Display device

Abstract

The application relates to a display device, comprising a substrate, a quantum dot layer, a laser chip, a light switch, and a first waveguide and a second waveguide; the quantum dot layer comprises a plurality of sub-pixels; the laser chip is configured to provide light energy; the light switch comprises a first input end, a first output end and a second output end, and is configured to control the light energy to be divided into first light energy transmitted to the first output end and second light energy transmitted to the second output end, and the first light energy is the same as or different from the second light energy; the first waveguide is connected to at least the first input end and the laser chip, and the second waveguide is connected to the second output end and the sub-pixels. The display device of the application utilizes the waveguide to transmit the light emitted by the laser chip to each sub-pixel, and controls the absorption of the light energy by each sub-pixel through the light switch, so that high-frequency, low-power-consumption and high-brightness display can be realized.

Description

Technical Field

[0001] This application relates to the field of display technology, and more particularly to a display device. Background Technology

[0002] The three main display technologies currently include Liquid Crystal Display (LCD), Organic Light-Emitting Diode (OLED), and Micro Light-Emitting Diode Display (Micro LED). LCD displays suffer from complex panel structures and low optical control efficiency, resulting in poor display quality and significant deficiencies in contrast, response time, and viewing angle. While OLED displays offer better display quality, the instability of organic materials leads to short lifespans and severe burn-in and light-emitting decay issues. Micro LED displays, as the ultimate display technology, currently face challenges in industrialization due to immature manufacturing processes, particularly regarding the consistency of RGB LED brightness decay and mass transfer technology, which are major factors limiting large-scale productization. Summary of the Invention

[0003] This application provides a display device that can achieve high-frequency, low-power, and high-brightness display.

[0004] This application provides a display device, the display device comprising:

[0005] Substrate;

[0006] A quantum dot layer is disposed on one side of the substrate, the quantum dot layer comprising a plurality of sub-pixels;

[0007] At least one laser chip is disposed on one side of the substrate, the laser chip being configured to provide optical energy;

[0008] At least one optical switch is disposed on one side of the substrate. The optical switch includes at least a first input terminal, a first output terminal, and a second output terminal. The optical switch is configured to control the optical energy to be divided into a first optical energy transmitted to the first output terminal and a second optical energy transmitted to the second output terminal, wherein the first optical energy and the second optical energy are the same or different.

[0009] At least one first waveguide is disposed on one side of the substrate, and the first waveguide connects at least the first input terminal and the laser chip; and

[0010] At least one second waveguide is disposed on one side of the substrate, and the second waveguide connects the second output terminal and the sub-pixel.

[0011] In some embodiments, the display device includes a plurality of optical switches, which are arranged along a first direction and connected to adjacent optical switches via a first waveguide. One of the optical switches located at the end is connected to the laser chip via the first waveguide. A plurality of sub-pixels are arranged along the first direction and are connected to the plurality of optical switches one by one.

[0012] In some embodiments, the display device includes a plurality of optical switches and a plurality of laser chips. The plurality of optical switches are arranged in an array along a first direction and a second direction, and the plurality of laser chips are arranged along the second direction. The first direction and the second direction intersect. Among the plurality of optical switches arranged along the first direction, adjacent optical switches are connected through the first waveguide, and one of the optical switches located at the end is connected to the laser chip. A plurality of sub-pixels are arranged in an array along the first direction and the second direction, and are connected to the plurality of optical switches one by one.

[0013] In some embodiments, the display device includes multiple driving periods corresponding to the plurality of laser chips, wherein at least one of the corresponding laser chips emits light energy during each driving period;

[0014] When the laser chip emits the light energy, the first light energy and the second light energy transmitted by the plurality of optical switches connected to the laser chip and arranged along the first direction are both greater than 0;

[0015] Alternatively, the driving period includes multiple sub-driving periods corresponding to the multiple optical switches arranged along the first direction, wherein in each sub-driving period, the second optical energy transmitted by one of the corresponding optical switches is greater than 0, and the second optical energy transmitted by the other optical switches is 0.

[0016] In some embodiments, the optical switch includes a first coupler, a second coupler, and a modulator connected between the first coupler and the second coupler, wherein the first coupler includes a first input terminal connected to the first waveguide, the second coupler includes a first output terminal and a second output terminal connected to the first waveguide, the first output terminal connected to the first waveguide, the second output terminal connected to the second waveguide, and the modulator is configured to perform phase modulation on the beam output from the first coupler.

[0017] In some embodiments, the modulator includes at least a third waveguide and a fourth waveguide, one end of the third waveguide being connected to the first coupler and the other end being connected to the second coupler, and one end of the fourth waveguide being connected to the first coupler and the other end being connected to the second coupler; wherein, when the phase difference between the light beams in the third waveguide and the fourth waveguide is 0, the light passing through the modulator is output from the first output terminal, and when the phase difference between the light beams in the third waveguide and the fourth waveguide is π, the light passing through the modulator is output from the second output terminal.

[0018] In some embodiments, the display device further includes a driving circuit layer disposed on the substrate and located on one side of the quantum dot layer; the modulator further includes at least one modulation electrode located on at least one side of the third waveguide and / or the fourth waveguide, and the modulation electrode is electrically connected to the driving circuit layer.

[0019] In some embodiments, the driving circuit layer includes a thin-film transistor, a common electrode, and an electrical signal output port, wherein the electrical signal output port is connected to the thin-film transistor; wherein the electrical signal output port includes a current output port and / or a voltage output port.

[0020] In some embodiments, the modulator includes at least one first modulation electrode located on one side of the third waveguide and / or the fourth waveguide, with one end of the first modulation electrode connected to the current output port and the other end connected to the common electrode.

[0021] In some embodiments, the modulator includes at least one second modulation electrode and at least one third modulation electrode, the second modulation electrode and the third modulation electrode being located on opposite sides of the third waveguide, one of the second modulation electrode and the third modulation electrode being connected to the voltage output port, and the other being connected to the common electrode;

[0022] And / or, the second modulation electrode and the third modulation electrode are located on opposite sides of the fourth waveguide, one of the second modulation electrode and the third modulation electrode is connected to the voltage output port, and the other is connected to the common electrode.

[0023] This application provides a display device that utilizes waveguides to transmit light emitted from a laser chip to a quantum dot layer. Each sub-pixel in the quantum dot layer converts the received light energy into corresponding visible light, thereby enabling the display device to emit light. Simultaneously, an optical switch is provided between the laser chip and each sub-pixel. This optical switch divides the light energy emitted by the laser chip into a first light energy transmitted to a first output terminal and a second light energy transmitted to a second output terminal. The second light energy is transmitted to the corresponding sub-pixel through a second waveguide, enabling the corresponding sub-pixel to emit light. By controlling the magnitudes of the first and second light energies through the optical switch, the absorption of light energy by each sub-pixel is controlled, thereby achieving uniform brightness across all sub-pixels. Therefore, the display device of this application can achieve high-frequency, low-power, and high-brightness displays. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0026] Figure 1 This is a schematic diagram of a single-row pixel structure of a display device provided in an embodiment of this application;

[0027] Figure 2 This is a partial enlarged schematic diagram of a display device provided in an embodiment of this application;

[0028] Figure 3 yes Figure 2 A schematic diagram of the CC cross-section;

[0029] Figure 4 yes Figure 2 One of the AA cross-sectional schematic diagrams;

[0030] Figure 5 yes Figure 2 Another type of AA cross-section schematic diagram;

[0031] Figure 6 yes Figure 2 BB cross-sectional diagram;

[0032] Figure 7 This is a cross-sectional schematic diagram of one of the display devices provided in the embodiments of this application;

[0033] Figure 8This is a plan view of the optical switch of one of the display devices provided in the embodiments of this application;

[0034] Figure 9 yes Figure 8 A cross-sectional schematic diagram of one of the display devices provided in the embodiment;

[0035] Figure 10 This is a plan view of the optical switch of one of the display devices provided in the embodiments of this application;

[0036] Figure 11 yes Figure 10 A cross-sectional schematic diagram of one of the display devices provided in the embodiment;

[0037] Figure 12 yes Figure 10 A cross-sectional schematic diagram of another display device provided in the embodiment;

[0038] Figure 13 This is a plan view of the optical switch of one of the display devices provided in the embodiments of this application;

[0039] Figure 14 yes Figure 13 A cross-sectional schematic diagram of one of the display devices provided in the embodiment;

[0040] Figure 15 This is a schematic diagram of a pixel array structure of a display device provided in an embodiment of this application;

[0041] Figure 16 This is a schematic diagram of the pixel array structure of another display device provided in an embodiment of this application;

[0042] Figure 17 yes Figure 16 An embodiment provides a timing diagram;

[0043] Figure 18 yes Figure 16 Another timing diagram provided in the embodiment.

[0044] Explanation of reference numerals in the attached figures:

[0045] 100, Substrate; 200, Driving circuit layer; 210, Common electrode; 220, Voltage output port; 230, Current output port; 300, Quantum dot layer; 310, Sub-pixel; 311, Red sub-pixel; 312, Blue sub-pixel; 313, Green sub-pixel; 320, Barrier; 330, Second encapsulation layer; 400, Laser chip structure; 401, First encapsulation layer; 410, Laser chip; 4101, Laser chip substrate; 4102, Laser chip N-electrode; 4103. Laser generating structure; 4104, laser chip P electrode; 420, first waveguide; 430, optical switch; 4301, first input terminal; 4302, first output terminal; 4303, second output terminal; 431, first coupler; 432, modulator; 4321, third waveguide; 4322, fourth waveguide; 4323, modulation electrode; 4324, first modulation electrode; 4325, second modulation electrode; 4326, third modulation electrode; 433, second coupler; 440, second waveguide. Detailed Implementation

[0046] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0047] This application provides a display device; please refer to [reference needed]. Figures 1-6 The display device includes a substrate 100, a quantum dot layer 300, at least one laser chip 410, at least one first waveguide 420, at least one optical switch 430, and at least one second waveguide 440. The quantum dot layer 300 is disposed on one side of the substrate 100 and includes a plurality of sub-pixels 310. The laser chip 410 is disposed on one side of the substrate 100 and is configured to provide light energy. The optical switch 430 is disposed on one side of the substrate 100 and includes a first input terminal 4301, a first output terminal 4302, and a second output terminal 4303. The optical switch 430 is configured to control the light energy to be divided into first light energy transmitted to the first output terminal 4302 and second light energy transmitted to the second output terminal 4303, wherein the first light energy and the second light energy are the same or different. The first waveguide 420 connects at least the first input terminal 4301 and the laser chip 410, and the second waveguide 440 connects the second output terminal 4303 and the sub-pixels 310.

[0048] In this application, the substrate 100 can be a flexible substrate, such as polyimide (PI), or a rigid substrate, such as glass, without limitation.

[0049] In this application, please refer to Figure 6 The quantum dot layer 300 includes a plurality of spaced sub-pixels 310, and each sub-pixel is surrounded by a barrier 320, which defines the area of ​​the sub-pixel 310. In this application, the quantum dot layer 300 may include at least one of red quantum dots, green quantum dots, and blue quantum dots. The quantum dot layer 300 of this application is made of photoluminescent material. Utilizing the principle of photoluminescence, light emitted by the laser chip 410 is transmitted to the sub-pixels 310. After absorbing the light energy, the quantum dot material of the sub-pixels 310 undergoes an energy level transition process, ultimately converting the absorbed light energy into at least one of the corresponding red, green, and blue light, thereby realizing the display of the image on the display device.

[0050] In this application, please refer to Figure 3 The laser chip 410 serves as a light energy source to provide light energy to the sub-pixels. Since laser energy can be modulated at high frequencies, the laser chip 410 can generate light of different energies through modulation to meet the light energy requirements of different colored sub-pixels 310 or different numbers of sub-pixels 310. Furthermore, the laser chip 410 includes, but is not limited to, a laser chip substrate 4101, a laser chip N electrode 4102, a laser generating structure 4103, and a laser chip P electrode 4104, which are sequentially stacked along the substrate thickness direction.

[0051] In this application, the first waveguide 420 and the second waveguide 440 are both optical waveguides, which can guide the light waves emitted by the laser chip 410 to propagate therein. Since the waveguide can transmit light with low loss and fast speed, the light energy emitted by the laser chip 410 can be quickly transmitted to each sub-pixel 310 through the waveguide to realize the complete screen display of the display device.

[0052] In this application, please refer to Figure 2The optical switch 430 is used to control the amount of light energy absorbed by each sub-pixel 310. For example, by controlling the optical switch 430, the light energy transmitted by the laser chip 410 to sub-pixels of different colors can be made different, so that the brightness of each color sub-pixel 310 is consistent, ensuring that the brightness attenuation of different color sub-pixels 310 is consistent. Specifically, the optical switch 430 can be used to control the light energy absorbed by the red, green, and blue sub-pixels to be different, thereby achieving consistent brightness of the red, green, and blue sub-pixels. The optical switch 430 can divide the light energy transmitted by the laser chip 410 into a first light energy transmitted to the first output terminal 4302 and a second light energy transmitted to the second output terminal 4303. The second light energy transmitted to the second output terminal 4303 is transmitted to the corresponding sub-pixel 310 via the second waveguide 440. The first light energy can be greater than the second light energy, or the first light energy can be less than the second light energy, or the first light energy can be equal to the second light energy. The first light energy or the second light energy can be 0. This application can control the magnitude of the first light energy and the second light energy through the optical switch 430, so that different sub-pixels 310 can absorb different light energy.

[0053] In this application, the combination of laser chip 410 with optical switch 430, first waveguide 420 and second waveguide 440 can realize high-frequency, low-power, high-brightness display.

[0054] For further details, please refer to Figures 4-5 The display device also includes a first encapsulation layer 401, which covers the laser chip 410, the first waveguide 420, the optical switch 430, and the second waveguide 440 for protection.

[0055] In some embodiments, please refer to Figure 5 The display device also includes a driving circuit layer 200, which is disposed on the substrate 100 and located on one side of the quantum dot layer 300. The driving circuit layer 200 includes a plurality of thin-film transistors, a common electrode 210, and other metal traces. Each of the plurality of thin-film transistors corresponds one-to-one with a plurality of sub-pixels 310. Each thin-film transistor includes a gate, a semiconductor layer, a source, and a drain, as well as an insulating layer located between the aforementioned film layers. The stacking structure of the film layers of the thin-film transistors can refer to existing technologies and is not specifically limited herein.

[0056] In this application, please refer to Figure 5 The laser chip 410, optical switch 430, first waveguide 420, and second waveguide 440 can be located on the side of the driving circuit layer 200 away from the substrate 100; please refer to Figure 7 The laser chip 410, optical switch 430, first waveguide 420 and second waveguide 440 can be located between the driving circuit layer 200 and the substrate 100, and there are no restrictions on this.

[0057] In some embodiments, please refer to Figure 1 Taking a single row of sub-pixels as an example, multiple sub-pixels 310 are arranged at intervals along the first direction X, that is, arranged in rows along the first direction X; correspondingly, multiple optical switches 430 are arranged at intervals along the first direction X, and adjacent optical switches 430 are connected through a first waveguide 420, and one of the optical switches 430 located at the end is connected to the laser chip 410 through the first waveguide 420, that is, the laser chip 410 and multiple optical switches 430 are connected in series through the first waveguide 420, and the laser chip 410 is located at the end; wherein, multiple sub-pixels 310 correspond one-to-one with multiple optical switches 430, that is, one sub-pixel 310 is connected to one optical switch 430 through a second waveguide 440. In this embodiment, a laser chip 410 can provide light energy to multiple sub-pixels 310. Each sub-pixel 310 is provided with a corresponding light switch 430. The amount of second light energy transmitted to its corresponding sub-pixel 310 is controlled by each light switch 430, so as to control the amount of light energy absorbed by each sub-pixel 310, thereby enabling the independent lighting of each sub-pixel 310 in a row of sub-pixels 310.

[0058] In this application, please refer to Figure 2 The optical switch 430 includes a first input terminal 4301, a first output terminal 4302, and a second output terminal 4303. The first input terminal 4301 is connected to the first waveguide 420, the first output terminal 4302 is connected to the first waveguide 420, and the second output terminal 4303 is connected to the second waveguide 440. Light emitted from the laser chip 410 enters the optical switch 430 through the first input terminal 4301. Through modulation by the optical switch 430, the light can be output from the second output terminal 4303 and transmitted through the second waveguide 440 to the corresponding sub-pixel 310, so that the sub-pixel 310 emits light. When the optical switch 430 is not modulated, the light emitted from the laser chip 410 is directly output from the first output terminal 4302 and enters the first waveguide 420 connected to the first output terminal 4302 for further transmission.

[0059] In some embodiments, please refer to Figure 2 The optical switch 430 includes a first coupler 431, a second coupler 433, and a modulator 432 connected between the first coupler 431 and the second coupler 433. The first coupler 431 includes a first input terminal 4301, which is connected to a first waveguide 420. The second coupler 433 includes a first output terminal 4302 and a second output terminal 4303, which are connected to the first waveguide 420 and the second output terminal 4303 are connected to the second waveguide 440. The modulator 432 is configured to control the amount of light energy transmitted from the laser chip 410 to the sub-pixel 310.

[0060] For further details, please refer to Figure 2 The modulator 432 includes at least a third waveguide 4321 and a fourth waveguide 4322. One end of the third waveguide 4321 is connected to a first coupler 431, and the other end is connected to a second coupler 433. One end of the fourth waveguide 4322 is connected to the first coupler 431, and the other end is connected to the second coupler 433. The third waveguide 4321 and the fourth waveguide 4322 are arranged side by side. The first coupler 431 can split the light input from the first input terminal 4301 into the third waveguide 4321 and the fourth waveguide 4322 for transmission. By modulating the phase difference of the light beams in the third waveguide 4321 and the fourth waveguide 4322, the light passing through the modulator 432 can be controlled to be output from the first output terminal 4302 or the second output terminal 4303 of the second coupler 433. In some other embodiments, the modulator 432 may also include a fifth waveguide, a sixth waveguide, or more waveguides, whose performance is the same as that of the third waveguide 4321 and the fourth waveguide 4322, which will not be described in detail here.

[0061] For details, please refer to Figure 2 The light output from the laser chip 410 is transmitted through the first waveguide 420 to the first input terminal 4301 of the first coupler 431. The first coupler 431 can be a 1*2 multimode interference coupler (1 represents the number of input waveguides, and 2 represents the number of output waveguides), which can split the beam of light transmitted by the laser chip 410 into two beams of light with the same energy and a phase of π / 2. The two beams enter the third waveguide 4321 and the fourth waveguide 4322 respectively, and are transmitted to the second coupler 433. The second coupler 433 can be a 2*2 multimode interference coupler (2 represents the number of input waveguides, and 2 represents the number of output waveguides), which can combine the beams in the third waveguide 4321 and the fourth waveguide 4322 and output them from the first output terminal 4302 or the second output terminal 4303 of the second coupler 433. When the modulator 432 is not adjusted, two beams of light with the same energy and a phase of π / 2 are combined by the second coupler 433 and output from the first output terminal 4302. That is, the phase difference between the beams in the third waveguide 4321 and the fourth waveguide 4322 is 0. When the modulator 432 is adjusted, the phase of the light waves in the third waveguide 4321 and / or the fourth waveguide 4322 can be adjusted. When the phase difference between the beams in the third waveguide 4321 and the fourth waveguide 4322 is π, the light passing through the modulator 432 is output from the second output terminal 4303 and transmitted to the corresponding sub-pixel 310 through the second waveguide 440.

[0062] Because waveguides are sensitive to external factors such as temperature and pressure, changes in these conditions can alter their refractive index, thereby modulating the phase of the light wave propagating within them. The modulator 432 of this application can achieve its phase modulation function through thermal modulation or voltage modulation.

[0063] In some embodiments, please refer to Figure 2 , Figure 4 and Figure 5 The modulator 432 further includes at least one modulation electrode 4323, which is located on at least one side of the third waveguide 4321 or the fourth waveguide 4322, for example, above, below, to the left, or to the right of the third waveguide 4321 or the fourth waveguide 4322. The modulation electrode 4323 can function as a resistor; when current flows through the modulation electrode 4323, it generates heat. This heat causes a change in the refractive index of the material of the third waveguide 4321 or the fourth waveguide 4322, thereby changing the phase difference of the light beams in the third waveguide 4321 and the fourth waveguide 4322. Alternatively, the modulation electrode 4323 can function as an electrode, placing the third waveguide 4321 or the fourth waveguide 4322 between the electric fields generated by the electrodes. The electric fields cause a change in the refractive index of the material of the third waveguide 4321 or the fourth waveguide 4322, thereby changing the phase difference of the light beams in the third waveguide 4321 and the fourth waveguide 4322.

[0064] In some embodiments, the modulation electrode 4323 can be electrically connected to the driving circuit layer 200. For example, the modulation electrode 4323 can be connected to a thin film transistor on the driving circuit layer 200. The thin film transistor provides current or voltage to the modulation electrode 4323, and the magnitude of the provided current or voltage is controlled by the thin film transistor to achieve different modulation of the optical switch 430 corresponding to different sub-pixels 310, so that different sub-pixels 310 absorb different light energy.

[0065] Furthermore, the driving circuit layer 200 also includes an electrical signal output port, which is connected to the thin-film transistor. Specifically, the electrical signal output port includes a current output port 230 and / or a voltage output port 220. The current output port 230 and the voltage output port 220 are connected to the thin-film transistor for connection to the modulation electrode 4323, so that the thin-film transistor can provide current or voltage to the modulation electrode 4323.

[0066] In other embodiments, the display device may not have a driving circuit layer 200, and the modulation electrode 4323 may also be modulated via an external circuit board.

[0067] In one embodiment, please refer to Figures 8-9The modulator 432 includes a first modulation electrode 4324, which is located on one side of the third waveguide 4321. One end of the first modulation electrode 4324 is connected to the current output port 230 on the drive circuit layer 200, and the other end is connected to the common electrode 210 on the drive circuit layer 200. This embodiment uses thermal modulation. When the current output from the thin-film transistor is transmitted to the first modulation electrode 4324 through the current output port 230, the first modulation electrode 4324 acts as a resistive element. When the current passes through it, heat is generated. The heat generated by the first modulation electrode 4324 can change the refractive index of the material of the third waveguide 4321, thereby changing the phase of the light beam in the third waveguide 4321. This causes a phase difference to be formed between the light beams in the third waveguide 4321 and the fourth waveguide 4322. When the phase difference between the light beams in the two waveguides is π, the light beams in the third waveguide 4321 and the fourth waveguide 4322 are combined through the second coupler 433 and output from the second output terminal 4303. The beams are then transmitted through the second waveguide 440 to the corresponding sub-pixel 310 to achieve light emission from the sub-pixel 310. When the thin-film transistor does not output current to the current output port 230, the phase of the beam in the third waveguide 4321 does not change and is the same as the phase of the beam in the fourth waveguide 4322, which is π / 2. The two beams with the same phase in the third waveguide 4321 and the fourth waveguide 4322 are combined by the second coupler 433 and output from the first output terminal 4302.

[0068] In other embodiments, the first modulation electrode 4324 may also be located on one side of the fourth waveguide 4322, with the same structure and principle as described above. Figure 8 The corresponding implementation methods are the same, and will not be described again here.

[0069] In one embodiment, please refer to Figures 10-12 The modulator 432 may include two or more first modulation electrodes 4324. Taking a modulator 432 with two first modulation electrodes 4324 as an example, the two first modulation electrodes 4324 are respectively located on one side of the third waveguide 4321 and the fourth waveguide 4322. One end of each first modulation electrode 4324 is connected to the current output port 230 on the driving circuit layer 200, and the other end is connected to the common electrode 210 on the driving circuit layer 200. In this embodiment, the structure and principle of the modulator 432 are similar to those of the previous one. Figure 8 The corresponding embodiment is the same, except that in this embodiment, both the third waveguide 4321 and the fourth waveguide 4322 are thermally modulated by the first modulation electrode 4324, so that the phase of the light beam in the third waveguide 4321 and the fourth waveguide 4322 is changed.

[0070] For further details, please refer to Figure 8 and Figure 10The first modulation electrode 4324 can be zigzag-shaped, such as arc-shaped. By increasing the length of the first modulation electrode 4324, the resistance of the first modulation electrode 4324 can be increased, generating more heat and improving the phase modulation efficiency of the first modulation electrode 4324. In other embodiments, the first modulation electrode 4324 can also be a straight, curved, or block electrode, and there is no limitation thereto.

[0071] Furthermore, the first modulation electrode 4324 can be located on one side of the third waveguide 4321 or the fourth waveguide 4322 in the third direction Z, so as to increase the coverage area of ​​the first modulation electrode 4324 on the third waveguide 4321 or the fourth waveguide 4322 and improve the modulation efficiency of the first modulation electrode 4324. The third direction Z is the direction perpendicular to the substrate 100.

[0072] In one embodiment, please refer to Figures 13-14 The modulator 432 includes a second modulation electrode 4325 and a third modulation electrode 4326, which are located on opposite sides of a third waveguide 4321, for example, on opposite sides of the third waveguide 4321 in the second direction Y, where the second direction Y is parallel to the substrate 100. One of the second modulation electrode 4325 and the third modulation electrode 4326 is connected to the voltage output port 220, and the other is connected to the common electrode 210. This embodiment uses a voltage modulation method. When the output voltage of the thin-film transistor is transmitted to the second modulation electrode 4325 through the voltage output port 220, a voltage difference is formed between the second modulation electrode 4325 and the third modulation electrode 4326. Under the action of the electric field between the second modulation electrode 4325 and the third modulation electrode 4326, the refractive index of the material of the third waveguide 4321 changes, thereby changing the phase of the light wave in the third waveguide 4321. This causes a phase difference to be formed between the light beams in the third waveguide 4321 and the fourth waveguide 4322. When the phase difference between the light beams in the two waveguides is π, the light beams in the third waveguide 4321 and the fourth waveguide 4322 are combined through the second coupler 433 and output from the second output terminal 4303. The beams are then transmitted through the second waveguide 440 to the corresponding sub-pixel 310 to achieve light emission from the sub-pixel 310. When the thin-film transistor does not output voltage to the voltage output port 220, the phase of the beam in the third waveguide 4321 does not change and is the same as the phase of the beam in the fourth waveguide 4322, which is π / 2. The two beams with the same phase in the third waveguide 4321 and the fourth waveguide 4322 are combined by the second coupler 433 and output from the first output terminal 4302.

[0073] In one embodiment, please refer to Figure 2 , Figure 4 and Figure 5The modulator 432 may include a plurality of second modulation electrodes 4325 and a plurality of third modulation electrodes 4326. Taking a modulator 432 comprising two second modulation electrodes 4325 and two third modulation electrodes 4326 as an example, one pair of second modulation electrodes 4325 and third modulation electrodes 4326 are located on opposite sides of a third waveguide 4321, and another pair of second modulation electrodes 4325 and third modulation electrodes 4326 are located on opposite sides of a fourth waveguide 4322. One of the second modulation electrodes 4325 and third modulation electrodes 4326 is connected to a common electrode 210, and the other is connected to a voltage output port 220. In this embodiment, the structure and principle of the modulator 432 are similar to... Figure 13 The corresponding embodiment is the same, except that in this embodiment, the third waveguide 4321 and the fourth waveguide 4322 are both voltage modulated by the second modulation electrode 4325 and the third modulation electrode 4326, so that the phase of the light beam in the third waveguide 4321 and the fourth waveguide 4322 is changed.

[0074] In this application, different modulation methods are related to the waveguide materials. When thermal modulation is used, the materials of the third waveguide 4321 and the fourth waveguide 4322 can be silicon-based or SiN-based materials; when voltage modulation is used, the materials of the third waveguide 4321 and the fourth waveguide 4322 can be lithium niobate or other materials.

[0075] In the embodiments of this application, a row of sub-pixels 310 may include multiple sub-pixels 310 of different colors. For example, a row of sub-pixels 310 may be formed by arranging red sub-pixels 311, blue sub-pixels 312, and green sub-pixels 313 in sequence. An adjacent red sub-pixel 311, a blue sub-pixel 312, and a green sub-pixel 313 constitute a pixel unit. Since the amount of light energy required for red sub-pixels 311, blue sub-pixels 312, and green sub-pixels 313 to emit light is different, this application uses a laser chip 410 as a light energy source and an optical switch 430 to control the absorption of light energy by each sub-pixel 310. The quantum dot material of the sub-pixel 310 converts the received light energy into red, green, and blue (R, G, B) visible light. The thin-film transistor can provide a modulated driving voltage or current to the corresponding optical switch 430, matching the modulation timing of the laser chip 410 with the control timing of the optical switch 430 to achieve independent control of the brightness of each sub-pixel.

[0076] In some embodiments, please refer to Figure 15The display device includes a pixel array, in which multiple sub-pixels 310 are arranged in an array along a first direction X and a second direction Y, i.e., arranged in rows along the first direction X and in columns along the second direction Y, the first direction X and the second direction Y intersect, and further, the first direction X and the second direction Y can be perpendicular; correspondingly, multiple optical switches 430 are arranged in an array along the first direction X and the second direction Y, wherein, among the multiple optical switches 430 arranged along the first direction X, adjacent optical switches 430 are connected by a first waveguide 420, and one of the optical switches 430 located at the end is connected to a laser chip 410, and the multiple sub-pixels 310 correspond one-to-one with the multiple optical switches 430, i.e., one sub-pixel 310 is connected to one optical switch 430 through a second waveguide 440; the multiple laser chips 410 are arranged along the second direction Y, and one laser chip 410 corresponds to one row of sub-pixels. In this embodiment, the display device includes a plurality of laser chips 410, each laser chip 410 providing light energy to a row of sub-pixels 310. In this embodiment, each row of laser chips 410, light switches 430, and sub-pixels 310 are as described above. Figure 1 The structure and principle of the corresponding embodiments are the same, and will not be described in detail here. This embodiment arrays multiple rows of sub-pixels 310 and multiple laser chips 410, so that each sub-pixel 310 in a plane can be lit independently, achieving a planar overall display effect. For example, by having each row of laser chips 410 work together, and by controlling the modulation electrode 4323 of each optical switch 430 through a corresponding thin-film transistor, the light emission modulation timing of the laser chip 410 is matched with the modulation timing of the optical switch 430 controlled by the active matrix of thin-film transistors, thus achieving a complete display of the image.

[0077] In some embodiments, the display device includes multiple driving periods corresponding to multiple laser chips 410. During each driving period, at least one corresponding laser chip 410 emits light energy. When a laser chip 410 emits light energy, the first light energy and the second light energy transmitted by multiple optical switches 430 arranged along the first direction X connected to the laser chip 410 are both greater than 0, that is, both the first output terminal 4302 and the second output terminal 4303 have light energy output. For example, the laser chip 410 modulates the output of the total energy light required by all sub-pixels 310 in each row within a driving period (such as one frame time). The thin-film transistor driving array outputs the modulation signal of the optical switch 430 corresponding to each sub-pixel 310. By different modulations of the optical switches 430 of all sub-pixels 310 in this row, the total light energy is distributed, and different inputs of light energy are achieved for each sub-pixel 310, so as to achieve independent control of the brightness of each sub-pixel.

[0078] For details, please refer to Figure 16 and Figure 17 , Figure 17 for Figure 16A timing diagram of a pixel array structure, wherein... Figure 17 In this context, Y1 and Y2 refer to the pulse waveforms output by the laser chip, X1-1, X1-2, X1-3...X1-n refer to the pulse waveforms of the optical switches corresponding to each sub-pixel in the first row, and X2-1, X2-2, X2-3...X2-n refer to the pulse waveforms of the optical switches corresponding to each sub-pixel in the second row. Figure 17 The amplitude of the waveform of the optical switch indicates the degree of opening of the second output terminal, and the width of the waveform indicates the opening time of the second output terminal. The waveform of each optical switch is consistent with the voltage / current output waveform of its corresponding thin-film transistor. Figure 17 As can be seen, during one driving period, laser chip Y1 outputs the total energy required by all sub-pixels in the first row. By controlling the opening degree of the second output terminals of the corresponding optical switches X1-1, X1-2, X1-3...X1-n through the corresponding thin-film transistors of each sub-pixel, the second energy transmitted to each sub-pixel in the first row can be different, thus achieving independent control of the brightness of each sub-pixel in the first row. Similarly, during another driving period, laser chip Y2 outputs the total energy required by all sub-pixels in the second row. By controlling the opening degree of the second output terminals of the corresponding optical switches X2-1, X2-2, X2-3...X2-n through the corresponding thin-film transistors of each sub-pixel, the second energy transmitted to each sub-pixel in the second row can be different, thus achieving independent control of the brightness of each sub-pixel in the second row.

[0079] In some embodiments, the display device includes multiple driving periods corresponding to multiple laser chips 410. In each driving period, at least one corresponding laser chip 410 emits light energy. Each driving period includes multiple sub-driving periods corresponding to multiple optical switches 430 arranged along a first direction. In each sub-driving period, the second light energy transmitted by one corresponding optical switch 430 is greater than 0, while the second light energy transmitted by the other optical switches 430 is 0. That is, in a sub-driving period, the light energy of only one optical switch 430 is output from the second output terminal 4303, and the light energy of the other optical switches 430 is output from the first output terminal 4302. For example, in a driving period (such as one frame), the laser chip 410 outputs the light energy required by each sub-pixel 310 from left to right sequentially through modulation. At the same time, the modulation signal of the optical switch 430 corresponding to each sub-pixel 310 in that row is output through the thin-film transistor driving array, so that the optical switches 430 are turned on sequentially from left to right, realizing different inputs of light energy for each sub-pixel 310, thereby achieving independent control of the brightness of each sub-pixel.

[0080] For details, please refer to Figure 16 and Figure 18 , Figure 18 for Figure 16Another timing diagram of the pixel array structure, in which... Figure 18 In this context, Y1 and Y2 refer to the pulse waveforms output by the laser chip, X1-1, X1-2, X1-3...X1-n refer to the pulse waveforms of the optical switches corresponding to each sub-pixel in the first row, and X1-1, X2-2, X2-3...X2-n refer to the pulse waveforms of the optical switches corresponding to each sub-pixel in the second row. Figure 18 In optical switches, a high waveform indicates that the second output terminal is on, and a low waveform indicates that the second output terminal is off. The waveform width indicates the on-time of the second output terminal. The waveform of each optical switch is consistent with the voltage / current output waveform of its corresponding thin-film transistor. Figure 18 As can be seen, each driving period includes multiple sub-driving periods. Within a driving period, laser chip Y1 outputs light energy, which, through the corresponding thin-film transistors of each sub-pixel, controls the second output terminals of the corresponding optical switches X1-1, X1-2, X1-3...X1-n to be turned on in different sub-driving periods. This causes X1-1, X1-2, X1-3...X1-n to be turned on sequentially from left to right along the first direction, thus achieving different second energies transmitted to each sub-pixel in the first row, thereby enabling independent control of the brightness of each sub-pixel in the first row. Similarly, within a driving period, laser chip Y2 outputs light energy, which, through the corresponding thin-film transistors of each sub-pixel, controls the second output terminals of the corresponding optical switches X2-1, X2-2, X2-3...X2-n to be turned on in different sub-driving periods, thus achieving different second energies transmitted to each sub-pixel in the second row, thereby enabling independent control of the brightness of each sub-pixel in the second row.

[0081] This application also provides a method for manufacturing a display device, including:

[0082] S1. Provide a substrate 100;

[0083] The substrate 100 can be a flexible substrate or a rigid substrate.

[0084] S2. A first waveguide 420, a second waveguide 440, and a plurality of optical switches 430 are formed on the substrate 100, and a first encapsulation layer 401 is formed on the first waveguide 420, the second waveguide 440, and the plurality of optical switches 430, wherein adjacent optical switches 430 are connected through the first waveguide 420, and sub-pixel 310 is connected to the optical switch 430 through the second waveguide 440;

[0085] The optical switch 430 includes a first coupler 431, a second coupler 433, and a third waveguide 4321 and a fourth waveguide 4322 located between the first coupler 431 and the second coupler 433. The materials of the first waveguide 420, the second waveguide 440, the third waveguide 4321, and the fourth waveguide 4322 include silicon-based, SiN-based, lithium niobate, etc. The material of the first encapsulation layer 401 can be at least one of inorganic encapsulation materials or organic encapsulation materials.

[0086] S3. A driving circuit layer 200 is formed on the side of the first packaging layer 401 away from the substrate 100;

[0087] The driving circuit layer 200 includes a thin-film transistor, a common electrode 210, a voltage output port 220, and a current output port 230.

[0088] S4. A quantum dot layer 300 is formed on the side of the driving circuit layer 200 away from the first packaging layer 401. The quantum dot layer 300 includes a plurality of spaced sub-pixels 310.

[0089] The steps for forming sub-pixel 310 specifically include:

[0090] A barrier 320 is formed on the side of the driving circuit layer 200 away from the first encapsulation layer 401. The barrier 320 has a plurality of pixel openings arranged at intervals. Sub-pixels 310 are formed in the pixel openings. Then, a second encapsulation layer 330 is formed to cover the sub-pixels 310 and the barrier 320.

[0091] The quantum dot layer 300 is made of quantum dot materials, such as red quantum dot materials, green quantum dot materials, and blue quantum dot materials; the second encapsulation layer 330 is made of at least one of inorganic encapsulation materials or organic encapsulation materials.

[0092] S5. A laser chip 410 is bonded to the end of each row of optical switches 430, wherein the laser chip 410 is connected to the optical switch 430 at the end of each row through a first waveguide 420.

[0093] S6. A third encapsulation layer is formed above the quantum dot layer 300, the laser chip 410, the optical switch 430, the first waveguide 420, and the second waveguide 440 to encapsulate the above structure as a whole.

[0094] The material of the third encapsulation layer can be at least one of inorganic encapsulation materials or organic encapsulation materials.

[0095] In the above-described method for fabricating the display device, the order of steps S2 and S3 can be interchanged, so that the first waveguide 420, the second waveguide 440, and the optical switch 430 are formed on the side of the driving circuit layer 200 away from the substrate 100, as can be referred to... Figure 5and Figure 14 The structure.

[0096] This application provides a display device that utilizes waveguides to transmit light emitted from a laser chip to a quantum dot layer. Each sub-pixel in the quantum dot layer converts the received light energy into corresponding visible light, thereby enabling the display device to emit light. Simultaneously, an optical switch is provided between the laser chip and each sub-pixel. This optical switch divides the light energy emitted by the laser chip into a first light energy transmitted to a first output terminal and a second light energy transmitted to a second output terminal. The second light energy is transmitted to the corresponding sub-pixel through a second waveguide, enabling the corresponding sub-pixel to emit light. By controlling the magnitudes of the first and second light energies through the optical switch, the absorption of light energy by each sub-pixel is controlled, thereby achieving uniform brightness across all sub-pixels. Therefore, the display device of this application can achieve high-frequency, low-power, and high-brightness displays.

[0097] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0098] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0099] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0100] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A display device, characterized in that, include: Substrate; A quantum dot layer is disposed on one side of the substrate, the quantum dot layer comprising a plurality of sub-pixels; At least one laser chip is disposed on one side of the substrate, the laser chip being configured to provide optical energy; At least one optical switch is disposed on one side of the substrate. The optical switch includes at least a first input terminal, a first output terminal, and a second output terminal. The optical switch is configured to control the optical energy to be divided into a first optical energy transmitted to the first output terminal and a second optical energy transmitted to the second output terminal, wherein the first optical energy and the second optical energy are the same or different. At least one first waveguide is disposed on one side of the substrate, and the first waveguide connects at least the first input terminal and the laser chip; and At least one second waveguide is disposed on one side of the substrate, and the second waveguide connects the second output terminal and the sub-pixel; The optical switch includes a first coupler, a second coupler, and a modulator connected between the first coupler and the second coupler. The first coupler includes a first input terminal connected to a first waveguide. The second coupler includes a first output terminal and a second output terminal connected to the first waveguide. The second output terminal is connected to the second waveguide. The modulator is configured to perform phase modulation on the beam output from the first coupler.

2. The display device according to claim 1, characterized in that, The display device includes a plurality of optical switches, which are arranged along a first direction. Adjacent optical switches are connected through a first waveguide, and one of the optical switches located at the end is connected to the laser chip through the first waveguide. The sub-pixels are arranged along the first direction and are connected to the multiple optical switches one by one.

3. The display device according to claim 1, characterized in that, The display device includes a plurality of optical switches and a plurality of laser chips. The plurality of optical switches are arranged in an array along a first direction and a second direction, and the plurality of laser chips are arranged along the second direction. The first direction and the second direction intersect. Among the plurality of optical switches arranged along the first direction, adjacent optical switches are connected through the first waveguide, and one of the optical switches located at the end is connected to the laser chip. The sub-pixels are arranged in an array along the first direction and the second direction, and are connected one-to-one with the multiple optical switches.

4. The display device according to claim 2, characterized in that, The display device includes multiple driving periods corresponding to the multiple laser chips, and in each driving period, at least one of the corresponding laser chips emits the light energy; When the laser chip emits the light energy, the first light energy and the second light energy transmitted by the plurality of optical switches connected to the laser chip and arranged along the first direction are both greater than 0; Alternatively, the driving period includes multiple sub-driving periods corresponding to the multiple optical switches arranged along the first direction, wherein in each sub-driving period, the second optical energy transmitted by one of the corresponding optical switches is greater than 0, and the second optical energy transmitted by the other optical switches is 0.

5. The display device according to claim 1, characterized in that, The modulator includes at least a third waveguide and a fourth waveguide, one end of the third waveguide is connected to the first coupler and the other end is connected to the second coupler, and one end of the fourth waveguide is connected to the first coupler and the other end is connected to the second coupler; Specifically, when the phase difference between the light beams in the third waveguide and the fourth waveguide is 0, the light passing through the modulator is output from the first output terminal; when the phase difference between the light beams in the third waveguide and the fourth waveguide is π, the light passing through the modulator is output from the second output terminal.

6. The display device according to claim 5, characterized in that, The display device further includes a driving circuit layer, which is disposed on the substrate and located on one side of the quantum dot layer; The modulator further includes at least one modulation electrode located on at least one side of the third waveguide and / or the fourth waveguide, and the modulation electrode is electrically connected to the drive circuit layer.

7. The display device according to claim 6, characterized in that, The driving circuit layer includes a thin-film transistor, a common electrode, and an electrical signal output port, wherein the electrical signal output port is connected to the thin-film transistor. The electrical signal output port includes a current output port and / or a voltage output port.

8. The display device according to claim 7, characterized in that, The modulator includes at least one first modulation electrode, which is located on one side of the third waveguide and / or the fourth waveguide. One end of the first modulation electrode is connected to the current output port, and the other end is connected to the common electrode.

9. The display device according to claim 7, characterized in that, The modulator includes at least one second modulation electrode and at least one third modulation electrode, the second modulation electrode and the third modulation electrode being located on opposite sides of the third waveguide, one of the second modulation electrode and the third modulation electrode being connected to the voltage output port, and the other being connected to the common electrode; And / or, the second modulation electrode and the third modulation electrode are located on opposite sides of the fourth waveguide, one of the second modulation electrode and the third modulation electrode is connected to the voltage output port, and the other is connected to the common electrode.

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