Light emitting device and display panel

Abstract

This application discloses a light-emitting device and a display panel. The light-emitting device includes a light-emitting portion, a first electrode, and a second electrode. The light-emitting portion includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked together. The first electrode is connected to the first semiconductor layer; the second electrode is connected to the second semiconductor layer. In a plan view of the light-emitting device, the pattern of the light-emitting layer is a centrally symmetrical pattern. This application can improve the luminous efficiency of the light-emitting device.

Description

Technical Field

[0001] This application relates to the field of display technology, specifically to a light-emitting device and a display panel. Background Technology

[0002] Miniature light-emitting diodes (LEDs) are gaining increasing attention due to their advantages of high brightness, high transmittance, and high contrast. A typical miniature LED usually comprises a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode, and a second electrode, with the light-emitting layer and the second semiconductor layer sequentially stacked on one side of the first semiconductor layer.

[0003] To facilitate subsequent bonding of the light-emitting device to the substrate, the first electrode and the light-emitting layer are disposed on the same side of the first semiconductor layer. Because the first electrode and the light-emitting layer are on the same side, the first electrode occupies space intended for the light-emitting layer. When the light-emitting device emits light, the side with the first electrode emits lower brightness, while the side with the second electrode emits higher brightness, resulting in an asymmetry in light emission and affecting the display effect.

[0004] Therefore, it is necessary to propose a new technical solution to solve the above-mentioned technical problems. Summary of the Invention

[0005] The purpose of this application is to provide a light-emitting device and a display panel to improve the display effect of the light-emitting device.

[0006] To solve the above problems, the technical solution of this application is as follows:

[0007] In a first aspect, this application proposes a light-emitting device, comprising:

[0008] The light-emitting part includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked together.

[0009] A first electrode is connected to the first semiconductor layer; and

[0010] The second electrode is connected to the second semiconductor layer;

[0011] In a plan view of the light-emitting device, the pattern of the light-emitting layer is a centrally symmetrical pattern.

[0012] In one embodiment of this application, an opening is provided in the thickness direction of the light-emitting layer, the opening penetrates the light-emitting layer, and the light-emitting layer is disposed around the opening;

[0013] In a plan view of the light-emitting device, the pattern of the opening is symmetrical about the center point.

[0014] In one embodiment of this application, the light-emitting device further includes:

[0015] A first connecting portion is connected to the first semiconductor layer, and a first electrode is disposed on the first connecting portion, the first electrode being electrically connected to the first semiconductor layer through the first connecting portion; and

[0016] The second connection portion is connected to the second semiconductor layer, and the second electrode is disposed on the second connection portion. The second electrode is electrically connected to the second semiconductor layer through the second connection portion.

[0017] In one embodiment of this application, the opening further penetrates the first semiconductor layer and the second semiconductor layer;

[0018] The first connecting portion is disposed within the opening;

[0019] The second connecting portion is disposed within the opening and is spaced apart from the first connecting portion;

[0020] The first electrode and the second electrode are both located on the same side of the first semiconductor layer.

[0021] In one embodiment of this application, the material of the first connecting portion is the same as the material of the first semiconductor layer;

[0022] The second connecting part includes:

[0023] The first sub-part is connected to the side of the first semiconductor layer near the opening, and the first sub-part is spaced apart from the first connecting part;

[0024] The second sub-part is connected to the side of the light-emitting layer near the opening, and the second sub-part is stacked on top of the first sub-part; and

[0025] The third sub-part is connected to the side of the second semiconductor layer near the opening. The third sub-part is located on the side of the second sub-part away from the first sub-part, and the side of the third sub-part away from the second sub-part is connected to the second electrode. The material of the third sub-part is the same as the material of the second semiconductor layer.

[0026] Wherein, the material of the first sub-part is the same as the material of the first semiconductor layer, and the material of the second sub-part is different from the material of the light-emitting layer; or...

[0027] The material of the first sub-part is different from the material of the first semiconductor layer, while the material of the second sub-part is the same as the material of the light-emitting layer.

[0028] In one embodiment of this application, the opening further extends through the second semiconductor layer and terminates at the first semiconductor layer, and the first electrode is disposed at the portion of the first semiconductor layer exposed to the opening;

[0029] The light-emitting device further includes a second connection portion connected to the second semiconductor layer, and a second electrode disposed on the second connection portion, wherein the second electrode is electrically connected to the second semiconductor layer through the second connection portion;

[0030] The second connection portion is stacked on the side of the first semiconductor layer near the second semiconductor layer and connected to the side of the second semiconductor layer near the opening, and the second electrode is disposed on the side of the second connection portion away from the first semiconductor layer.

[0031] In one embodiment of this application, the second connecting portion includes:

[0032] The second sub-part is connected to the side of the light-emitting layer near the opening; and

[0033] The third sub-part is connected to the side of the second semiconductor layer near the opening. The third sub-part is located on the side of the second sub-part away from the first semiconductor layer, and the side of the third sub-part away from the second sub-part is connected to the second electrode. The material of the third sub-part is the same as the material of the second semiconductor layer.

[0034] The material of the second sub-part is different from the material of the light-emitting layer.

[0035] In one embodiment of this application, in a plan view of the light-emitting device, the pattern of the light-emitting device has a center line, and the pattern of the light-emitting layer is a pattern symmetrical about the center line.

[0036] In one embodiment of this application, in a plan view of the light-emitting device, the area of ​​the light-emitting layer is larger than the area of ​​the opening.

[0037] Secondly, this application proposes a display panel including a light-emitting device, the light-emitting device including a light-emitting part, a first electrode and a second electrode, the light-emitting part including a first semiconductor layer, a light-emitting layer and a second semiconductor layer stacked thereon; the first electrode is connected to the first semiconductor layer; the second electrode is connected to the second semiconductor layer; in a plan view of the light-emitting device, the pattern of the light-emitting layer has a center point, and the pattern of the light-emitting layer is a symmetrical pattern about the center point.

[0038] In one embodiment of this application, the display panel further includes:

[0039] A substrate, wherein a plurality of the light-emitting devices are disposed on one side of the substrate;

[0040] An encapsulation layer is disposed on one side of the substrate and covers a plurality of the light-emitting devices;

[0041] Multiple lenses are disposed on the side of the encapsulation layer away from the substrate. Each lens corresponds to one light-emitting device, and the center point of the orthographic projection of the lens on the substrate coincides with the center of symmetry of the orthographic projection of the corresponding light-emitting layer on the substrate.

[0042] In this application, the light-emitting device has a center point in its planar view. By making the pattern of the light-emitting layer symmetrical about the center point of the light-emitting device, the light emission of the light-emitting device is symmetrical, which solves the problem of asymmetrical light emission of traditional light-emitting devices and improves the display effect of the light-emitting device. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of a traditional light-emitting device;

[0044] Figure 2 yes Figure 1 A plan view of the light-emitting device shown;

[0045] Figure 3 This is a schematic diagram of a display panel according to this application;

[0046] Figure 4 This is a schematic diagram of the light-emitting device and lens of this application;

[0047] Figure 5 This is a plan view of an embodiment of the light-emitting device of this application;

[0048] Figure 6 This is a plan view of another embodiment of the light-emitting device of this application;

[0049] Figure 7 yes Figure 6 The image shown is a cross-sectional view of the light-emitting device of this application along the A-A' section line;

[0050] Figure 8 This is a graph showing the relationship between normalized brightness and viewing angle for the experimental and control groups in this application;

[0051] Figure 9 This is a plan view of another embodiment of the light-emitting device of this application;

[0052] Figure 10 yes Figure 9 The image shows a cross-sectional view of the light-emitting device of this application along the B-B' section line.

[0053] Figure 11 This is a schematic diagram of the first embodiment of the light-emitting device of this application;

[0054] Figure 12 yes Figure 11 The image shown is a first cross-sectional view of the light-emitting device of this application along the C-C' section line.

[0055] Figure 13 yes Figure 11 The image shown is a second cross-sectional view of the light-emitting device of this application along the C-C' section line.

[0056] Figure 14 yes Figure 11 The image shown is a third cross-sectional view of the light-emitting device of this application along the C-C' section line.

[0057] Figure 15 yes Figure 11 The image shown is a fourth cross-sectional view of the light-emitting device of this application along the C-C' section line.

[0058] Figure 16 This is a schematic diagram of a second embodiment of the light-emitting device of this application;

[0059] Figure 17 yes Figure 16 The image shown is a first cross-sectional view of the light-emitting device of this application along the D-D' section line.

[0060] Figure 18 yes Figure 16 The image shown is a second cross-sectional view of the light-emitting device of this application along the D-D' section line. Detailed Implementation

[0061] The terms used in this specification and claims have the meanings that are commonly understood by one of ordinary skill in the art to which this application pertains. The terms used in this specification and claims are for the purpose of facilitating the description and understanding of this application only, and are not intended to limit this application to the narrow interpretation of the specific terms used in the specification and claims.

[0062] Please see Figure 1 The conventional light-emitting device 100a includes a first semiconductor layer 11a, a light-emitting layer 12a, a second semiconductor layer 13a, a first electrode 20a, and a second electrode 30a. The light-emitting layer 12a and the second semiconductor layer 13a are sequentially stacked on one side of the first semiconductor layer 11a. To facilitate subsequent bonding of the conventional light-emitting device 100a to the substrate, the first electrode 20a and the light-emitting layer 12a are disposed on the same side of the first semiconductor layer 11a.

[0063] Please see Figure 2In a plan view of a conventional light-emitting device 100a, the conventional light-emitting device 100a has a center line CL'. Because the first electrode 20a and the light-emitting layer 12a are located on the same side, the first electrode 20a occupies space on the side of the light-emitting layer 12a closest to the first electrode 20a, preventing the light-emitting layer 12a from being symmetrical about the center line CL' of the conventional light-emitting device 100a. When the conventional light-emitting device 100a emits light, the side of the conventional light-emitting device 100a with the first electrode 20a has low light brightness, while the side of the conventional light-emitting device 100a with the second electrode 30a has high light brightness. This left-right asymmetry in the light emission of the conventional light-emitting device 100a affects its display effect.

[0064] This application discloses a display device, which can be a mobile phone, tablet computer, e-reader, electronic display screen, laptop computer, mobile phone, augmented reality (AR) / virtual reality (VR) device, media player, wearable device, digital camera, car navigation system, etc. The display device includes a display panel 1000.

[0065] Optionally, the display panel 1000 can be a micro light-emitting diode (Micro LED) display panel 1000, or a sub-millimeter light-emitting diode (Mini LED) display panel 1000.

[0066] Optionally, the display panel 1000 is a miniature light-emitting diode (LED) display panel 1000. The miniature LED display panel 1000 is a direct-view display panel 1000. Compared to a liquid crystal display panel 1000, the miniature LED display panel 1000 has a higher contrast ratio. The embodiments of this application are described using a miniature LED display panel 1000 as an example.

[0067] Optional, please refer to Figure 3 The display panel 1000 includes a substrate 200, a plurality of light-emitting devices 100, an encapsulation layer 300, and a light extraction structure 400. The plurality of light-emitting devices 100 are disposed on one side of the substrate 200. The encapsulation layer 300 is disposed on one side of the substrate 200 and covers the plurality of light-emitting devices 100.

[0068] Optionally, the light-emitting device 100 includes a red light-emitting device 100, a green light-emitting device 100, and a blue light-emitting device 100. Three adjacent light-emitting devices 100 with different emitting colors form a light-emitting unit 500. In the display panel 1000, each light-emitting device 100 is a sub-pixel, and three adjacent sub-pixels of different colors form a light-emitting unit 500, which is a pixel.

[0069] Optionally, the light extraction structure 400 includes multiple lenses 410. The multiple lenses 410 are disposed on the side of the encapsulation layer 300 away from the substrate 200, and one light extraction structure 400 corresponds to one light-emitting unit 500. The design of the light extraction structure 400 can improve the front-side light emission efficiency of the light-emitting unit 500, thereby improving the display effect. Simultaneously, the design of one light extraction structure 400 corresponding to one light-emitting unit 500 ensures good symmetry of each light-emitting unit 500 in all angles (up, down, left, and right) within the overall optical design of the display panel 1000, contributing to a wide viewing angle design and improving the light emission symmetry of each light-emitting unit 500, thus enhancing the display effect.

[0070] Optionally, the light extraction structure 400 includes three lenses 410, see [link to documentation]. Figure 4 One lens 410 is configured to correspond to one light-emitting device 100. The center point of the orthographic projection of the lens 410 onto the substrate 200 coincides with the center of symmetry of the orthographic projection of the corresponding light-emitting layer 12 onto the substrate 200. In this embodiment, the design of one lens 410 corresponding to one sub-pixel can ensure good symmetry of each light-emitting unit 500 in all angles (up, down, left, and right) in the overall optical design of the display panel 1000, which helps to achieve a wide viewing angle specification design, improves the light emission symmetry of each light-emitting device 100, and thus improves the display effect.

[0071] Optional, please refer to Figure 5 This application discloses a light-emitting device 100, including a light-emitting portion 10, a first electrode 20, and a second electrode 30. The light-emitting portion 10 includes a first semiconductor layer 11, a light-emitting layer 12, and a second semiconductor layer 13 stacked together. The first electrode 20 is connected to the first semiconductor layer 11, and the second electrode 30 is connected to the second semiconductor layer 13. In a plan view of the light-emitting device 100, the pattern of the light-emitting layer 12 is a centrally symmetrical pattern.

[0072] Optionally, the pattern of the light-emitting layer 12 has a center point CP, and the pattern of the light-emitting layer 12 is a centrally symmetrical pattern symmetrical about the center point CP.

[0073] Please see Figure 5In this embodiment, the light-emitting layer 12 has a center point CP in the plan view of the light-emitting device 100. By making the pattern of the light-emitting layer 12 symmetrical about the center point CP, the light emission of the light-emitting device 100 is symmetrical, which solves the problem of asymmetrical light emission of the traditional light-emitting device 100a and improves the display effect of the light-emitting device 100.

[0074] Optional, please refer to Figure 6 In a plan view of the light-emitting device 100, the pattern of the light-emitting layer 12 has a center line CL, and the pattern of the light-emitting layer 12 is a symmetrical pattern about the center line CL.

[0075] In this embodiment, the pattern of the light-emitting layer 12 in the plan view of the light-emitting device 100 is both axially symmetric and centrally symmetric. This makes the light emission of the light-emitting device 100 more symmetrical on the four sides corresponding to the center point CP, solving the problem of asymmetrical light emission on the four sides of the traditional light-emitting device 100a and improving the display effect.

[0076] Optionally, in the plan view of the light-emitting device 100, the pattern of the light-emitting layer 12 is one of the following: a circle, a rectangle, a square, a rhombus, a regular polygon, etc., which are both axially symmetric and centrally symmetric figures.

[0077] Optional, please refer to Figure 7 An opening 40 is provided in the thickness direction of the light-emitting layer 12, the opening 40 penetrates the light-emitting layer 12, and the light-emitting layer 12 is arranged around the opening 40. In the plan view of the light-emitting device 100, the pattern of the opening 40 is a symmetrical pattern about the center point CP.

[0078] In this embodiment, an opening 40 is provided in the light-emitting layer 12. The first electrode 20 and the second electrode 30 can be disposed within the opening 40, or the first electrode 20 and the second electrode 30 can be disposed on the periphery of the light-emitting part 10. This avoids the first electrode 20 or the second electrode 30 occupying the space of the light-emitting layer 12. Furthermore, by making the pattern of the opening 40 symmetrical about the center point CP of the light-emitting layer 12, the light emission symmetry of the light-emitting device 100 is further improved, solving the problem of asymmetrical light emission of the traditional light-emitting device 100a, and further improving the display effect of the light-emitting device 100.

[0079] In this embodiment, since the pattern of the opening 40 is symmetrical about the center point CP, the light emission of the light-emitting device 100 on the four sides above, below, left and right corresponding to the center point CP is more symmetrical, which solves the problem of asymmetrical light emission on the four sides of the traditional light-emitting device 100a and improves the display effect.

[0080] Optional, please refer to Figure 6In the plan view of the light-emitting device 100, the pattern of the light-emitting layer 12 is similar to the pattern of the opening 40. The pattern of the light-emitting layer 12 and the pattern of the opening 40 are similar graphics, which makes the light emission of the light-emitting device 100 more symmetrical on the four sides above, below, left and right corresponding to the center point CP. This solves the problem of asymmetrical light emission on the four sides of the traditional light-emitting device 100a and improves the display effect.

[0081] Optionally, the first semiconductor layer 11 is made of either N-type gallium nitride (N-GaN) or P-type gallium nitride (P-GaN), and the second semiconductor layer 13 is made of the other type of N-type gallium nitride or P-type gallium nitride. Subsequent embodiments of this application will be described using an example where the first semiconductor layer 11 is made of N-type gallium nitride and the second semiconductor layer 13 is made of P-type gallium nitride. In subsequent embodiments, the first semiconductor layer 11 is used to transport electrons, and the second semiconductor layer 13 is used to transport holes.

[0082] Optionally, the light-emitting layer 12 is a multi-quantum-well layer.

[0083] Optionally, the first electrode 20 is made of N-type metal, and the second electrode 30 is made of P-type metal.

[0084] Optional, please refer to Figure 7 In a plan view of the light-emitting device 100, the first electrode 20 and the second electrode 30 are located within the opening 40. In this embodiment, with the size of the opening 40 unchanged, the first electrode 20 and the second electrode 30 are disposed within the opening 40. The light-emitting layer 12 can be extended outward away from the opening 40 as needed, thereby increasing the ratio of the area of ​​the light-emitting layer 12 to the area of ​​the opening 40, thereby increasing the amount of light emitted from the front of the light-emitting device 100 and improving the display effect of the light-emitting device 100.

[0085] Optionally, the light-emitting part 10 further includes a transparent conductive layer 14. The transparent conductive layer 14 is disposed on the side of the second semiconductor layer 13 away from the light-emitting layer 12. In this embodiment, the second electrode 30 can directly contact the second semiconductor layer 13 to achieve electrical connection between the second electrode 30 and the second semiconductor layer 13. The second electrode 30 can also directly contact the transparent conductive layer 14. Since the transparent conductive layer 14 is in direct contact with the second semiconductor layer 13, it acts as a current spreading layer and can improve the transport efficiency of the charge carriers generated by the second electrode 30. In the micro light-emitting diode, the hole transport efficiency of the second semiconductor layer 13 is lower than that of the electron transport efficiency of the first semiconductor layer 11. The provision of the transparent conductive layer 14 can improve the hole transport efficiency, thereby making the recombination of holes and electrons in the light-emitting layer 12 more balanced, increasing the number of photons formed by the recombination of holes and electrons, and thus improving the front light-emitting efficiency of the light-emitting device 100. The material of the transparent conductive layer 14 includes transparent indium tin oxide (ITO). The opening 40 also penetrates the second semiconductor layer 13 and the transparent conductive layer 14.

[0086] Optionally, the light-emitting part 10 also includes a reflective layer 15. The reflective layer 15 is disposed on the side of the transparent conductive layer 14 away from the second semiconductor layer 13. The opening 40 also penetrates the reflective layer 15.

[0087] Optionally, the reflective layer 15 is a distributed Bragg reflector (DBR) reflective layer 15. The DBR reflective layer 15 reflects light emitted from inside the light-emitting device 100, reflecting the light that originally propagated downwards back to the top, thereby improving the light emission efficiency, which is crucial for improving the brightness and efficiency of the light-emitting device 100.

[0088] Optionally, the DBR reflective layer 15 is composed of multiple alternating layers of high and low refractive index materials. This periodic structure can achieve high reflectivity within a specific wavelength range, which is very beneficial for improving the luminous brightness of the light-emitting device 100.

[0089] Optionally, in a plan view of the light-emitting device 100, the area of ​​the light-emitting layer 12 is larger than the area of ​​the opening 40. Relatively increasing the area of ​​the light-emitting layer 12 can increase the amount of light emitted from the front of each device, thereby improving the display effect.

[0090] Optionally, in a plan view of the light-emitting device 100, the ratio of the area of ​​the light-emitting layer 12 to the area of ​​the opening 40 is in the range of 1.1 to 20. The ratio of the area of ​​the light-emitting layer 12 to the area of ​​the opening 40 is one of the following values: 1.1, 1.5, 2, 2.5, 3, 3.5, 4, 4.5, 5, 5.5, 6, 6.5, 7, 7.5, 8, 8.5, 9, 9.5, 10, 10.5, 11, 11.5, 12, 12.5, 13, 13.5, 14, 14.5, 15, 15.5, 16, 16.5, 17, 17.5, 18, 18.5, 19, 19.5, and 20.

[0091] To further investigate the effect of the symmetrical arrangement of the light-emitting layer 12 and the symmetrical arrangement of the opening 40 on the light-emitting symmetry performance of the light-emitting device 100, Figure 5 The light-emitting device 100 shown in this application is used as an experimental group. Figure 1 The conventional light-emitting device 100a shown is used as a control group. The same power voltage is input to both the experimental and control groups, and the emitted light from each viewing angle is normalized to obtain the results shown below. Figure 8 The graph shows the relationship between normalized brightness and viewing angle for the experimental and control groups.

[0092] Please see Figure 8 A comparison of the normalized brightness and viewing angle diagrams of the experimental and control groups reveals that in the traditional light-emitting device 100a, the normalized brightness is lower on the side with the first electrode 20a, and higher on the side without the first electrode 20a. This asymmetrical light emission from the traditional light-emitting device 100a affects the display effect. In the light-emitting device 100 of this application, the symmetrical design of the light-emitting layer 12 and the opening 40 results in a uniform distribution of normalized brightness on both sides or the top and bottom sides, achieving symmetrical light emission and improving the display effect.

[0093] Optional, please refer to Figure 9 In the plan view of the light-emitting device 100, the first electrode 20 and the second electrode 30 are located around the light-emitting portion 10. In this embodiment, the arrangement of the first electrode 20 and the second electrode 30 does not affect the symmetrical light emission of the light-emitting layer 12. Simultaneously, the area of ​​the opening 40 can be relatively reduced, and the area of ​​the light-emitting layer 12 can be relatively increased, thereby reducing the proportion of the sidewalls of the light-emitting layer 12 in the surface area of ​​the light-emitting layer 12, weakening the sidewall light emission of the light-emitting layer 12, improving the frontal light emission efficiency of the light-emitting layer 12, and improving the display effect. Please refer to... Figure 10 The first electrode 20 is connected to the first semiconductor layer 11, and the second electrode 30 is connected to the second semiconductor layer 13.

[0094] In the first embodiment of this application:

[0095] Optional, please refer to Figure 11 The opening 40 also penetrates the first semiconductor layer 11 and the second semiconductor layer 13.

[0096] Optional, please refer to Figure 12 The light-emitting device 100 further includes a first connecting portion 50 and a second connecting portion 60. The first connecting portion 50 is connected to the first semiconductor layer 11. A first electrode 20 is disposed on the first connecting portion 50. The first electrode 20 is electrically connected to the first semiconductor layer 11 through the first connecting portion 50. The second connecting portion 60 is connected to the second semiconductor layer 13. A second electrode 30 is disposed on the second connecting portion 60. The second electrode 30 is electrically connected to the second semiconductor layer 13 through the second connecting portion 60. The first connecting portion 50 is disposed within an opening 40. The second connecting portion 60 is disposed within the opening 40 and is spaced apart from the first connecting portion 50. The first electrode 20 and the second electrode 30 are both located on the same side of the first semiconductor layer 11.

[0097] In the first embodiment, in a plan view of the light-emitting device 100, a first electrode 20 and a second electrode 30 are disposed within an opening 40. The first electrode 20 is electrically connected to the first semiconductor layer 11 via a first connecting portion 50. The second electrode 30 is electrically connected to the second semiconductor layer 13 via a second connecting portion 60. The materials of the first connecting portion 50 and the second connecting portion 60 are conductive materials.

[0098] Optional, please refer to Figure 12 The thickness of the second connecting portion 60 is the same as the thickness of the second semiconductor layer 13. The light-emitting device 100 also includes a spacer portion 70, which is stacked on the side of the second connecting portion 60 away from the second electrode 30. The spacer portion 70 connects the side of the light-emitting layer 12 near the opening 40 and the side of the first semiconductor layer 11 near the opening 40. The spacer portion 70 supports the second connecting portion 60, improving the stability of the light-emitting device 100. The spacer portion 70 is spaced apart from the first connecting portion 50, and the material of the spacer portion 70 is an insulating material.

[0099] Optionally, the thickness of the second connection portion 60 is greater than the thickness of the second semiconductor layer 13. See also... Figure 13 The second connecting portion 60 includes a first sub-portion 61, a second sub-portion 62, and a third sub-portion 63. The first sub-portion 61 is connected to the side of the first semiconductor layer 11 near the opening 40. The first sub-portion 61 is spaced apart from the first connecting portion 50. The second sub-portion 62 is connected to the side of the light-emitting layer 12 near the opening 40. The second sub-portion 62 is stacked on top of the first sub-portion 61. The third sub-portion 63 is connected to the side of the second semiconductor layer 13 near the opening 40. The third sub-portion 63 is located on the side of the second sub-portion 62 away from the first sub-portion 61. The side of the third sub-portion 63 away from the second sub-portion 62 is connected to the second electrode 30.

[0100] Optionally, in one embodiment, the material of the third sub-part 63 is a conductive material, and the materials of the first sub-part 61 and the second sub-part 62 are insulating materials.

[0101] In this embodiment, the first sub-part 61 and the second sub-part 62 serve to support the third sub-part 63, thereby improving the structural stability of the light-emitting device 100.

[0102] The first method for manufacturing the light-emitting device 100 of this embodiment includes the following steps:

[0103] S11: A light-emitting portion 10 is formed on a substrate 80. The light-emitting portion 10 includes a first semiconductor layer 11, a light-emitting layer 12, a second semiconductor layer 13, a transparent conductive layer 14, and a reflective layer 15 stacked together.

[0104] S12: The light-emitting part 10 is patterned. In the plan view of the light-emitting device 100, the pattern of the light-emitting layer 12 has a center point CP, and the pattern of the light-emitting layer 12 is a pattern symmetrical about the center point CP.

[0105] S13: An opening 40 is formed by etching the side of the reflective layer 15 away from the transparent conductive layer 14. The opening 40 penetrates the reflective layer 15, the transparent conductive layer 14, the second semiconductor layer 13, the light-emitting layer 12, and the first semiconductor layer 11. The opening 40 exposes a portion of the substrate 80. The light-emitting layer 12 is disposed around the opening 40.

[0106] S14: A first material layer is formed within the opening 40. The first material layer is connected to the side of the first semiconductor layer 11 near the opening 40. The first material layer is a conductive material. The first material layer is patterned to form a first connection portion 50.

[0107] S15: A second material layer is formed within the opening 40. The second material layer is connected to the side of the first semiconductor layer 11 near the opening 40. The second material layer is an insulating material. The second material layer is patterned to form a first sub-part 61. The first sub-part 61 is spaced apart from the first connecting part 50.

[0108] S16: A third material layer is formed within the opening 40. The third material layer is connected to the side of the light-emitting layer 12 closest to the opening 40. The third material layer is an insulating material. The third material layer is patterned to form a second sub-part 62. The second sub-part 62 is stacked on top of the first sub-part 61.

[0109] S17: A fourth material layer is formed within the opening 40. The fourth material layer is connected to the side of the second semiconductor layer 13 closest to the opening 40. The fourth material layer is a conductive material. The fourth material layer is patterned to form a third sub-part 63. The third sub-part 63 is located on the side of the second sub-part 62 away from the first sub-part 61.

[0110] S18: The first electrode 20 is connected to the side of the first connecting portion 50 away from the substrate 80, and the second electrode 30 is connected to the side of the third sub-portion 63 away from the second sub-portion 62.

[0111] S19: Remove substrate 80.

[0112] Optionally, the substrate 80 may be made of glass, sapphire, or polyimide.

[0113] Optionally, in another embodiment, please refer to Figure 14 The material of the first connecting part 50 is the same as the material of the first semiconductor layer 11, and the material of the third sub-part 63 is the same as the material of the second semiconductor layer 13.

[0114] The material of the first sub-part 61 is different from the material of the first semiconductor layer 11. The material of the second sub-part 62 is the same as the material of the light-emitting layer 12. The material of the first sub-part 61 is an insulating material, therefore, the portion of the second sub-part 62 that overlaps with the first sub-part 61 does not emit light.

[0115] In this embodiment, compared to the previous embodiment, the steps corresponding to forming the first connecting part 50, the second sub-part 62, and the third sub-part 63 can be reduced during the production process of the light-emitting device 100, thereby improving production efficiency and reducing production costs.

[0116] It should be understood that, in this embodiment, even if the material of the second sub-part 62 is the same as that of the light-emitting layer 12, it is not considered a component of the light-emitting layer 12, and the pattern of the light-emitting layer 12 in the plan view does not include the second sub-part 62.

[0117] Optionally, in another embodiment, please refer to Figure 15 The material of the first connecting part 50 is the same as the material of the first semiconductor layer 11, and the material of the third sub-part 63 is the same as the material of the second semiconductor layer 13.

[0118] The material of the first sub-section 61 is the same as the material of the first semiconductor layer 11. The material of the second sub-section 62 is different from the material of the light-emitting layer 12. The material of the second sub-section 62 does not contain light-emitting material, therefore, the portion of the second sub-section 62 that overlaps with the first sub-section 61 does not emit light.

[0119] In this embodiment, during the production process of the light-emitting device 100, the steps corresponding to forming the first connecting part 50, the first sub-part 61, and the third sub-part 63 can be reduced, thereby improving production efficiency and reducing production costs.

[0120] In the second embodiment of this application:

[0121] Optional, please refer to Figure 16The opening 40 extends through the second semiconductor layer 13 and terminates at the first semiconductor layer 11. The first electrode 20 is disposed at the portion of the first semiconductor layer 11 exposed to the opening 40.

[0122] The light-emitting device 100 also includes a second connection portion 60. The second connection portion 60 is connected to the second semiconductor layer 13. A second electrode 30 is disposed on the second connection portion 60. The second electrode 30 is electrically connected to the second semiconductor layer 13 through the second connection portion 60. The second connection portion 60 is stacked on the side of the first semiconductor layer 11 near the second semiconductor layer 13 and connected to the side of the second semiconductor layer 13 near the opening 40. The second electrode 30 is disposed on the side of the second connection portion 60 opposite to the first semiconductor layer 11.

[0123] In the second embodiment, in the plan view of the light-emitting device 100, the first electrode 20 and the second electrode 30 are disposed within the opening 40. The first electrode 20 is in direct contact with the first semiconductor layer 11, achieving an electrical connection between the first electrode 20 and the first semiconductor layer 11. The second electrode 30 is electrically connected to the second semiconductor layer 13 through the second connecting portion 60. The material of the second connecting portion 60 is a conductive material. Compared with the first embodiment, the second embodiment saves the patterning process of the first connecting portion 50, improves production efficiency, and reduces production costs.

[0124] Optional, please refer to Figure 17 The second connection portion 60 includes a second sub-portion 62 and a third sub-portion 63. The second sub-portion 62 is connected to the side of the light-emitting layer 12 near the opening 40. The third sub-portion 63 is connected to the side of the second semiconductor layer 13 near the opening 40. The third sub-portion 63 is located on the side of the second sub-portion 62 away from the first semiconductor layer 11. The side of the third sub-portion 63 away from the second sub-portion 62 is connected to the second electrode 30.

[0125] Optional, please refer to Figure 17 In one embodiment, the material of the third sub-part 63 is a conductive material, and the material of the second sub-part 62 is an insulating material.

[0126] In this embodiment, the second sub-part 62 serves to support the third sub-part 63, thereby improving the structural stability of the light-emitting device 100.

[0127] The second method for manufacturing the light-emitting device 100 of this embodiment includes the following steps:

[0128] S31: A light-emitting portion 10 is formed on a substrate 80. The light-emitting portion 10 includes a first semiconductor layer 11, a light-emitting layer 12, a second semiconductor layer 13, a transparent conductive layer 14, and a reflective layer 15 stacked together.

[0129] S32: The light-emitting part 10 is patterned. In the plan view of the light-emitting device 100, the pattern of the light-emitting layer 12 has a center point CP, and the pattern of the light-emitting layer 12 is a pattern symmetrical about the center point CP.

[0130] S33: An opening 40 is formed by etching the side of the reflective layer 15 away from the transparent conductive layer 14. The opening 40 penetrates the reflective layer 15, the transparent conductive layer 14, the second semiconductor layer 13, and the light-emitting layer 12. The opening 40 terminates at the first semiconductor layer 11. The opening 40 exposes a portion of the first semiconductor layer 11. The light-emitting layer 12 is disposed around the opening 40.

[0131] S34: A third material layer is formed within the opening 40. The third material layer is connected to the side of the light-emitting layer 12 near the opening 40. The third material layer is an insulating material. The third material layer is patterned to form a second sub-part 62. The second sub-part 62 is stacked with the portion of the first semiconductor layer 11 exposed in the opening 40.

[0132] S35: A fourth material layer is formed within the opening 40. The fourth material layer is connected to the side of the second semiconductor layer 13 closest to the opening 40. The fourth material layer is a conductive material. The fourth material layer is patterned to form a third sub-part 63. The third sub-part 63 is located on the side of the second sub-part 62 away from the first sub-part 61.

[0133] S36: A first electrode 20 is connected to the side of the first semiconductor layer 11 exposed to the opening 40 away from the substrate 80, and a second electrode 30 is connected to the side of the third sub-part 63 away from the second sub-part 62.

[0134] S37: Substrate stripping 80.

[0135] Compared with the first manufacturing method of the light-emitting device 100 of this application, the second manufacturing method of the light-emitting device 100 of this application can reduce the process related to the first connecting part 50, improve the production efficiency of the light-emitting device 100, and reduce the production cost.

[0136] Optionally, in another embodiment, please refer to Figure 18 The material of the second sub-part 62 is different from that of the light-emitting layer 12, while the material of the third sub-part 63 is the same as that of the second semiconductor layer 13. In this embodiment, compared to the previous embodiment, the process of forming the third sub-part 63 can be reduced during the production of the light-emitting device 100, thereby improving production efficiency and reducing production costs.

[0137] The specific embodiments of this application have been described in detail above. The embodiments disclosed above are merely preferred embodiments of this application. Those skilled in the art can make many modifications and improvements without departing from the concept of this application. All such modifications and improvements fall within the scope of protection defined by the claims of this application.

Claims

1. A light-emitting device, characterized in that, include: The light-emitting part includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer stacked together. The first electrode is connected to the first semiconductor layer; as well as The second electrode is connected to the second semiconductor layer; The second connection portion is connected to the second semiconductor layer, and the second electrode is disposed on the second connection portion. The second electrode is electrically connected to the second semiconductor layer through the second connection portion. In a plan view of the light-emitting device, the pattern of the light-emitting layer is a centrally symmetrical pattern.

2. The light-emitting device as described in claim 1, characterized in that, An opening is provided in the thickness direction of the light-emitting layer, the opening penetrates the light-emitting layer, and the light-emitting layer is arranged around the opening; In a plan view of the light-emitting device, the pattern of the light-emitting layer has a center point, the pattern of the light-emitting layer is symmetrical about the center point, and the pattern of the opening is symmetrical about the center point.

3. The light-emitting device as described in claim 2, characterized in that, The light-emitting device further includes: A first connection portion is connected to the first semiconductor layer, and a first electrode is disposed on the first connection portion. The first electrode is electrically connected to the first semiconductor layer through the first connection portion.

4. The light-emitting device as described in claim 3, characterized in that, The opening also extends through the first semiconductor layer and the second semiconductor layer; The first connecting portion is disposed within the opening; The second connecting portion is disposed within the opening and is spaced apart from the first connecting portion; The first electrode and the second electrode are both located on the same side of the first semiconductor layer.

5. The light-emitting device as described in claim 4, characterized in that, The material of the first connecting portion is the same as the material of the first semiconductor layer; The second connecting part includes: The first sub-part is connected to the side of the first semiconductor layer near the opening, and the first sub-part is spaced apart from the first connecting part; The second sub-part is connected to the side of the light-emitting layer near the opening, and the second sub-part is stacked on top of the first sub-part; and The third sub-part is connected to the side of the second semiconductor layer near the opening. The third sub-part is located on the side of the second sub-part away from the first sub-part, and the side of the third sub-part away from the second sub-part is connected to the second electrode. The material of the third sub-part is the same as the material of the second semiconductor layer. Wherein, the material of the first sub-part is the same as the material of the first semiconductor layer, and the material of the second sub-part is different from the material of the light-emitting layer; or... The material of the first sub-part is different from the material of the first semiconductor layer, while the material of the second sub-part is the same as the material of the light-emitting layer.

6. The light-emitting device as described in claim 2, characterized in that, The opening also extends through the second semiconductor layer and terminates at the first semiconductor layer, and the first electrode is disposed at the portion of the first semiconductor layer exposed to the opening; The second connection portion is stacked on the side of the first semiconductor layer near the second semiconductor layer and connected to the side of the second semiconductor layer near the opening, and the second electrode is disposed on the side of the second connection portion away from the first semiconductor layer.

7. The light-emitting device as described in claim 6, characterized in that, The second connecting part includes: The second sub-part is connected to the side of the light-emitting layer near the opening; and The third sub-part is connected to the side of the second semiconductor layer near the opening. The third sub-part is located on the side of the second sub-part away from the first semiconductor layer, and the side of the third sub-part away from the second sub-part is connected to the second electrode. The material of the third sub-part is the same as the material of the second semiconductor layer. The material of the second sub-part is different from the material of the light-emitting layer.

8. The light-emitting device according to any one of claims 1-7, characterized in that, In a plan view of the light-emitting device, the pattern of the light-emitting layer has a center line, and the pattern of the light-emitting layer is symmetrical about the center line.

9. The light-emitting device according to any one of claims 2-7, characterized in that, In a plan view of the light-emitting device, the area of ​​the light-emitting layer is larger than the area of ​​the opening.

10. A display panel, characterized in that, Includes the light-emitting device as described in any one of claims 1-9.

11. The display panel as claimed in claim 10, characterized in that, The display panel also includes: A substrate, wherein a plurality of the light-emitting devices are disposed on one side of the substrate; An encapsulation layer is disposed on one side of the substrate and covers a plurality of the light-emitting devices; Multiple lenses are disposed on the side of the encapsulation layer away from the substrate. Each lens corresponds to one light-emitting device, and the center point of the orthographic projection of the lens on the substrate coincides with the center of symmetry of the orthographic projection of the corresponding light-emitting layer on the substrate.

Images