Switching structure, antenna and terminal

Abstract

The embodiment of the invention provides a switching structure, an antenna and a terminal, the switching structure comprises a circuit board, the circuit board comprises a first metal layer, a second metal layer and a dielectric layer, the dielectric layer is located between the first metal layer and the second metal layer, the first metal layer comprises a radiation part and a microstrip line, the microstrip line is connected with one end of the radiation part, and the second metal layer is grounded; wherein the radiation part is provided with an opening, so that the radiation part forms at least two resonant frequencies. According to the scheme provided by the embodiment of the invention, the working bandwidth of the switching structure can be expanded.

Description

[0001] This application is a divisional application. The application number of the original application is 202180045951.9, and the original application date is December 28, 2021. The entire contents of the original application are incorporated into this application by reference. Technical Field

[0002] The present application relates to the field of communication technology, and more specifically, to a switching structure, an antenna and a terminal. Background Art

[0003] With the development and progress of science and technology, the intelligence of vehicles has gradually become a research hotspot in the field of vehicles. Intelligent vehicles (smart vehicles for short) can bring people a safer and more comfortable driving experience. For example, a variety of sensors can be installed on smart vehicles to obtain environmental information around them through sensors, and realize assisted driving or automatic driving based on the surrounding environmental information. Sensors include, for example, cameras, lidars, millimeter-wave radars, ultrasonic sensors, etc.

[0004] Millimeter wave radar uses millimeter waves as the detection medium and can measure the distance, angle, and moving speed between the millimeter wave radar and the object being measured. The millimeter wave radar can send signals to the antenna radiator through the feed source, and the antenna radiator can radiate the signal to the waveguide. By transferring the signal through the waveguide, the millimeter wave radar can detect the position and moving speed of the object being measured relatively accurately. The effective bandwidth of the millimeter wave radar has a great influence on the performance of the millimeter wave. How to improve the effective bandwidth of the millimeter wave radar is a problem that needs to be solved. Summary of the invention

[0005] An embodiment of the present application provides a switching structure, the purpose of which is to expand the working bandwidth range of the switching structure.

[0006] In a first aspect, a transfer structure is provided, including a circuit board, the circuit board including a first metal layer, a second metal layer and a dielectric layer, the dielectric layer is located between the first metal layer and the second metal layer, the first metal layer includes a radiating portion and a microstrip line, the microstrip line is connected to one end of the radiating portion, and the second metal layer is grounded; wherein the radiating portion has an opening so that the radiating portion forms at least two resonant frequencies.

[0007] The present application provides a transfer structure, which includes a circuit board, and a dielectric layer on the circuit board is located between a first metal layer and a second metal layer. The transfer structure provided by the present application is conducive to reducing the space corresponding to the metal back cavity and reducing the overall thickness of the circuit board, thereby facilitating the integration of the transfer structure with other components. The opening of the radiation portion of the first metal layer expands the bandwidth of the transfer structure, so that the transfer structure can be applied to more scenarios.

[0008] In combination with the first aspect, in certain implementations of the first aspect, the transfer structure also includes a waveguide, which is located on a side of the circuit board close to the first metal layer, and the waveguide includes a microstrip line avoidance groove and a waveguide mouth, the microstrip line is arranged opposite to the microstrip line avoidance groove and spaced apart from the groove wall of the microstrip line avoidance groove, the waveguide mouth is arranged opposite to the radiation part, and the signal emitted by the radiation part passes through the waveguide mouth and emits out of the transfer structure.

[0009] The adapter structure of the present application also improves the waveguide, and there are a waveguide mouth and a microstrip line avoidance groove on the waveguide. The existence of the microstrip line avoidance groove can reduce the possibility of electromagnetic wave energy leakage when the waveguide is used in conjunction with the circuit board, or help reduce the leakage of electromagnetic wave energy caused by the contact between the microstrip line and the waveguide, so that the electromagnetic wave can enter the radiation part from the microstrip line on the circuit board, and then radiate out of the entire adapter structure through the waveguide mouth.

[0010] In combination with the first aspect, in some implementations of the first aspect, the radiating portion is rectangular, and the microstrip line is disposed away from the symmetry axis of the radiating portion.

[0011] The symmetry axes of the radiating part and the microstrip line on the circuit board are offset, which helps to reduce the energy reflection caused by the transition of electromagnetic waves from the microstrip line to the radiating part, that is, enhance the impedance matching of the transition of electromagnetic waves from the microstrip line to the radiating part, and improve the matching bandwidth of the transition structure.

[0012] In combination with the first aspect, in some implementations of the first aspect, the opening is a strip-shaped opening, and the opening is spaced apart from an edge of the radiation portion.

[0013] The opening of the radiation part is inside the radiation part, and the strip-shaped opening inside the radiation part enables the current to form multiple resonant frequencies near the strip-shaped opening, thereby expanding the working bandwidth range of the switching structure.

[0014] In combination with the first aspect, in some implementations of the first aspect, the opening is a strip-shaped opening, and one end of the opening is connected to an edge of the radiation portion away from the edge connected to the microstrip line.

[0015] The opening of the radiation part is connected to the edge of the radiation part away from the radiation part and the microstrip line. Through a plurality of openings connected to the edge, the diffraction path of the current is increased, thereby increasing the working bandwidth of the switching structure.

[0016] In combination with the first aspect, in some implementations of the first aspect, the opening includes a first strip-shaped opening segment and a second strip-shaped opening segment, and one end of the second strip-shaped opening segment is connected to one end of the first strip-shaped opening segment.

[0017] In an embodiment of the present application, the ends of the two strip-shaped opening segments are connected, thereby forming a certain angle. When the electromagnetic wave passes through the radiation portion, it can bypass the structure formed by the two strip-shaped opening segments and be emitted near the structure formed by the two strip-shaped opening segments, thereby increasing the radiation position of the electromagnetic wave energy and improving the working bandwidth of the switching structure.

[0018] In combination with the first aspect, in certain implementations of the first aspect, the opening also includes a third strip opening segment, the third strip opening segment is connected to the other end of the second strip opening segment, the other end of the second strip opening segment is away from the end connected to the first strip opening segment, and the third strip opening segment is parallel to the first strip opening segment and is spaced apart.

[0019] The structure formed by the three-section opening of the radiation part further increases the current resonance point and expands the working bandwidth range of the switching structure.

[0020] In combination with the first aspect, in some implementations of the first aspect, the second strip-shaped opening segment is disposed perpendicularly relative to the first strip-shaped opening segment.

[0021] The opening of the radiation part is substantially a U-shaped opening, so that the radiation part forms a multi-tuned circuit, reduces the quality factor, and increases its bandwidth range.

[0022] In combination with the first aspect, in some implementations of the first aspect, the length of the opening is 0.5*λ to 1.5*λ, for example, the length of the opening may be 0.5*λ, or may be λ, or may be 1.5*λ. The width of the opening is 0.01*λ to 0.2*λ, for example, the width of the opening may be 0.05*λ, or may be 0.1*λ. λ is the operating wavelength of the switching structure.

[0023] The opening is in a strip shape, with a total length of about 0.5*λ to 1.5*λ and a width of about 0.01*λ to 0.2*λ. The specific shape may not be limited, so that openings of different shapes in the radiation part can increase the current diffraction path and increase the working bandwidth of the switching structure.

[0024] In combination with the first aspect, in certain implementations of the first aspect, the opening includes a fourth strip opening segment and a fifth strip opening segment, the fourth strip opening segment extends along the first direction to the first edge of the radiation portion, the fifth strip opening segment extends along the second direction to the first edge, and the fourth strip opening segment intersects with the fifth strip opening segment at the first edge.

[0025] The opening shape on the radiation part is V-shaped, which increases the diffraction path of the current and expands the working bandwidth of the switching structure.

[0026] In combination with the first aspect, in some implementations of the first aspect, the first edge is adjacent to an edge of the radiation portion connected to the microstrip line.

[0027] The apex of the V-shaped opening of the radiating portion is on the adjacent side of the edge where the radiating portion is connected to the microstrip line, thereby increasing the actual length of the adjacent side and extending the edge of the adjacent side toward the inside of the radiating portion, redistributing the energy of electromagnetic wave radiation and increasing the working bandwidth range of the switching structure.

[0028] In combination with the first aspect, in some implementations of the first aspect, the waveguide further includes a shielding groove, which is disposed on a side of the waveguide close to the waveguide opening and is spaced apart from the waveguide opening and the microstrip line avoidance groove.

[0029] The shielding groove around the waveguide port can reduce the leakage of electromagnetic wave energy to the outside, so that most of the energy can be radiated out of the switching structure through the waveguide port.

[0030] In combination with the first aspect, in some implementations of the first aspect, the shielding groove surrounds the outer circumference of the waveguide opening.

[0031] The shielding groove surrounds the outer circumference of the waveguide opening, so that a relatively large area of ​​the waveguide opening can be surrounded by the shielding groove, which is beneficial to limiting energy loss and improving energy utilization during the switching process.

[0032] In combination with the first aspect, in some implementations of the first aspect, the depth of the shielding groove is an odd multiple of λ / 4, where λ is an operating wavelength of the switching structure.

[0033] The shape of the shielding groove on the waveguide can be unlimited, for example, it can be a rectangular strip. The rectangular strip-shaped shielding groove is conducive to reducing the energy leaked from one side of the strip. For another example, the shielding groove can also surround the waveguide opening to better reduce the energy leakage of electromagnetic waves. The depth of the shielding groove is set to an odd multiple of λ / 4, so that after impedance transformation, the shielding groove has a relatively large impedance.

[0034] In combination with the first aspect, in some implementations of the first aspect, the waveguide further includes a waveguide body and a boss, wherein the boss protrudes from the waveguide body toward the circuit board and contacts the circuit board. Exemplarily, the waveguide body and the boss may be integrally formed.

[0035] The waveguide is brought into contact with the circuit board through the provided bosses, thereby reducing the contact area, thereby reducing the influence of the dimensional tolerance of the waveguide or circuit board processing on the assembly.

[0036] In combination with the first aspect, in certain implementations of the first aspect, the first metal layer also includes a first transition portion for impedance matching between the microstrip line and the radiation portion, and the first transition portion is connected between the radiation portion and the microstrip line, along the direction from the radiation portion to the microstrip line.

[0037] Providing a transition section between the radiating portion and the microstrip line can make the impedance on the transmission path present a gradual change state, thereby reducing energy loss such as reflection during electromagnetic wave transmission.

[0038] In combination with the first aspect, in certain implementations of the first aspect, the first metal layer also includes a grounding portion, which surrounds the outer periphery of the radiating portion and the microstrip line and is spaced apart from the radiating portion and the microstrip line, the grounding portion is in contact with the waveguide, and the grounding portion is conductively connected to the second metal layer.

[0039] The outside of the radiation part surrounds the grounding part, so that when the waveguide is used in conjunction with the circuit board, the waveguide and the grounding part achieve good contact.

[0040] In combination with the first aspect, in certain implementations of the first aspect, the grounding portion is connected to the second metal layer through a metallized through hole or a metal wall.

[0041] The metallized through hole between the grounding portion and the second metal layer ensures good contact between the grounding portion and the second metal layer. In addition, the metal wall or the metallized through hole can further limit the outward radiation of electromagnetic wave energy, thereby improving the efficiency of the switching structure.

[0042] In combination with the first aspect, in certain implementations of the first aspect, an orthographic projection of the waveguide opening on the circuit board is located within an area enclosed by an inner contour of the ground portion.

[0043] The area enclosed by the inner contour of the grounding portion is the transition area between the circuit board and the waveguide. The transition area can be slightly larger than the size of the waveguide port, thereby reducing the influence of the alignment error on the transition performance and achieving good transition performance.

[0044] In combination with the first aspect, in certain implementations of the first aspect, the grounding portion includes a grounding portion body and a grounding extension portion, the grounding extension portion is opposite to and spaced apart from a connection between the microstrip line and the radiation portion, and the grounding extension portion extends from the grounding portion body toward the connection.

[0045] The grounding portion has a grounding extension portion, which extends toward the connection between the radiation portion and the microstrip line. The provision of the grounding extension portion can increase the impedance matching degree of electromagnetic wave transmission.

[0046] In a second aspect, an antenna is provided, comprising a switching structure as in any one of the implementations of the first aspect.

[0047] In a third aspect, a detection device is provided, the detection device comprising an antenna according to any one of the implementations of the second aspect. Exemplarily, the detection device is a radar.

[0048] In a fourth aspect, a terminal is provided, comprising a detection device according to any one implementation of the third aspect.

[0049] In combination with the fourth aspect, in some implementations of the fourth aspect, the terminal is a vehicle.

[0050] In a fifth aspect, a vehicle is provided, comprising a detection device according to any one of the implementations of the third aspect. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 This is a scene diagram applicable to the switching structure provided in the embodiment of the present application.

[0052] Figure 2 It is a three-dimensional diagram of a switching structure provided in an embodiment of the present application.

[0053] Figure 3 is corresponding to Figure 2 Schematic diagram of the structure of the first metal layer of a circuit board.

[0054] Figure 4 is corresponding to Figure 3 Schematic structural diagram of the first transition part.

[0055] Figure 5 It is a three-dimensional diagram of another adapter structure provided in an embodiment of the present application.

[0056] Figure 6 is corresponding to Figure 5 Schematic structural diagram of the first end face of the waveguide.

[0057] Figure 7 is corresponding to Figure 5 Projection diagram.

[0058] Figure 8 It is a structural schematic diagram of a radiation portion opening provided in an embodiment of the present application.

[0059] Fig. 9 is corresponding to Figure 8 Figure 2. Simulation results of the radiation opening of the radiator.

[0060] Fig.10 It is a schematic diagram of the structure of the radiation portion opening provided in an embodiment of the present application.

[0061] Fig.11 It is a structural schematic diagram of a radiation portion opening provided in an embodiment of the present application.

[0062] Fig.12 It is a schematic structural diagram of the radiation portion opening provided in an embodiment of the present application.

[0063] Fig.13 It is a schematic structural diagram of a switching structure array provided in an embodiment of the present application.

[0064] Fig.14 It is a schematic diagram of another switching structure provided in an embodiment of the present application. DETAILED DESCRIPTION

[0065] The following will describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work should fall within the scope of protection of this application.

[0066] The technical solution disclosed in this application takes the application in the radar field as an example, but is not limited to the radar system. The switching structure can be applied to any scenario requiring waveguide and circuit board switching.

[0067] The circuit board used in the present application may be a common printed circuit board (PCB) or a substrate integrated waveguide (SIW).

[0068] The waveguide applicable to the present application may be a rectangular waveguide or a tubular waveguide with other non-standard or standard waveguide openings. The following takes a metal waveguide with a rectangular waveguide opening as an example to introduce the main technical solution of the present application. When the waveguide opening is in other shapes, the situation is similar.

[0069] Figure 1 The schematic diagram of the radar structure in the form of a waveguide antenna to which the switching structure of the present application is applicable is shown. Figure 1 As shown, the radar includes:

[0070] The shielding layer 110 is used to reduce the impact of external electromagnetic fields on the entire antenna. The shielding layer can be grounded so that external interference signals are guided to the ground by the layer. The shielding layer can also prevent the circuit inside the antenna from radiating electromagnetic energy to the outside, thereby reducing the loss of internal signal transmission. The shielding layer can also have excellent thermal conductivity, thereby conducting the heat generated by the internal circuit out of the entire device, so that the internal circuit operates at a relatively stable temperature.

[0071] PCB layer 120, active devices are located in this layer, and the signals generated by the active devices can be processed. The processed signals can enter the next layer structure from this layer through radiation or transmission lines.

[0072] The cooling layer 130 is located between the PCB layer 120 and the filter / feed layer 140 . Like the shielding layer, it can quickly conduct the heat generated in the antenna out of the entire antenna system. The specific design of the shape of this layer can also facilitate the transition between the PCB layer 120 and the filter / feed layer 140 .

[0073] The filter / feed layer 140 is used to filter the signal from the PCB layer 120 to obtain electromagnetic waves within a certain bandwidth.

[0074] The radiation layer 150 includes a slot radiation array composed of a plurality of slots, and is used to radiate the electromagnetic waves processed by the filter / feed layer 140 out of the entire millimeter wave antenna device through the array.

[0075] exist Figure 1 In the radar shown, the transition associated with the PCB layer 120 has an important impact on the performance of the entire device. Therefore, the technical solution provided by the present application covers a wider bandwidth range by optimizing the transition between the PCB layer 120 and the waveguide, while having the advantage of a low profile, which facilitates the installation of the entire module.

[0076] Figure 2 FIG. 2 shows a stereogram of a switching structure provided by an embodiment of the present application. Figure 2 As shown, the transfer structure provided in the embodiment of the present application may include a circuit board 20 .

[0077] Figure 2 The circuit board 20 in the embodiment can be equivalent to Figure 1 The PCB layer 120 in the circuit board 20 includes a first metal layer 230, a second metal layer 210 and a dielectric layer 220. The dielectric layer 220 is located between the first metal layer 230 and the second metal layer 210. The dielectric layer 220 can be an insulating material, and the second metal layer 210 is grounded.

[0078] In one embodiment, the first metal layer 230 and the second metal layer 210 may be two adjacent metal layers of the circuit board 20. The first metal layer 230 and the second metal layer 210 may be disposed on two surfaces of the dielectric layer 220 by electroplating or the like.

[0079] In the embodiment of the present application, in order to reduce the processing difficulty and production cost, the circuit board 20 adopts a cavity-free structure, and the dielectric layer 220 is directly under the first metal layer 230, and there is no other metal back cavity, which can effectively reduce the processing difficulty, and the thickness of the entire circuit board 20 is relatively small, effectively saving costs.

[0080] For example, the thickness of the NF30 plate of the vehicle-mounted radar board is only 0.05-0.2 mm, and illustratively, it can be 0.12 mm.

[0081] Figure 3 The structure of the first metal layer 230 of the transfer structure circuit board 20 of the present application is shown. Figure 3 As shown, the first metal layer 230 includes a radiation portion 231 and a microstrip line 232, one end of the microstrip line 232 is connected to a feed source portion, and the feed source portion can be a feed source in the entire switching structure or a circuit board or an electronic device. The other end of the microstrip line 232 can be connected to the radiation portion 231.

[0082] In some embodiments, the radiation portion 231 and the microstrip line 232 may be directly connected. In other embodiments, the radiation portion 231 and the microstrip line 232 may be connected via a first transition portion 233, which is also metal. The existence of the first transition portion 233 may make the impedance from the microstrip line 232 to the radiation portion 231 present a gradual change when the electromagnetic wave enters the radiation portion 231 from the microstrip line 232, thereby reducing the reflection of the electromagnetic wave energy at the connection between the microstrip line 232 and the radiation portion 231, which is beneficial to increase the energy entering the radiation portion 231 and reduce the loss.

[0083] The width of the first transition portion 233 at a position close to the microstrip line 232 may be smaller than the width of the first transition portion 233 at a position close to the radiation portion 231. The width direction of the first transition portion 233 may be perpendicular to the direction from the microstrip line 232 to the radiation portion 231 and parallel to the direction of the first metal layer 230. For example, the width direction of the first transition portion 233 may be perpendicular to the extension direction of the microstrip line 232.

[0084] Figure 4 The structure of the first transition portion provided in the embodiment of the present application is shown. Figure 4 As shown in (a), the width of the first transition portion 233 may gradually increase, for example, linearly increase, from the microstrip line 232 to the radiation portion 231 .

[0085] like Figure 4 As shown in (b), the first transition portion 233 may increase in width in a step-like manner from the microstrip line 232 to the radiation portion 231. That is, the edge of the first transition portion 233 may be stepped. The edge of the first transition portion 233 may include a first step edge 2331 and a second step edge 2332 parallel to the width direction of the first transition portion 233, and a third step edge 2333 and a fourth step edge 2334 perpendicular to the width direction of the first transition portion 233. The third step edge 2333 may be connected between the first step edge 2331 and the second step edge 2332, and the fourth step edge 2334 may be connected between the second step edge 2332 and the microstrip line 232. The width of the first transition portion 233 at the first step edge is different from the width of the first transition portion 233 at the second step edge.

[0086] The radiation portion 231 may be rectangular. In some embodiments, the symmetry axis of the microstrip line 232 in the extension direction may be offset from the symmetry axis of the radiation portion 231 .

[0087] From the port of microstrip line 232, the impedance state presented is the impedance value transmitted from the back-end circuit. Generally, due to power capacity and various factors, its impedance is generally set to 50 ohms. From the transfer port, i.e., the radiation part 231, the impedance presented is the impedance of the entire transfer structure. By setting the microstrip line offset relative to the radiation part, the difference between the two can be reduced.

[0088] In addition, for the radiation portion 231 , the impedance value presented in the middle portion is usually small, which is not conducive to impedance matching, and the impedance at the edge is large. By selecting a suitable offset size, the difficulty of impedance matching debugging can be greatly reduced, thereby facilitating impedance matching between the microstrip line 232 and the radiation portion 231 .

[0089] In some other embodiments, the symmetry axis in the extension direction of the microstrip line 232 may be in the extension direction of the symmetry axis of the radiation portion 231 .

[0090] The radiation portion 231 has an opening 234 , so that the radiation portion forms at least two resonance frequencies.

[0091] The opening 234 is a pattern formed by removing part of the metal of the radiation portion 231 so as to expose the dielectric layer (220) under the radiation portion 231. In some embodiments, the opening on the radiation portion 231 may also be referred to as a gap. The existence of the opening 234 on the radiation portion 231 changes the capacitance and inductance components, and can cause the current to form a new resonant frequency near the opening, thereby forming at least two resonant frequencies on the radiation portion 231, thereby expanding the working bandwidth of the switching structure.

[0092] The opening 234 may be inside the radiation portion 231 , that is, spaced apart from the edge of the radiation portion 231 , or may be connected to the edge of the radiation portion 231 .

[0093] The radiation part 231 and the microstrip line 232 of the first metal layer 230 may also include a grounding part 235 outside, and the grounding part 235 surrounds the radiation part 231 and the microstrip line 232. The metal between the radiation part 231, the microstrip line 232 and the grounding part 235 is removed by chemical etching or the like, so that the radiation part 231, the microstrip line 232 and the grounding part 235 are separated or spaced apart. Alternatively, the middle part can be removed from the complete metal layer on the dielectric layer 220, and the radiation part 231 and the microstrip line 232 are fixed as a whole in the middle part, and the area in the middle part where the radiation part 231 and the microstrip line 232 are not provided can expose part of the surface of the dielectric layer 220 (at Figure 3 The shaded portion in the figure indicates the exposed dielectric layer).

[0094] The grounding portion 235 can be grounded through a transmission line, or can be connected to the second metal layer 210 through a plurality of metallized through holes 237 disposed on the grounding portion 235 near the radiation portion 231 and the microstrip line 232, thereby being grounded. The distance between the plurality of metallized through holes can be less than the target threshold, thereby limiting the energy of the electromagnetic wave to the area surrounded by the metallized through holes 237, thereby reducing the loss of electromagnetic wave energy.

[0095] In some embodiments, the plurality of metallized through holes 237 may also be replaced by metal walls connecting the ground portion 235 and the second metal layer 210 .

[0096] The grounding portion 235 may include a grounding portion body and a grounding extension portion 236. The grounding extension portion 236 is located near the position where the microstrip line 232 is connected to the radiation portion 231. The distance between the grounding extension portion 236 and the microstrip line 232 is less than the distance between the grounding portion body and the microstrip line 232. The distance between the grounding portion 235 and the microstrip line 232 may be the length from a certain point in the inner contour of the grounding portion to the microstrip line 232 in a direction perpendicular to the extension direction of the microstrip line 232.

[0097] In some embodiments, Figure 3 As shown, the ground extension portion 236 extends from the ground portion body toward the microstrip line 232 .

[0098] In some other embodiments, the ground extension portion is disposed opposite to the connection between the radiation portion 231 and the microstrip line 232 , and may extend toward the connection between the radiation portion 231 and the microstrip line 232 .

[0099] The provision of the ground extension portion 236 can further improve the impedance matching between the radiating portion 231 and the microstrip line 232 , and the entire ground portion 235 and the ground extension portion 236 are not in contact with the microstrip line 232 and the radiating portion 231 .

[0100] Figure 5 3D is a perspective view of another transition structure provided in an embodiment of the present application. The transition structure provided in an embodiment of the present application may further include a waveguide 30. The waveguide 30 is processed from a whole piece of metal, and various structures of the waveguide 30 of the present application may be processed on the first end face of the waveguide 30 by milling or other processing methods.

[0101] The waveguide 30 may include a waveguide opening 311 and a microstrip line avoidance groove 312. The waveguide opening 311 may be a standard waveguide opening, such as a WR12 waveguide opening (the size of the WR12 standard waveguide opening is 3.0988 mm*1.5494 mm); or a non-standard waveguide opening. The waveguide opening 311 passes through from the first end face of the waveguide 30 to the opposite side of the first end face, thereby guiding the electromagnetic wave out of the waveguide 30. The first end face of the waveguide 30 may be the end face of the waveguide 30 close to the circuit board 20. Figure 4As shown, the first metal layer 230 of the circuit board 20 may be located on a side of the circuit board 20 close to the waveguide 30 .

[0102] When the circuit board 20 and the waveguide 30 are used together, the waveguide opening 311 on the first end face of the waveguide 30 faces the first metal layer 230 of the circuit board 20 , so that the energy of the electromagnetic wave radiates outward from the first metal layer 230 of the circuit board 20 through the waveguide opening 311 .

[0103] Figure 6 Shows the corresponding Figure 5 Schematic diagram of the structure of the first end surface of the waveguide 30. Figure 6 As shown, various structures are processed on the first end face of the waveguide 30. The first end face has a waveguide opening 311 and a microstrip line avoidance groove 312, the waveguide opening 311 and the microstrip line avoidance groove 312 are connected or connected, and the depth of the microstrip line avoidance groove 312 can be about 0.6 mm, or other values, which is not limited in this application.

[0104] The waveguide opening 311 and the microstrip line avoidance groove 312 can be connected directly or through a second transition portion 313. The second transition portion 313 can be a strip-shaped groove with a width smaller than the microstrip line avoidance groove 312. The width of the second transition portion 313 can also change linearly or in steps. The width of the second transition portion 313 is the length of the second transition portion 313 in a direction perpendicular to the extension direction of the microstrip line avoidance groove 312.

[0105] A shielding groove 314 may also be provided near the outside of the waveguide opening 311 . The shielding groove 314 is spaced apart from the waveguide opening 311 and the microstrip line avoidance groove 312 connecting the waveguide opening 311 , so as to limit the main energy of the electromagnetic wave to the side of the shielding groove 314 close to the waveguide opening 311 .

[0106] The shielding groove 314 may surround the outer periphery of the waveguide opening 311. In some embodiments, the shielding groove 314 may include Figure 6 The first strip groove 3141, the second strip groove 3142 and the third strip groove 3143 shown in (a) can be arranged at intervals, and the second strip groove 3142 can be connected between the first strip groove 3141 and the third strip groove 3143. The arrangement of the three-segment strip groove is conducive to limiting the electromagnetic wave energy within the range formed by the shielding groove, thereby reducing the electromagnetic wave energy loss of the switching structure.

[0107] The depth of the shielding groove 314 may not be limited. In some embodiments, the depth of the shielding groove 314 may be an odd multiple of λ / 4, so that the impedance at the groove opening, i.e., the first end face, is large, thereby suppressing the propagation of electromagnetic wave energy. In other embodiments, the shielding groove 314 may pass through from the first end face of the waveguide 30 to the opposite side of the first end face. The depth direction of the shielding groove is the normal direction of the first end face of the waveguide.

[0108] The width of the shielding groove 314 may not be limited, for example, the width of the shielding groove 314 may be 0.5 mm. The width direction of the shielding groove 314 may be parallel to the first end surface direction and perpendicular to the extension direction of the shielding groove 314, and the extension direction of the shielding groove 314 may be the axial direction of the shielding groove 314. The shape of the shielding groove 314 may not be limited, and may be circular or polygonal.

[0109] In some embodiments, the shielding groove 314 can be closed outside the waveguide opening, for example, Figure 6 At least one of the first strip groove 3141, the second strip groove 3142 and the third strip groove 3143 in (a) is replaced with a polygonal annular groove formed by connecting a plurality of strip grooves end to end. Figure 6 The fourth groove 3144, the fifth groove 3145, and the sixth groove 3146 shown in the shaded part in (b), that is, the inner contour and the outer contour of each groove are concentric rectangles, and the waveguide port 311 can be arranged outside the groove. The shape of the above groove can also be replaced by a circular groove or other irregular shape groove, which is not limited in this application.

[0110] In other embodiments, the shielding groove 314 is not closed and surrounds the outside of the waveguide opening 311, that is, Figure 6 The shielding groove 314 structure shown in (a).

[0111] The waveguide 30 may further include a waveguide body and a boss 315. The waveguide body includes a waveguide opening 311, a microstrip line avoidance groove 312, and a shielding groove 314. The boss 315 protrudes from the waveguide body toward the circuit board 20 and contacts the circuit board 20. The position of the boss 315 may not be limited, and the shape of the boss 315 may not be limited. In some embodiments, as Figure 6As shown, the boss 315 can be integrally formed. Exemplarily, the boss 315 can include a first boss portion 3151, a second boss portion 3152, and a third boss portion 3153. The first boss portion 3151 is located outside the shielding groove 314. When the shielding groove 314 includes a first row of grooves 3141, a second row of grooves 3142, and a third row of grooves 3143, the first boss portion 3151 can also include a boss portion located on the side of the first row of grooves 3141 away from the waveguide port 311, a boss portion located on the side of the second row of grooves 3142 away from the waveguide port 311, and a boss portion located on the side of the third row of grooves 3143 away from the waveguide port 311. The second boss portion 3152 is an area located between the waveguide port 311 and the shielding groove 314. The third boss portion 3153 includes boss portions located at both sides of the microstrip line avoiding groove 312 . The two boss portions are both strip-shaped bosses, and the axes of the two strip-shaped bosses are parallel to the extending direction of the microstrip line avoiding groove 312 .

[0112] In some other embodiments, the boss may also only include a portion surrounding the waveguide opening, for example Figure 6 As shown in (b), the boss 315 and the part where the microstrip line avoiding groove 312 connects to the waveguide opening 311 surround the waveguide opening 311 and contact the outer contour of the waveguide opening 311 . Figure 6 The shape and position of the middle boss 315 are only given for reference. The shape of the boss 315 may not be limited. The boss 315 may also include a varying number of sub-bosses arranged at intervals. The distances between various parts of the boss 315 and the microstrip line avoidance groove 312, the waveguide opening 311 and the shielding groove 314 may also not be limited.

[0113] The waveguide 30 contacts the circuit board 20 through the boss 315. Since the area of ​​the boss 315 is smaller than the area of ​​the first end surface of the waveguide 30, the contact area between the waveguide 30 and the circuit board 20 is reduced by the boss 315 contacting the circuit board 20, thereby reducing the impact of the processing tolerance of the waveguide 30 and the circuit board 20 on the assembly. The height of the boss 315 may not be limited. In some embodiments, the surface of the boss 315 facing the circuit board 20 may be a plane, so as to contact and cooperate with the plane structure on the circuit board 20.

[0114] In other embodiments, the surface of the boss 315 facing the circuit board 20 may be a curved surface to adapt to certain curved structures on the circuit board 20 or to the use case where the circuit board 20 is a curved surface.

[0115] Other structures, such as grooves and gaps, may also be further etched on the surface of the boss 315 to further reduce the contact area and reduce the impact of the machining tolerance of the boss 315 and the circuit board on assembly.

[0116] Figure 7Shows the corresponding Figure 5 The projection diagram of the waveguide 30 part structure on the circuit board 20. Figure 7 As shown, the structure shown by the dotted line is the projection of part of the structure of the waveguide 30 on the circuit board 20 when the circuit board 20 and the waveguide 30 are used together. The orthographic projection 316 of the outer contour of the waveguide opening 311 on the circuit board 20 and the orthographic projection 317 of the outer contour of the microstrip line avoidance groove 312 on the circuit board 20 are outside the radiation part 231 and the microstrip line 232, that is, the orthographic projection 316 of the outer contour of the waveguide opening 311 and the radiation part 231 are arranged at intervals, and the orthographic projection 317 of the outer contour of the microstrip line avoidance groove and the microstrip line 232 are arranged at intervals. In addition, when used together, the microstrip line 232 is arranged at intervals from the groove wall of the microstrip line avoidance groove 312, so as to avoid short circuit of electromagnetic waves before entering the waveguide opening 311.

[0117] The inner contour of the grounding portion 235 of the circuit board 20 includes a first portion 2351 close to the radiation portion, a second portion 2352 close to the grounding extension portion, and a third portion 2353 close to the main body of the microstrip line avoidance slot. When the circuit board 20 is matched with the waveguide 30, the first portion 2351 can be located outside the projection 316 of the waveguide opening 311 on the circuit board 20, that is, the orthographic projection of the waveguide opening 311 on the circuit board 20 is located within the area surrounded by the inner contour of the grounding portion 235, thereby reducing the alignment error (such as Figure 7 The first portion 2351 may also coincide with the projection 316 of the waveguide opening 311 on the circuit board 20. The relationship between the second portion 2352 or the third portion 2353 and the outer contour projection 318 of the second transition portion 313 of the waveguide 30 and the outer contour projection 317 of the microstrip line avoidance groove is not limited.

[0118] The waveguide 30 and the circuit board 20 may also include structures for connection and positioning, such as screw holes, limiting holes, etc., which are not shown in the figure.

[0119] The present application expands the bandwidth of the transfer structure by changing the shape of the radiation opening 234 of the first metal layer 230 on the circuit board 20. The opening 234 of the radiation portion 231 can be inside the radiation portion 231, that is, spaced apart from the radiation portion 231, or can intersect with the edge of the radiation portion 231.

[0120] The opening 234 of the radiation portion can be a strip-shaped opening. The length of the strip-shaped opening is the dimension in the direction of its extension, and the width of the strip-shaped opening can be the dimension perpendicular to the direction of its extension. In some embodiments, the opening can be a strip-shaped opening with equal width everywhere, wherein the total length of the axis of the strip-shaped opening can be 0.5*λ to 1.5*λ, for example, the length of the opening can be 0.5*λ, or can be λ, or can be 1.5*λ. The width of the strip-shaped opening can be 0.01*λ to 0.2*λ, for example, the width of the opening can be 0.05*λ, or can be 0.1*λ, where λ is the operating wavelength of the switching structure.

[0121] The strip-shaped opening may be composed of different parts. In some embodiments, the strip-shaped opening may be composed of a first strip-shaped opening segment and a second strip-shaped opening segment, and one end of the first strip-shaped opening segment may be connected to one end of the second strip-shaped opening segment, so that the two strip-shaped opening segments form a certain angle, for example, when the angle is 90°, that is, when the first strip-shaped opening segment is perpendicular to the second strip-shaped opening segment, the opening is roughly L-shaped, and when the angle is not 90°, the opening is roughly V-shaped.

[0122] In other embodiments, in addition to the first strip opening segment and the second strip opening segment, the opening 234 further includes a third strip opening segment, one end of the third strip opening segment is connected to the other end of the second strip opening segment, the other end of the second strip opening segment is away from the end connected to the first strip opening segment, and the third strip opening segment is parallel to the first strip opening segment and spaced apart. The second strip opening segment can be perpendicular to the first strip opening segment, so that the three segments form a U-shaped structure.

[0123] In other embodiments, the opening 234 may include a fourth strip opening segment and a fifth strip opening segment, the fourth strip opening segment extends along the first direction to the first edge of the radiation portion, the fifth strip opening segment extends along the second direction to the first edge, and the fourth strip opening segment intersects with the fifth strip opening segment at the first edge.

[0124] The fourth strip opening section and the fifth strip opening section roughly form a V-shaped structure, which expands the working bandwidth range of the switching structure.

[0125] The first edge may be adjacent to an edge of the radiation portion 231 connected to the microstrip line 232 .

[0126] The “V” vertex of the V-shaped opening is located adjacent to the edge where the radiation portion 231 is connected to the microstrip line 232 .

[0127] Figure 8 FIG. 2 is a schematic diagram showing a structure of a radiation opening 234 of a first metal layer 230 of a circuit board 20 provided in an embodiment of the present application. Figure 8As shown, the opening is a strip-shaped opening, located inside the radiation portion 231, and includes a first strip-shaped opening section 2341, a second strip-shaped opening section 2342, and a third strip-shaped opening section 2343. The first strip-shaped opening section 2341 and the third strip-shaped opening section 2343 are parallel to each other, and the second strip-shaped opening section 2342 connects the first strip-shaped opening section 2341 and the third strip-shaped opening section 2343. The second strip-shaped opening section 2342 is perpendicular to the first strip-shaped opening section 2341, and the three strip-shaped opening sections roughly form a U-shaped structure, and the total length 2a+b of the three strip-shaped opening sections is approximately 0.5*λ to 1.5*λ, and for example, a is 0.3*λ, and b is 0.6*λ; or a is 0.15*λ, and b is 0.3*λ. The width e of the strip-shaped opening section is approximately 0.01*λ to 0.2*λ. For example, e may be 0.01*λ, or e may be 0.05*λ, or e may be 0.1*λ.

[0128] In some embodiments of the present application, the length of the first strip opening segment 2341 and the second strip opening segment 2342 of the U-shaped opening can be 0.25*λ, the length of the third strip opening segment 2343 can be 0.55*λ, the width of each strip opening segment can be 0.05*λ, and the length and width of the entire radiation portion 231 are not limited. For example, the width c can be 0.45*λ~λ, and the length d of the radiation portion can be 0.75*λ~2*λ, where λ is the working wavelength of the switching structure.

[0129] Fig. 9 Shows the corresponding Figure 8 The simulation results of the relationship between the scattering parameters and the operating frequency are shown in Figure 2. Fig. 9 As shown, when the frequency is 76GHz, s12 is -2.77dB, s11 is -22.4dB, and when the frequency is 81GHz, s12 is -3.3dB, s11 is -24.2dB. In the frequency range of 76GHz to 81GHz, the transmission coefficient (i.e. Fig. 9 The change of s12 line shown by the dashed line in the figure is relatively gentle, greater than -3.3dB; the return loss (s11 line shown by the solid line in the figure) shows several resonance points, but in the range of 76GHz to 81GHz, it is almost all less than -20dB. It can be seen that the impedance matching of the transfer structure of the present application is good, which reduces the electromagnetic wave reflection energy loss caused by impedance discontinuity when the electromagnetic wave enters the circuit board from the microstrip line, and the working bandwidth range is relatively large.

[0130] In addition to the above U-shaped opening, the opening may also be a V-shaped opening, a W-shaped opening, etc. The total length and width of the opening meet the requirements of impedance matching performance, etc.

[0131] Fig.10 A schematic structural diagram of a radiation portion opening provided in an embodiment of the present application is shown.

[0132] exist Fig.10 In the figure, the right edge of the radiation portion is the second edge 1001, and the figure also shows two symmetry axes 1002 and 1003 of the radiation portion.

[0133] Fig.10 (a) is an embodiment of the internal opening of the radiation portion, wherein the internal opening includes four strip openings, one end of the first strip opening is connected to one end of the second strip opening, the first strip opening extends to the opposite side of the second edge 1001, and the extension direction deviates from the symmetry axis 1002 of the radiation portion, the second strip opening extends to the second edge 1001, and the extension direction deviates from the symmetry axis 1002 of the radiation portion. The third strip opening is connected to one end of the fourth strip opening, the third strip opening extends to the opposite side of the second edge 1001, and the extension direction deviates from the symmetry axis 1002 of the radiation portion, the fourth strip opening extends to the second edge 1001, and the extension direction deviates from the symmetry axis 1002 of the radiation portion. The other ends of the second strip opening and the third strip opening are connected to each other, and the four strip openings are W-shaped. In some embodiments, the first strip opening and the fourth strip opening can be symmetrical with respect to the symmetry axis 1002, and the second strip opening and the third strip opening can be symmetrical with respect to the symmetry axis 1002.

[0134] Fig.10 (b) is an embodiment of the internal opening of the radiation part, the internal opening includes two sections of strip openings, the first section of the strip opening is vertically connected to the second section of the strip opening, the first section of the strip opening extends toward the adjacent edge of the second edge 1001 along the direction of the symmetry axis 1002 of the radiation part, and the second section of the strip opening extends toward the second edge 1001 along the direction of the symmetry axis 1003 of the radiation part, and the two sections of the strip opening form an L shape as a whole.

[0135] Fig.10 (c) is an embodiment of the internal opening of the radiation portion, the internal opening includes two strip openings, one end of the two strip openings is connected, one strip opening extends to the opposite side of the second edge 1001, the extension direction deviates from the direction of the symmetry axis 1003 of the radiation portion, and the other strip opening extends to the second edge 1001, the extension direction deviates from the direction of the symmetry axis 1003 of the radiation portion, and the two strip openings form a V shape as a whole. In some embodiments, one strip opening and the other strip opening can be symmetrical with respect to the symmetry axis 1002.

[0136] Fig.10(d) is an embodiment of the internal opening of the radiation portion, the internal opening includes three sections of strip openings, wherein the first section of the strip opening is connected to one end of the second section of the strip opening, the first section of the strip opening extends from the connected end along the direction of the symmetry axis 1003 of the radiation portion to the opposite side of the second edge 1001, the second section of the strip opening extends from the connected end along the direction deviating from the symmetry axis to the opposite side of the second edge 1001, the third section of the strip opening is connected to one end of the second section of the strip opening away from the first section of the strip opening, and the third section of the strip opening extends toward the second edge 1001 along the direction of the symmetry axis 1003 of the radiation portion, and the three sections of the strip opening form a Z shape as a whole.

[0137] It should be understood that, in addition to Figure 7 and Fig.10 The illustrated shape of the internal opening of the radiation portion can also be other shapes, as long as the internal opening is not closed and meets the above requirements for the total length and width of the opening.

[0138] In addition, in addition to the case where the opening is completely inside, the above opening can also be rotated at a certain angle or one of the two ends of the opening can be connected to the edge of the radiation portion.

[0139] Fig.10 The various opening structures shown change the coupling capacitance value of a certain frequency point of the transfer structure, increase the resonance point, and expand the matching bandwidth of the transfer structure.

[0140] Fig.11 FIG. 1 shows a schematic structural diagram of a radiation portion opening provided in an embodiment of the present application. Fig.11 As shown, there are three openings at two edges of the radiating portion, the size of the first opening 1101 is W1*L1, the size of the second opening 1102 is W2*L2, and the size of the third opening 1103 is W3*L3 (the right edge of the radiating portion is the second edge 1104, connected to the microstrip line 232, which is not shown in the microstrip line diagram). L1 or L2 is smaller than the width of the radiating portion, and W1+W2+W3 is smaller than the length of the radiating portion. The above W1, W2, and W3 are the sizes of each opening in a direction perpendicular to the second edge, and the above L1, L2, and L3 are the sizes of each opening in a direction parallel to the second edge.

[0141] In the embodiment of the present application, W1*L1 can be approximately (0.1*λ)*(0.15*λ), W1*L1 can also be approximately (0.1*λ)*(0.15*λ), and W3*L3 can be approximately (0.05*λ)*(0.05*λ).

[0142] By opening the edge of the radiation part, the current diffraction path can be increased, the working bandwidth of the switching structure can be expanded, and the application scenarios of the switching structure of the present application can be improved.

[0143] In the embodiment of the present application, the second edge where the radiation portion 231 is connected to the microstrip line 232 and the edge opposite to the edge where the radiation portion 231 is connected to the microstrip line 232 may also be opened.

[0144] Fig.12 A schematic structural diagram of a radiation portion opening provided in an embodiment of the present application is shown.

[0145] Fig.12 The right edge of the radiation portion is defined as the second edge 1201, ie, the edge where the microstrip line 232 connects to the radiation portion 231 (where the microstrip line is not shown), and the two symmetry axes of the radiation portion are 1202 and 1203 respectively (without considering the symmetry of the opening).

[0146] Fig.12 (a) is an embodiment of an edge opening of the radiation portion, wherein the edge opening comprises two strip openings: one of the strip openings extends from a vertex where an adjacent edge of the second edge intersects with the second edge to an opposite side of the adjacent edge, and the extension direction deviates from the direction of the symmetry axis 1202 of the radiation portion; the other strip opening extends from another vertex of the adjacent edge to an opposite side of the adjacent edge, and the extension direction deviates from the direction of the symmetry axis 1202 of the radiation portion.

[0147] In another embodiment, one of the strip openings extends from the vertex where an adjacent edge of the second edge intersects with the second edge to the opposite edge of the second edge, and the extension direction deviates from the direction of the symmetry axis 1202 of the radiation portion; the other strip opening extends from the other vertex of the adjacent edge to the second edge, and the extension direction deviates from the direction of the symmetry axis 1202 of the radiation portion.

[0148] Fig.12 (b) is another embodiment of the edge opening of the radiation portion, the edge opening includes two strip openings, one end of the two strip openings are connected at a point on an adjacent side of the second edge, one of the strip openings extends from the connected point to the second edge, and the extension direction deviates from the direction of the symmetry axis 1202, and the other strip opening extends from the connected point to the opposite side of the second edge, and the extension direction deviates from the direction of the symmetry axis of the radiation portion.

[0149] Fig.12 (c) is another embodiment of the edge opening of the radiation portion, the edge opening comprises a strip opening, one end of the strip opening is at a point above an adjacent side of the second edge, and extends toward another adjacent side. In one embodiment, the extension direction is parallel to the symmetry axis 1202 of the radiation portion.

[0150] Fig.12(d) is another embodiment of the edge opening of the radiation portion, the edge opening includes two strip openings, one end of one strip opening is at a point of an adjacent side of the second edge, and extends to the other adjacent side, and the extension direction is parallel to the symmetry axis 1202 of the radiation portion; one end of the other strip opening is at another point of the adjacent side, and extends to the other adjacent side, and the extension direction is parallel to the symmetry axis 1202 of the radiation portion. The two strip openings can be symmetrical with respect to the symmetry axis 1202 of the radiation portion 231.

[0151] Fig.12 (e) is another embodiment of the edge opening of the radiation portion, the edge opening comprises a strip opening, one end of the strip opening is at a point on the opposite side of the second edge, and extends toward the second edge, and the extension direction is parallel to the symmetry axis 1203 of the radiation portion. In other words, the strip opening can be arranged perpendicularly relative to the second edge.

[0152] Fig.12 (f) is another embodiment of the edge opening of the radiation portion, the edge opening includes two strip openings, one end of one strip opening is at the opposite side of the second edge and extends toward the second edge, and the extension direction is parallel to the direction of the symmetry axis 1203 of the radiation portion; one end of the other strip opening is at a point on the adjacent side of the second edge and extends toward the opposite side of the adjacent side, and the extension direction is parallel to the direction of another symmetry axis 1202 of the radiation portion, and the two strip openings do not intersect.

[0153] Depend on Fig.12 It can be seen that the length, width and position of the edge opening can be set arbitrarily, and the technical effect of the present application can be achieved, that is, the bandwidth of the switching structure is expanded.

[0154] In addition, the switching structure of the present application can be implemented in an array manner. For the circuit board 20, multiple radiating parts and their microstrip lines 232 are arranged in a certain manner on the circuit board 20. For the waveguide, it can also be arranged in the same manner as the radiating part. In addition, the waveguide can share one or more edges of the shielding groove.

[0155] Fig.12 The various opening structures shown change the coupling capacitance value of a certain frequency point of the transfer structure, increase the resonance point, and expand the matching bandwidth of the transfer structure.

[0156] Fig.13 FIG. 1 shows a schematic structural diagram of a switching structure array provided in an embodiment of the present application. Fig.13As shown, the transfer structure may include a plurality of waveguides, and the plurality of waveguides may include waveguide a, waveguide b, waveguide c, and waveguide d. The plurality of waveguides may be arranged in an array, for example. The waveguide ports of waveguide a and waveguide b may be arranged opposite to each other, and the microstrip line avoidance groove of waveguide a and the microstrip line avoidance groove of waveguide b are respectively located on both sides of their respective waveguide ports, and extend in directions away from their respective waveguide ports. The waveguide port of waveguide a and the waveguide port of waveguide c are arranged opposite to each other, and the microstrip line avoidance groove of waveguide a and the microstrip line avoidance groove of waveguide c are arranged opposite to each other. The waveguide ports of waveguide c and waveguide d may be arranged opposite to each other, and the microstrip line avoidance groove of waveguide c and the microstrip line avoidance groove of waveguide d are respectively located on both sides of their respective waveguide ports, and extend in directions away from their respective waveguide ports.

[0157] The shielding groove includes a first side 1301, a second side 1302, a third side 1303, a fourth side 1304, a fifth side 1305, a sixth side 1306, a seventh side 1307 and an eighth side 1308. The first side 1301, the third side 1303 and the fourth side 1304 surround the waveguide port 1 of the waveguide a; the second side 1302, the third side 1303 and the fifth side 1305 surround the waveguide port 2 of the waveguide b; the fourth side 1304, the sixth side 1306 and the seventh side 1307 surround the waveguide port 3 of the waveguide c; the fifth side 1305, the sixth side 1306 and the eighth side 1308 surround the waveguide port 4 of the waveguide d. The waveguide ports of waveguide a and waveguide b are located on both sides of the third side 1303, the waveguide ports of waveguide a and waveguide c are located on both sides of the fourth side 1304, the waveguide ports of waveguide b and waveguide d are located on both sides of the fifth side 1305, the waveguide ports of waveguide c and waveguide d are located on both sides of the sixth side 1306, and adjacent waveguides share the side of a shielding groove. Waveguide a and waveguide b share the third side 1303 of the shielding groove, waveguide a and waveguide c share the fourth side 1304 of the shielding groove, waveguide b and waveguide d share the fifth side 1305 of the shielding groove, and waveguide c and waveguide d share the sixth side 1306 of the shielding groove.

[0158] The radiation parts on the circuit board 20 can be arranged in the same manner. Fig.13 Inside the four waveguide ports, the microstrip lines 232 extend along the four microstrip line 232 avoidance slots. Therefore, the technical solution of the switching structure of the present application can form an array and be integrated into other devices or modules.

[0159] It should be understood that Fig.13 Only one way of arranging the waveguide, the radiating portion and the microstrip line 232 array is given as an example. The present application may also arrange the waveguide, the radiating portion and the microstrip line 232 in other ways, so as to enhance the integration of the switching structure of the present application.

[0160] In addition, the above are all applications in which the microstrip line 232 and the waveguide of the transfer structure circuit board 20 of the present application are located on the same side, that is, the microstrip line or feed source and the waveguide are coplanarly transferred on the same side of the circuit board, that is, the transfer is performed on the first metal layer side in the present application. The transfer structure of the present application can also be used for skew transfer.

[0161] Fig.14 A schematic diagram of another switching structure provided in an embodiment of the present application is shown.

[0162] Depend on Fig.14 It can be seen that the microstrip line 232 is divided into two sections, a first section 2321 on the first metal layer 230 in contact with the waveguide and a second section 2322 on the second metal layer 210 on the circuit board 20 ( Fig.12 The second section 2322 located on the second metal layer 210 can connect the feed source of the entire switching structure, and the two sections of microstrip lines are connected through the metal via 2323, so that the electromagnetic wave is transferred from the second metal layer 210 side to the waveguide through the metal via in the first metal layer 230. Through the switching structure of the embodiment of the present application, the circuit board 20 and the waveguide can be flexibly switched out of plane. Compared with the ordinary out of plane switching method, the metal via solution is easy to integrate, and the bandwidth of the switching structure of the present application can be effectively expanded through the opening of the radiation part.

[0163] The switching structure introduced in this application can be flexibly applied to various coplanar switching and non-planar switching scenarios, can effectively expand the bandwidth of the switching structure, cover the commonly used bandwidth range, and is easy to assemble and can be applied to various radar and test scenarios.

[0164] The transition structure of the present application is only illustrated by taking the example of the feed source entering the radiation part transition structure from the microstrip line 232. In other cases, the feed source of the transition structure of the present application can also be a structure on the waveguide side, including the waveguide or its upper-level antenna, SIW, etc., so as to introduce the electromagnetic wave energy from the waveguide into the microstrip line and into other structures of the circuit board for further processing.

[0165] The present application also provides an antenna, which includes Figures 2 to 14 Any structure in .

[0166] The embodiment of the present application further provides a detection device, which includes the antenna described above. Exemplarily, the detection device is a radar.

[0167] An embodiment of the present application further provides a terminal, which includes the detection device described above. Exemplarily, the terminal may be a vehicle.

[0168] An embodiment of the present application also provides a vehicle, which includes the detection device described above.

[0169] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A switching structure, characterized in that: The circuit board (20) comprises a waveguide (30), a first metal layer (230), a second metal layer (210) and a dielectric layer (220), wherein the dielectric layer (220) is located between the first metal layer (230) and the second metal layer (210), the first metal layer (230) comprises a radiation portion (231) and a microstrip line (232), the microstrip line (232) is connected to one end of the radiation portion (231), and the second metal layer (210) is grounded; the waveguide is located on a side of the circuit board (20) close to the first metal layer (230); The radiation portion (231) has an opening (234), so that the radiation portion (231) forms at least two resonant frequencies.

2. The switching structure according to claim 1, characterized in that: The waveguide (30) comprises a microstrip line avoidance groove (312) and a waveguide opening (311).

3. The switching structure according to claim 1 or 2, characterized in that: The radiation portion (231) is rectangular, and the microstrip line (232) is arranged to deviate from the symmetry axis of the radiation portion (231).

4. The switching structure according to any one of claims 1 to 3, characterized in that: The opening (234) is a strip-shaped opening, and the opening (234) is spaced apart from the edge of the radiation portion (231).

5. The switching structure according to claim 3, characterized in that: The opening (234) is a strip-shaped opening, and one end of the opening (234) is connected to an edge of the radiation portion (231) that is away from the edge connected to the microstrip line (232).

6. The switching structure according to claim 4 or 5, characterized in that: The opening (234) comprises a first strip-shaped opening section and a second strip-shaped opening section, and one end of the second strip-shaped opening section is connected to one end of the first strip-shaped opening section.

7. The switching structure according to claim 6, characterized in that: The opening (234) also includes a third strip-shaped opening segment, one end of the third strip-shaped opening segment is connected to the other end of the second strip-shaped opening segment, the other end of the second strip-shaped opening segment is away from the end connected to the first strip-shaped opening segment, and the third strip-shaped opening segment is parallel to the first strip-shaped opening segment and is spaced apart.

8. The switching structure according to claim 6 or 7, characterized in that: The second strip-shaped opening section is vertically arranged relative to the first strip-shaped opening section.

9. The switching structure according to any one of claims 4 to 8, characterized in that: The length of the opening (234) is 0.5*λ to 1.5*λ, the width of the opening (234) is 0.01*λ to 0.2*λ, and λ is the working wavelength of the switching structure.

10. The switching structure according to claim 3, characterized in that: The opening (234) comprises a fourth strip-shaped opening segment and a fifth strip-shaped opening segment, the fourth strip-shaped opening segment extends along the first direction to a first edge of the radiation portion (231), the fifth strip-shaped opening segment extends along the second direction to the first edge, and the fourth strip-shaped opening segment intersects with the fifth strip-shaped opening segment at the first edge.

11. The switching structure according to claim 10, characterized in that: The first edge is adjacent to an edge of the radiation portion (231) connected to the microstrip line (232).

12. The switching structure according to any one of claims 2 to 11, characterized in that: The waveguide (30) further comprises a shielding groove (314), wherein the shielding groove (314) is arranged on a side of the waveguide (30) close to the waveguide opening (311), and is spaced apart from the waveguide opening (311) and the microstrip line avoidance groove (312).

13. The switching structure according to claim 12, characterized in that: The shielding groove (314) surrounds the outer periphery of the waveguide opening (311).

14. The switching structure according to claim 12 or 13, characterized in that: The depth of the shielding groove (314) is an odd multiple of λ / 4, where λ is the operating wavelength of the switching structure.

15. The switching structure according to any one of claims 2 to 14, characterized in that: The waveguide (30) further comprises a waveguide body and a boss (315), wherein the boss (315) protrudes from the waveguide body toward the circuit board (20) and contacts the circuit board (20).

16. The switching structure according to any one of claims 1 to 15, characterized in that: The first metal layer (230) further includes a first transition portion (233) for impedance matching between the microstrip line (232) and the radiation portion (231), wherein the first transition portion (233) is connected between the radiation portion (231) and the microstrip line (232), in a direction from the radiation portion (231) to the microstrip line (232).

17. The switching structure according to any one of claims 1 to 16, characterized in that: The first metal layer (230) also includes a grounding portion, which surrounds the outer periphery of the radiation portion (231) and the microstrip line (232) and is spaced apart from the radiation portion (231) and the microstrip line (232), the grounding portion is in contact with the waveguide (30), and the grounding portion is conductively connected to the second metal layer (210).

18. The switching structure according to claim 17, characterized in that: The grounding portion (235) is electrically connected to the second metal layer (210) via a metallized through hole (237) or a metal wall.

19. The switching structure according to claim 17 or 18, characterized in that: The orthographic projection of the waveguide opening (311) on the circuit board (20) is located within the area surrounded by the inner contour of the grounding portion (235).

20. The switching structure according to any one of claims 17 to 19, characterized in that: The grounding portion comprises a grounding portion body and a grounding extension portion (236), wherein the grounding extension portion (236) is arranged opposite to and spaced from a connection point between the microstrip line (232) and the radiation portion (231), and the grounding extension portion (236) extends from the grounding portion body toward the connection point.

21. An antenna, characterized in that: The antenna comprises the switching structure according to any one of claims 1 to 20.

22. A detection device, characterized in that: The detection device comprises the antenna as claimed in claim 21.

23. A terminal, characterized in that: The terminal comprises the detection device as claimed in claim 22.

24. The terminal according to claim 23, characterized in that The terminal is a vehicle.

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