Piezoelectric drive electrode assembly, processing method and MEMS electric field sensor

Abstract

The present invention provides a piezoelectric drive electrode assembly, a processing method, and a MEMS electric field sensor, wherein the piezoelectric drive electrode assembly includes a base layer, a bottom insulating layer, and a piezoelectric electrode, wherein the piezoelectric electrode and the bottom insulating layer are sequentially superimposed on the base layer, and the piezoelectric electrode includes an upper metal electrode, a piezoelectric material layer, and a lower metal electrode that are sequentially superimposed, and further includes an upper shielding electrode and a lower shielding electrode, wherein: at least a portion of the upper shielding electrode is located in the upper region of the upper metal electrode and at least blocks a portion of the top end surface of the upper metal electrode; and the lower shielding electrode is located on the first side and / or the second side of the piezoelectric electrode and covers a portion of the top end surface of the bottom insulating layer. The present invention can not only prevent the measured electric field from being interfered with by the piezoelectric drive signal, but also prevent interference caused by the frequency of the piezoelectric drive signal being the same as the frequency of the induction signal of the electric field sensor.

Description

Technical Field

[0001] The present invention relates to the field of MEMS electric field sensors, and in particular to a piezoelectric drive electrode assembly, a processing method and a MEMS electric field sensor. Background Art

[0002] MEMS electric field sensors, as key components for measuring electric field strength, are widely used in many fields such as aerospace, smart grid, electrostatic protection, lightning warning, scientific research, etc.

[0003] In recent years, with the development of MEMS and micro-nanofabrication technologies, MEMS electric field sensors based on the charge induction principle have become a hot topic in research and application due to their advantages such as small size, low cost, easy integration, and mass production. Existing MEMS electric field sensors operate based on resonance or vibration, and are mostly driven by electrostatic or piezoelectric means. Through a periodic vibrating structure, they modulate the induced charge on the sensing electrode placed in the measured electric field environment, thereby generating an induced current proportional to the magnitude of the electric field to detect the measured electric field. Existing MEMS electric field sensors have various drive modes, including electrostatic drive and piezoelectric drive. Among them, the electrostatic drive mode has the problems of low driving force and high driving voltage, while the piezoelectric drive mode can effectively solve the above problems.

[0004] Figure 1 This is a piezoelectric electrode assembly used in existing MEMS electric field sensors, comprising a base layer 1, a bottom insulating layer 2, a lower metal electrode 3, a piezoelectric material layer 4, an upper metal electrode 5, and a transmission line 6. The lower metal electrode 3, the piezoelectric material layer 4, the upper metal electrode 5, and the bottom insulating layer 2 are sequentially stacked on the top surface of the base layer 1. This structure polarizes the piezoelectric material, causing it to displace, driving the sensing structure to vibrate in space, and thus sensing the magnitude of the electric field.

[0005] However, the above-mentioned piezoelectric electrode assembly has the following defects:

[0006] 1. Since part of the piezoelectric material layer is exposed to the electric field, the measured electric field is easily interfered by the piezoelectric drive signal;

[0007] 2. The piezoelectric driving signal is an AC signal, and its frequency is the same as the induction signal frequency of the electric field sensor, which causes strong interference. Summary of the Invention

[0008] In response to the shortcomings of the above problems, the present invention provides a piezoelectric drive electrode assembly, processing method and MEMS electric field sensor that can not only prevent the measured electric field from being interfered with by the piezoelectric drive signal, but also prevent the frequency of the piezoelectric drive signal from interfering with the induced signal frequency of the electric field sensor due to being the same as the frequency of the induced signal of the electric field sensor.

[0009] To achieve the above objectives, in a first aspect, the present invention provides a piezoelectric driving electrode assembly, comprising a base layer, a bottom insulating layer, and a piezoelectric electrode, wherein the piezoelectric electrode and the bottom insulating layer are sequentially superimposed on the base layer, and the piezoelectric electrode comprises an upper metal electrode, a piezoelectric material layer, and a lower metal electrode stacked in sequence, and further comprises an upper shielding electrode and a lower shielding electrode, wherein:

[0010] At least a portion of the upper shielding electrode is located above the upper metal electrode and at least blocks a portion of the top end surface of the upper metal electrode;

[0011] The lower shielding electrode is located on the first side and / or the second side of the piezoelectric electrode and covers a portion of the top end surface of the bottom insulating layer.

[0012] In one embodiment, the invention further comprises a top insulating layer, wherein:

[0013] The top insulating layer is wrapped around the outside of the upper metal electrode and the piezoelectric material layer to form a packaging structure with the lower metal electrode, or the top insulating layer is wrapped around the outside of the upper metal electrode, the piezoelectric material layer and the lower metal electrode to form a packaging structure with the bottom insulating layer.

[0014] In one embodiment, the upper shielding electrode is located outside the top insulating layer, covering a portion of the top end surface of the top insulating layer, or the upper shielding electrode wraps the top end surface of the top insulating layer and at least a portion of the outer wall.

[0015] In a second aspect, the present invention provides a piezoelectric drive electrode assembly, comprising a base layer, a bottom insulating layer, at least one first piezoelectric electrode, and at least one second piezoelectric electrode, wherein the first piezoelectric electrode and the second piezoelectric electrode are spaced apart and are both superimposed on the base layer through the bottom insulating layer, the first piezoelectric electrode comprises a first upper metal electrode, a first piezoelectric material layer, and a first lower metal electrode stacked in sequence, the second piezoelectric electrode comprises a second upper metal electrode, a second piezoelectric material layer, and a second lower metal electrode stacked in sequence, and further comprises at least one first upper shielding electrode, at least one second upper shielding electrode, and a plurality of lower shielding electrodes, wherein:

[0016] At least a portion of the first upper shielding electrode is located above the first upper metal electrode and at least blocks a portion of the top end surface of the first upper metal electrode;

[0017] At least a portion of the second upper shielding electrode is located above the second upper metal electrode and at least blocks a portion of the top end surface of the second upper metal electrode;

[0018] The lower shielding electrode is respectively located on the first side of the first piezoelectric electrode, the first side of the second piezoelectric electrode, and between the first piezoelectric electrode and the second piezoelectric electrode, wherein the lower shielding electrode covers a portion of the top end surface of the bottom insulating layer.

[0019] In one embodiment, the invention further comprises at least one first top insulating layer and at least one second top insulating layer, wherein:

[0020] The first top insulating layer is wrapped around the outside of the first upper metal electrode and the first piezoelectric material layer, and forms a first packaging structure with the first lower metal electrode, or the first top insulating layer is wrapped around the outside of the first upper metal electrode, the first piezoelectric material layer and the first lower metal electrode, and forms a first packaging structure with the bottom insulating layer;

[0021] The second top insulating layer is wrapped around the outside of the second upper metal electrode and the second piezoelectric material layer, forming a second packaging structure with the second lower metal electrode, or the second top insulating layer is wrapped around the outside of the second upper metal electrode, the second piezoelectric material layer and the second lower metal electrode, forming a second packaging structure with the bottom insulating layer.

[0022] In one embodiment, the first upper end shielding electrode is located outside the first top end insulating layer and covers a portion of the top end surface of the first top end insulating layer, or the first upper end shielding electrode wraps around the top end surface and at least a portion of the outer peripheral wall surface of the first top end insulating layer;

[0023] The second upper end shielding electrode is located outside the second top insulating layer and covers a portion of the top end surface of the second top insulating layer, or the second upper end shielding electrode wraps the top end surface and at least a portion of the outer peripheral wall surface of the second top insulating layer.

[0024] In a third aspect, the present invention provides a piezoelectric drive electrode assembly, comprising a base layer, a bottom insulating layer, a lower metal electrode, at least one first piezoelectric electrode, and at least one second piezoelectric electrode, wherein the first piezoelectric electrode and the second piezoelectric electrode are spaced apart and are both sequentially superimposed on the base layer through the lower metal electrode and the bottom insulating layer, the first piezoelectric electrode comprising a first upper metal electrode and a first piezoelectric material layer stacked in sequence, and the second piezoelectric electrode comprising a second upper metal electrode and a second piezoelectric material layer stacked in sequence, characterized in that it further comprises at least one first upper shielding electrode, at least one second upper shielding electrode, and a plurality of lower shielding electrodes, wherein:

[0025] At least a portion of the first upper shielding electrode is located above the first upper metal electrode and at least blocks a portion of the top end surface of the first upper metal electrode;

[0026] At least a portion of the second upper shielding electrode is located above the second upper metal electrode and at least blocks a portion of the top end surface of the second upper metal electrode;

[0027] The lower shielding electrodes are respectively located on a first side of the first piezoelectric electrode and a first side of the second piezoelectric electrode, wherein the lower shielding electrodes cover a portion of a top end surface of the bottom insulating layer.

[0028] In one embodiment, the invention further comprises at least one first top insulating layer and at least one second top insulating layer, wherein:

[0029] The first top insulating layer is wrapped around the outside of the first upper metal electrode and the first piezoelectric material layer, and forms a first packaging structure with a portion of the lower metal electrode;

[0030] The second top insulating layer is wrapped around the outer sides of the second upper metal electrode and the second piezoelectric material layer, and forms a second packaging structure with a portion of the lower metal electrode.

[0031] In one embodiment, the first upper end shielding electrode is located outside the first top end insulating layer and covers a portion of the top end surface of the first top end insulating layer, or the first upper end shielding electrode wraps around the top end surface and at least a portion of the outer peripheral wall surface of the first top end insulating layer;

[0032] The second upper end shielding electrode is located outside the second top insulating layer and covers a portion of the top end surface of the second top insulating layer, or the second upper end shielding electrode wraps the top end surface and at least a portion of the outer peripheral wall surface of the second top insulating layer.

[0033] In a fourth aspect, the present invention provides a processing method for processing the above-mentioned piezoelectric drive electrode assembly, comprising the following steps:

[0034] S1, using a double-sided polished SOI wafer as the base layer;

[0035] S2. thermally oxidizing the wafer to form a bottom insulating layer on the upper surface of the wafer;

[0036] S3, after metal deposition, the lower metal electrode, the piezoelectric material layer and the upper metal electrode are sequentially stacked on the bottom insulating layer;

[0037] S4, etching the upper metal electrode so that the upper metal electrode covers at least a portion of the top end surface of the piezoelectric material layer;

[0038] S5. Etching the piezoelectric material layer so that the piezoelectric material layer covers at least a portion of the top end surface of the lower metal electrode;

[0039] S6. Etching the lower metal electrode so that the lower metal electrode covers at least a portion of the top end surface of the bottom insulating layer;

[0040] S7, depositing a top insulating layer so that the top insulating layer at least covers the lower metal electrode, the piezoelectric material layer, and the upper metal electrode;

[0041] S8, etching the top insulating layer so that the top insulating layer at least covers the metal electrode and the piezoelectric material layer;

[0042] S9. Depositing and etching the shielding electrode to form an upper shielding electrode covering at least a portion of the top end surface of the top insulating layer, and at least one lower shielding electrode covering a portion of the top end surface of the bottom insulating layer and located on one side of the piezoelectric electrode.

[0043] In a fifth aspect, the present invention provides a MEMS electric field sensor comprising the above-mentioned piezoelectric drive electrode assembly.

[0044] Compared with the prior art, the present invention has one of the following advantages:

[0045] By adding upper and lower shielding electrodes, not only can the piezoelectric drive signal be effectively shielded to prevent the measured electric field from being interfered with by the piezoelectric drive signal, but also the frequency of the piezoelectric drive signal can be prevented from interfering with the induced signal frequency of the electric field sensor due to being the same as the frequency of the piezoelectric drive signal.

[0046] By adding a top insulating layer, the top insulating layer and the lower metal electrode or the bottom insulating layer together form a packaging structure of the piezoelectric material layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 is a cross-sectional view of a conventional piezoelectric drive electrode assembly;

[0048] Figure 2 is a cross-sectional view of a first embodiment of a piezoelectric drive electrode assembly according to the present invention;

[0049] Figure 3 is a cross-sectional view of a second embodiment of a piezoelectric drive electrode assembly according to the present invention;

[0050] Figure 4 is a cross-sectional view of a third embodiment of a piezoelectric drive electrode assembly according to the present invention;

[0051] Figure 5 is a cross-sectional view of a fourth embodiment of a piezoelectric drive electrode assembly according to the present invention;

[0052] Figure 6 is a cross-sectional view of a fifth embodiment of a piezoelectric drive electrode assembly according to the present invention;

[0053] Figure 7 is a cross-sectional view of a sixth embodiment of a piezoelectric drive electrode assembly according to the present invention;

[0054] Figure 8 is a cross-sectional view of a seventh embodiment of a piezoelectric drive electrode assembly according to the present invention;

[0055] Figure 9 is a cross-sectional view of an eighth embodiment of a piezoelectric drive electrode assembly according to the present invention;

[0056] Figure 10 is a cross-sectional view of a ninth embodiment of a piezoelectric drive electrode assembly according to the present invention;

[0057] Figure 11 Schematic diagram of the MEMS electric field sensor in the present invention.

[0058] The main reference numerals are as follows:

[0059] 1-base layer; 2-bottom insulating layer; 3-lower metal electrode; 4-piezoelectric material layer; 5-upper metal electrode;

[0060] 6-transmission line; 7-top insulating layer; 8-upper shielding electrode; 9-lower shielding electrode; 10-first piezoelectric material layer; 11-first upper metal electrode; 12-first top insulating layer; 13-first lower metal electrode; 14-first upper shielding electrode; 15-second upper shielding electrode; 16-second lower metal electrode; 17-second piezoelectric material layer; 18-second upper metal electrode; 19-second top insulating layer; 20-MEMS electric field sensor; 21-substrate; 211-physical area; 212-charge sensing area; 22-dynamic sensing electrode; 221-first Sensing electrode; 222-first piezoelectric component a; 223-second piezoelectric component a; 223-first extraction electrode; 225-first extended electrode a; 226-second extended electrode a; 227-first lower end shielding electrode a; 228-second lower end shielding electrode a; 23-static sensing electrode; 231-second sensing electrode; 232-first piezoelectric component b; 233-second piezoelectric component b; 234-second extraction electrode; 235-first extended electrode b; 236-second extended electrode b; 237-first lower end shielding electrode b; 238-second lower end shielding electrode b. DETAILED DESCRIPTION

[0061] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0062] In the description of the present invention, it should be understood that the terms "upper", "lower", "top surface", "bottom surface", "inside", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. It should be noted that when a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be a centrally arranged component at the same time. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0063] Example 1

[0064] like Figure 2 As shown, this embodiment provides a piezoelectric driving electrode assembly, including a base layer 1, a bottom insulating layer 2, a piezoelectric electrode and a lower shielding electrode 9. The piezoelectric electrode and the bottom insulating layer 2 are superimposed on the base layer 1 in sequence, and the lower shielding electrode 9 covers a portion of the top end surface of the bottom insulating layer 2 and is respectively located on the first side of the piezoelectric electrode.

[0065] Furthermore, the piezoelectric electrode includes an upper metal electrode 5, a piezoelectric material layer 4, a lower metal electrode 3, a top insulating layer 7 and an upper shielding electrode 8, wherein the upper metal electrode 5, the piezoelectric material layer 4 and the lower metal electrode 3 are stacked in sequence, and the top insulating layer 7 is wrapped around the outer side of the upper metal electrode 5, the piezoelectric material layer 4 and the lower metal electrode 3, forming a packaging structure that wraps the upper metal electrode 5 and the piezoelectric material layer 4 with the lower metal electrode 3, and the upper shielding electrode 8 covers a part of the top end surface of the top insulating layer 7, thereby being located directly above the upper metal electrode 5, the piezoelectric material layer 4 and the lower metal electrode 3.

[0066] Furthermore, the width of the upper metal electrode 5 is successively smaller than the width of the piezoelectric material layer 4, the width of the lower metal electrode 3, the width of the bottom insulating layer 2 and the width of the base layer 1, so that the edge portions on both sides of the upper metal electrode 5, the piezoelectric material layer 4, the lower metal electrode 3, the bottom insulating layer 2 and the base layer 1 form a stepped structure. When the top insulating layer 7 is wrapped around the outside of the upper metal electrode 5, the piezoelectric material layer 4 and the lower metal electrode 3, and the upper shielding electrode is covered on the outside of the top insulating layer 7, the edge portions on both sides of the upper shielding electrode 8 and the edge portions on both sides of the top insulating layer 7 also form a stepped structure.

[0067] Since the top insulating layer 7 is wrapped around the outside of the upper metal electrode 5, the piezoelectric material layer 4 and the lower metal electrode 3, and the bottom insulating layer 2 covers the bottom end surface of the lower metal electrode 3, the top insulating layer 7 and the lower metal electrode 3 form a packaging structure of the upper metal electrode 5 and the piezoelectric material layer 4, so that the piezoelectric material layer 4 cannot be exposed to the current electric field, thereby avoiding the situation where the piezoelectric material layer 4 induces charges in the current electric field, and will not affect the driving effect of the piezoelectric drive electrode assembly.

[0068] Furthermore, the lower shielding electrode 9 is located adjacent to the first sidewall of the top insulating layer 7 , its top end faces the upper position of the upper shielding electrode 8 , and its bottom end covers a portion of the top end of the bottom insulating layer 2 .

[0069] In this embodiment, the upper shielding electrode is combined with the lower shielding electrode, which can not only effectively shield the piezoelectric drive signal to prevent the measured electric field from being interfered with by the piezoelectric drive signal, but also prevent the frequency of the piezoelectric drive signal from interfering with the induction signal frequency of the electric field sensor.

[0070] Example 2

[0071] like Figure 3 As shown, this embodiment provides a piezoelectric driving electrode assembly. The difference between this embodiment and the first embodiment is that:

[0072] The piezoelectric driving electrode assembly provided in this embodiment includes a base layer 1, a bottom insulating layer 2, a piezoelectric electrode and two lower shielding electrodes 9. The piezoelectric electrode and the bottom insulating layer 2 are superimposed on the base layer 1 in sequence. The two lower shielding electrodes 9 are both part of the top end surface covering the bottom insulating layer 2, and are respectively located on the first side and the second side of the piezoelectric electrode.

[0073] Furthermore, the first lower shielding electrode 9 is located adjacent to the first sidewall surface of the top insulating layer 7 , and the second lower shielding electrode 9 is located adjacent to the second sidewall surface of the top insulating layer 7 .

[0074] In this embodiment, the upper shielding electrode is combined with the two lower shielding electrodes, which can not only effectively shield the piezoelectric drive signal to prevent the measured electric field from being interfered with by the piezoelectric drive signal, but also prevent the frequency of the piezoelectric drive signal from interfering with the induction signal frequency of the electric field sensor due to being the same as the frequency of the electric field sensor.

[0075] Example 3

[0076] like Figure 4 As shown, this embodiment provides a piezoelectric driving electrode assembly. The difference between this embodiment and the second embodiment is that:

[0077] The top insulating layer 7 is wrapped around the outside of the upper metal electrode 5 and the piezoelectric material layer 4. The upper shielding electrode 8 is wrapped around the outside of the top insulating layer 7 and respectively covers the top end surface and the peripheral wall surface of the top insulating layer 7. The bottom end surface of the top insulating layer 7 and the bottom end surface of the upper shielding electrode 8 both cover a portion of the top end surface of the lower metal electrode 3.

[0078] Since the top insulating layer 7 is wrapped around the outside of the upper metal electrode 5 and the piezoelectric material layer 4, and the lower metal electrode 3 covers the bottom end face of the piezoelectric material layer 4, the top insulating layer 7 and the lower metal electrode 3 form a packaging structure of the upper metal electrode 5 and the piezoelectric material layer 4, so that the piezoelectric material layer 4 cannot be exposed to the current electric field.

[0079] Furthermore, the first lower shielding electrode 9 is located adjacent to the first sidewall surface of the lower metal electrode 3 , and the second lower shielding electrode 9 is located adjacent to the second sidewall surface of the lower metal electrode 3 .

[0080] Example 4

[0081] like Figure 5 As shown, this embodiment provides a piezoelectric driving electrode assembly, including a base layer 1, a bottom insulating layer 2, a first piezoelectric electrode, a second piezoelectric electrode, and three bottom shielding electrodes 9. The first piezoelectric electrode and the second piezoelectric electrode are spaced apart and are both superimposed on the base layer 1 through the bottom insulating layer 2. The three bottom shielding electrodes 9 each cover a portion of the top end surface of the bottom insulating layer 2 and are respectively located on the first side of the first piezoelectric electrode, the first side of the second piezoelectric electrode, and between the first piezoelectric electrode and the second piezoelectric electrode.

[0082] Furthermore, the first piezoelectric electrode includes a first upper metal electrode 11, a first piezoelectric material layer 10, a first lower metal electrode 13, a first top insulating layer 12 and a first upper shielding electrode 14, wherein the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 13 are stacked in sequence, the first top insulating layer 12 is wrapped around the outside of the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 13, the bottom end surface of the first top insulating layer 12 covers a part of the top end surface of the bottom insulating layer 2, and forms a first packaging structure that wraps the first upper metal electrode 11 and the first piezoelectric material layer 10 with the first lower metal electrode 13, and the first upper shielding electrode 14 covers a part of the top end surface of the first top insulating layer 12, thereby being located directly above the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 13.

[0083] Furthermore, the width of the first upper metal electrode 11 is successively smaller than the width of the first piezoelectric material layer 10, the width of the first lower metal electrode 13, the width of the bottom insulating layer 2 and the width of the base layer 1, so that the edge portions on both sides of the first upper metal electrode 11, the first piezoelectric material layer 10, the first lower metal electrode 13, the bottom insulating layer 2 and the base layer 1 form a stepped structure. When the first top insulating layer 12 is wrapped around the outside of the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 13, and the first upper shielding electrode 14 covers the outside of the first top insulating layer 12, the edge portions on both sides of the first upper shielding electrode and the edge portions on both sides of the first top insulating layer 12 also form a stepped structure.

[0084] Furthermore, the second piezoelectric electrode includes a second upper metal electrode 18, a second piezoelectric material layer 17, a second lower metal electrode 16, a second top insulating layer 19 and a second upper shielding electrode 15, wherein the second upper metal electrode 18, the second piezoelectric material layer 17 and the second lower metal electrode 16 are stacked in sequence, the second top insulating layer 19 is wrapped around the outside of the second upper metal electrode 18, the second piezoelectric material layer 17 and the second lower metal electrode 16, the bottom end surface of the second top insulating layer 19 covers a part of the top end surface of the bottom insulating layer 2, and forms a second packaging structure that wraps the second upper metal electrode 18 and the second piezoelectric material layer 17 with the second lower metal electrode 16, and the second upper shielding electrode 15 covers a part of the top end surface of the second top insulating layer 19, thereby being located directly above the second upper metal electrode 18, the second piezoelectric material layer 17 and the second lower metal electrode 16.

[0085] Furthermore, the width of the second upper metal electrode 18 is successively smaller than the width of the second piezoelectric material layer 17, the width of the second lower metal electrode 16, the width of the bottom insulating layer 2 and the width of the base layer 1, so that the edge portions on both sides of the second upper metal electrode 18, the second piezoelectric material layer 17, the second lower metal electrode 16, the bottom insulating layer 2 and the base layer 1 form a stepped structure. When the second top insulating layer 19 is wrapped around the outside of the second upper metal electrode 18, the second piezoelectric material layer 17 and the second lower metal electrode 16, and the second upper shielding electrode is covered on the outside of the second top insulating layer 19, the edge portions on both sides of the second upper shielding electrode and the edge portions on both sides of the second top insulating layer 19 also form a stepped structure.

[0086] Furthermore, the position of the first lower end shielding electrode 9 is adjacent to the first side wall surface of the first top insulating layer 12, the position of the second lower end shielding electrode 9 is adjacent to the second side wall surface of the first top insulating layer 12 and the second side wall surface of the second top insulating layer 19 respectively, and the position of the third lower end shielding electrode 9 is adjacent to the first side wall surface of the second top insulating layer 19.

[0087] In this embodiment, the first upper shielding electrode, the second upper shielding electrode and the three lower shielding electrodes are combined, which can not only effectively shield the piezoelectric drive signal to prevent the measured electric field from being interfered with by the piezoelectric drive signal, but also prevent the frequency of the piezoelectric drive signal from interfering with the induction signal frequency of the electric field sensor.

[0088] Example 5

[0089] like Figure 6 As shown, this embodiment provides a piezoelectric driving electrode assembly. The difference between this embodiment and the fourth embodiment is that:

[0090] In the first piezoelectric electrode, the first top insulating layer 12 is wrapped around the outside of the first upper metal electrode 11 and the first piezoelectric material layer 10, the bottom end surface of the first top insulating layer 12 covers a portion of the top end surface of the first lower metal electrode 13, and the first upper shielding electrode 14 covers a portion of the top end surface of the first top insulating layer 12, thereby being located directly above the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 13.

[0091] In the second piezoelectric electrode, the second top insulating layer 19 is wrapped around the outside of the second upper metal electrode 18 and the second piezoelectric material layer 17, the bottom end surface of the second top insulating layer 19 covers a part of the top end surface of the second lower metal electrode 16, and the second upper shielding electrode 15 covers a part of the top end surface of the second top insulating layer 19, thereby being located directly above the second upper metal electrode 18, the second piezoelectric material layer 17 and the second lower metal electrode 16.

[0092] Furthermore, the position of the first lower shielding electrode 9 is adjacent to the first side wall surface of the first lower metal electrode 13, the position of the second lower shielding electrode 9 is adjacent to the second side wall surface of the first lower metal electrode 13 and the second side wall surface of the second lower metal electrode 16, respectively, and the position of the third lower shielding electrode 9 is adjacent to the first side wall surface of the second lower metal electrode 16.

[0093] Example 6

[0094] like Figure 7 As shown, this embodiment provides a piezoelectric driving electrode assembly. The difference between this embodiment and the fifth embodiment is that:

[0095] In the first piezoelectric electrode, the first top insulating layer 12 wraps around the outside of the first upper metal electrode 11 and the first piezoelectric material layer 10. The first top shielding electrode 14 wraps around the outside of the first top insulating layer 12 and covers the top end surface and the outer peripheral wall surface of the first top insulating layer 12. The bottom end surface of the first top insulating layer 12 and the bottom end surface of the first top shielding electrode 14 both cover a portion of the top end surface of the first lower metal electrode 13.

[0096] In the second piezoelectric electrode, the second top insulating layer 19 wraps around the outside of the second upper metal electrode 18 and the second piezoelectric material layer 17. The second top shielding electrode 15 wraps around the outside of the second top insulating layer 19 and covers the top end surface and the peripheral wall surface of the second top insulating layer 19. The bottom end surface of the second top insulating layer 19 and the bottom end surface of the second top shielding electrode 15 both cover a portion of the top end surface of the second lower metal electrode 16.

[0097] Example 7

[0098] like Figure 8 As shown, this embodiment provides a piezoelectric driving electrode assembly. The difference between this embodiment and the sixth embodiment is that:

[0099] In the first piezoelectric electrode, the first top insulating layer 12 wraps around the outside of the first upper metal electrode 11, the first piezoelectric material layer 10, and the first lower metal electrode 13. The first upper shielding electrode 14 wraps around the outside of the first top insulating layer 12 and covers the top end surface and a portion of the outer peripheral wall surface of the first top insulating layer 12. The bottom end surface of the first top insulating layer 12 covers a portion of the top end surface of the bottom insulating layer 2.

[0100] In the second piezoelectric electrode, the second top insulating layer 19 wraps around the outside of the second upper metal electrode 18, the second piezoelectric material layer 17, and the second lower metal electrode 16. The second top shielding electrode 15 wraps around the outside of the second top insulating layer 19 and covers the top end surface and a portion of the outer peripheral wall surface of the second top insulating layer 19. The bottom end surface of the second top insulating layer 19 covers a portion of the top end surface of the bottom insulating layer 2.

[0101] The first lower end shielding electrode 9 is positioned adjacent to the first side wall surface of the first top insulating layer 12, the second lower end shielding electrode 9 is positioned adjacent to the second side wall surface of the first top insulating layer 12 and the second side wall surface of the second top insulating layer 19 respectively, and the third lower end shielding electrode 9 is positioned adjacent to the first side wall surface of the second top insulating layer 19.

[0102] Example 8

[0103] like Figure 9 As shown, this embodiment provides a piezoelectric driving electrode assembly, including a base layer 1, a bottom insulating layer 2, a lower metal electrode 3, a first piezoelectric electrode, a second piezoelectric electrode, and two lower shielding electrodes 9. The first piezoelectric electrode and the second piezoelectric electrode are spaced apart and are both superimposed on the base layer 1 through the lower metal electrode 3 and the bottom insulating layer 2 in sequence. The two lower shielding electrodes 9 both cover a portion of the top end surface of the bottom insulating layer 2 and are located on the first side of the first piezoelectric electrode and the first side of the second piezoelectric electrode, respectively.

[0104] The first piezoelectric electrode includes a first upper metal electrode 11, a first piezoelectric material layer 10, a first top insulating layer 12 and a first upper shielding electrode 14, wherein the first upper metal electrode 11 and the first piezoelectric material layer 10 are superimposed, the first piezoelectric material layer 10 covers a portion of the top end surface of the lower metal electrode 3, the first top insulating layer 12 is wrapped around the outside of the first upper metal electrode 11 and the first piezoelectric material layer 10, the bottom end surface of the first top insulating layer 12 covers a portion of the top end surface of the lower metal electrode 3, and forms a first packaging structure that wraps the first upper metal electrode 11 and the first piezoelectric material layer 10 with a portion of the lower metal electrode 3, and the first upper shielding electrode 14 covers a portion of the top end surface of the first top insulating layer 12, thereby being located directly above the first upper metal electrode 11 and the first piezoelectric material layer 10.

[0105] The second piezoelectric electrode includes a second upper metal electrode 18, a second piezoelectric material layer 17, a second top insulating layer 19 and a second upper shielding electrode 15, wherein the second upper metal electrode 18 is superimposed on the second piezoelectric material layer 17, the second piezoelectric material layer 17 covers a portion of the top end surface of the lower metal electrode 3, the second top insulating layer 19 is wrapped around the outside of the second upper metal electrode 18 and the second piezoelectric material layer 17, and forms a second packaging structure that wraps the second upper metal electrode 18 and the second piezoelectric material layer 17 with a portion of the lower metal electrode 3, the bottom end surface of the second top insulating layer 19 covers a portion of the top end surface of the lower metal electrode 3, and the second upper shielding electrode 15 covers a portion of the top end surface of the second top insulating layer 19, thereby being located directly above the second upper metal electrode 18 and the second piezoelectric material layer 17.

[0106] Furthermore, the first lower shielding electrode 9 is located adjacent to the first sidewall surface of the lower metal electrode 3 , and the second lower shielding electrode 9 is located adjacent to the second sidewall surface of the lower metal electrode 3 .

[0107] In this embodiment, the first upper shielding electrode, the second upper shielding electrode and the two lower shielding electrodes are combined, which can not only effectively shield the piezoelectric drive signal to prevent the measured electric field from being interfered with by the piezoelectric drive signal, but also prevent the frequency of the piezoelectric drive signal from interfering with the induction signal frequency of the electric field sensor.

[0108] Embodiment 9

[0109] like Figure 10 As shown, this embodiment provides a piezoelectric driving electrode assembly. The difference between this embodiment and the eighth embodiment is that:

[0110] In the first piezoelectric electrode, the first top insulating layer 12 wraps around the outside of the first upper metal electrode 11 and the first piezoelectric material layer 10, and together with a portion of the lower metal electrode 3, forms a first packaging structure that wraps the first upper metal electrode 11 and the first piezoelectric material layer 10. The first upper shielding electrode 14 wraps around the outside of the first top insulating layer 12 and respectively covers the top end surface and the outer peripheral wall surface of the first top insulating layer 12. The bottom end surface of the first top insulating layer 12 and the bottom end surface of the first upper shielding electrode 14 both cover a portion of the top end surface of the lower metal electrode 3.

[0111] In the second piezoelectric electrode, the second top insulating layer 19 wraps around the outside of the second upper metal electrode 18 and the second piezoelectric material layer 17, and together with a portion of the lower metal electrode 3, forms a second packaging structure that wraps the second upper metal electrode 18 and the second piezoelectric material layer 17. The second upper shielding electrode 15 wraps around the outside of the second top insulating layer 19 and respectively covers the top end surface and the outer peripheral wall surface of the second top insulating layer 19. The bottom end surface of the second top insulating layer 19 and the bottom end surface of the second upper shielding electrode 15 both cover a portion of the top end surface of the lower metal electrode 3.

[0112] In addition, in the above-mentioned embodiments 1 to 9, a transmission line is also laid on the top end surface of the base layer.

[0113] In addition, in the above-mentioned first to ninth embodiments, the materials of the top insulating layer and the bottom insulating layer are not limited to silicon dioxide, silicon nitride, and a composite material made of silicon dioxide and silicon nitride.

[0114] The upper and lower metal electrodes, as well as the upper and lower shield electrodes, can be made of metals or alloys such as Ti, Pt, Al, Ag, Cr, Cu, Au, and Mo. The base layer can be made of dielectric materials such as silicon-based materials, glass, ceramics, metals, or organic materials, as well as metals and metal alloys. The piezoelectric material layer can be made of lead zirconate titanate, aluminum nitride, zinc oxide, lead titanate, barium titanate, or modified lead titanate.

[0115] Example 10

[0116] This embodiment provides a processing method for processing the piezoelectric driving electrode assembly in the above-mentioned embodiments 1 to 9, comprising the following steps:

[0117] S1, using a double-sided polished SOI wafer as the base layer;

[0118] S2. thermally oxidizing the wafer to form a bottom insulating layer on the upper surface of the wafer;

[0119] S3, after metal deposition, the lower metal electrode, the piezoelectric material layer and the upper metal electrode are sequentially stacked on the bottom insulating layer;

[0120] S4, etching the upper metal electrode so that the upper metal electrode covers at least a portion of the top end surface of the piezoelectric material layer;

[0121] S5. Etching the piezoelectric material layer so that the piezoelectric material layer covers at least a portion of the top end surface of the lower metal electrode;

[0122] S6. Etching the lower metal electrode so that the lower metal electrode covers at least a portion of the top end surface of the bottom insulating layer;

[0123] S7, depositing a top insulating layer so that the top insulating layer at least covers the lower metal electrode, the piezoelectric material layer, and the upper metal electrode;

[0124] S8, etching the top insulating layer so that the top insulating layer at least covers the metal electrode and the piezoelectric material layer;

[0125] S9. Depositing and etching the shielding electrode to form an upper shielding electrode covering at least a portion of the top end surface of the top insulating layer, and at least one lower shielding electrode covering a portion of the top end surface of the bottom insulating layer and located on one side of the piezoelectric electrode.

[0126] Furthermore, in step S8, after etching the top insulating layer, the top insulating layer is wrapped around the outer sides of the upper metal electrode and the piezoelectric material layer, or the top insulating layer is wrapped around the outer sides of the upper metal electrode, the piezoelectric material layer and the lower metal electrode.

[0127] Further, in step S9, after the shielding electrode is deposited and etched, the upper shielding electrode covers a portion of the top end surface of the top insulating layer, the lower shielding electrode covers a portion of the top end surface of the bottom insulating layer, and is located on one side of the piezoelectric electrode; or, the upper shielding electrode covers the top end surface and the peripheral wall surface of the top insulating layer, the lower shielding electrode covers a portion of the top end surface of the bottom insulating layer, and is located on one side of the piezoelectric electrode.

[0128] In one embodiment, the piezoelectric driving electrode assembly manufactured by the above-mentioned processing method includes a base layer, a bottom insulating layer, a piezoelectric electrode and two lower shielding electrodes, wherein the first lower shielding electrode is located on the first side of the piezoelectric electrode, and the second lower shielding electrode is located on the second side of the piezoelectric electrode.

[0129] In another embodiment, a piezoelectric driving electrode assembly manufactured by the above-mentioned processing method includes a base layer, a bottom insulating layer, a first piezoelectric electrode, a second piezoelectric electrode and two lower shielding electrodes, wherein the first lower shielding electrode is located on the first side of the first piezoelectric electrode, and the second lower shielding electrode is located on the first side of the second piezoelectric electrode.

[0130] In another embodiment, the piezoelectric driving electrode assembly manufactured by the above-mentioned processing method includes a base layer, a bottom insulating layer, a first piezoelectric electrode, a second piezoelectric electrode and three lower shielding electrodes, wherein the first lower shielding electrode is located on the first side of the first piezoelectric electrode, the second lower shielding electrode is located on the first side of the second piezoelectric electrode, and the third lower shielding electrode is located between the first piezoelectric electrode and the second piezoelectric electrode.

[0131] In the above processing method, by adding the steps of depositing a top insulating layer, etching the top insulating layer, and depositing and etching a shielding electrode, the top insulating layer is at least wrapped around the outside of the piezoelectric material layer to form a packaging structure with the lower metal electrode. The upper shielding electrode at least covers the top end surface of the top insulating layer and is located above the piezoelectric material layer. The lower shielding electrode is located on one side of the piezoelectric electrode. It can not only effectively package and protect the piezoelectric material layer, but also effectively shield the generated piezoelectric driving signal to prevent the piezoelectric driving signal from being interfered with by the electric field detection signal and affected by the external environment.

[0132] Example 11

[0133] like Figure 11 As shown, this embodiment provides a MEMS electric field sensor 20, including a substrate 21, a dynamic sensing electrode 22, and a static sensing electrode 23. The dynamic sensing electrode 22 and the static sensing electrode 23 are fixed to the left and right sides of the substrate 21, respectively. Part of the dynamic sensing electrode 22 is attached to the solid region 211, and the other part is located on the charge sensing region 212, for obtaining at least one direct current signal of the current electric field. The static sensing electrode 23 is located on the charge sensing region 212, for obtaining at least one alternating current signal of the current electric field.

[0134] In this embodiment, specifically, the substrate 21 includes a physical region 211 and a charge induction region 212. The charge induction region 212 is formed by recessing a local region of the top end surface of the physical region 211 toward the bottom end surface thereof. The physical region 211 surrounds the charge induction region 212 to form a frame-like structure.

[0135] In this embodiment, specifically, the dynamic sensing electrode 22 includes a sensing electrode component a and a piezoelectric electrode component a. The sensing electrode component a is located above the charge sensing region 212. A portion of the piezoelectric electrode component a is located on the physical region 211, and the other portion is attached to a portion of the sensing electrode component a.

[0136] Furthermore, the sensing electrode assembly a includes a base layer and a first metal electrode attached thereon, wherein the first metal electrode includes a first sensing electrode 221 and a first extension electrode a225 and a second extension electrode a226 respectively connected thereto.

[0137] Furthermore, the piezoelectric electrode assembly a mainly includes a connected piezoelectric electrode a and a first lead-out electrode 224, wherein the piezoelectric electrode a and the first lead-out electrode 224 are both part of the top end surface covering the physical area 211, the first extension electrode a225 and the second extension electrode a226 are both connected to the piezoelectric electrode a, and at the same time, the first extension electrode a225 and the second extension electrode a226 are both connected to the first lead-out electrode 224.

[0138] The piezoelectric electrode a includes a first piezoelectric electrode and a second piezoelectric electrode. Optionally, the first piezoelectric electrode and the second piezoelectric electrode can both be the piezoelectric driving electrode assemblies described in Examples 1 to 3, or the piezoelectric electrode a can also be the piezoelectric driving electrode assemblies described in Examples 4 to 9.

[0139] Preferably, the first piezoelectric electrode and the second piezoelectric electrode are both piezoelectric drive electrode assemblies described in Example 1. The first piezoelectric electrode includes a first piezoelectric component a222 and a first lower shielding electrode a, the first piezoelectric component a222 is connected to a first extended electrode a225, and the second piezoelectric electrode includes a second piezoelectric component a223 and a second lower shielding electrode a, the second piezoelectric component a223 is connected to a second extended electrode a226, wherein the base layer in the first piezoelectric component a222 and the base layer in the second piezoelectric component a223 are connected, covering a portion of the top end surface of the solid region 211, and are both connected to the substrate layer. The first extraction electrode 224 covers a portion of the base layer in the second piezoelectric component a223 and is connected to the first piezoelectric component a222 and the second piezoelectric component a223.

[0140] Furthermore, the external control circuit board is respectively connected to the first piezoelectric component a222, the second piezoelectric component a223 and the first lead-out electrode 224, and inputs an excitation signal to the first piezoelectric component a222 and the second piezoelectric component a223 to drive the first piezoelectric component a222 and the second piezoelectric component a223 to vibrate, and inputs the vibration signal output by the first piezoelectric component a222 and the second piezoelectric component a223 to the external control circuit board through the first lead-out electrode 224, thereby converting the DC current signal (i.e., the vibration signal) into a corresponding DC voltage value.

[0141] In this embodiment, specifically, the static sensing electrode 23 includes a sensing electrode component b and a piezoelectric electrode component b. The sensing electrode component b is located above the charge sensing region 212. A portion of the piezoelectric electrode component b is located on the solid region 211, and the other portion is attached to a portion of the sensing electrode component b.

[0142] Furthermore, the sensing electrode assembly b includes a base layer and a second metal electrode attached thereon, wherein the second metal electrode includes a second sensing electrode 231 and a first extension electrode b235 and a second extension electrode b236 respectively connected thereto.

[0143] Furthermore, the piezoelectric electrode assembly b mainly includes a connected piezoelectric electrode b and a second lead-out electrode 234, wherein the piezoelectric electrode b and the second lead-out electrode 234 are both part of the top end surface covering the physical area 211, and the first extension electrode b235 and the second extension electrode b236 are both connected to the piezoelectric electrode b. At the same time, the first extension electrode b235 and the second extension electrode b236 are also both connected to the second lead-out electrode 234.

[0144] The piezoelectric electrode b includes a first piezoelectric electrode and a second piezoelectric electrode. Optionally, the first piezoelectric electrode and the second piezoelectric electrode can both be the piezoelectric driving electrode assemblies described in Examples 1 to 3, or the piezoelectric electrode b can also be the piezoelectric driving electrode assemblies described in Examples 4 to 9.

[0145] Preferably, the first piezoelectric electrode and the second piezoelectric electrode are both the piezoelectric drive electrode assemblies described in Example 1. The first piezoelectric electrode includes a first piezoelectric component b232 and a first lower end shielding electrode b, and the second piezoelectric electrode includes a second piezoelectric component b233 and a second lower end shielding electrode b. The base layer in the first piezoelectric component b232 and the base layer in the second piezoelectric component b233 are connected, covering a portion of the top end surface of the solid region 211, and are both connected to the substrate layer. The second extraction electrode covers a portion of the base layer in the second piezoelectric component b233 and is connected to the first piezoelectric component b232 and the second piezoelectric component b233.

[0146] When sensing an AC current signal, because the second metal electrode is located above the charge sensing region 212, when the current electric field undergoes a dramatic change, the second sensing electrode 231 not only senses the charge in the current electric field but also, under the influence of the current electric field, reciprocates up and down between above and within the charge sensing region 212. After sensing the charge in the current electric field, the second sensing electrode 231 transmits the AC current signal to the connected second extraction electrode 234 via the first extension electrode b235 and the second extension electrode b236. The second extraction electrode 234 then transmits the AC current signal to the connected external control circuit board, thereby converting the AC current signal into a corresponding AC voltage value.

[0147] In addition, since the dynamic induction electrodes 22 and the static induction electrodes 23 have the same structure, they can be switched as needed.

[0148] Exemplarily, when sensing a direct current signal, the sensing electrode assembly a in the dynamic sensing electrode 22 does not sense the charge in the electric field. The direct current signal is obtained by converting the vibration generated by the piezoelectric electrode assembly a according to the excitation signal, and the direct current signal is input to the external control circuit board connected thereto through the first lead-out electrode 224. When sensing an alternating current signal, the sensing electrode assembly b in the static sensing electrode 23 obtains the charge in the current electric field and inputs the alternating current signal to the external control circuit board connected thereto through the second lead-out electrode 234. When the piezoelectric electrode assembly a in the dynamic sensing electrode 22 or the sensing electrode assembly b in the static sensing electrode 23 is damaged, since the dynamic sensing electrode 22 and the static sensing electrode 23 have the same structure and working principle, the dynamic sensing electrode 22 and the static sensing electrode 23 can be switched, so that the direct current signal is generated by the piezoelectric electrode assembly b in the static sensing electrode 23 according to the excitation signal, and the alternating current signal is generated by the charge induced by the sensing electrode assembly a in the current electric field, thereby achieving switching between the dynamic sensing electrode 22 and the static sensing electrode 23.

[0149] The above description is merely a preferred embodiment of the present invention and is intended to be illustrative rather than restrictive of the present invention. Those skilled in the art will appreciate that many changes, modifications, and even equivalents may be made to the present invention within the spirit and scope of the claims, all of which fall within the scope of protection of the present invention.

Claims

1. A piezoelectric driving electrode assembly, comprising a base layer, a bottom insulating layer, and a piezoelectric electrode, wherein the piezoelectric electrode and the bottom insulating layer are sequentially stacked on the base layer, and the piezoelectric electrode comprises an upper metal electrode, a piezoelectric material layer, and a lower metal electrode stacked sequentially, characterized in that: It also includes an upper shielding electrode and a lower shielding electrode, wherein: At least a portion of the upper shielding electrode is located above the upper metal electrode and at least blocks a portion of the top end surface of the upper metal electrode; The lower shielding electrode is located on the first side and / or the second side of the piezoelectric electrode and covers a portion of the top end surface of the bottom insulating layer; Also included is a top insulating layer, wherein: The top insulating layer is wrapped around the outside of the upper metal electrode and the piezoelectric material layer to form a packaging structure with the lower metal electrode, or the top insulating layer is wrapped around the outside of the upper metal electrode, the piezoelectric material layer and the lower metal electrode to form a packaging structure with the bottom insulating layer.

2. The piezoelectric driving electrode assembly according to claim 1, wherein: The upper shielding electrode is located outside the top insulating layer and covers a portion of the top end surface of the top insulating layer, or the upper shielding electrode wraps the top end surface and at least a portion of the outer peripheral wall of the top insulating layer.

3. A piezoelectric drive electrode assembly, comprising a base layer, a bottom insulating layer, at least one first piezoelectric electrode, and at least one second piezoelectric electrode, wherein the first piezoelectric electrode and the second piezoelectric electrode are spaced apart and are both superimposed on the base layer via the bottom insulating layer, the first piezoelectric electrode comprising a first upper metal electrode, a first piezoelectric material layer, and a first lower metal electrode stacked in sequence, and the second piezoelectric electrode comprising a second upper metal electrode, a second piezoelectric material layer, and a second lower metal electrode stacked in sequence, characterized in that: It also includes at least one first upper shielding electrode, at least one second upper shielding electrode and a plurality of lower shielding electrodes, wherein: At least a portion of the first upper shielding electrode is located above the first upper metal electrode and at least blocks a portion of the top end surface of the first upper metal electrode; At least a portion of the second upper shielding electrode is located above the second upper metal electrode and at least blocks a portion of the top end surface of the second upper metal electrode; The lower end shielding electrode is respectively located on the first side of the first piezoelectric electrode, the first side of the second piezoelectric electrode, and between the first piezoelectric electrode and the second piezoelectric electrode, wherein the lower end shielding electrode covers a portion of the top end surface of the bottom end insulating layer; Also included are at least one first top insulating layer and at least one second top insulating layer, wherein: The first top insulating layer is wrapped around the outside of the first upper metal electrode and the first piezoelectric material layer, and forms a first packaging structure with the first lower metal electrode, or the first top insulating layer is wrapped around the outside of the first upper metal electrode, the first piezoelectric material layer and the first lower metal electrode, and forms a first packaging structure with the bottom insulating layer; The second top insulating layer is wrapped around the outside of the second upper metal electrode and the second piezoelectric material layer, forming a second packaging structure with the second lower metal electrode, or the second top insulating layer is wrapped around the outside of the second upper metal electrode, the second piezoelectric material layer and the second lower metal electrode, forming a second packaging structure with the bottom insulating layer.

4. The piezoelectric driving electrode assembly according to claim 3, characterized in that: The first upper end shielding electrode is located outside the first top end insulating layer and covers a portion of the top end surface of the first top end insulating layer, or the first upper end shielding electrode wraps around the top end surface and at least a portion of the outer peripheral wall surface of the first top end insulating layer; The second upper end shielding electrode is located outside the second top insulating layer and covers a portion of the top end surface of the second top insulating layer, or the second upper end shielding electrode wraps the top end surface and at least a portion of the outer peripheral wall surface of the second top insulating layer.

5. A piezoelectric drive electrode assembly, comprising a base layer, a bottom insulating layer, a lower metal electrode, at least one first piezoelectric electrode, and at least one second piezoelectric electrode, wherein the first piezoelectric electrode and the second piezoelectric electrode are spaced apart and are both sequentially superimposed on the base layer via the lower metal electrode and the bottom insulating layer, the first piezoelectric electrode comprising a first upper metal electrode and a first piezoelectric material layer stacked in sequence, and the second piezoelectric electrode comprising a second upper metal electrode and a second piezoelectric material layer stacked in sequence, characterized in that: It also includes at least one first upper shielding electrode, at least one second upper shielding electrode and a plurality of lower shielding electrodes, wherein: At least a portion of the first upper shielding electrode is located above the first upper metal electrode and at least blocks a portion of the top end surface of the first upper metal electrode; At least a portion of the second upper shielding electrode is located above the second upper metal electrode and at least blocks a portion of the top end surface of the second upper metal electrode; The lower shielding electrodes are respectively located on a first side of the first piezoelectric electrode and a first side of the second piezoelectric electrode, wherein the lower shielding electrodes cover a portion of a top end surface of the bottom insulating layer; Also included are at least one first top insulating layer and at least one second top insulating layer, wherein: The first top insulating layer is wrapped around the outside of the first upper metal electrode and the first piezoelectric material layer, and forms a first packaging structure with a portion of the lower metal electrode; The second top insulating layer is wrapped around the outer sides of the second upper metal electrode and the second piezoelectric material layer, and forms a second packaging structure with a portion of the lower metal electrode.

6. The piezoelectric driving electrode assembly according to claim 5, characterized in that: The first upper end shielding electrode is located outside the first top end insulating layer and covers a portion of the top end surface of the first top end insulating layer, or the first upper end shielding electrode wraps around the top end surface and at least a portion of the outer peripheral wall surface of the first top end insulating layer; The second upper end shielding electrode is located outside the second top insulating layer and covers a portion of the top end surface of the second top insulating layer, or the second upper end shielding electrode wraps the top end surface and at least a portion of the outer peripheral wall surface of the second top insulating layer.

7. A processing method for processing the piezoelectric drive electrode assembly according to any one of claims 1 to 6, characterized in that: The following steps are involved: S1, using a double-sided polished SOI wafer as the base layer; S2. thermally oxidizing the wafer to form a bottom insulating layer on the upper surface of the wafer; S3, after metal deposition, the lower metal electrode, the piezoelectric material layer and the upper metal electrode are sequentially stacked on the bottom insulating layer; S4, etching the upper metal electrode so that the upper metal electrode covers at least a portion of the top end surface of the piezoelectric material layer; S5. Etching the piezoelectric material layer so that the piezoelectric material layer covers at least a portion of the top end surface of the lower metal electrode; S6. Etching the lower metal electrode so that the lower metal electrode covers at least a portion of the top end surface of the bottom insulating layer; S7, depositing a top insulating layer so that the top insulating layer at least covers the lower metal electrode, the piezoelectric material layer, and the upper metal electrode; S8, etching the top insulating layer so that the top insulating layer at least covers the metal electrode and the piezoelectric material layer; S9. Depositing and etching the shielding electrode to form an upper shielding electrode covering at least a portion of the top end surface of the top insulating layer, and at least one lower shielding electrode covering a portion of the top end surface of the bottom insulating layer and located on one side of the piezoelectric electrode.

8. A MEMS electric field sensor, characterized in that: A piezoelectric drive electrode assembly comprising the piezoelectric drive electrode assembly according to any one of claims 1 to 6.

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