A thin film type laser sensing and damage monitoring integrated sensing system

Abstract

The application provides a thin film type laser sensing and damage monitoring integrated sensing system, which comprises a flexible thin film sensor, a data acquisition unit and a signal processing unit, wherein the flexible thin film sensor comprises two layers of thermistor arrays arranged in mutually orthogonal directions. The application can realize rapid and accurate measurement of laser irradiation parameters such as laser power density, spot size and irradiation position, has integrated monitoring functions of damage position and size such as laser damage and space debris impact damage, can be arranged on the surface of an aerospace vehicle in a large area, realizes rapid sensing of human and space environment threats, and has the advantages of simple structure, low cost and the like.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of thin film sensing technology, and particularly relates to a thin film type laser sensing and damage monitoring integrated sensing system. BACKGROUND

[0002] The damage mode of high-energy continuous laser weapon to materials is mainly thermal damage under high-power density laser irradiation. The protection research against high-energy laser weapon threat focuses on two aspects: one is the development of laser protection film materials based on linear, nonlinear optics or phase change principle to improve the laser damage resistance of the structure; the other is to quickly respond to the laser threat by detecting the laser power, spot size, attack position and other signals to evaluate the threat level of the laser attack and give an alarm signal for taking appropriate active defense measures.

[0003] On the other hand, with the increase of human space activities, more and more space debris are left in the Earth's orbit. The average speed of space debris is as high as 10 km / s, and collision with spacecraft will cause structural damage, functional failure or even disintegration of the spacecraft, posing a great safety hazard to the spacecraft in orbit. The average speed of space debris is as high as 10 km / s, and the centimeter and millimeter space debris cannot be accurately tracked and orbited due to the limitation of current monitoring capability, which is the most dangerous space debris with potential threat. For such untraceable space debris, rapid and accurate positioning of the impact position can provide necessary information for evaluating the damage degree of space debris and repairing the impact damage position in orbit.

[0004] Currently, for laser irradiation sensing, optical laser warning devices are mostly used, which have no ability to detect the energy density of irradiation laser, and the alarm is rigid, large in size and heavy in weight, which is difficult to be integrated and arranged on a flexible thin film structure, and also has no damage identification function such as space debris impact. Therefore, to establish a laser sensing and damage monitoring integrated sensing system of flexible thin film structure can take into account the rapid sensing of laser power and other parameters and the damage position and size monitoring, which has important application prospect in the field of satellite safety. SUMMARY

[0005] To solve the above problems, the present application provides a thin film type laser sensing and damage monitoring integrated sensing system, which can be used for rapid sensing and response of human threats such as laser attack and space environmental threats such as space debris, and has a perforation damage monitoring function, so as to realize the integration of laser sensing and damage monitoring.

[0006] A thin film type laser sensing and damage monitoring integrated sensing system, comprising a flexible thin film sensor, a data acquisition unit and a signal processing unit.

[0007] The flexible thin film sensor is used for accepting laser irradiation or space debris impact, wherein the resistance of the thermistor on the flexible thin film sensor is related to the power of the laser irradiation, the laser spot size, the laser irradiation position, and the space debris impact position.

[0008] The data acquisition unit is used for collecting the resistance signals of the thermistors on the flexible thin film sensor in real time.

[0009] The signal processing unit is used for receiving the resistance signals of the thermistors collected by the data acquisition unit, and sensing the power of the laser irradiation, the laser spot size, and the laser irradiation position in real time according to the resistance change of the thermistors, and obtaining the damage position and size information when the flexible thin film sensor is damaged by the laser irradiation or the space debris impact.

[0010] Further, the flexible thin film sensor is composed of a flexible substrate 1, an upper surface transition layer 2, a lower surface transition layer 6, an upper surface thermistor layer 3, a lower surface thermistor layer 7, an upper surface lead layer 4, a lower surface lead layer 8, an upper surface protective layer 5, and a lower surface protective layer 9; wherein the upper surface transition layer 2, the upper surface thermistor layer 3, the upper surface lead layer 4, and the upper surface protective layer 5 are sequentially covered on the upper surface of the flexible substrate 1, and the lower surface transition layer 6, the lower surface thermistor layer 7, the lower surface lead layer 8, and the lower surface protective layer 9 are sequentially covered on the lower surface of the flexible substrate 1.

[0011] Further, the linear resistance array arranged on the upper surface thermistor layer 3 is orthogonal to the linear resistance array arranged on the lower surface thermistor layer 7.

[0012] Further, the flexible substrate 1 is a flexible film or foil with a thickness of 10 μm to 500 μm.

[0013] When the flexible substrate 1 is an insulating flexible film or foil, the materials of the upper surface transition layer 2 and the lower surface transition layer 6 are Ti, Cr, or Ta; when the flexible substrate 1 is a conductive film or foil, the upper surface transition layer 2 and the lower surface transition layer 6 are a combination of multiple films, wherein the structure of the multiple films includes an alloy film, an Al2O3 insulating layer, and an adhesion layer prepared on the surface of the Al2O3 insulating layer.

[0014] Further, the single thermistor in the linear resistance array of the upper surface thermistor layer 3 and the lower surface thermistor layer 7 is a long strip structure with a width of 60 μm to 6 mm, and the resistance array thermistor spacing is 20 μm to 2 mm, wherein the length covers the entire sensing area of the flexible thin film sensor.

[0015] Further, the single thermistor width direction is composed of multiple thin thermistor strips in parallel, and the parallel nodes are located at the two ends of the thermistor length direction, the multiple thin thermistor strips of the single thermistor are arranged in an equidistant array, the width and interval of a single strip are 20 μm-2 mm, and the number of parallel strips is 2-20.

[0016] Further, the thickness of the thermistor layer is between 100 nm and 20 μm, and the preferred material is one of Pt, Ni, and NiCr thermistor films with good resistance-temperature coefficient and linearity in a wide temperature range.

[0017] Further, the upper surface lead layer 4 and the lower surface lead layer 8 each include multiple separated leads, the upper surface lead layer 4 and the lower surface lead layer 8 are respectively used to form electrical contact with the upper surface thermistor layer 3 and the lower surface thermistor layer 7 and provide an electrical interface for sensor measurement, one end of each thermistor strip in the linear resistance array is connected to a single lead to form electrical contact, and the other end of the thermistor strip shares one or several leads with multiple thermistor strips.

[0018] Further, the upper surface protective layer 5 and the lower surface protective layer 9 are polyimide films or oxide / nitride ceramic films.

[0019] Advantages:

[0020] 1. The application provides a thin film type laser sensing and damage monitoring integrated sensing system, which can realize rapid and accurate measurement of laser irradiation parameters such as laser power density, spot size, and irradiation position by arranging row / column resistance linear arrays on the upper and lower surfaces of a flexible substrate, and has the functions of laser damage and spatial debris impact damage position and size monitoring, can be arranged on the surface of a key component such as a satellite in a large area, realizes rapid sensing of human and space environment threats, has the advantages of simple structure and low cost, and has important application prospects in the field of satellite safety.

[0021] 2. The application provides a thin film type laser sensing and damage monitoring integrated sensing system, which realizes rapid acquisition of resistance value signals of multiple channels by a data acquisition unit, and can realize rapid calculation and visualization of laser power, spot size, and irradiation center position within 1 s of laser irradiation by combining an optimized laser parameter rapid inversion algorithm, and the high response speed provides strong support for reducing laser irradiation damage and enhancing the space safety level of a spacecraft such as a satellite. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 Fig. 1 is a structural schematic diagram of a flexible thin film sensor in the laser sensing and damage monitoring integrated thin film sensing system of the application.

[0023] Figure 2A cross-sectional view of a flexible thin film sensor in a laser perception and damage monitoring integrated thin film sensing system of the present application;

[0024] Figure 3 An upper surface thermistor array arrangement diagram of the flexible thin film sensor in the laser perception and damage monitoring integrated thin film sensing system of the present application;

[0025] Figure 4 A data acquisition unit block diagram of the laser perception and damage monitoring integrated thin film sensing system of the present application.

[0026] Figure 5 A signal processing unit processing flowchart of the laser perception and damage monitoring integrated thin film sensing system of the present application.

[0027] 1-flexible substrate; 2-upper surface transition layer; 3-upper surface thermistor layer; 4-upper surface lead layer; 5-upper surface protective layer; 6-lower surface transition layer; 7-lower surface thermistor layer; 8-lower surface lead layer; 9-lower surface protective layer. DETAILED DESCRIPTION

[0028] In order to make the personnel in the technical field better understand the scheme of the present application, the technical scheme in the embodiments of the present application will be clearly and completely described below in combination with the drawings in the embodiments of the present application.

[0029] A thin film type laser perception and damage monitoring integrated sensing system, comprising a flexible thin film sensor, a data acquisition unit, and a signal processing unit; wherein the flexible thin film sensor comprises two layers of thermistor arrays arranged in mutually orthogonal directions;

[0030] The flexible thin film sensor is used to receive laser irradiation or space debris impact, wherein the resistance value of the thermistor on the flexible thin film sensor is related to the power of the laser irradiation, the laser spot size, the laser irradiation position, and the space debris impact position;

[0031] The data acquisition unit is used to collect the resistance value signals of each thermistor on the flexible thin film sensor in real time;

[0032] The signal processing unit is used to receive the resistance value signals of each thermistor collected by the data acquisition unit, and to perceive the power of the laser irradiation, the laser spot size, and the laser irradiation position in real time according to the resistance value changes of each thermistor, and to obtain the damage position and size information when the flexible thin film sensor is damaged by laser irradiation or space debris impact.

[0033] It should be noted that the above description is only a specific implementation of the present application. Figure 1 , Figure 2 , Figure 3The flexible thin film sensor is composed of a flexible substrate 1, an upper surface transition layer 2, a lower surface transition layer 6, an upper surface thermistor layer 3, a lower surface thermistor layer 7, an upper surface lead layer 4, a lower surface lead layer 8, an upper surface protective layer 5 and a lower surface protective layer 9; wherein the upper surface transition layer 2, the upper surface thermistor layer 3, the upper surface lead layer 4 and the upper surface protective layer 5 are sequentially covered on the upper surface of the flexible substrate 1, and the lower surface transition layer 6, the lower surface thermistor layer 7, the lower surface lead layer 8 and the lower surface protective layer 9 are sequentially covered on the lower surface of the flexible substrate 1.

[0034] Meanwhile, the linear resistance array arranged on the upper surface thermistor layer 3 is orthogonal to the linear resistance array arranged on the lower surface thermistor layer 7; the upper surface lead layer 4 and the lower surface lead layer 8 are respectively used to form electrical contact with the upper surface thermistor layer 3 and the lower surface thermistor layer 7 and provide an electrical interface for sensor measurement.

[0035] The flexible substrate has a thickness of 10-500 μm; in order to improve the stability and space environment applicability of the integrated thin film sensor, the flexible substrate can be a flexible film or foil such as a polyimide film, a stainless steel foil, a pure nickel and nickel-based alloy foil, mica, etc.; the transition layer is located on the upper and lower surfaces of the flexible substrate and has a thickness of 10-5 μm; the transition layer can be a single layer or a combination of multiple layers of film and is deposited on the upper and lower surfaces of the flexible substrate 1 by a film preparation process such as evaporation or sputtering; the transition layer is mainly used to enhance the adhesion of the thermistor layer prepared on the surface of the flexible substrate 1 and to provide an insulating layer when the flexible substrate 1 is a conductive film or foil.

[0036] Further, when the flexible substrate 1 is an insulating flexible film or foil, the transition layer is used to enhance the adhesion between the thermistor film and the flexible substrate 1; the materials of the upper surface transition layer 2 and the lower surface transition layer 6 are one of Ti, Cr and Ta; when the flexible substrate 1 is a conductive film or foil such as a stainless steel foil, a pure nickel and nickel-based alloy foil, etc., the upper surface transition layer 2 and the lower surface transition layer 6 are a combination of multiple layers of film and are used for insulation and adhesion enhancement between the metal substrate and the thermistor; the structure of the multiple layers of film includes an alloy film such as NiCoCrAlY and FeCrAlY, an Al2O3 insulating layer formed by high-temperature aluminum extraction and an adhesion layer such as Ti, Cr and Ta prepared on the surface of the Al2O3 insulating layer.

[0037] The thermistor layer is prepared above the transition layer; after being patterned, the thermistor layer is arranged in a high-density linear thermistor array on the upper and lower surfaces of the flexible substrate; the number of thermistors in the array is preferably 10-256; the linear resistance array arranged on the upper surface thermistor layer 3 is orthogonal to the linear resistance array arranged on the lower surface thermistor layer 7.

[0038] Further, to improve the monitoring accuracy of the damage shape and size, the single thermistor in the linear resistance array constituting the upper surface thermistor layer 3 and the lower surface thermistor layer 7 is a long strip structure with a width of 60 μm to 6 mm, and the thermistor spacing in the resistance array is 20 μm to 2 mm, wherein the length of the single thermistor in the thermistor layer covers the entire sensing thin film sensing area, and the width direction is a plurality of parallel thin resistance strips, and the plurality of thin resistance strips constituting the single thermistor are arranged in an equidistant array.

[0039] Specifically, the single thermistor width direction is composed of a plurality of parallel thin thermistor strips, and the parallel nodes are located at the two ends of the length direction of the thermistor, the plurality of thin thermistor strips constituting the single thermistor are arranged in an equidistant array, the width and spacing of a single resistance strip are 20 μm to 2 mm, and the number of parallel strips is 2 to 20.

[0040] Further, the thickness of the thermistor layer is between 100 nm and 20 μm, and the preferred material is a Pt, Ni, NiCr or other thermistor film with good resistance temperature coefficient and linearity in a wide temperature range.

[0041] The lead layer is used to form reliable electrical contact with the thermistor layer and provide an electrical interface for sensor measurement, and the lead layer is patterned into a plurality of separate leads, to reduce the total number of leads, one or more leads can be shared at one end of the linear resistance array, and the other end of each single resistance array is connected to a single lead to form electrical contact. That is, the upper surface lead layer 4 and the lower surface lead layer 8 are respectively used to form electrical contact with the upper surface thermistor layer 3 and the lower surface thermistor layer 7 and provide an electrical interface for sensor measurement, one end of each thermistor strip in the linear resistance array is connected to a single lead to form electrical contact, and the other end of the thermistor strip shares one or more leads with a plurality of thermistor strips. Based on this, for a linear array of n resistance, the total number of leads is between n+1 and 2n.

[0042] The protective layer can be one of polyimide film, oxide / nitride ceramic film and other insulating films, and the protective layer is located on the upper layer of the thermistor layer and is used to form passivation protection for the thermistor layer.

[0043] Reference Figure 4 The data acquisition unit provided by the embodiment one of the application is used to realize fast acquisition of the resistance value of the sensing thin film thermistor, and the data acquisition unit comprises a power supply, a signal conditioning circuit, an ADC acquisition circuit, an FPGA data processing unit and a communication interface.

[0044] Reference Figure 5The signal processing unit in the laser sensing and damage monitoring integrated thin film sensing system provided by the embodiment one of the present application is used for receiving the resistance value signals of the thermistor array collected by the data collection unit, and converting the signals into laser parameters and damage position, size and other information by relying on laser inversion and damage monitoring algorithms, and displaying by the visualization software.

[0045] Further, the present application provides a preparation method of the flexible high-energy laser sensing thin film sensor, which comprises the following steps:

[0046] Step 1: flexible substrate 1 preparation: a 50 μm thick polyimide substrate is used, and the substrate is checked and cleaned to remove surface contaminants;

[0047] Step 2: preparing and patterning the lead layers on the upper and lower surfaces: a few microns thick lead film is deposited on the upper and lower surfaces of the flexible substrate 1 by using magnetron sputtering, electroplating or sputtering + electroplating two-step process; the pattern on the negative is transferred to the flexible substrate by using exposure and development and other steps, and etching and film stripping process is completed to form the lead pattern;

[0048] Step 3: depositing and patterning the transition layer and the thermistor layer: the upper surface transition layer 2, the upper surface thermistor layer 3, the lower surface transition layer 6 and the lower surface thermistor layer 7 are prepared on the upper and lower surfaces of the flexible substrate 1 by using evaporation, electroplating, screen printing and other processes, and are patterned; wherein the flexible substrate 1 is a polyimide film, the upper surface transition layer 2 and the lower surface transition layer 6 are Ti film, and the upper surface thermistor layer 3 and the lower surface thermistor layer 7 are Pt film; after the double-sided deposition of 30 nm Ti + 200 nm Pt film is completed by magnetron sputtering, the excess Ti + Pt film on the surface of the flexible substrate 1 is removed by using laser etching technology to form the linear resistance array on the upper and lower surfaces;

[0049] In another embodiment, the upper surface thermistor layer 3 and the lower surface thermistor layer 7 are prepared by using screen printing process to directly obtain the linear resistance array, and the subsequent patterning process of the upper surface thermistor layer 3 and the lower surface thermistor layer 7 can be omitted.

[0050] That is, the thermistor layer can be prepared by using evaporation, sputtering, screen printing and other processes; when the thermistor film is obtained by using evaporation and sputtering process, laser etching is used to remove the excess thermistor film material to realize the preparation of large-area sensing thin film on the flexible substrate; when the thermistor thick film is obtained by using screen printing process, the printing process can realize the patterning process at the same time.

[0051] Step 4: Surface coating protective layer: after the lead layer and thermistor layer processes are completed, the upper surface of the flexible substrate 1 is coated with an insulating upper surface protective layer 5, and the lower surface is coated with an insulating lower surface protective layer 9, exposing the electrical interface area; both protective layers are polyimide films, and after being attached, they are subjected to a pressing process;

[0052] Step 5: Electrical interface enhancement processing: adding a structural enhancement layer to the electrical interface part and performing gold plating at the exposed lead position to improve the structural and electrical reliability of the electrical interface;

[0053] It should be noted that in another specific implementation, the deposition in step 3 of the preparation method, the two transition layers, and the two thermistor layers can be completed before the two lead layers on the upper and lower surfaces are prepared and patterned in step 2, all of which can achieve the process goal of forming reliable electrical connections between the lead layers and the thermistor layers.

[0054] It should be noted that when laser irradiation is performed on one side of the thin film sensor, the laser thermal effect causes the temperature of the irradiated area of the thin film sensor to rise rapidly, which in turn causes the resistance of the linear resistor array in the thin film sensor to change. In a specific embodiment, by measuring the normalized change in array resistance on the upper and lower surfaces, the laser parameter inversion algorithm can obtain laser parameter information such as laser irradiation power, spot size, and irradiation center position.

[0055] Based on this, referring to Figure 5 , the signal processing unit is configured to receive the resistance value signals of each thermistor collected by the data acquisition unit, and to sense the power, spot size, and irradiation position of the laser irradiation in real time based on the resistance value changes of each thermistor. The method is specifically as follows:

[0056] S1: The multi-channel data acquisition circuit continuously acquires the resistance values of the linear resistor array on the upper surface thermistor layer 3 and the lower surface thermistor layer 7, thereby obtaining the resistance value reference when the laser is not irradiated;

[0057] S2: When the resistance value change of any one or more thermistors in the linear resistor array is greater than 1%, it is determined that the laser has started to irradiate;

[0058] S3: Select the normalized change of the row and column resistor arrays collected at any time after the laser starts to irradiate, such as 1 second later, and perform Gaussian fitting, the obtained Gaussian center position is the laser irradiation center position, and the obtained Gaussian distribution half-width is proportional to the laser spot size, thereby obtaining the laser spot size:

[0059] Laser spot diameter D = A x w, where A is a set proportionality coefficient, and w is the Gaussian distribution half-width;

[0060] S4: differentially processing the resistance values of the thermistors collected in the set time period to obtain resistance change rate data, selecting the maximum resistance change rate of all single thermistors on the row linear resistance array and the column linear resistance array during the laser irradiation process, and obtaining the laser power density by combining the maximum resistance change value with the relationship between the laser spot size and the laser power density;

[0061] laser power density wherein, is the maximum resistance change rate;

[0062] S5: when the resistance change rate of a single thermistor or multiple thermistors is less than 0, it is determined that the laser is turned off.

[0063] It should be noted that the thin film type laser sensing and damage monitoring integrated sensing system provided by the present application specifically monitors the laser irradiation perforation damage and the space debris impact perforation damage, and the specific method thereof is referred to Figure 5 When the laser power is too large or a high-energy object impacts to cause perforation damage of the thin film sensor, the upper and lower surface thermistor arrays in the thin film sensor are locally disconnected, causing a large mutation of a single or multiple array resistors. The damage abscissa and transverse size are determined by the disconnection position and number of the upper surface thermistor array, and the damage ordinate and longitudinal size are determined by the disconnection position and number of the lower surface thermistor array, so that the damage position and size information can be obtained in time. In order to improve the damage size monitoring accuracy, a single resistor in the array is composed of multiple equal-interval thin resistors in parallel, so that the number of broken thin resistors in parallel can be determined according to the resistance change value of the single resistor, and the damage size measurement accuracy is improved.

[0064] In a specific embodiment, the damage size monitoring accuracy is determined by the width and spacing of the parallel thin resistors that constitute a single thermistor. For a single thermistor composed of 10 thin resistors with a resistance of 1000Ω, a width of 20μm and a spacing of 20μm, when the perforation damage covers a size D (400μm>D>40μm) in the width direction of the single thermistor, the resistance R of the single thermistor changes from 1000Ω before damage to:

[0065]

[0066] Further, according to the collected damaged resistance R, the damage size monitoring resolution can be improved to 40μm. The damage monitoring level of the thin film sensor is greatly improved.

[0067] In summary, the application provides a thin film type laser sensing and damage monitoring integrated sensing system, which comprises a flexible thin film sensor, a data acquisition unit, a signal processing unit and a visualization software. The flexible thin film sensor for detecting laser irradiation and perforation damage comprises a flexible substrate and a transition layer, a thermistor layer, a lead layer and a protective layer prepared on the upper and lower surfaces of the flexible substrate, wherein the thermistor layer is arranged in a linear resistance array, and the upper and lower surface resistance array arrangement directions are 90 degrees to each other. The data acquisition unit is used for realizing rapid acquisition of the resistance value of the sensing thin film thermistor, and comprises a power supply, a signal conditioning circuit, an analog-to-digital conversion circuit and an FPGA circuit; the signal processing unit is used for receiving the acquired resistance value signal and converting the signal into laser parameters and damage position, size and other information by relying on laser inversion and damage monitoring algorithms, and displaying by the visualization software; that is, the application adopts a flexible thin film as the substrate, prepares a thermistor layer on the upper and lower surfaces and patterns it into a linear resistance array arranged in rows and columns, so as to realize accurate sensing of laser power density, spot size, irradiation position and other parameters, and rapid and accurate sensing of the position and size of impact damage such as small space debris; at the same time, the sensor has the advantages of flexibility, large-area arrangement and low cost, so that it is suitable for safety protection of the surface of a spacecraft such as a satellite, and has the health monitoring function of high-precision damage position and size sensing, and has important application prospects in the field of satellite safety and the like.

[0068] Of course, the application can have other various embodiments, and those skilled in the art can certainly make various corresponding changes and modifications according to the application without departing from the spirit and essence of the application. However, these corresponding changes and modifications should all belong to the protection scope of the claims attached to the application.

Claims

1. A thin-film laser sensing and damage monitoring integrated sensing system, characterized in that: It includes a flexible film sensor, a data acquisition unit, and a signal processing unit; The flexible film sensor is used to receive laser irradiation or space debris impact, wherein the resistance value of the thermistor on the flexible film sensor is related to the power of the laser irradiation, the laser spot size, the laser irradiation position, and the space debris impact position; The data acquisition unit is used to collect the resistance signal of each thermistor on the flexible film sensor in real time; The signal processing unit is used to receive the resistance signals of each thermistor collected by the data acquisition unit, and to sense the power, laser spot size, and laser irradiation position of the laser irradiation in real time according to the resistance change of each thermistor, and to obtain damage location and size information when the flexible film sensor is perforated by laser irradiation or impacted by space debris; The flexible thin film sensor comprises a flexible substrate (1), an upper surface transition layer (2), a lower surface transition layer (6), an upper surface thermistor layer (3), a lower surface thermistor layer (7), an upper surface lead layer (4), a lower surface lead layer (8), an upper surface protective layer (5), and a lower surface protective layer (9); wherein the upper surface transition layer (2), the upper surface thermistor layer (3), the upper surface lead layer (4), and the upper surface protective layer (5) are sequentially covered on the upper surface of the flexible substrate (1), and the lower surface transition layer (6), the lower surface thermistor layer (7), the lower surface lead layer (8), and the lower surface protective layer (9) are sequentially covered on the lower surface of the flexible substrate (1); The linear resistor array arranged on the upper surface thermistor layer (3) and the linear resistor array arranged on the lower surface thermistor layer (7) are arranged in a direction orthogonal to each other; A single thermistor in the linear resistor array constituting the upper surface thermistor layer (3) and the lower surface thermistor layer (7) is a strip structure with a width of 60 μm to 6 mm, and the thermistor spacing of the resistor array is 20 μm to 2 mm, wherein the length covers the entire sensing area of ​​the flexible film sensor; The width direction of a single thermistor is composed of multiple thin thermistor strips connected in parallel, and the parallel nodes are located at the two ends of the thermistor in the length direction. The multiple thin thermistor strips that make up a single thermistor are arranged in an array with equal spacing. The width and spacing of a single resistance strip are 20μm~2mm, and the number of parallel strips is 2~20.

2. A thin-film laser sensing and damage monitoring integrated sensor system according to claim 1, characterized in that: The flexible substrate (1) is a flexible film or foil with a thickness between 10 μm and 500 μm; When the flexible substrate (1) is an insulating flexible film or foil, the materials of the upper surface transition layer (2) and the lower surface transition layer (6) are Ti, Cr, and Ta; when the flexible substrate (1) is a conductive film or foil, the upper surface transition layer (2) and the lower surface transition layer (6) are a combination of multilayer films, wherein the structure of the multilayer film includes an alloy film, an Al2O3 insulating layer, and an adhesive layer prepared on the surface of the Al2O3 insulating layer.

3. The thin-film laser sensing and damage monitoring integrated sensor system according to claim 1, characterized in that: The thickness of the thermistor layer is between 100 nm and 20 μm, and the material is one of Pt, Ni, and NiCr thermistor films that have good resistance temperature coefficient and linearity in a wide temperature range.

4. The thin-film laser sensing and damage monitoring integrated sensor system according to claim 1, characterized in that: The upper surface lead layer (4) and the lower surface lead layer (8) each include a plurality of leads separated from each other. The upper surface lead layer (4) and the lower surface lead layer (8) are respectively used to form electrical contact with the upper surface thermistor layer (3) and the lower surface thermistor layer (7) and provide an electrical interface for sensor measurement. One end of each thermistor strip in the linear resistor array is respectively connected to a single lead to form electrical contact, and the other end of the thermistor strip is a lead shared by multiple thermistor strips.

5. The thin-film laser sensing and damage monitoring integrated sensor system according to claim 1, characterized in that: The upper surface protection layer (5) and the lower surface protection layer (9) are polyimide films or oxide / nitride ceramic films.

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