Low-voltage, high-current power distribution method based on dual-loop GANHEMT-magnetic latching relay control

Abstract

This low-voltage, high-current power distribution method is based on dual-loop GANHEMT-magnetic latching relay control. A GaN HEMT power transistor is used as the main switch. Two GAN HEMTs are connected in parallel and bridging the magnetic latching relay and the positive output line of the low-voltage power supply. The drain (D) of the GAN HEMT is connected to the positive output line of the low-voltage power supply, and the source (S) is connected to the input terminal of the low-voltage power supply. The gate (G) of the GAN HEMT is connected to the contact terminal of the magnetic latching relay (4) through a voltage divider resistor. The switching terminal of the magnetic latching relay (4) is grounded through the low-voltage power supply protection circuit. The set coil (9) of the magnetic latching relay (4) is connected in parallel with a set of diodes between the relay energizing voltage circuit (5) and the power distribution control on command input circuit (7). The reset coil (10) of the magnetic latching relay (4) is connected in parallel with another set of diodes between the relay energizing voltage circuit (5) and the power distribution control off command input circuit (8). Effective control and coordination are achieved by including two parts of the power distribution circuit: the power distribution command receiving circuit and the power distribution on circuit, thus realizing low-voltage, high-current power distribution.

Description

Technical Field

[0001] This invention belongs to the IPC classification H02M for conversion between AC and AC, AC and DC, or DC and DC, as well as for devices and control or regulation technologies used with power supplies or similar power supply systems. In particular, it relates to an innovative technology for a low-voltage, high-current power distribution control method suitable for low-loss aerospace power distribution controllers. Background Technology

[0002] The mission of the aerospace power supply and distribution system is to safely and reliably distribute and transmit the electrical energy generated by the power system to various electrical devices on the satellite, and to control the power distribution of each electrical device.

[0003] The power distribution voltage of aerospace power supply and distribution systems is not uniform but is designed and selected according to specific requirements. Currently, the power distribution voltages used in spacecraft cover a wide range from low to high voltage. Spacecraft primary bus distribution voltages include 100V, 42V, and 28V, while secondary distribution commonly uses 5V and ±12V. In solar power systems, solar arrays are the electrical energy source, and batteries are the energy storage devices. The electrical energy generated by the solar arrays and battery banks is modulated to the rated bus voltage under the action of the power regulation and control system. For satellites with power requirements exceeding 25kW, high-voltage solar arrays are required to achieve optimal system quality. In LEO (Low Earth Orbit), considering factors such as leakage current and arc discharge in the high-density space plasma environment, the system voltage is limited to below 200V. However, for GEO (Geostationary Earth Orbit), due to the low plasma density, operation at high voltage after reaching orbit is feasible. The chips used in onboard electrical loads are becoming increasingly integrated, requiring lower and lower power supply voltages while increasing current.

[0004] For aerospace power distribution systems with voltages ranging from +28V, +12V, to +5V, the power distribution circuits typically include two types of switches: magnetic latching relays and PMOS transistors. As the rated current increases, the price of the relays in the equipment also increases significantly, leading to exceptionally high equipment costs. Furthermore, high-current relays generate more heat during operation, requiring larger components to mitigate this heat. Therefore, a common solution for high-current power distribution is to use low-current relays to receive commands from the power distribution controller, while the PMOS transistor handles the high current. However, low-voltage power distribution technology uses a single relay without a PMOS transistor because for the PMOS transistor to conduct and handle high current, its gate-source voltage needs to be above 10V. Without additional measures, voltages below 10V cannot meet the high current requirements of the electric furnace.

[0005] Research has found that existing aerospace power supply and distribution systems, for low-voltage, high-current power distribution technologies (such as those for voltages below 10V), if small relays are still used to receive commands from the power distribution controller, the circuit will be as follows: Figure 1 As shown, due to the low gate-source voltage difference, the PMOS transistor cannot be driven to handle large currents; therefore, expensive, large-specification relays must be used to handle large currents, which affects the performance of manufacturing equipment and results in high product manufacturing costs.

[0006] Therefore, related improvement technologies are rarely disclosed. For example:

[0007] Patent application 201910228365.2 discloses a GaN high-current self-powered DC solid-state circuit breaker and DC power supply system, belonging to the field of DC power supply and distribution. Specifically, it consists of a main switch S and a flyback converter C. The main switch S is made of several solid-state switches S1, S2, ..., S3 made of gallium nitride, a wide-bandgap semiconductor material with consistent performance parameters. n The circuit breakers are connected in parallel and are all normally-on structures. The flyback converter C is a self-excited structure with a wide input voltage range. It relies on the voltage generated across the main switch by the large current in the fault circuit to excite its operation and outputs a stable voltage to drive the parallel semiconductor solid-state switches to operate synchronously, disconnecting the load and DC power supply, thereby protecting the load and power supply. Moreover, the circuit breaker does not require an external power supply during the process of transmitting normal current and disconnecting the load.

[0008] In these improved technologies, gallium nitride (GaN) semiconductor materials are involved. These materials possess advantages such as a wide bandgap, high electron drift velocity, high breakdown field strength, and stable chemical properties, making them ideal materials for fabricating high-frequency, high-power devices. High electron mobility transistors (HEMTs) using GaN semiconductor materials as substrates have advantages such as high output power density, high operating voltage, and high output impedance. They play an increasingly important role in wireless communication and are core components of wireless communication amplifiers. There are many applications, such as:

[0009] Patent application 201811230522.5 relates to a GaN HEMT control circuit, including a gate voltage switching circuit and a gate voltage terminal connected to the gate pin of the GaN HEMT. The gate voltage switching circuit includes a first switching circuit, a second switching circuit, and a third switching circuit. A first terminal of the first switching circuit receives a TDD switching signal, and a second terminal of the first switching circuit is connected to the first terminals of both the second and third switching circuits. A second terminal of the second switching circuit is connected to a gate voltage source, and a third terminal of the second switching circuit is connected to the gate voltage terminal. A second terminal of the third switching circuit is connected to a negative voltage power supply, and a third terminal of the third switching circuit is connected to the gate voltage terminal. The TDD switching signal controls the on / off state of the first switching circuit, which in turn controls the on / off state of the second and third switching circuits, thus switching the voltage at the gate voltage terminal. Based on this structure, the gate voltage of the GaN HEMT can be controlled using the TDD uplink / downlink switching signal, enabling rapid turn-off and turn-on of the GaN HEMT.

[0010] It is evident that the improved technologies that have yielded better results in GaN HEMT applications have not yet addressed the low-voltage, high-current power distribution requirements of the aforementioned aerospace power supply and distribution systems. This technical issue still requires further research and resolution. Summary of the Invention

[0011] This invention proposes a low-voltage, high-current power distribution method based on dual-loop GANHEMT-magnetic latching relay control. It is applicable to centralized and decentralized power distribution in the overall circuit subsystem of aerospace power supplies. By utilizing the low gate-source threshold voltage of GANHEMTs, and setting up dual GANHEMT parallel magnetic latching relays for control, the method effectively controls and coordinates the two parts, including the power distribution command receiving circuit and the power distribution connection circuit, to achieve low-voltage, high-current power distribution and solve the aforementioned problems in the prior art.

[0012] To achieve the above objectives, the present invention provides the following technical solution:

[0013] A GaN HEMT power transistor is used as the main switch. Two GaN HEMTs are connected in parallel and bridging the magnetic latching relay and the positive output line of the low-voltage power supply. The drain (D) of the GaN HEMT is connected to the positive output line of the low-voltage power supply, and the source (S) is connected to the input terminal of the low-voltage power supply. The gate (G) of the GaN HEMT is connected to the contact terminal of the magnetic latching relay through a voltage divider resistor. The magnetic latching relay contains a set coil and a reset coil. The power distribution circuit consists of two parts: a power distribution command receiving circuit and a power distribution connection circuit. These two parts are connected to one end of the switch contact of the magnetic latching relay in the power distribution command receiving circuit through the gate (G) of the GaN HEMT device in the power distribution connection circuit. The set coil of the magnetic latching relay is connected in parallel with a set of diodes between the relay energizing voltage circuit and the power distribution control connection command input circuit. The reset coil of the magnetic latching relay is connected in parallel with another set of diodes between the relay energizing voltage circuit and the power distribution control disconnection command input circuit. The workflow includes: at the same time as the power distribution command is input to the magnetic latching relay command receiver, the power distribution voltage input arrives at the GAN HEMT device, the GAN HEMT device switches on, and then the power distribution voltage is output.

[0014] In this magnetic latching relay, the set coil and reset coil are coils wound in opposite directions. The power distribution control on command input circuit is connected to one end of the set coil, and the power distribution control off command input circuit is connected to the same-direction end of the reset coil. The relay energizing voltage input circuit is a positive voltage, originating from within the power control system, and this voltage is connected to the other end of the two relay coils.

[0015] The power distribution command receiving circuit consists of a magnetic latching relay, a relay energizing voltage circuit, a power distribution control on command input circuit, and a power distribution control off command input circuit. The power distribution control command is a pulse signal of the same polarity, typically at a low level, originating from the integrated electronics or the lower-level computer.

[0016] The power distribution connection circuit B consists of a power distribution voltage input circuit, two parallel GAN ​​HEMT devices, and a power distribution voltage output circuit. The power distribution voltage input circuit is connected to the source S of the GAN HEMT device and is derived from the DC-DC conversion output of the controller system. One end of the power distribution voltage output circuit is connected to the drain D of the GAN HEMT device, and the other end is connected to the on-board load through an electrical connector to supply power to the on-board load.

[0017] When a command pulse signal is received, the relay energizing voltage circuit connects to the power distribution control command input circuit through the set coil and reset coil, or disconnects the power distribution control command input circuit. That is, the power distribution voltage terminal, the relay coil, and the command input terminal form a circuit. The set coil and reset coil are energized, generating a magnetic force, and the magnetic latching relay contacts actuate, which can complete the state switching between set and reset.

[0018] The relay energizing voltage input is a positive voltage, which originates from inside the power control system and is connected to the other end of the two coils of the relay.

[0019] The gate G of the GAN HEMT device is connected to one end of the magnetic latching relay switch contact, and the other end of the magnetic latching relay switch contact is grounded. When a power distribution command is received, the magnetic latching relay switch contact is activated, and the G pole is connected to ground, the GAN HEMT device is turned on, and the power distribution voltage input circuit is connected to the power distribution voltage output circuit through the GAN HEMT device.

[0020] The input terminals of the GAN HEMT device are each connected in parallel with a series capacitor for filtering.

[0021] A switch status detection circuit is added before the power distribution output terminal of the power distribution voltage output circuit to detect whether the power distribution circuit is connected. The switch status detection circuit is connected between the power distribution voltage output circuit and the output switch status circuit, and outputs a switch status signal. The switch status detection circuit consists of a first resistor connected in parallel to three branches. The first branch has a second resistor connected in series, the second branch has a third resistor connected in series with two capacitors, and the third branch has a fourth resistor connected in series. The fourth resistor is connected in parallel with the third resistor, and the fourth resistor and the third resistor are simultaneously connected in parallel to ground.

[0022] The GAN HEMT device receives a 5V input voltage, which is then divided by two resistors. This ensures that when the gate (G) of the GAN HEMT device is grounded, the gate-source voltage difference is 2.5V, which is greater than or equal to the GAN HEMT device's turn-on threshold voltage, thus turning the GAN HEMT device on. Simultaneously, a Zener diode with a 5V voltage regulation value is connected in parallel between the gate (G) and source (S) of the GAN HEMT device to prevent damage caused by voltage fluctuations exceeding the device's rated gate-source voltage. A series capacitor is connected in parallel at the input terminals of each of the dual GAN ​​HEMT devices for filtering. A switch status detection circuit is added before the power distribution output terminal to detect whether the power distribution circuit is connected. If the power distribution is connected, the output voltage is divided by resistors in the switch status detection circuit, outputting approximately 3V. The resistors and capacitors form an RC circuit for delay and filtering. The 5V positive output line power distribution voltage output circuit is connected to an external load. At the same time, the 5V positive output line power distribution voltage output circuit outputs a 5V switch status signal to the lower-level machine through a switch status detection circuit.

[0023] Compared with the prior art, the beneficial effects of the present invention are:

[0024] Gallium nitride high electron mobility transistors (GAN HEMTs) are used as power devices. Taking advantage of the low gate-source threshold voltage of GAN HEMTs, dual GAN ​​HEMTs are connected in parallel with magnetic latching relays for control. This effectively controls and coordinates the two parts of the power distribution circuit, including the power distribution command receiving circuit and the power distribution connection circuit, to achieve low-voltage, high-current power distribution. At the same time, GAN HEMTs have low conduction losses, and the power distribution efficiency can be greatly improved under high current conditions. High-reliability power distribution is achieved with low size, weight and cost, and it is suitable for centralized and distributed power distribution in the overall circuit subsystem of aerospace power supply. Attached Figure Description

[0025] The features and advantages of the invention will be more clearly understood by referring to the accompanying drawings, which are illustrative and should not be construed as limiting the invention in any way.

[0026] Figure 1 This is a schematic diagram of the connection structure of the circuit for receiving and controlling the power distribution controller in a low-voltage, high-current power distribution system for existing aerospace power supply and distribution systems.

[0027] Figure 2 This is a schematic diagram of the structure of Embodiment 1 of the present invention.

[0028] Figure 3 This is a schematic diagram of the structure of Embodiment 2 of the present invention.

[0029] Figure 4 This is a schematic diagram of the structure of Embodiment 3 of the present invention.

[0030] Figure 5 This is a flowchart of the process in Embodiment 3 of the present invention.

[0031] The reference numerals in the figures include:

[0032] 1-Power distribution voltage input circuit; 2-GAN HEMT device; 3-Power distribution voltage output circuit; 4-Magnetic latching relay; 5-Relay energizing voltage circuit; 6-Grounding (GND) circuit; 7-Power distribution control on command input circuit; 8-Power distribution control off command input circuit; 9-Set coil; 10-Reset coil; 11-Switch status detection circuit; 12-RC circuit. A-Power distribution command receiving circuit; B-Power distribution on circuit. Detailed Implementation

[0033] The main functions of aerospace power supply and distribution systems are as follows:

[0034] 1) Power is transmitted to various electrical devices on the satellite via a cable network.

[0035] 2) Perform power conversion to meet the power supply requirements of electrical equipment.

[0036] 3) Provide line protection in case of equipment failure.

[0037] 4) Provides overload protection and power failure isolation.

[0038] The power supply and distribution subsystem is the subsystem on the spacecraft that generates, stores, transforms, regulates, and distributes electrical energy. Its basic function is to convert light, nuclear, or chemical energy into electrical energy through some physical or chemical change, store, regulate, and transform it as needed, and then supply power to various systems until the end of the spacecraft's lifespan. The power supply and distribution subsystem consists of two subsystems:

[0039] The primary power subsystem includes a power generation unit, an energy storage unit, and a power control unit.

[0040] The overall circuit subsystem includes power converters, power distribution devices, pyrotechnics managers, and cable networks.

[0041] Spacecraft power supply and distribution systems come in three forms:

[0042] Centralized power distribution: Only one overall primary power distributor is set up within the entire satellite. The power distribution control points of all electrical equipment are centralized in one place. Control commands are sent only to this power distributor to control the power consumption of each electrical equipment. Only one primary conversion device is set up to centrally convert the power required by each electrical equipment, so that parameters such as power supply voltage, output power, voltage stability, and primary ripple can meet the requirements of each electrical equipment.

[0043] Distributed power distribution: The power distribution control points of various electrical devices in the aircraft are set up in a decentralized manner. Control commands need to be sent to each electrical device or its subsystem for power distribution control. The device itself or its subsystem performs power conversion to meet the power requirements of the device for various parameters.

[0044] Centralized and distributed power distribution: This is a combination of the two power distribution systems mentioned above. It can be centralized power distribution with distributed conversion, or centralized conversion with distributed power distribution. Each of the three methods has its advantages and disadvantages, and the choice is made based on factors such as the size of the spacecraft and its power requirements. Centralized power distribution is generally used for small and microsatellites, while a combination of centralized and distributed power distribution is more common for large spacecraft. However, with the development of modularization, standardization, and modularization of products, distributed power distribution has become the main development direction. The power distribution voltage of aerospace power supply and distribution systems is complex and variable, depending on various factors and design requirements. It is evident that the continuous development of aviation, aerospace, and UAV technologies has placed more stringent demands on power supply systems, requiring power sources to possess characteristics of high power, small size, and light weight.

[0045] Traditional silicon transistors can no longer meet these requirements, necessitating the use of gallium nitride (GaN) power transistors (HEMTs). The basic structure of a GaN HEMT primarily consists of a heterojunction of AlGaN and GaN, and a two-dimensional electron gas (2DEG) layer. GaN HEMTs are based on an AlGaN / GaN heterojunction, where AlGaN acts as a barrier layer and GaN as a channel layer. This structure utilizes the polarization effect to generate a high-density 2DEG at the heterojunction interface. These electrons form conductive channels under the influence of an electric field, thereby enabling current conduction. The AlGaN barrier layer, as part of the heterojunction, generates a 2DEG at the interface through the polarization effect. This polarization effect produces a very high charge density, thus improving the device's conductivity. The GaN channel layer serves as the main current transport channel; the 2DEG in the GaN layer forms conductive channels under the influence of an electric field, enabling current conduction. The gate voltage can be controlled to adjust the amount of 2DEG, thereby controlling the device's on / off state. The gate switches the device by depleting or injecting a two-dimensional electron gas. The operating principle of GaN HEMTs is based on the fundamental principle of field-effect transistors. When a positive voltage is applied to the gate, it attracts electrons from the two-dimensional electron gas, forming a conductive channel and turning the device on. When the gate voltage is zero or negative, the two-dimensional electron gas is depleted, the conductive channel disappears, and the device turns off. This structure gives GaN HEMTs high electron mobility, low on-resistance, and fast switching characteristics, making them particularly suitable for high-frequency and high-power applications. Due to their high-frequency, high-power, and high-temperature characteristics, GaN HEMTs are widely used in the following fields: in power adapters, on-board charging, and data centers, GaN power devices can improve the efficiency and power density of converters; due to their high-frequency characteristics, GaN HEMTs have important applications in 5G base station power supplies and satellite communications; and they are also widely used in the manufacture of laser diodes (LDs) for communications, laser printing, and optical storage.

[0046] In semiconductor devices, the drain-source voltage (Vds) refers to the voltage difference between the drain and source terminals. This voltage directly affects the device's conductivity and current flow. The gate-source voltage (Vgs), on the other hand, refers to the voltage between the gate and source terminals, and it is a key factor determining the gate's control over the channel.

[0047] In a transistor structure, the gate (G) is a conductive layer located on top of an insulating layer, and its function is to control the current by changing the electric field. The source (S) is connected to one end of the N-type semiconductor, and the drain (D) is the other end. The gate is formed by the connection between the P-region and the N-type semiconductor. On an N-type silicon wafer, the source and drain are led out at both ends, and the very thin N-region is called the conductive channel.

[0048] A common-drain amplifier, also known as a source follower, is a common transistor configuration. In this circuit, the source is used as the output, and the drain is used as the input. The gate is abbreviated as G, the source as S, and the drain as D. This configuration allows the circuit to have a high output impedance, making it very useful in amplifier circuits.

[0049] The gate-source voltage (Vgs) regulates the gate's control over the conductive channel, thus affecting the drain-source current (Ids). When Vgs increases, the gate electric field strengthens, making the channel more conductive and consequently increasing Ids. Conversely, when Vgs decreases, the gate electric field weakens, the channel conductivity deteriorates, and Ids decreases.

[0050] Gate-source voltage and drain-source voltage play crucial roles in the operation of transistors. By properly setting these two voltages, device performance can be optimized to achieve the desired circuit function. For example, in digital circuits, an appropriate gate-source voltage ensures that the transistor switches between on and off states, while in analog circuits, a suitable drain-source voltage can adjust the amplifier gain.

[0051] The advantage of HEMT lies in its high carrier concentration and higher electron mobility due to reduced scattering of ionized impurities. The combination of high carrier concentration and high electron mobility results in high current density and low channel resistance, leading to excellent high-frequency performance and high efficiency, which is particularly important in high-frequency operation and switching power supply applications.

[0052] The principle of this invention lies in employing a current balancing control method. A GaN HEMT power transistor is used as the main switch. Two GaN HEMTs are connected in parallel and bridging the magnetic latching relay and the positive output line of the low-voltage power supply. The drain (D) of the GaN HEMT is connected to the positive output line of the low-voltage power supply, and the source (S) is connected to the input terminal of the low-voltage power supply. The gate (G) of the GaN HEMT is connected to the contact terminal of the magnetic latching relay 4 through a voltage divider resistor. The switching terminal of the magnetic latching relay 4 is grounded through a low-voltage power supply protection circuit. The set coil 9 of the magnetic latching relay 4 is connected in parallel with a set of diodes between the relay energizing voltage circuit 5 and the power distribution control on command input circuit 7. The reset coil 10 of the magnetic latching relay 4 is connected in parallel with another set of diodes between the relay energizing voltage circuit 5 and the power distribution control off command input circuit 8.

[0053] The power distribution method of this invention uses gallium nitride high electron mobility transistors (GAN HEMTs) as power devices, which ensures and improves performance while reducing product size, weight and cost.

[0054] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0055] Although embodiments of the invention have been described in conjunction with the accompanying drawings, those skilled in the art can make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations all fall within the scope defined by the appended claims.

[0056] Example 1: As shown in the attached document Figure 2 As shown, the power distribution circuit includes two parts: a power distribution command receiving circuit A and a power distribution connection circuit B. These two parts are connected to one end of the switch contact of the magnetic latching relay 4 on the power distribution command receiving circuit A through the gate G of the GAN HEMT device 2 on the power distribution connection circuit B.

[0057] In this embodiment of the invention, the power distribution command receiving circuit A consists of a magnetic latching relay 4, a relay energizing voltage circuit 5, a power distribution control on command input circuit 7, and a power distribution control off command input circuit 8. The power distribution control command is a pulse signal of the same polarity, typically low-level, originating from the integrated electronics or lower-level computer. The magnetic latching relay 4 contains two coils wound in opposite directions: a set coil 9 and a reset coil 10. The power distribution control on command input circuit 7 is connected to one end of the set coil 9, and the power distribution control off command input circuit 8 is connected to the same-direction end of the reset coil 10. The energizing voltage input to the relay energizing voltage circuit 5 is a positive voltage originating from within the power control system; this voltage is connected to the other end of the two relay coils. When a command pulse signal is received, the relay energizing voltage circuit 5 is connected to the power distribution control connection command input circuit 7 or the power distribution control disconnect command input circuit 8 through the set coil 9 and the reset coil 10. That is, the power distribution voltage terminal, the relay coil, and the command input terminal form a circuit. The set coil 9 and the reset coil 10 are energized, generating a magnetic force. The contacts of the magnetic latching relay 4 are activated, which can complete the state switching between set and reset.

[0058] In this embodiment, the power distribution connection circuit B consists of a power distribution voltage input circuit 1, two parallel GAN ​​HEMT devices 2, and a power distribution voltage output circuit 3. The power distribution voltage input circuit 1 is connected to the source (S) of the GAN HEMT device 2, and its power supply originates from the DC-DC converter output of the controller system. One end of the power distribution voltage output circuit 3 is connected to the drain (D) of the GAN HEMT device 2, and the other end is connected to the on-board load via an electrical connector to supply power to the on-board load. The gate (G) of the GAN HEMT device 2 is connected to one end of the switch contact of the magnetic latching relay 4, and the other end of the switch contact of the magnetic latching relay 4 is grounded. When a power distribution command is received, the switch contact of the magnetic latching relay 4 actuates, and the G terminal is connected to ground, turning on the GAN HEMT device 2. The power distribution voltage input circuit 1 is then connected to the power distribution voltage output circuit 3 through the GAN HEMT device 2.

[0059] In this embodiment, the magnetic latching relay 4 contacts return to their original position and the gate (G) of the GAN HEMT device 2 is separated from ground until the power distribution control disconnection command input circuit 8 receives the corresponding power distribution "disconnection" command. After the gate (G) of the GAN HEMT device 2, which acts as a power distribution switch, is grounded, a voltage difference is formed between the source (S) and gate (G) of the GAN HEMT device 2. Since the GAN HEMT device 2 has a low turn-on threshold voltage, the low voltage difference drives the GAN HEMT device 2 to conduct and complete the power distribution operation. The parallel connection of the two GAN HEMTs ensures high circuit reliability.

[0060] In this embodiment, a set of series capacitors are connected in parallel at the input terminals of the GAN HEMT device 2 for filtering.

[0061] Preferably, a magnetic latching relay is also an automatic switch, automatically connecting and disconnecting circuits. The normally closed or normally open state of a magnetic latching relay depends entirely on the action of a permanent magnet, and its switching state is triggered by a pulse electrical signal of a certain width. A magnetic latching relay contains two coils: a control coil and a holding coil. The control coil is used to activate the relay, generating a magnetic field that attracts the moving iron core, causing the contacts to close. The holding coil is used to maintain the relay's state, generating a magnetic field through a continuous current to keep the contacts closed.

[0062] Preferably, the GAN HEMT module is a gallium nitride power transistor, i.e., a novel switching power supply control chip, comprising a base silicon substrate. A GaN·HEMT device is epitaxially grown on the top of the base silicon substrate. An LV·MOS device and a PWM+ drive circuit are also grown on the top of the base silicon substrate. The LV·MOS device is located to the left of the PWM+ drive circuit. A second metal interconnect and two first metal interconnects are fixedly mounted on the top of the LV·MOS device on the base silicon substrate. The GaN·HEMT device is epitaxially grown on a selected area of ​​the base silicon substrate as the epitaxial material and fabricated into a depletion-mode device using standard CMOS technology. During the fabrication of the depletion-mode device, a lateral low-voltage GaN·HEMT device is simultaneously fabricated on the base silicon substrate, and the two are cascode-connected monolithically. On the other hand, the PWM+ drive circuit is fabricated on the base silicon substrate using CMOS technology, achieving monolithic integration and a small overall size. The technical solution of this product is disclosed in patent application 202121365549.2.

[0063] Example 2: As shown in the attached document Figure 3As shown, a switch status detection circuit 11 is added before the power distribution output terminal of the power distribution voltage output circuit 3 to detect whether the power distribution circuit is connected. The switch status detection circuit 11 is connected between the power distribution voltage output circuit 3 and the output switch status circuit, and outputs a switch status signal. The switch status detection circuit 11 consists of a first resistor connected in parallel to three branches. The first branch has a second resistor connected in series, the second branch has a third resistor connected in series with two capacitors, and the third branch has a fourth resistor connected in series. The fourth resistor is connected in parallel with the third resistor, and the fourth resistor and the third resistor are connected in parallel to ground.

[0064] In this embodiment of the invention, if the power distribution voltage input circuit 1 is connected to the power distribution voltage output circuit 3 via the GAN HEMT device 2, the power distribution is turned on. The output voltage is divided by resistors RB5, RB4, and RB7 in the switch state detection circuit 11, outputting a voltage of approximately 3V. Resistor RB1 and capacitors CB1 and CB2 form an RC circuit for delay and filtering. The power distribution voltage output circuit 3 with a 5V positive output line is connected to an external load. Simultaneously, the power distribution voltage output circuit 3 with a 5V positive output line outputs a 5V switch state signal through the switch state detection circuit 11 and connects it to the lower-level machine.

[0065] Example 3: The power distribution method of this invention is applied in the 5V power distribution circuit design of aerospace power controller products. (See attached diagram.) Figure 4 As shown, the controller bus voltage circuit inputs the +5V distribution voltage to the two parallel GAN ​​HEMT devices 2 via the DC-DC converter and the distribution voltage input circuit 1.

[0066] In this embodiment of the invention, after the input distribution voltage of 5V is applied to the GAN HEMT device 2, a voltage divider is applied through resistors RB2 and RB6. This ensures that when the gate (G) of the GAN HEMT device 2 is grounded, the gate-source voltage difference is 2.5V, which is greater than or equal to the turn-on threshold voltage of the GAN HEMT device 2, thus turning on the GAN HEMT device 2. Simultaneously, a Zener diode DB5 is connected in parallel between the gate (G) and source (S) of the GAN HEMT device 2. The Zener diode DB5 has a Zener voltage of 5V to prevent damage to the GAN HEMT device 2 due to voltage fluctuations exceeding its rated gate-source voltage. A set of series capacitors is connected in parallel at the input terminals of each of the two GAN HEMT devices 2 for filtering. A switch status detection circuit 11 is added before the power distribution output terminal of the power distribution voltage output circuit 3 to detect whether the power distribution circuit is connected. If the power distribution is connected, the output voltage is divided by resistors RB5, RB4, and RB7 in the switch status detection circuit 11 to output a voltage of about 3V. Resistor RB1 and capacitors CB1 and CB2 form an RC circuit for delay and filtering. The power distribution voltage output circuit 3 with the 5V output positive line is connected to an external load. At the same time, the power distribution voltage output circuit 3 with the 5V output positive line is connected to the lower-level machine through the switch status detection circuit 11 to output a 5V switch status signal.

[0067] The aforementioned magnetic latching relay is model 2JB1-910 / V 12 / 1 / J. Its parameters are: rated current of the power contacts is 1A, rated coil voltage is 12V with a maximum value of 16V, operating voltage does not exceed 10V across the entire temperature range, and coil impedance is 500Ω. Two Zener diodes are connected in series in parallel across the relay coil, each with a Zener voltage of 6.5V, ensuring that the input voltage does not exceed the coil's maximum withstand voltage and thus prevent relay damage.

[0068] In the aforementioned example, the GAN HEMT uses gallium nitride devices from Innoscience, specifically the INN100EQ016A model. This model of GAN HEMT has a turn-on threshold voltage of 0.8–2.5V and a maximum rated gate-source voltage of -4V and 6V.

[0069] The flowchart in this embodiment of the invention is attached. Figure 5As shown, the workflow includes: Simultaneously with the power distribution command input to the magnetic latching relay 4, the power distribution voltage input arrives at the GAN HEMT device 2, the GAN HEMT device 2 switches on, and then, while the power distribution voltage is output, the power distribution output voltage is detected. After receiving the corresponding power distribution control command, the magnetic latching relay 4 energizes the set coil 9 and reset coil 10 to close its contact switch. One end of the magnetic latching relay 4's contact is connected to the G pole of the GAN HEMT device 2, and the other end of the magnetic latching relay 4 is grounded. The magnetic latching relay 4's contact switch closes, grounding the connected G pole of the GAN HEMT device 2, until the corresponding power distribution "disconnect" command is received. At this point, the magnetic latching relay 4's contact position returns to normal, and the G pole of the GAN HEMT device 2 is separated from the grounding circuit. After the G-terminal of the GAN HEMT device 2, which acts as a power distribution switch, is grounded, a gate-source voltage difference is formed between the source S and the gate G of the GAN HEMT device 2. Since the GAN HEMT device 2 has a low turn-on threshold voltage, the low voltage difference drives the GAN HEMT device 2 to turn on and complete the power distribution work. The parallel connection of the two GAN HEMT devices 2 ensures the high reliability of the circuit.

[0070] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0071] In this application, unless otherwise expressly specified and limited, the terms “installation,” “connection,” “fixation,” etc., shall be interpreted broadly, for example, as a fixed connection, a detachable connection, or an integral connection.

Claims

1. A low-voltage, high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control, characterized in that... Using GaN HEMT power transistors as the main switching transistors, two GaN HEMTs are connected in parallel and bridged between the magnetic latching relay and the positive output line of the low-voltage power supply. The drain (D) of the GaN HEMT is connected to the positive output line of the low-voltage power supply, and the source (S) of the GaN HEMT is connected to the input terminal of the low-voltage power supply. The gate (G) of the GaN HEMT is connected to the contact terminal of the magnetic latching relay (4) through a voltage divider resistor. The magnetic latching relay (4) has a built-in bit coil (9) and a reset coil (10). The switching terminal of the magnetic latching relay (4) is grounded through the low-voltage power supply protection circuit. The power distribution circuit includes two parts: a power distribution command receiving circuit and a power distribution connection circuit. These two parts are connected through the GaN HEMT on the power distribution connection circuit (B). The gate G of the HEMT device (2) is connected to one end of the switch contact of the magnetic latching relay (4) on the power distribution command receiving circuit (A); the set coil (9) of the magnetic latching relay (4) is connected in parallel with a set of diodes between the relay energizing voltage circuit (5) and the power distribution control turn-on command input circuit (7); the reset coil (10) of the magnetic latching relay (4) is connected in parallel with another set of diodes between the relay energizing voltage circuit (5) and the power distribution control turn-off command input circuit (8); at the same time as the power distribution command is input to the magnetic latching relay (4) command receiving circuit, it arrives at the GAN HEMT device (2) at the same time as the power distribution voltage input, the switch of the GAN HEMT device (2) is turned on, and then the power distribution voltage is output. The set coil (9) and reset coil (10) inside the magnetic latching relay (4) are coils wound in opposite directions; the power distribution control turn-on command input circuit (7) is connected to one end of the set coil (9), and the power distribution control turn-off command input circuit (8) is connected to one end of the reset coil (10) in the same direction; the power supply voltage input circuit (5) of the relay is a positive voltage, which comes from inside the power control system, and this voltage is connected to the other end of the two coils of the relay; The power distribution connection circuit consists of a power distribution voltage input circuit (1), two parallel GAN ​​HEMT devices (2), and a power distribution voltage output circuit (3). The power distribution voltage input circuit (1) is connected to the source S of the GAN HEMT device (2). The power distribution voltage input circuit (1) is derived from the DC-DC conversion output of the controller system. One end of the power distribution voltage output circuit (3) is connected to the drain D of the GAN HEMT device (2), and the other end is connected to the on-board load through an electrical connector to supply power to the on-board load.

2. The low-voltage, high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that, The power distribution command receiving circuit consists of a magnetic latching relay (4), a relay energizing voltage circuit (5), a power distribution control on command input circuit (7), and a power distribution control off command input circuit (8); among which the power distribution control command is a pulse signal of the same polarity, usually at a low level, and originates from the integrated electronics or the lower-level machine.

3. The low-voltage, high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that, When a command pulse signal is received, the relay energizing voltage circuit (5) is connected to the power distribution control connection command input circuit (7) or the power distribution control disconnect command input circuit (8) through the set coil (9) and the reset coil (10). That is, the power distribution voltage terminal, the relay coil, and the command input terminal form a circuit. The set coil (9) and the reset coil (10) are energized, generating a magnetic force. The contacts of the magnetic latching relay (4) are activated, which can complete the state switching of set or reset.

4. The low-voltage, high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that, The input voltage of the relay energizing voltage circuit (5) is a positive voltage, which comes from the inside of the power control system. This voltage is connected to the other end of the two coils of the relay.

5. The low-voltage, high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that, The gate G of the GAN HEMT device (2) is connected to one end of the switch contact of the magnetic latching relay (4), and the other end of the switch contact of the magnetic latching relay (4) is grounded. When a power distribution command is received, the switch contact of the magnetic latching relay (4) is activated, the G pole is connected to the ground, the GAN HEMT device (2) is turned on, and the power distribution voltage input circuit (1) is connected to the power distribution voltage output circuit (3) through the GAN HEMT device (2).

6. The low-voltage, high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that, The input terminals of the GAN HEMT device (2) are connected in parallel with a series capacitor for filtering.

7. The low-voltage, high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that, A switch status detection circuit (11) is added before the power distribution output terminal of the power distribution voltage output circuit (3) to detect whether the power distribution circuit is connected; the switch status detection circuit (11) is connected between the power distribution voltage output circuit (3) and the output switch status circuit, and outputs a switch status signal; the switch status detection circuit (11) is composed of a first resistor connected in parallel to three branches, wherein a second resistor is connected in the first branch, a third resistor is connected in series with two capacitors in the second branch, a fourth resistor is connected in series in the third branch, and the fourth resistor is connected in parallel with the third resistor, wherein the fourth resistor and the third resistor are simultaneously connected in parallel to ground.

8. The low-voltage, high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that, After the input power supply voltage of 5V is applied to the GAN HEMT device (2), it is divided by two resistors so that when the gate (G) of the GAN HEMT device (2) is grounded, the gate-source voltage difference of the GAN HEMT is 2.5V, which is greater than or equal to the turn-on threshold voltage of the GAN HEMT device (2), and the GAN HEMT device (2) is turned on. At the same time, a Zener diode is connected in parallel between the gate (G) and the source (S) of the GAN HEMT device (2). The Zener diode has a Zener voltage of 5V to prevent damage to the GAN HEMT device (2) due to voltage fluctuations or other factors exceeding the rated gate-source voltage of the GAN HEMT device (2). The input terminals of the device (2) are connected in parallel with a series capacitor for filtering; the power distribution voltage output circuit (3) adds a switch status detection circuit (11) before the power distribution output terminal to detect whether the power distribution circuit is connected. If the power distribution is connected, the output voltage is divided by the resistor in the switch status detection circuit (11) and outputs a voltage of about 3V. The resistor and capacitor form an RC circuit for delay and filtering; the power distribution voltage output circuit (3) with 5V output positive line is connected to an external load. At the same time, the power distribution voltage output circuit (3) with 5V output positive line is connected to the lower computer through the switch status detection circuit (11) to output a 5V switch status signal.

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