Pixel circuit, image sensor, camera module, device and image generation method

Abstract

The application discloses a pixel circuit, an image sensor, a camera module, an equipment and an image generation method, and belongs to the technical field of camera shooting. The pixel circuit comprises pixel units of a Bayer array with multiple rows and multiple columns, multiple high dynamic range readout units and multiple signal readout units; input ends of the multiple signal readout units are electrically connected with the multiple rows of pixel units one by one; output ends of the multiple signal readout units are electrically connected with multiple analog-to-digital converters; a first end of each high dynamic range readout unit in the multiple high dynamic range readout units is electrically connected with an anode of multiple light sensing elements comprised by one n-row-n-column pixel unit; a second end of the multiple high dynamic range readout units is electrically connected with multiple first analog-to-digital converters one by one, the high dynamic range readout unit is used for outputting a high dynamic range image, and the first analog-to-digital converter is an analog-to-digital converter in the multiple analog-to-digital converters and is electrically connected with a first row of pixel units of the n-row-n-column pixel unit.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of camera technology, and particularly relates to a pixel circuit, an image sensor, a camera module, a device and an image generation method. BACKGROUND

[0002] At present, the market competition of mobile terminal products is increasingly fierce, especially in the aspect of photographing of smart phones, the mobile terminals of various brands are extremely fierce, mainly in the aspect of dynamic range improvement of images.

[0003] In the related art, a multi-exposure multi-frame fusion manner is mainly used to improve the dynamic range of an image to obtain a high dynamic range (HDR) image. However, the multi-exposure multi-frame fusion manner will cause motion blur of a moving object in photographing. SUMMARY

[0004] Embodiments of the application aim to provide a pixel circuit, an image sensor, a camera module, a device and an image generation method, which can improve the dynamic range of an image and do not cause motion blur.

[0005] In a first aspect, the embodiments of the application provide a pixel circuit, comprising: a plurality of rows and columns of pixel units of a Bayer array, a plurality of high dynamic range readout units and a plurality of signal readout units;

[0006] The input ends of the plurality of signal readout units are electrically connected one by one with the plurality of rows of pixel units;

[0007] The output ends of the plurality of signal readout units are electrically connected one by one with a plurality of analog-to-digital converters; and the signal readout units are configured to read out voltage signals corresponding to each row of pixel units to the analog-to-digital converters;

[0008] A first end of each high dynamic range readout unit of the plurality of high dynamic range readout units is electrically connected with a plurality of light sensing elements included in an n rows and n columns of pixel units, wherein the n rows and n columns of pixel units correspond to the same color, and n is a positive integer greater than or equal to 2;

[0009] A second end of the plurality of high dynamic range readout units is electrically connected one by one with a plurality of first analog-to-digital converters, and the first analog-to-digital converters are analog-to-digital converters electrically connected with the first row of pixel units of the n rows and n columns of pixel units in the plurality of analog-to-digital converters; and the high dynamic range readout units are configured to output a high dynamic range image.

[0010] In a second aspect, the embodiments of the application provide an image sensor, comprising:

[0011] The pixel circuit provided by the embodiments of the application.

[0012] In a third aspect, an embodiment of the present application provides a camera module, comprising:

[0013] The image sensor provided by the embodiment of the present application.

[0014] In a fourth aspect, an embodiment of the present application provides an electronic device, comprising:

[0015] The camera module provided by the embodiment of the present application.

[0016] In a fifth aspect, an embodiment of the present application provides an image generation method, applied to the electronic device provided by the embodiment of the present application, and the method comprises:

[0017] When it is necessary to enhance the high dynamic range of the image, the voltage signals of the anodes of the plurality of photosensitive elements included in the n-row n-column pixel unit are acquired;

[0018] According to the voltage signals, a first image is generated.

[0019] In the embodiment of the present application, the pixel circuit comprises a plurality of pixel units in the form of a Bayer array, a plurality of high dynamic range readout units and a plurality of signal readout units; the input ends of the plurality of signal readout units are electrically connected to the plurality of pixel units in one-to-one correspondence; the plurality of signal readout units are electrically connected to the plurality of analog-to-digital converters in one-to-one correspondence; the signal readout units are configured to read out the voltage signals corresponding to each row of pixel units to the analog-to-digital converters; the first end of each high dynamic range readout unit of the plurality of high dynamic range readout units is electrically connected to the anodes of the plurality of photosensitive elements included in an n-row n-column pixel unit, wherein the n-row n-column pixel unit corresponds to the same color, and n is a positive integer greater than or equal to 2; the second end of the plurality of high dynamic range readout units is electrically connected to the plurality of first analog-to-digital converters in one-to-one correspondence, and the first analog-to-digital converter is an analog-to-digital converter electrically connected to the first row of pixel units of the n-row n-column pixel unit in the plurality of analog-to-digital converters; the high dynamic range readout unit is configured to output a high dynamic range image. By reading the voltage signals of the anodes of the photosensitive elements in the n-row n-column pixel unit, an image is generated according to the voltage signals of the anodes of the photosensitive elements in the n-row n-column pixel unit, which can improve the high dynamic range of the image and does not produce motion blur, effectively improving the image quality. BRIEF DESCRIPTION OF DRAWINGS

[0020] Figure 1 is a schematic diagram of the arrangement of the pixel unit of the Bayer array provided by the embodiment of the present application;

[0021] Figure 2 is a first structure schematic diagram of the pixel circuit provided by the embodiment of the present application;

[0022] Figure 3 is a second structure schematic diagram of the pixel circuit provided by the embodiment of the present application;

[0023] Figure 4 This is a third structural diagram of a pixel circuit provided in an embodiment of the present application;

[0024] Figure 5 This is a fourth structural diagram of a pixel circuit provided in an embodiment of the present application;

[0025] Figure 6 This is a fifth structural diagram of the pixel circuit provided in an embodiment of the present application;

[0026] Figure 7 This is a sixth structural diagram of a pixel circuit provided in an embodiment of the present application;

[0027] Figure 8 is a schematic diagram of the specific structure of the pixel circuit provided in an embodiment of the present application;

[0028] Figure 9 is a flowchart of an image generation method according to an embodiment of the present application;

[0029] Figure 10 It is a schematic diagram of the hardware structure of the electronic device implementing the embodiment of the present application. DETAILED DESCRIPTION

[0030] The following will be combined with the accompanying drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of this application.

[0031] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0032] Below, in conjunction with the accompanying drawings, the pixel circuit, image sensor, camera module, device and image generation method provided in the embodiments of the present application are described in detail through specific embodiments and their application scenarios.

[0033] The pixel circuit provided by the embodiment of the present application includes pixel units of a Bayer array with multiple rows and columns, multiple high dynamic range readout units and multiple signal readout units; the input ends of the multiple signal readout units are electrically connected one-to-one to the multiple rows of pixel units; the multiple signal readout units are electrically connected one-to-one to the multiple analog-to-digital converters; the signal readout unit is used to read the voltage signal corresponding to each row of pixel units to the analog-to-digital converter; the first end of each high dynamic range readout unit in the multiple high dynamic range readout units is electrically connected to the positive electrodes of multiple photosensitive elements included in an n-row and n-column pixel unit, wherein the n-row and n-column pixel units correspond to the same color, and n is a positive integer greater than or equal to 2; the second ends of the multiple high dynamic range readout units are electrically connected one-to-one to multiple first analog-to-digital converters, the first analog-to-digital converter is an analog-to-digital converter electrically connected to the first row of pixel units in the n-row and n-column pixel units among the multiple analog-to-digital converters, and the high dynamic range readout unit is used to output a high dynamic range image.

[0034] In some possible implementations of the embodiments of the present application, the multiple rows and columns of pixel units in the embodiments of the present application are pixel units in at least two rows and at least two columns.

[0035] It is understandable that each pixel unit includes a photosensitive element, and the pixel units of n rows and n columns include n 2 A photosensitive element.

[0036] In some possible implementations of the present application, the pixel units of the Bayer array are arranged as follows: Figure 1 shown. Figure 1 Schematic diagram of the arrangement of pixel units of the Bayer array provided in an embodiment of the present application.

[0037] The pixel circuit provided in the embodiment of the present application is described below with n being 2.

[0038] like Figure 2 As shown, Figure 2 This is a schematic diagram of the first structure of the pixel circuit provided in the embodiment of the present application. Figure 2 In the figure, the pixel circuit 100 includes pixel units 11 of a Bayer array with multiple rows and columns, multiple high dynamic range readout units 12 and multiple signal readout units 13; the input ends of the multiple signal readout units 13 are electrically connected one by one to the multiple rows of pixel units 11; the output ends of the multiple signal readout units 13 are electrically connected one by one to multiple analog-to-digital converters 200; the analog-to-digital converter 200 converts the sampled voltage signal of each row of pixel units into a digital signal, and the image processor generates an image based on the digital signal generated by the analog-to-digital converter 200.

[0039] Figure 2The high dynamic range readout unit 12 shown in the middle is electrically connected to the anodes of the light-receiving elements PD included in the pixel units 11 of the first row and the first column, the anodes of the light-receiving elements PD included in the pixel units 11 of the first row and the third column, the anodes of the light-receiving elements PD included in the pixel units 11 of the third row and the first column, and the anodes of the light-receiving elements PD included in the pixel units 11 of the third row and the third column.

[0040] Another high dynamic range readout unit 12 is electrically connected to the anodes of the light-receiving elements PD included in the pixel units 11 of the first row and the second column, the anodes of the light-receiving elements PD included in the pixel units 11 of the first row and the fourth column, the anodes of the light-receiving elements PD included in the pixel units 11 of the third row and the second column, and the anodes of the light-receiving elements PD included in the pixel units 11 of the third row and the fourth column.

[0041] Still another high dynamic range readout unit 12 is electrically connected to the anodes of the light-receiving elements PD included in the pixel units 11 of the second row and the first column, the anodes of the light-receiving elements PD included in the pixel units 11 of the second row and the third column, the anodes of the light-receiving elements PD included in the pixel units 11 of the fourth row and the first column, and the anodes of the light-receiving elements PD included in the pixel units 11 of the fourth row and the third column.

[0042] Still another high dynamic range readout unit 12 is electrically connected to the anodes of the light-receiving elements PD included in the pixel units 11 of the second row and the second column, the anodes of the light-receiving elements PD included in the pixel units 11 of the second row and the fourth column, the anodes of the light-receiving elements PD included in the pixel units 11 of the fourth row and the second column, and the anodes of the light-receiving elements PD included in the pixel units 11 of the fourth row and the fourth column.

[0043] That is, when n is 2, the high dynamic range readout unit 12 is electrically connected to the anodes of the light-receiving elements PD included in the pixel units 11 of the ith row and the jth column, the anodes of the light-receiving elements PD included in the pixel units 11 of the ith row and the j+2th column, the anodes of the light-receiving elements PD included in the pixel units 11 of the i+2th row and the jth column, and the anodes of the light-receiving elements PD included in the pixel units 11 of the i+2th row and the j+2th column.

[0044] When n is 3, the anode of the photosensitive element PD included in the pixel unit 11 of the i-th row and the j-th column, the anode of the photosensitive element PD included in the pixel unit 11 of the i-th row and the j+2-th column, the anode of the photosensitive element PD included in the pixel unit 11 of the i-th row and the j+4-th column, the anode of the photosensitive element PD included in the pixel unit 11 of the i+2-th row and the j-th column, the anode of the photosensitive element PD included in the pixel unit 11 of the i+2-th row and the j+2-th column, the anode of the photosensitive element PD included in the pixel unit 11 of the i+2-th row and the j+4-th column, the anode of the photosensitive element PD included in the pixel unit 11 of the i+4-th row and the j-th column, the anode of the photosensitive element PD included in the pixel unit 11 of the i+4-th row and the j+2-th column, and the anode of the photosensitive element PD included in the pixel unit 11 of the i+4-th row and the j+4-th column are electrically connected.

[0045] In some possible implementations of the embodiments of the present application, the pixel unit includes a first switch tube, a photosensitive element, and a second switch tube; the cathode of the photosensitive element is electrically connected to the source of the first switch tube; the drain of the first switch tube is electrically connected to a signal readout unit corresponding to the pixel unit including the photosensitive element; and the anode of the photosensitive element is electrically connected to the drain of the second switch tube.

[0046] As shown in Figure 3 , Figure 3 is a second structure diagram of a pixel circuit provided by the embodiments of the present application. In Figure 3 , the pixel unit 11 includes a first switch tube TG1, a photosensitive element PD, and a second switch tube TG2; the cathode of the photosensitive element PD is electrically connected to the source of the first switch tube TG1; the drain of the first switch tube TG1 is electrically connected to a signal readout unit 13 corresponding to the pixel unit 11 including the photosensitive element PD; the anode of the photosensitive element PD is electrically connected to the drain of the second switch tube TG2; and the source of the second switch tube TG2 is grounded.

[0047] In some possible implementations of the embodiments of the present application, the high dynamic range readout unit can include a third switch tube and a first capacitor; the drain of the third switch tube is electrically connected to the anodes of the photosensitive elements included in the pixel units of n rows and n columns; the source of the third switch tube is electrically connected to the first plate of the first capacitor; and the second plate of the first capacitor is grounded.

[0048] As shown in Figure 4 , Figure 4 is a third structure diagram of a pixel circuit provided by the embodiments of the present application. In Figure 4In the high dynamic range readout unit 12, the third switching transistor TG3 and the first capacitor C1 are included. The drain of the third switching transistor TG3 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 in the first row and first column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the first row and third column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the third row and first column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 in the third row and first column; the source of the third switching transistor TG3 is electrically connected to the first plate of the first capacitor C1 and the analog-to-digital converter 200; the second plate of the first capacitor C1 is grounded.

[0049] In some possible implementations of the embodiments of the present application, the high dynamic range readout unit may further include: a fourth switch tube; the drain of the fourth switch tube is connected to the power supply; and the source of the fourth switch tube is electrically connected to the first plate of the first capacitor.

[0050] like Figure 5 As shown, Figure 5 This is a fourth structural diagram of a pixel circuit provided in an embodiment of the present application. Figure 5 In the high dynamic range readout unit 12, a third switching transistor TG3, a first capacitor C1, and a fourth switching transistor TG4. The drain of the third switching transistor TG3 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 in the first row and first column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the first row and third column, the positive electrode of the photosensitive element PD included in the pixel unit 11 in the third row and first column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 in the third row and first column; the source of the third switching transistor TG3 is electrically connected to the first plate of the first capacitor C1, the source of the fourth switching transistor TG4, and the analog-to-digital converter 200; the drain of the fourth switching transistor is connected to the power supply VDD; and the second plate of the first capacitor C1 is grounded.

[0051] When the fourth switch tube TG4 is turned on, the first capacitor C1 is cleared.

[0052] In some possible implementations of the embodiments of the present application, the high dynamic range readout unit may further include: a first signal amplifier and a first row selector; the drain of the first signal amplifier is connected to the power supply; the source of the first signal amplifier is electrically connected to the drain of the first row selector; the gate of the first signal amplifier is electrically connected to the first plate of the first capacitor; and the source of the first row selector is electrically connected to the analog-to-digital converter.

[0053] like Figure 6 As shown, Figure 6 This is a fifth structural diagram of the pixel circuit provided in the embodiment of the present application. Figure 6In the figure, the high dynamic range readout unit 12 includes a third switching tube TG3, a first capacitor C1, a first signal amplifier TG5 and a first row selector TG6. The drain of the third switching tube TG3 is electrically connected to the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and first column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the first row and third column, the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and first column, and the positive electrode of the photosensitive element PD included in the pixel unit 11 of the third row and third column; the source of the third switching tube TG3 is electrically connected to the first plate of the first capacitor C1 and the gate of the first signal amplifier TG5 respectively; the second plate of the first capacitor C1 is grounded; the drain of the first signal amplifier TG5 is connected to the power supply VDD; the source of the first signal amplifier TG5 is electrically connected to the drain of the first row selector TG6; and the source of the first row selector TG6 is electrically connected to the analog-to-digital converter 200.

[0054] The voltage signal of the first capacitor C1 is amplified by the first signal amplifier TG5 and the first row selector TG6 and then transmitted to the analog-to-digital converter for reading.

[0055] In some possible implementations of the embodiments of the present application, the signal readout unit may include: a reset transistor, a parasitic capacitor, a second signal amplifier and a second row selector; the gate of the second signal amplifier is electrically connected to the negative electrode of the photosensitive element included in the pixel sub-unit, the first plate of the parasitic capacitor, and the source of the reset transistor, respectively; the drain of the second signal amplifier and the drain of the reset transistor are both connected to the power supply; the source of the second signal amplifier is electrically connected to the drain of the second row selector; and the source of the second row selector is electrically connected to the analog-to-digital converter.

[0056] like Figure 7 As shown, Figure 7 This is a sixth structural diagram of the pixel circuit provided in the embodiment of the present application. Figure 7 In the embodiment, the signal readout unit 13 includes a reset transistor RST, a parasitic capacitor FD, a second signal amplifier SF, and a second row selector SET. The gate of the second signal amplifier SF is electrically connected to the cathode of the photosensitive element PD included in the pixel unit 11, the first plate of the parasitic capacitor FD, and the source of the reset transistor RST. The drain of the second signal amplifier SF and the drain of the reset transistor RST are both connected to the power supply VDD. The source of the second signal amplifier SF is electrically connected to the drain of the second row selector SET. The source of the second row selector SET is electrically connected to the analog-to-digital converter 200.

[0057] Figure 8 This is a schematic diagram of a specific structure of a pixel unit provided in an embodiment of the present application.

[0058] exist Figure 8In the pixel circuit 100, a plurality of pixel units 11 of a Bayer array, a plurality of high dynamic range readout units 12, and a plurality of signal readout units 13 are included. The pixel unit 11 includes a first switch tube TG1, a second switch tube TG2, and a light sensing element PD; the high dynamic range readout unit 12 includes a third switch tube TG3, a first capacitor C1, a fourth switch tube TG4, a first signal amplifier TG5, and a first row selector TG6; and the signal readout unit 13 includes a reset triode RST, a parasitic capacitor FD, a second signal amplifier SF, and a second row selector SET.

[0059] In some possible implementations in the embodiments of the present application, the switch tube, the signal amplifier, the row selector, and the reset triode in the embodiments of the present application can be a metal-oxide semiconductor field-effect transistor (MOSFET).

[0060] The negative electrode of the light sensing element PD is electrically connected to the source electrode of the first switch tube TG1; the drain electrode of the first switch tube TG1 is electrically connected to the drain electrode of the reset triode RST, the first plate of the parasitic capacitor FD, and the gate electrode of the second signal amplifier SF, respectively; the second plate of the parasitic capacitor FD is grounded; the source electrode of the reset triode RST and the source electrode of the second signal amplifier SF are connected to a power supply VDD; the drain electrode of the second signal amplifier SF is electrically connected to the source electrode of the second row selector SET; the drain electrode of the second row selector SET is electrically connected to the positive electrode of a direct current power supply DC and an analog-to-digital converter 200, respectively; the positive electrode of the light sensing element PD is electrically connected to the drain electrode of the second switch tube TG2; and the source electrode of the second switch tube TG2 is grounded.

[0061] The drain electrode of the third switch tube TG3 is electrically connected to the positive electrode of the light sensing element PD included in the pixel unit 11 in the first row and the first column, the positive electrode of the light sensing element PD included in the pixel unit 11 in the first row and the third column, the positive electrode of the light sensing element PD included in the pixel unit 11 in the third row and the first column, and the positive electrode of the light sensing element PD included in the pixel unit 11 in the third row and the third column, respectively; the source electrode of the third switch tube TG3 is electrically connected to the first plate of the first capacitor C1, the source electrode of the fourth switch tube TG4, and the gate electrode of the first signal amplifier TG5, respectively; the drain electrode of the fourth switch tube TG4 and the drain electrode of the first signal amplifier TG5 are both electrically connected to the power supply VDD; the source electrode of the first signal amplifier TG5 is electrically connected to the drain electrode of the first row selector TG6; and the source electrode of the first row selector TG6 is electrically connected to the analog-to-digital converter 200.

[0062] When the pixel is exposed, the reset transistor RST, the fourth switch tube TG4 and each pixel subunit including the first switch tube TG1 are opened, and the first capacitor C1 and the parasitic capacitor FD are emptied. The electron-hole pairs generated by the light irradiation will be separated due to the existence of the electric field of the photosensitive element PD, and the electrons move to the N region and the holes move to the P region. After the exposure is completed, the reset transistor RST is closed to reset the parasitic capacitor FD to a high level. After the reset is completed, the parasitic capacitor FD reset level is read out through the second signal amplifier SF and the second row selector SET.

[0063] When a high-definition image needs to be generated, the first switch tube TG1 at the negative electrode of the photosensitive element PD included in the pixel unit 11 in the first row and the first column is closed, and the charge of the photosensitive element included in the pixel unit 11 in the first row and the first column is transferred from the photosensitive area to the parasitic capacitor FD for a second readout. At this time, the voltage of the parasitic capacitor FD decreases due to the charge injection of the photosensitive element PD included in the pixel unit 11 in the first row and the first column. The voltage signal of the parasitic capacitor FD is output to the analog-to-digital converter 200 through the second signal amplifier SF and the second row selector SET. The processing process of the photosensitive element PD included in the pixel unit 11 in the first row and the second column to the photosensitive element PD included in the pixel unit 11 in the last column of the first row is similar to that of the photosensitive element PD included in the pixel unit 11 in the first row and the first column. The embodiments of the present application will not be described here. In this way, the photoelectric signal of a row of pixels can be obtained. The processing process of the second row to the last row is similar to that of the first row. The embodiments of the present application will not be described here. In this way, a high-definition raw image can be obtained.

[0064] When it is necessary to generate an image with a higher dynamic range, the second switch tube TG2 of the positive end of the photosensitive element PD included in the pixel unit 11 of the first row and first column, the second switch tube TG2 of the positive end of the photosensitive element PD included in the pixel unit 11 of the first row and third column, the second switch tube TG2 of the positive end of the photosensitive element PD included in the pixel unit 11 of the third row and first column, and the second switch tube TG2 of the positive end of the photosensitive element PD included in the pixel unit 11 of the third row and third column are disconnected, and the third switch tube TG3 and the fourth switch tube TG4 are closed. All the positively charged holes in the four photosensitive elements are transferred to the first capacitor C1, wherein the four photosensitive elements include the photosensitive element PD included in the pixel unit 11 in the first row and first column, the photosensitive element PD included in the pixel unit 11 in the first row and third column, the photosensitive element PD included in the pixel unit 11 in the third row and first column, and the photosensitive element PD included in the pixel unit 11 in the third row and third column. At this time, the voltage of the first capacitor C1 rises, and the voltage signal of the first capacitor C1 is transmitted to the analog-to-digital converter 200 for reading through the first signal amplifier TG5 and the first row selector TG6. The obtained voltage signal is the sum of the voltage signals of the four photosensitive elements, that is, the total signal of the four pixels of the same color combined together. Since the voltage of the first capacitor C1 is much larger than the voltage of the parasitic capacitor FD, the dynamic range of the image generated by the image processor will be very large.

[0065] In the embodiment of the present application, an image is generated by the electrical signal of the positive electrode of the photosensitive element, which can generate an image with a larger dynamic range, improve the high dynamic range of the image, and does not produce motion blur, thereby effectively improving the image quality.

[0066] The positive and negative electrodes of the pixel unit in the embodiment of the present application can output two voltage signals. These two voltage signals are output in different ways, allowing the sensor to obtain images with high dynamic range or high definition. In high dynamic range scenarios, it can effectively improve the photo-taking effect and user experience.

[0067] An embodiment of the present application further provides an image sensor, comprising the pixel circuit provided in an embodiment of the present application.

[0068] An embodiment of the present application also provides a camera module, including the image sensor provided in an embodiment of the present application.

[0069] An embodiment of the present application also provides an electronic device, including the camera module provided by the embodiment of the present application.

[0070] The electronic device in the embodiments of the present application can be a terminal, or other devices other than the terminal. For example, the electronic device can be a mobile phone, a tablet computer, a notebook computer, a palm computer, a vehicle-mounted electronic device, a mobile Internet device (MID), an augmented reality (AR) / virtual reality (VR) device, a robot, a wearable device, an ultra-mobile personal computer (UMPC), a netbook, or a personal digital assistant (PDA), etc., and can also be a server, a network attached storage (NAS), a personal computer (PC), a television (TV), a teller machine, or a self-service machine, etc., and the embodiments of the present application are not limited in this regard.

[0071] The electronic device in the embodiments of the present application can be an electronic device with an operating system. The operating system can be an Android operating system, an iOS operating system, or other possible operating systems, and the embodiments of the present application are not limited in this regard.

[0072] The embodiments of the present application further provide an image generation method, applied to the electronic device provided in the embodiments of the present application.

[0073] Figure 9 FIG. 1 is a flowchart of the image generation method provided in the embodiments of the present application. The image generation method can include the following steps:

[0074] Step 901: When it is needed to enhance the high dynamic range of an image, acquire a voltage signal of a positive electrode of a plurality of photosensitive elements included in n rows and n columns of pixel units;

[0075] In some possible implementations of the embodiments of the present application, step 901 can include: disconnecting a plurality of switch tubes respectively electrically connected to the positive electrodes of the plurality of photosensitive elements in the n rows and n columns of pixel units; and transmitting, by a high dynamic range readout unit, the voltage signals of the positive electrodes of the plurality of photosensitive elements included in the n rows and n columns of pixel units to a first analog-to-digital converter for reading, to obtain a voltage signal in which the voltage signals of the positive electrodes of the plurality of photosensitive elements included in the n rows and n columns of pixel units are combined together.

[0076] Exemplarily, the positive poles of the four light sensing elements included in the 2-row 2-column pixel unit are connected to the high dynamic range readout unit described above. The 2-row 2-column pixel unit includes a first-row first-column pixel unit, a first-row third-column pixel unit, a third-row first-column pixel unit, and a third-row third-column pixel unit.

[0077] The second switch tubes of the positive poles of the light sensing elements included in the first-row first-column pixel unit, the second switch tubes of the positive poles of the light sensing elements included in the first-row third-column pixel unit, the second switch tubes of the positive poles of the light sensing elements included in the third-row first-column pixel unit, and the second switch tubes of the positive poles of the light sensing elements included in the third-row third-column pixel unit are turned off, and the third switch tube and the fourth switch tube included in the high dynamic range readout unit are turned on. All the positive holes of the four light sensing elements, including the light sensing elements included in the first-row first-column pixel unit, the light sensing elements included in the first-row third-column pixel unit, the light sensing elements included in the third-row first-column pixel unit, and the light sensing elements included in the third-row third-column pixel unit, are transmitted to the first capacitor included in the high dynamic range readout unit. At this time, the voltage of the first capacitor rises, and the voltage signal of the first capacitor is transmitted to the analog-to-digital converter for reading by the first signal amplifier and the first row selector included in the high dynamic range readout unit, and the obtained voltage signal is the sum of the voltage signals of the four light sensing elements, that is, the total signal of the four same-color pixels combined together. Since the voltage of the first capacitor is much greater than the voltage of the parasitic capacitor, the dynamic range of the image generated by the image processor will be very large.

[0078] In step 902, a first image is generated according to the voltage signal.

[0079] In the embodiments of the present application, the image is generated by the electrical signal of the positive pole of the light sensing element, a large dynamic range image can be generated, the high dynamic range of the image can be improved, and motion blur does not occur, effectively improving the image quality.

[0080] In some possible implementations of the embodiments of the present application, the image generation method provided by the embodiments of the present application can further include: when it is necessary to enhance the clarity of the image, closing a plurality of switch tubes respectively electrically connected to the negative poles of a plurality of light sensing elements in the n-row n-column pixel unit; transmitting, by the signal readout unit, the voltage signals of the negative poles of the light sensing elements in each row of pixel units to the analog-to-digital converter for reading to obtain the voltage signals corresponding to each row of pixel units; and generating a second image according to the voltage signals corresponding to each row of pixel units.

[0081] When a high-definition image needs to be generated, a first switch tube at the negative end of the photosensitive element of the pixel unit in the first row and the first column is closed, and the charge of the photosensitive element of the pixel unit in the first row and the first column is transferred from the photosensitive region to the parasitic capacitor for a second readout. At this time, the voltage of the parasitic capacitor decreases due to the charge injection of the photosensitive element of the pixel unit in the first row and the first column. The voltage signal of the parasitic capacitor is output to the analog-to-digital converter through the second signal amplifier and the second row selector. The processing process of the photosensitive element of the pixel unit in the first row and the second column to the photosensitive element of the pixel unit in the last column in the first row is similar to that of the photosensitive element of the pixel unit in the first row and the first column. Details are not described herein. In this way, the photoelectric signal of a row of pixels can be obtained. The processing process of the second row to the last row is similar to that of the first row. Details are not described herein.

[0082] In the embodiment of the present application, a high-definition image can be obtained.

[0083] The positive and negative electrodes of the pixel unit in the embodiment of the present application can output two voltage signals. The two voltage signals are output in different ways, so that the sensor can obtain an image with high dynamic range or high definition. In a high dynamic range scene, the photographing effect and user experience can be effectively improved.

[0084] Figure 10 FIG. 1 is a schematic diagram of the hardware structure of an electronic device for implementing the embodiment of the present application.

[0085] The electronic device 1000 includes, but is not limited to, a radio frequency unit 1001, a network module 1002, an audio output unit 1003, an input unit 1004, a sensor 1005, a display unit 1006, a user input unit 1007, an interface unit 1008, a memory 1009, and a processor 1010.

[0086] Those skilled in the art can understand that the electronic device 1000 can also include a power supply (such as a battery) for powering each component. The power supply can be logically connected to the processor 1010 through a power management system, so as to realize functions such as management of charging, discharging, and power consumption management through the power management system. Figure 10 The electronic device structure shown in FIG. 1 does not constitute a limitation on the electronic device. The electronic device can include more or fewer components than shown, or combine certain components, or have a different arrangement of components, which will not be described herein.

[0087] In the embodiment of the present application, the electronic device 1000 includes the camera module provided by the embodiment of the present application, the camera module provided by the embodiment of the present application includes the image sensor provided by the embodiment of the present application, and the image sensor provided by the embodiment of the present application includes the pixel circuit provided by the embodiment of the present application.

[0088] The processor 1010 is configured to: when it is required to enhance a high dynamic range of an image, acquire a voltage signal of a positive electrode of a plurality of photosensitive elements included in n rows and n columns of pixel units; and generate a first image according to the voltage signal.

[0089] In the embodiments of the present application, the image is generated by the electrical signal of the positive electrode of the photosensitive element, a large dynamic range image can be generated, the high dynamic range of the image can be improved, and motion blur is not generated, effectively improving the image quality.

[0090] It should be understood that, in the embodiments of the present application, the input unit 1004 can include a graphics processing unit (GPU) 10041 and a microphone 10042. The graphics processing unit 10041 processes image data of a still picture or a video obtained by an image capturing device (such as a camera) in a video capture mode or an image capture mode. The display unit 1006 can include a display panel 10061, which can be configured in the form of a liquid crystal display, an organic light-emitting diode, etc. The user input unit 1007 includes at least one of a touch panel 10071 and other input devices 10072. The touch panel 10071 is also called a touch screen. The touch panel 10071 can include two parts of a touch detection device and a touch controller. The other input devices 10072 can include, but are not limited to, a physical keyboard, function keys (such as volume control keys, on-off keys, etc.), a trackball, a mouse, an operation lever, and the like, which will not be described here.

[0091] The memory 1009 can be used to store software programs and various data. The memory 1009 can mainly include a first storage area storing programs or instructions and a second storage area storing data, wherein the first storage area can store an operating system, application programs or instructions required by at least one function (such as a sound playing function, an image playing function, etc.), etc. In addition, the memory 1009 can include a volatile memory or a non-volatile memory, or the memory 1009 can include both volatile and non-volatile memories. The non-volatile memory can be a Read-Only Memory (ROM), a Programmable ROM (PROM), an Erasable PROM (EPROM), an Electrically EPROM (EEPROM), or a flash memory. The volatile memory can be a Random Access Memory (RAM), a Static RAM (SRAM), a Dynamic RAM (DRAM), a Synchronous DRAM (SDRAM), a Double Data Rate SDRAM (DDR SDRAM), an Enhanced SDRAM (ESDRAM), a Synch link DRAM (SLDRAM), and a Direct Rambus RAM (DRRAM). The memory 1009 in the embodiments of the present application includes but is not limited to these and any other suitable types of memories.

[0092] The processor 1010 can include one or more processing units; optionally, the processor 1010 integrates an application processor and a modem processor, wherein the application processor mainly processes operations related to an operating system, a user interface, and an application program, and the modem processor mainly processes wireless communication signals, such as a baseband processor. It can be understood that the above-mentioned modem processor can also not be integrated into the processor 1010.

[0093] The embodiments of the present application also provide a readable storage medium, the readable storage medium stores programs or instructions, the programs or instructions are executed by a processor to realize various processes of the above-mentioned image generation method embodiments, and the same technical effects can be achieved. To avoid repetition, details are not described here.

[0094] The processor is the processor in the electronic device described in the above embodiments. The readable storage medium includes a computer readable storage medium, examples of the computer readable storage medium include non-transitory computer readable media, such as computer readable only memory (ROM), random access memory (RAM), magnetic disk or optical disk, etc.

[0095] The embodiment of the present application further provides a chip, which comprises a processor and a communication interface, the communication interface is coupled with the processor, the processor is used for running programs or instructions to realize the processes of the above image generation method embodiment and achieve the same technical effects. To avoid repetition, details are not described here.

[0096] It should be understood that the chip mentioned in the embodiment of the present application can also be referred to as a system-level chip, a system chip, a chip system or a system-on-chip chip, etc.

[0097] The embodiment of the present application further provides a computer program product, which is stored in a storage medium, and is executed by at least one processor to realize the processes of the above image generation method embodiment and achieve the same technical effects. To avoid repetition, details are not described here.

[0098] It should be noted that in this document, the term "comprising" or "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such a process, method, article or device. Without more limitations, the element defined by the statement "comprising a" does not exclude the presence of additional identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the method and device in the present application is not limited to the order of performing the functions as shown or discussed, but can also include performing the functions in a substantially simultaneous manner or in the opposite order, for example, the described method can be performed in an order different from that described, and various steps can also be added, omitted or combined. In addition, the features described with reference to some examples can be combined in other examples.

[0099] Through the above description of the embodiments, those skilled in the art can clearly understand that the above-mentioned example methods can be realized by means of software and a necessary general hardware platform, and of course, can also be realized by hardware, but in many cases, the former is a better embodiment. Based on such understanding, the technical solutions of the present application can be embodied in the form of a computer software product in essence or in the form of a part that contributes to the prior art, which is stored in a storage medium (such as a ROM / RAM, a magnetic disk, or an optical disk) and includes a plurality of instructions for causing a terminal (which can be a mobile phone, a computer, a server, or a network device, etc.) to execute the methods described in the various embodiments of the present application.

[0100] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above-mentioned specific embodiments, and the above-mentioned specific embodiments are only illustrative and not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the scope protected by the claims.

Claims

1. A pixel circuit, characterized in that: The pixel circuit includes: pixel units of a Bayer array with multiple rows and columns, multiple high dynamic range readout units and multiple signal readout units; The input ends of the plurality of signal readout units are electrically connected one by one to the plurality of rows of pixel units; The output ends of the plurality of signal readout units are electrically connected one by one to a plurality of analog-to-digital converters; the signal readout units are used to read out the voltage signals corresponding to each row of pixel units to the analog-to-digital converters; A first end of each of the plurality of high dynamic range readout units is electrically connected to a positive electrode of a plurality of photosensitive elements included in a pixel unit with n rows and n columns, wherein the pixel units with n rows and n columns correspond to the same color, and n is a positive integer greater than or equal to 2; The second ends of the multiple high dynamic range readout units are electrically connected one by one to multiple first analog-to-digital converters, and the high dynamic range readout units are used to output high dynamic range images. The first analog-to-digital converter is an analog-to-digital converter among the multiple analog-to-digital converters that is electrically connected to the first row of pixel units of the n rows and n columns of pixel units.

2. The pixel circuit according to claim 1, wherein: The pixel unit includes a first switch tube, a photosensitive element and a second switch tube; The cathode of the photosensitive element is electrically connected to the source of the first switching tube; The drain of the first switching tube is electrically connected to a signal readout unit corresponding to a pixel unit including the photosensitive element; The positive electrode of the photosensitive element is electrically connected to the drain electrode of the second switching tube; The source of the second switch tube is grounded.

3. The pixel circuit according to claim 1, wherein: The high dynamic range readout unit includes: a third switch tube and a first capacitor; The drain of the third switch tube is electrically connected to the positive electrodes of the plurality of photosensitive elements included in the pixel units of n rows and n columns; The source of the third switch is electrically connected to the first plate of the first capacitor; The second plate of the first capacitor is grounded.

4. The pixel circuit according to claim 3, wherein: The high dynamic range readout unit further includes: a fourth switch tube; The drain of the fourth switch tube is connected to the power supply; The source of the fourth switch tube is electrically connected to the first plate of the first capacitor.

5. The pixel circuit according to claim 3, wherein: The high dynamic range readout unit further includes: a first signal amplifier and a first row selector; The drain of the first signal amplifier is connected to a power supply; The source of the first signal amplifier is electrically connected to the drain of the first row selector; The gate of the first signal amplifier is electrically connected to the first plate of the first capacitor; The source of the first row selector is electrically connected to the analog-to-digital converter.

6. The pixel circuit according to claim 1, wherein: The signal readout unit includes: a reset transistor, a parasitic capacitor, a second signal amplifier and a second row selector; The gate of the second signal amplifier is electrically connected to the negative electrode of the photosensitive element included in the pixel unit, the first plate of the parasitic capacitor, and the source of the reset transistor respectively; The drain of the second signal amplifier and the drain of the reset transistor are both connected to a power supply; A source of the second signal amplifier is electrically connected to a drain of the second row selector; A source of the second row selector is electrically connected to the analog-to-digital converter.

7. An image sensor, characterized in that: The image sensor comprises the pixel circuit according to any one of claims 1 to 6.

8. A camera module, characterized in that: The camera module includes the image sensor according to claim 7.

9. An electronic device, characterized in that: The electronic device includes the camera module according to claim 8.

10. An image generation method, characterized in that: Applicable to the electronic device according to claim 9; the method comprising: When it is necessary to enhance the high dynamic range of the image, obtaining voltage signals of the positive electrodes of the plurality of photosensitive elements included in the n rows and n columns of pixel units; A first image is generated according to the voltage signal.

11. The method according to claim 10, characterized in that The obtaining of voltage signals of positive electrodes of a plurality of photosensitive elements included in the n rows and n columns of pixel units includes: Disconnecting multiple switch tubes electrically connected to the positive electrodes of multiple photosensitive elements in the pixel units of n rows and n columns; The voltage signals of the positive electrodes of the multiple photosensitive elements included in the n rows and n columns of pixel units are transmitted to the first analog-to-digital converter for reading through the high dynamic range readout unit to obtain a voltage signal that combines the voltage signals of the positive electrodes of the multiple photosensitive elements included in the n rows and n columns of pixel units.

12. The method according to claim 11, characterized in that The method further comprises: When the image clarity needs to be enhanced, the plurality of switch tubes electrically connected to the negative electrodes of the plurality of photosensitive elements in the n rows and n columns of pixel units are closed; The signal readout unit transmits the voltage signal of the negative electrode of the photosensitive element in each row of pixel units to the analog-to-digital converter for reading, thereby obtaining the voltage signal corresponding to each row of pixel units; A second image is generated according to the voltage signal corresponding to each row of pixel units.

Images