A method for preparing photoresist based on novel polymer material

Abstract

The present invention relates to the technical field of photoresists, and discloses a method for preparing a photoresist based on a novel polymer material, comprising the following steps: S1, preparing polymer materials, polystyrene, and acrylic acid. The method for preparing a photoresist based on a novel polymer material uses a photoresist prepared by using a mixed formula of a polystyrene-polyacrylic acid copolymer and a polymethacrylate modified polymer. The combination of polystyrene and polyacrylic acid can provide better photosensitivity, and this combination can form a smaller photolithographic pattern. In particular, in microelectronics and nanotechnology, due to its good optical transparency and high photosensitivity, a high-resolution effect can be achieved within a shorter exposure time. By using a polystyrene-polyacrylic acid copolymer and a polymethacrylate modified polymer, both have good thermal stability and can maintain their mechanical properties at high temperatures, so that the performance of the photoresist in subsequent processing is not affected.

Description

Technical Field

[0001] The invention relates to the technical field of photoresists, in particular to a method for preparing photoresists based on novel polymer materials. Background Art

[0002] Photoresist is an important material used in microelectronics manufacturing and micro-nano processing. It can change its chemical properties under the influence of light to form a specific pattern. In semiconductor manufacturing, printed circuit boards, MEMS (microelectromechanical systems) and other nanotechnology fields, photoresist is an indispensable and important component. It has photochemical sensitivity and can transfer and cure photolithographic patterns through irradiation or radiation of ultraviolet light, electron beam, ion beam, X-ray, etc. It is a light-sensitive mixed liquid mainly composed of photosensitive resin, active monomers, solvents, additives, initiators, etc.

[0003] With the development of technology, various applications (such as semiconductor manufacturing, micro-electromechanical systems, etc.) have increasing requirements for resolution. However, the resolution of existing photoresists is relatively low and needs to be further improved. In addition, some photoresists will lose their properties at high temperatures or when exposed to heat environments for a long time. New application scenarios often require materials to work stably at higher temperatures. Therefore, a photoresist preparation method based on a new polymer material is proposed to solve the above problems. Summary of the invention

[0004] 1. Technical issues to be resolved

[0005] In view of the shortcomings of the prior art, the present invention provides a method for preparing a photoresist based on a new polymer material, which has the advantages of improved resolution and strong heat resistance, etc., and solves the problem that with the development of technology, the resolution requirements of various applications are constantly increasing, but the resolution of existing photoresists is low and needs to be further improved, and some photoresists will lose their properties when exposed to high temperatures or long-term exposure to hot environments, while new application scenarios often require materials to work stably at higher temperatures.

[0006] (II) Technical solution

[0007] To achieve the above object, the present invention provides the following technical solution: a method for preparing a photoresist based on a novel polymer material, comprising the following steps:

[0008] S1. Prepare polymer materials, polystyrene, acrylic acid, methacrylate, initiator and solvent;

[0009] S2, synthesizing a polystyrene-polyacrylic acid copolymer;

[0010] S3, synthesizing a polymethacrylate modified polymer;

[0011] S4, mixing the synthesized polystyrene-polyacrylic acid copolymer and the polymethacrylate modified polymer with other additives, wherein the other additives include a photosensitizer, a plasticizer, an organic solvent, an antioxidant and a surfactant;

[0012] S5. When making the photoresist, use a mixing device to mix and stir the raw materials to ensure that all components are evenly dispersed, and adjust the proportion of solvents appropriately to meet application requirements according to the required photoresist properties;

[0013] S6, coating the prepared photoresist film on a substrate, and curing the photoresist under appropriate conditions to form a solid film;

[0014] S7. Develop the photoresist to remove the uncrosslinked areas to form the desired pattern. After the development process, perform necessary cleaning and post-processing to ensure the integrity and functionality of the photoresist.

[0015] Preferably, the specific steps for synthesizing the polystyrene-polyacrylic acid copolymer in S2 are as follows:

[0016] S2.1. Dissolve polystyrene and acrylic acid monomers and initiator in a suitable solvent;

[0017] S2.2, stir the above solution evenly and react in an inert gas atmosphere;

[0018] S2.3, heating the reaction system to the desired temperature and maintaining it for an appropriate time to ensure completion of the polymerization reaction;

[0019] S2.4. After the reaction is completed, cool rapidly and add acetic acid to terminate the reaction.

[0020] Preferably, the inert gas in S2.2 is nitrogen or helium, the temperature of S2.3 is 60° C.-80° C., and the time is 3-5 hours.

[0021] Preferably, the specific steps for synthesizing the polymethacrylate modified polymer in S3 are as follows:

[0022] S3.1, dissolving methacrylate and a selected initiator in a suitable solvent;

[0023] S3.2, under an inert atmosphere, heating the reaction system to an appropriate temperature and maintaining it for a certain period of time to achieve polymerization reaction;

[0024] S3.3. Terminate the polymerization reaction by cooling or adding a terminator.

[0025] Preferably, the temperature of S3.2 is 70°C-100°C and the time is 2-3 hours.

[0026] Preferably, the coating method in S6 includes spin coating, spray coating and brush coating.

[0027] Preferably, the mass percentages of various raw materials in S4 are: polystyrene-polyacrylic acid copolymer 25-45wt%, polymethacrylate modified polymer 25-45wt%, photosensitizer 1-5wt%, plasticizer 5-20wt%, organic solvent 10-50wt%, antioxidant 0.5-1wt% and surfactant 0.3-1wt%.

[0028] Preferably, the photosensitizer is a photoinitiator TPO, the plasticizer is one of dioctyl phthalate or dimethyl phthalate, the organic solvent is one of ethanol, acetone, acetonitrile or dichloromethane, the antioxidant is butylated hydroxytoluene, and the surfactant is polysorbate-20.

[0029] Preferably, the mixing device in S5 is an ultrasonic cleaner or a stirrer.

[0030] (III) Beneficial effects

[0031] Compared with the prior art, the present invention provides a method for preparing a photoresist based on a novel polymer material, which has the following beneficial effects:

[0032] 1. The method for preparing a photoresist based on a novel polymer material uses a mixed formula of a polystyrene-polyacrylic acid copolymer and a polymethacrylate modified polymer to prepare the photoresist. The combination of polystyrene and polyacrylic acid can provide better photosensitivity. This combination can form smaller photolithography patterns. Especially in microelectronics and nanotechnology, due to its good optical transparency and high photosensitivity, it can achieve high resolution in a shorter exposure time. The molecular structure of the polymer is usually more regular, which helps to form a uniform reaction area under ultraviolet light, thereby reducing the blur and distortion of the pattern. The addition of the modified polymer can further improve the fineness of the pattern.

[0033] 2. The method for preparing photoresist based on new polymer materials uses polystyrene-polyacrylic acid copolymer and polymethacrylate modified polymer, both of which have good thermal stability and can maintain their mechanical properties at high temperatures, so that the performance of the photoresist in subsequent processing is not affected, which is very important for applications that require high-temperature curing or post-processing. The addition of plasticizers enables the photoresist to maintain a certain flexibility at high temperatures, reducing the risk of thermal deformation, thereby improving the stability and accuracy of the graphics. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a schematic diagram of the method flow of the present invention. DETAILED DESCRIPTION

[0035] The following will be combined with the embodiments of the present invention and the accompanying drawings to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0036] See also Figure 1 , a method for preparing a photoresist based on a novel polymer material, comprising the following steps:

[0037] S1. Prepare polymer materials, polystyrene, acrylic acid, methacrylate, initiator and solvent;

[0038] S2, synthesizing a polystyrene-polyacrylic acid copolymer;

[0039] S3, synthesizing a polymethacrylate modified polymer;

[0040] S4, mixing the synthesized polystyrene-polyacrylic acid copolymer and the polymethacrylate modified polymer with other additives, wherein the other additives include a photosensitizer, a plasticizer, an organic solvent, an antioxidant and a surfactant;

[0041] S5. When making the photoresist, use an ultrasonic cleaner or agitator to mix and stir the raw materials to ensure that all components are evenly dispersed, and adjust the proportion of solvents appropriately to meet application requirements according to the required photoresist properties;

[0042] S6, coating the prepared photoresist film on a substrate, curing the photoresist under appropriate conditions to form a solid film, the coating method including spin coating, spray coating and brush coating;

[0043] S7. Develop the photoresist to remove the uncrosslinked areas to form the desired pattern. After the development process, perform necessary cleaning and post-processing to ensure the integrity and functionality of the photoresist.

[0044] Specifically, the specific steps for synthesizing the polystyrene-polyacrylic acid copolymer in S2 are as follows:

[0045] S2.1. Dissolve polystyrene and acrylic acid monomers and initiator in a suitable solvent;

[0046] S2.2, stir the above solution evenly and react in an inert gas atmosphere;

[0047] S2.3, heating the reaction system to the desired temperature and maintaining it for an appropriate time to ensure completion of the polymerization reaction;

[0048] S2.4. After the reaction is completed, cool rapidly and add acetic acid to terminate the reaction.

[0049] Furthermore, the inert gas in S2.2 is one of nitrogen or helium, the temperature of S2.3 is 60° C.-80° C., and the time is 3-5 hours.

[0050] Furthermore, the transparent properties of polystyrene-polyacrylic acid and polymethacrylate help ensure the penetration of lasers or light sources, reduce energy loss, and avoid blurred patterns. They also have good optical properties and can effectively absorb light sources, such as ultraviolet light. This property enables them to form clear reaction areas after exposure, thereby improving the resolution of the photoresist. At the same time, the special structure of polystyrene-polyacrylic acid can form nanoscale phase separation, which helps to form clearer edges after exposure, thereby improving the resolution.

[0051] Furthermore, both polystyrene-polyacrylic acid and polymethacrylate have high glass transition temperatures. Under high temperature conditions, the structure and properties of the photoresist will not change easily and can maintain its shape and strength. During the preparation process, a three-dimensional network structure is formed through appropriate cross-linking reactions, which further improves heat resistance and mechanical strength. In addition, the synergistic effect of polystyrene-polyacrylic acid and polymethacrylate helps to reduce stress within the film and prevent film rupture or deformation due to stress concentration at high temperatures.

[0052] Specifically, the specific steps for synthesizing the polymethacrylate modified polymer in S3 are as follows:

[0053] S3.1, dissolving methacrylate and a selected initiator in a suitable solvent;

[0054] S3.2, under an inert atmosphere, heating the reaction system to an appropriate temperature and maintaining it for a certain period of time to achieve polymerization reaction;

[0055] S3.3. Terminate the polymerization reaction by cooling or adding a terminator.

[0056] Furthermore, the temperature of S3.2 is 70°C-100°C and the time is 2-3 hours.

[0057] Specifically, the mass percentages of various raw materials in S4 are: polystyrene-polyacrylic acid copolymer 25-45wt%, polymethacrylate modified polymer 25-45wt%, photosensitizer 1-5wt%, plasticizer 5-20wt%, organic solvent 10-50wt%, antioxidant 0.5-1wt% and surfactant 0.3-1wt%.

[0058] Furthermore, the photosensitizer is a photoinitiator TPO, which is used to absorb light sources and initiate chemical reactions; the plasticizer is one of dioctyl phthalate or dimethyl phthalate, which can further adjust the physical properties of the photoresist, improve fluidity, and reduce stress in the coating, further enhancing the integrity of the film; the organic solvent is one of ethanol, acetone, acetonitrile or dichloromethane, which is used to adjust the viscosity of the photoresist and provide suitable coating conditions; the antioxidant is butylated hydroxytoluene, which can help prevent polymer degradation during the synthesis process and storage, and improve the stability of the photoresist; the surfactant is polysorbate-20, which is used to improve the wettability and fluidity of the photoresist.

[0059] Example 1

[0060] The mass percentages of various raw materials in S4 are: 35g of polystyrene-polyacrylic acid copolymer, 35g of polymethacrylate modified polymer, 3g of photosensitizer, 15g of plasticizer, 10g of organic solvent, 0.5g of antioxidant and 0.5g of surfactant, including the following steps: mixing the polymer, photosensitizer, plasticizer and additive smoothly to ensure uniform dispersion; gradually adding the polymer and other ingredients to the selected solvent, using a stirring device or ultrasonic treatment to ensure uniformity, removing any insoluble particles through a filter to ensure the quality of the photoresist.

[0061] Example 2

[0062] The mass percentages of various raw materials in S4 are: 45g of polystyrene-polyacrylic acid copolymer, 25g of polymethacrylate modified polymer, 5g of photosensitizer, 12g of plasticizer, 8g of organic solvent, 0.8g of antioxidant and 0.6g of surfactant, including the following steps: mixing the polymer, photosensitizer, plasticizer and additive smoothly to ensure uniform dispersion; gradually adding the polymer and other ingredients to the selected solvent, using a stirring device or ultrasonic treatment to ensure uniformity, removing any insoluble particles through a filter to ensure the quality of the photoresist.

[0063] Example 3

[0064] The mass percentages of various raw materials in S4 are: 25g of polystyrene-polyacrylic acid copolymer, 45g of polymethacrylate modified polymer, 4g of photosensitizer, 18g of plasticizer, 12g of organic solvent, 1g of antioxidant and 1g of surfactant, including the following steps: mixing the polymer, photosensitizer, plasticizer and additive smoothly to ensure uniform dispersion; gradually adding the polymer and other ingredients to the selected solvent, using a stirring device or ultrasonic treatment to ensure uniformity, removing any insoluble particles through a filter to ensure the quality of the photoresist.

[0065] In summary, the photoresist preparation method based on the new polymer material uses a mixed formula of polystyrene-polyacrylic acid copolymer and polymethacrylate modified polymer to prepare the photoresist. The combination of polystyrene and polyacrylic acid can provide better photosensitivity. This combination can form smaller photolithography patterns. Especially in microelectronics and nanotechnology, due to its good optical transparency and high photosensitivity, it can achieve high resolution in a shorter exposure time. The molecular structure of the polymer is usually more regular, which helps to form a uniform reaction area under ultraviolet light, thereby reducing the blur and distortion of the pattern. The addition of modified polymers can further improve the fineness of the pattern.

[0066] Moreover, by using polystyrene-polyacrylic acid copolymer and polymethacrylate modified polymer, both have good thermal stability and can maintain their mechanical properties at high temperatures, so that the performance of the photoresist in subsequent processing is not affected, which is very important for applications that require high-temperature curing or post-processing. The addition of plasticizers enables the photoresist to still maintain a certain flexibility at high temperatures, reducing the risk of thermal deformation, thereby improving the stability and accuracy of the graphics, and solving the problem that with the development of technology, the resolution requirements of various applications are constantly increasing, but the resolution of existing photoresists is low and needs to be further improved. In addition, some photoresists will lose their properties at high temperatures or long-term exposure to hot environments, and new application scenarios often require materials to work stably at higher temperatures.

[0067] The relevant modules involved in this system are all hardware system modules or functional modules that combine computer software programs or protocols with hardware in the prior art. The computer software programs or protocols involved in the functional modules are themselves technologies that are well known to those skilled in the art and are not improvements of this system. The improvements of this system are the interaction or connection relationships between the modules, that is, improvements to the overall structure of the system to solve the corresponding technical problems to be solved by this system.

[0068] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for preparing a photoresist based on a novel polymer material, characterized in that: The following steps are involved: S1. Prepare polymer materials, polystyrene, acrylic acid, methacrylate, initiator and solvent; S2, synthesizing a polystyrene-polyacrylic acid copolymer; S3, synthesizing a polymethacrylate modified polymer; S4, mixing the synthesized polystyrene-polyacrylic acid copolymer and the polymethacrylate modified polymer with other additives, wherein the other additives include a photosensitizer, a plasticizer, an organic solvent, an antioxidant and a surfactant; S5. When making the photoresist, use a mixing device to mix and stir the raw materials to ensure that all components are evenly dispersed, and adjust the proportion of solvents appropriately to meet application requirements according to the required photoresist properties; S6, coating the prepared photoresist film on a substrate, and curing the photoresist under appropriate conditions to form a solid film; S7. Develop the photoresist to remove the uncrosslinked areas to form the desired pattern. After the development process, perform necessary cleaning and post-processing to ensure the integrity and functionality of the photoresist.

2. A method for preparing a photoresist based on a novel polymer material according to claim 1, characterized in that: The specific steps for synthesizing the polystyrene-polyacrylic acid copolymer in S2 are as follows: S2.

1. Dissolve polystyrene and acrylic acid monomers and initiator in a suitable solvent; S2.2, stir the above solution evenly and react in an inert gas atmosphere; S2.3, heating the reaction system to the desired temperature and maintaining it for an appropriate time to ensure completion of the polymerization reaction; S2.

4. After the reaction is completed, cool rapidly and add acetic acid to terminate the reaction.

3. A method for preparing a photoresist based on a novel polymer material according to claim 2, characterized in that: The inert gas in S2.2 is nitrogen or helium, the temperature of S2.3 is 60° C.-80° C., and the time is 3-5 hours.

4. The method for preparing a photoresist based on a novel polymer material according to claim 1, characterized in that: The specific steps for synthesizing the polymethacrylate modified polymer in S3 are as follows: S3.1, dissolving methacrylate and a selected initiator in a suitable solvent; S3.2, under an inert atmosphere, heating the reaction system to an appropriate temperature and maintaining it for a certain period of time to achieve polymerization reaction; S3.

3. Terminate the polymerization reaction by cooling or adding a terminator.

5. A method for preparing a photoresist based on a novel polymer material according to claim 4, characterized in that: The temperature of S3.2 is 70°C-100°C and the time is 2-3 hours.

6. The method for preparing a photoresist based on a novel polymer material according to claim 1, characterized in that: The coating method in S6 includes spin coating, spray coating and brush coating.

7. The method for preparing a photoresist based on a novel polymer material according to claim 1, characterized in that: The mass percentages of various raw materials in S4 are: polystyrene-polyacrylic acid copolymer 25-45wt%, polymethacrylate modified polymer 25-45wt%, photosensitizer 1-5wt%, plasticizer 5-20wt%, organic solvent 10-50wt%, antioxidant 0.5-1wt% and surfactant 0.3-1wt%.

8. The method for preparing a photoresist based on a novel polymer material according to claim 1, characterized in that: The photosensitizer is a photoinitiator TPO, the plasticizer is one of dioctyl phthalate or dimethyl phthalate, the organic solvent is one of ethanol, acetone, acetonitrile or dichloromethane, the antioxidant is butylated hydroxytoluene, and the surfactant is polysorbate-20.

9. The method for preparing a photoresist based on a novel polymer material according to claim 1, characterized in that: The mixing device in S5 is an ultrasonic cleaning machine or a stirrer.

Images