Touch panel display

Abstract

A touch panel display is provided with a touch sensor including a first sensor electrode and a second sensor electrode, a display unit which overlaps the touch sensor and in which a plurality of pixels are arranged, a drive circuit which drives the touch sensor and the display unit, and a first transparent insulating layer which covers the touch sensor. A second transparent insulating layer provided between the touch sensor and the display unit; a first inorganic insulating layer sandwiched between the touch sensor, the display unit, and the drive circuit and facing the first transparent insulating layer; wherein the first sensor electrode is formed by arranging a plurality of diamond electrode patterns in a first direction and electrically connecting the diamond electrode patterns, and the second sensor electrode is formed by arranging a plurality of diamond electrode patterns in a second direction crossing the first direction and electrically connecting the diamond electrode patterns. The first sensor electrode and the second sensor electrode are electrically connected to a lead-out wiring through a contact hole penetrating through the second transparent insulating layer, and the contact hole is sandwiched between the first transparent insulating layer and the first inorganic insulating layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based upon and claims the benefit of priority from prior Japanese Patent Application No. 2018-079903, filed on April 18, 2018, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One embodiment of the present invention relates to a touch panel display (also referred to as a display device with a touch detection function) and a manufacturing method thereof, for example, to a display device that uses an organic electroluminescent element as a display element and has a built-in touch sensor. Background Art

[0004] A so-called in-cell touch panel display is disclosed, which uses a liquid crystal display element as a display element, and in the liquid crystal display panel, a common electrode of the liquid crystal display element and an electrostatic capacitive touch detection electrode are integrated (for example, refer to Japanese Patent Publication No. 2012-073783).

[0005] The existing touch panel display is made of glass substrate, so even if the embedded method is adopted, there is a limit to its thinning. In addition, as long as the glass substrate is used, there is a problem that a display with flexibility (so-called flexible display) cannot be realized. Summary of the invention

[0006] A touch panel display involved in one embodiment of the present invention has the following structure, wherein the touch panel display has: a transparent resin substrate; a touch sensor embedded in the transparent resin substrate; pixels including transistors and organic electroluminescent elements electrically connected to the transistors; a display unit in which pixels are arranged; and a shielding electrode arranged between the touch sensor and the display unit; and the pixels emit light toward the transparent resin substrate side.

[0007] A touch panel display according to one embodiment of the present invention comprises: a display unit provided with image signal lines and scanning signal lines; a touch sensor provided with a first sensor electrode (receiver electrode) and a second sensor electrode (transmitter electrode); and a driving circuit arranged outside the display unit and the touch sensor. The driving circuit comprises: an image signal driving circuit outputting an image signal to the image signal line; a scanning signal line driving circuit outputting a timing signal synchronized with the image signal to the scanning signal line; a sensing circuit receiving a detection signal output from the first sensor electrode (receiver electrode) and outputting a sensing signal; and a scanning circuit outputting a driving signal to the second sensor electrode (transmitter electrode). The driving circuit integrates the image signal driving circuit, the scanning signal driving circuit, the sensing circuit, and the scanning circuit.

[0008] A manufacturing method for a touch panel display involved in one embodiment of the present invention includes: forming a transparent resin substrate including a touch sensor, the touch sensor is composed of a first sensor electrode extending in a first direction and a second sensor electrode extending in a second direction intersecting the first direction, forming a shielding electrode covering the touch sensor, and forming a display portion with pixels arranged on the transparent resin substrate, the pixels including transistors and organic electroluminescent elements electrically connected to the transistors. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 This is a plan view for explaining the structure of a touch panel display according to one embodiment of the present invention.

[0010] Figure 2 This is a perspective view for explaining the structure of a touch panel display according to one embodiment of the present invention.

[0011] Figure 3 This is a diagram showing an example of an equivalent circuit of a pixel of a touch panel display according to an embodiment of the present invention.

[0012] Figure 4 It is a plan view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0013] Figure 5A and Figure 5B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0014] Figure 6 It is a plan view showing the structure of a touch sensor provided in a touch panel display according to an embodiment of the present invention.

[0015] Figure 7 It is a plan view showing the structure of a touch sensor provided in a touch panel display according to an embodiment of the present invention.

[0016] Figure 8 It is a plan view showing the structure of a touch sensor provided in a touch panel display according to an embodiment of the present invention.

[0017] Fig. 9 It is a diagram showing a schematic cross-sectional structure of a touch panel display according to one embodiment of the present invention.

[0018] Fig. 10A and Fig. 10B It is a diagram showing a cross-sectional structure of a pixel of a touch panel display according to an embodiment of the present invention and describing a manufacturing method.

[0019] Fig.11A and11B It is a diagram showing a cross-sectional structure of a pixel of a touch panel display according to an embodiment of the present invention and describing a manufacturing method.

[0020] Figures 12A to 12E The diagrams are for explaining a method for manufacturing pixels of a touch panel display according to an embodiment of the present invention, and are diagrams showing a patterning step using a multi-tone exposure method.

[0021] Fig.13A and Fig. 13B The diagram shows a cross-sectional structure of a pixel of a touch panel display according to an embodiment of the present invention and explains a manufacturing method.

[0022] Fig.14A and Fig. 14B The diagram shows a cross-sectional structure of a pixel of a touch panel display according to an embodiment of the present invention and explains a manufacturing method.

[0023] Fig.15A and Fig. 15B The diagram shows a cross-sectional structure of a pixel of a touch panel display according to an embodiment of the present invention and explains a manufacturing method.

[0024] Fig.16A and Fig. 16B The diagram shows a cross-sectional structure of a pixel of a touch panel display according to an embodiment of the present invention and explains a manufacturing method.

[0025] Fig.17 It is a plan view showing a mode of manufacturing a plurality of display panels on a supporting substrate in a manufacturing process of a touch panel display according to an embodiment of the present invention.

[0026] Fig.18 This is a diagram showing an example of an equivalent circuit of a pixel of a touch panel display according to an embodiment of the present invention.

[0027] Fig.19 It is a plan view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0028] Fig. 20A and Fig. 20B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0029] Fig.21 This is a diagram showing an example of an equivalent circuit of a pixel of a touch panel display according to an embodiment of the present invention.

[0030] Fig. 22It is a plan view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0031] Fig.23A and Fig. 23B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0032] Fig.24 This is a diagram showing an example of an equivalent circuit of a pixel of a touch panel display according to an embodiment of the present invention.

[0033] Fig.25 It is a plan view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0034] Fig.26A and Fig.26B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0035] Fig. 27 It is a plan view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0036] Fig.28A and Fig.28B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0037] 29 is a cross-sectional view showing the structure of a pixel of a touch panel display according to an embodiment of the present invention.

[0038] Fig.30 It is a plan view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0039] Fig.31A and 31B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0040] Fig.32 It is a plan view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0041] Fig.33A and Fig.33B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0042] Fig.34 It is a plan view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0043] Fig.35A and Fig.35B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0044] Fig.36 It is a plan view showing an electrode structure of a touch sensor embedded in a touch panel display according to an embodiment of the present invention.

[0045] Fig.37A and Fig.37B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0046] Fig.38A and Fig.38B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0047] Fig.39A and Fig.39B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0048] Fig.40A and Fig.40B It is a cross-sectional view showing the structure of a pixel of a touch panel display according to one embodiment of the present invention.

[0049] Fig.41A and Fig.41B It is a plan view showing an example of sensor electrodes of a touch panel display according to an embodiment of the present invention.

[0050] Fig.42A and Fig.42B It is a plan view showing an example of sensor electrodes of a touch panel display according to an embodiment of the present invention.

[0051] Fig.43A and Fig.43B It is a plan view showing an example of sensor electrodes of a touch panel display according to an embodiment of the present invention.

[0052] Fig.44A and Fig.44B It is a plan view showing an example of sensor electrodes of a touch panel display according to an embodiment of the present invention.

[0053] Fig.45A and Fig.45B It is a plan view showing an example of sensor electrodes of a touch panel display according to an embodiment of the present invention.

[0054] Fig.46A and Fig.46BIt is a plan view showing an example of sensor electrodes of a touch panel display according to an embodiment of the present invention.

[0055] Fig.47A and Fig.47B This is a cross-sectional view showing an example of a connection structure between sensor electrodes and lead wirings of a touch panel display according to an embodiment of the present invention.

[0056] Fig.48A and Fig.48B This is a cross-sectional view showing an example of a connection structure between sensor electrodes and lead wirings of a touch panel display according to an embodiment of the present invention.

[0057] Fig.49 This is a cross-sectional view showing an example of a connection structure between sensor electrodes and lead wirings of a touch panel display according to an embodiment of the present invention. DETAILED DESCRIPTION

[0058] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings, etc. However, the present invention includes a variety of different forms and is not limited to the following embodiments. The drawings attached to this specification are sometimes schematically displayed, compared with the actual form, for the purpose of making the description clearer, of the width, thickness, shape, etc. of each part, but they are only examples and do not necessarily limit the content of the present invention. In addition, in the present invention, when a specific element recorded in a certain figure is in the same or corresponding relationship with a specific element recorded in other figures, the same symbol is sometimes marked (or a symbol obtained by marking a, b, etc. after the number recorded as the symbol), and repeated descriptions are appropriately omitted. Furthermore, the words "1st" and "2nd" marked on each element are convenient marks used to distinguish each element, and do not have further meaning unless otherwise specified.

[0059] In this specification, when a certain component or region is located "above (or below)" another component or region, unless otherwise specified, it includes not only the case where it is located directly above (or directly below) another component or region, but also the case where it is located above (or below) another component or region. That is, it also includes the case where another component is included between the above (or below) another component or region and the certain component or region.

[0060] First embodiment:

[0061] This embodiment describes a touch panel display having a touch sensor function for detecting a touch on a screen and a display function for displaying an image on the screen.

[0062] 1-1. Configuration of display device

[0063] Figure 1FIG. 2 shows a configuration of a touch panel display 100 according to an embodiment of the present invention. The touch panel display 100 includes a display unit 102, a drive circuit unit 104, a terminal unit 106, and a touch sensor 108 on a first surface of a transparent resin substrate 124. The display unit 102 includes a plurality of pixels 110. The plurality of pixels 110 are arranged in a first direction (e.g., Figure 1 ), and a second direction intersecting the first direction (eg Figure 1 The arrangement of the plurality of pixels 110 is arbitrary, for example, a stripe arrangement, a triangle arrangement, a Bayer arrangement, a PenTile arrangement, a diamond PenTile arrangement, and other arrangements are applicable.

[0064] The touch sensor 108 includes a first sensor electrode 114 and a second sensor electrode 116. The first sensor electrode 114 is formed in a pattern extending in a first direction. The second sensor electrode 116 is formed in a pattern extending in a second direction intersecting the first direction. The patterns of the first sensor electrode 114 and the second sensor electrode 116 are arbitrary, for example, they may also have a flat plate (strip) pattern. The first sensor electrode 114 and the second sensor electrode 116 are arranged in plurality. The first sensor electrode 114 is arranged in plurality in the second direction, and the second sensor electrode 116 is arranged in plurality in the first direction. The first sensor electrode 114 and the second sensor electrode 116 are arranged in a manner intersecting with an insulating layer.

[0065] The terminal portion 106 includes a plurality of terminal electrodes 118 disposed along one side of the transparent resin substrate 124. The plurality of terminal electrodes 118 are terminals that are electrically connected to the flexible printed wiring board 122 and input signals from an external circuit.

[0066] The driving circuit unit 104 includes a first driving circuit 112a, a second driving circuit 112b, and a third driving circuit 112c. The configuration of the first driving circuit 112a, the second driving circuit 112b, and the third driving circuit 112c is arbitrary. For example, the first driving circuit 112a and the third driving circuit 112c can also be formed on a transparent resin substrate 124 using a thin film transistor (TFT: Thin Film Transistor), and the second driving circuit 112b is formed by a semiconductor integrated circuit (LSI: Large Scale Integrated circuit) and is mounted on a flexible printed circuit board 122 in the form of a bare chip. The semiconductor integrated circuit mounted on the flexible printed circuit board 122 is also called a driving IC. The second driving circuit 112b can also be integrated with an image signal processing circuit 113 that outputs image signals to a plurality of pixels 110 and a sensor signal processing circuit 115 that processes the signal of the touch sensor 108. As a result, the installation cost can be reduced.

[0067] The display unit 102 and the touch sensor 108 are configured to overlap partially or completely. The display unit 102 displays images or videos, and the touch sensor 108 has a function of detecting contact or proximity of a human finger or the like. The touch sensor 108 detects operation of a graphical user interface (GUI) such as icons and buttons displayed on the display unit 102.

[0068] The touch sensor 108 has a function of detecting contact or proximity of a human finger or the like by using a change in electrostatic capacitance. The first sensor electrode 114 is a receiver electrode (Rx electrode) and sequentially outputs a detection signal (Vdet). The second sensor electrode 116 is a transmitter electrode (Tx electrode) and sequentially receives a common drive signal (Vcom) from the third drive circuit 112c.

[0069] The touch panel display 100 performs input and output functions by displaying an image on the display unit 102 and detecting a touch on the screen by the touch sensor 108. The display unit 102 is driven by a scanning signal output by the first drive circuit 112a and an image signal output by the second drive circuit 112b. The touch sensor 108 is driven by a detection signal input to the first sensor electrode 114 via the terminal electrode 118 and a common drive signal supplied to the second sensor electrode 116 by the third drive circuit 112c. A graphical user interface (GUI) such as an icon is displayed on the display unit 102, and the touch sensor 108 detects a touch on the screen, thereby determining whether the GUI is operated.

[0070] Figure 2 1 shows a stereoscopic diagram for explaining the structure of the touch panel display 100. The touch panel display 100 has a transparent resin substrate 124 in which a first sensor electrode 114 and a second sensor electrode 116 are embedded. The touch sensor 108 is formed by the first sensor electrode 114 and the second sensor electrode 116. On the transparent resin substrate 124, a display unit 102 in which pixels 110 are arranged, a drive circuit unit 104, a terminal unit 106 in which terminal electrodes 118 are arranged, and the like are provided. In addition, the transparent resin substrate 124 includes a shielding electrode 126. The shielding electrode 126 is provided between the first sensor electrode 114 and the second sensor electrode 116 and the display unit 102. A sealing layer 128 may also be provided on the display unit 102. The sealing layer 128 is provided to protect the display unit 102 and the drive circuit unit 104. The first sensor electrode 114 and the second sensor electrode 116 embedded in the transparent resin substrate 124 are electrically connected to the terminal electrode 118 via contact holes formed in the transparent resin substrate 124 .

[0071] The pixel 110 includes a light-emitting element. As the light-emitting element, for example, an organic electroluminescent element (hereinafter also referred to as an "organic EL element") is used. The touch panel display 100 has a so-called bottom emission structure in which the light emitted by the pixel 110 is emitted through a transparent resin substrate 124. Therefore, the transparent resin substrate 124 is light-transmitting. The first sensor electrode 114, the second sensor electrode 116, and the shielding electrode 126 are arranged to overlap with the pixel 110, so these electrodes are all light-transmitting. For example, the first sensor electrode 114, the second sensor electrode 116, and the shielding electrode 126 are respectively formed of a transparent conductive film. As Figure 2 As shown, the touch panel display 100 has a configuration in which an image displayed on the display unit 102 is visible from the transparent resin substrate 124 side. That is, the touch panel display 100 has a configuration in which an image displayed on the display unit 102 is visible through the touch sensor 108 .

[0072] The sealing layer 128 may be formed of any material. For example, the sealing layer 128 may be formed of an inorganic insulating film such as a silicon oxide film or a silicon nitride film. In addition, the sealing layer 128 may be formed of a resin material such as a polyimide resin, an acrylic resin, or an epoxy resin. The sealing layer 128 is provided to prevent degradation of the light-emitting element provided in the pixel 110.

[0073] 1-2. Pixel Equivalent Circuit

[0074] Figure 3 An example of an equivalent circuit of a pixel 110a is shown. The pixel 110a includes an organic EL element 134, a selection transistor 136, a drive transistor 138, and a capacitor 140. The selection transistor 136 and the drive transistor 138 have a double-gate structure in which a semiconductor layer (or also referred to as an "active layer") is sandwiched between two gate electrodes. The drive transistor 138 has a first gate electrode 154 and a second gate electrode 166, and the selection transistor 136 has a first gate electrode 156 and a second gate electrode 168.

[0075] The selection transistor 136 and the driving transistor 138 are insulated gate field effect transistors, wherein the source and the drain are signal input and output terminals, and the gate is a control terminal for controlling the transistor to be turned on and off. Figure 3 In the equivalent circuit shown, the selection transistor 136 and the driving transistor 138 are n-channel transistors.

[0076] The control terminal (first gate electrode 156 and second gate electrode 168) of the selection transistor 136 is electrically connected to the gate signal line 142a. One of the input / output terminals (first terminal) of the selection transistor 136 is electrically connected to the data signal line 144, and the other of the input / output terminals (second terminal) is electrically connected to the control terminal (first gate electrode 154 and second gate electrode 166) of the driving transistor 138. One of the input / output terminals (first terminal: source) of the driving transistor 138 is electrically connected to the common wiring 146 (146a, 146b, 146c), and the other of the input / output terminals (second terminal: drain) is electrically connected to one of the terminals (first terminal) of the organic EL element 134. One of the terminals (first terminal) of the capacitor 140 is electrically connected to the control terminal (first gate electrode 154 and second gate electrode 166) of the driving transistor 138, and the other of the terminals (second terminal) is electrically connected to the common wiring 146 (146a, 146b, 146c). The other terminal (second terminal) of the organic EL element 134 is electrically connected to a power supply line 148 .

[0077] The first common wiring 146a, the second common wiring 146b, and the third common wiring 146c are given a fixed potential (for example, a ground potential). The power supply line 148 is given a power supply potential VDD having a higher potential than the common wiring 146. One terminal (the first terminal) of the organic EL element 134 is a cathode, and the other terminal (the second terminal) is an anode. If a voltage higher than a threshold voltage is applied to the control terminal of the driving transistor 138, the organic EL element 134 connected between the power supply line 148 and the common wiring 146 is energized. The organic EL element 134 controls the light emission intensity according to the drain current of the driving transistor 138.

[0078] 1-3. Pixel structure

[0079] Figure 4 Representation and Figure 3 An example of a planar structure of a pixel 110 a corresponding to the equivalent circuit shown. Figure 5A Representation and Figure 4 The cross-sectional structure of the pixel 110 a corresponding to the line A1 - A2 is shown. Figure 5B Representation and Figure 4 The cross-sectional structure of the pixel 110 a corresponding to the line B1 - B2 is shown. Figure 5A 1 shows a cross-sectional structure of the selection transistor 136 and the capacitor 140. Figure 5B 1 and 13 show the cross-sectional structure of the driving transistor 138 and the organic EL element 134. In the following description, reference is made to Figure 4 , Figure 5A and Figure 5B In addition, Figure 4In the plan view of the pixel 110 a shown in FIG. 1 , the structures of the first sensor electrode 114 , the second sensor electrode 116 , and the organic EL element 134 are omitted.

[0080] like Figure 4 As shown, the pixel 110a is provided with a driving transistor 138, a selection transistor 136, and a capacitor 140. In addition, the pixel 110a is provided with a gate signal line 142, a data signal line 144, and a common line 146 connected to the plurality of elements.

[0081] like Figure 5A and Figure 5B As shown in FIG. 1 , the first sensor electrode 114 and the second sensor electrode 116 are embedded in the transparent resin substrate 124. The touch sensor 108 is formed by the first sensor electrode 114 and the second sensor electrode 116. A driving transistor 138, a selection transistor 136, a capacitor 140, and an organic EL element 134 are provided on the transparent resin substrate 124. A shielding electrode 126 is arranged between the first sensor electrode 114 and the second sensor electrode 116, and the driving transistor 138, the selection transistor 136, the capacitor 140, and the organic EL element 134.

[0082] The second sensor electrode 116 is provided with an opening 119 in a region overlapping with the first gate electrode 154. The second sensor electrode 116 is applied with a common drive signal (Vcom) as a transmitter electrode (Tx electrode). The second sensor electrode 116 and the first gate electrode 154 are separated only by the third transparent resin layer 150c, and the two are arranged relatively close to each other. In this case, when the first gate electrode 154 is in a floating state, if a drive signal is applied to the second sensor electrode 116, the electric field generated by the drive signal acts on the first gate electrode 154, and the operation of the driving transistor 138 becomes unstable, and there is a possibility of malfunction. In order to make the first gate electrode 154 away from the second sensor electrode 116, the film thickness of the fourth transparent resin layer 150c is preferably larger. For example, the fourth transparent resin layer 150c is provided with a film thickness of 10 μm or more, preferably 15 μm or more. Furthermore, the second sensor electrode 116 is preferably provided with an opening 119. By providing the opening 119 in the second sensor electrode 116 , it is possible to prevent the common drive signal (Vcom) from affecting the first gate electrode 154 .

[0083] On the other hand, in the area where the selection transistor 136 is configured, the second sensor electrode 116 preferably covers the first gate electrode 156. A scanning signal is applied to the first gate electrode 156 from the gate signal line 142a. The scanning signal applies a signal voltage of at least two values, a voltage that turns the selection transistor 136 into an on state and a voltage that turns it into an off state. The second sensor electrode 116 is configured to overlap with the first gate electrode 156, thereby shielding the electric field generated by the signal voltage. With such a structure, the signal voltage applied to the first gate electrode 156 can be prevented from acting on the first sensor electrode 114. As a result, the operation of the touch sensor is stabilized and malfunction can be prevented.

[0084] 1-3-1. Transparent resin substrate

[0085] The transparent resin substrate 124 has a structure in which a plurality of transparent resin layers are stacked. The first sensor electrode 114 and the second sensor electrode 116 are sandwiched between the plurality of transparent resin layers 150. For example, Figure 5A and Figure 5B As shown in FIG. 1 , the first sensor electrode 114 is provided between the first transparent resin layer 150a and the second transparent resin layer 150b. In addition, the second sensor electrode 116 is provided between the second transparent resin layer 150b and the third transparent resin layer 150c. In this way, the transparent resin substrate 124 is formed by a plurality of transparent resin layers 150, so that the first sensor electrode 114 and the second sensor electrode 116 can be embedded in the substrate.

[0086] The transparent resin substrate 124 further includes a shielding electrode 126 disposed on the upper surface of the third transparent resin layer 150c. The shielding electrode 126 is disposed in a manner extending to substantially the entire surface of the pixel 110a. In addition, in the present embodiment, the shielding electrode 126 is provided with a first opening 152a in a region overlapping with the driving transistor 138, and a second opening 152b in a region overlapping with the selection transistor 136. The shielding electrode 126 is given a fixed potential. For example, the shielding electrode 126 is given a ground potential. By providing the first opening 152a and the second opening 152b in the shielding electrode 126, the potential of the shielding electrode 126 can be prevented from directly acting on the gate of the transistor.

[0087] The shielding electrode 126 has light-transmitting properties. For example, the shielding electrode 126 is formed of a transparent conductive film. As the transparent conductive film, conductive metal oxides such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), titanium nitride (TiN x) A conductive transparent conductive film such as a metal nitride such as titanium oxynitride (TiON) or a metal nitride oxide, a conductive organic material such as polyaniline and graphene. In addition, the shielding electrode 126 may be formed of a metal material such as aluminum, titanium, copper, etc., and may have a structure in which an opening is provided in a manner corresponding to the pixel configuration to allow light to pass therethrough.

[0088] A fourth transparent resin layer 150d is provided on the shielding electrode 126. The fourth transparent resin layer 150d forms an insulating surface of the transparent resin substrate 124. The fourth transparent resin layer 150d preferably has a flat surface so that elements such as transistors constituting the pixel 110a can be provided on the upper layer side.

[0089] The transparent resin substrate 124 is formed of a resin material and thus has flexibility. As the resin material, transparent polyimide resin, transparent polyethylene naphthalate resin, transparent para-type polyamide resin, etc. can be used. Transparent polyimide resin and transparent polyethylene naphthalate resin have poor gas barrier properties compared to glass substrates, so a gas barrier film formed of a silicon nitride film or the like can also be further provided. On the other hand, transparent para-type polyamide resin has transparency, heat resistance, and gas barrier properties, so it can be suitable for use as a transparent resin layer 150. The first transparent resin layer 150a, the second transparent resin layer 150b, the third transparent resin layer 150c, and the fourth transparent resin layer 150d can be formed of the same resin material, respectively, or at least a portion of the layers or all of the layers can be formed of different resin materials. The transparent resin substrate 124 can be provided with electrodes for a touch sensor inside by stacking a plurality of transparent resin layers.

[0090] The transparent resin substrate 124 preferably has a heat resistance of 150°C to 400°C. For example, when the maximum process temperature (heating temperature) when manufacturing the pixel 110a is below 250°C, a para-polyamide resin can be used as the resin material. By using a para-polyamide resin, the transparent resin substrate 124 can improve the gas barrier properties. On the other hand, when the maximum process temperature (heating temperature) when manufacturing the pixel 110a is above 250°C, from the perspective of heat resistance, a transparent polyimide resin is preferably used.

[0091] In addition, cellulose nanofibers (CNF) may be mixed with transparent polyimide resins and transparent para-polyamide resins. By mixing cellulose nanofibers (CNF) with transparent polyimide resins and transparent para-polyamide resins, there are advantages such as improved rigidity, suppressed shrinkage, and improved dimensional stability. In order to enjoy these advantages, cellulose nanofibers (CNF) may be mixed with any of the first transparent resin layer 150a, the second transparent resin layer 150b, the third transparent resin layer 150c, and the fourth transparent resin layer 150d. The mixing ratio of cellulose nanofibers (CNF) is preferably 1% to 10% by weight.

[0092] The first transparent resin layer 150a, the second transparent resin layer 150b, the third transparent resin layer 150c, and the fourth transparent resin layer 150d preferably have a thickness of 3 μm to 10 μm in order to realize the function as a structure for maintaining the shape of the transparent resin substrate 124 and the function as a planarization film for burying the first sensor electrode 114 and the second sensor electrode 116.

[0093] As described above, the touch panel display 100 according to the present embodiment can be made thinner and lighter by embedding the electrodes of the touch sensor 108 in the transparent resin substrate 124 .

[0094] Figure 6 The arrangement of the first sensor electrode 114 and the second sensor electrode 116 constituting the touch sensor 108 is shown in a plan view. Figure 6 The second sensor electrode 116 is formed by a flat (belt-shaped) conductive pattern extending in the Y direction shown in FIG. Figure 6 The first sensor electrode 114 is formed by a flat (strip-shaped) conductive pattern extending in the X direction shown. A plurality of first sensor electrodes 114 are arranged in the X direction, and a plurality of second sensor electrodes 116 are arranged in the Y direction. The plurality of first sensor electrodes 114 and the plurality of second sensor electrodes 116 are arranged crosswise via the second transparent resin layer 150b. The first sensor electrode 114 and the second sensor electrode 116 are arranged on the side of the light emitting surface in the pixel 110a, and are therefore formed by a transparent conductive film. The first sensor electrode 114 and the second sensor electrode 116 are arranged via the second transparent resin layer 150b. The second transparent resin layer 150b acts as a dielectric film, and an electrostatic capacitance is formed between the first sensor electrode 114 and the second sensor electrode 116.

[0095] The first sensor electrode 114 is given a detection signal (Vdet) and used as a receiver electrode (Rx electrode), and the second sensor electrode 116 is given a common drive signal (Vcom) and used as a transmitter electrode (Tx electrode). On the transparent resin substrate 124, the touch sensor 108 is formed by the first sensor electrode 114 and the second sensor electrode 116. When a human finger or the like touches or approaches, the electrostatic capacitance of the touch sensor 108 changes. On the transparent resin substrate 124, the touch sensor 108 utilizing this characteristic is formed.

[0096] The first sensor electrode 114 and the second sensor electrode 116 are arranged over a part or the whole of the display unit 102. The first sensor electrode 114 and the second sensor electrode 116 are light-transmissive. For example, the first sensor electrode 114 and the second sensor electrode 116 are formed of a transparent conductive film. As the transparent conductive film, a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), a conductive transparent conductive film such as a metal nitride or metal nitride oxide such as titanium nitride (TiNx), titanium oxynitride (TiON), or a conductive organic substance such as polyaniline and graphene are used. In addition, the first sensor electrode 114 and the second sensor electrode 116 may also have a structure in which an opening is provided in a manner that allows light to pass therethrough corresponding to the configuration of the pixel 110a.

[0097] The number of the first sensor electrodes 114 and the second sensor electrodes 116 is arbitrary. For example, the first sensor electrodes 114 and the second sensor electrodes 116 only need to be able to identify the contact range of a human fingertip, and the number of the first sensor electrodes 114 and the second sensor electrodes 116 is much less than the number of pixels 110a arranged. For example, when the area (screen size) of the display unit 102 is 5 inches, the length of the diagonal of the display unit 102 is 125 mm. In this case, for example, 1080×1920 pixels can be arranged. In contrast, the first sensor electrodes 114 can be configured with 12 electrodes (5 mm pitch, electrode width 1.0 mm to 1.5 mm) or 25 electrodes (2.5 mm pitch, electrode width 0.5 mm to 0.7 mm). In addition, the second sensor electrodes 116 are configured with 22 electrodes (5 mm pitch, electrode width 4.9 mm) or 45 electrodes (2.5 mm pitch, electrode width 2.4 mm).

[0098] 1-3-2. Circuit element structure

[0099] like Figure 5A and Figure 5B As shown, a driving transistor 138, a selection transistor 136, a capacitor 140, and an organic EL element 134 are provided on a transparent resin substrate 124. In this embodiment, the driving transistor 138 and the selection transistor 136 have a double-gate structure, and the organic EL element 134 has a so-called reverse stacked structure in which an organic electroluminescent layer is stacked from the cathode side.

[0100] 1-3-2-1. Driver transistor

[0101] The driving transistor 138 has a structure in which a first gate electrode 154, a first insulating layer 158, a first oxide semiconductor layer 162a, a second insulating layer 164, and a second gate electrode 166 are stacked. The first gate electrode 154 is arranged to overlap the first oxide semiconductor layer 162a via the first insulating layer 158, and the second gate electrode 166 is arranged to overlap the first oxide semiconductor layer 162a via the second insulating layer 164. The first gate electrode 154, the second gate electrode 166, and the first oxide semiconductor layer 162a have mutually overlapping regions. The driving transistor 138 has a channel formed in a region where the first oxide semiconductor layer 162a overlaps with the first gate electrode 154 and the second gate electrode 166. The first gate electrode 154 is arranged inside the first opening 152a and is buried by the fourth transparent resin layer 150d. The second gate electrode 166 is disposed on the upper layer of the second insulating layer 164 (the surface opposite to the transparent resin substrate 124 ).

[0102] The first transparent conductive layer 160a and the second transparent conductive layer 160b are arranged between the first insulating layer 158 and the first oxide semiconductor layer 162a. The first transparent conductive layer 160a and the second transparent conductive layer 160b are arranged so as to sandwich the first gate electrode 154 and the second gate electrode 166 from both sides when viewed from above. The first transparent conductive layer 160a and the second transparent conductive layer 160b may also be arranged so that the front end regions overlap with the first gate electrode 154 and the second gate electrode 166. The first transparent conductive layer 160a and the second transparent conductive layer 160b are provided so as to be in contact with the first oxide semiconductor layer 162a. In the driving transistor 138, the region where the first transparent conductive layer 160a and the first oxide semiconductor layer 162a are in contact is a drain region, and the region where the second transparent conductive layer 160b and the first oxide semiconductor layer 162a are in contact is a source region.

[0103] The first oxide semiconductor layer 162a is formed using a metal oxide material. As the metal oxide material, a quaternary oxide material, a ternary oxide material, a binary oxide material, and a monovalent oxide material are applicable. These metal oxide materials may be in an amorphous form, a crystalline form, or a mixed phase of an amorphous and crystalline phase.

[0104] As quaternary oxide materials, In2O3-Ga2O3-SnO2-ZnO series oxide materials can be used, and as ternary oxide materials, In2O3-Ga2O3-SnO2 series oxide materials, In2O3-Ga2O3-ZnO series oxide materials, In2O3-SnO2-ZnO series oxide materials, In2O3-Al2O3-ZnO series oxide materials, Ga2O3-SnO2-ZnO series oxide materials, Ga2O3-Al2O3-ZnO series oxide materials can be used. Materials, SnO2-Al2O3-ZnO series oxide materials, In2O3-ZnO series oxide materials, SnO2-ZnO series oxide materials, Al2O3-ZnO series oxide materials, MgO-ZnO series oxide materials, SnO2-MgO series oxide materials, In2O3-MgO series oxide materials can be used as binary oxide materials, and In2O3 series metal oxide materials, SnO2 series metal oxide materials, ZnO series metal oxide materials, etc. can be used as monometallic oxide materials. In addition, the above-mentioned oxide semiconductors may also include silicon (Si), nickel (Ni), tungsten (W), hafnium (Hf), and titanium (Ti). In addition, for example, the In-Ga-Zn-O series oxide material shown above is an oxide material containing at least In, Ga, and Zn, and its composition ratio is not particularly limited. In addition, if expressed in other expressions, the oxide semiconductor layer 162 may use a thin film represented by the chemical formula InMO3(ZnO)m (m>0). Here, M represents one or more metal elements selected from Ga, Al, Mg, Ti, Ta, W, Hf and Si. In addition, the oxides contained in the above-mentioned quaternary oxide materials, ternary oxide materials, binary oxide materials and monovalent oxide materials are not limited to having a stoichiometric composition, and may also be composed of oxide materials having a composition deviating from the stoichiometric composition. Such metal oxide semiconductor materials have a band gap of more than 3.0 eV and are transparent to light in the visible light region.

[0105] The first transparent conductive layer 160a and the second transparent conductive layer 160b are made of a conductive metal oxide material, a metal nitride material, or a metal nitride oxide material. As the metal oxide material, for example, indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), titanium oxide (TiN2) with niobium added, etc. can be used. b Ox) and the like. Such a metal oxide material can form a good ohmic contact with the oxide semiconductor layer 162. Alternatively, a metal nitride or metal nitride oxide having transparency and conductivity, such as titanium nitride (TiNx) or titanium nitride oxide (TiON), may be used.

[0106] like Figure 5AAs shown, the driving transistor 138 is electrically connected to the second common wiring 146b. The first oxide semiconductor layer 162a and the second transparent conductive layer 160b extend to the region where the third common wiring 146c is arranged and are electrically connected. The first oxide semiconductor layer 162a contacts the third common wiring 146c from the upper layer side, and the second transparent conductive layer 160b contacts the third common wiring 146c from the lower layer side. The second common wiring 146b is provided in contact with the shielding electrode 126 and is given the same potential as the shielding electrode 126. The third common wiring 146c is electrically connected to the second common wiring 146b via a contact hole 153a provided in the first insulating layer 158 and the fourth transparent resin layer 150d. As shown in FIG. Figure 4 As shown, in the planar layout, the third common wiring 146c is electrically connected in the second direction ( Figure 4 The first common wiring 146a, the second common wiring 146b, and the third common wiring 146c are formed of a metal material such as titanium, aluminum, molybdenum, or copper.

[0107] The first insulating layer 158 has a structure in which, for example, a first silicon nitride film 174a and a first silicon oxide film 176a are stacked from the first gate electrode 154 side. The second insulating layer 164 has a structure in which, for example, a second silicon oxide film 176b and a second silicon nitride film 174b are stacked from the first oxide semiconductor layer 162a side. The first oxide semiconductor layer 162a is provided in contact with the first silicon oxide film 176a and the second silicon oxide film 176b. The first oxide semiconductor layer 162a is provided in contact with the silicon oxide film, so that the generation of oxygen vacancies is expected to be suppressed. The first silicon oxide film 176a and the second silicon oxide film 176b provided in contact with the channel region of the first oxide semiconductor layer 162a ideally have no oxygen vacancies, and preferably contain oxygen in excess. The first silicon oxide film 176a and the second silicon oxide film 176b containing oxygen in excess can serve as a supply source for oxygen to the first oxide semiconductor layer 162a. The silicon oxide film containing excess oxygen includes a film containing more oxygen than the stoichiometric composition. The silicon oxide film containing excess oxygen may contain excess oxygen in the crystal lattice. In addition, the first insulating layer 158 and the second insulating layer 164 may also use a silicon nitride oxide film or an aluminum oxide film instead of the silicon oxide film.

[0108] The first gate electrode 154 and the second gate electrode 166 are made of metal materials such as aluminum (Al), molybdenum (Mo), tungsten (W), zirconium (Zr), and copper (Cu). As aluminum alloys, aluminum-neodymium alloy (Al-Nd), aluminum-neodymium-nickel alloy (Al-Nd-Ni), aluminum-carbon-nickel alloy (Al-C-Ni), copper-nickel alloy (Cu-Ni), etc. can be used. For example, the first gate electrode 154 and the second gate electrode 166 are made of a film of aluminum (Al), molybdenum-tungsten (MoW) alloy, etc. In addition, the first gate electrode 154 can also be formed by a first gate electrode layer 154a formed using the same transparent conductive film as the shielding electrode 126, and a first gate electrode layer 154b formed using the above-mentioned metal film.

[0109] The driving transistor 138 is covered by a planarization layer 172. The planarization layer 172 is formed of an organic resin material such as acrylic resin, polyimide resin, epoxy resin, polyamide resin, etc. When the planarization layer 172 is coated with a composition containing a precursor of an organic resin material in the manufacturing stage, the surface is flattened by the leveling effect of the coating film. The planarization layer 172 can also be formed of an inorganic insulating film such as a silicon oxide film and a silicon nitride film.

[0110] The driving transistor 138 involved in this embodiment has a dual-gate structure in which the first oxide semiconductor layer 162a is sandwiched by two gate electrodes (the first gate electrode 154 and the second gate electrode 166). The first gate electrode 154 and the second gate electrode 166 are preferably electrically connected and set to the same potential. As a result, the current driving capability of the driving transistor 138 is improved, and a current sufficient to drive the organic EL element 134 can be supplied. For example, even if the operating point of the organic EL element 134 changes, the driving transistor 138 can perform constant current driving according to the change of the operating point.

[0111] 1-3-2-2. Selecting transistors

[0112] The selection transistor 136 has a structure in which a first gate electrode 156, a first insulating layer 158, a second oxide semiconductor layer 162b, a second insulating layer 164, and a second gate electrode 168 are stacked. The selection transistor 136 has a channel formed in a region where the second oxide semiconductor layer 162b overlaps with the first gate electrode 156 and the second gate electrode 168. The first gate electrode 156 is arranged inside the second opening 152b of the shielding electrode 126. The first gate electrode 156 may have a structure in which a first gate electrode layer 156a formed of the same transparent conductive film as the shielding electrode 126 and a first gate electrode layer 156b formed of a metal film are stacked inside the second opening 152b. A third transparent conductive layer 160c and a fourth transparent conductive layer 160d are provided between the first insulating layer 158 and the second oxide semiconductor layer 162b. The third transparent conductive layer 160c and the fourth transparent conductive layer 160d are provided in contact with the second oxide semiconductor layer 162b and function as a source region and a drain region. The third transparent conductive layer 160c and the fourth transparent conductive layer 160d are provided so as to sandwich the first gate electrode 156 and the second gate electrode 168 from both sides in a plan view.

[0113] The third transparent conductive layer 160c is electrically connected to the data signal line 144. The data signal line 144 is directly connected to the upper surface of the third transparent conductive layer 160c. The second oxide semiconductor layer 162b extends to the area where the data signal line 144 is provided, and is provided in a manner covering the data signal line 144. By directly contacting the third transparent conductive layer 160c, the data signal line 144 has an increased contact area and a reduced contact resistance compared to the case of connection via a contact hole. In addition, the upper surface and side surfaces of the data signal line 144 are covered by the second oxide semiconductor layer 162b, so that they are not exposed to an oxidizing atmosphere and a reducing atmosphere during the manufacturing process. Therefore, the data signal line 144 can suppress the high resistance of the surface.

[0114] The fourth transparent conductive layer 160d is electrically connected to the drain electrode 169. The second oxide semiconductor layer 162b is disposed on the upper surface of the fourth transparent conductive layer 160d so as to cover the drain electrode 169. The drain electrode 169 is electrically connected to the second gate electrode 166 of the drive transistor 138. The selection transistor 136 has a double gate structure in which the first oxide semiconductor layer 162b is sandwiched between the first gate electrode 156 and the second gate electrode 168. Thus, the selection transistor 136 can improve the switching characteristics and reduce the off current.

[0115] 1-3-2-3. Capacitor element

[0116] like Figure 5BAs shown, the capacitor element 140 has a structure in which the first capacitor electrode 170a, the first insulating layer 158, and the second capacitor electrode 170b are stacked. The first capacitor electrode 170a is formed in a region where the fourth transparent conductive layer 160d and the second oxide semiconductor layer 162b extend to the outside of the drain electrode 169. The first capacitor electrode 170a has a structure in which the fourth transparent conductive layer 160d and the second oxide semiconductor layer 162b are stacked. The first capacitor electrode 170a is electrically connected to the drain of the selection transistor 136. The second capacitor electrode 170b is formed in the same layer as the second gate electrode 168, and is electrically connected to the first common wiring 146a via a contact hole 153b provided in the first insulating layer 158 and the fourth transparent resin layer 150d.

[0117] 1-3-2-4. Organic EL elements

[0118] like Figure 5A As shown, the organic EL element 134 has a structure in which a first electrode 180 corresponding to a cathode, an electron transport layer 182, an electron injection layer 184, a light-emitting layer 186, a hole transport layer 188, a hole injection layer 190, and a second electrode 192 corresponding to an anode are stacked from the transparent resin substrate 124 side.

[0119] In the region where the organic EL element 134 is formed, an opening 178 is provided in the planarization layer 172 and the second insulating layer 164. The first electrode 180 serving as the cathode of the organic EL element 134 is arranged to overlap with the opening 178. In addition, the opening 178 exposes the upper surface of the electron transport layer 182 arranged on the first electrode 180. On the electron transport layer 182, an electron injection layer 184, a light emitting layer 186, a hole transport layer 188, a hole injection layer 190, and a second electrode 192 serving as an anode are stacked corresponding to the arrangement of the opening 178. The region where these stacked bodies overlap with the first electrode 180 becomes the light emitting region of the organic EL element 134. Hereinafter, each layer constituting the organic EL element 134 will be described in detail.

[0120] 1-3-2-4-1. Cathode

[0121] The first electrode 180, which is equivalent to a cathode, is formed of a transparent conductive film. Specifically, the first transparent conductive layer 160a is extended to the region of the organic EL element 134, thereby forming the first electrode 180. The first transparent conductive layer 160a and the first electrode 180 are formed of a continuous transparent conductive film, thereby forming an electrical connection between the driving transistor 138 and the organic EL element 134. The organic EL element 134 and the driving transistor 138 are directly connected without passing through a contact hole. With such a structure, the structure of the pixel 110a is simplified.

[0122] The first electrode 180, which functions as a cathode, is formed of a conductive film similar to the first transparent conductive layer 160a. The first transparent conductive layer 160a is formed of a conductive metal oxide material, a metal nitride material, or a metal nitride oxide material. The conductive film formed of these materials has a band gap of 2.8 eV or more, preferably 3.0 eV or more, and thus transmits light in the visible light region. Therefore, it can be used as an electrode on the light emitting surface side of the organic EL element 134.

[0123] A first oxide semiconductor layer 162a extending from the driving transistor 138 may also be provided on the upper layer of the first electrode 180. The band gap of the first oxide semiconductor layer 162a is 3.0 eV or more, so it is transparent to visible light. In addition, as described below, the electron transport layer 182 is formed of a metal oxide. Therefore, the first oxide semiconductor layer 162a of the same material or the same type as the electron transport layer 182 is interposed between the first electrode 180 corresponding to the cathode, so that an electron injection barrier can be formed. In other words, the first oxide semiconductor layer 162a extending from the channel region of the driving transistor 138 can be used as a part of the electron transport layer 182 connected to the first electrode 180.

[0124] 1-3-2-4-2. Electron transport layer

[0125] The electron transport layer 182 is formed using a metal oxide material. As the metal oxide material, the same quaternary oxide material, ternary oxide material, binary oxide material, and monovalent oxide material as the oxide semiconductor layer 162 can be applied. These metal oxide materials may be in an amorphous state, a crystalline state, or a mixed phase of an amorphous and crystalline phase.

[0126] For example, the electron transport layer 182 is formed by including one or more selected from indium oxide, zinc oxide, gallium (Ga) oxide, tin (Sn) oxide, magnesium (Mg) oxide, silicon (Si) oxide, hafnium (Hf) oxide, tantalum (Ta) oxide, and niobium (Nb) oxide. The band gap of these metal oxide materials is greater than 3.0 eV and is transparent to visible light. The electron transport layer 182 is preferably formed with a film thickness of 50 nm to 1000 nm. The electron transport layer 182 is as large as possible, thereby increasing the effect of preventing the short circuit between the first electrode 180 and the second electrode 192. The electron transport layer 182 is made by sputtering, vacuum evaporation, coating, etc.

[0127] In addition, the carrier concentration of the electron transport layer 182 is less than one tenth of the carrier concentration of the first oxide semiconductor layer 162a, preferably less than one hundredth. In other words, the carrier concentration of the region where the first oxide semiconductor layer 162a and the electron transport layer 182 are in contact is 10 times or more, preferably 100 times or more, of the carrier concentration of the electron transport layer 182. Specifically, the carrier concentration of the electron transport layer 182 is 10 13 / cm 3 ~10 17 / cm 3 In contrast, the carrier concentration of the first oxide semiconductor layer 162a is 10 15 / cm 3 ~10 19 / cm 3 The difference in carrier concentration between the two is 1 order of magnitude or more, preferably 2 orders of magnitude or more, as described above. The carrier concentration of the first oxide semiconductor layer 162a is 10 15 / cm 3 ~10 19 / cm 3 In the range of , the resistance loss can be reduced when the driving transistor 138 and the organic EL element 134 are electrically connected, thereby suppressing the increase in the driving voltage. 20 / cm 3 If the carrier concentration of the electron transport layer 182 is 10 13 / cm 3 In this way, the first oxide semiconductor layer 162a extending from the driving transistor 138 is provided in contact with the electron transport layer 182, and the carrier concentrations of both sides are made different, so that the driving voltage can be prevented from rising, thereby improving the luminous efficiency of the organic EL element 134.

[0128] The carrier concentration of the electron transport layer 182 can be controlled by controlling the concentration of oxygen vacancies in the oxide semiconductor film. The oxygen vacancies in the oxide semiconductor film act as donors. If the density of oxygen vacancies in the oxide semiconductor film is increased, the carrier concentration increases, and if the density of oxygen vacancies is reduced, the carrier concentration decreases. The oxygen vacancies in the oxide semiconductor can be increased by the action of hydrogen, for example, and reduced by supplying oxygen.

[0129] 1-3-2-4-3. Electron injection layer

[0130] In an organic EL element, an electron injection layer is used to reduce the energy barrier for injecting electrons from a cathode into an electron transport layer. The electron injection layer 184 is preferably configured to facilitate the injection of electrons from the electron transport layer 182 formed of an oxide semiconductor into the light-emitting layer 186. Therefore, in the organic EL element 134, the electron injection layer 184 is provided between the electron transport layer 182 and the light-emitting layer 186.

[0131] The electron injection layer 184 is preferably formed of a material with a small work function so as to inject electrons into the light-emitting layer 186. The electron injection layer 184 is composed of calcium (Ca) oxide and aluminum (Al) oxide. As the electron injection layer 184, for example, C12A7 (12CaO·7Al2O3) electron crystal (electride) is preferably used. C12A7 electron crystal has semiconductor properties and can be controlled from high resistance to low resistance. The work function is also the same as that of alkali metals, which is 2.4eV to 3.2eV, and is suitable as the electron injection layer 184.

[0132] The electron injection layer 184 formed by the C12A7 electron crystal is made by sputtering using a polycrystalline C12A7 electron crystal as a target. The C12A7 electron crystal has semiconductor properties, so the film thickness of the electron injection layer 184 is preferably 1nm to 100nm. If the film thickness of the electron injection layer 184 is less than this range, an interface with a small energy barrier cannot be formed between the light-emitting layers 186. If the film thickness is greater than this range, the resistance value becomes higher and the driving voltage increases. In addition, the molar ratio of Ca:Al in the C12A7 electron crystal is preferably in the range of 13:13 to 11:16. In addition, the C12A7 electron crystal is formed into a film by sputtering, and is preferably amorphous, but may also have crystallinity.

[0133] C12A7 electron crystals are stable in the atmosphere and have advantages such as simpler operation compared to alkali metal compounds such as lithium fluoride (LiF), lithium oxide (Li2O), sodium chloride (NaCl), and potassium chloride (KCl) that have been used as electron injection layers. Therefore, in the manufacturing process of organic EL elements, there is no need to work in dry air or inert gas, which can alleviate the restrictions on manufacturing conditions.

[0134] In addition, since the ionization potential of the C12A7 electron crystal is large, it is arranged on the opposite side of the hole transport layer 188 across the light-emitting layer 186, thereby being used as a hole blocking layer. That is, the electron injection layer 184 formed of the C12A7 electron crystal is provided between the electron transport layer 182 and the light-emitting layer 186, which can inhibit the holes injected into the light-emitting layer 186 from penetrating toward the first electrode 180 side as the cathode, thereby improving the light-emitting efficiency.

[0135] 1-3-2-4-4. Luminescent layer

[0136] Various materials can be applied as the light-emitting layer 186. For example, as the material forming the light-emitting layer 186, a fluorescent compound that emits fluorescence and a phosphorescent compound that emits phosphorescence can be used. For example, a light-emitting layer corresponding to red and a light-emitting layer corresponding to green can be formed using a phosphorescent compound, and a light-emitting layer corresponding to blue can be formed using a fluorescent compound. In order to set the light-emitting layer 186 as a white light-emitting layer, it can also have a structure in which a blue light-emitting layer and a yellow light-emitting layer are stacked. The light-emitting layer 186 can be produced by evaporation, transfer, spin coating, spraying, gravure printing, etc. The film thickness of the light-emitting layer 186 can be appropriately selected, for example, set to a range of 10nm to 100nm.

[0137] 1-3-2-4-5. Hole transport layer

[0138] The hole transport layer 188 is formed using a material having hole transport properties. The hole transport layer 188 may be, for example, an arylamine compound, an amine compound containing a carbazole group, an amine compound containing a fluorene derivative, etc. The hole transport layer 188 is made by a vacuum evaporation method, a coating method, etc. The hole transport layer 188 is made by such a film forming method to have a film thickness of 10nm to 500nm. In addition, the hole transport layer 188 may also be omitted.

[0139] 1-3-2-4-6. Hole injection layer

[0140] The hole injection layer 190 contains a substance with high hole injection properties for the organic layer. As a substance with high hole injection properties, metal oxides such as molybdenum oxide or vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used. In addition, materials such as phthalocyanine (H2Pc), copper (II) phthalocyanine (abbreviated as: CuPc), and hexaazabenzo[9,10]phenanthrene hexacarbonitrile (Hexaazatriphenylene hexa carbonitrile) (HAT-(CN)6) can also be used. Such a hole injection layer 190 is made by a film forming method such as a vacuum evaporation method and a coating method. The hole injection layer 190 is made by such a film forming method with a film thickness of 1nm to 100nm.

[0141] 1-3-2-4-7. Anode

[0142] The second electrode 192, which is equivalent to the anode, is made of a metal, alloy, or conductive compound with a large work function (specifically, 4.0 eV or more). The second electrode 192 uses, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide containing tungsten oxide and zinc oxide (IWZO), or the like. The second electrode 192, which is equivalent to the anode, is made of these conductive metal oxide materials by vacuum evaporation or sputtering. The organic EL element 134 is a bottom emission type, and the second electrode 192, which is equivalent to the anode, is preferably light reflective or has a light reflecting surface. The film of conductive metal oxides such as indium tin oxide (ITO) and indium zinc oxide (IZO) is light-transmitting, so a metal film such as aluminum (Al) or silver (Ag) may be stacked on the surface on the opposite side of the hole injection layer 190. In addition, in Figure 4 , Figure 5A and Figure 5B Although omitted in the figure, a passivation layer that prevents oxygen (O 2 ) and water (H 2 O) from passing through may be provided on the upper layer of the second electrode 192 .

[0143] As described above, the pixel 110a according to the present embodiment has a structure in which the driving transistor 138 exhibiting n-channel conductivity is electrically connected to the organic EL element 134. The organic EL element 134 is a bottom emission type, and emits light toward the shielding electrode 126. The electron transport layer and the electron injection layer disposed on the lower layer side of the organic EL element 134 are formed of an inorganic insulating material, so that the degradation of the characteristics can be suppressed, thereby achieving the stabilization of the characteristics of the organic EL element 134.

[0144] 1-4. Touch sensor configuration

[0145] Like reference Figure 6 As described above, the first sensor electrodes 114 and the second sensor electrodes 116 are arranged to cross each other so as to form a matrix. Figure 7 The structure of the touch sensor 108 and the driving circuit 112 which are arranged to overlap with the display unit 102 is shown.

[0146] Figure 7 The touch sensor 108 having the first sensor electrode 114 and the second sensor electrode 116, and the first drive circuit 112a, the second drive circuit 112b, and the third drive circuit 112c arranged in the outer area of ​​the touch sensor 108 are shown. The first drive circuit 112a has a function of sequentially selecting the scanning signal lines arranged in the display unit 102 and outputting the scanning signals. The third drive circuit 112c is a scanning circuit of the touch sensor, and has a function of sequentially selecting the second sensor electrode 116 and sequentially outputting the common drive signal (Vcom). The first drive circuit 112a and the third drive circuit 112c are composed of sequential logic circuits (Sequential Logic) such as shift registers.

[0147] On the other hand, the second driving circuit 112b includes circuit blocks having different functions. The circuit blocks include a touch sensor sensing circuit block 117a, a touch sensor scanning circuit block 117b, a scanning signal line driving circuit block 117c, and an image signal line driving circuit block 117d. The second driving circuit 112b including these circuit blocks 117 is preferably implemented by a single semiconductor chip (integrated circuit). Figure 7 The second driving circuit 112b including these multiple circuit blocks is implemented by one bare chip and mounted on the flexible printed wiring board 122 by COF (Chip on Film). In this way, by integrating multiple functions with one semiconductor chip, the cost required for mounting can be reduced.

[0148] In the second driving circuit 112b, the touch sensor sensing circuit block 117a is connected to the first sensor electrode 114. The touch sensor sensing circuit block 117a has a function of sequentially outputting a detection signal (Vdet) to the first sensor electrode 114. The touch sensor scanning circuit block 117b has a function of outputting a timing signal and a common driving signal (Vcom) to the third driving circuit 112c. The scanning signal line driving circuit block 117c has a function of outputting a timing signal synchronized with an image signal to the first driving circuit 112a. The image signal line driving circuit block 117d is connected to an image signal line provided in the display unit 102, and has a function of outputting an image signal to the image signal line.

[0149] Figure 8 The figure shows a state where the first driving circuit 112a and the third driving circuit 112c are arranged on both sides of the display unit 102. According to this circuit configuration, the same scanning signal is applied to the scanning signal line (not shown) provided in the display unit 102 from both sides, and the same common driving signal (Vcom) is applied to the second sensor electrode 116 from both sides. With such a circuit configuration, the scanning signal line and the second sensor electrode 116 can be driven at high speed even when the load capacitance of the scanning signal line and the second sensor electrode 116 is large. The second driving circuit 112b integrates the touch sensor sensing circuit block 117a, the touch sensor scanning circuit block 117b, the scanning signal line driving circuit block 117c, and the image signal line driving circuit block 117d on one semiconductor chip (integrated circuit). As a result, compared with the case where each circuit block is mounted as a separate semiconductor chip (integrated circuit), the mounting process of the semiconductor chip (integrated circuit) on the flexible printed circuit board 122 can be reduced.

[0150] On the other hand, when the semiconductor chip (integrated circuit) for controlling the touch sensor and the semiconductor chip (integrated circuit) for driving the display unit 102 are implemented by separate semiconductor chips, two semiconductor chips need to be installed separately. Therefore, the same installation process is repeated twice, which becomes the main reason for the decrease in productivity. In contrast, according to this embodiment, the installation process can be completed in one time. As a result, the manufacturing yield can be improved, thereby reducing the manufacturing cost.

[0151] In addition, Figure 7 2 shows an example in which the second driving circuit 112 b is implemented by one semiconductor chip, but the present invention is not limited to such an aspect, and the functions of each circuit block may be implemented by a separate semiconductor chip.

[0152] Fig. 9 1 shows a schematic cross-sectional structure of a touch panel display 100. The touch panel display 100 shows a transparent resin substrate 124 including a first sensor electrode 114, a second sensor electrode 116, and a shield electrode 126, and a terminal portion 106, a circuit element layer 149, an organic EL element 134, and a sealing layer 128 provided on the transparent resin substrate 124. The circuit element layer 149 is a layer including circuit elements such as a drive transistor 138, a selection transistor 136, and a capacitor 140.

[0153] In the terminal portion 106, the terminal electrodes 118a and 118b are formed in the same layer as the circuit element layer 149. That is, the terminal electrodes 118a and 118b are provided on the fourth transparent resin layer 150d. In this case, the first sensor electrode 114 is connected to the terminal electrode 118b through the contact hole penetrating the fourth transparent resin layer 150d, the third transparent resin layer 150c, and the second transparent resin layer 150b, and the second sensor electrode 116 is connected to the terminal electrode 118a through the contact hole penetrating the fourth transparent resin layer 150d and the third transparent resin layer 150c. The terminal electrodes 118a and 118b are electrically connected to the flexible printed wiring board 122 on which the second driving circuit 112b is mounted. In this way, the terminal electrode and the sensor electrode provided in the same layer are connected through the contact holes of different depths, thereby realizing the high density of the terminal portion 106.

[0154] According to this embodiment, by embedding the sensor electrodes constituting the touch sensor in the transparent resin substrate, it is possible to achieve a thinner touch panel display and also to realize a flexible touch panel display.

[0155] 1-5. Method for manufacturing display device

[0156] An example of a method for manufacturing a touch panel display according to an embodiment of the present invention will be described with reference to the accompanying drawings. Figure 5A and Figure 5B The manufacturing method according to this embodiment will be described with reference to the structure corresponding to the pixel 110 a shown in FIG.

[0157] Fig. 10A and Fig. 10B 1 shows a stage of manufacturing the transparent resin substrate 124. When manufacturing the touch panel display according to the present embodiment, a support substrate 200 is used. As the support substrate 200, a plate-shaped glass substrate having a first surface and a second surface opposite to the first surface can be used. As the glass substrate, it is desirable that the heat resistance is high, for example, it is preferable to use an alkali-free glass substrate having a strain point of 500°C or more, preferably 550°C or more.

[0158] A first transparent resin layer 150a is formed on the first surface of the supporting substrate 200. The first transparent resin layer 150a is made of a resin material having insulating properties. As the resin material, a transparent polyimide resin, a transparent polyethylene naphthalate resin, a transparent para-type polyamide resin, etc. are used. When a transparent polyimide resin is used, for example, a diamine and an acid anhydride are polymerized in the presence of a solvent to obtain a polyimide precursor resin, and then the polyimide precursor resin is applied to the first surface of the supporting substrate 200, and imidized by heat treatment to produce the first transparent resin layer 150a. When a transparent para-type polyamide resin is used, the solubility in an organic solvent is improved by copolymerization and then applied to the first surface of the supporting substrate 200, and the solvent is evaporated by heat treatment and hardened to produce the first transparent resin layer 150a. The first transparent resin layer 150a is formed with a thickness of 3μm to 30μm.

[0159] The first sensor electrode 114 is formed on the first transparent resin layer 150a. The first sensor electrode 114 is made of a transparent conductive film. As the transparent conductive film, indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), titanium oxide with niobium added (TiNbO x ), a metal oxide with conductivity such as titanium nitride (TiNx), titanium oxynitride (TiON), a metal nitride or metal nitride oxide, a conductive transparent conductive film, a metal nanowire such as silver (Ag) nanowire, polyaniline, graphene, carbon nanotubes, and other conductive organic materials. The first sensor electrode 114 is produced by forming a transparent conductive film on the entire surface of the first surface of the first transparent resin layer 150a, forming a resist mask by a photolithography process, and etching. The transparent conductive film formed on the first transparent resin layer 150a is, for example, Figure 6The first sensor electrode 114 may be formed in a flat plate (strip) pattern as shown. In addition, the first sensor electrode 114 may be made of a metal film as in other embodiments, and may be formed in a mesh pattern with through holes corresponding to the arrangement of the pixels 110a. The first sensor electrode 114 is formed with a thickness of 50nm to 1000nm.

[0160] A second transparent resin layer 150b is formed on the first sensor electrode 114. The second transparent resin layer 150b is produced in the same manner as the first transparent resin layer 150a. The second transparent resin layer 150b is preferably formed to have a flat surface by embedding the step difference using the pattern of the first sensor electrode 114. A second sensor electrode 116 is formed on the second transparent resin layer 150b. The second sensor electrode 116 is produced in the same manner as the first sensor electrode 114. The second sensor electrode 116 is, for example, Figure 6 As shown, the second sensor electrode 116 is formed in a manner having a flat (strip) pattern. In addition, an opening 119 is formed on the second sensor electrode 116 corresponding to the configuration of the first gate electrode 154 of the driving transistor 138. A third transparent resin layer 150c is formed on the second sensor electrode 116. The third transparent resin layer 150c is made in the same way as the first transparent resin layer 150a. The third transparent resin layer 150c is preferably embedded in the step difference using the pattern of the second sensor electrode 116, and the surface is formed flat.

[0161] Fig.11A and Fig. 11B The figure shows the stage of forming the shielding electrode 126 and the fourth transparent resin layer 150d on the third transparent resin layer 150c. The shielding electrode 126 is formed on substantially the entire surface of the third transparent resin layer 150c. The shielding electrode 126 is made using a transparent conductive film. As a transparent conductive film, a film of a conductive metal oxide such as indium tin oxide (ITO), zinc oxide (ZnO), tin oxide (SnO2), and titanium oxide (TiNbOx) with niobium added is made by sputtering. The film thickness of the shielding electrode 126 only needs to be about 50nm to 500nm. In addition, when the shielding electrode 126 is formed using silver (Ag) nanowires, carbon nanotubes, and graphene, it can be made by a solution coating method using a silver (Ag) nanowire dispersion, a carbon nanotube dispersion, and a graphene dispersion.

[0162] On the shielding electrode 126, a first opening 152a is formed corresponding to the arrangement of the first gate electrode 154 of the driving transistor 138, and a second opening 152b is formed corresponding to the arrangement of the first gate electrode 156 of the selection transistor 136. A common wiring 146 is formed on the shielding electrode 126. The common wiring 146 is formed of a metal film such as titanium (Ti), aluminum (Al), molybdenum (Mo), or copper (Cu).

[0163] A first gate electrode 154 is formed inside the first opening 152a. The first gate electrode 154 is formed into a structure in which a first gate electrode layer 154a formed of a transparent conductive film like the shielding electrode 126 and a first gate electrode layer 154b formed of a metal film like the common wiring 146 are stacked. A first gate electrode 156 is formed inside the second opening 152b. The structure of the first gate electrode 156 is the same as that of the first gate electrode 154. By making the first gate electrodes 154 and 156 of a conductive layer like the shielding electrode 126 and the common wiring 146, the structure and process can be simplified. In addition, the opening 152 in the shielding electrode 126, the common wiring 146, and the first gate electrodes 154 and 156 are made using a multi-grayscale exposure method. Refer to Figures 12A to 12E The details of this process will be described below.

[0164] Figures 12A to 12E The cross-sectional structure of the region where the driving transistor 138 is arranged (with Fig.11A ), and shows the photolithography process of forming the shielding electrode 126, the first common wiring 146a, the second common wiring 146b, and the first gate electrode 154. In addition, Figures 12A to 12E The structure below the third transparent resin layer 150c is omitted.

[0165] Fig. 12A FIG. 1 shows a stage in which a transparent conductive film 130 and a metal film 132 are formed on the third transparent resin layer 150c, and a photoresist film 304 formed on the metal film 132 is exposed. In this process, a multi-grayscale exposure method (half-grayscale exposure method) is applied, and a single photomask is used. Fig.12E As shown in FIG. 1 , a first opening 152a, a first common wiring 146a, a second common wiring 146b, and a first gate electrode 154 (including a first gate electrode layer 154a and a first gate electrode layer 154b) are formed on the shielding electrode 126. FIG. 12A to FIG. 12E .

[0166] Fig. 12A In the embodiment, the photoresist film 304 is positive, and the non-photosensitive area is retained and the photosensitive area is removed by development. The exposure of the photoresist film 304 uses a multi-grayscale mask 300. The multi-grayscale mask 300 is provided with a multi-grayscale mask pattern 302. The multi-grayscale mask is generally known to include: a grayscale mask that is provided with a slit below the resolution of the exposure machine, and uses this slit portion to block a part of the light to achieve intermediate exposure; a half-grayscale mask that uses a semi-transparent film to achieve intermediate exposure. In this embodiment, a half-grayscale mask is used. The multi-grayscale mask pattern 302 includes an exposure area, an intermediate exposure area, and an unexposed area. Fig. 12AIn the example shown, the area corresponding to the first opening portion 152a becomes an exposure area except for the formation area of ​​the first gate electrode 154, the area corresponding to the shielding electrode 126 corresponds to the intermediate exposure area, and the area corresponding to the first common wiring 146a, the second common wiring 146b, and the first gate electrode layer 154b corresponds to the unexposed area.

[0167] Fig. 12B 1 shows a stage in which the photoresist film 304 is exposed and developed through the multi-tone mask 300. By developing the photoresist film 304, a resist mask pattern 306a including a region having a thickness that varies according to the amount of exposure light is formed. Fig. 12B In the embodiment, the resist mask pattern 306a formed by the positive resist is formed into the following form: the film thickness of the portion corresponding to the region where the first common wiring 146a, the second common wiring 146b, and the first gate electrode layer 154b are formed becomes thicker, and the film thickness of the portion corresponding to the region where the shielding electrode 126 is formed becomes thinner.

[0168] Fig. 12C The figure shows the stage of etching the metal film 132 and the transparent conductive film 130 to form the shielding electrode 126, the first opening 152a, and the first gate electrode layer 154a. When the metal film 132 is a metal such as titanium (Ti) or molybdenum (Mo), it can be processed by dry etching using a fluorine-based etching gas such as CF4. When the transparent conductive film 130 is a metal oxide such as ITO, it can be processed by dry etching using a chlorine-based etching gas such as BCl3. The transparent conductive film 130 has the property of being difficult to be etched by a fluorine-based etching gas such as CF4. Therefore, the metal film 132 can be selectively etched on the transparent conductive film 130. In this way, by stacking the metal film 132 that can be selectively etched with the transparent conductive film 130, a composite shape can be produced using a single multi-grayscale mask 300.

[0169] Then, if Fig.12D As shown in FIG. 1 , the resist mask pattern 306a is treated with oxygen plasma or the like to remove the resist corresponding to the intermediate exposure region, thereby forming a resist mask pattern 306b. Then, the metal film 132 is selectively etched using the resist mask pattern 306b, thereby forming a resist mask pattern 306b. Fig.12E As shown, the first common wiring 146a and the second common wiring 146b are formed on the shield electrode 126, and the first gate electrode layer 154b is formed on the first gate electrode layer 154a. Thereafter, the resist mask pattern 306b is removed by ashing or the like.

[0170] In this way, the shield electrode 126 having the first opening 152a, the first common wiring 146a, the second common wiring 146b, and the first gate electrode 154 (the first gate electrode layer 154a, the first gate electrode layer 154b) can be formed by one photomask and one exposure. Figures 12A to 12E Although not shown in the figure, the same is true for the second opening 152b and the first gate electrode 156 (the first gate electrode layer 156a and the first gate electrode layer 156b).

[0171] The fourth transparent resin layer 150d is formed on the upper layer of the shielding electrode 126. The fourth transparent resin layer 150d is produced in the same manner as the first transparent resin layer 150a. The upper surface of the transparent resin substrate 124 is flattened by the fourth transparent resin layer 150d.

[0172] Fig.13A and Fig. 13B 1 shows the stage of forming the first insulating layer 158, the transparent conductive layer 160, and the common wiring 146. The first insulating layer 158 is formed by stacking the first silicon nitride film 174a and the first silicon oxide film 176a from the side of the fourth transparent resin layer 150d. The first silicon nitride film 174a is formed by a plasma CVD method using SiH4, NH3, N2 and other gases as source gases. The first silicon oxide film 176a is also formed by a plasma CVD method using SiH4, N2O, Si(OC2H5)4 (tetraethoxysilane), Si(OCH3)4 (tetramethoxysilane) and the like as appropriate. The first insulating layer 158 is formed in such a manner as to cover substantially the entire surface of the fourth transparent resin layer 150d.

[0173] After forming the first insulating layer 158, a contact hole 153a for exposing the second common wiring 146b is formed. The contact hole 153a penetrates the first insulating layer 158 and the fourth transparent resin layer 150d.

[0174] A transparent conductive layer 160 (a first transparent conductive layer 160a, a second transparent conductive layer 160b, a third transparent conductive layer 160c, and a fourth transparent conductive layer 160d), a first capacitor electrode 170a, a data signal line 144, a drain electrode 169, and a third common wiring 146c are formed on the first insulating layer 158. The transparent conductive layer 160 and the first capacitor electrode 170a are made of a metal oxide material. Examples of the metal oxide material include indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), tin oxide (SnO2), titanium oxide to which niobium is added (TiNbO x) etc. The data signal line 144, the drain electrode 169, and the third common wiring 146c are made of metal materials. As metal materials, titanium (Ti), aluminum (Al), molybdenum (Mo), copper (Cu), etc. are used. For example, these wirings and electrodes have a structure in which a high melting point metal such as titanium (Ti), molybdenum (Mo), copper (Cu) is coated with aluminum (Al) or an upper layer side and a lower layer side of a metal core mainly composed of aluminum (Al).

[0175] After forming a transparent conductive film and a metal film on the first insulating layer 158, Figures 12A to 12E Similarly to the example described, the transparent conductive layer 160 (the first transparent conductive layer 160a, the second transparent conductive layer 160b, the third transparent conductive layer 160c, and the fourth transparent conductive layer 160d), the first capacitor electrode 170a, and the third common wiring 146c are patterned using a multi-grayscale exposure method. Through this process, the second common wiring 146b and the third common wiring 146c are electrically connected via the fourth transparent resin layer 150d in the region where the contact hole 153a is formed. In addition, the data signal line 144 is formed on the third transparent conductive layer 160c, and the drain electrode 169 is formed on the fourth transparent conductive layer 160d.

[0176] Fig.14A and Fig. 14B 160a and 160b. The first oxide semiconductor layer 162a is formed so as to cover substantially the entire surface of the first transparent conductive layer 160a and the second transparent conductive layer 160b. The second oxide semiconductor layer 162b is formed so as to cover substantially the entire surface of the third transparent conductive layer 160c and the fourth transparent conductive layer 160d. The first oxide semiconductor layer 162a and the second oxide semiconductor layer 162b are formed by using an oxide semiconductor as a target material to form an oxide semiconductor film by sputtering, and then performing a photolithography process to form the oxide semiconductor film. Figure 4 The first oxide semiconductor layer 162a is formed in contact with the first transparent conductive layer 160a and the second transparent conductive layer 160b, and the second oxide semiconductor layer 162b is formed in contact with the third transparent conductive layer 160c and the fourth transparent conductive layer 160d, thereby forming an electrically connected state.

[0177] Fig.15A and Fig. 15B 1 and 2 show a stage in which the electron transport layer 182 , the second insulating layer 164 , the second gate electrodes 166 and 168 , and the second capacitor electrode 170 b are formed on the oxide semiconductor layer 162 .

[0178] like Fig.15AAs shown, an electron transport layer 182 is formed on the first oxide semiconductor layer 162a. The electron transport layer 182 is in contact with the upper surface of the first oxide semiconductor layer 162a and is isolatedly provided corresponding to each pixel. The electron transport layer 182 is formed in a region overlapping with the first electrode 180 continuous from the first transparent conductive layer 160a. The electron transport layer 182 is made of an oxide semiconductor in the same manner as the first oxide semiconductor layer 162a. The oxide semiconductor material forming the electron transport layer 182 and the oxide semiconductor material forming the first oxide semiconductor layer 162a are formed of different materials, so that the electron transport layer 182 can be selectively processed on the first oxide semiconductor layer 162a. That is, the electron transport layer 182 is formed using an oxide semiconductor material having a faster etching rate than the first oxide semiconductor layer 162a, and the electron transport layer 182 can be selectively processed. In this processing, by using a multi-grayscale photomask, the first oxide semiconductor layer 162a and the electron transport layer 182 can be simultaneously formed in a single exposure process.

[0179] For example, the electron transport layer 182 is preferably made of a zinc (Zn)-based oxide semiconductor layer (ZnSiO x 、ZnMgO x 、ZnGaO x The oxide semiconductor layer 162 is preferably formed of a tin (Sn)-based oxide semiconductor layer (InGaSnO x 、InWSnO x 、InSiSnO xIn other words, the electron transport layer 182 preferably contains zinc oxide, at least one selected from silicon oxide, magnesium oxide and gallium oxide, and the oxide semiconductor layer 162 preferably contains tin oxide and indium oxide, at least one selected from gallium oxide, tungsten oxide and silicon oxide. In this way, the etching rates of the oxide semiconductor layers of both sides are different, and the selectivity can be improved. That is, the etching rate of the electron transport layer 182 can be made faster than that of the oxide semiconductor layer 162. In addition, the band gaps of the oxide semiconductor layer 162 and the electron transport layer 182 can be optimized. That is, the band gap of the electron transport layer 182 can be made larger than the band gap of the oxide semiconductor layer 162. For example, if the band gap of the oxide semiconductor layer 162 is greater than 3.0 eV, the value of the band gap of the electron transport layer 182 is greater than the band gap of the oxide semiconductor layer 162, and preferably greater than 3.4 eV. If the band gap of the electron transport layer 182 is greater than 3.4 eV, blue light is no longer absorbed, and reliability can be improved. In addition, the film thickness of the oxide semiconductor layer 162 is preferably 10 nm to 100 nm, and the film thickness of the electron transport layer 182 is preferably 50 nm to 500 nm. By setting the film thickness of the oxide semiconductor layer 162 and the electron transport layer 182 to be within such a range, the generation of plasmons in the first electrode 180 formed of a transparent conductive oxide can be suppressed, thereby improving the luminous efficiency of the organic EL element 134.

[0180] The second insulating layer 164 is formed to cover the oxide semiconductor layer 162 and the electron transport layer 182. The second insulating layer 164 is formed by stacking, for example, a second silicon oxide film 176b and a second silicon nitride film 174b from the side of the oxide semiconductor layer 162. Thus, the first silicon oxide film 176a is formed on the lower side of the oxide semiconductor layer 162, and the second silicon oxide film 176b is formed on the upper side. The oxide semiconductor layer 162 is sandwiched by the oxide-based insulating film, thereby suppressing the generation of defects (donor energy levels) due to oxygen vacancies.

[0181] like Fig. 15B As shown, a contact hole 153b is formed through the second insulating layer 164, the first insulating layer 158, and the fourth transparent resin layer 150d to expose the first common wiring 146a. In addition, a contact hole 153c is formed through the second insulating layer 164 and the first oxide semiconductor layer 162a to expose the drain electrode 169.

[0182] Then, the second gate electrodes 166, 168, and the second capacitor electrode 170b are formed. The second gate electrodes 166, 168, and the second capacitor electrode 170b are formed by etching the metal film formed on the upper surface of the second insulating layer 164 through a photolithography process. The second gate electrode 166 is formed in a manner including an area overlapping with the first gate electrode 154, and the second gate electrode 168 is formed in a manner including an area overlapping with the first gate electrode 156. Thus, the drive transistor 138 and the selection transistor 136 are formed. The second gate electrode 166 is electrically connected to the drain electrode 169 through the contact hole 153c. In addition, the second capacitor electrode 170b is electrically connected to the first common wiring 146a via the contact hole 153b. The capacitor element 140 is arranged in the area where the first capacitor electrode 170a and the second capacitor electrode 170b overlap, separated by the second insulating layer 164.

[0183] Fig.16A and Fig. 16B Indicates the stage of forming a planarization layer 172 and forming an opening 178 that exposes the electron transport layer 182. The planarization layer 172 is formed in a manner that buries the selection transistor 136, the drive transistor 138, and the capacitor 140. The planarization layer 172 is formed, for example, of an organic resin material such as an acrylic resin, a polyimide resin, an epoxy resin, or a polyamide resin. The planarization layer 172 forms an opening 178 that exposes the electron transport layer 182. When the planarization layer 172 is formed of a photosensitive resin material, the opening 178 is formed by performing an exposure process using a photomask. In addition, before forming the planarization layer 172 on the second insulating layer 164, an opening may be formed in advance in a region corresponding to the opening 178. In order to form the organic EL element 134, the opening 178 is preferably formed in a manner in which the inner wall surface is tapered.

[0184] Then, the electron injection layer 184, the light emitting layer 186, the hole transport layer 188, the hole injection layer 190, and the second electrode 192 are formed. Then, the transparent resin substrate 124 is peeled off from the support substrate 200. The transparent resin substrate 124 is peeled off by irradiating the laser from the support substrate 200 side. That is, ablation occurs at the interface between the transparent resin substrate 124 and the support substrate 200, and the adhesion of the first transparent resin layer 150a is weakened, so that peeling is performed.

[0185] Through the above process, production Figure 5AAnd the touch panel display with pixel 110a shown in B. The electron injection layer 184 can be made by sputtering using a sputtering target of C12A7 electron crystal. During sputtering, since the electron injection layer 184 is shared between multiple pixels, it is formed on substantially the entire surface of the area where the pixel 110a is configured. The light-emitting layer 186 is formed using different light-emitting materials corresponding to red pixels, green pixels, and blue pixels. In the case where the light emitted from the light-emitting layer 186 has a white light-emitting spectrum, it is formed as a layer shared by each pixel on substantially the entire surface of the area where the pixel 110a is configured. The hole transport layer 188 and the hole injection layer 190 are formed as layers shared by each pixel on substantially the entire surface of the area where the pixel 110a is configured. In addition, the second electrode 192 is used as a common electrode between pixels and is therefore formed on substantially the entire surface of the area where the pixel 110a is configured.

[0186] In addition, in the above process, if Fig.17 As shown, the support substrate 200 is a mother glass substrate (a substrate for multiple chamfers), and a plurality of display panels 101 may be manufactured on the support substrate 200 in the manufacturing process. In this case, the transparent resin layer 150 is formed on substantially the entire surface of the support substrate 200 except for the periphery of the end portion, and a plurality of display panels 101 are formed in the region of the transparent resin layer 150. In addition, in order to realize the singulation of the plurality of display panels 101 manufactured on the support substrate 200, the transparent resin substrate 124 formed by the transparent resin layer 150 is divided by the dividing region 202. The division of the transparent resin substrate 124 may be performed by laser processing.

[0187] In this case, the shielding electrode 126 formed of a transparent conductive film is preferably not formed on the dividing region 202. In addition, the first insulating layer 158 and the second insulating layer 164 formed of an inorganic insulating film such as a silicon oxide film or a silicon nitride film are preferably not formed on the dividing region 202. Since a transparent conductive film formed of an inorganic material is not formed on the dividing region 202, the shielding electrode 126 can be prevented from being damaged during the dividing process. Similarly, since an inorganic insulating film is not formed on the dividing region 202, damage to the first insulating layer 158 and the second insulating layer 164 can be prevented.

[0188] According to the manufacturing method of the touch panel display involved in this embodiment, the number of photomasks required for manufacturing can be reduced by using a multi-grayscale mask. By using a multi-grayscale mask, multiple patterns (shielding electrode 126 and first gate electrode 154, 156, second transparent conductive layer 160b and third common wiring 146c, third transparent conductive layer 160c and data signal line 144, fourth transparent conductive layer 160d and drain electrode 169, oxide semiconductor layer 162a and electron transport layer 182) can be produced by one exposure. As a result, the productivity of the touch panel display can be improved and the manufacturing cost can be reduced. In other words, even if the electrodes (first sensor electrode 114, second sensor electrode 116) constituting the embedded touch sensor are formed in the display device, the number of photomasks required for manufacturing can be reduced.

[0189] In addition, in this embodiment, an example of a dual-gate structure is shown for both the selection transistor 136 and the driving transistor 138, but the present invention is not limited to this. For example, the selection transistor 136 may also be a top-gate transistor in which the first gate electrode 156 is omitted. In addition, the pixel circuit is not limited to Figure 3 The transistor and the organic EL element according to this embodiment can be applied to a pixel circuit having three or more transistors per pixel in the circuit shown as an example.

[0190] Second embodiment:

[0191] This embodiment exemplifies a pixel structure different from that of the first embodiment in a touch panel display having a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, portions different from the first embodiment are described.

[0192] Fig.18 2 shows an equivalent circuit of the pixel 110b involved in this embodiment. The difference from the first embodiment is that the first gate electrode 156 of the selection transistor 136 and the first gate electrode 154 of the drive transistor 138 are electrically connected to the first common wiring 146a. Figure 3 The equivalent circuit shown is the same.

[0193] Fig.19 An example of a planar structure of a pixel 110 b of the touch panel display according to the present embodiment is shown. Fig. 20A Representation and Fig.19 The cross-sectional structure of the pixel 110 b corresponding to the line A3 - A4 is shown. Fig. 20B Representation and Fig.19 The cross-sectional structure of the pixel 110b corresponding to the line B3-B4 is shown. The following description will be given with reference to these drawings as appropriate.

[0194] The entire surface of the pixel 110b is provided with a shielding electrode 126. The shielding electrode 126 is provided so as to overlap with the driving transistor 138 and the selecting transistor 136. In other words, the pixel 110b according to this embodiment is different from the pixel 110a of the touch panel display according to the first embodiment in that an opening is not provided in the shielding electrode 126.

[0195] The driving transistor 138 is provided with a light shielding electrode 155 in a region overlapping with the second gate electrode 166. The light shielding electrode 155 is disposed between the shielding electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shielding electrode 126. The light shielding electrode 155 is formed of a metal film similarly to the first gate electrode layer 154b in the first embodiment. The shielding electrode 126 is formed of a transparent conductive film, whereas the light shielding electrode 155 is formed of a metal film, thereby preventing light incident from the transparent resin substrate 124 side from being incident on the channel region of the driving transistor 138. As a result, the variation of the threshold voltage of the driving transistor 138 is suppressed.

[0196] In addition, the light shielding electrode 155 is given the same potential as the shielding electrode 126. The shielding electrode 126 is given a ground potential, for example, so the light shielding electrode 155 is also at the same potential. The driving transistor 138 is applied with a fixed voltage through the first insulating layer 158 on the surface opposite to the second gate electrode 166 of the first oxide semiconductor layer 162a in which the channel is formed (also referred to as the reverse channel). Since the potential of the reverse channel of the driving transistor 138 is stabilized, the change of the threshold voltage is suppressed. In addition, in this embodiment, the light shielding electrode 155 can also be omitted.

[0197] The selection transistor 136 is also provided with a light shielding electrode 157 similarly to the drive transistor 138. Therefore, the selection transistor 136 is shielded from light by the light shielding electrode 157, and the potential of the reverse channel is stabilized. Thus, the variation of the threshold voltage of the selection transistor 136 is suppressed.

[0198] The light shielding electrodes 155 and 157 on the shield electrode 126 can be patterned using the multi-tone exposure method as in the first embodiment. That is, the light shielding electrodes 155 and 157 can be provided without increasing the number of photomasks as in the first embodiment.

[0199] In this embodiment, the pixel 110b has the same configuration as the pixel 110a in the first embodiment except for the configuration of the light shielding electrodes 155 and 157. Therefore, the touch panel display according to this embodiment achieves the same operational effects as those of the first embodiment.

[0200] 3rd embodiment:

[0201] This embodiment exemplifies a pixel structure different from that of the first embodiment in a touch panel display having a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, portions different from the first embodiment are described.

[0202] Fig.21 2 shows an equivalent circuit of the pixel 110c according to the present embodiment. The difference from the first embodiment is that the first gate electrode 154 of the driving transistor 138 is electrically connected to the first common wiring 146a. The other circuit configurations are similar to those of the first embodiment. Figure 3 The equivalent circuit shown is the same.

[0203] Fig. 22 An example of a planar structure of a pixel 110 c of the touch panel display according to the present embodiment is shown. Fig.23A Representation and Fig. 22 The cross-sectional structure of the pixel 110 c corresponding to the line A5 - A6 is shown. Fig. 23B Representation and Fig. 22 The cross-sectional structure of the pixel 110c corresponding to the line B5-B6 is shown. The following description will be given with reference to these drawings as appropriate.

[0204] The pixel 110c is provided in such a manner that the shielding electrode 126 covers the driving transistor 138. On the other hand, a second opening 152b is provided in a region where the selection transistor 136 is provided. The driving transistor 138 is provided with a light shielding electrode 155 in a region overlapping with the second gate electrode 166. The light shielding electrode 155 is disposed between the shielding electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shielding electrode 126. With such a structure, light incident from the transparent resin substrate 124 side is prevented from being incident on the channel region of the driving transistor 138. Thus, the variation of the threshold voltage of the driving transistor 138 is suppressed.

[0205] The selection transistor 136 has a dual-gate structure in which the first oxide semiconductor layer 162b is sandwiched between the first gate electrode 156 and the second gate electrode 168. Thus, the switching characteristics of the selection transistor 136 are improved, and the off current can be reduced.

[0206] In this embodiment, the pixel 110c has the same configuration as the pixel 110a in the first embodiment except for the configuration of the shielding electrode 126 and the light shielding electrode 155. Therefore, the touch panel display according to this embodiment achieves the same operational effects as those of the first embodiment.

[0207] Fourth embodiment:

[0208] This embodiment exemplifies a pixel structure different from that of the first embodiment in a touch panel display having a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, portions different from the first embodiment are described.

[0209] Fig.24 2 shows an equivalent circuit of a pixel 110d according to this embodiment. The difference from the first embodiment is that the first gate electrode 156 of the selection transistor 136 is electrically connected to the first common wiring 146a. The other circuit configurations are the same as those of the first embodiment. Figure 3 The equivalent circuit shown is the same.

[0210] Fig.25 An example of a planar structure of a pixel 110d of the touch panel display according to the present embodiment is shown. Fig.26A Representation and Fig.25 The cross-sectional structure of the pixel 110d corresponding to the A7-A8 line is shown. Fig.26B Representation and Fig.25 The cross-sectional structure of the pixel 110d corresponding to the line B7-B8 is shown. The following description will be given with reference to these drawings as appropriate.

[0211] The pixel 110d is provided in such a manner that the shielding electrode 126 covers the selection transistor 136. On the other hand, a first opening 152a is provided in a region where the driving transistor 138 is provided. The selection transistor 136 is provided with a light shielding electrode 157 in a region overlapping with the second gate electrode 168. The light shielding electrode 157 is disposed between the shielding electrode 126 and the fourth transparent resin layer 150d and is provided in contact with the shielding electrode 126. With such a structure, light incident from the transparent resin substrate 124 side is prevented from being incident on the channel region of the selection transistor 136. Thus, the variation of the threshold voltage of the selection transistor 136 is suppressed.

[0212] On the other hand, the driving transistor 138 has a dual gate structure in which the first oxide semiconductor layer 162a is sandwiched between the first gate electrode 154 and the second gate electrode 166. The first gate electrode 154 and the second gate electrode 166 are electrically connected and have the same potential, so that the current driving capability can be improved and a current sufficient to drive the organic EL element 134 can be supplied.

[0213] In this embodiment, the pixel 110d has the same configuration as the pixel 110a in the first embodiment except for the configuration of the shielding electrode 126 and the light shielding electrode 157. Therefore, the touch panel display according to this embodiment achieves the same operational effects as those of the first embodiment.

[0214] 5th embodiment:

[0215] This embodiment illustrates a configuration of a drive transistor and a select transistor that is different from the touch panel display of the first embodiment. Specifically, an example of using a polysilicon film to make a drive transistor and a select transistor is shown. In the following description, the description of the same parts as the first embodiment is omitted, and the description focuses on the different parts.

[0216] Fig. 27 An example of a planar structure of a pixel 110 e in the touch panel display according to the present embodiment is shown. Fig.28A Representation and Fig. 27 The cross-sectional structure of the pixel 110e corresponding to the line A9-A10 is shown. Fig.28B Representation and Fig. 27 The cross-sectional structure of the pixel 110e corresponding to the line B9-B10 is shown. In the following description, these drawings are appropriately referred to for description.

[0217] like Fig.28A and Fig.28B As shown, an organic EL element 134, a driving transistor 138, a selection transistor 136, and a capacitor 140 are arranged on a transparent resin substrate 124. The structure of the transparent resin substrate 124 is the same as that of the first embodiment.

[0218] like Fig. 27 and Fig.28A As shown, the driving transistor 138 includes a first semiconductor layer 163a. ​​The material of the first semiconductor layer 163a is a tetrahedral system semiconductor, for example, polysilicon is used. The first gate electrode 154 is arranged on the lower layer side of the first semiconductor layer 163a via the first insulating layer 158 and the fourth transparent resin layer 150d, and the second gate electrode 166 is arranged on the upper layer side via the second insulating layer 164. The structure of the first gate electrode 154 and the second gate electrode 166 is the same as that of the first embodiment. The first semiconductor layer 163a includes impurity regions 165a and 165b to which an impurity element for valence electron control is added. In the driving transistor 138, the impurity region 165a is connected to the second common wiring 146b, and the impurity region 165b is connected to the drain electrode 169b. The drain electrode 169b is electrically connected to the first electrode 180 of the organic EL element 134. The first electrode 180 is formed of a transparent conductive film. The third insulating layer 171 is provided between the second gate electrode 166 and the planarizing layer 172 . The second common wiring 146 b and the drain electrode 169 b are provided between the third insulating layer 171 and the planarizing layer 172 .

[0219] like Fig. 27 and Fig.28BAs shown, the selection transistor 136 includes a second semiconductor layer 163b. The second semiconductor layer 163b is also a tetrahedral semiconductor, for example, polysilicon. A first gate electrode 156 is arranged on the lower layer side of the second semiconductor layer 163b via a first insulating layer 158 and a fourth transparent resin layer 150d, and a second gate electrode 168 is arranged on the upper layer side via a second insulating layer 164. The impurity region 165c of the second semiconductor layer 163b is connected to the data signal line 144, and the impurity region 165d is connected to the drain electrode 169c.

[0220] The polycrystalline silicon film forming the semiconductor layer 163 is produced by crystallizing an amorphous silicon film produced by a plasma CVD method on the first insulating layer 158. The crystallization of the amorphous silicon film is performed by irradiating a laser (so-called laser annealing). As a laser source, an excimer laser, a third harmonic of a YAG laser, etc. can be used. The laser is ultraviolet light, which is basically absorbed by the amorphous silicon film, so the transparent resin substrate 124 is not thermally damaged.

[0221] The capacitor 140 is formed by a first capacitor electrode 170a formed on the same layer as the second gate electrode 168, a second capacitor electrode 170b formed on the same layer as the drain electrode 169c, and a third insulating layer 171 between the first capacitor electrode 170a and the second capacitor electrode 170b. The drain electrode 169c of the select transistor is electrically connected to the second capacitor electrode 170b. Fig. 27 and Fig.28B This shows a mode in which the drain electrode 169 c and the second capacitor electrode 170 b are formed of one continuous conductive layer.

[0222] like Fig.29A As shown, by further extending the impurity region 165d to the lower region of the first capacitor electrode 170a, the area of ​​the capacitor 140 can be expanded without reducing the aperture ratio of the pixel, thereby further increasing the capacitance. Fig.29B represents the equivalent circuit of the capacitor element 140. Fig.29B As shown in FIG. 1 , the capacitor element 140 has a structure in which a capacitor formed between the drain electrode 169c and the first capacitor electrode 170a, a capacitor formed between the impurity region 165d having the same potential as the drain electrode 169c and the first capacitor electrode 170a, and a capacitor formed between the impurity region 165d and the shielding electrode 126 having the same potential as the first capacitor electrode 170a are connected in parallel. With such a stacked structure, the capacitor element 140 has an increased capacitance even though the projected area is the same when viewed from above.

[0223] like Fig.28AAs shown, the organic EL element 134 has the same structure as that of the first embodiment. In this embodiment, the conductivity type of the driving transistor 138 and the selection transistor 136 is n-channel type. In other words, the impurity region 165 is an n-type semiconductor, so the conductivity type of the driving transistor 138 and the selection transistor 136 is n-channel type. Therefore, the touch panel display involved in this embodiment can operate in the same manner as the first embodiment.

[0224] The first gate electrode 154 of the driving transistor 138 is electrically connected to the second gate electrode 166, and the same gate voltage is applied to them. In this way, the driving transistor 138 has a dual-gate structure, so that the current driving capability is improved. Therefore, a current sufficient to drive the organic EL element 134 can be supplied. Assuming that the operating point of the organic EL element changes, constant current driving can also be performed corresponding to the change of the operating point. The first gate electrode 156 of the selection transistor 136 is electrically connected to the second gate electrode 168. The selection transistor 136 also has a dual-gate structure, so the change of the threshold voltage can be suppressed and the on-off ratio (on-off ratio) can be improved.

[0225] As shown in this embodiment, a touch panel display in which a touch sensor is embedded in a transparent resin substrate 124 can also be realized by using a transistor of polysilicon. A transistor in which a channel is formed on polysilicon can obtain a higher field effect mobility. Therefore, the current driving capability of the driving transistor 138 is improved, which is beneficial to the high precision of the pixel. The touch panel display involved in this embodiment has the same structure as the first embodiment except that the transistor is made of polysilicon. Thus, the same effect as the touch panel display involved in the first embodiment can be obtained.

[0226] 6th embodiment:

[0227] This embodiment exemplifies a pixel structure different from that of the fifth embodiment in a touch panel display having a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, portions different from the fifth embodiment are described.

[0228] Fig.30 An example of a planar structure of a pixel 110 f in the touch panel display according to the present embodiment is shown. Fig.31A Representation and Fig.30 The cross-sectional structure of the pixel 110f corresponding to the A11-A12 line is shown. Fig.31B Representation and Fig.30 The cross-sectional structure of the pixel 110f corresponding to the line B11-B12 is shown.

[0229] The pixel 110 f has the same configuration as that of the fifth embodiment, except that the first opening 152 a and the second opening 152 b are omitted and the shielding electrode 126 is provided on the entire surface.

[0230] The driving transistor 138 is provided with a light shielding electrode 155 in a region overlapping with the second gate electrode 166. The light shielding electrode 155 is disposed between the shielding electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shielding electrode 126. The light shielding electrode 155 is formed of a metal film as in the second embodiment. By providing the light shielding electrode 155, light incident from the transparent resin substrate 124 side is prevented from being incident on the channel region of the driving transistor 138. As a result, the variation of the threshold voltage of the driving transistor 138 is suppressed.

[0231] The light shielding electrode 155 is given the same potential as the shielding electrode 126. Since the shielding electrode 126 is given, for example, a ground potential, the light shielding electrode 155 is also at the same potential. A fixed voltage is given to the driving transistor 138 on the reverse channel side of the first semiconductor layer 163a in which a channel is formed via the first insulating layer 158. Thus, the variation of the threshold voltage of the driving transistor 138 is suppressed.

[0232] The selection transistor 136 is also provided with the light shielding electrode 157 similarly to the drive transistor 138. Therefore, the selection transistor 136 is shielded from light by the light shielding electrode 157, and the potential of the reverse channel is stabilized. Thus, the variation of the threshold voltage of the selection transistor 136 is suppressed.

[0233] In this embodiment, the pixel 110f has the same configuration as the pixel 110c in the fifth embodiment except for the configuration of the light shielding electrodes 155 and 157. Therefore, the touch panel display according to this embodiment achieves the same operational effects as those of the fifth embodiment.

[0234] Implementation 7:

[0235] This embodiment exemplifies a pixel structure different from that of the fifth embodiment in a touch panel display having a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, portions different from the fifth embodiment are described.

[0236] Fig.32 An example of a planar structure of a pixel 110g of the touch panel display according to the present embodiment is shown. Fig.33A Representation and Fig.32 The cross-sectional structure of the pixel 110g corresponding to the A13-A14 line shown. Fig.33B Representation and Fig.32 The cross-sectional structure of the pixel 110g corresponding to the line B13-B14 is shown.

[0237] The pixel 110g is provided in such a manner that the shielding electrode 126 covers the driving transistor 138. On the other hand, the second opening 152b is provided in the region where the selection transistor 136 is provided. The driving transistor 138 is provided with a light shielding electrode 155 in a region overlapping with the second gate electrode 166. The light shielding electrode 155 is disposed between the shielding electrode 126 and the fourth transparent resin layer 150d and is provided in contact with the shielding electrode 126. With such a structure, light incident from the transparent resin substrate 124 side is prevented from being incident on the channel region of the driving transistor 138.

[0238] The selection transistor 136 has a dual-gate structure in which the second semiconductor layer 163b is sandwiched between the first gate electrode 156 and the second gate electrode 168. As a result, the switching characteristics of the selection transistor 136 are improved and the off current can be reduced. In addition, since the first gate electrode 156 is a structure in which the first gate electrode layer 156a formed of a transparent conductive film and the first gate electrode layer 156b formed of a metal film are stacked, the selection transistor 136 also functions as a light shielding film.

[0239] In this embodiment, the pixel 110g has the same configuration as the pixel 110e in the fifth embodiment except for the configuration of the shielding electrode 126 and the light shielding electrode 155. Therefore, the touch panel display according to this embodiment achieves the same operational effects as those of the fifth embodiment.

[0240] 8th implementation method:

[0241] This embodiment exemplifies a pixel structure different from that of the fifth embodiment in a touch panel display having a touch sensor function for detecting a touch on the screen and a display function for displaying an image on the screen. In the following description, portions different from the fifth embodiment are described.

[0242] Fig.34 An example of a planar structure of a pixel 110h of the touch panel display according to the present embodiment is shown. Fig.35A Representation and Fig.34 The cross-sectional structure of the pixel 110h corresponding to the line A15-A16 is shown. Fig.35B Representation and Fig.34 The cross-sectional structure of the pixel 110h corresponding to the line B15-B16 is shown.

[0243] The pixel 110h is provided in such a manner that the shielding electrode 126 covers the selection transistor 136. On the other hand, the first opening 152a is provided in the region where the driving transistor 138 is provided. The selection transistor 136 is provided with a light shielding electrode 157 in the region overlapping with the second gate electrode 168. The light shielding electrode 157 is arranged between the shielding electrode 126 and the fourth transparent resin layer 150d, and is provided in contact with the shielding electrode 126. With such a structure, light incident from the transparent resin substrate 124 side is prevented from being incident on the channel region of the selection transistor 136. Thus, the variation of the threshold voltage of the selection transistor 136 is suppressed.

[0244] On the other hand, the driving transistor 138 has a double gate structure in which the first semiconductor layer 163a is sandwiched between the first gate electrode 154 and the second gate electrode 166. Since the first gate electrode 154 and the second gate electrode 166 are electrically connected and have the same potential, the current driving capability is improved, and a current sufficient to drive the organic EL element 134 can be supplied.

[0245] In this embodiment, the pixel 110h has the same configuration as the pixel 110e in the fifth embodiment except for the configuration of the shielding electrode 126 and the light shielding electrode 157. Therefore, the touch panel display according to this embodiment achieves the same operational effects as those of the fifth embodiment.

[0246] 9th embodiment:

[0247] This embodiment shows an example of a touch panel display in which the sensor electrodes embedded in the transparent resin substrate have a rhombus electrode shape. In the following description, the description of the same parts as the first and second embodiments is omitted, and the description will focus on the different parts.

[0248] Fig.36 The planar structure of the first sensor electrode 114 and the second sensor electrode 116 constituting the electrostatic capacitance type touch sensor of the mutual capacitance method is shown. The first sensor electrode 114 is a receiver electrode (Rx electrode) and outputs a detection signal (Vdet) in sequence. On the other hand, the second sensor electrode 116 is a transmitter electrode (Tx electrode) and is applied with a common drive signal (Vcom). The plurality of diamond-shaped electrodes in the first sensor electrode 114 are arranged in a direction ( Fig.36 The second sensor electrode 116 is connected in the Y direction, and the plurality of rhombus electrodes are connected in the direction intersecting with the one direction ( Fig.36 The two ends of the plurality of electrodes are connected in the X direction as shown. Fig.36Although not shown in the figure, the first sensor electrode 114 and the second sensor electrode 116 are arranged on different layers with an insulating layer interposed therebetween. The first sensor electrode 114 and the second sensor electrode 116 are formed of a transparent conductive film or a metal film. When a transparent conductive film is used, the first sensor electrode 114 and the second sensor electrode 116 are formed in a diamond-shaped full-surface pattern. On the other hand, when a metal film is used, they are formed in a mesh pattern with openings corresponding to the arrangement of pixels. In either case, the first sensor electrode 114 and the second sensor electrode 116 can be densely arranged by using diamond electrodes.

[0249] Fig.37A and Fig.37B Indicates that Fig.36 The illustrated example is an example of a pixel 110i of a touch panel display in which a rhombus-shaped electrode is embedded in a transparent resin substrate 124b. Fig.37A Representation and Figure 4 The cross-sectional structure corresponding to the A1-A2 line shown, Fig.37B Indicates along Figure 4 The cross-sectional structure along line B1-B2 is shown. Fig.37A The driving transistor 138 and the organic EL element 134 are shown, and Fig.37B The configurations of the selection transistor 136 and the capacitor 140 shown are the same as those in the first embodiment.

[0250] The transparent resin substrate 124b has a structure in which the first transparent resin layer 150a, the first sensor electrode 114, the inorganic insulating layer 151, the second sensor electrode 116, the third transparent resin layer 150c, the shielding electrode 126, and the fourth transparent resin layer 150d are stacked. When the full-surface pattern of the second sensor electrode 116 used as the transmitter electrode (Tx electrode) is overlapped with the driving transistor 138, it is preferable to provide an opening 119 in the second sensor electrode 116 corresponding to the configuration of the driving transistor 138. By providing the opening 119, the electric field generated by the driving signal applied to the second sensor electrode 116 does not affect the first gate electrode 154 of the driving transistor 138. In addition, in the present embodiment, in order to make the first gate electrode 154 away from the second sensor electrode 116, the film thickness of the third transparent resin layer 150c is 10 μm or more, preferably 15 μm or more.

[0251] The first sensor electrode 114 and the second sensor electrode 116 are provided with an inorganic insulating layer 151 therebetween to prevent a short circuit. As the inorganic insulating layer 151, it is preferable to use an insulating film such as a silicon nitride film or an aluminum oxide film that has a low water vapor permeability and is transparent to visible light. The inorganic insulating layer 151 may have a film thickness of 100 nm to 300 nm and is formed on substantially the entire surface of the transparent resin substrate 124b. By providing such an inorganic insulating layer 151 in the transparent resin substrate 124b, the barrier property to water vapor can be improved. Thus, the degradation of the organic EL element 134 provided on the transparent resin substrate 124b can be suppressed.

[0252] In addition, the dielectric constant of the silicon nitride film is 6 to 8, and the dielectric constant of the aluminum oxide film is 8 to 10, which are higher values ​​than the transparent resin layer (for example, the dielectric constant of the polyimide resin is 4 to 5). Furthermore, the inorganic insulating layer 151 is formed with a thickness of 100 nm to 300 nm, so that the capacitance formed between the first sensor electrode 114 and the second sensor electrode 116 can be increased. As a result, the sensitivity of the touch sensor 108 can be improved. In this way, the touch panel display involved in this embodiment can improve moisture resistance and improve the sensitivity of the touch sensor in addition to the effects achieved by the touch panel display involved in the first embodiment.

[0253] Fig.38A and Fig.38B Indicates that Fig.36 The illustrated example is an example of a pixel 110j of a touch panel display in which a rhombus-shaped electrode is embedded in a transparent resin substrate 124b. Fig.38A Representation and Fig.19 The cross-sectional structure corresponding to the A3-A4 line shown, Fig.38B Indicates along Fig.19 The cross-sectional structure along line B3-B4 is shown.

[0254] Fig.38A The driving transistor 138 and the organic EL element 134 are shown, and Fig.38B The configuration of the selection transistor 136 and the capacitor 140 shown in FIG. 1 is the same as that of the second embodiment. In addition, the transparent resin substrate 124 has a shielding electrode 126 disposed on substantially the entire surface. Fig.37A and Fig.37B Therefore, the touch panel display according to this embodiment can achieve the same effects as the touch panel display according to the second embodiment, and can also improve moisture resistance and the sensitivity of the touch sensor.

[0255] 10th embodiment:

[0256] This embodiment shows an example of a touch panel display in which the sensor electrodes embedded in the transparent resin substrate have a rhombus electrode shape. In the following description, the description of the same parts as the fifth and sixth embodiments is omitted, and the description will focus on the different parts.

[0257] Fig.39A and Fig.39B Indicates that Fig.36 The illustrated example is an example of a pixel 110k of a touch panel display in which a rhombus-shaped electrode is embedded in a transparent resin substrate 124b. Fig.39A Representation and Fig. 27 The cross-sectional structure corresponding to the A9-A10 line shown, Fig.39B Indicates along Fig. 27 The cross-sectional structure along line B9-B10 is shown. Fig.39A The driving transistor 138 and the organic EL element 134 are shown, and Fig.39B The configurations of the selection transistor 136 and the capacitor 140 shown are the same as those of the fifth embodiment.

[0258] The transparent resin substrate 124b has the same configuration as that of the ninth embodiment. Therefore, the touch panel display according to this embodiment can improve moisture resistance and sensitivity of the touch sensor 108 in addition to the effects achieved by the touch panel display according to the fifth embodiment.

[0259] Fig.40A and Fig.40B Indicates that Fig.36 The illustrated example is an example of a pixel 110m of a touch panel display in which a rhombus-shaped electrode is embedded in a transparent resin substrate 124b. Fig.40A Representation and Fig.30 The cross-sectional structure corresponding to the A11-A12 line shown, Fig.40B Indicates along Fig.30 The cross-sectional structure along line B11-B12 is shown.

[0260] Fig.40A The driving transistor 138 and the organic EL element 134 are shown, and Fig.40B The configuration of the selection transistor 136 and the capacitor 140 shown in the figure is the same as that of the sixth embodiment. In addition, the transparent resin substrate 124 has a shielding electrode 126 disposed on substantially the entire surface. Fig.39A and Fig.39B Therefore, the touch panel display according to this embodiment can achieve the same effects as the touch panel display according to the sixth embodiment, and can also improve moisture resistance and the sensitivity of the touch sensor.

[0261] 11th embodiment:

[0262] This embodiment shows one aspect of the first sensor electrodes 114 and the second sensor electrodes 116 constituting the touch sensor 108 .

[0263] Fig.41A An example of the first sensor electrode 114 is shown. Fig.41A The first sensor electrode 114 shown includes an electrode portion 121 and a connection portion 123. The electrode portion 121 is a portion extending from a first end of the display portion 102 along the data signal line 144 to a second end opposite to the first end, and the connection portion 123 is a portion connected to the second drive circuit 112b in an outer region of the display portion 102. The first sensor electrode 114 is formed of a metal film such as aluminum (Al), titanium (Ti), molybdenum (Mo), or copper (Cu). Fig.41A In the first sensor electrode 114 shown, the electrode portion 121 has a linear pattern, and the connection portion 123 is formed in a full-surface pattern (full metal). The pattern line width of the electrode portion 121 has a line width substantially the same as the line width of the data signal line 144 provided in the display portion 102, and is provided at substantially the same interval (or pitch) as the data signal line 144.

[0264] Fig.41B Another example of the first sensor electrode 114 is shown. Fig.41B The electrode portion 121 of the first sensor electrode 114 shown has a lattice pattern. The line width of the linear portion parallel to the gate signal line 142 in the lattice pattern of the electrode portion 121 is substantially the same as the line width of the gate signal line 142, and is arranged at substantially the same interval (or pitch) as the gate signal line 142. The line width of the linear portion parallel to the data signal line 144 in the lattice pattern of the electrode portion 121 has substantially the same line width as the line width of the data signal line 144, and is arranged at substantially the same interval (or pitch) as the data signal line 144. Alternatively, the line width of the linear portion parallel to the gate signal line 142 in the lattice pattern of the electrode portion 121 may be substantially the same as the line width of the gate signal line 142, and may be arranged at substantially the same interval (or pitch) as the gate signal line 142, and the line width of the linear portion parallel to the data signal line 144 may be substantially the same as the line width of the data signal line 144, and may be arranged at three times the interval (or three times the pitch) of the data signal line 144.

[0265] Fig.42A An example of the second sensor electrode 116 is shown. Fig.42AThe second sensor electrode 116 shown includes an electrode portion 125 and a connection portion 127. The electrode portion 125 is a portion extending from a first end along the gate signal line 142 of the display unit 102 to a second end opposite to the first end, and the connection portion 127 is a portion connected to the third driving circuit 112c in the outer region of the display unit 102. The second sensor electrode 116 is formed of a metal film such as aluminum (Al), titanium (Ti), molybdenum (Mo), or copper (Cu). Fig.42A In the second sensor electrode 116 shown, the electrode portion 125 has a linear pattern, and the connection portion 127 is formed in a full-surface pattern (full metal). The pattern line width of the electrode portion 125 has a line width substantially the same as that of the gate signal line 142 provided in the display portion 102, and is provided at substantially the same interval (or pitch) as the gate signal line 142.

[0266] Fig.42B Another example of the second sensor electrode 116 is shown. Fig.42B The electrode portion 125 of the second sensor electrode 116 shown has a lattice pattern. The line width of the linear portion parallel to the gate signal line 142 in the lattice pattern of the electrode portion 125 is substantially the same as the line width of the gate signal line 142, and is arranged at substantially the same interval (or pitch) as the gate signal line 142. The line width of the linear portion parallel to the data signal line 144 in the lattice pattern of the electrode portion 125 has substantially the same line width as the line width of the data signal line 144, and is arranged at substantially the same interval (or pitch) as the data signal line 144. Alternatively, the line width of the linear portion parallel to the gate signal line 142 in the lattice pattern of the electrode portion 125 may be substantially the same as the line width of the gate signal line 142, and may be arranged at substantially the same interval (or pitch) as the gate signal line 142, and the line width of the linear portion parallel to the data signal line 144 may have substantially the same line width as the line width of the data signal line 144, and may be arranged at three times the interval (or three times the pitch) of the data signal line 144.

[0267] exist Fig.41A , Fig.41B , Fig.42A ,and Fig.42B In the case shown, the first sensor electrode 114 and the second sensor electrode 116 are embedded in the transparent resin substrate 124. Therefore, for example, an alignment mark may be formed using a metal film used when the first sensor electrode 114 and the second sensor electrode 116 are formed. In a subsequent process, the alignment mark is used to align a photomask used when forming the data signal line 144, so that the positions of the first sensor electrode 114 and the data signal line 144 can be precisely aligned.

[0268] The first sensor electrodes 114 and the second sensor electrodes 116 shown in this embodiment are formed with the same line width and the same pitch as the gate signal lines 142 and the data signal lines 144, so that even in a bottom emission type touch panel display, the touch sensor 108 can be embedded in the transparent resin substrate 124 without reducing the aperture ratio of the pixel. In addition, by forming the first sensor electrodes 114 and the second sensor electrodes 116 with a metal material, low resistance can be achieved.

[0269] This embodiment can be implemented in combination with the touch sensor of the touch panel display according to any of the first to tenth embodiments as appropriate.

[0270] 12th embodiment:

[0271] This embodiment shows one aspect of the first sensor electrodes 114 and the second sensor electrodes 116 constituting the touch sensor 108 .

[0272] Fig.43A An example of the first sensor electrode 114 is shown. Fig.43A The first sensor electrode 114 shown includes an electrode portion 121 having a diamond-shaped electrode pattern and a connection portion 123 provided at one end of the electrode portion 121. The electrode portion 121 is a portion extending from a first end of the display portion 102 along the data signal line 144 to a second end opposite to the first end, and the connection portion 123 is a portion connected to the second driving circuit 112b in an outer region of the display portion 102. Fig.43A In the first sensor electrode 114 shown, the electrode portion 121 has a linear pattern, and the connection portion 123 is formed in a full-surface pattern (full metal). The line width of the pattern of the electrode portion 121 has a line width substantially the same as that of the data signal line 144 provided in the display portion 102, and is provided at substantially the same interval (or pitch) as the data signal line 144.

[0273] Fig.43B Another example of the first sensor electrode 114 is shown. Fig.43BThe electrode portion 121 of the first sensor electrode 114 shown has a lattice pattern. The line width of the linear portion parallel to the gate signal line 142 in the lattice pattern of the electrode portion 121 is substantially the same as the line width of the gate signal line 142, and is arranged at substantially the same interval (or pitch) as the gate signal line 142. The line width of the linear portion parallel to the data signal line 144 in the lattice pattern of the electrode portion 121 has substantially the same line width as the line width of the data signal line 144, and is arranged at substantially the same interval (or pitch) as the data signal line 144. Alternatively, the line width of the linear portion parallel to the gate signal line 142 in the lattice pattern of the electrode portion 121 may be substantially the same as the line width of the gate signal line 142 and may be arranged at substantially the same interval (or pitch) as the gate signal line 142, and the line width of the linear portion parallel to the data signal line 144 may be substantially the same as the line width of the data signal line 144 and may be arranged at three times the interval (or three times the pitch) of the data signal line 144.

[0274] Fig.44A An example of the second sensor electrode 116 is shown. Fig.44A The second sensor electrode 116 shown includes an electrode portion 125 having a diamond-shaped electrode pattern and a connecting portion 127. The electrode portion 125 is a portion extending from a first end of the display portion 102 along the gate signal line 142 to a second end opposite to the first end, and the connecting portion 127 is a portion connected to the third driving circuit 112c in an outer region of the display portion 102. Fig.44A In the second sensor electrode 116 shown, the electrode portion 125 has a linear pattern, and the connection portion 127 is formed in a full-surface pattern (full metal). The pattern line width of the electrode portion 125 has a line width substantially the same as that of the gate signal line 142 provided in the display portion 102, and is provided at substantially the same interval (or pitch) as the gate signal line 142.

[0275] Fig.44B Another example of the second sensor electrode 116 is shown. Fig.44BThe electrode portion 125 having a diamond-shaped electrode pattern in the second sensor electrode 116 shown has a lattice pattern. The line width of the linear portion parallel to the gate signal line 142 in the lattice pattern of the electrode portion 125 is substantially the same as the line width of the gate signal line 142, and is arranged at substantially the same interval (or pitch) as the gate signal line 142. The line width of the linear portion parallel to the data signal line 144 in the lattice pattern of the electrode portion 125 is substantially the same as the line width of the data signal line 144, and is arranged at substantially the same interval (or pitch) as the data signal line 144. Alternatively, the line width of the linear portion parallel to the gate signal line 142 in the lattice pattern of the electrode portion 125 may be substantially the same as the line width of the gate signal line 142, and may be arranged at substantially the same interval (or pitch) as the gate signal line 142, and the line width of the linear portion parallel to the data signal line 144 may have substantially the same line width as the line width of the data signal line 144, and may be arranged at three times the interval (or three times the pitch) of the data signal line 144.

[0276] In this embodiment, the first sensor electrode 114 and the second sensor electrode 116 are formed of a metal film such as aluminum (Al), titanium (Ti), molybdenum (Mo), or copper (Cu). Thus, the first sensor electrode 114 and the second sensor electrode 116 can have a low resistance. In addition, as in the eleventh embodiment, when the first sensor electrode 114 and the second sensor electrode 116 are manufactured, alignment marks can be made on the transparent resin substrate 124, thereby improving the alignment accuracy with the gate signal line 142 and the data signal line 144.

[0277] The first sensor electrodes 114 and the second sensor electrodes 116 shown in this embodiment are formed with the same line width and the same pitch as the gate signal lines 142 and the data signal lines 144. Therefore, even in a bottom emission type touch panel display, the touch sensor 108 can be embedded in the transparent resin substrate 124 without reducing the aperture ratio of the pixel. In addition, by forming the first sensor electrodes 114 and the second sensor electrodes 116 with a metal material, low resistance can be achieved.

[0278] This embodiment can be implemented in combination with the touch sensor of the touch panel display according to any of the first to tenth embodiments as appropriate.

[0279] 13th embodiment:

[0280] This embodiment is an aspect of the first sensor electrodes 114 and the second sensor electrodes 116 constituting the touch sensor 108 , and shows a configuration corresponding to a pixel arrangement of a diamond-shaped Pen Tile.

[0281] Fig.45A An example of the first sensor electrode 114 is shown. Fig.45AThe first sensor electrode 114 shown has a strip-shaped form formed by a metal film, and includes a connection portion 123 and an electrode portion 121. The electrode portion 121 has a mesh pattern corresponding to the pixels of the diamond PenTile arrangement. The metal mesh is arranged corresponding to the non-luminous area in the pixel arrangement. The connection portion 123 is formed by a full-surface pattern (full metal) of the metal film. Fig.45B In FIG. 1 , the electrode portion 121 of the first sensor electrode 114 has a rhombus-shaped electrode pattern and has a mesh pattern corresponding to pixels of the rhombus-shaped PenTile arrangement.

[0282] Fig.46A An example of the second sensor electrode 116 is shown. Fig.46A The first sensor electrode 114 shown has a strip-shaped form formed by a metal film, and includes a connection portion 127 and an electrode portion 125. The electrode portion 125 has a mesh pattern corresponding to the pixels of the diamond PenTile arrangement. The metal mesh is arranged corresponding to the non-luminous area in the pixel arrangement. The connection portion 127 is formed by a full-surface pattern (full metal) of the metal film. Fig.46B In FIG. 1 , the electrode portion 125 of the second sensor electrode 116 has a rhombus-shaped electrode pattern and has a mesh pattern corresponding to pixels of the rhombus-shaped PenTile arrangement.

[0283] The mesh pattern of the electrode portions 121 and 125 may have an opening pattern that surrounds a group of two sub-pixels corresponding to green, one sub-pixel corresponding to red, and one sub-pixel corresponding to blue (a group of sub-pixels). In addition, the mesh pattern may have an opening pattern that includes four or nine sub-pixels in the group.

[0284] Fig.45A The first sensor electrode 114 shown, Fig.46A The second sensor electrode 116 shown is arranged in an overlapping manner across an insulating layer. In this case, the mesh pattern of the electrode portion 121 of the first sensor electrode 114 and the mesh pattern of the electrode portion 125 of the second sensor electrode 116 may also be arranged in an overlapping manner. Alternatively, the mesh pattern of the electrode portion 121 and the mesh pattern of the electrode portion 125 may also be staggered from each other. In either case, by configuring the mesh pattern so that it does not overlap with the light-emitting area of ​​the pixel, the aperture ratio of the pixel can be kept from decreasing. In addition, by surrounding the pixel with a metal mesh pattern, it functions as a light-shielding film (also called a black matrix), thereby improving the image quality.

[0285] This embodiment can be implemented in combination with the touch sensor of the touch panel display according to any of the first to tenth embodiments as appropriate.

[0286] 14th embodiment:

[0287] This embodiment shows one aspect of the connection structure of the first sensor electrode 114 , the second sensor electrode 116 , and the lead wiring.

[0288] Fig.47A An example of a connection structure between the first sensor electrode 114 and the first lead wiring 194a is shown. The first sensor electrode 114 is connected to the first lead wiring 194a in the outer region of the display unit 102. The first sensor electrode 114 is provided between the first transparent resin layer 150a and the second transparent resin layer 150b, and the first lead wiring 194a is provided on the upper layer side of the fourth transparent resin layer 150d.

[0289] like Fig.47A As shown in FIG. 1 , the first insulating layer 158, the second insulating layer 164, and the planarizing layer 172 are stacked on the fourth transparent resin layer 150d, and the second electrode 192 is provided on the planarizing layer 172. Fig.47A The embodiment shows a state in which a sealing layer 128 is provided on the upper side of the second electrode 192. The configuration of the sealing layer 128 is arbitrary, and the present embodiment shows a structure in which a carbon nitride film 196a, a silicon nitride film 198, and a carbon nitride film 196b are stacked in sequence. The carbon nitride film 196 is a polymer film produced by a plasma polymerization film forming method using hydrocarbon gas such as methane (CH4), nitrogen (N2), or ammonia (NH3) as raw material gas. On the other hand, the silicon nitride film 198 is produced by a plasma CVD method using silane (SiH4), ammonia (NH3), and nitrogen (N2) as raw material gas. Plasma polymerization films such as the carbon nitride film 196 have the characteristics of no pinholes, excellent step coverage, and low internal stress. By combining such a carbon nitride film 196 and a silicon nitride film 198, a sealing layer 128 with excellent water vapor barrier properties can be obtained.

[0290] The first lead wiring 194a is electrically connected to the first sensor electrode 114 through the contact hole 195 penetrating the second transparent resin layer 150b, the third transparent resin layer 150c, and the fourth transparent resin layer 150d. The first lead wiring 194a is led out to the outside of the planarization layer 172 and the sealing layer 128. The first lead wiring 194a is formed in a region exposed from the sealing layer 128 so as to be continuous with the terminal electrode 118.

[0291] Fig.47AThe present invention shows a state in which a transparent resin substrate 124 is provided on a supporting substrate 200, and a dividing region 202 is provided near a terminal electrode 118. The dividing region 202 is a groove penetrating the transparent resin substrate 124. Such a dividing region 202 is produced, for example, by laser processing. The dividing region 202 is formed as an open groove that is continuous in a manner of surrounding a display panel. After the dividing region 202 is formed, the transparent resin substrate 124 can be peeled off from the supporting substrate 200 by performing laser ablation as described in the first embodiment.

[0292] The first transparent resin layer 150a is preferably formed of a transparent polyimide resin. Transparent polyimide resin is softer and more heat-resistant than transparent para-polyamide resin, and thus has the advantage that no deteriorated layer will be generated even if laser ablation is performed. On the other hand, the fourth transparent resin layer 150d is preferably formed of a transparent para-polyamide resin. The first lead wiring 194a, Figure 1 The transparent polyamide resin is harder than the polyimide resin and can prevent the metal film forming the first lead wiring 194a and the terminal electrode 118 from peeling off. Figure 1 The flexible printed wiring board 122 shown can also suppress deformation of the transparent resin substrate 124.

[0293] Fig.47B An example of a connection structure between the second sensor electrode 116 and the second lead wiring 194b is shown. The second sensor electrode 116 is connected to the second lead wiring 194b in the outer region of the display unit 102. The second sensor electrode 116 is provided between the second transparent resin layer 150b and the third transparent resin layer 150c, and the second lead wiring 194b is provided on the upper layer side of the fourth transparent resin layer 150d. From the viewpoint of gas barrier properties to prevent water vapor penetration, the fourth transparent resin layer 150d is preferably made of a transparent para-type polyamide resin.

[0294] The second lead wiring 194b is electrically connected to the second sensor electrode 116 through the second contact hole 195b that passes through the third transparent resin layer 150c and the fourth transparent resin layer 150d. The second lead wiring 194b is led out onto the second insulating layer 164 to be connected to the third driving circuit 112c. Fig.47B In the figure, the third driving circuit 112c is omitted.

[0295] like Fig.48A As shown in FIG. 1 , the first insulating layer 158 and the second insulating layer 164 may also be extended to the outside of the planarization layer 172. According to such a structure, Fig.48BAs shown, in the region where the first lead wiring 194a is not provided, the second insulating layer 164 formed of an inorganic insulating film is provided in close contact with the sealing layer 128 formed of an inorganic insulating film. On the outer side of the planarization layer 172, the second insulating layer 164 is in close contact with the sealing layer 128, thereby preventing the penetration of moisture and the like, and improving the sealing capability.

[0296] In addition, if Fig.49 As shown, the first lead wiring 194a may be electrically connected to the second lead wiring 194b (wiring formed by the transparent conductive film 194b1 and the metal film 194b2) through the third contact hole 195c formed in the second insulating layer 164, the first insulating layer 158, and the fourth transparent resin layer 150d, the second lead wiring 194b may be electrically connected to the lead wiring 194c through the second contact hole 195b formed in the third transparent resin layer 150c, and the lead wiring 194c may be electrically connected to the first sensor electrode 114 through the first contact hole 195a formed in the second transparent resin layer 150b. In this way, the lead wiring 194 is connected in multiple stages through the contact holes formed in each layer of the transparent resin layer 150, and the depth of the contact hole in each stage can be made shallow, thereby accurately forming an electrical connection.

[0297] According to this embodiment, even when the first sensor electrode 114 and the second sensor electrode 116 constituting the touch sensor 108 are embedded in the transparent resin substrate, by providing a contact hole 195 that passes through the transparent resin layer, the lead wiring 194 can be led out to a higher layer, thereby being connected to the terminal electrode 118 and the driving circuit 112.

[0298] Notes

[0299] All or part of the exemplary embodiments disclosed above may be described as the following supplementary explanation, but an embodiment of the present invention is not limited thereto.

[0300] Note 1

[0301] A method for manufacturing a touch panel display comprises the following steps:

[0302] forming a transparent resin substrate including a touch sensor composed of a first sensor electrode extending in a first direction and a second sensor electrode extending in a second direction intersecting the first direction,

[0303] forming a shielding electrode covering the touch sensor,

[0304] A display unit in which pixels are arranged is formed on the transparent resin substrate. The pixels include transistors and organic electroluminescent elements electrically connected to the transistors.

[0305] Note 2

[0306] The method for manufacturing a touch panel display as described in Note 1, wherein forming the transparent resin substrate comprises the following steps:

[0307] forming a first transparent resin layer on a supporting substrate,

[0308] forming a first sensor electrode extending in a first direction on the first transparent resin layer,

[0309] forming a second transparent resin layer on the first transparent resin layer and the first sensor electrode,

[0310] forming a second sensor electrode extending in a second direction intersecting the first direction on the second transparent resin layer,

[0311] forming a third transparent resin layer on the second transparent resin layer and the second sensor electrode,

[0312] forming the shielding electrode on the third transparent resin layer,

[0313] A fourth transparent resin layer is formed on the shielding electrode.

[0314] Note 3

[0315] The method for manufacturing a touch panel display as described in Appendix 2, wherein:

[0316] The first transparent resin layer, the second transparent resin layer, the third transparent resin layer, and the fourth transparent resin layer are formed of a transparent para-polyamide resin or a transparent polyimide resin.

[0317] Note 4

[0318] The method for manufacturing a touch panel display as described in Appendix 2, wherein:

[0319] The first transparent resin layer is formed of a transparent polyimide resin, the fourth transparent resin layer is formed of a transparent para-type resin, and the second transparent resin layer and the third transparent resin layer are formed of a transparent para-type polyamide resin or a transparent polyimide resin.

[0320] Note 5

[0321] The method for manufacturing a touch panel display as described in Appendix 2, wherein:

[0322] The first transparent resin layer and the third transparent resin layer are formed of a para-polyamide resin or a polyimide resin, and the second transparent resin layer is formed of a silicon nitride film or an aluminum oxide film.

[0323] Note 6

[0324] The method for manufacturing a touch panel display according to Appendix 1, wherein:

[0325] The first sensor electrode and the second sensor electrode are formed using a transparent conductive film.

[0326] Note 7

[0327] The method for manufacturing a touch panel display according to Appendix 1, wherein:

[0328] The first sensor electrode and the second sensor electrode are formed of a transparent conductive film and are formed in a stripe-shaped or mesh-shaped pattern having openings at positions overlapping with the pixels.

[0329] Note 8

[0330] The method for manufacturing a touch panel display according to Appendix 1, wherein:

[0331] The shielding electrode is formed using a transparent conductive film.

[0332] Note 9

[0333] The method for manufacturing a touch panel display according to Appendix 1, wherein:

[0334] The transistor is formed by a first gate electrode, a first insulating layer on the first gate electrode, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer, and a second gate electrode on the second insulating layer.

[0335] Note 10

[0336] The method for manufacturing a touch panel display as described in Appendix 9, wherein:

[0337] An opening portion overlapping with the transistor is formed in the shielding electrode,

[0338] The first gate electrode is formed inside the opening.

[0339] Note 11

[0340] The method for manufacturing a touch panel display as described in Appendix 9, wherein:

[0341] The first gate electrode is formed in contact with the shield electrode.

[0342] Note 12

[0343] The method for manufacturing a touch panel display as described in Appendix 10, wherein:

[0344] The opening of the shield electrode and the first gate electrode are patterned using one photomask.

[0345] Note 13

[0346] The method for manufacturing a touch panel display according to Appendix 12, wherein:

[0347] A multi-grayscale mask is used as the photomask.

[0348] Note 14

[0349] The method for manufacturing a touch panel display as described in Appendix 2, wherein:

[0350] The second sensor electrode has an opening formed in a region overlapping with the transistor.

[0351] Note 15

[0352] A touch panel display, characterized by having:

[0353] The display part is equipped with image signal lines and scanning signal lines;

[0354] A touch sensor is provided with a first sensor electrode (receiver electrode) and a second sensor electrode (transmitter electrode); and

[0355] A driving circuit is arranged outside the display unit and the touch sensor; and

[0356] The driving circuit comprises:

[0357] An image signal driving circuit outputs an image signal to the image signal line;

[0358] A scanning signal line driving circuit outputs a timing signal synchronized with the image signal to the scanning signal line;

[0359] a sensing circuit that receives the detection signal output from the first sensor electrode (receiver electrode) and outputs a sensing signal; and

[0360] a scanning circuit that outputs a driving signal to the second sensor electrode (transmitter electrode);

[0361] The driving circuit integrates the image signal driving circuit, the scanning signal driving circuit, the sensing circuit, and the scanning circuit.

[0362] Note 16

[0363] The touch panel display as described in Supplementary Note 15, wherein:

[0364] The driving circuit is integrated on a single semiconductor chip.

[0365] Note 17

[0366] The touch panel display as described in Supplementary Note 15, wherein:

[0367] The image signal driving circuit, the scanning signal driving circuit, the sensing circuit, and the scanning circuit are integrated into blocks in the driving circuit.

[0368] Note 18

[0369] The touch panel display as described in Supplementary Note 15, wherein:

[0370] The display unit is provided with a plurality of pixels arranged therein.

[0371] The plurality of pixels each include an organic EL element.

Claims

1. A touch panel display, comprising: - A touch sensor comprising a first sensor electrode and a second sensor electrode; - a display portion, overlapping the touch sensor, and having a plurality of pixels arranged therein; - a driving circuit, driving the touch sensor and the display unit; - a first transparent insulating layer, covering the touch sensor; - a second transparent insulating layer, disposed between the touch sensor and the display portion; as well as - a first inorganic insulating layer, sandwiched between the touch sensor, the display unit and the drive circuit, and facing the first transparent insulating layer; in, - the first sensor electrode is composed of a plurality of diamond-shaped electrode patterns arranged along a first direction and electrically connected; - the second sensor electrode is composed of a plurality of diamond-shaped electrode patterns arranged along a second direction intersecting the first direction and electrically connected; - the first sensor electrode and the second sensor electrode are electrically connected to the lead wiring through a contact hole penetrating the second transparent insulating layer; - The contact hole is sandwiched between the first transparent insulating layer and the first inorganic insulating layer.

2. The touch panel display according to claim 1, wherein: - The first inorganic insulating layer includes at least one silicon nitride layer.

3. The touch panel display according to claim 1, wherein: The first sensor electrode and the second sensor electrode have a region intersecting with a second inorganic insulating layer.

4. The touch panel display according to claim 1, wherein: The plurality of rhombus-shaped electrode patterns of the first sensor electrode and the plurality of rhombus-shaped electrode patterns of the second sensor electrode have mesh-like opening patterns.

5. The touch panel display according to claim 4, wherein: - The mesh-like opening pattern is configured to correspond to each of the plurality of pixels.

6. The touch panel display according to claim 4, wherein: - the plurality of pixels are arranged in a diamond-shaped PenTile; -The mesh-like opening pattern is configured to correspond to the diamond-shaped PenTile arrangement.

7. The touch panel display according to claim 5, wherein: - Each of the plurality of pixels comprises an organic electroluminescent element.

8. The touch panel display according to claim 1, wherein: - Each of the first sensor electrode and the second sensor electrode includes: an electrode portion consisting of the plurality of diamond-shaped electrode patterns, and a connection portion consisting of a solid pattern located outside the display portion.

9. The touch panel display according to claim 1, wherein: - A transparent shielding electrode is included between the touch sensor and the display portion.

10. The touch panel display according to claim 9, wherein: - Each of the plurality of pixels comprises an organic electroluminescent element and a transistor connected to the organic electroluminescent element; The transparent shielding electrode has a light shielding region in a region overlapping with the transistor.

11. The touch panel display according to claim 10, wherein: - The light shielding area is a metal layer and is in contact with the transparent shielding electrode.

12. The touch panel display according to claim 9, wherein: - Each of the plurality of pixels comprises an organic electroluminescent element and a transistor connected to the organic electroluminescent element; The transparent shielding electrode has an opening in a region overlapping with the transistor.

13. The touch panel display according to claim 12, wherein: - the transistor comprises: a first gate electrode, a second gate electrode having a region overlapping with the first gate electrode, and a semiconductor layer located between the first gate electrode and the second gate electrode; The first gate electrode includes a conductive layer that is the same layer as the transparent shielding electrode, and is disposed in the opening.

14. The touch panel display according to claim 12, wherein: The first sensor electrode is a receiver electrode, the second sensor electrode is a transmitter electrode, and the transmitter electrode has a second opening in a region overlapping the opening.

15. The touch panel display according to claim 13, wherein: - The first gate electrode and the second gate electrode are electrically connected outside the semiconductor layer.

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