Quantum dot patterning method, quantum dot light-emitting layer, quantum dot light-emitting device and display device

Abstract

The invention discloses a quantum dot patterning method, a quantum dot light-emitting layer, a quantum dot light-emitting device and a display device. The patterning method of the quantum dots comprises the following steps of: a, preparing red, green and blue micropore arrays on a substrate by utilizing a semiconductor photoetching processing technology; b, filling the micropores with a first quantum dot solution; c, selectively irradiating the micropores by means of a photomask to realize curing of the micropores at the corresponding positions of the first pixels; d, cleaning the uncured first quantum dot solution with a solvent; e, filling the micropores with a second quantum dot solution again; f, selectively irradiating the micropores by means of a photomask to realize solidification of the micropores at the corresponding positions of the second pixels; g, cleaning the uncured second quantum dot solution with a solvent; and h, repeating the steps to realize selective directional filling of the red and green quantum dots. By means of the quantum dot patterning method, selective directional filling of red and green quantum dots can be achieved on the micron scale.

Description

Technical Field

[0001] The present invention relates to the display field, and in particular to a quantum dot graphic method, a quantum dot light-emitting layer, a quantum dot light-emitting device and a display apparatus. Background Art

[0002] Quantum dots (QDs), as a nanomaterial with excellent optoelectronic properties, have been widely used in display technology in recent years, especially quantum dot light-emitting diodes and quantum dot-enhanced liquid crystal displays. Quantum dot patterning is a key step in achieving high-resolution, high-brightness and full-color display, which determines the luminous characteristics and color of each pixel. Accurate patterning can not only improve the clarity and color reproduction of the display, but also effectively reduce material waste and reduce costs.

[0003] Existing quantum dot patterning methods include inkjet printing, photolithography, and transfer printing. Although inkjet printing is flexible and low-cost, it is limited by the nozzle aperture, making it difficult to achieve high-resolution patterns at the micron level and below, and the nozzle is easily clogged due to the large particle size of quantum dots. Photolithography technology can achieve high resolution, but the process is complex and costly, and the poor compatibility of quantum dot materials with photoresists or etching solutions may lead to patterning failures. The transfer method has high resolution and good material utilization, but the process is complex and the equipment cost is high, which limits its large-scale application. In addition, the two-layer material coverage in the traditional method causes part of the light to be absorbed or scattered, reducing the color conversion efficiency and affecting the display effect.

[0004] In summary, existing quantum dot patterning methods face many challenges in terms of resolution, cost, material compatibility, and color conversion efficiency. A new technical solution is urgently needed to overcome these limitations. Summary of the invention

[0005] In view of this, the present invention provides a quantum dot patterning method, which is an efficient and low-cost micron-level resolution patterning method, while improving color conversion efficiency and display effect.

[0006] The present invention also provides a quantum dot light-emitting layer prepared by the above-mentioned quantum dot imaging method, a quantum dot light-emitting device including the quantum dot light-emitting layer, and a corresponding display device.

[0007] The present invention adopts the following technical solutions:

[0008] A quantum dot patterning method comprises the following steps:

[0009] a. Preparation of microwell arrays: Using semiconductor photolithography technology, red, green and blue microwell arrays are processed on a substrate; the array pattern of the microwell array is consistent with that of the blue light chip;

[0010] b. Filling the first quantum dot solution: filling the microwells with a photocurable first (green quantum dot / red quantum dot) solution;

[0011] c. Photomask curing: selectively irradiating the microholes with the aid of a photomask to achieve curing of the microholes at the corresponding position of the first pixel, that is, curing the position of the first pixel (green / red light pixel);

[0012] d. Cleaning the uncured quantum dots: using a solvent to clean the uncured first quantum dot solution;

[0013] Then, the filling and curing are repeated: the photocurable red light quantum dots / green light quantum dots are filled again, and the above steps are repeated to achieve selective directional filling of red and green quantum dots.

[0014] Specifically, including e. filling the micropores with a second quantum dot solution again;

[0015] f. selectively irradiating the microholes with the aid of a photomask to achieve solidification of the microholes at the corresponding position of the second pixel;

[0016] g. Wash off the uncured second quantum dot solution with a solvent;

[0017] h. Repeat the above steps to achieve selective directional filling of red and green quantum dots;

[0018] The first quantum dot solution is a green quantum dot solution, the second quantum dot solution is a red quantum dot solution, the first pixel is a green pixel, and the second pixel is a red pixel; or the first quantum dot solution is a red quantum dot solution, the second quantum dot solution is a green quantum dot solution, the first pixel is a red pixel, and the second pixel is a green pixel.

[0019] The peel strength of the photocured quantum dot glue obtained after curing the quantum dot solution is greater than 0.2 N / mm to prevent the quantum dots from falling off during the elution process.

[0020] Furthermore, in step c and step f, an alignment device is used to ensure high-precision alignment between the mask plate and the micro-hole array, and the alignment device includes a top-mounted microscope and a side-mounted microscope and two six-axis fine-tuning platforms.

[0021] Furthermore, the diameter of the micropores of the micropore array is 1-50 microns, preferably 5-15 microns, to ensure high-resolution display.

[0022] Furthermore, the quantum dot solution comprises quantum dots, a matrix and a photoinitiator, and the quantum dots can be selected from at least one of group IIB-VIA compounds, group IIIA-VA compounds, group IB-IIIA-VIA compounds and perovskites, such as CsPbX 3(X=Cl, Br, I) or CH 3 NH 3 PbX 3 (X=Cl, Br, I), CdSe, CdTe, ZnS, ZnSe, ZnTe, CdSeTe and other quantum dots, but not limited to these.

[0023] The matrix can be acrylic resin, epoxy resin, polyurethane resin, silicone resin, etc.

[0024] Furthermore, the quantum dot solution contains a photoinitiator, such as 2,2-dimethoxy-2-phenylacetophenone, 2-hydroxy-2-methyl-1-phenylacetone and 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, etc., which is used to initiate a polymerization reaction under light, and the curing temperature is 10°C to 80°C, preferably 20°C to 35°C.

[0025] Furthermore, the photomask is designed to illuminate only the positions of specific color pixels to achieve selective curing. Alignment marks are prefabricated on the photomask and the microwell array.

[0026] Furthermore, the solvent is toluene, isopropanol, ethanol, acetone, etc., which is used to clean the uncured quantum dot solution, and the cleaning time is 1-5 minutes, preferably 2-3 minutes.

[0027] Furthermore, the concentration of the quantum dot solution (the first quantum dot solution and the second quantum dot solution) is 0.1-60.0 wt %, preferably 20-40 wt %, to ensure uniform distribution of the quantum dots in the micropores.

[0028] Wherein, the quantum dot solution further comprises a dispersant and / or a surfactant to improve the dispersibility and stability of the quantum dots in the solution.

[0029] Furthermore, the light intensity of the photocuring process is 10-100 mW / cm², preferably 30-50 mW / cm², and the irradiation time is 1-60 seconds, preferably 3-5 seconds.

[0030] In step a, the preparation of the microwell array comprises the following steps:

[0031] a1. Coating a photoresist on a substrate;

[0032] a2. Define the pattern of red, green and blue micro-holes through photomask exposure;

[0033] a3 developing treatment to remove the unexposed photoresist to form micropores;

[0034] a4. Etching the substrate to form a microporous structure;

[0035] a5. Remove the remaining photoresist and complete the preparation of the microwell array.

[0036] The micro-hole array is arranged in a rectangular array, a hexagonal array or other regular or irregular arrangements to optimize display effects and resolution.

[0037] The present invention also provides a quantum dot light-emitting layer prepared by the above-mentioned graphic method.

[0038] A quantum dot light-emitting device, comprising:

[0039] Substrate: used to support the microhole array and quantum dot light-emitting layer. The substrate material can be glass, silicon wafer, polyimide or other suitable materials;

[0040] Microwell array: located on the substrate, used to contain the quantum dot solution, the microwell depth is 1-12 microns, preferably 5-10 microns, more preferably 2-8 microns;

[0041] Quantum dot light-emitting layer: formed by the above-mentioned graphic method, located in the microhole array, including red and green quantum dots, the particle size of the quantum dots is 2-20 nanometers, preferably 4-15 nanometers;

[0042] Blue light source: can be blue light OLED or Micro-LED, used to excite quantum dots to emit light, the blue light wavelength range is 440-470 nm, preferably 450-460 nm.

[0043] Furthermore, the quantum dot light-emitting device further includes an encapsulation layer, which covers the solidified quantum dots and is used to protect the quantum dot light-emitting layer from the external environment. The encapsulation layer material is a transparent polymer, such as polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA) or polydimethylsiloxane (PDMS).

[0044] The quantum dot light emitting device also includes a blue light source, and a filter is provided between the blue light source and the quantum dot light emitting layer.

[0045] The display device of the present invention includes the above-mentioned quantum dot light-emitting device, which can realize high-resolution full-color display. The display device also includes a driving circuit for controlling the light-emitting sequence and brightness of the blue light source and the quantum dot light-emitting layer to realize dynamic display. Furthermore, the display device also includes an encapsulation layer for protecting the quantum dot light-emitting device from the external environment and extending the service life. Furthermore, the display device also includes a touch screen function, which is suitable for applications such as smart devices, tablet computers, and smart phones.

[0046] Beneficial effects of the present invention:

[0047] (1) The quantum dot patterning method of the present invention can achieve selective directional filling of red and green quantum dots on a micrometer scale by combining semiconductor photolithography processing technology and photomask curing technology, thereby effectively improving the display resolution and color conversion efficiency.

[0048] (2) This method not only avoids the problems of light absorption and scattering caused by traditional multi-layer material covering, but also significantly reduces production costs, simplifies the process flow, and reduces material waste.

[0049] (3) This method has high compatibility and stability, and is suitable for a variety of display technologies such as blue light OLED or Micro-LED. It can achieve high-resolution full-color display and has broad application prospects and commercial value. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 A schematic diagram of the process of a quantum dot patterning method according to an embodiment of the present invention;

[0051] Figure 2 It is a schematic diagram of the quantum dot solution filling and photomask curing of the present invention;

[0052] Figure 3 It is a schematic diagram of the structure of the quantum dot light-emitting device of the present invention.

[0053] Figure numerals: 001 - substrate filled with quantum dot solution, 002 - photomask, 003 - ultraviolet light, 004 - microporous array substrate filled with single green quantum dots, 100 - substrate provided with a quantum dot light-emitting layer, 200 - blue light source, 300 - packaging layer. DETAILED DESCRIPTION

[0054] The technical scheme of the present invention will be further described in detail below in conjunction with specific embodiments. It should be understood that the following embodiments are only exemplary descriptions and explanations of the present invention and should not be construed as limiting the scope of protection of the present invention. All technologies implemented based on the above content of the present invention are included in the scope that the present invention is intended to protect.

[0055] Unless otherwise specified, the raw materials and reagents used in the following examples are commercially available or can be prepared by known methods.

[0056] Example 1

[0057] Figure 1 Schematic diagram of the process of the quantum dot patterning method according to an embodiment of the present invention.

[0058] See also Figure 1First, the red, green, and blue microwell arrays were processed on a glass substrate using semiconductor photolithography. The substrate was made of transparent glass with a thickness of 0.7 mm, and the microwell diameter was set to 10 microns and the depth was 5 microns to ensure high resolution and uniformity. The photolithography process uses ultraviolet photolithography technology to accurately form a microwell array by coating a layer of photoresist (such as SU-8) and undergoing exposure, development, and plasma etching steps. In order to ensure the size consistency and edge clarity of the microwells, deep ultraviolet light with a wavelength of 248 nanometers was used in the photolithography process, and the exposure dose was controlled to 100 mJ / cm².

[0059] Next, the microwells are filled with a photocurable green light quantum dot solution. The solution is prepared by dispersing 30 wt% of green light emitting quantum dots (CdSe / ZnS core-shell structure quantum dots) in an acrylic prepolymer matrix. In order to ensure that the polymerization reaction can be initiated under light, 1 wt% of photoinitiator is added to the solution. The filling process uses a spin coating process to ensure that the solution is evenly and accurately filled into each microwell to avoid excess or insufficient.

[0060] See also Figure 2 , place the substrate 001 filled with quantum dot solution under the photomask 002, and the photomask is designed to illuminate only the position of the green light pixel. Irradiate with ultraviolet light 003 with a wavelength of 365 nanometers, the light intensity is set to 30-50mW / cm², and the irradiation time is 3-5 seconds, so that the photoinitiator in the green light quantum dot solution initiates a polymerization reaction and solidifies the position of the green light pixel. The area not blocked by the photomask remains in a liquid state. Subsequently, ethanol is used as a solvent, and the cleaning time is 2-3 minutes to completely remove the uncured quantum dot solution, ensuring that only the quantum dots at the green light pixel position are retained, while not damaging the cured quantum dots, to obtain a microporous array substrate 004 filled with a single green quantum dot.

[0061] Next, repeat the above steps to fill the photocurable red light quantum dot solution. The red light quantum dot solution is also prepared by dispersing 30 wt% of red light emitting quantum dots (CdSe / ZnS core-shell structure quantum dots) in acrylic prepolymer, and adding 1 wt% of photoinitiator. At this time, the photomask is designed to only irradiate the position of the red light pixel to ensure that the red light quantum dots are cured only at the specified position. The photocuring and cleaning steps are performed again to finally achieve the selective and directional filling of red and green quantum dots.

[0062] After the above steps, the red light and green light quantum dots are selectively filled into the corresponding microholes to form a quantum dot light-emitting layer.

[0063] Finally, a blue light Micro-LED is integrated on the back of the substrate as a blue light source.

[0064] Figure 3is a schematic diagram of the structure of a quantum dot light-emitting device, such as Figure 3 The quantum dot light emitting device comprises a substrate 100 provided with a quantum dot light emitting layer, a blue light source 200 and an encapsulation layer 300. The blue light emitted by the blue light Micro-LED can be converted into red light and green light by the red and green light quantum dots in the microporous array, thereby achieving full-color display.

[0065] Example 2

[0066] In this embodiment, a semiconductor photolithography process is first used to prepare red, green, and blue microwell arrays on a glass substrate. The substrate is made of transparent glass with a thickness of 0.7 mm, and the microwell diameter is set to 8 microns and the depth is 5 microns to ensure high resolution and uniformity. The photolithography process uses ultraviolet photolithography technology to accurately form a microwell array by coating a layer of photoresist (such as SU-8) and undergoing exposure, development, and plasma etching steps. In order to ensure the size consistency and edge clarity of the microwells, deep ultraviolet light with a wavelength of 248 nanometers is used in the photolithography process, and the exposure dose is controlled to be 120 mJ / cm².

[0067] Next, the microwells are filled with a photocurable green light quantum dot solution. The solution is prepared by dispersing green light emitting InP / ZnS core-shell structure quantum dots at a concentration of 20 wt% in an acrylic prepolymer matrix. In order to ensure that polymerization can be initiated under light, 1 wt% of photoinitiator is added to the solution. The filling process uses spin coating technology to ensure that the solution is evenly and accurately filled into each microwell to avoid excess or deficiency. The substrate filled with quantum dot solution is placed under a photomask, which is designed to illuminate only the position of the green light pixel. Through ultraviolet irradiation with a wavelength of 365 nanometers, the light intensity is set to 40 mW / cm², and the irradiation time is 4 seconds, so that the photoinitiator in the green light quantum dot solution initiates polymerization and cures the position of the green light pixel. The area not blocked by the photomask remains in liquid state. Subsequently, ethanol is used as a solvent, and the cleaning time is 3 minutes to completely remove the uncured quantum dot solution, ensuring that only the quantum dots at the green light pixel position are retained, while not damaging the cured quantum dots. Next, repeat the above steps to fill the photocurable red light quantum dot solution. The red light quantum dot solution consists of 20 wt% CsPb(BrI) 3 Perovskite quantum dots are dispersed in acrylic prepolymer and 1 wt% of photoinitiator is added. At this point, the photomask is designed to illuminate only the location of the red light pixel, ensuring that the red light quantum dots are cured only at the designated location. The photocuring and cleaning steps are performed again to finally achieve selective directional filling of red and green quantum dots.

[0068] After the above steps, the red and green quantum dots are selectively filled into the corresponding microholes to form a quantum dot light-emitting layer. Finally, a blue light Micro-LED is integrated on the back of the substrate as a blue light source. The blue light emitted by the blue light Micro-LED can be converted into red and green light by the red and green quantum dots in the microhole array, thereby achieving full-color display.

[0069] Example 3

[0070] In this embodiment, a semiconductor photolithography process is first used to prepare red, green, and blue microwell arrays on a silicon wafer substrate. The substrate is a transparent silicon wafer with a thickness of 0.5 mm, and the microwell diameter is set to 6 microns and the depth is 6 microns to ensure high resolution and uniformity. The photolithography process uses electron beam lithography technology to accurately form a microwell array by coating a layer of photoresist (such as PMMA) and undergoing exposure, development, and dry etching steps. In order to ensure the size consistency and edge clarity of the microwells, an acceleration voltage of 100 kV is used during the photolithography process, and the exposure dose is controlled to be 100 μC / cm².

[0071] Next, the microwells are filled with a photocurable green light quantum dot solution. The solution is prepared by dispersing green light emitting InP / ZnS core-shell structure quantum dots at a concentration of 25 wt% in an acrylic prepolymer matrix. In order to ensure that polymerization can be initiated under light, 1 wt% of photoinitiator is added to the solution. The filling process uses inkjet printing technology to ensure that the solution is evenly and accurately filled into each microwell to avoid excess or deficiency. The substrate filled with quantum dot solution is placed under a photomask designed to illuminate only the position of the green light pixel. Through ultraviolet irradiation with a wavelength of 365 nanometers, the light intensity is set to 35 mW / cm², and the irradiation time is 3 seconds, so that the photoinitiator in the green light quantum dot solution initiates polymerization and cures the position of the green light pixel. The area not blocked by the photomask remains in a liquid state. Subsequently, acetone is used as a solvent and the cleaning time is 2 minutes to completely remove the uncured quantum dot solution, ensuring that only the quantum dots at the green light pixel position are retained without damaging the cured quantum dots. Next, repeat the above steps to fill the photocurable red light quantum dot solution. The red light quantum dot solution is prepared by dispersing 30 wt% of red light emitting CdSe / ZnS core-shell structure quantum dots in acrylic prepolymer, and adding 1 wt% of photoinitiator. At this time, the photomask is designed to illuminate only the position of the red light pixel to ensure that the red light quantum dots are cured only at the specified position. The photocuring and cleaning steps are performed again to finally achieve the selective and directional filling of red and green quantum dots.

[0072] After the above steps, the red and green quantum dots are selectively filled into the corresponding microholes to form a quantum dot light-emitting layer. Finally, a blue OLED is integrated on the back of the substrate as a blue light source. The blue light emitted by the blue OLED can be converted into red and green light by the red and green quantum dots in the microhole array, thereby achieving full-color display.

[0073] Example 4

[0074] In this embodiment, a semiconductor photolithography process is first used to prepare red, green, and blue microwell arrays on a flexible polyethylene terephthalate (PET) substrate. The substrate uses a transparent PET film with a thickness of 0.1 mm, and the microwell diameter is set to 10 microns and the depth is 8 microns to ensure high resolution and uniformity. The photolithography process uses laser direct writing technology to accurately form a microwell array by coating a layer of positive photoresist (such as AZ 4620) through exposure, development, and wet etching steps. In order to ensure the size consistency and edge clarity of the microwells, a 355-nanometer wavelength ultraviolet laser is used in the photolithography process, and the exposure dose is controlled to 50 mJ / cm².

[0075] Next, the microwells were filled with a photocurable green light quantum dot solution. The solution consisted of 25 wt% green light emitting CsPbBr 3 Perovskite quantum dots are dispersed in an acrylic prepolymer matrix. To ensure that polymerization can be initiated under light, 1 wt% of photoinitiator is added to the solution. The filling process uses spin coating technology to ensure that the solution is evenly and accurately filled into each microwell to avoid excess or deficiency. The substrate filled with quantum dot solution is placed under a photomask designed to illuminate only the position of the green light pixel. Through ultraviolet irradiation with a wavelength of 365 nanometers, the light intensity is set to 45 mW / cm², and the irradiation time is 5 seconds, so that the photoinitiator in the green light quantum dot solution initiates polymerization and cures the position of the green light pixel. The area not blocked by the photomask remains liquid. Subsequently, isopropanol is used as a solvent, and the cleaning time is 3 minutes to completely remove the uncured quantum dot solution, ensuring that only the quantum dots at the green light pixel position are retained, while the cured quantum dots are not damaged. Next, the above steps are repeated to fill the photocurable red light quantum dot solution. The red light quantum dot solution consists of CsPb(BrI) with a concentration of 25 wt% 3 Perovskite quantum dots are dispersed in acrylic prepolymer and 1 wt% of photoinitiator is added. At this point, the photomask is designed to illuminate only the location of the red light pixel, ensuring that the red light quantum dots are cured only at the designated location. The photocuring and cleaning steps are performed again to finally achieve selective directional filling of red and green quantum dots.

[0076] After the above steps, the red and green quantum dots are selectively filled into the corresponding microholes to form a quantum dot light-emitting layer. Finally, a flexible blue light Micro-LED is integrated on the back of the substrate as a blue light source. The blue light emitted by the blue light Micro-LED can be converted into red and green light by the red and green quantum dots in the microhole array, thereby achieving full-color display.

[0077] Example 5

[0078] In this embodiment, a semiconductor photolithography process is first used to prepare red, green, and blue micropore arrays on a silicon wafer substrate. The substrate is a transparent PET film with a thickness of 0.1 mm, and the micropore diameter is set to 6 microns and the depth is 12 microns to ensure high resolution and uniformity. The photolithography process uses laser direct writing technology to accurately form a micropore array by coating a layer of positive photoresist (such as AZ4620) and undergoing exposure, development, and wet etching steps. In order to ensure the size consistency and edge clarity of the micropores, a 355-nanometer wavelength ultraviolet laser is used in the photolithography process, and the exposure dose is controlled to be 50 mJ / cm².

[0079] Next, the microwells were filled with a photocurable green light quantum dot solution. The solution consisted of 60 wt% green light emitting CsPbBr 3 Perovskite quantum dots are dispersed in an acrylic prepolymer matrix. To ensure that polymerization can be initiated under light, 1 wt% of photoinitiator is added to the solution. The filling process uses spin coating technology to ensure that the solution is evenly and accurately filled into each microwell to avoid excess or deficiency. The substrate filled with quantum dot solution is placed under a photomask designed to illuminate only the position of the green light pixel. Through ultraviolet light irradiation with a wavelength of 365 nanometers, the light intensity is set to 100 mW / cm², and the irradiation time is 1 second, so that the photoinitiator in the green light quantum dot solution initiates polymerization and cures the position of the green light pixel. The area not blocked by the photomask remains liquid. Subsequently, isopropanol is used as a solvent, and the cleaning time is 3 minutes to completely remove the uncured quantum dot solution, ensuring that only the quantum dots at the green light pixel position are retained, while the cured quantum dots are not damaged. Next, the above steps are repeated to fill the photocurable red light quantum dot solution. The red light quantum dot solution consists of CsPb(BrI) with a concentration of 50 wt% 3 Perovskite quantum dots are dispersed in acrylic prepolymer and 1 wt% of photoinitiator is added. At this point, the photomask is designed to illuminate only the location of the red light pixel, ensuring that the red light quantum dots are cured only at the designated location. The photocuring and cleaning steps are performed again to finally achieve selective directional filling of red and green quantum dots.

[0080] After the above steps, the red and green quantum dots are selectively filled into the corresponding microholes to form a quantum dot light-emitting layer. Finally, a flexible blue light Micro-LED is integrated on the back of the substrate as a blue light source. The blue light emitted by the blue light Micro-LED can be converted into red and green light by the red and green quantum dots in the microhole array, thereby achieving full-color display.

[0081] Example 6

[0082] In this embodiment, a semiconductor photolithography process is first used to prepare red, green, and blue micropore arrays on a silicon wafer substrate. The substrate is a transparent PET film with a thickness of 0.1 mm, and the micropore diameter is set to 50 microns and the depth is 2 microns to ensure high resolution and uniformity. The photolithography process uses laser direct writing technology to accurately form a micropore array by coating a layer of positive photoresist (such as AZ4620) and undergoing exposure, development, and wet etching steps. In order to ensure the size consistency and edge clarity of the micropores, a 355-nanometer wavelength ultraviolet laser is used in the photolithography process, and the exposure dose is controlled to be 50 mJ / cm².

[0083] Next, the microwells were filled with a photocurable green light quantum dot solution. The solution consisted of 0.1 wt% green light emitting CsPbBr 3 Perovskite quantum dots are dispersed in an acrylic prepolymer matrix. To ensure that polymerization can be initiated under light, 1 wt% of photoinitiator is added to the solution. The filling process uses spin coating technology to ensure that the solution is evenly and accurately filled into each microwell to avoid excess or deficiency. The substrate filled with quantum dot solution is placed under a photomask designed to illuminate only the position of the green light pixel. Through ultraviolet irradiation with a wavelength of 365 nanometers, the light intensity is set to 10 mW / cm², and the irradiation time is 60 seconds, so that the photoinitiator in the green light quantum dot solution initiates polymerization and cures the position of the green light pixel. The area not blocked by the photomask remains liquid. Subsequently, isopropanol is used as a solvent, and the cleaning time is 3 minutes to completely remove the uncured quantum dot solution, ensuring that only the quantum dots at the green light pixel position are retained, while the cured quantum dots are not damaged. Next, the above steps are repeated to fill the photocurable red light quantum dot solution. The red light quantum dot solution consists of CsPb(BrI) with a concentration of 0.5 wt% 3 Perovskite quantum dots are dispersed in acrylic prepolymer and 1 wt% of photoinitiator is added. At this point, the photomask is designed to illuminate only the location of the red light pixel, ensuring that the red light quantum dots are cured only at the designated location. The photocuring and cleaning steps are performed again to finally achieve selective directional filling of red and green quantum dots.

[0084] After the above steps, the red and green quantum dots are selectively filled into the corresponding microholes to form a quantum dot light-emitting layer. Finally, a flexible blue light Micro-LED is integrated on the back of the substrate as a blue light source. The blue light emitted by the blue light Micro-LED can be converted into red and green light by the red and green quantum dots in the microhole array, thereby achieving full-color display.

[0085] The above is an explanation of the embodiments of the present invention. However, the present invention is not limited to the above embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A quantum dot patterning method, characterized in that: The following steps are involved: a. Prepare red, green and blue microwell arrays on a substrate using semiconductor photolithography technology; b. filling the micropores with a first quantum dot solution; c. selectively irradiating the microholes with the aid of a photomask to achieve solidification of the microholes at the corresponding position of the first pixel; d. washing away the uncured first quantum dot solution with a solvent; e again filling the micropores with a second quantum dot solution; f. selectively irradiating the microholes with the aid of a photomask to achieve solidification of the microholes at the corresponding position of the second pixel; g. Wash off the uncured second quantum dot solution with a solvent; h. Repeat the above steps to achieve selective directional filling of red and green quantum dots; The first quantum dot solution is a green quantum dot solution, the second quantum dot solution is a red quantum dot solution, the first pixel is a green pixel, and the second pixel is a red pixel; Or the first quantum dot solution is a red light quantum dot solution, the second quantum dot solution is a green light quantum dot solution, the first pixel is a red light pixel, and the second pixel is a green light pixel.

2. The graphical method according to claim 1, characterized in that: The micropore diameter of the micropore array is 1 micron to 50 microns; And / or, the depth of the microwell array is 1 micron to 12 microns.

3. The graphical method according to claim 1, characterized in that: The quantum dot solution comprises quantum dots, a matrix and a photoinitiator, wherein the quantum dots are at least one of a IIB-VIA group compound, a IIIA-VA group compound, an IB-IIIA-VIA group compound and a perovskite.

4. The graphical method according to claim 3, characterized in that: The peel strength of the photocured quantum dot glue obtained after curing the quantum dot solution is greater than 0.2 N / mm.

5. The graphical method according to claim 1, characterized in that: The solvent is toluene, isopropanol, ethanol or acetone.

6. The graphical method according to claim 1, characterized in that: In step c and step f, ultraviolet light is used to irradiate the micropores, the irradiation time is 1 second to 60 seconds, and the light intensity is 10 mW / cm² to 100 mW / cm².

7. The graphical method according to claim 1, characterized in that: The concentration of the quantum dot solution is 0.1-60.0wt%.

8. The graphical method according to claim 1, characterized in that: The preparation of the microwell array comprises the following steps: a1. Coating a photoresist on a substrate; a2. Define the pattern of red, green and blue micro-holes through photomask exposure; a3 developing treatment to remove the unexposed photoresist to form micropores; a4. Etching the substrate to form a microporous structure; a5. Remove the remaining photoresist and complete the preparation of the microwell array.

9. A quantum dot light-emitting layer, characterized in that: The quantum dot is prepared by the patterning method of any one of claims 1 to 8.

10. A quantum dot light-emitting device, characterized in that: Comprising the quantum dot light-emitting layer as described in claim 9.

11. The quantum dot light emitting device according to claim 10, characterized in that: The quantum dot light-emitting layer further includes an encapsulation layer, and the encapsulation layer covers the solidified quantum dots.

12. The quantum dot light emitting device according to claim 10, characterized in that: The quantum dot light emitting device also includes a blue light source, and a filter is provided between the blue light source and the quantum dot light emitting layer.

13. A display device, characterized in that: A quantum dot light-emitting device comprising the quantum dot light-emitting device as described in any one of claims 10-12.

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