Hbc solar cell structure and its non-amorphous damage-free preparation method

By employing a process of TCO layer + i:a-Si mask layer + laser oxidation and selective etching cleaning, the problem of easy damage to the amorphous interdigitated structure in HBC solar cell fabrication was solved, improving cell efficiency and simplifying the production process, thus achieving high-efficiency and low-damage HBC solar cell fabrication.

CN119767855BActive Publication Date: 2026-02-17CHANGZHOU BITAI TECH
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Patent Information

Application Number
CN202411958128.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-30
Publication Date
2026-02-17
Estimated Expiration
2044-12-30

AI Technical Summary

Technical Problem

In the existing HBC solar cell manufacturing process, the amorphous interdigitated structure of the N and P regions on the back side is easily damaged, leading to a decrease in cell efficiency. Furthermore, the manufacturing process is complex, costly, and difficult to achieve efficient production.

Method used

The process of using a TCO layer + i:a-Si mask layer + laser oxidation and selective etching cleaning protects the TCO layer in the N and P regions, avoiding direct contact between amorphous silicon and acid/alkali. By using a patterned silicon oxide mask and selective etching, an isolated interdigitated structure is formed, simplifying the fabrication process.

Benefits of technology

It improves the upper limit of battery efficiency, overcomes the problem of matching the work function of the N-region and P-region on the back of traditional HBC batteries with the TCO, increases the current and fill factor, reduces the risk of damage, and simplifies the production process.

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Abstract

The application belongs to the technical field of crystalline silicon solar cells, and particularly relates to an HBC solar cell structure and a non-amorphous damage preparation method thereof, which comprises the following steps: step S1, polishing both sides of a silicon wafer; step S2, depositing an i:a-Si layer, a P:a-Si layer, a high work function TCO layer and an i:a-Si mask layer on the back of the silicon wafer from top to bottom; step S3, laser oxidizing the P area of the back of the silicon wafer; step S4, wet cleaning the back of the silicon wafer; step S5, depositing an i:a-Si layer, an N:a-Si layer, a low work function TCO layer and an i:a-Si mask layer on the back of the silicon wafer from top to bottom; step S6, laser oxidizing the N area of the back of the silicon wafer; step S7, cleaning the back of the silicon wafer and texturing the front of the silicon wafer; step S8, preparing an aluminum oxide layer and a silicon nitride layer on the front and back of the silicon wafer, and filling an isolation area of an isolation interdigital arrangement structure; step S9, laser opening a mask on the back of the silicon wafer; and step S10, printing metal paste in a windowed area to complete the preparation of the solar cell.
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