Display device and method of manufacturing same

Abstract

The invention relates to a display device and a method of manufacturing the same. The display device includes: a substrate including an emission area and a non-emission area; a touch insulating layer over the substrate; and a touch electrode over the touch insulating layer, overlapping the non-emission region, and including a first conductive layer contacting the touch insulating layer, a second conductive layer over the first conductive layer and including a conductive material different from that of the first conductive layer, and a metal oxide layer over the second conductive layer, a metal oxide layer on a side surface of the second conductive layer facing the emission region, contacting the side surface of the second conductive layer, and not contacting an upper surface of the second conductive layer facing the touch protection layer; and a touch protection layer over the touch insulating layer and the touch electrode.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0137813, filed on October 16, 2023, and No. 10-2024-0033699, filed on March 11, 2024, in the Korean Intellectual Property Office, the disclosures of which are incorporated herein in their entirety by reference. Technical Field

[0003] The present disclosure relates to a display device and a method of manufacturing the display device. Background Art

[0004] As the information society develops, the demand for display devices for displaying images has increased and diversified. For example, display devices have been applied to various electronic devices such as smart phones, digital cameras, laptop computers, navigation devices, and smart TVs.

[0005] Recently, mainly in smartphones and tablet personal computers (PCs), a touch member that recognizes a touch input has been applied to a display device. Such a touch member has been directly formed on a display panel to facilitate simplification of a process and thinning of the display device.

[0006] The display device includes a display panel that generates and displays an image and various input devices. Recently, touch panels that recognize touch inputs have been widely used in display devices, mainly in smart phones or tablet personal computers (PCs). The touch panel determines whether an input has been generated and calculates the corresponding position as the input coordinates. Summary of the invention

[0007] Aspects of the present disclosure provide a display device and a method of manufacturing the display device, which solve a reliability defect in which a partial area of ​​the display device is perceived as reddish from the outside of the display device by reducing side reflected light of a touch wiring.

[0008] According to one or more embodiments of the present disclosure, a display device includes: a substrate including an emission region and a non-emission region; a touch insulating layer above the substrate; a touch electrode above the touch insulating layer, overlapping with the non-emission region and including a first conductive layer, a second conductive layer and a metal oxide layer, the first conductive layer contacts the touch insulating layer, the second conductive layer is above the first conductive layer and includes a conductive material different from the conductive material of the first conductive layer, the metal oxide layer is on a side surface of the second conductive layer facing the emission region, contacts the side surface of the second conductive layer and does not contact the upper surface of the second conductive layer facing the touch protection layer; and a touch protection layer above the touch insulating layer and the touch electrode.

[0009] The second conductive layer may include copper, wherein the metal oxide layer includes copper oxide.

[0010] The metal oxide layer may completely cover the side surface of the second conductive layer.

[0011] The width of the metal oxide layer in a direction parallel to the substrate may be substantially uniform within about 5%.

[0012] A height of the first conductive layer in a direction perpendicular to the substrate may be smaller than a height of the second conductive layer in a direction perpendicular to the substrate.

[0013] The first conductive layer may include any one of a molybdenum-titanium-nickel alloy (MTD alloy), titanium, and a copper-magnesium-aluminum alloy.

[0014] The first conductive layer may include a protrusion portion protruding more than a side surface of the second conductive layer in a direction parallel to the substrate.

[0015] The touch electrode may further include a third conductive layer over the second conductive layer and the metal oxide layer and including a lower surface facing the second conductive layer and the metal oxide layer and forming an undercut.

[0016] The lower surface of the third conductive layer may include: a first portion contacting the second conductive layer; a second portion contacting the metal oxide layer; and a third portion contacting the touch protection layer.

[0017] The second portion may be positioned between the first portion and the third portion.

[0018] The third conductive layer may include a molybdenum-titanium-nickel alloy (MTD alloy).

[0019] The metal oxide layer may contact side surfaces of the first conductive layer.

[0020] The metal oxide layer may not contact side surfaces of the first conductive layer.

[0021] A surface of the metal oxide layer facing the emission region may include an uneven surface.

[0022] The metal oxide layer may expose the second conductive layer, and may completely surround the second conductive layer in a plan view.

[0023] The metal oxide layer may have a mesh shape defining openings in a plan view.

[0024] According to one or more embodiments of the present disclosure, a method for manufacturing a display device includes: forming a first conductive material layer located above a substrate including an emission region and a non-emission region; forming a second conductive material layer located above the first conductive material layer; forming a photoresist located above the second conductive material layer and overlapping the non-emission region; performing a first etching process to form a second conductive layer; forming a photoresist located above the second conductive layer and overlapping the non-light emitting region; performing a second etching process to form the first conductive layer; and performing oxygen plasma treatment to form a metal oxide layer on the side surfaces of the first conductive layer and the side surfaces of the second conductive layer.

[0025] The first etching process may include a wet etching process, wherein the second etching process includes a dry etching process.

[0026] The first conductive layer may include a protrusion portion protruding from a side surface of the second conductive layer.

[0027] The first conductive layer and the second conductive layer may include copper, wherein the metal oxide layer includes copper oxide.

[0028] The display device and the method for manufacturing the display device according to one or more embodiments can reduce the side surface reflected light of the touch line by including a metal oxide layer having low light reflectivity on the side surface of the touch line. Therefore, the reliability defect that a partial area of ​​the display device according to one or more embodiments is observed to be reddish from the outside of the display device can be solved.

[0029] Aspects of the present disclosure are not limited to the above-mentioned effects, and various other aspects are included in the present specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other aspects of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0031] Figure 1 is a schematic perspective view of an electronic device according to one or more embodiments;

[0032] Figure 2 is a perspective view showing a display device included in an electronic device according to one or more embodiments;

[0033] Figure 3 yes Figure 2 A schematic cross-sectional view of a display device;

[0034] Figure 4 It is shown Figure 3 A schematic plan view of the display layers in FIG.

[0035] Figure 5 It is shown Figure 3A schematic plan view of a touch sensor layer in FIG.

[0036] Figure 6 yes Figure 5 An enlarged plan view of area A in FIG.

[0037] Figure 7 It is along Figure 6 A schematic cross-sectional view of the display device taken along line X1-X1' in FIG.

[0038] Figure 8 yes Figure 7 An enlarged cross-sectional view of region C in FIG.

[0039] Fig. 9 It is shown Figure 8 A plan view of the arrangement of the second conductive layer and the metal oxide layer in FIG.

[0040] Fig.10 yes Figure 7 An enlarged cross-sectional view of region E in FIG.

[0041] Fig.11 According to one or more other embodiments Figure 7 An enlarged cross-sectional view of region C in FIG.

[0042] Figures 12 to 15 It is shown that the Figure 8 A view of a manufacturing process of a second touch electrode in a display device of FIG. 1 ;

[0043] Fig.16 According to one or more other embodiments Figure 7 An enlarged cross-sectional view of region C in FIG.

[0044] Fig.17 According to one or more other embodiments Figure 7 an enlarged cross-sectional view of region C in FIG.

[0045] Figures 18 to 22 It is shown that the Fig.17 FIG. 1 is a view of a manufacturing process of a second touch electrode in a display device of FIG. 1 . DETAILED DESCRIPTION

[0046] By referring to the detailed description and drawings of the embodiments, it is easier to understand the aspects of some embodiments of the present disclosure and the methods for implementing the embodiments. The described embodiments are provided as examples so that the present disclosure will be comprehensive and complete, and will fully convey the various aspects of the present disclosure to those skilled in the art. Therefore, redundant, irrelevant or unrelated to the description of the embodiments, or processes, elements and techniques that are not necessary for a person of ordinary skill in the art to fully understand the various aspects of the present disclosure can be omitted. Unless otherwise stated, throughout the drawings and written descriptions, the same reference numerals, features, or combinations thereof refer to the same elements, and therefore, their repeated descriptions can be omitted.

[0047] The described embodiments may have various modifications and may be embodied in different forms and should not be construed as being limited to only the embodiments shown herein. The use of "can", "may", or "may not" when describing an embodiment corresponds to one or more embodiments of the present disclosure.

[0048] It will be understood by those skilled in the art that, in view of the entire content of the present disclosure, the present disclosure covers all modifications, equivalents and substitutes within the conceptual and technical scope of the present disclosure, and unless otherwise stated or implied, each of the features of the embodiments of the present disclosure may be partially or fully combined with each other and various technical interlocks and operations are possible, and each embodiment may be implemented independently of each other or may be implemented together in association.

[0049] In the drawings, the relative sizes of elements, layers, and regions may be exaggerated for clarity and / or descriptive purposes. In addition, the use of cross-hatching and / or shading in the drawings is generally provided to make the boundaries between adjacent elements clear. Therefore, unless otherwise stated, the presence or absence of cross-hatching or shading does not convey or indicate any preference or requirement for specific materials, material properties, sizes, proportions, commonalities between the elements shown, and / or any other characteristics, attributes, properties, etc. of the elements.

[0050] Various embodiments are described in the text with reference to cross-sectional views as schematic diagrams of embodiments and / or intermediate structures. Therefore, variations in the shapes of the diagrams due to, for example, manufacturing techniques and / or tolerances can be expected. In addition, the specific structural or functional descriptions disclosed herein are merely illustrative for the purpose of describing embodiments according to the concepts of the present disclosure. Therefore, the embodiments disclosed herein should not be interpreted as being limited to the elements, layers, or region shapes shown, but should include deviations in shape due to, for example, manufacturing.

[0051] For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and / or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place.

[0052] For ease of explanation, spatially relative terms such as "below", "below", "lower", "under", "under", "above", "upper", and "upper" may be used herein to describe the relationship between an element or feature shown in the drawings and another element or feature (or elements or features). It will be understood that, in addition to the orientation depicted in the drawings, the spatially relative terms are also intended to cover different orientations of the device in use or operation. For example, if the device is turned over in the drawings, the elements described as "below", "below", or "below" other elements or features will then be oriented "above" other elements or features. Therefore, the example terms "below" and "under" can cover both upper and lower orientations. The device can be oriented in other ways (e.g., rotated 90 degrees or at other orientations), and the spatially relative terms used herein are interpreted accordingly. Similarly, when a first portion is described as being arranged "on" a second portion, this indicates that the first portion is arranged at the upper or lower side of the second portion, without limitation to its upper side based on the direction of gravity.

[0053] In addition, the phrase "in a plan view" means when the object portion is observed from above, and the phrase "in a schematic cross-sectional view" means a schematic cross section intercepted by vertically cutting the object portion from the side. The term "overlap" or "overlapping with..." means that the first object can be above or below the second object or on the side of the second object, and vice versa. In addition, the term "overlap" can include stacking, facing or facing, extending throughout, covering or partially covering, or any other appropriate term that a person of ordinary skill in the art will clearly and understand. The statement "non-overlap" can include any other appropriate term such as "away from", "separated from" or "deviation" and any other appropriate term that a person of ordinary skill in the art should clearly and understand. The terms "facing" and "facing" can mean that the first object can be directly or indirectly opposite to the second object. In the case where the third object is between the first object and the second object, the first object and the second object can be understood as being indirectly opposite to each other despite still facing each other.

[0054] It will be understood that when an element, layer, region, or component is referred to as being "formed on," "on," "connected to," or "(operably or communicatively) coupled to" another element, layer, region, or component, the element, layer, region, or component may be formed directly on, directly on, directly connected to, or coupled to the other element, layer, region, or component, or may be formed indirectly on, indirectly on, indirectly connected to, or coupled to the other element, layer, region, or component, such that one or more intervening elements, layers, regions, or components may be present. Additionally, this may collectively represent direct or indirect coupling or connection, as well as integral or non-integrated coupling or connection. For example, when a layer, region, or component is referred to as being "electrically connected" or "electrically coupled" to another layer, region, or component, the layer, region, or component may be directly electrically connected or directly electrically coupled to the other layer, region, and / or component, or there may be one or more intervening layers, regions, or components. The one or more intervening components may include switches, resistors, and / or capacitors, etc. When describing embodiments, unless explicitly described as being directly connected, the statement of connection indicates an electrical connection, and "directly connected / directly coupled" or "directly on..." means that one component is directly connected or directly coupled to another component or directly on another component without intervening components.

[0055] In addition, in this specification, when a part of a layer, film, region or plate, etc. is formed on another part, the formation direction is not limited to the upper direction, but includes forming the part on the side surface or in the lower direction. On the contrary, when a part of a layer, film, region or plate, etc. is formed "below" another part, this not only includes the situation where the part is "directly below" the other part, but also includes the situation where there are further other parts between the part and the other part. At the same time, other expressions describing the relationship between components (such as "between...", "immediately between...", "adjacent to..." and "directly adjacent to...") can be interpreted similarly. It will be understood that when an element or layer is referred to as "between" two elements or layers, the element or layer can be the only element or layer between the two elements or layers, or one or more intermediate elements or layers may also be present.

[0056] For the purposes of this disclosure, when following a list of elements, expressions such as "at least one of," "any one of," or "one or more of," modify the entire list of elements and do not modify the individual elements in the list. For example, "at least one of X, Y, and Z," and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as any combination of only X, only Y, only Z, two or more of X, Y, and Z (such as XYZ, XY, YZ, and XZ for example), or any variation thereof. Similarly, the expression "at least one of A and B" may include A, B, or A and B. As used herein, "or" generally means "and / or," and the term "and / or" includes any and all combinations of one or more of the relevant listed items. For example, the expression "A and / or B" may include A, B, or A and B. Similarly, when following / preceding a list of elements, expressions such as "at least one of," "a plurality of," "one of," and other prepositional phrases modify the entire list of elements and do not modify the individual elements in the list.

[0057] It will be understood that, although the terms "first", "second", "third", etc. can be used herein to describe various elements, components, areas, layers and / or intervals, these elements, components, areas, layers and / or intervals should not be limited by these terms. These terms do not correspond to a specific order, position or priority, and are only used to distinguish an element, member, component, area, region, layer, interval or part from another element, member, component, area, region, layer, interval or part. Therefore, without departing from the spirit and scope of the present disclosure, the first element, first component, first area, first layer or first interval described below can be referred to as the second element, second component, second area, second layer or second interval. Describing an element as a "first" element may not require or imply the presence of a second element or other elements. The terms "first", "second", etc. can also be used herein to distinguish between elements of different categories or different groups. For simplicity, the terms "first", "second", etc. can respectively represent "first type (or first group)", "second type (or second group)", etc.

[0058] In the example, the X-axis, Y-axis and / or Z-axis are not limited to the three axes of the rectangular coordinate system, and can be interpreted in a broader sense. For example, the X-axis, Y-axis and Z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other. The same applies to the first direction (X-axis direction), the second direction (Y-axis direction) and the third direction (Z-axis direction).

[0059] The terms used herein are only used for the purpose of describing the embodiments and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, as used herein, the singular forms "a" and "one (kind / person)" are also intended to include the plural forms, and the plural forms are also intended to include the singular forms. It will be further understood that when used in this specification, the terms "comprises, comprising", "have, having" and "includes, including" illustrate the presence of stated features, integers, steps, operations, element components and / or their groups, but do not exclude the presence or addition of one or more other features, integers, steps, operating elements, components and / or their groups.

[0060] When one or more embodiments can be implemented differently, the specific process order can be different from the described order. For example, two processes described in succession can be performed substantially simultaneously or in the reverse order of the described order.

[0061] As used herein, the terms "substantially," "approximately," "approximately," and similar terms are used as approximate terms and not as terms of degree, and are intended to account for the inherent deviations of measured or calculated values ​​that will be recognized by those of ordinary skill in the art. For example, "substantially" may include a range of + / - 5% of the corresponding value. Taking into account the measurements discussed and the errors associated with the measurements of a particular quantity (i.e., the limitations of the measurement system), "approximately" or "approximately" as used herein include the stated values ​​and mean within an acceptable deviation range of a particular value determined by a person of ordinary skill in the art. For example, "approximately" may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value. In addition, when describing embodiments of the present disclosure, the use of "may" refers to "one or more embodiments of the present disclosure."

[0062] In some embodiments, known structures and devices may be described in conjunction with one or more functional blocks (e.g., block diagrams), units and / or modules in the accompanying drawings to avoid unnecessary blurring of various embodiments. It will be understood by those skilled in the art that such blocks, units and / or modules are physically implemented by logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, line connections, and other electronic circuits. This can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. Blocks, units and / or modules implemented by microprocessors or other similar hardware can be programmed and controlled using software to perform the various functions discussed herein, optionally driven by firmware and / or software. In addition, each block, unit and / or module may be implemented by a combination of dedicated hardware or dedicated hardware that performs some functions and a processor (e.g., one or more programmed microprocessors and related circuits) that performs functions different from those of the dedicated hardware. In addition, in some embodiments, without departing from the scope of the present disclosure, blocks, units and / or modules may be physically separated into two or more interacting separate blocks, units and / or modules. In addition, in some embodiments, without departing from the scope of the present disclosure, blocks, units and / or modules may be physically combined into more complex blocks, units and / or modules.

[0063] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. It will be further understood that, unless explicitly defined as such herein, terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their context in the relevant art and / or the meaning of this specification, and should not be interpreted in an idealized or overly formalized sense.

[0064] Figure 1 is a schematic perspective view of an electronic device 1 according to one or more embodiments.

[0065] Reference Figure 1 , the electronic device 1 displays a moving image or a still image. The electronic device 1 may refer to all electronic devices that provide a display screen. For example, a television set, a laptop computer, a monitor, a billboard, an Internet of Things (IoT) device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notepad, an electronic book, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, and a video camera that provide a display screen may be included in the electronic device 1.

[0066] exist Figure 1In the figure, a first direction (X-axis direction), a second direction (Y-axis direction) and a third direction (Z-axis direction) are defined. The first direction (X-axis direction) and the second direction (Y-axis direction) may be perpendicular to each other, the first direction (X-axis direction) and the third direction (Z-axis direction) may be perpendicular to each other, and the second direction (Y-axis direction) and the third direction (Z-axis direction) may be perpendicular to each other. It can be understood that the first direction (X-axis direction) refers to the lateral direction in the drawings, the second direction (Y-axis direction) refers to the longitudinal direction in the drawings, and the third direction (Z-axis direction) refers to the upper and lower directions (i.e., the thickness direction) in the drawings. In the following description, unless otherwise expressly specified, the term "direction" may refer to two directions toward both sides extending along the direction. In addition, when the two "directions" extending to both sides need to be distinguished from each other, one side will be referred to as "one side in the direction" and the other side will be referred to as "the other side in the direction". In Figure 1 , a direction pointed by an arrow indicating a direction will be referred to as one side, and a direction opposite to this direction will be referred to as the other side.

[0067] In the following, for ease of explanation, when referring to the surface of the electronic device 1 or the various components of the electronic device 1, one surface on the side facing the direction in which the image is displayed (the third direction / Z-axis direction) will be referred to as the upper surface, and the surface opposite to the one surface will be referred to as the other surface / lower surface. However, the present disclosure is not limited to this, and the upper surface and the lower surface of the component may be referred to as the front surface and the rear surface, respectively, or as the first surface and the second surface. In addition, when describing the relative positions of the various components of the electronic device 1, one side on the third direction (Z-axis direction) may be referred to as the upper portion, and the other side on the third direction (Z-axis direction) may be referred to as the lower portion.

[0068] Various modifications may be made to the shape of the electronic device 1. For example, the electronic device 1 may have a shape such as a rectangular shape having a width greater than a length, a rectangular shape having a length greater than a width, a square shape, a quadrilateral shape having rounded corners (vertices), other polygonal shapes, or a circular shape in a plan view.

[0069] The electronic device 1 may include a display area DA and a non-display area NDA. The display area DA is an area where an image may be displayed, and the non-display area NDA is an area where an image is not displayed. The display area DA may also be referred to as an active area, and the non-display area NDA may also be referred to as a non-active area. The display area DA may substantially occupy the center of the electronic device 1.

[0070] Figure 2 is a perspective view showing a display device 10 included in the electronic device 1 according to one or more embodiments.

[0071] Reference Figure 2 , the electronic device 1 according to one or more embodiments may include a display device 10. The display device 10 may provide an image displayed in the electronic device 1. Examples of the display device 10 may include an inorganic light emitting diode display device, an organic light emitting display device, a quantum dot light emitting display device, a plasma display device, and a field emission display device, etc. Hereinafter, a case in which an organic light emitting diode display device is applied as an example of a display device will be described by way of example, but the present disclosure is not limited thereto, and if applicable, the same technical spirit may be applied to other display devices.

[0072] The display device 10 may have a shape similar to that of the electronic device 1 in a plan view. For example, the display device 10 may have a rectangular shape in a plan view, and the rectangular shape has a short side in a first direction (X-axis direction) and a long side in a second direction (Y-axis direction). The angle at which the short side in the first direction (X-axis direction) and the long side in the second direction (Y-axis direction) intersect may be rounded with a curvature, but is not limited thereto, and may also be a right angle. The shape of the display device 10 in a plan view is not limited to a rectangular shape, and may be a shape similar to other polygonal shapes, a circular shape, or an elliptical shape.

[0073] The display device 10 may include a display panel 100 , a display driver 200 , a circuit board 300 , and a touch driver 400 .

[0074] The display panel 100 may include a main area MA and a sub area SBA. The main area MA may include a display area DA including pixels displaying an image and a non-display area NDA located around the display area DA.

[0075] The display area DA may emit light from a plurality of emission areas or a plurality of opening areas described later. For example, the display area DA may include a pixel circuit including a switching element, a pixel defining film defining an emission area or an opening area, and a self-luminous element.

[0076] The non-display area NDA may be an area outside the display area DA. The non-display area NDA may be defined as an edge area of ​​the main area MA of the display panel 100. The non-display area NDA may include a line driver for supplying a signal to the display area DA and a line connecting the display driver 200 and the display area DA to each other.

[0077] The sub-area SBA may be an area extending from one side of the main area MA. The sub-area SBA may include a flexible material that may be bent, folded, and curled. For example, when the sub-area SBA is bent, the sub-area SBA may overlap the main area MA in the thickness direction (e.g., the third direction (Z-axis direction)). The sub-area SBA may include the display driver 200 and the display pad PD (see FIG. 1 ) connected to the circuit board 300. Figure 4 ). In one or more other embodiments, the sub-area SBA may be omitted, and the display driver 200 and the display pad PD may be positioned in the non-display area NDA.

[0078] The display driver 200 may output signals and voltages for driving the display panel 100. The display driver 200 may provide signals and voltages to the data lines DL (see FIG. 1 ) to be described later. Figure 4 ) supplies data voltage. In addition, the display driver 200 may supply power lines VL1 and VL2 (see Figure 4 ) supplies source voltage and can provide power to gate driver 210 (see Figure 4 ) supplies a gate control signal. The display driver 200 may be formed as an integrated circuit (IC) and mounted on the display panel 100 in a chip on glass (COG) manner, a chip on plastic (COP) manner, or an ultrasonic bonding manner. As an example, the display driver 200 may be located in the sub-region SBA and may overlap with the main region MA in the thickness direction by bending of the sub-region SBA. As another example, the display driver 200 may be mounted on the circuit board 300.

[0079] The circuit board 300 may be attached to the display pad PD of the display panel 100 using an anisotropic conductive film (ACF). The circuit board 300 may be electrically connected to the display pad PD. The circuit board 300 may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film.

[0080] The touch driver 400 may be mounted on the circuit board 300. The touch driver 400 may be connected to the touch sensor layer 180 (see FIG. 1 ) of the display panel 100. Figure 3 ).

[0081] Figure 3 yes Figure 2 Schematic cross-sectional view of a display device 10 .

[0082] Reference Figure 3 , the display panel 100 may include a display layer DPL, a touch sensor layer 180 and a color filter layer 190 . The display layer DPL may include a substrate 110 , a thin film transistor layer 130 , a display element layer 150 and a thin film encapsulation layer 170 .

[0083] The substrate 110 may be a base substrate or a base member. The substrate 110 may be a flexible substrate that can be bent, folded, and curled. For example, the substrate 110 may include a polymer resin such as polyimide (PI), but is not limited thereto. In one or more other embodiments, the substrate 110 may include a glass material or a metal material.

[0084] The thin film transistor layer 130 may be located on the substrate 110 (as used herein, "located on" may mean "over"). The thin film transistor layer 130 may be located in the display area DA, the non-display area NDA, and the sub-area SBA. The thin film transistor layer 130 may include thin film transistors of multiple pixels and multiple lines.

[0085] The display element layer 150 may be located on the thin film transistor layer 130. The display element layer 150 may be located to overlap with the display area DA. The display element layer 150 may include a plurality of light emitting elements ED (see FIG. Figure 7 ) and pixel defining layer 151 (see Figure 7 As an example, the light emitting element according to one or more embodiments may include at least one of an organic light emitting diode (LED) including an organic light emitting layer, a quantum dot LED including a quantum dot light emitting layer, an inorganic LED including an inorganic semiconductor, and a micro LED, but is not limited thereto.

[0086] The thin film encapsulation layer 170 may be positioned on the display element layer 150. The thin film encapsulation layer 170 may be positioned to overlap the display area DA and the non-display area NDA. The thin film encapsulation layer 170 may cover the upper surface and the side surface of the display element layer 150, and may protect the display element layer 150 from external oxygen and moisture. The thin film encapsulation layer 170 may include at least one inorganic film and at least one organic film for encapsulating the display element layer 150.

[0087] The touch sensor layer 180 may be located on the thin film encapsulation layer 170. The touch sensor layer 180 may be located to overlap the display area DA and the non-display area NDA. The touch sensor layer 180 may sense a user's touch in a mutual capacitance manner or a self-capacitance manner.

[0088] The color filter layer 190 may be located on the touch sensor layer 180. The color filter layer 190 may be located to overlap the display area DA and the non-display area NDA. The color filter layer 190 may absorb some light introduced from outside the display device 10 to reduce reflected light caused by external light. Therefore, the color filter layer 190 may reduce or prevent distortion of color caused by reflection of external light.

[0089] Since the color filter layer 190 is directly on the touch sensor layer 180, the display device 10 may not require a separate substrate for the color filter layer 190. Therefore, the thickness of the display device 10 may be relatively small. In addition, according to an embodiment, the color filter layer 190 may also be omitted.

[0090] like Figure 3 As shown in , a portion of the display layer DPL overlapping the sub-area SBA may be bent. When the portion of the display layer DPL is bent, the display driver 200, the circuit board 300, and the touch driver 400 may overlap the main area MA in the third direction (Z-axis direction).

[0091] Figure 4 It is shown Figure 3 Schematic plan view of the display layer DPL.

[0092] Reference Figure 4 , the display layer DPL included in one or more embodiments may include a plurality of pixels PX, a plurality of gate lines GL, a plurality of data lines DL, and a plurality of second power lines VL2 in a portion overlapping the display area DA of the main area MA.

[0093] Each of the plurality of pixels PX may be defined as a minimum unit for emitting light. Each of the plurality of pixels PX may be a first emission area EA1, a second emission area EA2, and a third emission area EA3 (see FIG. 1 ) which will be described later. Figure 7 ) in the corresponding one.

[0094] The plurality of gate lines GL may supply gate signals received from the gate driver 210 to the plurality of pixels PX. The plurality of gate lines GL may extend in a first direction (X-axis direction) and may be spaced apart from each other in a second direction (Y-axis direction) crossing the first direction (X-axis direction).

[0095] The plurality of data lines DL may supply the plurality of pixels PX with data voltages received from the display driver 200. The plurality of data lines DL may extend in the second direction (Y-axis direction) and may be spaced apart from each other in the first direction (X-axis direction).

[0096] The plurality of second power lines VL2 may supply a source voltage received from the display driver 200 to the plurality of pixels PX. Here, the source voltage may be at least one of a driving voltage, an initialization voltage, and a reference voltage. The plurality of second power lines VL2 may extend in the second direction (Y-axis direction) and may be spaced apart from each other in the first direction (X-axis direction).

[0097] The display layer DPL included in one or more embodiments may include a first power line VL1 , a gate driver 210 , a plurality of fan-out lines FOL, and a gate control line GCL in a portion overlapping the non-display area NDA of the main area MA.

[0098] The gate driver 210 may generate a plurality of gate signals based on the gate control signal, and may sequentially supply the plurality of gate signals to the plurality of gate lines GL according to a set order.

[0099] The first power line VL1 may be located in the non-display area NDA so as to surround the display area DA. The first power line VL1 may supply a source voltage received from the display driver 200 to the plurality of pixels PX. In addition, the first power line VL1 may be electrically connected to various lines located in the display area DA.

[0100] The plurality of fan-out lines FOL may extend from the display driver 200 to the display area DA. The fan-out lines FOL may supply a data voltage received from the display driver 200 to the plurality of data lines DL.

[0101] The gate control line GCL may extend from the display driver 200 to the gate driver 210. The gate control line GCL may supply a gate control signal received from the display driver 200 to the gate driver 210. Figure 4 It has been shown that the gate driver 210 is only located in the non-display area NDA located on the left side of the display area DA, but the present disclosure is not limited thereto. In one or more other embodiments, the display device 10 may include a plurality of gate drivers 210 located on the left and right sides of the display area DA, respectively.

[0102] The display layer DPL included in one or more embodiments may include the display driver 200 and a plurality of display pads PD in a portion overlapping the sub-area SBA.

[0103] The display driver 200 may output signals and voltages for driving a plurality of pixels PX to a plurality of fan-out lines FOL. The display driver 200 may supply data voltages to the data lines DL through the plurality of fan-out lines FOL. Therefore, the data voltages may be supplied to the plurality of pixels PX, and the brightness of the plurality of pixels PX may be controlled. In addition, the display driver 200 may supply gate control signals to the gate driver 210 through the gate control lines GCL.

[0104] A plurality of display pads PD may be provided through the circuit board 300 (see Figure 3 ) is connected to a graphics system. A plurality of display pads PD may be connected to the circuit board 300 to receive digital video data, and may supply the digital video data to the display driver 200.

[0105] Figure 5 It is shown Figure 3 Schematic plan view of touch sensor layer 180.

[0106] Reference Figure 5 The touch sensor layer 180 may include a touch sensing area TSA for sensing a user's touch and a touch peripheral area TPA located around the touch sensing area TSA. The touch sensing area TSA may be connected to Figure 4 The display area DA overlaps with the touch peripheral area TPA. Figure 4 The non-display area NDA overlaps.

[0107] In some embodiments, the touch sensor layer 180 may include a plurality of driving electrodes TE, a plurality of sensing electrodes RE, and a plurality of dummy electrodes DM in a portion overlapping the touch sensing area TSA, and may include a plurality of driving lines TL and a plurality of sensing lines RL in a portion overlapping the touch peripheral area TPA. In addition, the touch sensor layer 180 may include a plurality of driving pads TP and a plurality of sensing pads RP in a portion overlapping the sub-area SBA.

[0108] The plurality of sensing electrodes RE may extend in the first direction (X-axis direction). As an example, the plurality of sensing electrodes RE may be positioned from the left side of the touch sensing area TSA to the right side of the touch sensing area TSA. The plurality of sensing electrodes RE may be electrically disconnected from each other, and respective portions of the sensing electrodes RE may be connected to each other through a second connection electrode BE2 (see FIG. Figure 6 Each of the plurality of sensing electrodes RE may be connected to a corresponding sensing line RL at one side and the other side of the touch sensing area TSA in the first direction (X-axis direction).

[0109] The plurality of driving electrodes TE may extend in the second direction (Y-axis direction). As an example, the plurality of driving electrodes TE may be positioned from the lower side of the touch sensing area TSA to the upper side of the touch sensing area TSA. The plurality of driving electrodes TE may be electrically disconnected from each other. Portions of the driving electrodes TE adjacent to each other in the second direction (Y-axis direction) may be connected to each other via the first connection electrode BE1 (see FIG. Figure 6 Each of the plurality of driving electrodes TE may be connected to a corresponding driving line TL on one side (a direction in which the plurality of driving pads TP and the plurality of sensing pads RP are located) of the touch sensing area TSA in the second direction (Y-axis direction).

[0110] Each of the dummy electrodes DM may be surrounded by the driving electrode TE or the sensing electrode RE. Each of the plurality of dummy electrodes DM may be electrically disconnected from the driving electrode TE or the sensing electrode RE. The dummy electrode DM may be spaced apart from the driving electrode TE or the sensing electrode RE and may be electrically floated from the driving electrode TE or the sensing electrode RE.

[0111] exist Figure 5 It has been shown that each of the plurality of driving electrodes TE, the plurality of sensing electrodes RE, and the plurality of dummy electrodes DM has a rhombus shape in a plan view, but the present disclosure is not limited thereto. For example, each of the plurality of driving electrodes TE, the plurality of sensing electrodes RE, and the plurality of dummy electrodes DM may have a quadrilateral shape other than a rhombus shape, a polygonal shape other than a quadrilateral shape, a circular shape, or an elliptical shape in a plan view.

[0112] A plurality of driving pads TP and a plurality of sensing pads RP may be located in the sub-area SBA. The plurality of driving pads TP and the plurality of sensing pads RP may be electrically connected to the plurality of display pads PD (see FIG. Figure 4 ).

[0113] Figure 6 yes Figure 5 An enlarged plan view of area A in FIG. Figure 6 1 is a plan view showing a schematic arrangement of a display area DA included in the display device 10 .

[0114] Reference Figure 6 , touch sensor layer 180 (see Figure 3 ) may include a first touch electrode 182 and a second touch electrode 184. The first touch electrode 182 may include a first connection electrode BE1, and the second touch electrode 184 may include a drive electrode TE, a sense electrode RE, and a second connection electrode BE2. The first touch electrode 182 and the second touch electrode 184 may be positioned at different layers in a cross section. In other words, the first connection electrode BE1 included in the first touch electrode 182 may be positioned at a different layer from the second connection electrode BE2, the drive electrode TE, and the sense electrode RE included in the second touch electrode 184.

[0115] The first touch electrode 182 and the second touch electrode 184 may be formed in a mesh shape. Generally, when the touch sensor layer 180 is directly formed on the thin film encapsulation layer 170 (see Figure 3 ) is on, at the common electrode CE (see Figure 7) and the first touch electrode 182 and the second touch electrode 184 may form a relatively large parasitic capacitance. Therefore, in order to reduce such parasitic capacitance, the first touch electrode 182 and the second touch electrode 184 may be formed as electrodes having a mesh shape. Therefore, the first touch electrode 182 and the second touch electrode 184 may not overlap with the multiple emission areas EA1, EA2, and EA3. That is, the possibility that the multiple electrodes included in the touch sensor layer 180 block the light emitted from the multiple emission areas EA1, EA2, and EA3 to reduce the brightness of the light can be reduced or prevented.

[0116] The first connection electrode BE1 included in the first touch electrode 182 can electrically connect adjacent drive electrodes TE to each other. However, as described above, the first connection electrode BE1 and the drive electrode TE can be located at different layers in the cross section. Therefore, one side of the first connection electrode BE1 can be connected to any one of the drive electrodes TE adjacent to each other in the second direction (Y-axis direction) through the touch contact hole TCNT1. Similarly, the other side of the first connection electrode BE1 can be connected to another of the drive electrodes TE adjacent to each other in the second direction (Y-axis direction) through the touch contact hole TCNT1. Therefore, a plurality of drive electrodes TE adjacent to each other in the second direction (Y-axis direction) can be electrically connected to each other through the first connection electrode BE1, and a plurality of drive electrodes TE and a plurality of sensing electrodes RE adjacent to each other can be electrically disconnected from each other at portions where they intersect.

[0117] In addition, the sensing electrodes RE adjacent to each other in the first direction (X-axis direction) can be electrically connected to each other through a plurality of second connection electrodes BE2, respectively. The second connection electrodes BE2 are located at the same layer as the plurality of sensing electrodes RE and can therefore be directly electrically connected to the plurality of sensing electrodes RE without a touch contact hole.

[0118] like Figure 6 As shown in , the emission areas EA1, EA2, and EA3 may be defined between the first touch electrode 182 and the second touch electrode 184. Each of the emission areas EA1, EA2, and EA3 may include a first emission area EA1 for emitting light of a first color, a second emission area EA2 for emitting light of a second color, and a third emission area EA3 for emitting light of a third color. The first emission area EA1 and the third emission area EA3 may be adjacent to each other in a first direction (X-axis direction), and a plurality of second emission areas EA2 may be adjacent to each other in a second direction (Y-axis direction), but the present disclosure is not limited thereto.

[0119] In some embodiments, the pixel PX may include at least one first emission area EA1, at least two second emission areas EA2, and at least one third emission area EA3. As an example, the first color may be red, the second color may be green, and the third color may be blue. The pixel PX may be the smallest unit for emitting white light.

[0120] The non-emission area NLA may be positioned to surround the respective emission areas EA1, EA2, and EA3. The pixel defining layer 151, the first touch electrode 182, the second touch electrode 184, and the light blocking layer BM (see FIG. 1 ) to be described later Figure 7 ) can overlap with the non-emitting area NLA.

[0121] Figure 7 It is along Figure 6 A schematic cross-sectional view of the display device 10 taken along the line X1-X1' in FIG. Figure 7 A cross-sectional structure of the display device 10 is described. The substrate 110 has been described above, and thus a detailed description thereof is omitted.

[0122] The thin film transistor layer 130 may include a buffer layer 111 , a thin film transistor TFT, a gate insulating layer 113 , a first interlayer insulating layer 117 , a second interlayer insulating layer 119 , a first pixel connection electrode CNE1 , a first through layer 121 , a second pixel connection electrode CNE2 , and a second through layer 123 .

[0123] The buffer layer 111 may be positioned on the substrate 110. The buffer layer 111 may include an inorganic film capable of reducing or preventing the penetration of air or moisture. For example, the buffer layer 111 may include a plurality of inorganic films stacked alternately. As an example, the buffer layer 111 may be formed as a plurality of films in which one or more inorganic films of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked.

[0124] The thin film transistor TFT may be positioned on the buffer layer 111. The thin film transistor TFT may include an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE. The active layer ACT of the thin film transistor TFT includes polycrystalline silicon, single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. The active layer ACT overlapping the gate electrode GE in the third direction (Z-axis direction) (i.e., the thickness direction of the substrate 110) may be defined as a channel region. The source electrode SE and the drain electrode DE are regions that do not overlap with the gate electrode GE in the third direction (Z-axis direction), and may have conductivity by doping the silicon semiconductor or the oxide semiconductor with ions or impurities.

[0125] The gate insulating layer 113 may be positioned on the thin film transistor TFT. The gate insulating layer 113 may cover the thin film transistor TFT and the buffer layer 111, and may insulate the active layer ACT and the gate electrode GE from each other. The gate insulating layer 113 may be located at substantially the same thickness along the contour of the thin film transistor TFT. The gate insulating layer 113 may include a first contact hole CNTH1 through which the first pixel connection electrode CNE1 penetrates.

[0126] The gate insulating layer 113 may include an inorganic insulating material and may be formed in a plurality of layers. As an example, the gate insulating layer 113 may be made of an inorganic material such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer.

[0127] The gate electrode GE may be located on the gate insulating layer 113. The gate electrode GE may overlap the active layer ACT, with the gate insulating layer 113 interposed between the gate electrode GE and the active layer ACT. The gate electrode GE may include a metal. As an example, the gate electrode GE may include one or more metals selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu).

[0128] The first interlayer insulating layer 117 may be located on the gate electrode GE. The first interlayer insulating layer 117 may include an inorganic insulating material and may be formed in a plurality of layers. As an example, the first interlayer insulating layer 117 may be formed as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer insulating layer 117 may include a first contact hole CNTH1 through which the first pixel connection electrode CNE1 penetrates.

[0129] The capacitor electrode CAE may be located on the first interlayer insulating layer 117. The capacitor electrode CAE may overlap with the gate electrode GE of the thin film transistor TFT in the third direction (Z-axis direction). Because the first interlayer insulating layer 117 has a dielectric constant (e.g., a predetermined dielectric constant), a capacitor may be formed by the capacitor electrode CAE, the gate electrode GE, and the first interlayer insulating layer 117 located between the capacitor electrode CAE and the gate electrode GE. The capacitor electrode CAE may include a metal. As an example, the capacitor electrode CAE may include one or more metals selected from molybdenum (Mo), aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), titanium (Ti), tantalum (Ta), tungsten (W), and copper (Cu).

[0130] The second interlayer insulating layer 119 may be positioned on the first interlayer insulating layer 117 and the capacitor electrode CAE. The second interlayer insulating layer 119 may include an inorganic insulating material and may be formed as a plurality of layers. As an example, the second interlayer insulating layer 119 may be formed as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating layer 119 may include a first contact hole CNTH1 through which the first pixel connection electrode CNE1 penetrates.

[0131] The first pixel connection electrode CNE1 may be located on the second interlayer insulating layer 119. The first pixel connection electrode CNE1 may electrically connect the drain electrode DE of the thin film transistor TFT and the second pixel connection electrode CNE2 to each other. The first pixel connection electrode CNE1 may be embedded in a first contact hole CNTH1 formed in the first interlayer insulating layer 117, the second interlayer insulating layer 119, and the gate insulating layer 113 to contact the drain electrode DE of the thin film transistor TFT.

[0132] The first through layer 121 may cover the first pixel connection electrode CNE1 and the second interlayer insulating layer 119. The first through layer 121 may protect the thin film transistor TFT. The first through layer 121 may include an organic material. As an example, the first through layer 121 may include an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. The first through layer 121 may include a second contact hole CNTH2 through which the second pixel connection electrode CNE2 penetrates.

[0133] The second pixel connection electrode CNE2 may be located on the first through-layer 121. The second pixel connection electrode CNE2 may electrically connect the first pixel connection electrode CNE1 and the pixel electrode AE ​​to each other. The second pixel connection electrode CNE2 may contact the first pixel connection electrode CNE1 through a second contact hole CNTH2 formed in the first through-layer 121.

[0134] The second through layer 123 may be positioned on the second pixel connection electrode CNE2 and the first through layer 121. The second through layer 123 may cover the second pixel connection electrode CNE2 and the first through layer 121. The second through layer 123 may include an organic material. As an example, the second through layer 123 may include an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. The second through layer 123 may include a third contact hole CNTH3 through which the pixel electrode AE ​​of the light emitting element ED penetrates.

[0135] The display element layer 150 may be located on the thin film transistor layer 130. The display element layer 150 may include a light emitting element ED and a pixel defining layer 151.

[0136] The light emitting element ED may include a first light emitting element ED1, a second light emitting element ED2, and a third light emitting element ED3 that overlap the first emission area EA1, the second emission area EA2, and the third emission area EA3, respectively. Figure 7 The first light emitting element ED1 and the third light emitting element ED3 have been shown and described, but the second light emitting element ED2 may also have the same structure and features as those of the first light emitting element ED1 and the third light emitting element ED3.

[0137] For example, the first light emitting element ED1 may overlap the first emission area EA1, the second light emitting element ED2 may overlap the second emission area EA2, and the third light emitting element ED3 may overlap the third emission area EA3. In addition, the first light emitting element ED1 may include a first pixel electrode AE1, a first light emitting layer EL1, and a common electrode CE, the second light emitting element ED2 may include a second pixel electrode AE2, a second light emitting layer EL2, and a common electrode CE, and the third light emitting element ED3 may include a third pixel electrode AE3, a third light emitting layer EL3, and a common electrode CE.

[0138] The pixel electrode AE ​​may be located on the second through layer 123 in a portion overlapping with each emission area EA. As an example, the pixel electrode AE ​​may include a first pixel electrode AE1 overlapping with the first emission area EA1, a second pixel electrode AE2 overlapping with the second emission area EA2, and a third pixel electrode AE3 overlapping with the third emission area EA3. Figure 7 The first pixel electrode AE1 and the third pixel electrode AE3 have been shown and described in the drawings, but the second pixel electrode AE2 may also have the same structure and features as those of the first pixel electrode AE1 and the third pixel electrode AE3.

[0139] The pixel electrode AE ​​may be electrically connected to the drain electrode DE of the thin film transistor TFT through the first pixel connection electrode CNE1 and the second pixel connection electrode CNE2. The pixel electrode AE ​​may be made of a metal having high electrical conductivity. As an example, the pixel electrode AE ​​may have a stacked film structure in which a material having a high work function (such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or indium oxide (In 2 O 3)) and a layer made of a reflective material such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or a mixture thereof. The layer made of a material having a high work function may be located above the layer made of the reflective material, and thus may be located close to the light-emitting layers EL1, EL2, and EL3. As an example, the pixel electrode AE ​​may have ITO / Mg, ITO / MgF 2 , ITO / Ag and ITO / Ag / ITO multilayer structures, but not limited thereto.

[0140] The pixel defining layer 151 may define the emission area EA and the non-emission area NLA. The pixel defining layer 151 may expose a portion of the pixel electrode AE ​​on the second through layer 123 and may cover an edge of the pixel electrode AE. The pixel defining layer 151 may be located in the third contact hole CNTH3. That is, the third contact hole CNTH3 may be filled with the pixel defining layer 151.

[0141] The pixel defining layer 151 may include an organic material. As an example, the pixel defining layer 151 may include an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0142] The light emitting layer EL may be positioned on the pixel electrode AE ​​in a portion overlapping the first emission region EA1, the second emission region EA2, and the third emission region EA3. As an example, the light emitting layer EL may include a first light emitting layer EL1 overlapping the first emission region EA1, a second light emitting layer EL2 overlapping the second emission region EA2, and a third light emitting layer EL3 overlapping the third emission region EA3. For ease of explanation, Figure 7 The first light emitting layer EL1 and the third light emitting layer EL3 have been shown and described in the drawings, but the second light emitting layer EL2 may also have the same structure and features as those of the first light emitting layer EL1 and the third light emitting layer EL3.

[0143] The light emitting layer EL may include an organic material that emits light of a color (e.g., a predetermined color). For example, the light emitting layer EL may include a hole transport layer, an organic material layer, and an electron transport layer. The organic material layer may include a host and a dopant. The organic material layer may include a material for emitting light (e.g., a predetermined light), and may be formed using a phosphorescent material or a fluorescent material.

[0144] The common electrode CE may be located on the light emitting layer EL and the pixel defining layer 151. The common electrode CE may be a common layer formed entirely on the first light emitting layer EL1, the second light emitting layer EL2, and the third light emitting layer EL3 and the pixel defining layer 151. The common electrode CE may include a transparent conductive material to emit light generated from the light emitting layer EL. The common electrode CE may receive a common voltage or a low potential voltage. When the pixel electrode AE ​​receives a voltage corresponding to the data voltage and the common electrode CE receives a low potential voltage, a potential difference is formed between the pixel electrode AE ​​and the common electrode CE, so that the light emitting layer EL may emit light.

[0145] The common electrode CE may be made of a transparent conductive material (TCO) such as ITO or IZO through which light can be transmitted, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the common electrode CE is made of a semi-transmissive conductive material, the emission efficiency may be improved through the microcavity.

[0146] The thin film encapsulation layer 170 may be located on the display element layer 150. The thin film encapsulation layer 170 may include at least one inorganic film to reduce or prevent oxygen or moisture from penetrating into the display element layer 150. In addition, the thin film encapsulation layer 170 may include at least one organic film to protect the display element layer 150 from foreign matter (such as dust). The thin film encapsulation layer 170 may include a first encapsulation layer 171, a second encapsulation layer 173, and a third encapsulation layer 175. The first encapsulation layer 171 may be located on the common electrode CE, the second encapsulation layer 173 may be located on the first encapsulation layer 171, and the third encapsulation layer 175 may be located on the second encapsulation layer 173.

[0147] The first encapsulation layer 171 and the third encapsulation layer 175 may be inorganic films. As an example, the first encapsulation layer 171 and the third encapsulation layer 175 may be formed as a plurality of films in which one or more inorganic films of silicon nitride layer, silicon oxynitride layer, silicon oxide layer, titanium oxide layer, and aluminum oxide layer are alternately stacked.

[0148] The second encapsulation layer 173 may be an organic film. As an example, the second encapsulation layer 173 may include an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0149] The touch sensor layer 180 may be located on the thin film encapsulation layer 170. The touch sensor layer 180 may include a touch buffer layer 181, a first touch electrode 182, a touch insulating layer 183, a second touch electrode 184, and a touch protection layer 185.

[0150] The touch buffer layer 181 may be located on the thin film encapsulation layer 170. The touch buffer layer 181 may include at least one inorganic film. For example, the touch buffer layer 181 may be formed as a plurality of films in which one or more inorganic films of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. The touch buffer layer 181 may be omitted.

[0151] The first touch electrode 182 may be located in a portion overlapping the non-emission area NLA and may be positioned on the touch buffer layer 181. The first touch electrode 182 may include a first connection electrode BE1. As described above, the first connection electrode BE1 may be used to connect the adjacent driving electrode TE (see Figure 5 ) are electrically connected to each other. The first touch electrode 182 according to one or more embodiments may have a multi-layer structure including copper (Cu). Details thereof will be described later.

[0152] The touch insulating layer 183 may be located on the touch buffer layer 181 and the first touch electrode 182. The touch insulating layer 183 may insulate the first touch electrode 182 and the second touch electrode 184 from each other. The touch insulating layer 183 may be formed as an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0153] The second touch electrode 184 may be located in a portion overlapping the non-emission area NLA and may be positioned on the touch insulation layer 183. The second touch electrode 184 may include a second connection electrode BE2, a drive electrode TE, and a sensing electrode RE. As described above, the second connection electrode BE2 may be used to electrically connect adjacent sensing electrodes RE to each other. The second touch electrode 184 according to one or more embodiments may have a multilayer structure including copper (Cu). The details thereof will be described later.

[0154] The touch protection layer 185 may be located on the touch insulating layer 183 and the second touch electrode 184. The touch protection layer 185 may be used to flatten the profile of the underlying structure. The touch protection layer 185 may include at least one of an inorganic film and an organic film. The inorganic film may be a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic film may include an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0155] The light blocking layer BM may be located in a portion overlapping the non-emission area NLA, and may be located on the touch sensor layer 180. The light blocking layer BM may overlap the pixel defining layer 151, the first touch electrode 182, and the second touch electrode 184. The light blocking layer BM may reduce or prevent color mixing due to penetration of visible light between the first emission area EA1, the second emission area EA2, and the third emission area EA3 to improve the color gamut of the display device 10.

[0156] The light blocking layer BM may include a light absorbing material. As an example, the light blocking layer BM may include an inorganic black pigment or an organic black pigment. The inorganic black pigment may be carbon black, and the organic black pigment may include at least one of lactam black, perylene black, and aniline black, but the present disclosure is not limited thereto.

[0157] The color filter layer 190 may be located on each of the touch protection layer 185 and the light blocking layer BM. The color filter layer 190 may include a first color filter 191, a second color filter 193, and a third color filter 195 corresponding to the first emission area EA1, the second emission area EA2, and the third emission area EA3, respectively. The first color filter 191, the second color filter 193, and the third color filter 195 may include a colorant (such as a dye or pigment for absorbing light of a wavelength band other than the light of the corresponding wavelength band), and may be positioned corresponding to the color of the light emitted from the emission areas EA1, EA2, and EA3. For example, the first color filter 191 may be a red color filter that overlaps with the first emission area EA1 and transmits only the first light as red light. The second color filter 193 may be a green color filter that overlaps with the second emission area EA2 and transmits only the second light as green light, and the third color filter 195 may be a blue color filter that overlaps with the third emission area EA3 and transmits only the third light as blue light.

[0158] Figure 8 yes Figure 7 An enlarged cross-sectional view of region C in FIG. Figure 8 yes Figure 7 Schematic cross-sectional view of the second touch electrode 184 in FIG.

[0159] Reference Figure 8 According to one or more embodiments, the second touch electrode 184 may include a first conductive layer R1, a second conductive layer R2, and a third conductive layer R3 stacked in a third direction (Z-axis direction), and a metal oxide layer R4 located on the second conductive layer R2 in the first direction (X-axis direction) (for example, located on the side of the second conductive layer R2 in the first direction (X-axis direction)). Figure 8 The sensing electrodes RE have been shown and described in , but the second touch electrodes 184 according to one or more embodiments may all have the same structure and features.

[0160] The first conductive layer R1 according to one or more embodiments may be positioned on the touch insulating layer 183. The first conductive layer R1 may have high adhesive strength with the touch insulating layer 183. For example, the first conductive layer R1 may have high adhesive strength with an inorganic insulating material included in the touch insulating layer 183.

[0161] In some embodiments, the adhesive strength between the first conductive layer R1 and the touch insulation layer 183 may be higher than the adhesive strength between the touch insulation layer 183 and the metal oxide layer R4 .

[0162] The first conductive layer R1 may include a conductive metal material. As an example, the first conductive layer R1 may include a copper (Cu)-magnesium (Mg)-aluminum (Al) alloy (Cu-Mg-Al alloy). As an example, in the case where the first conductive layer R1 includes a copper (Cu)-magnesium (Mg)-aluminum (Al) alloy (Cu-Mg-Al alloy), when the total number of atoms in the first conductive layer R1 is defined as 100 at %, the sum of the number of atoms of magnesium (Mg) and aluminum (Al) may be approximately 10 at % or less.

[0163] In some embodiments, the side surface R1c of the first conductive layer R1 may be covered by a metal oxide layer R4 which will be described later. Details thereof will be described later.

[0164] The second conductive layer R2 according to one or more embodiments may be located on the first conductive layer R1 so as to contact the first conductive layer R1. The second conductive layer R2 may include a low resistance metal material. The second conductive layer R2 according to one or more embodiments may include copper (Cu).

[0165] In some embodiments, the second conductive layer R2 may include a lower surface R2a, an upper surface R2b, and a side surface R2c. The lower surface R2a of the second conductive layer R2 may be a surface in contact with the first conductive layer R1, and the upper surface R2b of the second conductive layer R2 may be a surface opposite to the lower surface R2a and in contact with the third conductive layer R3. In addition, the side surface R2c of the second conductive layer R2 may be a surface that connects the upper surface R2b and the lower surface R2a to each other. The side surface R2c of the second conductive layer R2 may contact the metal oxide layer R4 and may be completely covered by the metal oxide layer R4.

[0166] In some embodiments, the height Hr1 of the first conductive layer R1 in the third direction (Z-axis direction) may be less than the height Hr2 of the second conductive layer R2 in the third direction (Z-axis direction). As an example, the height Hr1 of the first conductive layer R1 may be or greater and or less, and the height Hr2 of the second conductive layer R2 may be or greater and or smaller, but the present disclosure is not limited thereto.

[0167] The third conductive layer R3 according to one or more embodiments may be located on the second conductive layer R2 so as to contact the second conductive layer R2. The third conductive layer R3 according to one or more embodiments may include a metal material having an anti-oxidation treatment. In other words, the third conductive layer R3 may have oxidation resistance. As an example, the third conductive layer R3 may include a molybdenum (Mo)-titanium (Ti)-nickel (Ni) alloy (MTD alloy). As an example, in the case where the third conductive layer R3 includes a molybdenum (Mo)-titanium (Ti)-nickel (Ni) alloy (MTD alloy), when the total number of atoms in the third conductive layer R3 is defined as 100at%, the number of atoms of each of molybdenum (Mo), titanium (Ti) and nickel (Ni) may be approximately 25at% or greater and approximately 35at% or less.

[0168] In some embodiments, the third conductive layer R3 may include a lower surface R3a, an upper surface R3b, and a side surface R3c. The lower surface R3a of the third conductive layer R3 may be a surface that contacts the second conductive layer R2, and the upper surface R3b of the third conductive layer R3 may be a surface that is opposite to the lower surface R3a and contacts the touch protection layer 185. The side surface R3c of the third conductive layer R3 may be a surface that connects the upper surface R3b and the lower surface R3a to each other.

[0169] In some embodiments, the lower surface R3a of the third conductive layer R3 may include a first portion a1, a second portion a2, and a third portion a3 corresponding to the portion with which the lower surface R3a contacts. The first portion a1 may be a portion contacting the second conductive layer R2, the second portion a2 may be a portion contacting the metal oxide layer R4, and the third portion a3 may be a portion contacting the touch protection layer 185. The first portion a1 may be positioned between the plurality of second portions a2.

[0170] The side surface R3c included in the third conductive layer R3 may protrude in the first direction (X-axis direction) more than the side surface R2c of the second conductive layer R2. Therefore, an undercut UC may be formed between the third conductive layer R3 and the side surface R2c of the second conductive layer R2. Figure 7 , a direction in which the side surface R3c of the third conductive layer R3 protrudes may be a direction toward the emission area EA.

[0171] In some embodiments, the height Hr3 of the third conductive layer R3 in the third direction (Z-axis direction) may be less than the height Hr2 of the second conductive layer R2 in the third direction (Z-axis direction). As an example, the height Hr3 of the third conductive layer R3 may be approximately or greater and approximately or smaller, but not limited thereto.

[0172] The metal oxide layer R4 according to one or more embodiments may be located on the side surface R2c of the second conductive layer R2 so as to contact the side surface R2c of the second conductive layer R2, and may completely cover the side surface R2c of the second conductive layer R2. In addition, the metal oxide layer R4 of the display device 10 may be located on the side surface R1c of the first conductive layer R1 so as to contact the side surface R1c of the first conductive layer R1, and may cover a portion of the side surface R1c of the first conductive layer R1.

[0173] In some embodiments, the metal oxide layer R4 may include a lower surface R4a, an upper surface R4b, a first side surface R4c, and a second side surface R4d. The lower surface R4a of the metal oxide layer R4 may contact the touch insulating layer 183, and the upper surface R4b of the metal oxide layer R4 is a surface opposite to the lower surface R4a and may contact the third conductive layer R3. In addition, the first side surface R4c of the metal oxide layer R4 may contact the first conductive layer R1 and the second conductive layer R2, and the second side surface R4d of the metal oxide layer R4 is a surface opposite to the first side surface R4c and may contact the touch protection layer 185. In one or more embodiments, an undercut UC may be formed between the third conductive layer R3 and the second side surface R4d of the metal oxide layer R4.

[0174] The metal oxide layer R4 may be formed by forming the first conductive layer R1, the second conductive layer R2, and the third conductive layer R3 and thereafter performing an oxygen plasma treatment (O 2 The metal oxide layer R4 is not formed by depositing a separate material, but may be formed by performing oxygen plasma treatment to oxidize copper (Cu) included in the first conductive layer R1 and the second conductive layer R2. However, the third conductive layer R3 of the display device 10 may have oxidation resistance, and therefore, the metal oxide layer R4 may not be formed on the side surface R3c and the lower surface R3a of the third conductive layer R3 of the display device 10. The manufacturing process will be described later.

[0175] The metal oxide layer R4 according to one or more embodiments may include copper oxide (CuO x ). Since copper oxide generally has a physical property of turning black, the metal oxide layer R4 may have a very high extinction coefficient and a low visible light reflectivity in the visible light region. As an example, the metal oxide layer R4 may have a reflectivity of about 6% or less in the visible light region, but is not limited thereto.

[0176] In some embodiments, the metal oxide layer R4 may have a substantially uniform width Wr4 in the first direction (X-axis direction). This may mean that the metal oxide layer R4 is formed by oxygen plasma treatment. The width Wr4 of the metal oxide layer R4 may have a uniformity of about 5% or less. As an example, the width Wr4 of the metal oxide layer R4 may be about or greater and approximately According to an embodiment, the width may be referred to as thickness, area, etc.

[0177] By including the metal oxide layer R4 on the side surface R2c of the second conductive layer R2 including copper, the display device 10 can solve the reflection defect caused by the touch electrode and can solve the reliability defect that a partial area of ​​the display device 10 appears reddish when observed from the outside of the display device 10. In addition, by forming the metal oxide layer R4 through oxygen plasma treatment, the display device 10 can be easily manufactured.

[0178] In addition, the display device 10 according to one or more embodiments may have physical reliability by including the first conductive layer R1 having high adhesive strength with the inorganic layer, and may have electrical stability by including the third conductive layer R3 having oxidation resistance.

[0179] Fig. 9 It is shown Figure 8 FIG. 1 is a plan view of the arrangement of the second conductive layer R2 and the metal oxide layer R4.

[0180] Reference Fig. 9 , the metal oxide layer R4 according to one or more embodiments may be located in a portion overlapping the non-emission area NLA in a plan view, and may expose the second conductive layer R2 while completely surrounding the second conductive layer R2 in a plan view. In other words, the metal oxide layer R4 may expose the second conductive layer R2 and may form a mesh shape in a plan view. The second conductive layer R2 and the metal oxide layer R4 exposed in a plan view may be completely covered by the touch protection layer 185.

[0181] Fig.10 yes Figure 7 An enlarged cross-sectional view of region E in FIG. Fig.10 yes Figure 7 Schematic cross-sectional view of the first touch electrode 182 in FIG.

[0182] Reference Fig.10 According to one or more embodiments, the first touch electrode 182 may include a first conductive layer R5, a second conductive layer R6, and a third conductive layer R7 stacked in a third direction (Z-axis direction), and a metal oxide layer R8 located on the second conductive layer R6 in the first direction (X-axis direction). Fig.10 The first connection electrode BE1 has been shown and described in the drawings, but all touch electrodes included in the first touch electrode 182 may have the same structure and features.

[0183] The first conductive layer R5 according to one or more embodiments may be positioned on the touch buffer layer 181. The first conductive layer R5 may have high adhesive strength with the touch buffer layer 181. In other words, the first conductive layer R5 may have high adhesive strength with the inorganic insulating material included in the touch buffer layer 181.

[0184] The first conductive layer R5 included in the first touch electrode 182 may have the same material and height as those of the first conductive layer R1 included in the second touch electrode 184. As an example, the first conductive layer R5 may include a copper (Cu)-magnesium (Mg)-aluminum (Al) alloy (Cu-Mg-Al alloy). A portion of a side surface R5c of the first conductive layer R5 may be covered by a metal oxide layer R8. Repeated descriptions are omitted.

[0185] The second conductive layer R6 included in the first touch electrode 182 may have the same material and height as those of the second conductive layer R2 included in the second touch electrode 184. As an example, the second conductive layer R6 may include copper (Cu). The side surface R6c of the second conductive layer R6 may be completely covered by the metal oxide layer R8. Repeated description is omitted.

[0186] The third conductive layer R7 included in the first touch electrode 182 may have the same material, structure, and features as those of the third conductive layer R3 included in the second touch electrode 184. As an example, the third conductive layer R7 may include a molybdenum (Mo)-titanium (Ti)-nickel (Ni) alloy (MTD alloy). In addition, an undercut UC may be formed between the third conductive layer R7 and the side surface R6c of the second conductive layer R6.

[0187] In some embodiments, the lower surface R7a of the third conductive layer R7 may include a first portion a5, a second portion a6, and a third portion a7 corresponding to a portion contacting the lower surface R7a. The first portion a5 may be a portion contacting the second conductive layer R6, the second portion a6 may be a portion contacting the metal oxide layer R8, and the third portion a7 may be a portion contacting the touch insulating layer 183. The first portion a5 may be positioned between a plurality of second portions a6.

[0188] The metal oxide layer R8 included in the first touch electrode 182 may have the same material and width as those of the metal oxide layer R4 included in the second touch electrode 184. The metal oxide layer R8 may be located on the side surface R5c of the first conductive layer R5 and the side surface R6c of the second conductive layer R6 so as to contact the side surface R5c of the first conductive layer R5 and the side surface R6c of the second conductive layer R6.

[0189] In some embodiments, the metal oxide layer R8 may include a lower surface R8a, an upper surface R8b, a first side surface R8c, and a second side surface R8d. The lower surface R8a of the metal oxide layer R8 may contact the touch buffer layer 181, and the upper surface R8b of the metal oxide layer R8 is a surface opposite to the lower surface R8a and may contact the third conductive layer R7. In addition, the first side surface R8c of the metal oxide layer R8 may contact the first conductive layer R5 and the second conductive layer R6, and the second side surface R8d of the metal oxide layer R8 is a surface opposite to the first side surface R8c and may contact the touch insulating layer 183. In one or more embodiments, an undercut UC may be formed between the third conductive layer R7 and the second side surface R8d of the metal oxide layer R8. Repeated descriptions are omitted.

[0190] Fig.11 According to one or more other embodiments Figure 7 An enlarged cross-sectional view of region C in FIG.

[0191] Reference Fig.11 , the second touch electrode 184 of the display device 30 may have Figure 8 The structures and features of the second touch electrodes 184 of the display device 10 shown in FIG. 1 are different from those of the second touch electrodes 184 of the display device 10 shown in FIG.

[0192] In the display device 30, the metal oxide layer R4 included in the second touch electrode 184 includes an irregularly arranged uneven surface. Fig.11 It has been shown that the second side surface R4d includes uneven surfaces that are irregularly arranged as a whole, but the present disclosure is not limited thereto. In the display device 30, the second side surface R4d may also include an uneven surface only in at least a partial region of the second side surface R4d.

[0193] An uneven surface included in the metal oxide layer R4 may be formed according to process conditions when oxygen plasma is injected in the manufacturing process of the display device 30. As an example, the process conditions may include a gas amount, a gas injection time, and a position of a substrate.

[0194] By including the metal oxide layer R4 on the side surface R2c of the second conductive layer R2 including copper and having unevenness, the display device 30 can solve the reflection defect caused by the touch electrode and can solve the reliability defect that a partial area of ​​the display device 30 appears reddish when observed from the outside of the display device 30. In addition, by forming the metal oxide layer R4 through oxygen plasma treatment, the display device 30 can be easily manufactured.

[0195] Figures 12 to 15 It is shown that the Figure 8 10 is a view of a manufacturing process of the second touch electrode 184 in the display device 10. Hereinafter, a method of manufacturing the second touch electrode 184 included in the display device 10 will be described. The following description is only a description of some manufacturing processes of the second touch electrode 184, and the process for forming the components described with reference to the present disclosure may be additionally performed before or after each operation. In addition, the manufacturing process of the second touch electrode 184 known in the art may be additionally performed before or after each operation described below.

[0196] First, refer to Fig.12 , a first conductive material layer R1L, a second conductive material layer R2L, and a third conductive material layer R3L are formed on the touch insulating layer 183 of the display device 10. The first conductive material layer R1L, the second conductive material layer R2L, and the third conductive material layer R3L may be sequentially stacked in the third direction (Z-axis direction).

[0197] Next, a plurality of photoresists PR are formed on the third conductive material layer R3L. The plurality of photoresists PR may be spaced apart from each other, and portions of the third conductive material layer R3L that do not overlap with the plurality of photoresists PR may be exposed.

[0198] Then, refer to Fig.13 , a first etching process (first etching) is performed using a plurality of photoresists PR as a mask. As an example, a wet etching process may be performed as the first etching process (first etching). In this process, a portion of the third conductive material layer R3L positioned in a portion where the photoresist PR is not formed may be removed.

[0199] The first conductive material layer R1L, the second conductive material layer R2L, and the third conductive material layer R3L included in the display device 10 may include materials having different etching rates. As an example, the first conductive material layer R1L and the third conductive material layer R3L may have a lower etching rate than the second conductive material layer R2L with respect to the etchant used in the first etching process (first etching). Fig.14As shown in , the first conductive material layer R1L and the third conductive material layer R3L may include a protrusion portion P protruding from a side surface R2c of the second conductive material layer R2L.

[0200] In this process, the shapes of the first conductive material layer R1L, the second conductive material layer R2L and the third conductive material layer R3L can be Figure 8 The shapes of the first conductive layer R1, the second conductive layer R2 and the third conductive layer R3 shown in FIG.

[0201] Next, refer to Fig.14 and Fig.15 , the display device 10 may be placed in a deposition chamber and an oxygen plasma treatment (O 2 plasma treatment).

[0202] In the present process, the metal oxide layer R4 may be formed on the side surface R1c of the first conductive layer R1 and the side surface R2c of the second conductive layer R2. The metal oxide layer R4 is not formed by a separate deposition process, but may be formed by performing oxygen plasma treatment in a state where the first conductive layer R1, the second conductive layer R2, and the third conductive layer R3 are formed to oxidize copper (Cu) included in the first conductive layer R1 and the second conductive layer R2. However, the third conductive layer R3 of the display device 10 has oxidation resistance, and therefore, the metal oxide layer R4 may not be formed on the side surface R3c of the third conductive layer R3.

[0203] In this process, the metal oxide layer R4 may be formed to have a substantially uniform width Wr4. The width Wr4 of the metal oxide layer R4 may be adjusted by plasma process time and power, etc. Thus, the second touch electrode 184 included in the display device 10 may be formed.

[0204] Fig.16 According to one or more other embodiments Figure 7 An enlarged cross-sectional view of region C in FIG.

[0205] Reference Fig.16 , the second touch electrode 184 of the display device 50 may have Figure 8 The structure and features of the second touch electrode 184 of the display device 10 shown in FIG. 1 are different from those of the second touch electrode 184 of the display device 10 shown in FIG. Fig.16 1 and 18. Although the sensing electrode RE of the second touch electrode 184 is shown and described in the figure, both the second touch electrode 184 and the first touch electrode 182 of the display device 50 may have the same structure and features. Hereinafter, the common description of the display device 10 and the display device 50 is omitted, and the difference between the display device 10 and the display device 50 will be described later.

[0206] The first conductive layer S1 of the display device 50 may have high adhesive strength with the touch insulating layer 183 and may have oxidation resistance. As an example, the first conductive layer S1 of the display device 50 may include at least one of a molybdenum (Mo)-titanium (Ti)-nickel (Ni) alloy (MTD alloy), an indium (In)-gallium (Ga)-zinc (Zn) oxide (IGZO), and an indium (In)-zinc (Zn) oxide (IZO). In the case where the first conductive layer S1 includes a molybdenum (Mo)-titanium (Ti)-nickel (Ni) alloy (MTD alloy), when the total number of atoms in the first conductive layer S1 is defined as 100at%, the number of atoms of each of molybdenum (Mo), titanium (Ti), and nickel (Ni) may be about 25at% or more and about 35at% or less.

[0207] In some embodiments, the first conductive layer S1 of the display device 50 may include an upper surface S1b and a side surface S1c. The side surface S1c of the first conductive layer S1 may protrude further than the side surface S2c of the second conductive layer S2 and may contact the touch protection layer 185.

[0208] Since the first conductive layer S1 of the display device 50 has oxidation resistance, the metal oxide layer S4 may not be formed on the side surface S1c of the first conductive layer S1 even if the first conductive layer S1 is exposed to oxygen plasma treatment.

[0209] The upper surface S1b of the first conductive layer S1 is a surface contacting the second conductive layer S2, and may include a first portion sb1 and a second portion sb2 according to a structure contacting therewith. The first portion sb1 may be a portion contacting the second conductive layer S2, and the second portion sb2 may be a portion contacting the metal oxide layer S4. The first portion sb1 of the display device 50 may be positioned between a plurality of second portions sb2.

[0210] The second conductive layer S2 of the display device 50 may be located on the first conductive layer S1 so as to contact the first conductive layer S1. The second conductive layer S2 may include a low-resistance metal material. The second conductive layer S2 of the display device 50 may include copper (Cu). However, in addition to copper (Cu), the second conductive layer S2 of the display device 50 may further include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni) or neodymium (Nd), etc.

[0211] In some embodiments, the second conductive layer S2 may include a side surface S2c. The side surface S2c of the second conductive layer S2 may be a surface in contact with the metal oxide layer S4 and may be completely covered by the metal oxide layer S4. The side surface S2c included in the second conductive layer S2 of the display device 50 may be recessed in the first direction (X-axis direction) than the side surface S1c of the first conductive layer S1.

[0212] The third conductive layer S3 of the display device 50 may be located on the second conductive layer S2 so as to contact the second conductive layer S2. The third conductive layer S3 of the display device 50 may have the same structure and features as those of the third conductive layer S3 included in the display device 10. Repeated descriptions are omitted.

[0213] In some embodiments, the third conductive layer S3 may include a lower surface S3a, an upper surface S3b, and a side surface S3c. For example, the lower surface S3a of the third conductive layer S3 may be a surface that contacts the second conductive layer S2, and the upper surface S3b of the third conductive layer S3 may be a surface that is opposite to the lower surface S3a and contacts the touch protection layer 185. The side surface S3c included in the third conductive layer S3 may protrude in the first direction (X-axis direction) than the side surface S2c included in the second conductive layer S2. Therefore, an undercut UC may be formed between the third conductive layer S3 and the side surface S2c of the second conductive layer S2.

[0214] In some embodiments, the lower surface S3a of the third conductive layer S3 may include a first portion sa1, a second portion sa2, and a third portion sa3, depending on the structure with which the lower surface S3a contacts. In the display device 50, the first portion sa1 may be a portion contacting the second conductive layer S2, the second portion sa2 may be a portion contacting the metal oxide layer S4, and the third portion sa3 may be a portion contacting the touch protection layer 185. The first portion sa1 may be positioned between a plurality of second portions sa2, and the first portion sa1 and the second portion sa2 may be positioned between a plurality of third portions sa3.

[0215] The metal oxide layer S4 of the display device 50 may be located on the side surface S2c of the second conductive layer S2 so as to contact the side surface S2c of the second conductive layer S2, and may contact the upper surface S1b of the first conductive layer S1 and the lower surface S3a of the third conductive layer S3 in the third direction (Z-axis direction).

[0216] In some embodiments, the metal oxide layer S4 may include a lower surface S4a, an upper surface S4b, a first side surface S4c, and a second side surface S4d. The lower surface S4a of the metal oxide layer S4 may contact the first conductive layer S1, and the upper surface S4b of the metal oxide layer S4 is a surface opposite to the lower surface S4a and may contact the third conductive layer S3. In addition, the first side surface S4c of the metal oxide layer S4 may contact the second conductive layer S2, and the second side surface S4d of the metal oxide layer S4 is a surface opposite to the first side surface S4c and may contact the touch protection layer 185.

[0217] In some embodiments, the width Wr4 of the metal oxide layer S4 may be substantially uniform. Description of repeated contents is omitted.

[0218] The metal oxide layer S4 of the display device 50 may be formed by forming the first conductive layer S1, the second conductive layer S2, and the third conductive layer S3 and thereafter performing oxygen plasma treatment as a subsequent process in the manufacturing process of the display device 50. In the manufacturing process of the display device 50, the first conductive layer S1 and the third conductive layer S3 have oxidation resistance, and therefore, the metal oxide layer S4 may not be formed on the side surface S1c of the first conductive layer S1 and the side surface S3c of the third conductive layer S3.

[0219] By including the metal oxide layer S4 on the second conductive layer S2 including copper, the display device 50 can solve the reflection defect caused by the touch electrode, and can solve the reliability defect that a partial area of ​​the display device 50 is slightly reddish when observed from the outside of the display device 50. In addition, by forming the metal oxide layer S4 through oxygen plasma treatment, the display device 50 can be easily manufactured. In addition, the display device 50 can have physical reliability by including the first conductive layer S1 having high adhesive strength with the inorganic layer, and can have electrical stability by including the first conductive layer S1 and the third conductive layer S3 having oxidation resistance.

[0220] Fig.17 According to one or more other embodiments Figure 7 An enlarged cross-sectional view of region C in FIG.

[0221] Reference Fig.17 The second touch electrode 184 included in the display device 70 may have the same Figure 8 The second touch electrode 184 in the display device 10 shown in FIG. 7 is different from the second touch electrode 184 in the display device 10 in that it does not include Figure 8 Hereinafter, repeated descriptions of the display device 10 and the display device 70 are omitted, and the difference between the display device 10 and the display device 70 will be described later.

[0222] The second touch electrode 184 of the display device 70 may include a first conductive layer R1 and a second conductive layer R2 stacked in the third direction (Z-axis direction) and a metal oxide layer R4 located on the second conductive layer R2 in the first direction (X-axis direction). Fig.17 Although the sensing electrode RE of the second touch electrode 184 is shown and described in FIG. 1 , both the second touch electrode 184 and the first touch electrode 182 of the display device 70 may have the same structure and features.

[0223] The first conductive layer R1 of the display device 70 may be positioned on the touch insulating layer 183. The first conductive layer R1 may have high adhesive strength with the touch insulating layer 183. In other words, the first conductive layer R1 may have high adhesive strength with the inorganic insulating material included in the touch insulating layer 183. The adhesive strength between the first conductive layer R1 of the display device 70 and the touch insulating layer 183 may be higher than the adhesive strength between the second conductive layer R2 and the touch protection layer 185 and between the metal oxide layer R4 and the touch insulating layer 183.

[0224] The first conductive layer R1 may include a conductive metal material. As an example, the first conductive layer R1 may include titanium (Ti). In some embodiments, the first conductive layer R1 may include a side surface R1c. The side surface R1c of the first conductive layer R1 may be covered by a metal oxide layer R4 described later.

[0225] The second conductive layer R2 of the display device 70 may include Figure 8 The material of the second conductive layer R2 of the display device 10 shown in FIG. As an example, the second conductive layer R2 may include copper (Cu).

[0226] In some embodiments, the second conductive layer R2 of the display device 70 may include an upper surface R2b, a lower surface R2a, and a side surface R2c. The lower surface R2a of the second conductive layer R2 may be a surface in contact with the first conductive layer R1, and the upper surface R2b of the second conductive layer R2 may be a surface opposite to the lower surface R2a and in contact with the touch protection layer 185. In addition, the side surface R2c of the second conductive layer R2 may be a surface that connects the upper surface R2b and the lower surface R2a to each other in the first direction (X-axis direction), and may be a surface that contacts the metal oxide layer R4 to be described later. The side surface R2c of the second conductive layer R2 may be completely covered by the metal oxide layer R4.

[0227] The metal oxide layer R4 of the display device 70 may include Figure 8 The material of the metal oxide layer R4 of the display device 10 shown in FIG.

[0228] The metal oxide layer R4 of the display device 70 may be located on the side surface R2c of the second conductive layer R2 so as to contact the side surface R2c of the second conductive layer R2, and may completely cover the side surface R2c of the second conductive layer R2. In addition, the metal oxide layer R4 may be located on the side surface R1c of the first conductive layer R1 so as to contact the side surface R1c of the first conductive layer R1, and may cover a portion of the side surface R1c of the first conductive layer R1.

[0229] The metal oxide layer R4 may not be positioned on the upper surface R2b of the second conductive layer R2. This may be caused by performing a process of forming a photoresist on the second conductive layer R2 and then forming the metal oxide layer R4 in the manufacturing process of the display device 70. The manufacturing process will be described later.

[0230] In some embodiments, the metal oxide layer R4 may include a lower surface R4a, an upper surface R4b, a first side surface R4c, and a second side surface R4d. The lower surface R4a of the metal oxide layer R4 may contact the touch insulating layer 183, and the upper surface R4b of the metal oxide layer R4 is a surface opposite to the lower surface R4a and may contact the touch protection layer 185. In addition, the first side surface R4c of the metal oxide layer R4 may contact the first conductive layer R1 and the second conductive layer R2, and the second side surface R4d of the metal oxide layer R4 is a surface opposite to the first side surface R4c and may contact the touch protection layer 185.

[0231] By including the metal oxide layer R4 on the second conductive layer R2 including copper, the display device 70 can solve the reflection defect caused by the touch electrode and can solve the reliability defect that a partial area of ​​the display device 70 appears reddish when observed from the outside of the display device 70. In addition, by forming the metal oxide layer R4 through oxygen plasma treatment, the display device 70 can be easily manufactured.

[0232] Figures 18 to 22 It is shown that the Fig.17 FIG. 1 is a view of a manufacturing process of the second touch electrode 184 in the display device 70 of FIG. 1. Hereinafter, a method of manufacturing the second touch electrode 184 included in the display device 70 will be described. The following description is only a description of some manufacturing processes of the second touch electrode 184, and the process for forming the components described with reference to the present disclosure may be additionally performed before or after each operation. In addition, the manufacturing process of the second touch electrode 184 known in the art may be additionally performed before or after each operation described below.

[0233] First, refer to Fig.18 and Fig.19 , a first conductive material layer R1L and a second conductive material layer R2L are formed on the touch insulating layer 183 of the display device 70. The first conductive material layer R1L and the second conductive material layer R2L may be sequentially stacked in the third direction (Z-axis direction).

[0234] Next, a plurality of photoresists PR are formed on the second conductive material layer R2L. The plurality of photoresists PR may be spaced apart from each other, and portions of the second conductive material layer R2L that do not overlap with the plurality of photoresists PR may be exposed.

[0235] Subsequently, a first etching process (first etching) is performed using the plurality of photoresists PR as a mask. As an example, a wet etching process may be performed as the first etching process (first etching). In this process, a portion of the second conductive material layer R2Ld positioned in a portion where the photoresist PR is not formed may be selectively removed. Through this process, a portion of the second conductive material layer R2L may be formed as the second conductive layer R2 of the display device 70, and the first conductive material layer R1L may be retained without being removed.

[0236] Next, refer to Figure 20 to Figure 22 A plurality of photoresists PR are formed on the second conductive layer R2. The plurality of photoresists PR may be spaced apart from each other, and portions of the first conductive material layer R1L that are not overlapped with the plurality of photoresists PR may be exposed.

[0237] Subsequently, a second etching process (second etching) is performed using the plurality of photoresists PR as a mask. As an example, a dry etching process may be performed as the second etching process (second etching). In this process, a portion of the first conductive material layer R1L located in a portion where the photoresist PR is not formed may be removed, and thus, a Fig.17 The first conductive layer R1 of the display device 70 shown in FIG.

[0238] In the present process, the first conductive layer R1 may have a protruding portion P protruding from a side surface R2c of the second conductive layer R2.

[0239] Next, the display device 70 may be placed in a deposition chamber, and an oxygen plasma treatment (O 2 Plasma treatment). In this process, the metal oxide layer R4 may be formed on the side surface R1c of the first conductive layer R1 and the side surface R2c of the second conductive layer R2. The metal oxide layer R4 is not formed by a separate deposition process, but may be formed by oxidizing copper (Cu) included in the first conductive layer R1 and the second conductive layer R2. In this process, the metal oxide layer R4 may be formed to have a substantially uniform width Wr4. The width Wr4 of the metal oxide layer R4 may be adjusted by plasma process time and power, etc.

[0240] In this process, the upper surface R2b of the second conductive layer R2 is covered with the photoresist PR, and thus, the metal oxide layer R4 may not be formed on the second conductive layer R2. Therefore, the second touch electrode 184 included in the display device 70 may be formed.

[0241] The above content is an explanation of some embodiments of the present disclosure and should not be interpreted as limiting the present disclosure. Although some embodiments have been described, it will be easily understood by those skilled in the art that various modifications in the embodiments are possible without departing from the spirit and scope of the present disclosure. It will be understood that, unless otherwise described, the description of the features or aspects within each embodiment should generally be considered to be applicable to other similar features or aspects in other embodiments. Therefore, as will be apparent to those of ordinary skill in the art, unless otherwise specifically noted, the features, characteristics and / or elements described in conjunction with the specific embodiments can be used alone or in combination with the features, characteristics and / or elements described in conjunction with other embodiments. Therefore, it should be understood that the above content is an explanation of various example embodiments and should not be interpreted as being limited to the specific embodiments disclosed herein, and various modifications to the disclosed embodiments and other example embodiments are intended to be included within the spirit and scope of the present disclosure defined in the attached claims and their equivalents.

Claims

1. A display device, wherein: The display device comprises: a substrate, including an emitting region and a non-emitting region; a touch insulating layer, above the substrate; A touch electrode, which is above the touch insulating layer, overlaps the non-emitting area and includes: A first conductive layer, contacting the touch insulating layer; a second conductive layer over the first conductive layer and comprising a conductive material different from that of the first conductive layer; and a metal oxide layer on a side surface of the second conductive layer facing the emission region, contacting the side surface of the second conductive layer and not contacting an upper surface of the second conductive layer facing the touch protection layer; and The touch protection layer is above the touch insulation layer and the touch electrodes.

2. The display device according to claim 1, wherein: The second conductive layer includes copper, and Wherein, the metal oxide layer comprises copper oxide.

3. The display device according to claim 2, wherein: The metal oxide layer completely covers the side surface of the second conductive layer.

4. The display device according to claim 3, wherein: The width of the metal oxide layer in a direction parallel to the substrate is consistent within 5%.

5. The display device according to claim 4, wherein: A height of the first conductive layer in a direction perpendicular to the substrate is smaller than a height of the second conductive layer in the direction perpendicular to the substrate.

6. The display device according to claim 4, wherein: The first conductive layer includes any one of a molybdenum-titanium-nickel alloy, titanium, and a copper-magnesium-aluminum alloy.

7. The display device according to claim 4, wherein: The first conductive layer includes a protruding portion protruding more than the side surface of the second conductive layer in the direction parallel to the substrate.

8. The display device according to claim 1, wherein: The touch electrode further includes a third conductive layer over the second conductive layer and the metal oxide layer, and the third conductive layer includes a lower surface facing the second conductive layer and the metal oxide layer and forming an undercut.

9. The display device according to claim 8, wherein: The lower surface of the third conductive layer includes: a first portion contacting the second conductive layer; a second portion contacting the metal oxide layer; and a third portion contacting the touch protection layer.

10. The display device according to claim 9, wherein: The second portion is positioned between the first portion and the third portion.

11. The display device according to claim 10, wherein: The third conductive layer includes a molybdenum-titanium-nickel alloy.

12. The display device according to claim 10, wherein: The metal oxide layer contacts a side surface of the first conductive layer.

13. The display device according to claim 10, wherein: The metal oxide layer does not contact side surfaces of the first conductive layer.

14. The display device according to claim 10, wherein: A surface of the metal oxide layer facing the emission region includes an uneven surface.

15. The display device according to claim 1, wherein: The metal oxide layer exposes the second conductive layer and completely surrounds the second conductive layer in a plan view.

16. The display device according to claim 15, wherein: The metal oxide layer has a mesh shape defining openings in a plan view.

17. A method for manufacturing a display device, wherein: The method comprises: forming a first conductive material layer over a substrate including an emitting region and a non-emitting region; forming a second conductive material layer located above the first conductive material layer; forming a photoresist over the second conductive material layer and overlapping the non-emitting region; performing a first etching process to form a second conductive layer; forming a photoresist over the second conductive layer and overlapping the non-emitting region; performing a second etching process to form a first conductive layer; and Oxygen plasma treatment is performed to form a metal oxide layer on a side surface of the first conductive layer and a side surface of the second conductive layer.

18. The method for manufacturing a display device according to claim 17, wherein: The first etching process includes a wet etching process, and Wherein, the second etching process includes a dry etching process.

19. The method for manufacturing a display device according to claim 17, wherein: The first conductive layer includes a protruding portion protruding beyond the side surface of the second conductive layer.

20. The method for manufacturing a display device according to claim 19, wherein: The first conductive layer and the second conductive layer include copper, and Wherein, the metal oxide layer comprises copper oxide.

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