 In some embodiments, the optoelectronic device 100 further includes a second functional layer 80, which is disposed between the first functional layer 70 and the light-emitting layer 20; the thermal conductivity of the material of the second functional layer 80 is less than or equal to 0.1 W / mK. The introduction of the second functional layer 80 between the first functional layer 70 and the light-emitting layer 20 can play a role in heat insulation, thereby preventing high temperature from damaging the material of the light-emitting layer 20.

[0097] In some embodiments, the material of the second functional layer 80 includes a two-dimensional material, and the two-dimensional material includes one or more of transition metal disulfide, nano mullite, indium phosphide and graphene. The lattice vibration and phonon transmission in the two-dimensional material are limited, so that it has a lower thermal conductivity, and the two-dimensional material is a sheet material with an atomic-level thickness, so that they have a natural heat insulation ability during heat transfer; moreover, these two-dimensional materials have a large specific surface area and a high surface roughness, which also makes it easy for heat to scatter during the transfer process, thereby reducing the heat transfer efficiency; so that the second functional layer 80 can still play a good heat insulation effect in a thinner state.

[0098] The thickness of the second functional layer 80 is greater than 0 nm and less than or equal to 5 nm, for example, 0.01 nm, 0.05 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, and any value between two of the above values, which can not only fully exert the heat insulation effect, but also help improve the electron injection effect.

[0099] In some embodiments, the optoelectronic device 100 further includes a hole functional layer disposed between the light-emitting layer 20 and the anode 10, and the hole functional layer includes one or two layers of a hole transport layer 50 and a hole injection layer 60. It should be noted that when the hole functional layer includes two layers of the hole transport layer 50 and the hole injection layer 60, the hole transport layer 50 is located between the hole injection layer 60 and the light-emitting layer 20. The material of the hole functional layer can be a material commonly used in the art that has hole injection or transport properties. For example, in some embodiments, the material of the hole transport layer 5050 includes but is not limited to 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1' -biphenyl)-4,4'-diamine (TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro(spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), tris(3-methylphenylphenylamino)-triphenylamine (m-MTDATA), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butyl)- poly(4-butylphenyl)diphenylamine))] (TFB) and poly(4-butylphenyl-diphenylamine) (poly-TPD), polyaniline, polypyrrole, poly(p-phenylenevinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MOMO-PPV), copper phthalocyanine, aromatic tertiary amines, multinuclear One or more of aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, poly(N-vinylcarbazole) (PVK) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB), and spiro NPB.The material of the hole injection layer 6060 may include, but is not limited to, poly(ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), poly(9,9-dioctyl-fluorene-co-N-(4-butylphenyl)-diphenylamine) (TFB), polyarylamine, poly(N-vinylcarbazole), polyaniline, polypyrrole, N,N,N',N'-tetrakis(4-methoxyphenyl)-benzidine (TPD), 4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl (α-NPD), 4,4',4"-tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA ... One or more of 4″-tri(N-carbazolyl)-triphenylamine (TCTA), 1,1-bis[(di-4-tolylamino)phenylcyclohexane (TAPC), 4,4′,4″-tri(diphenylamino)triphenylamine (TDATA) doped with tetrafluoro-tetracyano-quinodimethane (F4-TCNQ), p-doped phthalocyanine (e.g., F4-TCNQ-doped zinc phthalocyanine (ZnPc)), F4-TCNQ-doped N,N′-diphenyl-N,N′-di(1-naphthyl)-1,1′-biphenyl-4,4″-diamine (α-NPD), and hexaazatriphenylene-capronitrile (HAT-CN).

[0100] It is understandable that the optoelectronic device 100 may also be provided with some functional layers conventionally used in optoelectronic devices 100 that help improve the performance of the optoelectronic device 100, such as an electron injection layer, an electron blocking layer, an interface modification layer, etc.

[0101] It can be understood that the material and thickness of each layer of the optoelectronic device 100 can be adjusted according to the actual requirements of the optoelectronic device 100 .

[0102] In some embodiments, the optoelectronic device 100 may further include an encapsulation layer, which is disposed on a side of the top electrode away from the first functional layer 70 and covers the top electrode. The material of the encapsulation layer includes but is not limited to epoxy resin, acrylate glue, polyurethane glue, silicone rubber, etc.

[0103] Based on the above-mentioned embodiment of the optoelectronic device 100, a method for preparing the optoelectronic device 100 is further proposed, and the preparation method includes:

[0104] S10, providing a bottom electrode;

[0105] S20, disposing a functional film layer on one side of the bottom electrode, wherein the functional film layer includes an electronic functional layer 30 and a first functional layer 70;

[0106] S30, disposing a top electrode on a side of the functional film layer away from the bottom electrode to obtain a photoelectric device 100;

[0107] The preparation of the first functional layer 70 includes: providing an ultraviolet absorbing material, and depositing the ultraviolet absorbing material to obtain the first functional layer 70 .

[0108] The material of the electronic functional layer 30 includes a first compound having a structure shown in formula (I):

[0109]

[0110] wherein R1, R2, and R3 are each independently selected from H, D, a halogen atom, a substituted or unsubstituted C1-C 30 Alkyl, substituted or unsubstituted C1~C 30 Alkoxy, substituted or unsubstituted C7~C 36 Phenylalkyl, substituted or unsubstituted C7~C 36 One or more of phenylalkoxy groups;

[0111] Ar1 and Ar2 are each independently selected from the following structures:

[0112]

[0113] Wherein, D1, D3, D4, and D5 are selected from substituted or unsubstituted aryl groups having 6 to 60 ring atoms, substituted or unsubstituted heteroaryl groups having 5 to 60 ring atoms, or a combination thereof;

[0114] D2 is selected from H, D, a substituted or unsubstituted aryl group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms, or a combination thereof;

[0115] n1 and n2 are each independently selected from integers of 0-4.

[0116] Wherein, the ultraviolet absorption rate of the ultraviolet absorption material is greater than or equal to 85%.

[0117] In some embodiments, the ultraviolet absorbing material includes one or more of titanium dioxide, cerium oxide, calcium carbonate, silicon dioxide, zirconium dioxide, aluminum oxide, zinc silicate, cadmium sulfide, gallium arsenide, phenolphthalein, polycarbonate, and polyethylene terephthalate.

[0118] In some embodiments, the optoelectronic device 100 further includes a light-emitting layer 20 and a second functional layer 80. Accordingly, in step S20, the preparation of the functional film layer further includes:

[0119] S21, providing a quantum dot luminescent material, and depositing the quantum dot luminescent material to obtain a luminescent layer 20; and,

[0120] S22, providing a second functional layer 80 material, depositing the second functional layer 80 material to obtain the second functional layer 80, wherein the thermal conductivity of the second functional layer 80 material is less than or equal to 0.1 W / mK.

[0121] When the functional film layers are actually prepared, each film layer is prepared in sequence according to the film layer sequence preset in the device. Accordingly, when the deposition steps in steps S21 and S22 are performed, the quantum dot luminescent material is deposited on the film layer above the luminescent layer 20, and the second functional layer 80 material is deposited on the film layer above the second functional layer 80. The above film layer refers to the film layer located below the film layer to be prepared in the designed optoelectronic device 100, or refers to the film layer located in the previous process of the film layer to be prepared in the preparation process. For example, in some embodiments, the photoelectric device 100 includes an anode 10, a hole injection layer 60, a hole transport layer 50, a light-emitting layer 20, a second functional layer 80, an electron transport layer, a first functional layer 70, and a cathode 40 stacked in sequence from bottom to top, wherein the upper film layer of the light-emitting layer 20 is the hole transport layer 50, and the upper film layer of the second functional layer 80 is the light-emitting layer 20; in other embodiments, the photoelectric device 100 includes an anode 10, a hole injection layer 60, a hole transport layer 50, a light-emitting layer 20, a second functional layer 80, an electron transport layer, a first functional layer 70, and a cathode 40 stacked in sequence from top to bottom, wherein the upper film layer of the light-emitting layer 20 is the second functional layer 80, and the upper film layer of the second functional layer 80 is the electron transport layer.

[0122] In some embodiments, the material of the second functional layer 80 includes a two-dimensional material, and the two-dimensional material includes one or more of transition metal disulfide, nano-mullite, indium phosphide and graphene.

[0123] Each film layer can be realized by conventional techniques in the art, such as chemical methods or physical methods. Among them, chemical methods include chemical vapor deposition, continuous ion layer adsorption and reaction, anode 10 oxidation, electrolytic deposition, and coprecipitation. Physical methods include physical coating and solution methods, among which physical coating includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion coating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; solution methods can be spin coating, printing, inkjet printing, blade coating, printing, dip-coating, immersion, spraying, roll coating, casting, slit coating, and strip coating, etc.

[0124] In some embodiments, in the step of depositing the ultraviolet absorbing material to obtain the first functional layer 70 , physical vapor deposition is used for deposition.

[0125] In some embodiments, the preparation of the electronic functional layer 30 may include the following steps: dispersing the first compound in an alcohol solvent to form a mixed solution; depositing the mixed solution on the upper film layer, and heating and curing to obtain the electronic functional layer 30. The concentration of the first compound in the mixed solution is 5 to 50 mg / ml; the heating temperature during heating and curing is 40 to 80° C., and the heating time is 10 to 30 min.

[0126] In some embodiments, the step of depositing the material of the second functional layer 80 to obtain the second functional layer 80 may be implemented by the following steps:

[0127] S221, providing a substrate;

[0128] S222, depositing the material of the second functional layer 80 on the substrate to obtain a substrate with a solid film deposited thereon;

[0129] S223, removing the substrate to obtain a solid film;

[0130] S224, transferring the solid film onto a target film layer to obtain a second functional layer 80;

[0131] Wherein, the target film layer includes the light-emitting layer 20 or the first functional layer 70 .

[0132] In some embodiments, the material of the substrate may be metal such as copper, nickel, platinum, or indium phosphide.

[0133] In step S222, the deposition method may be a physical method or a chemical method. In some embodiments, the second functional layer 80 material is deposited by chemical vapor deposition to form a solid film.

[0134] In step S224, before transferring the solid film to the target film layer, the substrate needs to be processed to obtain a separate solid film. In some embodiments, the substrate can be corroded by an etchant. In some specific embodiments, when the substrate is a copper substrate, the etchant that can be used is an aminosulfonic acid solution with a concentration of about 1 to 10 g / L; when the substrate is a nickel substrate, the etchant that can be used is a nitric acid solution with a concentration of about 1 to 10 g / L; when the substrate is an indium phosphide substrate, the etchant that can be used is a mixed solution of boric acid and phosphoric acid; when the substrate is a platinum substrate, the etchant that can be used is aqua regia.

[0135] In some embodiments, step S224 includes:

[0136] S2241, providing a liquid medium, transferring the solid film into the liquid medium, wherein the solid film floats on the surface of the liquid medium;

[0137] S2242, moving the target film layer to below the solid film, and controlling the target film layer to contact with the solid film.

[0138] Wherein, the liquid medium can be water, or other solvents that do not dissolve the solid film or the target film layer. The solid film made of two-dimensional materials has a low surface energy in this liquid medium and can naturally float on the surface of the liquid medium; by utilizing the surface tension of the liquid medium to float the solid film from the substrate, then moving the target film layer to the bottom of the floated solid film, and finally transferring the material to the target film layer, the preparation of the second functional layer 80 can be achieved. In specific implementation, the contact between the solid film and the target film layer can be observed with the aid of equipment such as an optical microscope to ensure good contact between the two. After the solid film contacts the target film layer, it is taken out of the liquid medium and dried. Methods such as nitrogen purging or oven drying are usually used to remove surface moisture. During the drying process, the solid film will gradually be tightly combined with the target film layer to form a stable heterogeneous structure.

[0139] In addition, the present application also proposes a display device, which includes the optoelectronic device 100 as described above, or includes the optoelectronic device 100 manufactured by the manufacturing method as described above.

[0140] The display device can be any electronic product with a display function, including but not limited to smart phones, portable phones, tablet computers, personal digital assistants (PDA), portable multimedia players (Portable Multimedia Player), televisions, game consoles, watch-type electronic devices, head-mounted displays, personal computer displays, laptop computers, car navigation systems, car dashboards, digital cameras, portable cameras, external advertising boards, electro-optical panels, medical devices, detection devices, refrigerators, washing machines, etc.

[0141] The technical scheme and technical effects of the present application are described in detail below through specific embodiments and comparative examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0142] Example 1

[0143] The QLED device of this embodiment is a positive device, and the film layers are stacked in the order of anode, hole injection layer, hole transport layer, light-emitting layer, second functional layer, electron transport layer, first functional layer, and cathode. The device is prepared as follows:

[0144] (1) PEDOT:PSS was spin-coated on the ITO anode at a rotation speed of 5000 rpm for 30 s, followed by heating at 150°C for 15 min to obtain a hole injection layer with a thickness of 30 nm.

[0145] (2) Spin-coat the hole injection layer with TFB chlorobenzene solution (concentration of 8 mg / ml) at a rotation speed of 3000 rpm for 30 s, and then heat at 120° C. for 10 min to obtain a hole transport layer with a thickness of 35 nm.

[0146] (3) A hexane solution (concentration of 20 mg / ml) of CdZnS quantum dots (emission wavelength of 545 nm, green light quantum dots) was spin-coated on the surface of the hole transport layer at a speed of 2000 rpm for 30 s, and then heated at 80°C for 5 min to obtain a light-emitting layer with a thickness of 20 nm.

[0147] (4) A second functional layer with a thickness of 3 nm is prepared on the light-emitting layer, and the preparation method is as follows: a graphene film with a thickness of 3 nm is prepared on a copper foil by chemical vapor deposition; the copper foil with the graphene film deposited thereon is immersed in a 5 g / L aminosulfonic acid solution, and allowed to stand for 2 h until the copper foil substrate is completely removed, thereby obtaining a separate graphene film; the graphene film is transferred to anhydrous ethanol, and the film floats on the surface of the ethanol; the semi-finished device obtained in step (3) is moved to the bottom of the floating graphene film, so that the graphene film contacts the light-emitting layer, and after the graphene film is tightly attached to the light-emitting layer, it is dried and the ethanol on the surface is removed by nitrogen purge, thereby obtaining a second functional layer stably bonded to the surface of the light-emitting layer.

[0148] (5) Compound M1-2 was dispersed in ethanol to prepare a first compound solution with a concentration of 40 mg / ml. The first compound solution was spin-coated on the second functional layer at a spin coating speed of 4000 rpm for 30 seconds to obtain an electron transport layer with a thickness of 35 nm.

[0149] (6) TiO2 modified with nitrate is sputtered on the surface of the electron transport layer to obtain a TiO2 thin film with a thickness of 20 nm to obtain the first functional layer.

[0150] (7) Ag was evaporated on the surface of the first functional layer to form a cathode with a thickness of 20 nm to obtain a device. Then, the device was encapsulated with epoxy resin and UV-cured at a UV intensity of 150 mW / cm 2 ; Obtain a positive QLED device.

[0151] Device Example 2

[0152] The embodiment of the device is basically the same as that of Embodiment 1, except that:

[0153] In step (6), the material of the first functional layer is changed to CeO2;

[0154] Correspondingly, in step (5), the first compound is changed to compound M2-10.

[0155] Device Example 3

[0156] The embodiment of the device is basically the same as that of Embodiment 1, except that:

[0157] In step (6), the material of the first functional layer is changed to Zn2SiO4.

[0158] Device Example 4

[0159] The embodiment of the device is basically the same as that of Embodiment 1, except that:

[0160] In step (6), the material of the first functional layer is changed to CdS.

[0161] Device Example 5

[0162] The embodiment of the device is basically the same as that of Embodiment 1, except that:

[0163] In step (6), the material of the first functional layer is changed to GaAs.

[0164] Device Example 6

[0165] The embodiment of the device is basically the same as that of Embodiment 1, except that:

[0166] The device is adjusted to an inverted device, and the order of the film layers is changed to cathode, electron transport layer, first functional layer, second functional layer, light-emitting layer, hole transport layer, hole injection layer, and anode. Correspondingly, the preparation method of each film layer is the same as that of device embodiment 1, and the order of film layer preparation is changed to cathode, electron transport layer, first functional layer, second functional layer, light-emitting layer, hole transport layer, hole injection layer, and anode.

[0167] Device Example 7

[0168] The device embodiment scheme is basically the same as embodiment 1, with the only difference being that in the device embodiment: in step (4), the material of the second functional layer is changed from graphene to transition metal disulfides (TMDCs).

[0169] Device Example 8

[0170] The device embodiment scheme is basically the same as the embodiment 1, and the only difference is that in the device embodiment: in step (4), the material of the second functional layer is changed from graphene to indium phosphide (InP).

[0171] Device Example 9

[0172] The embodiment of the device is basically the same as that of Embodiment 1, except that:

[0173] The QLED device does not have a second functional layer, and accordingly, step (4) is omitted and the electron transport layer is directly prepared on the light-emitting layer.

[0174] Device Example 10

[0175] The device embodiment scheme is basically the same as Example 1, with the only difference being that in the device embodiment, the electron transport layer is prepared using zirconium dioxide, and accordingly, in step (5), compound M1-2 is changed to zirconium dioxide.

[0176] Device Comparison Example 1

[0177] The device comparative example scheme is basically the same as device embodiment 1, with the only difference being that in the device comparative example, the QLED device does not have the first functional layer and the second functional layer, and accordingly, steps (4) and (6) are omitted.

[0178] Device Comparison Example 2

[0179] The device comparative scheme is basically the same as device embodiment 6, the only difference is that in the device comparative scheme, the first functional layer is arranged on the hole side of the light-emitting layer. Correspondingly: the film layer sequence of the device is changed to cathode, electron transport layer, light-emitting layer, second functional layer, first functional layer, hole transport layer, hole injection layer, and anode stacked in sequence; the preparation method of each film layer is the same as device embodiment 6, and the film layer preparation sequence is changed to cathode, electron transport layer, light-emitting layer, second functional layer, first functional layer, hole transport layer, hole injection layer, and anode.

[0180] Device Comparison Example 3

[0181] The device comparative example scheme is basically the same as device embodiment 10, with the only difference being that in the device comparative example, the QLED device does not have the first functional layer and the second functional layer, and accordingly, steps (4) and (6) are omitted.

[0182] Experimental example

[0183] The devices prepared in the above device embodiments and device comparative examples were tested for their CE (current efficiency), maximum brightness L max , T95 and T95 1000nits. The results are recorded in Table 1.

[0184] Life test refers to the time taken for the device brightness to decay to a certain percentage of the maximum brightness under 2mA constant current drive. The time taken for the brightness to decay to 95% of the maximum brightness is defined as T95, and this life is the measured life. In order to shorten the life test cycle, the device life test is usually carried out at high brightness by accelerating device aging, and the life at low brightness is obtained by fitting the decay fitting formula. For example, the life at 1000nits is recorded as T95 1000nits, and the calculation formula is:

[0185]

[0186] Among them, T95 L The lifespan under low brightness, generally 1000nits, T95 H is the lifespan under high brightness, that is, the measured lifespan, L H is the maximum brightness that the device is accelerated to, L L Generally it is 1000nits, A is the acceleration factor, which is 1.7.

[0187] Table 1

[0188] <![CDATA[L max (nit)]]> T95(h) T95 1000nits(h) CE(cd / A) Device Example 1 134080 17.27 71419 210.5056 Device Example 2 133221 16.96 69374 209.157 Device Example 3 133718 17.2 70803 209.9373 Device Example 4 132680 16.95 68856 208.3076 Device Example 5 130467 16.93 66836 204.8332 Device Example 6 110540 22.34 66537 173.5478 Device Example 7 132743 17.02 69196 208.4065 Device Example 8 131509 17.11 68466 206.4691 Device Example 9 120480 15.02 51788 189.1536 Device Example 10 127530 15.94 60538 200.2221 Device Comparison Example 1 108630 14.28 41290 170.5491 Device Comparison Example 2 40570 1.58 856 63.6949 Device Comparison Example 3 74060 7.59 11443 116.2742

[0189] Refer to Table 1, we can see that:

[0190] Compared with device comparative examples 1 and 3, each device embodiment has higher CE, L max , T95 and T951000nits, indicating that by arranging the first functional layer on the upper side of the electron transport layer to block ultraviolet light and arranging the second functional layer between the light-emitting layer and the first functional layer, it is helpful to improve the light-emitting effect and service life of the device; in addition, the CE and L values ​​of device embodiment 1 are significantly higher than those of device embodiment 10. max , T95 and T95 1000nits, indicating that the electron transport layer prepared by the first compound is matched with the first functional layer, which is more conducive to improving the luminous effect and service life of the device;

[0191] Furthermore, the device embodiment 1 has significantly higher CE and L than the device embodiment 9. max , T95 and T951000nits, indicating that the setting of the second functional layer can effectively insulate heat when the first functional layer absorbs ultraviolet light and generates heat, thus preventing the light-emitting layer from being damaged, and helping to further improve the performance of the device;

[0192] In addition, by comparing device example 6, device comparative example 1, and device comparative example 2, it can be seen that in CE, L max, T95 and T95 1000nits, device comparison example 2 shows a decrease compared with device comparison example 1. This may be because when there are other film layers between the bottom electrode and the top electrode in addition to the electronic functional layer and the first functional layer, and the first functional layer is located between the other film layers instead of being adjacent to the electronic functional layer, there will be an energy level mismatch problem, which is likely to affect the device performance.

[0193] The optoelectronic devices, preparation methods and display devices provided in the embodiments of the present application are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the methods and core ideas of the present application. At the same time, for technicians in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, characterized in that: The optoelectronic device comprises a bottom electrode, an electronic functional layer and a top electrode, wherein the optoelectronic device further comprises a first functional layer, wherein the first functional layer is arranged between the top electrode and the electronic functional layer; Wherein, the material of the first functional layer includes ultraviolet absorption material.

2. The optoelectronic device according to claim 1, characterized in that: The ultraviolet absorption rate of the ultraviolet absorption material is greater than or equal to 85%; and / or, The thickness of the first functional layer is 10-20 nm.

3. The optoelectronic device according to claim 1, characterized in that: The ultraviolet absorption material includes one or more of titanium dioxide, cerium oxide, calcium carbonate, silicon dioxide, zirconium dioxide, aluminum oxide, zinc silicate, cadmium sulfide, gallium arsenide, phenolphthalein purple, polycarbonate, and polyethylene glycol phthalate.

4. The optoelectronic device according to claim 1, characterized in that: The material of the electronic functional layer includes at least one of a first compound, a titanate, a metal oxide, a doped metal oxide, a II-VI semiconductor material, a III-V semiconductor material and an I-III-VI semiconductor material, wherein the metal oxide is selected from at least one of ZnO, BaO, TiO2 and SnO2; the metal oxide in the doped metal oxide is selected from at least one of ZnO, TiO2 and SnO2, the doping element is selected from at least one of Al, Mg, Li, In and Ga, the II-VI semiconductor material is selected from at least one of ZnS, ZnSe and CdS; the III-V semiconductor material is selected from at least one of InP and GaP; the I-III-VI semiconductor material is selected from at least one of CuInS and CuGaS; the first compound has a structure shown in formula (I): wherein R1, R2, and R3 are each independently selected from H, D, a halogen atom, a substituted or unsubstituted C1-C 30 Alkyl, substituted or unsubstituted C1~C 30 Alkoxy, substituted or unsubstituted C7~C 36 Phenylalkyl, substituted or unsubstituted C7~C 36 One or more of phenylalkoxy groups; Ar1 and Ar2 are each independently selected from the following structures: *-D2； Wherein, D1, D3, D4, and D5 are selected from substituted or unsubstituted aryl groups having 6 to 60 ring atoms, substituted or unsubstituted heteroaryl groups having 5 to 60 ring atoms, or a combination thereof; D2 is selected from H, D, a substituted or unsubstituted aryl group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms, or a combination thereof; n1 and n2 are each independently selected from integers of 0-4.

5. The optoelectronic device according to claim 4, characterized in that: The material of the electronic functional layer includes one or more of the first compounds; and / or, The first compound includes one or more of the following structural formulas:

6. The optoelectronic device according to claim 1, characterized in that: The optoelectronic device further comprises a second functional layer, wherein the second functional layer is disposed between the first functional layer and the bottom electrode; The thermal conductivity of the material of the second functional layer is less than or equal to 0.1 W / mK.

7. The optoelectronic device according to claim 6, characterized in that: The material of the second functional layer includes a two-dimensional material, and the two-dimensional material includes one or more of transition metal disulfide, nano-mullite, indium phosphide and graphene; and / or, The thickness of the second functional layer is greater than 0 nm and less than or equal to 5 nm.

8. The optoelectronic device according to claim 1, characterized in that: The optoelectronic device also includes a light-emitting layer, which is arranged between the bottom electrode and the electronic functional layer, or between the first functional layer and the top electrode; the material of the light-emitting layer includes a quantum dot light-emitting material; the quantum dot light-emitting material includes at least one of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material, the single structure quantum dot includes at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound, the II-VI group compound includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSe At least one of CdS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, and CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; and the Group IV-VI compound comprises SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, and e, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlN At least one of Sb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes at least one of CuInS, CuInSe and AgInS; the core of the quantum dots of the core-shell structure is selected from any one of the above-mentioned single-structure quantum dots, and the shell material of the quantum dots of the core-shell structure is selected from at least one of CdS, CdTe, CdSeTe, CdZnSe, CdZnS, CdSeS, ZnSe, ZnSeS and ZnS;The perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs; + ion, M is a divalent metal cation selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of, X is a halogen anion selected from Cl - Br - ,I - At least one of; and / or, The bottom electrode and the top electrode are independently selected from any one of a metal electrode, a carbon electrode, a doped or undoped metal oxide electrode and a composite electrode; wherein the material of the metal electrode includes at least one of Al, Ag, Cu, Co, Cr, Fe, Mn, V, Mo, Au, Ba, Ca, Ni, Ir and Mg; the material of the carbon electrode includes at least one of graphite, carbon nanotubes, graphene and carbon fiber; the material of the doped or undoped metal oxide electrode includes ITO, FTO, ATO, AZO, At least one of GZO, IZO, MZO, ITZO, ICO, AMO, SnO2, In2O3, Cd:ZnO, Ga:SnO2; the material of the composite electrode is selected from one of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS and ZnS / Al / ZnS.

9. A method for preparing a photoelectric device, characterized in that: The following steps are involved: providing a bottom electrode; A functional film layer is arranged on one side of the bottom electrode, wherein the functional film layer comprises an electronic functional layer and a first functional layer; Disposing a top electrode on a side of the functional film layer away from the bottom electrode to obtain a photoelectric device; The preparation of the first functional layer includes: providing an ultraviolet absorbing material, and depositing the ultraviolet absorbing material to obtain the first functional layer.

10. The preparation method according to claim 9, characterized in that: The ultraviolet absorption rate of the ultraviolet absorption material is greater than or equal to 85%.

11. The preparation method according to claim 10, characterized in that: In the step of depositing the ultraviolet absorbing material to obtain the first functional layer, physical vapor deposition is used for deposition; and / or, The ultraviolet absorption material includes one or more of titanium dioxide, cerium oxide, calcium carbonate, silicon dioxide, zirconium dioxide, aluminum oxide, zinc silicate, cadmium sulfide, and gallium arsenide; and / or, The material of the electronic functional layer includes one or more of the first compounds, and the first compound has a structure shown in formula (I): wherein R1, R2, and R3 are each independently selected from H, D, a halogen atom, a substituted or unsubstituted C1-C 30 Alkyl, substituted or unsubstituted C1~C 30 Alkoxy, substituted or unsubstituted C7~C 36 Phenylalkyl, substituted or unsubstituted C7~C 36 One or more of phenylalkoxy; Ar1 and Ar2 are each independently selected from the following structures: *-D2； Wherein, D1, D3, D4, and D5 are selected from substituted or unsubstituted aryl groups having 6 to 60 ring atoms, substituted or unsubstituted heteroaryl groups having 5 to 60 ring atoms, or a combination thereof; D2 is selected from H, D, a substituted or unsubstituted aryl group having 6 to 60 ring atoms, a substituted or unsubstituted heteroaryl group having 5 to 60 ring atoms, or a combination thereof; n1 and n2 are each independently selected from integers of 0-4.

12. The preparation method according to claim 9, characterized in that: The preparation of the functional film layer also includes: Providing a quantum dot luminescent material, depositing the quantum dot luminescent material to obtain a luminescent layer; and, A second functional layer material is provided, and the second functional layer material is deposited to obtain a second functional layer, wherein the thermal conductivity of the second functional layer material is less than or equal to 0.1 W / mK.

13. The preparation method according to claim 12, characterized in that: The second functional layer material includes a two-dimensional material, and the two-dimensional material includes one or more of transition metal disulfide, nano-mullite, indium phosphide and graphene.

14. The preparation method according to claim 12, characterized in that: The step of depositing the second functional layer material to obtain the second functional layer comprises: providing a substrate; Depositing the second functional layer material on the substrate to obtain a substrate with a solid film deposited thereon; removing the substrate to obtain a solid film; transferring the solid film onto a target film layer to obtain a second functional layer; Wherein, the target film layer includes the light-emitting layer or the first functional layer.

15. The preparation method according to claim 14, characterized in that: The step of transferring the solid film onto the target film layer to obtain the second functional layer comprises: Providing a liquid medium, transferring the solid film into the liquid medium, wherein the solid film floats on the surface of the liquid medium; The target film layer is moved to below the solid film, and the target film layer is controlled to contact with the solid film.

16. A display device, characterized in that: The invention comprises the optoelectronic device according to any one of claims 1 to 8, or the optoelectronic device prepared by the preparation method according to any one of claims 9 to 15.

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