Light emitting device with reduced area center electrode

Abstract

A semiconductor LED includes a p-doped layer, an n-doped layer, and an active layer, and has an anode electrical contact and a cathode electrical contact. The active layer extends to the side surface of the LED; the anode contact is on the central region of the p-doped layer and leaves a peripheral region without being electrically coupled directly to the anode contact, thereby reducing non-radiative recombination at the side surface. The LED may include a front reflector having a central opening aligned with the anode contact. The LED may include a front reflector, a side reflector, and a back reflector to form an optical cavity enclosing the n-doped and p-doped semiconductor layers and the active layer.

Description

[0001] Priority claim

[0002] This application claims priority to U.S. Provisional Application No. 63 / 357,290, filed on June 30, 2022 in the name of Antonio Lopez-Julia, entitled “Light-emitting device with reduced-area central electrode,” which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention generally relates to light emitting diodes and phosphor converted light emitting diodes. Background Art

[0004] Semiconductor light emitting diodes and laser diodes (collectively referred to herein as "LEDs") are among the most efficient light sources currently available. The emission spectrum of an LED typically exhibits a single narrow peak at a wavelength determined by the structure of the device and the composition of the semiconductor material from which it is constructed. By appropriately selecting the device structure and material system, an LED can be designed to operate at ultraviolet, visible, or infrared wavelengths.

[0005] The LED may be combined with one or more wavelength converting materials (generally referred to herein as "phosphors") that absorb light emitted by the LED and in response emit light of a longer wavelength. For such phosphor-converted LEDs ("pcLEDs"), the fraction of light emitted by the LED that is absorbed by the phosphor depends on the amount of phosphor material in the optical path of the light emitted by the LED, for example, on the concentration of the phosphor material in a phosphor layer disposed on or around the LED and the thickness of the layer.

[0006] Phosphor-converted LEDs can be designed so that all light emitted by the LED is absorbed by one or more phosphors, in which case the emission from the pcLED is entirely from the phosphors. In this case, for example, the phosphors can be selected to emit light in a narrow spectral region that is not efficiently generated directly by the LED.

[0007] Alternatively, the pcLED can be designed so that only a portion of the light emitted by the LED is absorbed by the phosphor, in which case the emission from the pcLED is a mixture of the light emitted by the LED and the light emitted by the phosphor. By appropriately selecting the LED, phosphor, and phosphor composition, such a pcLED can be designed to emit, for example, white light having a desired color temperature and desired color rendering characteristics.

[0008] Multiple LEDs or pcLEDs can be formed together on a single substrate to form an array. Such arrays can be used to form active lighting displays, such as those employed in, for example, smartphones and smart watches, computer or video displays, signage, or visualization systems (such as augmented reality displays or virtual reality displays); or to form adaptive lighting sources, such as those employed in, for example, motor vehicle headlights, street lighting, camera flash sources, or flashlights (i.e., flashlights). Arrays with one or a few or many individual devices per millimeter (e.g., device pitch or spacing of about one millimeter, a few hundred microns, or less than 100 microns, and separations of less than 100 microns or only tens of microns or less between adjacent devices) are generally referred to as miniLED arrays or microLED arrays (alternatively, μLED arrays). Such miniLED arrays or microLED arrays may also include a phosphor converter as described above in many instances; such arrays may be referred to as pc-miniLED arrays or pc-microLED arrays. Summary of the invention

[0009] The light emitting element of the present invention comprises a semiconductor light emitting diode (LED), an anode electrical contact and a cathode electrical contact. The LED comprises a p-doped semiconductor layer, an n-doped semiconductor layer, and an active light emitting layer between the p-doped layer and the n-doped layer, and emits light at a nominal emission vacuum wavelength λ0, which is generated by the radiative recombination of charge carriers at the active layer. The LED has (i) a light exit surface of the n-doped layer opposite to the active layer, (ii) an anode contact surface of the p-doped layer opposite to the active layer, and (iii) a side surface that laterally limits the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer. The active layer extends to the side surface. The cathode electrical contact is electrically coupled to the n-doped layer. The anode electrical contact is electrically coupled to the p-doped layer only in a central region of the anode contact surface, and the central region of the anode contact surface is surrounded by a peripheral portion of the anode contact surface, and the peripheral portion lacks direct electrical coupling with the anode electrical contact.

[0010] In some examples, the light emitting element may include a reflective layer or a scattering layer on a peripheral portion of the light exit surface, at least a portion of the anode contact surface, or at least a portion of the side surface; the reflective layer or the scattering layer on the light exit surface may have a central opening therethrough. In some examples, the reflective layer or the scattering layer may form an optical cavity that at least partially encloses the n-doped semiconductor layer and the p-doped semiconductor layer and the active layer. In some examples, at least a portion of the central opening may be positioned opposite to at least a portion of the central region of the anode contact surface.

[0011] Objects and advantages associated with LEDs, pcLEDs, miniLED arrays, pc-miniLED arrays, microLED arrays, and pc-microLED arrays may become apparent when referring to the examples illustrated in the accompanying drawings and disclosed in the following written description or appended claims.

[0012] This Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 A schematic cross-sectional view of an example pcLED is shown.

[0014] Figure 2A and Figure 2B Schematic cross-sectional and top views of an example array of pcLEDs are shown, respectively.

[0015] Figure 3A A schematic cross-sectional view of an example array of pcLEDs arranged relative to a waveguide and projection lens is shown. Figure 3B Shown with Figure 3A A similar arrangement to that of , but without the waveguide.

[0016] Figure 4A A schematic top view of an example miniLED or microLED array and an enlarged portion of a 3×3 LED of the array are shown. Figure 4B is a side cross-sectional schematic diagram of an example of a close packed array of multicolor phosphor-converted LEDs on a monolithic die and substrate.

[0017] Figure 5A is a schematic top view of a portion of an example LED display in which each display pixel is a red, green, or blue phosphor-converted LED pixel. Figure 5B is a schematic top view of a portion of an example LED display in which each display pixel includes multiple phosphor-converted LED pixels (red, green, and blue) integrated onto a single die that is bonded to a control circuit backplane.

[0018] Fig. 6A shows a schematic top view of an example electronic board on which a pcLED array may be mounted, and Figure 6B Similarly, the installation Fig. 6A An example pcLED array on an electronics board.

[0019] Figure 7is a schematic cross-sectional view of an example light emitting element.

[0020] Figure 8 is a schematic cross-sectional view of an example light emitting element.

[0021] Fig.9A is a schematic top view of a portion of an array of example light emitting elements. Fig. 9B yes Fig.9A Schematic cross-sectional view of two adjacent light-emitting elements of an array.

[0022] Fig.10 is a schematic cross-sectional view of an example light emitting element.

[0023] Fig.11 is a schematic cross-sectional view of an example light emitting element.

[0024] Fig. 12A is a schematic cross-sectional view of an example light emitting element. Fig. 12B is a schematic cross-sectional view of an example light emitting element.

[0025] Fig.13 is a schematic cross-sectional view of an example light emitting element.

[0026] Fig.14 is a schematic cross-sectional view of an example light emitting element.

[0027] Fig.15 is a schematic cross-sectional view of an example light emitting element.

[0028] Fig.16 is a schematic cross-sectional view of an example light emitting element.

[0029] Fig.17 is a schematic cross-sectional view of an example light emitting element.

[0030] Fig.18 is a schematic cross-sectional view of an example light emitting element.

[0031] Fig.19 is a schematic cross-sectional view of an example light emitting element.

[0032] Fig. 20 is a schematic cross-sectional view of a portion of an array of example light emitting elements connected to a control circuit.

[0033] The depicted examples are shown schematically only; all features may not be shown in full detail or in proper scale; certain features or structures may be exaggerated or reduced relative to other features or structures, or omitted entirely, for the sake of clarity; the drawings should not be considered to be to scale unless explicitly indicated to be to scale. For example, the vertical dimensions or layer thicknesses of individual LEDs may be exaggerated relative to their lateral extent or relative to substrate or phosphor thickness. The examples shown should not be construed to limit the scope of the present disclosure or the appended claims. DETAILED DESCRIPTION

[0034] The following detailed description should be read with reference to the accompanying drawings, wherein the same reference numerals refer to similar elements throughout the different figures. The drawings, which are not necessarily to scale, depict selective examples and are not intended to limit the scope of the subject matter of the present invention. The detailed description illustrates the principles of the subject matter of the present invention by way of example, not by way of limitation. For the purpose of simplicity and clarity, the specific embodiments of known devices, circuits and methods may be omitted so as not to obscure the description of the subject matter of the present invention with unnecessary details.

[0035] Figure 1 An example of an individual pcLED 100 is shown, which includes a semiconductor diode structure 102 (collectively referred to herein as an "LED" or "semiconductor LED") disposed on a substrate 104, and a wavelength conversion structure (e.g., a phosphor layer) 106 disposed on the semiconductor LED. The semiconductor diode structure 102 generally includes an active region disposed between an n-type layer and a p-type layer. Application of a suitable forward bias across the diode structure 102 results in emission of light from the active region. The wavelength of the emitted light is determined by the composition and structure of the active region.

[0036] The LED may be, for example, a Group III nitride LED that emits blue, violet, or ultraviolet light. LEDs formed from any other suitable material system and emitting any other suitable wavelength of light may also be used. Other suitable material systems may include, for example, Group III phosphide materials, Group III arsenide materials, other binary, ternary, or quaternary alloys of gallium, aluminum, indium, nitrogen, phosphorus, or arsenic, or Group II-VI materials.

[0037] Any suitable phosphor material may be used for or incorporated into the wavelength conversion structure 106 depending on the desired optical output from the pcLED.

[0038] Figure 2A and Figure 2BA cross-sectional view and a top view, respectively, of an array 200 of pcLEDs 100 disposed on a substrate 204, each pcLED 100 including a phosphor pixel 106. Such an array may include any suitable number of pcLEDs arranged in any suitable manner. In the illustrated example, the array is depicted as being monolithically formed on a shared substrate, but alternatively, the pcLED array may be formed of separate individual pcLEDs (e.g., singulated devices assembled onto an array substrate). Individual phosphor pixels 106 are shown in the illustrated example, but alternatively, adjacent layers of phosphor material may be provided across multiple LEDs 102. In some instances, the array 200 may include light barriers (e.g., reflective, scattering, and / or absorbing) between adjacent LEDs 102, phosphor pixels 106, or both. The substrate 204 may optionally include electrical traces or interconnects, or CMOS or other circuitry for driving the LEDs, and may be formed of any suitable material.

[0039] Optionally, each pcLED 100 can include a lens or other optical element, or be arranged in combination with a lens or other optical element, which is positioned adjacent to or disposed on the phosphor layer. Such an optical element (not shown in the figure) can be referred to as a "primary optical element" and can have any suitable type of arrangement (e.g., a conventional refractive or diffractive optical element, or a so-called nanostructured optical element (such as the nanostructured optical elements disclosed in, for example, U.S. Patent No. 11327283, U.S. Publication No. 2020 / 0343416, U.S. Publication No. 2020 / 0335661, U.S. Publication No. 2021 / 0184081, U.S. Publication No. 2022 / 0146079, or U.S. Non-Provisional Application No. 17 / 825143 filed on May 26, 2022, each of which is incorporated by reference in its entirety)). In addition, as Figure 3A-3B As shown in , the pcLED array 200 (e.g., mounted on an electronic board) can be arranged to be combined with secondary optical elements (such as waveguides, lenses, or both) for use in an intended application (for the entire array, for a subset thereof, or for individual pixels; for use in an intended application of any suitable type or arrangement, such as conventional refractive or diffractive optical elements, or so-called nanostructured optical elements (including any of the nanostructured optical elements listed above)). Figure 3A, light emitted by each pcLED 100 of array 200 is collected by a corresponding waveguide 192 and directed to a projection lens 294. For example, projection lens 294 may be a Fresnel lens. For example, this arrangement may be suitable for use in automotive headlights or other adaptive lighting sources. Each pixel may include other primary or secondary optical elements of any suitable type or arrangement as needed or desired. Figure 3B 2, light emitted by the pcLEDs of array 200 is collected directly by projection lens 294 without the use of an intervening waveguide. This arrangement may be particularly suitable when the pcLEDs can be spaced sufficiently close to each other, and may also be used in automotive headlights as well as camera flash applications or other illumination sources. For example, miniLED or microLED display applications may use Figure 3A-3B An optical arrangement similar to the optical arrangement depicted in . In general, any suitable arrangement of optical elements (primary, secondary, or both) can be used in combination with the pcLEDs described herein, depending on the desired application.

[0040] although Figure 2A and Figure 2B A 3×3 array of nine pcLEDs is shown, but such an array may include, for example, 10 1 , 10 2 , 10 3 , 10 4 or more LEDs, such as Figure 4A Schematically shown in . Each LED 100 (i.e., pixel) may have a width w1 (e.g., side length) of, for example, less than or equal to 1 millimeter (mm), less than or equal to 500 microns, less than or equal to 100 microns, or less than or equal to 50 microns in the plane of the array 200. The LEDs 100 in the array 200 may be spaced apart from each other by streets, lanes, or grooves 230 having a width w2 of, for example, hundreds of microns, less than or equal to 100 microns, less than or equal to 50 microns, less than or equal to 20 microns, less than or equal to 10 microns, or less than or equal to 5 microns in the plane of the array 200. The pixel pitch or spacing D1 is the sum of w1 and w2. Although the illustrated example shows rectangular pixels arranged in a symmetrical matrix, the pixels and arrays may have any suitable shape or arrangement, whether symmetrical or asymmetrical. Multiple separate LED arrays may be combined in any suitable arrangement in any applicable format to form a larger combined array or display.

[0041] LEDs with a dimension w1 (e.g., side length) in the array plane less than or equal to about 0.10 mm are generally referred to as microLEDs, and an array of such microLEDs may be referred to as a microLED array. LEDs with a dimension w1 (e.g., side length) in the array plane between about 0.10 mm and about 1.0 mm are generally referred to as miniLEDs, and an array of such miniLEDs may be referred to as a miniLED array.

[0042] Arrays of LEDs, miniLEDs or microLEDs, or portions of such arrays, may be formed as segmented monolithic structures in which individual LED pixels are electrically isolated from one another, for example by trenches and / or insulating material. Figure 4B 2 is a schematic cross-sectional view of a close-packed array 200 of multicolor phosphor-converted LEDs 100 on a monolithic die and substrate 204. The side view shows a GaN LED 102 attached to a substrate 204 via a metal interconnect 239 (e.g., a gold-gold interconnect or solder attached to a copper micro-pillar) and a metal interconnect 238. The phosphor pixels 106 are located on or above the corresponding GaN LED pixels 102. Either the semiconductor LED pixel 102 or the phosphor pixel 106 (typically both) may be coated on its side with a reflector or diffuse scattering layer to form an optical isolation barrier 220 (which may also serve as an electrical isolation barrier in some instances). In this example, each phosphor pixel 106 is one of three different colors, e.g., a red phosphor pixel 106R, a green phosphor pixel 106G, and a blue phosphor pixel 106B (still generally or collectively referred to as phosphor pixels 106). This arrangement may enable the LED array 200 to be used as a color display.

[0043] Each LED (pixel) in the LED array can be individually addressable, can be addressable as part of a group or subset of pixels in the array, or can be non-addressable. Therefore, for any application that requires or benefits from fine-grained intensity, spatial and temporal control of light distribution, the luminescent pixel array is useful. These applications may include, but are not limited to, precise special patterning of the emitted light from a pixel block or individual pixels, including forming images as a display device in some instances. Depending on the application, the emitted light can be spectrally distinct, adaptive over time, and / or environmentally responsive. The luminescent pixel array can provide pre-programmed light distribution with various intensity, space, or time patterns. The emitted light can be based at least in part on received sensor data and can be used for optical wireless communication. The associated electronic devices and optical devices can be distinct at the pixel, pixel block, or device level.

[0044] Figure 5A and Figure 5Bis an example of an LED array 200 employed in a display application or visualization system (e.g., an augmented reality system or a virtual reality system), wherein the LED display includes a large number of display pixels. Figure 5A ), each display pixel includes a single semiconductor LED pixel 102 and a corresponding single color (red, green or blue) phosphor pixel 106R, 106G or 106B. Each display pixel provides only one of the three colors. Figure 5B ), each display pixel includes a plurality of semiconductor LED pixels 102 and a plurality of corresponding phosphor pixels 106 of a plurality of colors. In the example shown, each display pixel includes a 3×3 array of semiconductor pixels 102; three of those LED pixels have red phosphor pixels 106R, three have green phosphor pixels 106G, and three have blue phosphor pixels 106B. Thus, each display pixel can produce any desired color combination. In the example shown, the spatial arrangement of the phosphor pixels 106 of different colors differs between display pixels; in some examples (not shown), each display pixel can have the same arrangement of phosphor pixels 106 of different colors.

[0045] like Fig. 6A and Figure 6B As shown in , the pcLED array 200 can be mounted on an electronic board 300 that includes a power and control module 302, a sensor module 304, and an LED attachment area 306. The power and control module 302 can receive power and control signals from an external source and signals from the sensor module 304, and the power and control module 302 controls the operation of the LEDs based on these signals. The sensor module 304 can receive signals from any suitable sensor (e.g., from a temperature or light sensor). Alternatively, the pcLED array 200 can be mounted on a board (not shown) separate from the power and control module and the sensor module.

[0046] For purposes of the present disclosure and the appended claims, a "forward," "rearward," "upward," "downward," or "vertical" direction is generally perpendicular to the layers of the diode structure 102 and the wavelength conversion layer 106 (if present); a "lateral" or "horizontal" direction is generally parallel to these layers. Designations of directions or surfaces—such as, for example, "front," "forward," "top," or "upper" and "rear," "backward," "rear," "back," "bottom," or "lower"—are generally arbitrary but are used consistently for descriptive convenience only. For purposes of the present disclosure and the appended claims, any arrangement of a layer, surface, substrate, diode structure, or other structure "on," "over," or "against" another such structure shall encompass arrangements with direct contact between the two structures, as well as arrangements including some intervening structures therebetween. Conversely, any arrangement of a layer, surface, substrate, diode structure, or other structure "directly on," "directly over," or "directly against" another such structure shall only encompass arrangements with direct contact between the two structures. For purposes of the present disclosure and the appended claims, a layer, structure, or material described as "transparent" or "substantially transparent" should exhibit a sufficiently high level of optical transmission at the nominal emission vacuum wavelength λ0, or a sufficiently low level of optical loss (due to absorption, scattering, or other loss mechanisms) so that the light-emitting device can function within operationally acceptable parameters (e.g., output power or brightness, conversion or extraction efficiency, or other quality factors (including the quality factors described below)).

[0047] Semiconductor LEDs generate light when charge carriers recombine in the active layer and emit photons. Competing with this desired radiative carrier recombination process are various undesirable non-radiative carrier recombination processes. Non-radiatively recombined carriers do not generate light and therefore reduce the overall current-to-light conversion efficiency of the LED. Non-radiative recombination is more likely to occur at crystal defect sites or surface states in the semiconductor material of the LED, and is particularly likely to occur at the side surfaces of the device where the semiconductor material has been etched or cut or otherwise altered (and therefore has a relatively high density of defect sites or surface states). As the size of the LED decreases (for example, as smaller individual LEDs are used to produce miniLED or microLED arrays), the ratio of the device perimeter to the device area increases, thereby increasing the fraction of non-radiatively combined carriers. It would be desirable to provide a light-emitting element that is arranged so as to at least reduce the likelihood of non-radiative recombination at the side surfaces of the light-emitting element.

[0048] (For example, in Figures 7 to 19) The light emitting element 500 of the present invention includes a semiconductor light emitting diode (LED) 502 and an anode electrical contact and a cathode electrical contact. The semiconductor LED 502 includes a p-doped semiconductor layer 502b, an n-doped semiconductor layer 502c, and an active light emitting layer 502a between the p-doped layer and the n-doped layer 502b / 502c. The LED has (i) a light emitting surface 511 of the n-doped layer 502c opposite to the active layer 502a, (ii) an anode contact surface 512 of the p-doped layer 502b opposite to the active layer 502a, and (iii) one or more side surfaces 513 that laterally limit at least a portion of the p-doped layer 502b, the active layer 502a, and the n-doped layer 502c. The active layer 502a extends to the side surface 513. In some examples, the side surface 513 laterally limits the entire n-doped layer 502c.

[0049] In some examples, the LED, including any one or more of its constituent layers 502a / 502b / 502c, may include one or more doped or undoped III-V, II-VI, or IV semiconductor materials or alloys or mixtures thereof. In some examples, the active layer 502a may include one or more pn junctions, one or more quantum wells, one or more multiple quantum wells, or one or more quantum dots. In some examples, the nominal emission vacuum wavelength λ0 may be greater than 0.20 μm, greater than 0.4 μm, greater than 0.8 μm, less than 10 μm, less than 2.5 μm, or less than 1.0 μm. In some examples (e.g., Figure 8 or Fig.11In some examples), the total non-zero thickness of the layers 502a / 502b / 502c of the LED can be less than 20μm, less than 10μm, less than 5μm, less than 3μm, less than 2μm, less than 1.5μm, or less than 1.0μm. In some examples, the non-zero thickness of the p-doped layer can be less than 2μm, less than 1.0μm, less than 0.8μm, less than 0.5μm, less than 0.3μm, less than 0.2μm, or less than 0.10μm. In some examples, the layers of the LED support up to 15, 10, 8, 5, or 3 laterally propagating optical modes (for purposes of this disclosure, those propagating optical modes supported by the semiconductor layer structure of the LED that have qualitatively similar vertical intensity distributions (e.g., the same number of peaks and nodes), regardless of the lateral propagation direction or lateral intensity distribution, shall be collectively referred to as only one mode among the supported optical modes). In some examples, the non-zero thickness of the p-doped layer can be selected so as to cause the angular distribution of light emitted within the LED to be close to a specified angular distribution; see, for example, U.S. Non-Provisional Application No. 17 / 701,319 filed on March 22, 2022, or U.S. Provisional Application Nos. 63 / 232,960, 63 / 232,965, or 63 / 233,043 filed on August 13, 2021, each of which is incorporated by reference in its entirety.

[0050] The anode electrical contact is located on the anode contact surface 512 and is electrically coupled to the p-doped layer 502b; the cathode electrical contact is electrically coupled to the n-doped layer 502c. The anode electrical contact is electrically coupled to the p-doped layer 502b on the central region 522 of the anode contact surface 512, leaving the peripheral portion of the anode contact surface 512 not directly electrically coupled to the anode electrical contact. In some examples, the central region 522 of the anode contact surface 512 is surrounded by the peripheral portion of the anode contact surface 512 (i.e., completely surrounded by the anode contact surface 512), which lacks direct electrical coupling with the anode electrical contact. In this arrangement, no current or only negligible current flows into / out of the peripheral region of the active layer 502a through the p-doped layer 502b. The current flows between the anode electrical contact and the active layer 502a (through the p-doped layer 502b) in their respective central regions, thereby avoiding the side surface 513 and its defect sites or surface states that may mediate non-radiative carrier recombination. Lateral diffusion of charge carriers within the active layer 502a may result in some light being emitted from peripheral regions of the active layer 502a.

[0051] In some instances, a suitably large distance between the side surface 513 and the periphery of the central region 522 of the anode contact surface 512 can be selected based on typical carrier radiation lifetimes and based on typical carrier lateral diffusion rates. A distance can be selected so that most of the carriers will have already radiatively recombined within the time required for most of those carriers to have diffused through the selected distance. In some examples, radiative recombination can occur when the carriers have diffused a distance of about 1 to 5 μm. In some examples, a suitably large distance can be selected empirically. A series of test devices can be made with different distances between the side surface 513 and the periphery of the central region 522 of the anode contact surface 512. The total current-to-light conversion efficiency can be measured and can be expected to reach a maximum value at a non-zero distance or within a distance range between the side surface 513 and the central region of the anode contact surface 512. The conversion efficiency would be expected to increase with increasing separation, and then eventually decrease as the separation becomes so large that peripheral regions of active layer 502a begin to emit less or no light, from its value when the anode electrical contact extends all the way to side surface 513. In some examples, the separation between the lateral edge of central region 522 of anode contact surface 512 and side surface 513 can be greater than 1.0 μm, 2 μm, 5 μm, 10 μm, 20 μm, or 50 μm.

[0052] In some examples, the light emitting element 500 includes a reflective layer or a scattering layer on the peripheral portion of the light exit surface 511, so that there is a central opening 521 through the reflective layer or the scattering layer. In some examples, the separation between the lateral edge and the side surface of the central opening can be greater than 1.0 μm, 2 μm, 5 μm, 10 μm, 20 μm or 50 μm. Most or all of the light exiting through the light exit surface 511 passes through the central opening 521. At least a portion of the central opening 521 is positioned opposite to at least a portion of the central region 522 of the anode contact surface 512, that is, the contour of the central opening 521 projected downward onto the anode contact surface 512 overlaps at least partially with the central region 522. This arrangement can be effectively adopted, for example, in an example with a cathode electrical contact that blocks light from being transmitted through the peripheral portion of the light exit surface 511, and can enhance a fraction of the light emitted by the active layer 502a, which is generated by the current flowing through the anode electrical contact on the central region 522, escaping through the light exit surface 511. In some examples, the entire central opening 521 can be positioned opposite at least a portion of a central region 522 of anode contact surface 512; in some examples, the entire central region 522 of anode contact surface 512 can be positioned opposite at least a portion of central opening 521. In some examples, central opening 521 can be concentrically positioned opposite the central region of the anode contact surface (e.g., their respective centroids can be aligned along a vertical line); in some of these examples, central opening 521 and central region 522 of anode contact surface 512 can be substantially the same size and shape.

[0053] In some examples, the light emitting element 500 includes a reflective or scattering layer on a peripheral portion of the light exit surface 511, at least a portion of the anode contact surface 512, or at least a portion of the side surface 513; some examples may include all of these. The reflective or scattering layer on the light exit surface 511 has a central opening 521, which is arranged in any of the above-described ways. The reflective or scattering layers on the surfaces 511, 512, and 513 can form an optical cavity that at least partially encloses the n-doped layer, the p-doped layer, and the active layer 502c / 502b / 502a. In some examples, the optical cavity can be arranged so that the emitted light leaves the element 500 only through the central opening 521. In some examples, the optical cavity can be arranged as a resonant cavity that supports one or more resonant optical modes. The element 500 can be arranged so that the nodes or antinodes of one or more resonant optical modes are appropriately positioned to, for example, increase the Purcell factor of the emission of the active layer 502a, enhance the directionality of the emission of the active layer 502a or the transmission through the light exit surface 511, or reduce optical losses at the side surface 513 or the anode contact surface 512.

[0054] In some examples, the light emitting element 500 includes a side surface 513 that is substantially flat and substantially perpendicular to the light exit surface 511 and the anode contact surface 512. In some of these examples, the side surface 513 can be flat in two dimensions, for example, as a side facet of a square or rectangular element 500; in some of these examples, the side surface 513 can be flat only in the vertical dimension, for example, as a side surface of a cylindrical element 500. In some examples, the side surface 513 can form an obtuse internal angle with the light exit surface 511 (for example, as in Fig. 12A In some examples, the side surface 513 may form an obtuse internal angle with the anode contact surface 512 (e.g., as in Fig. 12B or in the various examples disclosed in U.S. Provisional Application No. 63 / 289,607, filed on December 14, 2021, which is incorporated by reference in its entirety). Fig. 12A In the example of , the side surface 513 can "focus" the emitted light toward the central opening 521. Fig. 12B In the example of FIG. 5 , the side surface 513 can collect the laterally propagating light and redirect it toward the light exit surface 511 .

[0055] In some examples, light emitting element 500 can include an electrically insulating back dielectric layer 540 on a peripheral portion of anode contact surface 512 that lacks direct electrical coupling to the anode electrical contact. Back dielectric layer 540 can include one or more of the following materials: doped or undoped silicon oxide, silicon nitride, or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides, or oxynitrides; one or more doped or undoped metal oxides, nitrides, or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers. In some examples, back dielectric layer 540 can include only a single layer of a single dielectric material; in other examples, back dielectric layer 540 can include multiple layers or multiple materials.

[0056] In some examples (e.g., as in Figure 7-12B or Fig.16), the anode electrical contact may include a metal layer 542 in direct contact with the central region 522 of the anode contact surface 512. The metal layer 542 may include one or more of aluminum, silver, gold, or other metals or metal alloys. The metal layer 542 may be electrically coupled to the anode bonding layer 536, which in turn may be electrically coupled to, for example, an electrical trace or other circuit arranged to transmit current to / from the p-doped layer 502b of the light emitting element 500 through the central region 522 of the anode contact surface 512. The anode bonding layer 536 is electrically isolated from the active layer and the n-doped layer 502a / 502c, meaning that there is no direct electrical coupling between the anode bonding layer 536 and the active layer and the n-doped layer 502a / 502c; however, there is indirect electrical coupling through the p-doped layer 502b. In some examples (not shown), the anode electrical contact may be a portion of the conductive anode bonding layer 536 that is in direct electrical contact with the central region 522 of the anode contact surface 512. Anodic bonding layer 536 may include one or more of aluminum, silver, gold, or other metals or metal alloys.

[0057] In some examples (e.g., as in Figure 13-Figure 15 or Figure 17-Figure 19 ), the anode electrical contact may include a transparent conductive oxide (TCO) layer 544 in direct contact with the central region 522 of the anode contact surface 512. The TCO layer may include one or more of indium tin oxide, indium zinc oxide, one or more other transparent conductive oxides, or combinations or mixtures thereof. In such examples, the back dielectric layer 540 may cover the TCO layer 544 opposite the anode contact surface 512 (e.g., as in Figure 13-Figure 15 or Figure 17-Figure 19 In such an example, the light emitting element 500 may include at least one external, local, conductive via 545 electrically coupled to the TCO layer 544 and passing through the back dielectric layer 540 (for better clarity, in Fig.18 544 to reduce clutter). In some examples, vias 545 electrically couple TCO layer 544 to anode bonding layer 536. In some examples (e.g., as in Fig.14 , Fig.15 or Figure 17-Figure 19), the light emitting element 500 may include a back reflector 548 on the back dielectric layer 540 opposite the TCO layer 544 and the anode contact surface 512. In some examples, the back reflector 548 may include one or more of a metal layer, a dielectric multilayer reflector, or a distributed Bragg reflector, and may include one or more of the following materials: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI, or IV semiconductors; doped or undoped silicon oxide, silicon nitride, or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides, or oxynitrides; one or more doped or undoped metal oxides, nitrides, or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers. If the back reflector 548 is conductive, it can be electrically coupled to the via 545 and the anode bonding layer 536; in some examples, the anode bonding layer 536 can act as the back reflector 548. If the back reflector 548 is not conductive, the via 545 can pass through it.

[0058] In some examples (e.g., as in Fig.13 , Fig.15 , Fig.18 and Fig.19 ), the back dielectric layer 540 may include at least a central portion opposite to the central region 522 of the anode contact surface 512, the central portion protruding away from the anode contact surface 512. The protruding portion of the back dielectric layer 540 may be arranged so as to redirect a portion of the light propagating from the active layer 502a through the anode contact surface 512 to propagate back toward the light exit surface 511 through the anode contact surface 512. The protruding portion of the back dielectric layer 540 may thus act as a light collector for the light emitting element 500. In some examples, the protruding central portion of the back dielectric layer 540 may have a tapered shape that decreases in lateral extent as the distance from the anode contact surface 512 increases. Examples of such structures are disclosed, for example, in U.S. Provisional Application No. 63 / 289,607 incorporated above.

[0059] In some examples (e.g., as in Fig.14 , Fig.15 , Fig.18 or Fig.19), the light emitting element 500 may include a back collection of multiple nanostructured optical elements 547 characterized by at least one element size relative to a nominal emission vacuum wavelength λ0 and characterized by at least one element shape (e.g., cylindrical, truncated cone, truncated pyramid, etc.). The nanostructured optical elements 547 may be located on or within the back dielectric layer 540, or at the anode contact surface 512, and may be arranged in an element array characterized by at least one element spacing relative to the nominal emission vacuum wavelength λ0. The element size, shape, and spacing of the back collection may be selected to result in one or more of the following: (1) non-specular reflection redirection of at least a portion of light propagating within the dielectric layer at the nominal emission vacuum wavelength λ0 to propagate toward the light exit surface, (2) non-specular reflection or non-refractive transmission redirection of at least a portion of light incident on the anode contact surface at the nominal emission vacuum wavelength λ0 to propagate toward the light exit surface, (3) an increase in the Purcell factor for light emitted by the active layer, or (4) an enhancement in the directionality of light emitted by the active layer. Examples of such nanostructured layers are disclosed in various references above in conjunction with the discussion of primary and secondary optical elements for pcLEDs 100 of array 200 .

[0060] In some examples, the back-grouped nanostructured elements 547 may include a plurality of appropriately sized and shaped protrusions, holes, depressions, inclusions, or structures. In some examples, the back-grouped nanostructured elements 547 may include a single nanoantenna array or a dual nanoantenna array or a meta-atomic or meta-molecular array (e.g., as in Fig.14 , Fig.18 and Fig.19 ), a partial photonic bandgap structure, or a photonic crystal (e.g., as shown schematically in the example of Fig.15 In some examples, the non-zero size or spacing of the nanostructured elements 547 of the back set or the non-zero spacing between the active layer 502a and the nanostructured elements 547 of the back set can be less than λ0 / n P , less than λ0 / 2n P , less than λ0 / 4n P , or less than λ0 / 10n P , where n P is the refractive index of the p-doped layer. In some examples, the non-zero size or spacing of the nanostructured elements 547 of the back set can be less than λ0 / n B , less than λ0 / 2n B , less than λ0 / 4n B or less than λ0 / 10n B , where n Bis the refractive index of the back dielectric layer. In some examples, the back-assembled nanostructured elements 547 may include one or more of the following materials: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI, or IV semiconductors; doped or undoped silicon oxide, silicon nitride, or silicon oxynitride; one or more doped or undoped metal oxides, nitrides, or oxynitrides; one or more doped or undoped semiconductor oxides, nitrides, or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0061] In some examples (e.g., as in Fig. 9B , Fig.10 , Fig.11 , Fig. 12A / Fig. 12B , Fig.16 , Fig.17 or Fig.19 ), the light emitting element 500 may include an electrically insulating lateral dielectric layer 550 on at least a portion of the side surface 513; in some examples, the lateral dielectric layer 550 may be adjacent to the back dielectric layer 540. The lateral dielectric layer 550 may surround the entire p-doped layer 502b, the entire active layer 502a, and at least a portion of the n-doped layer 502c; in some of these examples, the lateral dielectric layer 550 may surround the entire n-doped layer 502c. The lateral dielectric layer 550 may include one or more materials selected from the group consisting of: doped or undoped silicon oxide, silicon nitride, or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides, or oxynitrides; one or more doped or undoped metal oxides, nitrides, or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers. In some examples, the lateral dielectric layer 550 may include only a single layer of a single dielectric material; in other examples, the lateral dielectric layer 550 may include multiple layers or materials.

[0062] In some examples (e.g., as in Fig. 9B , Fig.10 , Fig.11 , Fig. 12A / Fig. 12B , Fig.16 , Fig.17 or Fig.19 In any of the examples, the light emitting element 500 may include a conductive cathode bonding layer 546 electrically coupled to the cathode electrical contact and electrically isolated from the active layer and the p-doped layer 502a / 502b. In some of these examples (e.g., as in Fig. 9B , Fig. 12A / Fig. 12B , Fig.16 , Fig.17 or Fig.19 ), the lateral dielectric layer 550 electrically isolates the active layer and the p-doped layer 502a / 502b from the cathode bonding layer 546, and the cathode bonding layer 546 is electrically coupled to the n-doped layer 502c by direct contact with at least a sidewall portion or a peripheral portion thereof so as to serve as a cathode electrical contact. In some of these examples (e.g., as in Fig.10 or Fig.11 ), the lateral dielectric layer 550 also electrically isolates the n-doped layer 502c from the cathode bonding layer 546. In some examples, the cathode bonding layer 546 can include one or more of aluminum, silver, gold, or other metals or metal alloys. In some examples, at least a portion of the cathode bonding layer 546 can be arranged to act as a lateral reflector at the side surface 513.

[0063] In some examples, the lateral dielectric layer 550 can include a lateral reflector between the side surface 513 and the cathode bonding layer 546. In some of these examples, the lateral reflector can include a dielectric multilayer reflector or a distributed Bragg reflector and can include one or more of the following materials: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI, or IV semiconductors; doped or undoped silicon oxide, silicon nitride, or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides, or oxynitrides; one or more doped or undoped metal oxides, nitrides, or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers. If the lateral reflector is conductive, in some examples it can be electrically coupled to the n-doped layer 502c and act as a cathode electrical contact.

[0064] In some examples (e.g., as in Fig. 12A or Fig. 12B ), the cathode electrical contact may include a TCO layer 554 in direct contact with at least a portion of the light exit surface 511. The TCO layer 554 may include one or more of indium tin oxide, indium zinc oxide, one or more other transparent conductive oxides, or combinations or mixtures thereof.

[0065] In some examples (e.g., as in Figure 7-Figure 11 , Figure 13-Figure 16 ,or Fig.18), the cathode electrical contact may include a metal layer 552 in direct contact with at least a portion of the light exit surface 511. In some examples, the metal layer 552 may act as a reflective layer or a scattering layer on the light exit surface 511; the metal layer 552 may be formed on a peripheral portion of the light exit surface 511, leaving a central opening 521. In some examples, the metal layer 552 may function as both a cathode electrical contact and a reflective layer or a scattering layer. The metal layer 552 may include one or more of aluminum, silver, gold, or other metals or metal alloys.

[0066] In some examples (e.g., as in Fig.17 or Fig.19 ), the reflective layer or scattering layer on the light exit surface 511 may include one or more front dielectric layers 560. In some examples, the front dielectric layer 560 may include only a single layer of a single dielectric material; in other examples, the front dielectric layer 560 may include multiple layers or multiple materials. In some examples, the front dielectric layer 560 may include one or more of the following materials: doped or undoped silicon oxide, silicon nitride, or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides, or oxynitrides; one or more doped or undoped metal oxides, nitrides, or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers. In some examples, the reflective layer or scattering layer on the light exit surface 511 may include a dielectric multilayer reflector or a distributed Bragg reflector 562, which may include one or more of the following materials: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI or IV semiconductors; doped or undoped silicon oxide, silicon nitride or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides or oxynitrides; one or more doped or undoped metal oxides, nitrides or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers. If the front reflective layer or scattering layer is conductive, it may form at least a portion of the cathode electrical contact; if the front reflective layer or scattering layer is non-conductive, the cathode electrical contact may include, for example, a TCO layer 554 on at least the central region of the light exit surface 511, direct electrical coupling through the n-doped layer 502c of the side surface 513, or other suitable arrangements.

[0067] In some examples (not shown), the light emitting element 500 can include a front set of multiple nanostructured optical elements characterized by at least one element size relative to a nominal emission vacuum wavelength λ0 and characterized by at least one element shape (e.g., cylindrical, truncated cone, truncated pyramid, etc.). The nanostructured elements of the front set can be located on or within the front dielectric layer 560, or at the light exit surface 511, and can be arranged as an element array characterized by at least one element spacing relative to the nominal emission vacuum wavelength λ0. The element size, shape, and spacing of the front set can be selected to result in one or both of the following: (1) non-refractive transmissive redirection of at least a portion of light transmitted through the light exit surface 511 at the nominal emission vacuum wavelength λ0, or (2) non-specular reflective redirection of at least a portion of light incident on the light exit surface 511 at the nominal emission vacuum wavelength λ0 to propagate toward the anode contact surface 512. Examples of such nanostructured layers are disclosed in various references above in conjunction with the discussion of primary and secondary optical elements for pcLEDs 100 of array 200 .

[0068] In some examples, the nanostructured elements of the front set may include a large number of protrusions, holes, depressions, inclusions or structures of appropriate size and shape. In some examples, the nanostructured elements of the front set may include a single nanoantenna array or a dual nanoantenna array, a partial photonic bandgap structure, a photonic crystal, or a meta-atomic or meta-molecular array. In some examples, the non-zero size or spacing of the nanostructured elements of the front set may be (i) less than λ0 / n N , less than λ0 / 2n N , less than λ0 / 4n N or less than λ0 / 10n N , where n N is the refractive index of the n-doped layer; or (ii) less than λ0 / n F , less than λ0 / 2n F , less than λ0 / 4n F or less than λ0 / 10n F , where n F is the refractive index of the front dielectric layer. The nanostructured elements of the front assembly may include one or more materials selected from the group consisting of: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI, or IV semiconductors; doped or undoped silicon oxide, silicon nitride, or silicon oxynitride; one or more doped or undoped metal oxides, nitrides, or oxynitrides; one or more doped or undoped semiconductor oxides, nitrides, or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0069] In some examples (not shown), the light emitting element 500 may include an anti-reflection coating on the light exit surface 511 of the n-doped layer; in some examples, the anti-reflection coating is on the light exit surface 511 within the central opening 521. The anti-reflection coating may be of any suitable type or arrangement for reducing Fresnel reflection of emitted light incident on the light exit surface 511 at the nominal emission vacuum wavelength λ0 relative to reflection at a similar surface lacking the anti-reflection coating. Any suitable anti-reflection coating may be employed (e.g., a single quarter-wave layer, a multi-layer dielectric stack, a so-called moth-eye structure, etc.), and may be appropriately arranged based on the refractive index of the n-doped layer 502c and the medium positioned against the light exit surface 511.

[0070] In some examples (e.g., as in Figures 16 to 19 ), the light exit surface 511 may include roughening, texturing, or patterning. In some examples, the roughening, texturing, or patterning may only be present on the area of ​​the central opening 521 of the light exit surface 511, while in other examples, the entire light exit surface 511 may be roughened, textured, or patterned. Such roughening, texturing, or patterning may be arranged so as to present one or both of the following: (i) increased light extraction efficiency relative to a flat light exit surface, or (ii) non-specular internal reflection redirection of light incident on the light exit surface 511 from within the n-doped layer 502c relative to a flat light exit surface.

[0071] A method for making any of the disclosed light emitting elements 500 includes: (A) forming a p-doped semiconductor layer and an n-doped semiconductor layer 502b / 502c with an active layer 502a therebetween; (B) forming an anode electrical contact 502b electrically coupled to the p-doped semiconductor layer; and (C) forming a cathode electrical contact 502c electrically coupled to the n-doped semiconductor layer. This method may include forming any one or more or all of the structures, features, or arrangements discussed above.

[0072] In some examples, multiple light emitting elements 500 can be arranged in a light emitting array (e.g., as in Fig.9A and Fig. 9B or Fig. 20 In; more generally as in FIG. 2A to FIG. 6B). A plurality of light emitting elements 500 may be arranged in an array with their corresponding light exit surfaces 511 being in a substantially coplanar arrangement. In some examples, the plurality of light emitting elements 500 may include discrete, structurally distinct elements assembled together to form an array. In some other examples, the plurality of light emitting elements 500 of the array may be integrally formed together on a common substrate. In some integrally formed examples, the corresponding n-doped layers 502c of the LEDs may form a single continuous n-doped layer across the array. In some other integrally formed or assembled examples, the corresponding n-doped layers of the LEDs may be separated from each other with no direct electrical coupling between them.

[0073] In some examples of the array, the non-zero spacing of the light emitting elements 500 can be less than 1.0 mm, less than 0.5 mm, less than 0.3 mm, less than 0.2 mm, less than 0.10 mm, less than 0.08 mm, less than 0.05 mm, less than 0.03 mm, less than 0.02 mm, or less than 0.010 mm. In some examples, the non-zero spacing between adjacent light emitting elements 500 of the array can be less than 50 μm, less than 20 μm, less than 10 μm, less than 5 μm, less than 2 μm, less than 1.0 μm, or less than 0.5 μm. In some examples, the light emitting elements 500 of the array can exhibit a contrast ratio of greater than 5:1, greater than 10:1, greater than 20:1, greater than 50:1, greater than 100:1, or greater than 300:1 to the emitted light emitted from adjacent light emitting elements.

[0074] In some examples of arrays, the array may be arranged so that some or all of its light emitting elements 500 act as direct emitters, i.e., light emitted from the junction or active layer 502a is the output of the corresponding light emitting element 500. In some examples, the array may include one or more wavelength conversion structures (e.g., phosphor wavelength converters) on one or more or all of the light emitting elements 500, so that the output from those corresponding elements of the array includes down-converted light emitted by the wavelength conversion structure (with or without residual light emitted by the junction or active layer 502a). In some examples, such wavelength conversion structures may all emit at the same wavelength or wavelengths; in other examples, the wavelength conversion structures of some light emitting elements 500 may emit at a wavelength different from the wavelength emitted by the wavelength conversion structures of some other light emitting elements 500. In some examples, the wavelength conversion structure may be arranged as a discrete element on each light emitting element 500; in some other examples, the wavelength conversion structure may be a corresponding region of an adjacent layer above multiple light emitting elements 500 or above all light emitting elements 500.

[0075] In some examples (e.g., as in Fig. 20), a set of multiple independent conductive traces or interconnects 338 can be connected to corresponding anode electrical contacts (e.g., through anode bonding layer 536), where each anode electrical contact is connected to a single corresponding trace or interconnect 338 of traces or interconnects 338 that is different from the corresponding trace or interconnect 338 connected to at least one other anode electrical contact. In some examples, each anode electrical contact can be connected to a single corresponding trace or interconnect 338 of traces or interconnects 338 that is different from the corresponding trace or interconnect 338 connected to all other anode electrical contacts. Another electrical trace or interconnect 338 can be connected to a cathode electrical contact (e.g., through cathode bonding layer 546). In some examples, one or more conductive traces or interconnects 338 can include one or more metals or metal alloys, such as one or more of aluminum, silver, or gold.

[0076] In some examples, any suitable type or arrangement of driver circuitry 310 (e.g., in combination with any suitable analog circuitry, digital circuitry, general or application specific integrated circuits, microprocessors, or combinations thereof) can be connected to each cathode electrical contact and each anode electrical contact via electrical traces or interconnects 338. In some examples, driver circuitry 310 can be constructed and connected to provide an electrical drive current that flows through the array and causes the array to emit light, and further constructed and connected such that (i) a corresponding portion of the electrical drive current flows through one or more corresponding LEDs as a corresponding pixel current, and (ii) each pixel current amplitude is different from the corresponding pixel current amplitude of at least one other LED in the array. In some examples, different spatial distributions of pixel current amplitudes for elements 500 of the array can result in corresponding different spatial distributions of luminous intensity across the array.

[0077] One or more or all of the semiconductor layers 502a / 502b / 502c (e.g., refractive index, thickness, doping level), diode size or shape, separation between the anode electrical contact and the side surface 513, dielectric layer(s) 540 / 550 / 560 (e.g., thickness, refractive index, reflector structure, nanostructured elements), reflector 548 or 562, any nanostructured layer, or other structures or properties, among others, may be designed or optimized (through calculation, simulation, or iterative design / fabrication / testing of prototype or test devices) based on one or more selected figures of merit (FOMs). Device performance-based FOMs that may be considered may include, for example: (i) extraction efficiency; (ii) total radiant emission; (iii) angular distribution of radiant light emitted; (iv) fraction of radiant emission within a selected cone angle; (v) contrast between adjacent pixel regions for light emission; or (vi) other suitable or desired FOMs. Alternatively or in addition, cost reduction or manufacturing complexity reduction may be used as a FOM in the design or optimization process. Optimization for one FOM may result in non-optimal values ​​for one or more other FOMs. Note that a device that is not necessarily fully optimized with respect to any FOM may still provide an acceptable improvement in one or more FOMs; such partially optimized devices fall within the scope of the present disclosure or the appended claims.

[0078] A method for using an array including any of the disclosed light-emitting elements 500 includes: (A) selecting a first specified spatial distribution of element current amplitudes; (B) operating a drive circuit to provide the first specified spatial distribution of element current amplitudes to the elements 500 of the array, so that the array emits light according to a corresponding first spatial distribution of luminous intensity across the array; (C) selecting a second specified spatial distribution of element current amplitudes that is different from the first specified spatial distribution of element current amplitudes; and (D) operating the drive circuit to provide the second specified spatial distribution of element current amplitudes to the elements 500 of the array, so that the array emits light according to a corresponding second spatial distribution of luminous intensity across the array, which second spatial distribution is different from the first spatial distribution of luminous intensity.

[0079] A method for manufacturing an array comprising any of the disclosed light-emitting elements, comprising: (A) forming or assembling a plurality of light-emitting elements 500 to form an array; (B) forming one or more electrical traces or interconnects 338 connected to corresponding anode electrical contacts; and (C) (i) connecting a drive circuit 310 to the corresponding anode electrical contact using the corresponding electrical traces or interconnects 338, and (ii) connecting the drive circuit 310 to the corresponding cathode electrical contact using at least one corresponding trace or interconnect 338.

[0080] In addition to the foregoing, the following example embodiments are within the scope of the present disclosure or the appended claims.

[0081] Example 1. A light emitting element comprising: (a) a semiconductor light emitting diode (LED) comprising a p-doped semiconductor layer, an n-doped semiconductor layer, and an active light emitting layer between the p-doped layer and the n-doped layer, the LED being arranged to emit light at a nominal emission vacuum wavelength λ0, the light being generated by radiative recombination of charge carriers at the active layer, the LED having (i) a light exit surface of the n-doped layer opposite the active layer, (ii) an anode contact surface of the p-doped layer opposite the active layer, and (iii) side surfaces laterally confining the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer, the active layer extending to the side surfaces; (b) an anode electrical contact electrically coupled to the p-doped layer only over a central region of the anode contact surface, the central region being surrounded by a peripheral portion of the anode contact surface, the peripheral portion lacking direct electrical coupling to the anode electrical contact; and (c) a cathode electrical contact electrically coupled to the n-doped layer.

[0082] Example 2. The light-emitting element according to Example 1, further comprising a reflective layer or a scattering layer on a peripheral portion of the light exit surface, at least a portion of the anode contact surface, or at least a portion of the side surface, the reflective layer or the scattering layer on the light exit surface having a central opening passing therethrough, the reflective layer or the scattering layer forming an optical cavity that at least partially encloses the n-doped semiconductor layer and the p-doped semiconductor layer and the active layer.

[0083] Example 3. The light emitting element according to Example 1 further includes a reflective layer or a scattering layer on a peripheral portion of the light exit surface and having a central opening therethrough, at least a portion of the central opening being positioned opposite to at least a portion of a central region of the anode contact surface.

[0084] Example 4. The light-emitting element according to Example 1 further includes a reflective layer or a scattering layer on a peripheral portion of the light exit surface, at least a portion of the anode contact surface, or at least a portion of the side surface, the reflective layer or the scattering layer on the light exit surface having a central opening passing therethrough, at least a portion of the central opening being positioned opposite to at least a portion of a central area of ​​the anode contact surface, and the reflective layer or the scattering layer forming an optical cavity that at least partially encloses the n-doped semiconductor layer and the p-doped semiconductor layer and the active layer.

[0085] Example 5. A light emitting element comprising: (a) a semiconductor light emitting diode (LED) comprising a p-doped semiconductor layer, an n-doped semiconductor layer, and an active light emitting layer between the p-doped layer and the n-doped layer, the LED being arranged to emit light at a nominal emission vacuum wavelength λ0, the light being generated by radiative recombination of charge carriers at the active layer, the LED having (i) a light exit surface of the n-doped layer opposite the active layer, (ii) an anode contact surface of the p-doped layer opposite the active layer, and (iii) side surfaces laterally confining the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer, the active layer extending to the side surfaces; (b) an anode electrical contact electrically coupled to the p-doped layer on a central region of the anode contact surface, leaving a peripheral portion of the anode contact surface not directly electrically coupled to the anode electrical contact; (c) a cathode electrical contact electrically coupled to the n-doped layer; and (d) a reflective or scattering layer on a peripheral portion of the light exit surface and having a central opening therethrough, at least a portion of the central opening being positioned opposite at least a portion of the central region of the anode contact surface.

[0086] Example 6. According to the light emitting element of any one of Examples 3 to 5, the entire central opening is positioned opposite to at least a portion of the central area of ​​the anode contact surface.

[0087] Example 7. According to the light emitting element of any one of Examples 3 to 5, the entire central area of ​​the anode contact surface is positioned opposite to at least a portion of the central opening.

[0088] Example 8. According to the light emitting element of any one of Examples 3 to 7, the central opening is concentrically located opposite to a central area of ​​the anode contact surface.

[0089] Example 9. The light emitting element according to Example 8, wherein the central opening and the central area of ​​the anode contact surface are substantially the same size and shape.

[0090] Example 10. A light emitting element, comprising: (a) a semiconductor light emitting diode (LED), comprising a p-doped semiconductor layer, an n-doped semiconductor layer, and an active light emitting layer between the p-doped layer and the n-doped layer, the LED being arranged to emit light at a nominal emission vacuum wavelength λ0, the light being generated by radiative recombination of charge carriers at the active layer, the LED having (i) a light exit surface of the n-doped layer opposite to the active layer, (ii) an anode contact surface of the p-doped layer opposite to the active layer, and (iii) side surfaces laterally confining the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer, (a) an active layer extending to the side surface; (b) an anode electrical contact, which is electrically coupled to the p-doped layer on the central area of ​​the anode contact surface, leaving the peripheral portion of the anode contact surface without being directly electrically coupled to the anode electrical contact; (c) a cathode electrical contact electrically coupled to the n-doped layer; and (d) a reflecting layer or a scattering layer on the peripheral portion of the light exit surface, at least a portion of the anode contact surface, or at least a portion of the side surface, the reflecting layer or the scattering layer on the light exit surface having a central opening passing therethrough, the reflecting layer or the scattering layer forming an optical cavity that at least partially encloses the n-doped semiconductor layer and the p-doped semiconductor layer and the active layer.

[0091] Example 11. According to any one of Examples 2 to 10, the separation between the lateral edge of the central opening and the side surface is greater than 1.0 μm, 2 μm, 5 μm, 10 μm, 20 μm or 50 μm.

[0092] Example 12. The light emitting element according to any one of Examples 1 to 11, wherein the separation between the lateral edge and the side surface of the anode electrical contact is greater than a characteristic lateral diffusion distance of charge carriers diffusing along the active layer within a characteristic radiative lifetime of those diffusing charge carriers.

[0093] Example 13. The light emitting element of any of Examples 1 to 12, wherein the separation between the lateral edge and the side surface of the anode electrical contact is greater than 1.0 μm, 2.0 μm, 5 μm, 10 μm, 20 μm, or 50 μm.

[0094] Example 14. In the light emitting element according to any one of Examples 1 to 13, the side surface laterally confines the entire n-doped layer.

[0095] Example 15. The light emitting element according to any one of Examples 1 to 14, wherein the side surface is substantially flat and substantially perpendicular to the light exit surface and the anode contact surface.

[0096] Example 16. The light emitting element according to any one of Examples 1 to 14, wherein the side surface forms an obtuse inner angle with the anode contact surface.

[0097] Example 17. The light emitting element according to any one of Examples 1 to 14, wherein the side surface forms an obtuse internal angle with the light exiting surface.

[0098] Example 18. The light emitting element of any of Examples 1 to 17, further comprising an electrically insulating back dielectric layer on a peripheral portion of the anode contact surface, the peripheral portion lacking direct electrical coupling to the anode electrical contact.

[0099] Example 19. According to the light-emitting element described in Example 18, the back dielectric layer includes one or more of the following materials: doped or undoped silicon oxide, silicon nitride or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides or oxynitrides; one or more doped or undoped metal oxides, nitrides or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0100] Example 20. According to any one of Examples 1 to 19, the anode electrical contact comprises a metal layer directly contacting the central region of the anode contact surface, the metal layer comprising one or more of aluminum, silver, gold, or other metals or metal alloys.

[0101] Example 21. The light emitting element of Example 20, wherein the anode electrical contact is a portion of the conductive anode bonding layer that is in direct electrical contact with a central region of the anode contact surface.

[0102] Example 22. According to any one of Examples 1 to 19, the anode electrical contact includes a transparent conductive oxide (TCO) layer directly contacting the central region of the anode contact surface, and the TCO layer includes one or more of indium tin oxide, indium zinc oxide, one or more other transparent conductive oxides, or a combination or mixture thereof.

[0103] Example 23. The light emitting element of Example 22, wherein the back dielectric layer covers the TCO layer opposite the anode contact surface, and the light emitting element further comprises at least one external, local, conductive via electrically coupled to the TCO layer and passing through the back dielectric layer.

[0104] Example 24. The light emitting element of Example 23, further comprising a back reflector on the back dielectric layer opposite the TCO layer and the anode contact surface.

[0105] Example 25. According to the light emitting element of Example 24, the back reflector comprises one or more of a metal layer, a dielectric multilayer reflector, or a distributed Bragg reflector.

[0106] Example 26. According to any one of Examples 24 or 25, the back reflector includes one or more materials selected from the group consisting of: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI or IV semiconductors; doped or undoped silicon oxide, silicon nitride or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides or oxynitrides; one or more doped or undoped metal oxides, nitrides or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0107] Example 27. According to the light-emitting element described in any one of Examples 18 to 26, the back dielectric layer includes at least a central portion opposite to the central area of ​​the anode contact surface, the central portion protruding away from the anode contact surface, and arranged so as to redirect a portion of light propagating from the active layer through the anode contact surface to propagate back through the anode contact surface toward the light exit surface.

[0108] Example 28. According to the light emitting element of Example 27, the protruding central portion of the rear dielectric layer has a tapered shape that decreases in lateral extent as the distance from the anode contact surface increases.

[0109] Example 29. The light-emitting element according to any one of Examples 18 to 28 further includes a back collection of multiple nanostructured optical elements, which (i) are located on or in the back dielectric layer, or at the anode contact surface; (ii) are characterized by at least one element size relative to the nominal emission vacuum wavelength λ0 and characterized by at least one element shape; and (iii) are arranged as an element array, characterized by at least one element spacing relative to the nominal emission vacuum wavelength λ0; (iv) the element size, shape and spacing of the back collection lead to one or more of the following: (1) non-specular reflection redirection of at least a portion of light propagating in the dielectric layer at the nominal emission vacuum wavelength λ0 to propagate toward the light exit surface, (2) non-specular reflection or non-refractive transmission redirection of at least a portion of light incident on the anode contact surface at the nominal emission vacuum wavelength λ0 to propagate toward the light exit surface, (3) increase in the Purcell factor for light emitted by the active layer, or (4) enhanced directionality of light emitted by the active layer.

[0110] Example 30. According to the light-emitting array of Example 29, the nanostructured elements assembled on the back include a large number of protrusions, holes, recesses, inclusions or structures of appropriate sizes and shapes.

[0111] Example 31. According to any one of Examples 29 or 30, the nanostructured elements assembled on the back include a single nanoantenna array or a double nanoantenna array, a partial photonic bandgap structure, a photonic crystal, or a meta-atomic or meta-molecular array.

[0112] Example 32. According to any one of Examples 29 to 31, the non-zero size or spacing of the nanostructured elements of the back set is less than λ0 / n P , less than λ0 / 2n P , less than λ0 / 4n P , or less than λ0 / 10n P , n P is the refractive index of the p-doped layer.

[0113] Example 33. According to any one of Examples 29 to 32, the non-zero spacing between the nanostructured elements of the active layer and the back set is less than λ0 / n P , less than λ0 / 2n P , less than λ0 / 4n P or less than λ0 / 10n P , n P is the refractive index of the p-doped layer.

[0114] Example 34. According to any one of Examples 29 to 33, the non-zero size or spacing of the nanostructured elements of the back set is less than λ0 / n B , less than λ0 / 2n B , less than λ0 / 4n B , or less than λ0 / 10n B , n B is the refractive index of the back dielectric layer.

[0115] Example 35. According to the light-emitting array described in any one of Examples 29 to 34, the nanostructured elements of the back assembly include one or more materials selected from the group consisting of: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI or IV semiconductors; doped or undoped silicon oxide, silicon nitride or silicon oxynitride; one or more doped or undoped metal oxides, nitrides or oxynitrides; one or more doped or undoped semiconductor oxides, nitrides or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0116] Example 36. The light emitting element according to any one of Examples 1 to 35 further includes a conductive anode bonding layer electrically coupled to the anode contact surface through the anode electrical contact and electrically isolated from the active layer and the n-doped layer.

[0117] Example 37. In the light-emitting element according to Example 36, the anode bonding layer includes one or more of aluminum, silver, gold, or other metals or metal alloys.

[0118] Example 38. In the light-emitting element according to any one of Examples 36 or 37, the anode electrical contact includes a transparent conductive oxide (TCO) layer between the anode bonding layer and the anode contact surface and in direct contact with the central area of ​​the anode contact surface, the TCO layer including one or more of indium tin oxide, indium zinc oxide, one or more other transparent conductive oxides, or a combination or mixture thereof.

[0119] Example 39. The light-emitting element according to any one of Examples 18 to 38 further comprises an electrically insulating lateral dielectric layer on at least part of the side surface, the lateral dielectric layer being adjacent to the back dielectric layer and surrounding the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer.

[0120] Example 40. The light-emitting element according to any one of Examples 1 to 38 further comprises an electrically insulating lateral dielectric layer on at least part of the side surface, the lateral dielectric layer surrounding the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer.

[0121] Example 41. According to any one of Examples 39 or 40, the lateral dielectric layer includes one or more of the following materials: doped or undoped silicon oxide, silicon nitride or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides or oxynitrides; one or more doped or undoped metal oxides, nitrides or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0122] Example 42. According to any one of Examples 39 to 41, the lateral dielectric layer surrounds the entire n-doped layer.

[0123] Example 43. The light-emitting element according to any one of Examples 39 to 41 further includes a conductive cathode bonding layer electrically coupled to the cathode electrical contact, a lateral dielectric layer electrically isolating the p-doped layer and the active layer from the cathode bonding layer, and the cathode bonding layer is electrically coupled to the n-doped layer by direct contact with at least a sidewall portion or a peripheral portion thereof so as to act as a cathode electrical contact.

[0124] Example 44. The light emitting element of any one of Examples 39 to 42 further comprises a conductive cathode bonding layer electrically coupled to the cathode electrical contact, the lateral dielectric layer electrically isolating the p-doped layer and the active layer from the cathode bonding layer.

[0125] Example 45. In the light-emitting element according to any one of Examples 43 or 44, the cathode bonding layer includes one or more of aluminum, silver, gold, or other metals or metal alloys.

[0126] Example 46. According to the light emitting element of any one of Examples 43 to 45, at least a portion of the cathode bonding layer is arranged to function as a lateral reflector at a side wall.

[0127] Example 47. According to any one of Examples 39 to 46, the lateral dielectric layer comprises a single layer of a single dielectric material.

[0128] Example 48. According to any one of Examples 39 to 46, the lateral dielectric layer includes a lateral reflector between the side surface and the bonding layer.

[0129] Example 49. According to the light-emitting element described in Example 48, the lateral reflector includes a dielectric multilayer reflector or a distributed Bragg reflector.

[0130] Example 50. According to any one of Examples 48 or 49, the lateral reflector includes one or more of the following materials: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI or IV semiconductors; doped or undoped silicon oxide, silicon nitride or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides or oxynitrides; one or more doped or undoped metal oxides, nitrides or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0131] Example 51. The light emitting element according to any one of Examples 1 to 50 further includes a conductive cathode bonding layer electrically coupled to the cathode electrical contact and electrically isolated from the p-doped layer and the active layer.

[0132] Example 52. In the light-emitting element according to Example 51, the cathode bonding layer includes one or more of aluminum, silver, gold, or other metals or metal alloys.

[0133] Example 53. According to any one of Examples 1 to 52, the cathode electrical contact comprises a TCO layer in direct contact with at least a portion of the light exit surface, the TCO layer comprising one or more of indium tin oxide, indium zinc oxide, one or more other transparent conductive oxides, or a combination or mixture thereof.

[0134] Example 54. According to any one of Examples 1 to 52, the cathode electrical contact comprises a metal layer in direct contact with at least a portion of the light emitting surface, the metal layer comprising one or more of aluminum, silver, gold, or other metals or metal alloys.

[0135] Example 55. According to the light emitting device described in any one of Examples 2 to 54, the reflective layer or the scattering layer on the light exiting surface comprises a metal layer including one or more of aluminum, silver, gold, or other metals or metal alloys.

[0136] Example 56. According to the light emitting device of Example 55, the metal layer forms at least a part of the cathode electrical contact.

[0137] Example 57. According to the light emitting device according to any one of Examples 2 to 56, the reflective layer or the scattering layer on the light exiting surface includes one or more front dielectric layers.

[0138] Example 58. According to the light-emitting device described in Example 57, one or more front dielectric layers include one or more of the following materials: doped or undoped silicon oxide, silicon nitride, or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides, or oxynitrides; one or more doped or undoped metal oxides, nitrides, or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0139] Example 59. According to any one of Examples 57 or 58, the front dielectric layer comprises a single layer of a single dielectric material.

[0140] Example 60. In the light emitting element according to any one of Examples 57 or 58, the reflective layer or the scattering layer on the light exiting surface comprises a dielectric multilayer reflector or a distributed Bragg reflector.

[0141] Example 61. According to the light-emitting element described in Example 60, the reflective layer or scattering layer on the light-emitting surface includes one or more of the following materials: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI or IV semiconductors; doped or undoped silicon oxide, silicon nitride or silicon oxynitride; one or more doped or undoped semiconductor oxides, nitrides or oxynitrides; one or more doped or undoped metal oxides, nitrides or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0142] Example 62. The light-emitting element according to any one of Examples 1 to 61 further includes a front set of multiple nanostructured optical elements, which (i) are located on or within the front dielectric layer, or at the light exit surface; (ii) are characterized by at least one element size relative to the nominal emission vacuum wavelength λ0 and characterized by at least one element shape; and (iii) are arranged as an element array, characterized by at least one element spacing relative to the nominal emission vacuum wavelength λ0; (iv) the element size, shape and spacing of the front set result in one or both of the following: (1) non-refractive transmission redirection of at least a portion of light transmitted through the light exit surface at the nominal emission vacuum wavelength λ0, or (2) non-specular reflection redirection of at least a portion of light incident on the light exit surface at the nominal emission vacuum wavelength λ0 to propagate toward the anode contact surface.

[0143] Example 63. According to the light-emitting array described in Example 62, the nanostructured elements of the front assembly include a large number of protrusions, holes, recesses, inclusions or structures of appropriate sizes and shapes.

[0144] Example 64. According to any one of Examples 62 or 63, the front-assembled nanostructured elements include a single nanoantenna array or a double nanoantenna array, a partial photonic bandgap structure, a photonic crystal, or a meta-atomic or meta-molecular array.

[0145] Example 65. According to any one of Examples 62 to 64, the non-zero size or spacing (i) of the front set of nanostructured elements is less than λ0 / n N , less than λ0 / 2n N , less than λ0 / 4n N or less than λ0 / 10n N , n N is the refractive index of the n-doped layer, or (ii) is less than λ0 / n F , less than λ0 / 2n F , less than λ0 / 4n F or less than λ0 / 10n F , n F is the refractive index of the front dielectric layer.

[0146] Example 66. According to any one of Examples 62 to 65, the front-assembled nanostructured elements include one or more materials selected from the group consisting of: one or more metals or metal alloys; doped or undoped silicon; one or more doped or undoped III-V, II-VI, or IV semiconductors; doped or undoped silicon oxide, silicon nitride, or silicon oxynitride; one or more doped or undoped metal oxides, nitrides, or oxynitrides; one or more doped or undoped semiconductor oxides, nitrides, or oxynitrides; one or more optical glasses; or one or more doped or undoped polymers.

[0147] Example 67. A light-emitting element according to any one of Examples 1 to 66, further comprising an antireflection coating on at least a portion of the light exit surface of the n-doped layer, the antireflection coating being arranged so as to reduce reflection of emitted light incident on the surface at a nominal emission vacuum wavelength λ0 relative to reflection at a similar surface lacking the antireflection coating.

[0148] Example 68. A light-emitting element according to any one of Examples 2 to 66, further comprising an antireflection coating on an exit surface of the n-doped layer within the central opening, the antireflection coating being arranged to reduce reflection of emitted light incident on the surface at a nominal emission vacuum wavelength λ0 relative to reflection at a similar surface lacking the antireflection coating.

[0149] Example 69. According to any one of Examples 1 to 66, the light exit surface includes a roughening, texturing or patterning arranged to present one or both of the following: (i) increased light extraction efficiency relative to a flat light exit surface, or (ii) non-specular internal reflection redirection of light incident on the light exit surface from within the n-doped layer relative to a flat light exit surface.

[0150] Example 70. According to any one of Examples 2 to 66, the light exit surface includes a roughening, texturing or patterning arranged to present one or both of the following: (i) an increase in light extraction efficiency through the central opening relative to a flat light exit surface, or (ii) a redirection of non-specular internal reflection of light incident on the light exit surface from within the n-doped layer relative to a flat light exit surface.

[0151] Example 71. The light emitting element according to any one of Examples 1 to 70, the LED comprising one or more doped or undoped III-V, II-VI or IV semiconductor materials or alloys or mixtures thereof.

[0152] Example 72. According to any one of Examples 1 to 71, the nominal emission vacuum wavelength λ0 is greater than 0.20 μm, greater than 0.4 μm, greater than 0.8 μm, less than 10 μm, less than 2.5 μm, or less than 1.0 μm.

[0153] Example 73. According to the light-emitting element described in any one of Examples 1 to 72, the active layer includes one or more pn junctions, one or more quantum wells, one or more multi-quantum wells, or one or more quantum dots.

[0154] Example 74. The light emitting element according to any one of Examples 1 to 73, wherein the total non-zero thickness of the layers of the LED is less than 20 μm, less than 10 μm, less than 5 μm, less than 3 μm, less than 2 μm, less than 1.5 μm, or less than 1.0 μm.

[0155] Example 75. In the light-emitting element according to any one of Examples 1 to 74, the non-zero thickness of the p-doped layer is less than 2 μm, less than 1.0 μm, less than 0.8 μm, less than 0.5 μm, less than 0.3 μm, less than 0.2 μm, or less than 0.10 μm.

[0156] Example 76. The light emitting element according to any one of Examples 1 to 75, wherein the layer of the LED supports a maximum of 15, 10, 8, 5, or 3 laterally propagating optical modes.

[0157] Example 77. The light emitting element of any one of Examples 1 to 76, wherein the non-zero thickness of the p-doped layer is selected to result in an angular distribution of light emitted within the LED that is close to a specified angular distribution.

[0158] Example 78. A method for manufacturing a light-emitting element according to any one of Examples 1 to 77, the method comprising: (A) forming a p-doped semiconductor layer and an n-doped semiconductor layer with an active layer therebetween; (B) forming an anode electrical contact electrically coupled to the p-doped semiconductor layer; and (C) forming a cathode electrical contact electrically coupled to the n-doped semiconductor layer.

[0159] Example 79. A light emitting array comprising a plurality of light emitting elements according to any one of Examples 1 to 77, the light emitting elements being arranged with their corresponding light exit surfaces in a substantially coplanar arrangement.

[0160] Example 80. According to the light emitting array of Example 79, the corresponding n-doped layers of the LEDs are separated from each other, and there is no direct electrical coupling between the corresponding n-doped layers.

[0161] Example 81. The light emitting array of Example 79, wherein the plurality of light emitting elements comprises discrete, structurally distinct elements assembled together to form the array.

[0162] Example 82. The light emitting array according to any one of Examples 79 or 80, wherein a plurality of light emitting elements of the array are integrally formed together on a common substrate.

[0163] Example 83. The light emitting array of Example 82, wherein the corresponding n-doped layers of the LEDs form a single continuous n-doped layer across the array.

[0164] Example 84. According to any one of Examples 79 to 83, the non-zero spacing of the light emitting elements of the array is less than 1.0 mm, less than 0.5 mm, less than 0.3 mm, less than 0.2 mm, less than 0.10 mm, less than 0.08 mm, less than 0.05 mm, less than 0.03 mm, less than 0.02 mm, or less than 0.010 mm.

[0165] Example 85. The light emitting array of any of Examples 79 to 84, wherein the non-zero separation between adjacent light emitting elements of the array is less than 50 μm, less than 20 μm, less than 10 μm, less than 5.0 μm, less than 2 μm, less than 1.0 μm, or less than 0.5 μm.

[0166] Example 86. According to any one of Examples 79 to 85, the light emitting array of the array has a contrast ratio of greater than 5:1, greater than 10:1, greater than 20:1, greater than 50:1, greater than 100:1, or greater than 300:1 for the emitted light emitted from adjacent light emitting elements.

[0167] Example 87. The light emitting array of any of Examples 79 to 86 further includes a set of multiple independent conductive traces or interconnects connected to corresponding anode electrical contacts, each anode electrical contact connected to a single corresponding trace or interconnect of the traces or interconnects that is different from the corresponding trace or interconnect connected to at least one other anode electrical contact.

[0168] Example 88. The light emitting element according to Example 87, wherein the one or more conductive traces or interconnects include one or more of aluminum, silver, gold, or one or more other metals or metal alloys.

[0169] Example 89. The light emitting array of any of Examples 87 or 88, each anode electrical contact is connected to a single corresponding one of the traces or interconnects that is different from the corresponding traces or interconnects connected to all other anode electrical contacts.

[0170] Example 90. A light emitting array according to any of Examples 87 to 89, further comprising a drive circuit connected (i) to each cathode electrical contact and (ii) to each anode electrical contact by electrical traces or interconnects, the drive circuit being constructed and connected to provide an electrical drive current that flows through the array and causes the array to emit light, and being further constructed and connected so that (i) a corresponding portion of the electrical drive current flows through one or more corresponding LEDs as a corresponding element current, and (ii) the amplitude of each element current is different from the amplitude of the corresponding element current of at least one other LED of the array.

[0171] Example 91. A method of using a light emitting array according to Example 90, the method comprising: (A) selecting a first specified spatial distribution of element current amplitudes; (B) operating the drive circuit to provide the first specified spatial distribution of element current amplitudes to LEDs of the array, so that the array emits light according to a corresponding first spatial distribution of luminous intensity across the array; (C) selecting a second specified spatial distribution of element current amplitudes that is different from the first specified spatial distribution of element current amplitudes; and (D) operating the drive circuit to provide the second specified spatial distribution of element current amplitudes to LEDs of the array, so that the array emits light according to a corresponding second spatial distribution of luminous intensity across the array, the second spatial distribution being different from the first spatial distribution of luminous intensity.

[0172] Example 92. A method for making a light emitting array according to Example 90, the method comprising: (A) forming or assembling a plurality of light emitting elements to form an array; (B) forming one or more electrical traces or interconnects connected to corresponding anode electrical contacts; and (C) (i) connecting a drive circuit to the corresponding anode electrical contact using the electrical traces or interconnects, and (ii) connecting the drive circuit to the corresponding cathode electrical contact.

[0173] The present disclosure is illustrative and not restrictive. Further modifications will be clear to those skilled in the art in light of the present disclosure and are intended to fall within the scope of the present disclosure or the appended claims. It is intended that equivalents of the disclosed example embodiments and methods or modifications thereof should fall within the scope of the present disclosure or the appended claims.

[0174] In the foregoing detailed description, various features in several example embodiments may be combined together for the purpose of streamlining the disclosure. This method of disclosure should not be interpreted as reflecting the following intention: any claimed embodiment requires more features than those explicitly listed in the corresponding claim. On the contrary, as reflected in the appended claims, the subject matter of the invention may lie in less than all the features of a single disclosed example embodiment. Therefore, the present disclosure should be interpreted as implicitly disclosing any embodiment with any suitable subset of one or more features, which are shown, described or claimed in this application, including those subsets that may not be explicitly disclosed herein. The "suitable" subset of features only includes features that are neither incompatible nor mutually exclusive with respect to any other features of the subset. Therefore, the appended claims are hereby incorporated into the detailed description in their entirety, with each claim itself as a separately disclosed embodiment. In addition, each of the appended dependent claims should be interpreted as being merely for the purpose of being disclosed by the said incorporation of the claim into the detailed description, as if written in multiple dependent forms and subordinate to all the preceding claims that are not inconsistent therewith. It should also be noted that the cumulative scope of the appended claims may but does not necessarily cover all the subject matter disclosed in this application.

[0175] The following explanations shall apply for the purposes of this disclosure and the appended claims. Unless otherwise expressly stated, the words "include", "comprising", "having" and their variations, wherever they appear, shall be understood as open terms, with the same meaning as if a phrase such as "at least" were appended after each instance thereof. The article "a" shall be interpreted as "one or more", unless "only one", "single" or other similar restrictions are expressly stated or implied in a particular context; similarly, the article "the" shall be interpreted as "one or more of...", unless "only one of...", "single of..." or other similar restrictions are expressly stated or implied in a particular context. The conjunction "or" shall be interpreted as inclusive, unless: (i) it is otherwise expressly stated, for example, by using "or...or...", "only one of..." or similar language; or (ii) two or more of the listed alternatives are understood or disclosed (implicitly or explicitly) as being incompatible or mutually exclusive in a particular context. In the latter case, "or" will be understood to cover only those combinations involving non-mutually exclusive alternatives. In one example, each of "a dog or a cat," "one or more of a dog or a cat," and "one or more dogs or cats" will be interpreted as one or more dogs without any cats, or one or more cats without any dogs, or one or more of each. In another example, each of "a dog, a cat, or a mouse," "one or more of a dog, a cat, or a mouse," and "one or more dogs, cats, or mice" will be interpreted as (i) one or more dogs without any cats or mice, (ii) one or more cats without any dogs or mice, (iii) one or more mice without any dogs or cats, (iv) one or more dogs and one or more cats without any mice, (v) one or more dogs and one or more mice without any cats, (vi) one or more cats and one or more mice without any dogs, or (vii) one or more dogs, one or more cats, and one or more mice. In another example, each of “two or more of dogs, cats, or mice” or “two or more dogs, cats, or mice” would be interpreted as (i) one or more dogs and one or more cats without any mice, (ii) one or more dogs and one or more mice without any cats, (iii) one or more cats and one or more mice without any dogs, or (iv) one or more dogs, one or more cats, and one or more mice; “three or more,” “four or more,” etc. would be similarly interpreted.

[0176] For purposes of this disclosure or the appended claims, when numerical values ​​are recited (with or without terms such as "about," "approximately equal to," "substantially equal to," "greater than about," "less than about," and the like), standard conventions regarding measurement precision, rounding error, and significant figures shall apply unless a different interpretation is expressly stated. With respect to zero quantities described by phrases such as "substantially prevented," "substantially absent," "substantially eliminated," "approximately equal to zero," "negligible," and the like, each such phrase shall mean a situation in which the quantity in question has been reduced or minimized to such an extent that, in the context of the intended operation or use of the disclosed or claimed apparatus or method, for practical purposes, the overall behavior or performance of the apparatus or method is indistinguishable from that which would have occurred if the zero quantity had been substantially completely removed, was exactly equal to zero, or was otherwise exactly zero.

[0177] For purposes of this disclosure and the appended claims, any labeling of elements, steps, limitations, or other parts of embodiments, examples, or claims (e.g., first, second, third, etc., (a), (b), (c), etc., or (i), (ii), (iii), etc.) is for clarity purposes only and should not be interpreted as implying any kind of ordering or priority of the parts so labeled. If any such ordering or priority is intended, it will be explicitly listed in the embodiments, examples, or claims, or in some instances, it will be implicit or inherent based on the specific content of the embodiments, examples, or claims. In the appended claims, if it is intended to invoke the provisions of 35 USC § 112(f) in a device claim, then the word "means" will appear in the device claim. If it is intended to invoke those provisions in a method claim, then the words "step for..." will appear in the method claim. Conversely, if the words "means" or "step for..." do not appear in a claim, then the provisions of 35 USC § 112(f) are not intended to be invoked for use in that claim.

[0178] If any one or more disclosures are incorporated herein by reference, and such incorporated disclosures conflict with the present disclosure in part or in whole, or differ in scope from the present disclosure, then to the extent of the conflict, the broader disclosure, or the broader definition of terms, the present disclosure shall prevail. If such incorporated disclosures conflict with each other in part or in whole, then to the extent of the conflict, the disclosure of the later date shall prevail.

[0179] An abstract is provided as needed to aid those searching for a specific subject matter within the patent document. However, the abstract is not intended to imply that any particular claim necessarily covers any element, feature, or limitation listed therein. The scope of the subject matter covered by each claim should be determined solely by the listing of that claim.

Claims

1. A light emitting element, comprising: A semiconductor light emitting diode (LED) comprising a p-doped semiconductor layer, an n-doped semiconductor layer, and an active light emitting layer between the p-doped layer and the n-doped layer, the LED being arranged to emit light at a nominal emission vacuum wavelength λ0, the light being generated by radiative recombination of charge carriers at the active layer, the LED having (i) a light exit surface of the n-doped layer opposite the active layer, (ii) an anode contact surface of the p-doped layer opposite the active layer, and (iii) side surfaces laterally confining the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer, the active layer extending to the side surfaces; an anode electrical contact electrically coupled to the p-doped layer only over a central region of the anode contact surface, the central region being surrounded by a peripheral portion of the anode contact surface, the peripheral portion lacking direct electrical coupling to the anode electrical contact; and A cathode electrical contact is electrically coupled to the n-doped layer.

2. The light-emitting element according to claim 1, further comprising a reflective layer or a scattering layer on a peripheral portion of the light exit surface, at least a portion of the anode contact surface, or at least a portion of the side surface, the reflective layer or the scattering layer on the light exit surface having a central opening therethrough, and one or both of the following are performed: (i) the reflective layer or the scattering layer forms an optical cavity that at least partially encloses the n-doped semiconductor layer and the p-doped semiconductor layer and the active layer, or (ii) at least a portion of the central opening is positioned opposite to at least a portion of a central area of ​​the anode contact surface.

3. The light emitting element of claim 1 , wherein the separation between the lateral edge of the anode electrical contact and the side surface is greater than a characteristic lateral diffusion distance of charge carriers diffusing along the active layer within a characteristic radiation lifetime of those diffusing charge carriers. 4 . The light emitting element of claim 1 , wherein the separation between a lateral edge of the anode electrical contact and the side surface is greater than 5 μm. 5 . The light-emitting element according to claim 1 , wherein the anode electrical contact comprises a metal layer directly contacting a central region of the anode contact surface, wherein the metal layer comprises one or more of aluminum, silver, gold, or other metals or metal alloys.

6. The light emitting element of claim 1 further comprising an electrically insulating back dielectric layer on a peripheral portion of the anode contact surface, the peripheral portion lacking direct electrical coupling to the anode electrical contact.

7. The light-emitting element of claim 6, wherein the anode electrical contact comprises a transparent conductive oxide (TCO) layer in direct contact with a central region of the anode contact surface, the TCO layer comprising one or more of indium tin oxide, indium zinc oxide, one or more other transparent conductive oxides, or a combination or mixture thereof, the back dielectric layer covering the TCO layer opposite to the anode contact surface, the light-emitting element further comprising at least one external, local, conductive via electrically coupled to the TCO layer and passing through the back dielectric layer.

8. The light-emitting element according to claim 7 further comprises a back reflector on the back dielectric layer opposite to the TCO layer and the anode contact surface, the back reflector comprising one or more of a metal layer, a dielectric multilayer reflector, or a distributed Bragg reflector.

9. The light-emitting element according to claim 6, wherein the back dielectric layer includes at least a central portion opposite to a central area of ​​the anode contact surface, the central portion protruding away from the anode contact surface and arranged to redirect a portion of light propagating from the active layer through the anode contact surface to propagate back through the anode contact surface toward the light exit surface, the protruding central portion of the back dielectric layer having a tapered shape, and the tapered shape decreases in lateral extent as the distance from the anode contact surface increases.

10. The light-emitting element of claim 6, further comprising a back collection of a plurality of nanostructured optical elements, which (i) are located on or within the back dielectric layer, or at the anode contact surface; (ii) are characterized by at least one element dimension relative to the nominal emission vacuum wavelength λ0 and by at least one element shape; and (iii) are arranged as an element array, characterized by at least one element spacing relative to a nominal emission vacuum wavelength λ0; and (iv) the element size, shape and spacing of the back assembly result in one or more of the following: (1) non-specular reflection redirection of at least a portion of light propagating within the dielectric layer at the nominal emission vacuum wavelength λ0 to propagate toward a light exit surface, (2) non-specular reflection or non-refractive transmission redirection of at least a portion of light incident on the anode contact surface at the nominal emission vacuum wavelength λ0 to propagate toward the light exit surface, (3) an increase in the Purcell factor for light emitted by the active layer, or (4) an enhancement in the directionality of light emitted by the active layer. 11 . The light emitting element according to claim 1 , further comprising a conductive anode bonding layer, the conductive anode bonding layer being electrically coupled to the anode contact surface through the anode electrical contact and being electrically isolated from the active layer and the n-doped layer.

12. The light emitting element of claim 1, further comprising an electrically insulating lateral dielectric layer on at least part of the side surface, the lateral dielectric layer surrounding the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer.

13. The light emitting element of claim 12, further comprising a conductive cathode bonding layer electrically coupled to the cathode electrical contact, the lateral dielectric layer electrically isolating the p-doped layer and the active layer from the cathode bonding layer. 14 . The light emitting element according to claim 12 , the lateral dielectric layer comprising a lateral reflector between the side surface and the bonding layer, the lateral reflector comprising a dielectric multilayer reflector or a distributed Bragg reflector.

15. The light-emitting element of claim 1, wherein the cathode electrical contact comprises a TCO layer in direct contact with at least a portion of the light exit surface, the TCO layer comprising one or more of indium tin oxide, indium zinc oxide, one or more other transparent conductive oxides, or a combination or mixture thereof.

16. The light-emitting element according to claim 1, wherein the cathode electrical contact comprises a metal layer in direct contact with at least a portion of the light exit surface, the metal layer comprising one or more of aluminum, silver, gold, or other metals or metal alloys, and the metal layer acts as a reflector.

17. The light emitting device according to claim 2, the reflective layer or scattering layer on the light exit surface comprises one or more front dielectric layers, dielectric multilayer reflectors, or distributed Bragg reflectors.

18. The light-emitting element of claim 1 , wherein the light exit surface comprises a roughening, texturing or patterning arranged so as to present one or both of: (i) increased light extraction efficiency relative to a flat light exit surface, or (ii) non-specular internal reflection redirection of light incident on the light exit surface from within the n-doped layer relative to a flat light exit surface.

19. A light emitting array comprising a plurality of light emitting elements according to claim 1, the light emitting elements being arranged with their corresponding light exit surfaces in a substantially coplanar arrangement.

20. The light emitting array of claim 19, the non-zero spacing of the light emitting elements of the array being less than 0.2 mm, and the non-zero separation between adjacent light emitting elements of the array being less than 0.05 mm.

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