Display panel, manufacturing method thereof and display device

Abstract

The invention discloses a display panel, a manufacturing method thereof and a display device. The manufacturing method of the display panel comprises the following steps: forming an anode layer on one side of a substrate; forming a sacrificial layer on one side, away from the substrate, of the anode layer, wherein the included angle between the side surface and the bottom surface of the sacrificial layer is an acute angle; forming a pixel definition layer on the substrate, wherein the surface, deviating from the anode layer, of the sacrificial layer is exposed through the pixel definition layer; the sacrificial layer is removed, a pixel opening is formed in the pixel definition layer, and the pixel opening exposes a part of the anode layer; a light-emitting functional layer is formed on the side, away from the substrate, of the anode layer, the light-emitting functional layer comprises a center part and an edge part arranged around the center part, the thickness of the center part is smaller than that of the edge part, and in the plane view of the display panel, the edge part is overlapped with the side wall of the pixel opening; and forming a cathode layer on one side, away from the anode layer, of the light-emitting functional layer. According to the invention, the film forming uniformity of the light-emitting functional layer in the pixel opening region can be improved, and the pixel light-emitting efficiency and the effective light-emitting area can be improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] Printing the light-emitting functional layer, hole transport layer, organic light-emitting layer and other light-emitting functional layers of the organic light-emitting diode display panel (OLED) is to drop ink into the pixel hole through an inkjet printing device, and evaporate the organic solvent by drying to form various functional films. The traditional pixel opening is generally an obtuse pixel opening design, that is, the angle between the side wall of the pixel opening and the plane where the part of the anode layer exposed to the pixel opening is an obtuse angle.

[0003] However, in the process of forming the light-emitting functional layer by inkjet printing, due to the obtuse pixel opening design and the coffee ring effect, the material of the light-emitting functional layer is easily accumulated at the edge of the pixel opening area, resulting in poor film uniformity in the pixel opening area, affecting the pixel luminous efficiency and effective luminous area.

[0004] Therefore, it is necessary to propose a new technical solution to solve the above technical problems. Summary of the invention

[0005] The purpose of the present application is to provide a display panel and a manufacturing method thereof, and a display device, so as to improve the uniformity of film formation of the light-emitting functional layer located in the pixel opening area, and to improve the pixel light-emitting efficiency and effective light-emitting area.

[0006] To solve the above problems, the technical solution of this application is as follows:

[0007] In a first aspect, the present application proposes a method for manufacturing a display panel, comprising the following steps:

[0008] forming an anode layer on one side of the substrate;

[0009] A sacrificial layer is formed on a side of the anode layer away from the substrate, wherein an angle between a side surface of the sacrificial layer and a side surface of the sacrificial layer close to the anode layer is an acute angle;

[0010] forming a pixel definition layer on the substrate, wherein a surface of the sacrificial layer facing away from the anode layer is exposed through the pixel definition layer;

[0011] The sacrificial layer is removed, and a pixel opening is formed in the pixel definition layer, wherein the pixel opening exposes a portion of the anode layer;

[0012] forming a light-emitting functional layer on a side of the anode layer away from the substrate, the light-emitting functional layer comprising a central portion and an edge portion arranged around the central portion, the central portion having a thickness smaller than that of the edge portion, and the edge portion overlaps with a side wall of the pixel opening in a plan view of the display panel;

[0013] A cathode layer is formed on a side of the light emitting functional layer away from the anode layer.

[0014] In one embodiment of the present application, the step of forming a sacrificial layer on a side of the anode layer away from the substrate comprises:

[0015] forming a first metal film layer on the anode layer;

[0016] coating a photoresist on the first metal film layer to form a first photoresist layer;

[0017] exposing and developing the first photoresist layer to form a first photoresist layer on the first metal film layer;

[0018] Using the first photoresist layer as a mask, patterning the first metal film layer to form the sacrificial layer, wherein the angle between the side surface of the sacrificial layer and the surface of the sacrificial layer close to the anode layer is in a range of 30 degrees to 70 degrees;

[0019] After patterning, the first photoresist layer is removed.

[0020] In one embodiment of the present application, the step of forming a sacrificial layer on a side of the anode layer away from the substrate comprises:

[0021] coating a photoresist on the anode layer to form a second photoresist layer;

[0022] The second photoresist layer is patterned to form the sacrificial layer, and the angle between the side surface of the sacrificial layer and a surface of the sacrificial layer close to the anode layer is in a range of 30 degrees to 70 degrees.

[0023] In one embodiment of the present application, the step of forming a sacrificial layer on a side of the anode layer away from the substrate comprises:

[0024] forming a first material layer on a side of the anode layer away from the substrate, patterning the first material layer to form a first sacrificial layer, wherein an angle between a side surface of the first sacrificial layer and a side surface of the first sacrificial layer close to the anode layer is an acute angle;

[0025] A second material layer is arranged on a side of the first sacrificial layer away from the anode layer, and the second material layer is patterned to form a second sacrificial layer, wherein an angle between a side surface of the second sacrificial layer and a side surface of the second sacrificial layer close to the anode layer is an acute angle, the sacrificial layer comprises the first sacrificial layer and the second sacrificial layer, and an orthographic projection of an edge of a side surface of the first sacrificial layer close to the anode layer on the substrate is located outside an orthographic projection of an edge of a side surface of the second sacrificial layer close to the anode layer on the substrate;

[0026] The step of forming a pixel definition layer on the substrate, wherein a surface of the sacrificial layer facing away from the anode layer is exposed through the pixel definition layer comprises:

[0027] The pixel definition layer surrounds the first sacrificial layer to form a first portion of the pixel opening, and the pixel definition layer surrounds the second sacrificial layer to form a second portion of the pixel opening, wherein a surface of the second sacrificial layer facing away from the anode layer is exposed through the pixel definition layer;

[0028] The step of removing the sacrificial layer comprises:

[0029] removing the second sacrificial layer and the first sacrificial layer;

[0030] The step of forming a light-emitting functional layer on a side of the anode layer away from the substrate comprises:

[0031] forming a first light-emitting functional layer on the anode layer, wherein the first light-emitting functional layer is located in a first portion of the pixel opening, and the first light-emitting functional layer includes a hole injection layer, a hole transport layer and a light-emitting layer;

[0032] A second light-emitting functional layer is formed on the first light-emitting functional layer, wherein the second light-emitting functional layer is located at a second portion of the pixel opening, and the second light-emitting functional layer includes an electron transport layer.

[0033] In one embodiment of the present application, the step of forming a first material layer on a side of the anode layer away from the substrate, and patterning the first material layer to form a first sacrificial layer includes:

[0034] coating a photoresist on the anode layer to form the first material layer;

[0035] The first material layer is patterned to form the first sacrificial layer, wherein an angle between a side surface of the first sacrificial layer and a surface of the first sacrificial layer close to the anode layer is in a range of 30 degrees to 70 degrees.

[0036] In one embodiment of the present application, the step of providing a second material layer on a side of the first sacrificial layer away from the anode layer, and patterning the second material layer to form a second sacrificial layer includes:

[0037] Disposing a second metal film layer on the first sacrificial layer, wherein the second metal film layer is formed into the second material layer;

[0038] coating a photoresist on the second metal film layer to form a third photoresist layer;

[0039] exposing and developing the third photoresist layer to form a third photoresist layer located on the second metal film layer;

[0040] The second metal film layer is patterned using the third photoresist layer as a mask to form the second sacrificial layer, wherein an angle between a side surface of the second sacrificial layer and a surface of the second sacrificial layer close to the anode layer is in a range of 30 to 70 degrees.

[0041] In one embodiment of the present application, the step of forming a sacrificial layer on a side of the anode layer away from the substrate comprises:

[0042] forming a first metal film layer on a side of the anode layer away from the substrate;

[0043] forming a second metal film layer on a side of the first metal film layer away from the substrate, wherein the material of the second metal film layer is different from that of the first metal film layer;

[0044] coating a photoresist on the second metal film layer to form a fourth photoresist layer;

[0045] exposing and developing the fourth photoresist layer to form a fourth photoresist layer located on the second metal film layer;

[0046] Using the fourth photoresist layer as a mask, the first metal film layer and the second metal film layer are etched in one step, wherein the one-step etching uses a first etchant, and the etching rate of the first etchant on the second metal film layer is greater than the etching rate of the first etchant on the first metal film layer; forming a first sacrificial layer located on the side of the anode layer away from the substrate and a second sacrificial layer located on the side of the first sacrificial layer away from the anode layer, the angle between the side of the second sacrificial layer and the side of the second sacrificial layer close to the anode layer is in the range of 30 degrees to 70 degrees, the angle between the side of the first sacrificial layer and the side of the first sacrificial layer close to the anode layer is in the range of 30 degrees to 70 degrees, the sacrificial layer includes the first sacrificial layer and the second sacrificial layer, and the orthographic projection of the edge of the first sacrificial layer close to the anode layer on the substrate is located outside the orthographic projection of the edge of the second sacrificial layer close to the anode layer on the substrate;

[0047] The step of forming a pixel definition layer on the substrate, wherein the pixel definition layer surrounds the sacrificial layer to form a pixel opening comprises:

[0048] The pixel definition layer surrounds the first sacrificial layer to form a first portion of the pixel opening, and the pixel definition layer surrounds the second sacrificial layer to form a second portion of the pixel opening, wherein a surface of the second sacrificial layer facing away from the anode layer is exposed through the pixel definition layer;

[0049] The step of removing the sacrificial layer comprises:

[0050] removing the second sacrificial layer and the first sacrificial layer;

[0051] The step of forming a light-emitting functional layer on a side of the anode layer away from the substrate comprises:

[0052] forming a first light-emitting functional layer on the anode layer, wherein the first light-emitting functional layer is located in a first portion of the pixel opening, and the first light-emitting functional layer includes a hole injection layer, a hole transport layer and a light-emitting layer;

[0053] A second light-emitting functional layer is formed on the first light-emitting functional layer, wherein the second light-emitting functional layer is located at a second portion of the pixel opening, and the second light-emitting functional layer includes an electron transport layer.

[0054] In one embodiment of the present application, the step of forming a light-emitting functional layer on a side of the anode layer away from the substrate includes:

[0055] Using an inkjet printing process to drop a first ink on a side of the anode layer away from the substrate, the first ink comprising an organic solvent and a material of the light-emitting functional layer;

[0056] Performing a drying film-forming treatment on the side of the anode layer away from the substrate after the inkjet printing process to remove the organic solvent, so as to form a light-emitting functional layer on the side of the anode layer away from the substrate;

[0057] The step of forming a cathode layer on a side of the light-emitting functional layer away from the anode layer comprises:

[0058] A cathode layer is formed on a side of the light-emitting functional layer away from the anode layer by using an evaporation process.

[0059] In one embodiment of the present application, the step of forming a pixel definition layer on the substrate, wherein a surface of the sacrificial layer facing away from the anode layer is exposed through the pixel definition layer comprises:

[0060] Coating a photoresist material on the substrate to form a photoresist material layer, wherein the photoresist material layer covers the substrate and the sacrificial layer, and the distance between the surface of the sacrificial layer away from the anode layer and the substrate is greater than the thickness of the portion of the photoresist material layer covering the substrate;

[0061] The photoresist material layer is exposed and developed to form the pixel definition layer, wherein the pixel definition layer surrounds the pixel opening on the periphery of the sacrificial layer, and the surface of the sacrificial layer away from the anode layer is exposed through the pixel definition layer.

[0062] In a second aspect, the present application proposes a display panel, comprising:

[0063] substrate;

[0064] an anode layer, disposed on one side of the substrate;

[0065] A pixel definition layer is disposed on one side of the substrate and covers the anode layer. The pixel definition layer is provided with a pixel opening, the pixel opening exposes a portion of the anode layer, and an angle between a side wall of the pixel opening and a plane where the portion of the anode layer exposed to the pixel opening is located is an acute angle;

[0066] a light-emitting functional layer, disposed on a side of the anode layer away from the substrate, the light-emitting functional layer comprising a central portion and an edge portion disposed around the central portion, the central portion having a thickness smaller than that of the edge portion; and

[0067] A cathode layer, disposed on a side of the light-emitting functional layer away from the anode layer;

[0068] In a plan view of the display panel, the edge portion overlaps a side wall of the pixel opening.

[0069] In one embodiment of the present application, an angle between a side wall of the pixel opening and a plane where a portion of the anode layer exposed to the pixel opening is located is in a range of 30 degrees to 70 degrees.

[0070] In one embodiment of the present application, the pixel opening includes a first portion and a second portion that are connected, the first portion of the pixel opening is disposed on a side of the anode layer away from the substrate and exposes a portion of the anode layer, and the second portion of the pixel opening is disposed on a side of the first portion of the pixel opening away from the anode layer;

[0071] In a plan view of the display panel, a side wall of the first portion of the pixel opening is located outside a side wall of the second portion of the pixel opening, and the edge portion overlaps with the side wall of the first portion of the pixel opening.

[0072] In the third aspect, the present application proposes a display device, including a display panel, the display panel including a substrate, an anode layer, a pixel definition layer, a light-emitting functional layer and a cathode layer; the anode layer is arranged on one side of the substrate; the pixel definition layer is arranged on one side of the substrate and covers the anode layer, the pixel definition layer is provided with a pixel opening, the pixel opening exposes a portion of the anode layer, and the angle between the side wall of the pixel opening and the plane where the portion of the anode layer exposed to the pixel opening is located is an acute angle; the light-emitting functional layer is arranged on the side of the anode layer away from the substrate, the light-emitting functional layer includes a center portion and an edge portion arranged around the center portion, the thickness of the center portion is less than the thickness of the edge portion; the cathode layer is arranged on the side of the light-emitting functional layer away from the anode layer; in a plan view of the display panel, the edge portion overlaps with the side wall of the pixel opening.

[0073] In the present application, a sacrificial layer is formed on the upper surface of the anode layer by adding a process before forming the pixel definition layer, and the angle between the side of the sacrificial layer and the side of the sacrificial layer close to the anode layer is an acute angle. In the step of forming the pixel definition layer, the pixel definition layer surrounds the pixel opening on the surrounding side of the sacrificial layer. At this time, the angle between the side wall of the pixel opening and the plane where the part of the anode layer exposed to the pixel opening is located is an acute angle. The sharp-angle pixel opening design in the present application increases the film-forming area of ​​the pixel without changing the pixel opening area. The light-emitting functional layer formed by inkjet printing forms a thicker edge due to the accumulation of the coffee ring effect, which will be blocked by the side wall of the pixel opening. The film-forming uniformity of the central part of the light-emitting functional layer is improved, which can effectively improve the luminous efficiency and the effective light-emitting area. BRIEF DESCRIPTION OF THE DRAWINGS

[0074] Figure 1 is a schematic diagram of a display panel of the present application;

[0075] Figure 2is a flow chart of a method for manufacturing a display panel of the present application;

[0076] Figure 3 yes Figure 2 The schematic diagram of step S10 in the flowchart of a method for manufacturing a display panel of the present application is shown;

[0077] Figure 4 yes Figure 2 The schematic diagram of step S20 in the flowchart of a method for manufacturing a display panel of the present application is shown;

[0078] Figure 5 yes Figure 2 A schematic diagram of step S31 in a flowchart of a method for manufacturing a display panel of the present application is shown;

[0079] Figure 6 yes Figure 2 The schematic diagram of step S32 in the flowchart of a method for manufacturing a display panel of the present application is shown;

[0080] Figure 7 yes Figure 2 The schematic diagram of step S40 in the flowchart of a method for manufacturing a display panel of the present application is shown;

[0081] Figure 8 yes Figure 2 The schematic diagram of step S50 in the flowchart of a method for manufacturing a display panel of the present application is shown;

[0082] Fig. 9 yes Figure 2 The schematic diagram of step S60 in the flowchart of a method for manufacturing a display panel of the present application is shown;

[0083] Fig.10 is a flowchart of steps S21a to S25a in the method for manufacturing a display panel of the first embodiment of the present application;

[0084] Fig.11 is a flowchart of steps S21b to S22b in the method for manufacturing a display panel according to the second embodiment of the present application;

[0085] Fig.12 is a schematic diagram of a display panel according to a third embodiment of the present application;

[0086] Fig.13 is a schematic diagram of step S21c in the method for manufacturing a display panel according to the third embodiment of the present application;

[0087] Fig.14 is a schematic diagram of step S22c in the method for manufacturing a display panel according to the third embodiment of the present application;

[0088] Fig.15 is a schematic diagram of step S33 in the method for manufacturing a display panel according to the third embodiment of the present application;

[0089] Fig.16 is a schematic diagram of step S41c in the method for manufacturing a display panel of the third embodiment of the present application;

[0090] Fig.17 is a schematic diagram of step S42c in the method for manufacturing a display panel of the third embodiment of the present application;

[0091] Fig.18 is a schematic diagram of step S53 in the method for manufacturing a display panel according to the third embodiment of the present application;

[0092] Fig.19 is a schematic diagram of step S54 in the method for manufacturing a display panel according to the third embodiment of the present application;

[0093] Fig. 20 is a flowchart of step S21c1 to step S21c2 in the method for manufacturing a display panel of the fourth embodiment of the present application;

[0094] Fig.21 is a flowchart of steps S22c1 to S22c4 in the method for manufacturing a display panel of the fifth embodiment of the present application;

[0095] Fig. 22 This is a flowchart of steps S21d to S25d in the method for manufacturing a display panel of the sixth embodiment of the present application. DETAILED DESCRIPTION

[0096] The meanings of the terms used in this specification and claims correspond to the meanings commonly understood by those of ordinary skill in the art to which this application belongs. The terms used in this specification and claims are only for the purpose of facilitating the description and understanding of this application, and are not intended to limit this application to the narrow interpretation of the specific terms used in the specification and claims.

[0097] The present application proposes a display device, which may be a mobile phone, a tablet computer, an e-reader, an electronic display screen, a laptop computer, an augmented reality (AR) or virtual reality (VR) device, a media player, a wearable device, a digital camera, a car navigation system, etc. The display device includes a display panel.

[0098] See also Figure 1The present application proposes a display panel 100, comprising a substrate 10, an anode layer 20, a pixel definition layer 50, a light-emitting functional layer 30 and a cathode layer 41. The anode layer 20 is arranged on one side of the substrate 10. The pixel definition layer 50 is arranged on one side of the substrate 10 and covers the anode layer 20. The pixel definition layer 50 is provided with a pixel opening 60, and the pixel opening 60 exposes a portion of the anode layer 20. The angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle. The light-emitting functional layer 30 is arranged on the side of the anode layer 20 away from the substrate 10, and the light-emitting functional layer 30 includes a central portion 31 and an edge portion 32 arranged around the central portion 31, and the thickness of the central portion 31 is less than the thickness of the edge portion 32. The cathode layer 41 is arranged on the side of the light-emitting functional layer 30 away from the anode layer 20. In the plan view of the display panel 100, the edge portion 32 overlaps with the side wall of the pixel opening 60.

[0099] In this embodiment, the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle. The acute-angle pixel opening 60 design in this application increases the film-forming area of ​​the pixel without changing the area of ​​the pixel opening 60. The thick edge portion 32 of the light-emitting functional layer 30 formed by the coffee ring effect will be blocked by the side wall of the pixel opening 60, and the film-forming uniformity of the central portion 31 of the light-emitting functional layer 30 is improved, which can effectively improve the luminous efficiency and the effective luminous area.

[0100] It is important to understand that the coffee ring effect refers to the phenomenon that when a drop of liquid (such as coffee or tea) falls on a table, its particulate matter forms a dark ring at the edge of the drop after evaporation, which is much darker than the middle area. The reason for this phenomenon is that the evaporation rate at the edge of the drop is greater than that in the central area, resulting in a flow from the center to the outside inside the drop, which brings the solute in the solution to the edge and settles it, eventually forming a ring-shaped deposit. Although the coffee ring effect is named after coffee, it is actually a fairly common phenomenon. As long as there are solid particles suspended in a volatile liquid, or non-volatile substances are dissolved, similar ring structures may be formed.

[0101] Optionally, the anode layer 20 , the light-emitting functional layer 30 and the cathode layer 41 form an organic light-emitting device.

[0102] Optionally, the light-emitting functional layer 30 includes a hole injection layer 33, a hole transport layer 34, an organic light-emitting layer 35 and an electron transport layer 40. The hole injection layer 33 is disposed on the side of the anode layer 20 away from the substrate 10, the hole transport layer 34 is disposed on the side of the hole injection layer 33 away from the anode layer 20, the organic light-emitting layer 35 is disposed on the side of the hole transport layer 34 away from the hole injection layer 33, and the electron transport layer 40 is disposed on the side of the organic light-emitting layer 35 away from the hole transport layer 34.

[0103] Optionally, the substrate 10 includes a substrate 11, a thin film transistor 12, an interlayer dielectric layer 13 and a planar layer 14. The thin film transistor 12 is arranged on the substrate 11, the interlayer dielectric layer 13 covers a plurality of thin film transistors 12, the planar layer 14 covers the interlayer dielectric layer 13, and the anode layer 20 is arranged on the planar layer 14. The anode layer 20 passes through the planar layer 14 and the interlayer dielectric layer 13 and is electrically connected to the drain of the thin film transistor 12. The thin film transistor 12 is used to drive the organic light-emitting device to turn on and off.

[0104] Optionally, the angle between the sidewall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is in a range of 30 degrees to 70 degrees.

[0105] The angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is one of 30 degrees, 31 degrees, 32 degrees, 33 degrees, 34 degrees, 35 degrees, 36 degrees, 37 degrees, 38 degrees, 39 degrees, 40 degrees, 41 degrees, 42 degrees, 43 degrees, 44 degrees, 45 degrees, 46 degrees, 47 degrees, 48 ​​degrees, 49 degrees, 50 degrees, 51 degrees, 52 degrees, 53 degrees, 54 degrees, 55 degrees, 56 degrees, 57 degrees, 58 degrees, 59 degrees, 60 degrees, 61 degrees, 62 degrees, 63 degrees, 64 degrees, 65 degrees, 66 degrees, 67 degrees, 68 degrees, 69 degrees, and 70 degrees.

[0106] As the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located decreases, the area of ​​the edge portion 32 blocked by the side wall of the pixel opening 60 also increases, and the film formation uniformity of the center portion 31 is also better. As the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is increased, the pixel density of the display panel 100 also increases. In order to achieve a better balance between pixel density and film formation uniformity. Preferably, the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is in the range of 35 degrees to 50 degrees.

[0107] See also Figure 2 The present application proposes a method for manufacturing a display panel 100, comprising the following steps:

[0108] Step S10 : forming an anode layer 20 on one side of the substrate 10 .

[0109] See also Figure 3In step S10, after the substrate 10 is manufactured, a metal material layer is formed on one side of the substrate 10, and a photoresist is coated on the metal material layer, and then exposed and developed to form an anode photoresist layer on the metal material layer. The metal material layer is patterned using the anode photoresist layer as a mask to form an anode layer 20. After patterning, the anode photoresist layer is removed.

[0110] Step S20 : ​​forming a sacrificial layer 70 on a side of the anode layer 20 away from the substrate 10 , wherein an angle between a side surface of the sacrificial layer 70 and a surface of the sacrificial layer 70 close to the anode layer 20 is an acute angle.

[0111] See also Figure 4 , in step S20: the shape of the cross-sectional pattern of the sacrificial layer 70 is a regular trapezoid. The width of the sacrificial layer 70 close to the anode layer 20 is greater than the width of the sacrificial layer 70 away from the anode layer 20. The material of the sacrificial layer 70 can be a metal material, or the material of the sacrificial layer 70 can also be a photoresist material, and the angle between the side of the sacrificial layer 70 and the side of the sacrificial layer 70 close to the anode layer 20 is an acute angle, wherein the angle between the side of the sacrificial layer 70 and the side of the sacrificial layer 70 close to the anode layer 20 is in the range of 30 degrees to 70 degrees. The angle between the side surface of the sacrificial layer 70 and the side of the sacrificial layer 70 close to the anode layer 20 is one of 30 degrees, 31 degrees, 32 degrees, 33 degrees, 34 degrees, 35 degrees, 36 degrees, 37 degrees, 38 degrees, 39 degrees, 40 degrees, 41 degrees, 42 degrees, 43 degrees, 44 degrees, 45 degrees, 46 degrees, 47 degrees, 48 ​​degrees, 49 degrees, 50 degrees, 51 degrees, 52 degrees, 53 degrees, 54 degrees, 55 degrees, 56 degrees, 57 degrees, 58 degrees, 59 degrees, 60 degrees, 61 degrees, 62 degrees, 63 degrees, 64 degrees, 65 degrees, 66 degrees, 67 degrees, 68 degrees, 69 degrees, and 70 degrees.

[0112] Step S30 : forming a pixel definition layer 50 on the substrate 10 , and a surface of the sacrificial layer 70 facing away from the anode layer 20 is exposed through the pixel definition layer 50 .

[0113] In step S30: due to the design of the sacrificial layer 70, the pixel definition layer 50 can directly surround the pixel opening 60 on the side of the sacrificial layer 70, and there is no need to set up a mask process to open the pixel opening 60 in the pixel definition layer 50, thereby reducing production costs and improving production efficiency.

[0114] Optionally, step S30 forms a pixel definition layer 50 on the substrate 10, wherein the pixel definition layer 50 surrounds the sacrificial layer 70 to form a pixel opening 60, and includes the following steps:

[0115] Step S31: coating a photoresist material on the substrate 10 to form a photoresist material layer 73, the photoresist material layer 73 covers the substrate 10 and the sacrificial layer 70, and the distance L1 from the surface of the sacrificial layer 70 away from the anode layer 20 to the substrate 10 is greater than the thickness L2 of the portion of the photoresist material layer 73 covering the substrate 10.

[0116] See also Figure 5 In step S31, the sacrificial layer 70 and the photoresist material layer 73 located around the sacrificial layer 70 form a step difference, which can ensure that the angle between the side wall of the subsequently formed pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle.

[0117] Step S32 : exposing and developing the photoresist material layer 73 to form a pixel definition layer 50 . The pixel definition layer 50 surrounds the sacrificial layer 70 to form a pixel opening 60 . The surface of the sacrificial layer 70 facing away from the anode layer 20 is exposed through the pixel definition layer 50 .

[0118] See also Figure 6 In step S32, by setting the distance L1 from the surface of the sacrificial layer 70 away from the anode layer 20 to the substrate 10 to be greater than the thickness L3 of the pixel definition layer 50, the process of setting the pixel opening 60 on the pixel definition layer 50 can be reduced, thereby improving production efficiency and reducing production costs.

[0119] Step S40 : removing the sacrificial layer 70 , forming a pixel opening 60 in the pixel definition layer 50 , and exposing a portion of the anode layer 20 .

[0120] See also Figure 7 In step S40: the sacrificial layer 70 is removed by etching or other methods, and the pixel opening 60 exposes a portion of the anode layer 20. Since the cross-sectional shape of the sacrificial layer 70 is a regular trapezoid, the width L4 of the sacrificial layer 70 close to the anode layer 20 is greater than the width L5 of the sacrificial layer 70 away from the anode layer 20. After the sacrificial layer 70 is removed, the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle.

[0121] Step S50: A light-emitting functional layer 30 is formed on the side of the anode layer 20 away from the substrate 10, wherein the light-emitting functional layer 30 includes a central portion 31 and an edge portion 32 arranged around the central portion 31, wherein the thickness of the central portion 31 is less than the thickness of the edge portion 32, and in a plan view of the display panel 100, the edge portion 32 overlaps with the side wall of the pixel opening 60.

[0122] In step S50: the light-emitting functional layer 30 includes a first light-emitting functional layer and a second light-emitting functional layer. Figure 8, the first light-emitting functional layer is formed by inkjet printing, and the first light-emitting functional layer includes a hole injection layer 33, a hole transport layer 34, and an organic light-emitting layer 35. The second light-emitting functional layer is formed by evaporation, and the second light-emitting functional layer includes an electron transport layer 40. Since the hole injection layer 33, the hole transport layer 34, and the organic light-emitting layer 35 can all be formed by an inkjet printing process. Therefore, during the process of forming the hole injection layer 33, the hole transport layer 34, and the organic light-emitting layer 35 by inkjet printing, the thickness of the edge of the hole injection layer 33, the hole transport layer 34, and the organic light-emitting layer 35 will be greater than the thickness of the center due to the coffee ring effect. In the present application, since the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle, in the plan view of the display panel 100, the side wall of the pixel opening 60 overlaps with the edge portion 32, so that the side wall of the pixel opening 60 can block the edge portion 32 with a thicker film thickness in the light-emitting functional layer 30, and make the electron transport layer 40 contact with the central portion 31 of the light-emitting functional layer 30 with a higher uniformity of film thickness, thereby improving the pixel luminous efficiency and avoiding the electron transport layer 40 from contacting the edge portion 32 of the light-emitting functional layer 30, resulting in excessive edge luminous intensity, affecting the display effect.

[0123] In the subsequent embodiments of the present application, the light-emitting functional layer 30 may be a hole injection layer 33, a hole transport layer 34, an organic light-emitting layer 35, or a combination of the above three, which is not limited here.

[0124] Optionally, step S50: forming a light-emitting functional layer 30 on a side of the anode layer 20 away from the substrate 10 includes:

[0125] Step S51 : using an inkjet printing process to drop a first ink on a side of the anode layer 20 away from the substrate 10 , wherein the first ink includes an organic solvent and a material of the light-emitting functional layer 30 .

[0126] In step S51 , the pixel opening 60 may be dry cleaned before the inkjet printing process to remove foreign particles and foreign matters, improve the cleanliness of the upper surface of the anode layer 20 , and avoid non-uniform film formation due to foreign matters in subsequent film formation.

[0127] Step S52 : performing a drying film-forming treatment on the side of the anode layer 20 away from the substrate 10 after the inkjet printing process to remove the organic solvent, so as to form a light-emitting functional layer 30 on the side of the anode layer 20 away from the substrate 10 .

[0128] In step S52 , the first ink may be baked in a vacuum environment to remove the organic solvent, thereby forming a light-emitting functional layer 30 on a side of the anode layer 20 away from the substrate 10 .

[0129] In one embodiment, the hole injection layer 33, the hole transport layer 34, and the organic light emitting layer 35 in the light emitting functional layer 30 need to be formed by inkjet printing. The specific formation process is as follows:

[0130] A first ink is dropped on a side of the anode layer 20 away from the substrate 10 , and the first ink includes an organic solvent and a material of the hole injection layer 33 .

[0131] The side of the anode layer 20 away from the substrate 10 after the inkjet printing process is dried and film-formed to remove the organic solvent, so as to form a hole injection layer 33 on the side of the anode layer 20 away from the substrate 10 .

[0132] A second ink is dropped on a side of the hole injection layer 33 away from the anode layer 20 , and the second ink includes an organic solvent and a material for the hole transport layer 34 .

[0133] The side of the anode layer 20 away from the substrate 10 after the inkjet printing process is dried and film-formed to remove the organic solvent, so as to form a hole transport layer 34 on the side of the hole injection layer 33 away from the anode layer 20 .

[0134] A third ink is dropped on a side of the hole transport layer 34 away from the anode layer 20 , and the third ink includes an organic solvent and a material of the organic light emitting layer 35 .

[0135] The side of the anode layer 20 away from the substrate 10 after the inkjet printing process is dried and film-formed to remove the organic solvent, so as to form an organic light-emitting layer 35 on the side of the hole transport layer 34 away from the substrate 10 .

[0136] Step S60 : forming a cathode layer 41 on a side of the light-emitting functional layer 30 away from the anode layer 20 .

[0137] See also Fig. 9 In step S60 , a cathode layer 41 is formed on a side of the light-emitting functional layer 30 away from the anode layer 20 by using an evaporation process.

[0138] In the first embodiment of the present application:

[0139] Optionally, the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle.

[0140] Due to the sharp-angle pixel opening 60 design, the hole injection layer 33 in the light-emitting functional layer 30 cannot climb along the side wall of the pixel opening 60. The hole transport layer 34 and the organic light-emitting layer 35 in the light-emitting functional layer 30 are stacked on the hole injection layer 33, which can prevent the hole injection layer 33 from contacting the electron transport layer 40, thereby preventing the organic light-emitting device of the display panel 100 from leaking electricity.

[0141] See also Fig.10In the method for manufacturing the display panel 100 of the first embodiment of the present application:

[0142] Step S20: forming a sacrificial layer 70 on a side of the anode layer 20 away from the substrate 10, comprising the following steps:

[0143] S21a: forming a first metal film layer on the anode layer 20 .

[0144] S22a: coating photoresist on the first metal film layer to form a first photoresist layer.

[0145] In step S22a: the material of the photoresist can be a positive photoresist or a negative photoresist, and the material of the photoresist is not limited here.

[0146] S23a: exposing and developing the first photoresist layer to form a first photoresist layer on the first metal film layer.

[0147] In step S23a: a corresponding photomask is arranged on the first photoresist layer, and the first photoresist layer is exposed using the corresponding photomask as a mask. After exposure, the first photoresist layer is developed to form a first photoresist layer located on the first metal film layer.

[0148] S24a: Using the first photoresist layer as a mask, patterning the first metal film layer to form a sacrificial layer 70, wherein the angle between the side surface of the sacrificial layer 70 and the surface of the sacrificial layer 70 close to the anode layer 20 is in the range of 30 to 70 degrees. The angle is selected from the group consisting of 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, and 70 degrees.

[0149] In step S24a: the first photoresist layer is used as a mask to etch the first metal film layer, and the etching may be wet etching, etching the first metal film layer through a liquid chemical solution, or dry etching, etching the first metal film layer through plasma or reactive gas.

[0150] During the etching process, due to the etching secondary effect of the etching module, the side wall of the graphic profile will be tilted, and the side wall angle is defined as the angle between the inclined side wall and the horizontal substrate 11. In the present application, the angle between the side of the sacrificial layer 70 and the side of the sacrificial layer 70 close to the anode layer 20 is the profile side wall angle. The etching secondary effect refers to the effects of redeposition, re-sputtering and groove bottom opening. If the depth-to-width ratio of the etched groove is relatively small, the sputtered material particles can almost all fly out of the groove. When the depth-to-width ratio of the groove is relatively large, because the sputtered particles have a certain angle distribution, the sputtered particles cannot all fly out of the groove, and some of the particles sputtered at a large angle re-hit the groove wall that has been etched, forming a re-deposition process. On the other hand, the re-deposited material will be sputtered by ions again to form re-sputtering. The two effects of re-deposition and re-sputtering restrict each other, and their balance process becomes the factor that determines the evolution of the shape and inclination of the groove side wall. The main problem caused by the redeposition effect is that the groove width is reduced, which deviates from the width defined by the mask and affects the pattern resolution, which ultimately limits the ability of the ion beam to etch the groove aspect ratio. The intuitive effect of redeposition is the tilting of the sidewall and the narrowing of the etching area. When the ion beam is incident vertically on the substrate, the sidewall of the pattern is relatively steep, and the incident angle of the ion beam to the sidewall is large, forming a grazing state, and the etching rate of the ion beam to the sidewall is low. With the increase of the etching depth, the redeposition forms a certain thickness of the sidewall growth and tilts the sidewall. The incident angle of the ion beam to the sidewall decreases, and the re-sputtering increases accordingly. Among them, the amount of redeposition at a certain position on the etched groove sidewall is related to the ion beam incident angle at that position. Increasing the ion beam incident angle will reduce the ion beam incident angle to the sidewall, reduce the amount of redeposition on the sidewall, and increase the amount of re-sputtering, so that the steepness of the sidewall of the pattern is improved. Therefore, controlling the ion beam incident angle can control the redeposition and re-sputtering effects, and selecting an appropriate ion beam incident angle can increase the sidewall steepness.

[0151] In this embodiment, the angle between the side surface of the sacrificial layer 70 and the side of the sacrificial layer 70 close to the anode layer 20 can be adjusted, thereby achieving control of the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located.

[0152] S25a: After patterning, the first photoresist layer is removed.

[0153] The first photoresist layer can be dissolved or converted into an easily removable substance by chemical solution dissolution or chemical reaction, or the first photoresist layer can be fully exposed by high-energy ultraviolet light, and then developed with a developer to remove the first photoresist layer.

[0154] Step S40: removing the sacrificial layer 70, including the following steps:

[0155] Step S41a: etching the sacrificial layer 70 to remove the sacrificial layer 70, the pixel opening 60 exposes a portion of the anode layer 20, and the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle.

[0156] In step S41a, since the material of the sacrificial layer 70 is a metal material, the sacrificial layer 70 can be removed by dry etching or wet etching. After the sacrificial layer 70 is removed, since the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle, in the light-emitting functional layer 30 subsequently formed by the printing process, the edge portion 32 with a larger thickness can be blocked by the side wall of the pixel opening 60, and the film formation uniformity of the central portion 31 of the light-emitting functional layer 30 is improved, which can effectively improve the luminous efficiency and the effective luminous area.

[0157] In the first embodiment of the present application, a sacrificial layer 70 is formed by using a metal material. During the etching process, the etching conditions can be changed to adjust the angle between the side surface of the sacrificial layer 70 and the side of the sacrificial layer 70 close to the anode layer 20. This has the advantage of accurately controlling the angle between the side surface and the bottom surface of the sacrificial layer 70, thereby reducing the deviation between the actual angle of the side wall of the pixel opening 60 and the preset angle, thereby improving the product yield and the uniformity of the film formation of the organic light-emitting device.

[0158] In the second embodiment of the present application:

[0159] In order to avoid redundancy, the second embodiment of the present application will describe parts different from the first embodiment of the present application.

[0160] The second embodiment of the present application is different from the first embodiment of the present application in that:

[0161] See also Fig.11 In the method for manufacturing the display panel 100 of the second embodiment of the present application:

[0162] Step S20: forming a sacrificial layer 70 on a side of the anode layer 20 away from the substrate 10, comprising the following steps:

[0163] S21b: coating photoresist on the anode layer 20 to form a second photoresist layer.

[0164] In step S21b, the material of the second photoresist layer can be positive photoresist or negative photoresist, which is not limited here. In the subsequent embodiments, the material of the second photoresist layer is positive photoresist as an example for explanation.

[0165] S22b: Patterning the second photoresist layer to form a sacrificial layer 70, wherein the angle between the side surface of the sacrificial layer 70 and the side of the sacrificial layer 70 close to the anode layer 20 is in the range of 30 to 70 degrees. The angle is selected from the group consisting of 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, and 70 degrees.

[0166] In step S22 b , a corresponding photomask is disposed on the second photoresist layer, and the second photoresist layer is exposed using the corresponding photomask as a mask. After the exposure, the second photoresist layer is developed to form a sacrificial layer 70 .

[0167] Optionally, a specific pattern structure may be provided on the mask to define the side profile of the sacrificial layer 70. The specific pattern structure on the mask has the characteristic of gradually changing the exposure light intensity, thereby affecting the tilt angle of the side of the sacrificial layer 70 formed by the second photoresist layer.

[0168] Optionally, since the cross-sectional pattern of the sacrificial layer 70 is a right trapezoid, the width of the side of the sacrificial layer 70 away from the anode layer 20 is smaller than the width of the side of the sacrificial layer 70 close to the anode layer 20. During the exposure process, the side of the sacrificial layer 70 away from the anode layer 20 can be shielded by a mask, and the exposure intensity of the corresponding side of the sacrificial layer 70 can be gradually adjusted, wherein the exposure intensity corresponding to the portion of the side of the sacrificial layer 70 with a smaller thickness is stronger, and the exposure intensity corresponding to the portion of the side of the sacrificial layer 70 with a larger thickness is weaker, thereby adjusting the inclination angle of the side of the sacrificial layer 70.

[0169] Optionally, the photomask may be a grayscale mask. The grayscale mask side pattern structure has a structure that allows the exposure light intensity to change gradually. During exposure, a gradual exposure light intensity can be formed on the side of the mask pattern. The change in exposure light intensity can change the morphology of the side of the sacrificial layer 70, so the side morphology of the sacrificial layer 70 can be defined.

[0170] Step S40: removing the sacrificial layer 70, including the following steps:

[0171] Step S41b: Etching the sacrificial layer 70 to remove the sacrificial layer 70, the pixel opening 60 exposes a portion of the anode layer 20, the width of the pixel opening 60 increases from an end of the pixel opening 60 away from the anode layer 20 to an end of the pixel opening 60 close to the anode layer 20, and the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle.

[0172] In step S41b, since the material of the sacrificial layer 70 is photoresist, the sacrificial layer 70 can be removed by exposure and development. After the sacrificial layer 70 is removed, since the angle between the side wall of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle, in the subsequent light-emitting functional layer 30 formed by the printing process, the thicker edge portion 32 can be blocked by the side wall of the pixel opening 60, and the film formation uniformity of the central portion 31 of the light-emitting functional layer 30 is improved, which can effectively improve the light-emitting efficiency and the effective light-emitting area.

[0173] In the second embodiment of the present application, in the subsequent process of removing the sacrificial layer 70, since the material of the sacrificial layer 70 is photoresist, the sacrificial layer 70 can be removed by exposure and development, thereby avoiding the surface of the anode layer 20 away from the substrate 10 being damaged and uneven due to etching in the process of removing the sacrificial layer 70 by dry etching or wet etching. It can also prevent the anode layer 20 from turning black due to plasma bombardment, thereby improving the front light extraction efficiency and display effect of the organic light-emitting device.

[0174] In the third embodiment of the present application:

[0175] In order to avoid redundancy, the third embodiment of the present application will describe parts different from those of the first embodiment of the present application.

[0176] The display panel 100 of the third embodiment of the present application is different from the display panel 100 of the first embodiment of the present application in that:

[0177] See also Fig.12 The pixel opening 60 includes a first portion 61 and a second portion 62 that are connected. The first portion 61 of the pixel opening 60 is disposed on a side of the anode layer away from the substrate 10 and exposes a portion of the anode layer 20. The second portion 62 of the pixel opening 60 is disposed on a side of the first portion 61 of the pixel opening 60 away from the anode layer 20.

[0178] In a plan view of the display panel, the sidewall of the first portion 61 of the pixel opening 60 is located outside the sidewall of the second portion 62 of the pixel opening 60 , and the edge portion 32 overlaps the sidewall of the first portion 61 of the pixel opening 60 .

[0179] In this embodiment, the light-emitting functional layer 30 includes a first light-emitting functional layer and a second light-emitting functional layer. The first light-emitting functional layer is formed by inkjet printing, and the first light-emitting functional layer includes a hole injection layer 33, a hole transport layer 34, and an organic light-emitting layer 35. The second light-emitting functional layer is formed by evaporation, and the second light-emitting functional layer includes an electron transport layer 40. The electron transport layer 40 is connected to the organic light-emitting layer 35 exposed to the second portion 62 of the pixel opening 60.

[0180] In this embodiment, the first light-emitting functional layer formed by inkjet printing forms a thicker edge portion due to the accumulation of the coffee ring effect, which will be blocked by the side wall of the first part 61 of the pixel opening 60, and the side wall of the second part 62 of the pixel opening 60 can further block the portion of the thicker edge portion of the first light-emitting functional layer that is not blocked by the side wall of the first part 61. On the other hand, the design of the second part 62 of the pixel opening 60 can make the electron transport layer 40 only connected to the organic light-emitting layer 35 exposed to the second part 62 of the pixel opening 60, so that the carriers can recombine and emit light in the center part 31 with better film uniformity, avoiding the recombination of carriers in the thicker edge part 32 to prevent the pixel from emitting light with bright edges and dark in the middle. The uniformity of film formation in the center part 31 of the light-emitting functional layer 30 is further improved, and the luminous efficiency and effective luminous area can be further improved.

[0181] The manufacturing method of the display panel 100 of the third embodiment of the present application is different from the manufacturing method of the display panel 100 of the first embodiment of the present application in that:

[0182] In the method for manufacturing the display panel 100 of the third embodiment of the present application:

[0183] Step S20: forming a sacrificial layer 70 on a side of the anode layer 20 away from the substrate 10, comprising the following steps:

[0184] See also Fig.13 Step S21c: forming a first material layer on the side of the anode layer 20 away from the substrate 10, and patterning the first material layer to form a first sacrificial layer 71, wherein the angle between the side surface of the first sacrificial layer 71 and the side surface of the first sacrificial layer 71 close to the anode layer 20 is an acute angle.

[0185] See also Fig.14, step S22c: a second material layer is arranged on a side of the first sacrificial layer 71 away from the anode layer 20, and the second material layer is patterned to form a second sacrificial layer 72, wherein an angle between a side surface of the second sacrificial layer 72 and a surface of the second sacrificial layer 72 close to the anode layer 20 is an acute angle, and the sacrificial layer 70 comprises a first sacrificial layer 71 and a second sacrificial layer 72, and an orthographic projection of an edge of the first sacrificial layer 71 close to the anode layer 20 on the substrate 10 is located outside the orthographic projection of an edge of the second sacrificial layer 72 close to the anode layer 20 on the substrate 10.

[0186] In step S21c, the material of the first sacrificial layer 71 may be photoresist or metal material, which is not limited here.

[0187] In step S22c, the material of the second sacrificial layer 72 may be photoresist or metal material, which is not limited here.

[0188] Step S30: forming a pixel definition layer 50 on the substrate 10, wherein the surface of the sacrificial layer 70 facing away from the anode layer 20 is exposed through the pixel definition layer 50, comprising the following steps:

[0189] Step S33: The pixel definition layer 50 surrounds the first sacrificial layer 71 to form a first portion 61 of the pixel opening 60 , and the pixel definition layer 50 surrounds the second sacrificial layer 72 to form a second portion 62 of the pixel opening 60 , and the surface of the second sacrificial layer 72 facing away from the anode layer 20 is exposed through the pixel definition layer 50 .

[0190] See also Fig.15 In step S33 , since the first sacrificial layer 71 and the second sacrificial layer 72 are stacked on the anode layer 20 , the pixel definition layer 50 surrounds the first sacrificial layer 71 and the second sacrificial layer 72 to form the first part 61 and the second part 62 of the pixel opening 60 .

[0191] Step S40: removing the sacrificial layer 70, including the following steps:

[0192] Step S41c: removing the second sacrificial layer 72 .

[0193] See also Fig.16 In step S41c, when the material of the second sacrificial layer 72 is metal, the second sacrificial layer 72 is removed by etching. When the material of the second sacrificial layer 72 is photoresist, the second sacrificial layer 72 is removed by exposure and development, and the second portion 62 of the pixel opening 60 is formed in the pixel definition layer 50.

[0194] Step S42c: removing the first sacrificial layer 71. The angle between the side wall of the first portion 61 of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle, and the angle between the side wall of the second portion 62 of the pixel opening 60 and the plane where the portion of the anode layer 20 exposed to the pixel opening 60 is located is an acute angle. In the plan view of the display panel 100, the side wall of the first portion 61 of the pixel opening 60 is located outside the side wall of the second portion 62 of the pixel opening 60.

[0195] See also Fig.17 In step S42c, when the material of the first sacrificial layer 71 is metal, the first sacrificial layer 71 is removed by etching. When the material of the first sacrificial layer 71 is photoresist, the first sacrificial layer 71 is removed by exposure and development to form the first portion 61 of the pixel opening 60 in the pixel opening 60.

[0196] Step S50: forming a light-emitting functional layer 30 on a side of the anode layer 20 away from the substrate 10, comprising the following steps:

[0197] See also Fig.18 , step S53: forming a first light-emitting functional layer on the anode layer 20, the first light-emitting functional layer is located in the first part of the pixel opening, and the first light-emitting functional layer includes a hole injection layer, a hole transport layer and a light-emitting layer.

[0198] The first light-emitting functional layer is formed by inkjet printing, and the first light-emitting functional layer includes a hole injection layer 33, a hole transport layer 34, and an organic light-emitting layer 35. The first light-emitting functional layer formed by inkjet printing forms a thicker edge portion due to the coffee ring effect, which will be blocked by the side wall of the first part 61 of the pixel opening 60, and the side wall of the second part 62 of the pixel opening 60 can further block the portion of the thicker edge portion of the first light-emitting functional layer that is not blocked by the side wall of the first part 61. The uniformity of film formation of the central part 31 of the light-emitting functional layer 30 is further improved, and the luminous efficiency and effective luminous area are further improved.

[0199] See also Fig.19 , step S54: forming a second light-emitting functional layer on the first light-emitting functional layer, the second light-emitting functional layer is located at a second part of the pixel opening, and the second light-emitting functional layer includes an electron transport layer.

[0200] The design of the second portion 62 of the pixel opening 60 allows the electron transport layer 40 to be connected only to the organic light-emitting layer 35 exposed to the second portion 62 of the pixel opening 60, so that carriers can recombine and emit light in the center portion 31 with good film uniformity, avoiding carriers from recombinating and emitting light in the thicker edge portion 32, and preventing the pixel from emitting light with bright edges and dark in the middle. The film uniformity of the center portion 31 of the light-emitting functional layer 30 is further improved, and the luminous efficiency and effective luminous area can be further improved.

[0201] In the fourth embodiment of the present application:

[0202] In order to avoid redundancy, the fourth embodiment of the present application will describe the parts different from the third embodiment of the present application.

[0203] The fourth embodiment of the present application is different from the third embodiment of the present application in that:

[0204] See also Fig.18 Step S21c: forming a first material layer on a side of the anode layer 20 away from the substrate 10, and patterning the first material layer to form a first sacrificial layer 71, including the following steps:

[0205] Step S21c1: forming a coating photoresist on the anode layer 20 to form a first material layer.

[0206] In step S21c1, the material of the first material layer may be a positive photoresist or a negative photoresist, and the description is given by taking the first material layer being a positive photoresist as an example.

[0207] Step S21c2: Patterning the first material layer to form a first sacrificial layer 71, wherein the angle between the side surface of the first sacrificial layer 71 and the surface of the first sacrificial layer 71 close to the anode layer 20 is in the range of 30 to 70 degrees. The angle is selected from the group consisting of 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, and 70 degrees.

[0208] In step S21c2, a corresponding photomask is disposed on the first material layer, and the first material layer is exposed using the corresponding photomask as a mask. After exposure, the first material layer is developed to form a first sacrificial layer 71 located on the anode layer 20.

[0209] When the material of the first sacrificial layer 71 is a metal material, in the process of removing the first sacrificial layer 71 by etching, the metal etchant may damage the upper surface of the anode layer 20, thereby affecting the light-emitting effect.

[0210] The fourth embodiment of the present application can avoid the damage of the upper surface of the anode layer 20 by the metal etchant by setting the material of the first sacrificial layer 71 to be photoresist, thereby improving the light-emitting effect of the organic light-emitting device. Since the material of the first sacrificial layer 71 is photoresist, which is different from the metal material of the anode layer 20, the upper surface of the anode layer 20 can be prevented from being damaged during the process of removing the first sacrificial layer 71 by exposure and development, thereby improving the light-emitting effect of the organic light-emitting device.

[0211] In the fifth embodiment of the present application:

[0212] In order to avoid redundancy, the fifth embodiment of the present application will describe the parts different from the fourth embodiment of the present application.

[0213] The fifth embodiment of the present application is different from the fourth embodiment of the present application in that:

[0214] See also Fig.18 Step S22c: a second material layer is disposed on a side of the first sacrificial layer 71 away from the anode layer 20, and the second material layer is patterned to form a second sacrificial layer 72, comprising the following steps:

[0215] Step S22c1: a second metal film layer is disposed on the first sacrificial layer 71, and the second metal film layer is formed into a second material layer.

[0216] Step S22c2: coating photoresist on the second metal film layer to form a third photoresist layer.

[0217] In step S22c2: the material of the photoresist can be a positive photoresist or a negative photoresist, and the material of the photoresist is not limited here.

[0218] Step S22c3: exposing and developing the third photoresist layer to form a third photoresist layer on the second metal film layer.

[0219] In step S22c3: a corresponding photomask is set on the third photoresist layer, and the third photoresist layer is exposed using the corresponding photomask as a mask. After exposure, the third photoresist layer is developed to form a third photoresist layer located on the second metal film layer.

[0220] Step S22c4: Using the third photoresist layer as a mask, patterning the second metal film layer to form a second sacrificial layer 72, wherein the angle between the side surface of the second sacrificial layer 72 and the side of the second sacrificial layer 72 close to the anode layer 20 is in the range of 30 to 70 degrees. The angle is selected from 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, and 70 degrees.

[0221] In step S22c4: the second metal film layer is etched using the third photoresist layer as a mask. The etching may be wet etching, using a liquid chemical solution to etch the second metal film layer. The etching may also be dry etching, using plasma or reactive gas to etch the second metal film layer.

[0222] Since in the fourth embodiment of the present application, a first sacrificial layer 71 made of a photoresist is provided between the anode layer 20 and the second sacrificial layer 72, even if a metal material is selected as the material of the second sacrificial layer 72, the first sacrificial layer 71 made of a photoresist can protect the upper surface of the anode layer 20 from being damaged during the process of removing the second sacrificial layer 72 using a metal etchant. At the same time, when the materials of the first sacrificial layer 71 and the second sacrificial layer 72 are different, the etching patterns of the two can be better controlled to form a sacrificial layer 70 of a specific pattern to meet the production requirements of the product.

[0223] In the sixth embodiment of the present application:

[0224] In order to avoid redundancy, the sixth embodiment of the present application will describe the parts that are different from the third embodiment of the present application.

[0225] The sixth embodiment of the present application is different from the third embodiment of the present application in that:

[0226] See also Fig.19 Step S20: forming a sacrificial layer 70 on a side of the anode layer 20 away from the substrate 10, comprising the following steps:

[0227] Step S21d: forming a first metal film layer on a side of the anode layer 20 away from the substrate 10 .

[0228] In step S21d, the material of the first metal film layer is a metal material.

[0229] Step S22d: forming a second metal film layer on a side of the first metal film layer away from the substrate 10 , wherein the material of the second metal film layer is different from that of the first metal film layer.

[0230] In step S22d, the material of the second metal film layer is a metal material.

[0231] Step S23d: coating photoresist on the second metal film layer to form a fourth photoresist layer.

[0232] In step S23d, the material of the fourth photoresist layer may be a positive photoresist or a negative photoresist.

[0233] Step S24d: exposing and developing the fourth photoresist layer to form a fourth photoresist layer on the second metal film layer.

[0234] In step S24d, a corresponding photomask is disposed on the fourth photoresist layer, and the fourth photoresist layer is exposed using the corresponding photomask as a mask. After exposure, the fourth photoresist layer is developed to form a fourth photoresist layer located on the second metal film layer.

[0235] Step S25d: using the fourth photoresist layer as a mask, performing one-step etching on the first metal film layer and the second metal film layer, wherein the one-step etching uses a first etchant, and the etching rate of the first etchant on the second metal film layer is greater than the etching rate of the first etchant on the first metal film layer; forming a first sacrificial layer 71 located on the side of the anode layer 20 away from the substrate 10 and a second sacrificial layer 72 located on the side of the first sacrificial layer 71 away from the anode layer 20, wherein the angle between the side surface of the second sacrificial layer 72 and the side surface of the second sacrificial layer 72 close to the anode layer 20 is in the range of 30 degrees to 70 degrees, and the angle between the side surface of the first sacrificial layer 71 and the side surface of the first sacrificial layer 71 close to the anode layer 20 is in the range of 30 degrees to 70 degrees, and the sacrificial layer 70 includes the first sacrificial layer 71 and the second sacrificial layer 72, and the orthographic projection of the edge of the first sacrificial layer 71 close to the anode layer 20 on the substrate 10 is located outside the orthographic projection of the edge of the second sacrificial layer 72 close to the anode layer 20 on the substrate 10.

[0236] In step S25d, the material of the second metal film layer is aluminum, the material of the first metal film layer is iron, and the etchant is hydrofluoric acid (HF) as an example for explanation. Hydrofluoric acid is a strong acid that can react with a variety of metals. For aluminum, hydrofluoric acid can quickly remove the aluminum oxide layer, while for iron, the etching rate of hydrofluoric acid is relatively low. Therefore, hydrofluoric acid can be used for rapid etching of aluminum, while the etching rate of iron is relatively slow. In the process of etching with the fourth photoresist layer as a mask, the etching rate of the second metal film layer is faster, and the width of the cross-sectional pattern of the formed second sacrificial layer 72 is shorter. The etching rate of the first metal film layer is slower, and the width of the cross-sectional pattern of the formed first sacrificial layer 71 is longer. In the etching process, with the fourth photoresist layer as a mask, due to the faster etching rate of the second metal film layer, the side of the second metal film layer is overetched (Over Etch), and in the plan view of the display panel 100, the side of the first sacrificial layer 71 is located outside the side of the second sacrificial layer 72. The one-step etching method can reduce one photomask and one photolithography process, thereby reducing production costs.

[0237] Optionally, the material of the second metal film layer may be aluminum, the material of the first metal film layer may be iron, and the etchant may be a sodium hydroxide solution. The reaction rate of aluminum with the sodium hydroxide solution is faster than the reaction rate of iron with the sodium hydroxide solution.

[0238] Optionally, the material of the second metal film layer may be aluminum, the material of the first metal film layer may be iron, and the etchant may be nitric acid. The etching rate of aluminum in nitric acid is generally faster than that of iron in nitric acid.

[0239] Optionally, the material of the second metal film layer may be aluminum, the material of the first metal film layer may be iron, and the etchant may be phosphoric acid. The etching rates of aluminum and iron may be controlled by adjusting the concentration and temperature of phosphoric acid.

[0240] In the step of removing the sacrificial layer 70 , the second sacrificial layer 72 and the first sacrificial layer 71 may be removed in one step by wet etching or dry etching.

[0241] The above is a detailed description of the specific implementation of the present application. The above implementation disclosed in the present application is only the preferred implementation of the present application. For ordinary technicians in this field, many modifications and improvements can be made without departing from the concept of the present application. These modifications and improvements all fall within the scope of protection defined by the claims of the present application.

Claims

1. A method for manufacturing a display panel, characterized in that: The following steps are involved: forming an anode layer on one side of the substrate; A sacrificial layer is formed on a side of the anode layer away from the substrate, wherein an angle between a side surface of the sacrificial layer and a side surface of the sacrificial layer close to the anode layer is an acute angle; forming a pixel definition layer on the substrate, wherein a surface of the sacrificial layer facing away from the anode layer is exposed through the pixel definition layer; The sacrificial layer is removed, and a pixel opening is formed in the pixel definition layer, wherein the pixel opening exposes a portion of the anode layer; forming a light-emitting functional layer on a side of the anode layer away from the substrate, the light-emitting functional layer comprising a central portion and an edge portion arranged around the central portion, the central portion having a thickness smaller than that of the edge portion, and the edge portion overlaps with a side wall of the pixel opening in a plan view of the display panel; A cathode layer is formed on a side of the light emitting functional layer away from the anode layer.

2. The method for manufacturing a display panel according to claim 1, wherein: The step of forming a sacrificial layer on a side of the anode layer away from the substrate comprises: forming a first metal film layer on the anode layer; coating a photoresist on the first metal film layer to form a first photoresist layer; exposing and developing the first photoresist layer to form a first photoresist layer on the first metal film layer; Using the first photoresist layer as a mask, patterning the first metal film layer to form the sacrificial layer, wherein the angle between the side surface of the sacrificial layer and the side of the sacrificial layer close to the anode layer is in a range of 30 degrees to 70 degrees; After patterning, the first photoresist layer is removed.

3. The method for manufacturing a display panel according to claim 1, wherein: The step of forming a sacrificial layer on a side of the anode layer away from the substrate comprises: coating a photoresist on the anode layer to form a second photoresist layer; The second photoresist layer is patterned to form the sacrificial layer, and the angle between the side surface of the sacrificial layer and a surface of the sacrificial layer close to the anode layer is in a range of 30 degrees to 70 degrees.

4. The method for manufacturing a display panel according to claim 1, wherein: The step of forming a sacrificial layer on a side of the anode layer away from the substrate comprises: forming a first material layer on a side of the anode layer away from the substrate, patterning the first material layer to form a first sacrificial layer, wherein an angle between a side surface of the first sacrificial layer and a side surface of the first sacrificial layer close to the anode layer is an acute angle; A second material layer is arranged on a side of the first sacrificial layer away from the anode layer, and the second material layer is patterned to form a second sacrificial layer, wherein an angle between a side surface of the second sacrificial layer and a side surface of the second sacrificial layer close to the anode layer is an acute angle, the sacrificial layer comprises the first sacrificial layer and the second sacrificial layer, and an orthographic projection of an edge of a side surface of the first sacrificial layer close to the anode layer on the substrate is located outside an orthographic projection of an edge of a side surface of the second sacrificial layer close to the anode layer on the substrate; The step of forming a pixel definition layer on the substrate, wherein a surface of the sacrificial layer facing away from the anode layer is exposed through the pixel definition layer comprises: The pixel definition layer surrounds the first sacrificial layer to form a first portion of the pixel opening, and the pixel definition layer surrounds the second sacrificial layer to form a second portion of the pixel opening, wherein a surface of the second sacrificial layer facing away from the anode layer is exposed through the pixel definition layer; The step of removing the sacrificial layer comprises: removing the second sacrificial layer and the first sacrificial layer; The step of forming a light-emitting functional layer on a side of the anode layer away from the substrate comprises: forming a first light-emitting functional layer on the anode layer, wherein the first light-emitting functional layer is located in a first portion of the pixel opening, and the first light-emitting functional layer includes a hole injection layer, a hole transport layer and a light-emitting layer; A second light-emitting functional layer is formed on the first light-emitting functional layer, wherein the second light-emitting functional layer is located at a second portion of the pixel opening, and the second light-emitting functional layer includes an electron transport layer.

5. The method for manufacturing a display panel according to claim 4, wherein: The step of forming a first material layer on a side of the anode layer away from the substrate and patterning the first material layer to form a first sacrificial layer comprises: coating a photoresist on the anode layer to form the first material layer; The first material layer is patterned to form the first sacrificial layer, wherein an angle between a side surface of the first sacrificial layer and a surface of the first sacrificial layer close to the anode layer is in a range of 30 degrees to 70 degrees.

6. The method for manufacturing a display panel according to claim 4, wherein: The step of disposing a second material layer on a side of the first sacrificial layer away from the anode layer and patterning the second material layer to form a second sacrificial layer comprises: Disposing a second metal film layer on the first sacrificial layer, wherein the second metal film layer is formed into the second material layer; coating a photoresist on the second metal film layer to form a third photoresist layer; exposing and developing the third photoresist layer to form a third photoresist layer located on the second metal film layer; The second metal film layer is patterned using the third photoresist layer as a mask to form the second sacrificial layer, wherein an angle between a side surface of the second sacrificial layer and a surface of the second sacrificial layer close to the anode layer is in a range of 30 to 70 degrees.

7. The method for manufacturing a display panel according to claim 1, wherein: The step of forming a sacrificial layer on a side of the anode layer away from the substrate comprises: forming a first metal film layer on a side of the anode layer away from the substrate; forming a second metal film layer on a side of the first metal film layer away from the substrate, wherein the material of the second metal film layer is different from that of the first metal film layer; coating a photoresist on the second metal film layer to form a fourth photoresist layer; exposing and developing the fourth photoresist layer to form a fourth photoresist layer located on the second metal film layer; Using the fourth photoresist layer as a mask, the first metal film layer and the second metal film layer are etched in one step, wherein the one-step etching uses a first etchant, and the etching rate of the first etchant on the second metal film layer is greater than the etching rate of the first etchant on the first metal film layer; forming a first sacrificial layer located on the side of the anode layer away from the substrate and a second sacrificial layer located on the side of the first sacrificial layer away from the anode layer, the angle between the side of the second sacrificial layer and the side of the second sacrificial layer close to the anode layer is in the range of 30 degrees to 70 degrees, the angle between the side of the first sacrificial layer and the side of the first sacrificial layer close to the anode layer is in the range of 30 degrees to 70 degrees, the sacrificial layer includes the first sacrificial layer and the second sacrificial layer, and the orthographic projection of the edge of the first sacrificial layer close to the anode layer on the substrate is located outside the orthographic projection of the edge of the second sacrificial layer close to the anode layer on the substrate; The step of forming a pixel definition layer on the substrate, wherein the pixel definition layer surrounds the sacrificial layer to form a pixel opening comprises: The pixel definition layer surrounds the first sacrificial layer to form a first portion of the pixel opening, and the pixel definition layer surrounds the second sacrificial layer to form a second portion of the pixel opening, wherein a surface of the second sacrificial layer facing away from the anode layer is exposed through the pixel definition layer; The step of removing the sacrificial layer comprises: removing the second sacrificial layer and the first sacrificial layer; The step of forming a light-emitting functional layer on a side of the anode layer away from the substrate comprises: forming a first light-emitting functional layer on the anode layer, wherein the first light-emitting functional layer is located in a first portion of the pixel opening, and the first light-emitting functional layer includes a hole injection layer, a hole transport layer and a light-emitting layer; A second light-emitting functional layer is formed on the first light-emitting functional layer, wherein the second light-emitting functional layer is located at a second portion of the pixel opening, and the second light-emitting functional layer includes an electron transport layer.

8. The method for manufacturing a display panel according to claim 1, wherein: The step of forming a light-emitting functional layer on a side of the anode layer away from the substrate comprises: Using an inkjet printing process to drop a first ink on a side of the anode layer away from the substrate, the first ink comprising an organic solvent and a material of the light-emitting functional layer; Performing a drying film-forming treatment on the side of the anode layer away from the substrate after the inkjet printing process to remove the organic solvent, so as to form a light-emitting functional layer on the side of the anode layer away from the substrate; The step of forming a cathode layer on a side of the light-emitting functional layer away from the anode layer comprises: A cathode layer is formed on a side of the light-emitting functional layer away from the anode layer by using an evaporation process.

9. The method for manufacturing a display panel according to any one of claims 1 to 8, characterized in that: The step of forming a pixel definition layer on the substrate, wherein a surface of the sacrificial layer facing away from the anode layer is exposed through the pixel definition layer comprises: Coating a photoresist material on the substrate to form a photoresist material layer, wherein the photoresist material layer covers the substrate and the sacrificial layer, and the distance between the surface of the sacrificial layer away from the anode layer and the substrate is greater than the thickness of the portion of the photoresist material layer covering the substrate; The photoresist material layer is exposed and developed to form the pixel definition layer, wherein the pixel definition layer surrounds the pixel opening on the periphery of the sacrificial layer, and the surface of the sacrificial layer away from the anode layer is exposed through the pixel definition layer.

10. A display panel, characterized in that: include: substrate; an anode layer, disposed on one side of the substrate; A pixel definition layer is disposed on one side of the substrate and covers the anode layer. The pixel definition layer is provided with a pixel opening, the pixel opening exposes a portion of the anode layer, and an angle between a side wall of the pixel opening and a plane where the portion of the anode layer exposed to the pixel opening is located is an acute angle; a light-emitting functional layer, arranged on a side of the anode layer away from the substrate, the light-emitting functional layer comprising a central portion and an edge portion arranged around the central portion, the thickness of the central portion being smaller than the thickness of the edge portion; as well as A cathode layer, disposed on a side of the light-emitting functional layer away from the anode layer; In a plan view of the display panel, the edge portion overlaps a side wall of the pixel opening.

11. The display panel according to claim 10, wherein: The angle between the side wall of the pixel opening and the plane where the portion of the anode layer exposed to the pixel opening is located is in a range of 30 degrees to 70 degrees.

12. The display panel according to claim 10, wherein: The pixel opening comprises a first portion and a second portion which are connected to each other, wherein the first portion of the pixel opening is disposed on a side of the anode layer away from the substrate and exposes a portion of the anode layer, and the second portion of the pixel opening is disposed on a side of the first portion of the pixel opening away from the anode layer; In a plan view of the display panel, a side wall of the first portion of the pixel opening is located outside a side wall of the second portion of the pixel opening, and the edge portion overlaps with the side wall of the first portion of the pixel opening.

13. A display device, characterized in that: Comprising the display panel as claimed in any one of claims 10 to 12.

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