A silicon-based OLED structure and preparation method thereof

Abstract

The present invention provides a silicon-based OLED structure and a preparation method thereof, belonging to the field of semiconductor technology. It includes a silicon-based substrate, an anode layer, a pixel definition layer, a packaging layer, an OC flat layer and a color filter layer which are stacked in sequence; the pixel definition layer is arranged at intervals on the surface of the anode layer, and the intervals of the pixel definition layer are filled with an OLED light-emitting device layer; each color filter of the color filter layer is embedded in a BM barrier layer, and the material of the BM barrier layer is a material with high reflectivity and high thermal conductivity; it also includes a heat dissipation ring, which is located in the non-display area on the upper surface of the OC flat layer. The present invention adds a BM barrier layer on the upper surface of the OC flat layer, and adds a heat dissipation ring in the non-display area. The BM barrier layer is used to block the crosstalk phenomenon generated when light is emitted. At the same time, due to the material of the BM barrier layer, the heat generated when the device is working is introduced into the heat dissipation ring position at the edge of the device, thereby improving the life of the device.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a silicon-based OLED structure and a preparation method thereof. Background Art

[0002] Existing silicon-based OLED screens have a serious screen light leakage problem. Due to the design of the underlying anode structure, crosstalk will occur when the pixel passes through the upper color filter during operation. For example, the light emitted by the pixel enters from the R film layer but is emitted from the G film layer, and the emitted light produces crosstalk, that is, crosstalk occurs, resulting in color deviation of the final light output effect. At the same time, when the silicon-based OLED device is working under the application of an external voltage, the device itself generates heat and due to the material reason, the heat cannot be dissipated in time, resulting in continuous accumulation of heat in the device, and eventually overheating causes device damage and reduced lifespan. Summary of the invention

[0003] In view of this, the object of the present invention is to provide a silicon-based OLED structure and a preparation method thereof. The silicon-based OLED structure provided by the present invention adds a BM barrier layer 116 and a heat dissipation ring 117 to the upper surface of the OC flat layer 115 and the non-display (AA) area. The BM barrier layer 116 is used to block the crosstalk phenomenon generated when light is emitted. At the same time, due to the material of the BM barrier layer 116, the heat generated when the device is working is quickly introduced to the heat dissipation ring 117 position at the edge of the device, which increases the rate and area of ​​heat dissipation, improves the light crosstalk problem of the device and increases the life of the device.

[0004] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0005] The present invention provides a silicon-based OLED structure, comprising a silicon-based substrate 110, an anode layer 111, a pixel definition layer 112, an encapsulation layer 114, an OC flat layer 115 and a color filter layer 118, which are stacked in sequence;

[0006] The pixel definition layers 112 are arranged at intervals on the surface of the anode layer 111, and the intervals between the pixel definition layers 112 are filled with an OLED light emitting device layer 113;

[0007] Each color filter of the color filter layer 118 is embedded in the BM barrier layer 116 respectively. The material of the BM barrier layer 116 is a material with high reflectivity and high thermal conductivity. The reflectivity of the material is greater than 60%, and the thermal conductivity is greater than 9W / (m·K);

[0008] The OC flat layer 115 further includes a heat dissipation ring 117 , which is located in a non-display area on the upper surface of the OC flat layer 115 .

[0009] Preferably, the BM barrier layer 116 has a thickness of 300-1000 nm.

[0010] Preferably, the heat dissipation ring 117 is made of titanium nitride or tantalum nitride.

[0011] Preferably, the heat dissipation ring 117 has a thickness of 300-1000 nm.

[0012] Preferably, the heat dissipation ring 117 and the BM barrier layer 116 have the same thickness.

[0013] Preferably, the color filter layer 118 has a thickness of 500-1500 nm.

[0014] Preferably, the thickness of the OC planar layer 115 is 300-1000 nm.

[0015] Preferably, the encapsulation layer 114 has a thickness of 500-1000 nm.

[0016] Preferably, the pixel definition layer 112 has a thickness of 100-400 nm.

[0017] The present invention also provides a method for preparing the silicon-based OLED structure described in the above technical solution, comprising the following steps:

[0018] Deposition is performed on the upper surface of the silicon-based substrate 110 to obtain an anode layer 111;

[0019] Deposition is performed on the upper surface of the anode layer 111 to obtain a pixel definition layer 112, and then an OLED light emitting device layer 113 is formed;

[0020] Deposition is performed on the upper surfaces of the pixel definition layer 112 and the OLED light emitting device layer 113 to obtain an encapsulation layer 114;

[0021] Deposition is performed on the upper surface of the encapsulation layer 114 to obtain an OC flat layer 115;

[0022] The upper surface of the OC flat layer 115 is deposited and then etched to obtain a BM barrier layer 116, and then the non-display area of ​​the upper surface of the OC flat layer 115 is deposited and then etched to obtain a heat dissipation ring 117, and then a color filter layer 118 is prepared to obtain the silicon-based OLED structure.

[0023] The present invention provides a silicon-based OLED structure, comprising a silicon-based substrate 110, an anode layer 111, a pixel definition layer 112, an encapsulation layer 114, an OC flat layer 115 and a color filter layer 118 which are stacked in sequence; the pixel definition layers 112 are arranged at intervals on the surface of the anode layer 111, and the intervals of the pixel definition layers 112 are filled with an OLED light-emitting device layer 113; each color filter of the color filter layer 118 is respectively embedded in a BM barrier layer 116, and the material of the BM barrier layer 116 is a material with high reflectivity and high thermal conductivity, the reflectivity of the material is greater than 60%, and the thermal conductivity is greater than 9W / (m·K); and also includes a heat dissipation ring 117, which is located in a non-display area on the upper surface of the OC flat layer 115.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] The silicon-based OLED structure provided by the present invention adds a BM barrier layer 116 and a heat dissipation ring 117 to the upper surface of the OC flat layer 115, and the BM barrier layer 116 is used to block the crosstalk phenomenon generated when light is emitted, so that when light is emitted by the silicon-based OLED device, the color deviation phenomenon is reduced, and the viewing angle of the entire crosstalk is also reduced due to the addition of the BM barrier layer 116, and the overall color deviation range is also improved. At the same time, because the material of the BM barrier layer 116 is a material with high thermal conductivity, the heat generated by the device during operation is quickly introduced into the heat dissipation ring 117 at the edge of the device, which increases the rate and area of ​​heat dissipation, improves the light crosstalk problem of the device and increases the life of the device.

[0026] The present invention also provides a method for preparing the silicon-based OLED structure described in the above technical solution. The preparation method of the present invention is simple to operate and is suitable for industrial production. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a cross-sectional view of the silicon-based OLED structure of the present invention;

[0028] Figure 2 A top view of the silicon-based OLED structure of the present invention;

[0029] Figures 3 to 11 A flow chart for preparing a silicon-based OLED structure for the present invention;

[0030] Among them, 110 is a silicon-based substrate, 111 is an anode layer, 112 is a pixel definition layer, 113 is an OLED light-emitting device layer, 114 is an encapsulation layer, 115 is an OC flat layer, 116 is a BM barrier layer, 117 is a heat dissipation ring, and 118 is a color filter layer. DETAILED DESCRIPTION

[0031] The present invention provides a silicon-based OLED structure, comprising a silicon-based substrate 110, an anode layer 111, a pixel definition layer 112, an encapsulation layer 114, an OC flat layer 115 and a color filter layer 118, which are stacked in sequence;

[0032] The pixel definition layers 112 are arranged at intervals on the surface of the anode layer 111, and the intervals between the pixel definition layers 112 are filled with an OLED light emitting device layer 113;

[0033] Each color filter of the color filter layer 118 is embedded in the BM barrier layer 116 respectively. The material of the BM barrier layer 116 is a material with high reflectivity and high thermal conductivity. The reflectivity of the material is greater than 60%, and the thermal conductivity is greater than 9W / (m·K);

[0034] The OC flat layer 115 further includes a heat dissipation ring 117 , which is located in a non-display area on the upper surface of the OC flat layer 115 .

[0035] Unless otherwise specified, the present invention has no special restrictions on the materials of the various layers of the silicon-based OLED structure, and any material familiar to those skilled in the art may be used. For example, the material of the anode layer 111 may be Ti, Al or TiN, the material of the pixel definition layer 112 may be SiNx, the material of the OLED light-emitting device layer 113 may be a common vapor deposition device material, and the material of the encapsulation layer 114 may be Al. 2 O 3 、TiO 2 Or SiNx, the material of the OC flat layer 115 is PR glue, and the material of the color filter layer 118 is photoresist.

[0036] Figure 1 is a cross-sectional view of the silicon-based OLED structure of the present invention, Figure 2 1 is a top view of the silicon-based OLED structure of the present invention, wherein 110 is a silicon-based substrate, 111 is an anode layer, 112 is a pixel definition layer, 113 is an OLED light-emitting device layer, 114 is an encapsulation layer, 115 is an OC flat layer, 116 is a BM barrier layer, 117 is a heat dissipation ring, and 118 is a color filter layer. Figures 1-2 The silicon-based OLED structure of the present invention is described.

[0037] The silicon-based OLED structure of the present invention includes a silicon-based substrate 110, and the silicon-based substrate 110 preferably includes a base plate and a complementary metal oxide semiconductor (CMOS) circuit. The thickness of the silicon-based substrate 110 is preferably 0.4 to 1 mm, and specifically can be 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1 mm.

[0038] The silicon-based OLED structure of the present invention comprises an anode layer 111 , and the thickness of the anode layer 111 is preferably 50-200 nm, and specifically can be 50, 100, 150 or 200 nm.

[0039] The silicon-based OLED structure of the present invention includes a pixel definition layer 112 , and the thickness of the pixel definition layer 112 is preferably 100-400 nm, and specifically can be 100, 200, 300 or 400 nm.

[0040] In the present invention, the pixel definition layer 112 is arranged at intervals on the surface of the anode layer 111, and the intervals between the pixel definition layers 112 are filled with an OLED light-emitting device layer 113, and the thickness of the OLED light-emitting device layer 113 is preferably 100 to 300 nm, specifically 100, 200 or 300 nm.

[0041] In the present invention, the width of the intervals of the pixel definition layer 111 is preferably 2-4 μm, specifically 2, 3 or 4 μm.

[0042] The silicon-based OLED structure of the present invention includes an encapsulation layer 114 , and the thickness of the encapsulation layer 114 is preferably 500-1000 nm, and specifically may be 500, 600, 700, 800, 900 or 1000 nm.

[0043] The silicon-based OLED structure of the present invention includes an OC flat layer 115 , and the thickness of the OC flat layer 115 is preferably 300-1000 nm, and specifically may be 300, 400, 500, 600, 700, 800, 900 or 1000 nm.

[0044] The silicon-based OLED structure of the present invention includes a color filter layer 118, and the thickness of the color filter layer 118 is preferably 500-1500 nm, and specifically can be 500, 600, 700, 800, 900, 1000, 1100, 1200, 1300, 1400 or 1500 nm.

[0045] In the present invention, each color filter (including CF-R, CF-B and CF-G) of the color filter layer 118 is respectively embedded in the BM barrier layer 116, and the material of the BM barrier layer 116 is titanium nitride or tantalum nitride.

[0046] In the present invention, the CF-R, CF-B and CF-G are luminous areas, and the area covered by the non-color filter layer 118 on the surface of the OC flat layer 115 is a non-display (luminous) area, and the area of ​​the luminous area is preferably 60% to 85% of the area of ​​the OC flat layer 115.

[0047] In particular, the BM barrier layer 116 is preferably made of titanium nitride or tantalum nitride, and preferably appears dark grey or black.

[0048] In the present invention, the thickness of the BM barrier layer 116 is preferably 300-1000 nm, and specifically may be 300, 400, 500, 600, 700, 800, 900 or 1000 nm.

[0049] The silicon-based OLED structure of the present invention further includes a heat dissipation ring 117 , and the material of the heat dissipation ring 117 is preferably titanium nitride or tantalum nitride.

[0050] In the present invention, the thickness of the heat dissipation ring 117 is preferably 300-1000 nm, and specifically may be 300, 400, 500, 600, 700, 800, 900 or 1000 nm.

[0051] In the present invention, the heat dissipation ring 117 is in contact with the BM barrier layer 116 .

[0052] In the present invention, the distance between the heat dissipation ring 117 and the edge of the light emitting area is preferably 200-1000 μm.

[0053] In the present invention, the heat dissipation ring 117 and the BM barrier layer 116 preferably have the same thickness.

[0054] In the present invention, the present invention further provides a method for preparing the silicon-based OLED structure described in the above technical solution, comprising the following steps:

[0055] Deposition is performed on the upper surface of the silicon-based substrate 110 to obtain an anode layer 111;

[0056] Deposition is performed on the upper surface of the anode layer 111 to obtain a pixel definition layer 112, and then an OLED light emitting device layer 113 is formed;

[0057] Deposition is performed on the upper surfaces of the pixel definition layer 112 and the OLED light emitting device layer 113 to obtain an encapsulation layer 114;

[0058] Deposition is performed on the upper surface of the encapsulation layer 114 to obtain an OC flat layer 115;

[0059] The upper surface of the OC flat layer 115 is deposited and then etched to obtain a BM barrier layer 116, and then the non-display area of ​​the upper surface of the OC flat layer 115 is deposited and then etched to obtain a heat dissipation ring 117, and then a color filter layer 118 is prepared to obtain the silicon-based OLED structure.

[0060] Figures 3 to 11 The flowchart of the present invention for preparing the silicon-based OLED structure is as follows: Figure 3To prepare a process for forming a silicon-based substrate 110, Figure 4 The process of depositing on the upper surface of the silicon-based substrate 110 to obtain the anode layer 111 is as follows: Figure 5 The process of depositing on the upper surface of the anode layer 111 to obtain the pixel definition layer 112 is as follows: Figure 6 The process of forming the OLED light emitting device layer 113, Figure 7 In the process of depositing the encapsulation layer 114, Figure 8 The process of depositing the OC flat layer 115 on the upper surface of the encapsulation layer 114 is as follows: Fig. 9 The process of depositing and etching the upper surface of the OC flat layer 115 to obtain the BM barrier layer 116 is as follows: Fig.10 The process of depositing and then etching the non-display area on the upper surface of the OC flat layer 115 to obtain the heat dissipation ring 117 is as follows: Fig.11 This is a process of forming the color filter layer 118 .

[0061] In the present invention, the preparation process of the barrier layer 116 preferably includes the following steps: 1. Using PVD equipment to coat materials with high reflectivity and high thermal conductivity (including titanium nitride or tantalum nitride); 2. Using a coating device to coat the entire surface of PR glue, and then performing photolithography and development to expose the corresponding pattern; 3. Using a dry etching device to etch away excess titanium nitride or tantalum nitride film layer; 4. Using a degumming device to remove the remaining PR glue to obtain the barrier layer 116.

[0062] In the present invention, the preparation process of the heat dissipation ring 117 preferably includes the following steps: 1. using PVD equipment to coat titanium nitride or tantalum nitride; 2. using glue coating equipment to coat the entire surface of PR glue, and then performing photolithography and development to expose the corresponding pattern; 3. using dry etching equipment to etch away excess titanium nitride or tantalum nitride film layer; 4. removing the remaining PR glue through glue removal equipment to obtain the heat dissipation ring 117.

[0063] The present invention has no particular limitation on the specific methods of deposition and etching, and methods well known to those skilled in the art may be used, such as physical vapor deposition (PVD) and dry etching (Dry Etch).

[0064] The technical solutions in the present invention will be described clearly and completely below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0065] Example 1

[0066] Preparation with Figures 1-2 The silicon-based OLED structure shown in the figure is as follows: Figures 3 to 11 As shown:

[0067] A silicon-based substrate 110 (thickness 0.4 mm) is provided, and a deposition is performed on the upper surface of the silicon-based substrate 110 to obtain an anode layer 111 (Ti, thickness 50 nm), and then a deposition is performed on the upper surface of the anode layer 111 to obtain a pixel definition layer 112 (SiNx, thickness 100 nm), and then an OLED light-emitting device layer 113 (thickness 100 nm) is formed by evaporation, and then a deposition is performed to obtain an encapsulation layer 114 (Al 2 O 3 , with a thickness of 500nm), depositing on the upper surface of the encapsulation layer 114 to obtain an OC flat layer 115 (PR glue, with a thickness of 300nm), then using PVD equipment to coat titanium nitride on the upper surface of the OC flat layer 115, and then using a coating device to coat the entire surface of the PR glue, and then performing photolithography and development to expose the corresponding pattern, and then using a dry etching device to etch away excess titanium nitride, and then using a degumming device to remove the remaining PR glue to obtain the barrier layer 116 (titanium nitride, with a thickness of 300nm), and then using PVD equipment to coat titanium nitride on the non-display area on the upper surface of the OC flat layer 115, Use a coating device to coat the entire surface of the PR glue, then perform photolithography and development to expose the corresponding pattern, then use a dry etching device to etch away excess titanium nitride, and then use a degumming device to remove the remaining PR glue to obtain a heat dissipation ring 117 (titanium nitride, 300nm thick), and then prepare a color filter layer 118 (500nm thick) to obtain the silicon-based OLED structure, wherein the area of ​​the light-emitting region is 85% of the area of ​​the OC flat layer 115, the width of the interval of the pixel definition layer 111 is 2μm, the heat dissipation ring 117 is in contact with the BM barrier layer 116, and the distance between the heat dissipation ring 117 and the edge of the light-emitting region is 200μm.

[0068] The present invention adds a BM barrier layer 116 and a heat dissipation ring 117 in the non-AA area. The BM barrier layer used in the related art is made of PR glue and only has a light-blocking effect. The present invention replaces the BM material with a material with high reflectivity and high thermal conductivity such as titanium nitride or tantalum nitride. The overall thickness is thick and it is dark gray or black. It can not only block light, but also reflect the light of the device back. The reflectivity is basically greater than 60%. The high reflectivity of the BM barrier layer 116 structure blocks the light emitted by the silicon-based OLED device within the respective R, G, and B regions, preventing light crosstalk and improving the color deviation of the device. At the same time, the BM barrier layer 116 and the heat dissipation ring 117 have the characteristics of high thermal conductivity, which can promptly conduct the heat generated by the device during operation and dissipate it to the outside world, preventing heat accumulation in the device and extending the service life of the device.

[0069] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A silicon-based OLED structure, characterized in that: It comprises a silicon-based substrate (110), an anode layer (111), a pixel definition layer (112), a packaging layer (114), an OC flat layer (115) and a color filter layer (118) which are stacked in sequence; The pixel definition layers (112) are arranged at intervals on the surface of the anode layer (111), and the intervals between the pixel definition layers (112) are filled with OLED light-emitting device layers (113); Each color filter of the color filter layer (118) is respectively embedded in the BM barrier layer (116); the material of the BM barrier layer (116) is a material with high reflectivity and high thermal conductivity; the reflectivity of the material is greater than 60% and the thermal conductivity is greater than 9 W / (m·K); It also includes a heat dissipation ring (117), and the heat dissipation ring (117) is located in a non-display area on the upper surface of the OC flat layer (115).

2. The silicon-based OLED structure according to claim 1, characterized in that: The thickness of the BM barrier layer (116) is 300-1000 nm.

3. The silicon-based OLED structure according to claim 1, characterized in that: The heat dissipation ring (117) is made of titanium nitride or tantalum nitride.

4. The silicon-based OLED structure according to claim 1 or 3, characterized in that: The heat dissipation ring (117) has a thickness of 300-1000 nm.

5. The silicon-based OLED structure according to claim 4, characterized in that: The heat dissipation ring (117) has the same thickness as the BM barrier layer (116).

6. The silicon-based OLED structure according to claim 1, characterized in that: The color filter layer (118) has a thickness of 500-1500 nm.

7. The silicon-based OLED structure according to claim 1, characterized in that: The thickness of the OC flat layer (115) is 300-1000 nm.

8. The silicon-based OLED structure according to claim 1, characterized in that: The thickness of the encapsulation layer (114) is 500-1000 nm.

9. The silicon-based OLED structure according to claim 1, characterized in that: The thickness of the pixel definition layer (112) is 100-400 nm.

10. The method for preparing a silicon-based OLED structure according to any one of claims 1 to 9, characterized in that: The following steps are involved: Depositing on the upper surface of a silicon-based substrate (110) to obtain an anode layer (111); Deposition is performed on the upper surface of the anode layer (111) to obtain a pixel definition layer (112), and then an OLED light-emitting device layer (113) is formed; Deposition is performed on the upper surfaces of the pixel definition layer (112) and the OLED light-emitting device layer (113) to obtain an encapsulation layer (114); Deposition is performed on the upper surface of the encapsulation layer (114) to obtain an OC flat layer (115); The upper surface of the OC flat layer (115) is deposited and then etched to obtain a BM barrier layer (116), and then a non-display area of ​​the upper surface of the OC flat layer (115) is deposited and then etched to obtain a heat dissipation ring (117), and then a color filter layer (118) is prepared to obtain the silicon-based OLED structure.

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