Light-emitting diode chip and preparation method thereof, light-emitting device and display device

Abstract

The embodiment of the invention provides a light-emitting diode chip and a preparation method thereof, a light-emitting device and a display device, and belongs to the technical field of display. The light-emitting diode chip comprises a transparent bearing layer, a reflecting layer, a light absorbing layer and light-emitting units with various colors, wherein the light-emitting units with the various colors are arranged on the first surface of the transparent bearing layer at intervals; at least part of the reflecting layer is located on the first surface and located between the light-emitting units of the multiple colors. The light absorbing layer is located on the surface, away from the first surface, of the reflecting layer, and at least part of orthographic projection of the light absorbing layer on the first surface is located among the light emitting units of the multiple colors. According to the embodiment of the invention, the display effect and the light emitting efficiency of the LED chip can be effectively improved.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light emitting diode chip and a preparation method thereof, a light emitting device and a display apparatus. Background Art

[0002] Light Emitting Diode (LED) has been widely used in various light source fields such as backlight, lighting, and landscaping due to its small size, long service life, rich colors, and low energy consumption.

[0003] In the related art, the LED chip includes a transparent carrier layer and light-emitting units of various colors, and the light-emitting units of various colors are arranged at intervals on the surface of the transparent carrier layer. The light-emitting surface of the LED chip is the side where the transparent carrier layer is located.

[0004] However, since the spacing between the light-emitting units of various colors is usually small, the color contrast of the LED chip is poor. In addition, the light emitted by the light-emitting unit may be emitted from different directions other than the light-emitting surface, thereby affecting the light-emitting efficiency of the LED chip. In addition, the light-emitting units of various colors emit light of different colors, which is prone to light crosstalk, affecting the display effect of the LED chip. Summary of the invention

[0005] The embodiments of the present disclosure provide a light-emitting diode chip and a method for manufacturing the same, a light-emitting device and a display device, which can effectively improve the display effect and light extraction efficiency of the LED chip. The technical solution is as follows:

[0006] On the one hand, a light-emitting diode chip is provided, comprising a transparent supporting layer, a reflective layer, a light-absorbing layer and light-emitting units of multiple colors, wherein the light-emitting units of multiple colors are arranged at intervals on the first surface of the transparent supporting layer; at least a portion of the reflective layer is located on the first surface and between the light-emitting units of the multiple colors; the light-absorbing layer is located on a surface of the reflective layer away from the first surface, and at least a portion of the orthographic projection of the light-absorbing layer on the first surface is located between the light-emitting units of the multiple colors.

[0007] Optionally, the reflective layer is also located on a surface of the light-emitting unit away from the first surface.

[0008] Optionally, a surface of the reflective layer away from the first surface is parallel to the first surface.

[0009] Optionally, an orthographic projection of the light absorbing layer on the first surface and an orthographic projection of the light emitting units of multiple colors on the first surface have overlapping parts.

[0010] Optionally, the light-emitting diode chip further includes a wire layer, which is located on a surface of the light-absorbing layer away from the first surface, and includes a plurality of conductive lines, which penetrate the light-absorbing layer and the reflective layer and are connected to the light-emitting unit.

[0011] Optionally, the light-emitting diode chip further includes a passivation layer and a pad electrode layer, the passivation layer being located on a surface of the wire layer away from the first surface, the passivation layer having a plurality of through holes exposing the wire layer; the pad electrode layer including a plurality of pad electrodes, at least portions of the pad electrodes being located in the through holes and connected to the conductive circuit.

[0012] Optionally, the orthographic projection of the pad electrode layer on the first surface has no overlapping portion with the orthographic projection of the light-emitting units of multiple colors on the first surface.

[0013] On the other hand, a method for preparing a light-emitting diode chip is provided, comprising: forming light-emitting units of multiple colors on a first surface of a transparent carrier layer, the light-emitting units of the multiple colors being arranged at intervals; forming a reflective layer, at least a portion of the reflective layer being located on the first surface and between the light-emitting units of the multiple colors; and forming a light-absorbing layer on the reflective layer, at least a portion of an orthographic projection of the light-absorbing layer on the first surface being located between the light-emitting units of the multiple colors.

[0014] On the other hand, a light emitting device is provided, comprising a circuit board and a plurality of any one of the aforementioned light emitting diode chips, wherein the plurality of light emitting diode chips are arranged in an array on the circuit board.

[0015] On the other hand, a display device is provided, comprising a substrate and a plurality of any one of the aforementioned light-emitting devices, wherein the plurality of light-emitting devices are arrayed on the substrate.

[0016] The technical solution provided by the embodiments of the present disclosure has the following beneficial effects:

[0017] In the disclosed embodiment, at least part of the reflective layer is located on the first surface of the transparent carrier layer and between the light-emitting units of multiple colors. The reflective layer can improve the reflectivity of light between the light-emitting units of multiple colors, reduce the probability of light crosstalk caused by light from the side wall of the light-emitting unit to the light-emitting area of ​​the adjacent light-emitting unit of different colors, and at the same time make more light be reflected and emitted from the side where the transparent carrier layer is located, thereby improving the display effect and light-emitting efficiency of the LED chip. In addition, a light-absorbing layer is arranged on the surface of the reflective layer away from the first surface, and at least part of the positive projection of the light-absorbing layer on the first surface is located between the light-emitting units of multiple colors. The light-absorbing layer can effectively absorb most of the light between the light-emitting units of multiple colors and present a darker color, which can visually form a larger light-dark difference with the light emitted by the light-emitting units of multiple colors, improve the color contrast of the LED chip, and further improve the display effect of the LED chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 is a top view of an LED chip provided by an embodiment of the present disclosure;

[0020] Figure 2 yes Figure 1 Schematic diagram of the cross-section structure at the AA line;

[0021] Figure 3 is a structural schematic diagram of a light-emitting unit provided in an embodiment of the present disclosure;

[0022] Figure 4 yes Figure 1 Schematic diagram of the cross-section structure at the BB line;

[0023] Figure 5 is a flow chart of a method for preparing an LED chip provided by an embodiment of the present disclosure;

[0024] Figure 6 This is a flow chart of another method for preparing an LED chip provided in an embodiment of the present disclosure.

[0025] Reference numerals:

[0026] 10: transparent carrier layer; 10a: transparent substrate; 10b: transparent adhesive layer; 11: first surface; 20: light-emitting unit; 21: light-emitting structure; 211: first semiconductor layer; 212: light-emitting layer; 213: second semiconductor layer; 214: table; 22: first connecting electrode; 23: second connecting electrode; 24; insulating layer; 30: reflective layer; 40: light-absorbing layer; 50: conductive circuit; 60: passivation layer; 61: through hole; 70: pad electrode. DETAILED DESCRIPTION

[0027] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0028] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons with ordinary skills in the field to which the present disclosure belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity restriction, but indicate that there is at least one. Words such as "include" and similar words mean that the elements or objects appearing before "include" include the elements or objects listed after "include" and their equivalents, and do not exclude other elements or objects. Words such as "connect" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right", "top", "bottom" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly. In addition, "A and / or B" means that there are three situations: A, B and A and B.

[0029] Figure 1 4 is a top view of an LED chip provided in an embodiment of the present disclosure. Figure 2 yes Figure 1 Schematic diagram of the cross-section structure at the AA line. Figure 1 and Figure 2 The LED chip includes a transparent supporting layer 10, a reflecting layer 30, a light absorbing layer 40 and light emitting units 20 of various colors.

[0030] The light-emitting units 20 of various colors are arranged at intervals on the first surface 11 of the transparent carrier layer 10. At least a portion of the reflective layer 30 is located on the first surface 11 and between the light-emitting units 20 of various colors. The light-absorbing layer 40 is located on a surface of the reflective layer 30 away from the first surface 11, and at least a portion of the orthographic projection of the light-absorbing layer 40 on the first surface 11 is located between the light-emitting units 20 of various colors.

[0031] In the disclosed embodiment, at least a portion of the reflective layer 30 is located on the first surface 11 of the transparent carrier layer 10 and between the light-emitting units 20 of various colors. The reflective layer 30 can improve the reflectivity of light between the light-emitting units 20 of various colors. Figure 2 The arrows in the figure indicate the propagation path of the light near the side wall of the light emitting unit 20, the solid arrows indicate the propagation path of the light, and the dotted arrows indicate the possible propagation path of the light when the reflective layer 30 is not provided. Figure 2 As shown, due to the provision of the reflective layer 30, the light that may originally be directly emitted from the side wall of the light-emitting unit 20 will be reflected by the reflective layer 30, so that the reflected light still emits from the light-emitting area corresponding to the light-emitting unit 20, reducing the probability of light crosstalk caused by the light emitting from the side wall of the light-emitting unit 20 to the light-emitting area of ​​the adjacent light-emitting unit 20 of different colors, and at the same time making more light reflected and emitted from the side where the transparent carrier layer 10 is located, thereby improving the display effect and light-emitting efficiency of the LED chip. In addition, a light-absorbing layer 40 is provided on the surface of the reflective layer 30 away from the first surface 11, and at least part of the positive projection of the light-absorbing layer 40 on the first surface 11 is located between the light-emitting units 20 of multiple colors. The light-absorbing layer 40 can effectively absorb most of the light between the light-emitting units 20 of multiple colors and present a darker color, which can visually form a larger light-dark difference with the light emitted by the light-emitting units 20 of multiple colors, improve the color contrast of the LED chip, and thus further improve the display effect of the LED chip.

[0032] Exemplarily, the light emitting units 20 of multiple colors include a red light emitting unit, a green light emitting unit and a blue light emitting unit. Such an LED chip may be referred to as a three-color LED chip.

[0033] In other embodiments, the light emitting units 20 of multiple colors may include a white light emitting unit, a red light emitting unit, a green light emitting unit, and a blue light emitting unit.

[0034] Optionally, the reflective layer 30 is also located on the surface of the light emitting unit 20 away from the first surface 11. Most of the surface and sidewall of the light emitting unit 20 are covered by the reflective layer 30, so that most of the light emitted by the light emitting unit 20 is reflected and emitted from the side where the transparent supporting layer 10 is located, thereby improving the light extraction efficiency of the LED chip.

[0035] In other embodiments, the reflective layer 30 may also be located only on the first surface 11 between the light-emitting units 20 of multiple colors, without covering the surface of the light-emitting unit 20 away from the first surface 11 , and the present disclosure is not limited to this.

[0036] Optionally, the surface of the reflective layer 30 away from the first surface 11 is parallel to the first surface 11. That is, the maximum thickness of the reflective layer 30 is relatively large, and the first surface 11 between the light-emitting units 20 of various colors and the surface of the reflective layer 30 away from the first surface 11 located on the surface of the light-emitting unit 20 away from the first surface 11 are flush. In this way, not only can the reflective effect of the reflective layer 30 be ensured to be good, but the reflective layer 30 can also play a flattening role, which is conducive to improving the quality of each film layer located on the reflective layer 30.

[0037] Exemplarily, the maximum thickness of the reflective layer 30 is greater than 20 μm.

[0038] In other embodiments, each portion of the reflective layer 30 has a uniform thickness. The height of the surface of the reflective layer 30 away from the first surface 11 is not even, for example, the surface height of the reflective layer 30 on the first surface 11 between the light-emitting units 20 of multiple colors is lower than the surface height of the reflective layer 30 on the surface of the light-emitting unit 20 away from the first surface 11, which facilitates simplifying the manufacturing process of the reflective layer 30.

[0039] Optionally, the reflective layer 30 is made of an insulating material. The insulating reflective layer 30 can reduce the probability of short circuits between different light-emitting units 20 and ensure better reliability of the LED chip.

[0040] Exemplarily, the reflective layer 30 may be a distributed Bragg reflection (DBR) layer or a reflective white glue layer.

[0041] Exemplarily, the DBR layer includes a plurality of SiO 2 Layers and multiple TiO 2 The number of periods of the DBR layer may be 20 to 50. For example, the DBR layer may include 30 SiO layers that are periodically and alternately stacked. 2 layer and 30 TiO 2 layer.

[0042] Optionally, the orthographic projection of the light absorbing layer 40 on the first surface 11 overlaps with the orthographic projection of the light emitting units 20 of various colors on the first surface 11. In this way, the light absorbing layer 40 can effectively absorb the light between the light emitting units 20 of various colors and part of the light not reflected by the reflective layer 30, thereby effectively reducing light leakage, improving the color contrast of the LED chip, and improving the display effect of the LED chip.

[0043] Exemplarily, the orthographic projection of the light absorbing layer 40 on the first surface 11 completely overlaps with the orthographic projection of the reflective layer 30 on the first surface 11 .

[0044] In a possible embodiment, the orthographic projection of the light absorbing layer 40 on the first surface 11 is located inside the orthographic projection of the reflective layer 30 on the first surface 11. The overlapping portion of the orthographic projection of the light absorbing layer 40 on the first surface 11 and the orthographic projection of the light emitting unit 20 on the first surface 11 is located at the edge of the light emitting unit 20 and overlaps with the outer contour of the orthographic projection of the light emitting unit 20 on the first surface 11. Exemplarily, the shape of the overlapping portion can be a ring with a rectangular outer contour. For example, the ratio of the width of the rectangular ring to the minimum distance from the center point of the orthographic projection of the light emitting unit 20 on the first surface 11 to its outer contour is 0.1 to 0.2. This is not only conducive to reducing light leakage and improving the color contrast of the LED chip, but also facilitates the reliable connection of the subsequent wire layer and the light emitting unit 20.

[0045] In another possible implementation, the orthographic projection of the reflective layer 30 on the first surface 11 may be located inside the orthographic projection of the light absorbing layer 40 on the first surface 11. For example, the light absorbing layer 40 may also be located on the side wall of the reflective layer 30, contacting the first surface 11 and / or the surface of the light emitting unit 20 away from the first surface 11.

[0046] In other embodiments, the orthographic projection of the light absorbing layer 40 on the first surface 11 is located around the orthographic projection of each light emitting unit 20 on the first surface 11, and has no overlapping portion with the orthographic projection of the light emitting units 20 of multiple colors on the first surface 11, and the present disclosure does not limit this. For example, the reflective layer 30 is located on the first surface 11 and the surface of the light emitting unit 20 away from the first surface 11, and the light absorbing layer 40 is only located on the reflective layer 30 between the light emitting units 20 of multiple colors.

[0047] Optionally, the thickness of the light absorbing layer 40 is less than the maximum thickness of the reflective layer 30. In this way, the color contrast of the LED chip can be improved while ensuring that the thickness of the LED chip is small.

[0048] Optionally, the material of the light absorbing layer 40 includes at least one of an organic material and an inorganic material.

[0049] Exemplarily, the light absorbing layer 40 may be made of an organic material, for example, the organic material may be black photoresist, benzocyclobutene, polyimide or silicone.

[0050] In other embodiments, the light absorbing layer 40 may be made of an inorganic material, for example, SiN or the like.

[0051] In the disclosed embodiment, transparency means that the film layer has a large transmittance to light, for example, the transmittance to light of the transparent carrier layer 10 can be greater than 80%, which can reduce the absorption of light by the transparent carrier layer 10 and help improve the luminous efficiency of the LED chip.

[0052] Exemplarily, the light transmittance of the transparent supporting layer 10 may be greater than 95%. For example, the light transmittance of the transparent supporting layer 10 may be 96%, 98% or 99%.

[0053] Optionally, the transparent carrier layer 10 includes a transparent substrate 10a and a transparent adhesive layer 10b stacked in sequence, and the first surface 11 is the surface of the transparent adhesive layer 10b away from the transparent substrate 10a. In this way, the transparent substrate 10a can be reliably bonded to the light-emitting unit 20 and the reflective layer 30 through the transparent adhesive layer 10b, reducing the probability of falling off, thereby improving the reliability of the LED chip. In addition, the transparent substrate 10a and the transparent adhesive layer 10b have a weaker absorption effect on light, which can ensure a high light transmittance, thereby ensuring a high light extraction efficiency of the LED chip.

[0054] Optionally, the transparent substrate 10a may be a sapphire substrate, a glass substrate, a silicon substrate, a silicon carbide substrate or the like.

[0055] Optionally, the thickness of the transparent substrate 10a is greater than 10 μm.

[0056] Exemplarily, the shape of the outer contour of the transparent substrate 10a may be a rectangle.

[0057] Optionally, the transparent adhesive layer 10b is made of at least one of an organic material and an inorganic material.

[0058] Exemplarily, the transparent adhesive layer 10 b may be made of an organic material, such as organic silica gel, epoxy resin, benzocyclobutene resin or polyimide resin.

[0059] In other embodiments, the transparent adhesive layer 10b may be made of an inorganic material, for example, SiO 2 wait.

[0060] Exemplarily, the outer contour of the transparent adhesive layer 10b is in the shape of a rectangle.

[0061] Exemplarily, the orthographic projection of the transparent adhesive layer 10b on the transparent substrate 10a is located inside the outer contour of the transparent substrate 10a.

[0062] See also Figure 1 and Figure 2 The LED chip further includes a wire layer, which is located on a surface of the light absorbing layer 40 away from the first surface 11, and includes a plurality of conductive lines 50, which penetrate the light absorbing layer 40 and the reflective layer 30 and are connected to the light emitting unit 20. By providing the wire layer, external electrical signals can be introduced from different positions, which is beneficial to reducing the size of the LED chip and improving the integration of the LED chip.

[0063] Optionally, the light-emitting unit 20 includes a light-emitting structure 21 and a connecting electrode layer, the connecting electrode layer is located on a surface of the light-emitting structure 21 away from the first surface 11, and the connecting electrode layer includes a first connecting electrode 22 and a second connecting electrode 23, and the first connecting electrode 22 and the second connecting electrode 23 are respectively connected to semiconductor layers of different conductive types of the light-emitting structure 21. The connecting electrode layer can improve the lateral expansion capability of the current, so that the current can be more evenly expanded laterally to various regions of the light-emitting structure 21, improve the radiation recombination efficiency of carriers, and improve the luminous efficiency of the light-emitting unit 20.

[0064] Figure 3 Schematic diagram of a light emitting unit provided by an embodiment of the present disclosure. Figure 3 As shown, in the light-emitting unit, the light-emitting structure 21 includes a first semiconductor layer 211, a light-emitting layer 212 and a second semiconductor layer 213 stacked in sequence in a direction away from the first surface 11, and the light-emitting structure 21 has a mesa (MESA) 214 extending from the surface of the second semiconductor layer 213 away from the light-emitting layer 212 to the first semiconductor layer 211.

[0065] Optionally, the first semiconductor layer 211 may be an N-type semiconductor layer, and the second semiconductor layer 213 may be a P-type semiconductor layer.

[0066] Optionally, the light emitting structure 21 is a red light emitting structure, a green light emitting structure or a blue light emitting structure. According to the different light emission wavelength ranges of the light emitting structure 21, the materials of each film layer of the light emitting structure 21 can be selected according to actual needs.

[0067] Exemplarily, when the light emitting structure 21 is a red light emitting structure, the first semiconductor layer 211 may be an N-type AlGaInP layer. The light emitting layer 212 may be a multi-quantum well layer, including a plurality of pairs of AlGaInP quantum barrier layers and AlGaInP quantum well layers alternately stacked, wherein the Al component content of the AlGaInP quantum barrier layer is greater than the Al component content of the AlGaInP quantum well layer. The second semiconductor layer 213 may be a P-type AlInP layer.

[0068] Exemplarily, when the light emitting structure 21 is a green light emitting structure, the first semiconductor layer 211 may be an N-type GaN layer. The light emitting layer 212 may be a multi-quantum well layer, including multiple pairs of InGaN layers and GaN layers alternately stacked, for example, the light emitting layer 212 may include 3 to 8 pairs of InGaN layers and GaN layers alternately stacked. The second semiconductor layer 213 may be a P-type GaN layer.

[0069] Exemplarily, when the light emitting structure 21 is a blue light emitting structure, the first semiconductor layer 211 may be an N-type GaN layer. The light emitting layer 212 may be a multi-quantum well layer, including multiple pairs of InGaN layers and GaN layers alternately stacked, for example, the light emitting layer 212 may include 3 to 8 pairs of InGaN layers and GaN layers alternately stacked. The second semiconductor layer 213 may be a P-type GaN layer.

[0070] It should be noted that the film layer structure of the above-mentioned light-emitting structure 21 and the material of the above-mentioned film layer are only used as an example. In other embodiments, the light-emitting structure 21 can also include more or fewer film layer structures, and the material of each film layer can be selected according to actual needs, etc., and the present disclosure does not impose any restrictions on this.

[0071] Exemplarily, the maximum thickness of the light emitting structure 21 is 2 μm to 20 μm. For example, the maximum thickness of the light emitting structure 21 may be greater than or equal to 2 μm and less than 10 μm.

[0072] For example, the area of ​​the orthographic projection of the light emitting structure 21 on the first surface 11 is less than 10000 μm 2 .

[0073] like Figure 3 As shown, the light emitting unit further includes an insulating layer 24 , and the insulating layer 24 is located on a surface of the light emitting structure 21 away from the first surface and on a side wall of the light emitting structure 21 .

[0074] Exemplarily, the first connection electrode 22 and the second connection electrode 23 are located on the surface of the insulating layer 24 away from the first surface 11 , and the first connection electrode 22 penetrates the insulating layer 24 to connect to the first semiconductor layer 211 at the table 214 , and the second connection electrode 23 penetrates the insulating layer 24 to connect to the second semiconductor layer 213 .

[0075] Optionally, the insulating layer 24 is a DBR layer, so that the insulating layer 24 can not only play an insulating role, but also reflect the light emitted from the light emitting structure 21 to the insulating layer 24 back to the light emitting structure 21, thereby improving the light extraction efficiency of the LED chip.

[0076] Exemplarily, the DBR layer includes a plurality of SiO 2 Layers and multiple TiO 2 The number of periods of the DBR layer may be 20 to 50. For example, the DBR layer may include 30 SiO layers that are periodically and alternately stacked. 2 layer and 30 TiO 2 layer.

[0077] In other embodiments, the insulating layer 24 may be SiO 2 Layer, Al 2 O 3At least one of a SiN layer, a SiON layer, or a SiO2 layer.

[0078] like Figure 1 As shown, the orthographic projection of the light emitting unit 20 on the first surface 11 is a rectangle.

[0079] Optionally, the orthographic projection of the connecting electrode layer on the first surface 11 is located inside the orthographic projection of the wire layer on the first surface 11 .

[0080] In the disclosed embodiment, the conductor layer includes four conductive circuits 50 , one conductive circuit 50 is connected to the first connection electrode 22 of each light emitting unit 20 , and the remaining three conductive circuits 50 are respectively connected to the second connection electrodes 23 of the three light emitting units 20 .

[0081] In other embodiments, the wire layer may also include a greater or lesser number of conductive circuits 50 , and the connection method of the conductive circuits 50 may be set according to the number and arrangement of the light-emitting units 20 , which is not limited in the present disclosure.

[0082] Figure 4 yes Figure 1 Schematic diagram of the cross-section structure at the BB line. Figure 1 and Figure 4 , the LED chip further includes a passivation layer 60 and a pad electrode layer, the passivation layer 60 is located on the surface of the wire layer away from the first surface 11, and the passivation layer 60 has a plurality of through holes 61 exposing the wire layer. The pad electrode layer includes a plurality of pad electrodes 70, at least part of which is located in the through holes 61 and connected to the conductive circuit 50. The passivation layer 60 can protect the wire layer and improve the reliability of the LED chip, and the pad electrode layer is used to connect to an external electrical signal, which is conducive to injecting carriers into the light-emitting structure 21 through the pad electrode layer, the wire layer and the connecting electrode layer.

[0083] Optionally, the passivation layer 60 may be SiO 2 Layer, Al 2 O 3 At least one of a SiN layer, a SiON layer, or a SiO2 layer.

[0084] Exemplarily, the passivation layer 60 is also located on the sidewalls of the wire layer, the sidewalls of the light absorption layer 40, the sidewalls of the reflective layer 30 and the sidewalls of the transparent adhesive layer 10b. The orthographic projection of the passivation layer 60 on the transparent substrate 10a completely coincides with the outer contour of the transparent substrate 10a.

[0085] In the disclosed embodiment, the pad electrode layer is located on the surface of the passivation layer 60 away from the first surface 11, the pad electrode 70 is connected to the conductive circuit 50 through the through hole 61, and the orthographic projection of the pad electrode 70 on the first surface 11 overlaps with the orthographic projection of the passivation layer 60 on the first surface 11.

[0086] In other embodiments, the pad electrodes 70 are all located in the through holes 61 and connected to the conductive circuit 50, and the orthographic projection of the pad electrode 70 on the first surface 11 has no overlapping portion with the orthographic projection of the passivation layer 60 on the first surface 11; or, the pad electrode layer is located between the passivation layer 60 and the conductor layer, and the through holes 61 of the passivation layer 60 expose the pad electrode 70, and the orthographic projection of the pad electrode 70 on the first surface 11 has an overlapping portion with the orthographic projection of the passivation layer 60 on the first surface 11.

[0087] Exemplarily, the through hole 61 is a circular through hole.

[0088] like Figure 1 As shown, the orthographic projection of the pad electrode layer on the first surface 11 has no overlap with the orthographic projection of the light-emitting units 20 of various colors on the first surface 11. This can reduce the spacing between the light-emitting units 20, which is beneficial to reducing the pixel spacing and improving the display effect.

[0089] Exemplarily, the orthographic projection of the pad electrode 70 on the first surface 11 is a rectangle.

[0090] In the disclosed embodiment, the pad electrode layer includes four pad electrodes 70 , and the four pad electrodes 70 are located at four corner regions of the outer contour of the transparent carrier layer 10 .

[0091] Exemplarily, the three light-emitting units 20 are arranged at intervals in the row direction on the first surface 11, the pad electrode 70 at the upper left corner is electrically connected to the second connection electrode 23 of the middle light-emitting unit 20 through the conductive circuit 50 at the middle position of the upper side of the three light-emitting units 20, the pad electrode 70 at the upper right corner is electrically connected to the second connection electrode 23 of the rightmost light-emitting unit 20 through the conductive circuit 50 at the right position of the upper side of the three light-emitting units 20, the pad electrode 70 at the lower left corner is electrically connected to the second connection electrode 23 of the leftmost light-emitting unit 20 through the conductive circuit 50 on the left side of the three light-emitting units 20, and the pad electrode 70 at the lower right corner is electrically connected to the first connection electrodes 22 of the three light-emitting units 20 through the conductive circuit 50 on the right side of the three light-emitting units 20.

[0092] Exemplarily, the orthographic projections of each conductive trace 50 on the first surface 11 have no overlapping portions.

[0093] In other embodiments, the pad electrode layer may also include a greater or lesser number of pad electrodes 70 , and the shape, arrangement position and connection method of the pad electrodes 70 may be set according to the number and arrangement of the light-emitting units 20 , which is not limited in the present disclosure.

[0094] Figure 5 FIG. 1 is a flow chart of a method for preparing an LED chip provided by an embodiment of the present disclosure. Figure 5As shown, the preparation method comprises:

[0095] In step S1001 , light-emitting units of multiple colors are formed on a first surface of a transparent supporting layer.

[0096] Light-emitting units of various colors are arranged at intervals.

[0097] In step S1002 , a reflective layer is formed.

[0098] At least a portion of the reflective layer is located on the first surface and between the light-emitting units of multiple colors.

[0099] In step S1003, a light absorbing layer is formed on the reflective layer.

[0100] At least part of the orthographic projection of the light absorbing layer on the first surface is located between the light emitting units of multiple colors.

[0101] The beneficial effects of the embodiments of the present disclosure are the same as those of the structural embodiments and will not be described in detail here.

[0102] Figure 6 FIG. 1 is a flow chart of another method for preparing an LED chip provided by an embodiment of the present disclosure. Figure 6 As shown, the preparation method comprises:

[0103] In step S2001, a transparent carrier layer is provided.

[0104] Illustratively, a transparent adhesive layer may be formed on a transparent substrate to obtain a transparent supporting layer, and a surface of the transparent adhesive layer away from the transparent substrate is the first surface.

[0105] In step S2002 , light-emitting units of multiple colors are formed on the first surface of the transparent supporting layer.

[0106] Illustratively, a red light emitting unit can be formed on a temporary substrate, a green light emitting unit can be formed on a temporary substrate, and a blue light emitting unit can be formed on a temporary substrate, and then the red light emitting unit, the green light emitting unit, and the blue light emitting unit can be transferred to the first surface of the transparent supporting layer, and the light emitting units of multiple colors can be arranged at intervals.

[0107] It should be noted that the structures and materials of the light-emitting units of various colors can be found in Figure 3 Related embodiments: The preparation method of the light-emitting units of various colors can be found in the related art, and the present disclosure will not elaborate on it here.

[0108] In step S2003, a reflective layer is formed.

[0109] Exemplarily, an initial reflective layer may be deposited on the first surface and the surface of the light-emitting unit away from the first surface, a photoresist structure may be obtained on the initial reflective layer through processes such as photoresist coating, exposure, and development, and the initial reflective layer may be etched through an etching process using the photoresist structure as a mask, and the reflective layer may be formed after the photoresist structure is removed. The reflective layer is located on the first surface and between the light-emitting units of multiple colors, and the reflective layer is also located on the surface of the light-emitting unit away from the first surface.

[0110] In step S2004, a light absorbing layer is formed on the reflective layer.

[0111] For example, an initial light absorbing layer may be deposited on the entire surface of the reflective layer, a photoresist structure may be obtained on the initial light absorbing layer through processes such as photoresist coating, exposure, and development, and the initial light absorbing layer may be etched through an etching process using the photoresist structure as a mask, and the light absorbing layer may be formed after the photoresist structure is removed. At least part of the orthographic projection of the light absorbing layer on the first surface is located between the light emitting units of multiple colors, and there is an overlapping part between the orthographic projection of the light absorbing layer on the first surface and the orthographic projection of the light emitting units of multiple colors on the first surface.

[0112] In step S2005 , a wiring layer is formed on the light absorbing layer.

[0113] For example, a photoresist structure can be obtained on the light absorbing layer through processes such as photoresist coating, exposure, and development, and multiple conductive lines are formed by electron beam evaporation and stripping processes using the photoresist structure as a mask to obtain a conductor layer. Multiple conductive lines penetrate the light absorbing layer and the reflective layer and are connected to the light emitting unit.

[0114] In step S2006, a passivation layer is formed on the conductive line layer.

[0115] For example, an initial passivation layer may be deposited on the entire surface of the conductive line layer, a photoresist structure may be obtained on the initial passivation layer through processes such as photoresist coating, exposure, and development, and the initial passivation layer may be etched through an etching process using the photoresist structure as a mask, and the passivation layer may be formed after the photoresist structure is removed. The passivation layer has a plurality of through holes exposing the conductive line layer.

[0116] In step S2007 , a pad electrode layer is formed on the passivation layer.

[0117] For example, a photoresist structure can be obtained on the passivation layer through processes such as photoresist coating, exposure, and development, and the pad electrode layer is formed by an electron beam evaporation process and a stripping process using the photoresist structure as a mask. The pad electrode layer includes a plurality of pad electrodes, and the pad electrodes are connected to the conductive circuit through through holes in the passivation layer.

[0118] Optionally, the structure, shape, material and thickness of the LED chip can be found in Figures 1 to 4 The detailed description of the related structural embodiments is omitted here.

[0119] The embodiment of the present disclosure also provides a light emitting device, comprising a circuit board and a plurality of the aforementioned LED chips, wherein the plurality of LED chips are arranged in an array on the circuit board and the plurality of LED chips are electrically connected to the circuit board.

[0120] Optionally, the circuit board includes a body carrier and a driving trace, wherein the driving trace passes through the body carrier and is located on two opposite surfaces of the body carrier.

[0121] Optionally, the material of the body carrier includes at least one of an organic material and an inorganic material.

[0122] Exemplarily, the material of the main carrier plate may be an inorganic material, for example, the inorganic material may be glass or ceramic.

[0123] Optionally, the light emitting device further includes a driver integrated circuit (IC) chip, and the driver IC chip is used to drive the LED chip to emit light. The LED chip and the driver IC chip are respectively located on two opposite surfaces of the body carrier, and the pad electrode of the LED chip is electrically connected to the pad of the driver IC chip through the driving wiring.

[0124] Optionally, the light emitting device further comprises a packaging adhesive layer, and the packaging adhesive layer covers surfaces of the circuit board, the LED chip and the driver IC chip.

[0125] Exemplarily, the light-emitting device may be a product or component having a light-emitting function, such as a display panel.

[0126] The embodiment of the present disclosure further provides a display device, including a substrate and a plurality of the aforementioned light-emitting devices, wherein the plurality of light-emitting devices are arrayed on the substrate.

[0127] Exemplarily, a plurality of light emitting devices are attached to the substrate.

[0128] Optionally, the display device can be any product or component with a display function, such as a laptop computer, a mobile phone, a tablet computer, a television, a monitor, a wearable device, a digital photo frame, a navigator, etc.

[0129] The above description does not limit the present disclosure in any form. Although the present disclosure has been disclosed as above through the embodiments, it is not used to limit the present disclosure. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes using the technical contents disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure still falls within the scope of the technical solution of the present disclosure.

Claims

1. A light emitting diode chip, characterized in that: It comprises a transparent bearing layer (10), a reflective layer (30), a light absorbing layer (40) and light emitting units (20) of multiple colors. The light-emitting units (20) of multiple colors are arranged at intervals on the first surface (11) of the transparent supporting layer (10); At least a portion of the reflective layer (30) is located on the first surface (11) and between the light-emitting units (20) of multiple colors; The light absorbing layer (40) is located on a surface of the reflective layer (30) away from the first surface (11), and at least part of an orthographic projection of the light absorbing layer (40) on the first surface (11) is located between the light emitting units (20) of the multiple colors.

2. The light emitting diode chip according to claim 1, characterized in that: The reflective layer (30) is also located on a surface of the light-emitting unit (20) that is away from the first surface (11).

3. The light emitting diode chip according to claim 2, characterized in that: A surface of the reflective layer (30) that is away from the first surface (11) is parallel to the first surface (11).

4. The light emitting diode chip according to claim 3, characterized in that: An orthographic projection of the light absorbing layer (40) on the first surface (11) and an orthographic projection of the light emitting units (20) of multiple colors on the first surface (11) have overlapping portions.

5. The light emitting diode chip according to claim 4, characterized in that: The light-emitting diode chip further comprises a wire layer, the wire layer being located on a surface of the light-absorbing layer (40) away from the first surface (11), the wire layer comprising a plurality of conductive lines (50), the plurality of conductive lines (50) penetrating the light-absorbing layer (40) and the reflective layer (30) and connected to the light-emitting unit (20).

6. The light emitting diode chip according to claim 5, characterized in that: The light emitting diode chip further comprises a passivation layer (60) and a pad electrode layer. The passivation layer (60) is located on a surface of the conductive line layer away from the first surface (11), and the passivation layer (60) has a plurality of through holes (61) exposing the conductive line layer; The pad electrode layer comprises a plurality of pad electrodes (70), at least part of the pad electrodes (70) being located in the through hole (61) and connected to the conductive line (50).

7. The light emitting diode chip according to claim 6, characterized in that: The orthographic projection of the pad electrode layer on the first surface (11) has no overlapping portion with the orthographic projection of the light-emitting units (20) of multiple colors on the first surface (11).

8. A method for preparing a light emitting diode chip, characterized in that: include: Forming light-emitting units (20) of multiple colors on a first surface (11) of a transparent carrier layer (10), wherein the light-emitting units (20) of multiple colors are arranged at intervals; forming a reflective layer (30), wherein at least a portion of the reflective layer (30) is located on the first surface (11) and between the light-emitting units (20) of the plurality of colors; A light absorption layer (40) is formed on the reflective layer (30), and at least part of the orthographic projection of the light absorption layer (40) on the first surface (11) is located between the light-emitting units (20) of the multiple colors.

9. A light emitting device, characterized in that: The invention comprises a circuit board and a plurality of light emitting diode chips according to any one of claims 1 to 7, wherein the plurality of light emitting diode chip arrays are arranged on the circuit board.

10. A display device, characterized in that: The device comprises a substrate and a plurality of light emitting devices according to claim 9, wherein the plurality of light emitting device arrays are arranged on the substrate.

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